Pulsed laser deposition apparatus and method

Abstract

The present application discloses a pulsed laser deposition apparatus and method, in which a laser scanning sputtering component in the apparatus includes a base, an adjustment device located on the base, a plurality of second brackets located on the adjustment device and extending along a third direction, and a first bracket located on the plurality of second brackets, where the adjustment device adjusts the movement of the second bracket and the first bracket in a first direction and / or a second direction, and the first direction, the second direction and the third direction are perpendicular to each other. According to the pulsed laser deposition apparatus and method of the present application, the laser scanning sputtering component realizes precise control of the irradiation time of the laser beam on the surface of the target, which not only improves the speed of film deposition but also improves the performance of single component films and combination films.

Description

[Technical field]

[0001] This application claims priority to a Chinese invention application filed on February 21, 2022, with application number 202210155728.6, entitled "Method and apparatus for preparing combination film", filed on February 21, 2022, with application number 202210155960.X, entitled "Method and apparatus for preparing combination film", filed on July 29, 2022, with application number 202210906042.6, entitled "Laser scanning sputtering part", and the specification, claims, attached drawings and abstract of the above Chinese invention application are hereby incorporated by reference in their entirety.

[0002] The present invention relates to the field of film deposition, and more particularly to pulsed laser deposition apparatus and methods. [Background technology]

[0003] Microwave communication devices such as antennas, resonators, filters, and delay lines made of superconducting films have a high sensitivity that is incomparable to that of ordinary materials (such as gold and silver), and therefore are highly valued by the military forces of various countries, becoming a key technology in future electronic countermeasures and the "future" of next-generation communication technology. Superconducting films also show great market potential in large particle accelerators.

[0004] Pulsed Laser Deposition (PLD) technology is an important technique for producing superconducting films. Through the interaction of laser with the target material, plasma is generated in the normal direction of the target material, and the plasma nucleates on the surface of the substrate and grows to form a film.

[0005] In the pulsed laser deposition process, combinatorial films are films composed of different components. By selecting the precursor materials, films with various functions can be obtained, such as superconducting, ferroelectric, dielectric and other materials with abundant phase changes. Due to the rich phase diagram of the material and the broad application prospects, it has become the focus of attention in the industry. In the prior art, combinatorial films are often made by adopting targets made of different materials, bombarding the corresponding targets with excimer laser, sputtering the corresponding precursor components, and depositing the precursor components on the substrate using combinatorial laser molecular beam epitaxy technology. The combinatorial films are formed on the substrate by sequentially and periodically sputtering the targets of different materials.

[0006] In the prior art, when depositing a combination film, two methods are usually adopted: one is to realize the deposition of different components by replacing the target; the other is to simultaneously install multiple targets and change the target struck by the laser beam to realize the deposition of different components. However, both of these methods have some problems: on the one hand, it takes time to replace the target, and at the same time, it may introduce thermal disturbance to repeatedly anneal the deposited film, which may reduce the performance of the combination coating; on the other hand, the deposition time between the plume body formed by irradiating the target with the laser beam and the substrate is controlled by the mask to control the film deposition in different deposition areas of the substrate, and there is a situation where the film thickness distribution is non-uniform for the deposition of a large-sized combination film; and in addition, the problem of mutual contamination of targets due to the simultaneous presence of multiple targets is also likely to occur. Summary of the Invention [Problem to be solved by the invention]

[0007] In view of the above problems, it is an object of the present invention to provide a pulsed laser deposition apparatus and method that uses a laser scanning sputtering component to achieve precise control of the time of irradiation of a laser beam on a target surface, thereby improving not only the rate of film deposition but also the performance of single component and combination films. [Means for solving the problem]

[0008] According to one aspect of the present invention, there is provided a pulsed laser deposition apparatus including a deposition apparatus and a plurality of laser scanning sputtering components, the laser scanning sputtering components including a base, an adjustment device located on the base, a plurality of second brackets located on the adjustment device and extending along a third direction, and a first bracket located on the plurality of second brackets, wherein the adjustment device adjusts movement of the second bracket and the first bracket in a first direction and / or a second direction, and the first direction, second direction and third direction are perpendicular to each other.

[0009] Optionally, the adjustment device includes a first panel and a second panel, a fastener fixed to the first panel for fixing the second bracket and the adjustment device, a first slide part used to slidably fix the first panel and the second panel and positioned between the first panel and the second panel to allow relative movement between the first panel and the second panel along a first direction, and a second slide part used to slidably fix the second panel and the base and positioned between the second panel and the base to allow relative movement between the second panel and the base along a second direction.

[0010] Optionally, the adjustment device further includes a first adjustment component connected to the first slide component for controlling automated high precision displacement scanning control in a first direction between the first panel and the second panel, and a second adjustment component connected to the second slide component for controlling automated high precision displacement scanning control in a second direction between the second panel and the base.

[0011] Optionally, the plurality of second brackets are adjustable brackets.

[0012] Optionally, the adjustment device further includes a third adjustment part connected to the second bracket for adjusting a length of the second bracket in a third direction so as to adjust an inclination angle of the first bracket.

[0013] Optionally, the plurality of second brackets are provided with a fourth adjustment component for adjusting the length of the second brackets in a third direction so as to adjust the inclination angle of the first brackets.

[0014] Optionally, the first adjustment component, the second adjustment component and / or the third adjustment component comprise high precision motors.

[0015] Optionally, the first adjustment component, the second adjustment component and / or the third adjustment component are used to control a scanning path and a scanning speed on a target of a laser beam generated by a laser.

[0016] Optionally, the deposition apparatus includes a reaction cavity, a target stage for mounting a target and a substrate stage for mounting a substrate, which are installed opposite the reaction cavity, and wherein the laser scanning sputtering component controls the deposition content of corresponding components of the target in different deposition regions of the substrate by controlling a scanning speed of a scanning path of a laser beam to change a deposition time of different deposition regions of the substrate.

[0017] Optionally, the target stage is provided with a plurality of targets having the same or different deposition components, and a mask plate is provided above the target stage to form a sidewall above the target stage and to separate plumes generated when adjacent targets among the plurality of targets are sputtered, and extends near the substrate stage to separate a plurality of deposition regions of the substrate, and the mask plate and the substrate stage are moved relative to each other to change the exposure deposition time of different deposition regions of the substrate, thereby controlling the deposition content of components corresponding to the plurality of different targets in different deposition regions of the substrate, thereby forming a combined film of deposition components corresponding to the plurality of targets on the substrate.

[0018] Optionally, the combination films include linearly graded or non-linearly graded combination films of deposited components, and multi-layer heterojunction combination films in which the deposited components are alternately deposited.

[0019] Optionally, the deposition apparatus further includes a control structure having one end fixedly connected to a target stage and another end connected to a mask plate for controlling the movement of the mask plate relative to the substrate stage.

[0020] Optionally, the target stage and the substrate stage are stationary and the mask plate is moved to vary deposition times on different deposition areas of the substrate.

[0021] Optionally, the mask plate reciprocates along a direction in which the deposition composition changes gradiently.

[0022] Optionally, the control structure is also used to control the movement of the mask plate along a direction perpendicular to the substrate surface.

[0023] Optionally, the substrate stage is stationary and the target stage is moved, carrying with it the mask plate, to vary deposition times on different deposition areas of the substrate.

[0024] Optionally, the target stage reciprocates along a direction in which the deposition composition varies gradiently.

[0025] Optionally, the target stage and the mask plate are stationary and the substrate stage is moved to vary the deposition time of different deposition areas of the substrate.

[0026] Optionally, the substrate stage reciprocates along a direction in which the deposition composition changes gradiently.

[0027] Optionally, the pulsed laser deposition apparatus further includes a laser located in the first bracket for generating a laser beam.

[0028] Optionally, the laser has an indicator lamp which generates an indicator beam parallel to the laser beam for adjusting and aiming the laser.

[0029] Optionally, the wavelength of the laser beam generated by the laser includes 1064nm, 532nm, 355nm, 266nm, and different wavelengths can be selected by automatic switching.

[0030] Optionally, the lasers are turned on alternately or simultaneously.

[0031] Optionally, the deposition apparatus further includes a motor unit located outside the reaction cavity, connected to the target stage and the substrate stage, and for controlling the movement of the target stage and the substrate stage.

