Dielectric film, capacitor including same, and method of manufacturing same

Abstract

The present invention provides a method for manufacturing a dielectric film, comprising the steps of: supplying a first source gas; supplying a first purge gas; supplying a first reactive gas; and supplying a second purge gas, wherein the step of supplying the first source gas comprises supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition equipment, and the step of supplying the first reactive gas comprises supplying a compound selected from the group consisting of O3 and HO into the vacuum deposition equipment.

Description

[Technical field]

[0001] The present invention relates to a dielectric film, and more particularly to a dielectric film that can be applied to a capacitor. [Background technology]

[0002] A capacitor has a structure in which a dielectric film is provided between two electrodes, and the characteristics of the capacitor are largely determined by the dielectric properties of the dielectric film.

[0003] In general, the dielectric properties of a dielectric film used in a capacitor can be evaluated by the thickness and leakage current density of the dielectric film.

[0004] It is preferable to form the dielectric film thin since the thinner the dielectric film, the greater the capacitance per unit area.

[0005] Also, since the power consumption of the capacitor increases as the leakage current density increases, it is preferable to reduce the leakage current density. Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a dielectric film capable of reducing leakage current density while being formed to a thin thickness, a method for manufacturing the same, and a capacitor including the dielectric film and a method for manufacturing the same. [Means for solving the problem]

[0007] In order to achieve the above object, the present invention provides a method for manufacturing a dielectric film, comprising the steps of: supplying a first source gas; supplying a first purge gas; supplying a first reactive gas; and supplying a second purge gas, wherein the step of supplying the first source gas comprises supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition equipment, and the step of supplying the first reactive gas comprises supplying a compound selected from the group consisting of O3 and HO into the vacuum deposition equipment.

[0008] The step of supplying the first source gas may include the step of supplying a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a second compound different from the first compound and containing another second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0009] The first metal may be selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and the second metal may be selected from the group consisting of hafnium (Hf), and zirconium (Zr).

[0010] The present invention also provides a method for manufacturing a dielectric film, the method comprising the steps of: supplying a first source gas; supplying a first purge gas; supplying a second source gas; supplying a second purge gas; supplying a first reactive gas; and supplying a third purge gas, wherein the step of supplying the first source gas comprises supplying a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition equipment; the step of supplying the second source gas comprises supplying a second compound containing a second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into the vacuum deposition equipment; and the step of supplying the first reactive gas comprises supplying a compound selected from the group consisting of O3 and HO into the vacuum deposition equipment.

[0011] The first metal may be selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and the second metal may be selected from the group consisting of hafnium (Hf), and zirconium (Zr).

[0012] The present invention also provides a method for manufacturing a semiconductor device, the method comprising the steps of: supplying a first source gas; supplying a first purge gas; supplying a first reactive gas; supplying a second purge gas; supplying a second source gas; supplying a third purge gas; supplying a second reactive gas; and supplying a fourth purge gas, the step of supplying the first source gas includes providing a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) in a vacuum deposition apparatus. supplying a second source gas into the vacuum deposition equipment, the supplying of the second source gas being different from the first source gas and including a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr); and the supplying of the first reactive gas and the supplying of the second reactive gas being different from the first source gas and including a compound selected from the group consisting of O3 and HO into the vacuum deposition equipment.

[0013] The step of supplying the first source gas includes the steps of supplying a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a second compound different from the first compound and containing another second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), The step of supplying the second source gas may include the step of supplying a third compound containing a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a fourth compound different from the third compound and containing another fourth metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0014] The present invention also provides a method for manufacturing a capacitor having a dielectric layer between a first electrode and a second electrode, the dielectric layer being manufactured by the above-mentioned method.

[0015] The present invention also provides a dielectric film made of a composite metal oxide containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another second metal.

[0016] The first metal may be selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and the second metal may be selected from the group consisting of hafnium (Hf), and zirconium (Zr).

[0017] The present invention also includes a first dielectric film; and a second dielectric film formed on the first dielectric film and made of a material different from that of the first dielectric film, the first dielectric film being made of an oxide of a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), or a mixture of the first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another metal. The second dielectric film is made of a composite metal oxide containing one second metal, and the second dielectric film is made of an oxide of a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), or a composite metal oxide containing a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another fourth metal.

