Semiconductor device, and method for manufacturing semiconductor device

Abstract

To provide a semiconductor device which can inhibit separation of a wire in a terminal.SOLUTION: A semiconductor device A10 includes: a semiconductor element 10 having a first electrode 11 positioned on one side in a first direction; a first terminal 21 conductively joined to the first electrode 11; and a first wire 30 conductively joined to the first electrode 11 and the first terminal 21. The first wire 30 includes: a main part 31; a first joint part 32 joined to one end of the main part 31; and a second joint part 33 joined to the other end of the main part 31. The first joint part 32 is conductively jointed to the first electrode 11. The second joint part 33 is conductively jointed to the first terminal 21. Viewing in the first direction, a direction in which the second joint part 33 extends is different from a direction in which the main part 31 extends.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the same. [Background technology]

[0002] Patent Document 1 discloses an example of a semiconductor device including a first semiconductor element and a first lead and a third lead each electrically connected to the first semiconductor element. The first semiconductor element is a switching element such as a MOSFET. In this semiconductor device, when the first semiconductor element is turned on, a current flows from the first lead to the third lead. This semiconductor device is used, for example, as an element constituting a circuit of a DC-DC converter.

[0003] The semiconductor device disclosed in Patent Document 1 further includes a second wire conductively bonded to the first semiconductor element and the third lead. The cross-sectional area of ​​the second wire may be increased to allow a larger current to flow through the third lead. In this case, heat conducted from the first semiconductor element to the second wire generates thermal stress in the second wire. When the thermal stress generated in the second wire increases, the shear stress acting on the interface between the third lead and the second wire also increases, which may cause the second wire to peel off from the third lead. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2018-14490 A

[0005] [overview] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can suppress peeling of wires from terminals.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a semiconductor element having a first electrode located on one side in a first direction; a first terminal electrically connected to the first electrode; and a first wire conductively bonded to the first electrode and the first terminal. The first wire has a main portion, a first joint portion connected to one end of the main portion, and a second joint portion connected to the other end of the main portion. The first joint portion is conductively bonded to the first electrode. The second joint portion is conductively bonded to the first terminal. When viewed in the first direction, the direction in which the second joint portion extends is different from the direction in which the main portion extends.

[0007] A second aspect of the present disclosure provides a method for manufacturing a semiconductor device, comprising the steps of: forming a first wire conductively bonded to a semiconductor element and a first terminal; the semiconductor element having a first electrode located on one side in a first direction; the first wire having a main portion; a first joint portion connected to one end of the main portion and conductively bonded to the first electrode; and a second joint portion connected to the other end of the main portion and conductively bonded to the first terminal. In the step of forming the first wire, a joining tool is used to process a metal material, thereby forming the first joint portion, the main portion, and the second joint portion in this order. In forming the second joint portion, the joining tool is rotated around the first direction, and then the second joint portion is separated from the metal material.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view corresponding to FIG. 1, seen through the sealing resin. [Figure 3] FIG. 3 is a bottom view of the semiconductor device shown in FIG. [Figure 4] FIG. 4 is a front view of the semiconductor device shown in FIG. [Figure 5]FIG. 5 is a right side view of the semiconductor device shown in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a partially enlarged view of FIG. [Figure 10] FIG. 10 is a partially enlarged view of FIG. [Figure 11] FIG. 11 is a partially enlarged cross-sectional view illustrating a method for manufacturing the semiconductor device shown in FIG. [Figure 12] 12A to 12C are partially enlarged cross-sectional views illustrating a method for manufacturing the semiconductor device shown in FIG. [Figure 13] 13A to 13C are partially enlarged cross-sectional views illustrating a method for manufacturing the semiconductor device shown in FIG. [Figure 14] 14A to 14C are partially enlarged cross-sectional views illustrating a method for manufacturing the semiconductor device shown in FIG. [Figure 15] FIG. 15 is a partially enlarged plan view of a semiconductor device according to a first modified example of the first embodiment of the present disclosure, and corresponds to FIG. [Figure 16] FIG. 16 is a partially enlarged plan view of a semiconductor device according to a second modification of the first embodiment of the present disclosure, and corresponds to FIG. [Figure 17] FIG. 17 is a partially enlarged plan view of a semiconductor device according to a third modified example of the first embodiment of the present disclosure, and corresponds to FIG. [Figure 18] FIG. 18 is a cross-sectional view of a semiconductor device according to the second embodiment of the present disclosure, and corresponds to FIG. [Figure 19] FIG. 19 is a cross-sectional view of the semiconductor device shown in FIG. 18, and corresponds to FIG. [Figure 20] FIG. 20 is a plan view of the semiconductor device according to the third embodiment of the present disclosure, seen through the sealing resin.

[0010] [Detailed explanation] The details of the present disclosure will be described with reference to the accompanying drawings.

