Release agent composition

Abstract

To provide a release agent composition which is excellent in a dissolution rate of a resin mask.SOLUTION: A release agent composition contains hydroxylamine (component A), an alkali agent (component B) other than the component A, an organic solvent (component C) other than the component A and the component B, and water (component D), wherein a mass ratio C / A of the component C to the component A is more than 2.25 and 50 or less, and a mass ratio D / A of the component D to the component A is less than 11.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present disclosure relates to a stripper composition, a method for stripping a resin mask, and a method for manufacturing an electronic component. [Background technology]

[0002] In recent years, personal computers and various electronic devices have become increasingly power-efficient, faster, and more compact, and the wiring on the package substrates and other components they are equipped with has become increasingly finer every year. Until now, metal masking has been the primary method used to form such fine wiring and connection terminals such as pillars and bumps, but due to its limited versatility and the difficulty of adapting to the miniaturization of wiring, new methods are being adopted.

[0003] One new method is to use a dry film resist as a thick resin mask instead of a metal mask. This resin mask is finally stripped and removed, and an alkaline stripping composition (strip cleaner) is used for this purpose.

[0004] For example, Patent Document 1 proposes a method for removing a resin mask having a thickness of 100 μm or more from a substrate having the resin mask thereon, using a cleaning composition containing a quaternary ammonium hydroxide, hydroxylamine, potassium hydroxide, and water, with the water content being 60 mass % or more. Patent Document 2 proposes a color resist stripping liquid composition containing a hydroxide such as an inorganic salt hydroxide, at least one compound selected from C1-C4 alkyl group alkylene glycol ethers and alkylene glycols, hydroxylamine, alkoxyalkylamine, and water. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2023-111873 [Patent Document 2] TW200910027 Summary of the Invention [Problem to be solved by the invention]

[0006] When forming fine wiring on a printed circuit board or the like, the stripper composition is required to have high resin mask removability (stripping ability) in order to reduce not only the residue of the resin mask but also the residue of auxiliary agents contained in the solder or plating solution used in forming the fine wiring, pillars, and bumps. As wiring, pillars, and bumps become finer, the spaces between them also become finer, making it difficult to remove resin masks present in fine gaps, and therefore stripping compositions are required to have higher resin mask removability (stripping ability). In particular, dissolving the resin mask is an effective method for stripping and removing resin masks present in fine gaps, but it is not easy to dissolve a resin mask made of a high-molecular-weight resin. In addition, if the dissolution rate (dissolution rate) of the stripped resin mask is slow, there is also the problem that the stripped resin mask may re-adhere to the substrate.

[0007] Therefore, the present disclosure provides a stripping agent composition that has an excellent dissolution rate for a resin mask, a method for stripping a resin mask, and a method for manufacturing an electronic component. [Means for solving the problem]

[0008] In one aspect, the present disclosure relates to a stripper composition comprising hydroxylamine (component A), an alkaline agent other than component A (component B), an organic solvent other than components A and B (component C), and water (component D), wherein the mass ratio C / A of component C to component A is greater than 2.25 and not more than 50, and the mass ratio D / A of component D to component A is less than 11.

[0009] In one aspect, the present disclosure relates to a method for stripping a resin mask, comprising a step of stripping the resin mask from a substrate having the resin mask thereon using the stripper composition of the present disclosure.

[0010] In one aspect, the present disclosure relates to a method for manufacturing an electronic component, including the resin mask stripping method of the present disclosure. [Effects of the Invention]

[0011] According to one aspect of the present disclosure, a stripper composition having an excellent dissolution rate for a resin mask can be provided. DETAILED DESCRIPTION OF THE INVENTION

[0012] [Removal agent composition] In one or more embodiments, the present disclosure is based on the finding that the use of an alkaline stripper containing hydroxylamine and an organic solvent in a specific ratio increases the dissolution rate of a resin mask and enables the resin mask to be removed (peeled off) efficiently.

[0013] In one aspect, the present disclosure relates to a stripper composition (hereinafter also referred to as the “stripper composition of the present disclosure”) that contains hydroxylamine (component A), an alkaline agent other than component A (component B), an organic solvent other than components A and B (component C), and water (component D), in which the mass ratio C / A of component C to component A is more than 2.25 and not more than 50, and the mass ratio D / A of component D to component A is less than 11.

[0014] According to the present disclosure, a stripper composition having an excellent dissolution rate for a resin mask can be provided.