[0032] Optionally, the motor unit controls the target to rotate about its center so as to change a spot position of the laser beam on the target.

[0033] Optionally, the base includes a support frame connected to the adjustment device, and a pulley located at the bottom of the support frame for moving the laser scanning sputtering component.

[0034] Optionally, the pulley includes an open state and a locked state, in which the laser scanning sputtering component is movable and in which the laser scanning sputtering component is not movable.

[0035] Optionally, the pulsed laser deposition apparatus further includes a laser power supply secured to said support frame for providing power to said laser.

[0036] According to another aspect of the invention, there is provided a pulsed laser deposition method comprising: mounting at least one target on a target stage and mounting a substrate on a substrate stage; employing at least one laser beam to impinge on the target to generate a deposit; and controlling a scan speed of a scan path of the laser beam to vary deposition times of different deposition regions of the substrate, thereby controlling deposition content of corresponding components of the target at different deposition regions of the substrate, thereby forming a film on the substrate having a thickness that varies along any direction of a surface of the substrate.

[0037] Optionally, after the step of controlling the scanning speed of the scanning path of the laser beam to vary the deposition time of different deposition areas of the substrate, the pulsed laser deposition method further includes forming a deposit of a plurality of different targets on the substrate by replacing targets and repeating the deposition process to obtain a combination film.

[0038] Optionally, a plurality of targets are mounted on the target stage, each of which corresponds to at least a portion of a deposition area of ​​the substrate, and adjacent targets are separated from each other by a mask plate.

[0039] Optionally, the mask plate is fixed to a target stage to separate adjacent targets among the plurality of targets, the mask plate forms a sidewall on the target stage, the mask plate extends near the substrate stage to separate a plurality of deposition regions of the substrate, and the mask plate and the substrate stage move relative to each other to change deposition times of different deposition regions of the substrate, thereby controlling the deposition content of different corresponding components of the plurality of targets in different deposition regions of the substrate, thereby forming a deposition of the plurality of targets on the substrate to obtain a combined film.

[0040] Optionally, when the scanning path of the laser beam corresponds to a radius or diameter of the substrate, the scanning speed of the laser beam in the scanning path is controlled to gradually increase and / or gradually decrease.

[0041] Optionally, the deposit content on the substrate varies continuously along a radius or diameter of the substrate.

[0042] Optionally, the substrate is rotated along its center to vary the deposition areas corresponding to the multiple targets.

[0043] Optionally, the motion discipline in which the substrate rotates about its center includes motion directions including clockwise and counterclockwise rotations, and motion speeds including uniform and non-uniform rotations.

[0044] Optionally, a scan path of the laser beam is along at least one direction on a surface of the target.

[0045] Optionally, the change discipline of the scanning speed of the laser beam in the scanning path includes at least one of an increase and a decrease.

[0046] Optionally, the laser beam includes a plurality of targets, and when a corresponding target among the plurality of targets is in a sputtering position facing the substrate, the plurality of laser beams strike the corresponding target alternately or simultaneously.

[0047] Optionally, when a deposition area of ​​a first target of the multiple targets facing the substrate changes continuously, the number of deposits on the substrate changes with the continuous change in deposition area to form a first film having a continuously changing thickness.

[0048] Optionally, when a deposition area of ​​a second target of the multiple targets facing the substrate changes continuously, the number of deposits on the substrate changes with the continuous change in deposition area to form a second film having a continuously changing thickness.

[0049] Optionally, the pulsed laser deposition method further includes performing an annealing process on the first film and the second film to form a third film of a mixed composition of the first film and the second film. Effect of the Invention

[0050] In the pulsed laser deposition apparatus according to the present invention, the laser scanning sputtering parts adopt an adjustable bracket to fix the laser, and by changing the incident direction of the laser (including the incident angle and incident position), the laser beam can be directly incident on the target of the reaction cavity to perform film deposition; the extremely simple straight optical path greatly reduces the loss of laser energy; and the "global moving scanning" operating mode of the laser optical path parts provides extremely high stability and consistency for laser scanning sputtering.

[0051] Furthermore, the laser is a small solid-state laser, which is small and lightweight, and the low power laser adopted in the present application can reduce the cost of the equipment and reduce the volume of the equipment.

[0052] In addition, the laser scanning sputtering part in this application adopts a small laser, so that the weight of the entire laser scanning sputtering part is small, and therefore, by assembling a high-precision precision motor, the entire laser scanning sputtering part can be easily controlled with high-precision displacement scanning in a predetermined direction. In addition, the laser can adopt a small solid-state laser with a weight of about 25 kilograms, so that the process of controlling the movement of the laser in the first direction and the second direction by the adjustment device is also convenient, and the laser energy consistency of the scanning points at different positions on the surface of the target can be improved in the target scanning process.

[0053] Furthermore, in the laser scanning sputtering component of the present application, the laser is provided with an indicator lamp which generates an indicator beam and allows the tilt angle, moving direction, etc. of the laser to be easily adjusted.

[0054] Furthermore, the modular design scheme of the laser scanning sputtering components of the present application not only has higher technical compatibility and flexibility, but also achieves the purpose of quick installation and removal of the entire system.

[0055] Furthermore, in the process of depositing a large area single film or combination film, the pulsed laser deposition apparatus and method according to the present invention can control the deposition time of different deposition areas on the substrate by controlling the scanning speed when the laser beam scans the target, thereby controlling the thickness distribution of the film, compensating for the deposition of the thin parts of the film, and further improving the performance of the single film or combination film.

[0056] The pulsed laser deposition method of the present application can be employed to form multiple combination films, including a combination film having a thickness gradient along the radial direction of the substrate, and a combination film having a thickness gradient along other directions, and at the same time, the scanning speed of the laser beam scanning the target by the laser scanning sputtering component can be controlled to control the thickness distribution of the combination film and improve the performance of the combination film.

[0057] In addition, the pulsed laser deposition apparatus of the present invention can have one or more targets on its target stage. The multiple targets can adopt a method of parallel arrangement, and by combining multiple laser beams and a mask plate vertically placed between adjacent targets, and controlling the relative motion between the mask plate and the substrate, the materials of the multiple targets can be alternately deposited on the substrate to form a combined film, or the materials can be simultaneously deposited to form a combined film, thereby saving the time of target replacement and further improving the performance of the combined film.

[0058] Furthermore, in the present application, a mask plate located between the targets forms a side wall on the target stage to separate the plasma plumes formed by the multiple targets and prevent cross-contamination between the two targets, and the mask plate extends near the substrate stage and can separate the substrate into multiple different deposition regions; the relative movement between the mask plate and the substrate is controlled to make the deposition times of the different deposition regions different, and the diffusion range of the plasma plume is controlled to make the content of the formed combination film change gradually, thereby improving the performance of the combination film.

[0059] Furthermore, the mask plate extends perpendicular to the surface of the substrate, and in the process in which different components of the multiple targets form deposits on the surface of the substrate, the mask plate is not located between the targets and the substrate, thereby improving the performance of the combination film produced in the present application by significantly reducing the thermal interference situation that occurs when the mask plate moves parallel to the surface of the substrate in conventional technologies.

[0060] Furthermore, based on the miniaturization of the laser scanning sputtering components of the present application, a method may be adopted in which multiple lasers attack the target simultaneously to form a combination film, and in the manufacturing process of the combination film, the components of multiple materials will begin to diffuse, making the diffusion of the multiple components in the formed combination film more uniform.

[0061] In addition, the pulsed laser deposition method and apparatus of the present application can also adopt a multi-target (three or more) co-sputtering method to manufacture a component-graded combination film by retracting the vertical mask plate between adjacent targets or increasing the distance between the mask plate and the substrate stage, and can also adopt an alternating sputtering deposition method to manufacture a multi-layer heterojunction superlattice combination film. Therefore, the present application can not only manufacture a single component uniform film, a multi-layer structure film, and a multi-type combination film, but also improve efficiency and quality. [Brief description of the drawings]

[0062] The above and other objects, features, and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the drawings.

