Semiconductor device and manufacturing method for the same

Abstract

To provide an electronic device and a manufacturing method for the same, capable of forming a wettable flank without exposing Cu.SOLUTION: An electronic device 10 includes a plurality of leads 102 containing conductive material. One lead among the plurality of leads 102 includes a base portion 1021 and a protrusion 1022 extending from the underside of the base portion 1021. A die paddle 101 may be positioned between the plurality of leads 102 and includes conductive material. A lower mold die 103 may be positioned over the periphery of a first side surface of the protrusion 1022 and a side surface of the die paddle 101. A bottom surface finishing portion 105 may be applied to the bottom surface of the protrusion 1022.SELECTED DRAWING: Figure 1A

Description

[Technical Field]

[0001] The present invention relates generally to electronic devices, and more particularly to semiconductor devices and methods for fabricating semiconductor devices. [Background technology]

[0002] Conventional semiconductor packages and methods of forming semiconductor packages are inadequate and result in, for example, excessive cost, reduced reliability, relatively low performance, or excessive package size. Further limitations and drawbacks of conventional traditional approaches will become apparent to those skilled in the art by comparing such approaches with this disclosure and by reference to the drawings. [Brief explanation of the drawings]

[0003] [Figure 1A] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 1B] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 1C] 1 illustrates a top perspective view of an exemplary electronic device. [Figure 1D] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 2A] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2B] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2C] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2D] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2E] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2F] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2G] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2H]1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2I] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2J] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2K] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 2L] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 3A] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 3B] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 3C] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 4A] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 4B] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 4C] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 4D] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 4E] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 4F] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 4G] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 4H] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 5A] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 5B] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 6A] 1 illustrates a top perspective view of an exemplary electronic device. [Figure 6B] 6B shows a cross-sectional view of the exemplary electronic device taken along line AA' of FIG. 6A. [Figure 6C] 6B shows a cross-sectional view of the exemplary electronic device taken along line BB' of FIG. 6A. [Figure 7A] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 7B] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 7C] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 7D] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 7E] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 7F] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 7G] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 7H] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 8] 1 illustrates a cross-sectional view of an exemplary electronic device. [Figure 9A] 1 illustrates a top perspective view of an exemplary electronic device. [Figure 9B] 9B shows a cross-sectional view of an exemplary electronic device taken along line AA' of FIG. 9A. [Figure 9C] 9B shows a cross-sectional view of the exemplary electronic device taken along line BB' of FIG. 9A. [Figure 9D] 9B shows a cross-sectional view of the exemplary electronic device taken along line CC' of FIG. 9A. [Figure 10A] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10B] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10C] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10D] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10E]1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10F] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10G] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10H] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 10I] 1A-1D illustrate cross-sectional views of an exemplary method for manufacturing an exemplary electronic device. [Figure 11A] 1 illustrates a top perspective view of an exemplary electronic device. [Figure 11B] 11B shows a cross-sectional view of the exemplary electronic device taken along line AA' of FIG. 11A. [Figure 11C] 11B shows a cross-sectional view of the exemplary electronic device taken along line BB' of FIG. 11A. [Figure 12A] 1 illustrates a top perspective view of an exemplary electronic device. [Figure 12B] 12B shows a cross-sectional view of the exemplary electronic device taken along line AA' of FIG. 12A.

[0004] The following discussion provides various examples of semiconductor devices and methods of fabricating semiconductor devices. Such examples are non-limiting, and the scope of the appended claims should not be limited to the particular examples disclosed. In the following discussion, the term "example" is non-limiting.

[0005] The drawings illustrate general construction methods, and descriptions and details of well-known features and techniques may be omitted to avoid unnecessarily obscuring the present disclosure. Additionally, elements in the drawings are not necessarily drawn to scale. For example, the dimensions of some of the elements in the drawings may be exaggerated relative to other elements to help improve understanding of the examples described in the present disclosure. The same reference numbers in different drawings refer to the same elements.

[0006] The word "or" means any one or more of the items in the list joined by "or." For example, "x or y" means any element of the 3-element set {(x), (y), (x, y)}. As another example, "x, y, or z" means any element of the 7-element set {(x), (y), (z), (x, y), (x, z), (y, z), (x, y, z)}.

[0007] The term "comprising" is an "open-ended" term that specifies the presence of stated features but does not exclude the presence or addition of one or more other features.

[0008] Terms such as "first," "second," and the like may be used herein to describe various elements. Elements described using "first," "second," and the like should not be limited by these terms. Terms such as "first," "second," and the like are used only to distinguish one element from another. Thus, for example, a first element described in this disclosure could be referred to as a second element without departing from the teachings of the disclosure.

[0009] Unless otherwise specified, the term "coupled" may be used to describe two elements that are in direct contact with each other or two elements that are indirectly coupled through one or more other elements. For example, if element A is coupled to element B, element A may either be in direct contact with element B or indirectly coupled to element B through an intervening element C. Similarly, the term "on" may be used to describe two elements that are in direct contact with each other or two elements that are indirectly coupled through one or more other elements. As used herein, the term coupled can refer to an electrical coupling or a mechanical coupling. DETAILED DESCRIPTION OF THE INVENTION

[0010] An exemplary electronic device may include a plurality of leads including a conductive material. One of the plurality of leads may include a base portion and a protrusion extending from a bottom surface of the base portion. A die paddle may be disposed between the plurality of leads and may include a conductive material. A bottom mold may be disposed over a first side of the protrusion and around a side surface of the die paddle. A bottom surface finish may be applied to a bottom surface of the protrusion. An electronic component may be coupled to the die paddle and in electronic communication with the one of the leads.

[0011] An exemplary method for manufacturing an electronic device may include providing a plurality of leads including a conductive material. One of the plurality of leads may include a base portion and a protrusion extending from a lower surface of the base portion. A die paddle including the conductive material may be provided, the die paddle being disposed between the plurality of leads. The method may further include providing a bottom mold over a periphery of a first side of the protrusion and a side of the die paddle, providing a bottom surface finish on a lower surface of the protrusion, and providing an electronic component coupled to the die paddle and in electronic communication with the one lead.

[0012] Another exemplary electronic device may include leads including a conductive material. The leads may include a base portion and a protrusion extending from a lower surface of the base portion. A die paddle may be disposed adjacent to the leads and may include the conductive material. A lower mold may be provided over a first side of the protrusion and a periphery of a side of the die paddle. The lower mold may be located between the leads and the die paddle. A surface finish may be applied to a lower surface of the protrusion to form a wettable flank. An electronic component may be coupled to the die paddle and in electronic communication with the leads.

[0013] Other examples are also included in this disclosure and may be found in the drawings, claims, or description of this disclosure.

[0014] The electronic devices of the present disclosure may include routable microlead frames (rtMLFs) fabricated using a multi-stage molding and patterning process. The resulting electronic devices may include wettable surfaces or wettable flanks, which tend to improve soldering performance. As used herein, the term "wettable flank" may refer to a conductive structure having an L-shape or a stepped shape for lateral bonding of flowable materials. The leads may be patterned from a metal material and molded together using multiple applications of a formable material and a surface treatment on the formable material. The electronic devices of the present disclosure tend to have fewer metal burrs and be more reliable. The electronic devices of the present disclosure may also include wettable flanks while reducing lateral exposure of copper or other interconnect materials. Electromagnetic interference (EMI) shielding may be integrated using conductive paste, vertical wire, wire fence, wire cage, or other EMI shielding techniques.

