High heat loss heater and electrostatic chuck for semiconductor processing

Abstract

To provide a substrate processing method and a substrate support assembly which can be used to manufacture a high quality device and structure.SOLUTION: An substrate support assembly 400 includes: an electrostatic chuck body 425 defining a substrate support surface 427 that defines a substrate seat part and includes a dielectric coating; a support stem 405 coupled with the electrostatic chuck body; and a cooling hub 440 positioned below a base of the support stem and coupled with a cooling fluid source. The electrostatic chuck body defines at least one cooling channel 440 that is in communication with the cooling fluid source. The substrate support assembly further includes: a heater 435 embedded within the electrostatic chuck body; an AC power rod extending through the support stem and electrically connected with the heater; and a plurality of voids 450a, 450b formed within the electrostatic chuck body between the at least one cooling channel and the heater.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 17 / 079,155, filed October 23, 2020, entitled "HIGH HEAT LOSS HEATER AND ELECTROSTATIC CHUCK FOR SEMICONDUCTOR PROCESSING," the entire text of which is incorporated herein by reference.

[0002] Technical Field

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. More particularly, the present technology relates to substrate support assemblies and other semiconductor processing equipment. [Background technology]

[0003]

[0003] Integrated circuits are realized through processes that create intricately patterned layers of material on a substrate surface. Fabricating patterned materials on a substrate requires controlled methods for forming and removing material. The temperatures at which these processes occur can directly affect the final product. The temperature of the substrate is often controlled and maintained by an assembly that supports the substrate during processing. Internally located heating devices generate heat within the support, which may be conductively transferred to the substrate. The substrate support may also be utilized in some techniques to generate a substrate-level plasma and electrostatically chuck the substrate to the support. Plasma generated near the substrate can cause component impingement and the formation of a parasitic plasma in undesirable areas of the chamber. This condition can also lead to discharges between the substrate support electrodes. Furthermore, utilizing a pedestal for both heat generation and plasma generation can result in interference effects.

[0004]

[0004] Because various operating processes may utilize elevated temperatures, as well as plasma formation at the substrate level, the construction materials of the substrate support may be exposed to temperatures that affect the electrical operation of the assembly. Therefore, there is a need for improved systems and methods that can be used to manufacture high quality devices and structures. The above needs and others are addressed by the present technology. Summary of the Invention

[0005] An exemplary substrate support assembly may include an electrostatic chuck body defining a support surface that defines a substrate seat. The substrate support surface may include a dielectric coating. The substrate support assembly may include a support stem coupled to the electrostatic chuck body. The substrate support assembly may include a cooling hub positioned below a base of the support stem and coupled to a cooling fluid source. The electrostatic chuck body may define at least one cooling channel in communication with the cooling fluid source. The substrate support assembly may include a heater embedded within the electrostatic chuck body. The substrate support assembly may include an AC power rod extending through the support stem and electrically coupled to the heater. The substrate support assembly may include a plurality of voids formed in the electrostatic chuck body between the at least one cooling channel and the heater.

[0006] In some embodiments, the substrate support assembly may include an RF rod extending through the support stem and electrically coupled to the electrostatic chuck body. A dielectric coating may cover the entire outer surface of the electrostatic chuck body. The substrate support assembly may include an insulator disposed between the electrostatic chuck body and the support stem. The electrostatic chuck body and the support stem may be formed as a monolithic structure. The substrate support assembly may include an insulator disposed between the support stem and a cooling hub. An upper end of the support stem may include a support bowl spaced from a bottom surface of the electrostatic chuck body. At least one insulator may be supported on the support bowl and disposed between the support bowl and the electrostatic chuck body. The at least one insulator may include an inner polymeric insulator and an outer ceramic insulator. The substrate support assembly may include an insulating edge ring seated on a recessed ledge of the electrostatic chuck body. The insulating edge ring may extend radially outward along an outer edge of the electrostatic chuck body.

[0007] Some embodiments of the present technology may also include a substrate support assembly including an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The electrostatic chuck body may include a cooling plate. The electrostatic chuck body may include a support plate positioned on the cooling plate. The electrostatic chuck body may include a bonding layer disposed between the cooling plate and the support plate. The substrate support assembly may include a support stem coupled to the electrostatic chuck body. The substrate support assembly may include an AC heating wire electrically coupled to the support plate.

[0008] In some embodiments, the substrate support assembly may include a first bipolar electrode embedded in the support plate. The substrate support assembly may include a second bipolar electrode embedded in the support plate. The minimum diameter of the support stem may be at least or about 10 cm. The cooling plate may define at least one cooling channel in communication with a cooling fluid source. The at least one cooling channel may form a circuit-like pattern in the cooling plate. The difference between the thermal expansion coefficient of the support plate and the thermal expansion coefficient of the cooling plate may be about 10% or less. The support stem may include an upper portion and a lower portion. The thermal expansion coefficient of the upper portion may be less than the thermal expansion coefficient of the lower portion. The substrate support assembly may include a bonding layer disposed between the cooling plate and the support stem.

[0009] Some embodiments of the present technique may also include a method of processing a substrate, including heating a top surface of a substrate support assembly. The method may include flowing a precursor into a processing chamber. The processing chamber may include a substrate support assembly on which a substrate is disposed. The substrate support assembly may include an electrostatic chuck body. The substrate support assembly may include a support stem coupled to the electrostatic chuck body. The substrate support assembly may include an AC heating wire electrically coupled to a conductive material in the electrostatic chuck body. The method may include generating a plasma of the precursor in a processing region of the processing chamber. The method may include cooling a bottom portion of the substrate support assembly while heating the top surface. The method may include depositing a material on the substrate. In some embodiments, cooling the bottom portion of the substrate support assembly may include flowing a fluid through one or more cooling channels formed in a portion of the electrostatic chuck body. The method may include clamping a semiconductor substrate to a support surface of a substrate platform using a chucking voltage.

[0010] Such technology may provide numerous advantages over conventional systems and techniques. For example, embodiments of the present technology may provide a substrate support that can provide both heating and chucking functions while reducing the thermal shift experienced on the wafer. These and other embodiments, along with their many advantages and features, are described in more detail below and in the accompanying drawings.

[0011] A further understanding of the nature and advantages of the disclosed technology may be obtained by reference to the remainder of this specification and the drawings. [Brief explanation of the drawings]

[0012] [Figure 1] 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2]

[0013] 1 shows a schematic cross-sectional view of an exemplary plasma system in accordance with some embodiments of the techniques of the present technology; [Figure 3]

[0014] 1 shows a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 4]

[0015] 1 shows a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 5]

[0016] 1 shows a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 6]

[0017] 1 shows a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 7]

[0018] 1 shows a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 8]

[0019] 1 shows a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 9]

[0020] 1 illustrates exemplary operations in a processing method according to some embodiments of the present technology. DETAILED DESCRIPTION OF THE INVENTION

[0013]

[0021] Some figures are included as schematics. It is understood that the figures are for illustrative purposes and should not be considered to scale unless expressly stated to be to scale. Furthermore, as schematics, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic depictions and may include exaggerated material for illustrative purposes.

