Optical components and display panels

Abstract

A display panel according to one embodiment of the present invention includes: (1) a light-emitting element including a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, and outputting source light; (2) a light control layer disposed on the light-emitting element, and including a first light control pattern that converts the source light into a first light, and a second light control pattern that transmits the source light; and (3) a color filter layer disposed on the light control layer, and including a first color filter superimposed on the first light control pattern and a second color filter superimposed on the second light control pattern, wherein the light transmittance of the first color filter in a wavelength range of 600 nm to 640 nm is 70% or less, and the light transmittance of the second color filter in a wavelength range of 430 nm to 470 nm is 75% or less.

Description

[Technical field]

[0001] The present invention relates to an optical member and a display panel, and more particularly to an optical member and a display panel with reduced reflectance and improved reproducibility. [Background technology]

[0002] The display panel includes a transmissive display panel that selectively transmits source light generated from a light source, and an emissive display panel that generates source light from the display panel itself. The display panel may include different types of light control patterns for different pixels to generate color images. The light control patterns may transmit only a certain wavelength range of the source light, or may change the color of the source light. Some light control patterns may change the characteristics of the light without changing the color of the source light. Summary of the Invention [Problem to be solved by the invention]

[0003] An object of the present invention is to provide an optical member having a reduced reflectance of external light and an improved color reproduction ratio.

[0004] SUMMARY OF THE PRESENT EMBODIMENT An object of the present invention is to provide a display panel having a reduced reflectance of external light on the surface of the display panel and an improved color reproduction ratio, thereby providing an excellent color sensation. [Means for solving the problem]

[0005] A display panel according to one embodiment of the present invention includes a light-emitting element including a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, and outputs source light; a light control layer disposed on the light-emitting element and including a first light control pattern that converts the source light into a first light and a second light control pattern that transmits the source light; and a color filter layer disposed on the light control layer and including a first color filter that overlaps (overlaps) the first light control pattern and a second color filter that overlaps the second light control pattern, wherein the light transmittance of the first color filter in a wavelength range of 600 nm to 640 nm is 70% or less, and the light transmittance of the second color filter in a wavelength range of 430 nm to 470 nm is 75% or less.

[0006] The first color filter may include a point having a light transmittance of 10% in a wavelength range of more than 590 nm and not exceeding 610 nm.

[0007] The first color filter may have a transmittance of less than 10% in the wavelength range of 590 nm or less.

[0008] The transmittance of the first color filter and the second color filter may be measured by an LCF-2100QD spectrometer.

[0009] The second color filter may have a half-width of a light transmittance spectrum of 95 nm or less.

[0010] The wavelength of the first light may be longer than the wavelength of the source light, and the first light control pattern may include first quantum dots that convert the source light into the first light.

[0011] The first color filter may include a red colorant, and the second color filter may include a blue colorant.

[0012] The first color filter may further include a black colorant, and the black colorant may be contained in an amount of 1 wt % or less relative to the total weight of the red colorant and the black colorant.

[0013] The second color filter further includes a purple colorant, and the weight ratio of the blue colorant to the purple colorant may be 70:30 to 80:20.

[0014] The first color filter may have a thickness of 3 μm to 5.5 μm, and the second color filter may have a thickness of 1.8 μm to 4.2 μm.

[0015] The display panel according to an embodiment of the present invention may further include a base substrate disposed under the light emitting element, and a base layer disposed on the color filter layer.

[0016] The display panel according to an embodiment of the present invention may further include an anti-reflection layer disposed on the base layer.

[0017] The light emitting device may receive unpolarized incident light from above the anti-reflective layer.

[0018] The color filter layer may further include a low refractive index layer disposed between the first and second color filters and the light control layer, and the refractive index of the low refractive index layer may be 1.3 or less.

[0019] The light emitting device may include a plurality of light emitting stacks disposed between the first electrode and the second electrode, each stack including the light emitting layer.

[0020] The plurality of light-emitting stacks may include a first light-emitting stack disposed on the first electrode and including a first light-emitting layer, a charge generation layer disposed on the first light-emitting stack, and a second light-emitting stack disposed on the charge generation layer and including a second light-emitting layer, wherein the first light-emitting layer may emit light of a different color than the second light-emitting layer.

[0021] An optical element according to one embodiment of the present invention includes a light control layer including a first light control pattern including quantum dots that convert the wavelength of incident light and a second light control pattern that transmits the incident light, and a color filter layer disposed on the light control layer and including a first color filter overlapping the first light control pattern and a second color filter overlapping the second light control pattern, wherein the first color filter has a light transmittance of 70% or less in a wavelength range of 600 nm to 640 nm, and the second color filter has a light transmittance of 75% or less in a wavelength range of 430 nm to 470 nm.

[0022] The first color filter may have a thickness greater than a thickness of the second color filter.

[0023] A display panel according to one embodiment of the present invention includes a lower panel including a display element layer and a sealing layer disposed on the display element layer, an upper panel disposed on the lower panel, and a filling layer disposed between the lower panel and the upper panel, the upper panel including a light control layer disposed on the filling layer and including a first light control pattern that converts source light into a first light and a second light control pattern that transmits the source light, and a color filter layer disposed on the light control layer and including a first color filter overlapping the first light control pattern and a second color filter overlapping the second light control pattern, the first color filter having a thickness of 3 μm or more and 5.5 μm or less, and the second color filter having a thickness of 1.8 μm or more and 4.2 μm or less.

[0024] The display panel according to an embodiment of the present invention may further include an anti-reflection layer disposed on the color filter layer, and the display element layer may receive unpolarized incident light from above the anti-reflection layer. Effect of the Invention

[0025] According to an optical member and a display panel including the same according to an embodiment of the present invention, the transmittance of the color filter at the peak wavelength of light provided from the light source, the light transmittance in an adjacent wavelength range, the half-width, etc. can be adjusted to be within a certain range, thereby optimizing the transmission efficiency while reducing the reflectance and improving the color reproduction rate, thereby providing a display panel with excellent color sensation. [Brief description of the drawings]

[0026] [Figure 1a] 1 is a perspective view of a display panel according to an embodiment of the present invention; [Figure 1b] 1 is a cross-sectional view of a display panel according to an embodiment of the present invention. [Figure 1c] FIG. 2 is a plan view of a display panel according to an embodiment of the present invention. [Figure 2a] 2 is an enlarged plan view of a portion of a display panel according to an embodiment of the present invention; [Figure 2b] 1 is a cross-sectional view of a display panel according to an embodiment of the present invention. [Figure 2c] 2 is an enlarged view showing a partial area of ​​a cross section of a display panel according to an embodiment of the present invention; FIG. [Diagram 3] 2 is a cross-sectional view of a light emitting device included in a display panel according to an embodiment of the present invention. [Figure 4a] A figure showing a graph of the light transmittance of a first color filter included in a display panel according to one embodiment of the present invention, a graph of the light transmittance of a comparative color filter, and a graph of the light transmittance emitted from a light source in one embodiment. [Figure 4b] 4 is a graph showing the light transmittance of a second color filter included in a display panel according to an embodiment of the present invention, and a graph showing the light transmittance of a color filter of a comparative example. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0028] As used herein, when a component (or region, layer, portion, etc.) is referred to as being "on," "coupled," or "bonded" to another component, it means that it may be directly connected or bonded to the other component, or that a third component may be disposed therebetween.

[0029] The same reference numerals refer to the same components. Also, in the drawings, thicknesses, ratios, and dimensions of the components are exaggerated for the effective explanation of the technical contents. "And / or" includes all combinations of one or more defined by the related configuration.

[0030] Terms such as first and second are used to describe various components, but the components are not limited to the terms. The terms are used only to distinguish one component from another. For example, the first component may be named the second component, and similarly the second component may be named the first component, without departing from the scope of the present invention. A singular surface includes a plural expression unless the context clearly indicates otherwise.

[0031] In addition, terms such as "under", "below", "up" and "above" are used to describe the relationship between components shown in the drawings. The terms are relative concepts and are described based on the directions shown in the drawings.

[0032] It should be understood that terms such as "comprise" or "have" specify the presence of any feature, numeral, step, operation, component, part, or combination thereof set forth in the specification above, but do not preclude the presence or additional possibility of one or more other features, numerals, steps, operations, components, parts, or combinations thereof.

[0033] As used herein, "directly disposed" can mean that there is no additional layer, film, region, plate, etc. between a portion such as a layer, film, region, plate, etc. and another portion. For example, "directly disposed" can mean disposed between two layers or two members without the use of an additional member such as an adhesive member.

[0034] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present invention belongs. Furthermore, terms that are defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted in an overly ideal or formal sense unless expressly defined herein.

[0035] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A display panel according to an embodiment of the present invention will now be described with reference to the accompanying drawings.

[0036] Figure 1a is a perspective view of a display panel according to an embodiment of the present invention, Figure 1b is a cross-sectional view of the display panel according to an embodiment of the present invention, and Figure 1c is a plan view of the display panel according to an embodiment of the present invention.

[0037] As shown in FIG. 1a, the display panel DP may display an image through a display surface DP-IS. The display surface DP-IS is parallel to a plane defined by a first directional axis DR1 and a second directional axis DR2. The display surface DP-IS may include a display area DA and a non-display area NDA. Pixels PX are arranged in the display area DA, and pixels PX are not arranged in the non-display area NDA. The non-display area NDA is defined along the periphery of the display surface DP-IS. The non-display area NDA surrounds the display area DA. However, this is not limited thereto, and in one embodiment of the present invention, the non-display area NDA may be omitted or may be arranged only on one side of the display area DA.

[0038] The normal direction of the display surface DP-IS, i.e., the thickness direction of the display panel DP, is indicated by the third directional axis DR3. The front (or upper surface) and rear (or lower surface) of each layer or unit described below are divided by the third direction DR3. However, the first to third directions DR1, DR2, and DR3 illustrated in this embodiment are merely examples.

