Stretchable semiconductor device and semiconductor system

Abstract

To provide a stretchable semiconductor device that reduces the impact of stretching on semiconductor elements, enables stabilization of their operation, and enables the reduction of peripheral areas.SOLUTION: It has an upper wiring layer provided on the surface side of a non-stretchable resin substrate facing the stretchable resin substrate 2, and capable of stretching and contracting, a through-hole electrode 11a provided in a state penetrating the stretchable resin substrate 2, and a lower wiring layer 13a provided on the side opposite to the non-stretchable resin substrate of the stretchable resin substrate 2, and capable of stretching and contracting, and the through-hole electrode 11a is electrically connected to the upper wiring layer and is also electrically connected to the lower wiring layer 13a.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a stretchable semiconductor device and a semiconductor system. [Background technology]

[0002] For example, there are semiconductor devices with stretchability (see, for example, Patent Documents 1 and 2 below). Such stretchable semiconductor devices are necessary for driving electronic devices such as organic electroluminescence (EL) displays that can be deformed into three-dimensional shapes such as spherical or free-form surfaces, and pressure-sensitive sensors.

[0003] Specifically, Patent Document 1 below discloses a stretchable semiconductor element comprising a flexible substrate having a support surface and a semiconductor structure having a curved inner surface, at least a portion of the curved inner surface being bonded to the support surface of the flexible substrate.

[0004] Furthermore, Patent Document 2 below discloses a stretchable device in which one or more semiconductor elements are formed on a resin substrate, and a semiconductor-mounted substrate configured by covering the semiconductor elements with an inner sealing layer is embedded in one or more stretchable resin films made of elastomer, a conductive circuit connected to the semiconductor elements is formed in the stretchable resin film, and the periphery of the semiconductor-mounted substrate is covered with an outer sealing layer. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-281406 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-149364 Summary of the Invention [Problem to be solved by the invention]

[0006] In the above-described stretchable semiconductor device, a semiconductor element such as a thin film transistor (TFT) is formed on a stretchable substrate. However, in conventional semiconductor devices, when the substrate is stretched, peeling easily occurs between the substrate (stretchable portion) and the semiconductor element (non-stretchable portion), which can cause instability in the characteristics of the semiconductor element.

[0007] Furthermore, when the substrate is expanded or contracted, it becomes difficult to maintain electrical connection between the wiring on the expanding or contracting substrate side and the electrodes on the semiconductor element side, which may result in disconnection.

[0008] Meanwhile, in multi-displays, multiple display panels are arranged in a plane to display a single screen. A peripheral area called a bezel (frame) is provided on the display panel to surround the periphery of the display area. The peripheral area also has multiple connection parts aligned in the horizontal and vertical directions of the peripheral area, corresponding to multiple scanning lines and multiple signal lines extending outside the display area. The multiple scanning lines and multiple signal lines are electrically connected to an external driving circuit (driver) via a flexible printed circuit board (FPC) connected to the multiple connection parts.

[0009] However, providing a peripheral area outside the display area not only increases the panel size but also increases the panel weight, which is a problem. Also, when multiple display panels are arranged in a single plane to display a single screen as a multi-display, the peripheral area of ​​the display panel can become an obstacle.

[0010] The present invention has been proposed in view of the above-mentioned conventional circumstances, and aims to provide a semiconductor device having elasticity that reduces the impact of expansion and contraction on semiconductor elements, stabilizes the operation of the semiconductor elements, and enables the peripheral area to be reduced, as well as a semiconductor system that uses such a semiconductor device having elasticity. [Means for solving the problem]

[0011] In order to achieve the above object, the present invention provides the following means. [1] A stretchable resin substrate that can be stretched freely; a plurality of non-stretchable resin substrates arranged side by side on the surface of the stretchable resin substrate; a plurality of semiconductor elements arranged on each surface of the plurality of non-elastic resin substrates; a plurality of upper wiring layers provided stretchably between adjacent ones of the plurality of non-stretchable resin substrates on a surface side of the stretchable resin substrate facing the non-stretchable resin substrate; a plurality of through electrodes provided in a state of penetrating the stretchable resin substrate; a plurality of lower wiring layers provided to be stretchable on a surface of the stretchable resin substrate opposite to a surface facing the non-stretchable resin substrate; A stretchable semiconductor device, wherein the plurality of upper wiring layers and the plurality of lower wiring layers are electrically connected via the plurality of through electrodes. [2] A non-stretchable wiring substrate is provided on the surface of the stretchable resin substrate opposite to the surface facing the non-stretchable resin substrate, The stretchable semiconductor device according to [1], wherein the plurality of lower wiring layers are electrically connected to the non-stretchable wiring substrate. [3] A flexible wiring board electrically connected to the non-stretchable wiring board, The stretchable semiconductor device described in [2], characterized in that the connection terminals of the flexible wiring board are joined to the non-stretchable wiring board by thermocompression bonding via an anisotropic conductive film. [4] The stretchable semiconductor device according to [1], wherein the upper wiring layer and the lower wiring layer are formed from a fluid metal material in which metal particles are dispersed in a liquid metal. [5] The stretchable resin substrate has adhesiveness, The stretchable semiconductor device according to [1], wherein the non-stretchable resin substrate is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate. [6] An adhesive layer is provided on the surface of the stretchable resin substrate facing the non-stretchable resin substrate, The stretchable semiconductor device according to [1], wherein the non-stretchable resin substrate is attached to the stretchable resin substrate via the adhesive layer. [7] A plurality of stretchable semiconductor units; a support member that supports the plurality of semiconductor units in a state where the semiconductor units are arranged in a plane, A semiconductor system, wherein the semiconductor unit is the stretchable semiconductor device according to any one of [1] to [6]. [8] The semiconductor system according to [7], wherein the plurality of semiconductor units are supported in a lined-up state within the plane of the support member, with adjacent units butting against each other. [9] The semiconductor system according to [7], wherein the support member has elasticity.

