Light-emitting device and method for manufacturing the same

Abstract

To provide a light-emitting device and a method for manufacturing the same that can improve water resistance.SOLUTION: A light-emitting element 1 has a semiconductor laminate structure and includes a semiconductor laminate portion 2 that emits light, an inorganic coating portion 5 made of an inorganic material that covers the semiconductor laminate portion 2, and an organic coating portion 6 made of an organic material that covers the inorganic coating portion 5.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting element and a method for manufacturing the same. [Background technology]

[0002] Patent Document 1 discloses a light emitting device in which a semiconductor laminated portion including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer is covered with an inorganic covering portion made of an inorganic material such as silicon oxide (SiO 2 ). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-106406 Summary of the Invention [Problem to be solved by the invention]

[0004] In the light-emitting element described in Patent Document 1, an inorganic coating made of an inorganic material covers the semiconductor laminate, but cracks may occur in the inorganic coating starting from steps and corners on the surface of the semiconductor laminate, and moisture may reach the vicinity of the semiconductor laminate through these cracks.

[0005] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light-emitting element capable of improving water resistance and a method for manufacturing the light-emitting element. [Means for solving the problem]

[0006] In order to achieve the above-mentioned object, the present invention provides a light-emitting element having a semiconductor laminate structure and including: a semiconductor laminate portion that emits light; an inorganic coating portion made of an inorganic material that covers the semiconductor laminate portion; and an organic coating portion made of an organic material that covers the inorganic coating portion.

[0007] In addition, in order to achieve the above-mentioned object, the present invention provides a method for manufacturing a light-emitting element, which includes forming a semiconductor laminate portion that is formed by laminating semiconductors and that emits light, forming an inorganic coating portion made of an inorganic material to cover the semiconductor laminate portion, and forming an organic coating portion made of an organic material to cover the inorganic coating portion. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a light emitting device capable of improving water resistance and a method for manufacturing the light emitting device. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 2 is a plan view of a light-emitting element according to the embodiment. [Figure 2] 4 is a cross-sectional view of a semiconductor laminate obtained in a semiconductor laminate formation step according to the embodiment. FIG. [Figure 3] FIG. 3 is a cross-sectional view of a first intermediate obtained in a first vapor deposition step in the embodiment. [Figure 4] FIG. 4 is a cross-sectional view of a second intermediate body obtained in a first covering step in the embodiment. [Figure 5] FIG. 4 is a cross-sectional view of a third intermediate obtained in a second covering step in the embodiment. [Figure 6] FIG. 10 is a cross-sectional view of a fourth intermediate obtained in an etching step in the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010] [Embodiment Mode] Embodiments of the present invention will be described with reference to Figures 1 to 6. The embodiments described below are shown as preferred specific examples for carrying out the present invention, and although some of the embodiments specifically exemplify various technically preferred aspects, the technical scope of the present invention is not limited to these specific embodiments.

[0011] (Light-emitting element 1) FIG. 1 is a plan view of a light emitting device 1 in this embodiment.

[0012] The light-emitting element 1 of this embodiment is, for example, a light-emitting diode (LED) or a semiconductor laser (LD). In this embodiment, the light-emitting element 1 is an LED that emits ultraviolet light and can be used in fields such as sterilization (e.g., air purification, water purification, etc.), medical treatment (e.g., phototherapy, measurement and analysis, etc.), UV curing, etc. As shown in FIG. 2 , the light-emitting element 1 of this embodiment includes a semiconductor laminate portion 2, an n-side contact electrode 3, a p-side contact electrode 4, an inorganic coating portion 5, an organic coating portion 6, an n-side pad electrode 7, and a p-side pad electrode 8.

[0013] The semiconductor laminate 2 has a substrate 21, a buffer layer 22, an n-type semiconductor layer 23, a light-emitting layer 24, and a p-type semiconductor layer 25, in this order. Hereinafter, the stacking direction of the layers of the semiconductor laminate 2 (for example, the vertical direction in FIG. 1) will be referred to as the vertical direction, and one side of the vertical direction, where the semiconductor layers are stacked with respect to the substrate 21 (for example, the upper side in FIG. 1), will be referred to as the upper side, and the opposite side (for example, the lower side in FIG. 1) will be referred to as the lower side. Note that the expressions "upper" and "lower" are used for convenience and do not limit the orientation of the light-emitting element 1 relative to the vertical direction, for example, when the light-emitting element 1 is in use.