[0018] The present invention also provides a capacitor comprising a first electrode, a second electrode, and a dielectric film provided between the first electrode and the second electrode, the dielectric film being the above-mentioned dielectric film. Effect of the Invention

[0019] According to one embodiment of the present invention, a dielectric film is formed of an oxide of at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) using an atomic layer deposition method, which can reduce the thickness of the dielectric film and improve the crystallization of the dielectric film, thereby reducing leakage current density when the dielectric film is applied to a capacitor. [Brief description of the drawings]

[0020] [Figure 1] 1 illustrates a method of forming a dielectric film according to an embodiment of the present invention. [Diagram 2]1 illustrates a method of forming a dielectric film according to another embodiment of the present invention. [Diagram 3] 1 illustrates a method of forming a dielectric film according to still another embodiment of the present invention. [Figure 4] 1 is a schematic cross-sectional view of a capacitor according to an embodiment of the present invention; [Diagram 5] 11 is a schematic cross-sectional view of a capacitor according to another embodiment of the present invention. [Figure 6] 1 is a schematic exploded perspective view of a vacuum deposition apparatus according to an embodiment of the present invention; [Figure 7] 7 is a schematic side cross-sectional view of a vacuum deposition apparatus according to an embodiment of the present invention taken along line II in FIG. 6. [Figure 8] 2 is a schematic plan view of a support in a vacuum deposition apparatus according to an embodiment of the present invention; [Figure 9] 7 is a schematic side cross-sectional view of a vacuum deposition apparatus according to another embodiment of the present invention taken along line II in FIG. 6. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] The advantages and features of the present invention, and the method of achieving them, will become clear from the detailed description of the embodiments with accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various different forms, and the embodiments are provided to fully disclose the present invention and fully inform those skilled in the art of the invention, and the present invention is defined only by the scope of the claims.

[0022] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative only, and the present invention is not limited to the illustrated matters. The same reference symbols indicate the same components throughout the specification. Furthermore, in explaining the present invention, if it is determined that a detailed description of related known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. When the words "include", "have", "be" and the like are used in this specification, other parts may be added unless "only" is used. When a component is expressed in the singular, it includes the plural unless otherwise explicitly stated.

[0023] When interpreting elements, they are interpreted as including a margin of error even if there is no explicit statement to the contrary.

[0024] In describing a positional relationship, for example, when the positional relationship between two parts is described using "on," "at the top," "below," "next to," etc., one or more other parts may be located between the two parts unless "immediately" or "directly" is used.

[0025] In the case of explaining a temporal relationship, for example, when the temporal sequence is explained using "after", "following", "next to", "before", etc., it can also include cases where the sequence is not consecutive, since "immediately" or "directly" is not used.

[0026] Although the terms "first", "second" and the like are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, the first component referred to below may be the second component within the technical concept of the present invention.

[0027] The respective features of the various embodiments of the present invention may be partially or fully combined or combined with each other, and various technical interlocking and driving mechanisms may be possible, and each embodiment may be implemented independently of each other or may be implemented together in a linked relationship.

[0028] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

[0029] FIG. 1 illustrates a method of forming a dielectric film according to an embodiment of the present invention.

[0030] The dielectric film according to an embodiment of the present invention may be formed through atomic layer deposition (ALD) using a vacuum deposition device.

[0031] As can be seen in FIG. 1, a method for forming a dielectric layer in accordance with an embodiment of the present invention includes supplying a first source gas, supplying a first purge gas, supplying a first reaction gas, and supplying a second purge gas.

[0032] The step of supplying the first source gas may include disposing a substrate in the vacuum deposition equipment and supplying the first source gas into the vacuum deposition equipment.

[0033] The first source gas may include a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0034] At this time, the compounds containing lanthanum (La) are La(NPMP)3(tris(1-n-propoxy-2-methyl-2-propoxy)lanthanum(III)), La(NPEB)3(tris(2-ethyl-1-n-propoxy-2-butoxy)lanthanum(III)), La(OC2H5)3(lanthanum(III)) ethoxide), La(EDMDD)3(tris(6-ethyl-2,2-dimethyl-3,5-decanedionato)lanthanum(III)), La(DPM)3(tris(dipivaloylmethana te)lanthanum(III)), La(TMHD)3(tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)), La(acac)3(lanthanum(III) The lanthanum oxide may be selected from the group consisting of, but is not necessarily limited to, La(EtCp)3 (tris(ethylcyclopentadienyl)lanthanum(III)).

