X-ray reflection analysis system applying multiple x-ray beams

Abstract

To provide an X-ray reflection analysis system that can apply multiple X-ray beams and improve the speed of multipoint measurements.SOLUTION: An X-ray reflection analysis system 1 applying multiple X-ray beams that includes at least one X-ray source device 10, a diffraction component 12, at least one sensor 14, and a processing device 16 is disclosed. At least one X-ray source device is configured to generate a primary X-ray beam Lx0. The diffraction component is configured to split the primary X-ray beam into a plurality of sub X-ray beams Lx1 in a matrix form. The at least one sensor is used to acquire a plurality of sensor signals respectively generated after a to-be-measured object is irradiated by the sub X-ray beams. The processing device is configured to control the X-ray source device to generate the primary X-ray beam and to analyze the plurality of sensor signals to generate a plurality of analysis results.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a system, and in particular to an X-ray reflectometry system applying multiple X-ray beams. [Background technology]

[0002] In conventional X-ray measurement systems, when measuring a small area on a test sample, the obtained signal is very weak, so a long integration time is required to obtain analyzable data. For example, if it is necessary to obtain measurement results for small areas at multiple different locations on the sample, the cumulative total measurement time becomes very long.

[0003] Furthermore, when performing multi-point measurements, it is necessary to move the sample using a powered mechanism or rotate the light source to the desired measurement position of the microscopic area. However, mechanical movements take time, introduce uncertainty into optical measurements, and affect measurement accuracy. Due to these disadvantageous factors, conventional X-ray measurement systems require a long measurement time, which affects measurement efficiency and accuracy. Summary of the Invention [Problem to be solved by the invention]

[0004] The technical problem to be solved by the present invention is to provide an X-ray reflectometry system that applies multiple X-ray beams to address the shortcomings of the prior art, thereby improving the speed of multi-point measurements. [Means for solving the problem]

[0005] In order to solve the above-mentioned technical problems, one technical means adopted by the present invention provides an X-ray reflectance analysis system using multiple X-ray beams. The X-ray reflectance analysis system using multiple X-ray beams includes at least one X-ray source device, a diffraction element, at least one sensor, and a processing device. The at least one X-ray source device is used to generate a main X-ray beam. The diffraction element is used to split the main X-ray beam into a plurality of sub-X-ray beams in a matrix format. The at least one sensor is used to acquire a plurality of sensor signals generated after the measurement object is irradiated with these sub-X-ray beams. The processing device is configured to control the X-ray source device to generate the main X-ray beam and analyze the sensor signals to generate a plurality of analysis results.

[0006] One of the beneficial effects of the present invention is that the X-ray reflectivity analysis system using multiple X-ray beams provided by the present invention is able to simultaneously measure sensor signals generated from multiple microscopic areas by designing a diffraction element with a special microstructure and combining it with a corresponding two-dimensional sensor, thereby effectively shortening the overall measurement time.

[0007] In order to further understand the features and technical contents of the present invention, please refer to the following detailed description of the present invention and the drawings, but the drawings provided are for reference and illustration purposes only and are not used to limit the present invention. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic diagram of an X-ray reflectometry system applying multiple X-ray beams according to a first embodiment of the present invention. [Figure 2] 3A to 3C are schematic diagrams illustrating the operation of the diffraction element according to the first embodiment of the present invention. [Figure 3] 1 is a plan view of a diffraction element according to a first embodiment of the present invention. [Figure 4] FIG. 4 is a curve diagram showing the relationship between period size and scattering angle according to the first embodiment of the present invention. [Figure 5]FIG. 1 is a plan view of a second-order diffraction element according to a first embodiment of the present invention. [Figure 6] FIG. 2 is a perspective view of a second-order diffraction element according to a first embodiment of the present invention. [Figure 7] FIG. 2 is a plan view of a fourth-order diffraction element according to the first embodiment of the present invention. [Figure 8] 1 is a perspective view of a fourth-order diffraction element according to a first embodiment of the present invention. [Figure 9] FIG. 2 is a plan view of an eighth-order diffraction element according to the first embodiment of the present invention. [Figure 10] FIG. 2 is a plan view of a 16th-order diffraction element according to the first embodiment of the present invention. [Figure 11] 4 is a curve diagram showing the uniformity and luminous efficiency of the second-order, fourth-order, eighth-order and sixteenth-order diffraction elements according to the first embodiment of the present invention; FIG. [Figure 12] FIG. 10 is a schematic diagram of an X-ray reflectometry system applying multiple X-ray beams according to a second embodiment of the present invention. [Figure 13] FIG. 10 is a schematic plan view of an X-ray reflectometry system to which multiple X-ray beams are applied according to a third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0009] The following describes the embodiments of the "X-ray reflectometry system using multiple X-ray beams" disclosed in the present invention through specific examples. Those skilled in the art can understand the advantages and effects of the present invention from the disclosed content. The present invention can be implemented or applied through other different specific embodiments, and various detailed descriptions herein can be modified and changed in various ways based on different perspectives and applications without departing from the spirit of the present invention. It should be noted that the drawings of the present invention are merely schematic and are not drawn to actual scale. The following embodiments will further explain the technical content of the present invention, but the disclosed content is not intended to limit the scope of protection of the present invention. Furthermore, the term "or" in this specification should be understood to include any one or more combinations of the related listed items, depending on the actual situation.

