Gas supply device and plasma processing device

Abstract

To implement fast switching of process gas at low cost.SOLUTION: A gas supply device 30 comprises: a plurality of supply source pipes 31; a plurality of upstream pipes 32 branched from the supply source pipes 31 and corresponding to a plurality of supply positions 21 in a chamber 20; a plurality of flow rate controllers 33 provided in the upstream pipes 32; a plurality of midstream pipes 34 branched from the upstream pipes 32 and corresponding to a plurality of processing steps performed in the chamber 20; a plurality of valves 35 provided in the midstream pipes 34; a plurality of downstream pipes 36 to each of which the midstream pipe 34 corresponding to the same supply position 21 and the same processing step is confluent; a plurality of outflow pipes 38 each of which is connected to the downstream pipe 36 corresponding to the same supply position 21 via a switching section 37 and connected to one supply position 21; and a control section 39 which controls the switching section 37 so as to switch the downstream pipes 36 which fluid-communicate to the plurality of outflow pipes 38 in accordance with the processing steps.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a gas supply device and a plasma processing device. [Background technology]

[0002] Conventionally, gas supply devices for supplying a process gas to a chamber where plasma processing is performed are known (see, for example, Patent Document 1). The gas supply device of Patent Document 1 includes a first gas supply pipe for supplying a first process gas to the center of the chamber, a second gas supply pipe for supplying the first process gas to the outer periphery of the chamber, a third gas supply pipe for supplying the second process gas to the center of the chamber, and a fourth supply pipe for supplying the second process gas to the outer periphery of the chamber. One of the first and second gas supply pipes and the third and fourth gas supply pipes is set to an open state, and the other is set to a closed state, thereby selectively performing plasma processing using the first process gas and plasma processing using the second process gas. Each of the first to fourth gas supply pipes is provided with a flow control valve whose opening is adjustable. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-4931 Summary of the Invention [Problem to be solved by the invention]

[0004] As described above, in the gas supply apparatus of Patent Document 1, a flow control valve is provided for each of the first to fourth gas supply pipes. The number of the first to fourth gas supply pipes or the number of flow control valves (four in this case) is equal to the product of the number of process gas types (two in this case) and the number of process gas supply areas (two areas in this case, the central and outer periphery of the chamber). This is equivalent to providing one flow control valve for each location where flow control is desired. However, because flow control valves are relatively expensive components, it is desirable to minimize their number in order to reduce the manufacturing cost of the gas supply apparatus. However, simply reducing the number of flow control valves may result in failure to achieve the desired functions of the gas supply apparatus, such as the ability to switch process gases at high speed. In this situation, one of the objectives of the present disclosure is to achieve high-speed switching of process gases at low cost. [Means for solving the problem]

[0005] One aspect of the present disclosure relates to a gas supply apparatus including: a plurality of supply source pipes through which process gas flows; a plurality of upstream pipes branching from the supply source pipes and corresponding to a plurality of supply positions within a chamber; a plurality of flow rate controllers provided to the upstream pipes; a plurality of midstream pipes branching from the upstream pipes and corresponding to a plurality of process steps performed within the chamber; a plurality of valves provided to the midstream pipes; a plurality of downstream pipes at which the midstream pipes corresponding to the same supply positions and the same process steps converge; a plurality of outlet pipes connected to the downstream pipes corresponding to the same supply positions via a switching unit, each outlet pipe connecting to one of the supply positions; and a controller controlling the switching unit to switch the downstream pipes fluidly connected to the plurality of outlet pipes according to the process steps.

[0006] Another aspect of the present disclosure relates to a plasma processing apparatus including a chamber in which plasma processing is performed and the above-described gas supply apparatus for supplying a process gas to the chamber. [Effects of the Invention]

[0007] According to the present disclosure, high-speed switching of process gases can be achieved at low cost. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic configuration diagram illustrating an example of a plasma processing apparatus according to the present disclosure. [Figure 2] FIG. 4 is a schematic diagram showing the flow of the process gas in the first control. [Figure 3] FIG. 10 is a schematic diagram showing the flow of the process gas in the second control. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following describes an example of an embodiment of a gas supply device and a plasma processing device according to the present disclosure. However, the present disclosure is not limited to the example described below. While the following description may use specific numerical values ​​and materials, other numerical values ​​and materials may be used as long as the effects of the present disclosure are obtained.

[0010] (Gas supply equipment) A gas supply apparatus according to the present disclosure is an apparatus for supplying a process gas to a chamber in which plasma processing is performed, and includes a plurality of supply source pipes, a plurality of upstream pipes, a plurality of flow rate controllers, a plurality of midstream pipes, a plurality of valves, a plurality of downstream pipes, a plurality of outlet pipes, and a control unit.

[0011] A process gas flows through the plurality of supply pipes. Each supply pipe may be connected to a gas source that supplies the process gas. The process gas may be a process gas for plasma processing (e.g., plasma etching processing). Each supply pipe may be a single process gas. The number of supply pipes is not particularly limited, and may be, for example, the same number as the number of types of process gas used in the plasma processing.

[0012] The multiple upstream pipes branch off from the supply source pipe. The multiple upstream pipes correspond to multiple supply positions within the chamber. The multiple upstream pipes may branch off from each supply source pipe, or may branch off from some of the supply source pipes. For example, if there are two types of supply positions within the chamber, two upstream pipes may branch off from one supply source pipe. The supply source pipe and the multiple upstream pipes may be connected to each other via a supply source pipe branching section. In other words, the supply source pipe may branch off into multiple (e.g., two) upstream pipes by the supply source pipe branching section. Plasma processing may be performed inside the chamber. The multiple supply positions may include, for example, a central supply position and an outer peripheral supply position. The number of the multiple supply positions and the corresponding upstream pipes is not particularly limited and may be, for example, two or more and four or less.