[0035] The compound containing cerium (Ce) is cerium nitrate (Ce(NO3) 3·6 H2O), Cerium Acetate (Ce(O2C2H3) 3· xHO) and cerium chloride (CeCl 3· xH2O), but is not necessarily limited thereto.

[0036] The strontium (Sr)-containing compounds are Sr(thd)2THF2, Sr(NO3)2, and Sr(CH3COO). 2· nH2O (n is a natural number between 5 and 9), but is not necessarily limited thereto.

[0037] The gadolinium (Gd)-containing compound may be selected from the group consisting of, but is not necessarily limited to, Gd(thd)3 or Cp(CH3)3Gd.

[0038] The hafnium (Hf)-containing compound may be selected from the group consisting of HfCl4, Hf(OC2H5)4, Hf(N(C2H5)2)4, Hf(N(CH3)2)4, and Hf(dimethylamine)4, but is not necessarily limited thereto.

[0039] The zirconium (Zr)-containing compound may be selected from the group consisting of Zr[NC2H5CH3]4, Zr[N(CH3)2]4, Zr[OC(CH3)2CH2OCH3]4, Zr[OC(CH3)3]4, ZrCl4, and ZrI4, but is not necessarily limited thereto.

[0040] Alternatively, the first source gas may include a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a second compound different from the first compound containing a second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0041] For example, the first compound may contain a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and the second compound may contain a second metal selected from the group consisting of hafnium (Hf) and zirconium (Zr).

[0042] Alternatively, the first compound may contain any one of the first metals selected from the group consisting of cerium (Ce) and gadolinium (Gd), and the second compound may contain another second metal selected from the group consisting of lanthanum (La), strontium (Sr), hafnium (Hf), and zirconium (Zr).

[0043] The step of supplying the first purge gas may be performed while stopping the supply of the first source gas. The first purge gas may be any of various purge gases known in the art, for example, an inert gas such as argon, and the first source gas remaining in the vacuum deposition equipment is purged by supplying the first purge gas.

[0044] The supplying of the first reaction gas may be performed while stopping the supply of the first purge gas.

[0045] The first reactant gas may be selected from the group consisting of O3 and H2O. The first reactant gas may consist of O3, may consist of H2O, or may consist of a mixture of O3 and H2O.

[0046] The step of supplying the second purge gas may be performed while stopping the supply of the first reaction gas. The second purge gas may be any of various purge gases known in the art, and the first reaction gas remaining in the vacuum deposition equipment is purged by supplying the second purge gas.

[0047] Thus, according to one embodiment of the present invention, a cycle is completed by a combination of the steps of supplying the first source gas, supplying the first purge gas, supplying the first reaction gas, and supplying the second purge gas, and a dielectric film can be formed by repeatedly performing this cycle.

[0048] When the first source gas is a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), the formed dielectric film may be an oxide of the first metal, for example, an oxide of the first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0049] When the first source gas includes a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a second compound different from the first compound and containing a second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), the formed dielectric film may be made of a composite metal oxide containing the first metal contained in the first compound and the second metal contained in the second compound.

[0050] The dielectric film manufactured according to the embodiment of the present invention has improved crystallization of the thin film, and when applied to a capacitor, leakage current problems can be prevented.

[0051] FIG. 2 illustrates a method of forming a dielectric film according to another embodiment of the present invention.

[0052] As can be seen in FIG. 2, a method of forming a dielectric film according to another embodiment of the present invention includes a step of supplying a first source gas, a step of supplying a first purge gas, a step of supplying a second source gas, a step of supplying a second purge gas, a step of supplying a first reaction gas, and a step of supplying a third purge gas.

[0053] The step of supplying the first source gas may include placing a substrate in a vacuum deposition equipment and supplying the first source gas into the vacuum deposition equipment.

[0054] The first source gas may include a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0055] The step of supplying the first purge gas may be performed while stopping the supply of the first source gas. The first purge gas may be any of various purge gases known in the art, and the first source gas remaining in the vacuum deposition equipment is purged by supplying the first purge gas.

[0056] The step of supplying the second source gas may be performed while stopping the supply of the first purge gas.

[0057] The second source gas may include a second compound that is different from the first compound and contains another second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0058] The first compound may contain any one first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and the second compound may contain another second metal selected from the group consisting of hafnium (Hf) and zirconium (Zr).

[0059] Alternatively, the first compound may contain any one of the first metals selected from the group consisting of cerium (Ce) and gadolinium (Gd), and the second compound may contain another second metal selected from the group consisting of lanthanum (La), strontium (Sr), hafnium (Hf), and zirconium (Zr).

