Light-emitting display device and color conversion panel

Abstract

According to an embodiment, the light emitting display device includes a lower panel including an anode electrode, a light emitting layer, a cathode electrode, and a pixel defining film having an opening for a light emitting diode exposing a portion of the anode electrode; and an upper panel located above the lower panel and including a partition wall and a plurality of spacers, the partition wall can overlap the plurality of spacers in a plane and includes a plurality of spacer forming portions extending elongated in a first direction, and the plurality of spacers overlap a portion of the plurality of spacer forming portions.

Description

[Technical field]

[0001] The present disclosure relates to light-emitting displays and color conversion panels, and more particularly to light-emitting displays and color conversion panels that include spacers. [Background technology]

[0002] Recently, with the development of display-related technologies, display devices that can be transformed during use, such as by folding, rolling up into a roll, stretching like a rubber band, etc., are being researched and developed. These displays can be transformed into various shapes, so they can meet both the demand for larger displays during use and the demand for smaller displays for portability.

[0003] When a display device is folded or rolled, stress is applied to the components of the display device. Such stress may cause damage to the display panel and degrade the display quality. Light-emitting displays are devices that display screens and include liquid crystal displays (LCDs) and organic light-emitting displays (OLEDs). Such light-emitting displays are used in a variety of electronic devices such as mobile phones, navigation systems, digital cameras, e-books, portable game consoles, and various terminals.

[0004] An OLED display includes two electrodes and an organic light-emitting layer between them. Electrons injected from one electrode combine with holes injected from the other electrode in the organic light-emitting layer to form excitons. As the excitons change from an excited state to a ground state, they release energy and emit light.

[0005] Recently, in order to realize a light emitting display device having a high color reproduction ratio with reduced light loss, a light emitting display device including a color conversion panel has been proposed. The color conversion panel may include a color conversion layer including semiconductor nanocrystals such as quantum dots, and may convert incident light into different colors. Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the embodiment is to form spacers on a color conversion panel in a light-emitting display device by an inkjet method. [Means for solving the problem]

[0007] According to one embodiment, the light emitting display device includes a lower panel including an anode electrode, a light emitting layer, a cathode electrode, and a pixel defining film having an opening for a light emitting diode exposing a portion of the anode electrode; and an upper panel located above the lower panel and including a partition wall and a plurality of spacers, the partition wall being capable of overlapping with the plurality of spacers in a plane and including a plurality of spacer forming portions extending elongately in a first direction, the plurality of spacers overlapping with a portion of the plurality of spacer forming portions.

[0008] The spacing between adjacent spacers in the first direction may be equal to an integer multiple of the spacing between adjacent pixels in the first direction, and the spacing between adjacent spacers in a second direction perpendicular to the first direction may not be equal to an integer multiple of the spacing between adjacent pixels in the second direction.

[0009] The first direction may be the same as an extension direction of a head of an ink-jet device that forms the spacer, and may be a direction perpendicular to a direction in which the head of the ink-jet device moves.

[0010] The spacers may have a diameter of 10 μm to 30 μm and a height of 2 μm to 10 μm.

[0011] A margin in the first direction excluding the spacer in the spacer forming portion may be 14.1 μm to 70.5 μm.

[0012] The head of the inkjet equipment may include a plurality of nozzles, and the margin in the first direction may be equal to a minimum nozzle-to-nozzle spacing in the first direction among the plurality of nozzles.

[0013] The length of the spacer forming portion in the first direction may be not less than 24.1 μm and not more than 90.5 μm.

[0014] The partition wall may further include an additional margin portion located around the spacer forming portion, and the additional margin portion may have a width of 5 μm to 15 μm.

[0015] The planar shape of the additional margin portion may be the same as or different from the planar shape of the spacer forming portion.

[0016] The upper panel further includes an upper capping layer, the upper capping layer including one of silicon nitride (SiNx), silicon oxide (SiOx) and silicon oxynitride (SiOxNy), and the upper capping layer can cover the partition wall and the spacer.

[0017] The upper panel may further include an upper capping layer, the upper capping layer including one of silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and the upper capping layer may be located between the partition wall and the spacer.

[0018] The partition may include a first opening, a second opening, and a third opening, and the upper panel may further include a first color conversion layer located in the first opening, a second color conversion layer located in the second opening, and a transmissive layer located in the third opening.

[0019] The pixel defining film includes a plurality of openings for the light emitting diodes, and the plurality of openings for the light emitting diodes can overlap in a plane with the first opening, the second opening, and the third opening of the partition, respectively.

[0020] The upper panel may further include a first color filter, a second color filter, and a third color filter, wherein the first color filter overlaps the first color conversion layer in a plane, the second color filter overlaps the second color conversion layer in a plane, and the third color filter overlaps the transmissive layer in a plane, and a light-shielding region where at least two of the first color filter, the second color filter, and the third color filter overlap may overlap the partition wall in a plane.

[0021] The partition wall may further include a dummy opening, and the dummy opening may overlap the light-shielding region in a plan view.

[0022] A color conversion panel according to one embodiment includes a plurality of spacers; a partition including a plurality of spacer forming portions that can overlap the plurality of spacers in a plane and extend long in a first direction, the partition including a first opening, a second opening, and a third opening; a first color conversion layer located in the first opening; a second color conversion layer located in the second opening; and a transmissive layer located in the third opening, wherein the plurality of spacers each overlap a portion of the plurality of spacer forming portions.

[0023] The spacers may be spaced apart from one another in the first direction by different intervals from one another in the second direction perpendicular to the first direction.

[0024] The first direction may be the same as an extension direction of a head in an inkjet apparatus that forms the spacer, and may be a direction perpendicular to a direction in which the head moves in the inkjet apparatus.

[0025] The partition wall may further include a plurality of additional margin portions located around each of the plurality of spacer forming portions, each of the plurality of spacers having a diameter of 10 μm or more and 30 μm or less and a height of 2 μm or more and 10 μm or less, a margin in the first direction excluding the spacers located in each of the plurality of spacer forming portions may be 14.1 μm or more and 70.5 μm, and each of the plurality of additional margin portions may have a width of 5 μm or more and 15 μm or less.

[0026] The pixel may further include a first color filter, a second color filter, and a third color filter, wherein the first color filter overlaps with the first color conversion layer in a plane, the second color filter overlaps with the second color conversion layer in a plane, and the third color filter overlaps with the transparent layer in a plane, and a light-shielding region where at least two of the first color filter, the second color filter, and the third color filter overlap overlaps with the partition in a plane, and the partition may further include a dummy opening, and the dummy opening may overlap with the light-shielding region in a plane. Effect of the Invention

[0027] According to the embodiment, among the barrier ribs located on the color conversion panel in the light emitting display device, the barrier ribs in the portion where the spacers are to be formed are formed long in one direction, so that the spacers can be formed thereon by an inkjet method. [Brief description of the drawings]

[0028] [Figure 1] 1 is a schematic cross-sectional view of a light emitting display device according to an embodiment; [Diagram 2] 1 is a cross-sectional view illustrating a color conversion panel in a light emitting display device according to an embodiment. [Diagram 3] 3 is a cross-sectional view showing the light emitting display device according to the embodiment of FIG. 2. [Figure 4] 4 is a diagram illustrating a step of forming spacers on a color conversion panel of a light emitting display device by an inkjet method, according to an embodiment. [Diagram 5]1 is a diagram illustrating a head of an inkjet apparatus according to an embodiment. [Figure 6] FIG. 2 is a plan view showing a spacer and partitions around the spacer according to one embodiment. [Figure 7] 1 is a diagram showing the position of a spacer on a plane according to an embodiment; [Figure 8] 1 is a plan view of a color conversion panel of a light emitting display device according to an embodiment; [Figure 9] FIG. 13 is a plan view showing a spacer and partition walls around the spacer according to a comparative example. [Figure 10] 11 is a plan view of a color conversion panel of a light emitting display device according to a comparative example. [Figure 11] 1A-1C are plan views illustrating a spacer and a partition around the spacer according to various embodiments. [Figure 12] 1A-1C are plan views illustrating a spacer and a partition around the spacer according to various embodiments. [Figure 13] 1A-1C are plan views illustrating a spacer and a partition around the spacer according to various embodiments. [Figure 14] 1A-1C are plan views illustrating a spacer and a partition around the spacer according to various embodiments. [Figure 15] 1A-1C are plan views illustrating a spacer and a partition around the spacer according to various embodiments. [Figure 16] 13 is a plan view of a color conversion panel of a light emitting display device according to another embodiment. FIG. [Figure 17] 13 is a plan view of a color conversion panel of a light emitting display device according to another embodiment. FIG. [Figure 18] 11 is a cross-sectional view illustrating a portion of a light emitting display device according to another embodiment. [Figure 19] 19 is a cross-sectional view showing the light emitting display device according to the embodiment of FIG. 18. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] According to one embodiment, the light emitting display device includes a lower panel including an anode electrode, a light emitting layer, a cathode electrode, and a pixel defining film having an opening for a light emitting diode exposing a portion of the anode electrode; and an upper panel located above the lower panel and including a partition wall and a plurality of spacers, the partition wall can overlap the plurality of spacers in a plane and includes a plurality of spacer forming portions extending elongated in a first direction, and the plurality of spacers overlap a portion of the plurality of spacer forming portions.