[0013] A plurality of flow rate controllers are provided in each upstream pipe. For example, one flow rate controller may be provided in each upstream pipe. Each flow rate controller may control the flow rate of the process gas flowing through the upstream pipe in which it is provided. Each flow rate controller may be configured, for example, by a mass flow controller (MFC). The operation of each flow rate controller may be controlled by a control unit.

[0014] The multiple midstream pipes branch off from the upstream pipe. The multiple midstream pipes correspond to the multiple processing steps performed in the chamber. The multiple midstream pipes may branch off from each upstream pipe or from some of the upstream pipes. For example, if two processing steps are performed in the chamber, two midstream pipes may branch off from one upstream pipe. The upstream pipe and the multiple midstream pipes may be connected to each other via an upstream pipe branching section. In other words, the upstream pipe may branch off into multiple (e.g., two) midstream pipes by an upstream pipe branching section. The multiple processing steps may be considered as two processing steps depending on the type of process gas used therein. For example, if there are two processing steps that primarily use a first process gas and two processing steps that primarily use a second process gas, the former two processing steps may be considered as first processing steps, and the latter two processing steps may be considered as second processing steps. In this case, "multiple processing steps" may be interpreted as "two processing steps." However, this interpretation does not prevent the presence of three or more processing steps.

[0015] A plurality of valves are provided in each midstream pipe. For example, one valve may be provided in each midstream pipe. Each valve may allow or prohibit the flow of process gas in the midstream pipe in which it is provided. Each valve may be configured, for example, as an electromagnetic valve that can be opened and closed. The operation of each valve may be controlled by a control unit.

[0016] Multiple downstream pipes may be joined by midstream pipes corresponding to the same supply position and the same processing step. For example, if there are two supply positions, one at the center and one at the outer periphery of a chamber, and two processing steps are performed in the chamber, multiple midstream pipes corresponding to the supply position at the center and one processing step may be joined into one downstream pipe, multiple midstream pipes corresponding to the supply position at the center and the other processing step may be joined into another downstream pipe, multiple midstream pipes corresponding to the supply position at the outer periphery and one processing step may be joined into yet another downstream pipe, and multiple midstream pipes corresponding to the supply position at the outer periphery and the other processing step may be joined into yet another downstream pipe. The multiple midstream pipes and each downstream pipe may be connected to each other via a single junction. In other words, each midstream pipe may be joined by a junction and connected to the downstream pipe.

[0017] The multiple outlet pipes are connected to downstream pipes corresponding to the same supply position via a switching unit. Each of the multiple outlet pipes is connected to one supply position. For example, if there are two types of supply positions, one on the central side and one on the peripheral side of the chamber, one outlet pipe may be connected to multiple downstream pipes corresponding to the supply positions on the central side via one switching unit, and another outlet pipe may be connected to multiple downstream pipes corresponding to the supply positions on the peripheral side via another switching unit. The switching unit may exclusively connect one of the multiple downstream pipes connected to it to the outlet pipe connected to it.

[0018] The control unit controls the switching unit so that downstream pipes fluidly connected to the plurality of outflow pipes are switched depending on the processing step. For example, when two processing steps are performed in the chamber, the control unit may control the switching unit so that the downstream pipe corresponding to one processing step is fluidly connected to the outflow pipe and the downstream pipe corresponding to the other processing step is not fluidly connected to the outflow pipe. The control unit may include a computing device and a storage device storing a program executable by the computing device.

[0019] In the gas supply system having the above configuration, the process gas flows through the supply source pipe, upstream pipe, midstream pipe, downstream pipe, and outlet pipe in this order before being discharged into the chamber. When the process gas flows from one supply source pipe to multiple upstream pipes, it is divided into multiple supply locations within the chamber. In each upstream pipe, a flow rate controller controls the flow rate of the process gas. Then, when the process gas flows from one upstream pipe to multiple midstream pipes, it is further divided into multiple flow locations corresponding to the processing steps performed in the chamber. The process gas then flows from at least one midstream pipe corresponding to an open valve into the downstream pipe, and from that downstream pipe, it flows into the outlet pipe via a switching unit. The process gas then flows through the outlet pipe into the chamber, where it is subjected to plasma processing. The process gas is switched by a switching unit located near the chamber. Therefore, the process gas supplied after the switching only mixes with other process gas remaining between the switching unit and the chamber, i.e., in the outlet pipe, thereby enabling high-speed process gas switching. Furthermore, when switching, pressure fluctuations within the chamber can be suppressed.

[0020] Furthermore, while it is common to provide a flow controller in each midstream pipe to precisely control the flow rate of the process gas, the gas supply apparatus according to the present disclosure provides a flow controller in each upstream pipe located upstream thereof, thereby reducing the number of required flow controllers without excessively compromising the flow rate control of the process gas. That is, when switching process gases using a switching unit according to a processing step, providing a flow controller in each midstream pipe allows for separate flow control of the midstream pipe through which the process gas flows before the switching and the midstream pipe through which the process gas flows after the switching. By performing the latter flow control in advance, it is easy to achieve the desired flow rate control even immediately after the switching. On the other hand, if a flow controller is provided in each upstream pipe, a single flow controller is required to control both the flow rate of the midstream pipe through which the process gas flows before the switching and the flow rate of the midstream pipe through which the process gas flows after the switching. The inventors of the present application have found that even in such a case, the response time of the flow rate controller is sufficiently shorter than the time required for replacing the process gas, and therefore, flow rate control by one flow rate controller for multiple midstream pipes is sufficient. Therefore, in the present disclosure, by providing flow rate controllers not in the midstream pipes but in the upstream pipes, which are fewer in number, the number of required flow rate controllers is reduced, thereby reducing the manufacturing cost of the gas supply device.

