Electrostatic chuck with charge dissipation structure

Abstract

An electrostatic chuck useful for supporting a workpiece during a step of processing the workpiece is described, the electrostatic chuck including a pattern of charge dissipation lines on an insulating layer, the lines having a first conductive layer and a second conductive layer and arranged to define an enclosed field of the insulating layer between the lines.

Description

[Technical field]

[0001] The present disclosure relates to the field of electrostatic chucks useful for supporting a workpiece during a processing step thereof, the electrostatic chuck including a charge dissipation system including a conductive charge dissipation structure on a top surface of the chuck. [Background technology]

[0002] Electrostatic chucks (also called "chucks" for short) are used in the processing of semiconductor and microelectronic devices. The chuck holds a workpiece, such as a semiconductor wafer containing a microelectronic device substrate, in place while a process is performed on the surface of the workpiece. Electrostatic chucks secure the workpiece to the upper surface of the chuck by generating an attractive electrostatic force between the workpiece and the chuck. A voltage is applied to electrodes contained within the multi-layer structure of the chuck, inducing charges of opposite polarity on the workpiece and the chuck.

[0003] Chucks include different structures, devices, and designs that enable the chuck to function or improve performance. A typical electrostatic chuck is in the form of a multi-layer structure that includes a flat top surface of insulating material that supports a workpiece, small embossments on the top surface to form a space between the chuck top surface and the supported workpiece, electrical components such as electrodes to induce an electric charge on the chuck and a connection to an electrical ground, one or more cooling mechanisms for the chuck, the wafer, or both, measurement devices (e.g., to monitor temperature), and lifting mechanisms ("lift pins") that separate the wafer from the chuck top surface.

[0004] Another common feature is a charge dissipation system that includes a conductive coating on the top surface that is connected to an electrical ground and that contacts the bottom surface of the workpiece during use. In use, electrostatic chucks provide a clamping action that attracts a workpiece toward the top surface of the chuck to hold the chuck in place. The clamping action involves the use of an electrostatic force that is generated between the workpiece and the chuck. The force is generated by an electrode in the chuck that, when a voltage is applied to the electrode, induces an opposite electrostatic charge on the back surface of the workpiece to attract the workpiece to the chuck. After a process is performed on the workpiece held in the chuck by the induced electrostatic attraction, the charge in the electrode is removed to remove the induced charge in the workpiece, thereby removing the clamping action and allowing the workpiece to be removed from the top surface of the chuck.

[0005] It is expected that when the charge is removed from the electrode, the induced charge in the workpiece will dissipate, eliminating the electrostatic force between the electrode and the workpiece, allowing the workpiece to be lifted and removed from the chuck. However, often due to material properties, chuck design, and process conditions, there is a measurable delay between the moment the chuck is powered off (removing the charge on the electrode) and the time when the electrostatic charge has been effectively removed from the workpiece and chuck, allowing the workpiece to be removed without significant resistance. This delay due to complete dissipation of the electrostatic charge on the chuck or workpiece is an undesirable event that results in reduced process throughput and can result in wafer damage if residual charges cause the workpiece to stick and become difficult to lift from the top surface of the chuck. Summary of the Invention

[0006] Described below is an "electrostatic chuck assembly" in the form of a multi-layer structure that includes multiple structural, insulating, and electrically functional layers assembled together to form a functional electrostatic chuck, as well as a precursor thereto.

[0007] The described electrostatic chuck is designed to include a charge dissipation structure that includes an "array" or "grid" of interconnected topographies or conductive lines (sometimes called "traces") made of two or more layers of conductive material ("multi-layer" charge dissipation lines) and connected to electrical ground. The array design provides a uniform surface coverage of the lines at the top surface of the electrostatic chuck, facilitating effective removal of charge from the supported workpiece and the main field of the electrostatic chuck. This design also reduces the amount of interference that may be caused by the charge dissipation structure with the primary function of the electrostatic chuck to secure or "clamp" a workpiece to the top surface of the electrostatic chuck during processing of the workpiece.

[0008] Electrostatic chucks provide clamping of the workpiece by electrostatic force induced on the workpiece by the electrodes of the electrostatic chuck. This force is generated by charge induced on the bottom side of the workpiece by a voltage applied to the electrodes of the electrostatic chuck. When the chuck is turned off, i.e., the charge on the electrode layer is removed, the charge induced on the workpiece is expected to disappear, thus eliminating the electrostatic force and allowing the workpiece to be easily lifted from the chuck.

[0009] However, there is often a measurable delay between the moment when the charge is removed from the electrode layer and when all the electrostatic charge is removed from the workpiece. To increase the rate of charge removal from the workpiece and chuck, the upper surface of the chuck can include a highly conductive layer that contacts the chuck and the workpiece and is connected to electrical ground. These layers are sometimes referred to as "charge dissipation layers or structures." Unfortunately, the conductive charge dissipation structure can directly interfere with the primary chuck function of securing the workpiece to the upper surface of the chuck, and the interference is caused by electrostatic forces resulting from the coupling of the electrode layer with this conductive charge dissipation structure rather than the supported workpiece.

[0010] According to this description, the upper surface of the chuck includes a charge dissipation structure that covers at least a small area of ​​the main field, while still providing highly efficient charge transport, and effective clamping can be achieved through the relatively large area portion of the main field that is not covered by the small area charge dissipation structure.

[0011] Such an effective charge dissipation structure may be in the form of an array of interconnected highly conductive paths or lines constructed with an interconnect topography that defines and surrounds the area of ​​the main field bounded by the conductive coating (the area of ​​the "exposed field"). The clamping action remains unhindered in the area of ​​the enclosed field.

[0012] The charge dissipation structure may also incorporate an array of periodically spaced mesas or "embossments" that protrude above the surface of the main field surface.

[0013] Additionally or alternatively, the charge dissipation structure may incorporate a raised vertical structure in the form of a "ridge" or "wall" having a length and a width and forming a circular ring that surrounds a region of the upper surface of the electrostatic chuck.

[0014] The charge dissipation structure includes two separate layers: a first conductive layer and a second conductive coating or layer ("top layer or coating") disposed on the first conductive layer. In some embodiments, the first conductive layer has a higher conductivity and lower resistance than the second conductive layer, and therefore the second conductive layer has a lower conductivity and higher resistance than the first conductive layer. This combination of layers provides highly efficient charge transport with less contamination of the workpiece. Metallic materials for the charge dissipation structure are highly conductive but can introduce elemental metal contamination to the workpiece. To allow the highly conductive metal to be included as a component of the charge dissipation structure, the metal is covered and surrounded by a second conductive top layer. The conductive second layer is substantially free of any mobile metal ions or elemental species and is sufficiently conductive to function as a conductive component of the charge dissipation structure but does not tend to cause elemental metal contamination when used to support a workpiece. The top layer is electrically conductive and also functions to prevent any mobile metal ions or elemental species in the highly conductive metal layer from introducing contamination into the workpiece.