[0011] [First embodiment] A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 10. The semiconductor device A10 is a surface-mount package. The semiconductor device A10 includes a semiconductor element 10, a first terminal 21, a second terminal 22, a third terminal 23, a bonding layer 29, a first wire 30, a second wire 40, and a sealing resin 50. For ease of understanding, FIG. 2 shows a perspective view of the sealing resin 50. In FIG. 2, the outline of the sealing resin 50 is shown by an imaginary line (double-dashed line).

[0012] In the description of the semiconductor device A10, for convenience, the normal direction to a first surface 211A of a first terminal 21 (described later) is referred to as the "first direction z." A direction perpendicular to the first direction z is referred to as the "second direction x." A direction perpendicular to each of the first direction z and the second direction x is referred to as the "third direction y."

[0013] The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, the semiconductor element 10 may be a field effect transistor such as a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor). In the description of the semiconductor device A10, the semiconductor element 10 is an n-channel MOSFET with a vertical structure. The semiconductor element 10 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC).

[0014] As shown in FIGS. 2 and 10 , the semiconductor element 10 has a first electrode 11, a second electrode 12, and a third electrode 13. The first electrode 11 is located on one side in the first direction z. The second electrode 12 is located on the opposite side of the first electrode 11 in the first direction z. The third electrode 13 is located on the same side as the first electrode 11 in the first direction z. A voltage is applied to each of the first electrode 11 and the second electrode 12. A gate voltage for driving the semiconductor element 10 is applied to the third electrode 13. When the semiconductor element 10 is turned on by applying the gate voltage to the third electrode 13, a current flows from the second electrode 12 to the first electrode 11. The first electrode 11 has a second surface 11A facing one side in the first direction z.

[0015] The first terminal 21, the second terminal 22, and the third terminal 23 are used when mounting the semiconductor device A10 on a wiring substrate. The first terminal 21, the second terminal 22, and the third terminal 23 are obtained from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of each of the first terminal 21, the second terminal 22, and the third terminal 23 includes copper.

[0016] As shown in FIGS. 2 and 6 , the second terminal 22 has a second inner part 221, a second outer part 222, and a pad part 223. The pad part 223 mounts the semiconductor element 10. The pad part 223 has a mounting surface 223A and a back surface 223B. The mounting surface 223A faces the same side as the second surface 11A of the first electrode 11 of the semiconductor element 10 in the first direction z. At least a portion of the mounting surface 223A is covered with a sealing resin 50. The back surface 223B faces the opposite side to the mounting surface 223A in the first direction z. The back surface 223B is plated with, for example, tin (Sn). The back surface 223B is exposed from the sealing resin 50.

[0017] As shown in FIG. 6 , the second outer part 222 protrudes from the sealing resin 50 on the side opposite to the side on which the pad part 223 is located in the third direction y. The surface of the second outer part 222 is plated with, for example, tin. The second inner part 221 connects the pad part 223 and the second outer part 222. When viewed in the second direction x, the second inner part 221 is bent. The second inner part 221 is covered with the sealing resin 50.

[0018] 10, the bonding layer 29 electrically connects the mounting surface 223A of the pad portion 223 to the second electrode 12 of the semiconductor element 10. This allows the second terminal 22 to be electrically connected to the second electrode 12. The bonding layer 29 is, for example, solder. Alternatively, the bonding layer 29 may be a sintered body of metal particles. The metal particles may contain, for example, silver (Ag).

[0019] As shown in FIG. 2, the first terminal 21 is spaced from the second inner part 221 and the second outer part 222 of the second terminal 22 on one side in the second direction x. The first terminal 21 is located on the same side as the second inner part 221 and the second outer part 222 with respect to the pad part 223 of the second terminal 22 in the third direction y. The first terminal 21 is electrically connected to the first electrode 11 of the semiconductor element 10. As shown in FIGS. 2 and 7, the first terminal 21 has a first inner part 211 and a first outer part 212. The first inner part 211 is covered with a sealing resin 50. The first inner part 211 has a first surface 211A that faces the same side as the second surface 11A of the semiconductor element 10 (first electrode 11) in the first direction z. The first outer part 212 is connected to the first inner part 211. The first outer part 212 protrudes from the sealing resin 50 on the side opposite to the side on which the first inner part 211 is located in the third direction y. As shown in Fig. 5, the first outer part 212 is bent in a gull-wing shape when viewed in the second direction x. The surface of the first outer part 212 is plated with, for example, tin.

[0020] As shown in FIG. 2 , the third terminal 23 is located on the opposite side of the first terminal 21 in the second direction x with respect to the second inner portion 221 and the second outer portion 222 of the second terminal 22. The third terminal 23 is electrically connected to the third electrode 13 of the semiconductor element 10. As shown in FIG. 2 , the third terminal 23 has a third inner portion 231 and a third outer portion 232. The third inner portion 231 is covered with a sealing resin 50. The third outer portion 232 is connected to the third inner portion 231. The third outer portion 232 protrudes from the sealing resin 50 on the side opposite to the side where the third inner portion 231 is located in the third direction y. When viewed in the second direction x, the third outer portion 232 is bent in a gull-wing shape. The surface of the third outer portion 232 is plated with, for example, tin.