[0015] 1A and 1B show cross-sectional views of an exemplary electronic device 10, and FIG. 1C shows a top perspective view of the exemplary electronic device 10. FIG. 1A is taken along line A-A' in FIG. 1C, and FIG. 1B is taken along line B-B' in FIG. 1C. In the example shown in FIGS. 1A, 1B, and 1C, the electronic device 10 can include a substrate 100, an electronic component 110, an encapsulant 120, and a shield 130.

[0016] The substrate 100 may include a die paddle 101, leads 102, a lower mold 103, and an upper mold 104. The leads 102 may include a base portion 1021, a protrusion 1022, and a wettable flank 1023. The base portion 1021 and the protrusion 1022 may form or define the wettable flank 1023 of the leads 102. The substrate 100 may also include one or more ground leads 1024. In some examples, the ground leads 1024 may extend diagonally from a corner of the die paddle 101. The ground leads 1024 may be integrally formed with the die paddle 101 and disposed on the lower mold 103. The base portion 1021 of each lead 102 can include a base upper surface 1021 a, a base lower surface 1021 b, and a base side surface 1021 c. The protrusion 1022 can include a protrusion lower surface 1022 a and a protrusion side surface 1022 b. In FIG. 1C, the "cross-hatching" shown on the leads 102 and ground lead 1024 identifies regions of the leads having a reduced thickness or half thickness compared to the thickness of other regions of the lead 102 or die paddle 101.

[0017] In some examples, a lower surface finish 105 can be disposed along the bottom surfaces of the die paddle 101 and leads 102 (e.g., along the wettable flank 1023 and the protrusion lower surface 1022a). An upper surface finish 106 can be disposed along the top surfaces of the die paddle 101 and leads 102 (e.g., along the base upper surface 1021a and the ground lead 1024). The electronic component 110 can include component interconnects 111. The component interconnects 111 can electrically couple the electronic component to the substrate 100. An adhesive material 112 can couple the electronic component 110 to the die paddle 101.

[0018] The substrate 100, the encapsulant 120, and the shield 130 may be referred to as a semiconductor package. The package may protect the electronic component 110 from external elements and / or exposure. The package may also provide an electrical connection between the external electronic component and the electronic component 110.

[0019] 1D shows a cross-sectional view of an exemplary electronic device 10'. In the example shown in FIG. 1D, the electronic device 10' is similar to the electronic device 10 shown in FIG. 1A except that the shield 130 is omitted. In the electronic device 10', the side surfaces of the upper mold die 104 and the top and side surfaces of the encapsulant 120 are exposed.

[0020] 2A-2L illustrate cross-sectional views of an exemplary method for fabricating an exemplary electronic device 10 or 10′. In some examples, the method is illustrated graphically. FIGS. 2A-2L can be referred to as a “wettable flank first” or “die last” process.

[0021] FIG. 2A illustrates a cross-sectional view of an electronic device 10 or 10' at an early stage of fabrication. In the embodiment illustrated in FIG. 2A, a feedstock 100' for a substrate 100 is provided. The feedstock 100' can include a substantially flat top surface and a substantially flat bottom surface opposite the top surface. The feedstock 100' can be or include a conductor or conductive thin plate. In some examples, the feedstock 100' can include a conductive material with a thermal expansion coefficient similar to that of silicon and excellent thermal or electrical conductivity. In some examples, the feedstock 100' can include Cu, Cu-Fe-P, Cu-Ni-Si, or Ni-Fe (e.g., Alloy 42, which includes approximately 42% Ni and the remainder Fe). The feedstock 100' can generally be provided as thick-rolled or cold-rolled metal. The thickness of the feedstock 100' can range from approximately 125 μm (micrometers) to approximately 250 μm. As described below, the feedstock 100' may provide the die paddle 101, leads 102, and ground lead 1024 of the substrate 100.

[0022] FIG. 2B shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2B, a recess or groove 107 is provided in the lower surface (or first side) of raw material 100′. In some examples, recess 107 can be formed by etching raw material 100′. For example, a photoresist can be applied or laminated to the lower surface of raw material 100′, and then a portion of the lower surface of raw material 100′ (e.g., the portion of raw material 100′ to be etched and removed) can be treated by an exposure and development process. By supplying an etchant to the exposed lower surface of raw material 100′, a region of the lower surface of raw material 100′ can be removed, forming recess 107 in the lower surface of raw material 100′. In some examples, the depth of recess 107 can be about 50% to about 70% of the total thickness of raw material 100′. As used herein with respect to linear distance, the term "about" can mean + / - 5%, + / - 10%, + / - 15%, + / - 20%, or + / - 25%. After the underside etching process is complete, the remaining photoresist can be removed.

[0023] FIG. 2C shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2C, lower mold mold 103 is disposed in recess 107 (FIG. 2B). Lower mold mold 103 can fill recess 107 in feedstock 100′. In some examples, as described below, lower mold mold 103 can physically or chemically protect feedstock 100′ (e.g., die paddle 101, leads 102, and ground lead 1024) and / or provide electrical insulation between die paddle 101, leads 102, and ground lead 1024. Lower mold mold 103 can include a material that has excellent adhesion to feedstock 100′. Lower mold mold 103 can include a material that has excellent heat dissipation properties to dissipate heat from feedstock 100′. Lower mold mold 103 has excellent formability into a desired shape. In some examples, the lower mold 103 can be made of or include a resin, a polymer with a filler, an epoxy molding compound, an encapsulant, or a protective material. In some examples, the lower mold 103 can be provided by a transfer molding method using a mold material provided in tablet form, a compression molding method using a mold material (e.g., a resin) provided in powder (granular) form, a liquid molding method using a mold material provided in liquid form, or a vacuum lamination method using a mold material provided in film form. In some examples, after the lower mold 103 is provided, a grinding process can be performed to flatten the lower surface of the lower mold 103 and the raw material 101′. Depending on the grinding process, the lower surface of the raw material 100′ and the lower surface of the lower mold 103 can be coplanar (e.g., substantially coplanar).

[0024] FIG. 2D shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2D, a recess or groove 108 is provided in the top surface (or second side) of raw material 100′. In some examples, the recess 108 can be formed by etching raw material 100′. For example, a photoresist can be applied or laminated to the top surface of raw material 100′, and then a portion of the top surface of raw material 100′ (e.g., the portion of raw material 100′ to be etched and removed) can be treated with an exposure and development process. By selectively supplying an etchant to the exposed top surface of raw material 100′, a region of the top surface of raw material 100′ can be removed, and the recess 108 can be formed in the top surface of raw material 100′.

[0025] According to various examples, the recess 108 can be located in an area corresponding to, vertically overlapping, or within the footprint of the recess 107 ( FIG. 2B ) and the lower mold mold 103 on the underside of the raw material 100′. In some examples, the recess 108 can be located in an area that does not vertically overlap, or an area outside the footprint of the recess 107 and the lower mold mold 103. In some examples, the depth of the recess 108 can be about 30% to about 50% of the total thickness of the raw material 100′. In areas where the recess 108 vertically overlaps the recess 107 and the lower mold mold 103, the combination of the recess 107 and the recess 108 can extend completely through the raw material 100′. Some areas of the lower mold mold 103 can be exposed through the top surface of the raw material 100′ by the recess 108. After the top surface etching process is complete, the remaining photoresist can be removed.