[0014] The substrate 21 is a substrate that has a property of transmitting light (deep ultraviolet light in this embodiment) emitted by the light-emitting layer 24, and can be, for example, a sapphire (Al2O3) substrate. Alternatively, the substrate 21 may be, for example, an aluminum nitride (AlN) substrate or an aluminum gallium nitride (AlGaN) substrate.

[0015] The semiconductors constituting the buffer layer 22, the n-type semiconductor layer 23, the light emitting layer 24, and the p-type semiconductor layer 25 are, for example, Al x Ga y In 1-x-yAn II - IV group nitride semiconductor represented by N(0≦x≦1, 0≦y≦1, 0≦x + y≦1) can be used. In this embodiment, as the semiconductors constituting the buffer layer 22, the n - type semiconductor layer 23, the light - emitting layer 24, and the p - type semiconductor layer 25, an indium - free Al z Ga 1-z N - based (0≦z≦1) semiconductor is used.

[0016] The buffer layer 22 is formed on the substrate 21. The buffer layer 22 is made of undoped Al a Ga 1-a N(0≦a≦1). As an example, the buffer layer 22 has an AlN layer made of aluminum nitride (i.e., a = 1) formed on the substrate 21 and an undoped aluminum gallium nitride (i.e., 0 < a < 1) AlGaN layer formed on the AlN layer. Note that it is not limited to this, and the buffer layer 22 can also be a single layer. Also, when the substrate 21 is an aluminum nitride substrate or an aluminum gallium nitride substrate, the buffer layer 22 does not necessarily have to be provided.

[0017] The n - type semiconductor layer 23 is formed on the buffer layer​​​​​​​​​​​N (0≦c≦1), and may be, for example, a single quantum well structure having one well layer or a multiple quantum well structure having multiple well layers. In the light emitting layer 24, electrons supplied from the n-type semiconductor layer 23 and holes supplied from the p-type semiconductor layer 25 recombine to emit light. The light emitting layer 24 is configured to have a band gap of 3.4 eV or more to output ultraviolet light having a wavelength of 365 nm or less. In particular, in this embodiment, the light emitting layer 24 is configured to emit ultraviolet light having a center wavelength of 200 nm or more and 365 nm or less. Alternatively, the light emitting layer 24 may emit deep ultraviolet light having a center wavelength of 280 nm or less.

[0019] The p-type semiconductor layer 25 is formed on the light emitting layer 24. The p-type semiconductor layer 25 is made of Al doped with p-type impurities. d Ga 1-d N (0≦d≦1). The p-type semiconductor layer 25 may have a single layer structure or a multi-layer structure. The semiconductor laminate portion 2 is configured as described above.

[0020] The n-side contact electrode 3 is formed on an exposed upper surface 231 of the n-type semiconductor layer 23 on which the light-emitting layer 24 is not formed. The n-side contact electrode 3 is in ohmic contact with the n-type semiconductor layer 23. The upper surface of the n-side contact electrode 3 is formed at the same vertical position as the upper surface of the p-side contact electrode 4. Note that "formed at the same vertical position as the upper surfaces of the n-side contact electrode 3 and the p-side contact electrode 4" refers to the fact that the upper surfaces of the n-side contact electrode 3 and the p-side contact electrode 4 are designed to be formed at the same vertical position, but this also includes cases where their vertical positions are slightly misaligned due to manufacturing tolerances, etc. The n-side contact electrode 3 may have a single-layer structure or a multi-layer structure.

[0021] The p-side contact electrode 4 is formed on the upper surface of the p-type semiconductor layer 25. The p-side contact electrode 4 is in ohmic contact with the p-type semiconductor layer 25. The p-side contact electrode 4 may be made of a material capable of reflecting light emitted by the light emitting layer 24. In this case, the p-side contact electrode 4 preferably has a reflectance of 50% or more, and more preferably 70% or more, at the center wavelength of light emitted by the light emitting layer 24. The p-side contact electrode 4 may have a single-layer structure or a multi-layer structure.

[0022] The inorganic covering portion 5 covers the upper surface of the buffer layer 22 in the semiconductor laminate portion 2, from the upper surface 221 onwards, as well as the surfaces of the n-side contact electrode 3 and the p-side contact electrode 4. The inorganic covering portion 5 is made of an inorganic material that is electrically insulating and difficult for moisture to pass through. For example, the inorganic covering portion 5 is made of silicon dioxide (SiO2), silicon nitride (Si3N4), or the like.