[0021] The multiple supply source pipes may include a first supply source pipe through which a first process gas flows and a second supply source pipe through which a second process gas flows. The multiple upstream pipes may include a first upstream pipe branching from the first supply source pipe and corresponding to the first supply position and a second upstream pipe branching from the second supply source pipe and corresponding to the second supply position, and a third upstream pipe branching from the second supply source pipe and corresponding to the first supply position and a fourth upstream pipe branching from the second supply source pipe. The multiple flow rate controllers may include a first flow rate controller provided in the first upstream pipe, a second flow rate controller provided in the second upstream pipe, a third flow rate controller provided in the third upstream pipe, and a fourth flow rate controller provided in the fourth upstream pipe. The multiple midstream pipes may include a first midstream pipe branching from the first upstream pipe and corresponding to the first treatment step and a second midstream pipe corresponding to the second treatment step, a third midstream pipe branching from the second upstream pipe and corresponding to the first treatment step and a fourth midstream pipe branching from the second upstream pipe, a fifth midstream pipe branching from the third upstream pipe and corresponding to the first treatment step and a sixth midstream pipe branching from the third upstream pipe, and a seventh midstream pipe branching from the fourth upstream pipe and corresponding to the first treatment step and an eighth midstream pipe branching from the fourth upstream pipe. The multiple valves may include a first valve provided in the first midstream pipe, a second valve provided in the second midstream pipe, a third valve provided in the third midstream pipe, a fourth valve provided in the fourth midstream pipe, a fifth valve provided in the fifth midstream pipe, a sixth valve provided in the sixth midstream pipe, a seventh valve provided in the seventh midstream pipe, and an eighth valve provided in the eighth midstream pipe. The multiple downstream pipes may include a first downstream pipe where the first midstream pipe and the fifth midstream pipe join, a second downstream pipe where the second midstream pipe and the sixth midstream pipe join, a third downstream pipe where the third midstream pipe and the seventh midstream pipe join, and a fourth downstream pipe where the fourth midstream pipe and the eighth midstream pipe join. The multiple outlet pipes may include a first outlet pipe connected to the first downstream pipe and the second downstream pipe via a first switching unit and connected to a first supply position, and a second outlet pipe connected to the third downstream pipe and the fourth downstream pipe via a second switching unit and connected to a second supply position.The first switching unit may be a first switching valve that fluidically connects one of the first downstream pipe and the second downstream pipe to the first outflow pipe. The second switching unit may be a second switching valve that fluidically connects one of the third downstream pipe and the fourth downstream pipe to the second outflow pipe. The control unit may perform a first control that fluidically connects the first downstream pipe to the first outflow pipe using the first switching valve and fluidically connects the third downstream pipe to the second outflow pipe using the second switching valve, and closes the second, fourth, sixth, and eighth valves; and a second control that fluidically connects the second downstream pipe to the first outflow pipe using the first switching valve and fluidically connects the fourth downstream pipe to the second outflow pipe using the second switching valve, and closes the first, third, fifth, and seventh valves. The first control may correspond to a first processing step. The second control may correspond to a second processing step. In the first control, the control unit may open at least one of the first valve, the third valve, the fifth valve, and the seventh valve. In the second control, the control unit may open at least one of the second valve, the fourth valve, the sixth valve, and the eighth valve. In the first control or the second control, the first process gas or the second process gas may flow through a midstream pipe corresponding to a valve among the first to eighth valves that is opened by the control unit. In the first control, the first process gas may flow into the chamber via the first downstream pipe and the first outlet pipe and via the third downstream pipe and the second outlet pipe. In the second control, the second process gas may flow into the chamber via the second downstream pipe and the first outlet pipe and via the fourth downstream pipe and the second outlet pipe. In this case, switching between the first control and the second control, i.e., switching between the first process gas and the second process gas, can be performed quickly because the first and second switching valves are located near the chamber. This high-speed switching can be achieved at low cost because flow rate controllers are installed in the four upstream pipes instead of the eight midstream pipes.

[0022] The control unit may repeat a unit process including the first control and the second control multiple times. In this way, when the unit process is repeated multiple times, the process gas is repeatedly switched, so that the effects obtained by the gas supply device according to the present disclosure can be more effectively utilized. The first control may be control for depositing a protective film on the surface of the substrate, and the second control may be control for etching the surface of the substrate. In this case, by repeating the unit process multiple times, the so-called Bosch process can be performed.

[0023] (Plasma processing equipment) The plasma processing apparatus according to the present disclosure may be, for example, a plasma etching apparatus, a plasma cleaner, a plasma dicer, a plasma ashing apparatus, or a plasma CVD apparatus, and includes a chamber and the above-described gas supply apparatus.

[0024] The chamber is configured to perform plasma processing within it. The plasma processing may be, for example, plasma processing of a substrate. The chamber may have a base and a lid that can be opened and closed relative to the base. With the lid closed, the chamber may be depressurized by a depressurization mechanism (e.g., a vacuum pump). A process gas is supplied from a gas supply device into the depressurized chamber, and a high-frequency electromagnetic field is generated in the chamber by, for example, a high-frequency power source and at least one coil connected thereto, thereby generating plasma in the chamber, which may then plasma-process a substrate placed in the chamber.

[0025] The chamber may have multiple supply positions to which multiple outlet pipes are connected. For example, the chamber may have a first supply position on the horizontal center side and a second supply position on the horizontal outer periphery side. By providing multiple supply positions in this manner, the uniformity of plasma processing for a processing object (e.g., a substrate) placed in the chamber can be improved. For example, when plasma etching a substrate, the etching rate can be made uniform across the entire substrate.

[0026] In the plasma processing apparatus according to the present disclosure, the process gas is supplied into the chamber by the gas supply device. Therefore, when performing plasma processing while switching between multiple process gases, the process gas can be switched quickly. Furthermore, since the gas supply device only requires a small number of flow rate controllers, the manufacturing cost of the plasma processing apparatus can be reduced.