[0015] Although the details of the mechanism of action by which the effects of the present disclosure are manifested are still unclear, it is presumed as follows. Generally, to remove a resin mask present in the gaps of a fine metal pattern, it is effective to dissolve the resin mask, but it is not easy to dissolve a resin mask composed of a high molecular weight resin. However, the stripper composition of the present disclosure contains hydroxylamine (component A), an alkali agent (component B), an organic solvent (component C), and water (component D). By setting the content ratio of hydroxylamine (component A) to the organic solvent (component C) and the content ratio of hydroxylamine (component A) to the water (component D) within a specific range, it is believed that the alkali agent (component B) penetrates into the resin mask to cut the crosslinked portion of the resin mask, and the hydroxylamine (component A) penetrates into the resin mask to promote the dissociation of the alkali-soluble resin contained in the resin mask, thereby improving the dissolution rate of the resin mask. However, the present disclosure need not be construed as being limited to this mechanism.

[0016] In one or more embodiments, the stripper composition of the present disclosure is a stripper composition for stripping a resin mask. In the present disclosure, stripping a resin mask may include dissolving the resin mask, removing the resin mask, and cleaning the resin mask. By using the stripper composition of the present disclosure for cleaning a substrate having a resin mask, the resin mask can be efficiently removed with an excellent dissolution rate. Furthermore, by using the stripper composition of the present disclosure for cleaning electronic components such as electronic circuit boards having a resin mask, high-quality electronic components can be obtained with a high yield.

[0017] In the present disclosure, a resin mask is a mask for protecting the surface of a material from treatments such as etching, plating, heating, etc., i.e., a mask that functions as a protective film. In one or more embodiments, the resin mask may be a resist layer after exposure and development steps, a resist layer that has been subjected to at least one of exposure and development (hereinafter also referred to as "exposed and / or developed"), or a hardened resist layer. Furthermore, resin masks are formed using resists whose physical properties, such as solubility in a developer, change when exposed to light or electron beams. Resists are broadly divided into negative and positive types based on how they react with light or electron beams. Negative resists have the property of decreasing their solubility in a developer when exposed to light, and the exposed portion of a layer containing negative resist (hereinafter also referred to as a "negative resist layer") is used as a resin mask after exposure and development. Positive resists have the property of increasing their solubility in a developer when exposed to light, and the exposed portion of a layer containing positive resist (hereinafter also referred to as a "positive resist layer") is removed after exposure and development, and the unexposed portion is used as a resin mask. By using a resin mask with such properties, fine connections on circuit boards, such as metal wiring, metal pillars, and solder bumps, can be formed. In one or more embodiments, the resin material for forming the resin mask may be a film-like photosensitive resin, a resist film, or a photoresist. A general-purpose resist film may be used, and a negative resist film is preferred. The resin mask may be, for example, an acrylic acid-based polymer film. When high-rise pillars need to be formed, it is preferable to use a resist (resin mask) having a thickness of, for example, more than 100 μm as the resin mask. Furthermore, when preparing a resist pattern having a high aspect ratio, which is thick relative to the wiring width, pillar pitch, or bump pitch, it is preferable to use a resist with high hardness as the resin mask. Here, a resist pattern having a high aspect ratio, which is thick relative to the wiring width, pillar pitch, or bump pitch, is, for example, a copper pillar pattern formed by patterning a resist to form cylindrical holes and then depositing copper in the holes by copper plating.

[0018] (Component A: Hydroxylamine) The stripper composition of the present disclosure contains hydroxylamine (hereinafter also referred to as "component A"). The content of Component A in the stripper composition of the present disclosure is preferably 3% by mass or more, more preferably 5% by mass or more, from the viewpoints of improving the dissolution rate of the resin mask (resist), miscibility, and resin mask removability (stripping ability), and from the same viewpoints, it is preferably 30% by mass or less, more preferably 20% by mass or less, and more preferably 15% by mass or less. More specifically, the content of Component A in the stripper composition of the present disclosure is preferably 3% by mass or more and 30% by mass or less, more preferably 5% by mass or more and 20% by mass or less, and even more preferably 5% by mass or more and 15% by mass or less.

