Integrated shower head

Abstract

A showerhead for a processing chamber includes a faceplate having a plurality of openings. A plurality of compartments are recessed into an upper surface of the faceplate. The showerhead includes a plurality of MEMS devices, each of which is disposed in a corresponding one of the plurality of compartments. A printed circuit board having a plurality of ports therethrough is coupled to each of the MEMS devices. Each of the MEMS devices is configured to regulate a flow of gas to each of the corresponding compartments through a corresponding one of the plurality of ports of the printed circuit board.

Description

[Technical field]

[0001]

[0001] Embodiments of the present disclosure relate generally to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to components, such as showerheads, of processing chambers for forming semiconductor devices. [Background technology]

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. During processing, the substrate is placed on a substrate support inside a process chamber. The interior of the process chamber is placed under a vacuum while the substrate is processed by exposure to process gases. Some processes involve etching away material from the substrate, while other processes involve depositing material onto the substrate. The uniformity of the material etched or deposited on the substrate can be affected by the distribution of process gases inside the process chamber. In some process chambers, a showerhead distributes the process gases. The pattern and size of the holes in the showerhead can be optimized for the distribution of a particular process gas for a particular process operation, but not for the distribution of process gases for different process gases or different process operations.

[0003]

[0003] Therefore, there is a need for an improved process chamber that facilitates effective control over the distribution of process gases. Summary of the Invention

[0004]

[0004] The present disclosure generally relates to components, such as showerheads, of substrate processing chambers for forming semiconductor devices. In one embodiment, a showerhead for a processing chamber includes a faceplate. The faceplate includes a bottom surface, a top surface, and a plurality of openings extending from the top surface to the bottom surface. A printed circuit board is coupled to the faceplate. The showerhead further includes a plurality of MEMS devices coupled to the printed circuit board, each MEMS device associated with one or more unique openings of the plurality of openings and configured to regulate gas flow through the corresponding one or more unique openings. The showerhead further includes a plurality of local controllers coupled to the printed circuit board, each local controller configured to control operation of a corresponding MEMS device of the plurality of MEMS devices independently from operation of other MEMS devices of the plurality of MEMS devices.

[0005] In another embodiment, a showerhead for a processing chamber includes a printed circuit board including a plurality of ports extending therethrough. The showerhead further includes a faceplate. The faceplate includes a plurality of MEMS modules coupled to the printed circuit board. Each MEMS module includes a body, a sidewall extending below the body to a base, a base including one or more holes, and a MEMS device operable to control gas flow through at least one of the plurality of ports.

[0006] In another embodiment, a processing chamber includes a chamber body and a showerhead disposed within the chamber body. The faceplate includes a bottom surface, a top surface, a plurality of compartments recessed into the top surface, and a plurality of openings extending from each compartment to the bottom surface. The showerhead further includes a plurality of MEMS devices, each MEMS device in a corresponding one of the plurality of compartments and configured to regulate a gas flow to each corresponding compartment. The showerhead further includes a printed circuit board coupled to the top surface of the faceplate and to each MEMS device. The showerhead further includes a controller coupled to the printed circuit board and configured to control operation of at least one MEMS device of the plurality of MEMS devices independently from operation of other MEMS devices of the plurality of MEMS devices. [Brief description of the drawings]

[0007]

[0007] In order that the above-mentioned features of the present disclosure may be understood in detail, a more detailed description of the present disclosure, briefly summarized above, may be had by reference to the embodiments. Some of the embodiments are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings show only exemplary embodiments, and therefore should not be considered as limiting the scope of the embodiments, since the present disclosure may admit of other equally effective embodiments.

[0008] [Figure 1] FIG. 1 is a schematic cross-sectional view of a processing chamber. [Figure 2A]

[0009] 1 is a top isometric view of an exemplary MEMS device. [Figure 2B]

[0010] FIG. 2B is a bottom isometric view of the MEMS device of FIG. 2A. [Fig. 2C-2D]

[0011] 2C and 2D are top views of the MEMS device of FIG. 2A. [Figure 2E]

[0012] 2 is a top view of another exemplary MEMS device. [Diagram 3]

[0013] FIG. 1 is a schematic cross-sectional side view of an exemplary showerhead. [Figure 4]

[0014] 1A and 1B are schematic cross-sectional side views of an exemplary showerhead. [Diagram 5]

[0015] 1A and 1B are schematic cross-sectional side views of an exemplary showerhead. [Figure 6]

[0016] 4A to 4G are schematic cross-sectional side views of the configuration of a MEMS module. [Figure 7]

[0017] FIG. 2 is a schematic plan view of a face plate of the showerhead.

[0009]

[0018] For ease of understanding, wherever possible, identical reference numerals have been used to designate identical elements that are common to several figures. It is envisioned that elements and features of one embodiment may be beneficially incorporated in one or more other embodiments without further recitation. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010]

[0019] The present disclosure relates to components, such as showerheads, of processing chambers for forming semiconductor devices.Embodiments of the present disclosure provide showerheads that can be easily configured to be used with any one or more of a number of gases used in processing substrates.Exemplary gases include silicon-containing gases, oxygen-containing gases, nitrogen-containing gases, hydrogen-containing gases, argon-containing gases, and metal-containing gases.

[0011]

[0020] FIG. 1 is a schematic cross-sectional view of a processing chamber 100. As shown, the processing chamber 100 is configured as a plasma-enhanced chemical vapor deposition (PECVD) chamber, although in some embodiments, the processing chamber 100 may be configured to perform other plasma-enhanced processing operations (e.g., etching or physical vapor deposition) or plasma-free processing operations (e.g., chemical vapor deposition). The processing chamber 100 features a chamber body 102, a substrate support 104 disposed within the chamber body 102, and a lid 106 coupled to the chamber body 102 and confining the substrate support 104 within a processing space 120. The substrate support 104 is configured to support a substrate 154 thereon during processing. The substrate 154 is provided to the processing space 120 through an opening 126. Although the embodiment of FIG. 1 is directed to a PECVD (plasma-enhanced chemical vapor deposition) chamber, the lid 106 and substrate support 104 of FIG. 1 may be used in other processing chambers that utilize plasma generated within the processing space 120. Additionally, the lid 106 and substrate support 104 of FIG. 1 may be used in other processing chambers that do not utilize a plasma generated within the processing space 120 .

[0012]

[0021] As shown, the showerhead 112 includes or acts as an electrode and is coupled to a power source 128 through a matching network. The power source 128 is a radio frequency (RF) power source electrically coupled to the electrode 108. Further, the power source 128 provides from about 100 watts to about 3,000 watts at a frequency from about 50 kHz to about 13.6 MHz. In some embodiments, the power source 128 can be pulsed during various operations. The electrode 108 and the power source 128 facilitate control of the plasma formed within the process space 120.

[0013]

[0022] The substrate support 104 may include or be formed of one or more metallic or ceramic materials. Exemplary metallic or ceramic materials include one or more metals, metal oxides, metal nitrides, metal oxynitrides, or any combination thereof. For example, the substrate support 104 may include or be formed of aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, or any combination thereof.

[0014]

[0023] As shown, the electrode 122 is embedded within the substrate support 104, but may alternatively be coupled to a surface of the substrate support 104. The electrode 122 is coupled to a power source 136. It is envisioned that the power source 136 may be DC power, pulsed DC power, radio frequency (RF) power, pulsed RF power, or any combination thereof. The power source 136 is configured to drive the electrode 122 with a drive signal that generates a plasma within the process space 120. It is envisioned that the drive signal may be one of a DC signal and a variable voltage signal (e.g., an RF signal). Additionally, the electrode 122 may alternatively be coupled to a power source 128 instead of the power source 136, and the power source 136 may be omitted.

[0015]

[0024] A plasma is generated in the process space 120 via power supply 128 and power supply 136. An RF field is generated by driving at least one of the electrode of the showerhead 112 and the electrode 122 with a drive signal that facilitates the formation of a plasma within the process space 120. The presence of the plasma facilitates processing of the substrate 154, such as depositing a film on the surface of the substrate 154 or etching material from the surface of the substrate 154.

[0016]

[0025] The exhaust port 156 is coupled to a vacuum pump 157. The vacuum pump 157 removes excess process gases or by-products from the processing space 120 via the exhaust port 156 during and / or after processing.

[0017]

[0026] The gas supply 111 includes one or more gas sources. The gas supply 111 is configured to deliver one or more gases from the one or more gas sources through the showerhead 112 to the process space 120. Each of the one or more gas sources may be selected from the group consisting of silane, disilane, tetraethylorthosilicate (TEOS), germane, metal halides (e.g., titanium tetrachloride, tantalum pentachloride, tungsten hexafluoride), organometallics (e.g., tetrakis(dimethylamido)titanium, pentakis(dimethylamido)tantalum), ammonia, oxygen (O2), hydrogen peroxide, hydrogen, diborane, chlorine (Cl2), sulfur hexafluoride, and hydrocarbons (collectively C1, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19, C20, C22, C30, C40, C51, C52, C61, C72, C73, C74, C75, C85, C96, C97, C98, C99, C101, C112, C123, C132, C143, C144, C155, C156, C157, C165, C176, C186, C197, C198, C199, C202, C203, C204, C205, C206, C207, C208, C2104, C2115, C222, C232, C243, C255, C256, C305, C310, C322, C310, C323, C33 x H y 1. In some embodiments, the process gas may be ionized to form a plasma within the processing space 120. For example, to process the substrate 154, one or more of a carrier gas and an ionizable process gas are provided to the processing space 120. When processing a 300 mm substrate, the process gas is introduced into the processing chamber 100 at a flow rate of about 6500 sccm to about 8000 sccm, about 100 sccm to about 10,000 sccm, or about 100 sccm to about 1000 sccm. Alternatively, other flow rates may be utilized. In some embodiments, a remote plasma source may be used to deliver the plasma to the processing chamber 100, and the remote plasma source may be coupled to the gas source 111.

[0018]

[0027] The showerhead 112 features openings 118 for admitting one or more process gases from a gas supply 111 into the processing space 120. Process gases are supplied to the processing chamber 100 via a gas supply 114, where the process gases enter a plenum 116 before flowing through the openings 118. In some embodiments, different process gases that flow simultaneously during a processing operation enter the processing chamber 100 via separate gas supplies and separate plenums before entering the processing space 120 through the showerhead 112.

[0019]

[0028] Gas flow through the openings 118 of the showerhead 112 is regulated by one or more microelectromechanical systems (MEMS devices) disposed within the showerhead 112. In some embodiments, it is contemplated that gas flow through individual openings 118 and / or clusters of openings 118 may be regulated by MEMS devices. In some embodiments, it is contemplated that gas flow through all of the openings 118 is regulated by multiple MEMS devices. In one example, each MEMS device regulates gas flow through one or more openings 118 such that gas flow through any single opening 118 is regulated by a corresponding MEMS device. It is contemplated that regulating gas flow with the MEMS devices includes allowing maximum flow of gas through individual openings 118 and / or clusters of openings 118. It is contemplated that regulating gas flow with the MEMS devices includes preventing all flow of gas through individual openings 118 and / or clusters of openings 118. It is envisioned that regulating gas flow with a MEMS device includes controlling the flow of gas through individual openings 118 and / or clusters of openings 118 so that the flow is above zero and below the maximum flow of gas through the individual openings 118 and / or clusters of openings 118.

[0020]

[0029] 2A-2D illustrate an exemplary MEMS device 200. FIG. 2A is a top isometric view of the MEMS device 200, and FIG. 2B is a bottom isometric view of the MEMS device 200. The MEMS device 200 includes a body 202 having an orifice 204 therethrough. Although illustrated as substantially rectangular, it is contemplated that the orifice 204 may have any suitable cross-sectional shape, such as circular, elliptical, triangular, and the like. Additionally, in some embodiments, the orifice 204 may include multiple orifices. Additionally, one variation of the MEMS device 200 may have an orifice 204 having a cross-sectional size that differs from the cross-sectional size of the orifice 204 of another variation of the MEMS device 200.

[0021]

[0030] A skirt portion 206 extends from the body 202 to the bottom of the MEMS device 200. A valve member 210 is attached to the body 202 and regulates the flow of fluid through the orifice 204. The valve member 210 is electrically conductive. In some embodiments, the valve member 210 is made of metal. The valve member 210 passes an electrical current between the contacts 230, 231 to which the valve member 210 is connected. As shown, in some embodiments, the MEMS device 200 includes contacts 232, 233 configured to connect to a heater, e.g., a wire that passes an electrical current to induce heating. In some such embodiments, the heater is integrated into the MEMS device 200. Alternatively, the heater may be a separate component configured to be plugged into the MEMS device 200. In some embodiments, the heater may be omitted.