[0023] The inorganic covering portion 5 is formed up to above the n-side contact electrode 3 and the p-side contact electrode 4. When viewing a cross section of the light-emitting element 1 perpendicular to the vertical direction (for example, FIG. 1), the side surface 51 of the inorganic covering portion 5 is formed in a position that is located inside the side surface 211 of the substrate 21 and the side surface 222 of the buffer layer 22 in the direction perpendicular to the vertical direction.

[0024] The organic coating portion 6 covers the side surface 51 and top surface 52 of the inorganic coating portion 5. The organic coating portion 6 covers the inorganic coating portion 5 so that the inorganic coating portion 5 is not exposed to the outside of the light-emitting element 1. The surface of the organic coating portion 6 opposite the inorganic coating portion 5 (i.e., the top surface 62 and the side surface 61) is exposed to the outside of the light-emitting element 1. The organic coating portion 6 is formed to a constant thickness. The thickness of the organic coating portion 6 can be, for example, 0.1 μm or more and 10.0 μm or less. The side surface 61 of the organic coating portion 6 is aligned with the side surface 211 of the substrate 21 and the side surface 222 of the buffer layer 22.

[0025] The organic coating portion 6 is made of an electrically insulating organic polymer material. In this embodiment, the organic coating portion 6 contains a polymer of a coupling agent having both hydrophobic and hydrophilic groups. This facilitates adhesion between the organic coating portion 6 and the inorganic coating portion 5 on the surface facing the inorganic coating portion 5, and facilitates hydrophobicity on the surface opposite the inorganic coating portion 5. Silane coupling agents are preferred as coupling agents for the organic coating portion 6, with vinylsilane coupling being particularly preferred. Examples of vinylsilane coupling agents include vinyltrimethoxysilane ((CHO)SiCH=CH) and vinyltriethoxysilane ((CHO)SiCH=CH). In the case of vinyltrimethoxysilane, Si(CHO) is the hydrophilic group and CH=CH is the hydrophobic group. In the case of vinyltriethoxysilane, Si(CHO) is the hydrophilic group and CH=CH is the hydrophobic group.

[0026] Although the organic coating portion 6 is a polymer of a vinyl silane coupling agent, the present invention is not limited to this. For example, a silane coupling agent having a functional group such as an epoxy group, a styryl group, a methacrylic group, an acrylic group, an amino group, an isocyanurate group, a ureido group, a mercapto group, an isocyanate group, or an acid anhydride group may be used. Furthermore, the organic coating portion 6 may be a polymer of a coupling agent other than a silane coupling agent, or an organic resin other than a polymer of a coupling agent.

[0027] The inorganic coating portion 5 has a first n-side hole 53 formed to open to the n-side contact electrode 3 and a first p-side hole 54 formed to open to the p-side contact electrode 4. The organic coating portion 6 has a second n-side hole 63 formed in a region overlapping the region where the first n-side hole 53 is formed and a second p-side hole 64 formed in a region overlapping the region where the first p-side hole 54 is formed. The first n-side hole 53 and the second n-side hole 63 are formed in positions where they entirely overlap each other in the vertical direction, and the first p-side hole 54 and the second p-side hole 64 are formed in positions where they entirely overlap each other in the vertical direction. An n-side pad electrode 7 is formed so as to partially fill the first n-side hole 53 and the second n-side hole 63, and a p-side pad electrode 8 is formed so as to partially fill the first p-side hole 54 and the second p-side hole 64.

[0028] The n-side pad electrode 7 is electrically connected to the n-side contact electrode 3. The n-side pad electrode 7 has an n-side filling portion 71 that fills the first n-side hole 53 and the second n-side hole 63, and an n-side exposed portion 72 that is exposed upward from the filling portion. The lower end of the n-side filling portion 71 is connected to the upper surface of the n-side contact electrode 3. The lower surface of the n-side exposed portion 72 is formed on the upper surface 62 of the organic coating portion 6.

[0029] The p-side pad electrode 8 is electrically connected to the p-side contact electrode 4. The p-side pad electrode 8 has a p-side filling portion 81 that fills the first p-side hole 54 and the second p-side hole 64, and a p-side exposed portion 82 that is exposed upward from the filling portion. The lower end of the p-side filling portion 81 is connected to the upper surface of the p-side contact electrode 4. The lower surface of the p-side exposed portion 82 is formed on the upper surface 62 of the organic coating portion 6.