[0026] FIG. 2E shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2E, top mold mold 104 is provided in recess 108 (FIG. 2D). Top mold mold 104 can fill recess 108 in the top surface of feedstock 100′. In some examples, top mold mold 104 can be bonded to or in contact with bottom mold mold 103. In some examples, the materials and methods for providing top mold mold 104 are the same as or similar to the materials and methods for providing bottom mold mold 103 described above. In some examples, after providing top mold mold 104, a grinding process can be used to flatten the top surfaces of top mold mold 104 and feedstock 100′. Depending on the grinding process, the top surfaces of feedstock 100′ and top mold mold 104 can be flush with each other.

[0027] FIG. 2F illustrates a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2F, a wettable flank 1023 is provided on the underside of source material 100′. In some examples, an etching process can be used to provide the wettable flank 1023 (e.g., a portion of source material 100′ can be etched away). For example, photoresist can be applied or laminated to the underside of source material 100′ and lower mold mold 103, exposing a portion of the underside of source material 100′ (i.e., the area to be etched away). By providing an etchant to the exposed underside of source material 100′, a portion of source material 100′ can be removed to provide the wettable flank 1023. In some examples, a portion of the lower mold mold 103 can also be removed during the etching process used to form the wettable flank 1023. After etching, the remaining photoresist can be removed. In some examples, the depth of the wettable flank 1023 can be about 50% to about 70% of the total thickness of source material 100′. In some instances, after wettable flank 1023 is formed, top mold 104 may be exposed from the underside of feedstock 100'.

[0028] According to various embodiments, a substrate 100 including a die paddle 101, leads 102, ground leads 1024 (FIGS. 1B and 1C), a bottom mold 103, and a top mold can be provided by the methods described above. The die paddle 101, leads 102, and ground leads 1024 of the substrate 100 can be provided by a feedstock 100'. In some examples, the substrate 100 can be or comprise a leadframe, a routable leadframe, a routable molded leadframe, a molded leadframe, or a molded substrate. In some examples, to improve manufacturing efficiency, the substrate 100 can be provided in a matrix or strip with multiple rows and columns of substrates 100. In some examples, the substrate 100 can be provided in the form of a disk or square panel, with multiple substrates 100 arranged within the disk or square panel.

[0029] As described above, each of the leads 102 may include a base portion 1021 (or upper surface) and a protrusion 1022 (or lower surface) extending downward from the base portion 1021. The base portion 1021 may include a substantially flat upper base surface 1021a, a substantially flat lower base surface 1021b opposite the upper base surface 1021a, and a base side surface 1021c extending between the upper base surface 1021a and the lower base surface 1021b. The thickness of the base portion 1021 measured between the upper base surface 1021a and the lower base surface 1021b may range from about 50 μm to about 100 μm. The protrusion 1022 may include a substantially flat lower protrusion surface 1022a and a substantially flat lower protrusion surface 1022b extending between the lower protrusion surface 1022a and the lower base surface 1021b. In some examples, the width of the protrusion 1022 measured along the protrusion lower surface 1022a can be smaller than the width of the base portion 1021 measured along the base upper surface 1021a. For example, the thickness of the protrusion 1022 measured between the protrusion lower surface 1022a and the base lower surface 1021b can be between about 25 μm and about 250 μm, about 35 μm and about 125 μm, about 75 μm and about 200 μm, about 125 μm and about 150 μm, or any other suitable length range. The wettable flank 1023 may comprise or be defined by the base lower surface 1021b and the protrusion side surface 1022b and may be exposed through the lower mold mold 103 and the upper mold mold 104. The wettable flank 1023 can provide excellent solder adhesion by increasing the surface area of ​​the lead 102 exposed from the lower mold mold 103 or the upper mold mold 104. Additionally, forming wettable flank 1023 using an etching process rather than a mechanical process (e.g., stamping or cutting) can reduce or prevent the formation of metal burrs at the edges of feedstock 101′. Preventing or reducing burrs tends to improve electrical performance and / or reliability by reducing or preventing the formation of physical bridges (i.e., shorts) between leads that may be caused by burrs and / or environmentally induced Cu migration.

[0030] FIG. 2G shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2G, a surface finish can be applied. A bottom finish 105 can be provided on the bottom surfaces of die paddle 101 and leads 102. A top finish 106 can be provided on the top surfaces of die paddle 101, leads 102, and ground lead 1024 (FIG. 2B). In some examples, top finish 106 can be provided on top base surface 1021a. In some examples, bottom finish 105 can be provided on protrusion bottom surface 1022a and on protrusion side surface 1022b and base bottom surface 1021b exposed through lower mold mold 103 (e.g., on the area of ​​wettable flank 1023).

[0031] The lower surface finish 105 and the upper surface finish 106 may include a plating layer or a diffusion area. In some examples, the plating layer may include silver (Ag), gold (Au), platinum (Pt), or palladium (Pd). In some examples, a silver plating layer of about 0.5 μm to about 2 μm may be provided on the surface of the die paddle 101 and the leads 102 exposed through the lower mold mold 103 or the upper mold mold 104 of the substrate 100. In some examples, a mask may be provided on the substrate 100, regions of the die paddle 101 and the leads 102 may be exposed through the mask, and a plating solution may be sprayed on the mask or the regions of the die paddle 101 and the leads 102 exposed through the substrate 100, or the substrate 100 may be immersed in a silver plating bath. In some examples, the silver plating layer may be diffused into the die paddle 101 and the leads 102 by heat treatment to provide a silver diffusion area. The heat treatment temperature and time can be adjusted in various ways depending on the type of substrate 100. The surface finish can be metallic, with good electrical conductivity and oxidation resistance, and can improve adhesion with gold wiring, copper wiring, or solder.

[0032] The wettable flank 1023 and the lower surface finish 105 on the protrusion lower surface 1022a can surround the lead 102 or isolate it from the ambient air. The area of ​​the lead 102 without the lower surface finish 105 or the upper surface finish 106 can be located inside the lower mold mold 103 or the upper mold mold 104. For example, the base side surface 1021c without the lower surface finish 105 or the upper surface finish 106 can be located in the upper mold mold 104, and the protrusion side surface 1022b and the lower base surface 1021b without the lower surface finish 105 can be located in the lower mold mold 103. Surrounding or completely surrounding the lead 102 with the upper surface finish 106, the lower surface finish 105, the upper mold mold 104, and the lower mold mold 103 can protect the lead 102 from oxidation due to exposure to ambient conditions. Providing bottom surface finish 105 over the entire surface of wettable flank 1023 also protects wettable flank 1023 from oxidation. Top surface finish 106 on lead 102 allows component interconnect 111 (FIG. 2I) to be easily connected to lead 102. Wettable flank 1023 and / or bottom surface finish 105 tend to improve solder adhesion when electronic device 10 or 10′ is attached to an external device. Wettable flank 1023 also tends to enable and / or improve visual inspection when electronic device 10 or 10′ is attached to an external device later in the process.

[0033] FIG. 2H shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2H, electronic component 110 is provided on die paddle 101. Electronic component 110 may be or comprise a semiconductor die, semiconductor chip, semiconductor package, semiconductor device, active component, or passive component. Electronic component 110 may be or comprise a digital signal processor (DSP), network processor, power management unit, audio processor, wireless baseband system-on-chip (SoC) processor, sensor, custom integrated circuit, memory, antenna-on-package (AoP), antenna-in-package (AiP), 5G NR millimeter-wave (mmWave) module, sub-6 gigahertz (GHz) radio frequency (RF) module, or integrated passive device (IPD).