[0063] [Figure 1a] 1 shows a method and apparatus for preparing a combination film according to the prior art. [Figure 1b] 1 shows a method and apparatus for preparing a combination film according to the prior art. [Figure 1c]1 shows a method and apparatus for preparing a combination film according to the prior art. [Figure 1d] 1 shows a method and apparatus for preparing a combination film according to the prior art. [Diagram 2] 1 shows a thickness distribution diagram of a combination film according to the prior art. [Diagram 3] 1 shows a three-dimensional view of a pulsed laser deposition apparatus according to an embodiment of the present invention. [Figure 4] 1 shows a side view of a laser scanning sputtering component according to an embodiment of the present invention. [Diagram 5] 1 illustrates an adjustment apparatus for a laser scanning sputtering component according to an embodiment of the present invention. [Figure 6] 1 shows a schematic diagram of a pulsed laser deposition method according to an embodiment of the present invention; [Figure 7a] 1 shows a stack diagram of a combination film of a first embodiment of the present invention. [Figure 7b] 1 shows a stack diagram of a combination film of a first embodiment of the present invention. [Figure 8a] 1A and 1B show plan and cross-sectional views of a combination film according to a first embodiment of the present invention. [Figure 8b] 1A and 1B show plan and cross-sectional views of a combination film according to a first embodiment of the present invention. [Figure 9] 4 shows a stack diagram of a combination film of a second embodiment of the present invention. [Figure 10] FIG. 2 shows a plan view of a combination film according to a second embodiment of the present invention. [Figure 11] 1 shows a thickness distribution diagram of a combination film of an embodiment of the present invention. [Figure 12a] 5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a third embodiment of the present invention. [Figure 12b] 5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a third embodiment of the present invention. [Figure 12c] 5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a third embodiment of the present invention. [Figure 12d]5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a third embodiment of the present invention. [Figure 13a] 5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a fourth embodiment of the present invention. [Figure 13b] 5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a fourth embodiment of the present invention. [Figure 14a] 5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a fifth embodiment of the present invention. [Figure 14b] 5A-5C show schematic diagrams of steps in a method for preparing a combination film according to a fifth embodiment of the present invention. [Figure 15a] 13A-13C show schematic diagrams of steps in a method for preparing a combination film according to a sixth embodiment of the present invention. [Figure 15b] 13A-13C show schematic diagrams of steps in a method for preparing a combination film according to a sixth embodiment of the present invention. [Figure 15c] 13A-13C show schematic diagrams of steps in a method for preparing a combination film according to a sixth embodiment of the present invention. [Figure 16] FIG. 13 shows a schematic diagram of a method for preparing a combination film according to a seventh embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0064] The present invention will be described in more detail below with reference to the accompanying drawings. In each of the accompanying drawings, the same elements are represented by similar reference numerals. Parts in the accompanying drawings are not drawn to scale for clarity. Also, some known parts may not be shown. For simplification, a semiconductor structure obtained through multiple steps may be illustrated in one figure.

[0065] In describing the structure of a device, it is understood that when a layer or region is referred to as being "on" or "above" another layer or region, it can mean directly on top of the other layer or region, or it can mean that there are additional layers or regions between them. Also, if the device were inverted, the layer or region would be "below" or "under" the other layer or region.

[0066] To describe the case where a layer or region is directly located on another layer or region, the present specification employs the phrases "directly located on" or "located on and adjacent to."

[0067] 1a-1d show a method and an apparatus for preparing a combination film according to the prior art, and FIG. 2 shows a thickness distribution diagram of the combination film according to the prior art.

[0068] As shown in Figures 1a to 1d, in a conventional composite film manufacturing apparatus 100, a substrate 111 is placed opposite a first target 112, and a mask plate 113 is placed between the substrate 111 and the first target 112. When a laser beam 116 is struck on the first target 112, a plume body 115 is formed, and the plume body 115 deposits and forms a first film 114a on the surface of the substrate 111 facing the first target 112. In this process, the mask plate 113 is moved to block contact between a portion of the plume body 115 and the surface of the substrate 111, and the formed first film 114a becomes linear in the thickness plane.

[0069] For example, the mask plate 113 is initially located outside the edge of the first target 112 and the substrate 111 (as shown by the dashed line in FIG. 1a ), and after the laser beam 116 strikes the first target 112, the mask plate 113 moves from one side of the substrate 111 to the other side of the substrate 111 at a uniform speed, and in this process, some of the surfaces of the substrate 111 are blocked, and the first film 114a cannot be formed, and after the mask plate 113 moves to the entire surface of the substrate 111 that is blocked, it stops moving, replaces the second target 112, and strikes the laser beam 116. 6 to continue to impact the second target 112, and the mask plate 113 continues to move along a straight line, beginning to expose a portion of the surface of the substrate 111, thereby beginning to form a second film 114b, until it reaches the other side of the substrate 111, and forms a third film including the first film 114a and the second film 114b on the surface of the substrate 111, and then performs an annealing process on the third film, so that the components of the first film 114a and the second film 114b interpenetrate each other to form a combination film 114, as shown in FIG. 1d.

[0070] In the final combination film 114, for example, the leftmost first target 112 has a material a content of 100%, the second target 112 has a material b content of 0%, the rightmost a has a material content of 0% and a material b content of 100%, and in the process from left to right, the material a content decreases linearly and the material b content increases linearly.

[0071] However, in such a preparation method of the combination film, since the a material and the b material are deposited alternately, it takes time to replace the target after one material is deposited, thereby reducing the deposition speed; and, when depositing the same material, the mask plate 113 needs to be moved to block part of the surface of the substrate 111, which will cause thermal interference on the substrate in the process of moving the mask plate 113, causing the deposited film 114 to be repeatedly annealed, and at the same time, in the process of replacing the target, phenomena such as temperature change will occur in the deposited film, and the content of the finally formed combination film will change nonlinearly, thereby reducing the performance of the combination film.

[0072] Furthermore, in the prior art, when depositing a single material film or a combination film over a large area, due to the rotation of the substrate and / or target and the scanning path of the laser beam, the final formed film will have thickness variations. As shown in FIG. 2, the formed film will have some errors in film thickness due to various factors in different deposition areas of the substrate, and it is necessary to perform thickness compensation on the film in order to obtain a film with a uniform thickness.

[0073] The inventors of the present application provide a pulsed laser deposition method and apparatus, which can effectively solve the above problems.

[0074] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described in more detail in conjunction with the drawings and examples.

[0075] Figure 3 shows a three-dimensional view of a pulsed laser deposition apparatus according to an embodiment of the present invention. Figure 4 shows a side view of a laser scanning sputtering component according to an embodiment of the present invention. Figure 5 shows an adjustment device of the laser scanning sputtering component according to an embodiment of the present invention.

[0076] Referring to FIG. 3, a pulsed laser deposition system 200 according to an embodiment of the invention includes a deposition system 210 and a plurality of laser scanning sputtering components 220, with FIG. 3 showing an embodiment having three laser scanning sputtering components 220.

[0077] In this embodiment, the deposition apparatus 210 (see FIG. 6 ) includes a reaction cavity 212, a plurality of first windows 211 located on the sidewall of the reaction cavity 212, a second window (not shown), a bracket for supporting the reaction cavity 212, a motor unit 216 located outside the reaction cavity 212, and a vacuum structure, where the first window 211 is a laser beam incident window, the second window is, for example, an observation window, the motor unit 216 is used to rotate the heating stage and the substrate inside the reaction cavity 212 and rotate the fixed stage and the target inside the reaction cavity, and the vacuum structure is used to suction the inside of the reaction cavity so as to maintain a vacuum pressure inside the reaction cavity.

[0078] Further, referring to FIG. 4, each laser scanning sputtering component 220 includes a laser 221, a first fixing portion 222, a first bracket 223, a second bracket 224, an adjustment device 225 and a base.

[0079] Here, the first bracket 223 has a planar bracket structure, and the bottom of the laser 221 is fixedly connected to one side of the first bracket 223 via the first fixing part 222, i.e., the first bracket 223 is used to fix and support the laser 221. In this embodiment, the laser 221 has an indicator lamp located near the laser beam outlet of the laser 221 and capable of generating an indicator beam parallel to the laser beam, and the indicator beam is used to adjust the aim so that the adjustment of the laser 221 is appropriate when adjusting the height and inclination of the laser 221.

