Mask, lithographic apparatus, and mask manufacturing method

Abstract

The present invention relates to a mask (100), a lithographic apparatus, and a method for manufacturing the mask (100), comprising an electrolytically reactive layer (110) containing an electrochromic material, a first control circuit layer (120) disposed on a first side of the electrolytically reactive layer (110) and comprising a plurality of first control electrodes (121, H1, H2, H3, H4), and a second control circuit layer (130) disposed on a second side of the electrolytically reactive layer (110) opposite the first side and comprising a plurality of second control electrodes (131, V1, V2, V3, V4). and a second control circuit layer (130), configured such that a light transmission state of a pixel region of the mask (100) is determined by a control voltage between at least a portion of the first control electrode (121, H1, H2, H3, H4) and at least a portion of the second control electrode (131, V1, V2, V3, V4) contained within the pixel region, and the control voltage controls the light transmission state of the pixel region by controlling an ionic bonding state of the electrochromic material in the electrolytic reaction layer (110).

Description

[Technical field]

[0001] (CROSS REFERENCE TO RELATED APPLICATIONS) This application claims priority to Chinese Patent Application No. 202210373942.9, entitled "MASK, LITHOGRAPHIC APPARATUS, AND MANUFACTURING METHOD FOR A MASK," filed on April 11, 2022, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates generally to the field of lithography, and more particularly to a mask, a lithographic apparatus, and a method for manufacturing a mask. [Background technology]

[0003] In lithography technology, pattern structures are typically formed using a mask. However, once the mask is prepared, the pattern on the mask cannot be easily changed. Moreover, if there is a defect in the mask or a defect occurs during the process using the mask, it is also difficult to repair the defect. In addition, masks are typically expensive. All of these above factors can lead to an increase in the cost of chips produced using the mask and a complication of the process due to monitoring the defects of the mask. Therefore, there is a need for new masks in chip production technology. Summary of the Invention

[0004] It is an object of the present disclosure to provide a mask, a lithographic apparatus, and a method for manufacturing a mask.

[0005] According to a first aspect of the present disclosure, there is provided a mask comprising: an electrolytic reaction layer including an electrochromic material; a first control circuit layer provided on a first side of the electrolytic reaction layer and including a plurality of first control electrodes; and a second control circuit layer provided on a second side of the electrolytic reaction layer opposite the first side and including a plurality of second control electrodes, wherein a light transmission state of a pixel region of the mask is configured to be determined by a control voltage between at least a portion of the first control electrode and at least a portion of the second control electrode contained within the pixel region, and the control voltage controls the light transmission state of the pixel region by controlling an ionic bonding state of the electrochromic material in the electrolytic reaction layer.

[0006] In some embodiments, the mask further comprises a substrate, and the first control circuitry layer, the electrolytic reaction layer, and the second control circuitry layer are sequentially laminated on the substrate.

[0007] In some embodiments, the substrate comprises at least one of quartz or calcium fluoride.

[0008] In some embodiments, the electrolysis reaction layer comprises an electrolyte layer, a first electrolyte material layer disposed between the first control circuit layer and the electrolyte layer, and a second electrolyte material layer disposed between the electrolyte layer and the second control circuit layer.

[0009] In some embodiments, at least one of lithium ions or hydrogen ions are soluble in the electrolyte layer.

[0010] In some embodiments, the electrolyte layer comprises a solid electrolyte or the electrolyte layer comprises a liquid electrolyte.

[0011] In some embodiments, one of the first electrolyte material layer and the second electrolyte material layer includes the electrochromic material.

[0012] In some embodiments, one of the first electrolyte material layer and the second electrolyte material layer comprises a magnesium nickel alloy, a magnesium yttrium alloy, niobium oxide, or niobium oxide modified with indium tin oxide nanoparticles.

[0013] In some embodiments, the other of the first electrolyte material layer and the second electrolyte material layer comprises an oxide of a transition metal.

[0014] In some embodiments, the other of the first and second electrolyte material layers comprises tungsten oxide.

[0015] In some embodiments, the electrolyte layer comprises an electrolyte material in the form of a continuous film, the first electrolyte material layer comprises a first electrolyte material in the form of a continuous film, and / or the second electrolyte material layer comprises a second electrolyte material in the form of a continuous film.

[0016] In some embodiments, the electrolyte layer includes a plurality of electrolyte material blocks arranged in an array and the pixel areas of the mask each include one or more electrolyte material blocks; the first electrolyte material layer includes a plurality of first electrolyte material blocks arranged in an array and the pixel areas of the mask each include one or more first electrolyte material blocks; and / or the second electrolyte material layer includes a plurality of second electrolyte material blocks arranged in an array and the pixel areas of the mask each include one or more first electrolyte material blocks.

[0017] In some embodiments, each of the plurality of first control electrodes is connected to a first pole of a controlled power source via a respective first switching device, and each of the plurality of second control electrodes is connected to a second pole of the controlled power source via a respective second switching device.

[0018] In some embodiments, the first control electrodes are each configured to receive a first control signal, and the second control electrodes are each configured to receive a second control signal, to control the light transmission state of the pixel area containing at least a portion of the overlapping first control electrode and at least a portion of the second control electrode.

[0019] In some embodiments, the first control electrode is a first strip electrode extending in a first direction, and the plurality of first control electrodes are arranged in the first control circuit layer and electrically insulated from one another, and the second control electrode is a second strip electrode extending in a second direction perpendicular to the first direction, and the plurality of second control electrodes are arranged in the second control circuit layer and electrically insulated from one another.

[0020] In some embodiments, pixel regions of the mask each comprise at least a portion of a first control electrode and at least a portion of a second control electrode.

[0021] In some embodiments, pixel regions of the mask each comprise at least a portion of a plurality of first control electrodes and at least a portion of a plurality of second control electrodes.

[0022] In some embodiments, the ratio of the area of ​​the region occupied by the first control electrode in the first control circuit layer to the area of ​​the region not occupied by the first control electrode is 100% to 1000%, and / or the ratio of the area occupied by the second control electrode in the second control circuit layer to the area not occupied by the second control electrode is 100% to 1000%.

[0023] In some embodiments, the ratio of the area of ​​the region occupied by the first control electrode in the first control circuit layer to the area of ​​the region not occupied by the first control electrode is equal to the ratio of the area of ​​the region occupied by the second control electrode in the second control circuit layer to the area not occupied by the second control electrode.

[0024] In some embodiments, the plurality of first control electrodes in the first control circuit layer are periodically arranged and / or the plurality of second control electrodes in the second control circuit layer are periodically arranged.