[0022]

[0031] As shown, in some embodiments, the MEMS device 200 includes contacts 234, 235 configured to connect to a sensor 236. In some such embodiments, the sensor 236 is integrated into the MEMS device 200. Alternatively, the sensor 236 may be a separate component configured to plug into the MEMS device 200. It is contemplated that the sensor 236 may be configured to measure one or more of pressure, temperature, or flow rate. In one example, the measurement of the flow rate of the fluid through the orifice 204 is derived, at least in part, from a measurement of pressure obtained from the sensor 236. In some embodiments, the sensor 236 may be omitted.

[0023]

[0032] 2C is a top view of the MEMS device 200. The valve member 210 of the MEMS device 200 includes a first section 212 and a second section 214. At an end 216 of the valve member 210 near the orifice 204, the first section 212 and the second section 214 are connected to one another. At the opposite end 218 of the valve member 210, the first section 212 is connected to a contact 230 and the second section 214 is connected to a contact 231, but the first section 212 and the second section 214 are not connected to one another. The first section 212 is nominally thicker than the second section 214, but contains a void 220. Although the void 220 is illustrated as two connected rectangles, it is envisioned that the void 220 may have or include any suitable shape, such as one or more triangles, one or more squares, one or more circles, one or more ovals, or any other shape. The void 220 divides the first section into a relatively thick portion 222 and one or more relatively thin portions 224. The end 226 of the first section 212 is relatively thick and is disposed at the end 216 proximate to the orifice 204. In the illustrated configuration, the orifice 204 is at least partially uncovered by the end 226, thereby allowing gas to flow through the orifice 204. The end 226 is configured to at least partially conceal the orifice 204 during operation of the MEMS device 200.

[0024]

[0033] 2D is a top view of the MEMS device 200 as an electric current passes through the valve member 210. Because the first section 212 and the second section 214 are connected to each other at the end 216 but not at the end 218, a voltage applied to the contacts 230, 231 causes an electric current to flow through the first section 212 and the second section 214. The thickness of the first section 212 and the second section 214 affects the electrical resistance of the first section 212 and the second section 214 (thicker sections have lower resistance). When an electric current flows through the valve member 210, the second section 214 and the thinner portion 224 of the first section 212 experience more heating than one or more of the thicker portions 222 of the first section 212.

[0025]

[0034] Due to the differential heating, one or more of the thicker portions 222 of the first section 212 thermally expand less than the second section 214 and the thinner portions 224 of the first section 212. Thus, the first section 212 does not stretch linearly as much as the second section 214. Because the first section 212 and the second section 214 are connected to one another at the end 216, the stretching of the second section 214 causes the first section 212 to easily deform into an "S" shape due to the void 220. The end 216 bends in the direction of the arrow 228, such that the end 226 of the first section 212 hides at least a portion of the orifice 204. In some embodiments, it is contemplated that the end 226 will bend to such an extent that the end 226 completely hides the orifice 204. In some such embodiments, the end 226 completely blocks the passage of gas through the orifice 204.

[0026]

[0035] 2D , in some embodiments, the stretching of the valve member 210 due to heating is compensated for by the first section 212 deforming into an "S" shape. In this way, the orientation of the end 226 is maintained during movement and the end 226 can completely hide the orifice 204. However, in some embodiments, the end 226 does not completely hide the orifice 204, but only a portion of the orifice 204 when a current is applied to the valve member 210.

[0027]

[0036] When the magnitude of the current passing through the valve member 210 is reduced or the current is stopped altogether, the valve member 210 cools, undergoes thermal contraction, and moves back toward the position shown in FIG. 2C. Thus, the position of the end 226 relative to the orifice 204 is controlled by varying the current passing through the valve member 210. As a result, the amount of fluid flow through the orifice 204 is controlled by adjusting the magnitude of the current passing through the valve member 210. In one embodiment, the orifice 204 is completely uncovered when the current through the valve member 210 is zero, the orifice 204 is completely covered by the end 226 when the current through the valve member 210 is at a predetermined maximum value, and the orifice 204 is partially covered by the end 226 when the current through the valve member 210 is a given percentage of the predetermined maximum value. In one such embodiment, the flow rate of fluid through the orifice 204 is maximum when the current through the valve member 210 is zero, the flow through the orifice 204 is zero when the current through the valve member 210 is at a predetermined maximum value, and the flow rate of fluid through the orifice 204 is a given percentage of the maximum value when the current through the valve member 210 is a given percentage of the predetermined maximum value.

[0028]

[0037] In some embodiments, the current applied through the valve member 210 can be adjusted in steps to provide one or more intermediate positions of the end 226 of the valve member 210 between when the orifice 204 is completely uncovered and when the orifice 204 is completely hidden. In such embodiments, the MEMS device 200 provides intermediate flow rates of fluid between zero flow rate and a maximum flow rate corresponding to each intermediate position of the end 226. In one example, the resulting flow rate of fluid through the orifice 204 can be varied in steps (e.g., in 5% increments, 10% increments, or 20% increments) from zero to a maximum flow rate.

[0029]

[0038] In some embodiments, the current applied through the valve member 210 can be continuously varied to provide continuously varying positions of the end 226 of the valve member 210 between a state in which the orifice 204 is completely uncovered and a state in which the orifice 204 is completely hidden. In such embodiments, the MEMS device 200 continuously varies the flow rate of fluid through the orifice 204 between zero flow and a maximum flow rate, such that the flow rate corresponds to intermediate positions of the end 226.

[0030]

[0039] In some embodiments, the current applied through the valve member 210 can be stepped over a portion of the range from zero to the maximum current and can be varied continuously over another portion of the range from zero to the maximum current. In such embodiments, the resulting flow rate of fluid through the orifice 204 can be stepped over a portion of the range from zero to the maximum flow rate and can be varied continuously over another portion of the range from zero to the maximum flow rate. In one example, the resulting flow rate of fluid through the orifice 204 can be stepped from zero to 20% of the maximum flow rate and can be varied continuously from 20% to the maximum flow rate.

[0031]

[0040] 2A-2D show the MEMS device 200 configured with the orifice 204 normally open with no current applied, in some embodiments, the MEMS device 200 may be configured with the orifice 204 normally closed with no current applied. In such embodiments, the starting position of the valve member 210 includes an end 226 that conceals the orifice 204. In one example, the end 226 completely blocks the passage of gas through the orifice 204. Application of a current through the valve member 210 causes the distal end 216 of the valve member to deflect, moving the end 226 so that at least a portion of the orifice 204 is uncovered, thereby allowing gas to flow through the orifice 204.

[0032]

[0041] Any of the configurations of the MEMS devices of the present disclosure may include MEMS devices configured to have normally open orifices. Any of the configurations of the MEMS devices of the present disclosure may include MEMS devices configured to have normally closed orifices. Any of the configurations of the MEMS devices of the present disclosure may include a combination of MEMS devices configured to have normally open orifices and MEMS devices configured to have normally closed orifices.

[0033]

[0042] 2E is a top view of an exemplary MEMS device 250. MEMS device 250 is similar to MEMS device 200, but includes two orifices 254A, 254B and two valve members 260A, 260B. Valve member 260A is connected to contacts 280A, 281A to regulate the flow of fluid through orifice 254A. Valve member 260B is connected to contacts 280B, 281B to regulate the flow of fluid through orifice 254B. In some embodiments, a dedicated heater is associated with each orifice 254A, 254B; the heater associated with orifice 254A is connected to contacts 282A, 283A, and the heater associated with orifice 254B is connected to contacts 282B, 283B. As described above, sensors (FIG. 2B, 236) are connected to contacts 284, 285. In some embodiments, it is envisioned that valve member 260A and valve member 260B can operate independently, and thus orifice 254A and orifice 254B are suitable for connection to separate gas sources.

[0034]

[0043] It is envisioned that the surfaces of each component of the MEMS devices 200, 250 may be coated with one or more suitable materials to inhibit corrosion and / or reduce the likelihood that the valve members of the MEMS devices will stick in place and become inoperable. Example coating materials include silicon carbide, parylene, hydrophobic anti-stiction films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO2), and other suitable materials. x ), and titanium oxide (e.g., TiO2).

[0035]

[0044] 3 is a schematic cross-sectional side view of an example showerhead 300. It is envisioned that the configuration of the showerhead 300 may be used as the showerhead 112 of FIG. The showerhead 300 includes a faceplate 310 having openings 318 through which gases flow from the plenum 116 into a processing chamber, such as the processing space of the processing chamber 100 (FIG. 1, 120). An upper surface 312 of the faceplate 310 includes compartments 314. As shown, each compartment 314 is a recessed version of the upper surface 312. In some embodiments, the compartments 314 may not be recessed versions of the upper surface 312. A cluster of openings 318 is associated with each compartment 314.

[0036]

[0045] Associated with each compartment 314 is a MEMS device 320. In embodiments where the compartments 314 are recesses in the top surface 312 of the faceplate 310, as shown, at least a portion of the MEMS device 320 may be disposed within the corresponding compartment 314. It is envisioned that the MEMS devices 320 may be configured similarly to the MEMS device 200 or the MEMS device 250. Each MEMS device 320 includes an orifice 322, a valve member 324, a heater 326, and a sensor 328, as described above for the MEMS device 200 in schematic form. Each MEMS device 320 is coupled to a printed circuit board (PCB) 330. In some embodiments, each MEMS device 320 is soldered to the PCB 330. In some such embodiments, the solder surrounds the orifice 322 and provides a seal between the PCB 330 and each MEMS device 320. Each contact of each MEMS device 320 is connected to the PCB 330. The sensor 328, heater 326, and valve member 324 of each MEMS device 320 receive power via a PCB 330. The PCB 330 is coupled to a master controller 350 for transmission of power and / or control signals and / or telemetry to and from each MEMS device 320.

[0037]

[0046] The PCB 330 includes a port 332 associated with each MEMS device 320. When the valve member 324 of the MEMS device 320 allows gas to flow through the corresponding orifice 322, gas in the plenum 116 can flow through the corresponding port 332 of the PCB 330, through the orifice 322, and into the corresponding compartment 314 of the faceplate 310. In some embodiments, the gas is heated by a heater 326. The gas flows from the compartment 314 through a corresponding opening 318 in the faceplate 310 and into the processing space (120 in FIG. 1 ) of the processing chamber.

[0038]

[0047] As shown, in some embodiments, the showerhead 300 may include one or more local controllers 329. Each local controller 329 may be associated with a corresponding single MEMS device 320 or a corresponding group of MEMS devices 320 and programmed to control such MEMS devices 320. In one example, each local controller 329 includes an application specific integrated circuit (ASIC). In some embodiments, each local controller 329 may be integrated into the MEMS device 320. As shown, in some embodiments, each local controller 329 may be coupled to the PCB 330 separately from the MEMS device 320. In some embodiments, the local controller 329 includes an electromagnetic shield. It is contemplated that to inhibit corrosion, the surface of the local controller 329 may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, a hydrophobic anti-stiction film applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO x ), and titanium oxide (e.g., TiO2).

[0039]

[0048] In some embodiments, the local controllers 329 receive commands from the master controller 350 via the PCB 330. It is envisioned that the commands may be in the form of signals that are addressed to correspond to a particular device, e.g., a particular MEMS device 320. Each local controller 329 is programmed to recognize command signals that are addressed to correspond to a device under the jurisdiction of the local controller 329, and controls the device according to the received command. In some embodiments, each local controller 329 is programmed to ignore command signals that are not addressed to correspond to any of the devices under the jurisdiction of the local controller 329.

[0040]

[0049] In some embodiments, each MEMS device 320 is independently addressable via a corresponding local controller 329 such that the operation of each MEMS device 320 can be controlled without changing the operational state of any other MEMS devices 320. In some embodiments, each MEMS device 320 is assigned to one or more groups of MEMS devices 320, and each group of MEMS devices 320 is independently addressable via one or more corresponding local controllers 329. In such embodiments, the operation of each MEMS device 320 in a defined group can be controlled without changing the operational state of any other MEMS devices 320 not in the defined group.

[0041]

[0050] In one embodiment, each MEMS device 320 or group of MEMS devices 320 is associated with a separate zone of the faceplate 310, as illustrated by, for example, any zone 710 of the faceplate 700 in FIG. 7. Control of each MEMS device 320, or group of MEMS devices 320, facilitates adjustment of gas flow distribution across the zones of the faceplate 310, independent of the other MEMS devices of the showerhead 300.