[0021] 2 and 7, the first wire 30 is conductively joined to the first electrode 11 of the semiconductor element 10 and the first inner portion 211 of the first terminal 21. This allows the first terminal 21 to be electrically connected to the first electrode 11. The first wire 30 contains aluminum (Al). Alternatively, the first wire 30 may contain copper.

[0022] 2 and 7, the first wire 30 has a main portion 31, a first joint portion 32, and a second joint portion 33. The first joint portion 32 is connected to one end of the main portion 31. The first joint portion 32 is conductively joined to the second surface 11A of the semiconductor element 10 (first electrode 11). The second joint portion 33 is connected to the other end of the main portion 31. The second joint portion 33 is conductively joined to the first surface 211A of the first terminal 21 (first inner portion 211).

[0023] 9, the extending direction of each of the first and second bonding portions 32 and 33 is different from the extending direction of the main portion 31. When viewed in the first direction z, the extending direction of the second bonding portion 33 is different from the extending direction of the first bonding portion 32. In the semiconductor device A10, the first bonding portion 32 extends along the third direction y. The second bonding portion 33 extends from the main portion 31 in a direction away from the second inner portion 221 of the second terminal 22 in the second direction x. Furthermore, in the semiconductor device A10, when viewed in the first direction z, the angle α2 formed between the main portion 31 and the second bonding portion 33 is greater than the angle α1 formed between the main portion 31 and the first bonding portion 32.

[0024] As shown in FIG. 10 , the main portion 31 includes a first cross section S1 and a second cross section S2, which are cross sections in the direction in which the main portion 31 extends. The first cross section S1 is located farthest from the first surface 211A of the first terminal 21 in the first direction z. The second cross section S2 forms the boundary between the main portion 31 and the second joint portion 33. The ratio of the second distance d2 to the first distance d1 is 25% or more. Here, the first distance d1 is the minimum distance between the first cross section S1 and the second cross section S2 as viewed in the first direction z. The second distance d2 is the distance between the first surface 211A and the first cross section S1 in the first direction z. Furthermore, the sum of the second distance d2 and the dimension of the first cross section S1 in the first direction z is 150% or more of the dimension of the first cross section S1 in the first direction z.

[0025] As shown in FIG. 10, the dimension of the first cross section S1 of the main portion 31 in the first direction z is greater than the dimension of the semiconductor element 10 in the first direction z.

[0026] As shown in FIG. 10 , the first surface 211A of the first terminal 21 is located between the second surface 11A of the semiconductor element 10 and the first cross section S1 of the main portion 31 in the first direction z. In the semiconductor device A10, the sum of the second distance d2 and the dimension of the first cross section S1 in the first direction z is smaller than the third distance d3. Here, the third distance d3 is the distance between the first surface 211A and the second surface 11A in the first direction z. In this case, the sum of the second distance d2 and the dimension of the first cross section S1 in the first direction z is 70% or more of the third distance d3. Alternatively, the sum of the second distance d2 and the dimension of the first cross section S1 in the first direction z may be larger than the third distance d3. Therefore, in this case, the sum of the second distance d2 and the dimension of the first cross section S1 in the first direction z exceeds 100% of the third distance d3.

[0027] 9 and 10 , the second joint portion 33 includes a first portion 331 and a second portion 332 connected to the first portion 331. The first portion 331 is connected to the second cross section S2 of the main portion 31. The second portion 332 is located on the opposite side of the main portion 31 from the first portion 331. The dimension of the second portion 332 in the first direction z is smaller than the dimension of the second cross section S2 in the first direction z. The dimension of the second portion 332 in the first direction z gradually decreases with increasing distance from the first portion 331. When viewed in the first direction z, the dimension of the second portion 332 in its extension direction is smaller than the dimension of the first portion 331 in its extension direction.

[0028] 2, the second wire 40 is conductively joined to the third electrode 13 of the semiconductor element 10 and the third inner portion 231 of the third terminal 23. This allows the third terminal 23 to be electrically connected to the third electrode 13. The second wire 40 contains, for example, either aluminum or gold (Au). The diameter of the second wire 40 is smaller than the dimension of the first cross section S1 of the first wire 30 (main portion 31) in the first direction z.

[0029] As shown in FIGS. 6 to 8, the sealing resin 50 covers the semiconductor element 10, the first wire 30, and the second wire 40. The sealing resin 50 has electrical insulating properties. The sealing resin 50 is made of a material containing, for example, black epoxy resin. The sealing resin 50 has a third surface 51, a fourth surface 52, a first side surface 53, a second side surface 54, and two third side surfaces 45.

[0030] 6 to 8, the third surface 51 faces the same side as the first surface 211A of the first terminal 21 (first inner portion 211) in the first direction z. The fourth surface 52 faces the opposite side to the third surface 51 in the first direction z. The back surface 223B of the pad portion 223 of the second terminal 22 is exposed from the fourth surface 52.