[0025] In some embodiments, the arrangement period of the plurality of first control electrodes in the first control circuit layer is 50 nm to 50 μm, and / or the arrangement period of the plurality of second control electrodes in the second control circuit layer is 50 nm to 50 μm.

[0026] In some embodiments, a spacing period of the first control electrodes in the first control circuitry layer is equal to a spacing period of the second control electrodes in the second control circuitry layer.

[0027] In some embodiments, the first control electrode comprises at least one of indium tin oxide, aluminum doped zinc oxide, conductive diamond, or conductive aluminum nitride, and / or the second control electrode comprises at least one of indium tin oxide, aluminum doped zinc oxide, conductive diamond, or conductive aluminum nitride.

[0028] In some embodiments, the first control circuit layer has a thickness of 10 nm to 100 nm and / or the second control circuit layer has a thickness of 10 nm to 100 nm.

[0029] In some embodiments, the first control electrode has an electrical resistance less than that of the electrolytic reaction layer, and the second control electrode has an electrical resistance less than that of the electrolytic reaction layer.

[0030] In some embodiments, the total thickness of the electrolytic reaction layer, the first control circuitry layer, and the second control circuitry layer is less than 100 μm.

[0031] According to a second aspect of the present disclosure, there is provided a lithographic apparatus comprising: a mask as described above; and a control module configured to generate, according to a layout, a plurality of first control signals to be applied to the plurality of first control electrodes and a plurality of second control signals to be applied to the plurality of second control electrodes, respectively, wherein a light transmission state of pixel regions of the mask corresponds to the layout.

[0032] According to a third aspect of the present disclosure, there is provided a method for manufacturing a mask, the method including: providing a substrate; forming a first control circuit layer having a pattern on the substrate, the first control circuit layer having a pattern comprising a plurality of control electrodes; forming an electrolytic reaction layer including an electrochromic material on the first control circuit layer; and forming a second control circuit layer having a pattern on the electrolytic reaction layer, the second control circuit layer having a pattern on the electrolytic reaction layer, the second control circuit layer having a pattern on the electrolytic reaction layer, the second control circuit layer having a pattern comprising a plurality of second control electrodes, wherein a light transmission state of a pixel region of the mask is determined by a control voltage between at least a portion of the first control electrode and at least a portion of the second control electrode contained within the pixel region, and the control voltage controls the light transmission state of the pixel region by controlling an ionic bonding state of the electrochromic material in the electrolytic reaction layer.

[0033] In some embodiments, forming the electrolysis reaction layer on the first control circuit layer includes sequentially laminating a first electrolyte material layer, an electrolyte layer, and a second electrolyte material layer together to form the electrolysis reaction layer, and forming the electrolysis reaction layer on the first control circuit layer, the first electrolyte material layer being disposed between the first control circuit layer and the electrolyte layer.

[0034] In some embodiments, forming the electrolysis reaction layer on the first control circuitry layer includes forming a first electrolyte material layer on the first control circuitry layer, forming an electrolyte layer on the first electrolyte material layer, and forming a second electrolyte material layer on the electrolyte layer.

[0035] The accompanying drawings, which constitute a part of this specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the disclosure.

[0036] The present disclosure may be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which: [Brief description of the drawings]

[0037] [Figure 1] FIG. 1 is a structural schematic diagram of a mask according to an exemplary embodiment of the present disclosure.

[0038] [Diagram 2] FIG. 2 is a schematic diagram of a control circuit including a first control circuit layer and a second control circuit layer according to an exemplary embodiment of the present disclosure.

[0039] [Diagram 3] FIG. 3 is a schematic diagram of one state of the control circuit for adjusting the light transmission state of the pixel regions of the mask.

[0040] [Figure 4] FIG. 4 is a schematic diagram of the light transmission state of pixel areas of a mask in the state of the control circuit of FIG.

[0041] [Diagram 5] FIG. 5 is a schematic diagram of another state of the control circuit for adjusting the light transmission state of the pixel regions of the mask.

[0042] [Figure 6] FIG. 6 is a schematic diagram of the light transmission state of pixel areas of a mask in the state of the control circuit of FIG.

[0043] [Figure 7] FIG. 7 is a structural schematic diagram of a lithographic apparatus according to an exemplary embodiment of the present disclosure.

[0044] [Figure 8] FIG. 8 is a schematic flow diagram of a method for manufacturing a mask according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0045] The present disclosure will be described below with reference to the accompanying drawings showing some embodiments of the present disclosure. However, it should be understood that the present disclosure can be presented in many different forms and is not limited to the embodiments described below. Indeed, the embodiments described below are intended to make the disclosure of the present disclosure more complete and fully convey the scope of protection of the present disclosure to those skilled in the art. It should also be understood that the embodiments disclosed herein can be combined in various ways to provide many additional embodiments.

[0046] It should be understood that like reference numerals represent like elements in all drawings, and in the drawings, the size of certain features may be distorted for clarity.

[0047] It should be understood that the terms in this specification are used only to describe certain embodiments and are not intended to limit the present disclosure. All terms (including technical and scientific terms) used in this specification have the meanings commonly understood by those skilled in the art unless otherwise defined. For the sake of brevity and / or clarity, well-known functions or structures may not be described in detail.

[0048] As used herein, the terms "comprising," "comprising," and "containing" indicate the presence of a stated feature but do not exclude the presence of one or more other features. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. As used herein, the terms "between X and Y" and "between about X and Y" should be interpreted to include X and Y. As used herein, the term "between about X and Y" means "between about X and about Y," and the term "about X to Y" as used herein means "about X to about Y."

[0049] As used herein, when an element is described as being "on," "attached," "connected," "coupled," or "in contact with" another element, the element may be directly on, attached, connected, coupled, or in contact with the other element, although intermediate elements may be present. In contrast, when an element is described as being "directly on," "directly attached," "directly connected," "directly coupled," or "in direct contact with" another element, intermediate elements are not present. As used herein, a feature located "adjacent" to another feature may refer to the feature having an overlap with the adjacent feature or being located above or below the adjacent feature.

[0050] As used herein, spatial relationship terms such as "above," "below," "left," "right," "front," "back," "high," and "low" may describe the relationship between one feature and another feature in the accompanying drawings. It should be understood that the spatial relationship terms encompass different orientations of the device in use or operation in addition to the orientation shown in the drawings. For example, when a device in the drawings is inverted, a feature that would otherwise be described as being "below" another feature may then be described as being "above" that other feature. The device may also be otherwise oriented (rotated 90 degrees or otherwise) and the relative spatial relationships may be interpreted accordingly.