[0039] In one embodiment of the present invention, the display panel DP has a flat display surface DP-IS, but is not limited thereto. The display panel DP may include a curved display surface or a stereoscopic display surface. The stereoscopic display surface may include a plurality of display areas pointing in different directions.

[0040] As shown in FIG. 1b, the display panel DP includes a base substrate BS, a circuit element layer DP-CL, a display element layer DP-LED, and an optical structure layer OSL. The base substrate BS may include a synthetic resin substrate or a glass substrate. The circuit element layer DP-CL includes at least one insulating layer and a circuit element. The circuit element includes a signal line, a pixel driving circuit, and the like. The circuit element layer DP-CL may be formed by a process of forming an insulating layer, a semiconductor layer, and a conductive layer by coating, deposition, and the like, and a process of patterning the insulating layer, the semiconductor layer, and the conductive layer by a photolithography process. The display element layer DP-LED includes at least a display element. The optical structure OSL may convert the color of light provided from the display element. The optical structure OSL may include a light control pattern and a structure for increasing the light conversion efficiency.

[0041] 1c shows the layout relationship of the signal lines GL1 to GLn and DL1 to DLm and the pixels PX11 to PXnm on a plane. The signal lines GL1 to GLn and DL1 to DLm may include a plurality of gate lines GL1 to GLn and a plurality of data lines DL1 to DLm.

[0042] Each of the pixels PX11 to PXnm is connected to a corresponding gate line among the gate lines GL1 to GLn and a corresponding data line among the data lines DL1 to DLm. Each of the pixels PX11 to PXnm may include a pixel driving circuit and a display element. Depending on the configuration of the pixel driving circuit of the pixels PX11 to PXnm, more kinds of signal lines may be provided on the display panel DP.

[0043] Although the pixels PX11 to PXnm in a matrix are shown as an example, the present invention is not limited to this. (登録商標) For example, the points where the pixels PX11 to PXnm are arranged may correspond to the vertices of a diamond or rhombus. The gate driving circuit GDC may be integrated into the display panel DP by an oxide silicon gate driver circuit (OSG) or amorphous silicon gate driver circuit (ASG) process.

[0044] Fig. 2a is an enlarged plan view of a part of a display panel according to an embodiment of the present invention. Fig. 2a exemplarily shows a plane including three pixel regions PXA-R, PXA-B, and PXA-G and adjacent bank well regions BWA in a display panel DP according to an embodiment of the present invention. In an embodiment of the present invention, the three types of light-emitting regions PXA-R, PXA-B, and PXA-G shown in Fig. 2a can be repeatedly arranged throughout the display area DA (see Fig. 1a).

[0045] A peripheral region NPXA is disposed around the first to third pixel regions PXA-R, PXA-B, and PXA-G. The peripheral region NPXA sets the boundaries between the first to third pixel regions PXA-R, PXA-B, and PXA-G. The peripheral region NPXA may surround the first to third pixel regions PXA-R, PXA-B, and PXA-G. A structure for preventing color mixing between the first to third pixel regions PXA-R, PXA-B, and PXA-G, such as a pixel definition film PDL (see FIG. 2b) or a bank BMP (see FIG. 2b), may be disposed in the peripheral region NPXA.

[0046] 2a, the first to third pixel regions PXA-R, PXA-B, and PXA-G are shown as an example having the same planar shape but different planar areas, but are not limited thereto. At least two of the first to third pixel regions PXA-R, PXA-B, and PXA-G may have the same areas. The areas of the first to third pixel regions PXA-R, PXA-B, and PXA-G may be set according to the light output color. Of the primary colors, the area of ​​the pixel region emitting red light may be the largest, and the area of ​​the pixel region emitting blue light may be the smallest.

[0047] 2a shows the first to third pixel regions PXA-R, PXA-B, and PXA-G as rectangular shapes, but is not limited thereto. On a plan view, the first to third pixel regions PXA-R, PXA-B, and PXA-G may have other polygonal shapes (including substantially polygonal shapes), such as a rhombus or a pentagon. In one embodiment, the first to third pixel regions PXA-R, PXA-B, and PXA-G may have rectangular shapes (substantially rectangular shapes) with rounded corners on a plan view.

[0048] 2a, the third pixel region PXA-G is arranged in the first row, and the first pixel region PXA-R and the second pixel region PXA-B are arranged in the second row, but the arrangement of the first to third pixel regions PXA-R, PXA-B, and PXA-G may be changed in various ways. For example, the first to third pixel regions PXA-R, PXA-B, and PXA-G may be arranged in the same row.

[0049] One of the first to third pixel regions PXA-R, PXA-B, and PXA-G provides a second light corresponding to a portion of the source light, the other of the first to third pixel regions PXA-R, PXA-B, and PXA-G provides a first light different from the second light, and the remaining one of the first to third pixel regions PXA-R, PXA-B, and PXA-G provides a third light different from the first light and the second light. In this embodiment, the second pixel region PXA-B provides a second light corresponding to a portion of the source light. In this embodiment, the first pixel region PXA-R may provide a red light, the second pixel region PXA-B may provide a blue light, and the third pixel region PXA-G may provide a green light.

[0050] A bank well region BWA may be defined in the display region DA (see FIG. 1a). The bank well region BWA may be a region where a bank well BW (see FIG. 5) is formed to prevent defects caused by erroneous patterning of a plurality of light control patterns CCP-R, CCP-B, and CCP-G (see FIG. 2c) in a process of patterning the plurality of light control patterns CCP-R, CCP-B, and CCP-G (see FIG. 2c) included in the light control layer CCL (see FIG. 2c). In other words, the bank well region BWA may be a region where a bank well formed by removing a portion of the bank BMP (see FIG. 2c) is defined.

[0051] Figure 2a illustrates, by way of example, that two bank well regions BWA are defined adjacent to the third pixel region PXA-G, but this is not limited thereto, and the shape and arrangement of the bank well regions BWA may be modified in various ways.

[0052] Fig. 2b is a cross-sectional view of a display panel according to an embodiment of the present invention. Fig. 2c is an enlarged view of a portion of a cross-section of a display panel according to an embodiment of the present invention. Fig. 3 is a cross-sectional view of a light-emitting element included in a display panel according to an embodiment of the present invention. Fig. 2b shows a cross-section corresponding to the I-I' cutting line in Fig. 2a. Fig. 2c shows a cross-section corresponding to the II-II' cutting line in Fig. 2a.

[0053] 2b, a display panel DP according to an embodiment may include a base substrate BS, a circuit element layer DP-CL disposed on the base substrate BS, and a display element layer DP-LED disposed on the circuit element layer DP-CL. In this specification, the base substrate BS, the circuit element layer DP-CL, and the display element layer DP-LED may be collectively referred to as a lower panel, a lower display substrate, or a display member.

[0054] The base substrate BS may be a member that provides a reference surface on which the components included in the circuit element layer DP-CL are disposed. In one embodiment, the base substrate BS may be a glass substrate, a metal substrate, a polymer substrate, etc. However, the embodiment is not limited thereto, and the base substrate BS may be an inorganic layer, a functional layer, or a composite material layer.

[0055] The base substrate BS may have a multi-layer structure. For example, the base substrate BS may have a three-layer structure of a polymer resin layer, a barrier layer, and a polymer resin layer. In particular, the polymer resin layer may include a polyimide-based resin. The polymer resin layer may also include at least one of an acrylic resin, a methacrylic resin, a polyisoprene-based resin, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a siloxane resin, a polyamide resin, and a perylene resin. Meanwhile, in this specification, an "a-based" resin means that it contains a functional group of "a". Meanwhile, the barrier layer may be an inorganic layer including an inorganic layer.

[0056] The circuit element layer DP-CL may be disposed on a base substrate BS. The circuit element layer DP-CL may include a transistor TD as a circuit element. The configuration of the circuit element layer DP-CL may vary depending on the design of a driving circuit for the pixel PX (see FIG. 1a), and FIG. 2b shows one transistor TD as an example. The layout relationship of an active AD, a source SD, a drain DD, and a gate GD constituting the transistor TD is shown as an example. The active AD, the source SD, and the drain DD may be regions that are divided according to the doping concentration or conductivity of a semiconductor pattern.

[0057] The circuit element layer DP-CL may include a lower buffer layer BRL disposed on the base substrate BS, a first insulating layer 10, a second insulating layer 20, and a third insulating layer 30. For example, the lower buffer layer BRL, the first insulating layer 10, and the second insulating layer 20 may be inorganic layers, and the third insulating layer 30 may be an organic layer.

[0058] The display element layer DP-LED may include a light-emitting element LED as a display element. The light-emitting element LED may generate the above-mentioned source light. The light-emitting element LED includes a first electrode EL1, a second electrode EL2, and an emission layer EML disposed therebetween. In this embodiment, the display element layer DP-LED may include an organic light-emitting diode as a light-emitting element. In one embodiment of the present invention, the light-emitting element may include a quantum dot light-emitting diode. That is, the emission layer EML included in the light-emitting element LED may include an organic emission material as an emission material, or the emission layer EML may include quantum dots as an emission material. Alternatively, in this embodiment, the display element layer DP-LED may include a micro-light-emitting element described later as a light-emitting element. The micro-light-emitting element may include, for example, a micro LED element and / or a nano LED element. The micro-light-emitting element may be a light-emitting element having a micro- or nano-scale size and including an active layer disposed between a plurality of semiconductor layers.

[0059] A first electrode EL1 is disposed on the third insulating layer 30. The first electrode EL1 may be directly or indirectly connected to the transistor TD, and a connection structure between the first electrode EL1 and the transistor TD is not shown in FIG.

[0060] The display element layer DP-LED includes a pixel-defining film PDL. For example, the pixel-defining film PDL can be an organic layer. A light-emitting opening OH (see FIG. 2c) is defined in the pixel-defining film PDL. The light-emitting opening OH of the pixel-defining film PDL exposes at least a portion of the first electrode EL1. In this embodiment, a first light-emitting area EA1 can be defined by the light-emitting opening OH.