[0014]

[0022] In the accompanying drawings, similar components and / or features may have the same reference numerals. Furthermore, various components of the same type may be distinguished according to the reference numeral, with a letter distinguishing between the similar components. When only a first reference numeral is used herein, the description is applicable to any one of the similar components having the same first reference numeral, regardless of the letter.

[0015]

[0023] Plasma-enhanced deposition processes can energize one or more constituent precursors to promote film formation on a substrate. These processes are often carried out using a pedestal containing a heater that can heat and control the substrate temperature to the desired process temperature. Because the plasma is generated by an exothermic reaction, a significant amount of heat can be generated. While many operations can be performed at temperatures high enough to overcome the effects of the heat from the plasma, the heat from the plasma can affect the process when operations are performed at intermediate temperatures, such as between about 100°C and about 500°C. This heat, along with the heat from ion bombardment during plasma formation, can exceed the amount of heat that can be dissipated by a conventional pedestal to maintain the set temperature. As a result, excess heat can accumulate, causing thermal shifts and increasing wafer temperature over time. This temperature increase can lead to non-uniformity of the film on the wafer.

[0016]

[0024] The present technology may incorporate a substrate support assembly that can better control temperature drift during processing operations to better ensure stable and repeatable temperatures with each deposition cycle. For example, a substrate support assembly according to some embodiments of the present technology may overcome temperature gradients due to excessive heat generation by incorporating active and / or passive cooling features in the pedestal that help dissipate excess heat while allowing the pedestal to be actively heated and maintained at a desired temperature by a pedestal heater.

[0017]

[0025] While the remainder of the disclosure routinely identifies particular deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition, etch, and cleaning chambers and processes that may occur in the described chambers. Thus, the present technology should not be considered limited to use with these specific deposition processes or chambers alone. This disclosure describes one possible system and chamber that may include a pedestal according to embodiments of the present technology, before describing additional modifications and adjustments to this system according to embodiments of the present technology.

[0018]

[0026] 1 illustrates a top view of one embodiment of a processing system 100 with deposition, etch, bake, and cure chambers, according to an embodiment. In the figure, a pair of front-opening unified pods 102 deliver substrates of various sizes that are received by a robotic arm 104 and placed in a low-pressure holding area 106 before being placed in one of the substrate processing chambers 108a-108f positioned in tandem sections 109a-109c. A second robotic arm 110 may be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-108f. Each substrate processing chamber 108a-f may be equipped to perform many substrate processing operations, including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and the formation of stacks of semiconductor materials as described herein, in addition to other substrate processes including annealing, ashing, and the like.

[0019]

[0027] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-d and 108e-f) may be used to deposit a dielectric material on a substrate, and a third pair of processing chambers (e.g., 108a-b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-108f, may be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes may be performed in chambers separate from the fabrication system shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by system 100.

[0020]

[0028] 2 shows a schematic cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 may illustrate a pair of processing chambers 108, which may be equipped in one or more of the tandem sections 109 described above and may include a substrate support assembly in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include identical components.

[0021]

[0029] For example, processing region 220B (components of which may also be included in processing region 220A) may include a pedestal 228 disposed within the processing region through a passage 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 may include a heating element 232, e.g., a resistive heating element, that may heat and control the substrate temperature at a desired processing temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0022]

[0030] The body of the pedestal 228 may be coupled to the stem 226 by a flange 233. The stem 226 may electrically couple the pedestal 228 to a power output or power box 203. The power box 203 may include a driver system that controls the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 may also include a power interface for supplying power to the pedestal 228. The power box 203 may also include an interface for a power meter and a thermometer, such as a thermocouple interface. The stem 226 also includes a base assembly 238 adapted to removably couple to the power box 203. A circumferential ring 235 is shown above the power box 203. In some embodiments, the circumferential ring 235 may be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0023]

[0031] A rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing region 220B. The rod 230 may be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively position the substrate 229 at a distance from the pedestal to facilitate exchange of the substrate 229 by a robot utilized to transfer substrates into and out of the processing region 220B through the substrate transfer port 260.

[0024]

[0032] The chamber lid 204 may be coupled to the top of the chamber body 202. The lid 204 may house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 may include a precursor inlet passage 240 that may deliver reactant and cleaning precursors into the processing region 220B through a dual channel showerhead 218. The dual channel showerhead 218 may include an annular base plate 248 having a shield plate 244 disposed intermediate a faceplate 246. A radio frequency (“RF”) source 265 may be coupled to the dual channel showerhead 218. The RF source 265 may power the dual channel showerhead 218 to facilitate plasma generation between the faceplate 246 and the pedestal 228 of the dual channel showerhead 218. In some embodiments, the RF source may be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 may be disposed between the lid 204 and the dual channel showerhead 218 to prevent conduction of RF power to the lid 204. A shadow ring 206 may be disposed on the outer edge of the pedestal 228, and the shadow ring 206 engages with the pedestal 228.

[0025]

[0033] Optional cooling channels 247 may be formed in the annular base plate 248 of the gas distribution system 208 to cool the annular base plate 248 during operation. A heat transfer fluid, such as water, ethylene glycol, gas, or the like, may be circulated through the cooling channels 247 so that the base plate 248 may be maintained at a predetermined temperature. A liner assembly 227 may be positioned in the processing region 220B in close proximity to the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment in the processing region 220B. The liner assembly 227 may include a circumferential pumping cavity 225 that may be coupled to a pumping system 264 configured to exhaust gases and byproducts from the processing region 220B and to control the pressure within the processing region 220B. A plurality of exhaust ports 231 may be formed in the liner assembly 227. The exhaust outlet 231 can be configured to allow gas flow from the processing region 220B to the circumferential pumping cavity 225 to facilitate processing within the system 200.

[0026]

[0034] FIG. 3 illustrates a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 300 in accordance with some embodiments of the present technique. FIG. 3 may include one or more components discussed above in connection with FIG. 2 and may provide additional details regarding the chamber. Chamber 300 may be used to perform semiconductor processing operations, including the deposition of stacks of dielectric materials described above. Chamber 300 may illustrate a partial view of a processing region of a semiconductor processing system and may not include all of the components, such as the additional lid stack components described above, that are understood to be incorporated in certain embodiments of chamber 300.

[0027]

[0035] Thus, FIG. 3 may depict a portion of a processing chamber 300. The chamber 300 may include a substrate support assembly 310 along with a showerhead 305. The showerhead 305 and the substrate support 310, along with a chamber sidewall 315, may define a substrate processing region 320 within which a plasma may be generated. The substrate support assembly may include an electrostatic chuck body 325. The electrostatic chuck body 325 may include one or more components embedded or disposed within the body. Components embedded within the upper puck may not be exposed to processing materials in some embodiments and may be retained entirely within the chuck body 325. The electrostatic chuck body 325 may define a substrate support surface 327 and may be characterized by a thickness and length or diameter depending on the particular shape of the chuck body. In some embodiments, the chuck body may be elliptical and may be characterized by one or more radial dimensions from a central axis passing through the chuck body. It should be understood that the upper puck may be of any shape and, when discussing radial dimensions, may define any length from the center location of the chuck body.

