Substrate Treatment Apparatus

Abstract

According to one embodiment of the present invention, a substrate processing apparatus includes a chamber having a sidewall, a susceptor for mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and made of a transparent dielectric material, an antenna disposed on top of the upper dome for forming an inductively coupled plasma, and an electromagnetic wave shielding housing disposed to surround the antenna, the electromagnetic wave shielding housing being heated by a heater.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to an epitaxial plasma enhanced chemical vapor deposition apparatus that deposits a thin film by rapidly heating a substrate at a high temperature using a lamp heater. [Background technology]

[0002] In semiconductor manufacturing, a single crystal silicon thin film having the same crystal structure as the silicon substrate is deposited on a single crystal silicon substrate. During the growth of the single crystal silicon thin film, an inorganic insulating material such as silicon oxide is deposited and patterned, and a single crystal region is formed only on the exposed silicon part of the substrate surface. This is called selective epitaxial growth (SEG).

[0003] Also, in manufacturing a thin-film solar cell on a large-area substrate, a P layer that receives sunlight, an I layer that forms electron-hole pairs, and an N layer that acts as an opposing electrode for the P layer are the basic components. Similarly, a liquid crystal display device is based on array elements and color filter elements formed on array and color filter substrates, respectively.

[0004] To manufacture thin film devices for solar cells and liquid crystal displays, several photolithography processes are required, including a thin film deposition process, a photosensitive layer coating process, an exposure and development process, and an etching process, as well as various other processes such as cleaning, bonding, and cutting.

[0005] In the plasma enhanced chemical vapor deposition (PECVD) method, a thin film is formed in a state where a reactive gas is excited into a plasma state inside a chamber by applying a radio frequency (RF) high voltage to an antenna or an electrode.

[0006] Recently, in order to prevent foreign matter and by-products generated during the deposition process using plasma chemical vapor deposition from adhering to the inner walls of the chamber, the inner walls are designed with quartz, and upper and lower domes are designed at the top and bottom of the chamber, both of which are made of quartz.

[0007] The deposition process using the plasma enhanced chemical vapor deposition method maintains the pressure inside the chamber at several mTorr, and maintains an ultra-high vacuum state of 10E-9 Torr at the base vacuum level, thereby minimizing the number of foreign particles and by-products generated during the deposition process and shortening the deposition process time, thereby improving production yield.

[0008] However, the plasma-enhanced chemical vapor deposition method has problems in that the antenna disposed on the upper dome is heated by infrared rays, which reduces plasma stability, and the antenna reflects infrared rays, which reduces the uniformity of the thin film. Therefore, a new plasma source and thin film deposition method are required. DISCLOSURE OF THEINVENTION [Problem to be solved by the invention]

[0009] The technical problem to be solved by the present invention is to provide a substrate processing apparatus that has a built-in heater to minimize heat loss in an electromagnetic shielding housing surrounding an antenna, and is connected to a chamber or a connecting portion of a chamber through an insulating spacer to provide insulation and provide stable operation.

[0010] The technical problem to be solved by the present invention is to provide a substrate processing apparatus that prevents damage to components due to high temperatures through a cooling housing that surrounds an electromagnetic wave shielding housing.

[0011] The technical problem to be solved by the present invention is to provide an antenna capable of stably forming plasma even when heated by external infrared rays, and a substrate processing apparatus equipped with the antenna.

[0012] The technical problem to be solved by the present invention is to provide a substrate processing apparatus which reduces contamination of the lower dome and the lower liner.

[0013] The technical problem to be solved by the present invention is to provide a substrate processing apparatus which ensures uniformity through the shape of the clamp, the shape of the antenna housing, and uniform substrate heating through gold plating.

[0014] The technical problem to be solved by the present invention is to provide a substrate processing apparatus which simultaneously provides uniform infrared heating and uniform plasma.

[0015] The technical problem to be solved by the present invention is to provide a substrate processing apparatus that provides a uniform process using an antenna for forming plasma and a resistive heater embedded in an antenna housing arranged to cover the antenna. [Means for solving the problem]

[0016] According to one embodiment of the present invention, a substrate processing apparatus includes a chamber having a sidewall, a susceptor for mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and made of a transparent dielectric material, an antenna disposed on top of the upper dome for forming an inductively coupled plasma, and an electromagnetic wave shielding housing disposed to surround the antenna, the electromagnetic wave shielding housing being heated by a heater.

[0017] In one embodiment of the present invention, the device further includes a thermal insulation spacer that is thermally insulated from the electromagnetic shielding housing and an upper surface of the chamber.

[0018] In one embodiment of the present invention, the heat insulating spacer is a ring made of ceramic material.

[0019] In one embodiment of the present invention, the electromagnetic wave shielding housing may further include a cooling housing spaced apart from the electromagnetic wave shielding housing, the cooling housing being cooled by a refrigerant.

