Heat treatment method and heat treatment apparatus

Abstract

To provide a heat treatment method and a heat treatment apparatus capable of preventing defects caused by performing flash light irradiation processing on a substrate that has not yet reached a target temperature.SOLUTION: A semiconductor wafer carried into a chamber is preliminarily heated by a halogen lamp. In the final stage of the preliminary heating by the halogen lamp, immediately before flash light irradiation, the target temperature for the preliminary heating is compared with a measured temperature of the semiconductor wafer measured by a radiation thermometer. When the measured temperature of the semiconductor wafer falls outside a preset allowable range relative to the target temperature, an alarm is issued and processing on the target semiconductor wafer is stopped without performing the flash light irradiation. On the other hand, when the measured temperature of the semiconductor wafer falls within the allowable range, flash light irradiation processing is performed on the semiconductor wafer.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present invention relates to a heat treatment method and a heat treatment apparatus for heating a substrate by irradiating the substrate with flash light, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a flat panel display (FPD), a substrate for an optical disk, a substrate for a magnetic disk, or a substrate for a solar cell. [Background technology]

[0002] Flash lamp annealing (FLA), which heats semiconductor wafers in an extremely short time, is attracting attention in the semiconductor device manufacturing process.Flash lamp annealing is a heat treatment technology that uses a xenon flash lamp (hereinafter, simply referred to as "flash lamp" means a xenon flash lamp) to irradiate the surface of a semiconductor wafer with flash light, thereby raising the temperature of only the surface of the semiconductor wafer in an extremely short time (a few milliseconds or less).

[0003] The spectral distribution of radiation from a xenon flash lamp is in the ultraviolet to near-infrared range, with a shorter wavelength than conventional halogen lamps and a wavelength that roughly matches the fundamental absorption band of silicon semiconductor wafers. Therefore, when a semiconductor wafer is irradiated with flash light from a xenon flash lamp, little light is transmitted, making it possible to rapidly heat the semiconductor wafer. It has also been found that if the flash light is irradiated for an extremely short period of time, less than a few milliseconds, it is possible to selectively heat only the area near the surface of the semiconductor wafer.

[0004] Flash lamp annealing is used in processes that require heating for an extremely short period of time, such as activating impurities implanted in a semiconductor wafer. By irradiating the surface of a semiconductor wafer into which impurities have been implanted by ion implantation with a flash light from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature in an extremely short period of time, allowing only the impurities to be activated without diffusing them deeply.

[0005] Patent Documents 1 and 2 disclose heat treatment apparatuses using such xenon flash lamps, in which a flash lamp is arranged on the front side of a semiconductor wafer and a continuously lit lamp such as a halogen lamp is arranged on the back side, and the desired heat treatment is performed by combining these. In such heat treatment apparatuses, the semiconductor wafer is preheated to a certain temperature using a halogen lamp, and then the front side of the semiconductor wafer is heated to the desired treatment temperature by irradiating it with flash light from the flash lamp. Preheating using a halogen lamp has the process advantage of being able to heat the semiconductor wafer to a relatively high preheat temperature in a short period of time. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2018-133424 [Patent Document 2] Japanese Patent Publication No. 2021-150566 Summary of the Invention [Problem to be solved by the invention]

[0007] In the heat treatment techniques disclosed in Patent Documents 1 and 2, the temperature of the semiconductor wafer is measured with a radiation thermometer, and the output of the halogen lamp is controlled in a closed loop (feedback control) so that the wafer temperature reaches a predetermined preheating temperature. After the temperature of the semiconductor wafer reaches the predetermined preheating temperature, a flash light is irradiated from the flash lamp.

[0008] However, due to various factors such as warpage of the semiconductor wafer, abnormal hardware conditions, and inadequate adjustment of control parameters, the temperature of the semiconductor wafer during preheating with the halogen lamp may not reach the target temperature of the closed-loop control. If flash light irradiation is performed in this state, the desired device characteristics may not be obtained depending on the process. This results in a problem of reduced yield.

[0009] Furthermore, since the above-mentioned abnormalities in device characteristics are discovered during device performance testing, which is a process that occurs much later than the flash heat treatment, there is also the problem that it takes a considerable amount of time to recognize abnormalities in device characteristics caused by flash light irradiation before the semiconductor wafer temperature has reached the target temperature of closed-loop control.

[0010] The present invention has been made in consideration of the above-mentioned problems, and aims to provide a heat treatment method and heat treatment apparatus that can prevent problems caused by performing flash light irradiation treatment on a substrate that has not yet reached the target temperature. [Means for solving the problem]

[0011] In order to solve the above problems, a first aspect of the present invention is a heat treatment method for heating a substrate by irradiating the substrate with flash light, the method comprising: a preheating step in which the substrate accommodated in a chamber is preheated by irradiating the substrate with light from a continuously lit lamp; a flash heating step in which, after the preheating step, the surface of the substrate is heated by irradiating the surface of the substrate with flash light from a flash lamp; and a temperature decreasing step in which, after the flash heating step, the temperature of the substrate in the chamber is decreased. A target temperature in the preheating step is compared with a measured temperature of the substrate measured by a radiation thermometer, and if the measured temperature is outside an allowable range for the target temperature, the processing of the substrate is stopped without irradiating the flash light.

[0012] In addition, a second aspect is the heat treatment method according to the first aspect, wherein the preheating step includes a step of closed-loop controlling the output of the continuously lit lamp, and the target temperature is a target value of the closed-loop control.

[0013] In addition, a third aspect of the present invention is the heat treatment method according to the first or second aspect, further comprising a setting step of setting the tolerance range before starting treatment of the substrate.

[0014] In addition, a fourth aspect is a heat treatment method for heating a substrate by irradiating the substrate with flash light, the method comprising: a preheating step of preheating the substrate accommodated in a chamber by irradiating the substrate with light from a continuously lit lamp; a flash heating step of raising the temperature of the surface of the substrate by irradiating the surface of the substrate with flash light from a flash lamp after the preheating step; and a cooling step of cooling the substrate in the chamber after the flash heating step, wherein a target output value of the continuously lit lamp in the preheating step is compared with a measured output value output from the continuously lit lamp, and if the measured output value is outside an allowable range for the target output value, processing of the substrate is stopped without irradiating the flash light.

[0015] In addition, in a fifth aspect, in the heat treatment method according to the fourth aspect, the target temperature in the preheating step is compared with the measured temperature of the substrate measured by a radiation thermometer, and if the measured temperature is outside an allowable range for the target temperature, the processing of the substrate is stopped without irradiating the flash light.

[0016] In addition, a sixth aspect is the heat treatment method according to the fourth or fifth aspect, further comprising a setting step of setting an allowable range for the target output value before starting processing of the substrate.

[0017] In addition, a seventh aspect is a heat treatment method for heating a substrate by irradiating the substrate with flash light, the method comprising: a preheating step of preheating the substrate accommodated in a chamber by irradiating the substrate with light from a continuously lit lamp; a flash heating step of raising the temperature of the surface of the substrate by irradiating the surface of the substrate with flash light from a flash lamp after the preheating step; and a cooling step of cooling the substrate in the chamber after the flash heating step, wherein a target temperature in the preheating step is compared with a measured temperature of the substrate measured by a radiation thermometer, and if the measured temperature is outside an allowable range for the target temperature, the irradiation of the flash light is put on hold until the measured temperature reaches within the allowable range.

[0018] In addition, an eighth aspect is a heat treatment method according to the seventh aspect, wherein when the time for waiting for irradiation of the flash light has elapsed a preset maximum waiting time, the processing of the substrate is stopped without irradiating the flash light.

[0019] In addition, in a ninth aspect, in the heat treatment method according to the seventh aspect, the time during which the flash light irradiation is waited is subtracted from a temperature drop time that is preset as a time for lowering the temperature of the substrate in the temperature drop step.

[0020] In addition, a tenth aspect of the present invention is the heat treatment method according to any one of the seventh to ninth aspects, further comprising a setting step of setting the tolerance range before starting treatment of the substrate.

[0021] In addition, an eleventh aspect is a heat treatment apparatus that heats a substrate by irradiating the substrate with flash light, the heat treatment apparatus comprising: a chamber that accommodates the substrate; a continuously lit lamp that irradiates the substrate accommodated in the chamber with light to preheat the substrate; a flash lamp that raises the temperature of the surface of the preheated substrate by irradiating the surface with flash light; a radiation thermometer that measures the temperature of the substrate; and a control unit that compares a target temperature in the preheating with the measured temperature of the substrate measured by the radiation thermometer, and stops processing of the substrate without irradiating the flash light if the measured temperature is outside an allowable range for the target temperature.

[0022] In a twelfth aspect, in the heat treatment apparatus according to the eleventh aspect, in the preheating, the output of the continuously lit lamp is controlled in a closed loop, and the target temperature is a target value of the closed loop control.

[0023] In a thirteenth aspect, the heat treatment apparatus according to the eleventh or twelfth aspect further comprises an input unit that receives a setting input of the tolerance range before starting the processing of the substrate.