[0028]

[0036] The electrostatic chuck body 325 may be coupled to a stem 330. The stem 330 may support the chuck body and may include channels for transmitting and receiving electrical and / or fluid lines that may be coupled to internal components of the chuck body 325. While the chuck body 325 may include associated channels or components for operating as an electrostatic chuck, in some embodiments, the assembly may operate as or include components for a vacuum chuck or any other type of chuck system. The stem 330 may be coupled to the chuck body on a second surface of the chuck body opposite the substrate support surface. In some embodiments, the electrostatic chuck body 325 may be formed from an electrically conductive material (such as a metal like aluminum or other material that may be thermally and / or electrically conductive) and may be coupled through a filter to a power source (such as a DC power source, a pulsed DC power source, an RF bias power source, a pulsed RF power source or bias power source, or a combination of these or other power sources), which may be an impedance matching circuit to enable the electrostatic chuck body 325 to operate as an electrode. In other embodiments, the top of the electrostatic chuck body 325 may be formed from a dielectric material. In such embodiments, the electrostatic chuck body 325 may include a separate electrode. For example, the electrostatic chuck body 325 may include a first bipolar electrode 335a, which may be embedded within the chuck body proximate the substrate support surface. The electrode 335a may be electrically coupled to a DC power source 340a. The power source 340a may be configured to provide energy or voltage to the conductive chuck electrode 335a. This may be operated to form a plasma of a precursor in the processing region 320 of the semiconductor processing chamber 300, although other plasma operations may be sustained as well. For example, the electrode 335a may be a chuck mesh that acts as an electrical ground for a capacitive plasma system that includes an RF source 307 electrically coupled to the showerhead 305. For example, the electrode 335a may act as a ground path for RF power from the RF source 307 and simultaneously act as an electrical bias to the substrate to provide electrostatic clamping of the substrate to the substrate support surface.The power supply 340a may include a filter, a power supply, and several other electrical components configured to provide a chucking voltage.

[0029]

[0037] The electrostatic chuck body may include a second bipolar electrode 335b, which may also be embedded within the chuck body proximate the substrate support surface. The electrode 335b may be electrically coupled to a DC power supply 340b. The power supply 340b may be configured to provide energy or voltage to the conductive chuck electrode 335b. Further details regarding electrical components and bipolar chucks according to certain embodiments are described further below, any of which designs may be implemented in the processing chamber 300. For example, additional plasma-related power sources or components may be incorporated.

[0030]

[0038] During operation, a substrate may at least partially contact the substrate support surface of the electrostatic chuck body, creating a contact gap that essentially creates a capacitive effect between the surface of the pedestal and the substrate. A voltage can be applied to the contact gap to generate an electrostatic force for the chuck. Power supplies 340a and 340b can provide electrical charge. The charge can migrate and accumulate from the electrodes to the substrate support surface, creating a charge layer with Coulombic attraction with the opposite charge on the substrate and electrostatically holding the substrate against the substrate support surface of the chuck body. This charge transfer can occur due to current flow through the dielectric material of the chuck body, based on the finite resistance in the dielectric for Johnsen-Rahbek type chucks that may be used in some embodiments of the present technology.

[0031]

[0039] The chuck body 325 may also define a recessed region 345 in the substrate support surface, which may provide a recessed pocket in which a substrate may be placed. The recessed region 345 may be formed in an interior region of the upper puck and may be configured to receive a substrate for processing. The recessed region 345 encompasses a central region of the electrostatic chuck body as shown and may be sized to accommodate any variety of substrate sizes. The substrate may seat within the recessed region and may be contained by an outer region 347 that may contain the substrate. In some embodiments, the height of the outer region 347 may be recessed such that the substrate is level with or below the surface height of the substrate support surface at the outer region 347. The concave surface may control edge effects during processing and, in some embodiments, improve deposition uniformity across the substrate. In some embodiments, an edge ring may be disposed around the periphery of the upper puck to at least partially define a recess in which the substrate may seat. In some embodiments, the surface of the chuck body may be substantially flat, and the edge ring may completely define the recess in which the substrate may seat.

[0032]

[0040] In some embodiments, the electrostatic chuck body 325 and / or stem 330 may be made of an insulating or dielectric material. For example, oxides, nitrides, carbides, and other materials may be used to form the components. Exemplary materials may include ceramics including aluminum oxide, aluminum nitride, silicon carbide, tungsten carbide, and oxides, nitrides, carbides, borides, or titanates of other metals or transition metals, as well as combinations of these materials with other insulating or dielectric materials. Different grades of ceramic materials may be used to provide a composite material configured to operate over a specific temperature range; therefore, in some embodiments, different ceramic grades of the same material may be used for the upper puck and stem. In some embodiments, dopants may be incorporated to tailor electrical properties. Exemplary dopant materials may include yttrium, magnesium, silicon, iron, calcium, chromium, sodium, nickel, copper, zinc, or any number of other elements known to be incorporated into ceramic or dielectric materials.

[0033]

[0041] The electrostatic chuck body 325 may also include an embedded heater 350 contained within the chuck body. The heater 350 may, in embodiments, include a resistive heater or a fluid heater. In some embodiments, the electrode 335 can operate as a heater, but decoupling these operations may allow for more individual control and provide extended heater coverage while limiting the area for plasma formation. The heater 350 may include a polymer heater bonded or coupled to the chuck body material, but a conductive element may also be embedded within the electrostatic chuck body and configured to receive an electric current, such as an AC current, to heat the upper puck. The electric current may be supplied through the stem 330 through a channel similar to the DC power described above. The heater 350 may be coupled to a power source 365, which may provide an electric current to the resistive heating element to facilitate heating of the associated chuck body and / or substrate. The heater 350 may, in embodiments, include multiple heaters, each associated with a zone of the chuck body, such that an exemplary chuck body may include as many or more zones as there are heaters. If present, a chuck mesh electrode 335 may, in some embodiments, be positioned between the heater 350 and the substrate support surface 327, and, as described further below, in some embodiments, may maintain a distance between the electrode in the chuck body and the substrate support surface.

[0034]

[0042] The heater 350 may be capable of regulating the temperature of the entire electrostatic chuck body 325 as well as the substrate residing on the substrate support surface 327. The heater may have an operating temperature range to heat the chuck body and / or substrate to about 100° C. or greater, and the heater may be configured to heat to temperatures of about 125° C. or greater, about 150° C. or greater, about 175° C. or greater, about 200° C. or greater, about 250° C. or greater, about 300° C. or greater, about 350° C. or greater, about 400° C. or greater, about 450° C. or greater, about 500° C. or greater, about 550° C. or greater, about 600° C. or greater, about 650° C. or greater, about 700° C. or greater, about 750° C. or greater, about 800° C. or greater, about 850° C. or greater, about 900° C. or greater, about 950° C. or greater, about 1000° C. or greater, or greater. The heater may be configured to operate in any range encompassed between any two of these recited values, or in smaller ranges encompassed within any of these ranges, and below any of the recited temperatures. In some embodiments, the chamber 300 may include a purge gas source, such as a purge gas source fluidly connected to the bottom of the chamber body 315. The purge gas source may supply purge gas to the chamber 300 to remove any films deposited on various components of the chamber 300, such as the support assembly 310.