[10] The semiconductor system according to [7], wherein the support member supports the plurality of semiconductor units in a curved state. [Effects of the Invention]

[0012] As described above, according to the present invention, there are provided a semiconductor device having elasticity that reduces the impact of expansion and contraction on a semiconductor element, stabilizes the operation of the semiconductor element, and enables the peripheral region to be reduced in size, as well as a semiconductor system that uses such a semiconductor device having elasticity. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a top view showing a configuration of a semiconductor device system including a semiconductor device according to a first embodiment of the present invention. [Figure 2] 2 is a bottom view showing the configuration of the semiconductor system shown in FIG. [Figure 3] 2 is a top view showing the configuration of the semiconductor device in the enclosed portion A shown in FIG. [Figure 4]4 is a bottom view illustrating the configuration of the semiconductor device illustrated in FIG. 3. FIG. [Figure 5] 4 is an enlarged top view of a main part of the semiconductor device in the boxed portion B shown in FIG. 3. [Figure 6] 6 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line CC shown in FIG. 5. [Figure 7] 6 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line DD shown in FIG. 5. [Figure 8] 4 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line EE shown in FIG. 3. [Figure 9] 4 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line FF shown in FIG. 3. [Figure 10] 5 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line GG shown in FIG. 4. [Figure 11] 6 is an enlarged cross-sectional view of a main part of the semiconductor device corresponding to line CC shown in FIG. 5, illustrating the configuration of the semiconductor device according to the second embodiment of the present invention. [Figure 12] 6 is an enlarged cross-sectional view of a main part of the semiconductor device corresponding to line DD shown in FIG. 5, illustrating the configuration of the semiconductor device according to the second embodiment of the present invention. [Figure 13] 4 is an enlarged cross-sectional view of a main part of the semiconductor device taken along line EE in FIG. 3. [Figure 14] 4 is an enlarged cross-sectional view of a main part of the semiconductor device corresponding to the line FF shown in FIG. 3. [Figure 15] 6 is an enlarged cross-sectional view of a main part of the semiconductor device corresponding to line CC shown in FIG. 5, illustrating the configuration of the semiconductor device according to the third embodiment of the present invention. [Figure 16] 6 is an enlarged cross-sectional view of a main part of the semiconductor device corresponding to line DD shown in FIG. 5, illustrating the configuration of the semiconductor device according to the third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings used in the following description, characteristic portions may be enlarged for convenience in order to make the features easier to understand, and the dimensional ratios of each component may not be the same as in reality. Furthermore, the materials, dimensions, etc. exemplified in the following description are merely examples, and the present invention is not necessarily limited to them, and can be implemented with appropriate changes within the scope of the present invention.

[0015] In the drawings shown below, an XYZ Cartesian coordinate system is set, with the X-axis direction being a first direction X within the plane of the semiconductor device, the Y-axis direction being a second direction Y perpendicular to the first direction X within the plane of the semiconductor device, and the Z-axis direction being a third direction Z perpendicular to the plane of the semiconductor device.

[0016] (First embodiment) (Semiconductor Systems) First, as a first embodiment of the present invention, a configuration of a semiconductor system 100 including a semiconductor device 1A having elasticity as shown in, for example, FIGS. 1 to 10 will be described.

[0017] FIG. 1 is a top view showing the configuration of a semiconductor system 100 including a semiconductor device 1A. FIG. 2 is a bottom view showing the configuration of the semiconductor system 100. FIG. 3 is a top view showing the configuration of the semiconductor device 1A in the enclosed portion A shown in FIG. 1. FIG. 4 is a bottom view showing the configuration of the semiconductor device 1A. FIG. 5 is an enlarged top view of a main portion of the semiconductor device 1A in the enclosed portion B shown in FIG. 3. FIG. 6 is an enlarged cross-sectional view of a main portion of the semiconductor device 1A taken along line CC shown in FIG. 5. FIG. 7 is an enlarged cross-sectional view of a main portion of the semiconductor device 1A taken along line DD shown in FIG. 5. FIG. 8 is an enlarged cross-sectional view of a main portion of the semiconductor device 1A taken along line EE shown in FIG. 3. FIG. 9 is an enlarged cross-sectional view of a main portion of the semiconductor device 1A taken along line FF shown in FIG. 3. FIG. 10 is an enlarged cross-sectional view of a main portion of the semiconductor device 1A taken along line GG shown in FIG. 4.

[0018] As shown in Figures 1 and 2, the semiconductor system 100 of this embodiment is a multi-display that displays a single screen S by arranging multiple display panel units 101 that are rectangular in plan view in a row on a surface.

[0019] Specifically, this semiconductor system 100 includes a plurality of display panel units 101 each including a display area E in which a plurality of pixels P are arranged in a line within a plane, and a support substrate 102 that supports the plurality of display panel units 101 in a lined-up state within a plane.

[0020] In a multi-display, the display areas E of the multiple display panel units 101 form a single screen S by attaching the multiple display panel units 101 to one side (front surface) of a support substrate 102 with adjacent display panel units 101 butted against each other.

[0021] The plurality of display panel units 101 are each made up of a stretchable semiconductor device 1A of this embodiment as a semiconductor unit, while the support substrate 102 is made up of a stretchable support member.

[0022] Therefore, in this multi-display, the plurality of display panel units 101 arranged side by side within the plane of the support substrate 102 can be made to expand and contract together with the support substrate 102.

[0023] Furthermore, each display panel unit 101 has a frameless (bezel-less) structure that omits the peripheral area surrounding the periphery of the display area E. This makes it possible to bring the display areas E of adjacent display panel units 101 closer to each other.