[0024] In addition, a fourteenth aspect is a heat treatment apparatus that heats a substrate by irradiating the substrate with flash light, the heat treatment apparatus comprising: a chamber that accommodates the substrate; a continuously lit lamp that irradiates the substrate accommodated in the chamber with light to preheat the substrate; a flash lamp that raises the temperature of the surface of the preheated substrate by irradiating the surface with flash light; a radiation thermometer that measures the temperature of the substrate; and a control unit that compares a target output value of the continuously lit lamp during the preheating with a measured output value output from the continuously lit lamp, and stops processing of the substrate without irradiating the flash light if the measured output value is outside an allowable range for the target output value.

[0025] In a fifteenth aspect, in the heat treatment apparatus according to the fourteenth aspect, the control unit compares the target temperature in the preheating with the measured temperature of the substrate measured by the radiation thermometer, and when the measured temperature is outside the allowable range for the target temperature, stops processing of the substrate without irradiating it with the flash light.

[0026] In a sixteenth aspect, the heat treatment apparatus according to the fourteenth or fifteenth aspect further comprises an input unit that receives a setting input of an allowable range for the target output value before starting processing of the substrate.

[0027] In addition, a seventeenth aspect is a heat treatment apparatus that heats a substrate by irradiating the substrate with a flash light, the heat treatment apparatus comprising: a chamber that accommodates the substrate; a continuously lit lamp that irradiates the substrate accommodated in the chamber with light to preheat the substrate; a flash lamp that raises the temperature of the surface of the preheated substrate by irradiating the surface with a flash light; a radiation thermometer that measures the temperature of the substrate; and a control unit that compares a target temperature in the preheating with the measured temperature of the substrate measured by the radiation thermometer, and, if the measured temperature is outside an allowable range for the target temperature, causes the irradiation of the flash light to wait until the measured temperature reaches within the allowable range.

[0028] In addition, in an 18th aspect, in the heat treatment apparatus according to the 17th aspect, the control unit stops processing of the substrate without irradiating the flash light when the time for waiting to irradiate the flash light has exceeded a predetermined maximum waiting time.

[0029] In addition, in a 19th aspect, in the heat treatment apparatus according to the 17th aspect, the control unit subtracts the time for waiting to irradiate the flash light from a temperature reduction time that is preset as the time for reducing the temperature of the substrate after irradiating the flash light.

[0030] In addition, according to a twentieth aspect, the heat treatment apparatus according to any one of the seventeenth to nineteenth aspects further comprises an input unit that receives a setting input of the tolerance range before starting the processing of the substrate. [Effects of the Invention]

[0031] According to the heat treatment methods of the first to third aspects, when the measured temperature in the preheating step is outside the allowable range for the target temperature, the processing of the substrate is stopped without irradiating it with flash light, so that no subsequent processes are performed on the substrate, thereby preventing problems caused by performing flash light irradiation processing on a substrate that has not yet reached the target temperature.

[0032] According to the heat treatment methods of the fourth to sixth aspects, when the measured output value of the continuously lit lamp in the preheating step is outside the allowable range for the target output value, processing of the substrate is stopped without irradiating it with flash light. Therefore, subsequent processes are not performed on substrates that are likely not to have reached the target temperature, and problems caused by performing flash light irradiation processing on substrates that have not yet reached the target temperature can be prevented.

[0033] According to the heat treatment methods of the seventh to tenth aspects, when the measured temperature in the preheating step is outside the allowable range for the target temperature, the flash light irradiation is delayed until the measured temperature reaches the allowable range, so that the flash light is irradiated only after the substrate temperature reaches the allowable range, thereby preventing problems caused by performing flash light irradiation processing on a substrate that has not yet reached the target temperature.

[0034] In particular, according to the heat treatment method of the eighth aspect, when the time for waiting for irradiation of flash light exceeds a preset maximum waiting time, the processing of the substrate is stopped without irradiating the flash light, thereby preventing the thermal history of the substrate from becoming excessively large.

[0035] In particular, according to the heat treatment method of the ninth aspect, the time required to wait before irradiating the flash light is subtracted from the temperature reduction time preset as the time required to reduce the temperature of the substrate in the temperature reduction step, so that the time required for the entire substrate processing can be adjusted to a constant value.

[0036] According to the heat treatment apparatuses of the 11th to 13th aspects, when the measured temperature during preheating is outside the allowable range for the target temperature, the processing of the substrate is stopped without irradiating it with flash light, so that no further processes are performed on the substrate, thereby preventing problems caused by performing flash light irradiation processing on a substrate that has not yet reached the target temperature.

[0037] According to the heat treatment apparatuses of the 14th to 16th aspects, when the measured output value of the continuously lit lamp during preheating is outside the allowable range for the target output value, processing of the substrate is stopped without irradiating it with flash light, so that subsequent processes are not performed on substrates that are likely not to have reached the target temperature, thereby preventing problems caused by performing flash light irradiation processing on substrates that have not yet reached the target temperature.

[0038] According to the heat treatment apparatuses of the 17th to 20th aspects, when the measured temperature during preheating is outside the allowable range for the target temperature, the flash light is not irradiated until the measured temperature reaches the allowable range, so that the flash light is irradiated only after the substrate temperature reaches the allowable range, thereby preventing problems caused by performing flash light irradiation processing on a substrate that has not yet reached the target temperature.

[0039] In particular, according to the heat treatment apparatus of the 18th aspect, when the time for waiting for irradiation of flash light exceeds a predetermined maximum waiting time, processing of the substrate is stopped without irradiating the flash light, thereby preventing the thermal history of the substrate from becoming excessively large.

[0040] In particular, according to the heat treatment apparatus of the 19th aspect, the time spent waiting for irradiation of the flash light is subtracted from the temperature reduction time that is preset as the time required to reduce the temperature of the substrate after irradiation of the flash light, so that the time required for the entire substrate processing can be adjusted to a constant value. [Brief explanation of the drawings]

[0041] [Figure 1] 1 is a vertical cross-sectional view showing the configuration of a heat treatment apparatus according to the present invention. [Figure 2] FIG. 2 is a perspective view showing the overall appearance of the holding portion. [Figure 3] FIG. [Figure 4] FIG. 2 is a cross-sectional view of a susceptor. [Figure 5] FIG. [Figure 6] FIG. [Figure 7] FIG. 2 is a plan view showing the arrangement of a plurality of halogen lamps. [Figure 8] FIG. 2 is a block diagram showing the configuration of a control unit. [Figure 9] 3 is a flowchart showing the procedure of a processing operation of the heat treatment apparatus of the first embodiment shown in FIG. [Figure 10] FIG. 1 is a diagram showing temperature changes of a semiconductor wafer during heat treatment. [Figure 11] 10 is a flowchart showing a processing procedure according to a second embodiment. [Figure 12] 10 is a flowchart showing a processing procedure according to a third embodiment. [Figure 13] FIG. 10 is a diagram for explaining standby for flash light irradiation. [Figure 14] 10A and 10B are diagrams for explaining a case where the measured temperature of the semiconductor wafer does not fall within the allowable range for the target temperature. DETAILED DESCRIPTION OF THE INVENTION

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Hereinafter, expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) not only strictly represent the positional relationship but also represent a state of relative angular or distance displacement within a tolerance or a range that provides equivalent functionality, unless otherwise specified. Furthermore, expressions indicating an equal state (e.g., "identical," "equal," "homogeneous," etc.) not only represent a state of strict quantitative equality but also represent a state of difference that provides a tolerance or equivalent functionality, unless otherwise specified. Furthermore, expressions indicating a shape (e.g., "circular," "square," "cylindrical," etc.) not only represent a geometrically strict shape but also represent a shape within a range that provides equivalent functionality, such as irregularities or chamfers, unless otherwise specified. Furthermore, expressions such as "comprise," "comprise," "include," "have," etc., regarding components, are not exclusive expressions that exclude the presence of other components. Furthermore, the expression "at least one of A, B, and C" includes "A only," "B only," "C only," "any two of A, B, and C," and "all of A, B, and C."

[0043] First Embodiment FIG. 1 is a vertical cross-sectional view showing the configuration of a heat treatment apparatus 1 according to the present invention. The heat treatment apparatus 1 in FIG. 1 is a flash lamp annealing apparatus that heats a disk-shaped semiconductor wafer W as a substrate by irradiating the semiconductor wafer W with flash light. The size of the semiconductor wafer W to be treated is not particularly limited, but is, for example, φ300 mm or φ450 mm (φ300 mm in this embodiment). Note that in FIG. 1 and the subsequent figures, the dimensions and number of various parts are exaggerated or simplified as necessary for ease of understanding.

[0044] Heat treatment apparatus 1 includes a chamber 6 that accommodates a semiconductor wafer W, a flash heating unit 5 that incorporates multiple flash lamps FL, and a halogen heating unit 4 that incorporates multiple halogen lamps HL. The flash heating unit 5 is provided above chamber 6, and the halogen heating unit 4 is provided below. Heat treatment apparatus 1 also includes, inside chamber 6, a holder 7 that holds the semiconductor wafer W in a horizontal position, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holder 7 and the outside of the apparatus. Heat treatment apparatus 1 also includes a control unit 3 that controls the operating mechanisms provided in the halogen heating unit 4, flash heating unit 5, and chamber 6 to perform heat treatment on the semiconductor wafer W.