[0019] (Component B: Alkaline agent) The stripper composition of the present disclosure contains an alkaline agent (hereinafter also referred to as "component B") other than component A. Component B may be one type or a combination of two or more types. In one or more embodiments, from the viewpoints of improving the dissolution rate of the resin mask (resist), miscibility, and removability (stripping) of the resin mask, Component B is preferably an alkali containing at least one selected from quaternary ammonium hydroxide (Component B1), alkanolamine (Component B2), and inorganic metal hydroxide (Component B3); more preferably an alkali containing Component B2, an alkali containing Components B1 and B2, or an alkali containing Components B1, B2, and B3; and even more preferably an alkali consisting of Components B1 and B2, or an alkali consisting of Components B1, B2, and B3. In one or more embodiments, from the same viewpoints, the total content of Components B1 and B2 in Component B is preferably 3% by mass or more, more preferably 5% by mass or more, and even more preferably 7% by mass or more. In one or more embodiments, from the same viewpoint, the total content of components B1 and B2 in component B is preferably 50% by mass or more, or 60% by mass or more, or 70% by mass or less, and preferably 100% by mass or less, or 90% by mass or less. In one or more embodiments, from the same viewpoint, the total content of components B1, B2, and B3 in component B is preferably 5% by mass or more, more preferably 7% by mass or more, and even more preferably 9% by mass or more. In one or more embodiments, from the same viewpoint, the total content of components B1, B2, and B3 in component B is preferably 50% by mass or more, or 70% by mass or more, or 90% by mass or more, and preferably 100% by mass or less.

[0020] <Component B1: Quaternary ammonium hydroxide> From the viewpoint of resin mask removability, the quaternary ammonium hydroxide (component B1) is preferably a quaternary ammonium hydroxide having a total of 10 or less carbon atoms, more preferably tetramethylammonium hydroxide. Component B1 may be one type or a combination of two or more types. When the stripper composition of the present disclosure contains component B1, the content of component B1 in the stripper composition of the present disclosure is preferably 0.1% by mass or more, more preferably 1% by mass or more, and even more preferably 1.5% by mass or more from the viewpoint of improving resin mask removability (removal performance), and is preferably 10% by mass or less, more preferably 8% by mass or less, and even more preferably 7% by mass or less from the viewpoint of improving resin mask removability (removal performance) and waste liquid treatability. More specifically, the content of component B1 in the stripper composition of the present disclosure is preferably 0.1% by mass or more and 10% by mass or less, more preferably 1% by mass or more and 8% by mass or less, and even more preferably 1.5% by mass or more and 7% by mass or less. When component B1 is a combination of two or more types, the content of component B1 refers to the total content thereof.

[0021] <Component B2: Alkanolamine> As the alkanolamine (component B2), from the viewpoint of improving the removability (peelability) of the resin mask, preferably an alkanolamine having a total of 6 or less carbon atoms, more preferably monoethanolamine, is used. Component B2 may be one type, or two or more types may be combined. When the stripper composition of the present disclosure contains component B2, the content of component B2 in the stripper composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, even more preferably 3% by mass or more, and even more preferably 7% by mass or more from the viewpoint of improving resin mask removability (removability). Furthermore, from the viewpoints of improving resin mask removability (removability), waste liquid treatability, and suppressing damage to the substrate resin and the substrate metal, the content of component B2 is preferably 20% by mass or less, more preferably 15% by mass or less, and even more preferably 13% by mass or less. More specifically, the content of component B2 in the stripper composition of the present disclosure is preferably 0.1% by mass or more and 20% by mass or less, more preferably 0.5% by mass or more and 15% by mass or less, even more preferably 3% by mass or more and 13% by mass or less, and even more preferably 7% by mass or more and 13% by mass or less. When component B2 is a combination of two or more types, the content of component B2 refers to the total content thereof.

[0022] <Component B3: Inorganic metal hydroxide> Examples of inorganic metal hydroxides (component B3) include alkali metal hydroxides, and from the viewpoint of improving the removability (peelability) of the resin mask, preferably at least one selected from lithium hydroxide, sodium hydroxide, and potassium hydroxide, more preferably at least one of sodium hydroxide and potassium hydroxide, and even more preferably potassium hydroxide. Component B3 may be one type or a combination of two or more types. When the stripper composition of the present disclosure contains component B3, the content of component B3 in the stripper composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1% by mass or more, from the viewpoint of improving resin mask removability (removal performance); and from the viewpoint of improving resin mask removability (removal performance) and miscibility, it is preferably 5% by mass or less, more preferably 4% by mass or less, and even more preferably 3% by mass or less. More specifically, the content of component B3 in the stripper composition of the present disclosure is preferably 0.1% by mass or more and 5% by mass or less, more preferably 0.5% by mass or more and 4% by mass or less, and even more preferably 1% by mass or more and 3% by mass or less. When component B3 is a combination of two or more types, the content of component B3 refers to the total content thereof.

[0023] The content of Component B in the stripper composition of the present disclosure is preferably 5% by mass or more, more preferably 10% by mass or more, from the viewpoint of improving the removability (removal property) of the resin mask, and from the same viewpoint, is preferably 25% by mass or less, more preferably 20% by mass or less. More specifically, the content of Component B in the stripper composition of the present disclosure is preferably 5% by mass or more and 25% by mass or less, more preferably 10% by mass or more and 20% by mass or less.

