Igniter and internal combustion engine ignition system

Abstract

To provide an igniter which can appropriately protect a switching element from surge voltage, and an internal combustion engine ignition system.SOLUTION: An igniter A1 includes: a switching element 1 having a first electrode 11, a second electrode 12, and a third electrode 13 for controlling electric conduction states of the first electrode 11 and the second electrode 12; and a control circuit 2, and further includes a first diode 3 electrically connected between the first electrode 11 and the second electrode 12.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to igniters and internal combustion engine ignition systems. [Background technology]

[0002] An internal combustion engine ignition system equipped with an igniter is used to achieve ignition in an internal combustion engine such as an internal combustion engine. Patent Document 1 discloses a conventional internal combustion engine ignition system equipped with an igniter. The internal combustion engine ignition system disclosed in this document includes an igniter, a control device, a battery, an ignition coil, and a spark plug. The conduction of DC power supplied from the battery is controlled by a switching element of the igniter. The control device controls the operation of the igniter. Power from the battery is supplied to a spark plug 84 via the ignition coil. Ignition is achieved by generating a spark in the spark plug 84. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2019-163730

[0004] [overview] When an igniter malfunctions, a surge voltage can occur that affects the switching element. Due to recent performance requirements, surge voltages tend to become higher. Furthermore, the surge pulse width of surge voltages tends to become very short, on the order of several tens of nanoseconds.

[0005] The present disclosure has been made in light of the above-mentioned circumstances, and an object of the present disclosure is to provide an igniter and an internal combustion engine ignition system that can more appropriately protect a switching element from surge voltages.

[0006] An igniter provided by a first aspect of the present disclosure comprises a switching element having a first electrode, a second electrode, and a third electrode for controlling the conduction state of the first electrode and the second electrode, a control circuit, and further comprises a first diode electrically connected between the first electrode and the second electrode.

[0007] An internal combustion engine ignition system provided by a second aspect of the present disclosure includes an igniter provided by the first aspect of the present disclosure, a control device connected to the control circuit, a battery, an ignition coil connected to the battery and the switching element, and an ignition plug connected to the battery via the ignition coil.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a circuit diagram showing an igniter and an internal combustion engine ignition system according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view showing a semiconductor module of the igniter according to the first embodiment of the present disclosure. [Figure 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Figure 5] FIG. 5 is a cross-sectional view taken along line VV in FIG. [Figure 6] FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. [Figure 7] FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a circuit diagram showing a switching element of the semiconductor module of the igniter according to the first embodiment of the present disclosure. [Figure 9]FIG. 9 is a plan view showing a switching element of a semiconductor module of an igniter according to the first embodiment of the present disclosure. [Figure 10] FIG. 10 is a partially enlarged cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 11 is a partially enlarged cross-sectional view taken along line XI-XI in FIG. [Figure 12] FIG. 12 is a circuit diagram showing an igniter and an internal combustion engine ignition system according to the second embodiment of the present disclosure. [Figure 13] FIG. 13 is a plan view showing an igniter according to the second embodiment of the present disclosure. [Figure 14] FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. [Figure 15] FIG. 15 is a plan view showing a first modified example of the igniter according to the second embodiment of the present disclosure. [Figure 16] FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. [Figure 17] FIG. 17 is a circuit diagram showing an igniter and an internal combustion engine ignition system according to a third embodiment of the present disclosure.

[0010] [Detailed explanation] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0011] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0012] In this disclosure, unless otherwise specified, the terms "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, the terms "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, the term "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in this disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0013] 1 to 11 show an igniter and an internal combustion engine ignition system according to a first embodiment of the present disclosure. The internal combustion engine ignition system B1 of this embodiment includes an igniter A1, a control device 81, a battery 82, an ignition coil 83, and an ignition plug 84. The internal combustion engine ignition system B1 may be used to ignite a fuel mixture or the like in an internal combustion engine such as a gasoline engine, a hydrogen engine, or an ammonia engine that serves as a driving source for a vehicle.

[0014] FIG. 1 is a circuit diagram showing an igniter A1 and an internal combustion engine ignition system B1. FIG. 2 is a plan view showing a semiconductor module C1 of the igniter A1. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2. FIG. 5 is a cross-sectional view taken along line VV in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a circuit diagram showing a switching element 1 of the semiconductor module C1 of the igniter A1. FIG. 9 is a plan view showing the switching element 1 of the semiconductor module C1 of the igniter A1. FIG. 10 is a partially enlarged cross-sectional view taken along line XX in FIG. 9. FIG. 11 is a partially enlarged cross-sectional view taken along line XI-XI in FIG. 9.

[0015] The control device 81 is, for example, an electronic control unit for controlling the operation of the engine, and is realized by a microcomputer equipped with a CPU and a memory. The control device 81 may be referred to as an ECU (Electronic Control Unit). For example, the control device 81 generates an ignition instruction signal that indicates the ignition timing of the spark plug 84 as a periodic signal synchronized with the rotation of the engine. The control device 81 outputs the ignition instruction signal to the igniter A1.

[0016] The ignition coil 83 generates a high voltage for discharging the spark plug 84. The ignition coil 83 includes a primary coil and a secondary coil. One terminal of the primary coil is connected to the battery 82, and the other terminal is connected to the output terminal of the igniter A1. One terminal of the secondary coil is connected to the battery 82, and the other terminal is connected to the spark plug 84.

[0017] The spark plugs 84 are provided for each cylinder of the engine (not shown), and cause the air-fuel mixture in the engine to explode by discharging electricity.

[0018] The igniter A1 controls the discharge of the spark plug 84 based on, for example, an ignition command signal input from the control device 81. Specifically, the igniter A1 controls the current flowing through the primary coil of the ignition coil 83 based on the ignition command signal. For example, the igniter A1 passes current through the primary coil while the ignition command signal is at a high level. The igniter A1 cuts off the current flowing through the primary coil when the ignition command signal switches from a high level to a low level. This generates a back electromotive force of several hundred volts in the primary coil of the ignition coil 83. At this time, a high voltage of, for example, several tens of kV, calculated by multiplying the primary side voltage by the turns ratio, is generated in the secondary coil of the ignition coil 83. The spark plug 84 discharges due to the high voltage applied from the secondary coil.

[0019] The igniter A1 of this embodiment includes a control circuit 2 and a semiconductor module C1.