[0020] In one embodiment of the present invention, the temperature of the electromagnetic shielding housing is between 200 degrees Celsius and 600 degrees Celsius.

[0021] In one embodiment of the present invention, the chamber further includes a funnel-shaped lower dome covering a lower surface of the chamber and formed of a transparent dielectric material, a concentric lamp heater disposed on the lower surface of the lower dome, a ring-shaped upper liner disposed inside the chamber, surrounding a lower edge of the upper dome and formed of a dielectric material, a ring-shaped lower liner disposed inside the chamber, surrounding an inner surface of an upper edge of the lower dome and formed of a dielectric material, and a reflector disposed on the lower surface of the concentric lamp heater.

[0022] In one embodiment of the present invention, the antenna includes two one-turn unit antennas, which are arranged to overlap each other on the upper and lower surfaces, and are connected in parallel to an RF power source, and the width direction of the one-turn unit antennas is vertically erected.

[0023] In one embodiment of the present invention, the one-turn antenna has a stripline shape having a width greater than its thickness, the width direction of the one-turn unit antenna is vertical, and the ratio W / t of the width W to the thickness t is 10 or more. Effect of the Invention

[0024] The substrate processing apparatus according to an embodiment of the present invention performs selective epitaxial deposition by stably forming plasma even in a high temperature process using a lamp heater. BEST MODE FOR CARRYING OUT THEINVENTION

[0025] The present invention provides a plasma enhanced chemical vapor deposition apparatus having an inductively coupled plasma antenna that is highly transparent to infrared rays emitted by a lamp heater, is not heated, and forms a uniform inductively coupled plasma.

[0026] In order to grow silicon-germanium single crystal or silicon single crystal on a substrate, a high process temperature of about 900 degrees Celsius is usually required. In semiconductor manufacturing using such selective epitaxial growth, it is advantageous in that it is easy to manufacture semiconductor devices with three-dimensional structures such as FinFETs, which are difficult to manufacture using existing flat panel technology.

[0027] When a lamp heater is applied for a process temperature of 900 degrees Celsius, an antenna for forming an inductively coupled plasma in a process chamber is heated by the lamp heater, and the resistance value increases with the increase in temperature. Therefore, the antenna consumes energy through ohmic heating and does not form an efficient inductively coupled plasma. In addition, the antenna forms a shadow on the infrared rays reflected from the electromagnetic shielding housing, causing temperature non-uniformity on the substrate. For process stability, the electromagnetic shielding housing is heated to maintain the antenna at a constant temperature and shield the electromagnetic waves.

[0028] There is also a need for an antenna for an inductively coupled plasma that is not heated by a lamp heater and does not cast a shadow.

[0029] Also, the electromagnetic shielding housing arranged to surround the antenna reflects part of the infrared rays emitted from the lamp heater, and the remaining infrared rays are absorbed and heated by the electromagnetic shielding housing, reducing reliability. The spatially non-uniform temperature distribution in the electromagnetic shielding housing provides spatially non-uniform blackbody radiation. Therefore, the electromagnetic shielding housing uses a separate resistive heater to heat at a uniform temperature, providing spatially uniform blackbody radiation. The electromagnetic shielding housing is heated to 200 to 600 degrees Celsius, and heat loss increases when it is in direct thermal contact with the chamber. Therefore, the electromagnetic shielding housing is insulated from the chamber to minimize heat loss. That is, a heat insulating spacer is arranged between the electromagnetic shielding housing and the chamber to reduce heat loss of the electromagnetic shielding housing. Meanwhile, the electromagnetic shielding housing is electrically grounded through a separate conductive line. The heat insulating spacer is ring-shaped and made of ceramic material. The heat insulating spacer is made of porous ceramic material.

[0030] In a conventional chemical vapor deposition apparatus having an upper dome and a lower dome, a process gas is injected into the upper dome and exhausted from the upper dome. Therefore, the gas flows in a certain direction in the upper dome, which reduces the thin film uniformity. The process gas supplied from the upper dome flows into the lower dome, which causes an abnormal thin film to be deposited on the lower dome.

[0031] In the present invention, a purge gas is supplied to the lower dome and a process gas is supplied to the upper dome, thereby preventing the process gas from flowing into the lower dome and suppressing deposition of an abnormal thin film on the lower dome. In addition, a uniform plasma is formed to form a uniform thin film without rotating the substrate.

[0032] Conventional upper and lower dome chemical vapor deposition apparatus use liners that are periodically replaced or cleaned to prevent unwanted deposition of thin films on the interior walls of the chamber.

[0033] In the present invention, the lower side of the upper liner and the lower liner have inclined surfaces so that the purge gas supplied from the lower dome is injected toward the upper dome and more lamp heaters can be installed. The gap between the susceptor and the liner is kept narrow, and the purge gas supplied from the lower dome is injected toward the upper dome, inducing a pressure difference. Due to the narrow gap between the susceptor and the liner, the process gas injected into the upper dome remains only inside the upper dome, preventing contamination of the lower liner. The lower liner is made of an opaque quartz material and scatters infrared rays from the heater lamps to provide uniform heating of the substrate.

