Semiconductor device
The semiconductor device addresses low electrical resistance and assembly challenges by employing a conductor configuration with optimized connector portions in a source-down structure, ensuring low resistance and easy assembly without short-circuits.
Patent Information
- Application Number
- JP2024079684
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-05-15
- Publication Date
- 2025-11-28
AI Technical Summary
Existing semiconductor devices face challenges in achieving low electrical resistance while maintaining ease of assembly and avoiding unintended short-circuits, particularly in source-down structures where the source electrode is located on the lower surface of the semiconductor chip.
The semiconductor device incorporates a specific conductor configuration with varying lengths and orientations of connector portions to minimize electrical resistance and facilitate assembly, including a source-down structure where the source electrode is on the lower surface, ensuring the connector is positioned to avoid short-circuiting with the semiconductor chip edges.
The solution achieves low electrical resistance and simplifies assembly by allowing visual confirmation of the semiconductor chip's position during assembly, thereby preventing short-circuits and enhancing the device's operational efficiency.
Smart Images
Figure 2025173861000001_ABST
Abstract
Description
[Technical Field]
[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]
[0002] An example of a semiconductor device includes a device having a semiconductor chip, resin, and a connector. The semiconductor chip includes a semiconductor element such as a metal oxide semiconductor field effect transistor (MOSFET). The resin covers the semiconductor chip and the connector. The connector is connected to the electrodes of the semiconductor chip via a conductor, and is partially exposed from the resin. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] Patent No. 5029078 [Patent Document 2] Patent No. 6130238 [Patent Document 3] Patent No. 6091443 Summary of the Invention [Problem to be solved by the invention]
[0004] The present invention aims to provide a semiconductor device having low electrical resistance. [Means for solving the problem]
[0005] A semiconductor device according to one embodiment includes a semiconductor chip, a first conductor, and an encapsulant. The semiconductor chip has a first surface and a second surface opposite the first surface, a first electrode exposed on the first surface, a second electrode exposed on the second surface, and a third electrode exposed on the second surface and spaced apart from the second electrode, and has a first length in a first direction. The first conductor is in contact with the first electrode. The encapsulant surrounds the semiconductor chip and a portion of the first conductor. The first conductor has a first portion, a second portion, and a third portion. The first portion is in contact with the first electrode and has a second length in the first direction that is shorter than the first length. The second portion is located in the second direction from the first portion, is connected to the first portion, and has a third length in the first direction that is longer than the second length. The third portion is located in the second direction from the second portion, is connected to the second portion, and is exposed from the sealing body. [Brief explanation of the drawings]
[0006] [Figure 1] FIG. 1 shows the external appearance of the structure of the semiconductor device according to the first embodiment. [Figure 2] FIG. 2 shows the external appearance of the structure of the semiconductor device according to the first embodiment. [Figure 3] FIG. 3 shows the structure of a portion of the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 shows a cross-sectional structure of a portion of the semiconductor device according to the first embodiment. [Figure 5] FIG. 5 shows the planar structure of the semiconductor chip of the semiconductor device according to the first embodiment. [Figure 6] FIG. 6 shows a planar structure of the connector of the semiconductor device according to the first embodiment. [Figure 7] FIG. 7 shows a plan view of a part of the semiconductor device according to the first embodiment. [Figure 8] FIG. 8 shows a plan view of a part of the semiconductor device according to the first embodiment. [Figure 9] FIG. 9 shows the structure of a portion of a semiconductor device according to a modification of the first embodiment. [Figure 10] FIG. 10 shows a cross-sectional structure of a part of a semiconductor device according to a modification of the first embodiment. DETAILED DESCRIPTION OF THE INVENTION
[0007] Hereinafter, embodiments will be described with reference to the drawings. In some embodiments or different embodiments, a plurality of components having substantially the same functions and configurations may be distinguished from each other by adding an additional number or letter to the end of the reference numeral.
[0008] The drawings are schematic, and the relationship between thickness and planar dimensions, the thickness ratio of each layer, etc. may differ from the actual ones. Furthermore, the drawings may include portions in which the relationship and ratio of dimensions differ from one another.