[0061] The hole control layer HTR, the emission layer EML, and the electronic control layer ETR overlap at least the pixel region PXA-R. The hole control layer HTR, the emission layer EML, the electronic control layer ETR, and the second electrode EL2 may be disposed in common in the first to third pixel regions PXA-R, PXA-B, and PXA-G (see FIG. 2c). The hole control layer HTR, the emission layer EML, the electronic control layer ETR, and the second electrode EL2 overlapping the first to third pixel regions PXA-R, PXA-B, and PXA-G (see FIG. 2c) may have an integral shape, that is, a single shape, and may have an integral shape that is not divided into individual parts. However, this is not limited thereto, and at least one of the hole control layer HTR, the emission layer EML, and the electronic control layer ETR may be formed separately for each of the first to third pixel regions PXA-R, PXA-B, and PXA-G (see FIG. 2c). In one embodiment, the light emitting layer EML may be patterned in the light emitting opening OH and may be formed separately for each of the first to third pixel regions PXA-R, PXA-B, and PXA-G (see FIG. 2c).

[0062] The hole control layer HTR includes a hole transport layer and may further include a hole injection layer.

[0063] The light-emitting layer EML may generate a third light, which is a source light. The light-emitting layer EML may generate blue light. The blue light may include light with a wavelength of 410 nm to 480 nm. The emission spectrum of the blue light may have a maximum peak in the wavelength range of 440 nm to 460 nm.

[0064] The electron control layer ETR includes an electron transport layer and may further include an electron injection layer.

[0065] The display element layer DP-LED may include a thin-film encapsulation layer TFE that protects the second electrode EL2. The thin-film encapsulation layer TFE may include an organic or inorganic material. The thin-film encapsulation layer TFE may have a multi-layer (laminate) structure in which inorganic layers / organic layers are repeated or alternately arranged. In this embodiment, the thin-film encapsulation layer TFE may include a first encapsulation inorganic layer IOL1 / encapsulation organic layer OL / second encapsulation inorganic layer IOL2. The first and second encapsulation inorganic layers IOL1 / IOL2 protect the light-emitting element LED from external moisture, and the encapsulation organic layer OL may prevent defects such as stains and indentations on the light-emitting element LED due to foreign matter that may flow in during the manufacturing process. Although not shown, the display panel DP may further include a refractive index control layer on the upper side of the thin-film encapsulation layer TFE to improve light output efficiency.

[0066] As shown in Fig. 2b, an optical structure layer OSL is disposed on the thin film encapsulation layer TFE. The optical structure layer OSL may include a light control layer CCL, a color filter layer CFL, and a base layer BL. In this specification, the optical structure layer OSL may be referred to as an upper panel, an upper display substrate, or an optical substrate.

[0067] The light control layer CCL may be disposed on the display element layer DP-LED including the light emitting element LED. The light control layer CCL may include banks BMP, light control patterns CCP, and barrier layers CAP and CAP-T.

[0068] The bank BMP may include a base resin and additives. The base resin BR may be formed from a variety of resin compositions generally referred to as binders. The additives may include a coupling agent and / or a photoinitiator. The additives may further include a dispersant.

[0069] The bank BMP may include a black coloring agent to block light. The bank BMP may include a black dye or black pigment mixed into the base resin. In one embodiment, the black agent may include carbon black or may include a metal such as chromium or an oxide thereof.

[0070] In the bank BMP, a bank opening BW-OH corresponding to the light-emitting opening OH is defined. In a plan view, the bank opening BW-OH overlaps with the light-emitting opening OH and has a larger area than the light-emitting opening OH. In other words, the bank opening BW-OH can have a larger area than the light-emitting region EA1 defined by the light-emitting opening OH. Meanwhile, in this specification, "corresponding" means that the two structures overlap when viewed from the thickness direction DR3 of the display panel DP, and is not limited to the same area.

[0071] A light control pattern CCP is disposed inside the bank opening BW-OH. At least a part of the light control patterns CCP, a light control pattern CCP-R, can change the optical properties of the source light.

[0072] The light-control pattern CCP-R may include quantum dots for changing the optical properties of the source light. The light-control pattern CCP-R may include quantum dots that convert the source light into light of another wavelength. In the light-control pattern CCP-R that overlaps the first pixel region PXA-R, the quantum dots may convert the source light including blue light into red light.

[0073] The quantum dots have a core-shell structure, and the core of the quantum dot can be selected from II-VI compounds, III-VI compounds, I-III-VI compounds, III-V compounds, VI-IV compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0074] The II-VI compounds include binary compounds selected from the group consisting of CdSe, CdTe, CdS, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgT ternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

[0075] III-VI compounds include In 2 S 3 , In 2 Se 3 Binary compounds such as InGaS 3 , InGaSe 3 etc., or any combination thereof.

[0076] Group I-III-VI compounds include AgInS, AgInS 2 , CuInS, CuInS 2 , AgGaS 2 , CuGaS 2 ,CuGaO 2 , AgGaO 2 , AgAlO 2 and mixtures thereof, or AgInGaS 2 , CuInGaS 2 The compound may be selected from quaternary compounds such as:

[0077] The III-V compound may be selected from the group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof, ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InAlP, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof, and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. Meanwhile, the III-V compound may further comprise a group II metal. For example, InZnP may be selected as the III-II-V compound.

[0078] The IV-VI compound may be selected from the group consisting of binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof, ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof, and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof. The group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0079] Here, the binary, ternary, or quaternary compounds may be present in a particle with a uniform concentration, or may be present in the same particle with partially different concentration distributions. Also, a quantum dot may have a core-shell structure in which one quantum dot surrounds another quantum dot. In the core-shell structure, the concentration of an element present in the shell may have a concentration gradient that decreases as it approaches the core.

[0080] In some embodiments, the quantum dots may have a core-shell structure, including a core comprising the nanocrystals described above, and a shell surrounding the core. The shell of the quantum dots may act as a protective layer to prevent chemical modification of the core and maintain its semiconducting properties, and / or as a charging layer to provide electrophoretic properties to the quantum dots. The shell may be a single layer or multiple layers (laminates). Examples of the shell of the quantum dots include metal or non-metal oxides, semiconducting compounds, or combinations thereof.

[0081] For example, the metal or nonmetal oxide is SiO 2 , Al 2 O 3 , TiO 2 , ZnO, MnO, Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , binary compounds such as NiO, or MgAl 2 O 4 , CoFe 2 O 4 , NiFe 2 O 4 , CoMn 2 O 4 However, the present invention is not limited thereto.

[0082] Examples of the semiconductor compound include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, but the present invention is not limited to these.

[0083] The quantum dots have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and in this range, color purity and color reproducibility can be improved. In addition, since the light emitted through such quantum dots is emitted in all directions, the light viewing angle can be improved.

[0084] The shape of the quantum dots is not particularly limited and may be any shape commonly used in the art. More specifically, the quantum dots may be in the form of spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, or nanoplate-like particles.

[0085] The quantum dots may adjust the hue of light emitted depending on the particle size, and accordingly, the quantum dots may have various emission hues such as blue, red, and green. In one embodiment, the quantum dots included in the light control pattern CCP-R overlapping the first pixel region PXA-R may have a red emission color. The smaller the particle size of the quantum dots, the shorter the wavelength region of light they may emit. For example, among quantum dots having the same core, the particle size of the quantum dots emitting green light may be smaller than the particle size of the quantum dots emitting red light. Also, among quantum dots having the same core, the particle size of the quantum dots emitting blue light may be smaller than the particle size of the quantum dots emitting green light. However, the embodiment is not limited thereto, and even in quantum dots having the same core, the particle size may be adjusted depending on the material forming the shell and the thickness of the shell.

[0086] Meanwhile, if quantum dots have various emission hues such as blue, red, and green, quantum dots having different emission colors may have different core materials.

[0087] The light control pattern CCP-R may further include a scatterer. The light control pattern CCP-R may include quantum dots that convert the source light into red light and scatterers that scatter the light.

[0088] The scatterers can be inorganic particles. For example, the scatterers can be TiO 2 , ZnO, Al 2 O 3 , SiO 2 The scatterer may include at least one of TiO 2 , ZnO, Al 2 O 3 , SiO 2 or hollow silica, or TiO 2 , ZnO, Al 2 O 3 , SiO 2 and hollow silica.

[0089] The light control pattern CCP-R may include a base resin in which the quantum dots and the scatterers are dispersed. The base resin is a medium in which the quantum dots and the scatterers are dispersed, and is generally made of various resin compositions called binders. For example, the base resin may be an acrylic resin, a urethane resin, a silicone resin, an epoxy resin, or the like. The base resin may be a transparent resin.

[0090] In this embodiment, the light control pattern CCP-R may be formed by an inkjet process. A liquid composition is provided in the bank opening BW-OH. The composition is polymerized by a thermal curing process or a photocuring process, and the volume of the composition is reduced after curing.

[0091] A step may occur between the upper surface of the bank BMP and the upper surface of the light control pattern CCP-R. That is, the upper surface of the bank BMP may be set (defined) higher than the upper surface of the light control pattern CCP-R. The difference in height between the upper surface of the bank BMP and the upper surface of the light control pattern CCP-R may be, for example, about 2 μm to 3 μm.

[0092] The light control layer CCL may further include a barrier layer CAP, CAP-T disposed at least one above and below the light control pattern CCP-R. The barrier layer CAP, CAP-T serves to prevent the penetration of moisture and / or oxygen (hereinafter referred to as "moisture / oxygen"). The barrier layer CAP, CAP-T may be disposed above and below the light control pattern CCP-R to prevent the light control patterns CCP-R, CCP-B, and CCP-G from being exposed to moisture / oxygen.