[0045] The chamber 6 is constructed by attaching quartz chamber windows to the top and bottom of a cylindrical chamber side portion 61. The chamber side portion 61 has a roughly cylindrical shape with openings at the top and bottom, with an upper chamber window 63 attached to and closing the upper opening, and a lower chamber window 64 attached to and closing the lower opening. The upper chamber window 63, which forms the ceiling of the chamber 6, is a disc-shaped member made of quartz and functions as a quartz window that transmits the flash light emitted from the flash heating unit 5 into the chamber 6. The lower chamber window 64, which forms the floor of the chamber 6, is also a disc-shaped member made of quartz and functions as a quartz window that transmits the light from the halogen heating unit 4 into the chamber 6.

[0046] Furthermore, a reflective ring 68 is attached to the upper part of the inner wall surface of the chamber side 61, and a reflective ring 69 is attached to the lower part. Both reflective rings 68, 69 are formed in an annular shape. The upper reflective ring 68 is attached by fitting it from the upper side of the chamber side 61. On the other hand, the lower reflective ring 69 is attached by fitting it from the lower side of the chamber side 61 and fastening it with screws (not shown). In other words, both reflective rings 68, 69 are detachably attached to the chamber side 61. The internal space of the chamber 6, i.e., the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61, and the reflective rings 68, 69, is defined as a heat treatment space 65.

[0047] By attaching the reflecting rings 68, 69 to the chamber side portion 61, a recess 62 is formed on the inner wall surface of the chamber 6. That is, the recess 62 is formed by a central portion of the inner wall surface of the chamber side portion 61 where the reflecting rings 68, 69 are not attached, the lower end surface of the reflecting ring 68, and the upper end surface of the reflecting ring 69. The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6, and surrounds the holder 7 that holds the semiconductor wafer W. The chamber side portion 61 and the reflecting rings 68, 69 are made of a metal material (e.g., stainless steel) that has excellent strength and heat resistance.

[0048] Furthermore, a transfer opening (furnace port) 66 is formed in the chamber side portion 61, through which a semiconductor wafer W is loaded into and unloaded from the chamber 6. The transfer opening 66 can be opened and closed by a gate valve 185. The transfer opening 66 is connected to the outer peripheral surface of the recessed portion 62. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W can be loaded into and unloaded from the heat treatment space 65 through the transfer opening 66 and the recessed portion 62. Furthermore, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the chamber 6 becomes an airtight space.

[0049] Furthermore, through-holes 61a and 61b are formed in the chamber side portion 61. The through-hole 61a is a cylindrical hole for guiding infrared light radiated from the upper surface of a semiconductor wafer W held on a susceptor 74 (described later) to the infrared sensor 29 of the upper radiation thermometer 25. On the other hand, the through-hole 61b is a cylindrical hole for guiding infrared light radiated from the lower surface of the semiconductor wafer W to the lower radiation thermometer 20. The through-holes 61a and 61b are provided at an angle with respect to the horizontal direction so that their penetrating axes intersect with the main surface of the semiconductor wafer W held on the susceptor 74. A transparent window 26 made of calcium fluoride material that transmits infrared light in a wavelength range measurable by the upper radiation thermometer 25 is attached to the end of the through-hole 61a facing the heat treatment space 65. Furthermore, a transparent window 21 made of barium fluoride material that transmits infrared light in the wavelength range that can be measured by the lower radiation thermometer 20 is attached to the end of the through hole 61b facing the heat treatment space 65.

[0050] Gas supply holes 81 are formed in the upper part of the inner wall of the chamber 6 to supply processing gas to the heat treatment space 65. The gas supply holes 81 are formed at a position above the recess 62 and may be provided in the reflecting ring 68. The gas supply holes 81 are connected to a gas supply pipe 83 via a buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to a processing gas supply source 85. A valve 84 is inserted in the gas supply pipe 83. When the valve 84 is opened, processing gas is supplied from the processing gas supply source 85 to the buffer space 82. The processing gas that has flowed into the buffer space 82 spreads within the buffer space 82, which has lower fluid resistance than the gas supply holes 81, and is supplied from the gas supply holes 81 into the heat treatment space 65. The processing gas may be, for example, an inert gas such as nitrogen (N), a reactive gas such as hydrogen (H) or ammonia (NH), or a mixture thereof (nitrogen gas in this embodiment).

[0051] Meanwhile, a gas exhaust hole 86 is formed in the lower part of the inner wall of the chamber 6 to exhaust gas from the heat treatment space 65. The gas exhaust hole 86 is formed below the recess 62 and may be provided in the reflecting ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 via a buffer space 87 formed in an annular shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to an exhaust unit 190. A valve 89 is inserted in the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is exhausted from the gas exhaust hole 86 through the buffer space 87 to the gas exhaust pipe 88. The gas supply hole 81 and the gas exhaust hole 86 may be provided in multiple numbers along the circumferential direction of the chamber 6, or may be slit-shaped. The process gas supply source 85 and the exhaust unit 190 may be mechanisms provided in the heat treatment apparatus 1 or may be utilities of a factory where the heat treatment apparatus 1 is installed.

[0052] A gas exhaust pipe 191 for discharging gas from the heat treatment space 65 is also connected to the tip of the transfer opening 66. The gas exhaust pipe 191 is connected to an exhaust unit 190 via a valve 192. By opening the valve 192, the gas in the chamber 6 is exhausted through the transfer opening 66.

[0053] 2 is a perspective view showing the overall appearance of the holder 7. The holder 7 is configured to include a base ring 71, a connecting portion 72, and a susceptor 74. The base ring 71, the connecting portion 72, and the susceptor 74 are all made of quartz. In other words, the entire holder 7 is made of quartz.

[0054] The base ring 71 is an arc-shaped quartz member with a portion missing from the annular shape. This missing portion is provided to prevent interference between the base ring 71 and a transfer arm 11 of the transfer mechanism 10, which will be described later. The base ring 71 is placed on the bottom surface of the recess 62, and is supported by the wall surface of the chamber 6 (see FIG. 1). A plurality of connecting portions 72 (four in this embodiment) are erected on the upper surface of the base ring 71 along the circumferential direction of the annular shape. The connecting portions 72 are also quartz members, and are fixed to the base ring 71 by welding.

[0055] The susceptor 74 is supported by four connecting portions 72 provided on the base ring 71. FIG. 3 is a plan view of the susceptor 74. FIG. 4 is a cross-sectional view of the susceptor 74. The susceptor 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular, flat member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a planar size larger than that of the semiconductor wafer W.

[0056] A guide ring 76 is installed on the periphery of the upper surface of the holding plate 75. The guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, if the diameter of the semiconductor wafer W is φ300 mm, the inner diameter of the guide ring 76 is φ320 mm. The inner periphery of the guide ring 76 has a tapered surface that widens upward from the holding plate 75. The guide ring 76 is made of quartz, the same as the holding plate 75. The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integrated member.

[0057] The area of ​​the upper surface of the holding plate 75 that is inside the guide ring 76 is a flat holding surface 75a that holds the semiconductor wafer W. A plurality of substrate support pins 77 are provided on the holding surface 75a of the holding plate 75. In this embodiment, a total of 12 substrate support pins 77 are provided at 30° intervals along a circumference concentric with the outer circumferential circle of the holding surface 75a (the inner circumferential circle of the guide ring 76). The diameter of the circle on which the 12 substrate support pins 77 are arranged (the distance between opposing substrate support pins 77) is smaller than the diameter of the semiconductor wafer W. If the diameter of the semiconductor wafer W is 300 mm, the diameter is 270 mm to 280 mm (270 mm in this embodiment). Each substrate support pin 77 is made of quartz. The plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be machined integrally with the holding plate 75.

[0058] Returning to FIG. 2, four connecting portions 72 erected on the base ring 71 are fixed to the peripheral edge of the holding plate 75 of the susceptor 74 by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portions 72. The base ring 71 of the holding portion 7 is supported on the wall surface of the chamber 6, and the holding portion 7 is thereby attached to the chamber 6. When the holding portion 7 is attached to the chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal position (a position in which the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 is a horizontal plane.

[0059] The semiconductor wafer W carried into the chamber 6 is placed and held in a horizontal position on the susceptor 74 of the holder 7 attached to the chamber 6. At this time, the semiconductor wafer W is supported by twelve substrate support pins 77 erected on a holding plate 75 and held on the susceptor 74. More precisely, the upper ends of the twelve substrate support pins 77 contact the underside of the semiconductor wafer W to support the semiconductor wafer W. The heights of the twelve substrate support pins 77 (the distance from the upper ends of the substrate support pins 77 to the holding surface 75a of the holding plate 75) are uniform, so the twelve substrate support pins 77 can support the semiconductor wafer W in a horizontal position.

[0060] Furthermore, the semiconductor wafer W is supported by a plurality of substrate support pins 77 at a predetermined distance from the holding surface 75a of the holding plate 75. The thickness of the guide ring 76 is greater than the height of the substrate support pins 77. Therefore, the guide ring 76 prevents the semiconductor wafer W supported by the plurality of substrate support pins 77 from shifting in the horizontal direction.