[0030] <Mode for carrying out the invention> DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention. As such, the present invention may be embodied in many different forms and is not limited to the embodiments set forth herein.

[0031] In order to clearly explain the present invention, parts unnecessary for the explanation are omitted, and the same reference numerals are used throughout the specification to refer to the same or similar components.

[0032] In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and the present invention is not necessarily limited to those shown in the drawings. In the drawings, thicknesses are enlarged to clearly show multiple layers and regions. In the drawings, thicknesses of some layers and regions are exaggerated for convenience of explanation.

[0033] In addition, when a part such as a layer, film, region, plate, or component is said to be "on" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part in between. Conversely, when a part is said to be "directly on" another part, it means that there is no other part in between. In addition, being "on" a reference part means being located above or below the reference part, and does not necessarily mean being located "on" in the opposite direction to gravity.

[0034] Furthermore, throughout the specification, when a part is said to "comprise" a certain element, this does not mean that it excludes other elements and may further include other elements, unless specifically stated to the contrary.

[0035] Also, throughout the specification, a reference to "in a plane" means when the subject part is viewed from above, and a reference to "in cross section" means when the subject part is cut vertically and viewed from the side.

[0036] In addition, throughout the specification, when the term "connected" is used, this does not only mean that two or more components are directly connected, but also that two or more components are indirectly connected through other components, that they are physically connected or electrically connected, and may also include that parts that are referred to by different names depending on their position or function but are substantially integrated are connected to each other.

[0037] In addition, throughout the specification, when a portion such as a wiring, layer, film, region, plate, component, etc. is referred to as "extending in a first direction or a second direction," this does not only mean a linear shape extending straight in that direction, but also a structure that generally extends along the first direction or the second direction, and includes a structure that is partially folded, has a zigzag structure, or is extended while including a curved structure.

[0038] In addition, electronic devices (e.g., mobile phones, TVs, monitors, laptops, etc.) that include light-emitting display devices, display panels, etc. described in the specification, and electronic devices that include light-emitting display devices, display panels, etc. manufactured by the manufacturing methods described in the specification are not excluded from the scope of rights of this specification.

[0039] Hereinafter, a light emitting display device according to an embodiment will be described with reference to FIG. 1 to FIG.

[0040] FIG. 1 is a schematic cross-sectional view of an organic emissive display device according to an embodiment, FIG. 2 is a cross-sectional view of a color conversion panel in the organic emissive display device according to an embodiment, and FIG. 3 is a cross-sectional view of the organic emissive display device according to the embodiment of FIG.

[0041] As shown in FIG. 1, a light emitting display device according to an embodiment includes a display panel 1000 and a color conversion panel 2000 that are generally overlapped with each other.

[0042] The display panel 1000 (hereinafter also referred to as the lower panel) may include a plurality of pixels PX1, PX2, PX3, and a light-emitting element ED may be located in each of the pixels PX1, PX2, PX3. That is, the display panel 1000 may include a plurality of light-emitting elements ED. The plurality of pixels PX1, PX2, PX3 may include a first pixel PX1, a second pixel PX2, and a third pixel PX3. Each light-emitting element ED may emit light, and the display panel 1000 may display an image by adjusting the intensity of light emitted from the light-emitting element ED of each pixel PX1, PX2, PX3 to express brightness. Here, the light-emitting elements ED included in each of the plurality of pixels PX1, PX2, PX3 all emit the same color of light, and the color may be converted into three primary colors by a color conversion panel 2000 described later, to display colors.

[0043] The light emitting element ED may be an organic light emitting element, and the display panel 1000 may be an organic light emitting display panel. However, the type of the display panel 1000 is not limited thereto, and may be made of various types of panels. For example, the display panel 1000 may be made of a liquid crystal display panel, an electrophoretic display panel, an electrowetting display panel, etc. Also, the display panel 1000 may be made of a next-generation display panel such as a micro light emitting diode (Micro LED) display panel.

[0044] The display panel 1000 may be a flat rigid display panel, or may be a flexible display panel that can be flexibly bent.

[0045] The color conversion panel 2000 may be disposed so as to face and overlap the display panel 1000. The color conversion panel 2000 may include a first color conversion layer 520a, a second color conversion layer 520b, and a transmissive layer 520c. The first color conversion layer 520a may overlap the light emitting element ED located in the first pixel PX1 on a plane. Light emitted from the light emitting element ED of the first pixel PX1 may pass through the first color conversion layer 520a to emit light of a first wavelength. The second color conversion layer 520b may overlap the light emitting element ED located in the second pixel PX2 on a plane. Light emitted from the light emitting element ED of the second pixel PX2 may pass through the second color conversion layer 520b to emit light of a second wavelength. The transmissive layer 520c may overlap the light emitting element ED located in the third pixel PX3 on a plane. Light emitted from the light emitting element ED of the third pixel PX3 may pass through the transmissive layer 520c to emit light of a third wavelength as it is. For example, the light of the first wavelength may be red light, the light of the second wavelength may be green light, and the light of the third wavelength may be blue light. That is, the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be a red pixel, a green pixel, and a blue pixel, respectively. However, the present invention is not limited thereto, and the colors displayed by the first pixel PX1, the second pixel PX2, and the third pixel PX3 may be variously changed. In addition to the first pixel PX1, the second pixel PX2, and the third pixel PX3, pixels displaying different colors may also be included.

[0046] Hereinafter, with reference to FIG. 2 and FIG. 3, a layered structure of a color conversion panel 2000 (hereinafter, also referred to as an upper panel) of a light emitting display device according to an embodiment will be specifically described.

[0047] The color conversion panel 2000 may include a substrate 210 (also referred to as an upper substrate), and a first color filter 230a, a second color filter 230b, and a third color filter 230c located on one side of the substrate 210.

[0048] The first color filter 230a can transmit light of the first wavelength and absorb light of the remaining wavelengths, thereby increasing the purity of the light of the first wavelength emitted to the outside of the light emitting display device.

[0049] The second color filter 230b can transmit light of the second wavelength and absorb light of the remaining wavelengths, thereby increasing the purity of the light of the second wavelength emitted to the outside of the light emitting display device.

[0050] The third color filter 230c can transmit light of the third wavelength and absorb light of the remaining wavelengths, thereby increasing the purity of the light of the third wavelength emitted to the outside of the light emitting display device.

[0051] The first color filter 230a, the second color filter 230b, and the third color filter 230c may be positioned to overlap with different pixels PX1, PX2, and PX3, respectively. At the boundary between the pixels PX1, PX2, and PX3, the first color filter 230a, the second color filter 230b, and the third color filter 230c may overlap with each other to form a light-shielding region. Although the first color filter 230a, the second color filter 230b, and the third color filter 230c are shown to overlap with each other in the light-shielding region, this is not limiting. For example, two color filters among the first color filter 230a, the second color filter 230b, and the third color filter 230c may overlap to form a light-shielding region. For example, the first color filter 230a and the second color filter 230b may overlap with each other at the boundary between the first pixel PX1 and the second pixel PX2. At the boundary between the second pixel PX2 and the third pixel PX3, the second color filter 230b and the third color filter 230c may overlap. At the boundary between the third pixel PX3 and the first pixel PX1, the third color filter 230c and the first color filter 230a may overlap.