[0030] The upper surfaces of the n-side exposed portion 72 and the p-side exposed portion 82 are electrically connected to an external mounting substrate (e.g., a submount substrate) not shown. For example, the light-emitting element 1 is flip-chip mounted to electrodes of the mounting substrate via bonding members such as gold (Au) bumps, with the substrate 21 positioned on the opposite side from the mounting substrate.

[0031] (Method of manufacturing the light-emitting element 1) Next, an example of a method for manufacturing the light emitting device 1 of this embodiment will be described. The method for manufacturing the light-emitting element 1 includes a semiconductor laminate forming step, a first vapor deposition step, a first covering step, a second covering step, an etching step, and a second vapor deposition step.

[0032] 2 is a cross-sectional view of a semiconductor laminate 2 obtained in the semiconductor laminate formation process. In the semiconductor laminate formation process, first, a buffer layer 22, an n-type semiconductor layer 23, a light-emitting layer 24, and a p-type semiconductor layer 25 are epitaxially grown in this order on a substrate 21. Known epitaxial growth methods such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and halide vapor phase epitaxy (HVPE) can be used. The manufacturing conditions for epitaxially growing each layer, such as growth temperature, growth pressure, and growth time, can be general conditions appropriate for the configuration of each layer.

[0033] Next, a mask (not shown) is formed at predetermined locations on the upper surface of the p-type semiconductor layer 25. Then, the p-type semiconductor layer 25 and the light emitting layer 24 formed in positions that do not overlap with the mask in the vertical direction are removed by etching. As a result, an exposed upper surface 231 is formed in the n-type semiconductor layer 23, which is exposed upward from the light emitting layer 24. After the exposed upper surface 231 is formed, the mask is removed, thereby obtaining the semiconductor laminate portion 2 as shown in FIG.

[0034] Next, a first vapor deposition step is performed. FIG. 3 is a cross-sectional view of a first intermediate body 11 obtained in the first vapor deposition step. The first vapor deposition step is a step of forming an n-side contact electrode 3 on the exposed upper surface 231 of the n-type semiconductor layer 23 and forming a p-side contact electrode 4 on the upper surface of the p-type semiconductor layer 25. In the first vapor deposition step, the n-side contact electrode 3 and the p-side contact electrode 4 can be formed by vapor deposition using a known lithography technique or the like. Electron beam vapor deposition, sputtering, or the like can be used for the vapor deposition. The first vapor deposition step results in the first intermediate body 11 shown in FIG. 3 being obtained.

[0035] Next, a first coating step is performed. Fig. 4 is a cross-sectional view of the second intermediate 12 obtained in the first coating step. The first coating step is a step of forming an inorganic coating portion 5. In the first coating step, the surface of the first intermediate 11 that is exposed above the upper surface 221 of the buffer layer 22 is covered with an inorganic material such as silicon dioxide using a well-known technique such as chemical vapor deposition (CVD), thereby forming the inorganic coating portion 5. The second intermediate 12 shown in Fig. 4 is obtained by the first coating step.

[0036] Next, the second coating step is performed. FIG. 5 is a cross-sectional view of the third intermediate 13 obtained in the second coating step. The second coating step is a step of forming the organic coating portion 6. In the second coating step, a mixed solution is first prepared by mixing a silane coupling agent and a radical polymerization initiator (e.g., a known one). The mixed solution is then applied to the entire upper surface 52 and side surface 51 of the inorganic coating portion 5 by spin coating or the like, and dried. The hydrophilic groups of the silane coupling agent are hydrolyzed to generate silanol groups. These silanol groups react with hydroxyl groups on the surface of the inorganic coating portion 5 (e.g., a condensation reaction), thereby chemically bonding to the surface of the inorganic coating portion 5. In parallel with this reaction, the silanol groups condense with each other, and the double bonds of the hydrophobic groups open, causing a radical polymerization reaction to proceed, thereby forming the organic coating portion 6. The above-mentioned reaction is accelerated by applying heat or light to the mixed solution applied to the upper surface 52 and side surface 51 of the inorganic coating portion 5. The second coating step yields a third intermediate 13 shown in FIG.