[0051] In the research of micro-nano devices and the manufacturing process of semiconductor chips, the structure of a desired device or chip is typically formed using a mask-based lithography technique. To form the desired structure, one or more masks may be fabricated in advance according to the layout of the device or chip to be processed and in light of the corresponding processing procedure. In this case, the pattern on each mask may correspond to one layer in the layout or multiple layers that can be prepared in the same procedure. Typically, the mask may comprise a substrate (e.g., quartz glass) that can transmit an exposure beam (e.g., ultraviolet light) to change the properties of the resist (photoresist), and a plating film (e.g., metal chrome film) deposited on the substrate to prevent the ultraviolet light from passing through.

[0052] In the method for manufacturing a mask, a chromium film having a thickness of several tens of nanometers and a resist placed on the chromium film can be successively deposited on a quartz glass, and then a desired pattern can be formed on the resist by direct laser writing or electron beam exposure, and then the chromium exposed from the resist can be wet-etched or dry-etched to form a pattern corresponding to a desired structure on the chromium film. The direct laser writing method is typically used to form a mask having a minimum line width larger than 300 nm, and the electron beam exposure method can be used to form a mask having a minimum line width less than 300 nm.

[0053] Using the above preparation method, the cost of just one mask is about tens of thousands of dollars, and the cost of a complete set of masks for a complete device or chip production process can reach millions of dollars. Moreover, once such a mask is prepared, it is difficult to change its structure. In traditional application scenarios, the single batch quantity of chips including CPU, DRAM, flash memory, and the like is typically on the order of millions or even hundreds of millions, so the mask fabrication cost can be fully shared, and the mask-based lithography process can be widely applied to the fabrication and production of these devices or chips. However, with the development of industries such as IoT, artificial intelligence, and personalized medicine, small batch production of devices or chips is increasingly required, and the number of these devices or chips may be only tens of thousands or even less. If a mask is prepared in advance and these devices or chips are produced based on the mask, it becomes difficult to share the mask fabrication cost by a sufficient number of devices or chips, and as a result, the cost of the devices or chips increases greatly. In addition, when these devices or chips are directly fabricated by laser direct writing, the yield is too low to meet the requirements of mass production, while the minimum line width of laser direct writing, which is about 300 nm, also restricts the improvement of chip integration and performance and the reduction of chip cost by miniaturizing the device. Similarly, when these devices or chips are directly fabricated by electron beam exposure, although it is possible to fabricate smaller and more integrated devices or chips, the yield is still too low to meet the requirements of production volume and the processing cost is very high, which prevents the penetration of these devices and chips into the market.

[0054] In addition, defects in a mask can also significantly increase the production costs of a device or chip: if a small defect is present in a mask, time must be spent to detect and repair the defect, and if a large defect is present in a mask, the entire mask may have to be discarded.

[0055] In order to solve the above problems, meet the requirements of small batch production of chips and high integration of related products, and enable future technologies such as IoT and artificial intelligence to be better penetrated into society, the present disclosure provides a digital lithography mask that is programmable, rewritable, and even reusable. In such a mask, the light transmission state of the corresponding pixel area of ​​the mask can be changed by controlling the ionic bond state of the electrochromic material in the electrolysis reaction layer. This allows the pattern on the same mask to be changed as needed, thereby realizing the reuse of the mask and further reducing the production cost of the device or chip. The electrochromic material can be bonded with cations or anions, and may be light-impermeable in the ionic bond state while light-transmitting in the non-ionic bond state, or may be light-transmitting in the ionic bond state while light-impermeable in the non-ionic bond state, and is not limited thereto in the present specification. Hereinafter, the present specification will explain in detail the various state changes in the mask by giving examples in which the electrochromic material is combined with hydrogen ions and / or lithium ions, although it should be understood that adjustment of the light transmission state in the mask can also be achieved by employing other electrochromic materials and ionic systems.

[0056] In an exemplary embodiment of the present disclosure as shown in FIG. 1, the mask may include an electrolytically reactive layer 110, a first control circuitry layer 120, and a second control circuitry layer 130.

[0057] The electrolytically reactive layer 110 may include an electrochromic material whose transmittance may change with a change in its ionic bonding state. When the electrochromic material is in a non-light-transmitting state, it may block an exposure beam, such as ultraviolet light, for modifying the resist. On the other hand, when the electrochromic material is in a light-transmitting state, it may transmit ultraviolet light or the like for modifying the resist. The transmitted ultraviolet light may then help expose the resist in the corresponding area of ​​the device or chip to form the desired device or chip structure.

[0058] In some embodiments as shown in FIG. 1, the electrolysis reaction layer 110 may include an electrolyte layer 111, a first electrolyte material layer 112, and a second electrolyte material layer 113. In the electrolyte layer 111, for example, at least one of lithium ions or hydrogen ions may be soluble. By applying an electric field, the lithium ions and / or hydrogen ions can be moved in a desired direction in the electrolyte layer 111 and then combined with the electrochromic material in the first electrolyte material layer 112 or the second electrolyte material layer 113. As a result, the electrochromic material becomes non-transmissive, thus forming a non-transmissive region in the mask. In addition, by applying a reverse electric field, the lithium ions or hydrogen ions that were combined with the first electrolyte material layer 112 or the second electrolyte material layer 113 can be extracted and desorbed from the first electrolyte material layer 112 or the second electrolyte material layer 113. As a result, the electrochromic material becomes non-transmissive, thus forming a non-transmissive region in the mask.

[0059] 1, a first electrolyte material layer 112 may be disposed between the first control circuit layer 120 and the electrolyte layer 111, and a second electrolyte material layer 113 may be disposed between the electrolyte layer 111 and the second control circuit layer 130. An electric field applied to an individual pixel region in the electrolytic reaction layer 110 may be controlled by the cooperation of the first control circuit layer 120 and the second control circuit layer 130 to change the light transmission state of the corresponding pixel region, as will be described in more detail below.

[0060] In some embodiments, the electrolyte layer 111 may be in a solid or liquid state, in other words, the electrolyte layer 111 may include a solid electrolyte or a liquid electrolyte. In the case where the electrolyte layer 111 is a solid electrolyte, after the electric field applied to the mask is removed, the movement of ions may still be well restricted, and thus the light-transmitting and light-non-transmitting areas of the mask may be well maintained. In the case where the electrolyte layer 111 is a liquid electrolyte, after the electric field applied to the mask is removed, the light-transmitting and light-non-transmitting areas of the mask may change slowly, and thus their stability may become poorer (although it should be understood that even when the stability is poor, it may generally satisfy the requirements of lithography). However, at the same time, in the case where the electrolyte layer 111 is a liquid electrolyte, in the process of generating the corresponding light-transmitting region or light-transmitting region on the mask, the ions may move faster in the liquid electrolyte, and thus be bonded to or desorbed from the first electrolyte material layer 112 or the second electrolyte material layer 113 faster, so that the switching between the light-transmitting state and the light-non-transmitting state in the corresponding region may be achieved faster. In practical applications, the corresponding electrolyte layer may be selected according to requirements.