[0034] In some examples, the electronic component 110 can be bonded to the die paddle 101 via an attach material 112. In some examples, the adhesive material 112 can be, or comprise, an adhesive, an adhesive film, or a die attach film. In some examples, the electronic component 110 can be bonded to the die paddle 101 via an adhesive material 112 including a silver epoxy paste or a silver-filled epoxy. In some examples, the adhesive material 112 can be first attached to the die paddle 101, and then the electronic component 110 can be pressed against the adhesive material 112 to bond the electronic component 110 to the die paddle 101. In some examples, the adhesive material 112 can be first attached to the electronic component 110, and then the electronic component 110 with the bonded adhesive material 112 can be attached to the die paddle 101. In some examples, heat can be applied simultaneously with the application of pressure. The thickness of the electronic component 110 can range from about 50 μm to about 800 μm. In some examples, the electronic components 110 may perform various operations such as, for example, processing, amplifying, filtering, or data storage.

[0035] FIG. 2I illustrates a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example illustrated in FIG. 2I, component interconnect 111 is provided. According to various examples, one end of component interconnect 111 can be coupled to electronic component 110, and the other end of component interconnect 111 can be coupled to lead 102. In some examples, one end of component interconnect 111 can be bonded to electronic component 110, and the other end can be bonded to die paddle 101 (e.g., ground component interconnect 111). Electronic component 110 can be in electronic communication with lead 102 through component interconnect 111. Component interconnect 111 can be or comprise a wire (e.g., gold or copper wire). The diameter of component interconnect 111 can range from about 10 μm to about 50 μm. Component interconnect 111 can transmit electrical signals between electronic component 110 and lead 102. Component interconnect 111 can carry electrical signals (eg, ground signals) between electronic component 110 and die paddle 101 .

[0036] FIG. 2J shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2J, encapsulant 120 is provided over electronic component 110 and substrate 100. encapsulant 120 may cover electronic component 110, component interconnects 111, and / or substrate 100. encapsulant 120 may contact substrate 100, electronic component 110, and component interconnects 111. In some examples, encapsulant 120 may contact die paddle 101, leads 102, ground leads 1024 ( FIG. 1B ), and top mold 104 of substrate 100. In some examples, encapsulant 120 may contact top surface finish 106 of die paddle 101, leads 102, and ground leads 1024. The encapsulant 120 can be, or can comprise, an epoxy molding compound, a resin, a filler-reinforced polymer, a B-stage compressed film, or a gel. In some examples, the encapsulant 120 can include an epoxy resin or a phenolic resin, carbon black, and a silica filler. In some examples, the encapsulant 120 can be applied by compression molding, transfer molding, liquid encapsulant molding, vacuum lamination, paste printing, or film-assisted molding. Compression molding can be a process of pre-filling a fluid molding material (e.g., a resin) into a mold, then placing the electronic component in the mold and allowing the fluid molding material to harden. Transfer molding is a process of filling a mold material around the electronic component using a gate (power supply port). The thickness of the encapsulant 120 can range from approximately 100 μm to approximately 1000 μm. The encapsulant 120 can protect the electronic components 110 and the component interconnects 111 from exposure to external elements or the environment and can rapidly dissipate heat from the electronic components 110. The material of the encapsulant 120 can be the same as or different from the material of the top mold 104 and / or bottom mold 103.

[0037] FIG. 2K shows a cross-sectional view of electronic device 10 or 10′ at a subsequent stage of fabrication. In the example shown in FIG. 2K, a singulation process is performed to provide individual electronic devices 10 and 10′. For example, a singulation tool (e.g., a saw, blade, cutter, laser, etc.) can saw or otherwise cut through encapsulant 120 and substrate 100 to separate individual electronic devices 10 and 10′ from one another. According to various examples, the singulation tool (e.g., a diamond blade wheel) cuts through top mold 104 and bottom mold 103 of substrate 100. Ground lead 1024 (FIG. 1B) is also cut, while other leads 102 remain uncut. For example, a portion of top mold 104 is located between base portion 1021 and a side (i.e., a saw edge) of top mold 104. 1B and 1C , a portion of the ground lead 1024 (e.g., the cut side) can be exposed through the encapsulant 120, the top mold die 104, and the bottom mold die 103. The leads 102 may not be cut, and thus the leads 102 may remain completely or substantially covered along the side of the substrate 100. Singulating the top mold die 104 and the bottom mold die 103 without cutting the leads 102 can reduce or prevent the formation of metal burrs on the side of the substrate 100. Preventing or reducing the formation of burrs and / or having the leads 102 covered by the top mold die 104 tends to improve electrical performance and / or reliability by reducing or preventing the formation of physical bridges (i.e., electrical shorts) between the leads 102.

[0038] Depending on the singulation, the sides of the encapsulant 120 and the substrate 100 may be flush. In some examples, the sides of the encapsulant 120, the sides of the top mold mold 104, and the sides of the bottom mold mold 103 may be flush. Depending on the singulation, the sides of the encapsulant 120, the sides of the top mold mold 104, and the sides of the bottom mold mold 103 are exposed on the outside of the device. In this manner, the electronic device 10′ can be provided.

[0039] FIG. 2L shows a cross-sectional view of the electronic device 10 at a subsequent stage of fabrication. In the embodiment shown in FIG. 2L, a shield 130 is provided. The shield 130 can cover the top and side surfaces of the encapsulant 120. In some examples, the shield 130 can cover the side surfaces of the substrate 100. In some examples, the shield 130 can cover the side surfaces of the top mold mold 104. In some examples, the shield 130 can be electrically connected to the exposed ground lead 1024 (FIG. 1B). The shield 130 can be spaced apart from the signal or power leads 102, and the top mold mold 104 can be between the signal or power leads 102 and the shield 130. The shield 130 can be or comprise an electromagnetic shield or a conformal shield. In some examples, the shield 130 can be provided by a sputtering process, a plating process, a spray coating process, a plasma deposition process, or a taping process. In some examples, a conformal shield is deposited using a target material in a vacuum during a sputtering process to improve density and contact resistance. Thin film bonding of the shield allows for thickness control and high yields.

[0040] In some examples, the sputtering process can be performed multiple times using the same or different metals. In some examples, electroless plating can be performed, which may be an electroless method that plates through a chemical reaction without using an external power source. In some examples, the plating process can proceed continuously through a spontaneous reduction reaction by simultaneously adding metal ions and a reducing agent to the plating solution. In some examples, electroless plating can be performed followed by electrolytic plating. In some examples, a spray coating process can be performed, which can include coating using a conductive mixed paint formed by mixing conductive powder or flakes with a resin such as silicone, epoxy, acrylic, or polyurethane. Since ink-type shields containing conductive powders are applied by spraying, the spray coating process exhibits high productivity and can be applied to various types of devices. In some examples, spray coating can be performed multiple times. In some examples, the shield 130 can include copper (Cu), aluminum (Al), nickel (Ni), palladium (Pd), gold (Au), silver (Ag), chromium (Cr), zinc (Zn), tin (Sn), titanium (Ti), iron (Fe), carbon black, or an alloy thereof. In some examples, the shield 130 can include a resin such as silicone, epoxy, acrylic, or polyurethane along with a conductive powder. In some examples, the thickness of the shield 130 can be in the range of about 3 μm to about 10 μm. The shield 130 can suppress radiation of electromagnetic waves from the electronic component 110. The shield 130 can also suppress penetration of electromagnetic waves into the electronic component 110.