[0060] The step of supplying the second purge gas may be performed while stopping the supply of the second source gas. The second purge gas may be any of various purge gases known in the art, and the second source gas remaining in the vacuum deposition equipment is purged by supplying the second purge gas.

[0061] The supply of the first reaction gas may be performed while stopping the supply of the second purge gas.

[0062] The first reactive gas may consist of O3, may consist of H2O, or may consist of a mixture of O3 and H2O.

[0063] The step of supplying the third purge gas may be performed while stopping the supply of the first reaction gas. The third purge gas may be any of various purge gases known in the art, and the first reaction gas remaining in the vacuum deposition equipment is purged by supplying the third purge gas.

[0064] Thus, according to another embodiment of the present invention, one cycle is completed by a combination of the steps of supplying the first source gas, supplying the first purge gas, supplying the second source gas, supplying the second purge gas, supplying the first reaction gas, and supplying the third purge gas, and a dielectric film can be formed by repeatedly performing this one cycle.

[0065] The dielectric film formed according to this other embodiment of the present invention may be made of a composite metal oxide including any one of the first metals contained in the first compound and any other one of the second metals contained in the second compound.

[0066] FIG. 3 illustrates a method of forming a dielectric film according to still another embodiment of the present invention.

[0067] As can be seen in FIG. 3, a method of forming a dielectric film according to yet another embodiment of the present invention includes a step of supplying a first source gas, a step of supplying a first purge gas, a step of supplying a first reactive gas, a step of supplying a second purge gas, a step of supplying a second source gas, a step of supplying a third purge gas, a step of supplying a second reactive gas, and a step of supplying a fourth purge gas.

[0068] The step of supplying the first source gas may include placing a substrate in a vacuum deposition equipment and supplying the first source gas into the vacuum deposition equipment.

[0069] The first source gas may include a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0070] Alternatively, the first source gas may include a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a second compound different from the first compound containing a second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0071] The first compound may contain any one first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and the second compound may contain another second metal selected from the group consisting of hafnium (Hf) and zirconium (Zr).

[0072] Alternatively, the first compound may contain any one of the first metals selected from the group consisting of cerium (Ce) and gadolinium (Gd), and the second compound may contain another second metal selected from the group consisting of lanthanum (La), strontium (Sr), hafnium (Hf), and zirconium (Zr).

[0073] The step of supplying the first purge gas may be performed while stopping the supply of the first source gas. The first purge gas may be any of various purge gases known in the art, and the first source gas remaining in the vacuum deposition equipment is purged by supplying the first purge gas.

[0074] The supplying of the first reaction gas may be performed while stopping the supply of the first purge gas.

[0075] The first reactive gas may consist of O3, may consist of H2O, or may consist of a mixture of O3 and H2O.

[0076] The step of supplying the second purge gas may be performed while stopping the supply of the first reaction gas. The second purge gas may be any of various purge gases known in the art, and the first reaction gas remaining in the vacuum deposition equipment is purged by supplying the second purge gas.

[0077] The step of supplying the second source gas may be performed while stopping the supply of the second purge gas.

[0078] The second source gas is composed of a different compound than the first source gas.

[0079] The second source gas may include a third compound containing a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0080] The third compound may be made of a different substance from the first compound. The third compound may be made of a different substance from the first compound and the second compound.

[0081] Alternatively, the second source gas may include a third compound containing a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a fourth compound different from the third compound and containing another fourth metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

[0082] The third compound may be made of a different substance from the first compound. The third compound may be made of a different substance from the first compound and the second compound.

[0083] The fourth compound may be made of a different substance from the first compound. The fourth compound may be made of a different substance from the first compound and the second compound.

[0084] The third compound may contain any one third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and the fourth compound may contain another fourth metal selected from the group consisting of hafnium (Hf) and zirconium (Zr).

[0085] Alternatively, the third compound may contain any one third metal selected from the group consisting of cerium (Ce) and gadolinium (Gd), and the fourth compound may contain another fourth metal selected from the group consisting of lanthanum (La), strontium (Sr), hafnium (Hf), and zirconium (Zr).

[0086] The step of supplying the third purge gas may be performed while stopping the supply of the second source gas. The third purge gas may be any of various purge gases known in the art, and the supply of the third purge gas purges the second source gas remaining in the vacuum deposition equipment.