[0061] In some embodiments, the first electrolyte material layer 112 and the second electrolyte material layer 113 in the electrolytic reaction layer 110 may be formed using a material that is transparent to ultraviolet light or the like for lithography and has a certain electrical conductivity. At least one of the first electrolyte material layer 112 and the second electrolyte material layer 113 is an electrochromic material. In a specific example, the electrochromic material is a magnesium-nickel alloy (Mg-Ni), a magnesium-yttrium alloy (Mg-Y), niobium oxide (NbO x ) glass or niobium oxide (NbO) modified with indium tin oxide (ITO) nanoparticles. x The other of the first electrolyte material layer 112 and the second electrolyte material layer 113 may contain an oxide of a transition metal such as tungsten oxide (WO3). A reversible change in the light transmission state for ultraviolet light in the wavelength range of 365 to 405 nm can be realized using reversible hydrogenation for Mg-Ni or Mg-Y. On the other hand, a reversible change in the light transmission state for ultraviolet light around 405 nm can be realized using NbO modified with ITO nanoparticles. x This can be achieved using membrane materials.

[0062] In some embodiments, the electrolysis reaction layer 110 may be in the form of a continuous film. Specifically, the electrolyte layer 111 in the electrolysis reaction layer 110 may include an electrolyte material in the form of a continuous film, the first electrolyte material layer 112 may include a first electrolyte material in the form of a continuous film, and the second electrolyte material layer 113 may include a second electrolyte material in the form of a continuous film. The electrolysis reaction layer 110 in the form of a continuous film is easy to prepare in a mask, and thus does not have a problem in aligning with other components in the mask (e.g., the first control electrode 121 in the first control circuit layer 120 and the second control electrode 131 in the second control circuit layer 130) during the mask manufacturing process. Therefore, the manufacturing cost of the mask can be effectively reduced. In addition, by using a material with high electrical resistance in the electrolysis reaction layer 110, it is possible to avoid electric field interference between adjacent regions, so that the light-transmitting and light-non-transmitting regions of each region can be independently controlled.

[0063] However, in some other embodiments, one or more layers in the electrolytically reactive layer 110 may be provided as a plurality of blocks arranged in an array (e.g., a rectangular array) and each pixel region of the mask may include one or more adjacent blocks (e.g., each pixel region may include one block, or each pixel region may include 2 x 2, total of four adjacent blocks) to further improve isolation between individual pixel regions of the mask, avoid electric field interference between adjacent pixel regions, and such that the electrochromic material in each pixel region is controlled solely or substantially independently by the electric field applied to the pixel region. Specifically, the electrolyte layer 111 may include a plurality of electrolyte material blocks arranged in an array, and each pixel area of ​​the mask may include one or more electrolyte material blocks; and / or the first electrolyte material layer 112 may include a plurality of first electrolyte material blocks arranged in an array, and each pixel area of ​​the mask may include one or more first electrolyte material blocks; and / or the second electrolyte material layer 113 may include a plurality of second electrolyte material blocks arranged in an array, and each pixel area of ​​the mask may include one or more second electrolyte material blocks. However, in this case, the problem of aligning layers in the electrolytic reaction layer 110 or between the electrolytic reaction layer 110 and other components in the mask (e.g., the first control electrode 121 in the first control circuit layer 120 and the second control electrode 131 in the second control circuit layer 130) during the process of preparing the mask must generally be considered, which may lead to an increase in the cost of the mask.

[0064] As shown in Figures 1, 2, 3 and 5, a control circuit similar to a charge-coupled device (CCD) driver in a digital camera or a display driver in a display may be employed to control the light transmission state of each pixel area of ​​the mask. Specifically, a first control circuit layer 120 may be provided on a first side of the electrolytic reaction layer 110, and the first control circuit layer 120 may include a plurality of first control electrodes 121. Similarly, a second control circuit layer 130 may be provided on a second side of the electrolytic reaction layer 110 opposite to the first side, and the second control circuit layer 130 may include a plurality of second control electrodes 131. One of the first control electrode 121 and the second control electrode 131 is similar to a scan line in a CCD driver circuit or a display driver circuit, while the other of the first control electrode 121 and the second control electrode 131 is similar to a data line in a CCD driver circuit or a display driver circuit. At least a portion of each first control electrode 121 may overlap at least a portion of a corresponding second control electrode 131 in the thickness direction of the mask, in which case the intersection region of the first control electrode 121 and the second control electrode 131 of the mask may be controlled by the electric field between the first control electrode 121 and the second control electrode 131, i.e., ions in the electrolyte layer 111 may move in the intersection region under the action of the electric field, whereby the ions are combined with the electrochromic material in the first electrolyte material layer 112 or the second electrolyte material layer 113, or are desorbed from the electrochromic material in the first electrolyte material layer 111 or the second electrolyte material layer 113, thereby changing the light transmission state in the intersection region. In other words, the light transmission state of a pixel region of the mask can be configured to be determined by a control voltage between at least a portion of the first control electrode 121 and at least a portion of the second control electrode 131 contained within the pixel region, or by a load history of a control voltage between at least a portion of the first control electrode 121 and at least a portion of the second control electrode 131 contained within the pixel region.Here, the corresponding portion of the first control electrode 121 and the corresponding portion of the second control electrode 131 overlap in the thickness direction of the mask, and the control voltage controls the ionic bonding state of the electrochromic material in the electrolytic reaction layer 110, thereby controlling the light transmission state of the pixel area.

[0065] In some embodiments, each intersection region may be formed as a pixel region (e.g., each minimum shadow region shown in FIGS. 4 and 6 may be considered as a pixel region in a non-light-transmitting state). In other words, each pixel region of the mask may include at least a portion of a first control electrode and at least a portion of a second control electrode (e.g., each pixel region includes a portion of a first control electrode and a portion of a second control electrode that overlap each other). Alternatively, in some other embodiments, a pixel region may be formed by a plurality of intersection regions that are adjacent to each other (e.g., as shown in FIGS. 4 and 6, a region represented by a dashed box including four intersection regions may be considered as a pixel region in a non-light-transmitting state). In other words, each pixel region of the mask may include at least a portion of a plurality of first control electrodes and at least a portion of a plurality of second control electrodes (e.g., including a portion of each of the first electrodes of the two first control electrodes and a portion of each of the second control electrodes of the two second control electrodes).