[0034] In the present invention, an antenna for inductively coupled plasma is disposed at a distance from the upper dome, and the conductor constituting the antenna is in the form of a strip line, with the width direction of the strip line aligned vertically. Therefore, infrared rays incident from the direction of the lower dome are minimally incident on the antenna. Therefore, the antenna suppresses heating caused by infrared rays, and infrared rays reflected from the electromagnetic shielding housing heat the substrate while minimizing shadows.

[0035] In the present invention, the electromagnetic shield housing that covers the antenna and provides electromagnetic shielding is gold plated, so that infrared rays are reflected and re-enter the substrate. Also, the electromagnetic shield housing is cylindrical rather than dome-shaped, so that re-entering heating of the antenna due to infrared reflection is reduced.

[0036] In the present invention, the lamp heaters arranged under the lower dome are ring-shaped lamp heaters, and there are a plurality of them. The ring-shaped lamp heaters are grouped together and independently control power to uniformly heat the substrate.

[0037] In the present invention, a turbo molecular pump (TMP) connected to an exhaust section of the chamber maintains a base vacuum inside the chamber and forms a stable plasma at a pressure of a few Torr or less during processing.

[0038] The plasma-assisted chemical vapor deposition of the present invention reduces performance degradation caused by infrared heating of the inductively coupled plasma antenna disposed on the upper dome, and also provides infrared rays reflected from the electromagnetic shielding housing back to the substrate to form a uniform thin film on the substrate at high speed.

[0039] The present invention will be described in more detail with reference to the accompanying drawings. The present invention will be described in more detail with reference to the preferred embodiments. However, it is obvious to those skilled in the art that the embodiments are provided to more specifically describe the present invention, and the present invention is not limited or restricted by experimental conditions, types of materials, and the like. The present invention is not limited to the embodiments described herein, and may be embodied in other forms. Rather, the embodiments described herein are provided so that the disclosure will be thorough and complete, and will fully convey the concept of the present invention to those skilled in the art. In the drawings, the dimensions of components are exaggerated for clarity. The same components are designated by the same reference numerals throughout the specification.

[0040] FIG. 1 is a conceptual diagram illustrating a home position in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention.

[0041] FIG. 2 is a conceptual diagram for explaining the ascending position in the plasma enhanced chemical vapor deposition apparatus of FIG.

[0042] FIG. 3 is a schematic diagram illustrating the plasma enhanced chemical vapor deposition apparatus of FIG. 1, cut in another direction.

[0043] FIG. 4 is a cutaway perspective view illustrating the upper liner, lower liner, and lower dome of the plasma enhanced chemical vapor deposition apparatus of FIG.

[0044] FIG. 5 is a perspective view illustrating an antenna of the plasma enhanced chemical vapor deposition apparatus of FIG.

[0045] FIG. 6 is a plan view illustrating the antenna of FIG.

[0046] 1 to 6, a plasma enhanced chemical vapor deposition apparatus 100 according to an embodiment of the present invention includes a chamber 160 having a sidewall, a susceptor 172 for mounting a substrate inside the chamber, an upper dome 152 made of a transparent dielectric material and covering an upper surface of the chamber 160, an antenna 110 disposed on the upper dome 152 for forming an inductively coupled plasma, and an electromagnetic shielding housing 130 disposed to surround the antenna. The electromagnetic shielding housing 130 is heated by a heater.

[0047] The antenna 110 includes two one-turn unit antennas, which are arranged to overlap each other on the upper and lower surfaces, and are connected in parallel to an RF power source 140, with the width direction of the one-turn unit antennas standing vertically.

[0048] The chamber 160 is made of a conductive material, has a cylindrical inner space, and a rectangular outer space. The chamber 160 is cooled by cooling water. The chamber 160, the upper dome 152, and the lower dome 158 are combined to provide a sealed space. The chamber 160 includes a substrate inlet 160a formed on a side of the chamber, and an exhaust port 160b formed on a side opposite the substrate inlet. The exhaust port 160b is connected to a high vacuum pump 190. The high vacuum pump 190 is a turbo molecular pump. The high vacuum pump maintains a low base pressure and maintains a pressure of several Torr or less during the process. The top surface of the exhaust port 160b is equal to or lower than the top surface of the substrate inlet 160a.

[0049] For example, if the top surface of the exhaust port 160b is flush with the top surface of the substrate inlet 160a, the top surface of the susceptor is moved higher than the bottom surfaces of the exhaust port 160b and the substrate inlet during processing, thereby improving symmetry within the chamber and the flow of process gases to provide uniform thin film deposition.