[0093] The barrier layer may include a first barrier layer CAP adjacent to the display element layer DP-LED and a second barrier layer CAP-T separated from the display element layer DP-LED with the light control pattern CCP-R sandwiched therebetween. The first barrier layer CAP covers one side of the light control pattern CCP-R adjacent to the display element layer DP-LED, and the second barrier layer CAP-T may cover the other side of the light control pattern CCP-R adjacent to the color filter layer CFL. In addition, the barrier layers CAP and CAP-T may cover not only the light control pattern CCP-R but also the bank BMP.

[0094] The first barrier layer CAP may be disposed following the steps of the banks BMP and the light control patterns CCP-R. The second barrier layer CAP-T may cover one surface of the banks BMP and the light control patterns CCP-R adjacent to the color filter layer CFL. The second barrier layer CAP-T may be disposed directly below the low refractive layer LR.

[0095] The barrier layer CAP, CAP-T may include at least one inorganic layer. That is, the barrier layer CAP, CAP-T may include an inorganic material. For example, the barrier layer CAP, CAP-T may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, or a metal thin film with a guaranteed light transmittance. For example, the first barrier layer CAP disposed below the light control pattern CCP-R may include silicon oxynitride, and the second barrier layer CAP-T disposed above the light control pattern CCP-R may include silicon oxide. However, the embodiment is not limited thereto. Meanwhile, the barrier layer CAP, CAP-T may further include an organic film. The barrier layer CAP, CAP-T may be composed of a single layer or multiple layers. In the barrier layers CAP and CAP-T, the inorganic film protects the light control pattern CCP-R from external moisture, and the organic film may be intended to remove the step defined by the bank BMP and the light control pattern CCP-R and provide a flat base surface for the components disposed above.

[0096] A color filter layer CFL is disposed on the light control layer CCL. The color filter layer CFL includes at least one color filter CF1. The color filter CF1 transmits light in a specific wavelength range and blocks light outside the wavelength range. The color filter layer CF1 in the first pixel region PXA-R can transmit red light and block green and blue light.

[0097] The color filter CF1 includes a base resin and a dye and / or a pigment dispersed in the base resin. The base resin is a medium in which the dye and / or the pigment is dispersed, and may be made of various resin compositions that may be generally called a binder. A detailed description of the color filter CF1 will be given later.

[0098] The color filter CF1 may have a uniform thickness in the first pixel region PXA-R. The light control pattern CCP-R converts the source light including blue light into red light and provides the red light with uniform brightness in the first pixel region PXA-R to the outside.

[0099] The color filter layer CFL may include a low refractive layer LR. The low refractive layer LR may be disposed between the light control layer CCL and the color filter CF1. The low refractive layer LR may be disposed above the light control layer CCL and may block the light control pattern CCP-R from being exposed to moisture / oxygen. The low refractive layer LR may also be disposed between the light control pattern CCP-R and the color filter CF1 and may function as an optical functional layer to increase light extraction efficiency or prevent reflected light from being incident on the light control layer CCL. The low refractive layer LR may be a layer having a smaller refractive index than adjacent layers.

[0100] The low refractive layer LR is a layer having a low refractive index and may be a mixed layer of an organic material and an inorganic material. In one embodiment, the low refractive layer LR may include a polymer resin, and inorganic particles may be dispersed in the polymer resin. The polymer resin included in the low refractive layer LR may be, for example, a silicone resin and / or an acrylic silicone resin. The inorganic particles included in the low refractive layer LR may be, for example, hollow sphere silica and / or a porogen. However, the low refractive layer LR may include, but is not limited to, silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxide nitride, or a metal thin film having a high light transmittance. The low refractive layer LR may be composed of a single layer or multiple layers.

[0101] The low refractive index layer LR may have a low refractive index of 1.3 or less. In one embodiment, the refractive index of the low refractive index layer LR may be 1.2. The refractive index of the low refractive index layer LR may be 1.3 or less in the visible light range of 400 nm to 700 nm.

[0102] On the other hand, in the display device DD of one embodiment, the color filter CF1 of the color filter layer CFL may be disposed directly on the light control layer CCL, in which case the low refractive layer LR may be omitted.

[0103] In one embodiment, the display panel DP may further include a base layer BL disposed on the color filter layer CFL. The base layer BL may be a member that provides a reference surface on which the color filter layer CFL, the light control layer CCL, etc. are disposed. The base layer BL may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiment is not limited thereto, and the base layer BL may be an inorganic layer, an organic layer, or a composite material layer. Also, unlike the illustrated embodiment, the base layer BL may be omitted.

[0104] Although not shown, an anti-reflection layer may be disposed on the base layer BL. The anti-reflection layer may be a layer that reduces the reflectance of external light incident from the outside. The anti-reflection layer may be a layer that selectively transmits light emitted from the display panel DP. In one embodiment, the anti-reflection layer may be a single layer including dyes and / or pigments dispersed in a base resin. The anti-reflection layer may be provided as a single continuous layer that completely overlaps the entire first to third pixel regions PXA-R, PXA-B, and PXA-G (see FIG. 2c).

[0105] The anti-reflection layer may not include a polarizing layer, so that the light passing through the anti-reflection layer and incident on the display element layer DP-LED side may be unmodified light, and the display element layer DP-LED may receive unpolarized light from above the anti-reflection layer.

[0106] The display panel DP of one embodiment includes a lower panel including a display element layer DP-LED and an upper panel (optical structure layer OSL) including a light control layer CCL and a color filter layer CFL, and in one embodiment, a filling layer FML may be disposed between the lower panel and the upper panel OSL. In one embodiment, the filling layer FML may fill between the display element layer DP-LED and the light control layer CCL. The filling layer FML is disposed directly on the sealing layer TFE, and the first barrier layer CAP included in the light control layer CCL may be disposed directly on the filling layer FML. The lower surface of the filling layer FML may contact the upper surface of the sealing layer TFE, and the upper surface of the filling layer FML may contact the lower surface of the first barrier layer CAP.

[0107] The filling layer FML may function as a buffer between the display element layer DP-LED and the light control layer CCL. In one embodiment, the filling layer FML may have a shock absorbing function and the like, and may increase the strength of the display panel DP. The filling layer FML may be made of a filling resin including a polymer resin. For example, the filling layer FML may be made of a filling layer resin including an acrylic resin or an epoxy resin.

[0108] The filling layer FML is a separate structure from the sealing layer TFE disposed below and the first barrier layer CAP disposed above, and may be formed in separate process steps. Meanwhile, the filling layer FML may be made of a material different from each of the sealing layer TFE and the barrier layer CAP.

[0109] Referring to FIG. 2c, the display panel DP may include a base substrate BS and a circuit element layer DP-CL disposed on the base substrate BS. The circuit element layer DP-CL may be disposed on the base substrate BS. The circuit element layer DP-CL may include an insulating layer, a semiconductor pattern, a conductive pattern, a signal line, and the like. The insulating layer, the semiconductor layer, and the conductive layer are formed on the base substrate BS by a method such as coating or deposition, and then the insulating layer, the semiconductor layer, and the conductive layer may be selectively patterned by multiple photolithography processes. Then, the semiconductor pattern, the conductive pattern, and the signal line included in the circuit element layer DP-CL may be formed. In one embodiment, the circuit element layer DP-CL may include a transistor, a buffer layer, and multiple insulating layers.

[0110] The light-emitting element LED according to an embodiment may include a first electrode EL1, a second electrode EL2 facing the first electrode EL1, and an emitting layer EML disposed between the first electrode EL1 and the second electrode EL2. The emitting layer EML included in the light-emitting element LED may include an organic luminescent material or quantum dots as a luminescent material. The light-emitting element LED may further include a hole control layer HTR and an electron control layer ETR. Meanwhile, although not shown, the light-emitting element LED may further include a capping layer (not shown) disposed above the second electrode EL2.

[0111] The pixel definition film PDL is disposed on the circuit element layer DP-CL and may cover a portion of the first electrode EL1. A light-emitting opening OH is defined in the pixel definition film PDL. The light-emitting opening OH of the pixel definition film PDL exposes at least a portion of the first electrode EL1. In this embodiment, the light-emitting areas EA1, EA2, and EA3 are defined to correspond to a portion of the first electrode EL1 exposed by the light-emitting opening OH.

[0112] The display element layer DP-LED may include a first light-emitting region EA1, a second light-emitting region EA2, and a third light-emitting region EA3. The first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 may be regions divided by a pixel definition film PDL. The first light-emitting region EA1, the second light-emitting region EA2, and the third light-emitting region EA3 may correspond to the first pixel region PXA-R, the second pixel region PXA-B, and the third region PXA-G, respectively.

[0113] The light-emitting regions EA1, EA2, and EA3 may overlap with the pixel regions PXA-R, PXA-B, and PXA-G, but may not overlap with the bank well region BWA. When viewed from above, the areas of the pixel regions PXA-R, PXA-B, and PXA-G divided by the bank BMP may be larger than the areas of the light-emitting regions EA1, EA2, and EA3 divided by the pixel definition film PDL.

[0114] In the light-emitting element LED, the first electrode EL1 is disposed on the circuit element layer DP-CL. The first electrode EL1 can be an anode or a cathode. The first electrode EL1 can also be a pixel electrode. The first electrode EL1 can be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0115] The hole control layer HTR may be disposed between the first electrode EL1 and the light emitting layer EML. The hole control layer HTR may include at least one of a hole injection layer, a hole transport layer, and an electron blocking layer. The hole control layer HTR may be disposed as a common layer so as to overlap the entire light emitting areas EA1, EA2, and EA3 and the pixel defining film PDL that divides the light emitting areas EA1, EA2, and EA3. However, the embodiment is not limited thereto, and the hole control layer HTR may be provided by being patterned so as to be disposed separately corresponding to each of the light emitting areas EA1, EA2, and EA3.