[0061] 2 and 3, an opening 78 is formed in the holding plate 75 of the susceptor 74, penetrating vertically. The opening 78 is provided so that the lower radiation thermometer 20 can receive radiation (infrared light) emitted from the underside of the semiconductor wafer W. That is, the lower radiation thermometer 20 receives the light emitted from the underside of the semiconductor wafer W through the opening 78 and a transparent window 21 attached to the through-hole 61b of the chamber side 61, thereby measuring the temperature of the semiconductor wafer W. Furthermore, the holding plate 75 of the susceptor 74 is formed with four through-holes 79 through which lift pins 12 of the transfer mechanism 10, which will be described later, pass to transfer the semiconductor wafer W.

[0062] FIG. 5 is a plan view of the transfer mechanism 10. FIG. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arms 11 are arc-shaped so as to fit the generally annular recess 62. Two lift pins 12 are provided on each of the transfer arms 11. The transfer arms 11 and the lift pins 12 are made of quartz. Each transfer arm 11 is rotatable by a horizontal movement mechanism 13. The horizontal movement mechanism 13 horizontally moves the pair of transfer arms 11 between a transfer operation position (position indicated by a solid line in FIG. 5) where the transfer arms 11 transfer the semiconductor wafer W to the holder 7 and a retracted position (position indicated by a two-dot chain line in FIG. 5) where the transfer arms 11 do not overlap the semiconductor wafer W held by the holder 7 in a plan view. The horizontal movement mechanism 13 may be one that rotates each transfer arm 11 using an individual motor, or one that uses a link mechanism to rotate a pair of transfer arms 11 in conjunction with one another using a single motor.

[0063] Furthermore, the pair of transfer arms 11 are raised and lowered together with the horizontal movement mechanism 13 by the lifting mechanism 14. When the lifting mechanism 14 raises the pair of transfer arms 11 to the transfer operation position, a total of four lift pins 12 pass through through holes 79 (see FIGS. 2 and 3 ) formed in the susceptor 74, and the upper ends of the lift pins 12 protrude from the upper surface of the susceptor 74. On the other hand, when the lifting mechanism 14 lowers the pair of transfer arms 11 to the transfer operation position to remove the lift pins 12 from the through holes 79, and the horizontal movement mechanism 13 moves the pair of transfer arms 11 so as to open, each transfer arm 11 moves to a retracted position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holder 7. Because the base ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arms 11 is inside the recess 62. In addition, an exhaust mechanism (not shown) is also provided near the location where the drive part of the transfer mechanism 10 (horizontal movement mechanism 13 and lifting mechanism 14) is located, and is configured to exhaust the atmosphere around the drive part of the transfer mechanism 10 to the outside of the chamber 6.

[0064] Returning to FIG. 1 , the flash heating unit 5, which is provided above the chamber 6, is configured with a light source made up of multiple (30 in this embodiment) xenon flash lamps FL inside a housing 51, and a reflector 52 provided to cover the light source from above. A lamp light emission window 53 is attached to the bottom of the housing 51 of the flash heating unit 5. The lamp light emission window 53, which forms the floor of the flash heating unit 5, is a plate-shaped quartz window made of quartz. By installing the flash heating unit 5 above the chamber 6, the lamp light emission window 53 faces the upper chamber window 63. The flash lamps FL irradiate a heat treatment space 65 with flash light from above the chamber 6 through the lamp light emission window 53 and the upper chamber window 63.

[0065] The flash lamps FL are each a rod-shaped lamp having a long cylindrical shape, and are arranged in a plane so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (i.e., along the horizontal direction). Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane. The area in which the flash lamps FL are arranged is larger than the planar size of the semiconductor wafer W.

[0066] A xenon flash lamp FL comprises a cylindrical glass tube (discharge tube) filled with xenon gas and fitted with an anode and cathode connected to a capacitor at both ends, and a trigger electrode attached to the outer surface of the glass tube. Because xenon gas is an electrical insulator, electricity does not flow within the glass tube under normal conditions, even if a charge is stored in the capacitor. However, when a high voltage is applied to the trigger electrode, causing the insulation to break down, the electricity stored in the capacitor flows instantaneously within the glass tube, exciting the xenon atoms or molecules and emitting light. In such a xenon flash lamp FL, electrostatic energy previously stored in the capacitor is converted into extremely short light pulses of 0.1 to 100 milliseconds, enabling it to emit extremely intense light compared to continuous light sources such as halogen lamps HL. In other words, a flash lamp FL is a pulsed lamp that emits light instantaneously for an extremely short period of time, less than one second. The light emission time of the flash lamp FL can be adjusted by adjusting the coil constant of the lamp power supply that supplies power to the flash lamp FL.

[0067] Furthermore, reflector 52 is provided above the multiple flash lamps FL so as to cover them entirely. The basic function of reflector 52 is to reflect the flash light emitted from the multiple flash lamps FL toward the heat treatment space 65. Reflector 52 is made of an aluminum alloy plate, and its surface (the surface facing the flash lamps FL) is roughened by blasting.

[0068] The halogen heating unit 4, which is provided below the chamber 6, has a plurality of halogen lamps HL (40 in this embodiment) built into the inside of the housing 41. The halogen heating unit 4 is a light irradiation unit that heats the semiconductor wafer W by irradiating light from the plurality of halogen lamps HL from below the chamber 6 through a lower chamber window 64 into a heat treatment space 65.

[0069] FIG. 7 is a plan view showing the arrangement of multiple halogen lamps HL. 40 halogen lamps HL are arranged in two rows, upper and lower. 20 halogen lamps HL are arranged in the upper row, which is closer to the holder 7, and 20 halogen lamps HL are also arranged in the lower row, which is farther from the holder 7 than the upper row. Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape. In both the upper and lower rows, the 20 halogen lamps HL are arranged so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holder 7 (i.e., along the horizontal direction). Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper and lower rows is a horizontal plane.

[0070] 7, the halogen lamps HL are arranged more densely in the region facing the periphery of the semiconductor wafer W held by the holder 7 on both the upper and lower tiers than in the region facing the center of the semiconductor wafer W. That is, on both the upper and lower tiers, the halogen lamps HL are arranged at a shorter pitch in the periphery of the lamp arrangement than in the center. This allows a greater amount of light to be irradiated onto the periphery of the semiconductor wafer W, which is prone to temperature drop during heating due to light irradiation from the halogen heating unit 4.

[0071] The lamp group consisting of the halogen lamps HL on the upper row and the lamp group consisting of the halogen lamps HL on the lower row are arranged so as to intersect in a grid pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of the 20 halogen lamps HL arranged on the upper row and the longitudinal direction of the 20 halogen lamps HL arranged on the lower row are perpendicular to each other.

[0072] A halogen lamp HL is a filament-type light source that emits light by passing electricity through a filament placed inside a glass tube, causing it to incandescent. The glass tube is filled with an inert gas, such as nitrogen or argon, containing trace amounts of halogen elements (iodine, bromine, etc.). The introduction of halogen elements makes it possible to set the filament temperature at a high temperature while preventing filament breakage. Therefore, compared to standard incandescent light bulbs, halogen lamps HL have the characteristics of a longer lifespan and the ability to continuously emit strong light. In other words, halogen lamps HL are continuous lamps that emit light continuously for at least one second. Furthermore, because halogen lamps HL are rod-shaped, they have a long lifespan, and by arranging them horizontally, they achieve excellent radiation efficiency toward the semiconductor wafer W above.

[0073] Also, a reflector 43 is provided below the two-tiered halogen lamps HL inside the housing 41 of the halogen heating unit 4 (FIG. 1). The reflector 43 reflects the light emitted from the multiple halogen lamps HL toward the heat treatment space 65.

[0074] As shown in FIG. 1, the heat treatment apparatus 1 includes an upper radiation thermometer 25 and a lower radiation thermometer 20. The upper radiation thermometer 25 is installed diagonally above the semiconductor wafer W held on the susceptor 74 and receives infrared light radiated from the top surface of the semiconductor wafer W to measure the temperature of the top surface. The infrared sensor 29 of the upper radiation thermometer 25 includes an InSb (indium antimonide) optical element to respond to the sudden temperature change on the top surface of the semiconductor wafer W at the moment when the flash light is irradiated. On the other hand, the lower radiation thermometer 20 is installed diagonally below the semiconductor wafer W held on the susceptor 74 and receives infrared light radiated from the bottom surface of the semiconductor wafer W to measure the temperature of the bottom surface.

[0075] The control unit 3 controls the various operating mechanisms provided in the heat treatment apparatus 1. FIG. 8 is a block diagram showing the configuration of the control unit 3. The hardware configuration of the control unit 3 is similar to that of a general computer. That is, the control unit 3 includes a CPU, which is a circuit that performs various arithmetic processing, a ROM, which is a read-only memory that stores basic programs, a RAM, which is a readable and writable memory that stores various information, and a storage unit 34 (e.g., a magnetic disk or SSD) that stores control software, data, and the like. The CPU of the control unit 3 executes a predetermined processing program, causing the processing in the heat treatment apparatus 1 to proceed.