[0050] The susceptor 172 receives the substrate 174 when it is drawn in through a substrate inlet 160a formed on the side of the chamber. The susceptor 172 is of the same plate shape as the substrate and is made of metal or graphite material with excellent thermal conductivity. The susceptor 172 is heated by infrared rays and heats the substrate 174 through heat transfer. During the process, the upper surface of the susceptor is higher than the lower surfaces of the exhaust port and the substrate inlet. The susceptor 172 rotates.

[0051] The first lifter 184 extends along the central axis of the lower dome 158 and includes a tripod-shaped first lifter body and a first lift pin. The first lifter 184 and the second lifter 182 have a coaxial structure. When the substrate 174 is transferred into the chamber, the first lifter 184 rises from a storage position or a home position to support the substrate. Then, the first lifter 184 descends to lower the substrate onto the susceptor 174. The first lifter 184 is made of quartz or metal. The first lifter 184 moves vertically by a drive shaft.

[0052] The second lifter 182 extends along the central axis of the lower dome 158 and includes a tripod-shaped second lifter body and a second lift pin. The second lifter 182 raises the susceptor 172 on which the substrate is mounted to a process position or a raised position. The process position is disposed on substantially the same plane as the lower surface of the second opening 154b for the inflow of the substrate from the upper liner 154. Also, the process position is disposed on substantially the same plane as the lower surface of the opening 154a for the exhaust of gas from the upper liner 154. Therefore, the distance between the susceptor 172 and the upper liner 154 is minimized at the process position. The material of the second lifter 182 is quartz or metal. The second lifter 182 moves vertically by a driving shaft.

[0053] The upper dome 152 is a transparent dielectric material such as quartz or sapphire. The upper dome 152 is inserted into a recess formed on the upper surface of the chamber 160 and coupled thereto. The coupling portion of the upper dome 152 that couples with the chamber 160 for vacuum sealing is in the shape of a washer. The upper dome 152 is in the shape of an arc or an ellipse. The upper dome 152 transmits infrared rays incident from below. The infrared rays reflected from the electromagnetic shielding housing 130 transmit through the upper dome 152 and enter the substrate 174.

[0054] The lower dome 158 is a transparent dielectric such as quartz or sapphire. The lower dome 158 includes a funnel-shaped lower dome body 158b, a washer-shaped coupling part 158a that is coupled to a recess formed on the lower surface of the chamber, and a cylindrical pipe 158c that is connected to the center of the lower dome body 158b. The lower dome 158 is inserted into a recess formed on the lower surface of the chamber to couple with it. The lower dome 158 has a washer-shaped coupling part 158a that couples with the chamber for vacuum sealing. The driving shaft of the first lifter and the driving shaft of the second lifter are inserted and disposed in the cylindrical pipe 158c. The purge gas supplied through the lower dome is supplied through a flow path. The flow path is the cylindrical pipe 158c. The purge gas is an inert gas such as argon.

[0055] The upper liner 154 is a transparent dielectric material. The upper liner 154 is quartz, alumina, sapphire, or aluminum nitride. The upper liner 154 is selected as a material that suppresses deposition of abnormal thin films. When the upper liner 154 is contaminated, it is disassembled and cleaned. The upper liner 154 is generally ring-shaped, and the upper surface is a curved surface having the shape of the upper dome. The upper liner 154 includes a first opening 154a formed on one side of the upper liner to exhaust gas, and a second opening 154b formed on the side of the upper liner to provide a passage for the substrate on the other side opposite the first opening 154a. The first opening 154a is aligned with the exhaust portion, and the second opening is aligned with the substrate inlet / outlet. The inner side of the upper liner 154 extends vertically and is connected to a tapered portion 154c tapered from the lower surface of the first opening 154a. The tapered inner surface has the same inclination as the inner surface of the lower liner 156. The inclination angle θ of the inclined surface is about 70 degrees, so that the purge gas is stably supplied to the upper region of the chamber.

[0056] The upper liner 154 includes at least one process gas supplying part 159a, 159b for supplying a process gas through a side surface of the upper liner. The process gas supplying part protrudes from a side surface of the upper liner. For example, the process gas supplying part includes a first process gas supplying part for supplying a first process gas such as SiH4 and a second process gas supplying part for supplying a second process gas.

[0057] The first process gas supply portion 159a protrudes largely from the side of the upper liner so that the first process gas, such as SiH4, is more exposed to the plasma. Meanwhile, the second process gas supply portion 159b protrudes little from the side of the upper liner so that the second process gas, such as H2, is less exposed to the plasma. The purge gas is introduced into the upper region of the chamber from the lower dome and is uniformly supplied around the circumference, providing a spatially uniform pressure distribution.