[0116] The emitting layer EML is disposed on the hole control layer HRT. In one embodiment, the emitting layer EML may be provided as a common layer so as to overlap the entire emitting areas EA1, EA2, EA3 and the pixel defining film PDL that separates the emitting areas EA1, EA2, EA3. In one embodiment, the emitting layer EML may emit blue light. The emitting layer EML may overlap the entire hole control layer HTR and the electron control layer ETR.

[0117] However, the embodiment is not limited thereto, and in one embodiment, the emitting layer EML may be disposed in the emitting opening OH. That is, the emitting layer EML may be formed separately to correspond to the emitting areas EA1, EA2, and EA3 divided by the pixel defining film PDL. The emitting layers EML formed separately to correspond to the emitting areas EA1, EA2, and EA3 may all emit blue light or may emit light of different wavelength regions.

[0118] The light-emitting layer EML may have a multi-layer structure having a single layer of a single material, a single layer of a plurality of different materials, or a plurality of layers of a plurality of different materials. The light-emitting layer EML may include a fluorescent or phosphorescent material. In the light-emitting device of the embodiment, the light-emitting layer EML may include an organic light-emitting material, a metal-organic complex, or a quantum dot as a light-emitting material. Meanwhile, although the light-emitting device LED including one light-emitting layer EML is illustrated in FIG. 2b and FIG. 2c as an example, in an embodiment, the light-emitting device LED may include a plurality of light-emitting stacks each including at least one light-emitting layer.

[0119] FIG. 3 exemplarily illustrates a light-emitting element LED including a plurality of light-emitting stacks ST1, ST2, ST3, and ST4, unlike the light-emitting element of the embodiment illustrated in FIGS. 2b and 2c.

[0120] 3, the light-emitting element LED of the embodiment may include a first electrode EL1, a second electrode EL2 facing the first electrode EL1, and a plurality of first to fourth light-emitting stacks ST1, ST2, ST3, and ST4 disposed between the first electrode EL1 and the second electrode EL2. The light-emitting element LED of the embodiment may further include a capping layer CPL disposed on the second electrode EL2. Meanwhile, although FIG. 3 exemplarily illustrates the light-emitting element LED including four light-emitting stacks, the number of light-emitting stacks included in the light-emitting element LED may be less or more than this.

[0121] The light-emitting element LED may include first to third charge generation layers CGL1, CGL2, and CGL3 disposed between the first to fourth light-emitting stacks ST1, ST2, ST3, and ST4.

[0122] Each of the first to third charge generation layers CGL1, CGL2, and CGL3 may generate charges (electrons and holes) by forming a complex through an oxidation-reduction reaction when a voltage is applied. Then, the first to third charge generation layers CGL1, CGL2, and CGL3 may provide the generated charges to the adjacent stacks ST1, ST2, ST3, and ST4, respectively. The first to third charge generation layers CGL1, CGL2, and CGL3 may double the efficiency of the current generated from the adjacent stacks ST1, ST2, ST3, and ST4, and may play a role in adjusting the balance of charges between the adjacent stacks ST1, ST2, ST3, and ST4.

[0123] Each of the first to third charge generation layers CGL1, CGL2, and CGL3 may include an n-type layer and a p-type layer. The first to third charge generation layers CGL1, CGL2, and CGL3 may have a structure in which an n-type layer and a p-type layer are joined to each other. However, without being limited thereto, the first to third charge generation layers CGL1, CGL2, and CGL3 may include only one of an n-type layer and a p-type layer. The n-type layer may be a charge generation layer that provides electrons to an adjacent stack. The n-type layer may be a layer in which a base material is doped with an n-dopant. The p-type layer may be a charge generation layer that provides holes to an adjacent stack.

[0124] In one embodiment, the first to third charge generation layers CGL1, CGL2, and CGL3 may each have a thickness of 1 Å to 300 Å. For example, the first to third charge generation layers CGL1, CGL2, and CGL3 may each have a thickness of 165 Å. The concentration of n-dopant doped in the first to third charge generation layers CGL1, CGL2, and CGL3 may be 0.1% to 3%, more specifically, 1% or less. If the concentration is less than 0.1%, the effect of the first to third charge generation layers CGL1, CGL2, and CGL3 to adjust the charge balance may be almost ineffective. If the concentration is more than 3%, the light efficiency of the light emitting element LED may be reduced.

[0125] Each of the first to third charge generation layers CGL1, CGL2, and CGL3 may include a charge generation compound consisting of an organic compound of an arylamine-based material, a metal, a metal oxide, a carbide, a fluoride, or a mixture thereof. For example, the arylamine-based organic compound may include α-NPD, 2-TNATA, TDATA, MTDATA, spiro-TAD, or spiro-NPB. The metal may include cesium (Cs), molybdenum (Mo), vanadium (V), titanium (Ti), tungsten (W), barium (Ba), or lithium (Li). The metal oxide, carbide, and fluoride may include Re. 2 O 7 , MoO 3 , V 2 O 5 , WO 3 , TiO 2 , Cs 2 CO 3 , BaF, LiF, or CsF. However, the materials of the first to third charge generation layers CGL1, CGL2, and CGL3 are not limited to the above examples.

[0126] Each of the first to fourth light-emitting stacks ST1, ST2, ST3, and ST4 may include a light-emitting layer. The first light-emitting stack ST1 may include a first light-emitting layer BEML-1, the second light-emitting stack ST2 may include a second light-emitting layer BEML-2, the third light-emitting stack ST3 may include a third light-emitting layer BEML-3, and the fourth light-emitting stack ST4 may include a fourth light-emitting layer GEML. Some of the light-emitting layers included in the first to fourth light-emitting stacks ST1, ST2, ST3, and ST4 may emit substantially the same color light, while some of the light-emitting layers may emit different color lights.

[0127] In one embodiment, the first to third light emitting layers BEML-1, BEML-2, and BEML-3 of the first to third light emitting stacks ST1, ST2, and ST3 may emit substantially the same first color light. For example, the first color light may be blue light, which is the source light described above. The wavelength range of the light emitted by the first to third light emitting layers BEML-1, BEML-2, and BEML-3 may be about 420 nm to 480 nm.

[0128] The fourth light-emitting layer GEML of the fourth light-emitting stack ST4 may emit a second color light different from the first color light. For example, the second color light may be green light. The wavelength range of the light emitted by the fourth light-emitting layer GEML may be about 520 nm or more and 600 nm or less.

[0129] At least some of the first to fourth emitting layers BEML-1, BEML-2, BEML-3, and GEML may have a bilayer structure containing different host materials. For example, one layer of the bilayer structure may contain a hole-transporting host material, and the other layer may contain an electron-transporting host material. The electron-transporting host material may be a material that contains an electron-transporting partial structure in its molecular structure.

[0130] The first light-emitting stack ST1 may include a hole control layer HTR that transports holes provided from the first electrode EL1 to the first light-emitting layer BEML-1, and a first intermediate electron transport region METL1 that transports electrons generated from the first charge generation layer CGL1 to the first light-emitting layer BEML-1.

[0131] The hole control layer HTR may include a hole injection layer HIL disposed on the first electrode EL1 and a hole transport layer HTL disposed on the hole injection layer HIL. However, the hole control layer HTR may further include at least one of a hole buffer layer, a light emitting auxiliary layer, and an electron blocking layer. The hole transport layer and the hole buffer layer may be layers that compensate for a resonance distance according to the wavelength of light emitted from the light emitting layer to increase light emission efficiency. The electron blocking layer may be a layer that serves to prevent electron injection from the electron transport region to the hole transport region.

[0132] The first intermediate electron transport region METL1 may include a first intermediate electron transport layer disposed on the first light emitting layer BEML-1. However, the first intermediate electron transport region METL1 may further include at least one of an electron buffer layer and a hole blocking layer.

[0133] The second light-emitting stack ST2 further includes a first intermediate hole transport region MHTR1 that transports holes generated from the first charge generation layer CGL1 to the second light-emitting layer BEML-2, and a second intermediate electron transport region METL2 that transports electrons provided from the second charge generation layer CGL2 to the second light-emitting layer BEML-2.

[0134] The first intermediate hole transport region MHTR1 may include a first intermediate hole transport layer MHTL1 disposed on the first charge generation layer CGL1. The first intermediate hole transport region MHTR1 may further include at least one of a hole buffer layer, a light-emitting auxiliary layer, and an electron blocking layer disposed on the first intermediate hole transport layer MHTL1. The first intermediate hole transport region MHTR1 may further include a first intermediate hole injection layer MHTL1 disposed on the first charge generation layer CGL1. The first intermediate hole injection layer MHIL1 may be disposed between the first charge generation layer CGL1 and the first intermediate hole transport layer MHTL1. Unlike the illustration of FIG. 3, the first intermediate hole injection layer MHIL1 may be omitted.

[0135] The second intermediate electron transport region METL2 may include a second intermediate electron transport layer disposed on the second light-emitting layer BEML-2. However, the second intermediate electron transport region METL2 may further include at least one of an electron buffer layer and a hole blocking layer disposed between the second intermediate electron transport layer and the second light-emitting layer BEML-2.

[0136] The third light-emitting stack ST3 may include a second intermediate hole transport region MHTR2 that transports holes generated from the second charge generation layer CGL2 to the third light-emitting layer BEML-3, and a third intermediate electron transport region METL3 that transports electrons provided from the third charge generation layer CGL3 to the third light-emitting layer BEML-3.

[0137] The second intermediate hole transport region MHTR2 may include a second intermediate hole transport layer MHTL2 disposed on the second charge generation layer CGL2. However, without being limited thereto, the second intermediate hole transport region MHTR2 may further include at least one of a hole buffer layer, a light-emitting auxiliary layer, and an electron blocking layer disposed on the second intermediate hole transport layer MHTL2. The second intermediate hole transport region MHTR2 may further include a second intermediate hole injection layer MHIL2 disposed on the second charge generation layer CGL2. The second intermediate hole injection layer MHIL2 may be disposed between the second charge generation layer CGL2 and the second intermediate hole transport layer MHTR2. Unlike the illustration of FIG. 3, the second intermediate hole injection layer MHIL2 may be omitted.