[0009] Hereinafter, embodiments will be described using a three-dimensional Cartesian coordinate system. The direction of the x-axis is referred to as the X direction. The direction opposite to the X direction is referred to as the -X direction. The direction of the y-axis is referred to as the Y direction. The direction opposite to the Y direction is referred to as the -Y direction. The direction of the z-axis is referred to as the Z direction, with the Z direction representing the top. The direction opposite to the Z direction is referred to as the -Z direction, with the -Z direction representing the bottom.
[0010] 1. First embodiment 1 shows the external appearance of the structure of a semiconductor device according to the first embodiment. The semiconductor device 1 is configured as a semiconductor module that constitutes a part of another device.
[0011] The semiconductor device 1 includes an encapsulant 3. The encapsulant 3 includes a resin. The encapsulant 3 extends along the XY plane. Examples of the shape of the encapsulant 3 include a hexahedron, a frustum, and a rectangular parallelepiped. Some sides of these structures may be curved. Some sides of these structures may be chamfered. The following description is based on an example in which the encapsulant 3 has a rectangular parallelepiped shape.
[0012] The encapsulant 3 covers the internal structure of the semiconductor device 1. The encapsulant 3 includes surfaces BS, TS, FS, DS, LS, and RS. The surfaces BS and TS extend along the XY plane. The surface TS is located in the Z direction from the surface BS.
[0013] The surfaces LS and RS extend along the YZ plane, and the surface RS is located in the X direction from the surface LS.
[0014] The surfaces FS and DS extend along the ZX plane. The surface DS is located in the Y direction from the surface FS.
[0015] FIG. 1 shows the surfaces FS, RS, and TS.
[0016] The semiconductor device 1 includes a connector 5 (not shown). The connector 5 may also be referred to as a connection member 5. The connector 5 includes a conductor. The connector 5 includes a plurality of portions 5A. A certain surface of each portion 5A is exposed from the surface FS. In one example, the portions 5A are aligned in the X direction. In one example, the portions 5A are located on the lower side of the surface FS, i.e., on the -Z direction side. The portions 5A function as external connection terminals that electrically connect the semiconductor device 1 to a conductor outside the semiconductor device 1.
[0017] Fig. 2 shows the external appearance of the structure of the semiconductor device according to the first embodiment. Fig. 2 shows faces DS, LS, and BS. The semiconductor device further includes a connector 6 (not shown) and a connector 7 (not shown).
[0018] The connector 6 may also be referred to as a connection member 6. The connector 6 includes a conductor. The connector 6 includes a plurality of portions 6A. A surface of each portion 6A is exposed from the surface DS. In one example, the portions 6A are aligned in the X direction. In one example, the portions 6A are located on the lower side of the surface BS, i.e., on the -Z direction side. The portions 6A function as external connection terminals that electrically connect the semiconductor device 1 to conductors external to the semiconductor device 1. As described above with reference to FIG. 1 , the semiconductor device 1 may constitute a part of another device and, in turn, constitute a part of a circuit realized by the device. When the semiconductor device 1 constitutes a part of the circuit of another device, the portion 6A is connected to a node of the circuit having a higher potential than the node to which the portion 5A is connected. Therefore, the connector 6 is connected to a node of the circuit having a higher potential than the node to which the connector 5 is connected.
[0019] The connector 7 may also be referred to as a connection member 7. The connector 7 includes a conductor. The connector 7 includes a portion 7A. A surface of the portion 7A is exposed from the encapsulant 3, and in one example, is exposed from the surface RS. In one example, the portion 7A is located in a lower portion of the surface RS. The portion 7A functions as an external connection terminal that electrically connects the semiconductor device 1 to a conductor outside the semiconductor device 1.
[0020] Fig. 3 shows the structure of a portion of the semiconductor device according to the first embodiment. Fig. 3 shows the same area as that shown in Fig. 1. Fig. 3 shows the internal structure of the semiconductor device 1. Fig. 3 shows the sealing body 3 by a dotted line.
[0021] The connector 5 spans the XY plane and extends in the Y direction. The connector 5 includes a portion 5A as described above with reference to Figure 1, as well as other portions that will be described below.