[0058] The lower liner 156 is combined with the upper liner. The lower liner is disposed inside the chamber, and is a ring-shaped member made of an opaque dielectric material that surrounds the inner circumferential surface of the upper edge of the lower dome. The upper liner 154 is disposed on the lower liner 156, aligned, and combined. The lower liner 156 includes a lower outer circumferential surface 156b that is inclined to combine with the lower dome 158, and a lower inner circumferential surface 156a that is inclined to maintain a continuous inclination with the upper liner. The lower liner 156 is made of quartz, an opaque material. That is, the lower liner has an inner circumferential surface that faces the space of the lower dome, and the inner circumferential surface of the lower liner has an inclination that becomes thicker from the lower region to the upper region of the chamber in the vertical direction. The inclination angle θ of the inner circumferential surface is about 70 degrees. The inclined inner circumferential surface exposes the lamp heaters arranged at the top to provide more uniform heating, and scatters incident infrared rays to suppress heating of the chamber.

[0059] The heat insulating part 162 is disposed between the lower surface of the chamber 160 and the reflector 161 and has a ring shape. The heat insulating part 162 reduces heat transfer from the heated reflector 161 to the chamber. The heat insulating part 162 is made of a ceramic material. The upper surface of the heat insulating part 162 has a recess. The recess of the heat insulating part and the recess of the lower surface of the chamber receive the washer-shaped coupling part 158a of the lower dome and form a vacuum seal.

[0060] The concentric lamp heater 166 includes a plurality of concentric ring-shaped lamp heaters and is connected to a power source 164. The concentric ring-shaped lamp heaters are arranged at regular intervals along the inclined surface of the lower dome 158, and the concentric lamp heaters 166 are divided into three groups and are supplied with power independently of each other. The concentric ring-shaped lamp heaters are inserted into ring-shaped grooves formed on the inclined surface of the reflector 161 and aligned. For example, the concentric lamp heaters 166 are halogen lamp heaters and there are eight of them. The lower three lamp heaters form a first group, the middle two lamp heaters form a second group, and the upper three lamp heaters form a third group. The first group is connected to a first power source 164a, the second group is connected to a second power source 164b, and the third group is connected to a third power source 164c. The first through third power sources 164a through 164c are independently controlled for uniform heating of the substrate.

[0061] The reflector 161 supports the lower surface of the heat insulating part 162 and mounts the lamp heater 166. The inclined surface on which the lamp heater 166 is mounted is cone-shaped so as to maintain a certain distance from the inclined surface of the lower dome 158. The reflector 161 is made of a conductor and is cooled by cooling water.

[0062] The clamp 150 is disposed to contact the upper surface of the chamber and cover the edge of the upper dome 152. The clamp 150 is a part of the chamber that functions as a lid of the chamber. The clamp 150 is made of a conductor and is cooled by cooling water. The lower surface of the clamp 150 has a recess to be coupled to a washer-shaped coupling portion of the upper dome and includes a curved portion 150a to cover a part of the curved portion of the upper dome 152. The curved portion 150a of the clamp 150 is gold-plated to reflect infrared rays. The inner diameter of the clamp 150 is substantially the same as the inner diameter D of the upper liner. The inner diameter of the clamp 150 is also the same as the diameter of the electromagnetic shield housing 130.

[0063] The antenna 110 includes two one-turn unit antennas 110a and 110b. The antenna 110 is arranged to overlap each other at the top and bottom, the one-turn unit antennas are stripline shaped with a width greater than a thickness, and the width direction of the one-turn antennas is vertical. The two one-turn unit antennas are connected in parallel to an RF power source 140. The RF power source 140 supplies RF power to the antenna 110 through an impedance matching box 142 and a power supply line 143. The antenna includes two one-turn unit antennas, the two one-turn unit antennas are arranged to overlap each other at the top and bottom, the two one-turn unit antennas are connected in parallel to an RF power source, and the width direction of the one-turn unit antennas is vertical.

[0064] Antennas that carry RF current must have a sufficient cross-sectional area for high current and must form a closed loop to generate sufficient magnetic flux. Also, multiple turns are required to ensure sufficient magnetic flux or high inductance. Therefore, a laminated structure is required. However, antennas with widths standing vertically take up a lot of space and are disadvantageous in ensuring sufficient magnetic flux, so they are not usually used.

[0065] In the present invention, the antenna 110 uses a vertically standing stripline to absorb infrared rays incident from the top or bottom of the antenna and minimize an increase in resistance due to heating, and the antenna 110 provides high transparency to infrared rays.

[0066] The antenna is coated with gold (Au) or silver (Ag) to increase infrared reflection. A two-layer antenna is used to ensure sufficient magnetic flux. The one-turn unit antenna is arranged on the upper surface where it receives RF power, reducing power loss due to capacitive coupling. The aspect ratio (ratio of width (W) to thickness (t)) W / t of the stripline is 10 or more. The stripline has a thickness of several millimeters and a width of several centimeters. The erected stripline structure does not impede the flow of inflowing air, providing smooth air cooling. In addition, infrared rays reflected from the electromagnetic shielding housing are minimized from casting a shadow on the antenna.

