Display device

Abstract

To provide a display device with a light detecting function and high reliability.SOLUTION: A display device includes a light-receiving device and a light-emitting device. The light-receiving device includes an active layer between a pair of electrodes. The light-emitting device includes a hole injection layer, a light-emitting layer, and an electron transport layer between a pair of electrodes. The light-receiving device and the light-emitting device may include one electrode as a common layer, and further include a common layer between the pair of electrodes. The hole injection layer is in contact with an anode, and contains a first compound and a second compound. The electron transport property of the electron transport layer is low and the light-emitting layer does not easily have too many electrons. The first compound has an electron acceptability for the second compound. The second compound has a HOMO level of -5.7 eV or more and -5.4 eV or less.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a display device, a display module, and an electronic device. has a light receiving device (also called a light receiving element) and a light emitting device (also called a light emitting element) This relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, display devices are expected to be used in a variety of applications. For example, the use of large display devices Examples include home television equipment (also called televisions or television receivers), digital Digital Signage, PID (Public Information Disclosure) c Information Display) and other mobile information terminals. As a result, development of smartphones and tablet devices equipped with touch panels is underway.

[0004] As a display device, for example, a light-emitting device having a light-emitting device has been developed. Electroluminescence (hereinafter referred to as EL) phenomenon The light-emitting devices used (also called EL devices or EL elements) can be easily made thin and lightweight. It has the following characteristics: it can respond quickly to input signals, and it can be driven using a low-voltage DC power supply. For example, Patent Document 1 discloses an organic EL device (organic A flexible light-emitting device using a light-emitting diode (EL element) is disclosed. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-197522 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one embodiment of the present invention is to provide a display device having a light detection function. An object of one embodiment of the present invention is to provide a display device that has a light detection function and high reliability. An object of one embodiment of the present invention is to provide a highly convenient display device. An object of one embodiment of the present invention is to provide a multifunctional display device. An object of the present invention is to provide a display device with high display quality. An object of the present invention is to provide a display device with high emission sensitivity. One of the objects of the present invention is to provide a display device.

[0007] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0008] One embodiment of the present invention is a display device including a light-receiving device and a light-emitting device. The light emitting device has a first pixel electrode, an active layer, and a common electrode. The active layer comprises a first pixel electrode, a hole injection layer, a light emitting layer, an electron transport layer, and a common electrode. The light-emitting layer is located on the second pixel electrode and includes a first organic compound. and a second organic compound different from the first organic compound. a portion overlapping with the first pixel electrode via a light-emitting layer, and a portion overlapping with the second pixel electrode via a light-emitting layer; The hole injection layer is formed on the electrode that functions as an anode out of the second pixel electrode and the common electrode. The electron transport layer is in contact with the first compound and the second compound. The first compound has electron-accepting properties for the second compound. The OMO level is between -5.7 eV and -5.4 eV. The electric field strength [V / cm] is 600. Child mobility is 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less. The device preferably further comprises a hole injection layer. The hole injection layer is formed by connecting the first pixel electrode a portion overlapping the active layer and a portion overlapping the light-emitting layer, the portion being located on the first pixel electrode and the second pixel electrode; , preferably.

[0009] One embodiment of the present invention is a display device including a light-receiving device and a light-emitting device. The light emitting device has a first pixel electrode, an active layer, and a common electrode. The active layer is located on the first pixel electrode, a light-emitting layer, an electron transport layer, and a common electrode. The light-emitting layer is located on the second pixel electrode and includes a first organic compound. The common electrode is connected to the first organic compound via the active layer. The first pixel electrode has a portion overlapping the pixel electrode and a portion overlapping the second pixel electrode via the light-emitting layer. The electron transport layer includes an electron transporting material and a first substance. The first substance is a metal, a metal salt, or the like. , a metal oxide, or an organometallic complex. The electron transport layer comprises a first region, a second region, and The first region and the second region have different concentrations of the first substance. When the first region is located closer to the light-emitting layer than the second region, the first region has a larger diameter than the second region. The concentration of the first substance is preferably high. The electron transporting material has a HOMO level of −6.0e V or more, and the electron mobility at the square root of the electric field strength [V / cm] is 1 × 1 0 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less. The device preferably further comprises a hole injection layer. The hole injection layer is connected to the second pixel electrode and The hole injection layer is in contact with the electrode that functions as an anode out of the common electrode and the first compound and It is preferable that the first compound has an electron acceptor for the second compound. The HOMO level of the second compound is preferably -5.7 eV or more and -5. It is preferably 4 eV or less.

[0010] The light-receiving device preferably further comprises an electron transport layer. A portion of the first pixel electrode overlapping the active layer and a portion of the second pixel electrode overlapping the light-emitting layer are It is preferred that the ion exchange resin has a portion.

[0011] Preferably, the light receiving device and the light emitting device further comprise a common layer. a portion located on the first pixel electrode and the second pixel electrode and overlapping with the active layer; and a light-emitting layer and an overlapping portion.

[0012] Preferably, the light-emitting device further comprises a first hole transport layer. Preferably, the compound has a third compound. The HOMO level of the third compound is higher than that of the second compound. The HOMO level of the third compound is equal to or lower than the HOMO level of the second compound. The difference between the HOMO level and the second compound is preferably within 0.2 eV. The compounds have a carbazole skeleton, a dibenzofuran skeleton, and a dibenzothiophene skeleton, respectively. and an anthracene skeleton.

[0013] Preferably, the light-emitting device further comprises a second hole transport layer. It is preferable that the fourth compound has a HOMO level lower than that of the third compound. The second compound, the third compound, and the fourth compound preferably have a HOMO level lower than that of the first compound. The compounds have a carbazole skeleton, a dibenzofuran skeleton, and a dibenzothiophene skeleton, respectively. and an anthracene skeleton.

[0014] The first substance is an organometallic complex having an alkali metal or alkaline earth metal. The first substance is preferably a compound having a nitrogen- and oxygen-containing ligand and an alkali metal or alkali metal ion. The first substance is preferably an organometallic complex having a quinolinol and an alkali earth metal. an organometallic complex having a hydroxyl ligand and an alkali metal or alkaline earth metal; is preferred.

[0015] Preferably, the light emitting device exhibits blue light.

[0016] Preferably, the light emitting device is a fluorescent light emitting device.

[0017] The display device according to one aspect of the present invention preferably further includes a resin layer, a light-shielding layer, and a substrate. The resin layer and the light-shielding layer are preferably located between the common electrode and the substrate.

[0018] For example, the resin layer preferably has an opening that overlaps with the light-receiving device. It is preferable that the light-shielding layer has a portion overlapping with the device. The light-shielding layer is located between the common electrode and the resin layer. The light-shielding layer preferably has a portion where the light-shielding layer is placed. It is preferable to cover at least a part of the exposed side surface of the resin layer.

[0019] Alternatively, the resin layer is preferably provided in an island shape and has a portion overlapping the light emitting device. It is preferable that the light-shielding layer has a portion located between the common electrode and the resin layer. At least a part of the light that passes through the plate is incident on the light-receiving device without passing through the resin layer. It is preferable that the light-shielding layer covers at least a part of the side surface of the resin layer.

[0020] The display device according to one embodiment of the present invention preferably further includes an adhesive layer. The resin layer and the light-shielding layer are preferably positioned between the electrode and the substrate. The adhesive layer has a first portion that overlaps the light-receiving device and a second portion that overlaps the light-receiving device. and a second portion overlapping the light emitting device. It is preferable that the thickness is thicker than the thickness.

[0021] The display device according to one embodiment of the present invention preferably has flexibility.

[0022] One aspect of the present invention is a display device having any of the above configurations, board (Flexible Printed Circuit, hereinafter referred to as FPC) or is equipped with a connector such as TCP (Tape Carrier Package) Module, or COG (Chip On Glass) or COF (Chi Modules such as modules on which integrated circuits (ICs) are mounted using the "p On Film" method, etc. It is a rule.

[0023] One aspect of the present invention is a device including the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button. [Effects of the Invention]

[0024] According to one embodiment of the present invention, a display device having a light detection function can be provided. Thus, a highly reliable display device having a light detection function can be provided. According to one embodiment of the present invention, a multifunctional display device can be provided. According to one embodiment of the present invention, a display device with high display quality can be provided. In this manner, a display device with high sensitivity for detecting light can be provided. A display device can be provided.

[0025] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0026] [Figure 1] Figures 1(A) to 1(D) are cross-sectional views showing an example of a display device, and Figures 1(E) to 1(I) are top views showing an example of a pixel. [Figure 2] FIG. 2 is a cross-sectional view showing an example of a display device. [Figure 3] Fig. 3(A) is a cross-sectional view showing an example of a display device, and Fig. 3(B) and Fig. 3(C) are diagrams showing an example of the top surface layout of a resin layer. [Figure 4] 4(A) and 4(B) are cross-sectional views showing an example of a display device. [Figure 5] 5(A) to 5(C) are cross-sectional views showing an example of a display device. [Figure 6] 6(A) to 6(C) are cross-sectional views showing an example of a display device. [Figure 7] 7A is a top view showing an example of a display device, and FIG. 7B is a cross-sectional view showing an example of a display device. [Figure 8] 8(A) and 8(B) are cross-sectional views showing an example of a display device. [Figure 9] 9A is a top view showing an example of a display device, and FIG. 9B is a cross-sectional view showing an example of a display device. [Figure 10] 10(A) is a top view showing an example of a display device, and FIG. 10(B) is a cross-sectional view showing an example of a display device. [Figure 11] 11(A) and 11(B) are cross-sectional views showing an example of a display device. [Figure 12] 12(A) and 12(B) are cross-sectional views showing an example of a display device. [Figure 13] FIG. 1 is a perspective view illustrating an example of a display device. [Figure 14] FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 15] 15(A) and 15(B) are cross-sectional views showing an example of a display device. [Figure 16]FIG. 1 is a cross-sectional view showing an example of a display device. [Figure 17] 17A is a cross-sectional view illustrating an example of a display device, and FIG 17B is a cross-sectional view illustrating an example of a transistor. [Figure 18] 18(A) to 18(D) are cross-sectional views showing examples of light-emitting devices. [Figure 19] Figures 19(A) to 19(C) are conceptual diagrams illustrating a light emission model of a light emitting device, and Figure 19(D) is a diagram illustrating normalized luminance of a light emitting device over time. [Figure 20] 20(A) to 20(D) are diagrams illustrating the concentration of the first substance in the electron transport layer. [Figure 21] 21(A) and 21(B) are circuit diagrams showing examples of pixel circuits. [Figure 22] Fig. 22(A) is a block diagram showing an example of a pixel, and Fig. 22(B) is a circuit diagram showing an example of a pixel circuit. [Figure 23] 23(A) and 23(B) are diagrams showing an example of an electronic device. [Figure 24] 24(A) to 24(D) are diagrams showing examples of electronic devices. [Figure 25] 25(A) to 25(F) are diagrams showing examples of electronic devices. [Figure 26] FIG. 26 shows the structure of an electronics-only device. [Figure 27] FIG. 27 shows the current density-voltage characteristics of an electron-only device. [Figure 28] FIG. 28 is a diagram showing the frequency characteristics of the calculated capacitance C of ZADN:Liq(1:1) at a DC voltage of 7.0V. [Figure 29] FIG. 29 is a diagram showing the frequency characteristics of −ΔB of ZADN:Liq(1:1) at a DC voltage of 7.0 V. [Figure 30] FIG. 30 is a diagram showing the electric field strength dependence of electron mobility in each organic compound. DETAILED DESCRIPTION OF THE INVENTION

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in the form and details thereof without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be achieved by the following embodiments. It should not be construed as being limited to the contents described.

[0028] In the configuration of the invention described below, the same parts or parts having similar functions are designated by the same reference numerals. The same reference numerals are used in common among different drawings, and the repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be added.

[0029] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0030] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." Alternatively, for example, the term "insulating film" can be changed to " The term "insulating layer" may be changed to "insulating layer."

[0031] (Embodiment 1) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0032] The display device of this embodiment has a light receiving device and a light emitting device in the display section. In the display device of this form, light-emitting devices are arranged in a matrix on the display section, and The display unit can display an image. The display unit also includes a matrix of light-receiving devices. The display unit also functions as a light receiving unit. It can be used as a touch sensor or a sensor that detects light. It can capture images and detect the proximity or contact of an object (such as a finger or pen). Furthermore, the display device of the present embodiment can use the light emitting device as a light source for the sensor. Therefore, it is not necessary to provide a light receiving section and a light source separately from the display device, and the light receiving section and the light source can be easily mounted on the electronic device. The number of points can be reduced.

[0033] In the display device of this embodiment, when light emitted from a light-emitting device included in a display portion is reflected by an object, The light-receiving device can detect the reflected light, so imaging and touch (near touch) can be performed even in dark places. It is possible to detect (including chips).

[0034] The display device of this embodiment mode has a function of displaying an image using a light-emitting device. Thus, the light-emitting device functions as a display device.

[0035] As a light-emitting device, OLED (Organic Light Emitting Diode) iode) and QLED(Quantum-dot Light Emitting Di) It is preferable to use an EL device such as an EL device. These include fluorescent materials, phosphorescent materials, and inorganic compounds ( quantum dot materials), materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence lly Activated Delayed Fluorescence (TADF) In addition, light-emitting devices include micro LEDs (Light E Alternatively, an LED such as a light emitting diode (LED) can be used.

[0036] The display device of this embodiment mode has a function of detecting light using a light-receiving device.

[0037] When the light receiving device is used as an image sensor, the display device of the present embodiment is For example, the display device of the present embodiment can capture an image using a scanner. It can be used as:

[0038] For example, using an image sensor to acquire data such as fingerprints, palm prints, or irises. That is, the display device of this embodiment can incorporate a biometric authentication sensor. By incorporating a biometric authentication sensor into the display device, it is possible to install a biometric authentication sensor separately from the display device. Compared to when a switch is provided, the number of parts in the electronic device can be reduced, and the electronic device can be made smaller and lighter. It is possible to do this.

[0039] In addition, the image sensor is used to measure the user's facial expression, eye movement, or changes in pupil diameter. By analyzing this data, the user's physical and mental information can be obtained. Based on this information, the display and / or audio output contents can be changed. By doing so, for example, it will be possible to develop devices for VR (Virtual Reality) and AR (Au Devices for Enhanced Reality or Mixed Reality ) devices, it is possible to ensure that users can use the devices safely.

[0040] In addition, when the light receiving device is used as a touch sensor, the display device of the present embodiment The chair can be used to detect the proximity or contact of an object.

[0041] As the light receiving device, for example, a pn-type or pin-type photodiode is used. The light-receiving device is a photoelectric converter that detects the light incident on the device and generates an electric charge. It functions as a photoelectric conversion device, and the amount of charge generated is determined by the amount of incident light.

[0042] In particular, an organic photodiode having a layer containing an organic compound is used as the light receiving device. The organic photodiode can be easily made thin, lightweight, and large in area. Furthermore, since there is a high degree of freedom in shape and design, it can be applied to a variety of display devices.

[0043] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and a An organic photodiode is used. The organic EL device and the organic photodiode are made of the same substrate. Therefore, it is possible to form an organic film on a display device using an organic EL device. A photodiode can be built in.

[0044] When trying to create all the layers that make up an organic EL device and an organic photodiode, The organic photodiode has the same structure as the organic EL device. Since there are many layers that can be combined, layers that can have a common configuration can be formed in one go, reducing the number of film formation processes. In addition, even if the number of film formations is the same, film formation can be suppressed only on some devices. By reducing the number of layers to be used, the influence of misalignment of the deposition pattern can be reduced. Reduces the effect of dust (including small foreign objects called particles) adhering to the surface of the mask. This makes it possible to increase the yield of manufacturing the display device. can.

[0045] For example, one of the pair of electrodes (common electrode) may be shared by the light receiving device and the light emitting device. In addition, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron It is preferable that at least one of the injection layers is a layer common to the light-receiving device and the light-emitting device. In addition, for example, the active layer of the light receiving device and the light emitting layer of the light emitting device are separately formed, and The layers other than the above may have the same configuration in the light-emitting device and the light-receiving device. In addition, since the light receiving device and the light emitting device have a common layer, the number of film formations and the number of masks can be reduced. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0046] The layers that the light-receiving device and the light-emitting device have in common have the same function as the light-receiving device. In this specification, the function of the light emitting device may differ from that of the light emitting device. For example, a hole injection layer is a layer that It functions as a hole injection layer and a hole transport layer in a light receiving device. The injection layer functions as an electron injection layer in a light-emitting device and as an electron transport layer in a light-receiving device. It functions as a transport layer.

[0047] A display device according to one embodiment of the present invention includes a light-receiving device and a light-emitting device in a display portion. The device has a first pixel electrode, an active layer, and a common electrode. The active layer includes a pixel electrode, a light-emitting layer, and a common electrode. The active layer is located on the first pixel electrode. The light-emitting layer is located on the second pixel electrode and includes the first organic compound. The common electrode is connected to the first pixel electrode through the active layer. The first electrode has a portion overlapping the first electrode and a portion overlapping the second pixel electrode via the light-emitting layer.

[0048] Preferably, the light-emitting device further comprises a hole injection layer and an electron transport layer. The hole injection layer is in contact with the electrode that functions as an anode out of the second pixel electrode and the common electrode, and The electron transport layer includes a first compound and a second compound. The electron transport layer includes an electron transporting material. The first compound has electron accepting properties for the second compound. The HOMO level of the electron transporting material is -5.7 eV or more and -5.4 eV or less. Electron mobility at 6.0 eV or more and the square root of the electric field strength [V / cm] is 600 is 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less.

[0049] Alternatively, the light-emitting device preferably further comprises an electron transport layer. The transport layer includes an electron transporting material and a first substance. The first substance may be a metal, a metal salt, or a The electron transport layer is a metal oxide or an organometallic complex. The electron transport layer comprises a first region, a second region, and The first region and the second region have different concentrations of the first substance. When the first region is located closer to the light-emitting layer than the second region, the first region is In all cases, it is preferable that the concentration of the first substance is high. 0 eV or more, and the electron mobility at the square root of the electric field strength [V / cm] is 600 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 It is preferable that the value is equal to or less than / Vs.

[0050] In the light-emitting device according to one embodiment of the present invention, holes are easily injected into the light-emitting layer, and electrons are easily injected into the light-emitting layer. This structure allows holes to be easily injected from the anode side, and allows current to flow from the cathode side to the light-emitting layer. By suppressing the amount of injected electrons, it is possible to prevent the light-emitting layer from becoming in an electron excess state. As time passes, electrons are injected into the light-emitting layer, and the brightness increases. This can offset the initial deterioration. Initial deterioration is suppressed, resulting in a very long operating life. Use of a light-emitting device can improve reliability. The light emitting device used in the display device will be described in detail in the second embodiment.

[0051] On the display surface of the display device according to one embodiment of the present invention, light emitted from the light-emitting device is extracted, and The light irradiated to the light receiving device passes through the light receiving device. It is preferable that the light-emitting device has a light-shielding layer on the display surface side. The light is taken out of the display device through the opening (or the area where the light-shielding layer is not provided). It is preferable that the light-receiving device has an opening in the light-shielding layer (or an area where the light-shielding layer is not provided). It is preferable that the light is irradiated through the optical fiber.

[0052] The light receiving device detects light emitted by the light emitting device and reflected by the object. The light emitted from the light emitting device is reflected in the display device and enters the light receiving device without passing through the object. Such stray light becomes noise during light detection, and the S / N ratio (S This can cause a decrease in the signal-to-noise ratio. By providing a light-shielding layer on the display surface side of the light-receiving device, the effects of stray light can be suppressed. This reduces noise and increases the sensitivity of sensors that use light-receiving devices. Cut.

[0053] The closer the light-shielding layer is to the light-emitting device, the more effectively it can suppress stray light from the light-emitting device in the display device. This increases the sensitivity of the sensor. The higher the angle, the more effectively the contrast and chromaticity are reduced when the display is viewed from an oblique angle. On the other hand, the light-shielding layer can be prevented from blocking light from the light-receiving device, thereby improving the viewing angle characteristics of the display. The farther away the object is, the narrower the area of ​​the image pickup range of the light receiving device can be, and the higher the image resolution. The degree can be increased.

[0054] Therefore, in one aspect of the present invention, the distance from the light-shielding layer to the light-receiving device and the distance from the light-shielding layer to the light-emitting device are A structure (e.g., a resin layer) is placed on the surface where the light-shielding layer is formed so that there is a difference between the distance to the device and the By adjusting the layout and thickness of the structure, the light-shielding layer to the light-receiving device can be This allows the distance from the light-shielding layer to the light-emitting device to be increased and the distance from the light-shielding layer to the light-emitting device to be reduced. This reduces sensor noise, increases image resolution, and reduces viewing angle dependency of the display. Therefore, both the display quality and the image quality of the display device can be improved. can be increased.

[0055] Specifically, the display device according to one embodiment of the present invention further includes a resin layer, a light-shielding layer, and a substrate. It is preferable that the resin layer and the light-shielding layer are each located between the common electrode and the substrate. is preferred.

[0056] At least a part of the light emitted by the light emitting device is extracted to the outside of the substrate through the resin layer. At least a part of the light that has passed through the substrate is incident on the light-receiving device without passing through the resin layer. For example, the resin layer has an opening that overlaps the light-receiving device. It is set up like an island, overlapping with the chair.

[0057] The resin layer is provided at a position overlapping the light-emitting device and not at a position overlapping the light-receiving device. Therefore, the distance from the light-shielding layer to the light-emitting device is This allows for improved image quality and image capture quality in the display device. can be increased.

[0058] 1A to 1D show cross-sectional views of a display device according to one embodiment of the present invention.

[0059] The display device 50A shown in FIG. 1A has a light receiving device between a substrate 51 and a substrate 59. and layer 57 having a light emitting device.

[0060] The display device 50B shown in FIG. 1B has a light receiving device between the substrate 51 and the substrate 59. The layer 53 has a transistor, the layer 55 has a transistor, and the layer 57 has a light emitting device.

[0061] The display device 50A and the display device 50B emit red (R), It is configured to emit green (G) and blue (B) light.

[0062] A display device according to one embodiment of the present invention has a plurality of pixels arranged in a matrix. A pixel has one or more sub-pixels. One sub-pixel has one light-emitting device. For example, For example, a pixel may have three sub-pixels (three colors of R, G, and B, or yellow (Y), cyan (C), and magenta (M), or a structure with four sub-pixels (R, G, , B, and white (W), or four colors (R, G, B, Y, etc.) can be applied. The pixel includes a light-receiving device, and the light-receiving device may be provided in every pixel. It may be provided in some pixels. Also, one pixel may have multiple light receiving devices. That's fine.