[0035]

[0043] FIG. 4 shows a schematic partial cross-sectional view of a substrate support assembly 400 in accordance with some embodiments of the present technique. As described above, the present technique can be used in some embodiments to perform film deposition and curing in a single chamber. The substrate support assembly 400 can be similar to the substrate support assembly 310 and can include any of the features, components, or characteristics of the support described above, including associated components or power sources. The substrate support assembly 400 can include a support stem 405, which can be a conductive material. An electrostatic chuck body 425, which can include one or more components embedded or disposed within the body, can be positioned above the support stem 405. Components embedded within the top puck may not be exposed to process materials in some embodiments and may be retained entirely within the chuck body 425. The electrostatic chuck body 425 can define a substrate support surface 427 and can be characterized by a thickness and length or diameter depending on the particular shape of the chuck body. In some embodiments, the chuck body 425 may be elliptical and may be characterized by one or more radial dimensions from a central axis through the chuck body. It should be understood that the upper puck may be any shape and may define any length from a central location of the chuck body 425 when radial dimensions are discussed. Disposed between the electrostatic chuck body 425 and the support stem 405 may be an insulator 455. The insulator 455 may be formed from an insulating material such as, but not limited to, polyetheretherketone (PEEK) or other insulating material that can withstand high temperatures without deforming or cracking.

[0036]

[0044] In some embodiments, the electrostatic chuck body 425 may be formed from a conductive material such as aluminum or other metal. Part or all of the electrostatic chuck body 425 may be coated with a dielectric material 430, such as a ceramic material or other dielectric material such as aluminum oxide, or any other oxide, nitride, carbide, or combination material that can limit shorting from the substrate support assembly. This dielectric coating can protect the conductive material during the plasma formation process and allow the electrostatic chuck body 425, which may be conductive, to operate as an electrostatic chuck without the need for a separate chuck electrode. The dielectric material, in some embodiments, may be provided at a thickness of about 1 mm or less, and may be maintained at a thickness of about 800 μm or less, about 600 μm or less, about 500 μm or less, about 400 μm or less, about 300 μm or less, about 200 μm or less, or less, although a thickness of about 100 μm or more or about 200 μm or more may be maintained to ensure complete coverage of the puck surface to limit or prevent shorting. In some embodiments, the dielectric material 430 may be provided only on the substrate support surface 427, while in other embodiments, the dielectric material 430 may be provided on other surfaces of the electrostatic chuck body 425. For example, a coating of the dielectric material 430 may be provided on the entire top surface of the electrostatic chuck body 425, the sides of the electrostatic chuck body 425, the bottom surface of the electrostatic chuck body 425, and / or the entire exterior surface of the electrostatic chuck body 425.

[0037]

[0045] The electrostatic chuck body 425 may include a heater 435, such as an AC heating coil. In some embodiments, the heater 435 may be formed from conductive wire, such as wire formed from nickel chromium. An insulating shell 436 may be provided around the heater 435 to prevent shorting. The heater 435 may be formed from one or more heating elements. By way of example only, a conductive wire may be provided in a spiral or other circuit extending radially within the electrostatic chuck body 425 to provide relatively uniform heating across the substrate support surface 427. Each heating element of the heater 435 may be coupled to a power source, such as an AC power source, that delivers AC current to the heater 435 to heat the upper puck. The current may be delivered to the heater 435 through one or more rods or wires 437 disposed within channels formed in the stem 405 and the electrostatic chuck body 425. In some embodiments, a temperature sensor 439 may extend along the rods or wires 437. The heater 435 may have an operating temperature range that heats the chuck body 425 and / or substrate to about 100° C. or greater, and the heater 435 may be configured to heat to about 125° C. or greater, about 150° C. or greater, about 175° C. or greater, about 200° C. or greater, about 250° C. or greater, about 300° C. or greater, or greater. The heater 435 may also be configured to operate in any range encompassed between any two of these recited values, or in a smaller range encompassed within any of these ranges.

[0038]

[0046] The lower portion of the electrostatic chuck body 425 may define one or more cooling channels 440. For example, each cooling channel 440 may be formed in the base of the electrostatic chuck body 425. In some embodiments, the upper end of each cooling channel 440 may form a ring or other circuit pattern around the interior of the electrostatic chuck body 425 and may be connected to a cooling fluid source through inlet and outlet channels through the support stem 405. A cooling fluid, such as water or Galden, circulates through each cooling channel 440 to cool the lower portion of the electrostatic chuck body 425 and help dissipate excess heat generated during the plasma formation process. This may reduce or eliminate thermal shifts, resulting in more uniform film deposition on the substrate. The cooling fluid may be circulated at temperatures of about 125°C or less, about 120°C or less, about 115°C or less, about 110°C or less, about 105°C or less, about 100°C or less, about 95°C or less, about 90°C or less, about 85°C or less, about 80°C or less, about 75°C or less, about 70°C or less, about 65°C or less, about 60°C or less, about 55°C or less, or about 50°C or less, or less. In some embodiments, O-rings 475 may be provided around the inlet and / or outlet channels to aid in sealing the cooling channels 440 at the connections between different components. For example, O-rings 475 may be disposed around the inlet and / or outlet channels between the electrostatic chuck body 425 and the insulator 455, between the insulator 455 and the support stem 405, and / or between the support stem 405 and the cooling hub 445.

[0039]

[0047] The electrostatic chuck body 425 may define several voids 450 therein. The voids 450 may act as thermal chokes within the electrostatic chuck body 425 to help distribute heat throughout the electrostatic chuck body 425. For example, voids 450 may be formed within the electrostatic chuck body 425 between the heater 435 and the top ends of the cooling channels 440. In some embodiments, one or more of the voids 450 may be positioned directly above the cooling channels 440. The voids 450 may have any shape. For example, the central void 450a may have a circular or elliptical shape, and the outer void 450b may have an annular shape. In some embodiments, the central void 450a and the outer void 450b may be concentric with one another. The voids 450 may be the same depth, and / or some or all of the voids 450 may be at different depths within the electrostatic chuck body 425. Some voids 450 may have a different cross-sectional shape and / or area than other voids 450. It will be appreciated that various numbers, sizes, and / or shapes of voids may be provided within the electrostatic chuck body 425 to meet the thermal distribution needs of a particular substrate support assembly 400.

[0040]

[0048] Extending through the electrostatic chuck body 425 may be an RF rod 460, which may be coupled to an RF matcher of a low frequency power supply 470 to provide chucking current. The RF rod 460 may have a rod insulator 465 extending around the RF rod 460, which may extend with the RF rod through each of the cooling hub 445, the support stem 405, the insulator 455, and the electrostatic chuck body 425. The rod insulator 465 extending along the length of the RF rod 460 and into the hub may prevent an RF leakage path at the hub to the pedestal shaft. The rod insulator 465 may also shield the RF rod 460 from current from the AC power source. In some embodiments, in addition to or instead of the rod insulator 464, the RF rod 460 may be positioned a minimum distance away from the AC rod or wire 437, such as at least or about 2 mm, at least or about 3 mm, at least or about 4 mm, at least or about 5 mm, or more. At the opposite end of the RF rod 460, the RF rod may be coupled to an electrostatic chuck body 425, which may act as a plasma electrode. In embodiments in which a dielectric coating extends along the puck, the electrostatic chuck body 425 may also act as a chucking electrode.