[0052] A low refractive index layer 240 may be located on the first color filter 230a, the second color filter 230b, and the third color filter 230c. The low refractive index layer 240 may overlap the entire first color filter 230a, the second color filter 230b, and the third color filter 230c. That is, the low refractive index layer 240 may be located over the entire substrate 210. The low refractive index layer 240 may include an organic or inorganic material having a low refractive index. For example, the refractive index of the low refractive index layer 240 may be about 1.1 or more and about 1.3 or less.

[0053] A first capping layer 250 (hereinafter, also referred to as a lower capping layer) may be positioned on the low refractive index layer 240. The first capping layer 250 is a layer for protecting the low refractive index layer 240, and may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy), etc. The first capping layer 250 may have a single layer or a multi-layer structure of the material.

[0054] A partition 265 (hereinafter, also referred to as a bank layer) may be positioned on the first capping layer 250. The partition 265 may include a first opening 267a overlapping the first color filter 230a in a plane, a second opening 267b overlapping the second color filter 230b in a plane, and a third opening 267c overlapping the third color filter 230c in a plane. The first opening 267a may overlap the light-emitting region of the first pixel PX1 in a plane, the second opening 267b may overlap the light-emitting region of the second pixel PX2 in a plane, and the third opening 267c may overlap the light-emitting region of the third pixel PX3 in a plane. The partition 265 may overlap the light-shielding region where the first color filter 230a, the second color filter 230b, and the third color filter 230c overlap each other in a plane. Therefore, the partition 265 may overlap the boundary between each pixel PX1, PX2, and PX3. Meanwhile, the partition 265 may further include a dummy opening (see 267-v in FIG. 8) overlapping on a plane with a light-shielding region where the first color filter 230a, the second color filter 230b and the third color filter 230c overlap each other.

[0055] A first color conversion layer 520a may be positioned in the first opening 267a, a second color conversion layer 520b may be positioned in the second opening 267b, and a transmissive layer 520c may be positioned in the third opening 267c. Meanwhile, the color conversion layer does not have to be positioned in the dummy openings, but when the color conversion layer is formed, the material of the color conversion layer may flow and be positioned in some of the dummy openings.

[0056] The first color conversion layer 520a may overlap the first color filter 230a on a plane. The first color conversion layer 520a may not overlap the second color filter 230b and the third color filter 230c on a plane. The first color conversion layer 520a may convert light incident from the light emitting element ED of the first pixel PX1 into light of a first wavelength. At this time, the light of the first wavelength may be red light having a maximum emission peak wavelength of about 600 nm to about 650 nm, for example, about 620 nm to about 650 nm. According to an embodiment, the first color conversion layer 520a may include a plurality of first quantum dots 521a and a plurality of scatterers 530.

[0057] The second color conversion layer 520b may overlap the second color filter 230b on a plane. The second color conversion layer 520b may not overlap the first color filter 230a and the third color filter 230c on a plane. The second color conversion layer 520b may convert light incident from the light emitting element ED of the second pixel PX2 into light of the second wavelength. At this time, the light of the second wavelength may be green light having a maximum emission peak wavelength of about 500 nm to about 550 nm, for example, about 510 nm to about 550 nm. According to an embodiment, the second color conversion layer 520b may include a plurality of second quantum dots 521b and a plurality of scatterers 530.

[0058] The transmissive layer 520c may overlap the third color filter 230c on a plane. The transmissive layer 520c may not overlap the first color filter 230a and the second color filter 230b on a plane. The transmissive layer 520c may transmit light incident from the light-emitting element ED of the third pixel PX3. The light passing through the transmissive layer 520c may be light of a third wavelength. The light of the third wavelength may be blue light having a maximum emission peak wavelength of about 380 nm to about 480 nm, for example, about 420 nm or more, about 430 nm or more, about 440 nm or more, or about 445 nm or more, and about 470 nm or less, about 460 nm or less, or about 455 nm or less. According to an embodiment, the transmissive layer 520c may include a plurality of scatterers 530, but may not include quantum dots.

[0059] The plurality of scatterers 530 scatter the light incident on the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c to improve the light efficiency. 2 , SiO 2 , BaSO 4 , ZnO, Al 2 O 3 and CaCO 3 etc. The particle size of the scatterers 530 may be about 50 nm or more and about 800 nm or less.

[0060] Each of the first quantum dots 521a and the second quantum dots 521b (hereinafter also referred to as semiconductor nanocrystals) can independently comprise a II-VI compound, a III-V compound, a IV-VI compound, a group IV element or compound, a I-III-VI compound, a II-III-VI compound, a I-II-IV-VI compound, or a combination thereof. The quantum dots may be free of cadmium.

[0061] The II-VI compound is a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, Ternary compounds selected from the group consisting of CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. The II-VI compound may further comprise a Group III metal.

[0062] The III-V compound may be selected from the group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InZnP, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, and mixtures thereof. The III-V compound may also include a Group II metal (e.g., InZnP).

[0063] The IV-VI compound may be selected from the group consisting of binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof.

[0064] The Group IV element or compound may be selected from the group consisting of, but is not limited to, mono-element compounds selected from the group consisting of Si, Ge, and combinations thereof; and bi-element compounds selected from the group consisting of SiC, SiGe, and combinations thereof.

[0065] An example of the I-III-VI compound is CuInSe 2 , CuInS 2 Examples of the group I-II-IV-VI compounds include, but are not limited to, CuZnSnSe, and CuZnSnS. The group IV element or compound may be selected from the group consisting of monoelements selected from the group consisting of Si, Ge, and mixtures thereof; and binary compounds selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0066] The II-III-VI compound may be selected from the group consisting of, but is not limited to, ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe, and combinations thereof.

[0067] The group I-II-IV-VI compound may be selected from, but is not limited to, CuZnSnSe and CuZnSnS.

[0068] In one embodiment, the quantum dots may be free of cadmium. The quantum dots may include semiconductor nanocrystals based on III-V compounds including indium and phosphorus. The III-V compounds may further include zinc. The quantum dots may include semiconductor nanocrystals based on II-VI compounds including chalcogen elements (e.g., sulfur, selenium, tellurium, or combinations thereof) and zinc.

[0069] In quantum dots, the two-element compound, three-element compound, and / or four-element compound may be present in a particle with a uniform concentration or may be present in the same particle with partially different concentration distributions. A quantum dot may also have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0070] According to an embodiment, the quantum dot may have a core-shell structure including a core containing the nanocrystal and a shell surrounding the core. The shell of the quantum dot may act as a protective layer for preventing chemical denaturation of the core to maintain the semiconductor properties and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers (stacked film). The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases toward the center. Examples of the shell of the quantum dot include metal or nonmetal oxides, semiconductor compounds, or combinations thereof.

[0071] For example, the metal or nonmetal oxide is SiO 2 , Al 2 O 3 , TiO 2, ZnO, MnO, Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 , binary compounds such as NiO, or MgAl 2 O 4 , CoFe 2 O 4 , NiFe 2 O 4 , CoMn 2 O 4 However, the present invention is not limited thereto.

[0072] Examples of the semiconductor compound include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb, but the present invention is not limited thereto.

[0073] According to an embodiment, the interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center. The semiconductor nanocrystal may also have a structure including a single semiconductor nanocrystal core surrounded by multiple shells. In one embodiment, the multi-layer shell may have two or more layers, for example, two, three, four, five or more layers. Two adjacent layers in the shell may have the same composition or different compositions. Each layer in the multi-layer shell may have a composition that varies along the radius.

[0074] The quantum dots may have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and within this range, color purity and color reproducibility can be improved. In addition, light emitted through such quantum dots is emitted in all directions, and the light viewing angle can be improved.

[0075] The quantum dot may have a shell material and a core material having different energy band gaps. For example, the energy band gap of the shell material may be larger than that of the core material. In other embodiments, the energy band gap of the shell material may be smaller than that of the core material. The quantum dot may have a multi-layer shell. In a multi-layer shell, the energy band gap of an outer layer may be larger than that of an inner layer (i.e., a layer closer to the core). In a multi-layer shell, the energy band gap of an outer layer may be smaller than that of an inner layer.