[0076] A processing recipe 35 that defines the procedure and conditions for processing the semiconductor wafer W is stored in the memory unit 34 of the control unit 3. The processing recipe 35 is acquired by the heat processing apparatus 1, for example, by an operator of the apparatus inputting the recipe via the input unit 32 (described later) and storing the recipe in the memory unit 34. Alternatively, the processing recipe 35 may be transferred to the heat processing apparatus 1 by communication from a host computer that manages multiple heat processing apparatuses 1 and stored in the memory unit 34.

[0077] The control unit 3 is also provided with a comparison unit 38. The comparison unit 38 is a function processing unit that is realized by the CPU of the control unit 3 executing a predetermined processing program. The processing content of the comparison unit 38 will be described in more detail below.

[0078] The control unit 3 is electrically connected to elements such as a power regulator 49. The power regulator 49 adjusts the power supplied to the halogen lamps HL provided in the halogen heating unit 4. The power regulator 49 includes a voltage monitor 47 and a current monitor 48. The power regulator 49 adjusts the output power, for example, by thyristor phase control using a thyristor. The power regulator 49 also monitors the output power using the voltage monitor 47 and the current monitor 48. Specifically, the power regulator 49 measures the output power by multiplying the voltage measured by the voltage monitor 47 by the current measured by the current monitor 48. The control unit 3 provides an instruction value (power instruction value) to the power regulator 49 in accordance with, for example, the contents of the process recipe 35. While monitoring the output power using the voltage monitor 47 and the current monitor 48, the power regulator 49 controls the power so that the output power matches the provided instruction value.

[0079] Furthermore, a display unit 33 and an input unit 32 are connected to the control unit 3. The display unit 33 and the input unit 32 function as a user interface for the heat treatment device 1. The control unit 3 displays various information on the display unit 33. An operator of the heat treatment device 1 can input various commands and parameters from the input unit 32 while checking the information displayed on the display unit 33. The input unit 32 can be, for example, a keyboard or a mouse. The display unit 33 can be, for example, a liquid crystal display. In this embodiment, a liquid crystal touch panel provided on the outer wall of the heat treatment device 1 is used as the display unit 33 and the input unit 32, so that both functions are combined.

[0080] In addition to the above configuration, the heat treatment apparatus 1 is equipped with various cooling structures to prevent excessive temperature rise in the halogen heating unit 4, flash heating unit 5, and chamber 6 due to the thermal energy generated by the halogen lamps HL and flash lamps FL during heat treatment of the semiconductor wafer W. For example, a water-cooled pipe (not shown) is provided in the wall of the chamber 6. The halogen heating unit 4 and flash heating unit 5 also have an air-cooled structure that creates a gas flow inside to remove heat. Air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash heating unit 5 and upper chamber window 63.

[0081] Next, a description will be given of the processing operation in the heat treatment apparatus 1. Fig. 9 is a flowchart showing the procedure of the processing operation of the first embodiment in the heat treatment apparatus 1. The procedure of the processing operation described below progresses as the control unit 3 controls each operating mechanism of the heat treatment apparatus 1.

[0082] First, the air supply valve 84 is opened, and the exhaust valves 89, 192 are also opened to start supplying and exhausting air to and from the chamber 6. When the valve 84 is opened, nitrogen gas is supplied to the heat treatment space 65 through the gas supply hole 81. When the valve 89 is opened, the gas inside the chamber 6 is exhausted through the gas exhaust hole 86. As a result, the nitrogen gas supplied from the upper part of the heat treatment space 65 inside the chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65.

[0083] Furthermore, by opening the valve 192, the gas inside the chamber 6 is also exhausted from the transfer opening 66. Furthermore, the atmosphere around the drive unit of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown). Note that during the heat treatment of the semiconductor wafer W in the heat treatment apparatus 1, nitrogen gas is continuously supplied to the heat treatment space 65, and the supply amount is changed as appropriate depending on the treatment process.

[0084] Next, gate valve 185 is opened to open transfer opening 66, and a semiconductor wafer W to be processed is loaded into heat treatment space 65 in chamber 6 through transfer opening 66 by a transfer robot outside the apparatus (step S11). At this time, there is a risk that the atmosphere outside the apparatus may be drawn in as the semiconductor wafer W is loaded, but since nitrogen gas is continuously supplied to chamber 6, the nitrogen gas flows out from transfer opening 66, making it possible to minimize the inclusion of such external atmosphere.

[0085] The semiconductor wafer W carried in by the transfer robot advances to a position directly above the holder 7 and stops there. Then, the pair of transfer arms 11 of the transfer mechanism 10 move horizontally from the retracted position to the transfer operation position and rise, causing the lift pins 12 to pass through the through holes 79 and protrude from the upper surface of the holding plate 75 of the susceptor 74 to receive the semiconductor wafer W. At this time, the lift pins 12 rise to a position higher than the upper ends of the substrate support pins 77.

[0086] After the semiconductor wafer W is placed on the lift pins 12, the transfer robot exits the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. Then, the pair of transfer arms 11 descend, transferring the semiconductor wafer W from the transfer mechanism 10 to the susceptor 74 of the holder 7, where it is held horizontally from below. The semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on a holding plate 75 and held on the susceptor 74. The semiconductor wafer W is held on the holder 7 with its patterned surface facing up. A predetermined gap is formed between the back surface (the main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11, which have descended to below the susceptor 74, are retracted to a retracted position, i.e., inside the recess 62, by the horizontal movement mechanism 13.

[0087] After the semiconductor wafer W is held from below in a horizontal position by the susceptor 74 of the holder 7, which is made of quartz, the 40 halogen lamps HL of the halogen heating unit 4 are simultaneously turned on to begin preheating (assisted heating) (step S12). The halogen light emitted from the halogen lamps HL passes through the lower chamber window 64 and the susceptor 74, both of which are made of quartz, and is irradiated onto the underside of the semiconductor wafer W. The semiconductor wafer W is preheated by being irradiated with light from the halogen lamps HL, and its temperature rises. Note that the transfer arm 11 of the transfer mechanism 10 is retracted inside the recess 62, so it does not interfere with heating by the halogen lamps HL.

[0088] 10 is a diagram showing the temperature change of a semiconductor wafer W during heat treatment. At time t1, the halogen lamps HL are turned on to start preheating the semiconductor wafer W. The output control of the halogen lamps HL during preheating consists of two stages: a first stage in which open-loop control is performed, and a second stage in which closed-loop control is performed.

[0089] The lower pyrometer 20, which monitors the temperature of the semiconductor wafer W during preheating, cannot accurately measure the temperature of the semiconductor wafer W when the temperature of the semiconductor wafer W is relatively low. In other words, because it is difficult to measure the temperature of the controlled object, closed-loop control is not possible. Therefore, when the temperature of the semiconductor wafer W is relatively low at the beginning of preheating, the controller 3 controls the output of the halogen lamp HL using open-loop control. Specifically, between time t1 and time t2 in FIG. 10, the controller 3 continues to provide a predetermined instruction value to the power regulator 49, and the power regulator 49 supplies power to the halogen lamp HL according to that instruction value. Open-loop control continues until the temperature of the semiconductor wafer W reaches the switching temperature T1. The switching temperature T1 is the temperature at which the temperature of the semiconductor wafer W can be accurately measured by the lower pyrometer 20, and is, for example, between 450°C and 500°C.

[0090] At time t2, when the temperature of the semiconductor wafer W reaches the switching temperature T1, the control switches from open-loop control to closed-loop control. That is, after time t2, the control unit 3 controls the output of the halogen lamps HL using closed-loop control. When closed-loop control is performed, the temperature of the semiconductor wafer W is measured by the lower radiation thermometer 20. That is, the lower radiation thermometer 20 receives infrared light radiated from the bottom surface of the semiconductor wafer W held on the susceptor 74 through the openings 78, through the transparent window 21, and measures the wafer temperature during heating. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3.

[0091] The control unit 3 compares the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 with a target value as indicated by the dashed-dotted line in FIG. 10 and provides an instruction value calculated according to the difference to the power regulator 49. The power regulator 49 adjusts the power supplied to the halogen lamps HL in accordance with the instruction value provided. In other words, the control unit 3 performs closed-loop control (feedback control) of the output of the halogen lamps HL based on the value measured by the lower radiation thermometer 20 so that the temperature of the semiconductor wafer W coincides with the target value. In this way, the lower radiation thermometer 20 is a radiation thermometer for controlling the temperature of the semiconductor wafer W in closed-loop control during preheating.

[0092] As shown by the dashed-dotted line in Figure 10, the target value of the closed-loop control rises at a predetermined rate up to a predetermined preheating temperature T2, and then transitions to maintain a constant value (preheating temperature T2) for a while. In other words, the target temperature for preheating (preheating temperature T2) is also the target value of the closed-loop control. Therefore, if the output of the halogen lamps HL is properly controlled so that the temperature of the semiconductor wafer W matches the target value, the temperature of the semiconductor wafer W will also reach and be maintained at preheating temperature T2.