[0027] As described above, according to the present disclosure, by providing a switching unit near the chamber, high-speed switching of process gases can be achieved. Furthermore, according to the present disclosure, by reducing the number of required flow rate controllers, high-speed switching of process gases can be achieved at low cost.

[0028] An example of a gas supply apparatus and a plasma processing apparatus according to the present disclosure will be specifically described below with reference to the drawings. The components described above can be applied to the components of the example gas supply apparatus and plasma processing apparatus described below. The components of the example gas supply apparatus and plasma processing apparatus described below can be modified based on the above description. Furthermore, the matters described below may be applied to the above embodiment. Among the components of the example gas supply apparatus and plasma processing apparatus described below, components that are not essential to the gas supply apparatus and plasma processing apparatus according to the present disclosure may be omitted. Note that the diagrams shown below are schematic and do not accurately reflect the shapes and numbers of actual components.

[0029] 1, a plasma processing apparatus 10 of this embodiment includes a chamber 20 and a gas supply device 30. The plasma processing apparatus 10 of this embodiment is configured as a plasma etching apparatus, but is not limited to this.

[0030] The chamber 20 is where plasma processing is performed. The chamber 20 has a plurality of supply positions 21 to which a plurality of outlet pipes 38 (described below) provided in the gas supply device 30 are connected. The plurality of supply positions 21 include a first supply position 21a on the central side and a second supply position 21b on the outer periphery. The first supply position 21a and the second supply position 21b are each connected to an outlet pipe 38. The number of supply positions 21 may be one, or may be three or more. Although there are apparently four second supply positions 21b, when there are multiple supply positions of the same type, the multiple supply positions are collectively considered to be "one supply position."

[0031] The gas supply device 30 supplies a process gas to the chamber 20. The gas supply device 30 includes a plurality of (five in this example) supply source pipes 31, a plurality of (ten in this example) upstream pipes 32, a plurality of (ten in this example) flow rate controllers 33, a plurality of (twenty in this example) midstream pipes 34, a plurality of (twenty in this example) valves 35, a plurality of (four in this example) downstream pipes 36, a plurality of (two in this example) outlet pipes 38, and a control unit 39.

[0032] The plurality of supply source pipes 31 are connected to gas sources (not shown), and process gases (first to fifth process gases) supplied from the gas sources flow through the supply source pipes 31. The supply source pipes 31 include a first supply source pipe 31a through which the first process gas flows, a second supply source pipe 31b through which the second process gas flows, a third supply source pipe 31c through which the third process gas flows, a fourth supply source pipe 31d through which the fourth process gas flows, and a fifth supply source pipe 31e through which the fifth process gas flows. The number of supply source pipes 31 may be four or less, or may be six or more.

[0033] For example, the first process gas may be C4F8, the second process gas may be SF6, the third process gas may be O2, the fourth process gas may be Ar, and the fifth process gas may be CF4. However, the type of each process gas may be set arbitrarily other than these.

[0034] The plurality of upstream pipes 32 branch off from the supply source pipe 31. The plurality of upstream pipes 32 correspond to the plurality of supply positions 21 in the chamber 20. The plurality of upstream pipes 32 include first to tenth upstream pipes 32a to 32j.

[0035] The first upstream pipe 32a branches off from the first supply source pipe 31a and corresponds to the first supply position 21a, and the second upstream pipe 32b branches off from the first supply source pipe 31a and corresponds to the second supply position 21b.

[0036] The third upstream pipe 32c branches off from the second supply source pipe 31b and corresponds to the first supply position 21a. The fourth upstream pipe 32d branches off from the second supply source pipe 31b and corresponds to the second supply position 21b.

[0037] The fifth upstream pipe 32e branches off from the third supply source pipe 31c and corresponds to the first supply position 21a, and the sixth upstream pipe 32f branches off from the third supply source pipe 31c and corresponds to the second supply position 21b.

[0038] The seventh upstream pipe 32g branches off from the fourth supply source pipe 31d and corresponds to the first supply position 21a, and the eighth upstream pipe 32h branches off from the fourth supply source pipe 31d and corresponds to the second supply position 21b.

[0039] The ninth upstream pipe 32i branches off from the fifth supply source pipe 31e and corresponds to the first supply position 21a, and the tenth upstream pipe 32j branches off from the fifth supply source pipe 31e and corresponds to the second supply position 21b.

[0040] A plurality of flow rate controllers 33 are provided in each upstream pipe 32. In this embodiment, the flow rate controller 33 is configured by an MFC, but is not limited to this. The plurality of flow rate controllers 33 include first to tenth flow rate controllers 33a to 33j.

[0041] The first flow rate controller 33a is provided in the first upstream pipe 32a and controls the flow rate of the first process gas flowing through the first upstream pipe 32a. The second flow rate controller 33b is provided in the second upstream pipe 32b and controls the flow rate of the first process gas flowing through the second upstream pipe 32b.

[0042] The third flow rate controller 33c is provided in the third upstream pipe 32c and controls the flow rate of the second process gas flowing through the third upstream pipe 32c. The fourth flow rate controller 33d is provided in the fourth upstream pipe 32d and controls the flow rate of the second process gas flowing through the fourth upstream pipe 32d.

[0043] The fifth flow rate controller 33e is provided in the fifth upstream pipe 32e and controls the flow rate of the third process gas flowing through the fifth upstream pipe 32e. The sixth flow rate controller 33f is provided in the sixth upstream pipe 32f and controls the flow rate of the third process gas flowing through the sixth upstream pipe 32f.

[0044] The seventh flow rate controller 33g is provided in the seventh upstream pipe 32g and controls the flow rate of the fourth process gas flowing through the seventh upstream pipe 32g. The eighth flow rate controller 33h is provided in the eighth upstream pipe 32h and controls the flow rate of the fourth process gas flowing through the eighth upstream pipe 32h.