[0041] 3A and 3B show cross-sectional views of an exemplary electronic device 20. The electronic device 20 shown in FIGS. 3A and 3B can be similar to the electronic device 10 shown in FIGS. 1A and 1B, but omits the top mold die 104. In the electronic device 20, the encapsulant 120 can contact the sides of the die paddle 101 and the ground leads 1024. In the electronic device 20, the encapsulant 120 can contact the base sides 1021c of the leads 102. In the electronic device 20, the encapsulant 120 can contact the top surface of the bottom mold die 103. In some examples, the bottom surface of the encapsulant 120 and the bottom base surfaces 1021b of the leads 102 can be coplanar (i.e., lie along or form approximately the same plane).

[0042] 3C shows a cross-sectional view of an exemplary electronic device 20'. The electronic device 20' shown in FIG. 3C can be similar to the electronic device 20 shown in FIGS. 3A and 3B, but omits the shield 130. In the electronic device 20', the top and side surfaces of the encapsulant 120 may be exposed.

[0043] 4A-4H illustrate cross-sectional views of an exemplary method for fabricating exemplary electronic device 20 or 20′. In some examples, the process illustrated in FIGS. 4A-4H can be referred to as a “wettable flank last” or “die first” process. The process for fabricating electronic device 20 or 20′ can also include the processes illustrated in FIGS. 2A-2D , such as providing feedstock 100′, etching a bottom surface of feedstock 100′, providing lower mold form 103, and etching a top surface of feedstock 100′.

[0044] 4A shows a cross-sectional view of electronic device 20 or 20′ at a stage of manufacturing (e.g., after the steps shown in FIGS. 2A-2D) after bottom and top etching and under-shaping have been performed. In the example shown in FIG. 4A, top surface finish 106 is provided on die paddle 101 and leads 102. For example, top surface finish 106 may be provided on top base surface 1021a of leads 102. The materials and process for providing top surface finish 106 may be the same as or similar to the process described above with reference to FIG. 2G.

[0045] 4B shows a cross-sectional view of electronic device 20 or 20′ at a subsequent stage of fabrication. In the example shown in FIG. 4B, electronic component 110 is bonded to die paddle 101. In some examples, electronic component 110 can be bonded to die paddle 101 via adhesive material 112, as described above.

[0046] 4C shows a cross-sectional view of electronic device 20 or 20′ at a subsequent stage of fabrication. In the example shown in FIG. 4C, component interconnect 111 is provided. Component interconnect 111 electrically couples electronic component 110 to leads 102. In some examples, component interconnect 111 may electrically couple electronic component 110 to die paddle 101 and / or ground lead 1024 (FIG. 3B). Component interconnect 111 may comprise a wire, as previously described.

[0047] FIG. 4D shows a cross-sectional view of electronic device 20 or 20′ at a subsequent stage of fabrication. In the example shown in FIG. 4D , encapsulant 120 is provided over electronic component 110 and substrate 100, including die paddle 101, leads 102, and bottom mold 103. Encapsulant 120 may cover electronic component 110 and component interconnects 111, as well as substrate 100. Encapsulant 120 may contact the side of die paddle 101. Encapsulant 120 may contact base side 1021c of leads 102. Encapsulant 120 may contact bottom mold 103. The materials and process for providing encapsulant 120 may be the same as or similar to those described above with reference to FIG. 2J.

[0048] 4E shows a cross-sectional view of electronic device 20 or 20′ at a subsequent stage of fabrication. In the example shown in FIG. 4E, wettable flank 1023 may be provided. In some examples, the process for forming wettable flank 1023 may be similar or the same as the process described above with reference to FIG. 2F. Upon formation of wettable flank 1023, a region of encapsulant 120 adjacent wettable flank 1023 may be exposed from the underside of substrate 100 (e.g., exposed through lower mold die 103).

[0049] FIG. 4F shows a cross-sectional view of electronic device 20 or 20′ at a subsequent stage of fabrication. In the example shown in FIG. 4F, a bottom surface finish 105 is provided. Bottom surface finish 105 may be provided on wettable flanks 1023 of leads 102. In some examples, bottom surface finish 105 may be provided on exposed portions of base bottom surface 1021b and protrusion side surface 1022b, as well as on protrusion bottom surface 1022a. The materials and process for providing bottom surface finish 105 may be similar or the same as the process described above with reference to FIG. 2G.

[0050] FIG. 4G shows a cross-sectional view of the electronic device 20 or 20′ at a subsequent stage of fabrication. In the example shown in FIG. 4G, a singulation process is performed to provide individual electronic devices 20 or 20′. For example, a singulation tool (e.g., a saw, blade, cutter, laser, etc.) can saw or otherwise cut through the encapsulant 120 and substrate 100 to separate the individual electronic devices 20 or 20′ from one another. The singulation process can be performed by cutting through the encapsulant 120 and substrate 100 using the singulation tool, thereby separating the individual electronic devices 20, including the substrate 100, from one another. The singulation process can be the same as or similar to the process described above with reference to FIG. 2K.

[0051] Depending on the singulation, the sides of the encapsulant 120 and the substrate 100 may be flush with each other. For example, the sides of the encapsulant 120 and the sides of the lower mold 103 may be flush with each other. Depending on the singulation, the sides of the encapsulant 120 and the sides of the lower mold 103 are exposed on the outside of the device. In this manner, the electronic device 20' can be provided.

[0052] By singulating the leads 102 via the encapsulant 120 and the lower mold die 103 without cutting the leads 102, the occurrence of metal burrs on the sides of the substrate 100 can be reduced or prevented. Preventing or reducing the occurrence of burrs and / or having the leads 102 covered by the encapsulant 120 tends to improve electrical performance and / or reliability by reducing or preventing the occurrence of physical bridges (i.e., electrical shorts) between the leads 102 that may be caused by metal burrs and / or environmentally induced Cu migration.

[0053] 4H shows a cross-sectional view of electronic device 20' at a subsequent stage of fabrication. In the example shown in FIG. 4H, a shield 130 may be provided. In some examples, shield 130 may cover the top and side surfaces of encapsulant 120. The process for providing shield 130 may be similar or the same as the process described above with reference to FIG. 2L.

[0054] FIG. 5A shows a cross-sectional view of an exemplary electronic device 30. The electronic device 30 shown in FIG. 5A can be similar to the electronic device 20 shown in FIGS. 3A and 3B, but omits the wettable flanks. In some examples, at least two rows of leads 102 can be arranged in an array or other pattern (e.g., staggered or zigzag) on ​​a first side (e.g., left side) of the die paddle 101. Two or more rows of leads 102 can be arranged in an array or other pattern on a second side (e.g., right side) of the die paddle 101 opposite the first side. In some examples, two or more rows of leads 102 can be arranged in an array or other pattern on a third side of the die paddle 101 that extends between the first and second sides of the die paddle 101, and two or more rows of leads 102 can be arranged in an array or other pattern on a fourth side of the die paddle 101 that is opposite the sides of the die paddle 101 and extends between the first and second sides of the die paddle 101. In that respect, the lead pattern can surround the die paddle 101.

[0055] In some examples, the leads 102 may be or include insulating pads. A lower mold 103 may be provided between the leads 102 and the shield 130. Multiple isolated pads may be arranged in rows and columns around one or more sides of the die paddle 101. The isolated pads may be formed at a narrower pitch than the other leads, thereby increasing the number of input / output pads and improving the performance of the electronic device 30. The shield 130 may improve design flexibility for the electronic device 30, such as by incorporating radio frequency devices. Furthermore, the high design flexibility of the device may allow the electronic device 30 to include a multi-chip module (MCM) or a system-in-package (SiP).