[0076] The quantum dots can adjust the absorption / emission wavelength by adjusting the composition and size. The maximum emission peak wavelength of the quantum dots can range from ultraviolet to infrared wavelengths or even longer.

[0077] The quantum dots can include organic ligands (e.g., having hydrophobic and / or hydrophilic residues). The organic ligand residues can be attached to the surface of the quantum dots. The organic ligands can be RCOOH, RNH 2 , R 2 N.H., R. 3 N, R.S.H., R. 3 P.O., R. 3 P, ROH, RCOOR, RPO(OH) 2 , R.H.P.O.H., R. 2POOH, or combinations thereof, where each R can be independently a C3 to C40 (e.g., C or more and C24 or less) substituted or unsubstituted alkyl, a C3 to C40 substituted or unsubstituted aliphatic hydrocarbon group such as a substituted or unsubstituted alkenyl, a C6 to C40 (e.g., C6 or more and C20 or less) substituted or unsubstituted aromatic hydrocarbon group such as a substituted or unsubstituted C6 to C40 aryl group, or a combination thereof.

[0078] Examples of the organic ligand include thiol compounds such as methanethiol, ethanethiol, propanethiol, butanethiol, pentanethiol, hexanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol, and benzylthiol; amines such as methaneamine, ethaneamine, propaneamine, butaneamine, pentylamine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine, tributylamine, and trioctylamine; and amines such as methanoic acid, ethanoic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecane acid, octadecanoic acid, and oleic acid. acid), carboxylic acid compounds such as benzoic acid; phosphine compounds such as methylphosphine, ethylphosphine, propylphosphine, butylphosphine, pentylphosphine, octylphosphine, dioctylphosphine, tributylphosphine, trioctylphosphine; phosphine compounds or oxide compounds such as methylphosphine oxide, ethylphosphine oxide, propylphosphine oxide, butylphosphine oxide, pentylphosphine oxide, tributylphosphine oxide, octylphosphine oxide, dioctylphosphine oxide, trioctylphosphine oxide; diphenylphosphine, triphenylphosphine compounds or oxide compounds; alkylphosphinic acids having C5 to C20, such as hexylphosphinic acid, octylphosphinic acid, dodecanephosphinic acid, tetradecanephosphinic acid, hexadecanephosphinic acid, and octadecanephosphinic acid, and alkylphosphonic acids having C5 to C20; and the like, but are not limited thereto. The quantum dots may contain hydrophobic organic ligands alone or as a mixture of one or more types. The hydrophobic organic ligands may be free of photopolymerizable moieties (eg, acrylate groups, methacrylate groups, etc.).

[0079] Each of the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c may further include a monomer. In this case, the monomer may be a non-volatile monomer and may be an organic material for photocuring. The monomer may have an acrylate functional group at one end or both ends. The monomer may have a boiling point of about 200° C. or more and a vapor pressure of about 10 -2 It may have the property of being less than or equal to mmHg.

[0080] Each of the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c may contain two or more different monomers. That is, each of the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c may contain a first monomer and a second monomer. At this time, the first monomer and the second monomer may contain different substances. In this case, the first monomer and the second monomer may have an acrylate functional group at one end or both ends.

[0081] Spacers CS are positioned on the barrier ribs 265. The spacers CS serve to maintain a distance between the display panel 1000 and the color conversion panel 2000 when the two panels are combined. In this embodiment, the spacers CS are formed by an inkjet method without forming a pattern using a mask.

[0082] When the spacer CS is formed by the inkjet method, the position where the spacer CS is formed may not be uniform compared to the case where the spacer CS is patterned using a mask, but since a mask is not used, there is an advantage that the manufacturing cost and the process time are reduced. Therefore, in this embodiment, in order to easily form the spacer CS by the inkjet method, a spacer forming portion (see the CSL portion in FIG. 6), which is a part of the partition wall 265, is formed long in one direction at the position where the spacer CS is to be formed in the partition wall 265, and the spacer CS is formed by the inkjet method at the portion overlapping the spacer forming portion on a plane. This will be described in more detail in FIG. 6.

[0083] A second capping layer 280 (hereinafter also referred to as an upper capping layer) may be positioned on the first color conversion layer 520a, the second color conversion layer 520b, the transmissive layer 520c, the barrier ribs 265, and the spacers CS. The second capping layer 280 is positioned over the entire substrate 210 and may have a structure covering the first color conversion layer 520a, the second color conversion layer 520b, the transmissive layer 520c, the barrier ribs 265, and the spacers CS. The second capping layer 280 is a layer that covers and protects the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c, and may be made of an inorganic material. For example, the second capping layer 280 may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiOxNy). The second capping layer 280 may have a single layer or multilayer structure of the material. In the embodiment of FIG. 2, the second capping layer 280 is formed after the first color conversion layer 520a, the second color conversion layer 520b, the transmissive layer 520c, and the spacer CS are formed. In this embodiment, the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c are formed between the partition walls 265 by the inkjet method, and then the spacer CS is also formed on the partition wall 265 by the inkjet method, and then the second capping layer 280 is laminated. As a result, since the inkjet process can be applied continuously, there is an advantage that the overall process time is shortened.

[0084] A filling layer 290 may be positioned on the second capping layer 280. The filling layer 290 may be positioned over the entire substrate 210. The filling layer 290 is positioned between the display panel 1000 and the color conversion panel 2000 when the display panel 1000 and the color conversion panel 2000 are bonded together.

[0085] Hereinafter, a state in which the display panel 1000 and the color conversion panel 2000 are attached to each other will be described with reference to Fig. 3. In Fig. 3, the color conversion panel 2000 shown in Fig. 2 can be attached to the display panel 1000 in a state in which the color conversion panel 2000 is inverted upside down.

[0086] The display panel 1000 may include a substrate 110, a semiconductor 131 located on the substrate 110, a transistor TFT including a gate electrode 124, a source electrode 173 and a drain electrode 175, a gate insulating film 120, a first interlayer insulating film 160, an organic film 180, a pixel electrode 191, a light emitting layer 370, a pixel defining film 350, a common electrode 270 and an encapsulation layer 400. In some embodiments, the source electrode 173 and the drain electrode 175 of the transistor TFT may not be included.

[0087] The substrate 110 may include a material having rigid properties such as glass, or a flexible material that can bend such as plastic, polyimide, etc. A buffer layer 111 may be further disposed on the substrate 110 to planarize the surface of the substrate 110 and block impurities from entering the semiconductor 131. The buffer layer 111 may include an inorganic material, for example, an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy). The buffer layer 111 may have a single layer or multilayer structure of the material. A barrier layer (not shown) may be further disposed on the substrate 110. In this case, the barrier layer may be disposed between the substrate 110 and the buffer layer 111. The barrier layer may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy). The barrier layer may have a single layer or multilayer structure of the material.

[0088] The semiconductor 131 may be located on the substrate 110. The semiconductor 131 may include any one of amorphous silicon, polycrystalline silicon, and an oxide semiconductor. For example, the semiconductor 131 may include low temperature polysilicon (LTPS) or an oxide semiconductor material including at least one of zinc (Zn), indium (In), gallium (Ga), tin (Sn), and mixtures thereof. For example, the semiconductor 131 may include indium-gallium-zinc oxide (IGZO). The semiconductor 131 may include a channel region, a source region, and a drain region, which are differentiated by the presence or absence of impurity doping. The source region and the drain region may have conductive properties corresponding to a conductor.

[0089] The gate insulating film 120 may cover the semiconductor 131 and the substrate 110. The gate insulating film 120 may include inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy), etc. The gate insulating film 120 may be a single layer or a multi-layer structure of the materials.

[0090] The gate electrode 124 may be located on the gate insulating film 120. The gate electrode 124 may include a metal or a metal alloy, such as copper (Cu), molybdenum (Mo), aluminum (Al), silver (Ag), chromium (Cr), tantalum (Ta), or titanium (Ti). The gate electrode 124 may be configured as a single layer or multiple layers. A region of the semiconductor 131 that overlaps with the gate electrode 124 on a plane may be a channel region.

[0091] The first interlayer insulating film 160 may cover the gate electrode 124 and the gate insulating film 120. The first interlayer insulating film 160 may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy), etc. The first interlayer insulating film 160 may have a single layer or multi-layer structure of the material.