[0087] The supply of the second reaction gas may be performed while stopping the supply of the third purge gas.

[0088] The second reactive gas may consist of O3, may consist of H2O, or may consist of a mixture of O3 and H2O.

[0089] The second reaction gas may be composed of the same material as the first reaction gas, but is not necessarily limited thereto.

[0090] The step of supplying the fourth purge gas may be performed while stopping the supply of the second reaction gas. The fourth purge gas may be any of various purge gases known in the art, and the supply of the fourth purge gas purges the second reaction gas remaining in the vacuum deposition equipment.

[0091] Thus, according to yet another embodiment of the present invention, one cycle is completed by combining the steps of supplying the first source gas, supplying the first purge gas, supplying the first reactive gas, supplying the second purge gas, supplying the second source gas, supplying the third purge gas, supplying the second reactive gas, and supplying the fourth purge gas, and a dielectric film can be formed by repeatedly performing this one cycle.

[0092] The dielectric film formed according to yet another embodiment of the present invention may include a first dielectric film formed by reacting the first source gas with the first reactive gas, and a second dielectric film formed on the first dielectric film and formed by reacting the second source gas with the second reactive gas, and may have a structure in which the first dielectric film and the second dielectric film are repeatedly stacked.

[0093] The first dielectric film may be made of an oxide of any one of the first metals contained in the first compound, or may be made of an oxide of a composite metal including any one of the first metals contained in the first compound and another one of the second metals contained in the second compound.

[0094] The second dielectric film may be made of an oxide of any one of the third metals contained in the third compound, or may be made of an oxide of a composite metal including any one of the third metals contained in the third compound and another fourth metal contained in the fourth compound.

[0095] FIG. 4 is a schematic cross-sectional view of a capacitor according to an embodiment of the present invention.

[0096] As can be seen in FIG. 4, a capacitor according to one embodiment of the present invention comprises a first electrode 100, a dielectric film 200 and a second electrode 300.

[0097] The first electrode 100 and the second electrode 300 may each be made of a conductive material such as a metal, a conductive metal oxide, a conductive metal nitride, or a conductive silicon compound, etc. The first electrode 100 and the second electrode 300 may be made of the same material or different materials.

[0098] The dielectric layer 200 is disposed between the first electrode 100 and the second electrode 300 .

[0099] The dielectric film 200 may be formed by the method shown in Fig. 1 or 2. Accordingly, the dielectric film 200 may be made of an oxide of a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr). Alternatively, the dielectric film 200 may be made of an oxide of a composite metal including a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another second metal.

[0100] For example, the composite metal may contain a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd), and a second metal selected from the group consisting of hafnium (Hf) and zirconium (Zr).

[0101] Alternatively, the composite metal may contain a first metal selected from the group consisting of cerium (Ce) and gadolinium (Gd), and a second metal selected from the group consisting of lanthanum (La), strontium (Sr), hafnium (Hf), and zirconium (Zr).

[0102] FIG. 5 is a schematic cross-sectional view of a capacitor according to another embodiment of the present invention.

[0103] As can be seen in FIG. 5, a capacitor according to another embodiment of the present invention comprises a first electrode 100, a dielectric film 200 and a second electrode 300. As shown in FIG.

[0104] The first electrode 100 and the second electrode 300 are as described above.

[0105] The dielectric layer 200 is provided between the first electrode 100 and the second electrode 300 and may be formed by the method shown in FIG.

[0106] The dielectric film 200 includes a first dielectric film 210 and a second dielectric film 220 .

[0107] The first dielectric film 210 may be made of an oxide of a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), or may be made of an oxide of a composite metal including a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another second metal.

[0108] The second dielectric layer 220 is disposed on the first dielectric layer 210 and is made of a different material than the first dielectric layer 210 .

[0109] The second dielectric layer 220 may be an oxide of a third metal, which may be any one of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), the third metal being different from the first metal, or the third metal being different from the first metal and the second metal.

[0110] Alternatively, the second dielectric film 220 may be made of a composite metal oxide including a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another fourth metal. The third metal is different from the first metal. Or the third metal is different from the first metal and the second metal. The fourth metal is different from the first metal and the third metal. Or the fourth metal is different from the first metal, the second metal, and the third metal.