[0020] The control circuit 2 controls the igniter A1 and is, for example, a functional IC monolithically integrated on a semiconductor substrate. The control circuit 2 controls the switching element 1 of the igniter A1 based on an ignition instruction signal input from the control device 81. The control circuit 2 may also monitor the current flowing through the primary coil of the ignition coil 83, generate an ignition confirmation signal, and output it to the control device 81. The control circuit 2 may also have a current limiting function that limits the current flowing through the switching element 1 to a predetermined upper limit value or less, and a timer protection function that forcibly turns off the switching element 1 when a predetermined waiting period (for example, approximately 100 ms) has elapsed while the ignition instruction signal remains at the on logic level.

[0021] The control circuit 2 may include a driving unit 21 and an ignition confirmation unit 22 .

[0022] The driver 21 controls the switching element 1. The driver 21 controls the gate voltage of the switching element 1 in response to an ignition instruction signal input from the control device 81, thereby controlling the on / off of the switching element 1. The driver 21 includes, for example, a high-frequency filter, a comparator, a delay circuit, and a driver (not shown). The high-frequency filter removes high-frequency noise from the ignition instruction signal and outputs it to the comparator. The comparator compares the ignition instruction signal, from which high-frequency noise has been removed, with a threshold value to determine the level (high or low). The comparator outputs the determination result as a determination signal to the delay circuit. The delay circuit imparts a predetermined delay to the determination signal and outputs it to the driver. The driver generates and outputs a gate drive signal of a level sufficient to drive the switching element 1 based on the determination signal. The driver 21 may turn on the switching element 1 while the ignition instruction signal is at a high level, and turn off the switching element 1 while the ignition instruction signal is at a low level. When the ignition instruction signal switches from high level to low level, the switching element 1 switches from on to off. This generates a high voltage in the secondary coil of the ignition coil 83, and the high voltage is applied to the spark plug 84.

[0023] The ignition confirmation unit 22 generates an ignition confirmation signal based on the current flowing through the primary coil of the ignition coil 83 and outputs the signal to the control device 81. The ignition confirmation unit 22 generates the ignition confirmation signal, for example, by comparing the current with a reference current. The semiconductor module C1 or the igniter A1 may appropriately include a resistor (not shown) for the ignition confirmation unit 22 to detect the current.

[0024] The semiconductor module C1 is a module incorporated into the igniter A1. In the semiconductor module C1, the control circuit 2 and the igniter A1 may be mounted on, for example, the same circuit board (not shown). The semiconductor module C1 includes a switching element 1, a first diode 3, a first lead 41, a second lead 42, a third lead 43, a connecting member 51, a connecting member 52, a connecting member 53, and a sealing resin 6.

[0025] Now, the switching element 1 will be described in detail with reference to FIGS.

[0026] The switching element 1 is suitable for use in the internal combustion engine ignition system B1. The specific configuration of the switching element 1 is not limited in any way. The switching element 1 may include an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), or the like. In this embodiment, the switching element 1 may include an IGBT.

[0027] 8, the switching element 1 includes an IGBT 1A, a second diode 14, a third diode 15, a gate resistor circuit R, and a third electrode 13. The IGBT 1A includes a collector electrode (C), an emitter electrode (E), and a gate electrode (G).

[0028] The gate resistance circuit R is connected between the third electrode 13 and the gate electrode (G) of the IGBT 1A. The gate resistance circuit R is made up of a parallel circuit of a first gate resistance R1 and a second gate resistance R2.

[0029] The second diode 14 is connected between the second electrode 12 and the third electrode 13. The third diode 15 is connected between the first electrode 11 and the third electrode 13.

[0030] As shown in FIGS. 8 to 11, the switching element 1 includes a second electrode 12, a third electrode 13, gate fingers 16, and an EQR electrode 17 formed on its front surface side (first side z1 in the z direction). In this embodiment, the second electrode 12, the third electrode 13, the gate fingers 16, and the EQR electrode 17 have a laminated structure including a Ti film and an Al alloy film (e.g., an AlSiCu alloy film) formed in this order from the main body 10 side. In this embodiment, the second electrode 12 is an emitter electrode, and the third electrode 13 is a gate electrode. The switching element 1 also includes a first electrode 11 covering the back surface (second side z2 in the z direction) of the main body 10. The first electrode 11 forms ohmic contact with the semiconductor substrate 101. In this embodiment, the first electrode 11 is a collector electrode.

[0031] The second electrode 12 is formed so as to cover an active region 1001 of the switching element 1. The active region 1001 is provided in the inner part of the main body 10 in plan view. The active region 1001 is a region where the IGBT 1A is formed.

[0032] The second electrode 12 is formed over almost the entire active region 1001 .

[0033] An outer peripheral region 1002 is provided outside the active region 1001 in the main body 10, surrounding the active region 1001. The third electrode 13 and the gate finger 16 are formed in the outer peripheral region 1002.

[0034] The gate finger 16 has an annular shape with ends in a plan view. In the present disclosure, an annular shape includes a circular annular shape, a square annular shape, a polygonal annular shape, etc. One end of the gate finger 16 is spaced apart from the third electrode 13 in the y direction and is spaced apart from the third electrode 13 in the x direction. The other end of the gate finger 16 is spaced apart from the protruding portion of the third electrode 13 in the y direction and is spaced apart from the third electrode 13 in the x direction.

[0035] An intermediate portion between one end and the other end of the gate finger 16 extends along the outer periphery of the second electrode 12 in a plan view.

[0036] The EQR electrode 17 is formed in the outer circumferential region 1002, outside the gate fingers 16. The EQR electrode 17 is formed along the outer circumferential edge of the main body 10 in a plan view. The EQR electrode 17 is formed in a quadrangular ring shape in a plan view.

[0037] The switching element 1 includes a passivation film 181 that covers the second electrode 12, the third electrode 13, the gate fingers 16, and the EQR electrode 17. The passivation film 181 collectively covers the second electrode 12, the third electrode 13, the gate fingers 16, and the EQR electrode 17. The passivation film 181 has a first pad opening 1811 and a second pad opening 1812 that expose a portion of the second electrode 12 and a portion of the third electrode 13, respectively. The passivation film 181 includes, for example, polyimide.

[0038] A part of the second electrode 12 is exposed as a pad portion 121 from the first pad opening 1811, and a part of the third electrode 13 is exposed as a pad portion 131 from the second pad opening 1812. A bonding material such as a bonding wire may be bonded to each of the pad portions 121, 131 when packaging the switching element 1.