[0063] The transistor-containing layer 55 includes a first transistor and a second transistor. Preferably, the first transistor is electrically connected to the light receiving device. The transistor is electrically connected to the light emitting device.

[0064] The display device according to one embodiment of the present invention has a function of detecting an object such as a finger that is in contact with the display device. For example, as shown in FIG. 1(C), in the layer 57 having the light-emitting device, The light emitted by the light emitting device is reflected by the finger 52 in contact with the display device 50B, and is received. The light-receiving device in the layer 53 having the optical device detects the reflected light. It is possible to detect that a finger 52 has come into contact with the display device 50B.

[0065] As shown in FIG. 1(D), the display device according to one embodiment of the present invention is adjacent to the display device 50B. It may also have the ability to detect or capture (non-contact) objects.

[0066] [Pixels] An example of a pixel is shown in FIG. 1(E) to FIG. 1(I).

[0067] The pixel shown in FIG. 1(E) to FIG. 1(G) is made up of three sub-pixels (three light-emitting devices) of R, G, and B. ) and a light receiving device PD. This is an example in which sub-pixels and light receiving devices PD are arranged. In FIG. 1(F), three sub-pixels are arranged in one horizontal row. FIG. 1(G) shows an example in which three sub-pixels and a light receiving device PD are arranged in a horizontal row. In this example, the sub-pixels shown in Figure 1 are arranged, and the light receiving device PD is arranged below them. The pixels shown in Figures 1(E) to 1(G) each consist of three sub-pixels used for display and one sub-pixel used for light detection. It can also be said that it is composed of one sub-pixel and four sub-pixels.

[0068] The pixel shown in FIG. 1(H) consists of four sub-pixels (four light-emitting devices) for R, G, B, and W, and a receiving and an optical device PD.

[0069] The pixel shown in Figure 1(I) consists of three sub-pixels, R, G, and B, and an infrared light-emitting device I. R and a light receiving device PD. At this time, the light receiving device PD detects infrared light. The light receiving device PD preferably has the function of detecting both visible light and infrared light. Depending on the application of the sensor, the wavelength of light detected by the light receiving device PD may be can be determined.

[0070] Hereinafter, a light-emitting device and a display device according to one embodiment of the present invention will be described with reference to FIGS. The detailed configuration of the light receiving device will be described below.

[0071] The display device according to one embodiment of the present invention emits light in a direction opposite to the substrate on which the light-emitting device is formed. top-emission type, which emits light toward the substrate on which the light-emitting device is formed; and bottom-emission type, which emits light toward the substrate on which the light-emitting device is formed. It can be either a one-emission type or a dual-emission type that emits light from both sides. .

[0072] 2 to 12, a top-emission display device will be described as an example.

[0073] In this embodiment, a light emitting device that emits visible light and a light receiving device that detects visible light are mainly used. The present invention describes a display device having a device that emits infrared light. The light receiving device may have a configuration for detecting infrared light, or Alternatively, it may be configured to detect both visible light and infrared light.

[0074] [Display device 10] FIG. 2 shows a cross-sectional view of the display device 10.

[0075] The display device 10 includes a light receiving device 110 and a light emitting device 190 .

[0076] The light-emitting device 190 includes a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, and a buffer layer The light-emitting layer 193 includes an organic compound. The display device 10 further emits infrared light. In this embodiment, the pixel electrode 19 1 functions as an anode and the common electrode 115 functions as a cathode. .

[0077] The light receiving device 110 includes a pixel electrode 181, a buffer layer 182, an active layer 183, and a buffer layer The active layer 183 includes an organic compound. The light receiving device 110 has a function of detecting visible light. In this embodiment, the light emitting device 190 is aligned with the light emitting device 190. In addition, the pixel electrode 181 functions as an anode, and the common electrode 115 functions as a cathode. That is, the light receiving device 110 is disposed between the pixel electrode 181 and the common electrode 115. By applying a reverse bias to the light receiving device 110 and driving it, the display device 10 It detects light, generates an electric charge, and can extract it as a current.

[0078] Pixel electrode 181, pixel electrode 191, buffer layer 182, buffer layer 192, active layer 183 , the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 are respectively The structure may be a single layer or a laminated layer.

[0079] The pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214. The pixel electrode 181 can be formed using the same material and in the same process. The edges of the pixel electrodes 191 and the edges of the pixel electrodes 191 are covered with partition walls 216. The electrode 181 and the pixel electrode 191 are electrically insulated from each other by the partition wall 216 (electrically (also called "separated").

[0080] An organic insulating film is suitable for the partition wall 216. Materials that can be used for the organic insulating film include: Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide resin. Amide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and the resins The partition wall 216 is a layer that transmits visible light. Details will be described later. However, instead of the partition 216, a partition 217 that blocks visible light may be provided.

[0081] The buffer layer 182 is located on the pixel electrode 181. The active layer 183 is located between the buffer layer 182 and the pixel electrode 181. The active layer 183 overlaps with the pixel electrode 181 via a buffer layer 184. The buffer layer 184 is located on the active layer 183. The active layer 183 overlaps the common electrode 115 via the buffer layer 184. The buffer layer 184 may have a hole transport layer. can be done.

[0082] The buffer layer 192 is located on the pixel electrode 191. The light-emitting layer 193 is located between the buffer layer 192 and the pixel electrode 191. The buffer layer 194 is located on the light-emitting layer 193 and overlaps with the pixel electrode 191 via a gap therebetween. The light-emitting layer 193 overlaps the common electrode 115 via a buffer layer 194. 2 may have one or both of a hole injection layer and a hole transport layer. 94 may have one or both of an electron injection layer and an electron transport layer.

[0083] The common electrode 115 is a layer that is used in common for the light receiving device 110 and the light emitting device 190. do.

[0084] The light receiving device 110 and the light emitting device 190 have a pair of electrodes made of the same material and having the same film thickness. This reduces the manufacturing cost of the display device and simplifies the manufacturing process. can.

[0085] The display device 10 includes a pair of substrates (substrate 151 and substrate 152) and a light receiving device 110 between them. It includes a light emitting device 190, a transistor 41, and a transistor 42.

[0086] In the light receiving device 110, the pixel electrodes 181 and the common electrode 115 are located between the pixel electrodes 181 and the common electrode 115. The buffer layer 182, the active layer 183, and the buffer layer 184 are organic layers (containing organic compounds). The pixel electrode 181 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. In the case of a configuration for detecting external light, the common electrode 115 has a function of transmitting infrared light. In addition, it is preferable that the pixel electrode 181 has a function of reflecting infrared light.

[0087] The light receiving device 110 has a function of detecting light. Specifically, the light receiving device 110 A photoelectric conversion device receives light 22 incident from outside the display device 10 and converts it into an electrical signal. The light 22 may be light emitted by the light-emitting device 190 and reflected by an object. Alternatively, the light 22 may be incident on the light receiving device 110 via a lens, which will be described later. .

[0088] In the light-emitting device 190, the pixel electrodes 191 and the common electrode 115 are located between the pixel electrodes 191 and the common electrode 115. The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 are collectively referred to as an EL layer. The EL layer has at least a light-emitting layer. The pixel electrode 191 reflects visible light. The common electrode 115 preferably has a function of transmitting visible light. In addition, when the display device 10 has a configuration including a light emitting device that emits infrared light, the common electrode The pixel electrode 115 has a function of transmitting infrared light. Furthermore, the pixel electrode 191 has a function of reflecting infrared light. It is preferable that the compound has the ability to

[0089] The light-emitting device included in the display device of this embodiment is a micro-optical resonator (microcavity). Therefore, the light-emitting device preferably has a pair of electrodes. One of them has an electrode (semi-transmissive / semi-reflective electrode) that is transparent and reflective to visible light. The other electrode preferably has a reflectivity to visible light (reflective electrode). It is preferable that the light-emitting device has a microcavity structure, and the light-emitting layer can be easily obtained. The emitted light can be resonated between the electrodes, thereby enhancing the light emitted from the light-emitting device.

[0090] The semi-transparent / semi-reflective electrode is a combination of a reflective electrode and an electrode that is transparent to visible light (transparent electrode). In this specification and the like, they are referred to as semi-transparent and semi-reflective, respectively. The reflective electrode, which functions as a part of the reflective electrode, is referred to as a pixel electrode or a common electrode, and the transparent electrode is referred to as a light Although it is sometimes written as an optical adjustment layer, the transparent electrode (optical adjustment layer) can also be used as a pixel electrode or a common electrode. It can be said that it has all the functions.

[0091] The light transmittance of the transparent electrode is 40% or more. For example, in a light-emitting device, visible light (wavelength It is preferable to use an electrode having a transmittance of 40% or more for light having a wavelength of 400 nm or more and less than 750 nm. The reflectance of the semi-transmissive / semi-reflective electrode for visible light is preferably 10% or more and 95% or less. The reflectance of the reflective electrode for visible light is 40% or more and 100% or less. The resistivity of these electrodes is 1×1 0 -2 It is preferable that the resistance is Ωcm or less. When these electrodes are used, the transmittance of near-infrared light (light with wavelengths of 750 nm or more and 1300 nm or less) It is preferable that the reflectance is also within the above range.

[0092] The buffer layer 192 or the buffer layer 194 may function as an optical adjustment layer. By making the thickness of the buffer layer 192 or the buffer layer 194 different, In this case, it is possible to enhance and extract light of a specific color. In the case of a laminated structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes is the distance between the pair of reflective electrodes. Indicates the optical distance between the poles.

[0093] The light-emitting device 190 has a function of emitting visible light. By applying a voltage between the pixel electrode 191 and the common electrode 115, light is emitted to the substrate 152 side. It is an electroluminescent device that emits light (see Emission 21).

[0094] The light-emitting layer 193 is preferably formed so as not to overlap the light-receiving device 110. This can prevent the light emitting layer 193 from absorbing the light 22, and the light 22 can be irradiated onto the light receiving device 110. The amount of light emitted can be increased.

[0095] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. It is electrically connected to the source or drain.

[0096] The pixel electrode 191 is connected to the transistor 42 through an opening provided in the insulating layer 214. The transistor 42 is electrically connected to the source or drain of the light-emitting device 190. It has the function of controlling the drive of the

[0097] The transistor 41 and the transistor 42 are in contact with each other on the same layer (substrate 151 in FIG. 2). There are.

[0098] At least a part of the circuit electrically connected to the light receiving device 110 is connected to the light emitting device 190. It is preferable that the circuit be formed from the same material and in the same process as the circuit to which it is electrically connected. This makes it possible to reduce the thickness of the display device compared to when the two circuits are formed separately. Furthermore, the manufacturing process can be simplified.

[0099] The light receiving device 110 and the light emitting device 190 are each covered with a protective layer 116. In FIG. 2, the protective layer 116 is provided on and in contact with the common electrode 115. By providing the protective layer 116, the light-receiving device 110 and the light-emitting device 190 are protected from water and other imperfections. The intrusion of impurities is suppressed, and the reliability of the light receiving device 110 and the light emitting device 190 is improved. In addition, the adhesive layer 142 adheres the protective layer 116 to the substrate 152. They are combined.

[0100] A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. The light-shielding layer 158 is The light-emitting device 190 and the light-receiving device 110 have openings at positions overlapping each other. In this specification and the like, the position overlapping with the light-emitting device 190 specifically means the position It refers to the position overlapping with the light-emitting region of the optical device 190. Similarly, it refers to the position overlapping with the light-receiving device 110. Specifically, the position refers to a position that overlaps with the light receiving region of the light receiving device 110.

[0101] Here, the light emitted by the light emitting device 190 is reflected by the object and received by the light receiving device 110. However, the light emitted from the light emitting device 190 is reflected within the display device 10 and is detected by the object. The light may be incident on the light receiving device 110 without passing through the light shielding layer 158. For example, if the light-shielding layer 158 is not provided, the influence of stray light can be suppressed. In this case, light 23 emitted by the light-emitting device 190 is reflected by the substrate 152, and the reflected light 24 is incident on the light-receiving device 190. By providing the light-shielding layer 158, the reflected light 24 can be prevented from entering the light-receiving device 110. This can reduce noise and prevent light from entering the light receiving device 110. The sensitivity of the sensor using 110 can be increased.

[0102] The light-shielding layer 158 may be made of a material that blocks light emitted from the light-emitting device. The light-shielding layer 158 preferably absorbs visible light. For example, a metal material can be used as the light-shielding layer 158. Or, black using a resin material containing a pigment (carbon black, etc.) or a dye. The light-shielding layer 158 can be formed as a matrix. The color filter may have a laminated structure of a white filter and a blue color filter.

[0103] [Display device 10A] FIG. 3A shows a cross-sectional view of the display device 10A. The description of the same configuration as the display device described above may be omitted.

[0104] The display device 10A differs from the display device 10 in that it has a resin layer 159.

[0105] The resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The optical device 190 is provided at a position overlapping the light receiving device 110. I can't.

[0106] The resin layer 159 is formed at a position overlapping the light emitting device 190 as shown in FIG. 3(B). The light receiving device 110 is provided with an opening 159p at a position overlapping the light receiving device 110. Alternatively, the resin layer 159 may be formed on the light-emitting device as shown in FIG. 190 and is provided in an island shape at a position overlapping with the light receiving device 110. It is possible to configure it so that it is not possible to

[0107] A light-shielding layer 158 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided at a position where it overlaps the light-emitting device 190 and at a position where it overlaps the light-receiving device 190. It has an opening at the position where it overlaps with the chair 110.

[0108] For example, the light blocking layer 158 passes through the resin layer 159 and is reflected by the surface of the substrate 152 on the substrate 151 side. The light blocking layer 158 can absorb the stray light 23a before it reaches the resin layer 159. This allows the stray light 23b to be absorbed. Therefore, noise can be reduced, and the sensor using the light receiving device 110 can be In particular, the light-shielding layer 158 is positioned close to the light-emitting device 190. In addition, the light-shielding layer 158 is preferably in the range of 150 to 1500 nm, since this can further reduce stray light. If it is located close to 0, the viewing angle dependency of the display can be suppressed, from the viewpoint of improving the display quality. It is also preferred from the

[0109] Furthermore, by providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light can be controlled. When the light-shielding layer 158 is located at a position away from the light-receiving device 110, the imaging range is This narrows the aperture, allowing for increased imaging resolution.

[0110] When the resin layer 159 has an opening, the light-shielding layer 158 covers at least a part of the opening and the It is preferable to cover at least a part of the side surface of the resin layer 159 exposed in the opening.

[0111] When the resin layer 159 is provided in an island shape, the light-shielding layer 158 is formed on at least a portion of the side surface of the resin layer 159. It is preferable that the surface of the substrate be at least partially covered.

[0112] In this way, the light-shielding layer 158 is provided along the shape of the resin layer 159, so that the light-shielding layer 158 to the light-emitting device 190 (specifically, the light-emitting region of the light-emitting device 190) is From the light-shielding layer 158 to the light-receiving device 110 (specifically, the light-receiving region of the light-receiving device 110) This allows for a reduction in sensor noise while increasing the image resolution. Therefore, the display device can be improved in terms of the viewing angle dependency of the display. This can improve both the display quality and the image quality.

[0113] The resin layer 159 is a layer that transmits light emitted from the light emitting device 190. The material of the resin layer 159 is Examples include acrylic resin, polyimide resin, epoxy resin, polyamide resin, and polyimide resin. Amide resin, siloxane resin, benzocyclobutene resin, phenolic resin, and the resins The structure provided between the substrate 152 and the light-shielding layer 158 is The thickness of the structure is not limited to a resin layer, and an inorganic insulating film or the like may be used. There is a difference between the distance from the optical layer to the light receiving device and the distance from the light blocking layer to the light emitting device. Since organic insulating films such as resins can be easily formed thick, they are suitable for the structure. is.

[0114] The distance from the light-shielding layer 158 to the light-receiving device 110 and the distance from the light-shielding layer 158 to the light-emitting device 19 0, for example, the end of the light-shielding layer 158 on the light-receiving device 110 side. the shortest distance L1 from the end of the light-shielding layer 158 to the common electrode 115 and the end of the light-shielding layer 158 on the light-emitting device 190 side The shortest distance L2 from the portion to the common electrode 115 can be used. In all cases, the shortest distance L2 is short, which suppresses stray light from the light-emitting device 190 and The sensitivity of the sensor using the sensor 110 can be improved. Also, the viewing angle dependency of the display can be suppressed. Since the shortest distance L1 is longer than the shortest distance L2, the light receiving device 1 The imaging range of the image sensor 10 can be narrowed, and the imaging resolution can be increased.

[0115] In addition, the adhesive layer 142 has a thickness smaller than that of the light-receiving device 190, compared to the portion overlapping the light-emitting device 190. By configuring the portion overlapping with 110 to be thick, the distance from the light-shielding layer 158 to the light-receiving device 110 can be reduced. and the distance from the light-shielding layer 158 to the light-emitting device 190. can be done.

[0116] [Display device 10B] FIG. 4A shows a cross-sectional view of the display device 10B.

[0117] The display device 10B does not have the buffer layer 182 and the buffer layer 192, but has the common layer 112. In this respect, the display device 10 differs from the display device 10A.

[0118] The common layer 112 is located on the partition wall 216 , the pixel electrode 181 , and the pixel electrode 191 . The common layer 112 is a layer that is used in common by the light-receiving device 110 and the light-emitting device 190. The common layer 112 may have a single layer structure or a multilayer structure.

[0119] The common layer 112 may be, for example, a hole injection layer or a hole transport layer. The common layer 112 can be used to separate the functions of the light-emitting device 190 and the light-receiving device 110. For example, when the common layer 112 has a hole injection layer, The hole injection layer functions as a hole injection layer in the light-emitting device 190 and as a hole injection layer in the light-receiving device At 110 it functions as a hole transport layer.

[0120] At least some of the layers other than the active layer and the light-emitting layer are alternately formed between the light-receiving device and the light-emitting device. By using a common structure for all the display devices, the number of manufacturing steps of the display device can be reduced, which is preferable.

[0121] [Display device 10C] FIG. 4B shows a cross-sectional view of the display device 10C.

[0122] The display device 10C does not have the buffer layer 184 and the buffer layer 194, but has the common layer 114. In this respect, the display device 10 differs from the display device 10A.

[0123] The common layer 114 is located on the partition wall 216, the active layer 183, and the light-emitting layer 193. The layer 114 is a layer that is commonly used in the light receiving device 110 and the light emitting device 190 . The common layer 114 may have a single layer structure or a laminated structure.

[0124] The common layer 114 may be, for example, an electron injection layer or an electron transport layer. The common layer 114 can be used to provide functions in the light-emitting device 190 and the light-receiving device 110. For example, when the common layer 114 has an electron injection layer, The electron injection layer functions as an electron injection layer in the light-emitting device 190 and as an electron injection layer in the light-receiving device 110 functions as an electron transport layer.

[0125] At least some of the layers other than the active layer and the light-emitting layer are alternately formed between the light-receiving device and the light-emitting device. By using a common structure for all the display devices, the number of manufacturing steps of the display device can be reduced, which is preferable.

[0126] [Display device 10D] FIG. 5A shows a cross-sectional view of the display device 10D.

[0127] The display device 10D includes a buffer layer 182, a buffer layer 192, a buffer layer 184, and a buffer layer 196. The display device 10A is different from the display device 10A in that it does not have the layer 194 but has the common layer 112 and the common layer 114. different.

[0128] In the display device of this embodiment, an organic compound is used for the active layer 183 of the light receiving device 110. The light-receiving device 110 is configured such that the layers other than the active layer 183 are the same as the light-emitting device 190 (EL device ) can be made to have a common structure with the active layer. By simply adding a step of depositing the layer 183, the light-receiving device can be formed in parallel with the formation of the light-emitting device 190. The light-emitting device 190 and the light-receiving device 110 can also be formed. Therefore, the number of manufacturing steps can be reduced significantly. The light receiving device 110 can be built into the display device.

[0129] In the display device 10D, the active layer 183 of the light-receiving device 110 and the light-emitting layer 190 of the light-emitting device 190 are The light receiving device 110 and the light emitting device 190 have the same structure except for the layer 193. However, the configuration of the light receiving device 110 and the light emitting device 190 is not limited to this. The light receiving device 110 and the light emitting device 190 are formed by an active layer 183 and a light emitting layer 193. In addition, the display device 10A, 10B, and the display device 20A may have layers that are made separately. 10C). The light receiving device 110 and the light emitting device 190 share a common layer (see common layer). It is preferable that the film has one or more layers. This allows the number of manufacturing steps to be reduced significantly. The light receiving device 110 can be built into the display device.

[0130] [Display device 10E] FIG. 5B shows a cross-sectional view of the display device 10E.

[0131] The display device 10E does not have the substrate 151 and the substrate 152, but has the substrate 153, the substrate 154, and the adhesive The display device 10 differs from the display device 10D in that it has a layer 155 and an insulating layer 212.

[0132] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The protective layer 116 is bonded to the protective layer 116 by an adhesive layer 142 .

[0133] The display device 10E includes an insulating layer 212, a transistor 41, and a transistor The star 42, the light receiving device 110, the light emitting device 190, etc. are transposed onto the substrate 153. The substrate 153 and the substrate 154 are each flexible. This makes it possible to improve the flexibility of the display device 10E. For example, It is preferable that the substrates 153 and 154 are each made of a resin.

[0134] The substrates 153 and 154 are made of polyethylene terephthalate (PET). Polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile resins Oil, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, ara) amide, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, poly Propylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose Nanofibers or the like can be used. Alternatively, glass having a thickness sufficient to provide flexibility may be used.

[0135] A film with high optical isotropy may be used for a substrate included in the display device of this embodiment mode. Triacetyl cellulose (TAC, cellulose triacetate) is an example of a film with high optical isotropy. acetate film, cycloolefin polymer (COP) film, cyclo Examples include olefin copolymer (COC) films and acrylic films.

[0136] [Display device 10F, 10G, 10H] FIG. 5C shows a cross-sectional view of the display device 10F. FIG. 6A shows a cross-sectional view of the display device 10G. FIG. 6B shows a cross-sectional view of the display device 10H.

[0137] The display device 10F includes a lens 149 in addition to the configuration of the display device 10D.

[0138] The display device of this embodiment may have a lens 149. The lens 149 is a light receiving device. In the display device 10F, the lens 149 is disposed at a position overlapping the vice 110. The lens 149 of the display device 10F is provided on the substrate 151 side. has a convex surface.

[0139] When both the light-shielding layer 158 and the lens 149 are formed on the same surface of the substrate 152, the order of formation is as follows: Although FIG. 5C shows an example in which the lens 149 is formed first, it is also possible to form the light-shielding layer 158 first. In FIG. 5C, the edge of the lens 149 is covered with a light-shielding layer 158. are.