[0037] Next, an etching step is performed. FIG. 6 is a cross-sectional view of a fourth intermediate 14 obtained in the etching step. The etching step is a step of forming a second n-side hole 63 and a second p-side hole 64 in the organic coating portion 6, and forming a first n-side hole 53 and a first p-side hole 54 in the inorganic coating portion 5. In the etching step, a mask (not shown) is formed on the upper surface 62 of the organic coating portion 6 in areas where the second n-side hole 63 and the second p-side hole 64 will not be formed. Then, dry etching is continued until the second n-side hole 63 and the second p-side hole 64 are formed in the organic coating portion 6, and the first n-side hole 53 and the first p-side hole 54 are formed in the organic coating portion 6. As a result, the second n-side hole 63 and the first n-side hole 53 are formed continuously and collectively, and similarly, the second p-side hole 64 and the first p-side hole 54 are formed continuously and collectively. Furthermore, the second n-side hole 63 and the first n-side hole 53 are formed in positions where they completely overlap each other in the vertical direction, and the second p-side hole 64 and the first p-side hole 54 are formed in positions where they completely overlap each other in the vertical direction. The mask is then removed. The second covering step results in a fourth intermediate 14 shown in FIG. 6.

[0038] Next, a second vapor deposition process is performed. The second vapor deposition process is a process for forming the n-side pad electrode 7 and the p-side pad electrode 8. In the second vapor deposition process, the n-side pad electrode 7 and the p-side pad electrode 8 are formed by vapor deposition using a known lithography technique or the like. As the vapor deposition, an electron beam vapor deposition method, a sputtering method or the like can be used. In this way, the light-emitting element 1 shown in FIG. 1 is obtained.

[0039] (Actions and Effects of the Embodiments) The light-emitting element 1 has a semiconductor laminate structure and includes a semiconductor laminate 2 that emits light, an inorganic coating 5 made of an inorganic material that covers the semiconductor laminate 2, and an organic coating 6 made of an organic material that covers the inorganic coating 5. This prevents moisture from reaching the vicinity of the semiconductor laminate 2.

[0040] The inorganic coating portion 5 is formed with a first n-side hole 53 that opens to the n-side contact electrode 3 and a first p-side hole 54 that opens to the p-side contact electrode 4. The organic coating portion 6 is formed with a second n-side hole 63 that is formed in a region overlapping the formation region of the first n-side hole 53 and a second p-side hole 64 that is formed in a region overlapping the formation region of the first p-side hole 54. A portion of the n-side pad electrode 7 fills the first n-side hole 53 and the second n-side hole 63, and a portion of the p-side pad electrode 8 fills the first p-side hole 54 and the second p-side hole 64. Forming the first n-side hole 53 and the second n-side hole 63 at positions that overlap each other in the vertical direction in this way facilitates their formation. The same applies to the first p-side hole 54 and the second p-side hole 64.

[0041] The organic coating portion 6 also contains a polymer of a coupling agent, which makes it easier to ensure adhesion of the organic coating portion 6 to the inorganic coating portion 5 and also makes it easier to ensure hydrophobicity on the surface opposite to the inorganic coating portion 5.

[0042] The coupling agent is a silane coupling agent. The silane coupling agent contains Si in the hydrophilic group, and has a high affinity with the inorganic coating portion 5. Therefore, the hydrophilic groups are likely to be arranged on the inorganic coating portion 5 side, and the hydrophobic groups are likely to be arranged on the opposite side of the inorganic coating portion 5 so as to form a pair with the inorganic coating portion 5. As a result, the water resistance of the light-emitting element 1 is further improved.

[0043] The silane coupling agent is a vinyl silane coupling agent. Adding a photopolymerization initiator to the vinyl silane coupling agent and polymerizing it forms a stronger organic coating portion 6. Furthermore, because this polymerization reaction is not a dehydration reaction, the polymerized organic coating portion 6 is prevented from being destroyed by moisture.

[0044] Furthermore, in the manufacturing method of the light-emitting element 1, the 2nd n-side hole 63 and the 1st n-side hole 53 are formed collectively by etching the organic coating portion 6 and the inorganic coating portion 5, and the 2nd p-side hole 64 and the 1st p-side hole 54 are formed collectively by etching the organic coating portion 6 and the inorganic coating portion 5. This simplifies the manufacturing process of the light-emitting element 1.

[0045] As described above, according to the present embodiment, it is possible to provide a light emitting device capable of improving water resistance and a method for manufacturing the light emitting device.

[0046] (Summary of the embodiment) Next, the technical ideas grasped from the above-described embodiments will be described by using the reference numerals and the like in the embodiments. However, the reference numerals and the like in the following description do not limit the components in the claims to the members and the like specifically shown in the embodiments.