[0080] The second bracket 224 is a vertical bracket structure and is fixedly connected to another side of the first bracket 223, where the second bracket 224 includes multiple adjustable brackets extending vertically, and by adjusting the extension and contraction states of the adjustable brackets at different positions of the second bracket 224, the surface height and inclination of the first bracket 223 can be adjusted, and further the horizontal height and inclination of the laser 221 can be adjusted.

[0081] The adjustment device 225 is a planar adjustment structure located at the other end of the second bracket 224 and fixedly connected to the second bracket 224, and the adjustment device 225 has a driving structure for changing the position direction of the second bracket 224, the first bracket 223, and the laser 221, etc.

[0082] The base is located below the adjustment device 225, has a substantially rectangular parallelepiped structure, and includes a support frame 227. The upper surface of the support frame 227 is fixedly connected to the lower surface of the adjustment device 225, and is used to support the adjustment device 225, the second bracket 224, the first bracket 223, the laser 221, etc. on the one hand, and is used to provide a height for the laser 221 on the other hand.

[0083] In this embodiment, the specific structure of the adjustment device 225 is as shown in FIG. 5, where the adjustment device 225 includes a first panel 2251, a second panel 2256, a fastener 2252, a first slide part 2257 and a second slide part 2254.

[0084] The fasteners 2252 include a plurality of fasteners, which are fixed to the top surface of the first panel 2251, and the fasteners 2252 are used to fasten the bottom of the second bracket 224 and the adjustment device 225. In this embodiment, if the fasteners 2252 include, for example, six fasteners, the adjustable bracket of the second bracket 224 also includes six fasteners.

[0085] The first slide part 2257 is located between the first panel 2251 and the second panel 2256, and is used to slidably fix the first panel 2251 and the second panel 2256, and at the same time, moves the first panel 2251 and the second panel 2256 relatively along the extension direction of the first slide part 2257 in the horizontal plane. The second slide part 2254 is located between the second panel 2256 and the upper surface of the support frame 227, and is used to slidably fix the second panel 2256 and the upper surface of the support frame 227, and at the same time, moves the second panel 2256 and the support frame 227 relatively along the extension direction of the second slide part 2254 in the horizontal plane. The extension directions of the first slide part 2257 and the second slide part 2254 are vertical.

[0086] In this embodiment, the extension direction of the first slide part 2257 is a first direction, for example, the y direction, and the extension direction of the second slide part 2254 is a second direction, for example, the x direction, and the first direction and the second direction are perpendicular to each other. The adjustment device 225 is connected to the laser 221 through the second bracket 224 and the first bracket 223, so that when the first panel 2251 is moved along the first direction of the first slide part 2257, the laser 221 also moves along the first direction, and when the second panel 2256 is moved along the second direction of the second slide part 2254, the laser 221 also moves along the second direction. Note that the adjustable bracket extension direction of the second bracket 224 is a third direction, for example, the z direction, and the third direction is perpendicular to the first direction and the second direction.

[0087] Moreover, the adjustment device 225 further includes a first adjustment part 2255 and a second adjustment part 2253. The first adjustment part 2255 is located between the first panel 1251 and the second panel 2256, connected to the first slide part 2257, and used to control high-precision displacement scanning control in a first direction of the first panel 2251 relative to the second panel 2256. The second adjustment part 2253 is located between the second panel 2256 and the upper surface of the support frame 227, connected to the second slide part 2254, and used to control high-precision displacement scanning control in a second direction of the second panel 2256 relative to the support frame 227.

[0088] In this embodiment, the first adjustment component 2255 and the second adjustment component 2253 are, for example, a high-precision precision motor, respectively, used to control the automated displacement scanning control in the first direction and the second direction of the adjustment device 225. Furthermore, by modifying the program, the displacement scanning path time of the first adjustment component 2255 and the second adjustment component 2253, etc. can be changed to change the displacement scanning path time of the laser 221.

[0089] In addition, the adjustment device 225 may further include a third adjustment part (not shown), which is connected to the second bracket 224 and is used to control the length of the multiple adjustable brackets of the second bracket 224 in the third direction, and further adjust the tilt angle of the first bracket 223 and the laser 221, and the third adjustment part is, for example, a high-precision precision motor. In another embodiment, a fourth adjustment part (not shown) may be installed on the multiple adjustable brackets of the second bracket 224, and the length of the multiple adjustable brackets of the second bracket 224 in the third direction may be controlled by the fourth adjustment part, and the fourth adjustment part is, for example, a screw knob.

[0090] Further, referring to FIG. 4, each laser scanning sputtering component 220 further includes a laser power supply 226, and the base further includes a pulley 228. Here, the laser power supply 226 is located on the support frame 227, and is used to supply power to the laser 221, and increases the weight of the middle and lower parts of the laser scanning sputtering component 220, changes the center of gravity of the laser scanning sputtering component 220, and makes the laser scanning sputtering component 220 less likely to have problems such as tipping over, and the pulley 228 is located around the bottom of the support frame 227, and can move the entire laser scanning sputtering component 220. Note that the pulley 228 includes two states, an open state and a locked state, and in the open state, the entire laser scanning sputtering component 220 can be moved to a predetermined position, and in the locked state, the pulley 228 does not move, and the laser scanning sputtering component 220 can remain in a predetermined position.

[0091] The pulsed laser deposition apparatus according to the present application may be used to deposit single material films or combination films, the latter of which are described in the following examples of the present application.

[0092] FIG. 6 shows a schematic diagram of a pulsed laser deposition method according to an embodiment of the present invention.

[0093] The pulsed laser deposition apparatus 200 of the present application includes a deposition apparatus 210 and a laser scanning sputtering component 220 as shown in Fig. 3, and the pulse deposition method of the pulsed laser deposition apparatus 200 is as shown in Fig. 6, where Fig. 6 also shows a part of the structure inside the reaction cavity in the deposition apparatus 210. Referring to Fig. 6, the deposition apparatus 210 includes a reaction cavity 212, a substrate stage, a target stage 233, a window 211 and a motor unit 216.

[0094] Here, the reaction cavity 212 includes a substrate 321, at least one target 331, a target stage 233 to which the target 331 is attached, and a substrate stage (not shown) to which the substrate 321 is attached. The motor unit 216 is connected to the target stage 233 and / or the substrate stage, and is used to move the target stage 233 and the substrate stage relative to each other, specifically, to control the target stage 233 or the substrate stage to reciprocate along a linear direction, for example. At the same time, the motor unit 216 is also used to control the target 331 fixed to the target stage 233 to rotate by itself along the center of the target 331. The laser beams emitted from multiple tilted fixed lasers 221 (only two are shown in the figure) enter the reaction cavity 212 through the focus mirror and the window 211 on the reaction cavity 212 and irradiate the target 331. With a sufficiently high energy density and short pulse time, the target 331 absorbs the laser beam energy and the spot temperature quickly rises to above the evaporation temperature of the target 331, generating high temperature and ablation. The target 331 undergoes vaporization and sputtering, and atoms, molecules, electrons, ions, molecular clusters, micro-scale droplets, solid particles, etc. escape from the surface of the target 331 to form a regionalized high-temperature and high-density plasma 332. The plasma 332 forms a large temperature and pressure gradient in the normal direction of the target 331 and expands along this direction, forming a plasma plume 332 along the normal direction of the target 331. The high-energy ions in the plasma plume 332 collide with the surface of the substrate 321, generating atomic sputtering to form a film on the surface of the substrate 321. In this embodiment, the substrate stage for the substrate 321 also has a heater (not shown) for heating the substrate 321 to a reaction temperature.

[0095] In this embodiment, the laser 221 moves relative to the target 331 so that the spot formed by the laser beam on the surface of the target 331 can scan the surface of the target 331. Here, in the embodiment in which the laser 221 moves relative to the target 331, the laser 221 or the target 331 can linearly reciprocate and synchronize with the rotation of the target 331 so that the spot formed on the target 331 by the laser beam can scan the surface of the target 331 in a radial direction. Furthermore, since the spot of the laser beam on the surface of the target 331 reciprocates along the radial direction and the target 331 itself rotates along the center of the target 331, the laser beam can be controlled to gradually slow down the moving speed of the laser beam from the center to the edge of the target 331 in the process of moving the surface of the target 331 so that the entire surface of the target 331 is scanned by the laser beam and the surface of the target 331 is uniformly scanned by the laser beam, and further, a combination film can be formed on the surface of the substrate 321 in synchronization with the relative movement of the mask plate 333 and the substrate 321.