[0039] The switching element 1 includes an EQR wiring (not shown) arranged below the EQR electrode 17. The EQR wiring is arranged along the EQR electrode 17 and has a ring shape (a square ring shape in this embodiment) in plan view. The EQR wiring is electrically connected to the EQR electrode 17. In this embodiment, the EQR wiring includes conductive polysilicon.

[0040] The switching element 1 includes a gate wiring (not shown) that is arranged to pass under the protruding portion of the third electrode 13 and the gate finger 16. The gate wiring has a quadrangular ring shape in plan view. In this embodiment, the gate wiring includes conductive polysilicon.

[0041] The protruding portion of the third electrode 13 is electrically connected to the gate wiring via a contact, and the gate finger 16 is electrically connected to the gate wiring via a contact.

[0042] A first gate resistor R1 is formed by a portion of the gate wiring between contacts, and a second gate resistor R2 is formed by another portion of the gate wiring between contacts.

[0043] As a result, the protruding portion of the third electrode 13 is electrically connected to the gate finger 16 via the contact, the first gate resistor R1, and other contacts, and is also electrically connected to the gate finger 16 via the contact, the second gate resistor R2, and other contacts. In other words, the third electrode 13 is connected to the gate finger 16 via a parallel circuit with the first gate resistor R1 and the second gate resistor R2 (the gate resistor circuit R in FIG. 1).

[0044] The switching element 1 includes a second diode 14 having one end electrically connected to the third electrode 13 and the other end electrically connected to the second electrode 12. The switching element 1 includes a first diode forming body 140 for forming the second diode 14.

[0045] The first diode forming body 140 extends from below the third electrode 13 to below the peripheral edge of the second electrode 12. In this embodiment, the first diode forming body 140 is made of conductive polysilicon.

[0046] The first diode forming body 140 has a rectangular shape that is elongated in the y direction in plan view. The first diode forming body 140 is larger than the main portion of the third electrode 13. One side edge in the x direction of the first diode forming body 140 is disposed at a distance from one side edge in the x direction of the main portion of the third electrode 13. The other side edge in the x direction of the first diode forming body 140 extends below the second electrode 12, beyond the other side edge in the x direction of the main portion 5A. Both end edges in the y direction of the first diode forming body 140 each extend below the second electrode 12, beyond the corresponding end edges in the y direction of the main portion of the third electrode 13.

[0047] The main portion of the third electrode 13 is electrically connected to the first diode forming body 140 via a contact. The second electrode 12 is electrically connected to the first diode forming body 140 via a contact.

[0048] The switching element 1 includes a third diode 15 having one end electrically connected to the straight portion of the gate finger 16 and the other end electrically connected to the straight portion of the EQR electrode 17. The switching element 1 includes a second diode-forming body 150 for forming the third diode 15.

[0049] The second diode formation 150, in this embodiment, extends from below the periphery of the second electrode 12 inside the gate fingers 16, passing below the gate fingers 16, and to the EQR electrode 17. The second diode formation 150, in this embodiment, comprises conductive polysilicon.

[0050] The straight portion of the gate finger 16 is electrically connected to the second diode forming body 150 via a contact. The EQR electrode 17 is electrically connected to the second diode forming body 150 via a contact.

[0051] 3 to 5, switching element 1 includes a main body 10. Main body 10 has p + a type semiconductor substrate 101 and an n-type semiconductor layer formed on the semiconductor substrate 101; +The semiconductor device includes an n-type buffer layer 102 and an n-type epitaxial layer 103 formed on the buffer layer 102 .

[0052] In this embodiment, the semiconductor substrate 101 is a p + The substrate may be a semiconductor substrate (for example, a silicon substrate) of the same type, or may be a substrate generally used for transistors, such as a SiC substrate or a GaN substrate.

[0053] As p-type impurities, B (boron), Al (aluminum), Ga (gallium), etc. can be applied. As n-type impurities, P (phosphorus), As (arsenic), Sb (antimony), H (hydrogen) etc. can be applied.

[0054] p + The impurity concentration of the semiconductor substrate 101 is, for example, 1×10 18 cm -3 1×10 20 cm -3 Examples of p-type impurities are as described above.

[0055] The buffer layer 102 may be, for example, p + On the semiconductor substrate 101, an n-type impurity is implanted and epitaxially grown. - Examples of n-type impurities are as described above.

[0056] The epitaxial layer 103 is, for example, + Alternatively, an n-type layer may be epitaxially grown on the n-type buffer layer 102 while implanting n-type impurities. Examples of n-type impurities are as described above. - The impurity concentration of the n-type epitaxial layer 103 is lower than that of the buffer layer 102. The n-type region in the epitaxial layer 103 may be referred to as an n-type drift region 1031.

[0057] As shown in FIG. 10, in the active region 1001, a plurality of IGBT element structures are formed in the surface layer portion of the main body portion 10 (the surface layer portion of the epitaxial layer 103).

[0058] A gate insulating film 182 is selectively formed on the main body 10. The gate insulating film 182 may be made of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a hafnium oxide film, an alumina film, or a tantalum oxide film.

[0059] The third electrode 13 is formed on the gate insulating film 182. The third electrode 13 faces the channel region via the gate insulating film 182. The third electrode 13 is formed in substantially the same pattern as the gate insulating film 182.

[0060] An interlayer insulating film 183 is formed on the epitaxial layer 103. The interlayer insulating film 183 covers the gate electrode 50. The interlayer insulating film 183 may be made of an insulating material such as a silicon oxide film, a silicon nitride film, or TEOS (tetraethoxysilane).

[0061] A second electrode 12 is formed on the interlayer insulating film 183. The second electrode 12 may be made of aluminum or another metal. The second electrode 12 is connected to the body contact region and the emitter region.

[0062] As shown in FIG. 11, in the peripheral portion of the outer peripheral region 1002, the surface layer portion of the main body 10 (the surface layer portion of the epitaxial layer 103) has n ++ An n-type channel stopper region 191 is formed in the drift region 1031. The channel stopper region 191 has a higher n-type impurity concentration than the drift region 1031. The channel stopper region 191 may have the same n-type impurity concentration as the emitter region 46.

[0063] In the outer periphery region 1002, a first main surface insulating film 189 is formed at a distance from the outer periphery of the main body part 10. The first main surface insulating film 189 is formed along the outer periphery of the main body part 10.

[0064] A field insulating film 184 is formed in the main body 10 in a region inward of the first main surface insulating film 189 in the outer periphery region 1002. The field insulating film 184 is formed along the inner periphery of the first main surface insulating film 189. The outer periphery of the field insulating film 184 is connected to the inner periphery of the first main surface insulating film 189. The field insulating film 184 is made of, for example, a LOCOS (Local oxidation of silicon) oxide film. The film thickness of the field insulating film 184 is thicker than that of the first main surface insulating film 189.