[0047] [1] A first embodiment of the present invention is a light-emitting element 1 having a semiconductor laminate structure and including a semiconductor laminate portion 2 that emits light, an inorganic coating portion 5 made of an inorganic material that covers the semiconductor laminate portion 2, and an organic coating portion 6 made of an organic material that covers the inorganic coating portion 5. This prevents moisture from reaching the vicinity of the semiconductor laminate portion 2.

[0048] [2] A second embodiment of the present invention is the first embodiment, wherein the semiconductor laminate portion 2 comprises an n-type semiconductor layer 23, a light emitting layer 24 formed on the n-type semiconductor layer 23, and a p-type semiconductor layer 25 formed on the light emitting layer 24, the light emitting element 1 further comprises an n-side contact electrode 3 formed on the n-type semiconductor layer 23, an n-side pad electrode 7 formed on the n-side contact electrode 3, a p-side contact electrode 4 formed on the p-type semiconductor layer 25, and a p-side pad electrode 8 formed on the p-side contact electrode 4, The organic coating portion 6 has a first n-side hole 53 formed to open to the p-side contact electrode 4, and a first p-side hole 54 formed to open to the p-side contact electrode 4, and the organic coating portion 6 has a second n-side hole 63 formed in a region overlapping with the formation region of the first n-side hole 53, and a second p-side hole 64 formed in a region overlapping with the formation region of the first p-side hole 54, and a portion of the n-side pad electrode 7 is filled in the first n-side hole 53 and the second n-side hole 63, and a portion of the p-side pad electrode 8 is filled in the first p-side hole 54 and the second p-side hole 64. This makes it easy to form the first n-side hole 53 and the second n-side hole 63, and the first p-side hole 54 and the second p-side hole 64.

[0049] [3] A third embodiment of the present invention is the first or second embodiment, in which the organic coating portion 6 contains a polymer of a coupling agent. This makes it easier to ensure that the organic coating portion 6 adheres to the inorganic coating portion 5, and also makes it easier to ensure that the surface opposite to the inorganic coating portion 5 is hydrophobic.

[0050] [4] A fourth embodiment of the present invention is the third embodiment, wherein the coupling agent is a silane coupling agent. This further improves the water resistance of the light emitting element 1.

[0051] [5] A fifth embodiment of the present invention is the fourth embodiment, wherein the silane coupling agent is a vinyl silane coupling agent. This makes the organic coating portion 6 stronger.

[0052] [6] A sixth embodiment of the present invention is a method for manufacturing a light-emitting element 1, which includes forming a semiconductor laminate 2 that is made by laminating semiconductors and emits light, forming an inorganic coating 5 made of an inorganic material to cover the semiconductor laminate 2, and forming an organic coating 6 made of an organic material to cover the inorganic coating 5. This makes it possible to manufacture a light emitting element 1 in which moisture is prevented from reaching the vicinity of the semiconductor laminate portion 2.

[0053] [7] A seventh embodiment of the present invention is the sixth embodiment, wherein in the step of forming the semiconductor laminate portion 2, an n-type semiconductor layer 23, a light-emitting layer 24 formed on the n-type semiconductor layer 23, and a p-type semiconductor layer 25 formed on the light-emitting layer 24 are formed, and the manufacturing method of the light-emitting element 1 includes forming an n-side contact electrode 3 on the n-type semiconductor layer 23, forming a p-side contact electrode 4 on the p-type semiconductor layer 25, forming a first n-side hole 53 formed to open to the n-side contact electrode 3 and a first p-side hole 54 formed to open to the p-side contact electrode 4 in the inorganic covering portion 5, and forming a region in the organic covering portion 6 that overlaps with a region where the first n-side hole 53 is formed. and a second p-side hole 64 formed in a region overlapping with the formation region of the first p-side hole 54, forming an n-side pad electrode 7 so as to partially fill the first n-side hole 53 and the second n-side hole 63, and forming a p-side pad electrode 8 so as to partially fill the first p-side hole 54 and the second p-side hole 64, wherein the second n-side hole 63 and the first n-side hole 53 are formed collectively by etching the organic coating portion 6 and the inorganic coating portion 5, and the second p-side hole 64 and the first p-side hole 54 are formed collectively by etching the organic coating portion 6 and the inorganic coating portion 5. This simplifies the manufacturing process of the light-emitting device 1.