[0066] In some embodiments, such as those shown in Figures 2, 3, and 5, each of the plurality of first control electrodes (H1, H2, H3, and H4) may be respectively connected to a first pole (e.g., a cathode as shown in the figures) of a controlled power source via a respective first switching device (SH1, SH2, SH3, and SH4), while each of the plurality of second control electrodes (V1, V2, V3, and V4) may be respectively connected to a second pole (e.g., an anode as shown in the figures) of a controlled power source via a respective second switching device (SV1, SV2, SV3, and SV4). In this way, the voltage applied to each control electrode can be controlled by controlling the on or off state of each switching device, and the light transmission state of each pixel area of ​​the mask is controlled. Furthermore, as described above, in the electrolytic reaction layer 110, even if the applied external electric field is removed, the ions in each region can still be bound or unbound with the electrochromic material, and therefore the light transmission state of each pixel region of the mask can be controlled by stepwise controlling one or more first switching devices and one or more second switching devices. The switching devices may include devices such as field effect transistors, but are not limited thereto herein. In some embodiments, the switching devices may be cooperatively provided in the control circuit layer of the mask. Alternatively, in some other embodiments, the switching devices may be provided outside the mask to avoid interference with the light transmission state of each pixel region of the mask. As described below, in some embodiments, the respective control signals may be directly applied to the control electrodes, thereby eliminating the switching devices.

[0067] In the embodiment shown in Figures 3-6, if it is desired to form light non-transmitting regions on the mask as shown in Figure 6 (the shaded areas shown in the figures), this can be done in two steps.

[0068] First, as shown in Fig. 3, by switching on the switching devices SH1, SH2, SV1, and SV2 and switching off the switching devices SH3, SH4, SV3, and SV4, an electric field from the second control electrode V1 toward the first control electrode H1 is applied to the intersection region of the first control electrode H1 and the second control electrode V1, so that the hydrogen ions and / or lithium ions in the electrolyte layer 111 in the region move toward the first control electrode H1 and combine with the electrochromic material in the first electrolyte material layer 112 in the region. In this way, the intersection region of the first control electrode H1 and the second control electrode V1 of the mask is in a non-light-transmitting state. Similarly, the intersection region of the first control electrode H1 and the second control electrode V2, the intersection region of the first control electrode H2 and the second control electrode V1, and the intersection region of the first control electrode H2 and the second control electrode V2 are all presented in a non-light-transmitting state. However, in other areas of the mask, since the electric field is not formed, the hydrogen ions and / or lithium ions in the electrolyte layer 111 are not combined with the electrochromic material, so that the electrochromic material is still maintained in a light-transmitting state, and thus the corresponding areas of the mask are in a light-transmitting state. In conclusion, a mask having a pattern as shown in FIG. 4 can be formed.

[0069] Then, as shown in Fig. 5, by switching on the switching devices SH3, SH4, SV3, and SV4 and switching off the switching devices SH1, SH2, SV1, and SV2, an electric field from the second control electrode V3 toward the first control electrode H3 is applied to the intersection region of the first control electrode H3 and the second control electrode V3, so that the hydrogen ions and / or lithium ions in the electrolyte layer 111 in the region move toward the first control electrode H3, and are thereby combined with the electrochromic material in the first electrolyte material layer 112 in the region. In this way, the intersection region of the first control electrode H3 and the second control electrode V3 of the mask becomes a light non-transmitting region. Similarly, the intersection region of the first control electrode H3 and the second control electrode V4, the intersection region of the first control electrode H4 and the second control electrode V3, and the intersection region of the first control electrode H4 and the second control electrode V4 are all presented as light non-transmitting regions. However, in other areas of the mask, since the electric field is not formed, the ions can maintain their original state, so that the intersection area of ​​the first control electrode H1 and the second control electrode V1, the intersection area of ​​the first control electrode H1 and the second control electrode V2, the intersection area of ​​the first control electrode H2 and the second control electrode V1, and the intersection area of ​​the first control electrode H2 and the second control electrode V2 are still maintained in a light non-transmitting state, while the remaining areas are maintained in a light transmitting state. In conclusion, a mask having a pattern as shown in FIG. 6 can be formed.

[0070] In some embodiments, to achieve automatic control of the pattern on the mask, the first control signal applied to each of the first control electrodes and the second control signal applied to each of the second control electrodes can be generated based on one or more mask patterns to be formed. The first control signal and the second control signal can be applied on the first control electrodes and the second control electrodes directly or through respective switching devices (as shown in Figs. 2, 3 and 5). By setting the level states of the first control signal and the second control signal at each time interval, the light transmission state of the pixel area including at least a part of the first control electrode and at least a part of the second control electrode of the overlapping mask can be changed automatically and continuously, and in some cases, the switching device can be omitted or manually changing the on or off state of each switching device can be avoided.

[0071] It should be understood that in other examples, the mask may include a greater or lesser number of first and second control electrodes. For example, but not limited to, 1000-100,000 first control electrodes and 1000-100,000 second control electrodes may be formed on the mask to form pixel areas on the order of 1000×1000-100,000×100,000. Furthermore, but not limited to, in some embodiments, different orientations of the first and second poles (anodes and cathodes) of the control power source may cause ions to couple with the electrochromic material provided on the second electrolyte material layer 131 to form light non-transmitting regions. Furthermore, but not limited to, in some embodiments, the on or off state of different numbers of switching devices connected to different numbers of control electrodes may be controlled separately at each step of forming the mask pattern, depending on the desired mask pattern.

[0072] In addition, when the pattern on the mask needs to be erased or changed, i.e., when the light-transmitting state of one or more pixel regions on the mask needs to be changed, the control power source can be reversed so that the mask can be used for preparing other different structures. That is, the first pole and the second pole (anode and cathode) of the control power source are exchanged by combining the on or off of the respective switching devices. As a result, the ions bound to the electrochromic material are desorbed, and thus the region is converted to a light-transmitting state.