[0092] The source electrode 173 and the drain electrode 175 may be located on the first interlayer insulating film 160. The source electrode 173 and the drain electrode 175 are respectively connected to the source region and the drain region of the semiconductor 131 through openings formed in the first interlayer insulating film 160 and the gate insulating film 120. The semiconductor 131, the gate electrode 124, the source electrode 173 and the drain electrode 175 constitute one transistor TFT. In some embodiments, the transistor TFT may include only the source region and the drain region of the semiconductor 131 instead of the source electrode 173 and the drain electrode 175. Although one transistor TFT is shown in each pixel PX1, PX2, PX3, the present invention is not limited thereto, and multiple transistor TFTs may be located in each pixel PX1, PX2, PX3.

[0093] The source electrode 173 and the drain electrode 175 may include metals or metal alloys such as aluminum (Al), copper (Cu), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), nickel (Ni), molybdenum (Mo), tungsten (W), titanium (Ti), chromium (Cr), tantalum (Ta), or may include various transparent conductive oxide films such as indium tin oxide (ITO). The source electrode 173 and the drain electrode 175 may be configured as a single layer or multiple layers. According to an embodiment, the source electrode 173 and the drain electrode 175 may be configured as a triple layer including an upper layer, a middle layer, and a lower layer, where the lower layer may include titanium (Ti), the middle layer may include copper (Cu), and the upper layer may include indium tin oxide (ITO), which is a transparent conductive oxide film.

[0094] The organic film 180 may be located on the source electrode 173 and the drain electrode 175. The organic film 180 covers the source electrode 173, the drain electrode 175, and the first interlayer insulating film 160. The organic film 180 is for planarizing the surface of the substrate 110 on which the transistor TFT is provided, and may be an organic insulating film, and may include one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenol resin.

[0095] The pixel electrode 191 may be located on the organic film 180. The pixel electrode 191 is also called an anode electrode and may be composed of a single layer including a transparent conductive oxide film or a metal material, or a multi-layer including these. The transparent conductive oxide film may include ITO (Indium Tin Oxide), poly-ITO, IZO (Indium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), etc. The metal material may include silver (Ag), molybdenum (Mo), copper (Cu), gold (Au), aluminum (Al), etc.

[0096] The organic film 180 may include a via hole 81 exposing the drain electrode 175. The drain electrode 175 and the pixel electrode 191 may be physically and electrically connected to each other through the via hole 81 of the organic film 180. Thus, the pixel electrode 191 may receive an output current transmitted from the drain electrode 175 to the light emitting layer 370.

[0097] A pixel defining film 350 may be positioned on the pixel electrode 191 and the organic film 180. The pixel defining film 350 includes a pixel opening 351 (hereinafter, also referred to as an opening for a light emitting diode) overlapping at least a portion of the pixel electrode 191. In this case, the pixel opening 351 may overlap a center portion of the pixel electrode 191, but may not overlap an edge portion of the pixel electrode 191. Therefore, the size of the pixel opening 351 may be smaller than the size of the pixel electrode 191. The pixel defining film 350 may define a formation position of the light emitting layer 370 so that the light emitting layer 370 can be positioned on the exposed portion of the upper surface of the pixel electrode 191. The pixel defining film 350 may be an organic insulating film including one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenol resin. According to an embodiment, the pixel defining film 350 may be formed of a black pixel defining layer (BPDL) including a black pigment.

[0098] The pixel defining film 350 can be located at the boundary between the pixels PX1, PX2, and PX3. The pixel defining film 350 can overlap the partition wall 265 of the color conversion panel 2000 in a plane, and the pixel opening 351 of the pixel defining film 350 can also overlap the first opening 267a, the second opening 267b, and the third opening 267c of the partition wall 265 in a plane. The pixel opening 351 of the pixel defining film 350 can also overlap the first color filter 230a, the second color filter 230b, and the third color filter 230c in a plane, and can also overlap the first color conversion layer 520a, the second color conversion layer 520b, and the transmission layer 520c in a plane. The pixel defining film 350 can also overlap the light-shielding region where the first color filter 230a, the second color filter 230b, and the third color filter 230c overlap.

[0099] Each of the pixel openings 351 may have a shape similar to that of the pixel electrode 191 on a plane. For example, the pixel openings 351 and the pixel electrode 191 may be polygonal on a plane. In this case, the corners of the pixel openings 351 and the pixel electrode 191 may be chamfered. However, the shapes of the pixel openings 351 and the pixel electrode 191 are not limited to this and may be variously changed.

[0100] Here, the pixel electrodes 191 corresponding to the first pixel PX1, the second pixel PX2, and the third pixel PX3 may have different sizes on a plane. Similarly, the pixel openings 351 corresponding to the first pixel PX1, the second pixel PX2, and the third pixel PX3 may have different sizes on a plane. For example, the pixel opening 351 and the pixel electrode 191 corresponding to the first pixel PX1 may have a larger size than the pixel opening 351 and the pixel electrode 191 corresponding to the second pixel PX2 on a plane. Also, the pixel opening 351 and the pixel electrode 191 corresponding to the first pixel PX1 may have a smaller size than or a similar size to the pixel opening 351 and the pixel electrode 191 corresponding to the third pixel PX3 on a plane. However, this is not limited thereto, and each pixel opening 351 and pixel electrode 191 may be set to have various sizes.

[0101] The light-emitting layer 370 may be located in a pixel opening 351 defined by the pixel defining film 350. However, the present invention is not limited thereto, and the light-emitting layer 370 may be located not only in the pixel opening 351 but also on the pixel defining film 350. The light-emitting layer 370 may be formed by performing a deposition process using an open mask having an opening corresponding to a display region. The light-emitting layer 370 may include a low molecular weight or high molecular weight organic material. Although the light-emitting layer 370 is shown as a single layer, in practice, auxiliary layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer may be included above and below the light-emitting layer 370. A hole injection layer and a hole transport layer may be located below the light-emitting layer 370, and an electron transport layer and an electron injection layer may be located above the light-emitting layer 370. According to an embodiment, the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer may be located on the upper part of the pixel defining film 350, or may be located over the entire area of ​​the substrate 110. Furthermore, another light emitting layer may be further positioned on the light emitting layer 370. That is, two or more light emitting layers 370 may be stacked.

[0102] Although not shown, a lower spacer may be further positioned on the pixel defining film 350. The lower spacer may include the same material as the pixel defining film 350. However, the present invention is not limited thereto, and the lower spacer may be formed of a material different from that of the pixel defining film 350. The lower spacer may be an organic insulating film including one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenol resin.

[0103] The common electrode 270 may be located on the pixel defining film 350 and the light emitting layer 370. The common electrodes 270 of the pixels PX1, PX2, and PX3 may be connected to each other. The common electrode 270 may be formed on the substrate 110 so as to be connected to the entire substrate. The common electrode 270 may be called a cathode electrode and may be formed of a transparent conductive layer including ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), etc. The common electrode 270 may be formed of a metal material such as silver (Ag), magnesium (Mg), etc., or may be formed of a mixture of these materials. In this case, the common electrode 270 may be formed as a transparent conductive layer by adjusting the thickness of the common electrode 270. In addition, the common electrode 270 may have a semi-transparent property, and in this case, the common electrode 270 may form a microcavity together with the pixel electrode 191.

[0104] The pixel electrode 191, the light-emitting layer 370, and the common electrode 270 can constitute a light-emitting element ED. In each of the pixels PX1, PX2, and PX3, the overlapping portion of the pixel electrode 191, the light-emitting layer 370, and the common electrode 270 can be the light-emitting region of each light-emitting element ED.

[0105] The light-emitting element ED located in the first pixel PX1 may overlap the first color conversion layer 520a and the first color filter 230a on a plane. The light-emitting element ED located in the first pixel PX1 may not overlap the second color conversion layer 520b, the transmissive layer 520c, the second color filter 230b, and the third color filter 230c on a plane. The light emitted from the light-emitting element ED of the first pixel PX1 may be converted into light of a first wavelength as it passes through the first color conversion layer 520a, and may be emitted to the outside through the first color filter 230a.