[0056] 5B shows a cross-sectional view of an exemplary electronic device 30'. The electronic device 30' shown in FIG. 5B can be similar to the electronic device 30 shown in FIG. 5A, except that the shield 130 is omitted. In the electronic device 30', the absence of the shield may expose the top and sides of the encapsulant 120 and the sides of the lower mold mold 103 to ambient conditions.

[0057] Figure 6A shows a top perspective view of an exemplary electronic device 40. Figures 6B and 6C show cross-sectional views of the electronic device 40. Figure 6B shows a cross-sectional view of the electronic device 40 taken along line A-A' in Figure 6A. Figure 6C shows a cross-sectional view of the electronic device 40 taken along line B-B' in Figure 6A.

[0058] In various examples, the electronic device 40 shown in FIGS. 6A, 6B, and 6C can be similar to the electronic device 10 shown in FIGS. 1A, 1B, and 1C, except that the substrate 100 has a bridge 1025. A first electronic component 110a and a second electronic component 110b can be provided on the substrate 100, and a conductor 140 ( FIGS. 6B and 6C ) can be provided between the first electronic component 110a and the second electronic component 110b. The conductor 140 can function as an EMI shield. The first electronic component 110a can be electrically connected to the leads 102 and the bridge 1025 via component interconnect 111a. The second electronic component 110b can be electrically connected to the leads 102 and the bridge 1025 via component interconnect 111b. The conductor 140 can be electrically connected to and / or contact the shield 130. The conductor 140 can be spaced apart from the bridge 1025. For example, the encapsulant 120 can be vertically disposed between the conductors 140 and the bridges 1025. The conductors 140 can vertically overlap multiple bridges 1025, and the bridges 1025 can electrically connect the first electronic component 110a and the second electronic component 110b.

[0059] 7A-7H illustrate cross-sectional views of an exemplary method for fabricating an exemplary electronic device 40. The cross-sectional views illustrated in Figures 7A, 7C, 7E, and 7G correspond to line A-A' in Figure 6A. The cross-sectional views illustrated in Figures 7B, 7D, 7F, and 7H correspond to line B-B' in Figure 6A.

[0060] 7A and 7B show cross-sectional views of an electronic device 40 at a later manufacturing stage. For example, as shown in FIGS. 7A and 7B, the electronic device 40 can be provided by a manufacturing process similar to that shown in FIGS. 2A-2J. In some examples, the electronic device 40 can be provided using the manufacturing process shown in FIGS. 4A-4F. The electronic device 40 shown in FIGS. 7A and 7B includes a first electronic component 110a and a second electronic component 110b disposed on respective die paddles 101. The first electronic component 110a can be laterally spaced apart from the second electronic component 110b. The substrate 100 can include one or more bridges 1025. In some examples, the bridges 1025 can be made of a material similar to the leads 102 and the die paddle 101. The sides of the bridges 1025 can be within and / or in contact with the top mold mold 104. The lower surface of the bridge 1025 may be located on and / or in contact with the lower mold die 103. The upper surface of the bridge 1025 and the upper surface of the upper mold die 104 may be in contact with the encapsulant 120. The thickness of the bridge 1025 may be in the range of about 50 μm to about 100 μm. The lateral width of the bridge 1025 may be in the range of about 100 μm to about 1500 μm. The bridge 1025 may electrically couple the first electronic component 110a and the second electronic component 110b.

[0061] 7C and 7D show cross-sectional views of the electronic device 40 at a subsequent manufacturing stage. In the example shown in FIGS. 7C and 7D , a trench 1027 is formed in the encapsulant 120. The trench 1027 can be formed partially through the encapsulant 120 such that the depth of the trench 1027 is less than the thickness of the encapsulant 120. For example, the encapsulant 120 can define the bottom of the trench 1027. In some examples, the trench 1027 can vertically overlap multiple bridges 1025. The trench 1027 can be or include a groove, recess, or channel defined by the encapsulant 120. The trench 1027 can be formed by a mechanical process, chemical etching, laser ablation, or other suitable forming process. In some examples, the trench 1027 can be formed during deposition of the encapsulant 120 (e.g., using a mold chase or other tool that prevents the encapsulant from being deposited in the area of ​​the trench 1027). The depth of the trench 1027 can range from about 20 μm to about 980 μm. The width of the trench 1027 can range from about 20 μm to about 1480 μm. The bottom surface (i.e., bottom) of the trench 1027 can be spaced apart from the bridge 1025 and the upper surface of the upper mold mold 104. The separation distance from the bottom surface of the trench 1027 to the upper surface of the bridge 1025 and the upper surface of the upper mold mold 104 can be from about 20 μm to about 980 μm. The separation distance between the inner sidewall of the trench 1027 (i.e., the inner side surface of the encapsulant 120) and the outer side surface of the encapsulant 120 can range from about 20 μm to about 1480 μm. The separation distance can be substantially the same as the thickness of the encapsulant 120 at the boundary defining the trench 1027.

[0062] 7E and 7F show cross-sectional views of electronic device 40 at subsequent manufacturing stages. In the example shown in FIGS. 7E and 7F, conductor 1025 is disposed within trench 1027 (FIGS. 7C and 7D). In some examples, conductor 1025 may fill trench 1027. The top surface of conductor 1025 may be flush with the top surface of encapsulant 120. The top surface of conductor 1025 may be exposed through encapsulant 120.

[0063] The conductor 1025 may be or comprise a shield, an internal shield, a compartment shield, a wall, or a partition. The conductor 1025 may be formed of a metal or a metal alloy. In some examples, the conductor 1025 may be a conductive paste. The conductor 1025 may include copper (Cu), aluminum (Al), nickel (Ni), palladium (Pd), gold (Au), silver (Ag), chromium (Cr), zinc (Zn), tin (Sn), titanium (Ti), stainless steel (Fe), or carbon black. In some examples, a liquid conductive material may fill the trench, and heat or light may harden the conductive material to form or provide the conductor 1025. The conductor 1025 may be provided in the trench 1027 by sputtering, plating, spray coating, diffusion, plasma deposition, or other suitable deposition method. The thickness and width of the conductor 1025 may be similar to the depth and width of the trench.

[0064] 7G and 7H show cross-sectional views of the electronic device 40 at subsequent manufacturing stages. In the examples shown in FIGS. 7G and 7H, a shield 130 is provided over the encapsulant 120 and the conductor 1025. The process for forming the shield 130 shown in FIGS. 7G and 7H can be similar to the process for forming the shield 130 shown in FIG. 2L or 4H. The shield 130 can be coupled to the conductor 1025. In addition to shielding the first electronic component 110a and the second electronic component 110b from external electrical interference, the conductor 1025 and the shield 130 can suppress electromagnetic interference between the first electronic component 110a and the second electronic component 110b.

[0065] FIG. 8 shows a cross-sectional view of an exemplary electronic device 40′. The electronic device 40′ shown in FIG. 8 can be similar to the electronic device 40 shown in FIGS. 6A, 6B, and 6C, except that the electronic components 110a and 110b are electrically connected to the substrate 100 using a flip-chip method. In some examples, the electronic components 110a and 110b can be connected to the leads 102 through component interconnects 111a′ and 111b′. The component interconnects 111a′ and 111b can comprise bumps, pillars, solder-capped pillars, or the like. In some examples, the leads 102 are replaced by the die paddle 101 (FIG. 7B). In some examples, one or more of the leads 102 of the device 40′ of FIG. 8 can comprise a separated pad array, similar to the leads 102 of the device 30′ of FIG. 5B.