[0096] In the embodiment shown in Fig. 6, the target stage 233 is, for example, a large fixed platen, and has at least one mounting point to mount at least one target 331. In the case of multiple targets 331, the materials may be different, for example, material a and material b. Fig. 6 shows a situation in which two targets are used, in which a mask plate 333 is installed between the first target 331a and the second target 331b, one end of which is connected to the target stage 233 and the other end of which extends along a direction perpendicular to the surface of the target, reaching near the surface close to the substrate 321, and separating multiple deposition areas of the target 331. Two lasers 221 are used to generate laser beams that collide with the first target 331a and the second target 331b, respectively, and the two lasers may be turned on simultaneously or alternately.

[0097] In one embodiment, for example, when two lasers 221 are turned on alternately, when one laser 221 is irradiated on the first target 331a, the mask plate 333 moves in the direction of the second target 331b relative to the substrate 321, when another laser 221 is irradiated on the second target 331b, the mask plate 333 moves in the direction of the first target 331a relative to the substrate 321, and with one reciprocating motion of the mask plate 333, the area of ​​the first deposition region on the surface of the substrate 321 corresponding to the first target 331a first increases and then decreases, in this process, the deposition times of different positions of the first deposition region are different, thus forming a first film that changes in a gradient, and correspondingly, the second deposition region can form a second film that changes in a gradient, thereby forming a third film (see FIG. 8b) on the surface of the substrate 321, which is composed of a first film of a material and a second film of b material, and the thicknesses of the two materials change in a gradient, respectively. Specifically, the change in deposition thickness of the first film and / or the second film can be controlled by controlling the relative movement speed between the mask plate 333 and the substrate 321, so that the component change of the final combined film may be linear or non-linear, and those skilled in the art can control the relative movement speed between the mask plate 333 and the substrate 321 based on the specific combined film conditions.

[0098] In the process of forming the combination film, the mask plate 333 is used, on the one hand, to prevent cross-contamination of adjacent targets, and on the other hand, to block part of the plasma plume, to separate the surface of the substrate 321 into different deposition areas, and to realize the deposition of different components by controlling the deposition time of different deposition areas, so that the material change of the finally formed combination film is gradient.

[0099] In this embodiment, the reaction cavity 212 also has multiple sensors (not shown) to monitor the vacuum pressure within the reaction cavity, the thickness of the film deposition, the substrate heating temperature, etc., to better control the reaction conditions and the rate at which the reaction proceeds.

[0100] Furthermore, in another embodiment, multiple mounting points are provided on the target stage 233, and multiple targets of different materials can be selected to be mounted on the target stage 233 based on the specific requirements of the combined film to be produced, and the multiple targets of different materials are distributed along a straight line, and a mask plate is provided between adjacent targets to prevent cross-contamination.

[0101] 7a and 7b show stacking diagrams of the combined film of the first embodiment of the present invention. FIGs. 8a and 8b show plan and cross-sectional views of the combined film of the first embodiment of the present invention. FIG. 9 shows stacking diagram of the combined film of the second embodiment of the present invention. FIG. 10 shows plan view of the combined film of the second embodiment of the present invention. FIG. 11 shows thickness distribution diagram of the combined film of the embodiment of the present invention.

[0102] 7a, in the first embodiment, the target 331 is, for example, material B, and when forming a combination film, the substrate 321 rotates at a uniform speed along its center, the target 331 also rotates at a uniform speed along its center, and the laser beam 341 generated by the laser 221 generates a spot on the surface of the target 331 that reciprocates along the radius of the target 331. Therefore, the plasma plume 332 formed by irradiating the target 331 with the laser beam forms a film on the surface of the substrate 321.

[0103] Furthermore, to form a combination film with a graded material, when the laser beam is irradiated to the central region of the target 331, the scanning time or scanning speed is long, i.e., the time required to scan the same distance in the region is long, and the scanning speed of the laser beam irradiating the target 331 can be controlled to gradually decrease from the center to the edge of the target 331, thereby obtaining a film whose film thickness gradually decreases from the center to the edge of the substrate. For example, in Figures 7a and 7b, the thickness of the line of the plasma plume 332 indicates the scanning speed of the laser beam 341, where a thicker line indicates a longer scanning time and a thinner line indicates a shorter scanning time.

[0104] In this embodiment, the motion discipline of the substrate 321 rotating along the center includes a motion direction and a motion speed. Here, the motion direction includes clockwise rotation and counterclockwise rotation, and the motion speed includes uniform rotation and non-uniform rotation. In the embodiment shown in Fig. 7a, the substrate 321 rotates at a uniform speed along the clockwise direction, for example.

[0105] In the embodiment shown in Fig. 7a, the material to be deposited is, for example, B material, and after replacing the target 331 with A material, the scanning speed of the laser beam 341 on the surface of the target can be modified to obtain the combined film shown in Fig. 8a and Fig. 8b. Here, when depositing A material, in the process of the laser beam 341 reciprocating along the radius of the target 331, the scanning speed of the laser beam 341 on the target 331 gradually decreases from the edge to the center, forming a film A with thick edges and thin middle shown in Fig. 8b, and after replacing the target with B material, by changing the scanning speed of the laser beam on the surface of the target 331 inversely to that of the A material, a film B with a thickness conversion inverse to that of the film A is obtained, and a combined film is formed after diffusing the film A and the film B.

[0106] 7b, a deposition method employing multiple lasers and multiple targets to simultaneously form a combination film is shown, where multiple targets 331 are mounted on a target stage, and adjacent targets 331 are separated by mask plates 333.

[0107] In the embodiment shown in FIG. 7b, the substrate 321 rotates along its center, the diameter of the multiple targets 331 is greater than or equal to the radius of the substrate 321, and at the same time, the projection of the multiple targets 331 on the substrate 321 covers at least the circle of the substrate 321 from the center to the edge.

[0108] When depositing the combination film of the first embodiment, the multiple targets 331 adopt different compositions, and a mask plate 333 is used to separate adjacent targets 331 and prevent target contamination. When the multi-beam laser strikes corresponding targets simultaneously or alternately, the scanning speed of the scanning path of the corresponding laser beam on the surface of the target is also different according to the composition of the target, thereby changing the deposition time of different deposition areas of the substrate 321.

[0109] 7b, when the target 331a is, for example, an A material and the target 331b is, for example, a B material, and when forming the combination film of the first embodiment, if the laser beam on the target 331a has a long scanning time on the target 331a away from the center of the substrate 321, and the scanning speed gradually decreases in the direction of the edge of the substrate toward the center, and the substrate 321 rotates, a film A with thick edges and thin centers can be formed on the surface of the substrate 321. Similarly, if the laser beam on the target 331b has a short scanning time on the target 331b away from the center of the substrate 321, and the scanning speed gradually increases in the direction of the edge of the substrate toward the center, and the substrate 321 rotates, a film B with thin edges and thick centers can be formed on the surface of the substrate 321.

[0110] 8a and 8b respectively show schematic diagrams of forming a combination film of the first embodiment, in which the deposition time of different deposition areas of the substrate is changed by controlling the scanning speed of the scanning path of the laser beam, thereby forming a combination film in which the thicknesses of different components on the substrate surface change continuously; at the same time, by controlling the scanning speed of the laser beam, the thickness uniformity of the combination film can be precisely controlled and the performance of the film can be improved.

[0111] In other embodiments, the scanning path of the laser beam on the surface of the target may be along any direction on the surface of the target, or the scanning path of the laser beam on the surface of the target may be along multiple directions on the surface of the target, i.e., the scanning path of the laser beam may change, and further, the scanning speed of the scanning path of the laser beam on the surface of the target may be at least one of increasing or decreasing, and in accordance with the rotation of the substrate, the method of preparing the combination film of the present application may theoretically be in any direction.

[0112] 9 and 10 show the manufacturing diagram of the combination film of the second embodiment of the present invention. Compared with the first embodiment, in the combination film of the second embodiment, the A material and the B material have a thickness gradient along one diameter of the substrate.