[0024] The mass ratio A / B (content of component A / content of component B) of hydroxylamine (component A) to alkaline agent (component B) in the stripper composition of the present disclosure is preferably 0.2 or more, more preferably 0.5 or more, from the viewpoints of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, and from the same viewpoints, is preferably 2 or less, more preferably 1 or less. More specifically, the mass ratio A / B is preferably 0.2 or more and 2 or less, more preferably 0.5 or more and 1 or less. When component B contains an alkanolamine (component B2), the mass ratio A / B2 (hydroxylamine content / alkanolamine content) of hydroxylamine (component A) to alkanolamine (component B2) is preferably 0.3 or more, more preferably 0.4 or more, and even more preferably 0.5 or more, from the viewpoints of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, and from the same viewpoints, is preferably 2.0 or less, more preferably 1.7 or less, and even more preferably 1.5 or less. More specifically, the mass ratio A / B2 is preferably 0.3 or more and 2.0 or less, more preferably 0.4 or more and 1.7 or less, and even more preferably 0.5 or more and 1.5 or less.

[0025] (Component C: organic solvent) The stripper composition of the present disclosure contains an organic solvent (hereinafter also referred to as "component C") other than component A and component B. Component C may be one type or a combination of two or more types. From the viewpoints of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, Component C preferably contains an organic solvent having a hydroxyl group, and more preferably is an organic solvent having a hydroxyl group. From the same viewpoints, the content of the organic solvent having a hydroxyl group in Component C is preferably 20% by mass or more, more preferably 30% by mass or more, and even more preferably 40% by mass or more. Examples of organic solvents having a hydroxyl group include glycol ethers. Examples of glycol ethers include compounds having a structure in which 1 to 3 moles of ethylene glycol are added to an alcohol having 1 to 8 carbon atoms, such as at least one selected from diethylene glycol monobutyl ether (BDG), ethylene glycol monobenzyl ether, diethylene glycol monohexyl ether, ethylene glycol monophenyl ether, diethylene glycol diethyl ether, and triethylene glycol (TEG). Among these, from the viewpoints of improving the dissolution rate of the resin mask (resist) and improving the removability (stripping ability) of the resin mask, at least one of diethylene glycol monobutyl ether (BDG) and triethylene glycol (TEG) is preferred, and a combination of diethylene glycol monobutyl ether (BDG) and triethylene glycol (TEG) is more preferred. From the same viewpoint, component C preferably contains a glycol ether, and more preferably contains diethylene glycol monobutyl ether (BDG).

[0026] The content of component C in the stripper composition of the present disclosure is preferably 20% by mass or more, more preferably 30% by mass or more, and even more preferably 40% by mass or more, from the viewpoints of improving the dissolution rate of the resin mask (resist), improving the removability (stripping ability) of the resin mask, stability, and odor suppression. From the same viewpoints, it is preferably 80% by mass or less, more preferably 70% by mass or less, and even more preferably 65% ​​by mass or less. More specifically, the content of component C in the stripper composition of the present disclosure is preferably 20% by mass or more and 80% by mass or less, more preferably 30% by mass or more and 70% by mass or less, and even more preferably 40% by mass or more and 65% by mass or less. When component C is a combination of two or more types, the content of component C refers to the total content thereof.

[0027] The mass ratio C / A (content of component C / content of component A) of the organic solvent (component C) to the hydroxylamine (component A) in the stripper composition of the present disclosure is greater than 2.25, preferably 2.5 or greater, more preferably 3 or greater, and even more preferably 3.5 or greater, from the viewpoint of improving the dissolution rate of the resin mask (resist), and from the same viewpoint, is 50 or less, preferably 20 or less, and more preferably 10 or less. More specifically, the mass ratio C / A is greater than 2.25 and 50 or less, preferably 2.5 or greater and 50 or less, more preferably 3 or greater and 20 or less, and even more preferably 3.5 or greater and 10 or less.

[0028] (Component D: water) In one or more embodiments, the stripper composition of the present disclosure contains water (hereinafter also referred to as "component D"). Examples of component D include ion-exchanged water, RO water, distilled water, pure water, and ultrapure water.

[0029] The content of component D in the stripper composition of the present disclosure can be the remainder excluding components A, B, C, and optional components (other components described below). For example, from the viewpoints of improving the dissolution rate of the resin mask, miscibility, and resin mask removability (stripping ability), the content of component D in the stripper composition of the present disclosure is preferably 3% by mass or more, more preferably 6% by mass or more, and even more preferably 9% by mass or more. From the same viewpoints, the content is preferably 30% by mass or less, more preferably 25% by mass or less, and even more preferably 15% by mass or less. More specifically, the content of component D in the stripper composition of the present disclosure is preferably 3% by mass or more and 30% by mass or less, more preferably 6% by mass or more and 25% by mass or less, and even more preferably 9% by mass or more and 15% by mass or less.