[0066] FIG. 9A shows a top perspective view of an exemplary electronic device 50. FIGS. 9B, 9C, and 9D show cross-sectional views of electronic device 50. FIG. 9B shows a cross-sectional view along line A-A' in FIG. 9A. FIG. 9C shows a cross-sectional view along line B-B' in FIG. 9A. FIG. 9D shows a cross-sectional view along line C-C' in FIG. 9A. According to various examples, electronic device 50 can be similar to electronic device 40 shown in FIGS. 6A-6C, except that electronic device 50 further includes conductor support 1026, conductor 150, and groove 125. Conductor 150 can function as an EMI shield and can be coupled to and / or contact shield 130. Although electronic device 50 is shown with first electronic component 110a and second electronic component 110b coupled to substrate 100 via component interconnects 111a and 111b comprising wires, it is contemplated and understood that in some examples, first electronic component 110a and / or second electronic component 110b may be coupled to substrate 100 in a flip-chip fashion, similar to electronic device 40' of FIG. 8.

[0067] 10A-10I illustrate cross-sectional views of an exemplary method for fabricating an exemplary electronic device 50. The cross-sectional views shown in FIGS. 10A, 10D, and 10G correspond to line A-A' in FIG. 9A. The cross-sectional views shown in FIGS. 10B, 10E, and 10H correspond to line B-B' in FIG. 9A. The cross-sectional views shown in FIGS. 10C, 10G, and 10I correspond to line C-C' in FIG. 9A.

[0068] 10A, 10B, and 10C illustrate electronic device 50 at subsequent stages of fabrication. For example, as shown in FIGS. 10A, 10B, and 10C, electronic device 50 can be formed by a fabrication process similar to that shown in FIGS. 2A-2J. In some examples, electronic device 50 can be provided using the fabrication process shown in FIGS. 4A-4F. Substrate 100 of electronic device 500 can include conductor supports 1026. Conductors 150 can be coupled to conductor supports 1026.

[0069] The conductor supports 1026 and conductors 150 can be disposed laterally between the first electronic component 110a and the second electronic component 110b. In some examples, the conductor supports 1026 and conductors 150 can be positioned midway (i.e., approximately equally spaced) between the first electronic component 110a and the second electronic component 110b. In some examples, the conductor supports 1026 and conductors 150 can be closer to the first electronic component 110a than to the second electronic component 110b. In some examples, the conductor supports 1026 can be alternately positioned between the bridges 1025. The lower surface of the conductor supports 1026 can contact the lower mold mold 103, and the side surface of the conductor supports 1026 can contact the upper mold mold 104. The upper surface of the conductor supports 1026 can be flush with the upper surface of the upper mold mold 104. The upper surface of the conductor supports 1026 can contact the lower surface of the encapsulant 120. The material of the conductor support 1026 can be similar to or the same as the material of the die paddle 101 and the leads 102. The thickness of the conductor support 1026 can be similar to the thickness of the bridge 1025 and base portion 1021 of the leads 102.

[0070] The conductor 150 may be disposed on the conductor support 1026. The conductor 150 may extend upward from the conductor support 1026. In some examples, the material and diameter of the conductor 150 may be similar to the material and diameter of the component interconnect 111. In some examples, the conductor 150 may be, or may comprise, a conductive wire, a metal post, a stacked bump, or a copper pillar. In some examples, the conductor 150 may extend upward in a straight line on the conductor support 1026. In some examples, the lower end of the conductive wire may be ball-bonded to the conductor support 1026, and the upper end of the conductive wire may be spaced apart from the top surface of the encapsulant 120. The length of the conductor 150 may range from about 100 μm to about 1500 μm.

[0071] 10D, 10E, and 10F show cross-sectional views of the electronic device 50 at subsequent manufacturing stages. In the examples shown in FIGS. 10D, 10E, and 10F, a groove 125 is provided in the encapsulant 120. The groove 125 vertically overlaps the conductor 150. In some examples, the groove 125 can be provided to span multiple bridges 1025, multiple conductor supports 1026, and the conductor 150. The groove 125 can be formed to a depth suitable for exposing the upper ends of the conductors 150. The depth of the groove 125 can range from about 20 μm to about 980 μm. The process for forming the groove 125 can be similar to or the same as the process for forming the trench 1027, as described above with reference to FIGS. 7C and 7D.

[0072] 10G, 10H, and 10I show cross-sectional views of the electronic device 50 at subsequent manufacturing stages. In the examples shown in FIGS. 10G, 10H, and 10I, a shield 130 may be provided. The shield 130 may cover the top and side surfaces of the encapsulant 120. The shield 130 may be provided in the groove 125 (FIGS. 10D, 10E, and 10F). The process for forming the shield 130 shown in FIGS. 10G, 10H, and 10I may be similar to the method for forming the shield 130 in FIGS. 2L, 4H, or 7C and 7D. The shield 130 may be bonded to the conductor 150. For example, the shield 130 may be bonded to and / or in contact with the upper end of the conductor 150 exposed along the bottom of the groove 125. The conductor 150 and the shield 130 tend to shield electromagnetic waves and suppress EMI. In addition to shielding the first electronic component 110a and the second electronic component 110b from external electrical interference, the conductor 150 and the shield 130 can suppress electromagnetic interference between the first electronic component 110a and the second electronic component 110b.

[0073] 11A shows a top perspective view of an exemplary electronic device 60. FIG. 11B and FIG. 11C show cross-sectional views of the exemplary electronic device 60. FIG. 11B shows a cross-sectional view along line A-A' in FIG. 11A. FIG. 11C shows a cross-sectional view along line B-B' in FIG. 11A.

[0074] According to various examples, electronic device 60 is similar to electronic device 50 shown in Figures 9A-9D, with one or more conductors 160 extending between conductor supports 1026. Although electronic device 60 is shown with first electronic component 110a and second electronic component 110b coupled to substrate 100 via component interconnects 111a and 111b comprising wires, it is contemplated and understood that in some examples, first electronic component 110a and / or second electronic component 110b may be coupled to substrate 100 in a flip-chip fashion, similar to electronic device 40' of Figure 8.

[0075] In some examples, the conductors 160 are provided in a curved, angled, bent, inverted "U" or inverted "V" shape. In some examples, one end or portion of the conductors 160 can be joined to a first conductor support 1026, and the opposite end or portion of the conductors 160 can be joined to a second conductor support 1026. In some examples, the conductors 160 can cross a bridge 1025. For example, the conductors 160 can extend above or vertically overlap the bridge 1025. In some examples, the conductors 160 can be or comprise a wire fence, conductive wire, or wire loop. The conductor supports 1026 can be electrically coupled or shorted by multiple conductors 160. In some examples, the conductors 160 can comprise one, unitary, or integral part extending between and joined to multiple conductor supports 1026. In other embodiments, the conductors 160 are multiple individual structures, each extending between, for example, two conductor supports 160, and the two conductors 160 are coupled to the same conductor support.

[0076] In some examples, ends of one or more conductors 160 can be disposed on or around the outer edge of the encapsulant 120 and can be coupled to and / or in contact with the shield 130. For example, ends of the conductors 160 can be exposed from the encapsulant 120. In some examples, one or more conductor supports 1026 can extend to or around the outer edge of the encapsulant 120 and can be coupled to and / or in contact with the shield 130. In some examples, the conductors 160, conductor supports 1026, and shield 130 can all be electrically coupled. The electronic device 60 can also be referred to as a "wire fence" type electronic device. The conductors 160 and the shield 130 tend to shield electromagnetic waves and suppress EMI. In addition to shielding the first electronic component 110a and the second electronic component 110b from external electrical interference, the conductors 160 and the shield 130 can suppress electromagnetic interference between the first electronic component 110a and the second electronic component 110b.