[0042]

[0051] In one embodiment, the cluster of MEMS devices 320 in the center of the faceplate 310 is assigned to “Group A” and the cluster of MEMS devices 320 at the edge of the faceplate 310 is assigned to “Group B.” The MEMS devices 320 in Group A may be controlled independently from the MEMS devices in Group B. Additionally, the MEMS devices 320 in Group A may be controlled via commands addressed to that group, and the MEMS devices 320 in Group B are not responsive to commands addressed to Group A. In one such embodiment, the MEMS devices 320 in Groups A and B may be controlled to adjust the amount of process gas delivered to the center of a substrate, e.g., substrate 154, compared to adjusting the amount of process gas delivered to the edge of the substrate.

[0043]

[0052] In another embodiment, a process chamber, such as process chamber 100, has an off-center exhaust port (156 in FIG. 1) that creates a change in gas flow at different locations within the process volume (120 in FIG. 1) of the process chamber. Such azimuthal changes in gas flow can result in non-uniform processing of the substrate, such as variations in film thickness across the substrate. In one such embodiment, the cluster of MEMS devices 320 near the exhaust port is assigned to “Group C” and the cluster of MEMS devices 320 away from the exhaust port is assigned to “Group D”. The MEMS devices 320 in Group C can be controlled independently from the MEMS devices in Group D. Additionally, the MEMS devices 320 in Group C can be controlled via commands addressed to that group, and the MEMS devices 320 in Group D do not respond to commands addressed to Group C. In one such embodiment, the MEMS devices 320 of groups C and D can be controlled to adjust the amount of process gas delivered to a portion of the substrate closer to the exhaust port relative to the amount of process gas delivered to a portion of the substrate further from the exhaust port.

[0044]

[0053] In some embodiments, one or more MEMS devices 320 may be controlled according to a hierarchy of commands such that MEMS devices 320 that are not within a particular hierarchical set of MEMS devices 320 are not affected by operating commands addressed to MEMS devices 320 within the particular hierarchical set. In one example, the particular MEMS device 320 is assigned to a small group of MEMS devices ("Group E1") that is part of a larger group of MEMS devices ("Group E"). In this example, the particular MEMS device 320 is also assigned to a different group of MEMS devices ("Group F") that includes other MEMS devices that are not within Group E. The particular MEMS device 320 may be controlled by commands addressed only to that particular MEMS device 320, and none of the other MEMS devices respond to those commands. The particular MEMS device 320 may also be controlled by commands addressed only to Group E1. All MEMS devices in Group E1, including the particular MEMS device 320, respond to those commands, but none of the other MEMS devices respond to those commands. A particular MEMS device 320 can also be controlled by commands addressed to only group E. All MEMS devices in group E, including that particular MEMS device 320, respond to those commands, but none of the other MEMS devices respond to those commands. A particular MEMS device 320 can also be controlled by commands addressed to only group F. All MEMS devices in group F, including that particular MEMS device 320, respond to those commands, but none of the other MEMS devices, including MEMS devices in group E1 or group E, respond to those commands, unless those other MEMS devices are also assigned to group F.

[0045]

[0054] In embodiments in which local controller 329 is omitted, master controller 350 operates each MEMS device 320 via conductive traces embedded in PCB 330 .

[0046]

[0055] 4A is a schematic cross-sectional side view of an example showerhead 400A. It is envisioned that the configuration of the showerhead 400A can be used as the showerhead 112 of FIG. 1. The showerhead 400A includes a manifold 440 disposed on a PCB 430. The manifold 440 includes a first conduit 442 for the passage of a first gas and a second conduit 444 for the passage of a second gas. It is envisioned that the first conduit 442 is isolated from the second conduit 444 so that the first gas and the second gas do not mix in the manifold 440. A first duct 446 from the first conduit 442 is aligned with the first port 432 in the PCB 430. A second duct 448 from the second conduit 444 is aligned with the second port 434 in the PCB 430. An interface 438 between the manifold 440 and the PCB 430 is sealed, for example by bonding the manifold 440 to the PCB 430, to prevent mixing of the first gas and the second gas at the interface 438.

[0047]

[0056] In some embodiments, manifold 440 includes one or more additional conduits and corresponding ducts configured to carry one or more additional gases. In such embodiments, the one or more additional conduits may be isolated from first conduit 442 and second conduit 444. It is further envisioned that PCB 430 may include additional ports aligned with the additional ducts.

[0048]

[0057] The showerhead 400A includes a faceplate 410 having openings 418 through which gases enter a processing chamber, such as the processing space of processing chamber 100 (120 in FIG. 1). As shown, in some embodiments, a manifold 440 and a PCB 430 are coupled to the faceplate 410 by one or more fasteners 416, such as screws or bolts. A top surface 412 of the faceplate 410 includes compartments 414. As shown, each compartment 414 is a recessed version of the top surface 412. In some embodiments, the compartments 414 need not be recessed versions of the top surface 412. Each compartment 414 has a cluster of openings 418 associated with it.

[0049]

[0058] A spacer 460 is associated with each compartment 414. In embodiments where the compartments 414 are recesses of the top surface 412 of the face plate 410, as shown, at least a portion of the spacer 460 may be disposed within the corresponding compartment 414. Each spacer 460 includes a sidewall 462 and a floor 464. The illustrated sidewall 462 extends below the floor 464 to form a shroud 466, although in some embodiments, the shroud 466 may be omitted. Holes 468 in the floor 464 facilitate communication of gas to the openings 418 of the face plate 410. As shown, in some embodiments, a diffuser 470 is disposed above the holes 468. The diffuser 470 may promote an even distribution of gas through the holes 468. In some embodiments, the diffuser 470 filters out particles entrained in the gas. Exemplary diffusers 470 include mesh (e.g., sintered mesh), porous metal filters, or foam (e.g., porous PTFE foam), etc. In some embodiments, diffuser 470 may be omitted.

[0050]

[0059] The sidewalls 462 of the spacers 460 extend above the floor 464 to the PCB 430. As shown, in some embodiments, a gasket 472 seals the interface between the spacers 460 and the PCB 430. The gaskets 472 may be made of any suitable material capable of forming a pressure seal and resistant to chemical attack, such as an elastomeric / thermoplastic material (e.g., FKM type materials, including PVDF in closed cell foam form, e.g., polyvinylidene fluoride (PVDF)). Each spacer 460 encloses a void space 474 between the PCB 430 and each corresponding compartment 414. Ports 432, 434 of the PCB 430 convey gas into the void space 474 enclosed by each spacer 460.

[0051]

[0060] To inhibit corrosion, it is envisioned that the spacers 460 may be fabricated from a corrosion-resistant material, for example, a ceramic or a metal such as titanium. Additionally or alternatively, the surface of the spacers 460 may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, a hydrophobic anti-stiction film applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO2), and other suitable materials. x ), and titanium oxide (e.g., TiO2).

[0052]

[0061] It is envisioned that the cluster of MEMS devices in showerhead 400A may be controlled in a manner similar to the embodiments described above with respect to the cluster of MEMS devices 320 in showerhead 300.

[0053]

[0062] 4A illustrates three example configurations in which one or more MEMS devices 420, 421, 422, 423 with spacers 460 mounted on a PCB 430 may be associated with each compartment 414 of a faceplate 410. Each pairing of one or more MEMS devices 420, 421, 422, 423 with a corresponding compartment 414 can be considered an individual unit, as described below.

[0054]

[0063] In the first unit 482, the PCB 430 includes a port 432 aligned with the first duct 446 of the manifold 440, but does not include a port corresponding to the second duct 448 of the manifold 440. As a result, the first unit 482 is configured to manage gas supplied through the first conduit 442 of the manifold 440, but is not configured to manage gas supplied through the second conduit 444 of the manifold 440. However, in alternative embodiments, the first unit 482 may be configured to manage gas supplied through the second conduit 444 of the manifold 440, but may not be configured to manage gas supplied through the first conduit 442 of the manifold 440. In such embodiments, the PCB 430 includes a port aligned with the second duct 448 of the manifold 440, but does not include a port corresponding to the first duct 446 of the manifold 440.

[0055]

[0064] The MEMS device 420 within the void space 474 is coupled to the PCB 430 to regulate the gas flow through the port 432 of the PCB 430. It is envisioned that the MEMS device 420 may be configured similarly to the MEMS device 200. The MEMS device 420 includes an orifice 451 and a valve member 452. In some embodiments, the MEMS device 420 is soldered to the PCB 430. In some such embodiments, the solder surrounds the orifice 451 and provides a seal between the PCB 430 and the MEMS device 420. In some embodiments, the MEMS device 420 includes a sensor, such as the sensor 236 (FIG. 2B). In some embodiments, a sensor separate from the MEMS device 420 is coupled to the PCB 430 within the void space 474. Such a sensor may measure any one or more of pressure, temperature, or flow rate. In some embodiments, the MEMS device 420 includes a heater. In some embodiments, as shown, the heater 424, which is separate from the MEMS device 420, is coupled to the PCB 430 within the void space 474. The sensors, heaters, and valve members associated with each MEMS device 420 and the heater 424 (if present) receive power via the PCB 430.

[0056]

[0065] As shown in first unit 482, in some embodiments, local controller 429 can be associated with MEMS device 420 and programmed to control the MEMS device. In one example, local controller 429 includes an application specific integrated circuit (ASIC). In some embodiments, local controller 429 is integrated with MEMS device 420. In some embodiments, local controller 429 is coupled to PCB 430 separately from MEMS device 420. In some embodiments, local controller 429 includes an electromagnetic shield. To inhibit corrosion, a surface of local controller 429 can be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, hydrophobic anti-stiction films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO2), and the like. x ), and titanium oxide (e.g., TiO2).

[0057]

[0066] In embodiments including a local controller 429, the local controller 429 controls the operation of the MEMS device 420 and / or the heater 424. In some embodiments, the local controller 429 receives commands from the master controller 450 via the PCB 430. It is envisioned that the commands may be in the form of signals addressed to correspond to a particular device, e.g., a particular MEMS device 420 or heater 424. The local controller 429 in the first unit 482 is programmed to recognize command signals addressed to correspond to a device in the first unit 482 (e.g., the MEMS device 420 or the heater 424) and controls the device according to the received command. In some embodiments, the local controller 429 is programmed to ignore command signals that are not addressed to correspond to any of the devices under the jurisdiction of the local controller 429, e.g., a device in the first unit 482. In some embodiments, the local controller 429 may be programmed to control one or more devices not in the first unit 482. In one embodiment, the local controller 429 is programmed to control one or more MEMS devices in one or more units in addition to controlling the MEMS device 420 and heater 424 of the first unit 482.

[0058]

[0067] In some embodiments, each device in the first unit 482 is independently addressable via a corresponding local controller 429 such that the operation of each device in the first unit 482 can be controlled without changing the operational state of any other device in the showerhead 400A. In some embodiments, each device in the first unit 482 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers 429. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 400A that is not in the defined group.

[0059]

[0068] In embodiments in which local controller 429 is omitted, master controller 450 operates MEMS device 420 and heater 424 via conductive traces embedded in PCB 430 .

[0060]

[0069] In the second unit 484, the PCB 430 includes a first port 432 aligned with a first duct 446 of the manifold 440 and a second port 434 aligned with a second duct 448 of the manifold 440. As a result, the second unit 484 is configured to manage gas supplied via a first conduit 442 of the manifold 440 and a second conduit 444 of the manifold 440.

[0061]

[0070] A first MEMS device 421 in a void space 474 of the second unit 484 is coupled to the PCB 430 to regulate a gas flow through a first port 432 of the PCB 430. A second MEMS device 422 in a void space 474 of the second unit 484 is coupled to the PCB 430 to regulate a gas flow through a second port 434 of the PCB 430. It is envisioned that each MEMS device 421, 422 may be configured similarly to the MEMS device 200. The MEMS device 421 includes an orifice 425 and a valve member 426. The MEMS device 422 includes an orifice 427 and a valve member 428. In some embodiments, each MEMS device 421, 422 is soldered to the PCB 430. In some such embodiments, solder surrounds each orifice 425, 427 and provides a seal between the PCB 430 and each MEMS device 421, 422. In some embodiments, at least one of the MEMS devices 421, 422 includes a sensor, such as sensor 236 (FIG. 2B). In some embodiments, a sensor separate from the MEMS devices 421, 422 is coupled to the PCB 430. Such a sensor may measure any one or more of pressure, temperature, or flow rate. In some embodiments, each MEMS device 421, 422 includes a heater. In some embodiments, a heater separate from the MEMS devices 421, 422 (e.g., heater 424 of the first unit 482) is coupled to the PCB 430.

[0062]

[0071] In some embodiments, the second unit 484 includes a local controller, such as the local controller 429 of the first unit 482. In such embodiments, the local controller controls the operation of at least one device in the second unit 484 (e.g., the MEMS devices 421, 422 and / or a separate heater, if present). In one example, the local controller is integrated into one of the MEMS devices 421, 422. In another example, the local controller is coupled to the PCB 430 separately from the MEMS devices 421, 422.