[0106] The light-emitting element ED located in the second pixel PX2 may overlap the second color conversion layer 520b and the second color filter 230b on a plane. The light-emitting element ED located in the second pixel PX2 may not overlap the first color conversion layer 520a, the transmissive layer 520c, the first color filter 230a, and the third color filter 230c on a plane. The light emitted from the light-emitting element ED of the second pixel PX2 may be converted into light of a second wavelength as it passes through the second color conversion layer 520b, and may be emitted to the outside through the second color filter 230b.

[0107] The light emitting element ED located in the third pixel PX3 may overlap with the transmissive layer 520c and the third color filter 230c on a plane. The light emitting element ED located in the third pixel PX3 may not overlap with the first color conversion layer 520a, the second color conversion layer 520b, the first color filter 230a, and the second color filter 230b on a plane. The third wavelength light emitted from the light emitting element ED of the third pixel PX3 may sequentially pass through the transmissive layer 520c and the third color filter 230c and be emitted to the outside.

[0108] The encapsulation layer 400 may be located on the common electrode 270. The encapsulation layer 400 may include at least one inorganic film and at least one organic film. In the present embodiment, the encapsulation layer 400 may include a first inorganic encapsulation layer 410, an organic encapsulation layer 420, and a second inorganic encapsulation layer 430. However, this is merely an example, and the number of inorganic films and organic films constituting the encapsulation layer 400 may be variously changed. For example, the encapsulation layer 400 may be stacked in the order of a first inorganic encapsulation layer, a second inorganic encapsulation layer, a first organic encapsulation layer, and a third inorganic encapsulation layer. Alternatively, the encapsulation layer 400 may be stacked in the order of a first inorganic encapsulation layer, a first organic encapsulation layer, a second inorganic encapsulation layer, and a third inorganic encapsulation layer. The display panel 1000 may include a display area that displays a screen and a peripheral area surrounding the display area. The first inorganic encapsulation layer 410, the organic encapsulation layer 420, and the second inorganic encapsulation layer 430 may be located in a part of the display area and the peripheral area. In some embodiments, the organic encapsulation layer 420 may be formed around the display region, and the first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 may be formed up to the peripheral region. The encapsulation layer 400 serves to protect the light emitting element ED from moisture or oxygen entering from the outside, and one end of the first inorganic encapsulation layer 410 and the second inorganic encapsulation layer 430 may be formed to be in direct contact with each other.

[0109] The encapsulating layer 400 may be in contact with the color conversion panel 2000, specifically, the encapsulating layer 400 may be in contact with the filling layer 290. Therefore, the second inorganic encapsulating layer 430 in the encapsulating layer 400 may be in contact with the filling layer 290. However, this is merely an example, and other layers may be further positioned between the encapsulating layer 400 and the filling layer 290.

[0110] Although not shown in the drawings, the light emitting display device according to an embodiment may further include a sensing unit for sensing a touch. The sensing unit may include a plurality of sensing electrodes, and may be located between the display panel 1000 and the color conversion panel 2000.

[0111] Hereinafter, the method of forming the spacers CS on the color conversion panel 2000 and the shape of the head in the inkjet equipment will be described with reference to FIGS.

[0112] FIG. 4 is a diagram illustrating a step of forming spacers on a color conversion panel of a light emitting display device by an inkjet method according to an embodiment, and FIG. 5 is a diagram illustrating a head of an inkjet apparatus according to an embodiment.

[0113] 4 shows color conversion panel 2000 at a stage where first color conversion layer 520a, second color conversion layer 520b, and transmissive layer 520c are formed in first opening 267a, second opening 267b, and third opening 267c, respectively, after partition wall 265 including first opening 267a, second opening 267b, and third opening 267c is formed on substrate 210. Thereafter, a stage where spacers CS are formed by the inkjet method is shown in FIG.

[0114] As shown in Fig. 4, the head HEAD of the inkjet equipment discharges ink while moving in the direction of the arrow (hereinafter, also referred to as the moving direction) to form spacers CS. Referring to Fig. 5, the head HEAD of the inkjet equipment has a structure that extends long in a direction perpendicular to the moving direction (hereinafter, also referred to as the head extension direction).

[0115] 5 shows the structure of the head HEAD of the inkjet equipment as seen from the substrate side, with a plurality of nozzles NZ arranged therein. Referring to FIG. 5, adjacent nozzles NZ may be arranged to have a gap gap-nz between the nozzles NZ in the head extension direction. The gap gap-nz between the nozzles NZ may be varied, and the minimum gap gap-nz between the nozzles NZ may be a value taken into consideration when determining the length of the spacer forming portion (see the CSL portion in FIG. 6) of the partition 265 formed at the position where the spacer CS is formed, which is formed long in one direction. This will be seen in detail in FIG. 6.

[0116] Meanwhile, according to an embodiment, the head HEAD of the inkjet equipment may reduce the minimum gap between nozzles (gap-nz) by arranging a plurality of head HEADs at regular intervals. Here, the minimum gap between nozzles (gap-nz) reduced by using a plurality of head HEADs may be a value taken into consideration when determining the length of the spacer forming portion of the partition 265 formed long in one direction (hereinafter also referred to as the first direction).

[0117] Here, the movement direction of the head HEAD has a direction perpendicular to (is perpendicular to) the extension direction of the head HEAD and the direction determining the gap-nz between the nozzles, and the extension direction of the head HEAD and the direction determining the gap-nz between the nozzles may be the same direction.

[0118] The planar structure of the spacer formation portion and the position of the spacer CS according to one embodiment will be described in more detail below with reference to FIGS.

[0119] FIG. 6 is a plan view showing a spacer and partitions around the spacer according to an embodiment, and FIG. 7 is a diagram showing the position of the spacer on a plane according to the embodiment.

[0120] 6 shows a spacer forming portion CSL, which is a part of the partition 265, and a spacer CS overlapping it in a plan view. Here, a structure is provided in which a partition 265 is further formed with a minimum width b around the spacer forming portion CSL. The portion in which the partition 265 is further formed with the minimum width b is also referred to as an additional margin portion hereinafter. The shape of the partition 265 shown in FIG. 6 shows only the minimum width b at the spacer forming portion CSL, so the partition 265 may be formed with a width wider than this. The planar structure of the partition 265 according to a specific embodiment will be described in detail with reference to FIG. 8, FIG. 16, and FIG. 17.

[0121] 7, the spacer CS is shown by dotted lines to be formed at different positions along the extension direction of the spacer forming portion CSL (hereinafter also referred to as the extension direction of the spacer forming portion). Here, the extension direction of the spacer forming portion may be the same direction as the extension direction of the head HEAD of the inkjet equipment, and may correspond to the direction of the arrow indicated by c in Fig. 6. Fig. 7 takes into consideration that the position at which the spacer CS is formed may be different depending on the position of the nozzle NZ to be used among the multiple nozzles NZ formed in the head HEAD of the inkjet equipment.

[0122] 6, the spacer CS may have a circular shape and a diameter a of about 20 μm, and the diameter a of the spacer CS may be 10 μm or more and 30 μm or less. According to an embodiment, the spacer CS may have a polygonal shape similar to a circle. Here, the spacer CS may be formed with a height of 2 μm or more and 10 μm or less.

[0123] The spacer forming portion CSL is formed to a size including the diameter a of the spacer CS, and is formed to be larger as the diameter a of the spacer CS to be formed increases.

[0124] Of the spacer forming portion CSL, both ends in the extension direction of the spacer forming portion can be formed in the same planar shape as the planar shape of the spacer CS, and in Figure 5, the planar shapes of both ends of the spacer forming portion CSL are each formed in a semicircular structure in accordance with the planar shape of the circular spacer CS.

[0125] Also, the spacer forming portion CSL is formed long in a direction in which the spacer CS can move and be positioned, that is, in the extension direction of the spacer forming portion. The length of the extension direction of the spacer forming portion CSL is formed to have a margin c even after the spacer CS is formed. Here, the margin c can be determined based on the minimum value of the gap-nz between the nozzles in FIG. 5. In this embodiment, the margin c is set to the minimum gap-nz between the nozzles. The minimum gap-nz between the nozzles can be diversified according to the inkjet equipment, and the value of the margin c can be 14.1 μm or more and 70.5 μm or less. Here, considering the margin c and the diameter a of the spacer CS, the length of the extension direction of the spacer forming portion CSL can be 24.1 μm or more and 90.5 μm or less.