[0140] The display device 10F is configured such that light 22 enters the light receiving device 110 via a lens 149. When the lens 149 is provided, the light receiving device 1 is more reflective than when the lens 149 is not provided. The imaging range of the light receiving device 10 can be narrowed, and the imaging range of the light receiving device 110 overlaps with that of the adjacent light receiving device 110. This allows for capturing clear images with less blur. If the imaging range of the device 110 is the same, the imaging range with the lens 149 is different from the imaging range without the lens 149. In comparison with the case where the pinhole is not formed, the size of the pinhole (in FIG. 5C, the pinhole overlaps with the light-receiving device 110 and is therefore light-shielding) The size of the aperture in the layer 158 can be increased. By providing the light receiving device 110 with the light receiving element 49, the amount of light incident on the light receiving device 110 can be increased.

[0141] In the display device 10G shown in FIG. 6A, similarly to the display device 10F, the light 22 passes through the lens 149. This is one of the configurations in which light is incident on the light receiving device 110 via a filter.

[0142] In the display device 10G, a lens 149 is provided in contact with the upper surface of the protective layer 116. The lens 149 of the device 10G has a convex surface facing the substrate 152 side.

[0143] In the display device 10H shown in FIG. 6(B), a lens array 146 is provided on the display surface side of the substrate 152. The lenses of the lens array 146 are arranged at positions overlapping the light receiving device 110. A light-shielding layer 158 is provided on the surface of the substrate 152 facing the substrate 151. It is preferable.

[0144] The method for forming the lenses used in the display device of this embodiment is to form the lenses on the substrate or the light receiving device. A lens such as a microlens may be formed directly on the substrate, or a separately manufactured microlens may be formed on the substrate. A lens array such as a lens array may be attached to the substrate.

[0145] The lens preferably has a refractive index of 1.3 or more and 2.5 or less. For example, the insulating layer 10 can be formed using a material containing a resin. The material containing at least one of oxide and sulfide can be used for the lens. It can be used in lenses.

[0146] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, and resins containing aromatic rings Resins containing sulfur or sulfur can be used for the lenses. Materials containing nanoparticles of materials with higher refractive indexes can be used for lenses. Alternatively, zirconium oxide or the like can be used for the nanoparticles.

[0147] Also, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, Tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin or oxides containing indium, gallium, and zinc can be used for the lenses. Alternatively, zinc sulfide or the like can be used for the lens.

[0148] [Display device 10J] FIG. 6C shows a cross-sectional view of the display device 10J.

[0149] The display device 10J does not have the partition wall 216 that transmits visible light, but has the partition wall 217 that blocks visible light. The display device 10B differs from the display device 10D in that:

[0150] The partition wall 217 preferably absorbs the light emitted by the light-emitting device 190. For example, a black matrix is ​​formed using a resin material containing a pigment or a dye. In addition, by using a brown resist material, the partition wall 21 can be formed with a colored insulating layer. 7 can be configured.

[0151] In the display device 10D (FIG. 5A), light emitted from the light-emitting device 190 is reflected by the substrate 152. The light may be reflected by the partition wall 216 and enter the light receiving device 110. Light emitted from the light-emitting device 190 passes through the partition wall 216 and is reflected by the transistor, wiring, etc. As a result, reflected light may be incident on the light receiving device 110. The light is absorbed by the partition wall 217, and the reflected light is not reflected by the light receiving device 110. This reduces noise and allows the light receiving device 110 to be used The sensitivity of the sensor can be increased.

[0152] The partition 217 preferably absorbs at least the wavelength of light detected by the light receiving device 110. For example, when the light-emitting device 190 emits green light and the light-receiving device 110 detects the green light, In this case, it is preferable that the partition 217 absorbs at least green light. 7, but with a red color filter, it can absorb green light and receive reflected light. This can prevent light from entering the device 110.

[0153] The light-shielding layer 158 can absorb most of the stray light 23b before it reaches the resin layer 159. A part of the stray light 23b may be reflected and enter the partition wall 217. If the structure is such that the stray light 23b is absorbed, it is possible to prevent the stray light 23b from being incident on the transistor, wiring, etc. Therefore, it is possible to prevent the stray light 23c from reaching the light receiving device 110. The more times the stray light 23b hits the light blocking layer 158 and the partition wall 217, the greater the amount of light that is absorbed. can be increased, and the amount of stray light 23c reaching the light receiving device 110 can be significantly reduced. If the resin layer 159 is thick, the stray light 23b may be blocked by the light blocking layer 158 and the partition wall 217. This is preferable because it increases the number of times you can win.

[0154] Furthermore, the partition wall 217 absorbs light, and the light directly enters the partition wall 217 from the light-emitting device 190. The stray light 23d incident thereon can be absorbed by the partition wall 217. By providing the wall 217, stray light incident on the light receiving device 110 can be reduced.

[0155] [Display device 10K] 7A shows a top view of the display device 10K. 8A shows a cross-sectional view taken along the dashed line A1-A2 in FIG. A cross-sectional view of the section 4 is shown.

[0156] In FIG. 7A, the area enclosed by the dotted line frame corresponds to one pixel. device 110, red light-emitting device 190R, green light-emitting device 190G, and blue The color light emitting device 190B.

[0157] There are no particular restrictions on the top surface shapes of the light receiving device 110 and the light emitting devices 190R, 190G, and 190B. The pixel layout shown in FIG. 7(A) is a hexagonal close-packed type. By adopting a hexagonal close-packed layout, the light-receiving device 110 and the light-emitting device 19 This is preferable because it can increase the aperture ratio of 0R, 190G, and 190. The light-receiving area of ​​device 110 is rectangular, and light-emitting devices 190R, 190G, and 190B The light-emitting regions of each are hexagonal.

[0158] In a top view (or a plan view), the light receiving device 110 has a frame-shaped light blocking layer 219a. The light-receiving device 110 is completely surrounded by the light-shielding layer 219a. This can prevent stray light from entering the light receiving device 110. may have gaps (also called gaps, broken parts, or missing parts) .

[0159] When viewed from above, there is a gap between the green light-emitting device 190G and the blue light-emitting device 190B. , a spacer 219b is provided.

[0160] As shown in FIG. 7B and FIG. 8A, the display device 10K includes a light receiving device 110, a red a green light-emitting device 190R, a green light-emitting device 190G, and a blue light-emitting device 19 It has 0B.

[0161] The light-emitting device 190R includes a pixel electrode 191R, a common layer 112, a light-emitting layer 193R, and a common layer 194R. The light-emitting layer 193R has an organic compound that emits red light 21R. The light-emitting device 190R has a function of emitting red light.

[0162] The light-emitting device 190G includes a pixel electrode 191G, a common layer 112, a light-emitting layer 193G, and a common layer 113G. 14, and a common electrode 115. The light-emitting layer 193G is an organic compound that emits green light 21G. The light emitting device 190G has a function of emitting green light.

[0163] The light-emitting device 190B includes a pixel electrode 191B, a common layer 112, a light-emitting layer 193B, and a common layer 194B. 14, and a common electrode 115. The light-emitting layer 193B is an organic compound that emits blue light 21B. The light emitting device 190B has a function of emitting blue light.

[0164] The light receiving device 110 includes a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115. The active layer 183 includes an organic compound. 0 has the function of detecting visible light.

[0165] The display device 10K includes a pair of substrates (substrate 151 and substrate 152) and a light receiving device 110 disposed between the substrates. , light emitting device 190R, light emitting device 190G, light emitting device 190B, transistor 41, a transistor 42R, a transistor 42G, and a transistor 42B.

[0166] The ends of the pixel electrodes 181, 191R, 191G, and 191B are separated by the partition walls 216. It is covered with

[0167] The pixel electrode 181 is connected to the transistor 41 through an opening provided in the insulating layer 214. The pixel electrode 191R is provided on the insulating layer 214 and is electrically connected to the source or drain. The source or drain of the transistor 42R is electrically connected through the opening. Similarly, the pixel electrode 191G is connected to the transistor through an opening provided in the insulating layer 214. The pixel electrode 1 is electrically connected to the source or drain of the transistor 42G. 91B is connected to the source of the transistor 42B through an opening in the insulating layer 214. Or, it is electrically connected to the drain.

[0168] The light receiving device 110 and the light emitting devices 190R, 190G, and 190B are each It is covered with layer 116.

[0169] A resin layer 159 is provided on the surface of the substrate 152 facing the substrate 151. The resin layer 159 is The light receiving device 11 is provided at a position overlapping the light emitting devices 190R, 190G, and 190B. It cannot be set at a position that overlaps with 0.

[0170] A light-shielding layer 158 is formed on the surface of the substrate 152 facing the substrate 151 and on the surface of the resin layer 159 facing the substrate 151. The light-shielding layer 158 is provided to shield the light-emitting devices 190R, 190G, and 190B. The light receiving device 110 has openings at positions where the light receiving device 110 overlaps the light receiving device 110 and the light receiving device 110 overlaps the light receiving device 110 .

[0171] In top view, the partition wall 216 has a frame-shaped opening. 216 has an opening between the light receiving device 110 and the light emitting device 190R. The light-shielding layer 219a is provided to cover the opening. It is preferable that the light-shielding layer 219 covers the opening and the side surface of the partition wall 216 exposed at the opening. Preferably, a also covers at least a part of the upper surface of the partition wall 216 .

[0172] Alternatively, the partition wall 216 may not have an opening, and the light-shielding layer 219a may be provided on the partition wall 216. However, there is a possibility that stray light may pass through the partition 216 and enter the light-receiving device 110. 216, and a light-shielding layer 219a is provided to fill the opening. Stray light transmitted through the partition wall 216 is absorbed by the light-shielding layer 219a at the opening of the partition wall 216. This can prevent stray light from entering the light receiving device 110.

[0173] The light-shielding layer 219a preferably has a forward tapered shape. The films (common layer 112, common layer 114, common electrode 115, protective layer 116, etc.) provided on the ) can be improved in coverage.

[0174] The light-shielding layer 219a absorbs at least the wavelength of light detected by the light-receiving device 110. For example, it is preferable that the light receiving device 110 detects green light emitted by the light emitting device 190G. In this case, it is preferable that the light-shielding layer 219a absorbs at least green light. If the light-shielding layer 219a has a red color filter, it can absorb green light. This can prevent reflected light from entering the light receiving device 110. The light blocking layer 219a also contains pigment. Alternatively, it may be a black matrix formed using a resin material containing a dye. The optical layer 219a includes a red color filter, a green color filter, and a blue color filter. Alternatively, the light-shielding layer 219a may be made of a brown resist material. A colored insulating layer may be formed by the above method.

[0175] For example, when the light receiving device 110 detects green light emitted by the light emitting device 190G, The light emitted by the light emitting device 190G is reflected by the substrate 152 and the partition wall 216. The light emitted by the light-emitting device 190G may be incident on the optical device 110. The reflected light is transmitted through the light receiving device 216 and reflected by a transistor or wiring. In the display device 10K, the light may be incident on the light-shielding layer 158 and the light-shielding layer 219a. Therefore, the light is absorbed, and the reflected light is prevented from entering the light receiving device 110. This reduces noise and improves the sensitivity of the sensor using the light receiving device 110. It can be increased.

[0176] For example, the light blocking layer 158 can absorb most of the stray light 23b before it reaches the resin layer 159. Furthermore, even if a part of the stray light 23b is reflected by the light-shielding layer 158, the light-shielding layer 219a can By absorbing the stray light 23b, it is possible to prevent the stray light 23b from being incident on the transistor, wiring, etc. Therefore, it is possible to prevent the stray light from reaching the light receiving device 110. The more times the light hits the light-shielding layer 158 and the light-shielding layer 219a, the more the amount of light absorbed. This allows the amount of stray light reaching the light receiving device 110 to be extremely reduced. If the thickness of 159 is large, the number of times that stray light 23b hits light blocking layer 158 and light blocking layer 219a increases. If the resin layer 159 is thick, the light of each color can be easily transmitted from the light blocking layer 158. The distance to the light-emitting device is shortened, suppressing the viewing angle dependency of the display, and improving the display quality. This is also preferable from the viewpoint of improvement.

[0177] Furthermore, the light-shielding layer 219a absorbs light, so that light from the light-emitting device is directly transmitted to the light-shielding layer 219a. The incident stray light 23d can be absorbed by the light blocking layer 219a. In addition, by providing the light-shielding layer 219a, stray light incident on the light-receiving device 110 can be reduced. can be done.

[0178] Furthermore, by providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light can be controlled. If the distance from the light-shielding layer 158 to the light-receiving device 110 is long, the imaging range becomes narrow. This allows for an increase in the imaging resolution.

[0179] The spacer 219b is located on the partition wall 216 and is spaced apart from the light emitting device 19 in top view. The spacer 219b is located between the light-shielding layer 210G and the light-emitting device 190B. It is preferable that the thickness L3 of the light-shielding layer 219a is closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. If the sum L4 of the thickness of the wall 216 and the thickness of the spacer 219b is equal to or greater than the sum L4, the frame-shaped light-shielding layer 21 The adhesive layer 142 is not sufficiently filled inside the 9a, and the light receiving device 110 and further the display device Therefore, the thickness of the partition wall 216 and the spacer 21 The sum L4 of the thicknesses of the light-shielding layer 219a and the light-shielding layer 219b is preferably greater than the thickness L3 of the light-shielding layer 219a. This makes it easier to fill the adhesive layer 142. As shown in FIG. In the area where 19b and the light-shielding layer 158 overlap, the light-shielding layer 158 is in contact with the protective layer 116 (or It may be in contact with the conducting electrode 115).

[0180] [Display device 10L] FIG. 8B shows a cross-sectional view of the display device 10L.

[0181] The display device 10L has light-emitting devices 190R, 190G, and 190B each having the same light-emitting layer. FIG. 8(B) corresponds to a cross-sectional view taken along the dashed line A3-A4 in FIG. 7(A). do.

[0182] The light-emitting device 190G shown in FIG. 8(B) includes a pixel electrode 191G, an optical adjustment layer 197G, a common ... The light-transmitting layer 112, the light-emitting layer 113, the common layer 114, and the common electrode 115 are included. The light-emitting device 190B shown includes a pixel electrode 191B, an optical adjustment layer 197B, a common layer 112, The light-emitting layer 113, the common layer 114, and the common electrode 115 are included. 3 and common layer 114 are common to light-emitting devices 190R, 190G, and 190B. For example, the light-emitting layer 113 includes a light-emitting layer 193R that emits red light, a light-emitting layer 193B that emits green light, and a light-emitting layer 193C that emits red light. The light emitting layer 193B has a light emitting layer 193G that emits blue light and a light emitting layer 193B that emits blue light.

[0183] In FIG. 8B, the EL layer is represented by a common layer 112, a light-emitting layer 113, and a common layer 114. The light-emitting device may have one EL layer between a pixel electrode and a common electrode, but is not limited to this. It may be a single structure (FIG. 18(A)) having a plurality of EL layers, or a tandem structure having a plurality of EL layers. The structure (FIG. 18(B)) may also be used.

[0184] The light-emitting layer 113 is provided in common to the light-emitting devices that emit light of each color. The light emitted by 90G passes through the colored layer CFG and is extracted as green light 21G. The light emitted by device 190B is extracted as blue light 21B via colored layer CFB. can be.

[0185] The light-emitting device 190G and the light-emitting device 190B have optical adjustment layers with different thicknesses. The pixel electrodes 191G and 191B are made of reflective electrodes. A transparent electrode on a reflective electrode can be used as the optical adjustment layer. The devices preferably have optical adjustment layers 197 of different thicknesses. The light-emitting device 190G shown in FIG. 1 has an optical distance between the pixel electrode 191G and the common electrode 115. The optical adjustment layer 197G is used to adjust the optical distance so as to enhance the green light. Similarly, the light-emitting device 190B has an optical distance between the pixel electrode 191B and the common electrode 115. The optical adjustment layer 197B is used to adjust the optical distance so that the blue light is strengthened. are.

[0186] [Display device 10M] 9A shows a top view of the display device 10M. A cross-sectional view between the chain lines A5 and A6 is shown.

[0187] The display device 10M shown in FIGS. 9A and 9B includes a green light-emitting device 190G and a blue light-emitting device 190G. The light-shielding layer 219a is provided between the light-emitting device 190B and the space 14. 7(A) and 7(B) in that a hollow sealing structure is applied in which the cavity 3 is filled with an inert gas. 8B) and the display device 10K shown in FIG. 8A.

[0188] As in the display device 10M, the light-shielding layer 219a is formed between the light-emitting device 190R and the light-receiving device 11. 0 and between light emitting device 190G and light emitting device 190B. good.

[0189] [Display device 10N] FIG. 10(A) shows a top view of the display device 10N. FIG. 10(B) shows the display device 10N shown in FIG. 11(A) shows a cross-sectional view of the dashed line A7-A8 in FIG. A cross-sectional view between lines A9-A10 is shown.

[0190] The cross-sectional structure of the display device 10N (FIG. 10A) taken along the dashed line A3-A4 is 10K (FIG. 8(A)) can be applied. Alternatively, the display device 10M (FIG. 9(B)) can be applied. ) may be applied.

[0191] The display device 10N has a light-shielding layer 219a having a top surface shape and a cross-sectional shape similar to those of the display device 10K (FIG. 7( 7(A) and 7(B).

[0192] In a top view (also referred to as a plan view), the light-shielding layer 219a is The light-shielding layer 219a has a gap 220( The gap, break, or missing part is a red light-emitting device 190 The light source used for sensing is a light-emitting device of a specific color. In this case, a light-shielding layer 21 is provided on the side of a light-emitting device different from the light-emitting device used for the sensing. For example, in the case of the display device 10N, the gap 220 of the green A sensing structure using the light emitting device 190G or the blue light emitting device 190B. This configuration is preferable. This makes it possible to suppress the influence of noise during sensing. When sensing is performed using the green light-emitting device 190G, as shown in region 230, , one end of the light-shielding layer 219a is closer to the red light-emitting device 190G than the green light-emitting device 190G. It is preferable that the green light emitting device 190G protrudes toward the 190R side. This can prevent stray light from entering the light receiving device 110 through the gap 220.

[0193] The partition wall 216 has an opening between the light receiving device 110 and the light emitting device 190R. A light-shielding layer 219a is provided to cover the opening. It is preferable that the light-shielding layer 2 covers the openings of the partition walls 216 and the side surfaces of the partition walls 216 exposed at the openings. Preferably, 19 a also covers at least a portion of the upper surface of the partition wall 216 .

[0194] The light-shielding layer 219a may have an inverse tapered shape. The thickness of the organic film and the common electrode 115 to be shielded is thinner near the side of the light-shielding layer 219a. Furthermore, voids 160 may occur near the side surfaces of the light-shielding layer 219a.

[0195] Here, when viewed from above, the light-shielding layer 219a surrounds all four sides of the light-receiving device 110. When the light blocking layer 219a is turned on, the common electrode 115 is cut off by the light blocking layer 219a, and the inside and outside of the light blocking layer 219a are separated. Therefore, the common electrode 115 may be separated from the light-shielding layer 219a. The shape of the light receiving device 110 is such that it surrounds all four sides of the device and one end is spaced from the other end. By providing the common electrode 115 with the pixel electrode 220, the common electrode 115 can be prevented from being separated. This can prevent display defects in the device 10N.

[0196] FIG. 11(A) is a cross-sectional view of the light-shielding layer 219a including the gap 220. The wall 216 surrounds the four sides of the light-receiving device 110, similar to the shape of the upper surface of the light-shielding layer 219a. In addition, an opening is provided with one end and the other end spaced apart from each other. In the gap 220, the common layer 112, the common layer 114, the common electrode 115, and the protective layer 116 are disposed on the partition wall 216. A protective layer 116 is in turn provided.

[0197] [Display device 10P] FIG. 11B shows a cross-sectional view of the display device 10P.

[0198] The display device 10P has a side wall 219c that contacts the side surface of the light-shielding layer 219a. Different from 10N.

[0199] In the display device 10P, the upper surface of the light-shielding layer 219a has a frame shape as shown in FIG. 7(A). Alternatively, as shown in FIG. 10(A), a gap 220 may be provided.

[0200] By providing a side wall 219c that contacts the side surface of the inversely tapered light-shielding layer 219a, the organic film and The coverage of the common electrode 115 and the like can be improved, and the display quality of the display device can be improved. By increasing the coverage of the common electrode 115, it is possible to prevent the common electrode 115 from being broken or thinned. Since film formation can be suppressed, uneven brightness of the display caused by a voltage drop in the common electrode 115 can be suppressed. It is possible.

[0201] The side wall 219c can be formed using the material that can be used for the partition wall 216.

[0202] [Display device 10Q] 12(A) and 12(B) are cross-sectional views of the display device 10Q. The same top surface structure as that of the display device 10K (FIG. 7A) can be applied. 12(B) shows a cross-sectional view taken along the dashed line A1-A2 in FIG. 7(A). A cross-sectional view taken along the dashed dotted line A3-A4 in FIG.

[0203] The display device 10Q differs from the display device 10K in that it does not have the partition wall 216 but has the partition wall 217. varies.

[0204] The light-shielding layer 219a is located on the partition wall 217. Unlike the partition wall 216, the partition wall 217 has a light-emitting Since the light emitted by the optical device can be absorbed, there is no need to provide an opening in the partition wall 217. Stray light 23d incident on the partition wall 217 from the light emitting device is absorbed by the partition wall 217. Stray light 23d incident on the light-shielding layer 219a from the optical device is absorbed by the light-shielding layer 219a. .

[0205] Spacer 219b is located between light emitting device 190G and light emitting device 190B. The upper surface of the spacer 219b is preferably closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. If the thickness of the spacer 219b is thinner than the thickness of the light-shielding layer 219a, the frame-shaped light-shielding layer 21 The adhesive layer 142 is not sufficiently filled inside the 9a, and the light receiving device 110 and further the display device Therefore, the spacer 219b is not provided on the light-shielding layer 21. It is preferable that the thickness is greater than 9a, which makes it easier to fill the adhesive layer 142. As shown in FIG. 12(B), in the area where the spacer 219b and the light-shielding layer 158 overlap, The light-shielding layer 158 may be in contact with the protective layer 116 (or the common electrode 115).

[0206] Hereinafter, a more detailed configuration of a display device according to one embodiment of the present invention will be described with reference to FIGS. 13 to 17. and explain.

[0207] [Display device 100A] FIG. 13 shows a perspective view of the display device 100A, and FIG. 14 shows a cross-sectional view of the display device 100A. vinegar.

[0208] The display device 100A has a configuration in which a substrate 152 and a substrate 151 are bonded together. , the substrate 152 is clearly shown by the dashed line.

[0209] The display device 100A includes a display unit 162, a circuit 164, wiring 165, etc. 1 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on a display device 100A. Therefore, the configuration shown in FIG. 13 is a display device having a display device 100A, an IC, and an FPC. It can also be called a display module.