[0041]

[0049] FIG. 5 shows a schematic partial cross-sectional view of an exemplary substrate support assembly 500 in accordance with some embodiments of the present technique. The substrate support assembly 500 may be similar to the substrate support assemblies 310 and / or 400 and may include any of the features, components, or characteristics of the supports described above, including associated components or power supplies. The substrate support assembly 500 may include a support stem 505 and an electrostatic chuck body 525, which may be formed as a monolithic structure. For example, the support stem 505 and the electrostatic chuck body 525 may be formed as a single body, which may be formed of a conductive material such as aluminum. The monolithic support stem 505 and the electrostatic chuck body 525 may include one or more components embedded or disposed within the body. The electrostatic chuck body 525 may define a substrate support surface 527. Some or all of the monolithic support stem 505 and the electrostatic chuck body 525 may be coated with a dielectric material 530. In some embodiments, the dielectric material 530 may be provided only on the substrate support surface 527, while in other embodiments, the dielectric material 530 may be provided on other surfaces of the support stem 505 and / or the electrostatic chuck body 525. For example, a coating of the dielectric material 530 may be provided on the entire top surface of the electrostatic chuck body 525, the sides of the support stem 505 and / or the electrostatic chuck body 525, the bottom surface of the support stem 505 and / or the electrostatic chuck body 525, and / or the entire outer surface of the support stem 505 and / or the electrostatic chuck body 525. In some embodiments, the dielectric material 530 may be a plasma spray coating and / or an anodized layer. In certain embodiments, the top surface and outermost side edges of the electrostatic chuck body 525 may include a plasma spray coating of the dielectric material, while the inner sides and / or bottom surfaces of the electrostatic chuck body 525 and / or the support stem 505 may include an anodized layer of the dielectric material 530. In some embodiments, a single surface of the electrostatic chuck body 525 and / or support stem 505 may include both a plasma spray coating and an anodized layer of dielectric material. The dielectric material 530 may be the same or different materials across different surfaces of the electrostatic chuck body 525 and / or support stem 505.The thickness of the dielectric material 530 may vary or may be constant across one or more surfaces of the electrostatic chuck body 525 and / or the support stem 505. Disposed between the support stem 505 and the cooling hub 545 may be an insulator 555. The insulator 555 may be formed from an insulating material such as, but not limited to, polyetheretherketone (PEEK) or other insulating material that can withstand high temperatures without deforming or cracking.

[0042]

[0050] The electrostatic chuck body 525 may include one or more heating elements, such as a heater 535 having an AC heating coil. An insulating shell 536 may be provided around the heater 535 to prevent short circuits. Each heating element of the heater 535 may be coupled to a power source, such as an AC power supply, that delivers AC current to the heater 535 to heat the upper puck. The current may be delivered to the heater 535 through one or more rods or wires 537 disposed within channels formed in the stem 505 and the electrostatic chuck body 525. A temperature sensor 539 may extend along the rods or wires 537 in some embodiments.

[0043]

[0051] By utilizing a monolithic support stem 505 and electrostatic chuck body 525, the interface between the conductive material used to form the electrostatic chuck body 525 (and support stem 505) and the insulating material of the insulator 555 may be moved further from the heater 535, keeping the interface cooler and making thermal shift easier to manage as the heating and cooling features may be moved further from the substrate support surface 527.

[0044]

[0052] The support stem 505 and the lower portion of the electrostatic chuck body 525 may define one or more cooling channels 540. Each cooling channel 540 may connect to an inlet channel and an outlet channel extending into a cooling hub 545, which are fluidly coupled to a cooling fluid source. The cooling fluid source circulates cooling fluid through each cooling channel 540 to cool the lower portion of the electrostatic chuck body 525 and facilitate dissipation of excess heat generated during the plasma formation process. This may reduce or eliminate thermal shifts, resulting in more uniform film deposition on the substrate. In some embodiments, O-rings 575 may be provided around the inlet and / or outlet channels to help seal the inlet and / or outlet channels at connections between different components. For example, O-rings 575 may be disposed around the inlet and / or outlet channels between the insulator 555 and the support stem 505 and / or between the insulator 555 and the cooling hub 545.

[0045]

[0053] The electrostatic chuck body 525 may define several voids 550 therein that may act as thermal chokes within the electrostatic chuck body 525 to help distribute heat throughout the electrostatic chuck body 525. RF rods 560 may extend from the RF match of the low frequency power supply 570 to the conductive material of the monolithic electrostatic chuck body 525 and support stem 505 to provide chucking current to the electrostatic chuck body 525. In some embodiments, the RF rods 560 may include rod insulators and / or be spaced a minimum distance from the AC rods or wires 537 to shield the RF rods 560 from current from the AC power source. Because the electrostatic chuck body 525 and support stem 505 are part of a unitary structure, the RF rods 560 may extend above the electrostatic body 525 and / or may extend only within the support stem 505, such as to the bottom portion of the support stem 505.

[0046]

[0054] FIG. 6 illustrates a schematic partial cross-sectional view of an exemplary substrate support assembly 600 in accordance with some embodiments of the present technique. The substrate support assembly 600 may be similar to the substrate support assemblies 310, 400, and / or 500 and may include any of the features, components, or characteristics of the supports described above, including associated components or power supplies. The support assembly 600 may represent a partial view of a substrate support assembly of a semiconductor processing system and may not include all of the components understood to be incorporated in certain embodiments of the support assembly 600. The substrate support assembly 600 may include a support stem 605, which may be made of a conductive material. An electrostatic chuck body 625, which may include one or more components embedded or disposed within the body, may be positioned on the support stem 605. The electrostatic chuck body 625 may define a substrate support surface 627. One or more insulators 655 may be disposed between the electrostatic chuck body 625 and the support stem 605. For example, the upper end of the support stem 605 may include a support bowl 680 spaced from the bottom surface of the electrostatic chuck body 625, upon which the insulator 655 may be supported. The support bowl 680 may extend radially outward from the shaft portion of the support stem 605. For example, the support bowl 680 may extend outward such that the peripheral edge of the support bowl 680 is substantially aligned with the peripheral edge of the electrostatic chuck body 625, although the peripheral edge of the support bowl 680 may be inside or outside the peripheral edge of the electrostatic chuck body 625 in some embodiments. In some embodiments, the insulator 655 includes an inner insulator 655a and an outer insulator 655b. The inner insulator 655a may be formed from an insulating material such as, but not limited to, polyetheretherketone (PEEK) or other insulating material capable of withstanding high temperatures without deformation or cracking. The inner insulator 655a may be mechanically fastened, coupled, or otherwise secured to the support bowl 680. The outer insulator 655b may be formed from an insulating material such as aluminum oxide.To prevent cracking or other damage to the outer insulator 655b, the outer insulator 655b may float or rest above the surface of the support bowl 680 without a mechanical connection to secure the outer insulator 655b in place. In some embodiments, only a single insulator 655 or two or more insulators 655 may be used. In some embodiments, the insulator 655 may extend along the entire bottom surface of the electrostatic chuck body 625.