[0067] The lower surface of the antenna 110 is substantially flush with the upper surface of the clamp 150 and is higher than the highest point of the upper dome 152. Therefore, the antenna 110 does not directly contact the upper dome 152 and does not directly heat the upper dome 152 by heat transfer. The two one-turn unit antennas 110a and 110b are rotated 180 degrees and arranged to overlap each other. Each of the one-turn unit antennas 110a and 110b is arranged on the lower surface at a predetermined section and on the upper surface at the remaining section.

[0068] The one-turn unit antennas 110a and 110b include radius portions 112a and 112b extending from an upper surface in a radial direction from a center of the one-turn unit antenna, first curved portions 113a and 113b extending from the upper surface by rotating 90 degrees clockwise along a circumference having a first radius R1 at the radius portions, first vertical extensions 114a and 114b changing the arrangement plane from the upper surface to the lower surface at the first curved portions, and a first vertical extension portion 114a and 114b rotating 90 degrees clockwise along a circumference having a first radius R1 at the first vertical extension portion. and second curved portions 115a, 115b that rotate 180 degrees from the first radius to a second radius R2 that is smaller than the first radius, second vertical extension portions 116a, 116b that are continuously connected to the second curved portions and change the radius from the second radius to the first radius by changing the arrangement plane from the lower surface to the upper surface, and third curved portions 117a, 117b that rotate 90 degrees clockwise along a circumference having the first radius from the second vertical extension portions and extend from the upper surface. The third curved portions 117a, 117b are connected to ground portions that extend in the radial direction.

[0069] An electromagnetic shielding housing 130 is disposed to surround the antenna 110, and the inner surface of the electromagnetic shielding housing is coated with gold (Au). The electromagnetic shielding housing 130 blocks electromagnetic waves radiated from the antenna and reflects infrared rays radiated from a lamp heater. The electromagnetic shielding housing 130 is heated by a heater. The temperature of the electromagnetic shielding housing is 200°C to 600°C. The electromagnetic shielding housing blocks electromagnetic waves radiated from the antenna. The electromagnetic shielding housing is made of a conductive material and is heated by a heater embedded inside. The electromagnetic shielding housing is grounded by a separate conductor.

[0070] The insulating spacer 339 provides thermal insulation between the electromagnetic shielding housing and the upper surface of the chamber or the clamp. The insulating spacer 339 is a ring-shaped ceramic material. The insulating spacer is covered with a wire mesh gasket. The wire mesh gasket electrically connects the electromagnetic shielding housing and the clamp and minimizes heat transfer.

[0071] The cooling housing 132 is disposed at a distance from the electromagnetic shielding housing so as to surround the electromagnetic shielding housing. The cooling housing 132 has a flow passage therein and is cooled by a refrigerant. The cooling housing 132 is made of a conductor and is attached to the clamp 150. The cooling housing 132 blocks radiant heat from the electromagnetic shielding housing to prevent damage to external components.

[0072] A cooling housing 132 is disposed on the clamp 150 and is disposed to cover the electromagnetic shielding housing. The cooling housing 132 is disposed to surround the electromagnetic shielding housing. The cooling housing 132 includes a flow passage 132a for injecting and discharging air into the electromagnetic shielding housing 130. The air injected into the electromagnetic shielding housing cools the antenna and the upper dome.

[0073] FIG. 7 is a plan view illustrating an antenna according to another embodiment of the present invention.

[0074] 7, the antenna 100' includes two one-turn unit antennas 110a and 110b. The one-turn unit antennas 110a and 110b include radius portions 112a and 112b extending from the upper surface in a radial direction from the center of the one-turn unit antenna, first curved portions 113a and 113b extending from the upper surface by rotating 90 degrees clockwise along a circumference having a first radius R1 at the radius portions, first vertical extensions 114a and 114b changing the arrangement plane from the upper surface to the lower surface at the first curved portions, and a first vertical extension portion 114a and 114b rotating 90 degrees clockwise along the circumference having a first radius R1 at the first vertical extension portion. and second vertical extensions 116a, 116b that are continuously connected to the second curved portions and change their radius from the first radius to a second radius R2 greater than the first radius, change the arrangement plane from the lower surface to the upper surface, and change their radius from the second radius to the first radius, and third curved portions 117a, 117b that extend from the upper surface by rotating 90 degrees clockwise along a circumference having the first radius from the second vertical extensions. The third curved portions 117a, 117b are connected to ground portions extending in the radial direction.

[0075] FIG. 8 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention.

[0076] 8, a plasma enhanced chemical vapor deposition apparatus 200 according to an embodiment of the present invention includes a chamber having a sidewall, a susceptor 172 for mounting a substrate inside the chamber, an upper dome 152 made of a transparent dielectric material and covering an upper surface of the chamber 160, an antenna 110 disposed on the upper dome 152 for forming an inductively coupled plasma, and an electromagnetic shielding housing 130 disposed to surround the antenna. The electromagnetic shielding housing 130 is heated by a heater.