[0015] One aspect of the invention includes an electrostatic chuck comprising an insulating layer on a top surface of the chuck, a charge dissipation structure on the insulating layer, the charge dissipation structure including a first conductive layer on the insulator layer and having a first resistivity, and a second conductive layer on the first conductive layer and having a second resistivity, the second resistivity being higher than the first resistivity, the charge dissipation structure including an interconnect topography extending over the top surface of the insulating layer between which are exposed fields of the insulating layer, and one or more electrodes below the insulating layer, the interconnect topography including one or more electrodes located directly above the one or more electrodes.

[0016] Another aspect of the invention is a method of manufacturing an electrostatic chuck including an insulating layer, the method including forming a charge dissipation structure comprising a first conductive layer on an insulator and having a first resistivity, and a second conductive layer on the first conductive layer and having a second resistivity, the second resistivity being higher than the resistivity of the first conductive layer, the charge dissipation structure comprising an interconnect topography extending above a top surface of the insulating layer, the interconnect topography defining exposed fields of the insulating layer between lines. [Brief description of the drawings]

[0017] [Figure 1] FIG. 2 is a side cutaway view of an illustrated electrostatic chuck assembly. [Figure 2A] FIG. 2 is a top view of an exemplary electrostatic chuck assembly as described, including a depiction of the top surface including an array of main fields and charge dissipation lines as described. [Figure 2B] FIG. 2 is a top view of an exemplary electrostatic chuck assembly as described, including a depiction of the top surface including an array of main fields and charge dissipation lines as described. [Figure 2C] FIG. 2 is a top view of an exemplary electrostatic chuck assembly as described, including a depiction of the top surface including an array of main fields and charge dissipation lines as described. [Figure 2D] FIG. 2 is a top view of an exemplary electrostatic chuck assembly as described, including a depiction of the top surface including an array of main fields and charge dissipation lines as described. [Diagram 3] 1 is a top perspective view of the described electrostatic chuck assembly illustrating the main fields and relative locations of the electrode lines of the electrode layer below the upper insulating layer, and the interconnect topography of the charge dissipation structure located above the upper insulating layer. [Figure 4] FIG. 2 is a side view of an illustrated electrostatic chuck assembly. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] All figures are schematic and not necessarily to scale.

[0019] The described "electrostatic chuck assembly" is a multi-layer device that includes multiple structural, insulating, and electrically functional layers that are assembled together to form a functional electrostatic chuck. As used herein, the term "electrostatic chuck assembly" also refers to a precursor or portion of a functional electrostatic chuck that includes a combination of layers and structures described herein. An electrostatic chuck assembly (including a precursor to a functional electrostatic chuck) may be referred to herein as a "chuck" or an "electrostatic chuck."

[0020] The upper portion of the chuck can be referred to as the "upper surface" (also referred to as the "workpiece support surface"), which includes an insulating layer having an upper surface that constitutes the "main field" of the chuck, a "charge dissipation structure" disposed on the main field at the upper surface of the insulating layer, and embossments that may be located in direct contact with the insulating surface of the main field or may be incorporated into the charge dissipation structure.

[0021] A "charge dissipation structure" comprises at least two distinct layers or structures of conductive material deposited as a stack on the surface of the main field. One conductive layer is the first layer, a highly conductive layer placed directly on top of the insulating layer or "main field". The second conductive layer is a conductive top layer (or "top layer" for short herein) covering the highly conductive layer.

[0022] Optionally, embossments may be present at multiple locations spaced along the length of the charge dissipation structure or layer, and may be located above the first conductive layer (highly conductive layer) and below the second conductive layer (top layer). As noted above, in some embodiments, the first conductive layer has a higher conductivity and lower resistance (resistivity) than the second conductive layer, and therefore the second conductive layer has a lower conductivity and higher resistance (resistivity) than the first conductive layer.

[0023] Also, optionally, one or more seal ring structures may be incorporated into the charge dissipation structure. The seal ring may extend along the length of the charge dissipation structure and be located above the first conductive layer (highly conductive layer) and below the second conductive layer (top layer). The seal ring is a structure in the form of a "ridge" or "wall" that has a length and width and forms a circular ring that surrounds an area of ​​the top surface of the electrostatic chuck. The "seal ring" forms a physical barrier around the outer edge and perimeter of the electrostatic chuck or around an opening in the top surface of the electrostatic chuck, such as an opening through which a lift pin passes.

[0024] The seal ring is designed to trap gas at high pressure between the workpiece supported by the chuck and the area of ​​the main field that is not raised. The seal ring surrounds that area of ​​the main field and maintains the gas at a desired pressure in the area of ​​the main field between the top surface of the main field and the bottom surface of the supported workpiece. The top surface of the seal ring contacts the bottom surface of the workpiece, and by incorporating a portion of the seal ring or the entire length of the seal ring into a charge dissipation structure that has a conductive top coating on the top surface of the seal ring, the conductive top coating contacts the bottom surface of the workpiece, allowing static charge to pass from the workpiece to the conductive top coating, then to the highly conductive layer, then to ground.

[0025] The charge dissipation structures are disposed on the top or second surface of the chuck in an array that includes interconnected segments or lines that intersect to form a plurality of enclosed geometric shapes that divide the main field into a plurality of enclosed shaped regions of the field (areas of "enclosed field"). The lines, segments, or interconnect topographies are configured to be a plurality of shaped closed boundaries around the plurality of enclosed fields of the main field of the upper insulating layer. In some embodiments, the interconnect topographies can be located in a pattern. The shapes may be any closed geometric form, such as a triangle (particularly an equilateral or isosceles triangle), a parallelogram (e.g., a rectangle, a square, or a rhombus), or a hexagon. The shapes and exposed fields of a single array may optionally all be the same size and shape. An array including a repeating pattern of equal sized hexagons, such as a honeycomb pattern, may provide a preferred array by providing a desirably low maximum distance (dmax) between the charge dissipation interconnect topography and any point on the enclosed field, with a desirably low line width and total area of ​​the charge dissipation lines on the top surface of the electrostatic chuck.