[0010] [First Example] Fig. 1 is a schematic diagram of an X-ray reflectance analysis system applying multiple X-ray beams according to a first embodiment of the present invention. As shown in Fig. 1, the first embodiment of the present invention provides an X-ray reflectance analysis system 1 including an X-ray source device 10, a diffraction element 12, a sensor 14, and a processing device 16. As an example, the X-ray reflectance analysis system 1 shown in Fig. 1 may be, for example, an X-ray critical dimension (XRCD) analysis system. Accordingly, the sensor 14 is a reflected light sensor.

[0011] As shown in FIG. 1, the X-ray source device 10 may include at least one X-ray generator 100 and one or more optical elements 102. The X-ray generator 100, the optical element 102, and the measurement object OBJ are arranged along an optical path OP. The X-ray source device 10 generates a primary X-ray beam Lx0 using the X-ray generator 100. In this embodiment, the primary X-ray beam Lx0 is primarily used for X-ray analysis techniques and may be, for example, a light beam in the wavelength range of 0.01 nanometers to 10 nanometers, and may include a hard X-ray beam, a soft X-ray beam, or a gamma ray beam. The X-ray generator 100 may include an X-ray tube with an electron beam emitter and a target material installed therein. The target material is irradiated by the electron beam to generate radiation. Additionally, X-ray beams of different energies or different energy wavelengths (or frequencies) may be generated by selecting different target materials, such as, for example, copper (Cu), aluminum (Al), iron (Fe), molybdenum (Mo), indium (In) and their related alloys.

[0012] To solve the problem of multi-point measurement, this embodiment employs a diffractive element 12 with a specific design. The diffractive element 12 is used to split the main X-ray beam Lx0 into multiple sub-X-ray beams Lx1. These sub-X-ray beams Lx1 may have a matrix form Mx. More precisely, when these sub-X-ray beams Lx1 are irradiated onto the surface of the measurement object OBJ, they can represent multiple light spots and the matrix form Mx arranged from these light spots, as shown in FIG. 1. It should be noted that, to meet the requirements of micro-area measurement, each light spot may utilize a reflector system consisting of multiple optical elements 102, such as a Kirkpatrick-Baez (KB) reflector group, for example, two physically separated elliptical reflectors, to focus the main X-ray beam Lx0 into a nanoscale-sized light spot and irradiate it onto the surface of the measurement object OBJ. The sensor 14 then receives a reflection signal from the surface. The size of the light spot irradiated onto the surface of the measurement object OBJ may also be determined by controlling the microstructure of the diffractive element 12. In this way, micro-area measurement results are achieved. Preferably, in this embodiment of the present invention, the area of ​​the light spot formed on the surface of the measurement object OBJ by these sub X-ray beams Lx1 is 2500 μm 2 and if the light spot is circular, its diameter does not exceed 50 μm.

[0013] 1, the diffractive element 12 is a designed optical element and may be placed between the X-ray source device 10 and the measurement object OBJ. However, the present invention is not limited thereto. In other embodiments, the diffractive element 12 may be placed between any two of the X-ray generator 100, the optical element 102, and the measurement object OBJ, and may be located in the optical path OP.