[0210] The circuit 164 can be, for example, a scanning line driver circuit.

[0211] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are transmitted from the outside via the FPC 172 or from the IC 173 to the wiring 165. is entered.

[0212] In Figure 13, the COG (Chip On Glass) method or the COF (Chip On 1 shows an example in which an IC 173 is provided on a substrate 151 by a film method or the like. 73 can be an IC having a scanning line driving circuit or a signal line driving circuit, for example. The display device 100A and the display module may be configured without an IC. The IC may be mounted on the FPC using a COF method or the like.

[0213] FIG. 14 shows a part of the area including the FPC 172, a part of the circuit 164, and a display device 100A. 10A and 10B are cross-sectional views of a part of the display unit 162 and a part of the region including the end portion. show.

[0214] The display device 100A shown in FIG. 14 includes a transistor 201 between a substrate 151 and a substrate 152. , transistor 205, transistor 206, light-emitting device 190, light-receiving device 110 etc.

[0215] The resin layer 159 and the insulating layer 214 are bonded together via an adhesive layer 142. The light receiving device 110 can be sealed using a solid sealing structure or a hollow sealing structure. In FIG. 14, a space 143 surrounded by a substrate 152, an adhesive layer 142, and a substrate 151 is It is filled with an inert gas (such as nitrogen or argon) and has a hollow sealed structure. The adhesive layer 142 may be provided over the light-emitting device 190 and the light-receiving device 110. In addition, the space 143 surrounded by the substrate 152, the adhesive layer 142, and the substrate 151 is formed by adhesive. It may be filled with a different resin than layer 142.

[0216] The light-emitting device 190 is made up of a pixel electrode 191, a common layer 112, a light-emitting layer 19, and a 3, a common layer 114, and a common electrode 115 are laminated in this order. 91 is connected to the conductive layer 22 of the transistor 206 through an opening provided in the insulating layer 214. It is connected to 22b.

[0217] The edge of the pixel electrode 191 is covered by a partition wall 217. The common electrode 115 comprises a material that is transparent to visible light.

[0218] The light receiving device 110 is made up of a pixel electrode 181, a common layer 112, an active layer 18, and a 3, a common layer 114, and a common electrode 115 are laminated in this order. The conductive layer 212 of the transistor 205 is connected to the insulating layer 214 through an opening formed in the insulating layer 214. The end of the pixel electrode 181 is covered with a partition wall 217. The pixel electrode 181 contains a material that reflects visible light, and the common electrode 115 transmits visible light. Contains materials that

[0219] The light emitted from the light emitting device 190 is emitted to the substrate 152 side. Light is incident on the substrate 152 through the space 143. It is preferable to use a material that is highly permeable to the light.

[0220] The pixel electrode 181 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light-receiving device 110 and the light-emitting device. The light receiving device 110 and the light emitting device 190 are both active The layers 183 and 193 may have the same structure except for the different structures. This allows the light receiving device 110 to be incorporated into the display device 100A without significantly increasing the number of manufacturing steps. It can be stored.

[0221] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the substrate 152 facing the substrate 151 . The resin layer 159 is provided at a position overlapping the light-emitting device 190 and overlapping the light-receiving device 110. The light-shielding layer 158 is not provided at a position where the light-shielding layer 158 is located on the surface of the substrate 152 facing the substrate 151, the resin layer 1 The light-shielding layer 158 is provided to cover the side surfaces of the resin layer 159 and the surface of the resin layer 159 facing the substrate 151. , and has openings at positions overlapping the light receiving device 110 and the light emitting device 190. By providing the light-shielding layer 158, the range in which the light-receiving device 110 detects light can be controlled. Furthermore, by providing the light-shielding layer 158, it is possible to illuminate the light-emitting device 190 without passing through an object. This can prevent light from being directly incident on the light receiving device 110. By providing the resin layer 159, the light-shielding layer 15 8 to the light-emitting device 190, and the distance from the light-shielding layer 158 to the light-receiving device 110. This reduces the sensor noise while improving the visibility of the display. The field angle dependency can be suppressed, thereby improving both display quality and image quality. It is possible.

[0222] The configuration of the partition walls 217 and the light-shielding layer 219a in the display device 100A is the same as that of the display device 10Q (FIG. 12(A)).

[0223] The partition wall 217 covers the end of the pixel electrode 181 and the end of the pixel electrode 191. A light-shielding layer 219a is provided on the light-receiving device 110. The partition wall 217 and the light-shielding layer 219a are located between the light-emitting device 190 and the light-receiving device 190. Preferably, the light receiving device 110 absorbs the wavelength of light that it detects. This can suppress stray light from entering the

[0224] The transistor 201, the transistor 205, and the transistor 206 are all connected to the substrate 1. These transistors are fabricated using the same material and process. It can be manufactured.

[0225] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are formed. The insulating layer 211 has a portion serving as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. An insulating layer 215 is provided over the transistor. An insulating layer 214 is provided over the transistor. The number of gate insulating layers and the number of transistors are determined by the number of gate insulating layers. The number of insulating layers covering the star is not limited, and each may be a single layer or two or more layers.

[0226] At least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. It is preferable to use a material such that the insulating layer can function as a barrier layer. This structure effectively prevents impurities from diffusing into the transistor from the outside. This effectively suppresses the noise and improves the reliability of the display device.

[0227] The insulating layers 211, 213, and 215 are each made of an inorganic insulating film. As the inorganic insulating film, for example, a silicon nitride film or a silicon oxynitride film is preferable. , silicon oxide film, silicon nitride oxide film, aluminum oxide film, aluminum nitride film, etc. Also, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, etc. can be used. aluminum film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, ceramic oxide film Alternatively, a silicon oxide film, a neodymium oxide film, or the like may be used. It may be used.

[0228] Here, organic insulating films often have lower barrier properties than inorganic insulating films. The insulating film preferably has an opening near the edge of the display device 100A. Therefore, it is possible to prevent impurities from entering from the end of the display device 100A through the organic insulating film. Alternatively, the organic insulating film may be arranged so that the edge of the organic insulating film is located inside the edge of the display device 100A. An insulating film may be formed so that the organic insulating film is not exposed at the edge of the display device 100A.

[0229] An organic insulating film is suitable for the insulating layer 214 that functions as a planarizing layer. Materials that can be used include acrylic resin, polyimide resin, epoxy resin, polyamide resin, resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resins, and precursors of these resins.

[0230] In the region 228 shown in FIG. 14, an opening is formed in the insulating layer 214. Even when an organic insulating film is used for the layer 214, the display unit 1 Therefore, the reliability of the display device 100A can be improved. It can be done.

[0231] Transistor 201, transistor 205, and transistor 206 function as gates. a conductive layer 221 serving as a gate insulating layer; an insulating layer 211 serving as a source and drain insulating layer; the conductive layer 222a and the conductive layer 222b, the semiconductor layer 231, and the gate insulating layer The insulating layer 213 functions as a gate, and the conductive layer 223 functions as a gate. The same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 221 and the semiconductor layer 231. It is located between the conductive layer 223 and the semiconductor layer 231 .

[0232] The structure of a transistor included in the display device of this embodiment is not particularly limited. Uses a staggered transistor, a staggered transistor, an inverted staggered transistor, etc. In addition, either a top-gate type or a bottom-gate type transistor structure can be used. Alternatively, gates may be provided above and below the semiconductor layer where the channel is formed. Good too.

[0233] The transistor 201, the transistor 205, and the transistor 206 have channels. The structure in which the semiconductor layer formed by the gate is sandwiched between two gates is applied. Alternatively, the transistors may be driven by supplying the same signal to these. One of the two gates is given a potential to control the threshold voltage, and the other is given a potential to drive the The threshold voltage of the transistor may be controlled by applying a potential.

[0234] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor with crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0235] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. are amorphous silicon, crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.) ) etc.

[0236] The semiconductor layer may be made of, for example, indium and M (M is gallium, aluminum, silicon, fluorine, etc.). Uron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, gel Al, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, one or more selected from the group consisting of tantalum, tungsten, and magnesium), zinc, In particular, M is aluminum, gallium, yttrium, and sulphur. It is preferable that the organic solvent is one or more selected from the group consisting of:

[0237] In particular, the semiconductor layer contains indium (In), gallium (Ga), and zinc (Zn). It is preferable to use IGZO (Indium Zirconate Oxide).

[0238] When the semiconductor layer is an In-M-Zn oxide, the In atoms in the In-M-Zn oxide The atomic ratio of In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratio of elements is In:M:Zn=1:1:1 or a composition close to that. Zn=1:1:1.2 or a similar composition, In:M:Zn=2:1:3 or a similar composition Near composition, In:M:Zn=3:1:2 or nearby composition, In:M:Zn=4:2 :3 or a composition thereof, In:M:Zn=4:2:4.1 or a composition thereof, I n:M:Zn=5:1:3 or a composition close thereto, In:M:Zn=5:1:6 or a composition close thereto In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5 :1:8 or a composition thereof, In:M:Zn=6:1:6 or a composition thereof, I Examples include compositions of n:M:Zn=5:2:5 or the vicinity thereof. includes a range of ±30% of the desired atomic ratio.

[0239] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or a composition in the vicinity When the atomic ratio of In is 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is This includes cases where the ratio is 2 or more and 4 or less. Also, the atomic ratio is In:Ga:Zn=5:1:6 or less. When describing a composition in the vicinity of or near the atomic ratio of Ga, the atomic ratio of In is set to 5. This includes cases where the atomic ratio of Zn is greater than 0.1 and less than 2, and the atomic ratio of Zn is greater than 5 and less than 7. In addition, when describing a composition in which the atomic ratio is In:Ga:Zn=1:1:1 or in the vicinity thereof, When the atomic ratio of n is 1, the atomic ratio of Ga is greater than 0.1 and is not greater than 2, and Zn This includes cases where the atomic ratio is greater than 0.1 and less than 2.

[0240] The transistors included in the circuit 164 and the transistors included in the display portion 162 have the same structure. The circuit 164 may have a plurality of transistors, or may have a different structure. The structures may all be the same, or there may be two or more types. The structures of the plurality of transistors may all be the same, or there may be two or more types.

[0241] A connection portion 204 is provided in the area of ​​the substrate 151 where the substrate 152 does not overlap. In the portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242. The upper surface of the connection portion 204 is made of the same conductive film as the pixel electrode 181. The resulting conductive layer 166 is exposed. This allows the connection portion 204 and the FPC 172 to be connected. Electrical connection can be made via interconnect layer 242.

[0242] Various optical members can be arranged on the outside of the substrate 152. Examples of optical members include a polarizing plate. Examples of the optical film include a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light collecting film. The outside of the substrate 152 is coated with an anti-static film to prevent dust from adhering, It is equipped with a water-repellent film that protects the surface, a hard coating that prevents scratches from occurring during use, and an impact absorbing layer. It may be placed.

[0243] The substrates 151 and 152 are made of glass, quartz, ceramic, sapphire, resin, etc. The substrate 151 and the substrate 152 may be made of a flexible material. This can increase the flexibility of the display device.

[0244] The adhesive layer may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as elastomeric adhesives and anaerobic adhesives can be used. epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide Resin, PVC (Polyvinyl Chloride) Resin, PVB (Polyvinyl Butyral) Resin, EV A (ethylene vinyl acetate) resins, etc. In particular, epoxy resins, etc., which have high moisture permeability, A material with low viscosity is preferable. Two-component resin may also be used. An adhesive sheet or the like may also be used. It's fine.

[0245] The connection layer 242 is made of an anisotropic conductive film (ACF). Conductive Film), Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0246] The light emitting device 190 may be a top-emitting type, a bottom-emitting type, a dual-emitting type, or a The electrode on the light extraction side uses a conductive film that transmits visible light. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted.

[0247] The light emitting device 190 has at least a light emitting layer 193. The light emitting device 190 has a light emitting layer As layers other than 193, a material with high hole injection properties, a material with high hole transport properties, a hole blocking material materials, materials with high electron transport properties, materials with high electron injection properties, or bipolar materials (electron transport For example, a common layer may be provided. 112 preferably has one or both of a hole injection layer and a hole transport layer. For example, The common layer 114 preferably includes one or both of an electron transport layer and an electron injection layer.

[0248] The hole injection layer is a layer that injects holes from the anode to the hole transport layer, and is made of a material with high hole injection properties. The material having a high hole injection property is an aromatic amine compound or a hole transporting material. and an acceptor material (electron-accepting material).

[0249] In a light-emitting device, the hole transport layer transports holes injected from the anode by the hole injection layer. In a light-receiving device, the hole transport layer transports electrons incident on the active layer to the light-emitting layer. The hole transport layer is a layer that transports holes generated by the incident light to the anode. The hole transport material is a layer containing 1×10 -6 cm 2 Hole mobility above / Vs It is preferable that the material has a higher hole transporting property than an electron transporting property than the above. Other materials can also be used. As the hole transport material, π-electron-rich heteroaromatic compounds can be used. compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines A material with high hole transporting properties, such as (a compound having an aromatic amine skeleton), is preferred.

[0250] In a light-emitting device, the electron transport layer transports electrons injected from the cathode by the electron injection layer. In a light-receiving device, the electron transport layer is a layer that transports electrons incident on the active layer to the light-emitting layer. The electron transport layer is a layer that transports electrons generated by the incident light to the cathode. The electron transport material is a layer containing 1×10 -6 cm 2 Electron mobility above / Vs It is preferable that the material has a higher electron transporting property than a hole transporting property than the above. As the electron transporting material, metal complexes having a quinoline skeleton can be used. metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, thiazolidinyl compounds, In addition to metal complexes with an oxadiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, Quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoline derivatives, Benzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, In addition, π-electron deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds have high electron transport properties. Materials can be used.

[0251] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is made of a material with high electron injection properties. The material with high electron injection properties is an alkali metal, an alkaline earth metal, or As a material with high electron injection properties, an electron transport material can be used. A composite material containing a material and a donor material (electron donor material) can also be used.

[0252] The common layer 112, the light-emitting layer 193, and the common layer 114 contain low-molecular-weight compounds and high-molecular-weight compounds. The common layer 112 and the light-emitting layer 1 may contain an inorganic compound. The layers constituting the common layer 114 and the layer 93 are formed by deposition (including vacuum deposition), transfer, The film can be formed by a method such as a printing method, an ink jet method, or a coating method.

[0253] The light-emitting layer 193 is a layer containing a light-emitting material. The luminescent materials include blue, purple, blue-purple, green, yellow-green, yellow A material that emits light of a color such as red, orange, or near-infrared light is used as the light-emitting material. It is also possible to use a substance that emits light.

[0254] The active layer 183 of the light-receiving device 110 includes a semiconductor, such as silicon. Examples of the semiconductor include inorganic semiconductors and organic semiconductors containing organic compounds. An example in which an organic semiconductor is used as the semiconductor in the active layer is shown below. The light-emitting layer 193 of the light-emitting device 190 and the active layer 183 of the light-receiving device 110 are formed in the same layer. This is preferable because it can be formed by a method (for example, a vacuum deposition method) and the manufacturing equipment can be shared. stomach.

[0255] The active layer 183 is made of an n-type semiconductor material, such as fullerene (e.g., C 60 , C 70 etc. ) or its derivatives. As a p-type semiconductor material, copper(II) phthalocyanine (Copper(II) phthalocyanine (CuPc) and tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc Electron donating properties of phthalocyanine (Zinc Phthalocyanine; ZnPc) As a p-type semiconductor material, tin phthalocyanine ( SnPc) may also be used.

[0256] For example, the active layer 183 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. .

[0257] In addition to the gate, source, and drain of the transistor, various wiring and power supply components that make up the display device are also included. Materials that can be used for the conductive layers such as electrodes include aluminum, titanium, chromium, and nickel. Nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten These materials include metals such as tungsten, as well as alloys that contain these metals as their main components. The film containing the compound can be used as a single layer or as a laminate structure.

[0258] Examples of the light-transmitting conductive material include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as gallium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphite Alternatively, gold, silver, platinum, magnesium, nickel, tungsten, Metallic materials such as nickel, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium Alternatively, an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (e.g., For example, titanium nitride) may be used. When using a material, it is preferable to make it thin enough to have light-transmitting properties. For example, a laminated film of an alloy of silver and magnesium and an indium alloy can be used as the conductive layer. It is preferable to use a laminated film of tungsten oxide or the like, since this can increase the conductivity. These include conductive layers such as various wirings and electrodes that constitute the display device, and conductive layers that the display device has. The conductive layer can also be used as a pixel electrode or a common electrode.

[0259] Examples of insulating materials that can be used for each insulating layer include acrylic resin and epoxy resin. Resins such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, oxide Examples of the insulating material include inorganic insulating materials such as aluminum.

[0260] [Display device 100B] FIG. 15A shows a cross-sectional view of the display device 100B.

[0261] The display device 100B has a protective layer 116 and a solid sealing structure. The difference from the display device 100A is mainly as follows.

[0262] By providing a protective layer 116 that covers the light receiving device 110 and the light emitting device 190, The device 110 and the light-emitting device 190 are prevented from being penetrated by impurities such as water. This can improve the reliability of the device 110 and the light emitting device 190.

[0263] In a region 228 near the edge of the display device 100B, an insulating layer 214 is formed through an opening in the insulating layer 214. It is preferable that the insulating layer 215 and the protective layer 116 contact each other. It is preferable that the inorganic insulating film and the inorganic insulating film of the protective layer 116 are in contact with each other. This prevents impurities from entering the display section 162 from the outside via the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0264] 15(B) shows an example in which the protective layer 116 has a three-layer structure. The layer 116 is made up of an inorganic insulating layer 116a on the common electrode 115 and an organic insulating layer 116b on the inorganic insulating layer 116a. The insulating layer 116b has an edge layer 116b and an inorganic insulating layer 116c on the organic insulating layer 116b.

[0265] The ends of the inorganic insulating layer 116a and the inorganic insulating layer 116c are closer to each other than the ends of the organic insulating layer 116b. The inorganic insulating layer 116a extends outward and contacts the insulating layer 214( The insulating layer 215 (inorganic insulating layer) is in contact with the insulating layer 215 through the opening in the insulating layer 215. The layer 215 and the protective layer 116 may enclose the light receiving device 110 and the light emitting device 190. Therefore, the reliability of the light receiving device 110 and the light emitting device 190 can be improved. .

[0266] In this way, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. In this case, it is preferable that the end of the inorganic insulating film extends further outward than the end of the organic insulating film.

[0267] In the display device 100B, the protective layer 116 and the substrate 152 are bonded together by the adhesive layer 142. The adhesive layer 142 adheres to the light-receiving device 110 and the light-emitting device 190, respectively. The display device 100B has a solid sealing structure.

[0268] [Display device 100C] 16 and 17A show cross-sectional views of the display device 100C. The figure is the same as that of the display device 100A (FIG. 13). A part of the area including C172, a part of the circuit 164, and a part of the display unit 162 are cut off. 17A shows an example of a cross section of the display unit 162 of the display device 100C. 16 shows an example of a cross section of the display unit 162, particularly the receiving When the region including the optical device 110 and the light-emitting device 190R that emits red light is cut, 17A shows an example of a cross section of the display unit 162, particularly a light emitting element that emits green light. When the area including the optical device 190G and the light-emitting device 190B that emits blue light is cut An example of a cross section of the above is shown.

[0269] The display device 100C shown in FIGS. 16 and 17A has a substrate 153 and a substrate 154 between which a transistor is provided. Transistor 203, transistor 207, transistor 208, transistor 209, Transistor 210, light emitting device 190R, light emitting device 190G, light emitting device 190 B, and a light receiving device 110.

[0270] The resin layer 159 and the common electrode 115 are bonded together via an adhesive layer 142, and the display device 10 The 0C uses a solid sealing structure.

[0271] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The insulating layer 157 is bonded to the substrate 151 by an adhesive layer 156 .

[0272] The method for manufacturing the display device 100C is as follows: first, the insulating layer 212, the transistors, the light-receiving device The first substrate on which the light emitting devices and the like are provided is made up of an insulating layer 157 and a resin layer 110. 59 and a second substrate on which a light-shielding layer 158 and the like are provided are bonded by an adhesive layer 142. Then, the first fabrication substrate is peeled off and the substrate 153 is attached to the exposed surface, and the second fabrication substrate is attached. The substrate is peeled off and a substrate 154 is attached to the exposed surface, so that the first fabrication substrate and the second fabrication substrate are The components formed on the plate are transferred to the substrate 153 and the substrate 154. It is preferable that each of the plates 154 is flexible. The flexibility of the film can be increased.

[0273] The insulating layer 212 and the insulating layer 157 are respectively formed by the insulating layer 211, the insulating layer 213, and the insulating layer 157. An inorganic insulating film that can be used for the layer 215 can be used.

[0274] The light-emitting device 190R is made up of, from the insulating layer 214b side, a pixel electrode 191R, a common layer 112, and a light-emitting layer. The layer 193R, the common layer 114, and the common electrode 115 are laminated in this order. The element electrode 191R is connected to the conductive layer 169R through an opening provided in the insulating layer 214b. The conductive layer 169R is connected to the transistor through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the conductive layer 222b of the insulating layer 215. The pixel electrode 191R is connected to the low resistance region 231n through the opening. , electrically connected to the transistor 208. The transistor 208 is a light-emitting device. It has the function of controlling the drive of 190R.

[0275] Similarly, the light emitting device 190G is formed by a pixel electrode 191G, a common layer 11G, and a 2. A laminated structure in which a light-emitting layer 193G, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191G includes the conductive layer 169G and the conductive layer 222b of the transistor 209. The pixel is electrically connected to the low resistance region 231n of the transistor 209 via the The electrode 191G is electrically connected to the transistor 209. , has the function of controlling the driving of the light emitting device 190G.

[0276] The light-emitting device 190B is made up of a pixel electrode 191B and a common layer 11B from the insulating layer 214b side. 2. A laminated structure in which a light-emitting layer 193B, a common layer 114, and a common electrode 115 are laminated in this order. The pixel electrode 191B includes the conductive layer 169B and the conductive layer 222b of the transistor 210. The pixel is electrically connected to the low resistance region 231n of the transistor 210 via the The electrode 191B is electrically connected to the transistor 210. , has the function of controlling the driving of light emitting device 190B.

[0277] The light receiving device 110 is made up of a pixel electrode 181, a common layer 112, an active layer 114b, and a common layer 112. The pixel electrode 83, the common layer 114, and the common electrode 115 are laminated in this order. 181 is connected to the transistor 207 via the conductive layer 168 and the conductive layer 222b of the transistor 207. That is, the pixel electrode 181 is electrically connected to the low resistance region 231n of the transistor 207. The resistor 207 is electrically connected to the input terminal of the power supply 201 .