[0024] (Semiconductor Devices) As shown in Figures 3 to 7, the semiconductor device 1A of this embodiment comprises a stretchable resin substrate 2 that can be stretched freely, a plurality of non-stretchable resin substrates 3 arranged in a line within the surface of the stretchable resin substrate 2, and a plurality of semiconductor elements 4 arranged on each surface of the non-stretchable resin substrate 3.

[0025] In the semiconductor device 1A of this embodiment, as an example of the semiconductor element 4, light emitting diode (LED) elements (hereinafter referred to as "LED elements 4" as necessary) are arranged in a matrix in a first direction X and a second direction Y that intersect each other (orthogonal in this embodiment) within the plane of the stretchable resin substrate 2. The LED elements 4 constitute the pixels P of the display panel unit 101 described above.

[0026] The stretchable resin substrate 2 is a film substrate containing an acrylic adhesive composition having adhesive properties, and among these, it is preferable to use an acrylic resin which has excellent transparency, weather resistance, and heat resistance, and has excellent conformability to uneven surfaces and excellent adhesive strength and holding power for curved surfaces.

[0027] For example, the stretchable resin substrate 2 can be made of an adhesive acrylic polymer containing 50% by mass or more of a monomer having an acryloyl group and a methacryloyl group as an adhesive acrylic adhesive composition. The stretchable resin substrate 2 may also be made of a tackifying resin, such as a rosin-based tackifying resin, a terpene-based tackifying resin, or an epoxy-based tackifying resin. The resin material constituting the film substrate of the stretchable resin substrate 2 is a resin with a tensile elongation of 100% or more, such as an acrylic resin, a silicone resin, or a styrene-butadiene resin. The thickness of the stretchable resin substrate 2 is preferably 0.005 to 1.5 mm, and more preferably 0.05 to 1 mm.

[0028] The adhesive strength of the stretchable resin substrate 2 is, for example, preferably 5 N / 20 mm or more, more preferably 7 N / 20 mm or more, in terms of 180° peel adhesive strength measured in accordance with "JIS Z 0237." The level of adhesive strength of the stretchable resin substrate 2 is a necessary element for preventing peeling from and integrating with the non-stretchable resin substrate 3, and there is no particular upper limit to the adhesive strength.

[0029] In order to improve the life span and durability of the stretchable resin substrate 2, it is preferable that the stretchable resin substrate 2 has the ability to return to its original shape after being stretched. Specifically, the recovery rate after being stretched 100% is preferably 70% or more, and more preferably 85% or more. If the recovery rate is low, it becomes difficult to obtain durability. It is known that the recovery rate can be adjusted by the degree of crosslinking and average molecular weight of the acrylic polymer, and adjustment is possible by this method.

[0030] The multiple non-stretchable resin substrates 3 are film substrates made of flexible resin (plastic), and are arranged in a matrix in a first direction X and a second direction Y that intersect each other (orthogonal in this embodiment) within the plane of the stretchable resin substrate 2. Furthermore, each non-stretchable resin substrate 3 can be attached to one surface (front surface) of the stretchable resin substrate 2 by the adhesive force of the stretchable resin substrate 2 described above.

[0031] For example, polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), nanocellulose, etc. can be used for the non-elastic resin substrate 3. Among these, it is preferable to use PI, which has excellent heat resistance and chemical resistance against thermal baking and chemical treatment required when forming semiconductor elements, etc. The thickness of the non-elastic resin substrate 3 is preferably 0.1 to 100 μm, and more preferably 1 to 10 μm.

[0032] Furthermore, the non-stretchable resin substrate 3 is preferably attached to the stretchable resin substrate 2 via an adhesive layer 5. The adhesive layer 5 is a layer for improving adhesion between the stretchable resin substrate 2, which will be the stretchable portion, and the non-stretchable resin substrate 3, which will be the non-stretchable portion, and is formed on the surface of the non-stretchable resin substrate 3 facing the stretchable resin substrate 2.

[0033] The adhesive layer 5 is made of, for example, a silicon oxide (SiO2) film or a silicon nitride (SiN x The adhesive layer 5 preferably has a thickness of 5 to 200 nm, more preferably 10 to 20 nm.

[0034] The LED element 4 is electrically connected to a first upper electrode layer 6 and a second upper electrode layer 7 disposed on one side (front surface) of the non-elastic resin substrate 3. For the first upper electrode layer 6 and the second upper electrode layer 7, for example, metals such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), alloys of these, or conductive films formed by laminating two or more of these metals can be used.

[0035] The first upper electrode layer 6 and the second upper electrode layer 7 are arranged so as to extend in a first direction X and a second direction Y that intersect each other (orthogonal in this embodiment) on the surface of the non-elastic resin substrate 3, and intersect each other three-dimensionally.

[0036] For this reason, an insulating layer 8 is provided at the intersection of the first upper electrode layer 6 and the second upper electrode layer 7 to electrically insulate the first upper electrode layer 6 from the second upper electrode layer 7. The insulating layer 8 may be made of, for example, silicon nitride (SiN x ) film or silicon oxide (SiO2), etc. can be used.

[0037] One end of the LED element 4 is electrically connected to the first upper electrode layer 6 via an electrode portion 6a protruding in the width direction from the first upper electrode layer 6. The other end of the LED element 4 is electrically connected to the second upper electrode layer 7.

[0038] The semiconductor device 1A of this embodiment may be configured such that a protective layer (not shown) covering at least a part of the LED element 4 is provided on the non-elastic resin substrate 3. The protective layer has the effect of suppressing distortion of the LED element 4 formed on the non-elastic resin substrate 3 and stabilizing the characteristics of the LED element 4.

[0039] The protective layer can be made of an organic film such as an epoxy resin, an olefin resin, an acrylic resin, or a polyimide resin. Among these, it is preferable to use a photoreactive epoxy resin, which can be made into a thick film of 1 μm or more and can be patterned by light. Specifically, a negative photoresist material such as SU-8 can be used. The thickness of the protective layer is preferably 0.1 to 5 μm, and more preferably 1 to 2 μm.