[0063]

[0072] In some embodiments, each device in the second unit 484 is independently addressable via a corresponding local controller 429 such that the operation of each device in the second unit 484 can be controlled without changing the operational state of any other device in the showerhead 400A. In some embodiments, each device in the second unit 484 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers 429. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 400A that is not in the defined group.

[0064]

[0073] In the third unit 486, the PCB 430 includes a first port 432 aligned with a first duct 446 of the manifold 440 and a second port 434 aligned with a second duct 448 of the manifold 440, such that the third unit 486 is configured to manage gas supplied through a first conduit 442 of the manifold 440 and a second conduit 444 of the manifold 440.

[0065]

[0074] The MEMS device 423 in the void space 474 of the third unit 486 is coupled to the PCB 430 to regulate the gas flow through a first port 432 of the PCB 430 and a second port 434 of the PCB 430. It is envisioned that the MEMS device 423 may be configured similarly to the MEMS device 250. The MEMS device 423 includes a first orifice 453 and a first valve member 454 for controlling the gas flow through the first port 432 of the PCB 430, and includes a second orifice 455 and a second valve member 456 for controlling the gas flow through the second port 434 of the PCB 430. In some embodiments, the MEMS device 423 is soldered to the PCB 430. In some such embodiments, the solder surrounds the first orifice 453 and / or the second orifice 455 to provide a seal between the PCB 430 and the MEMS device 423. In some embodiments, the MEMS device 423 includes a sensor, such as sensor 236 (FIG. 2B). In some embodiments, a sensor separate from the MEMS device 423 is coupled to the PCB 430. Such a sensor may measure any one or more of pressure, temperature, or flow rate. In some embodiments, the MEMS device 423 includes a heater associated with the first orifice 453. In some embodiments, the MEMS device 423 includes a heater associated with the second orifice 455. In some embodiments, a heater separate from the MEMS device 423 (e.g., first unit heater 424) is coupled to the PCB 430.

[0066]

[0075] In some embodiments, the third unit 486 includes a local controller, such as the local controller 429 of the first unit 482. In such embodiments, the local controller controls the operation of at least one device in the third unit 486 (e.g., the MEMS device 423 and / or a separate heater, if present). In one example, the local controller is integrated into the MEMS device 423. In another example, the local controller is coupled to the PCB 430 separately from the MEMS device 423.

[0067]

[0076] In some embodiments, each device in the third unit 486 is independently addressable via a corresponding local controller 429 such that the operation of each device in the third unit 486 can be controlled without changing the operational state of any other device in the showerhead 400A. In some embodiments, each device in the third unit 486 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers 429. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 400A that is not in the defined group.

[0068]

[0077] 4B is a schematic cross-sectional side view of an example showerhead 400B, which is a variation of showerhead 400A. It is envisioned that the configuration of showerhead 400B can be used as showerhead 112 of FIG.

[0069]

[0078] Figure 4B shows the same components as Figure 4A, and the above description of Figure 4A also applies to Figure 4B, except that the spacer 460 is omitted, the PCB 430 is attached directly to the top surface 412 of the faceplate 410, and the void space 474 is internal to the faceplate 410. The interface between the faceplate 410 and the PCB 430 is sealed, for example, by bonding the faceplate 410 to the PCB 430. As shown, in some embodiments, the manifold 440 and the PCB 430 are coupled to the faceplate 410 by one or more fasteners 416, for example screws or bolts. In some embodiments, the fasteners 416 may be omitted.

[0070]

[0079] First unit 492, second unit 494, and third unit 496 correspond to first unit 482, second unit 484, and third unit 486, respectively, of Figure 4A. As shown, in some embodiments, a diffuser 470 is disposed in each compartment 414 above the opening 418 in the face plate 410. In some embodiments, the diffuser 470 may be omitted.

[0071]

[0080] It is envisioned that the cluster of MEMS devices in showerhead 400B can be controlled in the same manner as the embodiment described above with respect to the cluster of MEMS devices 320 in showerhead 300.

[0072]

[0081] As shown, in some embodiments, the first unit 492 includes a local controller 429 as described above. In such embodiments, the local controller 429 controls the operation of at least one device in the first unit 492 (e.g., the MEMS device 420 and / or a separate heater 424, if present). In one example, the local controller 429 is integrated into the MEMS device 420. In some embodiments, the local controller 429 is coupled to the PCB 430 separately from the MEMS device 420. To inhibit corrosion, a surface of the local controller 429 may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, a hydrophobic anti-stiction film applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO2), and the like. x ), and titanium oxide (e.g., TiO2).

[0073]

[0082] In some embodiments, each device in the first unit 492 is independently addressable via a corresponding local controller 429 such that the operation of each device in the first unit 492 can be controlled without changing the operational state of any other device in the showerhead 400B. In some embodiments, each device in the first unit 492 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers 429. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 400B that is not in the defined group.

[0074]

[0083] In some embodiments, the second unit 494 includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, the local controller controls the operation of at least one device in the second unit 494 (e.g., MEMS devices 421, 422 and / or a separate heater, if present). In one example, the local controller is integrated into one of the MEMS devices 421, 422. In another example, the local controller is coupled to the PCB 430 separately from the MEMS devices 421, 422.

[0075]

[0084] In some embodiments, each device in the second unit 494 is independently addressable via a corresponding local controller 429 such that the operation of each device in the second unit 494 can be controlled without changing the operational state of any other device in the showerhead 400B. In some embodiments, each device in the second unit 494 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers 429. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 400B that is not in the defined group.

[0076]

[0085] In some embodiments, the third unit 496 includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, the local controller controls the operation of at least one device in the third unit 496 (e.g., MEMS device 423 and / or a separate heater, if present). In one example, the local controller is integrated into the MEMS device 423. In another example, the local controller is coupled to the PCB 430 separately from the MEMS device 423.

[0077]

[0086] In some embodiments, each device in the third unit 496 is independently addressable via a corresponding local controller 429 such that the operation of each device in the third unit 496 can be controlled without changing the operational state of any other device in the showerhead 400B. In some embodiments, each device in the third unit 496 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers 429. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 400B that is not in the defined group.

[0078]

[0087] In some embodiments, the second unit 484 of FIG. 4A and the second unit 494 of FIG. 4B may be configured to independently control a first gas flow through the first port 432 of the PCB 430 and a second gas flow through the second port 434 of the PCB 430. For example, an operator may configure the second unit 484 of FIG. 4A or the second unit 494 of FIG. 4B to operate under any one of the following four modes: (i) flowing gas only from the first conduit 442 of the manifold 440; (ii) flowing gas only from the second conduit 444 of the manifold 440; (iii) flowing gas from both the first conduit 442 and the second conduit 444 of the manifold 440; and (iv) not flowing gas from the manifold 440.

[0079]

[0088] In a first mode, the valve member 426 of the MEMS device 421 is positioned to uncover at least a portion of the orifice 425, and the valve member 428 of the MEMS device 422 is positioned to uncover at least a portion of the orifice 427. In a second mode, the valve member 426 of the MEMS device 421 is positioned to uncover at least a portion of the orifice 425, and the valve member 428 of the MEMS device 422 is positioned to uncover at least a portion of the orifice 427. In a third mode, the valve member 426 of the MEMS device 421 is positioned to uncover at least a portion of the orifice 425, and the valve member 428 of the MEMS device 422 is positioned to uncover at least a portion of the orifice 427. In a fourth mode, the valve member 426 of the MEMS device 421 is positioned to uncover at least a portion of the orifice 425, and the valve member 428 of the MEMS device 422 is positioned to uncover at least a portion of the orifice 427.

[0080]

[0089] It is envisioned that an operator can configure the second unit 484 of Figure 4A or the second unit 494 of Figure 4B to switch from one of the first, second, third, or fourth modes to another one of the first, second, third, or fourth modes. In one embodiment, an operator can control the second unit 484 of Figure 4A or the second unit 494 of Figure 4B to switch between modes to adjust the composition of process gas within a zone of the processing space (120 of Figure 1) of the processing chamber (100 of Figure 1).

[0081]

[0090] In some embodiments, the third unit 486 of FIG. 4A and the third unit 496 of FIG. 4B may be configured to independently control a first gas flow through the first port 432 of the PCB 430 and a second gas flow through the second port 434 of the PCB 430. For example, an operator may configure the third unit 486 of FIG. 4A or the third unit 496 of FIG. 4B to operate under any one of the following four modes: (i) to flow gas only from the first conduit 442 of the manifold 440; (ii) to flow gas only from the second conduit 444 of the manifold 440; (iii) to flow gas from both the first conduit 442 and the second conduit 444 of the manifold 440; and (iv) to not flow gas from the manifold 440.

[0082]

[0091] In a first mode, the first valve member 454 of the MEMS device 423 is positioned to unobscure at least a portion of the first orifice 453 and the second valve member 456 of the MEMS device 423 is positioned to unobscure at least a portion of the second orifice 455. In a second mode, the first valve member 454 of the MEMS device 423 is positioned to unobscure the first orifice 453 and the second valve member 456 of the MEMS device 423 is positioned to unobscure at least a portion of the second orifice 455. In a third mode, the first valve member 454 of the MEMS device 423 is positioned to unobscure at least a portion of the first orifice 453 and the second valve member 456 of the MEMS device 423 is positioned to unobscure at least a portion of the second orifice 455. In the fourth mode, the first valve member 454 of the MEMS device 423 is positioned to conceal the first orifice 453 and the second valve member 456 of the MEMS device 423 is positioned to conceal the second orifice 455 .

[0083]

[0092] It is contemplated that an operator may configure the third unit 486 of Figure 4A or the third unit 496 of Figure 4B to switch from one of the first, second, third, or fourth modes to another one of the first, second, third, or fourth modes. In one embodiment, an operator may control the third unit 486 of Figure 4A or the third unit 496 of Figure 4B to switch between modes to adjust the composition of process gas within a zone of the processing space (120 of Figure 1) of the processing chamber (100 of Figure 1).

[0084]

[0093] 4A and 4B facilitates proper switching of gases flowing through the showerheads 400A and 400B. In one embodiment, a first process operation includes flowing a first gas through the first conduit 442, the first duct 446, the first port 432, the one or more MEMS devices 420, 421, 423, and through the opening 418 in the faceplate 410 into the process space of the process chamber. A second process operation includes flowing a different second gas through the first conduit 442, the first duct 446, the first port 432, the one or more MEMS devices 420, 421, 423, and through the opening 418 in the faceplate 410 into the process space of the process chamber. If mixing of the first gas with the second gas is harmful or undesirable, the first gas must be evacuated from the first conduit 442, the first duct 446, the first port 432, the one or more MEMS devices 420, 421, 423, and the processing chamber before flowing the second gas. Because the combined volume of the first conduit 442 and the first duct 446 of the manifold and the first port 432 of the PCB 430 is less than the volume of a plenum, e.g., the plenum 116, the amount of first gas that must be evacuated and potentially wasted is less for a processing chamber incorporating a showerhead 400A or 400B than for a processing chamber that delivers process gases through a plenum. Additionally, the time required for the evacuation is less for a processing chamber incorporating a showerhead 400A or 400B than for a processing chamber that delivers process gases through a plenum. As a result, processing chambers incorporating showerhead 400A or 400B offer operational efficiencies in time, gas waste, throughput, and cost over processing chambers that deliver process gases via a plenum.

[0085]

[0094] The configuration of the manifold 440 and PCB 430 shown in Figures 4A and 4B facilitates proper simultaneous delivery of the gases flowing through the showerheads 400A and 400B. In one embodiment, a first gas flows through a first conduit 442, a first duct 446, and one or more MEMS devices 421, 423. A second gas flows through a second conduit 444, a second duct 448, and one or more MEMS devices 422, 423. The first gas and the second gas mix within the void space 474 of the second units 484, 494 and the third units 486, 496 before passing through the opening 418 in the faceplate 410. The MEMS devices 421, 422, 423 facilitate local adjustment to the ratio of the first gas to the second gas within each unit 484, 486, 494, 496. Additionally, the MEMS devices 421 , 422 , 423 facilitate local adjustment to the combined flow rate of the first gas and the second gas within each unit 484 , 486 , 494 , 496 .