[0031] 1, 3, 6, and 7, the first side surface 53 and the second side surface 54 face opposite each other in the third direction y. The first side surface 53 and the second side surface 54 are connected to the third surface 51 and the fourth surface 52, respectively. The first outer portion 212 of the first terminal 21, the second outer portion 222 of the second terminal 22, and the third outer portion 232 of the third terminal 23 protrude from the first side surface 53 in the third direction y. A portion of the pad portion 223 of the second terminal 22 protrudes from the second side surface 54 in the third direction y.

[0032] Next, a method of forming the first wire 30 in the manufacturing method of the semiconductor device A10 will be described with reference to FIGS. 11 to 14. A connector 80 is used to form the first wire 30. The connector 80 includes a wedge portion 81, a guide portion 82, and a cutting portion 83. In the step of forming the first wire 30, the connector 80 is used to process a metal material 89, thereby forming the first joint portion 32, the main portion 31, and the second joint portion 33 in this order. The metal material 89 includes aluminum. Here, the cross-sectional positions in each of FIGS. 11 to 14 correspond to the cross-sectional positions in FIG. 7.

[0033] 11, a first bonding portion 32 is formed to be conductively bonded to the second surface 11A of the semiconductor element 10 (first electrode 11). The first bonding portion 32 is formed by pressing a wedge portion 81 against a metal material 89 fed from a guide portion 82.

[0034] 12, the main portion 31 is formed by moving the connector 80 away from the semiconductor element 10 in the first direction z.

[0035] Next, as shown in FIGS. 13 and 14, a second joint portion 33 is formed, which is conductively joined to the first surface 211A of the first terminal 21 (first inner portion 211). First, as shown in FIG. 13, the connector 80 is rotated around the axis N, and then the wedge portion 81 is pressed against the metal material 89 fed out from the guide portion 82. The axis N extends along the first direction z. Next, as shown in FIG. 14, the cutting portion 83 cuts off the second joint portion 33 from the metal material 89. This completes the formation of the first wire 30.

[0036] Next, a semiconductor device A11 according to a first modified example of the first embodiment of the present disclosure will be described with reference to Fig. 15. Fig. 15 corresponds to Fig. 9 showing the semiconductor device A10. In the semiconductor device A11, the configuration of the first wire 30 is different from that of the semiconductor device A10.

[0037] 15, in the semiconductor device A11, the first joint portion 32 extends along the third direction y. The second joint portion 33 extends from the main portion 31 in the second direction x toward the second inner portion 221 of the second terminal 22. Furthermore, in the semiconductor device A11, the angle α2 formed between the main portion 31 and the second joint portion 33 is smaller than the angle α1 formed between the main portion 31 and the first joint portion 32 when viewed in the first direction z.

[0038] Next, a semiconductor device A12 according to a second modified example of the first embodiment of the present disclosure will be described with reference to Fig. 16. Fig. 16 corresponds to Fig. 9 showing the semiconductor device A10. In the semiconductor device A12, the configuration of the first wire 30 is different from that of the semiconductor device A10.

[0039] 16, in the semiconductor device A12, the first bonding portion 32 and the second bonding portion 33 each extend along the third direction y. Therefore, in the semiconductor device A12, the extension direction of the second bonding portion 33 is the same as the extension direction of the first bonding portion 32. Furthermore, in the semiconductor device A12, when viewed in the first direction z, the angle α2 formed between the main portion 31 and the second bonding portion 33 is equal to the angle α1 formed between the main portion 31 and the first bonding portion 32.

[0040] Next, a semiconductor device A13 according to a third modified example of the first embodiment of the present disclosure will be described with reference to Fig. 17. Fig. 17 corresponds to Fig. 9 showing the semiconductor device A10. In the semiconductor device A13, the configuration of the first wire 30 is different from that of the semiconductor device A10.

[0041] 17, in the semiconductor device A13, the main portion 31 and the first joint portion 32 each extend along the third direction y. Therefore, in the semiconductor device A13, the extension direction of the first joint portion 32 is the same as the extension direction of the main portion 31. Furthermore, in the semiconductor device A13, when viewed in the first direction z, the angle α2 formed between the main portion 31 and the second joint portion 33 is smaller than the angle α1 (=180°) formed between the main portion 31 and the first joint portion 32.

[0042] As described above, in the configuration of the first wire 30 of the semiconductor devices A10 to A13, it is essential that the direction in which the second joint portion 33 extends, as viewed in the first direction z, be different from the direction in which the main portion 31 extends. Therefore, in the configuration of the first wire 30 of the semiconductor devices A10 to A13, the extension directions of the first joint portion 32 and the second joint portion 33 relative to the main portion 31, as viewed in the first direction z, and the magnitude relationship between the angle α1 and the angle α2 can be freely set.

[0043] Next, the effects of the semiconductor device A10 will be described.