[0040] A pair of first upper wiring layers 9a, 9b and a pair of second upper wiring layers 10a, 10b having elasticity are provided on one surface (front surface) of the elastic resin substrate 2. The first upper wiring layers 9a, 9b and the second upper wiring layers 10a, 10b are formed of, for example, a fluid metal material in which metal particles are dispersed in a liquid metal.

[0041] The liquid metal can be, for example, a eutectic alloy containing gallium (Ga) and indium (In), or a eutectic alloy containing Ga, In, and tin (Sn).The melting point can be changed by adjusting the amount of In and Sn added to Ga as the main component.

[0042] Metal particles can be, for example, nickel (Ni), Au, Ag, Cu, or Si. The liquid metals mentioned above have very strong atomic forces, resulting in high surface energy and very poor wettability. Therefore, adding the above-mentioned metal particles can improve wettability.

[0043] For example, by mixing 1 to 20 mass % of Ni particles with an average particle size of 1 to 50 μm into a liquid metal containing gallium (Ga) and indium (In), a paste is formed, which makes it possible to form the first upper wiring layers 9a, 9b and the second upper wiring layers 10a, 10b by printing.

[0044] The pair of first upper wiring layers 9a, 9b are provided extending in the first direction X so as to electrically connect adjacent ones of the plurality of non-stretchable resin substrates 3 in the first direction X. In other words, the pair of first upper wiring layers 9a, 9b are shared between adjacent ones of the plurality of non-stretchable resin substrates 3 in the first direction X.

[0045] On the other hand, the pair of second upper wiring layers 10a, 10b are provided extending in the second direction Y so as to electrically connect adjacent ones of the plurality of non-stretchable resin substrates 3 in the second direction Y. In other words, the pair of second upper wiring layers 10a, 10b are shared between adjacent ones of the plurality of non-stretchable resin substrates 3 in the second direction Y.

[0046] One end side of the pair of first upper wiring layers 9a, 9b is disposed to extend onto the non-stretchable resin substrate 3 and is electrically connected to the first upper electrode layer 6. On the other hand, one end side of the pair of second upper wiring layers 10a, 10b is disposed to extend onto the non-stretchable resin substrate 3 and is electrically connected to the second upper electrode layer 7.

[0047] 3 and 8, of the multiple first upper wiring layers 9a, 9b aligned in the second direction Y, the end of each first upper wiring layer 9a extending from one side in the first direction X toward the side end of the stretchable resin substrate 2 is electrically connected to multiple first through electrodes 11a provided to penetrate the stretchable resin substrate 2. The multiple first through electrodes 11a are provided in a state where they are embedded in multiple first hole portions 12a that penetrate the stretchable resin substrate 2.

[0048] 3 and 9, of the multiple second upper wiring layers 10a, 10b aligned in the first direction X, the end of each second upper wiring layer 10b extending from one side in the second direction Y toward the side end of the stretchable resin substrate 2 is electrically connected to multiple second through electrodes 11b provided to penetrate the stretchable resin substrate 2. The multiple second through electrodes 11b are provided in a state where they are embedded in multiple second hole portions 12b that penetrate the stretchable resin substrate 2.

[0049] The first and second through electrodes 11a, 11b are formed by filling the first and second holes 12a, 12b with a conductive material such as a metal such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), or an alloy thereof. The first and second through electrodes 11a, 11b can also be formed by filling the first and second holes 12a, 12b with the above-mentioned fluid metal material.

[0050] 4 and 8, the plurality of first through electrodes 11a are electrically connected to a plurality of first lower wiring layers 13a arranged on the other surface (rear surface) of the stretchable resin substrate 2. This results in an electrical connection between the first upper wiring layer 9a and the first lower wiring layer 13a via the first through electrodes 11a.

[0051] 4 and 9, the plurality of second through electrodes 11b are electrically connected to the plurality of second lower wiring layers 13b arranged on the other surface (rear surface) of the stretchable resin substrate 2. This results in an electrical connection between the second upper wiring layer 10b and the second lower wiring layer 13b via the second through electrodes 11b.

[0052] The first and second lower wiring layers 13a and 13b are formed from the same fluid metal material as the above-described first and second upper wiring layers 9a, 9b, 10a and 10b.

[0053] The plurality of first lower wiring layers 13a are electrically connected to a first non-stretchable wiring board 14 provided on the other surface (rear surface) of the stretchable resin substrate 2. On the other hand, the plurality of second lower wiring layers 13b are electrically connected to a second non-stretchable wiring board 15 provided on the other surface (rear surface) of the stretchable resin substrate 2.

[0054] The first non-stretchable wiring board 14 and the second non-stretchable wiring board 15 are film substrates made of flexible resin (plastic), and can be attached to one side (front surface) of the stretchable resin substrate 2 due to the adhesive strength of the stretchable resin substrate 2 described above.

[0055] The first and second non-stretchable wiring boards 14, 15 can be made of the same material as the non-stretchable resin substrate 3. The thickness of the first and second non-stretchable wiring boards 14, 15 is preferably 10 to 1000 μm, more preferably 50 to 500 μm, and even more preferably 100 to 200 μm.

[0056] In this embodiment, the first and second non-stretchable wiring boards 14, 15 are arranged in a central portion on the other surface (back surface) of the stretchable resin substrate 2, as shown in Fig. 4. The plurality of first lower wiring layers 13a are arranged extending from connection positions with the respective first through electrodes 11a onto the first non-stretchable wiring board 14, and are electrically connected to the respective wiring layers 14a arranged side by side on the surface of the first non-stretchable wiring board 14. Similarly, the plurality of second lower wiring layers 13b are arranged extending from connection positions with the respective second through electrodes 11b onto the second non-stretchable wiring board 15, and are electrically connected to the respective wiring layers 15a arranged side by side on the surface of the second non-stretchable wiring board 15.