[0073] In order to simplify the structure of the control circuit layer, the light transmission state of each pixel region of the mask is controlled by using as few switching mechanisms or control signals as possible. As shown in Figures 1, 2, 3 and 5, the first control electrode 121 may be a first strip electrode extending in a first direction, and a plurality of first control electrodes 121 may be arranged in the first control circuit layer 120 in a manner electrically insulated from each other, so that the voltage applied to each of the first control electrodes can be controlled individually. Similarly, the second control electrode 131 may be a second strip electrode extending in a second direction perpendicular to the first direction, and a plurality of second control electrodes 131 may be arranged in the second control circuit layer 130 in a manner electrically insulated from each other, so that the voltage applied to each of the second control electrodes 131 can be controlled individually. Furthermore, by providing the first strip electrode and the second strip electrode, the crossing region between the first control electrode and the second control electrode can be conveniently formed without performing complicated alignment in the process of preparing the mask. However, it should be understood that in some other embodiments, the control electrode 131 may be arranged in other shapes to control the light transmission state of each crossing region, as long as the electric field in the thickness direction of the mask applied to the overlapping portion between the first control electrode 121 and the second control electrode 131 can be independently controlled, and this specification is not limited thereto. For example, when the mask has a large area, two or more first strip electrodes or second strip electrodes may be provided in the same horizontal or vertical direction to avoid excessive attenuation of the control signal applied across different regions of the electrodes, etc.

[0074] In some embodiments, the ratio of the area occupied by the first control electrode 121 in the first control circuit layer 120 to the area not occupied by the first control electrode 121 may be 100% to 1000%. Similarly, the ratio of the area occupied by the second control electrode 131 in the second control circuit layer 130 to the area not occupied by the second control electrode 131 may be 100% to 1000%. On the other hand, the larger the ratio, the larger the area occupied by the control electrode in the corresponding control circuit layer, and when the area is set as a non-light-transmitting area, the better the effect of blocking ultraviolet light. In particular, in the case where one pixel area is formed by multiple intersection areas, the smaller the gap between adjacent electrodes in the pixel area, the better the light blocking performance. However, a small interval between control electrodes in the same control circuit layer may cause increased difficulty in preparing a control electrode array. For example, the proximity effect or the like may cause the spacing between adjacent control electrodes to be smaller than the designed spacing or even to be almost zero, thereby causing short circuits or the like between adjacent control electrodes. On the other hand, the smaller the above ratio, the more helpful it is to reduce the difficulty in preparing the control electrode array, but when the spacing between the control electrodes in the same control circuit layer is large, the ultraviolet light blocking effect may also be reduced. Especially in the case where one pixel area is formed by multiple intersection areas, when it is desired to adjust the pixel area to a light non-transmitting state, the gap between the control electrodes may cause a certain percentage of light leakage.

[0075] In some embodiments, the ratio of the area of ​​the region occupied by the first control electrode 121 to the area of ​​the region not occupied by the first control electrode 121 in the first control circuit layer 120 may be equal to the ratio of the area of ​​the region occupied by the second control electrode 131 to the area of ​​the region not occupied by the second control electrode 131 in the second control circuit layer 130. In this way, each intersection area has substantially the same distribution in the horizontal and vertical directions, which helps simplify the mask preparation process.

[0076] In some embodiments, the first control electrodes 121 in the first control circuit layer 120 may be periodically arranged, and similarly, the second control electrodes 131 in the second control circuit layer 130 may be periodically arranged. In this way, the size of each intersection area or each pixel area may be equal to each other. Furthermore, the arrangement period of the first control electrodes 121 in the first control circuit layer 120 may be 50 nm to 50 μm, and similarly, the arrangement period of the second control electrodes 131 in the second control circuit layer 130 may be 50 nm to 50 μm. In a specific example, the arrangement period of the first control electrodes 121 in the first control circuit layer 120 may be 5 μm, and / or the arrangement period of the second control electrodes 131 in the second control circuit layer 130 may be 5 μm. It should be appreciated that the smaller the placement period of the control electrodes, the greater the pattern accuracy that the mask can achieve, but the mask fabrication process can also be more difficult and the fabrication costs can be higher.

[0077] In some embodiments, the arrangement period of the plurality of first control electrodes 121 in the first control circuit layer 120 may be equal to the arrangement period of the plurality of second control electrodes 131 in the second control circuit layer 130. In this way, each intersection area has substantially the same distribution in the horizontal and vertical directions, which helps simplify the mask preparation process.

[0078] In order to avoid the interference of the control circuit layer with the light transmission state of the mask, the first control electrode 121 and the second control electrode 131 may be formed using a material that is transparent to ultraviolet light and has a certain electrical conductivity. For example, in some embodiments, the first control electrode 121 may include at least one of indium tin oxide (ITO), aluminum doped zinc oxide, conductive diamond, or conductive aluminum nitride (AlN). Similarly, the second control electrode 131 may include at least one of indium tin oxide (ITO), aluminum doped zinc oxide, conductive diamond, or conductive aluminum nitride (AlN). In some embodiments, the thickness of the first control circuit layer 120 may be 10 nm to 100 nm. Similarly, the thickness of the second control circuit layer 130 may be 10 nm to 100 nm. In addition, the electrical resistance of the first control electrode 121 is generally smaller than that of the electrolytic reaction layer 110, and the electrical resistance of the second control electrode 131 is also generally smaller than that of the electrolytic reaction layer 110. This allows the desired electric field to be distributed substantially uniformly in the area corresponding to the control electrode, thus avoiding the interference of the electric field between adjacent intersection areas or pixel areas. In addition, the total thickness of the electrolytic reaction layer 110, the first control circuit layer 120, and the second control circuit layer 130 can be less than 100 μm, thereby avoiding the mask switching between the light-transmitting state and the light-non-transmitting state being too slow due to excessive thickness.

[0079] Furthermore, in some embodiments of the present disclosure as shown in FIG. 1, the mask may further include a substrate 140. In this case, the first control circuit layer 120, the electrolytic reaction layer 110, and the second control circuit layer 130 may be successively deposited on the substrate 140. In other words, the substrate 140 may function as a support for the various layers thereon. The substrate 140 may be made of quartz glass, calcium fluoride glass, or the like that is transparent to ultraviolet light.

[0080] In the mask of the present disclosure, a transparent control electrode array is used to control the bonding state between the ions in the electrolytic reaction layer between the control electrode array and the electrochromic material, thereby realizing the reversible adjustment of the light transmission state of each pixel area of ​​the mask. In this way, the corresponding mask pattern can be directly written and directly formed based on the data file of the desired device or chip structure, and the mask pattern on the same mask can also be erased for mask reuse. This improves the mask usage efficiency, reduces the device or chip fabrication cost, and avoids a series of problems caused by the high mask cost in traditional lithography. In the exemplary embodiment of the present disclosure, the period of the control electrode array in the control circuit layer is 100 nm or less, which can meet the requirement of 28 nm process node when combined with 4 times reduction projection exposure. Furthermore, it can also meet the requirement of 14 nm or more advanced process node when combined with technology such as LELE (Lithography Etch Lithography Etch) process. Therefore, reliable and low-cost small batch production of highly integrated chips can be achieved.