[0014] The sensor 14 is used to acquire multiple sensor signals S1 generated after the measurement object OBJ is irradiated with these sub-X-ray beams Lx1. When these sub-X-ray beams Lx1 simultaneously irradiate the measurement object OBJ, the reflection spectra of multiple points can be measured simultaneously, thereby shortening the measurement time for the entire sample. The sensor 14 may be, for example, a photosensitive coupled device (CCD) or CMOS image sensor having a two-dimensional array format (as shown in FIG. 1), or may use multiple sensor units (e.g., silicon drift detectors (SDDs)) to simultaneously receive multiple reflection signals in a matrix format and generate multiple corresponding sensor signals S1.

[0015] The processing device 16 may be, for example, a computer system including a processor and memory, and may be configured to execute a stored instruction set or program code to control the X-ray source device 10 to generate the primary X-ray beam Lx0 and to analyze these sensor signals S1 to generate a plurality of analysis results.

[0016] In this embodiment, the processing device 16 can perform X-ray critical dimension (XRCD) analysis on the sensor signal generated by the sensor 14 (i.e., the reflected light sensor). For example, when these sub-X-ray beams Lx1 are incident on the surface of the measurement object OBJ, XRCD analysis can determine structural parameters of the measurement object OBJ. For example, if the measurement object OBJ includes a microelement (e.g., a gate-all-around field-effect transistor (GAA-FET)), XRCD analysis can determine the critical dimensions and orientation of the GAA-FET based on the reflection spectrum collected by the sensor. Furthermore, if the measurement object OBJ includes a multilayer structure, XRCD analysis can also determine the density, thickness, roughness, etc. of each layer based on the reflection spectrum collected by the sensor.

[0017] In an embodiment of the present invention, the processing unit 16 may perform a multi-model fitting process on the sensor signal S1 based on the target structure model, and generate multiple structural parameters corresponding to the target structure model as an analysis result. In the multi-model fitting process, a modeling fitting analysis may be performed on the measured reflection signal (i.e., the sensor signal S1).

[0018] For example, the processing device 16 may execute multiple electromagnetic wave calculation engines with different physical mechanisms to fit the measurement results. The measurement results may include, for example, reflection spectra obtained when incident on the measurement object OBJ at multiple different incident angles. The fitting results may include structural parameters of the measurement object OBJ, such as the critical dimensions of a GAA-FET. These electromagnetic wave calculation engines may include, for example, one or more of the following: a finite-difference time-domain (FDTD) algorithm, a distorted wave born approximation (DWBA) algorithm, a rigorous coupled wave analysis (RCWA) algorithm, a discrete dipole approximation (DDP) algorithm, and a boundary element method (BEM). When the fitting results are generated by these electromagnetic wave calculation engines, corresponding difference functions and fluctuation quantities can be obtained. After statistical processing of all data, an initial fitting range can be obtained. Within the range, different structural parameters of the verification object can be generated using random numbers and permutation combinations. By optimizing the structural parameters of the verification target through iterative verification and feedback, more preferable structural parameters obtained when achieving the optimization conditions can be used as the final fitting results.

[0019] Please refer to Figures 2 and 3. Figure 2 is a schematic diagram illustrating the operation of a diffraction element according to a first embodiment of the present invention. Figure 3 is a plan view of the diffraction element according to the first embodiment of the present invention. As shown in Figures 2 and 3, the diffraction element 12 has an incident surface 120 and includes a plurality of diffraction units DU periodically arranged along the incident surface 120. Furthermore, each diffraction unit DU has a first length Px in a first direction D1 and a second length Py in a second direction D2. Here, the incident surface 120 has a normal direction Dn, and the first direction D1, the second direction D2, and the normal direction Dn may be perpendicular to each other.

[0020] 2, the matrix format Mx includes a k×k matrix, where k is an odd number greater than or equal to 3. For example, the matrix format Mx may include a 3×3, 5×5, or 7×7 matrix. The sub-X-ray beams Lx1 include a central beam Lx1c, a sub-X-ray beam Lx1x closest to the central beam Lx1c in the first direction D1 has a first scattering angle θx, and a sub-X-ray beam Lx1y closest to the central beam Lx1c in the second direction D2 has a second scattering angle θy.