[0111] FIG. 6 is a schematic exploded perspective view of a vacuum deposition equipment according to one embodiment of the present invention, FIG. 7 is a schematic side cross-sectional view of a vacuum deposition equipment according to one embodiment of the present invention based on line II of FIG. 6, FIG. 8 is a schematic plan view of a support part in a vacuum deposition equipment according to one embodiment of the present invention, and FIG. 9 is a schematic side cross-sectional view of a vacuum deposition equipment according to another embodiment of the present invention based on line II of FIG. 6.

[0112] 6 to 9, a vacuum deposition apparatus according to an embodiment of the present invention performs a process on a substrate S, specifically, for depositing the dielectric films according to the various embodiments described above. The substrate S can be variously changed to a silicon substrate, a glass substrate, a metal substrate, or the like.

[0113] The vacuum deposition equipment 1 according to an embodiment of the present invention may include a chamber 2 , a support unit 3 , a gas injection unit 4 , a gas supply unit 5 , and an exhaust unit 6 .

[0114] The chamber 2 provides a processing space 100. In the processing space 100, a dielectric film deposition process may be performed on the substrate S. The processing space 100 may include a first processing region 110, a second processing region 120, and a third processing region 130 between the first processing region 110 and the second processing region 120 within the chamber 2. The support 3 and the gas injection unit 4 may be installed in the chamber 2.

[0115] The support 3 may be disposed inside the chamber 2. The support 3 may support one substrate S or a plurality of substrates S1, S2, S3, and S4. When the processing space 100 includes the first processing region 110, the second processing region 120, and the third processing region 130, a portion of the support 3 may be located in the first processing region 110, another portion of the support 3 may be located in the second processing region 120, and yet another portion of the support 3 may be located in the third processing region 130. When a plurality of substrates S1, S2, S3, and S4 are supported by the support 3, some of the substrates S1, S2, S3, and S4 may be located in the first processing region 110, and the other portion of the substrates S1, S2, S3, and S4 may be located in the second processing region 120. In this case, a dielectric film deposition process may be performed simultaneously on each of the substrates S1, S2, S3, and S4.

[0116] The support 3 may rotate around a support shaft 30 of the support 3 in the chamber 2. The rotation of the support 3 allows the substrate S supported by the support 3 to move to different processing regions in the chamber 2. When the support 3 rotates, some of the substrates S1, S2, S3, and S4 may move from the first processing region 110 through the third processing region 310 to the second processing region 120, and move from the second processing region 120 through the third processing region 130 to the first processing region 110 again. The rotation of the support 3 may be repeated between stops and rotations, or may be continuous without stopping. Accordingly, the substrate S supported by the support 3 may move between the different processing regions while repeating stops and moves, or may be continuous without stopping.

[0117] The gas injection unit 4 injects gas toward the support 3. The gas injection unit 4 may be connected to a gas supply unit 5. Accordingly, the gas injection unit 4 may inject the gas supplied from the gas supply unit 5 toward the support 3. The gas injection unit 4 may be disposed to face the support 3. The processing space 100 may be disposed between the gas injection unit 4 and the support 3. The gas injection unit 4 may be coupled to a chamber lid 20. The chamber lid 20 may be coupled to the chamber 2 to cover an upper portion of the chamber 2.

[0118] The gas injection section 4 may include a first injection unit 41 and a second injection unit 42 .

[0119] The first injection unit 41 injects a first gas into the first processing region 110. The first processing region 110 may correspond to a part of the processing space 100. The first injection unit 41 may be disposed above and spaced apart from the support 3. In this case, the first processing region 110 may be a region between the first injection unit 41 and the support 3.

[0120] The first injection unit 41 may inject a source gas and a purge gas into the first processing region 110 .

[0121] Accordingly, a processing process using the source gas may be performed on the substrate S located in the first processing region 110. When the source gas is a source gas that reacts with a reaction gas to deposit a dielectric layer, the processing process may be a process in which the source gas is adsorbed onto the surface of the substrate S. Also, the purge gas may purge the source gas that is not adsorbed onto the substrate S in the first processing region 110. When some substrates S1 and S2 of the plurality of substrates S1, S2, S3, and S4 supported by the support 3 are located in the first processing region 110, the source gas and the purge gas sprayed by the first spray unit 41 may be sprayed onto the substrates S1 and S2 in order.

[0122] The source gas and the purge gas may be the first source gas and the first purge gas described above with reference to FIG.

[0123] Alternatively, the source gas and the purge gas may be the first source gas and the first purge gas, and the second source gas and the second purge gas, as shown in Fig. 2 or 3. In this case, the first source gas, the first purge gas, the second source gas, and the second purge gas may be injected in sequence from the first injection unit 41.