[0278] The ends of the pixel electrodes 181, 191R, 191G, and 191B are covered with partition walls 216. The pixel electrodes 181, 191R, 191G, and 191B contain a material that reflects visible light. The common electrode 115 includes a material that transmits visible light.

[0279] The light emitted from the light emitting devices 190R, 190G, and 190B is emitted toward the substrate 154. Furthermore, light is incident on the light-receiving device 110 through the substrate 154 and the adhesive layer 142 . The substrate 154 is preferably made of a material that is highly transparent to visible light.

[0280] The pixel electrode 181 and the pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are connected to the light-receiving device 110 and the light-emitting device 112. The light receiving device 110 and each color The light-emitting device has the same configuration as the light-emitting device of the above except for the configuration of the active layer 183 and the light-emitting layer. This allows the display device 100C to receive light without significantly increasing the number of manufacturing steps. The device 110 can be embedded.

[0281] A resin layer 159 and a light-shielding layer 158 are provided on the surface of the insulating layer 157 facing the substrate 153. The resin layer 159 is provided at a position overlapping the light emitting devices 190R, 190G, and 190B. The light-shielding layer 158 is not provided at a position where it overlaps with the light-receiving device 110. The surface of the resin layer 159 on the substrate 153 side, the side surface of the resin layer 159, and the surface of the resin layer 159 on the substrate 153 side are covered. The light-shielding layer 158 is provided at a position overlapping the light-receiving device 110 and at a position overlapping the light-emitting device 190. The light-shielding layer 158 has openings at positions overlapping with the R, 190G, and 190B. This allows the range in which the light receiving device 110 detects light to be controlled. 158, the light emitting devices 190R, 190G, and 190B can be illuminated without passing through the object. This can prevent light from being directly incident on the light receiving device 110. By providing the resin layer 159, the light-shielding layer 15 The distance from the light-shielding layer 158 to the light-receiving device 110 is This reduces the sensor noise while suppressing the viewing angle dependency of the display. Therefore, it is possible to improve both the display quality and the image quality.

[0282] The partition walls 216, the light-shielding layers 219a, and the spacers 219b in the display device 100C are configured as follows: , which is similar to the display device 10K (FIGS. 7(B) and 8(A)).

[0283] In FIG. 16, the partition wall 216 has an opening between the light receiving device 110 and the light emitting device 190R. The light-shielding layer 219a is provided so as to fill the opening. The light-shielding layer 219a is located between the light-receiving device 110 and the light-emitting device 190R. The light emitted by the optical device 190R is absorbed. Stray light can be suppressed.

[0284] Spacer 219b is located between light emitting device 190G and light emitting device 190B. The upper surface of the spacer 219b is preferably closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. For example, the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is It is preferable that the height (thickness) of the adhesive layer 142 is larger than the height (thickness) of the optical layer 219a. As shown in FIG. 17(A), the spacer 219b and the light-shielding layer 15 8, the light-shielding layer 158 is in contact with the common electrode 115 (or the protective layer). That's fine.

[0285] A connection portion 204 is provided in the area of ​​the substrate 153 where the substrate 154 does not overlap. In the portion 204, the wiring 165 is connected to the F via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 is electrically connected to the PC 172. The conductive layer 167 is made of the same conductive film as the conductive layer 168. The upper surface of the connection portion 204 is formed by applying the same conductive film as the pixel electrode 181. The conductive layer 166 obtained by the process is exposed. can be electrically connected via the connection layer 242.

[0286] Transistor 207, transistor 208, transistor 209, and transistor 21 0 is a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel forming region 231i and a pair of low resistance regions 231n; The conductive layer 222a is connected to one of the pair of low resistance regions 231n, and the conductive layer 222b is connected to the other of the pair of low resistance regions 231n. a conductive layer 222b connecting the gate electrode to the insulating layer 225; The insulating layer 211 includes a conductive layer 223 and an insulating layer 215 that covers the conductive layer 223. The insulating layer 225 is located between the conductive layer 221 and the channel forming region 231i. 23 and the channel forming region 231i.

[0287] The conductive layer 222a and the conductive layer 222b are each formed through an opening in the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b is connected to the low resistance region 231n. One acts as a source and the other acts as a drain.

[0288] In FIG. 16, the insulating layer 225 overlaps the channel forming region 231i of the semiconductor layer 231, and For example, the insulating layer 225 is formed by using the conductive layer 223 as a mask. By processing, the structure shown in Fig. 16 can be fabricated. In Fig. 16, the insulating layer 225 and the conductive layer An insulating layer 215 is provided to cover the conductive layer 222a through an opening in the insulating layer 215. and conductive layer 222b are connected to the low resistance region 231n. An insulating layer covering the transistor may be provided over the conductive layer 222a and the conductive layer 222b.

[0289] On the other hand, in the transistor 202 shown in FIG. 17B, the insulating layer 225 is formed on the top surface of the semiconductor layer and The conductive layer 222a and the conductive layer 222b are formed on the insulating layer 225 and the insulating layer 226, respectively. The insulating layer 215 is connected to the low resistance region 231n through an opening formed therein.

[0290] As described above, the display device of the present embodiment has a light receiving device and a light emitting device in the display section. The display unit has both the function of displaying an image and the function of detecting light. Compared to providing a sensor outside the display unit or the display device, the electronic device can be made smaller and It is possible to reduce the weight. In addition, the sensor provided outside the display unit or the display device can be By combining these, more multi-functional electronic devices can be realized.

[0291] The light-receiving device has at least one layer between a pair of electrodes, which is a light-emitting device ( For example, the light-receiving device can have a common structure with the active layer. All of the layers may have the same structure as the light-emitting device (EL device). By simply adding a process for forming an active layer to the manufacturing process of a light-emitting device, a light-emitting device can be fabricated. The light-receiving device and the light-emitting device can be formed on the same substrate. In this case, the pixel electrode and the common electrode can be formed using the same material and in the same process. In addition, a circuit electrically connected to the light receiving device and a circuit electrically connected to the light emitting device can be The manufacturing process of the display device can be simplified by manufacturing the same circuit and the same material using the same process. In this way, it is possible to incorporate a light-receiving device without requiring a complicated process, and to achieve convenience. A display device with high performance can be manufactured.

[0292] In the display device of the present embodiment, holes are easily injected into the light-emitting layer, and electrons are difficult to inject. By applying such a configuration, the initial state of the light-emitting device can be This suppresses degradation and significantly extends the operating life of the light-emitting device. This can improve the reliability of the display device.

[0293] In the display device of the present embodiment, the distance from the light-shielding layer to the light-receiving device is long, and A structure is provided on the surface on which the light-shielding layer is formed so that the distance from the light-shielding layer to the light-emitting device is shortened. This reduces sensor noise, increases image resolution, and reduces viewing angle dependency of the display. Therefore, both the display quality and the image quality of the display device can be improved. can be increased.

[0294] This embodiment mode can be combined with other embodiment modes as appropriate. In the case where multiple configuration examples are shown in one embodiment, the configuration examples may be combined as appropriate. It is possible to do this.

[0295] (Embodiment 2) In this embodiment, a light-emitting device that can be used for a display device according to one embodiment of the present invention will be described. This will be explained with reference to FIG.

[0296] The light-emitting device shown in FIG. 18(A) has an anode 101, an EL layer 103, and a cathode 102. The light-emitting device shown in FIG. 18(A) has a single EL layer sandwiched between a pair of electrodes. The EL layer 103 has a single structure. From the anode 101 side, the EL layer 103 is made up of a hole injection layer 121, It has a hole transport layer 122 , a light emitting layer 123 , an electron transport layer 124 , and an electron injection layer 125 . Although not shown in FIGS. 18(A) to 18(D), the light-emitting device has an optical adjustment layer. It's fine.

[0297] Anode 101, cathode 102, hole injection layer 121, hole transport layer 122, light emitting layer 123, electron transport layer The electron transport layer 124 and the electron injection layer 125 may each have a single layer structure or a laminated structure. That's fine.

[0298] The light-emitting device shown in FIG. 18(B) includes an anode 101, an EL layer 103a, a charge generating layer 104, The light-emitting device shown in FIG. 18(B) has two A tandem structure is applied, having a charge generation layer 104 between the EL layers.

[0299] Each EL layer in the tandem structure light-emitting device has the structure shown in Figs. 18(A), 18(C), and 1 A structure similar to that of the EL layer in a single-structure light-emitting device shown in FIG. 8(D) can be applied. do.

[0300] When a voltage is applied between the anode 101 and the cathode 102, the charge generating layer 104 generates a and EL layer 103b, which has the function of injecting electrons into one layer and holes into the other. Therefore, in FIG. 18(B), the anode 101 has a higher potential than the cathode 102. When a voltage is applied so that electrons are injected from the charge generating layer 104 into the EL layer 103a, Holes are injected into the L layer 103b.

[0301] In a tandem-structure light-emitting device, the emission color of each EL layer is made different, The entire optical device can emit light of the desired color. For example, a device having two EL layers can be In a light-emitting device, red and green light is emitted from one EL layer and blue light is emitted from the other EL layer. By obtaining colored light emission, a light-emitting device that emits white light as a whole can be obtained. For example, in a light-emitting device having three EL layers, blue light can be emitted from the first EL layer. The first EL layer emits green light, the second EL layer emits green light, and the third EL layer emits red light. As a whole, a white light-emitting device can be obtained. In a light-emitting device having an EL layer, blue emission from the first EL layer and a second EL layer on the first EL layer Yellow, yellow-green, or green light from the second EL layer and red light from the third EL layer on the second EL layer. By obtaining blue light from the L layer, the entire light-emitting device emits white light. For example, in a light-emitting device having four EL layers, the first EL blue light emitted from the second EL layer and the third EL layer on the first EL layer, respectively. Yellow, yellow-green, or green emission, red emission from the other, on the second EL layer and on the third EL By obtaining blue light emission from the fourth EL layer on the first layer, the light-emitting device as a whole emits white light. A light-emitting device can be obtained.

[0302] The hole transport layer 122 of the light-emitting device shown in FIG. 18(C) and FIG. 18(D) is a hole injection layer. The hole transport layer 122a on the light-emitting layer 121 side and the hole transport layer 122b on the light-emitting layer 123 side are It has a layered structure.

[0303] The electron transport layer 124 of the light-emitting device shown in FIG. 18(D) is an electron transport layer on the light-emitting layer 123 side. The electron transport layer 124b has a two-layer structure including a transport layer 124a and an electron transport layer 124b on the electron injection layer 125 side.

[0304] The light-emitting device of the present embodiment has a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. At least one of the input layers can be a common layer with the light receiving device. The manufacturing process can be reduced compared to when the light-emitting devices are formed separately, and the light-emitting devices can be formed on the same surface. It is possible to form a light receiving device.

[0305] For example, the light-emitting device of the present embodiment may include a hole injection layer, a hole transport layer, an electron transport layer, and an electron transport layer. All of the electron injection layers can be common layers with the light receiving device. By simply creating separate layers for the light-emitting device and the light-receiving device, and a light receiving device.

[0306] Materials that can be used in light-emitting devices are described below.

[0307] <Electrode> The materials for forming the pair of electrodes of the light-emitting device include metals, alloys, electrically conductive compounds, and In-Sn oxide (IT) and mixtures thereof can be used as appropriate. O), In-Si-Sn oxide (also called ITSO), In-Zn oxide, In -W-Zn oxide. Other examples include aluminum (Al), titanium (Ti), chromium (Cr) Cobalt (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni), Copper (Cu), Gallium (Ga), Zinc (Zn), Indium (In), Tin (Sn), Molybdenum (Mo) Butan (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold (A u), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and other metals, Also, alloys containing these in appropriate combinations can be used. Elements belonging to Group 1 or 2 of the periodic table (e.g., lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), Rare earth metals such as terbium (Yb) and alloys containing these in appropriate combinations, graphene etc. can be used.

[0308] When a light-emitting device having a microcavity structure is fabricated, the reflective electrode and the semi-transparent electrode are Therefore, a single or multiple layer of a desired conductive material is used. The electrodes can be formed by laminating layers. The electrodes can be fabricated by sputtering or vacuum deposition. You can be there.

[0309] <Hole injection layer> The hole injection layer 121 preferably comprises a first compound and a second compound.

[0310] The first compound is an electron-accepting material (acceptor material), and the second compound It has electron-accepting properties.

[0311] The second compound is a hole transporting material. A hole transporting material has a higher ability to transport holes than electrons. expensive.

[0312] The highest occupied molecular orbital level (HOMO level) of the second compound is preferably relatively low (deep). Specifically, the HOMO level of the second compound is −5.7 eV or more and −5.4 eV or less. It is preferable that the HOMO level of the second compound is relatively low. This is preferable because it facilitates the injection of holes into 2.

[0313] The first compound contains an electron-withdrawing group (especially a halogen group such as a fluoro group or a cyano group). An organic compound having the above structure can be used.

[0314] Examples of the first compound include quinodimethane derivatives, chloranil derivatives, hexaazato Organic acceptors such as phenylene derivatives can be used. ,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4- TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8 ,9,12-Hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7, 8-Hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2 -(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H -pyren-2-ylidene)malononitrile, etc. Compounds in which electron-withdrawing groups are bonded to condensed aromatic rings with multiple heteroatoms, such as It is stable and preferable. In addition, electron-withdrawing groups (especially halogen groups such as fluoro groups and cyano groups) Radialene derivatives having the formula [3] are preferred because they have very high electron-accepting properties. Examples of the [3]radialene derivative having a group include α,α',α''-1,2,3- Cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzoate] diacetonitrile], α,α',α''-1,2,3-cyclopropanetriylident Tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzene] Acetonitrile], α,α',α''-1,2,3-cyclopropanetriylidene tris[ 2,3,4,5,6-pentafluorobenzeneacetonitrile].

[0315] The second compound preferably has a hole transporting skeleton. The HOMO level of the hole transport material is not too high (shallow), and the carbazole skeleton and dibenzyl A benzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton are preferred.

[0316] The second compound has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and The second compound preferably has at least one of a diamine and an anthracene skeleton. Aromatic amines having a substituent containing a benzofuran ring or a dibenzothiophene ring, naphtha Aromatic monoamines having an arylene ring, or 9-fluorenyl groups are bonded to the arylene groups The amine may be an aromatic monoamine attached to the nitrogen of the amine.

[0317] When the second compound has an N,N-bis(4-biphenyl)amino group, a long-life luminescence device is obtained. This is preferable because a vice can be made.

[0318] The second compound may be, for example, N-(4-biphenyl)-6,N-diphenylbenzo[ b] naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis( 4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2- d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1B P), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6- Amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]na N,N-bis( 4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBA Bnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl] -4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiazolinone) [4-(4-phenyl)biphenyl]-N-phenyl-4-biphenylamine (abbreviated as ThB A1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation Name: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyl 4,4'-diphenyl-4''-(6 ;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4, 4'-Diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine ( Abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-(7-phenyl)na butyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl Phenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BB A(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl ) Triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4 ''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαN B), 4,4'-diphenyl-4''-(5;2'-binaphthyl-1-yl)tripheny Biphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2- naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-( 3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltrimethyl Phenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[ 4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: TPB iAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviated as α NBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB) 1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl] 4'-[4-(3- phenyl-9H-carbazol-9-yl)phenyl]tris(1,1'-biphenyl- 4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazole-9 -yl)biphenyl-4-yl]-4'-(2-naphthyl)-4''-phenyltriphenyl Nylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol- [4-(1-naphthyl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spiro Bis(9H-fluorene)-2-amine (abbreviation: PCBNBSF), N,N-bis([1, 1'-biphenyl]-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine N,N-bis([1,1'-biphenyl]-4-yl)-9, 9'-Spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-( 1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2- yl)-9,9'-spirobi(9H-fluorene)-4-amine (abbreviation: oFBiSF) , N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)di Benzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl ]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthyl amine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluorene- 9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-yl)triphenylamine mBPAFLP, 4-phenylfluoren-9-yltriphenylamine Nyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole) (3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl- 4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole) 4,4'-di(1-naphthyl-3-yl)triphenylamine (abbreviation: PCBANB), yl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine( Abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole -3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviated as PCBA SF), N-(1,1'-biphenyl-4-yl)-9,9-dimethyl-N-[4-(9 -phenyl-9H-carbazol-3-yl)phenyl]-9H-fluorene-2-amine PCBBiF, 3,3'-(naphthalene-1,4-diyl)bis(9-phenyl) 4-(10-phenyl-9H-carbazole) (abbreviation: PCzN2), 4-(10-phenyl-9H-carbazole) 4'-(9-phenyl-9H-fluoren-9-yl)triphenylamine (abbreviation Examples include the FLPAPA.

[0319] <Hole transport layer> The hole transport layer 122 transports the holes injected by the hole injection layer 121 to the light emitting layer 123. This is the layer where

[0320] The hole transport layer 122 preferably comprises a third compound.

[0321] The third compound is a hole transport material. A hole transporting material capable of transporting a hole can be used.

[0322] The HOMO level of the third compound is preferably equal to or lower than the HOMO level of the second compound. The difference between the HOMO level of the third compound and the HOMO level of the second compound is 0.2 eV. It is preferable that it is within .

[0323] The second compound and the third compound have a carbazole skeleton, a dibenzofuran skeleton, and It is preferable that the compound has at least one of a dibenzothiophene skeleton and an anthracene skeleton. I wish.

[0324] The second compound and the third compound have the same hole transporting skeleton (particularly, a dibenzofuran skeleton). This is preferable because it allows smooth hole injection.

[0325] It is more preferable that the second compound and the third compound are the same, since this allows for smooth hole injection. I wish.

[0326] When the hole transport layer 122 has a laminated structure, each layer constituting the hole transport layer 122 has a function of emitting holes. This is the layer that transports light to the optical layer 123.

[0327] The hole transport layer 122a in FIG. 18(C) and FIG. 18(D) is the hole transport layer 122a in FIG. 18(A). It may have a similar structure to the transport layer 122 .

[0328] 18(C) and 18(D) in the hole transport layer 122b (i.e., the hole transport layer 122 Among these, the layer closest to the light-emitting layer 123) has a function as an electron blocking layer. is preferred.

[0329] The hole transport layer 122b preferably contains a fourth compound.

[0330] The fourth compound is a hole transport material. A hole transporting material capable of transporting a hole can be used.

[0331] The HOMO level of the fourth compound is preferably lower than the HOMO level of the third compound. The difference between the HOMO level of the fourth compound and the HOMO level of the third compound is within 0.2 eV. It is preferable that:

[0332] The second compound, the third compound, and the fourth compound each have a carbazole skeleton, a dibenzo At least one of a benzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton It is preferred that the compound has the following structure:

[0333] The second compound, the third compound, and the fourth compound have the same hole transporting skeleton (particularly, a dibenzo The presence of a furan skeleton is preferred because it allows smooth hole injection.

[0334] As mentioned above, for the second and third compounds (and even the fourth compound), HO The difference in MO level is small, or the hole transporting skeleton (preferably the same hole transporting skeleton) is By having such a structure, holes are smoothly injected into the hole injection layer and the hole transport layer, and the driving voltage This can prevent the rise of the electron transport current and the shortage of holes in the light-emitting layer 123.

[0335] <Light-emitting layer> The light-emitting layer is a layer containing a light-emitting substance. The light-emitting layer may contain one or more light-emitting substances. The luminescent materials are blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. In addition, as the light-emitting material, a material that emits near-infrared light is used. can also be used.

[0336] The light-emitting layer contains one or more organic compounds (host materials) in addition to the light-emitting material (guest material). The one or more organic compounds may include the following: One or both of a hole transporting material and an electron transporting material described in the embodiment mode may be used. In addition, a bipolar material may be used as one or more organic compounds. stomach.

[0337] The light-emitting material that can be used in the light-emitting layer is not particularly limited, and can be any light-emitting material having a singlet excitation energy of 1000 .mu.m or more. Luminescent materials that emit light in the visible or near-infrared region, or triplet excitation energy It is possible to use a luminescent material that converts the light emitted from the fluorescent material into light in the visible or near infrared region.

[0338] Examples of luminescent materials that convert singlet excitation energy into luminescence include fluorescent luminescent materials, such as For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, Rubazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxazone Sarin derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthracene Pyrene derivatives, naphthalene derivatives, etc. are particularly well known. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl) -N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene N,N'-diphenyl-1,6-diamine (abbreviation: 1,6mMemFLPAPrn) -N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene N,N'-bis(dibenzofuran-1,6-diamine) (2-phenyl-1,6-diamine)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrA Prn), N,N'-bis(dibenzothiophen-2-yl)-N,N'-diphenylpi Pyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6- diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine ] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N -phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6B nfAPrn-02), N,N'-(pyren-1,6-diyl)bis[(6,N-diphenyl) Nylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfA Prn-03) are particularly notable. Pyrene diamine compounds such as FLPAPrn and 1,6BnfAPrn-03 are The condensed aromatic diamine compounds have high hole trapping properties, and are excellent in luminous efficiency and reliability. Therefore, it is preferable.

[0339] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl- 9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-calcium (10-phenyl-9-anthryl)-4'-(10-benzol-9-yl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-di N,9-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA) Phenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCAPA, 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9- Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviation Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-a N-(2-phenyl-9H-carbazol-3-amine (abbreviation: 2PCAPPA), -[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), 3,10-bis[N -(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2 ,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)- 02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]na Futo[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf( IV)-02) etc. can be used.

[0340] Examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials and thermally activated Thermally activated delayed fluorescence Examples include TADF (Transient Aided Fluorescence) materials.

[0341] Examples of phosphorescent materials include those having a 4H-triazole skeleton, a 1H-triazole skeleton, and an iridium ion. Organometallic compounds having a midazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton complexes (especially iridium complexes), which have phenylpyridine derivatives with electron-withdrawing groups as ligands Examples of the metal complex include organometallic complexes (particularly iridium complexes), platinum complexes, and rare earth metal complexes.

[0342] It has a blue or green color and the peak wavelength of the emission spectrum is between 450 nm and 570 nm. Some phosphorescent materials include the following:

[0343] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrp)] tz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl Ir(iPr) tz)3]), organometallic complexes with a 4H-triazole skeleton, such as tris[3-methyl ethyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato] Iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl -5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) ) (abbreviation: [Ir(PrptZ1-Me)3]) The organometallic complex fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl] [Ir(iPrpmi)3] ), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]furan [Phenanthridineto]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3] Organometallic complexes with imidazole skeletons such as bis[2-(4',6'-difluoromethyl) (triphenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl) bis[2-(4',6'-difluorophenyl)pyridine]borate (abbreviation: FIr6) Ginat-N,C 2’ ]Iridium(III) picolinate (abbreviation: FIrpic), bis {2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’} Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), Bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium( III) Acetylacetonate (abbreviation: FIr(acac)) and other compounds with electron-withdrawing groups Examples of suitable organometallic complexes include those having phenylpyridine derivatives as ligands.