[0077] The antenna 110 includes two one-turn unit antennas, which are arranged to overlap each other on the upper and lower surfaces, and are connected in parallel to an RF power source 140, with the width direction of the one-turn unit antennas standing vertically.

[0078] A lower dome 258 covers the lower surface of the chamber, is made of a transparent dielectric material, and has a curvature similar to that of the upper dome 152. A lamp heater is disposed on the lower surface of the lower dome 258. The reflector is disposed on the lower surface of the lamp heater.

[0079] FIG. 9 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention.

[0080] 9, a plasma enhanced chemical vapor deposition apparatus 300 according to an embodiment of the present invention includes a chamber 160 having a sidewall, a susceptor 172 for mounting a substrate inside the chamber, an upper dome 152 made of a transparent dielectric material and covering an upper surface of the chamber 160, an antenna 110 disposed on the upper dome 152 for forming an inductively coupled plasma, and an electromagnetic shielding housing 130 disposed to surround the antenna. The electromagnetic shielding housing 130 is heated by a heater.

[0081] The antenna 110 includes two one-turn unit antennas, the two one-turn units being arranged to overlap each other on the upper and lower surfaces, the two one-turn unit antennas being connected in parallel to an RF power source 140, and the width direction of the one-turn unit antennas being vertical.

[0082] The electromagnetic shielding housing 330 is disposed to surround the antenna 110, and the inner surface of the electromagnetic shielding housing is coated with gold (Au). The electromagnetic shielding housing 330 is made of a conductive material that has a high reflectance in the infrared band, such as a metal. Specifically, the electromagnetic shielding housing 330 is a cylindrical aluminum body having a lid.

[0083] The electromagnetic shield housing 330 is disposed on the clamp 150, shields electromagnetic waves radiated from the antenna 110, reflects infrared rays radiated from the lamp heater 162, and absorbs the infrared rays from the lamp heater 162 to be uniformly heated. In order to heat the electromagnetic shield housing 330 spatially uniformly, a separate heater 331 heats the electromagnetic shield housing 330. The heater 331 is a resistive heater embedded in the electromagnetic shield housing 330. The resistive heater is embedded in the cover of the electromagnetic shield housing 330 in a spiral shape. For spatially uniform temperature distribution, the heater interval decreases as it advances in the radial direction. The uniformly heated electromagnetic shield housing 330 additionally heats the substrate 174 through blackbody radiation. The heated electromagnetic shield housing 330 does not provide a temperature difference due to the environment, improving process reliability.

[0084] The temperature of the electromagnetic shielding housing 330 is higher than the temperature heated by the lamp heater 162. For example, the temperature of the electromagnetic shielding housing 330 is 200 degrees Celsius to 600 degrees Celsius.

[0085] The antenna 110 is additionally heated by the heated electromagnetic shield housing 110. However, the antenna 110 is in the form of a standing strip, so it absorbs less radiant heat without impeding the flow of inflowing air, and is cooled by the smooth flow of air.

[0086] The cooling housing 332 is placed on the clamp 150 and is placed to cover the electromagnetic shielding housing 330. There is a space between the cooling housing 332 and the electromagnetic shielding housing, and the space reduces heat loss due to heat transfer. The space is at atmospheric pressure, and the air filling the space does not circulate.

[0087] The cooling housing 332 includes a flow passage 333 through which a coolant flows, and the chamber housing is cooled to room temperature. The chamber housing 332 is cylindrical with a lid and is made of a conductive material.

[0088] An air passage passes through the cooling housing 332 and the electromagnetic shielding housing 330 to inject air into a space formed by the electromagnetic shielding housing 330. The air injected into the electromagnetic shielding housing 330 cools the antenna 110 to provide stable operation.

[0089] FIG. 10 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention.

[0090] 10, a plasma enhanced chemical vapor deposition apparatus 300a according to an embodiment of the present invention includes a chamber 160 having a sidewall, a susceptor 172 for mounting a substrate inside the chamber, an upper dome 152 made of a transparent dielectric material and covering an upper surface of the chamber 160, an antenna 110 disposed on the upper dome 152 for forming an inductively coupled plasma, and an electromagnetic shielding housing 130 disposed to surround the antenna. The electromagnetic shielding housing 330 is heated by a heater.

[0091] A chamber housing 338 is disposed to surround the cooling housing 332. The chamber housing 338 mounts an external device such as an impedance matching box 142. The chamber housing 338 is grounded and is made of a conductor.