[0045] The ninth flow rate controller 33i is provided in the ninth upstream pipe 32i and controls the flow rate of the fifth process gas flowing through the ninth upstream pipe 32i. The tenth flow rate controller 33j is provided in the tenth upstream pipe 32j and controls the flow rate of the fifth process gas flowing through the tenth upstream pipe 32j.

[0046] The multiple midstream pipes 34 branch off from the upstream pipe 32. The multiple midstream pipes 34 correspond to the multiple (in this example, two) processing steps performed in the chamber 20. The multiple midstream pipes 34 include first to twentieth midstream pipes 34a to 34t.

[0047] The first midstream pipe 34a branches off from the first upstream pipe 32a and corresponds to the first processing step, and the second midstream pipe 34b branches off from the first upstream pipe 32a and corresponds to the second processing step.

[0048] The third midstream pipe 34c branches off from the second upstream pipe 32b and corresponds to the first treatment step, and the fourth midstream pipe 34d branches off from the second upstream pipe 32b and corresponds to the second treatment step.

[0049] The fifth midstream pipe 34e branches off from the third upstream pipe 32c and corresponds to the first treatment step, and the sixth midstream pipe 34f branches off from the third upstream pipe 32c and corresponds to the second treatment step.

[0050] The seventh midstream pipe 34g branches off from the fourth upstream pipe 32d and corresponds to the first treatment step, and the eighth midstream pipe 34h branches off from the fourth upstream pipe 32d and corresponds to the second treatment step.

[0051] The ninth midstream pipe 34i branches off from the fifth upstream pipe 32e and corresponds to the first treatment step, and the tenth midstream pipe 34j branches off from the fifth upstream pipe 32e and corresponds to the second treatment step.

[0052] The eleventh midstream pipe 34k branches off from the sixth upstream pipe 32f and corresponds to the first treatment step. The twelfth midstream pipe 34l branches off from the sixth upstream pipe 32f and corresponds to the second treatment step.

[0053] The thirteenth midstream pipe 34m branches off from the seventh upstream pipe 32g and corresponds to the first treatment step. The fourteenth midstream pipe 34n branches off from the seventh upstream pipe 32g and corresponds to the second treatment step.

[0054] The fifteenth midstream pipe 34o branches off from the eighth upstream pipe 32h and corresponds to the first treatment step. The sixteenth midstream pipe 34p branches off from the eighth upstream pipe 32h and corresponds to the second treatment step.

[0055] The seventeenth midstream pipe 34q branches off from the ninth upstream pipe 32i and corresponds to the first treatment step. The eighteenth midstream pipe 34r branches off from the ninth upstream pipe 32i and corresponds to the second treatment step.

[0056] The 19th midstream pipe 34s branches off from the 10th upstream pipe 32j and corresponds to the first treatment step. The 20th midstream pipe 34t branches off from the 10th upstream pipe 32j and corresponds to the second treatment step.

[0057] A plurality of valves 35 are provided in each midstream pipe 34. The valves 35 in this embodiment are configured as solenoid valves that can be opened and closed, but are not limited to this. The plurality of valves 35 include first to twentieth valves 35a to 35t.

[0058] The first valve 35a is provided in the first midstream piping 34a and allows or prohibits the flow of the first process gas through the first midstream piping 34a. The second valve 35b is provided in the second midstream piping 34b and allows or prohibits the flow of the first process gas through the second midstream piping 34b. The third valve 35c is provided in the third midstream piping 34c and allows or prohibits the flow of the first process gas through the third midstream piping 34c. The fourth valve 35d is provided in the fourth midstream piping 34d and allows or prohibits the flow of the first process gas through the fourth midstream piping 34d.

[0059] The fifth valve 35e is provided in the fifth midstream piping 34e and allows or prohibits the flow of the second process gas in the fifth midstream piping 34e. The sixth valve 35f is provided in the sixth midstream piping 34f and allows or prohibits the flow of the second process gas in the sixth midstream piping 34f. The seventh valve 35g is provided in the seventh midstream piping 34g and allows or prohibits the flow of the second process gas in the seventh midstream piping 34g. The eighth valve 35h is provided in the eighth midstream piping 34h and allows or prohibits the flow of the second process gas in the eighth midstream piping 34h.

[0060] The ninth valve 35i is provided on the ninth midstream pipe 34i and allows or prohibits the flow of the third process gas through the ninth midstream pipe 34i. The tenth valve 35j is provided on the tenth midstream pipe 34j and allows or prohibits the flow of the third process gas through the tenth midstream pipe 34j. The eleventh valve 35k is provided on the eleventh midstream pipe 34k and allows or prohibits the flow of the third process gas through the eleventh midstream pipe 34k. The twelfth valve 35l is provided on the twelfth midstream pipe 34l and allows or prohibits the flow of the third process gas through the twelfth midstream pipe 34l.

[0061] The thirteenth valve 35m is provided on the thirteenth midstream pipe 34m and allows or prohibits the flow of the fourth process gas through the thirteenth midstream pipe 34m. The fourteenth valve 35n is provided on the fourteenth midstream pipe 34n and allows or prohibits the flow of the fourth process gas through the fourteenth midstream pipe 34n. The fifteenth valve 35o is provided on the fifteenth midstream pipe 34o and allows or prohibits the flow of the fourth process gas through the fifteenth midstream pipe 34o. The sixteenth valve 35p is provided on the sixteenth midstream pipe 34p and allows or prohibits the flow of the fourth process gas through the sixteenth midstream pipe 34p.