[0344] It is green or yellow and the peak wavelength of the emission spectrum is between 495 nm and 590 nm. Some phosphorescent materials include the following:

[0345] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation :[Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)i Lithium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(trimethylsilyl) Bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4 -phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(a cac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]) , (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl phenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( organometallic iridium complexes with pyrimidine skeletons, such as (acetyl acac)] cetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III)( Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: Organometallic pyrazine skeletons such as [Ir(mppr-iPr)2(acac)] Iridium complex, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iriji Ir(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), (benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [I r(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(II I) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato- N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a cac)]), [2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]bis[ 2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir( ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC] [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC] Organometallic iridium complexes with pyridine skeletons, bis(2,4-diphenyl-1,3-o Xazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl] Pyridinato-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir( p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolato-N,C 2 ’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(bt)2(acac) ]), as well as organometallic complexes such as tris(acetylacetonato)(monophenanthroline) Rare earth metals such as terbium(III) (abbreviated as [Tb(acac)3(Phen)]) Examples include complexes of the aryl group.

[0346] Yellow or red, with a peak wavelength of 570 nm or more and 750 nm or less in the emission spectrum. Some phosphorescent materials include the following:

[0347] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinyl] dinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Ir(5mdppm)2(dpm)], bis[4,6-di (Naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) ) (abbreviation: [Ir(d1npm)2(dpm)]), tris(4-t-butyl-6-phenyl) Nylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]) A novel organometallic complex with a pyrimidine skeleton, (acetylacetonato)bis(2,3,5-trimethylsilyl) Triphenylpyrazinate)iridium(III) (abbreviation: [Ir(tppr)2(acac )]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridine Ir(tppr)2(dpm) -2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]fu phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ 2 O,O') Iriji Ir(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6 -dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-di methylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetra ... Methyl-3,5-heptanedionate-κ 2 O,O')iridium(III) (abbreviation: [I r(dmdppr-dmCP)2(dpm)]), (acetylacetonato)bis[2-methyl Thiyl-3-phenylquinoxalinato-N,C 2’ ]Iridium(III) (abbreviation: [Ir (mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoline Xalinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(dpq)2(acac )]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxa [Ir(Fdpq)2(acac)]), bis{ 4,6-dimethyl-2-[5-(5-cyano-2-methylphenyl)-3-(3,5-di methylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetra ... Methyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [I Organometallic compounds with pyrazine skeletons such as r(dmdppr-m5CP)2(dpm)] complexes and tris(1-phenylisoquinolinato-N,C 2’ ) Iridium (III) (abbreviation Name: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) Iriji Ir(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC](2,4-pentaerythroyl) Tandione-κ 2 O,O') Iridium(III) and other organic compounds with a pyridine skeleton Metal complex, 2,3,7,8,12,13,17,18-octaethyl-21H,23H- Platinum complexes such as porphyrin platinum(II) (abbreviation: [PtOEP]), tris(1,3 -diphenyl-1,3-propanedionato)(monophenanthroline)europium(I II) (abbreviation: [Eu(DBM)3(Phen)]), tris[1-(2-thenoyl)- 3,3,3-Trifluoroacetonato](monophenanthroline)europium(III) ) (abbreviation: [Eu(TTA)3(Phen)])

[0348] The organic compounds used in the light-emitting layer (host material, assist material, etc.) are Select one or more materials that have an energy gap larger than the energy gap. It can be used as such.

[0349] As for organic compounds to be used in combination with fluorescent materials, the energy level of the singlet excited state is It is preferable to use an organic compound having a large electron transport potential and a small energy level in the triplet excited state. .

[0350] Although some of the examples overlap with those above, preferred examples of luminescent materials (fluorescent materials, phosphorescent materials) From the viewpoint of combination, specific examples of organic compounds are shown below.

[0351] Organic compounds that can be used in combination with fluorescent materials include anthracene derivatives. compounds, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, dibenzo Examples include condensed polycyclic aromatic compounds such as zo[g,p]chrysene derivatives.

[0352] Specific examples of organic compounds (host materials) used in combination with fluorescent materials include 9-fluorophenyl ethers, Phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCzPA, 3,6-diphenyl-9-[4-(10-phenyl-9-anthracene] tolyl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 3-[4-(1-naphthalene 9,1-Phenyl-phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 0-Diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[4- (10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation Name: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation Name: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-( 10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3-a PCAPBA, N-(9,10-diphenyl-2-anthryl)-N,9 -Diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), 6,12-di Methoxy-5,11-diphenylchrysene, N,N,N',N',N'',N'',N' '',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetradecane anthracenamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl)phenyl] phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9- anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCz PA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b ]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4 -(9-phenyl-9H-fluoren-9-yl)-biphenyl-4'-yl}-ant Helical (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene 9,10-di(2-naphthyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA) , 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-Bu DNA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3, 3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4 '-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl) ) benzene (abbreviation: TPB3), 5,12-diphenyltetracene, 5,12-bis(biphenyl) phenyl-2-yl)tetracene, 9-(1-naphthyl)-10-[4-(2-naphthyl )phenyl]anthracene (abbreviation: αN-βNPAnth).

[0353] The organic compound used in combination with the phosphorescent material is one that has triplet excitation energy of the luminescent material. - (energy difference between the ground state and the triplet excited state) An organic compound may be selected.

[0354] A plurality of organic compounds (e.g., a first host material and a second host material) are mixed together to form an exciplex. When using a resist material (or assist material, etc.) in combination with a light-emitting substance, It is preferable to use a mixture of a plurality of organic compounds with a phosphorescent material (particularly an organometallic complex). .

[0355] By using this structure, the energy transfer from the exciplex to the luminescent material, Ex Using TET (Exciplex-Triplet Energy Transfer) It is possible to efficiently obtain light emission with high excitation power. A compound that easily forms an electron-transporting complex and easily accepts holes (hole transport material) is preferable. It is particularly preferable to combine it with a compound that readily accepts electrons (electron transporting material). The exciplex that emits light overlapping the wavelength of the lowest energy absorption band of the luminescent material is formed. By selecting a combination that allows for smooth energy transfer and efficient Specific examples of the hole transport material and the electron transport material are as follows: The material described in this embodiment can be used. It can simultaneously achieve high efficiency, low voltage operation, and long life.

[0356] As a combination of materials that form an exciplex, the HOMO level of the hole transporting material is It is preferable that the LUMO level of the hole transport material is equal to or higher than the HOMO level of the hole transport material. It is preferable that the LUMO level of the material is equal to or higher than the LUMO level of the electron transport material. The MO and HOMO levels were measured by cyclic voltammetry (CV). It can be derived from the electrochemical properties (reduction and oxidation potentials) of the materials used.

[0357] The formation of an exciplex changes the emission spectrum of, for example, a hole transport material or an electron transport material. The emission spectra of the mixed film were compared with those of the other materials. The spectrum shifts to longer wavelengths than the emission spectrum of each material (or a new peak appears on the longer wavelength side). This can be confirmed by observing the phenomenon of hole transport. Transient photoluminescence (PL) of electron transport materials, and the transient PL of the mixtures of these materials. The transient PL lifetime of the mixed film was compared, and it was found that the transient PL lifetime of the mixed film was longer than that of each material. Differences in transient response were observed, such as the presence of long-lived components or a larger proportion of delayed components. The above-mentioned transient PL can be confirmed by transient electroluminescence. In other words, the transient EL of the hole transport material, electron The transient EL of the transport material and the mixed film of these materials were compared to observe the difference in the transient response. The formation of the exciplex can also be confirmed by

[0358] Organic compounds that can be used in combination with phosphorescent materials include aromatic amines (aromatic Aromatic amine skeleton compounds), carbazole derivatives (compounds having a carbazole skeleton dibenzothiophene derivatives (thiophene derivatives), dibenzofuran derivatives (furan derivatives) derivatives), zinc and aluminum metal complexes, oxadiazole derivatives, triazole derivatives Conductors, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, Pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthrene Examples include loline derivatives.

[0359] Aromatic amines, carbazole derivatives, and dibenzothiophene are organic compounds with high hole transport properties. Specific examples of dibenzofuran derivatives include the following substances:

[0360] The carbazole derivatives include bicarbazole derivatives (e.g., 3,3'-bicarbazole, aromatic amines having a carbazolyl group, etc.

[0361] Specific examples of bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives) include: is 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9 '-Bis(1,1'-biphenyl-4-yl)-3,3'-bi-9H-carbazole, 9 ,9'-Bis(1,1'-biphenyl-3-yl)-3,3'-bi-9H-carbazole , 9-(1,1'-biphenyl-3-yl)-9'-(1,1'-biphenyl-4-yl) )-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthalene butyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCC P) and others.

[0362] Specific examples of aromatic amines having a carbazolyl group include PCBA1BP, N-(4 -biphenyl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl 9H-carbazole-3-amine (abbreviation: PCBiF), PCBBiF, PCBBi 1BP, PCBANB, PCBNBB, 4-phenyldiphenyl-(9-phenyl-9H -carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenyl) N,N'-diphenylbenzene-1,3-diamine (abbreviation PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9- Phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3 B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol- (3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), PCBASF , 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenyl Phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole) [9-phenylcarbazole (abbreviation: PC zPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazole-3-yl] 3-[N-(4- [diphenylaminophenyl]-N-phenylamino]-9-phenylcarbazole (abbreviation :PCzDPA1), 3,6-bis[N-(4-diphenylaminophenyl)-N-phenyl Nylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N -(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenyl Carbazole (abbreviation: PCzTPN2), 2-[N-(9-phenylcarbazole-3-yl) [N-phenylamino]spiro-9,9'-bifluorene (abbreviation: PCASF), N -[4-(9H-carbazol-9-yl)phenyl]-N-(4-phenyl)phenyl Aniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl] phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation Name: YGA2F), 4,4',4''-tris(carbazol-9-yl)triphenyl amine (abbreviation: TCTA).

[0363] In addition to the above, the carbazole derivatives include 3-[4-(9-phenanthryl)-phenanthroline]- PCPPn, PCPN, 1,3- Bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl) ) biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenyl Phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl )phenyl]benzene (abbreviation: TCPB), CzPA, etc.

[0364] Thiophene derivatives (compounds with a thiophene skeleton) and furan derivatives (compounds with a furan skeleton) Specifically, the compound (which is a compound that yl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl- 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene DBTFLP-III, 4-[4-(9-phenyl-9H-fluorene-9 -yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) Which compound has a thiophene skeleton, 4-{3-[3-(9-phenyl-9H-fluorene (9-phenyl)phenyl)dibenzofuran (abbreviation: mmDBFFLBi-II ) etc.

[0365] Specific examples of aromatic amines include 4,4'-bis[N-(1-naphthyl)-N-phenyl]amine and 4,4'-bis[N-(1-naphthyl)-N-phenyl]amine. N,N'-bis(3-methylamino)biphenyl (abbreviation: NPB or α-NPD) (1,1'-biphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl )-N-phenylamino]biphenyl (abbreviation: BSPB), BPAFLP, mBPAFL P, N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl -2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)a 9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N- (9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenyl amine (abbreviation: DPNF), 2-[N-(4-diphenylaminophenyl)-N-phenyl 2,7-bis[N- (4-diphenylaminophenyl)-N-phenylamino]-spiro-9,9'-bifluor Diphenylmethane (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl)-N -phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4'' -Tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4, 4',4''-Tris[N-(3-methylphenyl)-N-phenylamino]triphenyl m-MTDATA, N,N'-di(p-tolyl)-N,N'-diphenylamine Nyl-p-phenylenediamine (DTDPPA), 4,4'-bis[N-(4-diphenyl phenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4, 4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl) Nyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[ N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA 3B) etc.

[0366] An organic compound with high hole transport properties is poly(N-vinylcarbazole) (abbreviated as PVK ), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{ N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino} (phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylene)methacrylamide] (abbreviation: PTPDMA), Poly(phenyl)-N,N'-bis(phenyl)benzidine (abbreviation: Poly-TPD) Any polymeric compound can be used.

[0367] Specific examples of zinc and aluminum metal complexes, which are organic compounds with high electron transport properties, include: , tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4- Methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10 -hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis (2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), etc. Examples of the metal complex include a metal complex having a quinoline skeleton or a benzoquinoline skeleton.

[0368] In addition, bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: Zn PBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: Zn Metal complexes with oxazole or thiazole ligands such as BTZ can also be used. can be done.

[0369] Oxadiazole derivatives, triazole derivatives, and benzyl alcohols, which are organic compounds with high electron transport properties, Benzoimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline Specific examples of the thoroline derivatives include 2-(4-biphenylyl)-5-(4-tert-butanoyl)- 1,3-bis[5-(phenyl)-1,3,4-oxadiazole (abbreviation: PBD) (p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene OXD-7, 9-[4-(5-phenyl-1,3,4-oxadiazole- 2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl) (4-tert-butylphenyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazolium (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl) p-EtTAZ , 2-{4-[9,10-di(naphthalen-2-yl)-2-anthryl]phenyl}- 1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2,2',2''-(1 ,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole)(abbreviation Name: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl mDBTBIm-II, 4,4'-bis(5- Methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), bathophenanthrene Bphen, Bathocuproine (BCP), 2,9-bis(naphthalene) 4,7-diphenyl-1,10-phenanthroline (NBp hen), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h] Quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene -4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDB TBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3 -yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-( 3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]ky Noxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophene-4- (yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II) , and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quino Examples include xaline (abbreviation: 6mDBTPDBq-II).

[0370] Heterocyclic compounds with diazine skeletons and triazine skeletons, which are organic compounds with high electron transport properties, Specific examples of heterocyclic compounds having a pyridine skeleton include 4,6 -Bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPn P2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation :4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)] 2-[4-[3-(N-phenyl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), (phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl} -4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3 -(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl mPCCzPTzn-02), 2-[ 3'-(9,9-dimethyl-9H-fluoren-2-yl)-1,1'-biphenyl-3 -yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2 -[(1,1'-biphenyl)-4-yl]-4-phenyl-6-[9,9'-spirobiphenyl] (9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP-SFTzn ), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl ]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTz n), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl mBnfBPT Zn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridin 35DCzPPy, 1,3,5-tri[3-(3-pyridyl)phenyl]benzyl Examples include Benzene (abbreviated as TmPyPB).

[0371] An organic compound with high electron transport properties is poly(2,5-pyridinediyl) (abbreviated as PPy ), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3 ,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctylfluorene-2, 7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-B Polymer compounds such as Py can also be used.

[0372] TADF materials are materials that have an S1 level (energy level of the singlet excited state) and a T1 level (energy level of the triplet excited state). The difference between the triplet excited energy and the energy level of the excited state is small, and the It is a material that has the function of converting energy from fluorine to singlet excitation energy. Therefore, the triplet excitation energy can be converted to singlet excitation energy by a small amount of thermal energy. It is possible to upconvert (reverse intersystem crossing) the singlet excited state efficiently. It is also possible to convert triplet excitation energy into luminescence. The condition for efficient ionization is that the energy difference between the S1 level and the T1 level is 0 eV or more. 2 eV or less, preferably 0 eV or more and 0.1 eV or less. Delayed fluorescence in DF materials has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. Its lifetime is 10 -6 seconds or more, preferably 10 -3 More than a second.

[0373] In the case of an exciplex that forms an excited state with two types of substances, the difference between the S1 level and the T1 level is extremely small. TADF materials that can convert triplet excitation energy into singlet excitation energy It has the function as.

[0374] As an indicator of the T1 level, the phosphorescence spectrum observed at low temperatures (e.g., 77 K to 10 K) As for the TADF material, it is necessary to use a material that is close to the tail of the short wavelength side of the fluorescence spectrum. A line is drawn, and the energy of the wavelength of the extrapolated line is taken as the S1 level. When a tangent line is drawn at the tail and the energy of the wavelength of the extrapolated line is the T1 level, the S1 The difference between T1 and T2 is preferably 0.3 eV or less, and more preferably 0.2 eV or less. preferable.

[0375] The TADF material may be used as a guest material or as a host material.

[0376] TADF materials include, for example, fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include metal-containing porphyrins containing Pd, etc. For example, protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)) , mesoporphyrin-tin fluoride complex (abbreviated as SnF2(Meso IX)), hematopoietin Hematoxyl tin fluoride complex (abbreviated as SnF2 (Hemato IX)), coproporf Fluorine tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III- 4Me), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)) , etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), octaethene Examples include thylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0377] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-T RZ), PCCzPTzn, 2-[4-(10H-phenoxazin-10-yl)phenyl yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[ 4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5 -diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9- Dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: AC RXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl ] sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[ Acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA), 4-(9 '-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d ]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Bi-9H-carbazol-9-yl)phenyl]benzofuro[3,2-d]pyrimidine ( Abbreviation: 4PCCzPBfpm), 9-[3-(4,6-diphenyl-1,3,5-triphenylmethylsulfonyl] 9'-phenyl-2,3'-bi-9H-carbazole (abbreviation π-electron rich heteroaromatic rings and π-electron deficient heteroaromatic rings such as mPCCzPTzn-02 A heterocyclic compound having a ring can be used. The heterocyclic compound is a π-electron-rich heteroaromatic compound. Because it has an aromatic ring and a π-electron-deficient heteroaromatic ring, it has high electron transport properties and hole transport properties. It is preferable that an electron-withdrawing group such as a cyano group is bonded instead of the π-electron-deficient heteroaromatic ring. Alternatively, a π-electron deficient heteroaromatic ring may be used instead of the π-electron deficient heteroaromatic ring. Similarly, instead of a π-electron rich heteroaromatic ring, a π-electron rich heteroaromatic ring can be used. A skeleton can be used.

[0378] Among the skeletons with π-electron-deficient heteroaromatic rings, pyridine skeleton, diazine skeleton (pyrimidine The pyrazine, pyridazine, and triazine skeletons are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzo The furopyrazine and benzothienopyrazine skeletons have high electron-accepting properties and are highly reliable. preferable.

[0379] Among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, fluorine skeleton, The ethenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are stable and reliable. It is preferable that the compound has at least one of the above skeletons because of its excellent properties. skeleton, dibenzothiophene skeleton, indole skeleton, carbazole skeleton, indolocarbazo carbazole skeleton, bicarbazole skeleton, 3-(9-phenyl-9H-carbazol-3-yl) A -9H-carbazole skeleton is preferred.

[0380] In addition, a substance in which a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring are directly bonded is The donor property of the π-electron-rich heteroaromatic ring and the acceptor property of the π-electron-deficient heteroaromatic ring are both strong. This is particularly preferable because the energy difference between the singlet excited state and the triplet excited state is small.

[0381] As the π-electron-rich skeleton, an aromatic amine skeleton, a phenazine skeleton, or the like can be used. π-electron deficient skeletons include xanthene skeleton, thioxanthene dioxide skeleton, and oxadienyl skeleton. Azole skeleton, triazole skeleton, imidazole skeleton, anthraquinone skeleton, phenylboronic acid skeleton Boron-containing skeletons such as oran and boranthrene, nitriles such as benzonitrile and cyanobenzene aromatic rings or heteroaromatic rings having an aryl group or a cyano group, carbonyl skeletons such as benzophenone, A phosphine oxide skeleton, a sulfone skeleton, or the like can be used.

[0382] When using TADF materials as light-emitting materials, they are often used in combination with other organic compounds. In particular, it is possible to combine the above-mentioned host materials (hole transporting materials and electron transporting materials). When a TADF material is used, the S1 level of the host material is It is preferable that the T1 level of the host material is higher than the T1 level of the TADF material. It is preferable that the temperature is higher than the above level.

[0383] Alternatively, a TADF material may be used as the host material, and a fluorescent material may be used as the guest material. When an ADF material is used as a host material, the triplet excitation energy generated in the TADF material is is converted into singlet excitation energy by reverse intersystem crossing, and the energy is further transferred to the luminescent material. This movement can increase the light-emitting efficiency of the light-emitting device. The material acts as the energy donor and the luminescent material acts as the energy acceptor. Therefore, using a TADF material as a host material is advantageous in that it allows for the use of a fluorescent material as a guest material. This is very effective when using a material. In addition, in order to obtain high luminous efficiency, T The S1 level of the ADF material is preferably higher than the S1 level of the fluorescent material. The T1 level of the DF material is preferably higher than the S1 level of the fluorescent material. The T1 level of the DF material is preferably higher than the T1 level of the fluorescent emitting material.

[0384] In addition, T that exhibits emission that overlaps with the wavelength of the lowest energy absorption band of the fluorescent substance It is preferable to use an ADF material, which allows the TADF material to be converted into a fluorescent material. This is preferable because the transfer of excitation energy becomes smooth and light emission can be obtained efficiently.

[0385] In addition, singlet excitation energy is efficiently generated from triplet excitation energy by reverse intersystem crossing. For this to occur, it is preferable that carrier recombination occurs in the TADF material. The triplet excitation energy generated in the DF material is transferred to the triplet excitation energy of the fluorescent material. For this purpose, it is preferable that the fluorescent substance has a luminophore ( It is preferable that the compound has a protecting group around the π bond (the skeleton that causes light emission). A substituent having no carbon atoms is preferred, and a saturated hydrocarbon is preferred, specifically a hydrocarbon having 3 to 10 carbon atoms. The alkyl groups listed below, substituted or unsubstituted cycloalkyl groups with 3 to 10 carbon atoms, A trialkylsilyl group having 3 to 10 protecting groups is preferred, and a group having a plurality of protecting groups is more preferred. Substituents without π bonds have poor carrier transport function, and therefore, The distance between the TADF material and the luminophores of the fluorescent material can be reduced without significantly affecting carrier recombination. Here, the luminophore is the molecule that causes light emission in a fluorescent substance. The luminophore preferably has a skeleton with a π bond and contains an aromatic ring. Preferably, the aromatic ring has a condensed aromatic ring or a condensed heteroaromatic ring. Examples of the heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, and a phenanthren skeleton. Examples of the hydroxyazine skeleton include naphthalene skeleton and anthracene skeleton. skeleton, fluorene skeleton, chrysene skeleton, triphenylene skeleton, tetracene skeleton, pyrene skeleton perylene skeleton, coumarin skeleton, quinacridone skeleton, naphthobisbenzofuran skeleton Fluorescent materials that emit light with high fluorescence quantum yields are preferred.

[0386] <Electron transport layer> The electron transport layer 124 is a layer that transports electrons injected from the cathode 102 to the light-emitting layer 123. .

[0387] The electron transport layer 124 includes an electron transporting material and a first substance.