[0026] The workpiece support surface includes embossments disposed on the surface to form a space between the main field and the bottom surface of the workpiece supported by the workpiece support surface. When used to support a workpiece using an electrostatic chuck, the workpiece does not rest directly on the main field of the top surface of the chuck, but on a small embossment disposed on the top surface. The embossment has a height that forms a small space between the main field of the chuck and the bottom surface of the workpiece being supported. The embossment may be present on the top surface of the chuck, directly on the main field, or as part of a multi-layer charge dissipation structure, for example between a highly conductive layer and a conductive top layer.

[0027] Additionally or optionally, the workpiece support surface may also include one or more seal rings. The seal rings have a height that creates a small space between the main field of the chuck and the bottom surface of the supported workpiece. The seal rings contact and support the bottom surface of the workpiece. The seal rings, or portions of the seal rings, may be present on the top surface of the chuck, directly on the main field, or as part of a multi-layer charge dissipation structure, for example between a highly conductive layer and a conductive second layer.

[0028] The chuck assembly generally includes the types of structures and components typically included as components of an electrostatic chuck assembly that allow the chuck to support a workpiece (e.g., a semiconductor substrate, a microelectronic device, a semiconductor wafer, precursors thereof) during processing, with electrostatic attraction holding the workpiece in place at the upper surface of the chuck. Exemplary workpieces used in electrostatic chucks include semiconductor wafers, flat screen displays, solar cells, reticles, photomasks, and the like. The workpiece can have an area equal to or greater than the area of ​​a 100 millimeter diameter circular wafer, a 200 millimeter diameter wafer, a 300 millimeter diameter wafer, or a 450 millimeter diameter wafer.

[0029] The chuck includes a workpiece support surface adapted to support the workpiece while the workpiece is processed. To support a circular workpiece, including a circular semiconductor wafer, the workpiece support surface can have a circular surface area with a circular edge that defines a circular perimeter and also defines a diameter of both the workpiece support surface and the multi-layer chuck. To support different types of workpieces having non-circular shapes, the workpiece support surface and the electrostatic chuck can have non-circular shapes to accommodate the different shapes.

[0030] The workpiece support surface includes a "main field" made of an insulating ceramic material with embossments and a charge dissipation structure covering a portion of the main field and dividing the main field into regions of surrounded fields. The workpiece is supported by the workpiece support surface by the embossments, which form a small space between the main field and the underside of the supported workpiece. At least some of the embossments on the workpiece support surface are coated on their upper surface with a portion of the charge dissipation structure (e.g., a conductive top coating). The contacts provide an electrical connection between the workpiece and the charge dissipation structure, allowing charge to be exchanged between the workpiece and the charge dissipation structure.

[0031] The workpiece support surface may include additional embossments that are not in contact with the charge dissipation structure, but are spaced from the charge dissipation lines and in direct contact with the upper insulating layer, which support the workpiece but do not function as part of the charge dissipation structure to remove charge from the workpiece.

[0032] The embossments may be sized and spaced as desired relative to the total surface area of ​​the electrostatic chuck and distributed on the top surface chuck in any manner effective to support a workpiece during use. An example of the amount of useful area of ​​the embossments (total area of ​​the embossments relative to the area of ​​the main field) may be 10% or less of the area of ​​the main field, for example, 8 or 5% or less of the total area of ​​the main field.

[0033] Each embossment can have a useful diameter, with exemplary diameters ranging from about 0.5 millimeters to about 1.5 millimeters, for example, from about 0.75 millimeters to about 1 millimeter. The shape of each embossment is three-dimensional and may be any useful shape, such as a cylindrical shape with a circular upper surface. The height of the embossment may be any useful height, such as a height ranging from 5 or 10 microns to 20, 30, 50, or 100 microns.

[0034] During use of the chuck in processing a workpiece, the workpiece is pressed or "clamped" against a workpiece support surface by an electrostatic attractive force generated between the chuck and the workpiece. To generate the attractive force, a charge (voltage) is applied to an electrode layer beneath the upper insulating layer. The charge applied to the electrode layer induces an opposite charge in the supported workpiece, and the charged workpiece is attracted to the oppositely charged electrode and drawn toward the upper surface of the chuck. An exemplary electrostatic chuck assembly can operate as an AC or DC Coulomb chuck, or a Johnson-Rahbek chuck.

[0035] The charge dissipation structures described herein include two distinct layers of conductive material deposited as separate layers, one placed on top of or above the surface of the upper insulating layer and the other layer on the main field (e.g., as a "vertical stack"). The first conductive layer, located at the bottom of the stack and in direct contact with the surface of the upper insulating layer, is a highly conductive layer. The highly conductive layer can be selected to provide a very high level of electrical conductivity and can be made of a metal or metal alloy.

[0036] Metallic materials as charge dissipation structures can be a source of contamination of the workpiece supported by the chuck, for example in the form of elemental metal contamination originating from the metallic material. The contamination can result from physical interactions between the metallic material and the workpiece. Contact between the workpiece and the metallic charge dissipation structure can allow very small particles of metal to detach from the charge dissipation structure or migrate to the surface of the workpiece. Alternatively, mobile metallic ions or mobile metallic elemental species (at the atomic, ionic, or microscopic scale) can become contaminants, possibly by being transferred (e.g., by diffusion) from the metallic charge dissipation structure to the workpiece.

[0037] To prevent this possible contamination by metallic materials, the charge dissipation structure of the present invention includes a second conductive layer, referred to as a conductive second or layer (or herein for short "second layer / top layer"), covering, sealing and surrounding the highly conductive metallic layer, which can prevent contamination of the workpiece by metal. By having a second conductive layer as described in the present invention, about 90%, in some cases 95%, and in other cases 98% of the contamination by metallic materials can be eliminated. Although the conductive top layer is conductive, it can be made of non-metallic materials, non-metallic alloy materials to avoid potential contamination of the workpiece. The conductive top layer is less conductive than the highly conductive metallic layer, but has a lower risk of introducing contamination to the workpiece.