[0021] 4 is a curve diagram showing the relationship between pitch size and scattering angle according to a first embodiment of the present invention. As shown in FIG. 4, in the diffraction element 12, the pitch sizes in the first direction D1 and the second direction D2, i.e., the first length Px and the second length Py of a single diffraction unit DU, are determined by the desired first scattering angle θx and second scattering angle θy, respectively. In addition, the number of diffraction units DU in the first direction D1 and the second direction D2 is determined by the number of required light spots, i.e., the size of the matrix.

[0022] Meanwhile, in this embodiment, the first length Px and the second length Py can be determined based on the following equations (1) and (2).

[0023] P x =λ / sinθ x ...Formula (1)

[0024] P y =λ / sinθy …Formula (2)

[0025] where λ is the predetermined wavelength of the primary X-ray beam Lx0, and θ x is the first scattering angle, and θ y is the second scattering angle. As can be seen from the above equations (1) and (2), the first length Px and the second length Py are directly proportional to the predetermined wavelength λ of the primary X-ray beam Lx0, the first length Px is inversely proportional to a sine function of the first scattering angle θx, and the second length Py is inversely proportional to a sine function of the second scattering angle θy.

[0026] On the other hand, the diffraction element 12 is an m-th order diffraction element and includes m material layers 122 stacked on top of each other, and the height of the entire diffraction element 12 is determined by the refractive index of the material, as shown in the following equation (3), for example.

[0027] Htotal=λ / (n-1)...Equation (3)

[0028] Here, Htotal is the total height of the diffraction element 12, n is the refractive index of the material layer 122, and λ is the predetermined wavelength of the main X-ray beam Lx0. Therefore, the height of each material layer 122 is expressed by the following equation (4).

[0029] Hm=λ / m×(n-1)…Equation (4)

[0030] where Hm is the height of each material layer 122, m is an integer equal to or greater than 2, n is the refractive index of each material layer 122, and λ is the predetermined wavelength of the primary X-ray beam Lx0. Each material layer 122 may be made of a high-density metallic material having a reflectivity of greater than 95% at the predetermined wavelength, such as gold (Au), platinum (Pt), or silver (Ag).

[0031] 5 and 6 are plan and perspective views, respectively, of a second-order diffraction element according to a first embodiment of the present invention. Further, refer to FIGS. 5 and 6. When k is 5 (i.e., when generating a 5×5 matrix of light spots) and m is 2, each diffraction unit DU has a rectangular shape in plan view and includes a first material layer L1 and a second material layer L2. As shown in FIG. 6, the first material layer L1 is located above the second material layer L2. The first material layer L1 includes four recesses R1, R2, R3, and R4 with different cross-sectional areas, which are located at the four corners of the rectangle and expose the top surface of the second material layer L2. Here, the cross-sectional areas of the recesses R1, R2, R3, and R4 increase in order, with the recesses R1 and R2 having an approximately hill shape, the recess R3 having an approximately heart shape, and the recess R4 having an approximately C shape. The recesses R1 and R3 are located at two diagonal corners, and the recesses R2 and R4 are located at the other two diagonal corners.

[0032] 7 and 8 are plan and perspective views, respectively, of a fourth-order diffraction element according to a first embodiment of the present invention. When k is 5 (i.e., when generating a 5×5 matrix of light spots) and m is 4, each diffraction unit DU has a rectangular shape in plan view and includes a first material layer L1, a second material layer L2, a third material layer L3, and a fourth material layer L4 stacked in that order. Furthermore, in each diffraction unit DU, three first regions A1, six second regions A2, five third regions A3, and five fourth regions A4 are formed from high to low. The first region A1 corresponds to the upper cross section of the first material layer L1, the second region A2 corresponds to the uncovered upper cross section of the second material layer L2, the third region A3 corresponds to the uncovered upper cross section of the third material layer L3, and the fourth region A4 corresponds to the uncovered upper cross section of the second material layer L2.

[0033] 9 and 10 are plan views of an 8th-order diffraction element and a 16th-order diffraction element, respectively, according to a first embodiment of the present invention. It should be noted that the 8th-order diffraction element (m=8) in FIG. 9 and the 16th-order diffraction element (m=16) in FIG. 10 may be used to generate a 5×5 matrix of light spots (i.e., k=5). For convenience of explanation, the three-dimensional shapes of each material layer in the 8th-order diffraction element and the 16th-order diffraction element are omitted. Here, as shown in FIG. 9, the 8th-order diffraction element has eight material layers, and therefore has eight color blocks of different depths, which are used to respectively represent the uncovered areas in the eight material layers. Similarly, as shown in FIG. 10, the 16th-order diffraction element has sixteen material layers, and therefore has sixteen color blocks of different depths, which are used to respectively represent the uncovered areas in the sixteen material layers.