[0388] The electron transporting material has a higher ability to transport electrons than holes.

[0389] The electron transporting material used in the electron transport layer 124 has a highest occupied molecular orbital (HOMO) level of - It is preferably 6.0 eV or more.

[0390] The electron transporting material used in the electron transport layer 124 has a square root of the electric field strength [V / cm] of 600. The electron mobility in -7 cm 2 / Vs or more 1×10 -5 cm 2 / Vs or less It is preferable to use 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less It is even more preferable that:

[0391] The square root of the electric field strength [V / cm] of the electron transport material used in the electron transport layer 124 is 600. The electron mobility in the emitting layer 123 is such that the square root of the electric field strength [V / cm] of the host material is 600. It is preferable that the electron transport property in the electron transport layer 124 is smaller than that in the By lowering the temperature, the amount of electrons injected into the light-emitting layer 123 can be controlled. This can prevent the electron excess state from occurring.

[0392] The electron transporting material used in the electron transport layer 124 preferably has an anthracene skeleton. It is more preferable that the compound has an anthracene skeleton and a heterocyclic skeleton. As the nitrogen-containing five-membered ring skeleton, a pyrazole ring, an isopropyl ... Nitrogen-containing rings containing two heteroatoms, such as midazole, oxazole, and thiazole rings It is particularly preferred that the ring has a five-membered ring skeleton.

[0393] In addition, some of the electron transporting materials that can be used as the host material and the fluorescent materials The materials listed as materials that can be used as host materials in combination with optical materials are It can be used for the transport layer 124.

[0394] The electron transporting material used in the electron transport layer 124 is, for example, 2-{4-[9,10-di (Naphthalen-2-yl)-2-anthryl]phenyl}-1-phenyl-1H-benzo Imidazole (abbreviation: ZADN), 9-(1-naphthyl)-10-[4-(2-naphthyl) )phenyl]anthracene (abbreviation: αN-βNPAnth), 9-[4-(10-phenyl 7-[(9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carba Examples include ZOLL (abbreviation: cgDBCzPA).

[0395] In addition, the electron transporting material used in the electron transport layer 124 may be the same as that used in the light emitting layer. and an organic compound that can be used in combination with a fluorescent material. A host material or the like can be used.

[0396] The first substance is a metal, a metal salt, a metal oxide, or an organometallic salt.

[0397] Metals include alkali metals, alkaline earth metals, and rare earth metals. Examples of elements include Li, Na, K, Rb, Cs, Mg, Ca, Sr, and Ba.

[0398] Examples of metal salts include halides of the above metals and carbonates of the above metals. Specifically, LiF, NaF, KF, RbF, CsF, MgF2, CaF2, SrF2 , BaF2, LiCl, NaCl, KCl, RbCl, CsCl, MgCl2, CaCl 2, SrCl2, BaCl2, Li2CO3, Cs2CO3, etc.

[0399] Examples of metal oxides include oxides of the above metals. Specific examples include Li2O, Examples include Na2O, Cs2O, MgO, and CaO.

[0400] The organometallic salts include, for example, organometallic complexes.

[0401] The first substance is an organometallic complex having an alkali metal or alkaline earth metal. is preferred.

[0402] The first substance is a compound having a nitrogen- and oxygen-containing ligand and an alkali metal or alkaline earth metal. Preferably, the organometallic complex has the formula:

[0403] The first substance has a quinolinol ligand and an alkali metal or alkaline earth metal. It is preferable that the organometallic complex is an organometallic complex.

[0404] The organometallic complexes include 8-quinolinolatrium (abbreviation: Liq), 8-quinolinol sodium 8-quinolinolate (Naq), potassium 8-quinolinolate (Kq), bis(8 -quinolinolato) magnesium (abbreviation: Mgq2), bis(8-quinolinolato) zinc (abbreviation: (known as Znq2)

[0405] As the first substance, Liq is particularly preferable.

[0406] As shown in FIG. 18(D), the electron transport layer 124 is formed by the electron transport layer 124a on the light emitting layer 123 side. and an electron transport layer 124b on the cathode 102 side. The transport layer 124b preferably has a different concentration ratio of the electron transport material to the first substance. For example, the electron transport layer 124a may have a higher concentration of the first substance than the electron transport layer 124b. is preferred.

[0407] <Electron injection layer> The electron injection layer 125 is a layer that increases the efficiency of electron injection from the cathode 102. The difference between the work function value of the material and the LUMO level value of the material used in the electron injection layer 125 is It is preferable that it is small (within 0.5 eV).

[0408] The electron injection layer 125 may contain lithium, cesium, lithium fluoride (LiF), or cesium fluoride. CsF, calcium fluoride (CaF2), 8-quinolinolatolithium (abbreviation: Li q), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), LiPPy), 4-phenyl-2-(2-pyridinol)-3-pyridinolatolithium (abbreviation: LiPPy), Lithium diphenyl phenolate (LiPPP), lithium oxide (LiO x ), carbonate Use of alkali metals, alkaline earth metals, or their compounds, such as sodium. It is also possible to use rare earth metal compounds such as erbium fluoride (ErF3). Furthermore, an electride may be used in the electron injection layer. For example, a material in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum can be mentioned. The above-mentioned substances constituting the electron transport layer can also be used.

[0409] In addition, the electron injection layer may contain a composite material containing an electron transport material and a donor material (electron donor material). Such composite materials are formed by electron donors generating electrons in organic compounds. Therefore, it has excellent electron injection and electron transport properties. It is preferable that the material is excellent in transporting the generated electrons. Specifically, for example, the above-mentioned electron Transport materials (metal complexes, heteroaromatic compounds, etc.) can be used as electron donors. The electron donating agent may be any substance that exhibits electron donating properties to organic compounds. Alkaline earth metals and rare earth metals are preferred, and lithium, cesium, magnesium, calcium, Examples of the metal oxides include alkali metal oxides and alkali metal oxides. The lithium earth metal oxide is preferred, and lithium oxide, calcium oxide, barium oxide, etc. Lewis bases such as magnesium oxide can also be used. Organic compounds such as tetrathiafulvalene (abbreviation: TTF) can also be used.

[0410] <Charge generation layer> The charge generating layer 104 generates a charge when a voltage is applied between the anode 101 and the cathode 102. The organic layer 103 has a function of injecting electrons into the EL layer 103a and injecting holes into the EL layer 103b.

[0411] Even if the charge generation layer 104 contains a hole transport material and an acceptor material, The charge generating layer may have a structure containing a charge transporting material and a donor material. By forming 104, it is possible to suppress an increase in driving voltage when an EL layer is laminated. It is possible.

[0412] The hole transporting material, the acceptor material, the electron transporting material, and the donor material are The materials mentioned above can be used.

[0413] The light-emitting device of this embodiment is fabricated using a vacuum process such as a vapor deposition method or a spin-coil method. Solution processes such as the ink jet method and the ink jet method can be used. In this case, sputtering, ion plating, ion beam deposition, molecular beam deposition, Physical vapor deposition (PVD) methods such as vacuum deposition and chemical vapor deposition (CVD) methods can be used. In particular, the functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, For the electron injection layer, deposition methods (vacuum deposition, etc.), coating methods (dip coating, coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, flexographic (relief printing) method, It can be formed by a method such as a gravure method or a microcontact method.

[0414] The materials of the functional layers constituting the light-emitting device are not limited to the above-mentioned materials. As materials for the functional layer, polymer compounds (oligomers, dendrimers, polymers, etc.), intermediates low molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000), inorganic compounds As the quantum dot material, a colloidal material may be used. Quantum dot materials, alloy-type quantum dot materials, core-shell-type quantum dot materials, core-type quantum dot materials Materials such as PET can be used.

[0415] [Light-emitting device light-emitting model] A light emission model for the light emitting device of this embodiment will be described.

[0416] Here, the hole transport layer 122, the light emitting layer 123, and the electron transport layer 124 shown in FIG. 18(A) The light-emitting device has the configuration shown in Figure 18(A). The light emission model is not limited to this and can be applied to other configurations as well.

[0417] When the light-emitting layer 123 becomes an electron-excess state, as shown in FIG. 19(A), A light-emitting region 123-1 is formed in a localized region. The width of the light-emitting region 123-1 is narrow. Therefore, the light-emitting region 123 is concentrated in a local region. electrons (e - ) and Hall (h + ) and recombination occurs, accelerating deterioration. The electrons that could not recombine in the light-emitting layer 123 pass through the light-emitting layer 123, and the lifetime of the electrons increases. The life or luminous efficiency may be reduced.

[0418] On the other hand, in the light-emitting device according to one embodiment of the present invention, the electron transport property of the electron-transport layer 124 is reduced. By increasing the thickness, the width of the light-emitting region 123-1 in the light-emitting layer 123 can be increased. (FIG. 19(B) and FIG. 19(C)). By widening the width of the light-emitting region 123-1, the light The recombination area of ​​electrons and holes in the layer 123 can be dispersed. Therefore, a light emitting device having a long life and good luminous efficiency can be provided.

[0419] As shown in FIG. 19B, the light-emitting device of one embodiment of the present invention exhibits recrystallization at the initial stage of driving. In some cases, the overlapping region extends to the electron transport layer 124 side. The recombination region in 4 is shown as region 124-1. In the device, the hole injection barrier is small at the beginning of operation, and the electron transport of the electron transport layer 124 The relatively low transmittance allows light-emitting region 123-1 (i.e., recombination region) to 3, and a recombination region may also be formed in the electron transport layer 124.

[0420] In addition, the HOMO level of the electron transporting material contained in the electron transport layer 124 is -6.0 eV or higher. Since the temperature is relatively high, some of the holes reach the electron transport layer 124 and are regenerated in the electron transport layer 124. This phenomenon may occur when the host material (or is an assist material) and the electron transporting material contained in the electron transport layer 124, This can occur even when the difference is within 0.2 eV.

[0421] As shown in FIG. 19C, the light-emitting device of one embodiment of the present invention This changes the carrier balance, making it difficult for recombination to occur in the electron transport layer 124. The light-emitting region 123-1 remains formed in the entire light-emitting layer 123, and the electrons are recombined in the electron transport layer 124. By suppressing this, the energy of the recombined carriers can be effectively contributed to light emission. Therefore, the brightness can be increased compared to the initial driving stage. By offsetting the sudden drop in brightness that occurs when the device is first driven, known as initial deterioration, It is possible to provide a light-emitting device with small fluctuations and long operating life. , and the above light-emitting devices are recombined and site-tailored. This is sometimes called the injection structure (ReSTI structure).

[0422] Here, the light-emitting device of this embodiment and the light-emitting device for comparison will be compared with each other using FIG. 19(D). In FIG. 19(D), the normalized luminance with time is explained. The light dashed line represents the deterioration curve of the normalized luminance of the light-emitting device of this embodiment, and the thick dashed line represents the normalized luminance of the light-emitting device of this embodiment. 10 is a degradation curve of normalized luminance of a comparative light-emitting device.

[0423] As shown in FIG. 19(D), the light-emitting device of this embodiment and the comparative light-emitting device The slopes of the degradation curves of the normalized luminance are different from each other. The slope θ2 of the degradation curve of the light-emitting device for comparison is smaller than the slope θ1 of the degradation curve of the light-emitting device for comparison.

[0424] As shown in FIG. 19D, the light-emitting device of one embodiment of the present invention exhibits a constant current density. In the brightness degradation curve obtained by the driving test in That is, the luminance of the light-emitting device according to one embodiment of the present invention increases with time. This behavior may be due to the rapid deterioration at the beginning of operation (so-called initial deterioration). However, the light-emitting device according to one embodiment of the present invention is not limited to the above. For example, as shown by the thick dashed line in FIG. 19(D), there is no maximum value of brightness, in other words, Therefore, the gradient of the deterioration curve can be reduced without causing an increase in brightness. By configuring the device to exhibit this behavior, the initial deterioration of the light-emitting device can be reduced, and The operating life can be significantly extended.

[0425] When the differential of the deterioration curve having a maximum value is taken, there is a part where the value becomes 0. A light-emitting device having a zero portion in the differential of the deterioration curve is considered to be a light-emitting device according to one embodiment of the present invention. It can be called a vice.

[0426] In the light-emitting device according to one embodiment of the present invention, the electron transport layer 124 It is preferable to have a portion where the mixture ratio (concentration) of the transport material and the first substance is different. Typically, a mixture of an electron transporting material with a metal, a metal salt, a metal oxide, or an organometallic complex. It is preferable to have portions with different ratios (concentrations).

[0427] The concentration of the first substance in the electron transport layer 124 was measured by time-of-flight secondary ion mass spectrometry (T F-SIMS:Time-of-flight secondary ion mass This can be inferred from the amount of atoms and molecules detected by spectrometry. In the area where the mixture ratios of different materials are different, ToF-SIMS analysis The magnitude of each detected value corresponds to the abundance of the target atom or molecule. Therefore, by comparing the detected amounts of electron transport materials and organometallic complexes, it is possible to determine the amount of electron transport materials and organometallic complexes at high mixing ratios. You can get a small idea.

[0428] The content of the first substance in the electron transport layer 124 is higher on the cathode 102 side than on the anode 101 side. In other words, it is preferable that the concentration of the first substance is smaller than that of the cathode 102 side. It is preferable that the electron transport layer 124 is formed so as to rise toward the first side. That is, the electron transport layer 124 is arranged closer to the light emitting layer 123 than the area where the concentration of the electron transport material is high. In other words, the electron transport layer 124 has a low concentration of the transport material. The portion where the concentration of the first substance is high is located closer to the light emitting layer 123 than the portion where the concentration is low.

[0429] In the electron transport layer 124, the portion where the concentration of the electron transporting material is high (the portion where the concentration of the first substance is low) The electron mobility in the region (part) is 1 × 10 when the square root of the electric field strength [V / cm] is 600. -7 cm 2 / Vs or more 5×10 -5 cm 2 It is preferable that the value is equal to or less than / Vs.

[0430] For example, the content (concentration) of the first substance in the electron transport layer 124 is 20(A) and 20(B) are diagrams showing the configuration of the electronic import 20(C) and 20(D) show the case where there is no clear boundary in the transport layer 124. This represents a case where there is a clear boundary within layer 124.

[0431] When there is no clear boundary within the electron transport layer 124, the concentrations of the electron transporting material and the first substance are: 20(A) and 20(B), the electron transport layer 124 When there is a clear boundary between the electron transporting material and the first substance, the concentrations of the electron transporting material and the first substance are 0(D), the concentration of the electron transporting material and the first substance changes stepwise. The step-like change suggests that the electron transport layer 124 is composed of multiple layers. For example, FIG. 20(C) shows a case where the electron transport layer 124 has a two-layer laminated structure. 20(D) shows a case where the electron transport layer 124 has a three-layer laminated structure. ), and in FIG. 20(D), the dashed lines represent the boundary regions of multiple layers.

[0432] The change in the carrier balance in the light-emitting device according to one embodiment of the present invention is This is thought to be caused by a change in electron mobility.

[0433] In the light-emitting device according to one embodiment of the present invention, a concentration difference of the first substance exists in the electron transport layer 124. The electron transport layer 124 is disposed between the region with a low concentration of the first substance and the light-emitting layer 123. The first substance has a high concentration region. The cathode 102 is located closer to the cathode 102 than the other region.

[0434] The light-emitting device of one embodiment of the present invention having the above structure has an extremely long lifetime. If the initial brightness is 100%, the time it takes for the brightness to reach 95% (also known as LT95) is It can be made extremely long.

[0435] This embodiment mode can be combined with other embodiment modes as appropriate.

[0436] (Embodiment 3) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 21 and 22. do.

[0437] [Pixel circuit example 1] A display device according to one embodiment of the present invention includes a first pixel circuit having a light-receiving device and a light-emitting and a second pixel circuit having a device. The first pixel circuit and the second pixel circuit are They are arranged in a matrix.

[0438] FIG. 21(A) shows an example of a first pixel circuit having a light receiving device, and FIG. 21(B) shows a 1 illustrates an example of a second pixel circuit having a light-emitting device.

[0439] The pixel circuit PIX1 shown in FIG. 21(A) includes a light receiving device PD, a transistor M1, a transistor The transistor M2, the transistor M3, the transistor M4, and the capacitor C1 are included. An example is shown in which a photodiode is used as the light receiving device PD.

[0440] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the anode of the light receiving device PD is electrically connected to the wiring V2. The gate of the transistor M1 is electrically connected to either the source or the drain of the transistor M2. The other of the source and drain is electrically connected to one electrode of the capacitor C1. The source or drain of transistor M2 is electrically connected to the gate of transistor M3. The transistor M2 has a gate electrically connected to the wiring RES and a source or drain The other input is electrically connected to the wiring V2. One of the source and drain is electrically connected to the wiring V3, and the other of the source and drain is The gate of the transistor M4 is electrically connected to the wiring S E, and the other of the source or drain is electrically connected to the wiring OUT1.

[0441] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When D is driven with a reverse bias, a potential lower than the potential of the wire V1 is applied to the wire V2. The transistor M2 is controlled by a signal supplied to the wiring RES. The potential of the node connected to the gate of the transistor M3 is reset to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX. The function is to control the timing when the potential of the above nodes changes depending on the current flowing through the device PD. The transistor M3 serves as an amplifier transistor that outputs an output according to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE. A selection transistor is used to read out the output according to the potential of the board using an external circuit connected to wiring OUT1. It functions as a register.

[0442] The pixel circuit PIX2 shown in FIG. 21(B) includes a light-emitting device EL, a transistor M5, a transistor Here, the light emitting device EL and the transistor M6, the transistor M7, and the capacitor C2 are In particular, an example using an organic EL as the light-emitting device is shown. It is preferable to use an L device.

[0443] The transistor M5 has a gate electrically connected to the wiring VG and a source or a drain is electrically connected to the wiring VS, and the other of the source or drain is connected to one electrode of the capacitance C2, and the gate of the transistor M6. One of the drains is electrically connected to the wiring V4, and the other is connected to the anode of the light-emitting device EL, Electrically connected to either the source or the drain of the transistor M7. The gate is electrically connected to the wiring MS, and the other of the source and drain is connected to the wiring OUT2. The cathode of the light-emitting device EL is electrically connected to the wiring V5.

[0444] A constant potential is supplied to the wiring V4 and the wiring V5. The cathode side can be set to a higher potential than the anode side, and the cathode side can be set to a lower potential than the anode side. M5 is controlled by a signal supplied to the wiring VG, and controls the selection state of the pixel circuit PIX2. The transistor M6 also functions as a select transistor for It functions as a driving transistor that controls the current flowing through the light-emitting device EL according to the potential applied to the When the transistor M5 is in a conducting state, the potential supplied to the wiring VS is The potential is supplied to the gate of M6, and the luminance of the light-emitting device EL is controlled according to the potential. The transistor M7 is controlled by a signal supplied to the wiring MS. The potential between M6 and the light emitting device EL is output to the outside via the wiring OUT2. do.

[0445] The cathode of the light receiving device PD is electrically connected to the wiring V1, and the cathode of the light emitting device EL is electrically connected to the wiring V2. The wiring V5 to which the nodes are electrically connected can be in the same layer and at the same potential.

[0446] Here, the pixel circuit PIX1 has a transistor M1, a transistor M2, a transistor M3 and transistor M4, and transistor M5 and transistor M6 of pixel circuit PIX2. The transistor M6 and the transistor M7 each have a semiconductor layer in which a channel is formed. It is preferable to use a transistor using a metal oxide (oxide semiconductor).

[0447] A transistor using metal oxides with a wider band gap and lower carrier density than silicon The transistor can realize an extremely small off-state current. The charge stored in the capacitor connected in series with the transistor is maintained for a long period of time by the current. Therefore, it is possible to maintain the capacitance of the transistor connected in series to the capacitor C1 or the capacitor C2. The transistor M1, the transistor M2, and the transistor M5 are made of oxide semiconductors. It is preferable to use a transistor that has been oxidized. By using a transistor using a compound semiconductor, manufacturing costs can be reduced.

[0448] In addition, the transistors M1 to M7 have silicon as the semiconductor in which the channel is formed. In particular, transistors using single crystal silicon or polycrystalline silicon can also be used. By using highly crystalline silicon such as This is preferable because it allows for faster operation.

[0449] In addition, an oxide semiconductor is used for at least one of the transistors M1 to M7. In addition to using transistors, it is also possible to use silicon-based transistors. good.

[0450] In addition, in FIG. 21(A) and FIG. 21(B), the transistor is an n-channel transistor. Although the transistors are shown as p-channel transistors, p-channel transistors can also be used.

[0451] The transistors in the pixel circuit PIX1 and the transistors in the pixel circuit PIX2 are the same. It is preferable that they are formed side by side on one substrate. The transistors of the pixel circuit PIX1 and the transistors of the pixel circuit PIX2 are mixed and periodically arranged in one area. It is preferable to have a configuration in which the electrodes are arranged in a row.

[0452] In addition, a transistor and a capacitor are provided at a position overlapping the light receiving device PD or the light emitting device EL. It is preferable to provide one or more layers having one or both of the above. The effective area occupied by the circuit can be reduced, and a high-definition light receiving section or display section can be realized.

[0453] [Pixel circuit example 2] A block diagram of a pixel is shown in FIG. 22(A). The pixel shown in FIG. 22(A) has a switching transistor. Transistor (Switching Tr), Driving Transistor (Driving Tr), In addition to the light-emitting device (OLED), it also has memory.

[0454] The memory is supplied with data Data_W. In addition to the display data Data, data D When ata_W is supplied to the pixel, the current flowing through the light-emitting device increases, The device can express high brightness.

[0455] The display device according to one embodiment of the present invention captures an image using light emitted from a light-emitting device as a light source. The light source is a light-emitting device that detects the reflected light from the object. By driving the display data Data and the display data Data_W, high brightness can be achieved. The higher the brightness of the light-emitting device, the higher the signal-to-noise ratio. This can improve the sensitivity of the light detection by the light receiving device. can be done.

[0456] FIG. 22B shows a specific circuit diagram of the pixel circuit.

[0457] The pixel shown in FIG. 22B includes a transistor M1, a transistor M2, a transistor M3, It has a transistor M4, a capacitance Cs, a capacitance Cw, and a light emitting device EL.

[0458] Either the source or the drain of the transistor M1 is electrically connected to one electrode of the capacitance Cw. The other electrode of the capacitor Cw is connected to either the source or drain of the transistor M4. One of the source and drain of the transistor M4 is electrically connected to the transistor The gate of the transistor M2 is electrically connected to one of the electrodes of the capacitance Cs. The other electrode of the capacitor Cs is electrically connected to the source or drain of the transistor M2. One of the source and drain of the transistor M2 is electrically connected to , electrically connected to one of the source and drain of the transistor M3. One of the source and drain of M3 is electrically connected to one electrode of the light-emitting device EL. Each transistor shown in FIG. 22B has a back gate that is electrically connected to the gate. However, the connection of the back gate is not limited to this. It is not necessary to provide a port.