[0038] As an additional method to prevent the metal of the highly conductive metal layer from contaminating the workpiece, an additional layer ("barrier layer") can be included between the highly conductive metal layer and the conductive top layer. The material of the conductive top layer may not prevent the metal from the highly conductive metal layer from diffusing out of the metal layer and exposing it to the workpiece. Carbon-based and silicon-based materials such as DLC, Si, SiC, SiN, SiOx, etc. are not necessarily highly effective as diffusion barrier materials for metals and metal ions. A diffusion barrier layer may be placed (e.g., deposited) between the metal layer and the top conductive layer as an additional barrier to prevent the metal or metal ions of the highly conductive metal layer from diffusing through the charge dissipation structure and to prevent the diffused metal or metal ions from contacting the workpiece. The diffusion barrier layer may be provided as a thin layer of ALD alumina (<250 nm (nanometers) or even <100 nm) deposited on the metal layer, i.e., an alumina layer deposited on the metal layer by atomic layer deposition ("ALD"). The ALD diffusion barrier layer may be deposited over just the metal layer, the entire charge dissipation structure (including the conductive top layer), or the entire chuck surface (blanket layer, unpatterned) to provide a good barrier between the metal underneath and the workpiece above.

[0039] During use, the upper insulating layer of the chuck and the lower surface and portions of the workpiece supported by the chuck each exhibit an electrostatic charge. The highly conductive layer of the charge dissipation structure may be optionally connected to ground via a switch. The connection to ground may be provided by an electrical lead passing from the charge dissipation structure to the lower / first layer of the chuck by any path. An exemplary path for the ground lead may be vertically through an opening in the upper insulating layer. A different exemplary path for the ground lead may be vertically along the side of the upper conductive layer. In an alternative example, the charge dissipation structure need not be connected to an electrical ground, but instead may inject an opposing charge (relative to the residual electrostatic charge workpiece or upper insulating layer) to balance the residual charge and allow removal of the workpiece from the electrostatic chuck.

[0040] The charge dissipation structures function to remove electrostatic charge from both the main field of the chuck and the workpiece at desired times during processing by allowing charges in the main field and in the workpiece to be conducted to electrical ground through the conductive charge dissipation structures.

[0041] The charge dissipation structure, at least its first conductive layer (i.e., the highly conductive layer), is in direct contact with the main field, such that electrostatic charges present in the main field, i.e., the upper insulating layer, of the chuck can be drained (removed or dissipated) from the main field through the highly conductive layer to ground.

[0042] The charge dissipation structure is also capable of draining charge from a workpiece supported by the chuck. The charge dissipation structure is positioned over the embossments on the upper support layer and contacts the bottom surface of the workpiece during use. Static charge present on the bottom surface of the workpiece can be drained (removed or dissipated) from the workpiece through the conductive top layer, which also contacts a highly conductive layer that connects to electrical ground.

[0043] As an example, FIG. 1 shows a cross-sectional view of the top surface or "chuck support surface" of the described electrostatic chuck assembly. The chuck assembly (or "chuck" for short) 100 includes an upper insulating layer 110 having a top surface forming a main field 104. The charge dissipation structure 130 includes a first conductive layer 132 (a highly conductive layer or a higher conductive layer) and a second conductive layer 134 (also called the "top layer") disposed on or above the first conductive layer 132. The first conductive layer 132 is optionally connected to ground (not shown) via a switch. The embossment 102 is shown as being formed on the top surface of the first conductive layer 132 and below and surrounded by the top coating layer 134. Note that elsewhere along the length of the line of charge dissipation structure 130 where embossments 102 are not present, the top coating layer (or second conductive layer) 134 contacts and completely covers the entire top surface of the first conductive layer 132. Also, as shown, the electrode layer 120 is located below the main field, including the portion of the electrode layer 120 that is located directly below (vertically below) the charge dissipation structure 130.

[0044] Generally, the first conductive layer 132 has a very high conductivity and low resistivity, for example, but not limited to, 1×10 -5 Less than 1×10 ohmmeter -6 Less than 1×10 ohmmeter -5 Less than ohmmeter, or 1×10 -8 ~1×10 -5 It is made of a deposited layer of material having a resistivity of a metal or metal alloy that may be in the ohm-meter range and may be temperature dependent in the range of about 20° C. to about 100° C. Typical materials for the highly conductive layer may be high purity metals or high purity metal alloys made of at least 90, 95, 99, or 99.9% of one or more metals. Useful metals include aluminum and nickel, which may be used alone or in combination as an alloy of two or more of these, optionally with other metals in the alloy.

[0045] The highly conductive layer can have any thickness (i.e., the height of the layer above the surface of the upper insulating layer) that is useful for forming a useful charge dissipation structure having, for example, a desired level of conductivity. Exemplary thicknesses may range from 200 to 500 nanometers, although thicknesses outside this range may also be useful.

[0046] Although high electrical conductivity is desirable for metals or metal alloys used as highly conductive layers, the metals or metal alloys can be a source of contamination for a workpiece supported by the chuck, especially if the metal or metal alloy contacts the workpiece. Metals and metal alloys can generate particles or can migrate from the chuck containing the metal or metal alloy to the bottom surface of a workpiece supported by the chuck due to contact between the metal or metal alloy and the chuck.

[0047] To enable the use of highly conductive metallic materials as components of the charge dissipation structure, while reducing or preventing the metallic material from being a source of contamination to the workpiece, the highly conductive layer is covered by a conductive second layer to prevent the metal of the highly conductive layer from contacting the workpiece or introducing metallic contaminants to the workpiece. A conductive top layer is placed on top of the highly conductive metallic layer to prevent the metal of the highly conductive layer from contacting the workpiece, preferably by completely sealing the highly conductive (metal) layer under a continuous coating of the conductive top layer. Referring to FIG. 1, a charge dissipation structure 130 is shown as having a highly conductive layer 132 completely covered on the top and sides by a top coating 134.

[0048] A second conductive layer 134 is placed on top of the first conductive layer 132 and on top of embossments (e.g., 102) that are incorporated into the charge dissipation structure at selected locations of the charge dissipation structure. When the second conductive layer is coated on top of the embossments, the second conductive layer contacts the bottom side of the supported workpiece during use of the chuck. The second conductive layer is made of a conductive deposited material effective to pass electrostatic charge from the supported workpiece through the second conductive layer to the highly conductive layer (the first conductive layer) and then to ground. The second conductive layer is also selected to be of a type of material that can contact the workpiece with a low risk of contamination of the workpiece compared to metals or metal alloys, preferably with a very low risk of contamination of the workpiece upon contact of the workpiece with the conductive top layer.

[0049] Thus, the conductive second layer material is selected to have a lower electrical conductivity than that of a metal while reducing the potential for contaminating the workpiece. By selecting a top layer material that does not require the high level of electrical conductivity of a metal, the top layer can be selected to be a material that has a reduced risk of contaminating the supported workpiece as compared to a layer of pure metal or metal alloy.