[0065] An EQR electrode 17 is formed on first main surface insulating film 189 and field insulating film 184 so as to cover the entire surface of first main surface insulating film 189 and a portion of the surface of field insulating film 184 closer to first main surface insulating film 189. A plurality of field plates are arranged at intervals on field insulating film 184 in a region inward of EQR electrode 17.

[0066] In the peripheral region 1002, an interlayer insulating film 183 is formed on the main body 10. An opening is formed in the interlayer insulating film 183 to expose a part of the surface of the channel stopper region 191 and the peripheral edge of the surface of the EQR electrode 17.

[0067] The EQR electrode 17 is electrically connected to the first electrode 11 via the channel stopper region 191, the drift region 1031, the buffer layer 102, and the semiconductor substrate 101. The exposed surfaces of the EQR electrode 17 and the interlayer insulating film 183 are covered with a passivation film 181.

[0068] At the boundary between the peripheral region 1002 and the active region 1001, a p-type well region 192 is formed in the main body 10.

[0069] As shown in FIG. 10 , the first diode forming body 140 is formed on a gate insulating film 182. The first diode forming body 140 extends from below the third electrode 13 to the second electrode 12. The first diode forming body 140 faces the p-type well region 192. The first diode forming body 140 is covered with an interlayer insulating film 183. A portion of the third electrode 13 and a portion of the second electrode 12 are formed on the interlayer insulating film 183.

[0070] The second diode 14 is formed in the region between the two contacts in the first diode forming body 140. The second diode 14 is formed by forming a plurality of n-type regions 14n and p-type regions 14p alternately in the x-direction in the first diode forming body 140. Specifically, the second diode 14 is formed by connecting a plurality of series-connected structures (pn junction structures) of the n-type regions 14n and the p-type regions 14p in series. One end of the second diode 14 is electrically connected to the third electrode 13 via a contact, and the other end of the second diode 14 is electrically connected to the second electrode 12 via another contact.

[0071] Note that the widths (lengths in the x direction) of the n-type regions 14n and p-type regions 14p shown in Fig. 10 do not represent their actual widths. Furthermore, the number of n-type regions 14n and p-type regions 14p is not limited to the number shown in Fig. 10 and can be set arbitrarily.

[0072] The area excluding the protruding portion of the third electrode 13, the peripheral edge of the main portion of the third electrode 13, and the center portion of the second electrode 12 is covered with a passivation film 181.

[0073] 11 , the second diode forming body 150 is formed on the field insulating film 184 and on the first main surface insulating film 189 to which the inner edge of the field insulating film 184 is connected. The second diode forming body 150 extends from below the peripheral edge of the second electrode 12 that faces the straight portion of the gate finger 16, passing below the straight portion of the gate finger 16, and to below the EQR electrode 17. The second diode forming body 150 is covered with the interlayer insulating film 183.

[0074] The third diode 15 is formed by forming a plurality of n-type regions 15n and p-type regions 15p alternately in the x direction in the second diode forming body 150. Specifically, the third diode 15 is configured by connecting a plurality of series-connected structures (pn junction structures) of n-type regions 15n and p-type regions 15p in series. It is preferable that 10 or more pn junction structures each consisting of an n-type region 15n and a p-type region 15p are connected in series.

[0075] Note that the widths (lengths in the x direction) of n-type regions 15n and p-type regions 15p shown in Fig. 11 do not represent actual widths. Furthermore, the number of n-type regions 15n and p-type regions 15p is not limited to the number shown in Fig. 11 and can be set arbitrarily.

[0076] The first diode 3 is electrically connected between the first electrode 11 and the second electrode 12. There are no particular limitations on the specific configuration of the first diode 3. In this embodiment, the first diode 3 is a Zener diode, and may also be a TVS (Transient Voltage Suppressor) diode.

[0077] When the first diode 3 is a TVS diode, it may be a unidirectional TVS diode or a bidirectional TVS diode, and in the illustrated example, it is a unidirectional TVS diode. When the first diode 3 is a TVS diode, the first diode 3 is normally in an OFF state and has the characteristic of breaking down in the event of abnormal operation such as when a surge voltage is applied.

[0078] In this embodiment, the withstand voltage of the first diode 3 is lower than the withstand voltage of the switching element 1. The withstand voltage of the first diode 3 may be 0.7 to 0.9 times the withstand voltage of the switching element 1. As an example of the withstand voltages of the switching element 1 and the first diode 3, the withstand voltage of the switching element 1 is, for example, 500 V to 800 V, and the withstand voltage of the first diode 3 is, for example, 350 V to 720 V.

[0079] The first diode 3 has a fourth electrode 31 and a fifth electrode 32. The fourth electrode 31 is electrically connected to the first electrode 11 of the switching element 1. The fifth electrode 32 is electrically connected to the second electrode 12 of the switching element 1. The fourth electrode 31 is, for example, an anode electrode, and the fifth electrode 32 is, for example, a cathode electrode.

[0080] The first lead 41 is a member on which the switching element 1 is mounted. The first lead 41 may include, for example, a metal such as Cu (copper) or Ni (nickel), or an alloy of Cu (copper) or Ni, or an alloy of Cu (copper) or Ni. The first lead 41 is formed, for example, by punching from a thin metal plate such as Cu (copper) that is rectangular in plan view. The method of forming the first lead 41 is not limited thereto, and the first lead 41 may also be formed by cutting, bending, or the like. The first lead 41 has a pad portion 415, an extending portion 416, a protruding portion 417, and a connecting portion 418.

[0081] The first lead 41 has a first main surface 411 and a first back surface 412. The first main surface 411 faces a first side z1 in the z direction, and the first back surface 412 faces a second side z2 in the z direction.

[0082] The pad portion 415 is a portion on which the switching element 1 and the first diode 3 are mounted. In this embodiment, the first electrode 11 of the switching element 1 and the first main surface 411 of the pad portion 415 are electrically connected by a first conductive bonding material 91. The fourth electrode 31 of the first diode 3 and the first main surface 411 of the pad portion 415 are electrically connected by a second conductive bonding material 92. The first conductive bonding material 91 and the second conductive bonding material 92 are, for example, solder, Ag paste, or the like. In the illustrated example, the first conductive bonding material 91 and the second conductive bonding material 92 are connected to each other and form an integrated conductive bonding material. The first conductive bonding material 91 and the second conductive bonding material 92 may be separated from each other.