[0057] 4 and 10, a first flexible wiring board (hereinafter referred to as "first FPC") 16a for external connection is electrically connected to the first non-stretchable wiring board 14 via an anisotropic conductive film (hereinafter referred to as "ACF") 17. Similarly, a second flexible wiring board (hereinafter referred to as "second FPC") 16b for external connection is electrically connected to the second non-stretchable wiring board 15 via the ACF 17, as shown in FIG.

[0058] When connecting the first and second FPCs 16a, 16b, the first and second FPCs 16a, 16b are thermocompression bonded while pressing the connection terminals of the first and second non-stretchable wiring boards 14, 15 via the ACF 17. This bonds the first and second FPCs 16a, 16b at the pressure-bonded portions of the ACF 17, and electrically connects the wiring layers 14a, 15a of the first and second non-stretchable wiring boards 14, 15 to the connection terminals of the first and second FPCs 16a, 16b via the ACF 17.

[0059] As shown in Figure 1, the support substrate 102 supports multiple display panel units 101 arranged in a plane by adhering an elastic resin substrate 2 of the semiconductor device 1A that constitutes the above-mentioned multiple display panel units 101 to one surface (front surface).

[0060] The support substrate 102 can be made of the same material as that exemplified for the above-mentioned stretchable resin substrate 2. In addition, the plurality of display panel units 101 can be made of the same material as the above-mentioned adhesion layer 5 and attached to the support substrate 102 via the adhesion layer 5.

[0061] As shown in Figure 2, the support substrate 102 has multiple openings 102a that are rectangular in plan view and face the first non-stretchable wiring board 14 and the second non-stretchable wiring board 15 of each stretchable resin substrate 2.

[0062] The first FPC 16a and the second FPC 16b electrically connected to each display panel unit 101 are pulled out from the connection position with the first non-stretchable wiring board 14 and the second non-stretchable wiring board 15 through the opening 102a in the support substrate 102 to the outside of the outer peripheral edge of the support substrate 102.

[0063] In the semiconductor device 1A of this embodiment having the above-described configuration, the stretchable resin substrate 2 is stretchable between adjacent ones of the plurality of non-stretchable resin substrates 3.

[0064] As a result, when the stretchable resin substrate 2 is stretched in the first direction X and the second direction Y, the LED element 4 is provided on the non-stretchable resin substrate 3, which becomes the non-stretchable portion, and therefore it is possible to reduce the effect of stretching and contracting of the stretchable resin substrate 2 on this LED element 4.

[0065] Therefore, in the semiconductor device 1A of this embodiment, it is possible to reduce the influence of the expansion and contraction of the expandable resin substrate 2 on the LED element 4, and to stabilize the operation of the LED element 4.

[0066] Furthermore, in the semiconductor device 1A of this embodiment, the first and second upper wiring layers 9a, 10b and the first and second lower wiring layers 13a, 13b are electrically connected via the first and second through electrodes 11a, 11b, and first and second FPCs 16a, 16b for external connection are connected to the other surface (rear surface) of the stretchable resin substrate 2. This reduces the peripheral area surrounding the peripheries of the plurality of non-stretchable resin substrates 3, making it possible to realize a frameless (bezel-less) structure for the display panel unit 101.

[0067] Therefore, in the semiconductor system 100 of this embodiment, by using the semiconductor device 1A of this embodiment for the above-mentioned plurality of display panel units 101, it is possible to realize a multi-display with excellent flexibility.

[0068] (Second embodiment) (Semiconductor Devices) Next, as a second embodiment of the present invention, a semiconductor device 1B shown in, for example, FIGS. 11 to 14 will be described.

[0069] 11 is a cross-sectional view showing the configuration of semiconductor device 1B, enlarging a main portion of semiconductor device 1B corresponding to line CC shown in FIG. 5. FIG. 12 is a cross-sectional view showing the configuration of semiconductor device 1B, enlarging a main portion of semiconductor device 1B corresponding to line DD shown in FIG. 5. FIG. 13 is a cross-sectional view showing the main portion of semiconductor device 1B corresponding to line EE shown in FIG. 3. FIG. 14 is a cross-sectional view showing the main portion of semiconductor device 1B corresponding to line FF shown in FIG. 3. In the following description, parts equivalent to those of semiconductor device 1A will not be described and will be denoted by the same reference numerals in the drawings.

[0070] As shown in Figures 11 and 12, the semiconductor device 1B of this embodiment differs from the semiconductor device 1A in the configuration of electrically connecting the first upper electrode layer 6 and the first upper wiring layers 9a, 9b, and the configuration of electrically connecting the second upper electrode layer 7 and the second upper wiring layers 10a, 10b.

[0071] Specifically, both ends of the first upper electrode layer 6 are electrically connected to a pair of third through electrodes 18a, 18b provided to penetrate the non-stretchable resin substrate 3. The pair of third through electrodes 18a, 18b are provided in a state of being embedded in a pair of third hole portions 19a, 19b that penetrate the non-stretchable resin substrate 3.

[0072] In addition, both ends of the second upper electrode layer 7 are electrically connected to a pair of fourth through electrodes 20a, 20b provided to penetrate the non-stretchable resin substrate 3. The pair of fourth through electrodes 20a, 20b are provided in a state of being embedded in a pair of fourth hole portions 21a, 21b that penetrate the non-stretchable resin substrate 3.

[0073] The third through electrodes 18a, 18b and the fourth through electrodes 20a, 20b are formed by filling the third hole portions 19a, 19b and the fourth hole portions 21a, 21b with a conductive material such as a metal such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), or an alloy thereof.

[0074] The pair of third through electrodes 18a, 18b are electrically connected to a pair of first lower electrode layers 22a, 22b arranged on the other surface (back surface) of the non-stretchable resin substrate 3 that faces the stretchable resin substrate 2. In addition, the pair of fourth through electrodes 20a, 20b are electrically connected to a pair of second lower electrode layers 23a, 23b arranged on the surface (lower surface) of the non-stretchable resin substrate 3 that faces the stretchable resin substrate 2.