[0030] In the stripper composition of the present disclosure, the mass ratio D / A of water (component D) to hydroxylamine (component A) (content of component D / content of component A) is less than 11, preferably less than 6, more preferably 5 or less, and even more preferably 3 or less, from the viewpoint of improving the dissolution rate of the resin mask, and from the viewpoint of miscibility, is preferably 0.1 or more, more preferably 0.3 or more, and even more preferably 0.5 or more. More specifically, the mass ratio D / A is preferably 0.1 or more and less than 11, more preferably 0.3 or more and less than 6, more preferably 0.5 or more and less than 5, and even more preferably 0.5 or more and less than 3.

[0031] The mass ratio C / D (content of component C / content of component D) of the organic solvent (component C) to water (component D) in the stripper composition of the present disclosure is preferably 60 / 40 or more and 100 / 0 or less, more preferably 65 / 35 or more and 95 / 5 or less, and even more preferably 80 / 20 or more and 90 / 10 or less, from the viewpoints of improving the dissolution rate of the resin mask, miscibility, and removability (stripping ability) of the resin mask.

[0032] In the present disclosure, the "content of each component of the stripper composition" refers to the content of each component at the time of use, i.e., at the time when the stripper composition starts to be used for cleaning (resin mask removal treatment). In one or more embodiments, the content of each component in the stripper composition of the present disclosure can be considered to be the blending amount of each component in the stripper composition of the present disclosure.

[0033] (Other ingredients) In one or more embodiments, the stripper composition of the present disclosure may further contain other components as necessary to the extent that the effects of the present disclosure are not impaired. Examples of other components include amines other than Component A, alkaline agents other than Components A and B, solvents other than Component C, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, polymeric compounds, solubilizers, antioxidants, preservatives, antifoaming agents, antibacterial agents, etc. When the release agent composition of the present disclosure contains other components, the content of the other components in the release agent composition of the present disclosure is preferably from 0% by mass to 2% by mass, more preferably from 0% by mass to 1.5% by mass, even more preferably from 0% by mass to 1.3% by mass, and still more preferably from 0% by mass to 1% by mass.

[0034] In one or more embodiments, the stripper composition of the present disclosure may contain dimethyl sulfoxide (DMSO), or in one or more embodiments, may be substantially free of dimethyl sulfoxide (DMSO). For example, the content of DMSO in the stripper composition of the present disclosure is preferably 5% by mass or less, more preferably 1% by mass or less, and even more preferably 0% by mass (i.e., no DMSO is contained).

[0035] (pH) From the viewpoint of improving the removability (removal property) of the resin mask, the pH of the stripper composition of the present disclosure is preferably 10 or more, more preferably 12 or more, and even more preferably 13 or more, and from the viewpoint of suppressing damage to the substrate resin, it is preferably 18 or less, more preferably 17 or less, and even more preferably 16 or less. The pH of the stripper composition is a value at 25°C and can be measured using pH, specifically, by the method described in the Examples.

[0036] The stripper composition according to the present disclosure may be a so-called one-component type, in which all components are premixed and supplied to the market, or may be a so-called two-component type, in which components are mixed at the time of use.

[0037] (Method of producing the release agent composition) In one or more embodiments, the release agent composition of the present disclosure can be produced by blending Component A, Component B, Component C, Component D, and, as necessary, the optional components (other components) described above, by a known method. For example, in one or more embodiments, the release agent composition of the present disclosure can be a composition comprising at least Component A, Component B, Component C, and Component D blended together. Therefore, the present disclosure relates to a method for producing a cleaning composition, which includes a step of blending at least Component A, Component B, Component C, and Component D. In the present disclosure, "blending" includes mixing Component A, Component B, Component C, Component D, and, if necessary, the above-mentioned optional components (other components) simultaneously or in any order. In the method for producing the cleaning composition of the present disclosure, the preferred amount of each component may be the same as the preferred content of each component in the cleaning composition of the present disclosure described above.

[0038] The stripper composition of the present disclosure may be in a form that is used for cleaning as is, or may be prepared as a concentrate to the extent that separation, precipitation, etc. do not occur and storage stability is not impaired. The stripper composition concentrate can be diluted at the time of use so that each component has the above-mentioned content (i.e., the content at the time of cleaning). The stripper composition concentrate can also be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of cleaning" for the concentrated stripper composition refers to the state in which the stripper composition concentrate is diluted.