[0044] The semiconductor device A10 includes a semiconductor element 10, a first terminal 21, and a first wire 30. The first wire 30 has a main portion 31, a first joint portion 32, and a second joint portion 33. The first joint portion 32 is conductively bonded to the first electrode 11 of the semiconductor element 10. The second joint portion 33 is conductively bonded to the first terminal 21. The extension direction of the second joint portion 33 differs from the extension direction of the main portion 31 as viewed in the first direction z. With this configuration, the thermal stress transmitted from the main portion 31 to the second joint portion 33 in the first wire 30 is decomposed into a component flowing in the extension direction of the main portion 31 as viewed in the first direction z and a component flowing in a direction perpendicular to the extension direction of the main portion 31 as viewed in the first direction z. This reduces the shear stress flowing in the extension direction of the main portion 31 as viewed in the first direction z at the interface between the first terminal 21 and the second joint portion 33. Therefore, with this configuration, peeling of the first wire 30 from the first terminal 21 can be suppressed in the semiconductor device A10.

[0045] As viewed in the first direction z, the direction in which the first joint 32 extends is different from the direction in which the main portion 31 extends. By adopting this configuration, it is possible to reduce the component of the thermal stress in the first wire 30 that flows in the direction in which the main portion 31 extends as viewed in the first direction z, out of the thermal stress transmitted from the first joint 32 to the main portion 31.

[0046] The main portion 31 includes a first cross section S1 and a second cross section S2 that are cross sections in the direction in which the main portion 31 extends. The first terminal 21 has a first surface 211A to which the second joint portion 33 is conductively joined. The ratio of the second distance d2 between the first surface 211A and the first cross section S1 in the first direction z to the first distance d1 between the first cross section S1 and the second cross section S2 in the first direction z is 50% or more. This configuration allows the inclination angle of the main portion 31 with respect to the second joint portion 33 to be set larger. This reduces the thermal stress transmitted from the main portion 31 to the second joint portion 33 in the first wire 30.

[0047] The first electrode 11 of the semiconductor element 10 has a second surface 11A to which the first bonding portion 32 is conductively bonded. The first surface 211A of the first terminal 21 is located between the second surface 11A and the first cross section S1 of the main portion 31 in the first direction z. Therefore, in this configuration, by setting the inclination angle of the main portion 31 with respect to the second bonding portion 33 to be larger, peeling of the first wire 30 from the first terminal 21 can be effectively suppressed.

[0048] The dimension of the first cross section S1 of the main portion 31 is larger than the dimension in the first direction z of the semiconductor element 10. With this configuration, the first wire 30 can carry a larger current.

[0049] The first wire 30 contains copper. The ionization tendency of copper is lower than that of aluminum. Furthermore, the linear expansion coefficient of copper is lower than that of aluminum. This configuration effectively suppresses peeling of the first wire 30 from the first terminal 21, and also effectively prevents breakage of the first wire 30 even if pitting corrosion due to thermal stress occurs in the first wire 30.

[0050] The semiconductor device A10 further includes a second terminal 22 having a pad portion 223. The pad portion 223 has a back surface 223B. The back surface 223B is exposed from the sealing resin 50. By adopting this configuration, heat generated from the semiconductor element 10 can be more efficiently dissipated to the outside.

[0051] Second Embodiment A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 18 and 19. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figures 18 and 19 correspond to Figures 7 and 8, respectively, which show the semiconductor device A10.

[0052] In the semiconductor device A20, the configuration of the sealing resin 50 is different from that of the semiconductor device A10.

[0053] 18 and 19, the dimension of the sealing resin 50 in the first direction z (the distance in the first direction z from the third surface 51 to the fourth surface 52) is larger than the corresponding dimension in the semiconductor device A10. As shown in FIG. 18, the fourth distance d4 is larger than the sum of the second distance d2 and the dimension in the first direction z of the first cross section S1 of the first wire 30. Here, the fourth distance d4 is the distance between the third surface 51 of the sealing resin 50 and the first cross section S1 in the first direction z.

[0054] Next, the effects of the semiconductor device A20 will be described.

[0055] The semiconductor device A20 includes a semiconductor element 10, a first terminal 21, and a first wire 30. The first wire 30 has a main portion 31, a first joint portion 32, and a second joint portion 33. The first joint portion 32 is conductively joined to the first electrode 11 of the semiconductor element 10. The second joint portion 33 is conductively joined to the first terminal 21. When viewed in the first direction z, the direction in which the second joint portion 33 extends is different from the direction in which the main portion 31 extends. Therefore, with this configuration, it is possible to prevent the first wire 30 from peeling off from the first terminal 21 in the semiconductor device A20 as well. Furthermore, by having a configuration in common with the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0056] In the semiconductor device A20, a fourth distance d4 in the first direction z between the third surface 51 of the sealing resin 50 and the first cross section S1 of the first wire 30 is greater than the sum of the second distance d2 and the dimension of the first cross section S1 in the first direction z. This configuration further increases the minimum dimension in the first direction z of the portion of the sealing resin 50 that includes the third surface 51 and covers the first wire 30. This makes it possible to more appropriately protect the first wire 30 from external factors while improving the dielectric strength of the semiconductor device A20.

[0057] Third Embodiment A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Fig. 20. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. Here, Fig. 20 is a perspective view of the sealing resin 50. In Fig. 20, the outline of the sealing resin 50 is shown by imaginary lines.