[0083] The extending portion 416 is a portion that extends to one side in the y direction (the side where the connecting portion 425 and the connecting portion 435 described later are located) of the pad portion 415. The shape of the extending portion 416 is not particularly limited, and in the illustrated example, the extending portion 416 has a base portion 4161, a bent portion 4162, and a tip portion 4163.

[0084] The base portion 4161 extends from the pad portion 415 to one side in the y direction and has a shape that follows the y direction. The bent portion 4162 is connected to the tip of the base portion 4161 in the y direction and is a portion that is bent to a first side z1 in the z direction (upper side in FIG. 4) when viewed along the x direction. The tip portion 4163 is connected to the bent portion 4162 and extends from the bent portion 4162 along the y direction to one side in the y direction. In the example shown in the figure, a part of the tip portion 4163 protrudes from the sealing resin 6.

[0085] The protruding portion 417 is a portion located on the other side in the y direction with respect to the pad portion 415. The shape of the protruding portion 417 is not limited in any way, and in the example shown, it has a substantially elongated rectangular shape with the x direction as the longitudinal direction when viewed along the z direction, and most of it is exposed from the sealing resin 6.

[0086] The connecting portion 418 is a portion that connects the pad portion 415 and the protruding portion 417. As shown in Fig. 2, the connecting portion 418 in the illustrated example has a through-hole 4181. The through-hole 4181 penetrates the connecting portion 418 in the z-direction.

[0087] The second lead 42 is a member to which a connecting member 51, which will be described later, is joined. The second lead 42 may include, for example, a metal such as Cu (copper) or Ni (nickel), or an alloy of Cu (copper) and Ni, or a 42 alloy. The second lead 42 is formed, for example, by punching from a thin metal plate such as Cu that is rectangular in plan view. The method for forming the first lead 41 is not limited thereto, and the first lead 41 may also be formed by cutting, bending, or the like. The second lead 42 of this embodiment has a connecting portion 425 and a terminal portion 426.

[0088] A connecting member 51, which will be described later, is joined to the connecting portion 425. In this embodiment, the connecting portion 425 is located on one side in the y direction with respect to the pad portion 415 when viewed along the z direction, and on one side in the x direction with respect to the extending portion 416. In this embodiment, the connecting portion 425 is located on a first side z1 in the z direction (upper side in FIG. 4) of the pad portion 415 and the extending portion 416. The position of the connecting portion 425 is not limited thereto, and it may be located on a second side z2 in the z direction (lower side in FIG. 4) of the pad portion 415 and the extending portion 416, or may be located at approximately the same position in the z direction.

[0089] The terminal portion 426 is a portion that extends to one side in the y direction relative to the connection portion 425. The terminal portion 426 is used, for example, when mounting the semiconductor module C1 on a circuit board or the like. The shape of the terminal portion 426 is not particularly limited, and in the illustrated example, the terminal portion 426 has a root portion 4261, a bent portion 4262, and a tip portion 4263.

[0090] The root portion 4261 extends from the connecting portion 425 to one side in the y direction and has a shape that follows the y direction. A part of the root portion 4261 is exposed from the sealing resin 6. The bent portion 4262 is connected to the tip of the root portion 4261 in the y direction and is a portion that is bent to the second side z2 in the z direction (the lower side in FIG. 4) when viewed along the x direction. The tip portion 4263 is connected to the bent portion 4262 and extends from the bent portion 4262 along the y direction to one side in the y direction.

[0091] The third lead 43 is a member to which the connecting member 52 and the connecting member 53 described below are joined. The third lead 43 may include a metal such as Cu (copper) or Ni (nickel), or an alloy of Cu (copper) and Ni, or a 42 alloy. The third lead 43 is formed, for example, by punching from a thin metal plate such as Cu that is rectangular in plan view. The method of forming the first lead 41 is not limited thereto, and the first lead 41 may be formed by cutting, bending, or the like. The third lead 43 of this embodiment has a connecting portion 435 and a terminal portion 436.

[0092] A connecting member 52, which will be described later, is joined to the connecting portion 435. In this embodiment, the connecting portion 435 is located on one side in the y direction with respect to the pad portion 415 when viewed along the z direction, and on the other side in the x direction with respect to the extending portion 416. In this embodiment, the connecting portion 435 is located on a first side z1 in the z direction (upper side in FIG. 5) of the pad portion 415 and the extending portion 416. The position of the connecting portion 435 is not limited thereto, and it may be located on a second side z2 in the z direction (lower side in FIG. 5) of the pad portion 415 and the extending portion 416, or may be located at approximately the same position in the z direction.

[0093] The terminal portion 436 is a portion that extends to one side in the y direction relative to the connection portion 435. The terminal portion 436 is used, for example, when mounting the semiconductor module C1 on a circuit board or the like. The shape of the terminal portion 436 is not particularly limited, and in the illustrated example, the terminal portion 436 has a root portion 4361, a bent portion 4362, and a tip portion 4363.

[0094] The root portion 4361 extends from the connecting portion 435 to one side in the y direction and has a shape that follows the y direction. A part of the root portion 4361 is exposed from the sealing resin 6. The bent portion 4362 is connected to the tip of the root portion 4361 in the y direction and is a portion that is bent to the other side in the x direction (the lower side in FIG. 7) when viewed along the x direction. The tip portion 4363 is connected to the bent portion 4362 and extends from the bent portion 4362 to one side in the y direction.

[0095] The connecting member 51 is for electrically connecting the third electrode 13 of the switching element 1 and the second lead 42. There are no particular limitations on the specific configuration of the connecting member 51, and examples thereof include wires and ribbons made of metal. Examples of metals constituting the connecting member 51 include metals such as Al (aluminum), Au (gold), and Cu (copper), as well as alloys thereof. Examples of Al alloys include Al alloys in which any of Fe (iron), Si (silicon), and Ni (nickel) is added to Al (aluminum). In this embodiment, the connecting member 51 is a wire made of Au (gold).

[0096] 2 and 3, the connecting member 51 has a bonding portion 511, a bonding portion 512, and a loop portion 510. The bonding portion 511 is a portion connected to the third electrode 13 of the switching element 1. The bonding portion 512 is a portion connected to the connection portion 425. In this embodiment, the third electrode 13 to which the bonding portion 511 is connected is located on a first side z1 in the z direction from the connection portion 425 to which the bonding portion 512 is connected. The loop portion 510 is interposed between the bonding portion 511 and the bonding portion 512, and has a shape that bulges out toward the z1 side in the z direction.