[0039] [Items to be cleaned] In one or more embodiments, the object to be cleaned may be a substrate having a resin mask, a substrate having a passivation film and a resin mask, etc. In one or more embodiments, the substrate having a resin mask is preferably a substrate further having a passivation film, from the viewpoint of being able to suppress wrinkles and chipping of the passivation film while peeling off the resin mask. Examples of the substrate include a printed circuit board, a wafer, a copper plate, and an aluminum plate.

[0040] In one or more embodiments, the object to be cleaned may include an object to be cleaned having a resin mask attached thereto. In one or more embodiments, the object to be cleaned having a resin mask attached thereto may include an electronic component having a resin mask and its manufacturing intermediate, an electronic component having a passivation film and a resin mask and its manufacturing intermediate, etc. Examples of electronic components include at least one component selected from a printed circuit board, a wafer, and a metal plate such as a copper plate or an aluminum plate. The manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, including an intermediate product after resin mask treatment. Specific examples of objects to be cleaned with a resin mask attached include an interconnection forming process for forming interconnections on a substrate, a passivation film forming process for forming a passivation film on a substrate with interconnections formed thereon, a resist film forming process for applying a resist to a passivation film, developing and / or exposing the resist to form a patterned resist film, and an etching process for etching the passivation film using the patterned resist film as a mask, and then providing a resist film (resin mask) on the substrate. From the viewpoint of the releasability of the resin mask, it is preferable that the object to be cleaned does not undergo a dry etching process or a dry ashing process after the resin mask has been exposed to light and / or developed.

[0041] The resin mask may be, for example, a negative resin mask or a positive resin mask. In the present disclosure, a negative resin mask is formed using a negative resist, and examples thereof include a negative resist layer that has been subjected to exposure and / or development treatment. In the present disclosure, a positive resin mask is formed using a positive resist, and examples thereof include a positive resist layer that has been subjected to exposure and / or development treatment. In the resin mask stripping method of the present disclosure, the resin mask present in gaps between wirings, pillars, bumps, etc. can be stripped, and from the viewpoint of demonstrating the releasability of the resin mask, it is preferable to clean a negative resist layer. In one or more embodiments, the thickness of the resin mask is 100 μm or more, and from the viewpoint of being able to be peeled even if it is thick, it is preferably 150 μm or more, more preferably 200 μm or more. In addition, from the viewpoint of peelability, the thickness of the resin mask is preferably 500 μm or less, more preferably 350 μm or less. From the viewpoint of peelability of the resin mask, the gap between the wirings is preferably 30 μm or more, more preferably 100 μm or more, and preferably 500 μm or less, more preferably 300 μm or less. From the viewpoint of peelability of the resin mask, the pitch (gap) between the pillars and bumps is preferably 100 μm or more, more preferably 150 μm or more, and preferably 1000 μm or less, more preferably 500 μm or less.

[0042] In the present disclosure, in one or more embodiments, a passivation film is a surface protection film that protects a semiconductor element from external damage. The passivation film may be at least one polymer film selected from polyimide (PI) based polymers, polybenzoxazole (PBO) based polymers, and silicone based polymers. The thickness of the passivation film is, for example, 5 μm to 20 μm, and is preferably 12 μm or less, more preferably 10 μm or less, from the viewpoint that damage can be suppressed when the resin mask is peeled off even if the thickness is thin.

[0043] [Removal method] In one aspect, the present disclosure relates to a method for stripping a resin mask (hereinafter also referred to as the "stripping method of the present disclosure"), which includes a step of stripping a resin mask from a substrate (object to be cleaned) having the resin mask thereon using a stripper composition of the present disclosure (hereinafter also simply referred to as the "stripping step"). Examples of the object to be cleaned in the stripping step include the above-mentioned objects to be cleaned.

[0044] The stripping method of the present disclosure includes a step of stripping a resin mask from a substrate (object to be cleaned) having the resin mask thereon using the stripper composition of the present disclosure (hereinafter, also simply referred to as a "stripping step"). In one or more embodiments, the stripping step includes contacting the object to be cleaned with the stripper composition of the present disclosure. According to the stripping method of the present disclosure, the resin mask can be efficiently removed.

[0045] Examples of a method for peeling a resin mask from an object to be cleaned using the stripper composition of the present disclosure, or a method for contacting an object to be cleaned with the stripper composition of the present disclosure, include a method of contacting the object by immersing the object in a cleaning bath containing the stripper composition, a method of contacting the object by spraying the stripper composition (shower method), and an ultrasonic cleaning method of irradiating the object with ultrasonic waves while immersed in the stripper composition. The stripper composition of the present disclosure can be used for cleaning as is without dilution. Examples of objects to be cleaned include the above-mentioned objects. The immersion time can be, for example, from 1 minute to 60 minutes, or even from 5 minutes to 30 minutes. The spray time can be, for example, from 1 minute to 60 minutes, or even from 3 minutes to 30 minutes.