[0058] In the semiconductor device A30, the configuration of the first terminal 21 is different from that of the semiconductor device A10.

[0059] 20 , the first surface 211A of the first inner portion 211 of the first terminal 21 includes a first region 211B and a second region 211C. As viewed in the first direction z, the second region 211C protrudes from the first region 211B toward the side where the semiconductor element 10 is located. As viewed in the first direction z, the main portion 31 of the first wire 30 overlaps each of the first region 211B and the second region 211C.

[0060] Next, the effects of the semiconductor device A30 will be described.

[0061] The semiconductor device A30 includes a semiconductor element 10, a first terminal 21, and a first wire 30. The first wire 30 has a main portion 31, a first joint portion 32, and a second joint portion 33. The first joint portion 32 is conductively joined to the first electrode 11 of the semiconductor element 10. The second joint portion 33 is conductively joined to the first terminal 21. When viewed in the first direction z, the direction in which the second joint portion 33 extends is different from the direction in which the main portion 31 extends. Therefore, with this configuration, it is possible to prevent the first wire 30 from peeling off from the first terminal 21 in the semiconductor device A30 as well. Furthermore, by having a configuration in common with the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0062] In the semiconductor device A30, the first surface 211A of the first terminal 21 includes a first region 211B and a second region 211C. As viewed in the first direction z, the main portion 31 of the first wire 30 overlaps each of the first region 211B and the second region 211C. With this configuration, even if the position of the second joint portion 33 with respect to the first surface 211A deviates from the design when forming the first wire 30 in the manufacture of the semiconductor device A10, the second joint portion 33 can be more reliably conductively joined to the first surface 211A.

[0063] The present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the present disclosure can be freely designed in various ways. In the present disclosure, the semiconductor element 10 can be various elements such as various switching elements like the semiconductor devices A10 to A30, as well as LSIs and diodes. Therefore, the type of element of the semiconductor element 10 is not limited to the above-described embodiments.