[0022] The semiconductor device 1 further includes a semiconductor chip 8. The semiconductor chip 8 is a chip including a semiconductor element. Examples of the semiconductor element include an n-type MOSFET and an IGBT (Insulated Gate Bipolar Transistor). The following description is based on the example of a MOSFET. The semiconductor chip 8 extends along the XY plane. The semiconductor chip 8 is located on the top surface of the connector 5 (i.e., the surface on the side in the Z direction).
[0023] The connector 6 extends along the XY plane and in the Y direction. The connector 6 includes a portion 6A as described above with reference to Figure 2, and also includes other portions. A portion of the connector 6 is located on the top surface of the semiconductor chip 8.
[0024] 4 shows a cross-sectional structure of a portion of the semiconductor device according to the first embodiment, taken along line IV-IV in FIG.
[0025] Connector 5 further includes portions 5B and 5C. Portion 5B is connected or continuous with, i.e., integrally formed with, portion 5A. Portion 5C may be continuous with the set of portions 5A and 5B, or may be formed separately and joined to the set of portions 5A and 5B.
[0026] Portion 5B extends along the XY plane. Portion 5B has a height at its left end (i.e., the end on the -X direction side) that is higher than the other regions. Portion 5B is connected to portion 5A at its left end. The right end of portion 5B (i.e., the end on the X direction side) is located below the semiconductor chip 8. In one example, the right end of portion 5B is located on the Y direction side of the center of an imaginary line connecting the left and right ends of the semiconductor chip 8.
[0027] Portion 5C extends along the XY plane. The lower surface of portion 5C (i.e., the surface on the side facing the -Z direction) is connected or continuous with the upper surface of portion 5B (i.e., the surface on the side facing the Z direction). The left end of portion 5C is spaced apart from portion 5A. The right end of portion 5C is located further in the Y direction than the right end of portion 5B.
[0028] The semiconductor chip 8 is located on the top surface of the portion 5C.
[0029] The semiconductor chip 8 is located directly above the portion 5B. The left end of the semiconductor chip 8 is located in the -Y direction from the left end of the portion 5C. The right end of the semiconductor chip 8 is located in the Y direction from the right end of the portion 5C.
[0030] The connector 6 further includes portions 6B and 6C. The portion 6B extends along the XY plane. The portion 6B is located directly above the semiconductor chip 8. The left end of the portion 6B is located further away from the left end of the semiconductor chip 8 in the Y direction.
[0031] Portion 6C is connected or continuous at its left end with the right end of portion 6B. Portion 6C is curved. The right end of portion 6C is located lower (i.e., in the -Z direction) than the left end of portion 6B. Portion 6C is connected or continuous at its right end with portion 6A.
[0032] Fig. 5 shows the planar structure of the semiconductor chip of the semiconductor device according to the first embodiment. Fig. 5 shows the structure of the semiconductor chip 8 along the XY plane when viewed in the -Z direction.
[0033] In one example, the semiconductor chip 8 has a quadrilateral or rectangular shape. Each of the four sides extends in the X direction or the Y direction. The semiconductor chip 8 has a length L1 in the X direction, i.e., along the x-axis. The semiconductor chip 8 includes a drain electrode 81, a gate electrode 82, and a source electrode 83.
[0034] The drain electrode 81 is exposed on the top surface of the semiconductor chip 8 (i.e., the surface on the side in the Z direction). The drain electrode 81 has a shape that follows the side of the semiconductor chip 8. In one example, the drain electrode 81 has a shape similar to the shape of the semiconductor chip 8. In one example, each side of the drain electrode 81 faces a side of the semiconductor chip 8. In one example, at least one side of the drain electrode 81 is at a distance D1 from one side of the semiconductor chip 8. In one example, each side of the drain electrode 81 is at a distance D1 from one side of the semiconductor chip 8. The drain electrode 81 is connected to one end of the transistor and is connected to the drain of the MOSFET. When the semiconductor chip 8 includes an IGBT, the drain electrode 81 is a collector electrode and is connected to the collector of the IGBT.
[0035] The gate electrode 82 is exposed on the bottom surface (i.e., the surface on the side in the -Z direction) of the semiconductor chip 8. In one example, the gate electrode 82 faces one side of the semiconductor chip 8. In one example, the gate electrode 82 faces the top end (i.e., the end on the side in the Y direction) of the semiconductor chip 8 and also faces the left end (i.e., the end on the side in the -X direction) of the semiconductor chip 8. The gate electrode 82 is a gate electrode and is connected to the gate of a MOSFET or an IGBT.