[0075] The first lower electrode layers 22a, 22b and the second lower electrode layers 23a, 23b may be made of, for example, a metal such as titanium (Ti), chromium (Cr), aluminum (Al), molybdenum (Mo), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, or a conductive film in which two or more of these metals are stacked.

[0076] The pair of first upper wiring layers 9a, 9b are disposed in a state of being embedded in a pair of first upper groove portions 24a, 24b formed in the stretchable resin substrate 2. Specifically, each of the first upper wiring layers 9a, 9b can be formed by filling each of the first upper groove portions 24a, 24b with the above-mentioned fluid metal material using a dispenser or the like.

[0077] The first upper wiring layers 9a, 9b are embedded in the first upper trench portions 24a, 24b, and while having fluidity, can maintain their shape in accordance with the shape of the first upper trench portions 24a, 24b.

[0078] The pair of first upper wiring layers 9a, 9b faces the pair of first lower electrode layers 22a, 22b and is electrically connected to the pair of first lower electrode layers 22a, 22b. That is, the surfaces of the first upper wiring layers 9a, 9b facing the first lower electrode layers 22a, 22b are in contact with the first lower electrode layers 22a, 22b.

[0079] As a result, the pair of first upper wiring layers 9a, 9b are electrically connected to the first upper electrode layer 6 via the pair of first lower electrode layers 22a, 22b and the pair of third through electrodes 18a, 18b.

[0080] The pair of second upper wiring layers 10a, 10b are disposed in a state of being embedded in a pair of second upper groove portions 25a, 25b formed in the stretchable resin substrate 2. Specifically, each of the second upper wiring layers 10a, 10b can be formed by filling each of the second upper groove portions 25a, 25b with the above-mentioned fluid metal material using a dispenser or the like.

[0081] By being embedded in the second upper trench portions 25a, 25b, the second upper wiring layers 10a, 10b can maintain their shape in accordance with the shape of the second upper trench portions 25a, 25b while retaining fluidity.

[0082] The pair of second upper wiring layers 10a, 10b face the pair of second lower electrode layers 23a, 23b and are electrically connected to the pair of second lower electrode layers 23a, 23b. That is, the surfaces of the second upper wiring layers 10a, 10b facing the second lower electrode layers 23a, 23b are in contact with the second lower electrode layers 23a, 23b.

[0083] As a result, the pair of second upper wiring layers 10a, 10b are electrically connected to the second upper electrode layer 7 via the pair of second lower electrode layers 23a, 23b and the pair of fourth through electrodes 20a, 20b.

[0084] 13, the plurality of first lower wiring layers 13a are arranged in a state of being embedded in a plurality of first lower grooves 26a formed on the other surface (back surface) of the stretchable resin substrate 2. Specifically, each of the first lower wiring layers 13a can be formed by filling each of the first lower grooves 26a with the above-mentioned fluid metal material using a dispenser or the like.

[0085] By being embedded in the first lower trench 26a, the first lower wiring layer 13a can maintain its shape in accordance with the shape of the first lower trench 26a while retaining fluidity.

[0086] 14, the plurality of second lower wiring layers 13b are disposed in a state of being embedded in a plurality of second lower grooves 26b formed on the other surface (back surface) of the stretchable resin substrate 2. Specifically, each second lower wiring layer 13b can be formed by filling each second lower groove 26b with the above-mentioned fluid metal material using a dispenser or the like.

[0087] By being embedded in the second lower trench 26b, the second lower wiring layer 13b can maintain its shape in accordance with the shape of the second lower trench 26b while retaining fluidity.

[0088] The semiconductor device 1B of this embodiment has basically the same configuration as the semiconductor device 1A except for the above, and is applied to the display panel unit 101 of the semiconductor system 100.

[0089] In the semiconductor device 1B of this embodiment having the above-described configuration, the stretchable resin substrate 2 is stretchable between adjacent ones of the plurality of non-stretchable resin substrates 3.

[0090] As a result, when the stretchable resin substrate 2 is stretched in the first direction X and the second direction Y, the LED element 4 is provided on the non-stretchable resin substrate 3, which becomes the non-stretchable portion, and therefore it is possible to reduce the effect of stretching of the stretchable resin substrate 2 on the LED element 4.

[0091] Therefore, in the semiconductor device 1B of this embodiment, it is possible to reduce the influence of the expansion and contraction of the stretchable resin substrate 2 on the LED element 4, and to stabilize the operation of the LED element 4.

[0092] Furthermore, in the semiconductor device 1B of this embodiment, similarly to the semiconductor device 1A, the first and second upper wiring layers 9a, 10b and the first and second lower wiring layers 13a, 13b are electrically connected via first and second through electrodes 11a, 11b, and first and second FPCs 16a, 16b for external connection are connected to the other surface (rear surface) of the stretchable resin substrate 2. This reduces the peripheral area surrounding the peripheries of the plurality of non-stretchable resin substrates 3, making it possible to realize a frameless (bezel-less) structure for the display panel unit 101.

[0093] Therefore, in the semiconductor system 100 of this embodiment, by using the semiconductor device 1B of this embodiment for the above-mentioned plurality of display panel units 101, it is possible to realize a multi-display with excellent flexibility.

[0094] (Third embodiment) (Semiconductor Devices) Next, a semiconductor device 1C shown in, for example, FIGS. 15 and 16 will be described as a third embodiment of the present invention.

[0095] Note that Fig. 15 shows the configuration of semiconductor device 1C and is an enlarged cross-sectional view of a main part of semiconductor device 1C corresponding to line CC shown in Fig. 5. Fig. 16 shows the configuration of semiconductor device 1C and is an enlarged cross-sectional view of a main part of semiconductor device 1C corresponding to line DD shown in Fig. 5. In the following description, explanations of parts equivalent to those of semiconductor devices 1A and 1B will be omitted and the same reference numerals will be used in the drawings.