[0138] The third intermediate electron transport region METL3 may include a third intermediate electron transport layer disposed on the third light-emitting layer BEML-3. However, without being limited thereto, the third intermediate electron transport region METL3 may further include at least one of an electron buffer layer and a hole blocking layer disposed between the third intermediate electron transport layer and the third light-emitting layer BEML-3.

[0139] The fourth light-emitting stack ST4 may include a third intermediate hole transport region MHTR3 that transports holes generated from the third charge generation layer CGL3 to the fourth light-emitting layer GEML, and an electron control layer ETR that transports electrons provided from the second electrode EL2 to the fourth light-emitting layer GEML.

[0140] The third intermediate hole transport region MHTR3 may include a third intermediate hole transport layer MHTL3 disposed on the third charge generation layer CGL3. However, without being limited thereto, the third intermediate hole transport region MHTR3 may further include at least one of a hole buffer layer, a light emitting auxiliary layer, and an electron blocking layer disposed on the third intermediate hole transport layer MHTL3. The third intermediate hole transport region MHTR3 may further include a third intermediate hole injection layer MHIL3 disposed on the third charge generation layer CGL3. The third intermediate hole injection layer MHIL3 may be disposed between the third charge generation layer CGL3 and the third intermediate hole transport layer MHTL3. Unlike the illustration of FIG. 3, the third intermediate hole injection layer MHIL3 may be omitted.

[0141] The electron control layer ETR may include an electron transport layer ETL disposed on the fourth light emitting layer GEML and an electron injection layer EIL disposed on the electron transport layer ETL. However, without being limited thereto, the electron control layer ETR may further include at least one of an electron buffer layer and a hole blocking layer disposed between the electron transport layer ETL and the fourth light emitting layer GEML.

[0142] In one embodiment, the light-emitting element LED may emit light in a direction from the first electrode EL1 to the second electrode EL2, and based on the light emission direction, the hole control layer HTR may be disposed below the plurality of light-emitting stacks ST1, ST2, ST3, and ST4, and the electronic control layer ETR may be disposed above the plurality of light-emitting stacks ST1, ST2, ST3, and ST4. However, without being limited thereto, based on the light emission direction, an inverted device structure may be used in which the electronic control layer ETR is disposed below the plurality of light-emitting stacks ST1, ST2, ST3, and ST4, and the hole control layer HTR is disposed above the plurality of light-emitting stacks ST1, ST2, ST3, and ST4.

[0143] Further referring to FIG. 2c, the electronic control layer ETR may be disposed between the light emitting layer EML and the second electrode EL2. The electronic control layer ETR may include at least one of an electron injection layer, an electron transport layer, and a hole blocking layer. Referring to FIG. 2c, the electronic control layer ETR may be disposed as a common layer so as to overlap the entire light emitting areas EA1, EA2, and EA3 and the pixel defining film PDL that divides the light emitting areas EA1, EA2, and EA3. However, the embodiment is not limited thereto, and the electronic control layer ETR may be provided by being patterned so as to be disposed separately corresponding to each of the light emitting areas EA1, EA2, and EA3.

[0144] The second electrode EL2 may be provided on the electronic control layer ETR. The second electrode EL2 may be a common electrode. The second electrode EL2 may be a cathode or an anode, but the embodiment is not limited thereto. For example, if the first electrode EL1 is an anode, the second electrode may be a cathode, and if the first electrode EL1 is a cathode, the second electrode EL2 may be an anode. The second electrode EL2 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0145] The encapsulation layer TFE may be disposed on the light-emitting element LED. More specifically, in one embodiment, the encapsulation layer TFE may be disposed on the second electrode EL2. Also, if the light-emitting element LED includes a capping layer CPL, the encapsulation layer TFE may be disposed on the capping layer CPL. The encapsulation layer TFE includes at least one organic film and at least one inorganic film as described above, and the inorganic film and the organic film may be alternately disposed.

[0146] The display panel DP of one embodiment may include an optical structure layer OSL disposed on the display element layer DP-LED. The optical structure layer OSL may include a light control layer CCL, a color filter layer CFL, and a base layer BL.

[0147] The light control layer CCL may include a light converter. The light converter may be a quantum dot or a phosphor. The light converter may convert the wavelength of the provided light and emit it. That is, the light control layer CCL may be a layer that includes at least a quantum dot or a layer that includes a phosphor.

[0148] The light control layer CCL may include a plurality of light control patterns CCP-R, CCP-B, and CCP-G. The light control patterns CCP-R, CCP-B, and CCP-G may be spaced apart from one another. The light control patterns CCP-R, CCP-B, and CCP-G may be arranged spaced apart from one another by the bank BMP. The light control patterns CCP-R, CCP-B, and CCP-G may be arranged within the bank opening BW-OH defined by the bank BMP. However, the embodiment is not limited thereto. In FIG. 2c, the bank BMP is shown to have a rectangular shape on the cross section and not overlap with the light control patterns CCP-R, CCP-B, and CCP-G, but the edges of the light control patterns CCP-R, CCP-B, and CCP-G may at least partially overlap with the bank BMP. The bank BMP may have a trapezoidal shape on the cross section. The bank BMP may have a shape whose cross-sectional width increases as it becomes closer to the display element layer DP-LED.

[0149] The light control patterns CCP-R, CCP-B, and CCP-G may be portions that convert the wavelength of light provided from the display element layer DP-LED or transmit the provided light. The light control patterns CCP-R, CCP-B, and CCP-G may be formed by an inkjet process. A liquid ink composition is provided in the bank opening BW-OH, and the provided ink composition is polymerized by a thermal curing process or a photocuring process to form the light control patterns CCP-R, CCP-B, and CCP-G.

[0150] The light control layer CCL may include a first light control pattern CCP-R including first quantum dots that convert source light provided from the light-emitting element LED into first light, a second light control pattern CCP-B that transmits the source light, and a third light control pattern CCP-G including second quantum dots that convert the source light into second light.

[0151] In one embodiment, the first light control pattern CCP-R may provide red light as the first light, and the second light control pattern CCP-B may transmit and provide blue light of the source light provided from the light emitting element LED. The third light control pattern CCP-G may provide green light as the second light. For example, the first quantum dots may be red quantum dots, and the second quantum dots may be green quantum dots.

[0152] In addition, the light control layer CCL may further include a scatterer. The first light control pattern CCP-R may include a first quantum dot and a scatterer, the third light control pattern CCP-G may include a second quantum dot and a scatterer, and the second light control pattern CCP-B may include a scatterer without including a quantum dot.

[0153] Each of the first light control pattern CCP-R, the second light control pattern CCP-B, and the third light control pattern CCP-G may include a base resin in which quantum dots and scatterers are dispersed. In one embodiment, the first light control pattern CCP-R may include a first quantum dot and a scatterer dispersed in a base resin, the third light control pattern CCP-G may include a second quantum dot and a scatterer dispersed in a base resin, and the second light control pattern CCP-B may include a scatterer dispersed in a base resin.

[0154] The light control layer CCL may further include barrier layers CAP and CAP-T arranged at least one above and below the light control unit. The barrier layer may include a first barrier layer CAP adjacent to the display element layer DP-LED and a second barrier layer CAP-T separated from the display element layer DP-LED with the light control pattern CCP-R sandwiched therebetween.

[0155] In the display panel DP, the optical structure OSL includes a color filter layer CFL disposed on the light control layer CCL. The color filter layer CFL may include color filters CF1, CF2, and CF3. The color filter layer CFL may include a first color filter CF1 that transmits a first light, a second color filter CF2 that transmits a portion of the source light, and a third color filter CF3 that transmits a second light. In one embodiment, the first color filter CF1 may be a red filter, the second color filter CF2 may be a blue filter, and the third color filter CF3 may be a green filter.

[0156] Each of the filters CF1, CF2, and CF3 includes a polymer photosensitive resin and a colorant. The first color filter CF1 may include a red colorant, the second color filter CF2 may include a blue colorant, and the third color filter CF3 may include a green colorant. The first color filter unit CF1 may include a red pigment or a red dye, the second color filter unit CF2 may include a blue pigment or a blue dye, and the third color filter unit CF3 may include a green pigment or a green dye.

[0157] The first, second, and third color filters CF1, CF2, and CF3 may be arranged corresponding to the first pixel region PXA-R, the second pixel region PXA-B, and the third pixel region PXA-G, respectively. Also, the first, second, and third color filters CF1, CF2, and CF3 may be arranged corresponding to the first, second, and third light control patterns CCP-R, CCP-B, and CCP-G, respectively.

[0158] In addition, a plurality of color filters CF1, CF2, CF3 that transmit different light may be arranged in a superimposed manner in the peripheral region NPXA arranged between the pixel regions PXA-R, PXA-B, PXA-G. A plurality of color filters CF1, CF2, CF3 may be arranged in a superimposed manner in a third direction DR3 that is a thickness direction, to divide the boundary between the adjacent light-emitting regions PXA-R, PXA-B, PXA-G. Meanwhile, unlike the illustrated example, the color filter layer CFL may further include a light-shielding portion (not shown) to divide the boundary between the adjacent color filters CF1, CF2, CF3. The light-shielding portion (not shown) may be formed of a blue filter, or may be formed of an organic light-shielding material or an inorganic light-shielding material including a black pigment or a black dye.

[0159] The color filter layer CFL may include a low refractive layer LR. The low refractive layer LR may be disposed between the light control layer CCL and the color filters CF1, CF2, and CF3. The low refractive layer LR may be disposed above the light control layer CCL and may block the light control patterns CCP-R, CCP-B, and CCP-G from being exposed to moisture / oxygen. The low refractive layer LR may also be disposed between the light control patterns CCP-R, CCP-B, and CCP-G and the color filters CF1, CF2, and CF3 and may function as an optical functional layer to increase light extraction efficiency or prevent reflected light from entering the light control layer CCL. The low refractive layer LR may be a layer having a smaller refractive index than adjacent layers.