[0036] The source electrode 83 is exposed on the underside of the semiconductor chip 8. The source electrode 83 extends over an area of the underside of the semiconductor chip 8 other than the area where the gate electrode 82 is exposed. The source electrode 83 is spaced apart from the gate electrode 82. The source electrode 83 may have any shape as long as it extends over an area near the gate electrode 82 other than the area of the gate electrode 82. In one example, the source electrode 83 has a quadrilateral shape generally following the shape of the semiconductor chip 8 and has a quadrilateral notch around the gate electrode 82. The notch may have a shape in which multiple quadrilaterals are connected. The source electrode 83 is connected to the other end of the transistor and is connected to the source of the MOSFET. If the semiconductor chip 8 includes an IGBT, the source electrode 83 is an emitter electrode and is connected to the emitter of the IGBT.
[0037] In one example, at least one side of the source electrode 83 has a distance D2 from one side of the semiconductor chip 8. In one example, all sides of the source electrode 83 except for the side facing the gate electrode 82 have a distance D2 from one side of the semiconductor chip 8. The semiconductor chip 8 needs to be provided with a termination structure around the source electrode or emitter electrode. The termination structure is a structure provided at the termination and has a structure different from the structures in other regions. Unlike the drain electrode and collector electrode, the source electrode and emitter electrode cannot be formed near the edge of the semiconductor chip 8. Based on this, the distance D2 is greater than the distance D1.
[0038] As described above, the source electrode 83 is located on the bottom surface of the semiconductor chip 8 (i.e., the surface on the -Z direction side), and the drain electrode 81 (and the gate electrode 82) is located on the top surface of the semiconductor chip 8. Therefore, the semiconductor device 1 has a connector 5 connected to the source electrode 83 on the -Z direction side. Such a structure in which the source electrode, and in turn the connector connected to the source electrode, is located on the bottom surface side of the semiconductor chip is called a source-down structure.
[0039] Fig. 6 shows the planar structure of the connector 5 of the semiconductor device according to the first embodiment. Fig. 6 shows the structure of a part of the semiconductor device 1 as seen in the -Z direction along the XY plane.
[0040] Portion 5B has a shape with a notch near a region located in the -Z direction of gate electrode 82 (not shown). In one example, portion 5B has a generally quadrilateral shape and has a shape with a notch near a region located in the -Z direction of gate electrode 82 (not shown).
[0041] Portion 5C has a shape with a notch near a region located in the -Z direction of gate electrode 82 (not shown). In one example, portion 5C has a generally quadrilateral shape with a notch near a region located in the -Z direction of gate electrode 82 (not shown). The Y-direction side (i.e., upper side) end, i.e., the upper end, of portion 5C is located further in the Y direction than the upper end of portion 5B.
[0042] Fig. 7 shows a planar structure of a portion of the semiconductor device according to the first embodiment. Fig. 7 shows a portion of the internal structure of the semiconductor device 1 on the -Z direction side. Fig. 7 shows the structure along the XY plane when the same region as shown in Fig. 6 is viewed in the -Z direction.
[0043] The bottom end of the semiconductor chip 8 is located further in the Y direction than the bottom end of the portion 5B. The length L1 of the semiconductor chip 8 is smaller than the length of the portion 5B in the X direction (i.e., the length along the X axis). In one example, the left end of the semiconductor chip 8 is located further in the X direction than the left end of the portion 5B. In one example, the right end of the semiconductor chip 8 is located further in the -X direction than the right end of the portion 5B.
[0044] Portion 5C overlaps with source electrode 83. In one example, the contour of portion 5C follows the contour of source electrode 83. In one example, portion 5C has approximately the same shape as source electrode 83 and substantially matches the shape.
[0045] The connector 7 overlaps the gate electrode 82. The connector 7 contacts the gate electrode 82 at the portion where the connector 7 overlaps the gate electrode 82.