[0034] Please refer to FIG. 11. FIG. 11 is a curve diagram showing the uniformity and luminous efficiency of the second-, fourth-, eighth-, and sixteenth-order diffraction elements according to the first embodiment of the present invention. As shown in FIG. 11, as the order of the diffraction element 12 increases, the uniformity and spectral efficiency also increase. Here, uniformity refers to the energy difference between each sub-X-ray beam Lx1. Spectral efficiency refers to the ratio of the total energy that can reliably reach the measurement object OBJ to the incident energy of the main X-ray beam Lx0 when the diffraction element 12 splits the main X-ray beam Lx0 into multiple sub-X-ray beams Lx1. For example, as can be seen from FIG. 11, the 16th-order diffraction element can effectively control the total energy that reaches the measurement object OBJ to more than 80% of the incident energy, thereby reducing energy loss during the spectroscopic process.

[0035] Therefore, by using a diffraction element 12 having a special microstructure and combining it with a corresponding two-dimensional sensor 14, it becomes possible to simultaneously measure sensor signals generated in multiple microscopic areas, effectively shortening the overall measurement time. Furthermore, when performing multi-point measurement, there is no need to move the measurement object OBJ via a powered mechanism or rotate the X-ray source device 10 to the measurement position of the desired microscopic area to perform the measurement. This not only reduces the time required for mechanical operation, but also eliminates the uncertainty that may be introduced into optical measurement during operation. This improves measurement accuracy.

[0036] [Second Example] 12 is a schematic diagram of an X-ray reflectometry system 2 applying multiple X-ray beams according to a second embodiment of the present invention. As shown in FIG. 12, the second embodiment of the present invention provides an X-ray reflectometry system 2 including an X-ray source device 20, a diffraction element 22, a sensor 24, and a processing device 26. As an example, the X-ray reflectometry system 2 shown in FIG. 12 is an X-ray diffraction (XRD) analysis system. Accordingly, the sensor 24 is a diffracted light sensor.

[0037] The X-ray source device 20 may include an X-ray generator 200 and optical elements 202-1 and 202-2. The optical element 202-1 may be, for example, a KB reflecting mirror group for focusing. The optical element 202-2 may be, for example, a collimating lens. The X-ray generator 200, the optical elements 202-1 and 202-2, and the measurement object OBJ are installed along an optical path OP. The X-ray source device 20 generates a main X-ray beam Lx0′ using the X-ray generator 200.

[0038] Similarly, to solve the problem of multi-point measurement, this embodiment employs a diffractive element 22 with a specific design. The diffractive element 22 is used to split the main X-ray beam Lx0′ into multiple sub-X-ray beams Lx1′. When these sub-X-ray beams Lx1′ are irradiated onto the surface of the measurement object OBJ, they can represent multiple light spots and a matrix form Mx arranged from these light spots, as shown in FIG. 12. The main X-ray beam Lx0′ may be focused into a nanoscale-sized light spot via optical elements 202-1 and 202-2 and irradiated onto the surface of the measurement object OBJ. Then, multiple sensors 24 receive transmission signals. The size of the light spot irradiated onto the surface of the measurement object OBJ may be determined by controlling the microstructure of the diffractive element 22. In this way, measurement results for a small area can be achieved.

[0039] 12, the diffractive element 22 employs a microstructure similar to that of the diffractive element 12 of the first embodiment, and may be, for example, the aforementioned second-order, fourth-order, eighth-order, and sixteenth-order diffractive elements. The diffractive element 22 may be installed between the X-ray source device 20 and the measurement object OBJ. However, the present invention is not limited thereto. In other embodiments, the diffractive element 22 may be installed between any two of the X-ray generator 200, the optical elements 202-1 and 202-2, and the measurement object OBJ, and may be located in the optical path OP.