[0113] 9, when depositing the combination film of the second embodiment, the substrate 321 is held stationary, and the scanning path and scanning speed of the laser beam on the surface of the target 331 are controlled to form the combination film. Here, when depositing the B material, for example, the laser beam scanning time is controlled to be short on the diameter C1-C2 of the substrate 321 and on the target 331 corresponding to the point C1, so that the deposition thickness of the B material on the substrate 321 at C1 is small, and the scanning time of the laser beam in the C1-C2 direction is increased, thereby realizing the thickness change of the deposited film.

[0114] In this embodiment, the deposition area with the longest deposition time is set at point C2 on the substrate 321, and the scanning speed of the laser beam is controlled to realize the deposited film B having a circle centered at point C2 and a thickness gradually decreasing outward along the center of the circle. Furthermore, when depositing material A, for example, the scanning time of the laser beam is controlled to be the opposite to that when depositing material B, to obtain film A having a circle centered at point C1 and a thickness decreasing outward along the center of the circle.

[0115] By performing an annealing treatment on a combination film composed of film A and film B, a combination film in which the content of material A and the content of material B gradually change as shown in Figure 10 can be obtained.

[0116] In addition, Fig. 11 shows the thickness distribution diagram of the combined film of the embodiment of the present invention. Compared with the thickness graph of the prior art (see Fig. 2), in the present application, the scanning speed during laser beam scanning is controlled to make the deposition time of different deposition areas of the substrate different, thereby forming film A and / or film B with varying thickness, and if it is found that the thickness of the film is uneven during the deposition process, the scanning speed of the laser beam in the area corresponding to the surface of the target is adjusted to adjust the thickness of the film, thereby improving the uniformity of the film deposition.

[0117] Figures 12a to 12d show schematic diagrams of each step of a method for preparing a combination film according to a third embodiment of the present invention. Figures 13a and 13b show schematic diagrams of each step of a method for preparing a combination film according to a fourth embodiment of the present invention. Figures 14a and 14b show schematic diagrams of each step of a method for preparing a combination film according to a fifth embodiment of the present invention. Figures 15a to 15c show schematic diagrams of each step of a method for preparing a combination film according to a sixth embodiment of the present invention. Compared with the deposition method of the second embodiment, the target stage and / or base in the deposition methods of the third, fourth and fifth embodiments move.

[0118] In a third embodiment shown in Figures 12A to 12b, the mask plate 333 is fixedly connected to the target stage 233, and the mask plate 333 and the substrate 321 are moved relative to each other by the moving target stage 233, whereby, for example, two lasers are alternately turned on to generate laser beams that collide with the first target 331a and the second target 332b alternately.

[0119] Referring to FIG. 12a, in the initial stage, the substrate 321 is placed facing the first target 331a of a material, in this case, the laser 221(a) corresponding to the first target 331a is turned on, and the generated laser beam is irradiated to the first target 331a to generate a first plasma plume 332a, and the mask plate 333 is placed between the first target 331a and the second target 331b and extends in a direction perpendicular to the surface of the target, so that the surface of the substrate 321 is separated into a plurality of deposition regions, so that the first plasma plume 332a generated by the laser beam colliding with the first target 331a does not contaminate the second target 331b, and the mask plate 333 makes different regions of the surface of the substrate 321 have different times in the deposition region, and further makes the contents of the same material deposited in different regions different, thereby depositing and forming a combination film with linearly changing contents on the surface of the substrate 321.

[0120] Further, the target stage 233 is moved in a direction in which the second target 331b faces the first target 331a, and the first target 331a and the second target 331b move together with the target stage 233 until the second target 331b faces the position of the substrate 321, forming a first film 336a with a gradient distribution on the surface of the substrate 321, as shown in FIG. 12b.

[0121] In this step, one side of the substrate 321 facing the first target 331a has a longer contact time with the first plasma plume 332a, and therefore the first film 336a grows thicker on this side; furthermore, since the target stage 233 moves at a constant speed and the mask plate 333 blocks the diffusion of part of the first plasma plume 332a toward the second target 331b, i.e., the non-deposition area, the formed first film 336a has a thickness that linearly decreases (continuously changes) in the direction from the first target 331a toward the second target 331b.

[0122] Further, the laser 221(a) corresponding to the first target 331a is turned off, and the laser 221(b) corresponding to the second target 331b is turned on, and the target stage 233 and the targets are moved along the direction in which the first target 331a faces the second target 331b, as shown in Figures 12c and 12d.

[0123] In this step, the second target 331b is irradiated with a laser beam to generate a second plasma plume 332b, and a second film 336b is formed on the surface of the substrate 321. At the same time, due to the movement of the second target 331b and the blocking of the mask plate 333, the thickness of the formed second film 336b on one side of the substrate 321 corresponding to the second target 331b becomes larger, and since the second target 331b moves at a constant speed, the thickness of the formed second film 336b changes linearly (continuously).

[0124] The method further includes subjecting the first film 336a and the second film 336b to an annealing treatment to form a third film 336 (a combination film) of the mixed components of the first film 336a and the second film 336b.

[0125] In another embodiment, film growth of the a and b materials is achieved by further moving the substrate.

[0126] In the embodiment shown in Figures 12a to 12d, the plasma plume 332 generated by the collision of the first target 331a and the second target 331b with the laser beam can be seamlessly connected, thereby eliminating the time required for replacing targets in the production of the combination film and improving the production speed of the combination film.

[0127] Furthermore, during the entire film manufacturing process, the only changes in the reaction cavity 212 are the movement of the target and the alternation of the plasma plume, and there is no stagnation and thermal interference in the film manufacturing process due to the replacement of the target and the movement of the mask plate, so the content of the combined film formed by this method changes more linearly, and therefore the performance is better.

[0128] In addition, the mask plate 333 is located between the two targets and extends perpendicular to the surface direction of the targets, which can not only reduce the mutual influence between the two targets, but also confine the plasma plume to a certain range, and make the thickness variation of the deposited film more linear.

[0129] 13a and 13b show schematic diagrams of the steps of the method for preparing a combination film according to the fourth embodiment of the present invention. Compared with the third embodiment, the fourth embodiment realizes the preparation of the combination film only by moving the mask plate 333, and at the same time employs alternately turned-on lasers to generate corresponding laser beams.

[0130] In this embodiment, referring to Figures 13a and 13b, the target stage 233 further includes a control structure 237, and the mask plate 333 is connected to the control structure 237, which is used to control the reciprocating motion of the mask plate 333.

[0131] Here, the target 331a and the target 331b are respectively located at positions corresponding to the substrate 231, that is, the plasma plume 332 generated by the laser beam colliding with the target can deposit and form a film on the surface of the substrate 321. As shown in FIG. 13a, when the laser beam collides with the first target 331a, the mask plate 333 is moved by the control structure 237 (along the dashed line direction in the figure) to generate an area of ​​a first deposition region corresponding to the first target 331a, and the deposition times of different positions in the first deposition region are different, forming a first film 336a that changes gradually; and the mask plate is moved in the opposite direction, and the area of ​​a second deposition region corresponding to the second target 331b changes, forming a second film 336b.

[0132] In this embodiment, the deposition time of different deposition regions can be controlled by moving the mask plate 333, and in order to avoid cross-contamination between adjacent targets, for example, targets with small areas can be selected, so that the distance between adjacent targets can be set farther, and the target contamination is less likely to occur. In another embodiment, for example, the shape of the mask plate 333 near the target can be changed, for example, the lower part of the mask plate adopts an elastic material, and in the process of moving the mask plate 333, the elastic material can cover the target, but the upper part is still held vertically, in this way, even if the distance between adjacent targets is close, other targets can be protected from contamination in the process of moving the mask plate 333. Those skilled in the art can consider changing the structural shape of the mask plate 333 near the target 331 to prevent the adjacent targets from being contaminated.

[0133] 14a and 14b show schematic diagrams of the steps of the method for preparing a combination film according to the fifth embodiment of the present invention. Compared with the third and fourth embodiments, the fifth embodiment, for example, employs a moving substrate 321 and two lasers to collide with two targets at the same time to generate two plasma plumes for film deposition.