[0046] Fig. 8 shows a planar structure of a portion of the semiconductor device according to the first embodiment. Fig. 8 shows a portion of the internal structure of the semiconductor device 1 on the Z-direction side. Fig. 8 shows the structure along the XY plane when the same region as shown in Figs. 6 and 7 is viewed in the -Z direction.
[0047] The portion 6B is composed of a portion 6Ba and a portion 6Bb. The portion 6Ba occupies the -Y direction side (i.e., the lower side) of the portion 6B. In one example, the portion 6Ba has a quadrilateral shape. The lower end of the portion 6Ba is located in the Y direction from the lower end of the semiconductor chip 8. In one example, the left end of the portion 6Ba is located in the X direction from the left end of the semiconductor chip 8, and the right end of the portion 6Ba is located in the -X direction from the right end of the semiconductor chip 8. Only one of the left and right ends of the portion 6Ba may be located inside the edge of the semiconductor chip 8. In other words, the left end of the portion 6Ba may be located in the X direction from the left end of the semiconductor chip 8, or the right end of the portion 6Ba may be located in the -X direction from the right end of the semiconductor chip 8. The portion 6Ba has a length L2 in the X direction (i.e., along the x-axis). The length L2 is shorter than the length L1 of the semiconductor chip 8.
[0048] Portion 6Bb occupies the Y-direction side (i.e., the upper side) of portion 6B. In one example, portion 6Ba has a quadrilateral shape. Portion 6Bb has a lower end connected or continuous with the upper end of portion 6Ba. Portion 6Bb has a length L3 in the X direction. Length L3 is longer than lengths L1 and L2. In one example, the left end of portion 6Bb is located further in the -X direction than the left end of the semiconductor chip 8. In one example, the right end of portion 6Bb is located further in the X direction than the right end of the semiconductor chip 8.
[0049] It is preferable that portion 6Bb overlaps with the semiconductor chip 8, and therefore with the drain electrode 81, over a larger area. From this perspective, in one example, the boundary between portion 6Bb and portion 6Ba is located in the -Y direction from the midpoint of an imaginary line connecting the upper and lower ends of the semiconductor chip 8. The portion 6Ba may not be provided, that is, the portion 6B may have a length L2 from the upper end to the lower end.
[0050] Portion 6C has a length L3 along the x-axis.
[0051] 2, when the semiconductor device 1 forms part of the circuit of another device, the connector 6 is connected to a node at a potential higher than the potential of the node of the circuit to which the connector 5 is connected. Thus, during operation of the device, current flows from the portion 6A, passes through the portions 6C and 6Bb, and reaches the drain electrode 81. That is, the portions 6C and 6Bb form a current path between the portion 6A and the drain electrode 81.
[0052] According to the first embodiment, as described below, the semiconductor device 1 has a low electrical resistance. As a comparative structure, consider a connector 6 in which the portions 6C and 6Bb have the same length L2 as the portion 6Ba. However, in this case, the areas of the portions 6C and 6Bb are small, and therefore the current path between the portion 6A and the drain electrode 81 is small. On the other hand, according to the first embodiment, the portions 6C and 6Bb have a length L3 that is longer than the length L2, and therefore have a smaller resistance between the portion 6A and the drain electrode 81 than in the case of the comparative structure.
[0053] Furthermore, the portion 6Ba has a length L2, which is shorter than the length L1 of the semiconductor chip 8. Therefore, when the semiconductor chip 8 and the connector 6 are stacked along the XY plane, at least one of the left and right ends of the semiconductor chip 8 is exposed from the connector 6, regardless of the relative positional relationship between the semiconductor chip 8 and the connector 6. Therefore, when the connector 6 is placed on the semiconductor chip 8 during assembly of the semiconductor device 1, the position and orientation of the semiconductor chip 8 can be visually confirmed through the position of the edge of the semiconductor chip 8. This facilitates assembly of the semiconductor device 1. That is, according to the first embodiment, a semiconductor device 1 is provided that has low resistance and can be easily assembled.