[0093] In the soak phase (temperature maintenance step) in which the semiconductor wafer W is preheated by the halogen lamps HL, at time t3 immediately before the flash light is irradiated from the flash lamps FL, the comparison unit 38 of the control unit 3 compares the target temperature for preheating (preheating temperature T2) with the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20. Specifically, the comparison unit 38 determines whether the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 is within an allowable range for the target temperature (step S13).

[0094] Such an allowable range may be set in advance in the processing recipe 35 by, for example, an operator of the heat treatment apparatus 1 inputting it through the input unit 32 before starting processing of the target semiconductor wafer W. That is, the input unit 32 accepts the setting input of the allowable range. For example, the allowable range is set to 5°C for a target temperature (preheating temperature T2) of 800°C. In this case, the comparison unit 38 determines whether the measured temperature of the semiconductor wafer W is within the range of 795°C to 805°C. Note that the larger the allowable range is set, the more lenient the determination in step S13 will be.

[0095] If the comparison in step S13 shows that the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 is outside the allowable range for the target temperature, the process proceeds to step S14, where the control unit 3 issues an alarm. Specifically, for example, the control unit 3 may display a warning message on the display unit 33 or may emit a warning sound. Possible causes for the measured temperature of the semiconductor wafer W to be outside the allowable range for the target temperature include, for example, warpage of the semiconductor wafer W, an abnormality in the state of the hardware, and insufficient adjustment of the control parameters in the closed-loop control.

[0096] Next, the control unit 3 stops the processing of the semiconductor wafer W in the heat treatment apparatus 1 (step S15). That is, the control unit 3 stops the processing of the semiconductor wafer W being processed without irradiating it with flash light.

[0097] On the other hand, if the temperature of the semiconductor wafer W measured by the lower pyrometer 20 is within the allowable range for the target temperature, the process proceeds from step S13 to step S16, and a flash of light is irradiated from the flash lamps FL onto the surface of the semiconductor wafer W. The flash of light emitted from the flash lamps FL at time t4 passes through the lamp light emission window 53 and the upper chamber window 63 and reaches the surface of the semiconductor wafer W. The time from time t3, when the target temperature is compared with the measured temperature, to time t4, when the flash of light is irradiated, is less than one second.

[0098] The flash light emitted from the flash lamp FL is an extremely short, intense flash of light with an irradiation time of approximately 0.1 to 100 milliseconds, in which electrostatic energy previously stored in a capacitor is converted into an extremely short light pulse. This extremely short, intense flash light enters the chamber 6 and is irradiated onto the surface of the semiconductor wafer W. As a result, the surface temperature of the semiconductor wafer W momentarily rises to the processing temperature T3 and then rapidly drops.

[0099] At time t5, a predetermined time after the flash heating by flash light irradiation ends, the halogen lamps HL are extinguished. This causes the temperature of the semiconductor wafer W to drop from the preheating temperature T2 (step S17). The temperature of the semiconductor wafer W during this drop is measured by the lower radiation thermometer 20, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors, based on the measurement result of the lower radiation thermometer 20, whether the temperature of the semiconductor wafer W has dropped to a predetermined temperature. After the temperature of the semiconductor wafer W drops below the predetermined temperature, the pair of transfer arms 11 of the transfer mechanism 10 again move horizontally from the retracted position to the transfer operation position and rise, causing the lift pins 12 to protrude from the upper surface of the susceptor 74 and receive the heat-treated semiconductor wafer W from the susceptor 74. Next, the transfer opening 66, which had been closed by the gate valve 185, is opened, and the semiconductor wafer W placed on the lift pins 12 is removed from the chamber 6 by a transfer robot external to the apparatus, completing the heat treatment of the semiconductor wafer W (step S18).

[0100] In the first embodiment, at the final stage of preheating by the halogen lamps HL and immediately before flash light irradiation, the comparison unit 38 compares the target temperature for preheating (preheating temperature T2) with the measured temperature of the semiconductor wafer W measured by the lower radiation thermometer 20. If the measured temperature of the semiconductor wafer W is outside the allowable range for the preset target temperature, the control unit 3 issues an alarm and stops processing of the semiconductor wafer W in question without irradiating it with flash light. In other words, an interlock is provided for when the measured temperature of the semiconductor wafer W does not satisfy the conditions.

[0101] If the measured temperature of the semiconductor wafer W is outside the allowable range for the target temperature, the processing is stopped without irradiating the semiconductor wafer W with flash light, and no subsequent processes are performed on the semiconductor wafer W, and no devices are manufactured. This prevents problems that may occur when flash light irradiation processing is performed on a semiconductor wafer W that has not yet reached the target temperature in preheating.

[0102] Furthermore, since a processing defect is detected and the processing is stopped immediately before the flash light is emitted, it is possible to detect an abnormality at an early stage.

[0103] Furthermore, flash light irradiation is performed after it is confirmed that the temperature of the semiconductor wafer W is within an allowable range for the target temperature, so stable processing results can be achieved.

[0104] Second Embodiment Next, a second embodiment of the present invention will be described. The configuration of the heat treatment apparatus in the second embodiment is the same as that in the first embodiment. Furthermore, the processing procedure for the semiconductor wafer W in the second embodiment is generally the same as that in the first embodiment. In the first embodiment, the measured temperature of the semiconductor wafer W is compared with a target value, whereas in the second embodiment, the output value of the halogen lamp HL is compared with a target value.

[0105] 11 is a flowchart showing the processing procedure of the second embodiment. The processing of steps S21 and S22 of the second embodiment is the same as the processing of steps S11 and S12 of the first embodiment, respectively. That is, after a semiconductor wafer W is carried into the chamber 6 and held by the susceptor 74 of the holder 7, preheating by the halogen lamps HL is initiated. As in the first embodiment, the output control of the halogen lamps HL during preheating is composed of two stages: a first stage in which open-loop control is performed, and a second stage in which closed-loop control is performed.

[0106] In the second embodiment, at time t3 immediately before flash light irradiation, the comparison unit 38 of the control unit 3 compares the target output value of the halogen lamp HL during preheating with the measured output value actually output from the halogen lamp HL. The measured output value actually output from the halogen lamp HL can be obtained from the measurement results of the voltage monitor 47 and current monitor 48 provided in the power regulator 49. The output value of the halogen lamp HL may also be obtained as a ratio to the maximum output. In step S23, the comparison unit 38 determines whether the measured output value of the halogen lamp HL is within an allowable range for the target output value.

[0107] The target output value and tolerance range of the halogen lamps HL during preheating can be set in advance in the processing recipe 35 by the operator of the heat treatment apparatus 1 using the input unit 32, for example, before starting processing of the target semiconductor wafer W. For example, the operator of the heat treatment apparatus 1 inputs 30% as the target output value and 5% as the tolerance range. In this case, the comparison unit 38 determines whether the measured output value of the halogen lamps HL at time t3 is within the range of 25% to 35%.

[0108] If the comparison in step S23 shows that the measured output value of the halogen lamp HL is outside the allowable range for the target output value, the process proceeds to step S24, where the control unit 3 issues an alarm. Subsequently, the control unit 3 stops the process without irradiating the semiconductor wafer W to be processed with flash light (step S25).

[0109] On the other hand, if the measured output value of the halogen lamp HL is within the allowable range for the target output value, the process proceeds from step S23 to step S26, and a flash of light is emitted from the flash lamp FL onto the surface of the semiconductor wafer W. As the semiconductor wafer W is irradiated with a very short irradiation time and high intensity flash of light, the surface temperature of the semiconductor wafer W rises instantaneously to the processing temperature T3 and then drops rapidly.

[0110] At time t5, a predetermined time after the flash heating by flash light irradiation has ended, the halogen lamps HL are turned off. This causes the temperature of the semiconductor wafer W to drop from the preheating temperature T2 (step S27). After the temperature of the semiconductor wafer W drops to a predetermined temperature or lower, the heat-treated semiconductor wafer W is unloaded from the chamber 6, completing the process (step S28).

[0111] In the second embodiment, at the final stage of preheating by the halogen lamp HL, immediately before flash light irradiation, the comparison unit 38 compares the target output value of the halogen lamp HL during preheating with the measured output value actually output from the halogen lamp HL. If the measured output value of the halogen lamp HL is outside the allowable range for the target output value, the control unit 3 issues an alarm and stops processing of the semiconductor wafer W in question without irradiating it with flash light. In other words, an interlock is provided for when the measured output value of the halogen lamp HL does not satisfy the conditions.

[0112] If the measured output value actually output from the halogen lamp HL is outside the allowable range for the target output value, it is highly likely that the temperature of the semiconductor wafer W has not reached the target temperature (preheating temperature T2). In such a case, the process is stopped without irradiating the semiconductor wafer W with flash light, so that subsequent processes are not performed on the semiconductor wafer W and no devices are manufactured. This prevents problems that would occur if flash light irradiation processing were performed on a semiconductor wafer W that has not yet reached the target temperature in preheating.

[0113] Furthermore, as in the first embodiment, a processing defect is detected and the processing is stopped immediately before the flash light is emitted, making it possible to detect an abnormality at an early stage.