[0077] FIG. 12A shows a top perspective view of an exemplary electronic device 70. FIG. 12B shows a cross-sectional view of the electronic device 70 taken along line A-A′ in FIG. 12A . In the example shown in FIGS. 12A and 12B , the electronic device 70 is similar to the electronic device 60 shown in FIGS. 11A and 11B , with the conductors 170 extending over and vertically overlapping the second electronic component 110b. While the electronic device 70 is shown with the first electronic component 110a and the second electronic component 110b coupled to the substrate 100 via component interconnects 111a and 111b comprising wires, in some examples, the first electronic component 110a and / or the second electronic component 110b can be coupled to the substrate 100 in a flip-chip fashion, similar to the electronic device 40′ of FIG. 8 .

[0078] According to various examples, conductor supports 1026 can be provided between bridges 1025 and between leads 102. The conductor supports 1026 can be generally disposed around the second electronic component 110b. The conductor supports 1026 can be spaced apart from and surround the second electronic component 110b. The conductor supports 1026 can be disposed in a generally square or rectangular periphery around the second electronic component 110b. Some sides of the conductor supports 1026 can be flush with sides of the encapsulant 120 and / or sides of the upper mold 104. Sides of one or more of the conductor supports 1026 can be coupled to and / or contact the shield 130.

[0079] The conductors 170 may be connected to the conductor supports 1026 in a curved, angled, bent, inverted "U" or inverted "V" shape. In some examples, the conductors 170 may comprise or be a wire cage, conductive wire, or wire loop. The conductors 170 may generally surround the top and side surfaces of the second electronic component 110b. The conductors 170 may be connected to two conductor supports 1026, e.g., a first conductor support 1026 located on a first side of the second electronic component 110b and a second conductor support 1026 located on a second side of the second electronic component 110b. The conductors 170 may be connected to the opposite conductor supports 1026 along or parallel to an imaginary line connecting the opposite corners. The lengths of the conductors 170 may be different. The length of the conductor 170 near the center of the die paddle 101 or the second electronic component 110b can be relatively long, and the length of the conductor 170 farthest from the die paddle 101 or the second electronic component 110b can be relatively short. In some examples, the conductor 170 can be oriented in a direction that intersects with or is substantially perpendicular to the ground lead 1024. In some examples, the conductor 170 can be oriented in a direction that is substantially parallel to the ground lead 1024. The height of the conductor 170 can be greater than the height of the component interconnect 111. The conductor 170 can be spaced apart from the component interconnect 111. The material and diameter of the conductor 170 can be similar to the material and diameter of the component interconnect 111. In some examples, the electronic device 70 may be referred to as a "wire cage" type electronic device. The conductor 170 and the shield 130 tend to shield electromagnetic waves and suppress EMI. In addition to shielding the first electronic component 110a and the second electronic component 110b from external electrical interference, the conductor 170 and the shield 130 can suppress electromagnetic interference between the first electronic component 110a and the second electronic component 110b.

[0080] The electronic device of the present disclosure can have wettable flanks without exposing Cu. The top-side molding and bottom-side molding techniques tend to improve device reliability and prevent metal burrs from being introduced into the electronic device. Various electromagnetic shielding technologies can be integrated with the wettable flanks for greater design flexibility in high-frequency and other devices. The isolation pads in the rtMLF can create high-performance devices with high input / output counts.

[0081] While the present disclosure includes reference to particular examples, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the present disclosure. Additionally, modifications may be made to the disclosed examples without departing from the scope of the present disclosure. Accordingly, the present disclosure is not limited to the disclosed examples, but is intended to include all examples that fall within the scope of the appended claims.

Claims

1. a plurality of leads including a conductive material, one of the leads including a base portion and a protrusion extending from a lower surface of the base portion; a die paddle between the plurality of leads, the die paddle including the conductive material; a lower mold over a periphery of a first side of the protrusion and a side of the die paddle; a bottom surface finish applied to the bottom surface of the protrusion; an electronic component coupled to the die paddle and in electronic communication with the one lead.

2. The electronic device of claim 1 further comprising a top mold disposed over the bottom mold and around sides of the base portion and the die paddle.

3. The electronic device of claim 2 , wherein the one lead is separated from the die paddle by the top mold and the bottom mold.

4. The electronic device of claim 1 further comprising an encapsulant disposed over the electronic component, over the lower mold, and around sides of the base portion and sides of the die paddle.

5. 2. The electronic device of claim 1, wherein the underside finish is applied to a lower surface of the base portion, a second side of the protrusion opposite the first side of the protrusion, and the lower surface of the protrusion to form a wettable flank.

6. The electronic device of claim 1 further comprising a shield disposed over the electronic component and around a side of the base portion of the one lead.

7. The electronic device of claim 6 further comprising a ground lead integrally formed with the die paddle and electrically coupled to the shield.

8. a second electronic component located next to the first electronic component; a bridge comprising the conductive material; an electromagnetic interference (EMI) shield disposed on the bridge and between the first electronic component and the second electronic component; the die paddle is located between the one lead and the bridge; The electronic device of claim 6 , wherein the EMI shield is electrically coupled to the shield.

9. The electronic device of claim 8 , wherein the EMI shield comprises a wire fence, a conductive paste, or a vertical wire.

10. The electronic device of claim 6 further comprising a wire cage extending around the side of the electronic component and electrically connected to the shield.

11. 2. The electronic device of claim 1, wherein the one lead is surrounded by the lower surface finish, the lower mold, an upper mold arranged around the side of the base portion, and an upper surface finish applied to the upper surface of the lead.

12. The electronic device of claim 1 , wherein the bottom surface finish comprises a silver plating layer.

13. The electronic device of claim 1 , wherein the lower mold die is located on a second side of the protrusion opposite the first side.

14. providing a plurality of leads comprising a conductive material, one lead of the plurality of leads including a base portion and a protrusion extending from a lower surface of the base portion; providing a die paddle including the conductive material and disposed between the plurality of leads; providing a lower mold over a first side of the protrusion and a periphery of a side of the die paddle; providing a bottom surface finish on the bottom surface of said protrusion; providing an electronic component coupled to the die paddle and in electronic communication with the one lead.

15. 15. The method of claim 14, further comprising providing an upper mold mold over the lower mold mold and around the sides of the base portion and the die paddle.

16. 15. The method of claim 14, further comprising providing an encapsulant over the electronic component, over the lower mold, and around sides of the base portion and sides of the die paddle.

17. 15. The method of claim 14, wherein the underside finish is applied to a lower surface of the base portion, a second side of the protrusion opposite the first side of the protrusion, and the lower surface of the protrusion to form a wettable flank.

18. 15. The method of claim 14, wherein the one lead is separated from the die paddle by a top mold die and the bottom mold die.

19. 15. The method of claim 14, wherein the one lead is surrounded by the lower surface finish, the lower mold, an upper mold disposed around the side of the base portion, and an upper surface finish applied to the upper surface of the lead.

20. a lead comprising a conductive material and including a base portion and a protrusion extending from a lower surface of the base portion; a die paddle adjacent to the leads and including the conductive material; a lower mold die disposed on a periphery of a first side of the protrusion and a side of the die paddle and positioned between the leads and the die paddle; a surface finish applied to the underside of the protrusion to form a wettable flank; an electronic component coupled to the die paddle and in electronic communication with the leads.

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