[0092] Although the present invention has been illustrated and described with respect to specific preferred embodiments, the present invention is not limited to such embodiments, but includes all various forms of embodiments that can be implemented by a person having ordinary skill in the art to which the invention pertains without departing from the technical spirit of the present invention as claimed in the claims. [Brief description of the drawings]

[0093] [Figure 1] 2 is a conceptual diagram illustrating a home position in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention; [Diagram 2] FIG. 2 is a conceptual diagram for explaining an ascending position in the plasma enhanced chemical vapor deposition apparatus of FIG. 1. [Diagram 3] FIG. 2 is a schematic diagram illustrating the plasma enhanced chemical vapor deposition apparatus of FIG. 1, cut in a different direction. [Figure 4] 2 is a cutaway perspective view illustrating an upper liner, a lower liner, and a lower dome of the plasma enhanced chemical vapor deposition apparatus of FIG. 1. [Diagram 5] FIG. 2 is a perspective view illustrating an antenna of the plasma enhanced chemical vapor deposition apparatus of FIG. 1. [Figure 6] FIG. 6 is a plan view illustrating the antenna of FIG. 5. [Figure 7] FIG. 13 is a plan view illustrating an antenna according to another embodiment of the present invention. [Figure 8] FIG. 2 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention. [Figure 9] FIG. 2 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention. [Figure 10] FIG. 2 is a conceptual diagram showing a plasma enhanced chemical vapor deposition apparatus according to another embodiment of the present invention.

Claims

1. a chamber having a sidewall; a susceptor for mounting a substrate inside the chamber; an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material; an antenna disposed on the upper dome to form an inductively coupled plasma; an electromagnetic wave shielding housing arranged to surround the antenna; A substrate processing apparatus comprising: the electromagnetic wave shielding housing is heated by a heater embedded inside the electromagnetic wave shielding housing, The substrate processing apparatus is characterized in that the electromagnetic wave shielding housing is electrically grounded.

2. 2. The substrate processing apparatus of claim 1, further comprising a thermal insulating spacer for thermally insulating the electromagnetic wave shielding housing from an upper surface of the chamber.

3. 3. The substrate processing apparatus according to claim 2, wherein the heat insulating spacer is made of a ceramic material and has a ring shape.

4. The electromagnetic wave shielding device further includes a cooling housing disposed at a distance from the cooling housing so as to surround the cooling housing, 2. The substrate processing apparatus according to claim 1, wherein the cooling housing is cooled by a refrigerant.

5. 2. The substrate processing apparatus of claim 1, wherein the temperature of the electromagnetic wave shielding housing is between 200 and 600 degrees Celsius.

6. a funnel-shaped lower dome covering a lower surface of the chamber and made of a transparent dielectric material; a concentric lamp heater disposed on the lower surface of the lower dome; a ring-shaped upper liner formed of a dielectric material and disposed inside the chamber and surrounding a lower edge of the upper dome; a ring-shaped lower liner formed of a dielectric material and disposed inside the chamber and surrounding an inner peripheral surface of an upper edge of the lower dome; 2. The substrate processing apparatus of claim 1, further comprising: a reflector disposed on a lower surface of the concentric lamp heater.

7. A chamber having a sidewall; a susceptor for mounting a substrate inside the chamber; an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material; an antenna disposed on the upper dome to form an inductively coupled plasma; an electromagnetic wave shielding housing arranged to surround the antenna; A substrate processing apparatus comprising: the electromagnetic wave shielding housing is heated by a heater; The antenna includes two one-turn unit antennas; The two one-turn unit antennas are arranged so as to overlap each other on the upper and lower surfaces, The two one-turn unit antennas are connected in parallel to an RF power source; The substrate processing apparatus is characterized in that the width direction of the one-turn unit antenna is set up vertically.

8. The one-turn antenna is in the form of a stripline having a width greater than a thickness, The width direction of the one-turn unit antenna is vertically set up, 8. The substrate processing apparatus according to claim 7, wherein a ratio W / t of the width W to the thickness t is 10 or more.

9. A chamber having a sidewall; a susceptor for mounting a substrate inside the chamber; an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material; an antenna disposed on the upper dome to form an inductively coupled plasma; an electromagnetic wave shielding housing arranged to surround the antenna; A substrate processing apparatus comprising: the electromagnetic wave shielding housing is heated by a heater embedded inside the electromagnetic wave shielding housing, a clamp in contact with the upper surface of the chamber and positioned over the edge of the upper dome; the electromagnetic shield housing engages with the clamp; The substrate processing apparatus is characterized in that the inner diameter of the clamp is the same as the diameter of the electromagnetic wave shielding housing.

10. The electromagnetic wave shielding device further includes a cooling housing arranged at a distance from the housing so as to surround the housing, The substrate processing apparatus according to claim 9 , wherein the cooling housing is cooled by a refrigerant and attached to the clamp.

11. A substrate processing apparatus as described in Claim 9, further comprising an insulating spacer thermally insulated from the electromagnetic wave shielding housing and the clamp arranged on the upper surface of the chamber.

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