[0114] Furthermore, flash light irradiation is performed only after it is confirmed that the measured output value of the halogen lamp HL is within the allowable range for the target output value, thereby achieving stable processing results.

[0115] Third Embodiment Next, a third embodiment of the present invention will be described. The configuration of the heat treatment apparatus in the third embodiment is the same as that in the first embodiment. Furthermore, the processing procedure for the semiconductor wafer W in the third embodiment is generally the same as that in the first embodiment. In the first embodiment, processing was stopped when the measured temperature of the semiconductor wafer W was outside the allowable range for the target temperature, whereas in the third embodiment, processing waits until the measured temperature falls within the allowable range.

[0116] 12 is a flowchart showing the processing procedure of the third embodiment. The processing of steps S31 and S32 of the third embodiment is the same as the processing of steps S11 and S12 of the first embodiment, respectively. That is, after the semiconductor wafer W is carried into the chamber 6 and held by the susceptor 74 of the holder 7, preheating by the halogen lamps HL is started. As in the first embodiment, the output control of the halogen lamps HL during preheating is composed of two stages: a first stage in which open-loop control is performed and a second stage in which closed-loop control is performed.

[0117] In the third embodiment, at time t3 immediately before flash light irradiation, the comparison unit 38 of the control unit 3 compares the target temperature for preheating (preheating temperature T2) with the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20. Specifically, the comparison unit 38 determines whether the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 is within an allowable range for the target temperature (step S33). As in the first embodiment, the operator of the heat treatment apparatus 1 inputs this allowable range via the input unit 32 and sets it in the processing recipe 35 in advance.

[0118] If the comparison in step S33 shows that the temperature of the semiconductor wafer W measured by the lower pyrometer 20 is outside the allowable range for the target temperature, the process proceeds to step S34, where the control unit 3 puts the flash lamps FL on hold while continuing to heat the semiconductor wafer W with the halogen lamps HL. This causes the temperature of the semiconductor wafer W to rise further.

[0119] Next, the control unit 3 determines whether the time elapsed since the start of standby for flash light irradiation has reached the maximum standby time (step S35). This maximum standby time may also be input in advance by the operator of the heat treatment apparatus 1 via the input unit 32. If the time elapsed since the start of standby for flash light irradiation has not reached the maximum standby time, the process returns to step S33, and the processes of steps S33 to S35 are repeated. In other words, the flash light irradiation is suspended until the temperature of the semiconductor wafer W measured by the lower pyrometer 20 reaches within the allowable range for the target temperature.

[0120] FIG. 13 is a diagram illustrating the standby state of flash light irradiation. In the figure, the dotted line indicates the allowable range for the target temperature. At time t3, the temperature of the semiconductor wafer W measured by the lower pyrometer 20 has not yet reached the allowable range for the target temperature. Therefore, the control unit 3 places flash light irradiation on standby and continues heating the semiconductor wafer W with the halogen lamps HL. As a result, the temperature of the semiconductor wafer W rises further and approaches the target temperature.

[0121] Thereafter, the processes of steps S33 to S35 are repeated, and eventually, at time t31, the temperature of the semiconductor wafer W measured by the lower pyrometer 20 reaches within the allowable range for the target temperature. That is, the control unit 3 causes the flash light irradiation to wait from time t3 until time t31, when the measured temperature of the semiconductor wafer W reaches within the allowable range for the target temperature.

[0122] On the other hand, if the measured temperature of the semiconductor wafer W does not fall within the allowable range for the target temperature and the elapsed time since the start of standby for flash light irradiation reaches the maximum standby time, the process proceeds from step S35 to step S36, and the control unit 3 issues an alarm. Next, the control unit 3 stops the processing without irradiating the semiconductor wafer W to be processed with flash light (step S37). The maximum standby time is, for example, approximately 10 seconds.

[0123] FIG. 14 is a diagram illustrating a case where the measured temperature of the semiconductor wafer W does not fall within the allowable range for the target temperature. As in FIG. 13, the allowable range for the target temperature is indicated by a dotted line. At time t3, the temperature of the semiconductor wafer W measured by the lower pyrometer 20 has not yet reached the allowable range for the target temperature. Therefore, the control unit 3 puts flash light irradiation on hold and continues heating the semiconductor wafer W with the halogen lamps HL. As a result, the temperature of the semiconductor wafer W further rises and approaches the target temperature.

[0124] Thereafter, the processes of steps S33 to S35 are repeated, but if the measured temperature of the semiconductor wafer W does not reach the allowable range for the target temperature even at time t32, when the maximum wait time has elapsed since the start of standby for flash light irradiation, the control unit 3 issues an alarm. Then, the control unit 3 stops processing the target semiconductor wafer W without irradiating it with flash light. In other words, if the measured temperature of the semiconductor wafer W does not fall within the allowable range for the target temperature and the elapsed time from time t3, when standby for flash light irradiation began, reaches the maximum wait time, the control unit 3 issues an alarm and stops processing the target semiconductor wafer W.

[0125] On the other hand, if the measured temperature of the semiconductor wafer W reaches within the allowable range for the target temperature before the maximum waiting time has elapsed since the start of standby for flash light irradiation, the process proceeds from step S33 to step S38, and flash light is irradiated from the flash lamps FL onto the surface of the semiconductor wafer W. As a result of the semiconductor wafer W being irradiated with a very short irradiation time and high intensity flash light, the surface temperature of the semiconductor wafer W rises instantaneously to the processing temperature T3 and then drops rapidly.

[0126] The halogen lamps HL are turned off a predetermined time after the flash heating by flash light irradiation is completed. This causes the temperature of the semiconductor wafer W to drop from the preheating temperature T2. In the third embodiment, the temperature is lowered by subtracting the waiting time for the flash light irradiation from the temperature drop time set in advance as the time for lowering the temperature of the semiconductor wafer W (step S39).

[0127] Generally, the process recipe 35 is set with a temperature-lowering phase to which a sufficient time (for example, 30 seconds or more) is allocated. The control unit 3 manages the time by subtracting the time for waiting before flash light irradiation from the time of the temperature-lowering phase, which has sufficient time margin. As a result, the time for cooling the semiconductor wafer W that was originally set in the process recipe 35 is shortened by the time for waiting before flash light irradiation.

[0128] Thereafter, when the time for the temperature-lowering phase, minus the waiting time for flash light irradiation, has elapsed, the heat-treated semiconductor wafer W is unloaded from the chamber 6, and the process is completed (step S40).

[0129] In the third embodiment, at the final stage of preheating by the halogen lamps HL and immediately before flash light irradiation, the comparison unit 38 compares the target temperature for preheating (preheating temperature T2) with the measured temperature of the semiconductor wafer W measured by the lower radiation thermometer 20. If the measured temperature of the semiconductor wafer W is outside the allowable range for the preset target temperature, the irradiation of the flash light is put on hold until the measured temperature of the semiconductor wafer W reaches within the allowable range.

[0130] If the measured temperature of the semiconductor wafer W is outside the allowable range for the target temperature, the flash light irradiation is delayed until the temperature of the semiconductor wafer W reaches the allowable range, thereby preventing the flash light from being irradiated onto semiconductor wafers W that are not within the allowable range. This makes it possible to prevent problems that would occur if the flash light irradiation process were performed on a semiconductor wafer W that has not reached the target temperature in the preheating process.

[0131] Furthermore, since flash light irradiation is performed after the temperature of the semiconductor wafer W has entered an allowable range for the target temperature, stable processing results can be achieved.

[0132] On the other hand, in the third embodiment, if the temperature of the semiconductor wafer W does not reach the above-mentioned allowable range even after the time waiting for flash light irradiation has exceeded a preset maximum waiting time, the processing of the semiconductor wafer W is stopped without flash light irradiation. Because heating by the halogen lamps HL continues even while waiting for flash light irradiation, if the waiting time becomes excessively long, the thermal history (thermal budget) of the semiconductor wafer W becomes too large. For this reason, as in the third embodiment, a maximum waiting time is set in advance, and processing is stopped when the waiting time for flash light irradiation has exceeded that maximum waiting time, thereby preventing the thermal history of the semiconductor wafer W from becoming too large.

[0133] Furthermore, in the third embodiment, the waiting time before flash light irradiation is subtracted from the temperature-reducing time that is preset as the time for reducing the temperature of the semiconductor wafer W after flash light irradiation. This makes it possible to adjust the processing time for one semiconductor wafer W in the heat treatment apparatus 1 to a fixed time as set in the processing recipe 35. Note that although the preset time for reducing the temperature of the semiconductor wafer W is shortened by the waiting time before flash light irradiation, there is no problem because there is sufficient leeway in the time for reducing the temperature of the semiconductor wafer W, even if the time for reducing the temperature is slightly shortened.