[0086]

[0095] As a result, the flow rates and relative amounts of the first and second gases in different regions of the processing space of the processing chamber can be adjusted. In some embodiments, the flow rates and relative amounts of the first and second gases are adjusted to be uniform throughout the processing space. In some embodiments, the flow rates and relative amounts of the first and second gases are adjusted to increase the gas flow in the first region of the processing space and decrease the gas flow in the second region of the processing space. In some embodiments, the flow rates and relative amounts of the first and second gases are adjusted to have a greater proportion of the first gas than the second gas in the first region of the processing space and a greater proportion of the second gas than the first gas in the second region of the processing space.

[0087]

[0096] 5A is a schematic cross-sectional side view of an example showerhead 500A. It is envisioned that the configuration of the showerhead 500A can be used as the showerhead 112 of FIG. 1. The showerhead 500A includes a faceplate 510A formed from a plurality of MEMS modules 520 suspended from a PCB 530A. It is envisioned that the PCB 530A can be configured similarly to the PCB 330 of FIG. 3. As shown, in some embodiments, a portion of the PCB 530A can extend through the chamber body 102 of the processing chamber. Such a configuration facilitates connection to a master controller 550 outside the processing chamber.

[0088]

[0097] Each MEMS module 520 includes a body 521 having a sidewall 522 that includes a MEMS device 560. In some embodiments, the body 521 is integrated with the MEMS device 560. In some embodiments, the body 521 can be attached to the MEMS device 560. In another embodiment, the body 521 is attached to the PCB 530A separately from the MEMS device 560. The sidewall 522 extends to a base 524 below the MEMS device 560. One or more holes 526 in the base 524 facilitate gas flow through the MEMS module 560 and into a processing chamber, such as the processing space (120 in FIG. 1) of the processing chamber 100. In some embodiments, a diffuser 528 is disposed above the one or more holes. The diffuser 528 facilitates uniform distribution of the gas through the one or more holes 526. In some embodiments, the diffuser 528 filters out particles entrained in the gas. Exemplary diffusers 528 include mesh (e.g., sintered mesh), porous metal filters, or foam (e.g., porous PTFE foam), etc. In some embodiments, diffuser 528 may be omitted.

[0089]

[0098] To inhibit corrosion, it is contemplated that each MEMS module 520 may be fabricated from a corrosion-resistant material, such as a ceramic or metal, e.g., titanium. Additionally or alternatively, a surface of each MEMS module 520 may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, hydrophobic anti-stiction films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO x ), and titanium oxide (e.g., TiO2).

[0090]

[0099] Each MEMS device 560 associated with a corresponding MEMS module 520 may be configured similarly to MEMS device 200. Each MEMS device 560 includes an orifice 572, a valve member 574, a heater 576, and a sensor 578 as described above for MEMS device 200 in a schematic diagram. Each MEMS device 560 is coupled to PCB 530A. In some embodiments, MEMS device 560 is soldered to PCB 530A. In some such embodiments, solder surrounds orifice 572 and provides a seal between PCB 530A and MEMS device 560. Each contact of each MEMS device 560 is connected to PCB 530A. Sensor 578, heater 576, and valve member 574 of each MEMS device 560 receive power through PCB 530A. In some embodiments, sensor 578 is omitted and a sensor separate from MEMS device 560 is coupled to PCB 530A. Such sensors may measure any one or more of pressure, temperature, or flow rate. In some embodiments, heater 576 is omitted and a heater separate from MEMS device 560 is coupled to PCB 530A. PCB 530A is coupled to master controller 550 for transmission of power and / or control signals and / or telemetry to and from each MEMS device 560.

[0091]

[0100] The PCB 530A includes a port 531 associated with each MEMS device 560. When a valve member 574 of a MEMS device 560 allows gas to flow through a corresponding orifice 572, gas in the plenum 116 can flow through the corresponding port 531 of the PCB 530A, through the orifice 572, and into the corresponding MEMS module 520. In some embodiments, the gas is heated by a heater 576. The gas then flows through one or more holes 526 in the base 524 of the MEMS module 520.

[0092]

[0101] In some embodiments, MEMS module 520 includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, the local controller controls the operation of at least one device in MEMS module 520 (e.g., MEMS device 560 and / or a separate heater, if present). In one example, the local controller is integrated into MEMS module 520, such as by being integrated into MEMS device 560. In another example, the local controller is separate from MEMS device 520 and coupled to PCB 530A.

[0093]

[0102] In some embodiments, each device in the MEMS module 520 (e.g., MEMS device 560 and / or separate heaters) is independently addressable via a corresponding local controller, e.g., local controller 329, 429. The operation of each device in the MEMS module 520 can be controlled without changing the operational state of any other device in the showerhead 500A. In some embodiments, each device in the MEMS module 520 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 500A that is not in the defined group.

[0094]

[0103] It is envisioned that the cluster of devices in showerhead 500A and / or the cluster of MEMS modules 520 may be controlled in a manner similar to the embodiments described above with respect to the cluster of MEMS devices 320 in showerhead 300.

[0095]

[0104] FIG. 5B is a schematic cross-sectional side view of an example showerhead 500B, which is a variation of showerhead 500A and incorporates elements of showerhead 400B. It is envisioned that the configuration of showerhead 500B can be used as showerhead 112 of FIG. 1. Showerhead 500B includes a faceplate 510B formed from multiple MEMS modules 520, 520A, 520B suspended from a PCB 530B. It is envisioned that PCB 530B can be configured similarly to PCB 430 of FIGS. 4A and 4B. Showerhead 500B includes a manifold 540 disposed on PCB 530B. Manifold 540 includes a first conduit 542 for the passage of a first gas and a second conduit 544 for the passage of a second gas. The first conduit 542 is assumed to be isolated from the second conduit 544 so that the first and second gases do not mix within the manifold 540. A first duct 546 from the first conduit 542 is aligned with the first port 532 in the PCB 530B. A second duct 548 from the second conduit 544 is aligned with the second port 534 in the PCB 530B. An interface 538 between the manifold 540 and the PCB 530B is sealed to inhibit mixing of the first and second gases at the interface 538, for example, by bonding the manifold 540 to the PCB 530B. The PCB 530B is coupled to a master controller 550 for transmission of power and / or control signals and / or telemetry to and from the MEMS devices attached to the PCB 530B. As shown, in some embodiments, a portion of the PCB 530B can extend through the chamber body 102 of the processing chamber. Such a configuration facilitates connection to the master controller 550.

[0096]

[0105] In some embodiments, the manifold 540 includes one or more additional conduits and corresponding ducts configured to carry one or more additional gases. In such embodiments, the one or more additional conduits may be separate from the first conduit 542 and the second conduit 544. It is further contemplated that the PCB 530B may include additional ports aligned with the additional ducts. As shown, in some embodiments, a portion of the manifold 540 may extend through the chamber body 102 of the processing chamber. Such a configuration facilitates connection to one or more gas supplies.

[0097]

[0106] It is envisioned that the cluster of devices in showerhead 500B and / or the cluster of MEMS modules 520, 520A, 520B may be controlled in a manner similar to the embodiments described above with respect to the cluster of MEMS devices 320 in showerhead 300.

[0098]

[0107] 5B illustrates three exemplary configurations in which one or more MEMS modules 520, 520A, 520B are attached to a PCB 530B. Each attachment of a MEMS module 520, 520A, 520B to a corresponding portion of the PCB 530B can be considered a separate unit, as described below.

[0099]

[0108] First unit 582 includes MEMS module 520 (described above), second unit 584 includes MEMS module 520A, and third unit 586 includes MEMS module 520B. As described above for MEMS module 520, MEMS module 520A includes a body 521A, a sidewall 522A, and a base 524A having one or more holes 526A. As described above for MEMS module 520, MEMS module 520B includes a body 521B, a sidewall 522B, and a base 524B having one or more holes 526B.

[0100]

[0109] To inhibit corrosion, it is contemplated that each MEMS module 520, 520A, 520B may be fabricated from a corrosion-resistant material, such as a ceramic or a metal, e.g., titanium. Additionally or alternatively, a surface of each MEMS module 520, 520A, 520B may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, hydrophobic anti-stiction films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO2), and other suitable materials. x ), and titanium oxide (e.g., TiO2).

[0101]

[0110] In the first unit 582, the PCB 530B includes a port 532 aligned with the first duct 546 of the manifold 540, but does not include a port corresponding to the second duct 548 of the manifold 540. As a result, the first unit 582 is configured to manage gas supplied through the first conduit 542 of the manifold, but is not configured to manage gas supplied through the second conduit 544 of the manifold 540. However, in alternative embodiments, the first unit 582 may be configured to manage gas supplied through the second conduit 544 of the manifold 540, but may not be configured to manage gas supplied through the first conduit 542 of the manifold 540. In such embodiments, the PCB 530B includes a port aligned with the second duct 548 of the manifold 540, but does not include a port corresponding to the first duct 546 of the manifold 540.

[0102]

[0111] As described above, the MEMS module 520 is attached to the PCB 530B. The MEMS device 560 associated with the MEMS module 520 coupled to the PCB 530B regulates the gas flow through the port 532 of the PCB 530B. It is envisioned that the MEMS device 560 may be configured similarly to the MEMS device 200. The MEMS device 560 includes an orifice 572, a valve member 574, a heater 576, and a sensor 578 as described above for the MEMS device 200 in a schematic diagram. The MEMS device 560 is coupled to the PCB 530B. In some embodiments, the MEMS device 560 is soldered to the PCB 530B. In some such embodiments, the solder surrounds the orifice 572 and provides a seal between the PCB 530B and the MEMS device 560. Each contact of the MEMS device 560 is connected to a PCB. The sensor 578, heater 576, and valve member 574 of the MEMS device 560 receive power via PCB 530B.

[0103]

[0112] In some embodiments, sensor 578 is omitted and a sensor separate from MEMS device 560 is coupled to PCB 530B. Such a sensor may measure any one or more of pressure, temperature, or flow. In some embodiments, heater 576 is omitted and a heater separate from MEMS device 560 is coupled to PCB 530B. PCB 530B is coupled to master controller 550 for transmission of power and / or control signals and / or telemetry to and from MEMS device 560.

[0104]

[0113] In some embodiments, the MEMS module 520 includes a diffuser, such as the above-mentioned diffuser 528. In some embodiments, the diffuser may be omitted.

[0105]

[0114] In some embodiments, first unit 582 includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, the local controller controls the operation of at least one device in first unit 582 (e.g., MEMS device 560 and / or a separate heater, if present). In one example, the local controller is integrated into MEMS module 520, such as by being integrated into MEMS device 560. In another example, the local controller is separate from MEMS device 560 and coupled to PCB 530B.

[0106]

[0115] In some embodiments, each device in the first unit 582 is independently addressable via a corresponding local controller (e.g., local controller 429) such that the operation of each device in the first unit 582 can be controlled without changing the operational state of any other device in the showerhead 500B. In some embodiments, each device in the first unit 582 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 500B that is not in the defined group.

[0107]

[0116] In the second unit 584, the PCB 530B includes a first port 532 aligned with a first duct 546 of the manifold 540 and a second port 534 aligned with a second duct 544 of the manifold 540, such that the second unit 584 is configured to manage gas supplied through a first conduit 542 of the manifold 540 and a second conduit 544 of the manifold 540.

[0108]

[0117] The MEMS module 520A is attached to a PCB 530B. The MEMS module 520A includes a first MEMS device 562 coupled to the PCB 530B that regulates the flow of gas through a first port 532 of the PCB 530B. The MEMS module 520A includes a second MEMS device 564 coupled to the PCB 530B that regulates the flow of gas through a second port 534 of the PCB 530B. It is envisioned that each MEMS device 562, 564 may be configured similarly to the MEMS device 200.

[0109]

[0118] Each MEMS device 562, 564 includes, in schematic form, an orifice 572A, 572B; a valve member 574A, 574B; and a heater 576A, 576B, as described above for MEMS device 200. In some embodiments, the heaters 576A, 576B may be omitted and a heater separate from each MEMS device 562, 564 is coupled to the PCB 530B. As shown, in some embodiments, at least one of the MEMS devices 562, 564 includes a sensor 578A, such as sensor 236. In some embodiments, the sensor 578A is omitted and a sensor separate from the MEMS device 562, 564 is coupled to the PCB 530B. Such a sensor may measure any one or more of pressure, temperature, or flow rate. Each MEMS device 562, 564 is coupled to the PCB 530B. In some embodiments, each MEMS device 562, 564 is soldered to the PCB 530B. In some such embodiments, solder surrounds each orifice 572A, 572B and provides a seal between the PCB 530B and each MEMS device 562, 564. Each contact of each MEMS device 562, 564 is connected to the PCB 530B. The sensor 578A; heaters 576A, 576B (including separate heaters, if present); and valve members 574A, 574B of each MEMS device 562, 564 receive power via the PCB 530B.