[0097] As shown in FIGS. 2 and 5, the connecting member 52 is for electrically connecting the second electrode 12 of the switching element 1 and the third lead 43. The specific configuration of the connecting member 52 is not limited, and examples thereof include a wire and ribbon made of a metal. Examples of metals constituting the connecting member 52 include metals such as Al (aluminum), Au (gold), and Cu (copper), as well as alloys thereof. Examples of Al alloys include Al alloys obtained by adding any of Fe (iron), Si (silicon), and Ni (nickel) to Al (aluminum). In this embodiment, the connecting member 52 is a wire made of Al (aluminum) or an Al alloy. In this case, the diameter of the connecting member 52 is larger than the diameter of the connecting member 51.

[0098] The connecting member 52 has a bonding portion 521, a bonding portion 522, and a loop portion 520. The bonding portion 521 is a portion connected to the second electrode 12 of the switching element 1. The bonding portion 522 is a portion connected to the connection portion 435. In this embodiment, the second electrode 12 to which the bonding portion 521 is connected is located on a first side z1 in the z direction from the connection portion 435 to which the bonding portion 522 is connected. The loop portion 520 is interposed between the bonding portion 521 and the bonding portion 522, and has a shape that bulges out toward the z1 side in the z direction.

[0099] As shown in FIGS. 2 and 6 , the connection member 53 is used to electrically connect the fifth electrode 32 of the first diode 3 and the third lead 43. The specific configuration of the connection member 53 is not limited, and examples thereof include a wire and ribbon made of a metal. Examples of metals constituting the connection member 53 include metals such as Al (aluminum), Au (gold), and Cu (copper), as well as alloys thereof. Examples of Al alloys include Al alloys obtained by adding any of Fe (iron), Si (silicon), and Ni (nickel) to Al (aluminum). In this embodiment, the connection member 53 is a wire made of Al (aluminum) or an Al alloy. In this case, the diameter of the connection member 53 is larger than the diameter of the connection member 51. The diameter of the connection member 53 may be the same as or smaller than the diameter of the connection member 52.

[0100] The connecting member 53 has a bonding portion 531, a bonding portion 532, and a loop portion 530. The bonding portion 531 is a portion connected to the fifth electrode 32 of the first diode 3. The bonding portion 532 is a portion connected to the connection portion 435. In this embodiment, the fifth electrode 32 to which the bonding portion 531 is connected is located on a first side z1 in the z direction from the connection portion 435 to which the bonding portion 532 is connected. The loop portion 530 is interposed between the bonding portion 531 and the bonding portion 532, and has a shape that bulges out toward the z1 side in the z direction.

[0101] The sealing resin 6 covers the switching element 1, the first diode 3, a portion of the first lead 41, the second lead 42, and the third lead 43, as well as the connecting member 51, the connecting member 52, and the connecting member 53. The sealing resin 6 is a thermosetting synthetic resin having electrical insulation properties. In this embodiment, the sealing resin 6 is a black epoxy resin, and a filler may be mixed in as appropriate. The sealing resin 6 has a resin main surface 61, a resin back surface 62, and a resin side surface 63.

[0102] The resin main surface 61 and the resin back surface 62 face opposite each other in the z direction and are spaced apart. The resin main surface 61 faces the same direction as the element main surface 1a, and the resin back surface 62 faces the same direction as the element back surface 1b. The resin side surface 63 contacts the resin main surface 61 and the resin back surface 62.

[0103] In this embodiment, the first rear surface 412 is exposed from the resin rear surface 62. Furthermore, the extending portion 416, the protruding portion 417, the terminal portion 426, and the terminal portion 436 protrude from the resin side surface 63.

[0104] Next, the operation of the igniter A1 and the internal combustion engine ignition system B1 will be described.

[0105] 1, a first diode 3 is connected between the first electrode 11 and the second electrode 12. This reduces the voltage applied to the switching element 1 when a surge voltage occurs due to abnormal operation. This allows the switching element 1 to be more appropriately protected from the surge voltage.

[0106] The first diode 3 is a Zener diode and also a TVS diode, which allows a path with small parasitic capacitance and resistance components to be provided between the first electrode 11 and the second electrode 12. This allows the switching element 1 to be more appropriately protected even if the surge pulse of the surge voltage is an extremely short pulse, such as several tens of nanoseconds.

[0107] The switching element 1 has a second diode 14 and a third diode 15. This allows the IGBT 1A inside the switching element 1 to be protected more appropriately.

[0108] The switching element 1 and the first diode 3 are both built into the semiconductor module C1. The switching element 1 and the first diode 3 are both mounted on the pad portion 415. This makes it possible to further reduce the parasitic capacitance component and the parasitic resistance component between the switching element 1 and the first diode 3.

[0109] The first conductive bonding material 91 and the second conductive bonding material 92 are connected to each other, which is preferable for reducing the above-mentioned parasitic capacitance component and parasitic resistance component.

[0110] 12 to 17 show other embodiments and modifications of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each of the modifications and embodiments can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0111] 12 to 14 show an igniter and an internal combustion engine ignition system according to a second embodiment of the present disclosure. The internal combustion engine ignition system B2 of this embodiment includes an igniter A2, a control device 81, a battery 82, an ignition coil 83, and an ignition plug 84. The igniter A2 is configured by a semiconductor module C2. In this embodiment, a control circuit 2 is built into the semiconductor module C2.

[0112] 13 and 14, the semiconductor module C2 includes a switching element 1, a control circuit 2, a first diode 3, a first lead 41, a fourth lead 44, a fifth lead 45, a sixth lead 46A, a sixth lead 46B, an eighth lead 48, and a ninth lead 49. The semiconductor module C2 may also include a resistor R3, a capacitor MC1, and a capacitor MC2. The semiconductor module C2 may also include passive elements such as resistors and capacitors (not shown) as appropriate. The semiconductor module C2 may be referred to as an IPM (Intelligent Power Module), for example.

[0113] The pad portion 415 of this embodiment has a groove 4151. The groove 4151 is recessed from the first main surface 411 toward a second side z2 in the z direction. When viewed in the z direction, the groove 4151 is annular. When viewed in the z direction, the first conductive bonding material 91 and the switching element 1 are located in a region surrounded by the groove 4151. The first conductive bonding material 91 may be in contact with the groove 4151. When viewed in the z direction, the second conductive bonding material 92 and the first diode 3 are located outside the groove 4151.