[0081] In an exemplary embodiment of the present disclosure, a lithography apparatus is also provided. As shown in FIG. 7, the lithography apparatus may include the above-mentioned mask 100 and a control module 200. The control module 200 may be configured to generate a plurality of first control signals applied to a plurality of first control electrodes 121 and a plurality of second control signals applied to a plurality of second control electrodes 131 according to a layout, so that the light transmission states of pixel regions in the mask 100 respectively correspond to respective layers in the layout. Specifically, the control module 200 may include a digital control unit 210 for generating a plurality of mask patterns corresponding to one or more layers in the layout of the device or chip, and for generating respective first control signals and respective second control signals corresponding to the respective mask patterns, and a mask driving unit 220 for respectively changing the light transmission states of each pixel region of the mask according to each set of the first control signals and the second control signals.

[0082] In the lithography apparatus of the present disclosure, when a mask with a line width accuracy of 100 nm is employed together with a technique such as 4x reduction projection and LELE, each exposure area is approximately 0.25×0.25 mm by utilizing a pixel area of ​​10000×10000. 2 Under these conditions, the lithography machine can achieve a 1 cm resolution with 1600 times control and synchronization of dynamic adjustments and exposures of the mask combined with 1-2 nm grade workpiece stage positioning. 2 Exposure of a grade chip can be completed within about 10 minutes. With a linewidth accuracy of 32 nm, this exposure speed is more than 100 times faster than that of the most advanced electron beam exposure machines. In conclusion, the fabrication of complex devices or chips can be efficiently and accurately completed through a single or a few reusable and rewritable masks, which reduces the fabrication cost of the devices or chips and facilitates rapid update, mass production, and better market penetration of the devices or chips.

[0083] In an exemplary embodiment of the present disclosure, a method for manufacturing a mask is also provided, which may include, as shown in FIG. a step S810 of providing a substrate; Step S820: forming a first control circuit layer having a pattern on the substrate, the first control circuit layer comprising a plurality of first control electrodes; Step S830 of forming an electrolytic reaction layer containing an electrochromic material on the first control circuit layer; and Form a patterned second control circuit layer on the electrolysis reaction layer, step S840, where the second control circuit layer comprises a plurality of second control electrodes, step S840. In this case, the light transmission state of the pixel region of the mask is configured to be determined by a control voltage between at least a portion of a first control electrode and at least a portion of a second control electrode contained within the pixel region, and the control voltage controls the light transmission state of the pixel region by controlling the ionic bonding state of the electrochromic material in the electrolytic reaction layer.

[0084] In the process of forming the patterned first and second control circuit layers, the patterned first and second control circuit layers may be formed by laser direct writing or electron beam direct writing, or may be formed by other mask-based lithography. When parameters such as the ratio of the area occupied by the control electrodes to the area not occupied by the control electrodes, the period of the control electrode array, and similar parameters in the first and second control circuit layers are equal, the first and second control circuit layers can be formed in different directions (e.g., perpendicular to each other) using the same mask, reducing the fabrication cost.

[0085] Moreover, in some embodiments, forming the electrolytic reaction layer on the first control circuitry layer includes: sequentially laminating a first electrolyte material layer, an electrolyte layer, and a second electrolyte material layer together to form the electrolysis reaction layer; forming an electrolysis reaction layer on the first control circuitry layer, with the first electrolyte material layer disposed between the first control circuitry layer and the electrolyte layer.

[0086] When the first electrolyte material layer, the electrolyte layer, and the second electrolyte material layer are in the form of a continuous film, the formation of the electrolysis reaction layer is thus very simple and low-cost. However, if the same patterning is present in the first electrolyte material layer, the electrolyte layer, or the second electrolyte material layer, the layer having the corresponding pattern may be formed by direct laser writing, direct electron beam writing, or based on other masks. If the first electrolyte material layer, the electrolyte layer, and the second electrolyte material layer have the same patterning aspect, a composite of the first electrolyte material layer, the electrolyte layer, and the second electrolyte material layer may first be formed by lamination, and then the composite may be patterned.

[0087] Alternatively, in some other embodiments, forming the electrolytic reaction layer on the first control circuitry layer comprises: forming a first electrolyte material layer over the first control circuitry layer; forming an electrolyte layer on the first electrolyte material layer; forming a second layer of electrolyte material over the electrolyte layer.

[0088] When the electrolytic reaction layers are so formed, corresponding material in the form of a continuous film or having a pattern can conveniently be laminated to each layer as required.

[0089] Although exemplary embodiments of the present disclosure have been described, those skilled in the art will understand that numerous variations and modifications may be made to various embodiments of the present disclosure without essentially departing from the spirit and scope of the present disclosure. Therefore, all such variations and modifications are included in the scope of protection of the present disclosure as defined in the claims. The present disclosure is defined by the appended claims, and the equivalents of these claims are also included therein.

Claims

1. A mask, the mask comprising: an electrolytic reaction layer including an electrochromic material; a first control circuit layer, the first control circuit layer being disposed on a first side of the electrolytic reaction layer, the first control circuit layer including a plurality of first control electrodes; a second control circuit layer disposed on a second side of the electrolytic reaction layer opposite the first side, the second control circuit layer comprising a plurality of second control electrodes; A mask, wherein the light transmission state of a pixel region of the mask is determined by a control voltage between at least a portion of the first control electrode and at least a portion of the second control electrode contained within the pixel region, and the control voltage controls the light transmission state of the pixel region by controlling the ionic bonding state of the electrochromic material in the electrolytic reaction layer.

2. The mask comprises: The mask of claim 1 , further comprising a substrate, the first control circuitry layer, the electrolytic reaction layer, and the second control circuitry layer being sequentially layered on the substrate.

3. The mask of claim 2 , wherein the substrate comprises at least one of quartz or calcium fluoride.

4. The electrolytic reaction layer is An electrolyte layer; a first electrolyte material layer disposed between the first control circuit layer and the electrolyte layer; 10. The mask of claim 1, further comprising: a second electrolyte material layer disposed between the electrolyte layer and the second control circuitry layer.

5. 5. The mask of claim 4, wherein at least one of lithium ions or hydrogen ions are soluble in the electrolyte layer.