[0040] In this embodiment, the number of sensors 24 is plural, and at least some of these sensors are arranged to correspond to the matrix format Mx. These sensors 24 may be used to acquire multiple sensor signals S2 generated after the measurement object OBJ is irradiated with these sub-X-ray beams Lx1′.

[0041] More specifically, in an X-ray diffraction (XRD) analysis system, after the measurement object OBJ is irradiated with these sub-X-ray beams Lx1′, the diffraction signal (i.e., the received sensor signal S2) generated for the sub-X-ray beams Lx1′ incident at a specific incident angle (e.g., Bragg angle) may be used for X-ray diffraction analysis. For example, the XRD analysis can be used to determine the crystal structure, lattice constant, strain, etc. of the measurement object OBJ. Furthermore, the details of the XRD analysis are similar to the multi-model fitting process of the first embodiment, and the processing device 16 may execute multiple electromagnetic wave calculation engines with different physical mechanisms to fit the measurement results. In this way, multiple structural parameters of the corresponding target structure model are generated as analysis results.

[0042] Therefore, by using a diffraction element 22 having a special microstructure and combining it with multiple sensors 24 arranged in a matrix, it becomes possible to simultaneously measure sensor signals generated in multiple microscopic areas, effectively shortening the overall measurement time. Furthermore, when performing multi-point measurement, there is no need to move the measurement object OBJ via a powered mechanism or rotate the X-ray source device 20 to the measurement position of the desired microscopic area to perform the measurement. This not only reduces the time required for mechanical operation, but also eliminates the uncertainty that may be introduced into optical measurement during operation. This improves measurement accuracy.

[0043] [Third Example] 13 is a schematic plan view of an X-ray reflectance analysis system using multiple X-ray beams according to a third embodiment of the present invention. As shown in FIG. 13, the third embodiment of the present invention provides an X-ray reflectance analysis system 3 including X-ray source devices 30-1, 30-2, 30-3, and 30-4, a plurality of diffraction elements 32, a plurality of sensors 34-1, 34-2, 34-3, and 34-4, a processing device 36, and a measurement platform 38 for placing a measurement object OBJ. For example, the X-ray reflectance analysis system 3 shown in FIG. 13 is an integrated X-ray analysis system and may include one or more of an X-ray critical dimension (XRCD) analysis system, an X-ray diffraction (XRD) analysis system, a small-angle X-ray scattering (SAXS) analysis system, and an X-ray fluorescence (XRF) analysis system. The processing device 36 may control the power mechanism of the measurement platform 38 to rotate it so that the measurement object OBJ can receive the sub-X-ray beams incident at a predetermined incident angle.

[0044] Furthermore, each of the sensors 34-1, 34-2, 34-3, and 34-4 may be, for example, a reflected light sensor, a diffracted light sensor, a scattered light sensor, or a fluorescent sensor. Each of the X-ray source devices 30-1, 30-2, 30-3, and 30-4 may include an X-ray generator and one or more optical elements and may be used to generate a primary X-ray beam.

[0045] Similarly, to solve the problem of multi-point measurement, this embodiment employs a plurality of diffraction elements 32 with a specific design. These diffraction elements 32 are used to split the main X-ray beam generated by the X-ray source devices 30-1, 30-2, 30-3, and 30-4 into a plurality of sub-X-ray beams, respectively. When these sub-X-ray beams are irradiated onto the surface of the measurement object OBJ, a matrix form Mx can be expressed.

[0046] 13, the diffraction element 32 employs a microstructure similar to that of the diffraction element 12 of the first embodiment, and may be, for example, the aforementioned second-order, fourth-order, eighth-order, or sixteenth-order diffraction element. The diffraction element 32 may be installed between the measurement object OBJ and the X-ray source device 30-1 / 30-2 / 30-3 / 30-4. However, the present invention is not limited to this.

[0047] In this embodiment, sensors 34-1, 34-2, 34-3, and 34-4 correspond to X-ray source devices 30-1, 30-2, 30-3, and 30-4, respectively, and may be used to acquire multiple sensor signals S3 generated after the measurement object OBJ is irradiated with the corresponding sub-X-ray beams.

[0048] When the X-ray reflectance analysis system 3 includes an XRCD analysis system and an XRD analysis system, the sensors 34-1, 34-2, 34-3, and 34-4 and the corresponding X-ray source devices 30-1, 30-2, 30-3, and 30-4 can be installed according to the configurations of the first and second embodiments, and detailed description thereof will be omitted here.