[0096] As shown in Figures 15 and 16, the semiconductor device 1C of this embodiment has a configuration in which the first lower electrode layers 22a, 22b and the second lower electrode layers 23a, 23b are omitted from the configuration of the semiconductor device 1B.

[0097] In the semiconductor device 1C of this embodiment, the pair of first upper wiring layers 9a, 9b face the pair of third through-hole electrodes 18a, 18b and are electrically connected to the pair of third through-hole electrodes 18a, 18b. That is, the surfaces of the first upper wiring layers 9a, 9b facing the third through-hole electrodes 18a, 18b are in contact with the third through-hole electrodes 18a, 18b.

[0098] As a result, the pair of first upper wiring layers 9a, 9b are electrically connected to the first upper electrode layer 6 via the pair of third through electrodes 18a, 18b.

[0099] On the other hand, the pair of second upper wiring layers 10a, 10b are electrically connected to the pair of fourth through electrodes 20a, 20b while facing the pair of fourth through electrodes 20a, 20b. That is, the surfaces of the second upper wiring layers 10a, 10b facing the fourth through electrodes 20a, 20b are in contact with the fourth through electrodes 20a, 20b.

[0100] As a result, the pair of second upper wiring layers 10a, 10b are electrically connected to the second upper electrode layer 7 via the pair of fourth through electrodes 20a, 20b.

[0101] Furthermore, the semiconductor device 1C of this embodiment is configured such that the adhesive layer 5 is omitted from the configuration of the semiconductor device 1A, and multiple non-stretchable resin substrates 3 are attached to the stretchable resin substrate 2 by the adhesive force of the stretchable resin substrate 2 having the adhesive properties described above.

[0102] The semiconductor device 1C of this embodiment has basically the same configuration as the semiconductor devices 1A and 1B, except for the above, and is applied to the display panel unit 101 of the semiconductor system 100.

[0103] In the semiconductor device 1C of this embodiment having the above-described configuration, the stretchable resin substrate 2 is stretchable between adjacent ones of the plurality of non-stretchable resin substrates 3.

[0104] As a result, when the stretchable resin substrate 2 is stretched in the first direction X and the second direction Y, the LED element 4 is provided on the non-stretchable resin substrate 3, which becomes the non-stretchable portion, and therefore it is possible to reduce the effect of stretching and contracting of the stretchable resin substrate 2 on this LED element 4.

[0105] Therefore, in the semiconductor device 1C of this embodiment, it is possible to reduce the influence of the expansion and contraction of the expandable resin substrate 2 on the LED element 4, and to stabilize the operation of the LED element 4.

[0106] Furthermore, in the semiconductor device 1C of this embodiment, similarly to the semiconductor device 1A, the first and second upper wiring layers 9a, 10b and the first and second lower wiring layers 13a, 13b are electrically connected via first and second through electrodes 11a, 11b, and first and second FPCs 16a, 16b for external connection are connected to the other surface (rear surface) of the stretchable resin substrate 2. This reduces the peripheral area surrounding the peripheries of the plurality of non-stretchable resin substrates 3, making it possible to realize a frameless (bezel-less) structure for the display panel unit 101.

[0107] Therefore, in the semiconductor system 100 of this embodiment, by using the semiconductor device 1C of this embodiment for the above-mentioned plurality of display panel units 101, it is possible to realize a multi-display with excellent flexibility.

[0108] The present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

[0109] The first and second upper wiring layers 9a, 9b, 10a, 10b and the first and second lower wiring layers 13a, 13b may be configured to be arranged in a state where they are covered by a stretchable layer arranged on the stretchable resin substrate 2. The stretchable layer can be made of a stretchable resin material such as rubber or elastomer that is the same as or different from the stretchable resin substrate 2, and can be arranged on the stretchable resin substrate 2 so as to cover the first and second upper wiring layers 9a, 9b, 10a, 10b and the first and second lower wiring layers 13a, 13b.

[0110] Furthermore, the semiconductor devices 1A, 1B, and 1C may be configured such that a stretchable resin layer is disposed to entirely cover one surface of the stretchable resin substrate 2 facing each of the non-stretchable resin substrates 3. The stretchable resin layer may be formed by bonding a stretchable resin substrate made of a stretchable resin material such as rubber or elastomer that is the same as or different from the stretchable resin substrate 2, or by laminating the stretchable resin layer on the stretchable resin substrate 2. In this case, the first and second upper wiring layers 9a, 9b, 10a, and 10b are disposed in a state where they are embedded in the stretchable resin layer.

[0111] Furthermore, the stretchable resin substrate 2 is not necessarily limited to the one having the above-mentioned adhesiveness, and may be one without adhesiveness. In this case, the non-stretchable resin substrate 3 may be attached to the stretchable resin substrate 2 via the adhesive layer 5.

[0112] Furthermore, the first and second upper wiring layers 9a, 9b, 10a, 10b and the first and second lower wiring layers 13a, 13b may be configured not only to be arranged in a state where they are embedded in the first and second upper groove portions 24a, 24b, 25a, 25b and the first and second lower groove portions 26a, 26b formed in the stretchable resin substrate 2 described above, but also to be arranged in a state where they are embedded in an insulating layer (not shown) formed on the stretchable resin substrate 2.

[0113] The first and second upper wiring layers 9a, 9b, 10a, 10b, the third and fourth through electrodes 18a, 18b, 20a, 20b, and the first and second lower wiring layers 13a, 13b are not limited to the configuration using the fluid metal material described above, and may be made of, for example, a conductive elastic material obtained by dispersing a conductive filler in an elastic elastomer to provide conductivity. Furthermore, the first and second upper wiring layers 9a, 9b, 10a, 10b and the first and second lower wiring layers 13a, 13b may be made of a stretchable conductive layer, such as a metal wiring made of gold or the like that is bent in an accordion-like shape.