[0050] An exemplary conductive top layer is not a pure metal or pure metal alloy, but is 1×10 -2 Ohm m, less than 1 x 10 -3 Less than ohm-meter, less than 1×10-4 ohm-meter, or less than 1×10 -5 ~1×10 -2 It may be made of a conductive material with a resistivity in the ohm-meter range (approximately 20° C., but can be measured up to 100° C.). Typical materials for the conductive top layer can be conductive polymer materials, conductive glass materials, conductive carbon-based materials, and conductive silicon-based materials. Examples include materials made of at least 95, 99, or 99.9% conductive polymers, conductive glasses, silicon carbide, carbon-nitrogen (e.g., nitrogen-based carbon), diamond-like carbon (DLC). Another example is a conductive nitride material, such as titanium nitride.

[0051] The conductive second layer can have any thickness (i.e., the height of the layer above the surface of the upper insulating layer) that is useful to form a useful charge dissipation structure. Exemplary thicknesses may range from 500 to 1500 nanometers, although thicknesses outside this range may also be useful. The thickness of the conductive second layer may be different in the horizontal and vertical portions of the conductive second layer. Specific thickness measurements may be measured in the horizontal portions of the layer.

[0052] The charge dissipation structure, including a highly conductive layer and a conductive second layer, is conductive and allows charge present on a workpiece in contact with the second conductive layer to pass through the conductive second layer and through the highly conductive layer to electrical ground. The combined resistance of the layers of the charge dissipation structure may be effective to enable the layers to function as described. An exemplary charge dissipation structure has a resistance of 1×10 7 Less than ohms, e.g. 1×10 6 The multi-layer charge dissipation structure may have a measured resistance of less than an ohm, the measured resistance being measured as the resistance between two points on a line of the array of charge dissipation structures over the longest length of the line of the array.

[0053] The charge dissipation structure and any additional structures or layers thereof may be formed on the surface of the main field in a patterned geometric array including lines or interconnected topography that form a closed geometric shape such as a triangle (particularly an equilateral or isosceles triangle), a parallelogram (e.g., a rectangle, square, or rhombus), or a hexagon.

[0054] In a preferred example, the array of charge dissipation structure lines or interconnect topography can be designed to provide a desired balance between different performance properties of the chuck, including balancing effective and rapid dissipation of charge on the main field and supported workpiece, as well as a desirably low or minimal amount of interference with the charge dissipation structure ability of the electrode layer to induce charge on the supported workpiece to clamp the workpiece against the upper surface of the chuck.

[0055] To reduce the degree of interference with the strength of the clamping action of the chuck, the size, i.e., area, of the charge dissipation structure can be reduced or minimized. The width of the line and the total area of ​​the lines of the charge dissipation structure covering the main field can be reduced or minimized. On the other hand, to increase the efficiency and speed of dissipating charge from the main field or the supported workpiece, the distance between the lines and the maximum distance (dmax) between the lines and any point on the main field must be reduced or minimized, which means that the array contains more lines. Also, to increase the efficiency and speed of charge dissipation, the conductivity of the charge dissipation structure, both the highly conductive layer and the conductive second layer, can be increased or maximized.

[0056] A useful array of charge dissipation interconnect topography may be disposed on the top surface of the chuck over a portion of the main field of the upper insulating layer in a pattern including electrically interconnected lines that intersect to form a plurality of exposed geometric shapes. The lines are electrically "interconnected," meaning that the lines of the array are electrically connected at multiple intersections within the array at locations at the top of the two-dimensional upper layer of the chuck assembly (and not simply through a common ground layer at locations below the upper insulating layer).

[0057] The lines or interconnect topography can be made relatively thin and relatively small in area with respect to the amount (percentage) of the area of ​​the lines that cover the main field. Desirably, the total size (area) of the lines of the charge dissipation structure is designed to be small or low so as to cover a low percentage of the area of ​​the main field. The width (w) and total area of ​​the charge dissipation lines are desirably kept low or minimal to reduce interference caused by the lines on the strength of the clamping function of the chuck.

[0058] Exemplary widths of the charge dissipation structures can range from 0.1 to 1.5 millimeters, such as from 0.3 to 1.0 millimeters, and all ranges and subranges therebetween.

[0059] Alternatively or additionally, the area of ​​the array of interconnect topography relative to the area of ​​the main field may be a total area of ​​the interconnect topography on the charge dissipation structure that is less than 15, 10, or 5% of the total area of ​​the main field (i.e., the total area of ​​the surface of the upper insulating layer).

[0060] Desirably, all points on the main field should be equal to or greater than a desired maximum distance (dmax) from the charge dissipation line to allow for rapid charge dissipation of the insulating material of the main field of the electrostatic chuck. The distance dmax can be selected based on a variety of factors, including the width of the charge dissipation line, the area of ​​the exposed field between the interconnect topography, and the electrical conductivity of the material of the upper insulating layer. Examples of useful maximum distances (dmax) between any point on the surface of the upper insulating layer (main field) and the charge dissipation interconnect topography may be 20 millimeters or less, preferably 10 or 15 millimeters or less, for example, in the range of 2, 3, or 5 millimeters to 10, 15, 20 millimeters.

[0061] The interconnected topography preferably forms a repeating pattern of multiple closed, similarly sized and similarly shaped geometric "enclosed fields" of the main field. The interconnected topography encloses and defines a pattern of multiple regularly positioned "exposed fields" that extend across the area of ​​the main field. The lines form multiple closed (continuous, uninterrupted) boundaries that enclose each of the shaped exposed fields of the main field. In some embodiments, the area of ​​the lines is less than 10%, less than 9%, less than 8%, less than 7%, or less than 6% of the total area of ​​the top surface of the chuck, and the area of ​​the enclosed fields is at least 90%, at least 91%, at least 92%, at least 93%, or at least 94% of the total area of ​​the top surface of the chuck.

[0062] The form of the shapes may be any useful closed geometric form. According to a currently preferred example, each side of the enclosed field may be straight rather than curved, although curved lines may also be useful. Also, as currently preferred, all shapes in the pattern defined by the array are identical in size and form. Exemplary shapes include repeating triangles (particularly equilateral or isosceles triangles), parallelograms (e.g., rectangles, squares, or diamonds), and hexagons.

[0063] 2A, 2B, 2C, and 2D are top views of an exemplary electrostatic chuck assembly as described. These figures depict an exemplary top surface including a main field and an array of the described interconnect topography disposed over and covering a portion of the main field, dividing the main field into shaped enclosed fields. The interconnect topography includes a highly conductive layer, a conductive top layer covering the highly conductive layer, and embossments at spaced locations along the length of the charge dissipation line.