[0049] When the X-ray reflectance analysis system 3 includes a SAX analysis system, multiple sub-X-ray beams in a small angle incidence array format may be used so that the measurement object OBJ scatters these sub-X-ray beams, and one or more of the sensors 34-1, 34-2, 34-3, and 34-4 may be provided to receive the scattering signals to allow the processing device 36 to perform SAX analysis, thereby determining the size (e.g., critical dimension of GAA), height, width, etc. of the periodic structure of the measurement object OBJ.

[0050] If the X-ray reflectance analysis system 3 includes an XRF analysis system, the measurement object OBJ may be irradiated with multiple sub-X-ray beams in an array format. In this manner, the measurement object OBJ is excited by the X-rays and emits corresponding fluorescence. One or more of the sensors 34-1, 34-2, 34-3, and 34-4 are installed to receive the fluorescence signal and cause the processing device 36 to perform XRF analysis. Since the emitted fluorescence is related to the energy band of the measurement object OBJ, the material properties or elemental composition of the measurement object OBJ can be analyzed.

[0051] Therefore, by using a diffraction element 32 having a special microstructure and combining it with multiple sensors arranged in a matrix, it becomes possible to simultaneously measure sensor signals generated in multiple microscopic areas, effectively shortening the overall measurement time. Furthermore, when performing multi-point measurement, it is no longer necessary to move the measurement object OBJ via a power mechanism or to rotate the X-ray source device to the measurement position of the desired microscopic area to perform the measurement, which not only reduces the time required for mechanical operation but also eliminates the uncertainty that may be introduced into optical measurement during operation. This makes it possible to improve measurement accuracy. Beneficial Effects of the Embodiment

[0052] One of the beneficial effects of the present invention is that the X-ray reflectance analysis system applying multiple X-ray beams provided by the present invention uses a diffraction element having a special microstructure and, by combining it with multiple sensors having a matrix arrangement, it becomes possible to simultaneously measure sensor signals generated from multiple microscopic areas, effectively shortening the overall measurement time.

[0053] Furthermore, when performing multi-point measurements, it is no longer necessary to move the measurement object via a power mechanism or to rotate the X-ray source device to the desired measurement position of a microscopic area, which not only reduces the time required for mechanical operations but also eliminates the uncertainty that may be introduced into optical measurements during operation, thereby improving measurement accuracy.

[0054] The above disclosure is merely a preferred embodiment of the present invention and does not limit the scope of the claims of the present invention. Therefore, all equivalent technical modifications made using the specification and drawings of the present invention are included in the scope of the claims of the present invention. [Explanation of symbols]

[0055] 1, 2, 3: X-ray Reflectometry System 10, 20, 30-1, 30-2, 30-3, 30-4: X-ray source device 12, 22, 32: Diffraction elements 14, 24, 34-1, 34-2, 34-3, 34-4: Sensors 16, 26, 36: Processing unit 100, 200: X-ray generator 102, 202-1, 202-2: Optical elements OBJ: Measurement object Mx: Matrix format OP: Optical path 120:Incidence plane DU: Diffraction unit D1: 1st direction Px: First length D2:Second direction Py: Second Length Dn: Normal direction Lx0, Lx0': Main X-ray beam Lx1, Lx1x, Lx1y, Lx1': Sub-X-ray beams Lx1c: Center beam θx: 1st scattering angle θy: 2nd scattering angle R1, R2, R3, R4: Recesses L1: 1st material layer L2: 2nd material layer L3: 3rd material layer L4: 4th material layer A1:First area A2:Second area A3: Third area A4: 4th area S1, S2, S3: Sensor signals

Claims

1. at least one X-ray source device used to generate a primary X-ray beam; a diffractive element used to split the main X-ray beam into a plurality of sub-X-ray beams in a matrix format; at least one sensor used to acquire a plurality of sensor signals generated after a measurement object is irradiated with the plurality of sub-X-ray beams; a processing unit configured to control the x-ray source device to generate the primary x-ray beam and to analyze the plurality of sensor signals to generate a plurality of analysis results; Equipped with 1. An X-ray reflectometry system using multiple X-ray beams.