[0047]

[0055] In some embodiments, an insulating edge ring 685 may rest on a recessed ledge defined on the puck and extending around the outer edge of the puck. As shown, the edge ring 685 may extend radially outward along the outer edge of the electrostatic chuck body 625 and, in some embodiments, may extend beyond and contact the outer edge of the electrostatic chuck body 625. The edge ring 685 may extend beyond the top edge of the electrostatic chuck body 625 such that the inner edge of the edge ring 685 forms the outer edge of the substrate support surface 627. This ensures that when a substrate 690 is seated on the substrate support surface 627, the entire top surface of the electrostatic chuck body 625 is covered by the substrate 690 and the edge ring 685. Covering the top surface of the electrostatic chuck body 625 may protect the top surface of the electrostatic chuck body 625 from plasma and film deposition, which may lead to uniformity issues in future processing operations. By providing the edge ring 685 and the insulator 655, the entire outer surface (or a substantial portion thereof) of the electrostatic chuck body 625 may be protected from plasma formation and film deposition during processing operations.

[0048]

[0056] Some or all of the electrostatic chuck body 625 may be coated with a dielectric material 630. In some embodiments, the dielectric material 630 may be provided only on the substrate support surface 627, while in other embodiments, the dielectric material 630 may be provided on other surfaces of the electrostatic chuck body 625. For example, a coating of the dielectric material 630 may be provided on the entire top surface of the electrostatic chuck body 625, the side surfaces of the electrostatic chuck body 625, the bottom surface of the electrostatic chuck body 625, and / or the entire outer surface of the electrostatic chuck body 625. In certain embodiments, a coating of the dielectric material may be provided on all outer surfaces of the electrostatic chuck body 625 except for the interface between the electrostatic chuck body 625 and the inner insulator 655a.

[0049]

[0057] The electrostatic chuck body 625 may include one or more heating elements, such as an embedded heater 635 having an AC heating coil. An insulating shell 636 may be provided around the heater 635 to prevent short circuits. Each heating element of the heater 635 may be coupled to a power source, such as an AC power source 695, that delivers AC current to the heater 635 to heat the upper puck. The current may be delivered to the heater 635 through one or more rods or wires 637 disposed within channels formed in the stem 605 and the electrostatic chuck body 625. A temperature sensor 639 may extend along the rods or wires 637 in some embodiments.

[0050]

[0058] The lower portion of the electrostatic chuck body 625 may define one or more cooling channels 640. Each cooling channel 640 may be fluidly coupled to a cooling fluid source via inlet and outlet channels extending through the support stem 605. The cooling fluid source circulates cooling fluid through each cooling channel 640 to cool the lower portion of the electrostatic chuck body 625 and facilitate dissipation of excess heat generated during the plasma formation process. This may reduce or eliminate thermal shifts, resulting in more uniform film deposition on the substrate. In some embodiments, O-rings may be provided around the inlet and / or outlet channels to help seal the inlet and / or outlet channels at connections between different components.

[0051]

[0059] The electrostatic chuck body 625 may define several voids 650 within the electrostatic chuck body 625 that may act as thermal chokes within the electrostatic chuck body 625 to help distribute heat throughout the electrostatic chuck body 625. RF rods 660 may extend from an RF match of the low frequency power supply 670 to the conductive material of the electrostatic chuck body 625 to provide chucking current to the electrostatic chuck body 625. In some embodiments, the RF rods 660 may include rod insulators and / or be spaced a minimum distance apart from the AC rods or wires 637 to shield the RF rods 660 from current from the AC power supply.

[0052]

[0060] FIG. 7 illustrates a schematic, partial cross-sectional view of a substrate support assembly 700 in accordance with some embodiments of the present technique. The substrate support assembly 700 may be similar to substrate support assemblies 310, 400, 500, and / or 600 and may include any of the features, components, or characteristics of the supports described above, including associated components or power supplies. The support assembly 700 may represent a partial view of a substrate support assembly of a semiconductor processing system and may not include all of the components understood to be incorporated in certain embodiments of the support assembly 700. The substrate support assembly 700 may include a support stem 705, which may be formed from one or more conductive materials. An electrostatic chuck body 725, which may include one or more components embedded or disposed within the body, may be positioned above the support stem 705. Components incorporated within the top puck may not be exposed to process materials in some embodiments and may be retained entirely within the chuck body 725. The electrostatic chuck body 725 may define a substrate support surface 727 and may be characterized by a thickness and a length or diameter depending on the particular shape of the chuck body. In some embodiments, the chuck body 725 may be elliptical and may be characterized by one or more radial dimensions from a central axis through the chuck body. It should be understood that the upper puck may be any shape and may define any length from a central location of the chuck body 725 when radial dimensions are discussed.

[0053]

[0061] The electrostatic chuck body 725 includes a support plate 730 that defines a substrate surface 727. The support plate 730 may be formed from an insulating or dielectric material. For example, oxides, nitrides, carbides, and other materials can be used to form the support plate 730. Exemplary materials may include ceramics including aluminum oxide, aluminum nitride, silicon carbide, tungsten carbide, and oxides, nitrides, carbides, borides, or titanates of other metals or transition metals, as well as combinations of these materials with other insulating or dielectric materials. The electrostatic chuck body 725 may include a cooling plate 735 positioned below the support plate 730 and coupled to the upper end of the support stem 705. The cooling plate 735 may be formed from a material with high thermal conductivity. High thermal conductivity helps dissipate excess heat from the support plate 730 and reduce thermal shifts that can lead to film non-uniformities on the substrate. Additionally, the material forming the cooling plate 735 may have a similar coefficient of thermal expansion to that of the support plate 730 to prevent damage or deformation of the electrostatic chuck body 725 during temperature fluctuations. For example, the difference in the coefficients of thermal expansion between the support plate 730 and the cooling plate 735 may be about 20% or less, about 15% or less, about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less. In some embodiments, the cooling plate 735 may be formed of a material such as aluminum silicon carbide and / or molybdenum. A bonding layer may be positioned between the support plate 730 and the cooling plate 735. For example, a thin bonding layer 740 of aluminum or other material capable of withstanding high temperatures may be used to secure the support plate 730 onto the cooling plate 735. The bonding layer 740 can be about 50 μm or less in thickness, about 45 μm or less in thickness, about 40 μm or less in thickness, about 35 μm or less in thickness, about 30 μm or less in thickness, about 25 μm or less in thickness, about 20 μm or less in thickness, about 15 μm or less in thickness, about 10 μm or less in thickness, about 5 μm or less in thickness, about 4 μm or less in thickness, about 3 μm or less in thickness, about 2 μm or less in thickness, about 1 μm or less in thickness, or less. The bonding layer material can be characterized by a larger coefficient of thermal expansion than other materials, but the incorporation of trace amounts can limit temperature effects between the components.