[0160] The low refractive layer LR may contain a polymer resin, and inorganic particles may be dispersed in the polymer resin. The polymer resin contained in the low refractive layer LR may be, for example, a silicone resin and / or an acrylic silicone resin. The inorganic particles contained in the low refractive layer LR may be, for example, hollow silica and / or a porogen. The low refractive layer LR may be composed of a single layer or multiple layers.

[0161] On the other hand, in the display device DD of one embodiment, the color filters CF1, CF2, CF3 of the color filter layer CFL can be disposed directly on the light control layer CCL, in which case the low refractive layer LR can be omitted.

[0162] In one embodiment, the optical structure layer OSL may further include a base layer BL disposed on the color filter layer CFL. The base layer BL may be a member that provides a base surface on which the color filter layer CFL, the light control layer CCL, etc. are disposed. The base layer BL may be a glass substrate, a metal substrate, a plastic substrate, etc. However, the embodiment is not limited thereto, and the base layer BL may be an inorganic layer, an organic layer, or a composite material layer. Also, unlike the illustrated embodiment, the base layer BL may be omitted.

[0163] Further referring to FIG. 2b and FIG. 2c, each of the first color filter CF1 and the second color filter CF2 may have a transmittance limited to a certain range depending on the colorant, composition, thickness, and the like contained therein.

[0164] In one embodiment, the first color filter CF1 included in the color filter layer CFL may have a light transmittance of 70% or less in a wavelength range of 600 nm to 640 nm. The first color filter CF1 has a peak wavelength (λ max In one embodiment, the first light has a peak wavelength in a wavelength range of 620 nm to 640 nm, and the first color filter CF1 may have a light transmittance of 60% to 70% in the entire range of 620 nm to 640 nm, which is the peak wavelength range of the first light, and the adjacent range of 600 nm to less than 620 nm.

[0165] The first color filter CF1 may include a point where the light transmittance is 10% in a wavelength range of more than 590 nm and less than 610 nm. That is, in the light transmission spectrum of the first color filter CF1, the point where the light transmittance is 10% may be located in a wavelength range of more than 590 nm and less than 610 nm, which is a range adjacent to the peak wavelength range of the first light. Since the point where the light transmittance of the first color filter CF1 is 10% is located in a wavelength range of more than 590 nm and less than 610 nm, which is a range adjacent to the peak wavelength range of the first light, the light transmittance spectrum of the first color filter CF1 may have a narrow shape in which the absorptance increases specific to a target wavelength and decreases significantly as the wavelength varies.

[0166] The first color filter CF1 may have a transmittance of less than 10% in a wavelength range of 590 nm or less. That is, the first color filter CF1 may have a low light transmittance of less than 10% in a wavelength range of 590 nm or less that is out of the peak wavelength range of the first light. As a result, the first color filter CF1 may block light of wavelengths other than the first light, and improve the color reproduction ratio of the display panel DP.

[0167] In one embodiment, the second color filter CF2 included in the color filter layer CFL may have a light transmittance of 75% or less in a wavelength range of 430 nm to 470 nm. The second color filter CF2 has a peak wavelength (λ max In one embodiment, the source light has a peak wavelength in a wavelength range of 440 nm to 460 nm, and the second color filter CF2 may have a light transmittance of 65% to 75% in the entire range of the peak wavelength of the source light, 440 nm to 460 nm, the adjacent ranges of 430 nm to less than 440 nm, and the ranges of more than 460 nm to 470 nm.

[0168] The half-width of the light transmittance spectrum of the second color filter CF2 may be 95 nm or less. Since the second color filter CF2 has a light transmittance spectrum with a half-width of 95 nm or less, the light transmittance spectrum of the second color filter CF2 may have a narrow shape in which the absorptance increases specific to a target wavelength and decreases significantly as the wavelength varies.

[0169] The first color filter CF1 includes a red colorant. The first color filter CF1 may include a red pigment or a red dye. In one embodiment, the first color filter CF1 includes CI Pigment Red (red hue) 1, 2, 3, 4, 5, 7, 9, 12, 14, 23, 38, 41, 42, 48, 48:1, 48:2, 48:3, 48:4, 48:5, 48:6, 49, 49:1, 51:1, 52:1, 52:2, 53, 53:1, 53:3, 57, 57:1, 57:2, 57:3, 58:2, 58:4, 63:1, 81, 81:1, 81:2, 81:3, 81:4, 81:5, 81:6, 88, 112, 122, 123, 144, 146, 148, 1 49, 150, 166, 168, 169, 170, 175, 176, 177, 178, 179, 184, 185, 187, 188, 190, 192, 194, 200, 200:1, 202, 206, 207, 208, 209, 210, 214, 216, 220, 221, 224, 242, 246, 247, 251, 253, 254, 255, 256, 257, 260, 262, 264, 270, 272, or 291. In one embodiment, the first color filter CF1 may include CI Pigment Red 179 or CI Pigment Red 264. In addition, the first color filter CF1 may further contain a perylene-based, perinone-based, quinacridone-based, quinacridonequinone-based, anthraquinone-based, anthranthrone-based, benzimidazolone-based, disazo-based, azo-based, indanthrone-based, phthalocyanine-based, triarylcarbonium-based, dioxazine-based, aminoanthraquinone-based, thioindigo-based, isoindoline-based, isoindolinone-based, pyranthrone-based, or isoviolanthrone-based red pigment, or a mixture thereof.

[0170] The first color filter CF1 may further include a black colorant in addition to the red colorant. In one embodiment, the first color filter CF1 may include at least one black pigment selected from the group consisting of carbon black, aniline black, lactam black, and perylene black. In one embodiment, the first color filter CF1 may include carbon black or lactam black as the black colorant.

[0171] In the first color filter CF1, the black colorant may be 1 wt % or less of the total weight of the red and black colorants. The first color filter CF1 may contain only red colorant as a colorant, or may contain 1% or less of black colorant and the remaining red colorant. Based on the total weight % of the first color filter CF1, the total colorant may be 6% to 11%. The content ratio of the colorants contained in the first color filter CF1 may vary depending on the thickness of the first color filter CF1.

[0172] The second color filter CF2 includes a blue colorant. The second color filter CF2 may include a blue pigment or a blue dye. In one embodiment, the second color filter CF2 may include, for example, a copper phthalocyanine pigment. The second color filter CF2 may include at least one blue pigment selected from the group consisting of CI Pigment B15, CI Pigment B15:1, CI Pigment B15:2, CI Pigment B15:3, CI Pigment B15:4, CI Pigment B15:6, CI Pigment B16, CI Pigment B22, CI Pigment B60, and CI Pigment B64. In one embodiment, the second color filter CF2 may include CI Pigment B15:6. Alternatively, the second color filter CF2 may include a blue dye.

[0173] The second color filter CF2 may further include a purple colorant in addition to the blue colorant. In one embodiment, the second color filter CF2 may include at least one purple pigment among CI Pigment V1, CI Pigment V19, CI Pigment V23, CI Pigment V27, CI Pigment V29, CI Pigment V30, CI Pigment V32, CI Pigment V37, CI Pigment V40, CI Pigment V42, and CI Pigment V50. In one embodiment, the second color filter CF2 may include CI Pigment V23. Or, the second color filter CF2 may include a purple dye.

[0174] In the second color filter CF2, the weight ratio of the blue colorant to the purple colorant may be 70:30 to 80:20. The second color filter CF2 may contain 70% to 80% blue colorant and the remaining purple colorant. Based on the total weight percentage of the second color filter CF2, the total colorant may be contained in an amount of 3% to 7%. The content ratio of the colorant contained in the second color filter CF2 may vary depending on the thickness of the second color filter CF2.

[0175] The thickness of the first color filter CF1 may be greater than the thickness of the second color filter CF2. In one embodiment, the first color filter CF1 has a first thickness d1, and the second color filter CF2 has a second thickness d2, where the first thickness d1 is greater than the second thickness d2. In one embodiment, the first thickness d1 may be greater than or equal to about 3 μm and less than or equal to about 5.5 μm. The second thickness d2 may be greater than or equal to about 1.8 μm and less than or equal to about 4.2 μm. Meanwhile, as shown in FIG. 2c, the third color filter CF3 may have a thickness less than the thickness of the first color filter CF1 and greater than the thickness of the second color filter CF2. In one embodiment, the thickness of the third color filter CF3 may be greater than or equal to about 2.4 μm and less than or equal to about 4.8 μm.

[0176] In one embodiment, the color filter layer CFL can have a high color reproduction rate by adjusting the transmittance at the peak wavelength of light provided from the light control patterns CCP-R and CCP-B arranged below the first color filter CF1 and the second color filter CF2, respectively, and the transmittance and half-width of light in an adjacent wavelength range to within a certain range.

[0177] In the color filter layer CFL according to an embodiment, the first color filter CF1 and the second color filter CF2 adjust the transmittance at the peak wavelength of light provided from below to a range of 70% or less and a range of 75% or less, respectively, to narrow the wavelength-specific width of the spectrum of the light transmittance. The display panel DP according to an embodiment of the present invention has a structure in which a polarizing layer is omitted, and adjusts the transmittance at the peak wavelength of light provided from a light source to a range of 70% or less and a range of 75% or less, respectively, to adjust the reflectance and transmittance of light, which are in a trade-off relationship, even without the polarizing layer, to narrow the wavelength-specific width of the spectrum of the light transmittance. As a result, it is possible to selectively transmit light of a specific wavelength range among the light provided from below, while reducing light reflected by external light. As a result, the display panel DP including the color filter layer CFL according to an embodiment of the present invention may have low reflectance and high color reproducibility.