[0054] One possible structure is to arrange the semiconductor chip 8 so that the source electrode 83 and the gate electrode 82 are located on the upper surface (i.e., the surface on the side facing the Z direction) (a so-called drain-down structure), and to connect the connector 6 to the source electrode 83. However, with such a structure, the portion 6Bb of the connector 6 may come into contact with a region including the edge of the chip 8. As a result of this contact, the source and drain of the MOSFET of the semiconductor chip 8 may be short-circuited. For this reason, the connector 6 cannot be applied to a drain-down structure. On the other hand, according to the first embodiment, the source electrode 83 is located on the lower surface (i.e., a source-down structure), so that it is possible to realize a semiconductor device 1 that has low resistance and can be easily assembled while avoiding unintended short-circuiting.
[0055] Fig. 9 shows the structure of a portion of a semiconductor device according to a modification of the first embodiment. Fig. 9 shows the same region as shown in Figs. 1 and 3. Like Fig. 3, Fig. 9 shows the internal structure of the semiconductor device 1, with the sealing body 3 indicated by a dotted line. Fig. 10 shows the cross-sectional structure of a portion of the semiconductor device according to a modification of the first embodiment, and Fig. 10 shows the structure taken along line XX in Fig. 9.
[0056] 9 and 10, portion 6C of connector 6 does not have to be curved. That is, portion 6C has a shape in which two arc-shaped sub-portions are connected, in other words, a shape of an elongated S. In other words, portion 6C extends in the Y direction and curves toward semiconductor chip 8 or connector 5 without curving in the Z direction away from semiconductor chip 8, and connects with portion 6A extending in the Y direction.
[0057] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]
[0058] 1...Semiconductor device, 3... Sealing body, 5...Connector, 6...connector, 7...connector, 8...Semiconductor chip
Claims
1. a semiconductor chip having a first surface and a second surface opposite to the first surface, a first electrode exposed on the first surface, a second electrode exposed on the second surface, and a third electrode exposed on the second surface and spaced apart from the second electrode, the semiconductor chip having a first length in a first direction; a first conductor in contact with the first electrode; an encapsulant that surrounds the semiconductor chip and a portion of the first conductor; A semiconductor device comprising: the first conductor has a first portion, a second portion, and a third portion; the first portion is in contact with the first electrode and has a second length in the first direction that is shorter than the first length; the second portion is located in a second direction from the first portion, is connected to the first portion, and has a third length in the first direction that is longer than the second length; the third portion is located in the second direction relative to the second portion, is connected to the second portion, and is exposed from the sealing body; The semiconductor device has:
2. The third length is greater than the first length. The semiconductor device according to claim 1 .
3. a second conductor in contact with the second electrode, having a portion surrounded by the encapsulant and having a portion exposed from the encapsulant; a third conductor in contact with the third electrode, having a portion surrounded by the sealing body and having a portion exposed from the sealing body; Further provided with The semiconductor device according to claim 1 .
4. the first electrode has a contour that follows the contour of the semiconductor chip; an edge of the semiconductor chip has a first distance from an edge of the first electrode and a second distance from an edge of the third electrode; the second distance is less than the first distance; The semiconductor device according to claim 1 .
5. All of the sides of the third electrode except for the side facing the second electrode are spaced the second distance from one side of the semiconductor chip. The semiconductor device according to claim 4 .
6. the semiconductor chip has a first end and a second end; the second end is located in the first direction from the first end, the second portion has a third end and a fourth end; the first end is located in the first direction relative to the third end, the fourth end is located further in the first direction than the second end; The semiconductor device according to claim 1 .
7. a second conductor in contact with the second electrode, having a portion surrounded by the encapsulant and having a portion exposed from the encapsulant; a third conductor in contact with the third electrode, having a portion surrounded by the sealing body and having a portion exposed from the sealing body; Furthermore, the third length is greater than the first length; the first electrode has a contour that follows the contour of the semiconductor chip; an edge of the semiconductor chip has a first distance from an edge of the first electrode and a second distance from an edge of the third electrode; the second distance is less than the first distance; the semiconductor chip has a first end and a second end; the second end is located in the first direction from the first end, the second portion has a third end and a fourth end; the first end is located in the first direction relative to the third end, the fourth end is located further in the first direction than the second end; The semiconductor device according to claim 1 .
8. the semiconductor chip includes a transistor; one end of the transistor is connected to the first electrode, the gate of the transistor is connected to the second electrode; The other end of the transistor is connected to the third electrode.
8. The semiconductor device according to claim 1.
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