[0110]

[0119] In some embodiments, the MEMS module 520A includes a diffuser, such as the above-mentioned diffuser 528. In some embodiments, the diffuser may be omitted.

[0111]

[0120] In some embodiments, the second unit 584 includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, the local controller controls the operation of at least one device in the second unit 584 (e.g., MEMS devices 562, 564 and / or a separate heater, if present). In one example, the local controller is integrated into one of the MEMS devices 562, 564. In another example, the local controller is coupled to the PCB 530B separately from the MEMS devices 562, 564.

[0112]

[0121] In some embodiments, each device in the second unit 584 is independently addressable via a corresponding local controller (e.g., local controller 429) such that the operation of each device in the second unit 584 can be controlled without changing the operational state of any other device in the showerhead 500B. In some embodiments, each device in the second unit 584 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 500B that is not in the defined group.

[0113]

[0122] In some embodiments, the second unit 584 may be configured to independently control a first gas flow through the first port 532 of the PCB 530B and a second gas flow through the second port 534 of the PCB 530B. For example, an operator may configure the second unit 584 to operate under any one of the following four modes: (i) flowing gas only from the first conduit 542 of the manifold 540; (ii) flowing gas only from the second conduit 544 of the manifold 540; (iii) flowing gas from both the first conduit 542 and the second conduit 544 of the manifold 540; and (iv) not flowing gas from the manifold 540.

[0114]

[0123] In a first mode, valve member 574A of MEMS device 562 is positioned to unobscure at least a portion of orifice 572A, and valve member 574B of MEMS device 564 is positioned to unobscure orifice 572B. In a second mode, valve member 574A of MEMS device 562 is positioned to unobscure orifice 572A, and valve member 574B of MEMS device 564 is positioned to unobscure at least a portion of orifice 572B. In a third mode, valve member 574A of MEMS device 562 is positioned to unobscure at least a portion of orifice 572A, and valve member 574B of MEMS device 564 is positioned to unobscure at least a portion of orifice 572B. In the fourth mode, valve member 574A of MEMS device 562 is positioned to obscure orifice 572A, and valve member 574B of MEMS device 564 is positioned to obscure orifice 572B.

[0115]

[0124] It is contemplated that an operator may configure the second unit 584 to switch from one of the first, second, third, or fourth modes to another one of the first, second, third, or fourth modes. In one embodiment, an operator may control the second unit 584 to switch between the modes to adjust the composition of the process gas within a zone of the processing space (120 in FIG. 1) of the processing chamber (100 in FIG. 1).

[0116]

[0125] In the third unit 586, the PCB 530B includes a first port 532 aligned with a first duct 546 of the manifold 540 and a second port 534 aligned with a second duct 548 of the manifold 540. As a result, the third unit 586 is configured to manage gas supplied via a first conduit 542 of the manifold 540 and a second conduit 542 of the manifold 540.

[0117]

[0126] The MEMS module 520B is attached to a PCB 530B. The MEMS module 520B includes a MEMS device 566 coupled to the PCB 530B that regulates gas flow through a first port 532 of the PCB 530B and a gas flow through a second port 534 of the PCB 530B. It is envisioned that the MEMS device 566 may be configured similarly to the MEMS device 250.

[0118]

[0127] The MEMS device 566 includes, in a schematic view, a first orifice 572C and a first valve member 574C as described above for the MEMS device 250 to control gas flow through a first port 532 of the PCB 530B. The MEMS device 566 includes, in a schematic view, a second orifice 572D and a second valve member 574D as described above for the MEMS device 250 to control gas flow through a second port 534 of the PCB 530B. In some embodiments, the MEMS device 566 is soldered to the PCB 530B. In some such embodiments, the solder surrounds the first orifice 572C and the second orifice 572D to provide a seal between the PCB 530B and the MEMS device 566. The MEMS device 566 includes, in a schematic diagram, a first heater 576C associated with the first orifice 572C and a second heater 576D associated with the second orifice 572D, as described above for the MEMS device 250. In some embodiments, the heaters 576C, 576D are omitted and a heater separate from the MEMS device 566 is coupled to the PCB 530B. The MEMS device 566 includes, in a schematic diagram, a sensor 578B, as described above for the MEMS device 250. In some embodiments, the sensor 578B is omitted and a sensor separate from the MEMS device 566 is coupled to the PCB 530B. Such a sensor may measure any one or more of pressure, temperature, or flow rate. The sensor 578B, heaters 576C, 576D, and valve members 574C, 574D, and / or separate heaters (if present) of the MEMS device 566 receive power via PCB 530B.

[0119]

[0128] In some embodiments, the MEMS module 520B includes a diffuser, such as the above-mentioned diffuser 528. In some embodiments, the diffuser may be omitted.

[0120]

[0129] In some embodiments, the third unit 586 includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, the local controller controls the operation of at least one device in the third unit 586 (e.g., MEMS device 566 and / or a separate heater, if present). In one example, the local controller is integrated into MEMS device 566. In another example, the local controller is separate from MEMS device 566 and coupled to PCB 530B.

[0121]

[0130] In some embodiments, each device in the third unit 586 is independently addressable via a corresponding local controller (e.g., local controller 429) such that the operation of each device in the third unit 586 can be controlled without changing the operational state of any other device in the showerhead 500B. In some embodiments, each device in the third unit 586 is assigned to one or more groups of devices, and each group of devices is independently addressable via one or more corresponding local controllers. In such embodiments, the operation of each device in a defined group can be controlled without changing the operational state of any other device in the showerhead 500B that is not in the defined group.

[0122]

[0131] In some embodiments, the third unit 586 may be configured to independently control a first gas flow through the first port 532 of the PCB 530B and a second gas flow through the second port 534 of the PCB 530B. For example, an operator may configure the third unit 586 to operate under any one of the following four modes: (i) flowing gas only from the first conduit 542 of the manifold 540; (ii) flowing gas only from the second conduit 544 of the manifold 540; (iii) flowing gas from both the first conduit 542 and the second conduit 544 of the manifold 540; and (iv) not flowing gas from the manifold 540.

[0123]

[0132] In a first mode, the first valve member 574C of the MEMS device 566 is positioned to uncover at least a portion of the first orifice 572C, and the second valve member 574D of the MEMS device 566 is positioned to uncover at least a portion of the second orifice 572D. In a second mode, the first valve member 574C of the MEMS device 566 is positioned to uncover the first orifice 572C, and the second valve member 574D of the MEMS device 566 is positioned to uncover at least a portion of the second orifice 572D. In a third mode, the first valve member 574C of the MEMS device 566 is positioned to uncover at least a portion of the first orifice 572C, and the second valve member 574D of the MEMS device 566 is positioned to uncover at least a portion of the second orifice 572D. In the fourth mode, the first valve member 574C of the MEMS device 566 is positioned to conceal the first orifice 572C, and the second valve member 574D of the MEMS device 566 is positioned to conceal the second orifice 572D.

[0124]

[0133] It is contemplated that an operator may configure the third unit 586 to switch from one of the first, second, third, or fourth modes to another one of the first, second, third, or fourth modes. In one embodiment, an operator may control the third unit 586 to switch between modes to adjust the composition of process gas within a zone of the processing space (120 in FIG. 1) of the processing chamber (100 in FIG. 1).

[0125]

[0134] 5B facilitates proper switching of gases flowing through the showerhead 500B. In one embodiment, a first process operation includes flowing a first gas into a process space of the process chamber through the first conduit 542, the first duct 546, the first port 532, the one or more MEMS devices 560, 562, 566, and through one or more holes 526, 526A, 526B in the faceplate 510B. A second process operation includes flowing a different second gas into a process space of the process chamber through the first conduit 542, the first duct 546, the first port 532, the one or more MEMS devices 560, 562, 566, and through one or more holes 526, 526A, 526B in the faceplate 510B. If mixing of the first gas with the second gas is harmful or undesirable, the first gas must be evacuated from the first conduit 542, the first duct 546, the first port 532, the one or more MEMS devices 560, 562, 566, and the processing chamber before flowing the second gas. Because the combined volume of the first conduit 442 and the first duct 446 of the manifold and the first port 532 of the PCB 530B is less than the volume of a plenum, e.g., plenum 116, the amount of first gas that must be evacuated, and potentially wasted, is less for a processing chamber incorporating the showerhead 500B than for a processing chamber that delivers process gases through a plenum. Additionally, the time required for the evacuation is less for a processing chamber incorporating the showerhead 500B than for a processing chamber that delivers process gases through a plenum. As a result, processing chambers incorporating showerhead 500B offer operational efficiencies in time, gas waste, throughput, and cost over processing chambers that deliver process gases via a plenum.

[0126]

[0135] 5B facilitates proper co-delivery of the gases flowing through the showerhead 500B. In one embodiment, a first gas flows through a first conduit 542, a first duct 546, a first port 532, and one or more MEMS devices 562, 566. A second gas flows through a second conduit 544, a second duct 548, a second port 534, and one or more MEMS devices 564, 566. The first and second gases mix within the MEMS modules 520A, 520B of the second and third units 584 and 586, respectively, before passing through one or more holes 526A, 526B, respectively, in the faceplate 510B. The MEMS devices 562, 564, 566 facilitate local adjustment to the ratio of the first gas to the second gas within each unit 584, 586. Additionally, the MEMS devices 562, 564, 566 facilitate local adjustment to the total flow rate of the first gas to the second gas within each unit 584, 586.

[0127]

[0136] As a result, the flow rates and relative amounts of the first and second gases in different regions of the processing space of the processing chamber can be adjusted. In some embodiments, the flow rates and relative amounts of the first and second gases are adjusted to be uniform throughout the processing space. In some embodiments, the flow rates and relative amounts of the first and second gases are adjusted to increase the gas flow in the first region of the processing space and decrease the gas flow in the second region of the processing space. In some embodiments, the flow rates and relative amounts of the first and second gases are adjusted to have a greater proportion of the first gas than the second gas in the first region of the processing space and a greater proportion of the second gas than the first gas in the second region of the processing space.

[0128]

[0137] 6A-6G are schematic cross-sectional side views of different configurations of MEMS modules. In some embodiments, it is contemplated that showerhead 500A and showerhead 500B may include MEMS modules of the same configuration. Additionally or alternatively, showerhead 500A and showerhead 500B may include MEMS modules of different configurations.

[0129]

[0138] 6A illustrates a MEMS module 600A. The MEMS module 600A can be used as any of the MEMS modules 520, 520A, or 520B. The MEMS module 600A is illustrated as including a MEMS device 610A. The MEMS device 610A can be configured similarly to the MEMS device 200 or the MEMS device 250. The MEMS device 610A includes, in schematic form, an orifice 612A, a valve member 614A, a heater 616A at the orifice 612A, and a sensor 618A as described above for the MEMS device 200. In some embodiments, it is contemplated that the MEMS module 600A can alternatively include any variation of any of the MEMS devices described above. Additionally, it is contemplated that the MEMS module 600A can include multiple MEMS devices.

[0130]

[0139] The MEMS module 600A includes a body 601A having a sidewall 602A. In some embodiments, the body 601A is integrated with the MEMS device 610A. In some embodiments, the body 601A can be attached to the MEMS device 610A. In another embodiment, the body 601A is configured to be attached to a PCB separately from the MEMS device 610A. The sidewall 602A extends below the MEMS device 610A to a base 604A. One or more holes 606A in the base 604A facilitate gas flow through the MEMS device 610A. The base 604A is configured as an insert coupled to the sidewall 602A. In some embodiments, the insert is removable to facilitate replacement with an alternative insert having, for example, a different hole size, a different number of holes, or a different pattern of holes. In one example, the insert is removable to facilitate cleaning and / or refurbishing the showerhead. In one example, the insert is coupled to the side wall 602A by threads. In some embodiments, a diffuser, such as diffuser 470, is positioned above one or more holes 606A.

[0131]

[0140] In some embodiments, the MEMS module 600A includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, it is assumed that the local controller controls the operation of the MEMS device 610A. In one example, the local controller is integrated into the MEMS device 610A. In another example, the local controller is separate from the MEMS device 610A and coupled to a PCB.

[0132]

[0141] 6B illustrates a MEMS module 600B. The MEMS module 600B can be used as any of the MEMS modules 520, 520A, or 520B. The MEMS module 600B is illustrated as including a MEMS device 610B. The MEMS device 610B can be configured similarly to the MEMS device 200 or the MEMS device 250. The MEMS device 610B includes, in schematic form, an orifice 612B, a valve member 614B, a heater 616B at the orifice 612B, and a sensor 618B, as described above for the MEMS device 200. In some embodiments, it is contemplated that the MEMS module 600B can alternatively include any variation of any of the MEMS devices described above. Additionally, it is contemplated that the MEMS module 600B can include multiple MEMS devices.