[0046] In one or more embodiments, the stripping method of the present disclosure may include a step of contacting the object to be cleaned with the stripper composition of the present disclosure, rinsing with water, and drying. Examples of the rinsing method include rinsing with running water. Examples of the drying method include air blow drying. In one or more embodiments, the stripping method of the present disclosure can include a step of contacting the object to be cleaned with the stripper composition of the present disclosure and then rinsing with water.

[0047] In the stripping method of the present disclosure, ultrasonic waves are preferably applied when the stripper composition of the present disclosure comes into contact with the object to be cleaned, and the ultrasonic waves are more preferably relatively high frequency, from the viewpoint of making it easier for the stripper composition of the present disclosure to exert its stripping and cleaning power. From the same viewpoint, the ultrasonic irradiation conditions are, for example, preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.

[0048] In the stripping method of the present disclosure, the temperature of the stripper composition of the present disclosure is preferably 40°C or higher, more preferably 50°C or higher, from the viewpoint of easily exerting the stripping and cleaning power of the stripper composition of the present disclosure, and is preferably 70°C or lower, more preferably 60°C or lower, from the viewpoint of reducing the effect on the substrate.

[0049] [Electronic component manufacturing method] In one aspect, the present disclosure relates to a method for producing an electronic component (hereinafter also referred to as the "method for producing an electronic component of the present disclosure"), which includes the stripping method of the present disclosure. In one or more embodiments, the method for producing an electronic component of the present disclosure is a method for producing an electronic component, which includes a step (stripping step) of stripping a resin mask from a substrate (object to be cleaned) having the resin mask thereon using the stripper composition of the present disclosure. Examples of the object to be cleaned include the above-mentioned objects to be cleaned. According to the method for producing electronic components of the present disclosure, resin masks attached to electronic components can be effectively removed, thereby enabling the production of highly reliable electronic components. Furthermore, by using the stripper composition of the present disclosure, the resin masks attached to electronic components can be easily removed, thereby shortening the removal time (cleaning time) and improving the production efficiency of electronic components.

[0050] In one or more embodiments, the method for producing an electronic component according to the present disclosure may include the following steps (1) to (5). (1) A process for forming wiring on a substrate (wiring formation process) (2) A process of forming a passivation film on the substrate on which the wiring has been formed (passivation film formation process) (3) A process of applying a resist onto the passivation film, exposing and / or developing the resist, and forming a patterned resist film (resist film forming process). (4) Various processing steps such as plating, development, and etching using a patterned resist film as a mask (processing steps) (5) A step of stripping the resist film (resin mask) using the stripper composition of the present disclosure (stripping step).

[0051] [kit] In one aspect, the present disclosure relates to a kit (hereinafter also referred to as the "kit of the present disclosure") for use in either the stripping method of the present disclosure or the method for producing an electronic component of the present disclosure. In one or more embodiments, the kit of the present disclosure is a kit for producing the stripper composition of the present disclosure. The kit of the present disclosure can provide a stripper composition that is excellent in dissolving a resin mask at a high rate. In one or more embodiments, the kit of the present disclosure includes a kit (two-liquid cleaning composition) that contains a first liquid and a second liquid that are not mixed with each other, and in which components A, B, C, and D are each contained in either or both of the first liquid and the second liquid, and the first liquid and the second liquid are mixed upon use. The first liquid and the second liquid may each contain the above-mentioned optional components (other components) as necessary. [Example]

[0052] The present disclosure will be specifically described below using examples, but the present disclosure is not limited to these examples in any way.

[0053] 1. Preparation of Stripping Compositions of Examples 1 to 5 and Comparative Examples 1 to 4 The components shown in Table 1 were blended in the amounts (% by mass, active ingredient) shown in Table 1 and then stirred to mix, thereby preparing the stripper compositions of Examples 1 to 5 and Comparative Examples 1 to 4. The pH of each stripper composition was 15 for Example 1, 15 for Example 2, 16 for Example 3, 15 for Example 4, 15 for Example 5, 14 for Comparative Example 1, 15 for Comparative Example 2, 14 for Comparative Example 3, and 15 for Comparative Example 4.