[0134] <Modification> Although the embodiments of the present invention have been described above, various modifications can be made to the present invention without departing from the spirit and scope of the invention. For example, in the first embodiment, the measured temperature of the semiconductor wafer W is compared with a target value, and in the second embodiment, the output value of the halogen lamp HL is compared with a target value. However, both of these may be performed. In this case, if the measured temperature of the semiconductor wafer W is outside the allowable range for the target temperature and the measured output value of the halogen lamp HL is outside the allowable range for the target output value, the processing of the semiconductor wafer W may be stopped without irradiating the flash light. Alternatively, if the measured temperature of the semiconductor wafer W is outside the allowable range for the target temperature or the measured output value of the halogen lamp HL is outside the allowable range for the target output value, the processing may be stopped without irradiating the flash light.

[0135] Whether to perform a comparison of the measured temperature of the semiconductor wafer W with a target value or a comparison of the output value of the halogen lamp HL with a target value can be set appropriately in, for example, the process recipe 35. Only one of these may be performed, or both may be performed, or neither may be performed. Note that if only one of these is performed, it is preferable to perform a comparison of the measured temperature of the semiconductor wafer W with a target value.

[0136] Furthermore, the fluctuation time of the open-loop control executed as the first stage of preheating the semiconductor wafer W may be absorbed by a temperature drop time that is preset as the time for dropping the temperature of the semiconductor wafer W. That is, if the time of open-loop control becomes longer, the time for dropping the temperature of the semiconductor wafer W is shortened, and conversely, if the time of open-loop control becomes shorter, the time for dropping the temperature of the semiconductor wafer W is lengthened. In this way, the processing time of the semiconductor wafer W can be made more constant. Note that the closed-loop control executed as the second stage of preheating is a constant time because it is controlled to match a given target value.

[0137] Furthermore, in the above embodiment, the flash heating unit 5 is provided with 30 flash lamps FL, but this is not limited to this and the number of flash lamps FL can be any number. Furthermore, the flash lamps FL are not limited to xenon flash lamps and may be krypton flash lamps. Furthermore, the number of halogen lamps HL provided in the halogen heating unit 4 is not limited to 40 and can be any number.

[0138] Furthermore, in the above embodiment, the semiconductor wafer W is preheated using a filament-type halogen lamp HL as a continuously lit lamp that emits light continuously for one second or more, but this is not limited to this, and preheating may be performed using a discharge arc lamp (e.g., a xenon arc lamp) or an LED lamp as a continuously lit lamp instead of the halogen lamp HL. [Explanation of symbols]

[0139] 1. Heat treatment equipment 3. Control Unit 4 Halogen heating section 5 Flash heating section 6 chambers 7 Holding part 10 Transfer mechanism 20 Lower radiation thermometer 25 Upper radiation thermometer 32 Input section 34 Storage section 35 Processing Recipes 38 Comparison Section 49 Power regulator 63 Upper chamber window 64 Lower chamber window 65 Heat Treatment Space 74 Susceptor FL flash lamp HL halogen lamp W Semiconductor wafer

Claims

1. A heat treatment method for heating a substrate by irradiating the substrate with flash light, comprising: a preheating step of preheating the substrate by irradiating the substrate accommodated in the chamber with light from a continuously lit lamp; a flash heating step of irradiating a surface of the substrate with flash light from a flash lamp to raise the temperature of the surface of the substrate after the preheating step; a temperature-reducing step of reducing the temperature of the substrate in the chamber after the flash heating step; Equipped with a target temperature in the preheating step and a measured temperature of the substrate measured by a radiation thermometer are compared, and if the measured temperature is outside an allowable range for the target temperature, the processing of the substrate is stopped without irradiating the flash light.

2. The heat treatment method according to claim 1, the preheating step includes a step of performing closed-loop control of the output of the continuously lit lamp; The heat treatment method, wherein the target temperature is a target value for the closed-loop control.

3. The heat treatment method according to claim 1 or 2, The heat treatment method further comprises a setting step of setting the tolerance range before starting processing on the substrate.

4. A heat treatment method for heating a substrate by irradiating the substrate with flash light, comprising: a preheating step of preheating the substrate by irradiating the substrate accommodated in the chamber with light from a continuously lit lamp; a flash heating step of irradiating a surface of the substrate with flash light from a flash lamp to raise the temperature of the surface of the substrate after the preheating step; a temperature-reducing step of reducing the temperature of the substrate in the chamber after the flash heating step; Equipped with a target output value of the continuously lit lamp in the preheating step and a measured output value output from the continuously lit lamp are compared, and if the measured output value is outside an allowable range for the target output value, processing of the substrate is stopped without irradiating the flash light.

5. The heat treatment method according to claim 4, a target temperature in the preheating step and a measured temperature of the substrate measured by a radiation thermometer are compared, and if the measured temperature is outside an allowable range for the target temperature, the processing of the substrate is stopped without irradiating the flash light.

6. The heat treatment method according to claim 4 or 5, The thermal processing method further comprises a setting step of setting an allowable range for the target output value before starting processing on the substrate.

7. A heat treatment method for heating a substrate by irradiating the substrate with flash light, comprising: a preheating step of preheating the substrate by irradiating the substrate accommodated in the chamber with light from a continuously lit lamp; a flash heating step of irradiating a surface of the substrate with flash light from a flash lamp to raise the temperature of the surface of the substrate after the preheating step; a temperature-reducing step of reducing the temperature of the substrate in the chamber after the flash heating step; Equipped with a target temperature in the preheating step and a measured temperature of the substrate measured by a radiation thermometer are compared, and if the measured temperature is outside an allowable range for the target temperature, irradiation of the flash light is put on hold until the measured temperature reaches the allowable range.

8. The heat treatment method according to claim 7, a heat treatment method in which, when a waiting time for irradiation of the flash light has elapsed a preset maximum waiting time, the treatment of the substrate is stopped without irradiating the flash light;

9. The heat treatment method according to claim 7, The heat treatment method includes subtracting a waiting time for the irradiation of the flash light from a temperature drop time set in advance as a time for lowering the temperature of the substrate in the temperature drop step.

10. The heat treatment method according to any one of claims 7 to 9, The heat treatment method further comprises a setting step of setting the tolerance range before starting processing on the substrate.

11. A heat treatment apparatus for heating a substrate by irradiating the substrate with flash light, a chamber for housing the substrate; a continuously lit lamp that irradiates light onto the substrate accommodated in the chamber to preheat the substrate; a flash lamp for irradiating a preheated surface of the substrate with flash light to raise the temperature of the surface of the substrate; a radiation thermometer for measuring the temperature of the substrate; a control unit that compares a target temperature in the preheating with a temperature of the substrate measured by the radiation thermometer, and stops processing of the substrate without irradiating the substrate with the flash light when the measured temperature is outside an allowable range for the target temperature; A heat treatment device comprising:

12. 12. The heat treatment apparatus according to claim 11, In the preheating, the output of the continuously lit lamp is controlled in a closed loop; The heat treatment apparatus, wherein the target temperature is a target value of the closed-loop control.

13. 13. The heat treatment apparatus according to claim 11 or 12, The heat treatment apparatus further comprises an input unit that receives a setting input of the tolerance range before starting the treatment of the substrate.

14. A heat treatment apparatus for heating a substrate by irradiating the substrate with flash light, a chamber for housing the substrate; a continuously lit lamp that irradiates light onto the substrate accommodated in the chamber to preheat the substrate; a flash lamp for irradiating a preheated surface of the substrate with flash light to raise the temperature of the surface of the substrate; a radiation thermometer for measuring the temperature of the substrate; a control unit that compares a target output value of the continuously lit lamp in the preheating with a measured output value output from the continuously lit lamp, and stops processing of the substrate without irradiating the substrate with the flash light when the measured output value is outside an allowable range for the target output value; A heat treatment device comprising:

15. 15. The heat treatment apparatus according to claim 14, The control unit compares the target temperature during the preheating with the measured temperature of the substrate measured by the radiation thermometer, and if the measured temperature is outside an allowable range for the target temperature, stops processing of the substrate without irradiating it with the flash light.

16. 16. The heat treatment apparatus according to claim 14 or 15, The heat treatment apparatus further comprises an input unit that receives a setting input of an allowable range for the target output value before starting processing on the substrate.

17. A heat treatment apparatus for heating a substrate by irradiating the substrate with flash light, a chamber for housing the substrate; a continuously lit lamp that irradiates light onto the substrate accommodated in the chamber to preheat the substrate; a flash lamp for irradiating a preheated surface of the substrate with flash light to raise the temperature of the surface of the substrate; a radiation thermometer for measuring the temperature of the substrate; a control unit that compares a target temperature in the preheating with a temperature of the substrate measured by the radiation thermometer, and when the measured temperature is outside an allowable range for the target temperature, causes irradiation of the flash light to wait until the measured temperature reaches the allowable range; A heat treatment device comprising:

18. 18. The heat treatment apparatus according to claim 17, The control unit stops processing of the substrate without irradiating the flash light when a time for waiting for irradiation of the flash light exceeds a preset maximum waiting time.

19. 18. The heat treatment apparatus according to claim 17, The control unit subtracts a time for waiting the irradiation of the flash light from a temperature reduction time that is preset as a time for reducing the temperature of the substrate after the irradiation of the flash light.

20. 20. The heat treatment apparatus according to claim 17, The heat treatment apparatus further comprises an input unit that receives a setting input of the tolerance range before starting the treatment of the substrate.

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