[0178] Fig. 4a is a graph showing the light transmittance of a first color filter included in a display panel according to an embodiment of the present invention, a graph showing the light transmittance of a color filter of a comparative example, and a graph showing the light transmittance emitted from a light source of an embodiment. Fig. 4b is a graph showing the light transmittance of a second color filter included in a display panel according to an embodiment of the present invention, and a graph showing the light transmittance of a color filter of a comparative example. In Fig. 4a, the "light source" graph shows the emission spectrum of the first light after the source light provided from the light emitting element LED shown in Fig. 2c passes through the first light control pattern CCP-R.

[0179] Meanwhile, the transmittance of each of the first and second color filters was measured using an LCF-2100QD spectrometer manufactured by OTSUKA ELECTRONICS CO., LTD. by forming the first and second color filters on a glass substrate, placing them on a stage, and obtaining the spectral values ​​of light provided from below the glass substrate after passing through the first and second color filters.

[0180] The reflectance of each of the first and second color filters was measured using a CM-2600D spectrophotometer manufactured by KONICA MINOLTA, INC. by forming the first and second color filters on a glass substrate, placing them on a stage, irradiating the upper surfaces of the first and second color filters with light at an oblique angle, and measuring the light that was reflected after hitting the sample and scattered while bouncing around inside an integrating sphere, and then measuring the uniform light that was bounced around to calculate the reflectance.

[0181] When the graph shown in FIG. 4a is examined, it can be seen that the first light has a maximum peak wavelength (λ) at about 630 nm, more specifically, in the wavelength range of 620 nm to 640 nm, as described above. max As described above, the first color filter of the embodiment has a peak wavelength (λ max ) at 630 nm, the light transmittance (T max In contrast, the color filter of the comparative example has a peak wavelength (λ max ) in the light transmission spectrum, it can be confirmed that the first color filter of the embodiment has a high transmittance of 90% or more. 10 ) is located in the wavelength range from 590 nm to 610 nm (λ T10 In contrast, the color filter of the comparative example has a wavelength of λ T10 It can be seen that the point where the light transmittance is 10% in the light transmission spectrum of the color filter of the comparative example is located in the wavelength range of about 580 nm.

[0182] 4b, the second light provided to the second color filter of the embodiment and the color filter of the comparative example has a maximum peak wavelength (λ) in the wavelength range of 430 nm to 470 nm, more specifically, at about 450 nm. max On the other hand, the second color filter of the embodiment has a peak wavelength (λ max ) at 450 nm, the light transmittance is 75% or less (T max In contrast, the color filter of the comparative example has a peak wavelength (λ max ) it can be confirmed that the transmittance is as high as 80% or more.

[0183] Table 1 below shows the light transmittance, reflectance, and color matching rate of the display panel including the color filter layer of the embodiment and the comparative example. In Table 1, the color filter layer of the embodiment is a color filter layer including the first color filter and the second color filter as described above in the description of FIG. 2b and FIG. 2c. That is, the first color filter included in the color filter layer of the embodiment has a light transmittance of 64.32% at 630 nm, and the point where the light transmittance is 10% in the light transmission spectrum is located at 599 nm. The second color filter included in the color filter layer of the embodiment has a light transmittance of 71.76% at 440 nm, and the half width wavelength of the light transmittance spectrum is 90 nm.

[0184] In the color filter layer of the comparative example, unlike the color filter layer of the embodiment, the red color filter corresponding to the first color filter has a light transmittance of 95.66% at 630 nm, and the point where the light transmittance is 10% in the light transmission spectrum is located at 587 nm. In the color filter layer of the comparative example, the blue color filter corresponding to the second color filter has a light transmittance of 85.58% at 440 nm, and the half width wavelength of the light transmittance spectrum is 108 nm.

[0185] In Table 1, the color match rate was evaluated based on the BT2020 color gamut and the DCI color gamut.

[0186] [Table 1]

[0187] Referring to the results in Table 1, it can be seen that the display panel including the color filter layer of the embodiment has a significantly reduced reflectance at the upper part of the panel and an improved color matching rate compared to the display panel including the color filter layer of the comparative example. From the results in Table 1, it can be seen that the color filter layer of the embodiment selectively transmits light of a specific wavelength range among light provided from below while reducing light reflected by external light by adjusting the transmittance at the peak wavelength of light provided from a light source, the light transmittance in an adjacent wavelength range, and the half-width within a certain range, thereby realizing low reflectance and high color reproduction rate when applied to a display panel.

[0188] Although the present invention has been described above with reference to preferred embodiments, it should be understood that the present invention may be modified and changed in various ways by those skilled in the art or those having ordinary knowledge in the art without departing from the spirit and technical scope of the present invention as set forth in the claims below. Therefore, the technical scope of the present invention should be determined by the claims, not by the contents of the detailed description of the specification. [Industrial Applicability]

[0189] Recent display panels include different types of light control patterns for each pixel to generate color images, and have a wide viewing angle and excellent color reproducibility. However, display panels including light control patterns may have a reduced display efficiency due to reflection of external light on the surface of the light control pattern. Therefore, the present invention provides a display panel with improved color reproducibility by adjusting the transmittance of a color filter at a peak wavelength, the light transmittance and half-width in adjacent wavelength ranges for light provided from a light source to within a certain range, thereby optimizing the transmission efficiency while reducing the reflectance, and has high industrial applicability.

Claims

1. a light-emitting element including a first electrode, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer, the light-emitting element outputting source light; a light control layer disposed on the light emitting element, the light control layer including a first light control pattern for converting the source light into a first light and a second light control pattern for transmitting the source light; a color filter layer disposed on the light control layer, the color filter layer including a first color filter overlapping the first light control pattern and a second color filter overlapping the second light control pattern; the light transmittance of the first color filter in the wavelength range of 600 nm or more and 640 nm or less is 70% or less; A display panel, wherein the second color filter has a light transmittance of 75% or less in a wavelength range of 430 nm to 470 nm.

2. The display panel of claim 1 , wherein the first color filter includes a point having a light transmittance of 10% in a wavelength range of more than 590 nm and less than or equal to 610 nm.

3. The display panel of claim 2 , wherein the first color filter has a transmittance of less than 10% in a wavelength range of 590 nm or less.

4. The display panel according to claim 2 , wherein the transmittance of the first color filter and the second color filter is measured by an LCF-2100QD spectrometer.

5. 2. The display panel according to claim 1, wherein the second color filter has a half-width of a light transmittance spectrum of 95 nm or less.

6. the wavelength of the first light is longer than the wavelength of the source light; The display panel of claim 5 , wherein the first light control pattern includes first quantum dots that convert the source light into the first light.

7. The display panel of claim 1 , wherein the first color filter includes a red color material and the second color filter includes a blue color material.

8. The first color filter further includes a black colorant, 8. The display panel according to claim 7, wherein the black colorant is contained in an amount of 1% by weight or less with respect to the total weight of the red colorant and the black colorant.

9. the second color filter further comprises a purple colorant; 8. The display panel according to claim 7, wherein a weight ratio of the blue colorant to the purple colorant is in the range of 70:30 to 80:

20.

10. The thickness of the first color filter is 3 μm or more and 5.5 μm or less, 2. The display panel according to claim 1, wherein the second color filter has a thickness of 1.8 [mu]m or more and 4.2 [mu]m or less.

11. A base substrate disposed under the light-emitting element; The display panel according to claim 1 , further comprising: a base layer disposed on the color filter layer.

12. The display panel of claim 11 , further comprising an anti-reflection layer disposed on the base layer.

13. The display panel of claim 12 , wherein the light emitting element receives unpolarized incident light from above the anti-reflection layer.

14. the color filter layer further includes a low refractive index layer disposed between the first color filter, the second color filter, and the light control layer; 2. The display panel according to claim 1, wherein the refractive index of the low refractive layer is 1.3 or less.

15. The display panel of claim 1 , wherein the light-emitting element is disposed between the first electrode and the second electrode, and includes a plurality of light-emitting stacks, each of which includes the light-emitting layer.

16. The plurality of emissive stacks include: a first light-emitting stack disposed over the first electrode and including a first light-emitting layer; a charge generation layer disposed over the first light emitting stack; a second light-emitting stack disposed over the charge generating layer, the second light-emitting stack comprising a second light-emitting layer; The display panel of claim 15 , wherein the first light-emitting layer emits light of a different color from the second light-emitting layer.

17. a light control layer including a first light control pattern including quantum dots that convert the wavelength of incident light and a second light control pattern that transmits the incident light; a color filter layer disposed on the light control layer, the color filter layer including a first color filter overlapping the first light control pattern and a second color filter overlapping the second light control pattern; the light transmittance of the first color filter in the wavelength range of 600 nm or more and 640 nm or less is 70% or less; The optical member has a light transmittance of 75% or less in a wavelength range of 430 nm or more and 470 nm or less of the second color filter.

18. The optical member according to claim 17 , wherein the first color filter has a thickness greater than a thickness of the second color filter.

19. The thickness of the first color filter is 3 μm or more and 5.5 μm or less, The optical member according to claim 17 , wherein the second color filter has a thickness of 1.8 μm to 4.2 μm.

20. 18. The optical member according to claim 17, wherein the half width of the second color filter is 95 nm or less.

21. a lower panel including a display element layer and an encapsulation layer disposed over the display element layer; an upper panel disposed over the lower panel; a filling layer disposed between the lower panel and the upper panel; The top panel comprises: a light control layer disposed on the filling layer, the light control layer including a first light control pattern that converts a source light into a first light and a second light control pattern that transmits the source light; a color filter layer disposed on the light control layer, the color filter layer including a first color filter overlapping the first light control pattern and a second color filter overlapping the second light control pattern; The thickness of the first color filter is 3 μm or more and 5.5 μm or less, The second color filter has a thickness of 1.8 μm or more and 4.2 μm or less.

22. further comprising an anti-reflective layer disposed over the color filter layer; 22. The display panel of claim 21, wherein the display element layer receives unpolarized incident light from above the anti-reflection layer.

Images