Semiconductor device and power conversion device
JP2025174867APending Publication Date: 2025-11-28MITSUBISHI ELECTRIC CORP
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Patent Information
- Application Number
- JP2025061318
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-05-16
- Filing Date
- 2025-04-02
- Publication Date
- 2025-11-28
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Figure 2025174867000001_ABST
Abstract
To sufficiently suppress electromagnetic noise in an IGBT structure.SOLUTION: Inside a trench 8, an upper electrode 14 and a lower electrode 12 are separated by an intermediate insulating film 16. A first resistor R1 is connected between the upper electrode 14 and an input terminal 10. A second resistor R2 is connected between the lower electrode 12 and the input terminal 10. The gate-emitter capacitance of the lower electrode 12 is smaller than the gate-emitter capacitance of the upper electrode 14.SELECTED DRAWING: Figure 1
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