[0114] The fourth lead 44, the fifth lead 45, the sixth lead 46A, the sixth lead 46B, the eighth lead 48 and the ninth lead 49 are, for example, conductive members each containing a metal or an alloy, similar to the first lead 41.

[0115] The control circuit 2 is mounted on the fourth lead 44. The control circuit 2 is connected to the fourth lead 44 by a connection member 54. The third electrode 13 and the control circuit 2 are connected by a connection member 51.

[0116] The sixth lead 46A and the sixth lead 46B are connected to the control circuit 2 by connecting members 54, respectively.

[0117] The eighth lead 48 is connected to the second electrode 12 by a connection member 52. The eighth lead 48 is connected to the control circuit 2 by a connection member 54. The eighth lead 48 is connected to the fourth lead 44 by a connection member 55.

[0118] The fourth lead 44 and the fifth lead 45 are connected via a capacitor MC1. The capacitor MC1 may be, for example, a multi-layer ceramic capacitor (MLCC).

[0119] The fourth lead 44 and the ninth lead 49 are connected via a capacitor MC2, which may be, for example, a multi-layer ceramic capacitor (MLCC).

[0120] The fifth lead 45 and the ninth lead 49 are connected by a resistor R3.

[0121] In this embodiment, the sealing resin 6 covers the switching element 1, the control circuit 2, the first diode 3, the connection member 51, the connection member 52, the connection member 53, the connection member 54, and the connection member 55, as well as at least a portion of each of the first lead 41, the fourth lead 44, the fifth lead 45, the sixth lead 46A, the sixth lead 46B, the eighth lead 48, and the ninth lead 49.

[0122] This embodiment can more appropriately protect the switching element 1 from surge voltages. As can be understood from this embodiment, the igniter of the present disclosure may include a semiconductor module C2 configured as an IPM.

[0123] By positioning the first conductive bonding material 91 and the switching element 1 in the area surrounded by the groove portion 4151, it is possible to prevent the first conductive bonding material 91 from unduly spreading over a wider area of ​​the pad portion 415.

[0124] 15 and 16 show a first modified example of the semiconductor module C2 (igniter A2). The semiconductor module C21 (igniter A21) of this modified example differs from the semiconductor module C2 mainly in the configuration relating to the groove portion 4151.

[0125] In this modification, the switching element 1, the first diode 3, the first conductive bonding material 91, and the second conductive bonding material 92 are located in an area surrounded by the groove 4151 when viewed in the z direction. The first conductive bonding material 91 and the second conductive bonding material 92 are connected to each other and form an integrated conductive bonding material. The first conductive bonding material 91 and the second conductive bonding material 92 may be in contact with the groove 4151.

[0126] This modification allows the switching element 1 to be more appropriately protected from surge voltages. The switching element 1, the first diode 3, the first conductive bonding material 91, and the second conductive bonding material 92 are located in the area surrounded by the groove 4151. This configuration allows the first conductive bonding material 91 and the second conductive bonding material 92 to be more reliably connected, and the first conductive bonding material 91 and the second conductive bonding material 92 can be configured to form an integrated conductive bonding material. As a result, the distance between the switching element 1 and the first diode 3 can be further shortened, and the parasitic capacitance and parasitic resistance components can be further reduced.

[0127] 17 shows an igniter and an internal combustion engine ignition system according to a third embodiment of the present disclosure. The internal combustion engine ignition system B3 of this embodiment includes an igniter A3, a control device 81, a battery 82, an ignition coil 83, an ignition plug 84, the igniter A3, and a first diode 3.

[0128] The semiconductor module C3 of this embodiment has a configuration similar to that of the semiconductor module C1 described above, except that the first diode 3 is removed. In this embodiment, the first diode 3 may be mounted on the same circuit board as the igniter A3, the control circuit 2, and the like.

[0129] This embodiment can more appropriately protect the switching element 1 from surge voltages. As can be understood from this embodiment, the first diode 3 is not limited to a package configuration in which it is covered by the sealing resin 6 together with the switching element 1, and may be provided outside the package having the switching element 1.

[0130] The igniter and internal combustion engine ignition system according to the present disclosure are not limited to the above-described embodiment. The specific configurations of the components of the igniter and internal combustion engine ignition system according to the present disclosure can be freely designed in various ways.

[0131] [Appendix 1] a switching element (1) having a first electrode (11), a second electrode (12), and a third electrode (13) for controlling the conduction state of the first electrode (11) and the second electrode (12); a control circuit (2), The igniter (A1) further comprises a first diode (3) electrically connected between the first electrode (11) and the second electrode (12). [Appendix 2] The igniter (A1) according to Appendix 1, wherein the first diode (3) is a Zener diode. [Appendix 3] The igniter (A1) according to Appendix 2, wherein the first diode (3) is a TVS diode. [Appendix 3-1] 4. The igniter according to claim 3, wherein the withstand voltage of the first diode (3) is lower than the withstand voltage of the switching element (1). [Appendix 3-2] The igniter according to Appendix 3-1, wherein the withstand voltage of the first diode (3) is 0.7 to 0.9 times the withstand voltage of the switching element (1). [Appendix 4] The switching element (1) includes an IGBT (1A), The first electrode (11) is a collector electrode, The second electrode (12) is an emitter electrode, 4. The igniter (A1) according to any one of appendices 1 to 3, wherein the third electrode (13) is a gate electrode. [Appendix 5] The igniter (A1) described in Appendix 4, wherein the switching element (1) has a second diode (14) electrically connected between the second electrode (12) and the third electrode (13). [Appendix 6] 6. The igniter (A1) according to claim 5, wherein the second diode (14) includes a plurality of n-type regions (14n) and a plurality of p-type regions (14p) electrically connected in series and alternately. [Appendix 7] The igniter (A1) described in Appendix 5 or 6, wherein the switching element (1) has a third diode (15) electrically connected between the first electrode (11) and the third electrode (13). [Appendix 8] 8. The igniter (A1) according to claim 7, wherein the third diode (15) includes a plurality of n-type regions (15n) and a plurality of p-type regions (15p) electrically connected in series and alternately. [Appendix 9] An igniter (A1) according to any one of Appendices 1 to 8, comprising a semiconductor module (C1) having the switching element (1), the first diode (3), and a sealing resin (6) covering the switching element (1) and the first diode (3). [Appendix 10] An igniter (A2) according to any one of Appendices 1 to 8, comprising a semiconductor module (C2) having the switching element (1), the control circuit (2), and the first diode (3), and a sealing resin (6) covering the switching element (1), the control circuit (2), and the first diode (3). [Appendix 11] The semiconductor module (C1) has a first lead (41) including a pad portion (415), The igniter (A1) according to appendix 9 or 10, wherein the switching element (1) and the first diode (3) are conductively connected to the pad portion (415). [Appendix 12] The igniter (A1) described in Appendix 11, wherein the semiconductor module (C1) has a first conductive bonding material (91) that electrically connects the switching element (1) and the pad portion (415), and a second conductive bonding material (92) that electrically connects the first diode (3) and the pad portion (415). [Appendix 13] 13. The igniter (A1) according to claim 12, wherein the first conductive bonding material (91) and the second conductive bonding material (92) are connected to each other. [Appendix 14] The pad portion (415) has a first main surface (411) to which the switching element (1) and the first diode (3) are conductively joined, and a groove portion (4151) recessed from the first main surface (411), The groove portion (4151) is annular in plan view, The igniter (A2) according to appendix 13, wherein the switching element (1) and the first conductive bonding material (91) are located in a region surrounded by the groove portion (4151). [Appendix 15] the first diode (3) and the second conductive bonding material (92) are located in an area surrounded by the groove portion (4151); The igniter (A21) according to Appendix 14, wherein the first conductive bonding material (91) and the second conductive bonding material (92) are connected to each other. [Appendix 16] An igniter (A1) according to any one of Supplementary Notes 1 to 15; a control device (81) connected to the control circuit (2); a battery (82); an ignition coil (83) connected to the battery (82) and the switching element (1); a spark plug (84) connected to the battery (82) via the ignition coil (83); An internal combustion engine ignition system (B1) comprising: [Explanation of symbols]