6. the electrolyte layer comprises a solid electrolyte; or The mask of claim 4 , wherein the electrolyte layer comprises a liquid electrolyte.

7. The mask of claim 4 , wherein one of the first electrolyte material layer and the second electrolyte material layer includes the electrochromic material.

8. 8. The mask of claim 7, wherein one of the first electrolyte material layer and the second electrolyte material layer comprises a magnesium nickel alloy, a magnesium yttrium alloy, niobium oxide, or niobium oxide modified with indium tin oxide nanoparticles.

9. The mask of claim 7 , wherein the other of the first and second electrolyte material layers comprises an oxide of a transition metal.

10. 10. The mask of claim 9, wherein the other of the first and second electrolyte material layers comprises tungsten oxide.

11. the electrolyte layer comprises an electrolyte material in the form of a continuous film; the first electrolyte material layer comprises a first electrolyte material in the form of a continuous film; and / or The mask of claim 4 , wherein the second electrolyte material layer comprises a second electrolyte material in the form of a continuous film.

12. the electrolyte layer includes a plurality of electrolyte material blocks arranged in an array, and each pixel area of ​​the mask includes one or more electrolyte material blocks; the first electrolyte material layer includes a plurality of first electrolyte material blocks arranged in an array, and each pixel area of ​​the mask includes one or more first electrolyte material blocks; and / or 5. The mask of claim 4, wherein the second electrolyte material layer includes a plurality of second electrolyte material blocks arranged in an array, and pixel areas of the mask each include one or more of the first electrolyte material blocks.

13. each of the plurality of first control electrodes is connected to a first pole of a controlled power source via a respective first switching device; and 2. The mask of claim 1, wherein each of the plurality of second control electrodes is respectively connected to a second pole of the controlled power source via a respective second switching device.

14. 2. The mask of claim 1, wherein each of the first control electrodes is configured to receive a first control signal, and each of the second control electrodes is configured to receive a second control signal, to control the light transmission state of the pixel area containing at least a portion of the first control electrode and at least a portion of the second control electrode that are overlapping.

15. the first control electrode is a first strip-shaped electrode extending in a first direction, and the plurality of first control electrodes are disposed in the first control circuit layer and electrically insulated from one another; and 2. The mask of claim 1, wherein the second control electrode is a second strip electrode extending in a second direction perpendicular to the first direction, and the plurality of second control electrodes are arranged in the second control circuit layer and electrically insulated from one another.

16. 16. The mask of claim 15, wherein pixel regions of the mask each comprise at least a portion of one first control electrode and at least a portion of one second control electrode.

17. 16. The mask of claim 15, wherein pixel regions of the mask each comprise at least a portion of a first plurality of control electrodes and at least a portion of a second plurality of control electrodes.

18. The ratio of the area of ​​the first control circuit layer occupied by the first control electrodes to the area of ​​the first control circuit layer not occupied by the first control electrodes is between 100% and 1000%; and / or 16. The mask of claim 15, wherein a ratio of an area of ​​the region occupied by the second control electrodes in the second control circuit layer to an area of ​​the region not occupied by the second control electrodes is between 100% and 1000%.

19. 16. The mask of claim 15, wherein a ratio of an area of ​​the first control circuit layer occupied by the first control electrode to an area of ​​the first control circuit layer not occupied by the first control electrode is equal to a ratio of an area of ​​the second control circuit layer occupied by the second control electrode to an area of ​​the second control circuit layer not occupied by the second control electrode.

20. the first control electrodes in the first control circuit layer are periodically arranged; and / or The mask of claim 15 , wherein the plurality of second control electrodes in the second control circuitry layer are arranged periodically.

21. The arrangement period of the plurality of first control electrodes in the first control circuit layer is 50 nm to 50 μm, and / or 21. The mask of claim 20, wherein the arrangement period of the plurality of second control electrodes in the second control circuit layer is 50 nm to 50 μm.

22. 21. The mask of claim 20, wherein a spacing period of the plurality of first control electrodes in the first control circuitry layer is equal to a spacing period of the plurality of second control electrodes in the second control circuitry layer.

23. the first control electrode comprises at least one of indium tin oxide, aluminum doped zinc oxide, conductive diamond, or conductive aluminum nitride; and / or 10. The mask of claim 1, wherein the second control electrode comprises at least one of indium tin oxide, aluminum doped zinc oxide, conductive diamond, or conductive aluminum nitride.

24. the thickness of the first control circuit layer is between 10 nm and 100 nm; and / or The mask of claim 1 , wherein the second control circuit layer has a thickness of 10 nm to 100 nm.

25. The electrical resistance of the first control electrode is smaller than that of the electrolytic reaction layer; and The mask of claim 1 , wherein the electrical resistance of the second control electrode is less than that of the electrolytic reaction layer.

26. The mask of claim 1 , wherein the total thickness of the electrolytic reaction layer, the first control circuitry layer, and the second control circuitry layer is less than 100 μm.

27. 1. A lithographic apparatus comprising: A mask according to any one of claims 1 to 26; a control module configured to generate a plurality of first control signals to be applied to the plurality of first control electrodes and a plurality of second control signals to be applied to the plurality of second control electrodes, respectively, according to a layout, wherein light transmission states of pixel regions of the mask correspond to the layout.

28. 1. A method of manufacturing a mask, the method comprising: Providing a substrate; forming a first control circuit layer on the substrate having a pattern, the first control circuit layer comprising a plurality of control electrodes; forming an electrolytic reaction layer on the first control circuit layer, the electrolytic reaction layer including an electrochromic material; forming a patterned second control circuit layer on the electrolytic reaction layer, the second control circuit layer comprising a plurality of second control electrodes; A method of manufacturing a mask, the method comprising: configuring a light transmission state of a pixel region of the mask to be determined by a control voltage between at least a portion of the first control electrode and at least a portion of the second control electrode contained within the pixel region, the control voltage controlling the light transmission state of the pixel region by controlling an ionic bonding state of the electrochromic material in the electrolytic reaction layer.

29. forming the electrolytic reaction layer on the first control circuit layer; sequentially laminating a first electrolyte material layer, an electrolyte layer, and a second electrolyte material layer together to form the electrolysis reaction layer; 30. The method of claim 28, further comprising forming the electrolysis reaction layer on the first control circuitry layer, the first electrolyte material layer being disposed between the first control circuitry layer and the electrolyte layer.

30. forming the electrolytic reaction layer on the first control circuit layer; forming a first layer of electrolyte material over the first control circuitry layer; forming an electrolyte layer on the first layer of electrolyte material; and forming a second layer of electrolyte material over the electrolyte layer.

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