[0124] The second injection unit 42 injects a second gas into the second processing region 120. The second processing region 120 may correspond to a part of the processing space 100. The second injection unit 42 may be disposed above and spaced apart from the support 3. In this case, the second processing region 120 may be a region between the second injection unit 42 and the support 3.

[0125] The second injection unit 42 may inject a reaction gas and a purge gas into the second processing region 120 .

[0126] The reaction gas and the purge gas may be the first reaction gas and the second purge gas described above with reference to FIG.

[0127] Alternatively, the reaction gas and the purge gas may be the first reaction gas and the third purge gas of FIG.

[0128] Alternatively, the reaction gas and the purge gas may be the first reaction gas and the second purge gas, and the second reaction gas and the fourth purge gas, as shown in Fig. 3. In this case, the first reaction gas, the second purge gas, the second reaction gas, and the fourth purge gas may be injected in sequence from the second injection unit 42.

[0129] Accordingly, a processing process using the second gas may be performed on the substrate S located in the second processing region 120. When the second gas reacts with the first gas to form a thin film, the processing process may be a process in which the first gas adsorbed on the substrate S reacts with the second gas to form a dielectric film on the surface of the substrate S. Also, the purge gas may additionally purge the first gas remaining on the surface of the substrate S in the second processing region 120, or may purge the second gas that has not reacted with the first gas. When some substrates S1 and S2 of the plurality of substrates S1, S2, S3, and S4 supported by the support 3 are located in the first processing region 110, other substrates S3 and S4 may be located in the second processing region 120.

[0130] The gas injection section 4 may further include a third injection unit 43 .

[0131] The third injection unit 43 injects a third gas into the third processing region 130. The third processing region 130 may correspond to a part of the processing space 100. The third processing region 130 may be a region between the first processing region 110 and the second processing region 120. The third injection unit 43 may be disposed spaced apart above the support 3. The third injection unit 43 may be disposed between the first injection unit 41 and the second injection unit 42.

[0132] The third injection unit 43 may inject a partition gas into the third processing region 130. The partition gas may be an inert gas such as argon (Ar). By injecting the partition gas into the third processing region 130, the first processing region 110 and the second processing region 120 may be spatially separated so that gases are not mixed therebetween. The third injection unit 43 may be connected to the gas supply unit 5. When some of the substrates S1, S2 among the substrates S1, S2, S3, and S4 supported by the support unit 3 are located in the first processing region 110 and other substrates S3 and S4 are located in the second processing region 120, the third injection unit 43 may inject the partition gas into a space between the substrates S1, S2 located in the first processing region 110 and the substrates S3 and S4 located in the second processing region 120.

[0133] The gas supply unit 5 supplies gas to the gas injection unit 4. The gas supply unit 5 can supply the first and second source gases, the first and second reaction gases, and the first to fourth purge gases to the gas injection unit 4. When the gas injection unit 4 injects the partition gas, the gas supply unit 5 can additionally supply the partition gas to the gas injection unit 4. In this case, the gas supply unit 5 can supply the partition gas to the third injection unit 43 intermittently or continuously while a processing process is being performed on the substrate S.

[0134] The exhaust unit 6 exhausts gas from the processing space 100. The exhaust unit 6 may be coupled to the chamber 2 so as to communicate with the interior of the chamber 2.

[0135] The exhaust unit 6 may include a first exhaust port 61 , a second exhaust port 62 , a first exhaust member 63 , a second exhaust member 64 , and an integration member 65 .

[0136] The first exhaust port 61 and the second exhaust port 62 may be a plurality of exhaust ports formed in the chamber 2. The first exhaust port 61 may be formed in the chamber 2 to evacuate the first processing region 110. The second exhaust port 62 may be formed in the chamber 2 to evacuate the second processing region 120.

[0137] The first exhaust member 63 may be provided to exhaust the first processing region 110 through the first exhaust port 61. The gas injected into the first processing region 110 may be exhausted to the outside of the chamber 2 through the first exhaust port 61 and the first exhaust member 63. One side of the first exhaust member 63 may be coupled to the first exhaust port 61 formed in the chamber 2, and the other side may be coupled to the integration member 65.

[0138] The second exhaust member 64 may be provided to exhaust the second processing region 120 through the second exhaust port 62. The gas injected into the second processing region 120 may be exhausted to the outside of the chamber 2 through the second exhaust port 62 and the second exhaust member 64. One side of the second exhaust member 64 may be coupled to the second exhaust port 62 formed in the chamber 2, and the other side may be coupled to the integration member 65.