[0064] Referring to FIG. 2A, the top surface of an electrostatic chuck assembly to be described, for example the assembly 100 of FIG. 1A, is illustrated. The chuck assembly 100 includes a main field 104 divided into individual square-shaped enclosed fields by an interconnect topography 130. The embossments 102 can be located at positions where the embossments are integrated into the interconnect topography 130, as shown in FIG. 1. Additional embossments 102 may be located within the enclosed fields, directly on the main field 104, away from the interconnect topography 130. A seal ring 114a is located on the periphery of the top surface of the chuck assembly 100. A smaller seal ring 114b is located on the main field 104 and surrounds an opening in the main field 104.

[0065] As shown in FIG. 2A, an array of interconnected interconnect topographies 130 are arranged to form multiple geometric (square) enclosed fields of the main field 104. The width (w) of the lines can be relatively narrow, such as a width in the range of 0.1-1.5 millimeters, for example, 0.3-1.0 millimeters. The total area of ​​the interconnect topographies may preferably be significantly smaller than the total area of ​​the main field 104, which means the total area of ​​the top surface of the upper insulating layer 110. For example, the total area of ​​the charge dissipation lines 130 may be less than 15, 10, 8, or 5% of the total area of ​​the top surface of the upper insulating layer 110 (this total area includes the area of ​​the lines 130 plus the areas of the complete and partial square enclosed fields formed between the lines 130).

[0066] Optionally, as shown, the seal ring 114a at the periphery of the assembly 100 is incorporated into the charge dissipation line 130. In cross section, the interconnect topography 130 at the periphery of the assembly 100 includes a first conductive layer, a "ridge" that extends along the length of the periphery to form the seal ring 114a, and a second conductive layer disposed on the ridge that forms the seal ring. A smaller seal ring 114b surrounding an opening over the main field 104 includes a portion that is incorporated into the charge dissipation line 130.

[0067] FIG. 2B shows an array of interconnected topographies 130 that form an enclosed field that is an equilateral triangle.

[0068] FIG. 2C shows an array of interconnect topographies 130 that form an enclosed field that is hexagonal.

[0069] FIG. 2D shows an array of interconnect topographies 130 that form an enclosed field that is a parallelogram, specifically a diamond.

[0070] 2A-2D show lines of charge dissipation structures above the main fields of the upper insulating layer. These figures do not show the position of the electrodes located below the upper insulating layer relative to the array of lines of charge dissipation structures.

[0071] In general, according to a useful and preferred embodiment of the chuck assembly, an array of electrodes is located under the upper insulating layer, the array of electrodes being located to include lines of electrodes located vertically below the lines of charge dissipation structures. Figure 3 illustrates this arrangement, where the lines of charge dissipation structures 130 (arranged to form an enclosed field in the shape of a parallelogram) are located vertically above the lines of electrodes 112 positioned under the upper insulating layer of the chuck assembly 100. The arrangement of the lines of charge dissipation structures, as well as the arrangement of the embossments, is independent of the arrangement of the pattern of electrodes of the electrode layer, and the lines of charge dissipation structures may vertically overlap the lines of electrodes of the electrode layer.

[0072] The charge dissipation structure and its components, including the highly conductive layer, the conductive second layer, and the embossing, can each be formed using separate but successive deposition steps, and these structures can be deposited successively on the surface of the main field. Any useful technique for forming and applying these structures can be used. Examples include deposition techniques, such as chemical vapor deposition, plasma-enhanced chemical vapor deposition, or similar techniques.

[0073] Metal (including metal alloy) highly conductive layers can be formed by various known methods of depositing metallic materials, examples include sputtering, e-beam evaporation, and thermal evaporation techniques.

[0074] Similarly, the conductive second layer of the charge dissipation structure may be formed by various known methods of depositing metallic materials. According to a currently preferred example, the conductive second layer may include diamond-like carbon (also referred to as "DLC"). Diamond-like carbon is a known material and is sometimes referred to as "CVD diamond" (i.e., diamond deposited by chemical vapor deposition). Diamond-like carbon is a type or class of amorphous carbon material that has properties similar to diamond and contains a mixture of both sp2 and sp3 carbon-carbon atom bonds. Diamond-like carbon may be deposited on a substrate using any of a variety of deposition methods including chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and physical vapor deposition (PVD), among others. Diamond-like carbon may be deposited with a relatively high purity, such as by being formed with at least 90, 95, 98, or 99% (atomic) carbon atoms.

[0075] Optionally, if desired, the physical or electrical properties of the diamond-like carbon can be tailored by including atomic dopants, impurities, or other additives, for example nitrogen atoms as dopants, within the diamond-like carbon structure when preparing the material by deposition.

[0076] The embossment and seal ring structure may be deposited as an insulating material or a semiconducting material, such as silicon-based materials.These are well-known solid materials that contain a significant amount of silicon in combination with one or a combination of carbon, oxygen, and nitrogen atoms.Useful or preferred deposited silicon-based materials may be substantially or completely made of silicon atoms in combination with one or a combination of carbon, oxygen, and nitrogen atoms, for example, containing at least 90, 95, 98, 99, or 99.5% (atoms) of silicon, carbon, oxygen, and nitrogen atoms.

[0077] Examples of known deposited silicon-based materials include silicon nitride (SiN), silicon carbide (SiC), silicon oxide (e.g., silicon dioxide, SiO2), and silicon oxynitride (SiON). These materials may be deposited as embossed structures using any of a variety of deposition methods, including chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), among others. Silicon-based materials can be pattern coated using any of a variety of known pattern coating techniques, such as photolithography.

[0078] A functional chuck assembly (or "chuck" for short) includes several other layers, devices, structures, or features in addition to insulating layers, charge dissipation structures, embossments, etc., that are important for the chuck to function. These include electrode layers that create an electrostatic attraction between the chuck and the workpiece to hold the workpiece in place during processing, grounding devices such as ground layers and associated electrical connections, measurement devices for measuring pressure, temperature, or electrical properties during processing steps, gas flow conduits as part of the temperature control function, conductive surface coatings, as well as others.

[0079] The upper insulating layer can be made of useful insulating materials such as ceramic materials, e.g., alumina, aluminum nitride, quartz, SiO2 (glass), among others. The upper insulating layer has a high resistivity. Typical resistivities for ceramic or insulating materials for use as the upper insulating layer are at least 1×10 12 ohm m, or at least 1×10 13 ohm m or 1 x 10 14 It may have a resistivity of ohms m.