[0133]

[0142] The MEMS module 600B includes a body 601B. In some embodiments, the body 601B is integrated with the MEMS device 610B. In some embodiments, the body 601B can be attached to the MEMS device 610B. In another embodiment, the body 601B is configured to be attached to a PCB separately from the MEMS device 610B. An insert holder 607 is attached to the body 601B, for example, by welding or adhesive bonding. The insert holder 607 includes a sidewall 602B that extends below the MEMS device 610B to a base 604B. One or more holes 606B in the base 604B facilitate gas flow through the MEMS device 610B. The base 604B is configured as an insert coupled to the sidewall 602B. In some embodiments, the insert is removable, for example, to facilitate replacement with an alternative insert having a different hole size, a different number of holes, or a different pattern of holes. In one embodiment, the insert is removable to facilitate cleaning and / or refurbishing the showerhead. In one embodiment, the insert is coupled to the sidewall 602B by threads. In some embodiments, a diffuser, such as diffuser 470, is positioned above one or more of the holes 606B.

[0134]

[0143] In some embodiments, the MEMS module 600B includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, it is assumed that the local controller controls the operation of the MEMS device 610B. In one example, the local controller is integrated into the MEMS device 610B. In another example, the local controller is separate from the MEMS device 610B and coupled to a PCB.

[0135]

[0144] 6C illustrates a MEMS module 600C. The MEMS module 600C can be used as any of the MEMS modules 520, 520A, or 520B. The MEMS module 600C is illustrated as including a MEMS device 610C. The MEMS device 610C can be configured similarly to the MEMS device 200 or the MEMS device 250. The MEMS device 610C includes, in schematic form, an orifice 612C, a valve member 614C, a heater 616C at the orifice 612C, and a sensor 618C as described above for the MEMS device 200. In some embodiments, it is contemplated that the MEMS module 600C can alternatively include any variation of any of the MEMS devices described above. In addition, it is contemplated that the MEMS module 600C can include multiple MEMS devices.

[0136]

[0145] The MEMS module 600C includes a body 601C. In some embodiments, the body 601C is integrated with the MEMS device 610C. In some embodiments, the body 601C can be attached to the MEMS device 610C. In another embodiment, the body 601C is configured to be attached to a PCB separately from the MEMS device 610C. A base unit 608 is attached to the body 601C, for example, by welding or adhesive bonding. The base unit 608 includes a sidewall 602C that extends below the MEMS device 610C to a base 604C. One or more holes 606C in the base 604C facilitate gas flow through the MEMS device 610C. The base 604B is fixed to or integrated with the sidewall 602C. In some embodiments, a diffuser, for example the diffuser 470, is disposed above the one or more holes 606C.

[0137]

[0146] In some embodiments, the MEMS module 600C includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, it is assumed that the local controller controls the operation of the MEMS device 610C. In one example, the local controller is integrated into the MEMS device 610C. In another example, the local controller is separate from the MEMS device 610C and coupled to a PCB.

[0138]

[0147] 6D illustrates a MEMS module 600D. The MEMS module 600D can be used as any of the MEMS modules 520, 520A, or 520B. The MEMS module 600D is illustrated as including a MEMS device 610D. The MEMS device 610D can be configured similarly to the MEMS device 200 or the MEMS device 250. The MEMS device 610D includes an orifice 612D, a valve member 614D, and a sensor 618D as described above for the MEMS device 200 in a schematic diagram. A heater 622 is attached to the MEMS device 610D and extends below the MEMS device 610D. In some embodiments, the heater 622 includes a mesh, such as a sintered mesh. In some embodiments, the heater 622 also functions as a diffuser or filter. In some embodiments, it is contemplated that the MEMS module 600D can alternatively include any variation of any of the MEMS devices described above. In addition, it is envisioned that MEMS module 600D may include multiple MEMS devices.

[0139]

[0148] The MEMS module 600D includes a body 601D having a sidewall 602D. In some embodiments, the body 601D is integrated with the MEMS device 610D. In some embodiments, the body 601D can be attached to the MEMS device 610D. In another embodiment, the body 601D is configured to be attached to a PCB separately from the MEMS device 610D. The sidewall 602D extends below the MEMS device 610D to a base 604D. One or more holes 606D in the base 604D facilitate gas flow through the MEMS device 610D. The base 604D is configured as an insert coupled to the sidewall 602D. In some embodiments, the insert is removable to facilitate replacement with an alternative insert having, for example, a different hole size, a different number of holes, or a different pattern of holes. In one example, the insert is removable to facilitate cleaning and / or refurbishing the showerhead. In one example, the insert is coupled to the sidewall 602D by threads. In some embodiments, a diffuser, such as diffuser 470, is positioned above one or more holes 606D.

[0140]

[0149] In some embodiments, the MEMS module 600D includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, it is assumed that the local controller controls the operation of the MEMS device 610D. In one example, the local controller is integrated into the MEMS device 610D. In another example, the local controller is separate from the MEMS device 610D and coupled to a PCB.

[0141]

[0150] 6E illustrates a MEMS module 600E. The MEMS module 600E can be used as any of the MEMS modules 520, 520A, or 520B. The MEMS module 600E is illustrated as including a MEMS device 610E. The MEMS device 610E can be configured similarly to the MEMS device 200 or the MEMS device 250. The MEMS device 610E includes, in schematic form, an orifice 612E, a valve member 614E, and a sensor 618E as described above for the MEMS device 200. In some embodiments, it is contemplated that the MEMS module 600E can alternatively include any variation of any of the MEMS devices described above. Additionally, it is contemplated that the MEMS module 600E can include multiple MEMS devices.

[0142]

[0151] The MEMS module 600E includes a body 601E having a sidewall 602E. In some embodiments, the body 601E is integrated with the MEMS device 610E. In some embodiments, the body 601E can be attached to the MEMS device 610E. In another embodiment, the body 601E is configured to be attached to a PCB separately from the MEMS device 610E. The sidewall 602E extends below the MEMS device 610E to a base 604E. One or more holes 606E in the base 604E facilitate gas flow through the MEMS device 610E. The base 604E is configured as an insert coupled to the sidewall 602E. In some embodiments, the insert is removable to facilitate replacement with an alternative insert having, for example, a different hole size, a different number of holes, or a different pattern of holes. In one example, the insert is removable to facilitate cleaning and / or refurbishing the showerhead. In one example, the insert is coupled to the sidewall 602E by threads. In some embodiments, a diffuser, such as diffuser 470, is positioned above one or more holes 606E.

[0143]

[0152] The MEMS module 600E includes a heater 624 that is separate from the MEMS device 610E. The heater 624 is attached to the body 601E. It is contemplated that an electrical connection between the heater 624 and a PCB may be facilitated by wiring through the body 601E and / or the MEMS device 610E. It is contemplated that the heater 624 may be located below the MEMS device 610E, as shown. In some embodiments, the heater 624 includes a mesh, for example a sintered mesh. In some embodiments, the heater 624 also functions as a diffuser or filter.

[0144]

[0153] In some embodiments, the MEMS module 600E includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, it is assumed that the local controller controls the operation of the MEMS device 610E. In one example, the local controller is integrated into the MEMS device 610E. In another example, the local controller is separate from the MEMS device 610E and coupled to a PCB.

[0145]

[0154] 6F illustrates a MEMS module 600F. The MEMS module 600F can be used as any of the MEMS modules 520, 520A, or 520B. The MEMS module 600F is illustrated as including a MEMS device 610F. The MEMS device 610F can be configured similarly to the MEMS device 200 or the MEMS device 250. The MEMS device 610F includes an orifice 612F, a valve member 614F, and a sensor 618F as described above for the MEMS device 200 in schematic form. In some embodiments, it is contemplated that the MEMS module 600F can alternatively include any variation of any of the MEMS devices described above. Additionally, it is contemplated that the MEMS module 600F can include multiple MEMS devices.

[0146]

[0155] The MEMS module 600F includes a body 601F having a sidewall 602F. In some embodiments, the body 601F is integrated with the MEMS device 610F. In some embodiments, the body 601F can be attached to the MEMS device 610F. In another embodiment, the body 601F is configured to be attached to a PCB separately from the MEMS device 610F. The sidewall 602F extends below the MEMS device 610F to a base 604F. One or more holes 606F in the base 604F facilitate gas flow through the MEMS device 610F. The base 604F is configured as an insert coupled to the sidewall 602F. In some embodiments, the insert is removable to facilitate replacement with an alternative insert having, for example, a different hole size, a different number of holes, or a different pattern of holes. In one example, the insert is removable to facilitate cleaning and / or refurbishing the showerhead. In one embodiment, the insert is coupled to the side wall 602F by threads.

[0147]

[0156] The MEMS module 600F includes a heater 626 that is separate from the MEMS device 610F. The heater 626 is attached to the body 601F. It is envisioned that an electrical connection between the heater 626 and a PCB may be facilitated by wiring through the body 601F and / or the MEMS device 610F. In some embodiments, the heater 626 includes a mesh, for example a sintered mesh. In some embodiments, the heater 626 also functions as a diffuser or filter.

[0148]

[0157] As shown, it is contemplated that the heater 626 can be located below the MEMS device 610F, at or near the base 604F. As shown, it is contemplated that in some embodiments, a diffuser 628, such as diffuser 470, may be located between the heater 626 and the MEMS device 610F.

[0149]

[0158] In some embodiments, the MEMS module 600F includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, it is assumed that the local controller controls the operation of the MEMS device 610F. In one example, the local controller is integrated into the MEMS device 610F. In another example, the local controller is separate from the MEMS device 610F and coupled to a PCB.

[0150]

[0159] 6G illustrates a MEMS module 600G. The MEMS module 600G can be used as any of the MEMS modules 520, 520A, or 520B. The MEMS module 600G is illustrated as including a MEMS device 610G. The MEMS device 610G can be configured similarly to the MEMS device 200 or the MEMS device 250. The MEMS device 610G includes an orifice 612G, a valve member 614G, and a sensor 618G as described above for the MEMS device 200 in schematic form. In some embodiments, it is contemplated that the MEMS module 600G can alternatively include any variation of any of the MEMS devices described above. Additionally, it is contemplated that the MEMS module 600G can include multiple MEMS devices.

[0151]

[0160] The MEMS module 600G includes a body 601G having a sidewall 602G. In some embodiments, the body 601G is integrated with the MEMS device 610G. In some embodiments, the body 601G can be attached to the MEMS device 610G. In another embodiment, the body 601G is configured to be attached to a PCB separately from the MEMS device 610G. The sidewall 602G extends below the MEMS device 610G to a base 604G. One or more holes 606G in the base 604G facilitate gas flow through the MEMS device 610G. The base 604G is configured as an insert coupled to the sidewall 602G. In some embodiments, the insert is removable to facilitate replacement with an alternative insert having, for example, a different hole size, a different number of holes, or a different pattern of holes. In one example, the insert is removable to facilitate cleaning and / or refurbishing the showerhead. In one example, the insert is coupled to the sidewall 602G by threads. As shown, in some embodiments, a diffuser 628, such as diffuser 470, is positioned above one or more holes 606G.

[0152]

[0161] It is contemplated that at least the base 604G may function as a heating element. As an example, the base may be fabricated from graphite, for example in the form of IFS-2B. In some embodiments, the sidewalls 602G are fabricated from a material similar to that of the base 604G. In some embodiments, the body 601G is fabricated from a material similar to that of the base 604G. It is contemplated that any portion of the body 601G, sidewalls 602G, or base 604G that is not fabricated to function as a heating element may be fabricated from a corrosion resistant material, such as a ceramic or metal, for example titanium.

[0153]

[0162] In some embodiments, the MEMS module 600G includes a local controller, such as local controller 429 of FIG. 4A. In such embodiments, it is assumed that the local controller controls the operation of the MEMS device 610G. In one example, the local controller is integrated into the MEMS device 610G. In another example, the local controller is separate from the MEMS device 610G and coupled to a PCB.

[0154]

[0163] It is contemplated that a surface of each MEMS device 610A-610G, and / or the local controller (if present), and / or the heaters 622, 624, 626, and / or the diffuser (if present), may be coated with one or more suitable materials to inhibit corrosion and / or reduce the likelihood that the valve members of the MEMS devices will stick in place and become inoperable. Examples of coating materials include silicon carbide, parylene, hydrophobic anti-stiction films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., Y2O3), silicon oxide (e.g., SiO x ), and titanium oxide (e.g., TiO2).