[0126] However, when actually forming the spacers CS by the inkjet method, taking into consideration the precision and error, the partition 265 according to the present embodiment is formed with an additional margin portion having a minimum width b around the spacer forming portion CSL, so that the spacers CS can have a structure in which they always overlap the partition 265 on a plane. Here, the minimum width b may have a value of about 10 μm, and the minimum width b value may be 5 μm or more and 15 μm or less.

[0127] According to the above-described structure, by forming the partition 265 with the spacer formation portion CSL and the minimum width b around it, the spacer CS can be formed so as to be stably positioned on the partition 265 even when formed by inkjet.

[0128] In particular, in the partition 265 of this embodiment, the spacer forming portion CSL has a structure in which it extends in one direction (the extension direction of the spacer forming portion), and thus has an anisotropic planar structure in which the extension direction and the direction perpendicular thereto have different widths. As a result, the spacer CS is formed on the partition 265 regardless of which nozzle NZ is formed from among the multiple nozzles NZ in the head HEAD of the inkjet equipment.

[0129] As a result, since no mask is used, there are advantages in that the manufacturing cost and process time are reduced.

[0130] Meanwhile, a specific structure of the barrier rib 265 has a width equal to or greater than the minimum width b in various directions at the spacer forming portion CSL, and a specific structure of the barrier rib 265 will be described in detail with reference to FIG.

[0131] FIG. 8 is a plan view of a color conversion panel of a light emitting display device according to an embodiment.

[0132] 8 shows the partition wall 265, the spacer CS, the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c. The partition wall 265 not only includes the first opening 267a, the second opening 267b, and the third opening 267c in which the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c are located, but also includes a dummy opening 267-v. The dummy opening 267-v does not overlap the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c in a plane, but overlaps the light-shielding region in a plane. The openings adjacent to the periphery of the partition wall 265 where the spacer CS is located may all be dummy openings 267-v, and the spacer CS may be located adjacent to the dummy opening 267-v of the partition wall 265 in a plane.

[0133] On the other hand, FIG. 8 shows pitches Pitch-x and Pitch-y between four adjacent spacers CS.

[0134] Since the spacer CS can be positioned while varying its position along the extension direction of the spacer forming portion CSL, the vertical pitch Pitch-y in FIG. 8 can have a value different from the horizontal pitch Pitch-x. In FIG. 8, the second vertical pitch Pitch-y2 is additionally shown as the vertical pitch Pitch-y, to show that adjacent vertical pitches can be different from each other. In FIG. 8, the uppermost spacer CS is shown to be located at the upper side of the spacer forming portion CSL, the intermediate spacer CS is located at the lower side of the spacer forming portion CSL, and the lowermost spacer CS is located at the intermediate portion of the spacer forming portion CSL. However, the spacer CS can be formed at various positions in the spacer forming portion CSL.

[0135] More specifically, the pitch between the spacers CS may be as follows. The horizontal pitches Pitch-x may all have a constant value, and may have a value equal to an integer multiple of the pitch of the pixels in the horizontal direction. Meanwhile, the vertical pitches Pitch-y may have various values ​​as the positions of the spacers CS change along the extension direction, and adjacent vertical pitches Pitch-y may have different values. Also, the vertical pitch Pitch-y may have a value different from an integer multiple of the pitch of the pixels in the vertical direction. Here, the pitch of the pixels may be determined based on the interval between the adjacent color filters, color conversion layers, and / or transmissive layers, and may also be determined based on the interval between the openings that overlap the light-emitting layers in the barrier ribs.

[0136] However, compared with the comparative example in FIG. 10, there is a difference because the vertical pitch Pitch-y' and the horizontal pitch Pitch-x' of the spacers CS' in the comparative example have the same value.

[0137] The structure of the spacer CS' formed using a mask will be described below with reference to FIGS. 9 and 10, in comparison with this embodiment.

[0138] FIG. 9 is a plan view showing a spacer and partition walls around the spacer according to a comparative example, and FIG. 10 is a plan view of a color conversion panel of a light emitting display device according to the comparative example.

[0139] 9, the spacer CS' can be formed at an accurate position because it is formed using a mask. Therefore, the spacer forming portion coincides with the planar shape of the spacer CS', and the spacer forming portion is not formed long in one direction.

[0140] The diameter a' of the spacer CS of the comparative example may be the same as the diameter a of the spacer CS of FIG. 6, and the minimum width b' of the comparative example may be the same as the minimum width b of the embodiment of FIG.

[0141] 10, in the comparative example, the pitches Pitch-x' and Pitch-y' between four spacers CS' may be the same. That is, in the comparative example of FIG. 10, the vertical pitch Pitch-y' and the horizontal pitch Pitch-x' of the spacers CS' have the same value.

[0142] 9 and 10, it is possible to form the spacers at accurate positions using a mask, but when forming the spacers using the inkjet method, the spacers may be located at a portion that does not overlap with the partition wall 265 on a plane. In that case, a problem occurs in that the spacers cannot fulfill their role.

[0143] 6 to 8, the spacer forming portion CSL of the partition 265 has an anisotropic planar structure extending in one direction (the extension direction of the spacer forming portion), so that the spacer CS can be formed on the partition 265 regardless of which nozzle NZ among the multiple nozzles NZ in the head HEAD of the inkjet equipment is formed from. As a result, since no mask is used, the manufacturing cost and process time are reduced.

[0144] Hereinafter, various modified embodiments of the present invention will be described with reference to FIGS.

[0145] First, the modified embodiment of FIG. 6 will be described with reference to FIGS.

[0146] 11 to 15 are plan views showing spacers and partitions around the spacers according to various embodiments.

[0147] The embodiment of FIG. 11 is an embodiment formed by moving the position of the spacer CS downward in the structure of FIG.

[0148] In the embodiment of Fig. 11, the spacer forming portion CSL and the spacer CS have a structure having a first margin c1 and a second margin c2, and the sum of the first margin c1 and the second margin c2 may be the same as the margin c value of Fig. 6. The sum of the first margin c1 and the second margin c2 may have a value of 14.1 μm or more and 70.5 μm or less.

[0149] The embodiment of Figure 12 and the embodiment of Figure 13 are embodiments in which the planar shape of the additional margin portion formed with a minimum width b located outside the spacer forming portion CSL in the embodiment of Figure 11 is different from the planar shape of the spacer forming portion CSL.

[0150] That is, the planar shape of the additional margin portion may be an octagonal shape elongated in one direction as shown in Fig. 12, or a quadrangular shape elongated in one direction as shown in Fig. 13. Depending on the embodiment, the shape of the additional margin portion may be various shapes as long as it is formed to be elongated in one direction.

[0151] The modified embodiments of Figures 14 and 15 show an embodiment in which the spacer CS is not circular. In Figure 14, the spacer CS has an octagonal shape, and in Figure 15, the spacer CS has a rectangular shape. Depending on the shape of the spacer CS, the spacer forming portion CSL also has an octagonal or rectangular shape, respectively, and the spacer forming portion CSL is extended long in one direction.

[0152] In the embodiment of Figures 14 and 15, the planar shape of the additional margin portion is the same as the planar shape of the spacer forming portion CSL, and the additional margin portion can have a structure having a minimum width b outside the spacer forming portion CSL.

[0153] As described above, the spacer CS is located inside the spacer forming portion CSL formed long in one direction, and the position of the spacer CS can be changed along the extension direction of the spacer forming portion CSL.

[0154] In this way, the spacer forming portion CSL of the partition 265 has an anisotropic planar structure extending in one direction (extension direction of the spacer forming portion), so that the spacer CS can be formed on the partition 265 regardless of which nozzle NZ among the multiple nozzles NZ in the head HEAD of the inkjet equipment is formed from. As a result, since no mask is used, the manufacturing cost is reduced and the process time is also reduced.

[0155] A structure of the partition wall 265 that differs from that shown in FIG. 8 will be described below with reference to FIGS.

[0156] 16 and 17 are plan views of a color conversion panel of a light emitting display device according to another embodiment.