[0054] [8] The eighth embodiment of the present invention is that in the sixth or seventh embodiment, when forming the organic coating portion 6, a coupling agent that is the material for the organic coating portion 6 is applied to the surface of the inorganic coating portion 5 and a polymerization reaction is caused to occur, thereby forming the organic coating portion 6. This simplifies the manufacturing process of the light-emitting device 1.

[0055] (Addendum) Although the embodiments of the present invention have been described above, the invention according to the claims is not limited to the above-described embodiments. It should be noted that not all of the combinations of features described in the embodiments are necessarily essential to the means for solving the problems of the invention. Furthermore, the present invention can be appropriately modified and implemented within the scope of its spirit. [Explanation of symbols]

[0056] 1...Light emitting element 2...Semiconductor laminate 23...n-type semiconductor layer 24...Emitting layer 25...p-type semiconductor layer 3...N-side contact electrode 4...p-side contact electrode 5...Inorganic coating part 53…1st n side hole part 54…1st p side hole part 6...Organic coating part 63…2nd n side hole part 64…2nd p side hole part 7...N-side pad electrode 8...p-side pad electrode

Claims

1. a semiconductor laminate portion having a semiconductor laminate structure and emitting light; an inorganic covering portion made of an inorganic material that covers the semiconductor laminate portion; an organic coating portion made of an organic material that covers the inorganic coating portion; Light-emitting element.

2. the semiconductor laminate portion includes an n-type semiconductor layer, a light emitting layer formed on the n-type semiconductor layer, and a p-type semiconductor layer formed on the light emitting layer, The light-emitting element is an n-side contact electrode formed on the n-type semiconductor layer; an n-side pad electrode formed on the n-side contact electrode; a p-side contact electrode formed on the p-type semiconductor layer; a p-side pad electrode formed on the p-side contact electrode, a first n-side hole formed in the inorganic covering portion so as to open to the n-side contact electrode and a first p-side hole formed in the inorganic covering portion so as to open to the p-side contact electrode; a second n-side hole formed in a region overlapping with a region where the first n-side hole is formed, and a second p-side hole formed in a region overlapping with a region where the first p-side hole is formed, a portion of the n-side pad electrode is filled in the first n-side hole and the second n-side hole; a portion of the p-side pad electrode filling the first p-side hole and the second p-side hole; The light-emitting device according to claim 1 .

3. The organic coating portion contains a polymer of a coupling agent. The light-emitting device according to claim 1 or 2.

4. The coupling agent is a silane coupling agent. The light-emitting device according to claim 3 .

5. The silane coupling agent is a vinyl silane coupling agent. The light-emitting device according to claim 4 .

6. forming a semiconductor laminated portion that is formed by laminating semiconductors and that emits light; forming an inorganic covering portion made of an inorganic material so as to cover the semiconductor laminate portion; forming an organic coating portion made of an organic material so as to cover the inorganic coating portion; A method for manufacturing a light-emitting device.

7. In the step of forming the semiconductor laminate portion, an n-type semiconductor layer, a light emitting layer formed on the n-type semiconductor layer, and a p-type semiconductor layer formed on the light emitting layer are formed; The method for manufacturing the light-emitting element includes: forming an n-side contact electrode on the n-type semiconductor layer; forming a p-side contact electrode on the p-type semiconductor layer; a first n-side hole formed in the inorganic covering portion so as to open to the n-side contact electrode and a first p-side hole formed in the inorganic covering portion so as to open to the p-side contact electrode; a second n-side hole formed in a region overlapping with a region where the first n-side hole is formed, and a second p-side hole formed in a region overlapping with a region where the first p-side hole is formed, in the organic coating portion; forming an n-side pad electrode so as to fill a portion of the first n-side hole and the second n-side hole; forming a p-side pad electrode so as to fill a portion of the first p-side hole and the second p-side hole; the second n-side hole and the first n-side hole are formed simultaneously by etching the organic coating portion and the inorganic coating portion, the second p-side hole and the first p-side hole are formed simultaneously by etching the organic coating portion and the inorganic coating portion. The method for manufacturing a light-emitting device according to claim 6 .

8. When forming the organic coating portion, a coupling agent that is a material for the organic coating portion is applied to the surface of the inorganic coating portion, and a polymerization reaction is caused to occur, thereby forming the organic coating portion. The method for manufacturing a light-emitting element according to claim 6 or 7.

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