2. the diffraction element has an incident surface and includes a plurality of diffraction units arranged along the incident surface, each of the diffraction units having a first length in a first direction and a second length in a second direction; The X-ray reflectometry system of claim 1 .

3. the incidence surface has a normal direction, and the first direction, the second direction, and the normal direction are orthogonal to each other. The X-ray reflectometry system of claim 2 .

4. The matrix format includes a k×k matrix, where k is an odd number greater than or equal to 3. The X-ray reflectometry system of claim 2 .

5. the plurality of sub-X-ray beams include a central beam, the sub-X-ray beams closest to the central beam in the first direction have a first scattering angle, and the sub-X-ray beams closest to the central beam in the second direction have a second scattering angle; 5. The X-ray reflectometry system of claim 4.

6. the first length and the second length are directly proportional to a predetermined wavelength of the primary X-ray beam, the first length is inversely proportional to a sine function of the first scattering angle, and the second length is inversely proportional to a sine function of the second scattering angle.

6. The X-ray reflectometry system of claim 5.

7. the diffraction element is an m-th order diffraction element and includes m material layers stacked on top of each other, and the height of each material layer is expressed as Hm=λ / m×(n−1), where Hm is the height of each material layer, m is an integer equal to or greater than 2, n is the refractive index of each material layer, and λ is the predetermined wavelength; 7. The X-ray reflectometry system of claim 6.

8. When n is 5 and m is 2, each of the diffraction units has a rectangular shape in a plan view and includes a first material layer and a second material layer, the first material layer is located above the second material layer, and includes four recesses having different cross-sectional areas and respectively located at four corners of the rectangle.

8. The X-ray reflectometry system of claim 7.

9. When n is 5 and m is 4, each of the diffraction units has a rectangular shape in a plan view and includes a first material layer, a second material layer, a third material layer, and a fourth material layer stacked in order, and in each of the diffraction units, three first regions, six second regions, five third regions, and five fourth regions are formed from high to low.

8. The X-ray reflectometry system of claim 7.

10. each of the layers of material having a reflectivity greater than 95% at the predetermined wavelength; 8. The X-ray reflectometry system of claim 7.

11. the number of the at least one sensor is plural, and at least some of the sensors are arranged in a matrix format; An X-ray reflectometry system according to any one of claims 1 to 10.

12. Each of the sensors is a reflected light sensor used to acquire the plurality of sensor signals generated by the measurement object being irradiated with the plurality of sub-X-ray beams and then reflected therefrom; a diffraction optical sensor used to acquire the plurality of sensor signals generated by diffraction of the plurality of sub-X-ray beams after the measurement object is irradiated with the plurality of sub-X-ray beams; a scattered light sensor used to acquire the plurality of sensor signals generated by scattering the plurality of sub-X-ray beams after the measurement object is irradiated with the plurality of sub-X-ray beams; a fluorescent sensor used to acquire the plurality of sensor signals generated by excitation of the measurement object after the measurement object is irradiated with the plurality of sub-X-ray beams; comprising at least one of:

12. The X-ray reflectometry system of claim 11.

13. the processing device performs a multi-model fitting process on the plurality of sensor signals based on a target structural model, and generates a plurality of structural parameters corresponding to the target structural model as the plurality of analysis results; 13. The X-ray reflectometry system of claim 12.

14. the processing unit performs an X-ray critical dimension (XRCD) analysis on the plurality of sensor signals generated by the reflected light sensors.

14. The X-ray reflectometry system of claim 13.

15. the processing unit performs X-ray diffraction (XRD) analysis on the plurality of sensor signals generated by the diffractive optical sensors; 14. The X-ray reflectometry system of claim 13.

16. the processing unit performs small-angle X-ray scattering (SAX) analysis on the plurality of sensor signals generated by the scattered light sensors.

14. The X-ray reflectometry system of claim 13.

17. the processing unit performs X-ray fluorescence (XRF) analysis on the plurality of sensor signals generated by the fluorescent sensors.

14. The X-ray reflectometry system of claim 13.

18. each of the X-ray source devices includes an X-ray generator and a plurality of optical elements, the X-ray generator, the plurality of optical elements, and the measurement object are arranged along an optical path, and the diffraction element is further arranged between any two of the X-ray generator, the plurality of optical elements, and the measurement object, and is located in the optical path; The X-ray reflectometry system of claim 1 .

Images