[0054]

[0062] Dissipation of excess heat can be further aided by the design of the support stem 705. For example, in some embodiments, the support stem 705 can include an upper portion 707 and a lower portion 709. The upper portion 707 can be formed of a high thermal conductivity material similar to the cooling plate 735, such as aluminum silicon carbide and / or molybdenum. The material of the upper portion 707 can be selected to have a similar thermal expansion coefficient to the cooling plate 735. The lower portion 709 can be formed of a conductive material, such as aluminum, and can have a greater thermal expansion coefficient than the material forming the upper portion 707. The high electrical conductivity of both the upper portion 707 and the lower portion 709 can help dissipate heat from the support plate 730 and the substrate support surface 727 to reduce thermal shift caused by the substrate. The support stem 705 can be thicker than conventional support stems to provide a greater amount of conductive material to dissipate greater levels of heat. For example, the support stem 705 may have a minimum thickness of about or at least 10 cm, about or at least 11 cm, about or at least 12 cm, about or at least 13 cm, about or at least 14 cm, about or at least 15 cm, or more.

[0055]

[0063] The support plate 730 may be coupled to a power source, such as an AC power source, that delivers AC current to the support plate 730 to heat the upper puck. The current may be delivered to the support plate 730 through one or more rods or wires 737 disposed within channels formed in the stem 705 and the electrostatic chuck body 725. A temperature sensor 739 may, in some embodiments, extend along the rod or wire 737. The support plate 730 may have an operating temperature range that heats the chuck body 725 and / or substrate to about 100°C or above, and the heater may be configured to heat to about 125°C or above, about 150°C or above, about 175°C or above, about 200°C or above, about 250°C or above, about 300°C or above, or above. The heater may also be configured to operate in any range subsumed between any two of these recited values, or in a smaller range subsumed within any of these ranges.

[0056]

[0064] The support plate 730 may include a chuck electrode 750. For example, the support plate 730 may include a first bipolar electrode 750a, which may be embedded within the chuck body proximate the substrate support surface 727. The electrode 750a may be electrically coupled to a DC power source using RF rods 755a, which may be configured to supply energy or voltage to the conductive chuck electrode 750a. This may be operated to form a plasma of a precursor within the processing region of the semiconductor processing chamber, although other plasma operations may be sustained as well. For example, the electrode 750a may be a chuck mesh that acts as an electrical ground for a capacitive plasma system that includes an RF source electrically coupled to a showerhead. For example, the electrode 750a may act as a ground path for RF power from the RF source and simultaneously act as an electrical bias for the substrate to provide electrostatic clamping of the substrate to the substrate support surface 727. The power supply may include a filter, a power source, and several other electrical components configured to provide the chucking voltage.

[0057]

[0065] The support plate 730 may include a second bipolar electrode 750b, which may also be embedded within the chuck body proximate the substrate support surface. The electrode 750b may be electrically coupled to a DC power source using RF rods 755b. The power source may be configured to provide energy or voltage to the conductive chuck electrode 750b.

[0058]

[0066] FIG. 8 illustrates a schematic, partial cross-sectional view of a substrate support assembly 700 in accordance with some embodiments of the present technique. The substrate support assembly 800 may be similar to the substrate support assemblies 310, 400, 500, 600, and / or 700 and may include any of the features, components, or characteristics of the supports described above, including associated components or power supplies. The support assembly 800 may represent a partial view of a substrate support assembly of a semiconductor processing system and may not include all of the components understood to be incorporated in certain embodiments of the support assembly 800. The substrate support assembly 800 may include a support stem 805, which may be formed from one or more electrically conductive materials. An electrostatic chuck body 825 may be positioned above the support stem 805. The electrostatic chuck body 825 may include a support plate 830 that defines a substrate surface 827. The electrostatic chuck body 825 may include a cooling plate 835 that may be positioned below the support plate 830 and coupled to the top end of the support stem 840 using a bonding layer 840. The support stem 805 may, in some embodiments, include an upper portion 807 and a lower portion 809 .

[0059]

[0067] The support plate 830 may be coupled to a power source, such as an AC power source, that delivers AC current to the support plate 830 to heat the upper puck. The current may be delivered to the support plate 830 through one or more rods or wires 837 disposed within channels formed in the stem 805 and the electrostatic chuck body 825. A temperature sensor 839 may extend along the rod or wire 837 in some embodiments. The support plate 830 may include a chuck electrode 850. For example, the support plate 830 may include a first bipolar electrode 850a, which may be embedded within the chuck body proximate the substrate support surface 827. The electrode 850a may be electrically coupled to a DC power source using an RF rod 855a, which may be configured to supply energy or voltage to the conductive chuck electrode 850a. The support plate 830 may include a second bipolar electrode 850b, which may also be embedded within the chuck body proximate the substrate support surface. Electrode 850b can be electrically coupled to a DC power source using RF rod 855b.

[0060]

[0068] The cooling plate 830 and the support stem 805 may define one or more cooling channels 860. For example, the upper end of each cooling channel 860 may be formed within the cooling plate 860 or may extend through the support stem 805. In some embodiments, each cooling channel 860 may form a circular, spiral, or other circuit pattern around the interior of the cooling plate 830 and may be connected to a cooling fluid source through inlet and outlet channels extending through the support stem 805. A cooling fluid, such as water or Galden, circulates through each cooling channel 860 to actively cool the cooling and help dissipate excess heat generated during the plasma formation process. This may reduce or eliminate thermal shifts, resulting in more uniform film deposition on the substrate. The cooling fluid may be circulated at a temperature of about 100°C or less, about 95°C or less, about 90°C or less, about 85°C or less, about 80°C or less, about 75°C or less, about 70°C or less, about 65°C or less, about 60°C or less, about 55°C or less, or about 50°C or less, or lower.

[0061]

[0069] 9 illustrates operations of an exemplary method 900 of semiconductor processing in accordance with some embodiments of the present technique. The method may be performed in a variety of processing chambers, including the processing system 200 or chamber 300 described above, which may include a substrate support assembly in accordance with embodiments of the present technique, such as the substrate support assemblies 310, 400, 500, 600, 700, and / or 800 described herein. The method 900 may include many optional operations that may or may not be particularly relevant to some embodiments of methods in accordance with the present technique.

[0062]

[0070] Method 900 may include processing methods that may include operations for forming a hard mask film or other deposition operations. The method may include optional operations before the start of method 900, or the method may include additional operations. For example, method 900 may include operations performed in a different order than those illustrated. In some embodiments, method 900 may include, in operation 905, heating the top surface of the substrate support assembly. For example, an AC current may be supplied to a heating element and / or a dielectric support plate to heat the top of the electrostatic chuck body. While the substrate and / or support may be heated to any of the temperatures previously described, in some embodiments, the substrate support may be heated to a temperature of about 80° C. or greater, while being heated to a temperature of about 500° C. or less, about 400° C. or less, about 300° C. or less, or less. In some embodiments, a chucking voltage may be used to clamp the semiconductor substrate to the support surface of the substrate platform. In operation 910, one or more precursors may be flowed into a processing chamber. For example, the precursors may be flowed into a chamber such as chamber 300. In operation 915, a plasma of the precursor may be generated in the processing region, such as by providing RF power to a faceplate to generate the plasma.