[0134] Referring to Figures 14a and 14b, two lasers 221 are turned on simultaneously to collide with a first target 331a and a second target 331b, respectively, generating plasma plumes 332a and 332b, and the substrate 321 is moved back and forth to form a combination film 336 on the surface of the substrate 321 in which the two materials are mutually diffused.

[0135] In this embodiment, since the two materials are deposited simultaneously, interdiffusion of the two materials occurs during the deposition process, thereby increasing the diffusion effect of the combined film and improving the performance of the combined film.

[0136] Moreover, compared with the third embodiment, in the preparation method of the combination film of the fifth embodiment, two materials are deposited simultaneously, which further increases the production speed of the combination film and reduces the time cost.

[0137] In other embodiments, further movement of substrate 321 can be achieved to produce a combination film.

[0138] 15a-15c show schematic diagrams of the steps of the preparation method of the combination film according to the sixth embodiment of the present invention. Compared with the third to fifth embodiments, the sixth embodiment is a multi-layer heterojunction combination film in which two materials are alternately deposited, and the thickness of each layer material remains consistent.

[0139] 15a and 15b, in this embodiment, the mask plate 222 between the first target 331a and the second target 331b is partially lowered, and the mask plate 333 is only used to prevent cross-contamination between the two targets, and the two lasers 221 are alternately turned on to generate plasma plumes 332a and 332b, respectively, to deposit and form a combination film (as shown in FIG. 15c) in which the a material and the b material are alternately stacked on the surface of the substrate 321.

[0140] In this embodiment, the target and / or substrate are moved to ensure that the combined film formed on the surface of the substrate 321 is uniform and efficient.

[0141] 16 shows a schematic diagram of a method for preparing a combination film according to a seventh embodiment of the present invention. Compared with other embodiments, the seventh embodiment shows a schematic diagram of the preparation of a combination film by co-sputtering free diffusion.

[0142] 16, two lasers 221 can be turned on simultaneously to simultaneously generate corresponding plasma plumes 332a and 332b, and a combination film of material a and material b can be deposited on the surface of substrate 321. Here, in this embodiment, since material a and material b are deposited simultaneously, the two materials can mutually diffuse during the deposition process, thereby increasing the diffusion effect of the combination film and improving the performance of the combination film.

[0143] In the pulsed laser deposition apparatus according to the present invention, the laser scanning sputtering parts adopt an adjustable bracket to fix the laser, and by changing the incident direction of the laser (including the incident angle and incident position), the laser beam can be directly incident on the target of the reaction cavity to perform film deposition; the extremely simple straight optical path greatly reduces the loss of laser energy; and the "global moving scanning" operating mode of the laser optical path parts provides extremely high stability and consistency for laser scanning sputtering.

[0144] Furthermore, the laser is a small solid-state laser, which is small and lightweight, and the low power laser adopted in the present application can reduce the cost of the equipment and reduce the volume of the equipment.

[0145] In addition, the laser scanning sputtering part in this application adopts a small laser, so that the weight of the entire laser scanning sputtering part is small, and therefore, by assembling a high-precision precision motor, the entire laser scanning sputtering part can be easily controlled with high-precision displacement scanning in a predetermined direction. In addition, the laser can adopt a small solid-state laser with a weight of about 25 kilograms, so that the process of controlling the movement of the laser in the first direction and the second direction by the adjustment device is also convenient, and the laser energy consistency of the scanning points at different positions on the surface of the target can be improved in the target scanning process.

[0146] Furthermore, in the laser scanning sputtering component of the present application, the laser is provided with an indicator lamp which generates an indicator beam and allows the tilt angle, moving direction, etc. of the laser to be easily adjusted.

[0147] Furthermore, the modular design scheme of the laser scanning sputtering components of the present application not only has higher technical compatibility and flexibility, but also achieves the purpose of quick installation and removal of the entire system.

[0148] Furthermore, in the process of depositing large area films or combination films, the pulsed laser deposition apparatus and method according to the present invention can control the deposition time of different deposition areas of the substrate by controlling the scanning speed when the laser beam scans the target, thereby controlling the thickness distribution of the film, compensating for the deposition of the thin parts of the film, and further improving the performance of the film.

[0149] In addition, the pulsed laser deposition method of the present application can also be employed to form multiple combination films, including a combination film with a thickness gradient along the radial direction of the substrate and a combination film with a thickness gradient along other directions, and at the same time, the scanning speed of the laser beam scanning the target by the laser scanning sputtering component can be controlled to control the thickness distribution of the combination film and improve the performance of the combination film.

[0150] In addition, the pulsed laser deposition apparatus of the present invention can have one or more targets on its target stage. The multiple targets can adopt a method of parallel arrangement, and by combining multiple laser beams and a mask plate vertically placed between adjacent targets, and controlling the relative motion between the mask plate and the substrate, the materials of the multiple targets can be alternately deposited on the substrate to form a combined film, or the materials can be simultaneously deposited to form a combined film, thereby saving the time of target replacement and further improving the performance of the combined film.

[0151] Furthermore, in the present application, a mask plate located between the targets forms a side wall on the target stage to separate the plasma plumes formed by the multiple targets and prevent cross-contamination between the two targets, and the mask plate extends near the substrate stage and can separate the substrate into multiple different deposition regions; the relative movement between the mask plate and the substrate is controlled to make the deposition times of the different deposition regions different, and the diffusion range of the plasma plume is controlled to make the content of the formed combination film change gradually, thereby improving the performance of the combination film.

[0152] Furthermore, the mask plate extends perpendicular to the surface of the substrate, and in the process in which different components of the multiple targets form deposits on the surface of the substrate, the mask plate is not located between the targets and the substrate, thereby improving the performance of the combination film produced in the present application by significantly reducing the thermal interference situation that occurs when the mask plate moves parallel to the surface of the substrate in conventional technologies.

[0153] Furthermore, based on the miniaturization of the laser scanning sputtering components of the present application, a method may be adopted in which multiple lasers attack the target simultaneously to form a combination film, and in the manufacturing process of the combination film, the components of multiple materials will begin to diffuse, making the diffusion of the multiple components in the formed combination film more uniform.

[0154] In addition, the pulsed laser deposition method and apparatus of the present application can also adopt a multi-target (three or more) co-sputtering method to manufacture a component-graded combination film by retracting the vertical mask plate between adjacent targets or increasing the distance between the mask plate and the substrate stage, and can also adopt an alternating sputtering deposition method to manufacture a multi-layer heterojunction superlattice combination film. Therefore, the present application can not only manufacture a single component uniform film, a multi-layer structure film, and a multi-type combination film, but also improve efficiency and quality.

[0155] According to the embodiments of the present invention, for example as described above, these embodiments do not detail all the details and do not limit the invention to only the specific embodiments. Obviously, many modifications and variations are possible based on the above description. These embodiments are selected and specifically described in this specification in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and the modifications and uses based on the present invention. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. 1. A pulsed laser deposition apparatus including a deposition apparatus and a plurality of laser scanning sputtering components, the laser scanning sputtering components comprising: With the base, an adjustment device located on the base; a plurality of second brackets located on the adjustment device and extending along a third direction; a first bracket located on a plurality of said second brackets; wherein the adjustment device adjusts the movement of the second bracket and the first bracket in a first direction and / or a second direction, the first direction, the second direction and a third direction being perpendicular to each other.

2. The adjustment device comprises: A first panel and a second panel; a fastener secured to the first panel for securing the second bracket and the adjustment device; a first slide component used for slidably fixing the first panel and the second panel, the first slide component being positioned between the first panel and the second panel so as to allow the first panel and the second panel to move relatively along a first direction; 2. The pulsed laser deposition apparatus of claim 1, further comprising: a second slide component positioned between the second panel and the base, the second slide component being used to slidably secure the second panel and the base, and allowing relative movement between the second panel and the base along a second direction.

3. The adjustment device comprises: a first adjustment component connected to the first slide component for controlling automated high precision displacement scanning control of the first panel and the second panel in a first direction; 3. The pulsed laser deposition apparatus of claim 2, further comprising: a second adjustment component connected to the second slide component for controlling automated high precision displacement scanning control of the second panel and base in a second direction.

4. 4. The pulsed laser deposition apparatus of claim 1 or 3, wherein the plurality of second brackets are adjustable brackets.