[0155]

[0164] To inhibit corrosion, it is envisioned that each MEMS module 600A-600F may be fabricated from a corrosion-resistant material, such as a ceramic or a metal, e.g., titanium. Additionally or alternatively, the surface of each MEMS module 600A-600F and 600G may be coated with one or more suitable materials. Examples of coating materials include silicon carbide, parylene, hydrophobic anti-stiction films applied by molecular vapor deposition, ceramics, aluminum oxide (e.g., Al2O3), yttrium oxide (e.g., YO3), silicon oxide (e.g., SiO2), and other suitable materials. x ), and titanium oxide (e.g., TiO2).

[0156]

[0165] 7 is a schematic plan view of a showerhead faceplate 700. The faceplate 700 represents any faceplate of the present disclosure, such as any of the faceplates 310, 410, 510A, 510B of the corresponding showerheads 300, 400A, 400B, 500A, 500B used as the showerhead 112 of the processing chamber 100. Zones 710 are defined on the faceplate 700, with each zone 710 including one or more openings 712 through the faceplate 700. In operation, process gas flow through the opening or openings 712 of a particular zone 710 is controlled by one or more MEMS devices associated with the particular zone 710. In operation, one or more devices, such as MEMS devices and / or heaters, are associated with each zone 710 and controlled independently and / or collectively, as described above. In one embodiment, the operation of each MEMS device or heater can be controlled without changing the operational state of another MEMS device or heater associated with faceplate 700. It is contemplated that the number, size, and distribution of zones 710 may be configured according to the type of process being performed in processing chamber 100 and / or one or more particular process gases being used.

[0157]

[0166] It is envisioned that any of PCBs 330, 430, 530A, 530B may be made of a ceramic material with embedded metallic conductors. In some embodiments, it is envisioned that PCBs 530A and 530B may include features for coupling to one or more support members. In one example, the one or more support members facilitate PCBs 530A and 530B extending throughout the processing space within the processing chamber to support the weight of components suspended from PCBs 530A and 530B, such as MEMS modules 520, 520A, 520B. In a further example, manifold 540 serves as a support member for PCB 530B.

[0158]

[0167] The manifold 440 or 540 may be made of a ceramic material. In some embodiments, it is contemplated that the manifold 440 or 540 may include features for connection to one or more support members. In one example, the one or more support members facilitate the manifold 440 or 540 extending across the processing volume of the processing chamber and supporting the weight of components suspended from the manifold 440 or 540, such as PCB 430 or 530B. In a further example, PCB 530B serves as a support member for the manifold 540.

[0159]

[0168] It is envisioned that any of the master controllers 350, 450, 550 includes a central processing unit (CPU), memory containing instructions, and support circuitry for the CPU. The master controller 350, 450, 550 may be any form of general-purpose computer processor used in an industrial environment to control various chambers and equipment and / or sub-processors thereon or therein.

[0160]

[0169] The memory, or non-transitory computer readable medium, is one or more of readily available memory, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. Support circuits are coupled to the CPU to support the CPU (processor). Support circuits include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. Operations and operating parameters are stored in the memory as software routines that are executed or called to transform the master controller 350, 450, 550 into an application-specific controller that controls the operation of any of the showerheads 300, 400A, 400B, 500A, 500B. The master controller 350, 450, 550 is configured to perform any of the operations described herein. The instructions stored in the memory, when executed, cause one or more of the operations described herein to be performed.

[0161]

[0170] In some embodiments, data from any of the sensors 236, 328, 578, 578A, 578B, 618A, 618B, 618C, 618D, 618E, 618F, 618G and / or any sensors associated with any of the showerheads 300, 400A, 400B, 500A, 500B may be used to provide feedback to a controller, such as any of the master controllers 350, 450, 550. In some embodiments, data of the current through any of the heaters 326, 424, 576, 576A, 576B, 576C, 576D, 616A, 616B, 616C, 622, 624, 626 and / or any heaters associated with any of the showerheads 300, 400A, 400B, 500A, 500B may be used to provide feedback to a controller, such as any of the master controllers 350, 450, 550. For example, the data may include pressure data and / or temperature data.

[0162]

[0171] A controller, such as any of the master controllers 350, 450, 550, uses the data so provided as input to processing commands addressed to one or more individual MEMS devices and / or one or more groups of MEMS devices. In some such embodiments, the commands instruct one or more individual MEMS devices and / or one or more groups of MEMS devices to adjust the flow rate of gases through one or more individual MEMS devices and / or one or more groups of MEMS devices. In one example, such adjustments control the flow rate distribution of one or more gases through any of the showerheads 300, 400A, 400B, 500A, 500B. In some such embodiments, the commands instruct one or more individual MEMS devices and / or one or more groups of MEMS devices to adjust the temperature of gases flowing through one or more individual MEMS devices and / or one or more groups of MEMS devices. In one example, such adjustments control the temperature distribution of one or more gases through any of the showerheads 300, 400A, 400B, 500A, 500B.

[0163]

[0172] The instructions in the memory of the master controller 350, 450, 550 may include one or more machine learning / artificial intelligence algorithms that may execute in addition to the operations described herein. As an example, the machine learning / artificial intelligence algorithms executed by the master controller 350, 450, 550 may optimize and modify operating parameters based on one or more sensor measurements obtained by one or more sensors 236, 328, 578, 578A, 578B, 618A-618G. The operating parameters may include, for example, pressure, temperature, gas flow rate, valve member position, and heater status.

[0164]

[0173] One or more machine learning / artificial intelligence algorithms can account for variations in gas flow rates, gas ratios, temperature, and pressure throughout any of the showerheads described herein. In some embodiments, one or more machine learning / artificial intelligence algorithms can measure any of the above parameters to determine whether the proper amount of process gas at the proper pressure and temperature is being delivered to the proper area of ​​the processing space according to the described operations. In some embodiments, one or more machine learning / artificial intelligence algorithms can instruct the master controller 350, 450, 550 to initiate a corrective action to adjust the amount, pressure, or temperature of process gas being delivered to a given area of ​​the processing space.

[0165]

[0174] The above-mentioned flexibility of operation facilitated by the showerhead of the present disclosure is not offered by conventional showerheads. Conventional showerheads are typically configured to achieve optimal distribution of a particular process gas by having a given number of openings of a particular size arranged in a particular pattern. However, the number, size, and arrangement of openings that provide optimal distribution of one process gas does not necessarily provide optimal distribution of a different process gas. In contrast, the showerhead of the present disclosure adjusts the relative flow rate of any process gas through an opening or cluster of openings to provide optimal distribution of any process gas.

[0166]

[0175] The operational flexibility facilitated by the showerhead of the present disclosure provides time and operational efficiencies as compared to conventional operations. For example, some conventional processing sequences include performing a first operation on a substrate using a first process gas in a first processing chamber, then transferring the substrate to a second processing chamber, and then performing a second operation on the substrate using a second, different process gas. In contrast, a processing chamber incorporating a showerhead of the present disclosure can be used to perform both the first operation using the first process gas and the subsequent second operation using the second process gas. Thus, the need for a second processing chamber is reduced, as is the time it takes to move a substrate between processing chambers.

[0167]

[0176] In another example, some conventional processing sequences include performing a first operation on a substrate with a first process gas in a first processing chamber including a first conventional showerhead, then transferring the substrate to a second processing chamber including a second conventional showerhead, and then performing a second operation on the substrate in the processing chamber with a second, different process gas. In contrast, a processing chamber incorporating a showerhead of the present disclosure can be used to perform both a first operation with a first process gas, and a subsequent second operation with a second process gas using the same showerhead in the same processing chamber. Thus, the need to move the substrate between process chambers is reduced, as is the time it takes to move the substrate.

[0168]

[0177] Additionally, the operational flexibility facilitated by the showerheads of the present disclosure allows for greater efficiency in inventory management as compared to conventional operations: use of the showerheads of the present disclosure reduces or eliminates the need to inventory different showerheads configured for use with different process gases for different process operations.

[0169]

[0178] It is contemplated that elements and features of any one embodiment disclosed may be beneficially incorporated in one or more other embodiments. While the above description is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope of the disclosure, the scope of which is determined by the appended claims.

Claims

1. 1. A showerhead for a processing chamber, comprising: Bottom, Top, and A plurality of openings extending from the top surface to the bottom surface. A face plate including: a printed circuit board connected to the face plate; a plurality of MEMS devices coupled to the printed circuit board, each MEMS device associated with one or more unique openings of the plurality of openings and configured to regulate gas flow through a corresponding one or more unique openings; a plurality of local controllers coupled to the printed circuit board, each configured to control operation of a corresponding one of the plurality of MEMS devices independently from operation of other MEMS devices of the plurality of MEMS devices; Including shower head.

2. 10. The showerhead of claim 1, wherein each local controller is configured to receive commands from a separate master controller.

3. 3. The showerhead of claim 2, wherein each local controller is configured to act on received commands addressed to each MEMS device associated with the local controller and to ignore received commands addressed to each MEMS device not associated with the local controller.

4. the printed circuit board is connected to each MEMS device by soldering; the soldering provides a seal between the printed circuit board and each MEMS device; 10. The showerhead of claim 1.

5. 10. The showerhead of claim 1 , wherein the printed circuit board is bonded to the top surface of the faceplate.

6. the printed circuit board including a plurality of ports extending therethrough, each port being associated with a corresponding one of the plurality of MEMS devices; Each MEMS device is Orifice, and a valve member movable between a first position and a second position to regulate fluid flow through said orifice 10. The showerhead of claim 1 , comprising:

7. 7. The showerhead of claim 6, wherein each MEMS device includes a heater configured to heat a fluid conveyed through the orifice.

8. 7. The showerhead of claim 6, further comprising a plurality of heaters, each heater disposed in a corresponding one of a plurality of compartments recessed into the top surface of the faceplate.

9. 7. The showerhead of claim 6, further comprising a manifold coupled to the printed circuit board, the manifold including a first conduit and a plurality of first ducts, each first duct associated with a corresponding first port of the plurality of ports on the printed circuit board.

10. 10. The showerhead of claim 9, wherein the manifold includes a second conduit and a plurality of second ducts, each second duct being associated with a corresponding second port of the plurality of ports on the printed circuit board.

11. the plurality of MEMS devices includes a plurality of first MEMS devices and a plurality of second MEMS devices; each first MEMS device of the plurality of first MEMS devices is associated with a corresponding first port of the plurality of ports; each second MEMS device of the plurality of second MEMS devices is associated with a corresponding second port of the plurality of ports; 11. The showerhead of claim 10.

12. 11. The showerhead of claim 10, wherein each MEMS device of the plurality of MEMS devices is associated with a corresponding first port of the plurality of ports and a corresponding second port of the plurality of ports.

13. a printed circuit board including a plurality of ports extending therethrough; a faceplate including a plurality of MEMS modules coupled to the printed circuit board, each MEMS module comprising: Main unit, a sidewall extending below the body to a base including one or more apertures; and A MEMS device operable to control a gas flow through at least one of said plurality of ports. A face plate including 1. A showerhead for a processing chamber comprising:

14. The MEMS device comprises: an orifice associated with a corresponding one of the plurality of ports; a valve member movable between a first position and a second position to regulate fluid flow through said orifice; 14. The showerhead of claim 13, comprising:

15. 15. The showerhead of claim 14, wherein each MEMS module includes a heater configured to heat a fluid conveyed through the orifice.

16. 14. The showerhead of claim 13, further comprising a local controller coupled to the printed circuit board, the local controller configured to control operation of a corresponding MEMS device of the plurality of MEMS modules.

17. 14. The showerhead of claim 13, further comprising a manifold coupled to the printed circuit board, the manifold including a first conduit and a plurality of first ducts, each first duct associated with a corresponding first port of the plurality of ports on the printed circuit board.

18. 20. The showerhead of claim 17, wherein the manifold includes a second conduit and a plurality of second ducts, each second duct associated with a corresponding second port of the plurality of ports on the printed circuit board.

19. the MEMS device includes a first MEMS device and a second MEMS device; the first MEMS device is associated with a corresponding first port of the plurality of ports; the second MEMS device is associated with a corresponding second port of the plurality of ports; 20. The showerhead of claim 18.

20. A processing chamber comprising: A chamber body; a showerhead disposed within the chamber body, Bottom, top surface, A plurality of compartments recessed in the upper surface; and A plurality of openings extending from each compartment to the bottom surface. A face plate including: a plurality of MEMS devices, each in a corresponding one of the plurality of compartments and configured to regulate a flow of gas to each corresponding compartment; a printed circuit board coupled to the top surface of the faceplate and to each MEMS device; and a controller coupled to the printed circuit board and configured to control operation of at least one MEMS device of the plurality of MEMS devices independently from operation of other MEMS devices of the plurality of MEMS devices. Shower head including a processing chamber comprising:

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