[0080] Useful upper insulating layers may be made of a single (unitary) layer of material, or may alternatively be made of two or more different materials, e.g., multiple layers of different materials, as desired. The thickness of the ceramic layer (having one or more layers of ceramic material) may be any effective thickness based on factors related to the insulating material, the type of chuck, and the desired performance properties of the chuck.

[0081] The layers of the chuck are supported below by a base layer ("base" for short) typically made of metal, such as aluminum, aluminum alloys, titanium, stainless steel, ceramics such as alumina, metal matrix composites, among others.

[0082] Typically between the upper insulating layer and the base there is one or more of an adhesive layer (e.g., a polymer adhesive), an electrode, a ground layer, an insulating layer that enables the electrodes and other layers to function electrically, or additional circuitry.

[0083] One example of a useful chuck assembly is shown in FIG. 4. The chuck assembly 10 includes a base 12, a ceramic layer ("assembly") 14, and a bonding layer 16 that bonds a top surface of the base 12 to a bottom or underside of the ceramic layer 14. The ceramic layer 14 also includes an electrode (not specifically shown) disposed on its bottom surface. A pattern of embossments 18 is present on the top surface of the ceramic layer 14. As shown, a workpiece (shown as a wafer 20) is supported by the embossments. A space 22 exists between the bottom surface of the wafer 20 and the top side of the ceramic layer 14. The space 22 is formed by the embossments 18 located on the top surface of the ceramic layer 14, which supports the wafer 20 a small distance above the top surface of the ceramic layer 14. The space may allow for cooling of the workpiece by a gas in contact with the bottom or backside of the workpiece.

[0084] The chuck assembly as described can be used in equipment and processes useful for processing workpieces using any of a variety of known processing steps involving the use of electrostatic chucks. The described chuck and associated methods can be particularly useful for semiconductor wafer processing, but can also be used for other processes. Examples of equipment and systems in which the electrostatic chuck can be used include beamline ion implanters, plasma doping ion implanters, plasma immersion ion implantation systems, flood ion implanters, focused plasma systems, systems for modulating the plasma sheath, etching systems, optically based processing systems, chemical vapor deposition systems, coating systems, etching systems, lithography systems, and other devices and tools useful for processing semiconductor and microelectronic devices.

[0085] The processes or uses of the electrostatic chuck as described may involve using the chuck for chucking and dechucking a substrate or workpiece. The processes or uses may include those that result in the addition or generation of heat to the workpiece. In some processes, the workpiece is held in a reduced pressure environment in a vacuum chamber while engaged by the chuck, for example during reactive ion etching (RIE), plasma etching, ion beam etching, etching, physical vapor deposition (PVD), chemical vapor deposition (CVD), or other processes. During use or process, the electrostatic chuck may, for example, hold a substrate in a chucking step, undergo coating, implant, or other treatment, and then release the substrate in a dechucking step. These steps or operations may be repeated.

[0086] In a first aspect, an electrostatic chuck includes an insulating layer on a top surface of the chuck and a pattern of charge dissipation lines on the insulating layer, the charge dissipation lines being a first conductive layer on an insulator, the first conductive layer having a conductivity of 1×10 at 20° C. -5 Less than ohmmeter, or 1×10 -6 Less than ohmmeter, or even 1×10-8 The conductive layer includes a first conductive layer having a resistivity of less than an ohm meter, and a second conductive layer on the first conductive layer, the second conductive layer having a resistivity higher than that of the first conductive layer, the pattern including lines extending over a top surface of the insulating layer, the lines including a pattern of charge dissipation lines defining an enclosed field of the insulating layer between the lines, and one or more electrodes below the insulating layer, the pattern of charge dissipation lines including one or more electrodes including lines located vertically above the electrodes. In some cases, the second conductive layer can have a resistivity at least 10 times higher than the first conductive layer. In other examples, it can be 15 or even 20 times higher.

[0087] In a second aspect according to the first aspect, the second conductive layer has a thickness of 1×10 -2 It has a resistivity of less than an ohm meter.

[0088] In a third aspect according to any of the previous aspects, the enclosed field comprises a closed geometric shape.

[0089] In a fourth aspect according to the third aspect, the shape is selected from a rectangle, a square, a diamond, a triangle, a hexagon, and combinations thereof.

[0090] In a fifth aspect according to any of the preceding aspects, the charge dissipation line has a charge density of at least 1×10 measured over the longest length of the charge dissipation line. 7 Has a total resistance of less than ohms.

[0091] In a sixth aspect according to any of the previous aspects, the maximum distance between any location in the exposure field and a line of the array is less than 20 millimeters.

[0092] In a seventh aspect according to any of the preceding aspects, the maximum distance between any location in the exposure field and a line of the array is in the range of 2 to 15 millimeters.

[0093] In an eighth aspect according to any of the previous aspects, the line has a width in the range of 0.1 to 1.5 millimeters.

[0094] In a ninth embodiment according to any of the previous embodiments, the first conductive layer comprises aluminum, nickel, or a combination thereof.

[0095] In a tenth aspect according to any of the previous aspects, the first conductive layer has a thickness in the range of 200 to 500 nanometers.

[0096] In an eleventh aspect according to any of the previous aspects, the second conductive layer comprises a conductive material selected from diamond-like carbon, silicon carbide, doped carbon, and titanium nitride.

[0097] In a twelfth aspect according to any of the previous aspects, the second conductive layer has a thickness in the range of 500 to 1500 nanometers.

[0098] In a thirteenth embodiment according to any of the previous embodiments, the area of ​​the lines is less than 10% of the total area of ​​the top surface of the chuck, and the area of ​​the enclosed field is at least 90% of the total area of ​​the top surface of the chuck.

[0099] A fourteenth aspect according to any of the previous aspects further comprises one or more embossments disposed on the top surface of the insulating layer spaced apart from the charge dissipation lines.

[0100] A fifteenth aspect according to any of the previous aspects further comprises an embossment disposed on the first conductive layer, the second conductive layer being disposed over the embossment.

[0101] A sixteenth aspect according to any of the preceding aspects further includes a seal ring disposed on the first conductive layer, the second conductive layer being disposed over the seal ring.

[0102] A seventeenth aspect according to any of the previous aspects further comprises a barrier layer disposed between the first conductive layer and the second conductive layer.

[0103] In an eighteenth aspect, a method of manufacturing an electrostatic chuck includes forming a pattern of a charge dissipation structure on an insulating layer, the charge dissipation structure comprising a first conductive layer on the insulator, the first conductive layer having a first resistivity, and a second conductive layer on the first conductive layer, the second conductive layer having a second resistivity higher than the resistivity of the first conductive layer, and an interconnect topography extending over a top surface of the insulating layer, the interconnect topography defining an exposed field of the insulating layer between the interconnect topography.