[0132] A1, A2, A21, A3: Igniter B1, B2, B3: Internal combustion engine ignition system C1, C2, C21: Semiconductor modules 1: Switching element 1a: Element main surface 1b: Back side of element 2: Control circuit 3: First diode 5A: Main part 6: Sealing resin 10: Main body 11: 1st electrode 12:Second electrode 13:Third electrode 14: Second diode 14n:n type region 14p: p-type region 15: Third diode 15n:n type region 15p: p-type region 16: Gate Finger 17:EQR electrode 21: Drive unit 22: Ignition confirmation section 31: 4th electrode 32: 5th electrode 41: First lead 42: Second lead 43: Third lead 44: 4th lead 45: 5th lead 46: Emitter area 46A, 46B: 6th lead 48: 8th lead 49: 9th lead 50: Gate electrode 51, 52, 53, 54, 55: connecting members 61: Resin main surface 62: Resin back 63: Resin side 81: Control device 82: Battery 83: Ignition coil 84: Spark plug 91: First conductive adhesive material 92: Second conductive adhesive material 101: Semiconductor substrate 102: Buffer layer 103: Epitaxial layer 121: Pad section 131: Pad section 140: First diode forming body 150: Second diode forming body 181: Passivation film 182: Gate insulating film 183: Interlayer insulating film 184: Field insulating film 189: First main surface insulating film 191: Channel stopper area 192: p-type well region 411: First main surface 412: First back side 415: Pad section 416: Extension part 417 :Protrusion 418 :Connection part 425: Connection 426:Terminal section 435: Connection 436:Terminal section 510, 520, 530: Loop section 511, 512, 521, 522, 531, 532: Bonding section 1001: Active area 1002: Outer area 1031: Drift region 1811: First pad opening 1812: Second pad opening 4151: Groove 4161: Base 4162: Bend 4163:Tip 4181:Through hole 4261: Base 4262: Bend 4263 :Tip 4361: Base 4362: Bend 4363 :Tip MC1, MC2: Capacitor R: Gate resistor circuit R1: First gate resistor R2: Second gate resistor R3:Resistance

Claims

1. a switching element having a first electrode, a second electrode, and a third electrode for controlling a conduction state of the first electrode and the second electrode; a control circuit; The igniter further comprises a first diode electrically connected between the first electrode and the second electrode.

2. 2. The igniter of claim 1, wherein said first diode is a Zener diode.

3. 3. The igniter of claim 2, wherein said first diode is a TVS diode.

4. 4. The igniter according to claim 3, wherein a withstand voltage of said first diode is lower than a withstand voltage of said switching element.

5. 5. The igniter according to claim 4, wherein the withstand voltage of the first diode is 0.7 to 0.9 times the withstand voltage of the switching element.

6. the switching element includes an IGBT, the first electrode is a collector electrode, the second electrode is an emitter electrode, The igniter of claim 1 , wherein the third electrode is a gate electrode.

7. 7. The igniter of claim 6, wherein the switching element comprises a second diode electrically connected between the second electrode and the third electrode.

8. 8. The igniter of claim 7, wherein the second diode includes a plurality of n-type regions and a plurality of p-type regions electrically connected in series and alternating fashion.

9. 8. The igniter of claim 7, wherein the switching element comprises a third diode electrically connected between the first electrode and the third electrode.

10. 10. The igniter of claim 9, wherein the third diode includes a plurality of n-type regions and a plurality of p-type regions electrically connected in series and alternating fashion.

11. 11. The igniter according to claim 1, further comprising a semiconductor module having the switching element, the first diode, and a sealing resin covering the switching element and the first diode.

12. 11. The igniter according to claim 1, further comprising a semiconductor module including the switching element, the control circuit, the first diode, and a sealing resin covering the switching element, the control circuit, and the first diode.

13. the semiconductor module has a first lead including a pad portion; The igniter according to claim 11 , wherein the switching element and the first diode are conductively connected to the pad portion.

14. 14. The igniter according to claim 13, wherein the semiconductor module has a first conductive bonding material that conductively bonds the switching element and the pad portion, and a second conductive bonding material that conductively bonds the first diode and the pad portion.

15. The igniter of claim 14 , wherein the first conductive bonding material and the second conductive bonding material are connected to each other.

16. the pad portion has a first main surface to which the switching element and the first diode are conductively joined, and a groove portion recessed from the first main surface, The groove portion is annular in plan view, The igniter according to claim 15 , wherein the switching element and the first conductive bonding material are located in a region surrounded by the groove.

17. the first diode and the second conductive bonding material are located in a region surrounded by the groove, 17. The igniter of claim 16, wherein the first conductive bonding material and the second conductive bonding material are connected to each other.

18. The igniter of claim 1; a control device connected to the control circuit; A battery, an ignition coil connected to the battery and the switching element; a spark plug connected to the battery via the ignition coil; An internal combustion engine ignition system comprising:

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