[0157] In the embodiment of Fig. 16, the first opening 267a, the second opening 267b, and the third opening 267c corresponding to the first color conversion layer 520a, the second color conversion layer 520b, and the transmissive layer 520c are formed in the partition 265 similarly to the embodiment of Fig. 8, and have a rectangular shape. However, there is a difference because the positions of the first opening 267a, the second opening 267b, and the third opening 267c are formed in positions different from those in Fig. 8. In the embodiment of Fig. 16, the openings adjacent to the periphery of the partition 265 where the spacer CS is located are all dummy openings 267-v.

[0158] 16, the spacers CS are located in a portion of the barrier rib 265 that is elongated in one direction, and the position of the spacers CS may be shifted in one direction different from the portion shown in FIG.

[0159] Meanwhile, in Fig. 17, unlike Fig. 8, the first opening 267a, the second opening 267b, and the third opening 267c formed in the partition 265 have a hexagonal structure modified based on a diamond shape. Referring to Fig. 17, the spacer CS is located in a portion of the partition 265 that is formed long in one direction, and the position of the spacer CS may be moved in one direction, unlike the portion shown in Fig. 16.

[0160] In the embodiment of Figure 17, unlike Figure 8, all (none) of the openings adjacent to the periphery of the partition 265 where the spacer CS is located are dummy openings 267-v, and some of the openings may be one of the first opening 267a, the second opening 267b, and the third opening 267c, and one of the first color conversion layer 520a, the second color conversion layer 520b, and the transparent layer 520c may be located in the adjacent opening.

[0161] A modified embodiment of FIGS. 2 and 3 will be described below with reference to FIGS.

[0162] FIG. 18 is a cross-sectional view illustrating a portion of a light emitting display device according to another embodiment, and FIG. 19 is a cross-sectional view illustrating the light emitting display device according to the embodiment of FIG.

[0163] The embodiment of FIG. 18 and FIG. 19 is different from FIG. 2 and FIG. 3 in that the second capping layer 280' is located under the spacer CS and between the partition 265 and the spacer CS. That is, the second capping layer 280 is located on the first color conversion layer 520a, the second color conversion layer 520b, the transmissive layer 520c and the partition 265. The second capping layer 280 may be located over the entire substrate 210. The second capping layer 280 is a layer that covers and protects the first color conversion layer 520a, the second color conversion layer 520b and the transmissive layer 520c, and may be made of an inorganic material. For example, the second capping layer 280 may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiOxNy), etc. The second capping layer 280 may be a single layer or a multi-layer structure of the material.

[0164] A spacer CS may be positioned on the second capping layer 280 , and a filler layer 290 may be positioned on the spacer CS and the second capping layer 280 .

[0165] FIG. 19 shows a state in which the color conversion panel 2000 according to the embodiment of FIG.

[0166] 18 and 19, the spacers CS are also formed by the inkjet method, and can have an anisotropic planar structure in which the spacer forming portions CSL of the partition walls 265 extend in one direction (the extension direction of the spacer forming portions).

[0167] Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the claims also fall within the scope of the present invention. [Industrial Applicability]

[0168] The present invention relates to a display device.

Claims

1. a lower panel including an anode electrode, a light-emitting layer, a cathode electrode, and a pixel-defining membrane having an opening for a light-emitting diode exposing a portion of the anode electrode; and an upper panel located above the lower panel and including a partition wall and a plurality of spacers; The partition wall may overlap the spacers on a plane, and may include a plurality of spacer forming portions extending long in a first direction, The light-emitting display device, wherein the plurality of spacers overlap a portion of the plurality of spacer-forming portions.

2. 2. The light-emitting display device of claim 1, wherein the spacing between the plurality of spacers in the first direction is equal to an integer multiple of the spacing between adjacent pixels in the first direction, and the spacing between the plurality of spacers in a second direction perpendicular to the first direction is not equal to an integer multiple of the spacing between adjacent pixels in the second direction.

3. The light emitting display device of claim 1 , wherein the first direction is the same as an extension direction of a head in an inkjet device that forms the spacers and is perpendicular to a direction in which the head moves in the inkjet device.

4. The light-emitting display device according to claim 3 , wherein the spacer has a diameter of 10 μm or more and 30 μm or less and a height of 2 μm or more and 10 μm or less.

5. The light-emitting display device according to claim 4 , wherein a margin in the first direction excluding the spacer in the spacer forming portion is 14.1 μm to 70.5 μm.

6. The head of the inkjet device includes a plurality of nozzles; The light emitting display device according to claim 5 , wherein the margin in the first direction is equal to a minimum nozzle spacing in the first direction among the plurality of nozzles.

7. The light-emitting display device according to claim 5 , wherein the length in the first direction of the spacer forming portion is not less than 24.1 μm and not more than 90.5 μm.

8. The partition wall further includes an additional margin portion located around the spacer forming portion, The light emitting display device according to claim 5 , wherein the additional margin portion has a width of 5 μm to 15 μm.

9. The light emitting display device according to claim 8 , wherein a planar shape of the additional margin portion is the same as or different from a planar shape of the spacer forming portion.

10. the top panel further comprises a top capping layer; the upper capping layer comprises one of silicon nitride (SiNx), silicon oxide (SiOx) and silicon oxynitride (SiOxNy); The light emitting display device of claim 1 , wherein the upper capping layer covers the barrier ribs and the spacers.

11. the top panel further comprises a top capping layer; the upper capping layer comprises one of silicon nitride (SiNx), silicon oxide (SiOx) and silicon oxynitride (SiOxNy); The light emitting display device of claim 1 , wherein the upper capping layer is located between the barrier rib and the spacer.

12. the partition wall includes a first opening, a second opening, and a third opening; 2. The light emitting display device of claim 1, wherein the upper panel further includes a first color conversion layer positioned in the first opening, a second color conversion layer positioned in the second opening, and a transmissive layer positioned in the third opening.

13. the pixel defining film includes a plurality of openings for the light emitting diodes; The light emitting display device according to claim 12 , wherein the plurality of light emitting diode openings overlap, in a plane, the first opening, the second opening, and the third opening of the partition wall, respectively.

14. the top panel further comprises a first color filter, a second color filter, and a third color filter; the first color filter overlaps with the first color conversion layer on a plane, the second color filter overlaps with the second color conversion layer on a plane, and the third color filter overlaps with the transmissive layer on a plane, The light emitting display device of claim 13 , wherein a light blocking region where at least two of the first color filter, the second color filter, and the third color filter overlap overlaps with the partition wall on a plane.

15. The partition wall further includes a dummy opening, The light emitting display device according to claim 14 , wherein the dummy opening overlaps with the light blocking region in a plan view.

16. A plurality of spacers; a partition including a plurality of spacer forming portions that are overlapped with the plurality of spacers in a plane and extend long in a first direction, the partition including a first opening, a second opening, and a third opening; a first color conversion layer located within the first opening; a second color conversion layer located in the second opening; and a transmissive layer located within the third opening; The color conversion panel includes a plurality of spacers each overlapping a portion of the spacer forming portion.

17. 17. The color conversion panel of claim 16, wherein the spacing between adjacent spacers in the first direction is different from the spacing between adjacent spacers in a second direction perpendicular to the first direction.

18. The color conversion panel of claim 16 , wherein the first direction is the same as an extension direction of a head of an inkjet device that forms the spacers and is perpendicular to a direction in which the head of the inkjet device moves.

19. the partition wall further includes a plurality of additional margin portions located around each of the plurality of spacer forming portions; Each of the plurality of spacers has a diameter of 10 μm or more and 30 μm or less and a height of 2 μm or more and 10 μm or less; a margin in the first direction excluding the spacers located in each of the plurality of spacer forming portions is 14.1 μm or more and 70.5 μm or less; 20. The color conversion panel of claim 18, wherein each of the plurality of additional margin portions has a width of 5 μm or more and 15 μm or less.

20. further comprising a first color filter, a second color filter, and a third color filter; the first color filter overlaps with the first color conversion layer on a plane, the second color filter overlaps with the second color conversion layer on a plane, and the third color filter overlaps with the transmissive layer on a plane, a light-shielding region where at least two of the first color filter, the second color filter, and the third color filter overlap overlaps with the partition wall on a plane; The color conversion panel according to claim 16 , wherein the partition wall further includes a dummy opening, the dummy opening overlapping the light blocking region in a plan view.

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