[0062] The seventeenth valve 35q is provided in the seventeenth midstream pipe 34q and allows or prohibits the flow of the fifth process gas in the seventeenth midstream pipe 34q. The eighteenth valve 35r is provided in the eighteenth midstream pipe 34r and allows or prohibits the flow of the fifth process gas in the eighteenth midstream pipe 34r. The nineteenth valve 35s is provided in the nineteenth midstream pipe 34s and allows or prohibits the flow of the fifth process gas in the nineteenth midstream pipe 34s. The twentieth valve 35t is provided in the twentieth midstream pipe 34t and allows or prohibits the flow of the fifth process gas in the tenth midstream pipe 34t.

[0063] The plurality of downstream pipes 36 join with midstream pipes 34 corresponding to the same supply position 21 and the same processing step. The plurality of downstream pipes 36 include first to fourth downstream pipes 36a to 36d.

[0064] The first downstream pipe 36a is where the first midstream pipe 34a, the fifth midstream pipe 34e, the ninth midstream pipe 34i, the thirteenth midstream pipe 34m, and the seventeenth midstream pipe 34q converge. Any combination of the first to fifth process gases can flow through the first downstream pipe 36a.

[0065] The second downstream pipe 36b is where the second midstream pipe 34b, the sixth midstream pipe 34f, the tenth midstream pipe 34j, the fourteenth midstream pipe 34n, and the eighteenth midstream pipe 34r converge. Any combination of the first to fifth process gases can flow through the second downstream pipe 36b.

[0066] The third downstream pipe 36c is where the third midstream pipe 34c, the seventh midstream pipe 34g, the eleventh midstream pipe 34k, the fifteenth midstream pipe 34o, and the nineteenth midstream pipe 34s converge. Any combination of the first to fifth process gases can flow through the third downstream pipe 36c.

[0067] The fourth downstream pipe 36d is where the fourth midstream pipe 34d, the eighth midstream pipe 34h, the twelfth midstream pipe 34l, the sixteenth midstream pipe 34p, and the twentieth midstream pipe 34t converge. Any combination of the first to fifth process gases can flow through the fourth downstream pipe 36d.

[0068] The plurality of outlet pipes 38 are connected to downstream pipes 36 corresponding to the same supply position 21 via switching units 37 (first switching unit 37a or second switching unit 37b). Each of the plurality of outlet pipes 38 is connected to one supply position 21. The plurality of outlet pipes 38 have a first outlet pipe 38a and a second outlet pipe 38b.

[0069] The first outlet pipe 38a is connected to the first downstream pipe 36a and the second downstream pipe 36b via a first switching unit 37a, and is connected to the first supply position 21a. The first switching unit 37a is configured with a first switching valve 37a that exclusively fluidly connects one of the first downstream pipe 36a and the second downstream pipe 36b to the first outlet pipe 38a.

[0070] The second outlet pipe 38b is connected to the third downstream pipe 36c and the fourth downstream pipe 36d via a second switching unit 37b, and is also connected to the second supply position 21b. In this embodiment, the second outlet pipe 38b branches into four parts, each of which connects to the second supply position 21b, but this is not limited to this. The second switching unit 37b is configured with a second switching valve 37b that exclusively fluidly connects one of the third downstream pipe 36c and the fourth downstream pipe 36d to the second outlet pipe 38b.

[0071] The control unit 39 controls the switching unit 37 so that the downstream pipe 36, which is in fluid communication with the plurality of outlet pipes 38, is switched depending on the processing step. The control unit 39 executes a first control shown in FIG. 2 (i.e., a first control corresponding to a first processing step) and a second control shown in FIG. 3 (i.e., a second control corresponding to a second processing step). In FIGS. 2 and 3, the flow of the process gas is indicated by a thick solid line and arrows. The control unit 39 may be incorporated into a control device (not shown) included in the plasma processing apparatus 10, or may be configured separately from the control device.

[0072] In the first control of this embodiment, the control unit 39 fluidly connects the first downstream pipe 36a and the first outlet pipe 38a using the first switching valve 37a, and fluidly connects the third downstream pipe 36c and the second outlet pipe 38b using the second switching valve 37b. In the first control of this embodiment, the control unit 39 opens the first valve 35a and the third valve 35c, while closing the second valve 35b and the fourth to twentieth valves 35d to 35t. In the first control of this embodiment, the control unit 39 controls the aperture of the first flow rate controller 33a and the second flow rate controller 33b, while closing the third to tenth flow rate controllers 33c to 33j.

[0073] In the first control of this embodiment, the first process gas (C4F8 in this example) flows through the first supply source piping 31a, the first upstream piping 32a, the first midstream piping 34a, the first downstream piping 36a, and the first outlet piping 38a in this order, and then flows out to the first supply position 21a of the chamber 20. Also, in the first control of this embodiment, the first process gas flows through the first supply source piping 31a, the second upstream piping 32b, the third midstream piping 34c, the third downstream piping 36c, and the second outlet piping 38b in this order, and then flows out to the second supply position 21b of the chamber 20. That is, in the first control of this embodiment, the first process gas is supplied to the chamber 20 by the gas supply device 30.

[0074] In the second control of this embodiment, the control unit 39 fluidly connects the second downstream pipe 36b and the first outlet pipe 38a via the first selector valve 37a, and fluidly connects the fourth downstream pipe 36d and the second outlet pipe 38b via the second selector valve 37b. In the second control of this embodiment, the control unit 39 opens the sixth valve 35f, the eighth valve 35h, the tenth valve 35j, and the twelfth valve 35l, while closing the first to fifth valves 35a to 35e, the seventh valve 35g, the ninth valve 35i, the eleventh valve 35k, and the thirteenth to twentieth valves 35m to 35t. In the second control of this embodiment, the control unit 39 controls the apertures of the third to sixth flow rate controllers 33c to 33f, while closing the first and second flow rate controllers 33a and 33b and the seventh to tenth flow rate controllers 33g to 33j.