[0064] The present disclosure includes the embodiments described in the appendix below. [Appendix 1] a semiconductor element (10) having a first electrode (11) located on one side in a first direction (z); a first terminal (21) electrically connected to the first electrode (11); a first wire (30) conductively connected to the first electrode (11) and the first terminal (21); The first wire (30) has a main portion (31), a first joint portion (32) connected to one end of the main portion (31), and a second joint portion (33) connected to the other end of the main portion (31), the first joint portion (32) is conductively joined to the first electrode (11); The second joint portion (33) is conductively joined to the first terminal (21), The semiconductor device (A10) has an extending direction of the second joint portion (33) different from an extending direction of the main portion (31) when viewed in the first direction (z). [Appendix 2] The semiconductor device (A10) according to Appendix 1, wherein, as viewed in the first direction (z), the direction in which the first joint portion (32) extends is different from the direction in which the main portion (31) extends. [Appendix 3] The semiconductor device (A10) according to Appendix 2, wherein, as viewed in the first direction (z), the direction in which the second joint portion (33) extends is different from the direction in which the first joint portion (32) extends. [Appendix 4] the first terminal (21) faces one side in the first direction (z) and has a first surface (211A) to which the second joint portion (33) is conductively joined; The main portion (31) includes a first cross section (S1) and a second cross section (S2) that are cross sections in the direction in which the main portion (31) extends, the first cross section (S1) is located farthest from the first surface (211A) in the first direction (z), The second cross section (S2) forms a boundary between the main portion (31) and the second joint portion (33), A semiconductor device (A10) described in Appendix 2, wherein the ratio of a second distance (d2) between the first surface (211A) and the first cross section (S1) in the first direction (z) to a first distance (d1) between the first cross section (S1) and the second cross section (S2) when viewed in the first direction (z) is 25% or more. [Appendix 5] The semiconductor device (A10) according to Appendix 4, wherein the dimension of the first cross section (S1) in the first direction (z) is greater than the dimension of the semiconductor element (10) in the first direction (z). [Appendix 6] the first electrode (11) has a second surface (11A) that faces the same side as the first surface (211A) in the first direction (z) and to which the first joint portion (32) is conductively joined; The semiconductor device (A10) according to appendix 4, wherein the first surface (211A) is located between the second surface (11A) and the first cross section (S1) in the first direction (z). [Appendix 7] A semiconductor device (A10) described in Appendix 6, wherein the sum of the second distance (d2) and the dimension of the first cross section (S1) in the first direction is smaller than a third distance (d3) between the first surface (211A) and the second surface (11A) in the first direction (z). [Appendix 8] the second joint portion (33) includes a first portion (331) connected to the main portion (31) and a second portion (332) located on the opposite side of the main portion (31) with respect to the first portion (331), The semiconductor device (A10) according to Appendix 7, wherein the dimension of the second portion (332) in the first direction (z) is smaller than the dimension of the second cross section (S2) in the first direction (z). [Appendix 9] A semiconductor device (A10) according to Appendix 8, wherein, when viewed in the first direction (z), the dimension of the second portion (332) in the direction in which it extends is smaller than the dimension of the first portion (331) in the direction in which it extends. [Appendix 10] The semiconductor device (A10) according to Appendix 9, wherein the dimension of the second portion (332) in the first direction (z) gradually decreases with increasing distance from the first portion (331). [Appendix 11] The semiconductor device further includes a sealing resin (50) that covers the semiconductor element (10) and the first wire (30), The semiconductor device (A10) according to any one of appendices 6 to 10, wherein the first terminal (21) is exposed from the sealing resin (50). [Appendix 12] the sealing resin (50) has a third surface (51) facing the same side as the first surface (211A) in the first direction (z); A semiconductor device (A20) described in Appendix 11, wherein a fourth distance (d4) between the third surface (51) and the first cross section (S1) in the first direction (z) is greater than the sum of the second distance (d2) and the dimension of the first cross section (S1) in the first direction (z). [Appendix 13] The semiconductor device (A10) according to Appendix 11, wherein the first wire (30) includes aluminum. [Appendix 14] The semiconductor device (A10) according to Appendix 11, wherein the first wire (30) contains copper. [Appendix 15] The semiconductor device further includes a second terminal (22) that is electrically connected to the semiconductor element (10) and is exposed from the sealing resin (50), The semiconductor element (10) has a second electrode (12) located on the opposite side to the first electrode (11) in the first direction (z), The semiconductor device (A10) according to Appendix 11, wherein the second electrode (12) is conductively joined to the second terminal (22). [Appendix 16] the second terminal (22) has a back surface (223B) facing the opposite side to the second surface (11A) in the first direction (z), The semiconductor device (A10) according to Appendix 15, wherein the back surface (223B) is exposed from the sealing resin (50). [Appendix 17] a third terminal (23) that is electrically connected to the semiconductor element (10) and is exposed from the sealing resin (50); The semiconductor element (10) has a third electrode (13) located on the same side as the first electrode (11) in the first direction (z), The semiconductor device (A10) according to appendix 16, wherein the third terminal (23) is electrically connected to the third electrode (13). [Appendix 18] The device further includes a second wire (40) conductively connected to the third electrode (13) and the third terminal (23), The semiconductor device (A10) according to Appendix 17, wherein the second wire (40) is covered with the sealing resin (50). [Appendix 19] The semiconductor device (A10) according to Appendix 18, wherein the diameter of the second wire (40) is smaller than the dimension of the first cross section (S1) in the first direction (z). [Appendix 20] The method includes a step of forming a first wire (30) that is conductively bonded to the semiconductor element (10) and the first terminal (21), The semiconductor element (10) has a first electrode (11) located on one side in a first direction (z), The first wire (30) has a main portion (31), a first joint portion (32) connected to one end of the main portion (31) and conductively joined to the first electrode (11), and a second joint portion (33) connected to the other end of the main portion (31) and conductively joined to the first terminal (21), In the step of forming the first wire (30), the first joint portion (32), the main portion (31), and the second joint portion (33) are formed in this order by processing a metal material using a connector (80), A method for manufacturing a semiconductor device (A10), wherein the second joint (33) is formed by rotating the connector (80) around the first direction (z) and then separating the second joint (33) from the metal material. [Appendix 21] A semiconductor device (A10) according to Appendix 3, wherein, when viewed in the first direction (z), an angle (α2) formed between the main portion (31) and the second joint portion (33) is greater than an angle (α1) formed between the main portion (31) and the first joint portion (32). [Appendix 22] A semiconductor device (A10) according to Appendix 7, wherein the sum of the second distance (d2) and the dimension of the first cross section (S1) in the first direction (z) is 70% or more of the third distance (d3). [Appendix 23] the first surface (211A) includes a first region (211B) and a second region (211C) that protrudes from the first region (211B) toward a side where the semiconductor element (10) is located, as viewed in the first direction (z); The semiconductor device (A30) according to appendix 9, wherein the main portion (31) overlaps each of the first region (211B) and the second region (211C) when viewed in the first direction (z). [Appendix 24] the sealing resin (50) has a first side surface (53) facing in a direction perpendicular to the first direction (z), The semiconductor device (A10) according to Appendix 17, wherein a portion of each of the first terminal (21) and the third terminal (23) protrudes from the first side surface (53). [Appendix 25] The semiconductor device (A10) according to Appendix 24, wherein a portion of the second terminal (22) protrudes from the first side surface (53). [Explanation of symbols]

[0065] A10, A11, A12, A13, A20, A30: Semiconductor device 10: Semiconductor element 11,12,13: 1st electrode, 2nd electrode, 3rd electrode 11A: 2nd side 21: 1st terminal 211: First Inner Section 211A: Front page 212: First Outer Section 22: 2nd terminal 221: Second Inner Section 222: Second Outer Section 223: Pad section 223A: Mounting surface 223B: Back side 23: 3rd terminal 231: Third Inner Division 232: Third Outer Division 29: Bonding layer 30: First wire 31: Main section 32,33: 1st joint, 2nd joint 331,332: Part 1, Part 2 40: Second wire 50: Sealing resin 51,52: 3rd side, 4th side 53,54: 1st side, 2nd side 80:Joint tool 81: Wedge section 82: Guide section 83: Cutting section 89: Metal materials S1, S2: 1st cross section, 2nd cross section d1~d4: 1st interval to 4th interval z,x,y: 1st direction, 2nd direction, 3rd direction