[0459] Here, the other electrode of the capacitance Cw, one of the source and drain of the transistor M4, The node to which the gate of the transistor M2 and one electrode of the capacitance Cs are connected is defined as a node NM. The other electrode of the capacitor Cs, one of the source and drain of the transistor M2, One of the source or drain of the transistor M3 and one of the electrodes of the light-emitting device EL are connected. The connected node is assumed to be node NA.

[0460] The gate of the transistor M1 is electrically connected to the wiring G1. The gate of the transistor M4 is electrically connected to the wiring G2. The other of the source and drain of the transistor M1 is electrically connected to the wiring DATA. The other of the source and drain of the transistor M3 is electrically connected to the wiring V0. The other of the source and drain of the transistor M4 is connected to the wiring DATA_W. are electrically connected.

[0461] The other of the source or drain of the transistor M2 is electrically connected to the wiring ANODE (high potential side). The other electrode of the light-emitting device EL is electrically connected to the wiring CATHODE (low potential side). are electrically connected.

[0462] The wiring G1 and the wiring G2 function as signal lines for controlling the operation of the transistors. The wiring DATA functions as a signal line that supplies image signals to the pixels. The wiring DATA_W is a signal line for writing data to the memory circuit MEM. The wiring DATA_W can function as a line. The wiring DATA_W supplies a correction signal to the pixel. The wiring V0 can function as a signal line. It also functions as a monitor line to acquire the voltage from the wiring V0 to the transistor M3. By supplying a specific potential to the other electrode of the capacitance Cs via It can also be stabilized.

[0463] The transistor M2, the transistor M4, and the capacitor Cw constitute a memory circuit MEM. The node NM is a storage node, and by turning on the transistor M4, the wiring DATA_W The signal supplied to the node NM can be written to the node NM. By using a transistor with a low current, the potential of the node NM can be maintained for a long time. do.

[0464] The transistor M4 is, for example, a transistor using a metal oxide in a channel formation region ( Hereinafter, an OS transistor can be used. The current can be made extremely low, and the potential of the node NM can be maintained for a long time. In this case, it is preferable to use OS transistors for other transistors constituting the pixel. For specific examples of metal oxides, see Embodiment 1.

[0465] OS transistors have a large energy gap and therefore exhibit extremely low off-state current. In addition, OS transistors have the following drawbacks: impact ionization, avalanche breakdown, and short-channel effects. The transistors that have Si in the channel formation region (hereinafter referred to as Si transistors) do not produce any effects. It has different characteristics from the conventional resistors and can form highly reliable circuits.

[0466] In addition, a Si transistor may be used for the transistor M4. It is also preferable to use Si transistors for the other transistors used.

[0467] Si transistors include transistors with amorphous silicon and crystalline silicon. A transistor having a silicon (typically low-temperature polysilicon), a transistor having a single crystal silicon Examples include transistors.

[0468] Furthermore, one pixel may have both an OS transistor and a Si transistor. .

[0469] In the pixel, the signal written to the node NM is the image signal supplied from the wiring DATA. The transistor M1 is capacitively coupled to the pixel It may have the ability to select

[0470] That is, if a desired correction signal is stored in the node NM, the correction signal is applied to the supplied image signal. The correction signal may be attenuated by elements on the transmission path. Therefore, it is preferable to generate the signal taking this attenuation into consideration.

[0471] By using the image signal and the correction signal to make the light emitting device emit light, the current flowing through the light emitting device is reduced. The current can be increased, and high brightness can be displayed. This allows the voltage to be applied as the gate voltage of the drive transistor, reducing the power consumption of the source driver. Since high-intensity light can be used as the light source, the sensitivity of the sensor can be improved. It can be increased.

[0472] This embodiment mode can be combined with other embodiment modes as appropriate.

[0473] (Fourth embodiment) In this embodiment, electronic devices of one embodiment of the present invention will be described with reference to FIGS. 23 to 25. do.

[0474] The electronic devices of this embodiment include the display device of one embodiment of the present invention. The display device of one embodiment of the present invention can be applied to the display portion. The device has a light detection function, so it can perform biometric authentication on the display or by touching the screen. That is, the receiving function of the display device of one embodiment of the present invention can detect a touch or a near touch. The optical device can function as part of a touch sensor or touch panel. This can improve the functionality and convenience of electronic devices.

[0475] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Personal computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, Digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples include audio equipment, sound reproduction devices, etc.

[0476] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) It may be possible.

[0477] The electronic device of this embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar - Functions to display date or time, etc., and to run various software (programs) Functions, wireless communication functions, and functions for reading programs or data recorded on recording media etc.

[0478] The electronic device 6500 shown in FIG. 23(A) is a mobile device that can be used as a smartphone. It is an information terminal.

[0479] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0480] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0481] FIG. 23B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0482] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. A display panel 6511, an optical member 6512, a touch panel 6513, and a protective member 6510 are arranged in a space surrounded by the display panel 6511, the optical member 6512, and a touch panel 6513. The sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged. .

[0483] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The cable 6513 is fixed by an adhesive layer (not shown).

[0484] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The FPC6515 is connected to the folded part. C6516 is mounted on the FPC6515. connected to a child.

[0485] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, extremely lightweight electronic devices can be realized. Because it is thin, it is possible to install a large-capacity battery 6518 while keeping the thickness of the electronic device small. In addition, a part of the display panel 6511 is folded back and the FPC 6515 is attached to the back of the pixel area. By arranging the connection portion, an electronic device with a narrow frame can be realized.

[0486] FIG. 24A shows an example of a television device. The television device 7100 includes a housing 71 The display unit 7000 is built into the housing 71. This shows a configuration that supports 01.

[0487] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0488] The television device 7100 shown in FIG. 24A is operated by an operation switch provided in the housing 7101. This can be done by a separate remote control 7111 or the display unit 700. The display unit 7000 may be provided with a touch sensor, and the television can be operated by touching the display unit 7000 with a finger or the like. The remote control operator 7111 may operate the remote control operator 7100. The remote control device 7111 may have a display unit that displays information output from the remote control device 7111. The channel and volume can be controlled using the operation keys or touch panel. , the image displayed on the display unit 7000 can be manipulated.

[0489] The television device 7100 includes a receiver, a modem, and the like. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be transmitted in one direction (sender to receiver) or two directions. It is also possible to communicate information in two directions (between a sender and a receiver, or between receivers). do.

[0490] FIG. 24(B) shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and a 213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being eaten.

[0491] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0492] 24(C) and 24(D) show examples of digital signage.

[0493] The digital signage 7300 shown in FIG. 24C includes a housing 7301, a display unit 7000, and and a speaker 7303. In addition, LED lamps, operation keys (power switch, It may have a control switch, connection terminals, various sensors, a microphone, etc. do.

[0494] FIG. 24(D) shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 is a display unit 7000 provided along the curved surface of a pillar 7401. It has.

[0495] 24C and 24D, the display device of one embodiment of the present invention is used in the display portion 7000. can be applied.

[0496] The larger the display unit 7000, the more information can be displayed at once. The wider the part 7000, the more noticeable it is, and for example, the more effective the advertisement. Cut.

[0497] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0498] Also, as shown in FIG. 24(C) and FIG. 24(D), the digital signage 7300 or Digital Signage 7400 is an information terminal device 731 such as a smartphone that a user has. 1 or information terminal 7411 via wireless communication. The advertisement information displayed on the display unit 7000 is transmitted to the information terminal 7311 or the information terminal 741. 1. Also, the information terminal 7311 or the information terminal 741 By operating 1, the display on the display unit 7000 can be switched.

[0499] In addition, the digital signage 7300 or the digital signage 7400 is equipped with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It can be done.

[0500] The electronic devices shown in FIGS. 25A to 25F include a housing 9000, a display portion 9001, a speaker 9002, and a touch panel 9003. 9003, operation keys 9005 (including the power switch or operation switch), connection terminal Child 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, Light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, (including the ability to measure flow, humidity, gradient, vibration, odor or infrared), It has models such as 9008.

[0501] The electronic devices shown in FIGS. 25A to 25F have various functions. Functions for displaying information (still images, videos, text images, etc.) on the display, touch panel function, Functions that display calendars, dates, or times, etc., and various software (programs) Therefore, the function of controlling the processing, the wireless communication function, the program recorded on the recording medium, or The electronic device can have the function of reading and processing data. The electronic device may have a variety of functions, but is not limited to these. Also, a camera or the like may be provided in the electronic device to take still images or videos and store them on a recording medium (external or built into the camera), and the function of displaying the captured image on the display unit. It may be possible.

[0502] The electronic devices shown in FIGS. 25A to 25F will be described in detail below.

[0503] 25(A) is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 is For example, it can be used as a smartphone. A portable information terminal 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. 9 shows an example in which three icons 9050 are displayed. 51 can also be displayed on another surface of the display unit 9001. An example of the information 9051 is Notifications of incoming emails, SNS messages, phone calls, etc., email and SNS subject lines, sender names , date and time, remaining battery power, antenna reception strength, etc. An icon 9050 or the like may be displayed in the position where is displayed.

[0504] 25(B) is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 is The display unit 9001 has a function of displaying information on three or more surfaces. 9 shows an example in which information 9053 and information 9054 are displayed on different surfaces. The user holds the mobile information terminal 9102 in the breast pocket of his / her clothes. The user can also check the information 9053 displayed in a position that can be observed from above. The user can check the display without taking the mobile information terminal 9102 out of his pocket, and can make a call, for example. You can decide whether or not to receive it.

[0505] FIG. 25C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 can communicate with, for example, a wireless headset. The mobile information terminal 9200 also has a connection terminal 9006 allows data transmission between other information terminals and charging. Charging may be performed by wireless power supply.

[0506] 25(D) to 25(F) are perspective views showing a foldable portable information terminal 9201. FIG. 25(D) shows the portable information terminal 9201 in an unfolded state, and FIG. 25(F) shows the portable information terminal 9201 in a folded state. Folded state, Figure 25(E) is in the process of changing from Figure 25(D) to Figure 25(F) The portable information terminal 9201 is highly portable when folded, and can be easily expanded. When opened, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the display device 201 is made up of three housings 900 connected by hinges 9055. For example, the display unit 9001 has a curvature radius of 0.1 mm or more and 150 mm or less. Can be bent downwards.

[0507] This embodiment mode can be combined with other embodiment modes as appropriate.

[0508] <Reference example> In this reference example, the HOMO level of an organic compound, LUM The calculation method of the O level and the electron mobility will be explained.

[0509] The HOMO and LUMO levels are calculated based on cyclic voltammetry (CV) measurements. It is possible.

[0510] In this reference example, an electrochemical analyzer (manufactured by BAS Co., Ltd., model The solution used in the CV measurement was the solvent. The solution was diluted with dehydrated dimethylformamide (DMF) (Aldrich, 99.8%, Cat. The supporting electrolyte was tetra-n-butylammonium perchlorate (Protein No. 22705-6). 10 ... The sample is dissolved to a concentration of 0.00 mmol / L, and then the sample is dissolved to a concentration of 2 mmol / L. The working electrode was a platinum electrode (B.A.S. Co., Ltd.). The auxiliary electrode was a platinum electrode (manufactured by BAS Co., Ltd., VC -3) and a Pt counter electrode (5 cm) as the reference electrode. The measurement was performed at room temperature (2 The scan rate during CV measurement was standardized to 0.1 V / sec. The oxidation potential Ea [V] and reduction potential Ec [V] of the electrode were measured. Ea is the oxidation-reduction potential. The potential of the reference electrode used in this example is the midpoint potential of the reduction-oxidation wave, and Ec is the midpoint potential of the reduction-oxidation wave. The potential energy of the electrode relative to the vacuum level is found to be -4.94 eV. Therefore, the HOMO level [eV] = -4.94-Ea, the LUMO level [eV] = -4 From the formula .94-Ec, the HOMO level and LUMO level can be calculated. do.

[0511] Electron mobility was measured by impedance spectroscopy (Impedance Spectroscopy) It can be measured using the IS method.

[0512] The carrier mobility of EL materials is measured by the transient photocurrent method (Time-of-flight: T OF method and space-charge-limited current The SCLC method, which uses the IV characteristics of the SCLC (internal voltage: SCLC), has been known for a long time. The TOF method requires a sample with a significantly thicker film than an actual organic EL device. The SCLC method has the disadvantage that the dependence of carrier mobility on electric field strength cannot be obtained. In this case, the thickness of the organic film required for measurement is thin, about several hundred nanometers, so a relatively small amount of EL material is used. It is possible to form films even in low temperatures, and the mobility can be measured with a film thickness close to that of an actual organic EL device. It is characterized by the fact that the dependence of carrier mobility on electric field strength can also be obtained.

[0513] In the IS method, a small sinusoidal voltage signal (V = V0 [exp(jωt)]) is applied to the EL device. Then, the current amplitude of the response current signal (I = I0exp[j(ωt+φ)]) is compared with the input signal. The impedance (Z=V / I) of the EL device is calculated from the phase difference. By applying a voltage varying from a high frequency voltage to a low frequency voltage to the EL device, the impedance Components with different relaxation times that contribute to the vibrational response can be separated and measured.

[0514] Here, the admittance Y (=1 / Z), which is the reciprocal of the impedance, is expressed as follows: It can be expressed as conductance G and susceptance B as follows:

[0515]

number

[0516] Furthermore, by the single charge injection model, The following equations (2) and (3) can be calculated: where g (equation (4)) is the differential conductance. In the formula, C is the capacitance, θ is the travel angle, ω represents the angular frequency. T is the transit time. The analysis uses the current equation, Poisson's equation, and the current continuity equation. The formula is used, ignoring the existence of diffusion current and trap levels.

[0517]

number

[0518] The -ΔB method is a method for calculating mobility from the frequency characteristics of capacitance. The ωΔG method is a method for calculating the mobility from the frequency characteristics of the carrier.

[0519] In practice, first, an electron-only device is fabricated using the material whose electron mobility is to be determined. A device designed to allow only electrons to flow as carriers is called a "single-device." In this specification, a method for calculating the mobility from the frequency characteristics of the capacitance (-ΔB method) will be explained. do.

[0520] The structure of the electron-only device fabricated for the measurement is shown in Figure 26, and its specific configuration is shown in Table 1. The electron-only device fabricated in this reference example has a first electrode 901 (anode) and a second electrode A first layer 910, a second layer 911, and a third layer 912 are disposed between the electrode 902 (cathode) and the The material for which the electron mobility is to be determined may be used as the material for the second layer 911. 2-{4-[9,10-di(naphthalen-2-yl)-2-anthryl]phenyl }-1-phenyl-1H-benzimidazole (abbreviation: ZADN) and 8-quinolinolatri The electron mobility of a 1:1 (weight ratio) co-evaporated film of lithium (abbreviated as Liq) was measured. In this reference example, 7-[4-(10-phenyl-9-anthryl)phenyl] -7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA) and 2-[3 '-(Dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quino The electron mobility of xaline (abbreviation: 2mDBTBPDBq-II) was also measured.

[0521] [Table 1]

[0522] The electron-only device was fabricated using a co-evaporated film of ZADN and Liq as the second layer 911. The current density-voltage characteristics are shown in FIG.

[0523] The impedance measurement was performed by applying a DC voltage in the range of 5.0V to 9.0V while applying an AC voltage. The measurement was carried out under the conditions of a voltage of 70 mV and a frequency of 1 Hz to 3 MHz. The capacitance is calculated from the admittance (equation (1) above), which is the reciprocal of the impedance. The frequency characteristics of the calculated capacitance C at an applied voltage of 7.0 V are shown in FIG.

[0524] The frequency characteristics of capacitance C are the space charge due to carriers injected by a minute voltage signal. This is because the load cannot completely follow the minute AC voltage, and a phase difference occurs in the current. Here, the transit time of the carriers in the film is the time T for the injected carriers to reach the counter electrode. It is defined and expressed by the following equation (5).

[0525]

number

[0526] The negative susceptance change (-ΔB) is the capacitance change -ΔC multiplied by the angular frequency ω (-ωΔ C) The lowest frequency peak frequency f' max (=ω max / 2π) and From equation (3), the relationship between the row time T and equation (6) below is derived.

[0527]

number

[0528] The frequency characteristics of -ΔB calculated from the above measurement (i.e., when the DC voltage is 7.0 V) are shown in Figure 2. 9. The lowest frequency peak frequency f' obtained from Figure 29 max is indicated by the arrow in the figure. did.

[0529] f' obtained from the above measurements and analysis max Therefore, the travel time T can be calculated (Equation (6)). From the above formula (5), the electron mobility at a voltage of 7.0 V can be calculated. By performing the same measurement at a DC voltage range of 5.0V to 9.0V, the electric field strength ) can be calculated, the dependence of the mobility on the electric field strength can also be measured.

[0530] The electric field strength dependence of the electron mobility of each organic compound finally obtained by the above calculation method. The characteristics are shown in Figure 30. From the figure, the square root of the electric field strength [V / cm] is 600 [V / cm m] 1 / 2 The electron mobility values ​​at this time are shown in Table 2. In Figure 30, the squares represent the The results of PA, triangles are the results of 2mDBTBPDBq-II, and diamonds are the co-evaporation of ZADN and Liq. The results of film deposition are shown.

[0531] [Table 2]

[0532] As described above, it is possible to calculate the electron mobility. , Takayuki Okachi et al. ”Japanese Journal of Applied Physics” Vol. 47, No. 12, 2008, See pp. 8965-8972. [Explanation of symbols]

[0533] C1 capacity C2 capacity G1 wiring G2 wiring L1 shortest distance L2 Shortest distance L3 Thickness L4 sum M1 transistor M2 transistor M3 transistor M4 transistor M5 transistor M6 transistor M7 transistor OUT1 wiring OUT2 wiring PIX1 pixel circuit PIX2 pixel circuit V0 wiring V1 wiring V2 wiring V3 wiring V4 wiring V5 wiring 10 Display device 10A display device 10B Display device 10C display device 10D display device 10E display device 10F display device 10G display device 10H display device 10J display device 10K display device 10L display device 10M display device 10N display device 10P display device 10Q display device 21 Light 21B light 21G light 21R light 22 light 23 light 23a Stray light 23b Stray light 23c stray light 23d stray light 24 Reflected light 41 Transistor 42 transistors 42B transistor 42G transistor 42R transistor 50A display device 50B display device 51 PCB 52 fingers 53 Layer having a light receiving device 55 Layer with transistors 57 Layer with light-emitting device 59 Circuit Board 100A display device 100B display device 100C display device 101 Anode 102 Cathode 103 EL layer 103a EL layer 103b EL layer 104 Charge generation layer 110 Light receiving device 112 Common layer 113 Light-emitting layer 114 Common layer 115 Common electrode 116 Protective layer 116a Inorganic insulating layer 116b Organic insulating layer 116c Inorganic insulating layer 121 Hole injection layer 122 Hole transport layer 122a Hole transport layer 122b Hole transport layer 123 Light-emitting layer 123-1 Luminous area 124 Electron transport layer 124-1 area 124a Electron transport layer 124b Electron transport layer 125 Electron injection layer 142 Adhesive layer 143 Space 146 Lens Array 149 Lens 151 PCB 152 PCB 153 PCB 154 PCB 155 Adhesive layer 156 Adhesive layer 157 Insulating Layer 158 Light blocking layer 159 Resin layer 159p aperture 160 void 162 Display section 164 circuits 165 Wiring 166 Conductive Layer 167 Conductive Layer 168 Conductive Layer 169B Conductive layer 169G conductive layer 169R Conductive layer 172 FPC 173 IC 181 pixel electrode 182 buffer layer 183 Active layer 184 Buffer Layer 190 Light-emitting devices 190B Light-emitting devices 190G Light Emitting Device 190R Light Emitting Device 191 pixel electrode 191B Pixel electrode 191G pixel electrode 191R pixel electrode 192 buffer layer 193 Light-emitting layer 193B Light-emitting layer 193G Light-emitting layer 193R luminescent layer 194 Buffer Layer 197 Optical adjustment layer 197B Optical adjustment layer 197G optical adjustment layer 201 Transistor 202 Transistor 203 Transistor 204 Connection 205 Transistor 206 Transistor 207 Transistor 208 Transistor 209 Transistor 210 Transistor 211 Insulating layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 214a Insulating layer 214b insulating layer 215 Insulating Layer 216 Bulkhead 217 Bulkhead 219a Light blocking layer 219b Spacer 219c side wall 220 Gap 221 Conductive layer 222a conductive layer 222b Conductive layer 223 Conductive Layer 225 Insulating Layer 228 areas 230 areas 231 Semiconductor layer 231i Channel formation region 231n Low resistance region 242 Connection Layer 901 Electrode 902 Electrode 910 First Layer 911 Second Layer 912 Third Layer 6500 Electronic equipment 6501 Housing 6502 Display section 6503 Power button 6504 Button 6505 Speaker 6506 Microphone 6507 Camera 6508 Light source 6510 Protective materials 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed Circuit Board 6518 Battery 7000 Display 7100 Television equipment 7101 Housing 7103 Stand 7111 Remote control device 7200 Notebook Personal Computer 7211 Case 7212 keyboard 7213 Pointing Device 7214 External connection port 7300 Digital Signage 7301 Housing 7303 Speaker 7311 Information terminals 7400 Digital Signage 7401 Pillar 7411 Information terminals 9000 chassis 9001 Display section 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9101 Mobile Information Terminal 9102 Mobile Information Terminal 9200 Mobile Information Terminal 9201 Mobile Information Terminal

Claims

[Claim 1] a light receiving device and a light emitting device; the light-receiving device has a first pixel electrode, an active layer, and a common electrode; the light-emitting device comprises a second pixel electrode, a hole injection layer, a light-emitting layer, an electron transport layer, and the common electrode; the active layer is located on the first pixel electrode; the active layer comprises a first organic compound; the light-emitting layer is located on the second pixel electrode; the light-emitting layer has a second organic compound different from the first organic compound; the common electrode has a portion overlapping with the first pixel electrode via the active layer and a portion overlapping with the second pixel electrode via the light-emitting layer, the hole injection layer is in contact with the electrode that functions as an anode out of the second pixel electrode and the common electrode; the hole injection layer comprises a first compound and a second compound; the electron transport layer comprises an electron transporting material, the first compound has an electron accepting property for the second compound, the HOMO level of the second compound is −5.7 eV or more and −5.4 eV or less; The electron transporting material has a HOMO level of −6.0 eV or higher and an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. －７ cm ２ / Vs or more 5×10 －５ cm ２ / Vs or less.

Images