5. The adjustment device comprises:

5. The pulsed laser deposition apparatus of claim 4, further comprising a third adjustment component connected to the second bracket for adjusting a length of the second bracket in a third direction so as to adjust an inclination angle of the first bracket.

6. 5. The pulsed laser deposition apparatus of claim 4, wherein the plurality of second brackets are provided with a fourth adjustment part for adjusting the length of the second bracket in a third direction so as to adjust the inclination angle of the first bracket.

7. 6. The pulsed laser deposition apparatus of claim 5, wherein the first adjustment component, the second adjustment component, and / or the third adjustment component comprise high accuracy precision motors.

8. 8. The pulsed laser deposition apparatus of claim 7, wherein the first adjusting component, the second adjusting component and / or the third adjusting component are used to control a scanning path and a scanning speed of a laser beam generated by a laser on a target.

9. The deposition apparatus comprises: a reaction cavity; a target stage for mounting a target, and a substrate stage for mounting a substrate, the target stage and the substrate stage being disposed in opposition to each other within the reaction cavity; 2. The pulsed laser deposition apparatus of claim 1, wherein the laser scanning sputtering component controls the deposition content of corresponding components of the target in different deposition areas of the substrate by controlling a scanning speed of a scanning path of a laser beam to change a deposition time of different deposition areas of the substrate.

10. A plurality of targets having the same or different deposit components are installed on the target stage; A mask plate is provided above the target stage, forming a side wall above the target stage so as to separate plumes generated when adjacent targets among the plurality of targets are sputtered, and extending near the substrate stage so as to separate a plurality of deposition regions of the substrate; 10. The pulsed laser deposition apparatus of claim 9, wherein the mask plate and the substrate stage are moved relative to each other to vary exposure deposition times of different deposition regions of the substrate, thereby controlling deposition content of components corresponding to the multiple different targets in different deposition regions of the substrate, thereby forming a combined film of deposition components corresponding to the multiple targets on the substrate.

11. 11. The pulsed laser deposition apparatus of claim 10, wherein the combination films include linearly graded or non-linearly graded deposition composition combination films and multilayer heterojunction combination films in which deposition compositions are deposited in alternating layers.

12. The deposition apparatus comprises:

12. The pulsed laser deposition apparatus of claim 11, further comprising a control structure having one end fixedly connected to the target stage and another end connected to a mask plate for controlling the mask plate to move relative to the substrate stage.

13. 13. The pulsed laser deposition apparatus of claim 12, wherein the target stage and the substrate stage are stationary, and the mask plate is moved to vary deposition times for different deposition areas of the substrate.

14. The pulsed laser deposition apparatus according to claim 13, wherein the mask plate reciprocates along a direction in which a deposition component changes gradiently.

15. 13. The pulsed laser deposition apparatus of claim 12, wherein the control structure is also used to control the mask plate to move along a direction perpendicular to the substrate surface.

16. 13. The pulsed laser deposition apparatus of claim 11, wherein the substrate stage is stationary, and the target stage is moved, and the mask plate is moved with it, to vary deposition times in different deposition areas of the substrate.

17. The pulsed laser deposition apparatus of claim 11 , wherein the target stage reciprocates along a direction in which a deposition component changes gradiently.

18. 20. The pulsed laser deposition apparatus of claim 17, wherein the target stage and the mask plate are stationary, and the substrate stage is moved to vary deposition times for different deposition areas of the substrate.

19. 20. The pulsed laser deposition apparatus of claim 18, wherein the substrate stage reciprocates along a direction in which a deposition component changes gradiently.

20. 10. The pulsed laser deposition apparatus of claim 1 further comprising a laser located on said first bracket for generating a laser beam.

21. 21. The pulsed laser deposition apparatus of claim 20, wherein the laser has an indicator lamp generating an indicator beam parallel to the laser beam for adjusting and aiming the laser.

22. 21. The pulsed laser deposition apparatus of claim 20, wherein the wavelengths of the laser beam generated by the laser include 1064 nm, 532 nm, 355 nm, and 266 nm, and different wavelengths can be selected for automatic switching.

23. 21. The pulsed laser deposition apparatus of claim 20, wherein the lasers are turned on alternately or simultaneously.

24. The deposition apparatus comprises:

10. The pulsed laser deposition apparatus of claim 9, further comprising a motor unit located outside the reaction cavity, connected to the target stage and the substrate stage, for controlling movement of the target stage and the substrate stage.

25. 25. The pulsed laser deposition apparatus of claim 24, wherein the motor unit controls the target to rotate about its center so as to change a spot position of the laser beam on the target.

26. The base is a support frame connected to the adjustment device; 2. The pulsed laser deposition apparatus of claim 1, further comprising: a pulley located at a bottom of said support frame for moving said laser scanning sputtering components.

27. The pulley includes an open state and a locked state, In the open state, the laser scanning sputtering component is movable; 27. The pulsed laser deposition apparatus of claim 26, wherein in the locked state, the laser scanning sputtering component cannot move.

28. 27. The pulsed laser deposition apparatus of claim 26, further comprising a laser power supply secured to the support frame for providing power to the laser.

29. mounting at least one target on a target stage and a substrate on a substrate stage; employing at least one laser beam to impact the target to generate a deposit; and controlling a scanning speed of the scanning path of the laser beam to vary a deposition time of different deposition areas of the substrate, thereby controlling a deposition content of a corresponding component of the target in different deposition areas of the substrate, thereby forming a film on the substrate having a thickness that varies along any direction of the substrate surface.

30. after controlling a scanning speed of the scanning path of the laser beam to vary the deposition time of different deposition areas of the substrate; 30. The method of claim 29, further comprising forming a deposit of a plurality of different targets on the substrate by replacing targets and repeating the deposition process to obtain a combination film.

31. 30. The deposition method according to claim 29, wherein a plurality of targets are attached to the target stage, each of the targets corresponding to at least a portion of the deposition area of ​​the substrate, and adjacent targets are separated from each other by a mask plate.

32. the mask plate is fixed to a target stage so as to separate adjacent targets among the plurality of targets, the mask plate forming a side wall on the target stage; the mask plate extends adjacent to the substrate stage to separate a plurality of deposition regions on the substrate; 32. The method of claim 31, further comprising forming a deposition of the multiple targets on the substrate to obtain a combined film by controlling the deposition content of different corresponding components of the multiple targets in different deposition regions of the substrate by moving the mask plate and the substrate stage relative to each other to vary deposition times in different deposition regions of the substrate.

33. The deposition method according to any one of claims 29 to 32, characterized in that, when the scanning path of the laser beam corresponds to a radius or diameter of the substrate, the scanning speed of the laser beam in the scanning path is controlled to gradually increase and / or gradually decrease.

34. 34. The method of claim 33, wherein the deposit content on the substrate varies continuously along a radius or diameter of the substrate.

35. The deposition method according to any one of claims 29 to 32, characterized in that the substrate is rotated about its center so as to vary the deposition areas corresponding to the multiple targets.

36. 36. The method of claim 35, wherein the motion discipline in which the substrate rotates about its center includes motion directions including clockwise and counterclockwise rotation and motion speeds including uniform and non-uniform rotation.

37. 37. The method of claim 36, wherein the scanning path of the laser beam is along at least one direction of the surface of the target.

38. 38. The deposition method of claim 37, wherein the change discipline of the scanning speed of the laser beam in the scanning path includes at least one of an increase and a decrease.

39. 30. The deposition method of claim 29, wherein the laser beam includes a plurality of targets, and when a corresponding target among the plurality of targets is in a sputtering position facing the substrate, the plurality of laser beams collide with the corresponding target alternately or simultaneously.

40. 40. The deposition method of claim 39, wherein when a deposition area of ​​a first target of the multiple targets facing the substrate changes continuously, the number of deposits on the substrate changes with the continuous change in deposition area to form a first film having a continuously changing thickness.

41. 41. The deposition method of claim 40, wherein when a deposition area of ​​a second target of the multiple targets facing the substrate changes continuously, the number of deposits on the substrate changes with the continuous change in deposition area, forming a second film having a continuously changing thickness.

42. 42. The method of claim 41, further comprising: annealing the first film and the second film to form a third film of a mixed composition of the first film and the second film.

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