[0104] In a nineteenth aspect according to the eighteenth aspect, the charge dissipation structure comprises a first conductive layer, an embossment disposed on the first conductive layer, and a second conductive layer over the first conductive layer and the embossment.

[0105] In a twentieth aspect according to the eighteenth or nineteenth aspects, the charge dissipation structure comprises a first conductive layer, a seal ring or portion of a seal ring disposed on the first conductive layer, and a second conductive layer over the first conductive layer and the seal ring or portion of the seal ring.

[0106] In a twenty-first aspect according to any of the eighteenth to twentieth aspects, the electrostatic chuck comprises one or more electrodes below an insulating layer, and the interconnect topography includes lines located vertically above the electrodes.

[0107] A twenty-second aspect according to any of the eighteenth to twenty-first aspects further includes depositing a first conductive layer on a surface of the insulating layer, depositing an embossment on the first conductive layer, and depositing a second conductive layer on the first conductive layer and the embossment.

[0108] In a twenty-third aspect according to any one of the eighteenth to twenty-second aspects, the second conductive layer has a concentration of 1×10 -2 It has a resistivity of less than an ohm meter.

[0109] In a twenty-fourth aspect according to any of the eighteenth to twenty-third aspects, the enclosed field comprises a shape selected from a rectangle, a square, a diamond, a triangle, a hexagon, and combinations thereof.

[0110] In a twenty-fifth aspect according to any of the eighteenth to twenty-fourth aspects, the charge dissipation line has a capacitance of 1×10 measured over the longest length of the charge dissipation line. 7 Has a total resistance of less than ohms.

[0111] In a twenty-sixth aspect according to any of the eighteenth to twenty-fifth aspects, the maximum distance between any location in the exposure field and a line of the array is less than 25 millimeters.

[0112] In a twenty-seventh aspect according to any of the eighteenth to twenty-sixth aspects, the first conductive layer includes aluminum, nickel, or a combination thereof.

[0113] In a twenty-eighth aspect according to any of the eighteenth to twenty-seventh aspects, the second conductive layer includes a conductive material selected from diamond-like carbon, silicon carbide, doped carbon, and titanium nitride.

[0114] In a 29th aspect according to any of the 18th to 28th aspects, the area of ​​the line is less than 10% of the total area of ​​the top surface of the chuck, and the area of ​​the exposed field is at least 90% of the total area of ​​the top surface of the chuck.

[0115] A 30th aspect according to any of the 18th to 29th aspects further comprises depositing a barrier layer between the first conductive layer and the second conductive layer.

Claims

1. 1. An electrostatic chuck comprising: an insulating layer on a top surface of the chuck; a charge dissipation structure on the insulating layer, the charge dissipation structure comprising: a first conductive layer on the insulator layer and having a first resistivity; and a second conductive layer overlying the first conductive layer and having a second resistivity, the second resistivity being greater than the first resistivity; Equipped with The charge dissipation structure comprises an interconnect topography extending above the top surface of the insulating layer, with exposed fields of the insulating layer between the interconnect topography. A charge dissipation structure; one or more electrodes beneath the insulating layer, the interconnect topography including one or more electrodes located directly above the one or more electrodes; The electrostatic chuck comprises:

2. The chuck of claim 1 , further comprising an embossment disposed on the first conductive layer, the second conductive layer being disposed over the embossment.

3. 10. The chuck of claim 1, further comprising one or more seal rings disposed on said first conductive layer, said second conductive layer being disposed over said seal rings.

4. The second resistivity is 1×10 －２ 10. The chuck of claim 1, wherein the chuck is sub-ohm metric.

5. 2. The chuck of claim 1, wherein the exposed field of the insulating layer comprises a geometry in which a cumulative distance from each point in the exposed field to a nearest charge dissipation structure is low.

6. The first resistivity is 1×10 －５ The chuck of claim 1 , wherein the chuck length is less than 1 mm.

7. The charge dissipation structure has a charge density of 1×10 measured over the longest length of the charge dissipation structure. ７ 10. The chuck of claim 1 having a total resistance of less than an ohm.

8. 10. The chuck of claim 1, wherein the maximum distance between any location of the exposure field and the charge dissipation structure is less than 20 millimeters.

9. 10. The chuck of claim 1, wherein the maximum distance between any location of the exposure field and the charge dissipation structure is in the range of 2 to 15 millimeters.

10. The chuck of claim 1 , wherein the interconnect topography can be lines having a width in the range of 0.1 to 1.5 millimeters.

11. The chuck of claim 1 , wherein the first conductive layer comprises aluminum, nickel, or a combination thereof.

12. The chuck of claim 1 , wherein the first conductive layer has a thickness in the range of 200 to 500 nanometers.

13. 10. The chuck of claim 1, wherein said second conductive layer comprises a conductive material selected from diamond-like carbon, silicon carbide, doped carbon, and titanium nitride.

14. The chuck of claim 1 , wherein the second conductive layer has a thickness in the range of 500 to 1500 nanometers.

15. an area of ​​the interconnect topography is less than 10% of a total area of ​​the top surface of the chuck; an area of ​​the exposed field is at least 90% of the total area of ​​the top surface of the chuck; 2. The chuck of claim 1.

16. 10. The chuck of claim 1, further comprising one or more embossments disposed on an upper surface of said insulating layer spaced from an interconnect topography.

17. 10. The chuck of claim 1, further comprising a barrier layer disposed between said first conductive layer and said second conductive layer.

18. 1. A method of manufacturing an electrostatic chuck, the method comprising: On the insulating layer, forming a charge dissipation structure, the charge dissipation structure comprising: a first conductive layer on the insulator and having a first resistivity; and a second conductive layer overlying the first conductive layer and having a second resistivity, the second resistivity being higher than the first resistivity of the first conductive layer; The present invention provides the charge dissipation structure comprises an interconnect topography extending above an upper surface of the insulating layer, the interconnect topography defining exposed fields of the insulating layer between the lines; method.

19. The charge dissipation lines are the first conductive layer; an embossment disposed on the first conductive layer; the second conductive layer on the first conductive layer and the embossment; 20. The method of claim 18 comprising:

20. The charge dissipation lines are the first conductive layer; a seal ring or a portion of a seal ring disposed on the first conductive layer; the first conductive layer and the second conductive layer on the seal ring or a portion of the seal ring; 20. The method of claim 19 comprising:

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