[0139] The integration member 65 is connected to each of the first exhaust member 63 and the second exhaust member 64. The gas exhausted through the first exhaust member 63 and the gas exhausted through the second exhaust member 64 may be exhausted together after joining at the integration member 65. The integration member 65, the second exhaust member 64, and the first exhaust member 63 may each be embodied as a hose, a pipe, or the like.

[0140] When the source gas is injected into the first processing region 110 and the reaction gas is injected into the second processing region 120, unreacted gas among the source gas can be exhausted to the chamber 2 through the first exhaust member 63, and unreacted gas among the reaction gas can be exhausted to the chamber 2 through the second exhaust member 64.

[0141] Although the embodiments of the present invention have been described in detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications can be made within the scope of the technical idea of ​​the present invention. Therefore, the embodiments disclosed in the present invention are for illustration purposes, not for limiting the technical idea of ​​the present invention, and the scope of the technical idea of ​​the present invention is not limited by these embodiments. Therefore, the embodiments described above should be understood as illustrative and not restrictive in all respects. The scope of protection of the present invention should be interpreted by the scope of the claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

Claims

1. providing a first source gas; providing a first purge gas; providing a first reactant gas; and providing a second purge gas; The step of supplying the first source gas includes supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition equipment; The step of supplying the first reaction gas into the vacuum deposition equipment includes supplying O ３ and H ２ 1. A method for producing a dielectric film, comprising the step of providing a compound selected from the group consisting of O.

2. 2. The method of claim 1, wherein the supplying of the first source gas comprises the steps of: supplying a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr); and supplying a second compound different from the first compound containing another second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

3. the first metal is selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd); 3. The method of claim 2, wherein the second metal is selected from the group consisting of hafnium (Hf) and zirconium (Zr).

4. providing a first source gas; providing a first purge gas; providing a second source gas; providing a second purge gas; providing a first reactant gas; and providing a third purge gas; The step of supplying the first source gas includes supplying a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition apparatus; The step of supplying the second source gas includes supplying a second compound containing a second metal different from the first metal, the second metal being selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into the vacuum deposition equipment; The step of supplying the first reaction gas into the vacuum deposition equipment includes supplying O ３ and H ２ 1. A method for producing a dielectric film, comprising the step of providing a compound selected from the group consisting of O.

5. the first metal is selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd); 5. The method of claim 4, wherein the second metal is selected from the group consisting of hafnium (Hf) and zirconium (Zr).

6. providing a first source gas; providing a first purge gas; providing a first reactant gas; providing a second purge gas; providing a second source gas; supplying a third purge gas; providing a second reactant gas; and providing a fourth purge gas; The step of supplying the first source gas includes supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition equipment; The step of supplying the second source gas includes supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into the vacuum deposition equipment, which is different from the first source gas; The steps of supplying the first reaction gas and the second reaction gas are performed by adding O ３ and H ２ 1. A method for producing a dielectric film, comprising the step of providing a compound selected from the group consisting of O.

7. the step of supplying the first source gas includes the steps of supplying a first compound containing a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), and a second compound different from the first compound and containing another second metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr); 7. The method of claim 6, wherein the supplying of the second source gas comprises the steps of: supplying a third compound containing a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr); and a fourth compound different from the third compound and containing another fourth metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr).

8. 1. A method for manufacturing a capacitor having a dielectric film between a first electrode and a second electrode, comprising: The dielectric film is manufactured by the method according to any one of claims 1 to 7.

9. A dielectric film comprising an oxide of a composite metal including a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another second metal.

10. the first metal is selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), and gadolinium (Gd); 10. The dielectric film of claim 9, wherein the second metal is selected from the group consisting of hafnium (Hf) and zirconium (Zr).

11. A first dielectric film; and a second dielectric film formed on the first dielectric film and made of a different material than the first dielectric film; The first dielectric film is made of an oxide of a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), or is made of an oxide of a composite metal including a first metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another second metal; The second dielectric film is a dielectric film made of an oxide of a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr), or made of an oxide of a composite metal containing a third metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) and another fourth metal.

12. a first electrode and a second electrode; and a dielectric film provided between the first electrode and the second electrode; A capacitor, wherein the dielectric film is the dielectric film according to any one of claims 9 to 11.

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