[0054] The following materials were used to prepare the stripper composition: (Component A) Hydroxylamine (HA) [Fujifilm Wako Pure Chemical Industries, 50% aqueous solution] (Component B) B1: Tetramethylammonium hydroxide (TMAH) [Fujifilm Wako Pure Chemical Industries, Ltd., pentahydrate] B2: Monoethanolamine (MEA) [Nippon Shokubai Co., Ltd.] B3: Potassium hydroxide (KOH) [Toagosei Co., Ltd., 48% aqueous solution] (Component C) Diethylene glycol monobutyl ether (BDG) [Nippon Nyukazai Co., Ltd.] Triethylene glycol (TEG) [Nippon Shokubai Co., Ltd.] (Component D) Water [pure water of 1 μS / cm or less produced using the Organo Corporation G-10DSTSET water purification system]

[0055] 2. Method for measuring pH of stripping composition The pH of the stripping composition at 25°C is a value measured using a pH meter (HM-30G, manufactured by Toa Denpa Kogyo Co., Ltd.), and is the value measured 3 minutes after immersing the electrodes of the pH meter in the stripping composition.

[0056] 3. Evaluation of Stripping Agent Composition [Removal time evaluation (resin mask removal)] Using the prepared stripper compositions of Examples 1 to 5 and Comparative Examples 1 to 4, evaluation of resin mask removability was carried out as follows. <Dry film (DF) sample for evaluation> The evaluation DF sample was a negative dry film resist that had been exposed and cured, and had a size of 2 cm square. <Measurement of dry film resist (DF) dissolution time> 50 mL of the stripping composition was added to a 100 mL glass beaker. This was heated to 50°C, and the DF sample was immersed in it. The time until the DF sample was completely dissolved was measured visually. The results are shown in Table 1. If the dissolution was not complete even after 70 minutes, it was determined that the sample was insoluble.

[0057] [Table 1]

[0058] As shown in Table 1, the stripper compositions of Examples 1 to 5, in which the mass ratio C / A of the organic solvent to hydroxylamine was within the specified range and the mass ratio D / A of the water to hydroxylamine was less than 11, were found to have a superior dissolution rate for the dry film resist compared to Comparative Example 1, which did not contain component C, Comparative Examples 2 and 3, in which the mass ratio C / A was not within the specified range, and Comparative Example 4, in which the mass ratio D / A was not less than 11. [Industrial Applicability]

[0059] According to the present disclosure, a stripper composition that has an excellent dissolution rate for a resin mask and can efficiently remove the resin mask can be provided. Furthermore, by using the stripper composition of the present disclosure, it is possible to improve the performance and reliability of manufactured electronic components, and to improve the productivity of semiconductor devices.

Claims

1. The composition contains hydroxylamine (component A), an alkaline agent other than component A (component B), an organic solvent other than components A and B (component C), and water (component D), the mass ratio C / A of component C to component A is greater than 2.25 and not greater than 50; A stripping agent composition, wherein the mass ratio D / A of component D to component A is less than 11.

2. 2. The stripping composition according to claim 1, wherein the mass ratio C / A of component C to component A is 2.5 or more.

3. The stripping composition according to claim 1, wherein the content of component A is 3% by mass or more and 30% by mass or less.

4. 2. The stripping composition according to claim 1, wherein component B comprises at least one selected from the group consisting of quaternary ammonium hydroxides, alkanolamines, and inorganic metal hydroxides.

5. The stripper composition of claim 1 , wherein component B comprises an alkanolamine.

6. 2. The stripping composition according to claim 1, wherein the mass ratio D / A of component D to component A is less than 6.

7. 10. The stripper composition of claim 1, wherein component B comprises a quaternary ammonium hydroxide, an alkanolamine, and an inorganic metal hydroxide.

8. 5. The stripping composition according to claim 4, wherein the mass ratio of the hydroxylamine to the alkanolamine (hydroxylamine / alkanolamine) is 0.3 or more and 2.0 or less.

9. The stripping composition according to claim 1 , wherein component C comprises an organic solvent having a hydroxyl group.

10. The stripper composition of claim 1 , wherein component C comprises a glycol ether.

11. 10. The stripper composition of claim 1, wherein component C comprises diethylene glycol monobutyl ether.

12. The stripping composition according to claim 1, wherein the content of water (component D) is 30 mass % or less.

13. 2. The stripping composition according to claim 1, wherein the mass ratio C / D of component C to component D is 60 / 40 or more and 100 / 0 or less.

14. 10. The stripper composition of claim 1, which is substantially free of dimethyl sulfoxide.

15. A method for stripping a resin mask, comprising the step of stripping the resin mask from a substrate having the resin mask thereon by using the stripping composition according to any one of claims 1 to 14.

16. A method for manufacturing an electronic component, comprising the method for removing a resin mask according to claim 15.

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