[0075] In the second control of this embodiment, the second process gas (SF in this example) flows through the second supply source piping 31b, the third upstream piping 32c, the sixth midstream piping 34f, the second downstream piping 36b, and the first outlet piping 38a in this order, and then flows out to the first supply position 21a of the chamber 20. Also, in the second control of this embodiment, the second process gas flows through the second supply source piping 31b, the fourth upstream piping 32d, the eighth midstream piping 34h, the fourth downstream piping 36d, and the second outlet piping 38b in this order, and then flows out to the second supply position 21a of the chamber 20. Furthermore, in the second control of this embodiment, the third process gas (O in this example) flows through the third supply source piping 31c, the fifth upstream piping 32e, the tenth midstream piping 34j, the second downstream piping 36b, and the first outlet piping 38a in this order, and then flows out to the first supply position 21a of the chamber 20. In the second control of this embodiment, the third process gas flows through the third supply source pipe 31c, the sixth upstream pipe 32f, the twelfth midstream pipe 34l, the fourth downstream pipe 36d, and the second outlet pipe 38b in this order, and then flows out to the second supply position 21b of the chamber 20. That is, in the second control of this embodiment, the gas supply device 30 supplies a mixed gas of the second process gas and the third process gas to the chamber 20.

[0076] In this embodiment, the control unit 39 repeats a unit process including the first control and the second control multiple times. For example, the first process and the second control may be alternately performed multiple times. This allows a plasma etching process using the Bosch process to be performed on a substrate (not shown) placed in the chamber 20. When switching between the first control and the second control, the connection states of the first switching valve 37a and the second switching valve 37b are switched. At this time, because both switching valves 37a and 37b are located near the chamber 20, only a small amount of process gas remains between the switching valves 37a and 37b and the chamber 20 (i.e., the first or second outflow pipe 38a or 38b). Therefore, when switching between the first control and the second control, the process gas supplied to the chamber 20 before the switching and the process gas supplied to the chamber 20 after the switching are hardly mixed, thereby enabling high-speed switching of the process gas. The number of times the control unit 39 repeats the unit process is not particularly limited.

[0077] <<Notes>> The above description of the embodiments discloses the following techniques. (Technology 1) a plurality of supply pipes through which process gases flow; a plurality of upstream pipes branching from the supply pipe and corresponding to a plurality of supply positions within the chamber; a plurality of flow rate controllers provided in the upstream pipes; a plurality of midstream pipes branching from the upstream pipe and corresponding to a plurality of processing steps performed in the chamber; A plurality of valves provided in each of the midstream pipes; a plurality of downstream pipes where the midstream pipes corresponding to the same supply position and the same processing step join together; a plurality of outlet pipes connected to the downstream pipes corresponding to the same supply position via switching units, each of the outlet pipes connecting to one of the supply positions; a control unit that controls the switching unit so that the downstream pipes fluidly communicating with the plurality of outflow pipes are switched according to the processing step; A gas supply device comprising: (Technology 2) The plurality of supply line a first supply source pipe through which a first process gas flows; a second supply source pipe through which a second process gas flows; and The plurality of upstream pipes include: a first upstream pipe branching from the first supply source pipe and corresponding to a first supply position and a second upstream pipe branching from the first supply source pipe and corresponding to a second supply position; a third upstream pipe branching from the second supply source pipe and corresponding to the first supply position and a fourth upstream pipe branching from the second supply source pipe and corresponding to the second supply position; and The plurality of flow controllers include: a first flow rate controller provided in the first upstream pipe; a second flow rate controller provided in the second upstream pipe; a third flow rate controller provided in the third upstream pipe; a fourth flow rate controller provided in the fourth upstream pipe; and The plurality of midstream pipes include: a first midstream pipe corresponding to a first treatment step and a second midstream pipe corresponding to a second treatment step, which are branched from the first upstream pipe; a third midstream pipe branching from the second upstream pipe and corresponding to the first treatment step and a fourth midstream pipe branching from the second upstream pipe and corresponding to the second treatment step; a fifth midstream pipe branching from the third upstream pipe and corresponding to the first treatment step and a sixth midstream pipe branching from the third upstream pipe and corresponding to the second treatment step; a seventh midstream pipe branching from the fourth upstream pipe and corresponding to the first treatment step and an eighth midstream pipe branching from the fourth upstream pipe and corresponding to the second treatment step; and The plurality of valves are a first valve provided in the first midstream pipe; a second valve provided in the second midstream pipe; a third valve provided in the third midstream pipe; a fourth valve provided in the fourth midstream pipe; a fifth valve provided in the fifth midstream pipe; a sixth valve provided in the sixth midstream pipe; a seventh valve provided in the seventh midstream pipe; an eighth valve provided in the eighth midstream pipe; and The plurality of downstream pipes include: a first downstream pipe where the first midstream pipe and the fifth midstream pipe join; a second downstream pipe where the second midstream pipe and the sixth midstream pipe join; a third downstream pipe where the third midstream pipe and the seventh midstream pipe join; a fourth downstream pipe where the fourth midstream pipe and the eighth midstream pipe join; and The plurality of outflow pipes include: a first outlet pipe connected to the first downstream pipe and the second downstream pipe via a first switching unit and connected to the first supply position; a second outlet pipe connected to the third downstream pipe and the fourth downstream pipe via a second switching unit and connected to the second supply position; and the first switching unit is configured with a first switching valve that exclusively fluidly connects one of the first downstream pipe and the second downstream pipe to the first outflow pipe; the second switching unit is configured with a second switching valve that exclusively fluidly connects one of the third downstream pipe and the fourth downstream pipe to the second outflow pipe, The control unit a first control that fluidly connects the first downstream pipe and the first outflow pipe by the first switching valve, and fluidly connects the third downstream pipe and the second outflow pipe by the second switching valve, and closes the second valve, the fourth valve, the sixth valve, and the eighth valve; a second control that fluidly connects the second downstream pipe and the first outflow pipe by the first switching valve and fluidly connects the fourth downstream pipe and the second outflow pipe by the second switching valve, and closes the first valve, the third valve, the fifth valve, and the seventh valve; Execute the gas supply device described in technique 1. (Technology 3) The gas supply device according to technique 2, wherein the control unit repeats a unit process including the first control and the second control multiple times. (Technology 4) a chamber in which plasma processing takes place; a gas supply device according to any one of techniques 1 to 3 for supplying a process gas to the chamber; A plasma processing apparatus comprising: [Industrial Applicability]