[0063]

[0071] During plasma generation, the bottom of the substrate support may be cooled in operation 920. For example, the bottom of the substrate support may be cooled to dissipate excess heat generated during the exothermic reaction that forms the plasma. The cooling of the bottom of the substrate support may at least partially overlap with the heating of the top of the electrostatic chuck body, such that the electrostatic chuck body is simultaneously heated and cooled. In some embodiments, the cooling may be passive, using the electrostatic chuck body and / or support stem at least partially formed of a material with high thermal conductivity. In some embodiments, active cooling may be provided by circulating a cooling fluid through one or more cooling channels formed in the electrostatic chuck body and support stem. Material formed in the plasma may be deposited on the substrate in operation 925. Heating power may be adjusted to accommodate the active cooling and / or heat generation due to plasma generation. By improving the cooling of the substrate support during plasma operation, heating effects from the plasma may be more completely or efficiently counteracted, and the processing temperature may be more consistently maintained during processing over a period of time. For example, the techniques may enable the temperature of the substrate or substrate support to be maintained within ±5°C during operation, and may enable the temperature to be maintained within ±4.5°C, ±4.0°C, ±3.5°C, ±3.0°C, ±2.5°C, ±2.0°C, ±1.5°C, ±0.5°C, or less, which may improve processing uniformity across the substrate.

[0064]

[0072] Although the above description, for purposes of explanation, sets forth certain details in order to facilitate an understanding of various embodiments of the present technology, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional implementation details.

[0065]

[0073] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the essence of the embodiments. In addition, in order to avoid unnecessarily obscuring the technology, some well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the technology.

[0066]

[0074] Where a range of values ​​is provided, each intervening value between the upper and lower limits of that range is understood to be specifically disclosed, to the smallest unit of the lower limit (unless the context clearly dictates otherwise). Narrower ranges between any stated or unstated intervening values ​​in a stated range, as well as all other stated or intervening values ​​in such stated range, are encompassed. The upper and lower limits of any narrower range may individually be included in or excluded from the range. Each range where either, neither, or both limits are included in the narrower range is also encompassed within the technology, provided that there is a specifically excluded limit in the stated range. When a stated range includes one or both limits, ranges excluding either or both of those included limits are also included.

[0067]

[0075] As used in this specification and the appended claims, the singular forms "a", "an" and "the" include the plural (unless the context clearly dictates otherwise). Thus, for example, a reference to "a heater" includes a plurality of such heaters, and a reference to "the rod" includes a reference to one or more rods and equivalents thereof known to those skilled in the art, and so forth.

[0068]

[0076] Additionally, the words "comprise(s) / comprising", "contain(s) / containing", and "include(s) / including", when used in this specification and the following claims, are intended to specify the presence of stated features, integers, components, or operations, but do not exclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. 1. A substrate support assembly comprising: an electrostatic chuck body defining a substrate support surface defining a substrate seat, the substrate support surface including a dielectric coating; a support stem connected to the electrostatic chuck body; a cooling hub positioned below a base of the support stem and coupled to a cooling fluid source, the electrostatic chuck body defining at least one cooling channel in communication with the cooling fluid source; a heater embedded in the electrostatic chuck body; an AC power rod extending through the support stem and electrically connected to the heater; a plurality of voids formed in the electrostatic chuck body between the at least one cooling channel and the heater; a substrate support assembly including:

2. The substrate support assembly of claim 1 , further comprising an RF rod extending through the support stem and electrically coupled to the electrostatic chuck body.

3. The substrate support assembly of claim 1 , wherein the dielectric coating covers the entire outer surface of the electrostatic chuck body.

4. The substrate support assembly of claim 1 , further comprising an insulator disposed between the electrostatic chuck body and the support stem.

5. The substrate support assembly of claim 1 , wherein the electrostatic chuck body and the support stem are formed as a unitary structure.

6. The substrate support assembly of claim 5 , further comprising an insulator disposed between the support stem and the cooling hub.

7. an upper end of the support stem including a support bowl spaced apart from a bottom surface of the electrostatic chuck body; at least one insulator is supported on the support bowl and is disposed between the support bowl and the electrostatic chuck body; The substrate support assembly of claim 1 .

8. The substrate support assembly of claim 7 , wherein the at least one insulator comprises an inner polymeric insulator and an outer ceramic insulator.

9. 8. The substrate support assembly of claim 7, further comprising an insulating edge ring seated on a recessed ledge of the electrostatic chuck body extending radially outward along an outer edge of the electrostatic chuck body.

10. 1. A substrate support assembly comprising: an electrostatic chuck body defining a substrate support surface defining a substrate seat, A cooling plate; a support plate positioned above the cooling plate; a bonding layer disposed between the cooling plate and the support plate; an electrostatic chuck body including: a support stem connected to the electrostatic chuck body; an AC heating wire electrically connected to the support plate; a substrate support assembly including:

11. a first bipolar electrode embedded within the support plate; a second bipolar electrode embedded within the support plate; The substrate support assembly of claim 10 , further comprising:

12. The substrate support assembly of claim 10 , wherein the support stem has a minimum diameter of at least or about 10 cm.

13. The substrate support assembly of claim 10 , wherein the cooling plate defines at least one cooling channel in communication with a cooling fluid source.

14. The substrate support assembly of claim 13 , wherein the at least one cooling channel forms a circuit-like pattern in the cooling plate.

15. The substrate support assembly of claim 10 , wherein the coefficient of thermal expansion of the support plate and the coefficient of thermal expansion of the cooling plate differ by no more than about 10%.

16. The substrate support assembly of claim 10 , wherein the support stem includes an upper portion and a lower portion, the upper portion having a lower coefficient of thermal expansion than the lower portion.

17. The substrate support assembly of claim 10 , further comprising a bonding layer disposed between the cooling plate and the support stem.

18. 1. A method of processing a substrate, comprising: heating a top surface of the substrate support assembly; flowing a precursor into a processing chamber; The processing chamber includes a substrate support assembly on which a substrate is disposed, the substrate support assembly comprising: an electrostatic chuck body; a support stem connected to the electrostatic chuck body; an AC heating wire electrically coupled to the conductive material within the electrostatic chuck body; flowing a precursor comprising: generating a plasma of the precursor in a processing region of the processing chamber; cooling a bottom portion of the substrate support assembly while heating the top surface; depositing a material onto the substrate; A method comprising:

19. 20. The method of processing a substrate of claim 18, wherein cooling the bottom of the substrate support assembly comprises flowing a fluid through one or more cooling channels formed in a portion of the electrostatic chuck body.

20. 20. The method of processing a substrate of claim 18, further comprising clamping the semiconductor substrate to a support surface of a substrate platform using a chucking voltage.

Images