[0114] As the elastomer, for example, silicone rubber, fluororubber, styrene-butadiene rubber, butadiene rubber (BR), butyl rubber, ethylene-propylene copolymer, nitrile rubber (NBR), chloroprene rubber (CR), chlorosulfonated polyethylene, urethane rubber, acrylic rubber, epichlorohydrin rubber, etc. can be used to impart flexibility.

[0115] Examples of conductive fillers that can be used include carbon nanotubes, metal nanowires, metal nanoparticles, metal nanoflakes, etc. In order to prevent loss of conductivity during expansion and contraction, it is preferable to use wire- or flake-shaped fillers, which can form a network structure during expansion and maintain a conductive path.

[0116] Although the semiconductor system 100 of this embodiment illustrates an example in which a stretchable support substrate 102 is used as a support member, a configuration using a support member that supports the plurality of display panel units 101 in a curved state may also be used. Because the plurality of display panel units 101 are stretchable, the plurality of display panel units 101 can be aligned and attached along the curved surface of the support member, thereby realizing a curved multi-display.

[0117] Furthermore, the semiconductor devices 1A, 1B, and 1C of this embodiment are configured to include LED elements 4 as the semiconductor elements described above, but by forming TFTs or the like on each non-stretchable resin substrate 3 and each non-stretchable resin substrate 3 constituting one pixel device, it is possible to realize a stretchable display that can be stretched and contracted, and to form a display that can be deformed into a three-dimensional shape such as a spherical surface or a free-form surface. When configuring a pixel device, it is also possible to use light-emitting elements such as organic electroluminescence (EL) elements instead of the LED elements 4 described above.

[0118] Furthermore, the semiconductor device to which the present invention is applied is not necessarily limited to a configuration having the above-mentioned light-emitting element, and it is also possible to use an electronic device having semiconductor elements such as a light-receiving element, a strain sensor, or a pressure sensor. [Explanation of symbols]

[0119] DESCRIPTION OF SYMBOLS 1A, 1B, 1C... Semiconductor device 2... Stretchable resin substrate 3... Non-stretchable resin substrate 4... Semiconductor element (LED element) 5... Adhesion layer 6... First upper electrode layer 7... Second upper electrode layer 8... Insulating layer 9a, 9b... First upper wiring layer 10a, 10b... Second upper wiring layer 11a... First through electrode 11b... Second through electrode 12a... First hole 12b... Second hole 13a... First lower wiring layer 13b... Second lower wiring layer 14... First non-stretchable wiring board 15... Second non-stretchable wiring board 16a... First flexible wiring board (FPC) 16b... Second flexible wiring board (FPC) 17... Anisotropic conductive film (ACF) 18a, 18b... Third through electrode 19a, 19b...Third hole portion 20a, 20b...Fourth through electrode 21a, 21b...Fourth hole portion 22a, 22b...First lower electrode layer 23a, 23b...Second lower electrode layer 24a, 24b...First upper groove portion 25a, 25b...Second upper groove portion 26a...First lower groove portion 26b...Second lower groove portion 100...Semiconductor system (multi-display) 101...Display panel unit (semiconductor device) 102...Support substrate (support member)

Claims

1. A stretchable resin substrate that can be stretched freely; a plurality of non-stretchable resin substrates arranged side by side on the surface of the stretchable resin substrate; a plurality of semiconductor elements arranged on each surface of the plurality of non-elastic resin substrates; a plurality of upper wiring layers provided stretchably between adjacent ones of the plurality of non-stretchable resin substrates on a surface side of the stretchable resin substrate facing the non-stretchable resin substrate; a plurality of through electrodes provided in a state of penetrating the stretchable resin substrate; a plurality of lower wiring layers provided to be stretchable on a surface of the stretchable resin substrate opposite to a surface facing the non-stretchable resin substrate; A stretchable semiconductor device, wherein the plurality of upper wiring layers and the plurality of lower wiring layers are electrically connected via the plurality of through electrodes.

2. a non-stretchable wiring substrate provided on the surface of the stretchable resin substrate opposite to the surface facing the non-stretchable resin substrate; The stretchable semiconductor device according to claim 1 , wherein the plurality of lower wiring layers are electrically connected to the non-stretchable wiring substrate.

3. a flexible wiring board electrically connected to the non-stretchable wiring board; 3. The stretchable semiconductor device according to claim 2, wherein connection terminals of the flexible wiring board are bonded to the non-stretchable wiring board via an anisotropic conductive film by thermocompression bonding.

4. 2. The stretchable semiconductor device according to claim 1, wherein the upper wiring layer and the lower wiring layer are formed from a fluid metal material in which metal particles are dispersed in a liquid metal.

5. The stretchable resin substrate has adhesiveness, 2. The stretchable semiconductor device according to claim 1, wherein the non-stretchable resin substrate is attached to the stretchable resin substrate by the adhesive force of the stretchable resin substrate.

6. an adhesive layer provided on a surface of the stretchable resin substrate facing the non-stretchable resin substrate; 2. The stretchable semiconductor device according to claim 1, wherein the non-stretchable resin substrate is attached to the stretchable resin substrate via the adhesive layer.

7. a plurality of stretchable semiconductor units; a support member that supports the plurality of semiconductor units in a state where the semiconductor units are arranged in a plane, A semiconductor system, wherein the semiconductor unit is the stretchable semiconductor device according to any one of claims 1 to 6.

8. 8. The semiconductor system according to claim 7, wherein the plurality of semiconductor units are supported in a lined-up state within a plane of the support member with adjacent semiconductor units butting against each other.

9. The semiconductor system according to claim 7 , wherein the support member has elasticity.

10. 8. The semiconductor system according to claim 7, wherein the support member supports the plurality of semiconductor units in a curved state.

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