Claims

1. a semiconductor element having a first electrode located on one side in a first direction; a first terminal electrically connected to the first electrode; a first wire conductively connected to the first electrode and the first terminal; the first wire has a main portion, a first joint portion connected to one end of the main portion, and a second joint portion connected to the other end of the main portion; the first joint portion is conductively joined to the first electrode, the second joint portion is conductively joined to the first terminal, When viewed in the first direction, the direction in which the second joint portion extends is different from the direction in which the main portion extends.

2. The semiconductor device according to claim 1 , wherein, when viewed in the first direction, a direction in which the first joint portion extends is different from a direction in which the main portion extends.

3. The semiconductor device according to claim 2 , wherein a direction in which the second joint portion extends is different from a direction in which the first joint portion extends when viewed in the first direction.

4. the first terminal has a first surface that faces one side in the first direction and to which the second joint portion is conductively joined; the main portion includes a first cross section and a second cross section that are transverse cross sections with respect to a direction in which the main portion extends; the first cross section is located farthest from the first surface in the first direction, the second cross section forms a boundary between the main portion and the second joint portion, 3. The semiconductor device according to claim 2, wherein a ratio of a second distance between the first surface and the first cross section in the first direction to a first distance between the first cross section and the second cross section when viewed in the first direction is 25% or more.

5. The semiconductor device according to claim 4 , wherein the dimension of said first cross section in said first direction is larger than the dimension of said semiconductor element in said first direction.

6. the first electrode has a second surface that faces the same side as the first surface in the first direction and is conductively joined to the first joint portion; The semiconductor device according to claim 4 , wherein the first surface is located between the second surface and the first cross section in the first direction.

7. 7. The semiconductor device according to claim 6, wherein a sum of said second distance and a dimension of said first cross section in said first direction is smaller than a third distance between said first surface and said second surface in said first direction.

8. the second joint portion includes a first portion connected to the main portion and a second portion located on the opposite side of the main portion with respect to the first portion, The semiconductor device according to claim 7 , wherein the dimension of said second portion in said first direction is smaller than the dimension of said second cross section in said first direction.

9. The semiconductor device according to claim 8 , wherein, when viewed in the first direction, a dimension of said second portion in the direction in which said second portion extends is smaller than a dimension of said first portion in the direction in which said second portion extends.

10. The semiconductor device according to claim 9 , wherein the dimension of said second portion in said first direction gradually decreases with increasing distance from said first portion.

11. further comprising a sealing resin that covers the semiconductor element and the first wire; 11. The semiconductor device according to claim 6, wherein the first terminal is exposed from the sealing resin.

12. the sealing resin has a third surface facing the same side as the first surface in the first direction; 12 . The semiconductor device according to claim 11 , wherein a fourth distance between said third surface and said first cross section in said first direction is greater than a sum of said second distance and a dimension of said first cross section in said first direction.

13. The semiconductor device according to claim 11 , wherein the first wire includes aluminum.

14. The semiconductor device according to claim 11 , wherein the first wire comprises copper.

15. a second terminal that is electrically connected to the semiconductor element and is exposed from the sealing resin; the semiconductor element has a second electrode located on the opposite side to the first electrode in the first direction; The semiconductor device according to claim 11 , wherein the second electrode is conductively connected to the second terminal.

16. the second terminal has a back surface facing the opposite side to the second surface in the first direction, The semiconductor device according to claim 15 , wherein the back surface is exposed from the sealing resin.

17. a third terminal that is electrically connected to the semiconductor element and is exposed from the sealing resin; the semiconductor element has a third electrode located on the same side as the first electrode in the first direction; The semiconductor device according to claim 16 , wherein the third terminal is electrically connected to the third electrode.

18. a second wire conductively coupled to the third electrode and the third terminal; The semiconductor device according to claim 17 , wherein the second wire is covered with the sealing resin.

19. The semiconductor device according to claim 18 , wherein a diameter of the second wire is smaller than a dimension of the first cross section in the first direction.

20. forming a first wire conductively bonded to the semiconductor element and the first terminal; the semiconductor element has a first electrode located on one side in a first direction; the first wire has a main portion, a first joint portion connected to one end of the main portion and conductively joined to the first electrode, and a second joint portion connected to the other end of the main portion and conductively joined to the first terminal; In the step of forming the first wire, the first joint portion, the main portion, and the second joint portion are formed in this order by processing a metal material using a joining tool; A method for manufacturing a semiconductor device, wherein when forming the second joint portion, the joining tool is rotated around the first direction, and then the second joint portion is separated from the metal material.

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