[0078] The present disclosure can be used in gas supply devices and plasma processing devices. [Explanation of symbols]

[0079] 10: Plasma processing equipment 20: Chamber 21: Supply position 21a, 21b: first and second supply positions 30: Gas supply device 31: Supply source piping 31a~31e: 1st~5th supply source piping 32: Upstream piping 32a~32j: 1st~10th upstream piping 33: Flow controller 33a to 33j: 1st to 10th flow rate controllers 34: Midstream piping 34a~34t: 1st~20th midstream piping 35: Valve 35a~35t: 1st~20th valves 36: Downstream piping 36a to 36d: 1st to 4th downstream piping 37: Switching section 37a: First switching unit (first switching valve) 37b: Second switching unit (second switching valve) 38: Outlet pipe 38a, 38b: First and second outflow pipes 39: Control unit

Claims

1. a plurality of supply pipes through which process gases flow; a plurality of upstream pipes branching from the supply pipe and corresponding to a plurality of supply positions within the chamber; a plurality of flow rate controllers provided in the upstream pipes; a plurality of midstream pipes branching from the upstream pipe and corresponding to a plurality of processing steps performed in the chamber; A plurality of valves provided in each of the midstream pipes; a plurality of downstream pipes where the midstream pipes corresponding to the same supply position and the same processing step join together; a plurality of outlet pipes connected to the downstream pipes corresponding to the same supply position via switching units, each of the outlet pipes connecting to one of the supply positions; a control unit that controls the switching unit so that the downstream pipes fluidly communicating with the plurality of outflow pipes are switched according to the processing step; A gas supply device comprising:

2. The plurality of supply line a first supply line through which a first process gas flows; a second supply line through which a second process gas flows; and The plurality of upstream pipes include: a first upstream pipe branching from the first supply source pipe and corresponding to a first supply position and a second upstream pipe branching from the first supply source pipe and corresponding to a second supply position; a third upstream pipe branching from the second supply source pipe and corresponding to the first supply position and a fourth upstream pipe branching from the second supply source pipe and corresponding to the second supply position; and The plurality of flow controllers include: a first flow rate controller provided in the first upstream pipe; a second flow rate controller provided in the second upstream pipe; a third flow rate controller provided in the third upstream pipe; a fourth flow rate controller provided in the fourth upstream pipe; and The plurality of midstream pipes include: a first midstream pipe branching from the first upstream pipe and corresponding to a first treatment step and a second midstream pipe branching from the first upstream pipe and corresponding to a second treatment step; a third midstream pipe branching from the second upstream pipe and corresponding to the first treatment step and a fourth midstream pipe branching from the second upstream pipe and corresponding to the second treatment step; a fifth midstream pipe branching from the third upstream pipe and corresponding to the first treatment step and a sixth midstream pipe branching from the third upstream pipe and corresponding to the second treatment step; a seventh midstream pipe branching from the fourth upstream pipe and corresponding to the first treatment step and an eighth midstream pipe branching from the fourth upstream pipe and corresponding to the second treatment step; and The plurality of valves are a first valve provided in the first midstream piping; a second valve provided in the second midstream pipe; a third valve provided in the third midstream pipe; a fourth valve provided in the fourth midstream pipe; a fifth valve provided in the fifth midstream pipe; a sixth valve provided in the sixth midstream pipe; a seventh valve provided in the seventh midstream pipe; an eighth valve provided in the eighth midstream pipe; and The plurality of downstream pipes include: a first downstream pipe where the first midstream pipe and the fifth midstream pipe join; a second downstream pipe where the second midstream pipe and the sixth midstream pipe join; a third downstream pipe where the third midstream pipe and the seventh midstream pipe join; a fourth downstream pipe where the fourth midstream pipe and the eighth midstream pipe join; and The plurality of outflow pipes include: a first outlet pipe connected to the first downstream pipe and the second downstream pipe via a first switching unit and connected to the first supply position; a second outlet pipe connected to the third downstream pipe and the fourth downstream pipe via a second switching unit and connected to the second supply position; and the first switching unit is configured by a first switching valve that exclusively fluidly connects one of the first downstream pipe and the second downstream pipe to the first outflow pipe, the second switching unit is configured by a second switching valve that exclusively fluidly connects one of the third downstream pipe and the fourth downstream pipe to the second outflow pipe, The control unit a first control that fluidly connects the first downstream pipe and the first outflow pipe by the first switching valve, and fluidly connects the third downstream pipe and the second outflow pipe by the second switching valve, and closes the second valve, the fourth valve, the sixth valve, and the eighth valve; a second control that fluidly connects the second downstream pipe and the first outflow pipe by the first switching valve and fluidly connects the fourth downstream pipe and the second outflow pipe by the second switching valve, and closes the first valve, the third valve, the fifth valve, and the seventh valve; The gas supply device according to claim 1 ,

3. The gas supply device according to claim 2 , wherein the control unit repeats a unit process including the first control and the second control a plurality of times.

4. a chamber in which plasma processing takes place; a gas supply device according to any one of claims 1 to 3 for supplying a process gas to the chamber; A plasma processing apparatus comprising:

Images