Crystal growth apparatus

Abstract

An embodiment of the present specification provides a crystal growth apparatus, which includes a crucible including a source chamber for placing a source material and a growth chamber in which a crystal is grown, and a heat retaining device provided on at least one side of the outside of the crucible.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to Chinese patent application having application number 202210511620.6 filed on May 12, 2022, and Chinese patent application having application number 202210584487.7 filed on May 27, 2022, the entire contents of which are incorporated herein by reference.

[0002] This application relates to the technical field of crystal growth, and in particular to crystal growth apparatus. [Background technology]

[0003] When growing crystals (e.g. semiconductor crystals) by physical vapor transport (PVT), the crucible needs to be heated and a heat-insulating layer needs to be installed on the outside of the crucible. A seed crystal is placed inside the top cover of the crucible, and a crystal can grow on the seed crystal. Summary of the Invention [Means for solving the problem]

[0004] A crystal growth apparatus according to one or more embodiments of the present specification includes a crucible including a raw material chamber for placing raw material and a growth chamber in which the crystal grows, and a heat retention device provided on at least one side outside the crucible.

[0005] In some embodiments, the crucible includes a top lid, the top lid including a lid body and a seed support, the seed support being removably connected to the lid body.

[0006] In some embodiments, the seed crystal support includes a connection structure disposed at a central region of the seed crystal support on a side adjacent to the lid body.

[0007] In some embodiments, the seed crystal support has a thickness of between 2 mm and 10 mm.

[0008] In some embodiments, the two contacting surfaces of the seed crystal support and the lid body include interlocking concave-convex structures.

[0009] In some embodiments, the seed crystal support includes separation grooves that separate the seed crystals on the seed crystal support.

[0010] In some embodiments, the separation groove is a circumferential groove provided on the outer periphery on the side facing away from the lid body.

[0011] In some embodiments, the ratio of the radial depth of the circumferential groove to the radius of the seed crystal support portion is in the range of 0.028 to 0.042.

[0012] In some embodiments, the radial depth of the circumferential groove is between 2 mm and 4 mm, and the axial height of the circumferential groove is between 0.5 mm and 1.5 mm.

[0013] In some embodiments, the crucible includes a flow directing device disposed between the source chamber and the growth chamber, the flow directing device including a first flow directing surface that slopes toward a bottom surface of the source chamber.

[0014] In some embodiments, the flow guide device includes a flow guide groove, which is a recessed groove provided on the outer periphery of the flow guide device.

[0015] In some embodiments, the flow directing groove includes a second flow directing surface parallel or substantially parallel to the first flow directing surface, and a flow directing wall is formed between the first flow directing surface and the second flow directing surface.

[0016] In some embodiments, the flow directing device further includes a support wall that radially connects the flow directing wall and an outer peripheral wall of the crucible.

[0017] In some embodiments, the thickness of the flow guide wall is between 10 mm and 60 mm.

[0018] In some embodiments, the height of the flow guide groove is in the range of 20 mm to 40 mm.

[0019] In some embodiments, the ratio of the thickness of the flow guide wall to the height of the flow guide groove is in the range of 0.2 to 1.5.

[0020] In some embodiments, the thickness of the support wall ranges from 10 mm to 60 mm.

[0021] In some embodiments, the ratio of the thickness of the flow guide wall to the thickness of the support wall is in the range of 0.8 to 1.2.

[0022] In some embodiments, the crystal growing apparatus further includes a furnace chamber and a temperature measurement structure, the crucible is disposed within the furnace chamber, the temperature measurement structure includes a temperature measurement chamber and a temperature measurement window, the temperature measurement chamber includes a first chamber portion, a body portion and a second chamber portion, the temperature measurement window is disposed in the first chamber portion, and the second chamber portion is in communication with the furnace chamber.

[0023] In some embodiments, the diameter of the body portion is less than the diameter of the furnace chamber.

[0024] In some embodiments, a diameter of the first chamber portion and / or the second chamber portion is smaller than a diameter of the body portion.

[0025] In some embodiments, the temperature measurement structure further includes an inlet port in communication with the first chamber portion and an outlet port in communication with the second chamber portion.

[0026] In some embodiments, the diameter of the exhaust port is smaller than the diameter of the intake port.

[0027] In some embodiments, the temperature measurement structure further comprises a cooler disposed in the second chamber portion.

[0028] In some embodiments, the temperature measurement structure further comprises a deposition chamber in communication with the furnace chamber.

[0029] In some embodiments, the temperature within the deposition chamber is lower than the temperature within the furnace chamber.

[0030] In some embodiments, the temperature measurement structure further comprises a deposition chamber in communication with the second chamber portion.

[0031] In some embodiments, the temperature within the deposition chamber is lower than the temperature within the furnace chamber and the temperature measurement chamber, and the pressure within the deposition chamber is lower than the pressure within the temperature measurement chamber.

[0032] In some embodiments, the thermal insulation device includes a first thermal insulation assembly including an inner layer having a thickness that meets a predetermined condition, an outer layer having a material different from that of the inner layer, and an intermediate layer positioned between the inner layer and the outer layer.

[0033] In some embodiments, the first thermal insulation assembly is disposed at least on a periphery of the crucible.

[0034] In some embodiments, the thickness of the inner layer ranges from 4 mm to 57 mm.

[0035] In some embodiments, the thickness of the intermediate layer ranges from 28 mm to 143 mm.

[0036] In some embodiments, the thickness of the intermediate layer is greater than the thickness of the inner layer and the thickness of the outer layer.

[0037] In some embodiments, the ratio of the thickness of the inner layer to the thickness of the intermediate layer is between 1:2 and 1:10.

[0038] In some embodiments, the ratio of the thickness of the intermediate layer to the thickness of the outer layer is from 2:0.5 to 10:3.

[0039] In some embodiments, the ratio of the thickness of the inner layer to the thickness of the outer layer is from 1:0.5 to 1:3.

[0040] In some embodiments, the inner layer includes at least two thermal sections stacked one above the other.

[0041] In some embodiments, the inner layer has a different thickness along the axial direction.

[0042] In some embodiments, the inner layer material comprises graphite felt.

[0043] In some embodiments, the outer layer material includes at least one of zirconia, alumina, a carbon material, or a carbon fiber material.

[0044] In some embodiments, graphite paper is filled between the middle layer and the outer layer.

[0045] In some embodiments, the incubation apparatus further comprises a second incubation assembly disposed on top of the crystal growing apparatus.

[0046] In some embodiments, the second thermal layer comprises a laminated structure of the same material.

[0047] In some embodiments, the insulation device further comprises a third insulation assembly comprising an annular or circular structure.

[0048] In some embodiments, the annular structure has an inner diameter in the range of 10 mm to 90 mm.

[0049] In some embodiments, the ratio of the outer diameter of the annular structure to the radius of the crucible is between 0.6 and 1.2.

[0050] In some embodiments, the ratio of the inner diameter to the outer diameter of the annular structure is in the range of 0.1 to 0.8.

[0051] In some embodiments, the ratio of the inner diameter of the annular structure to the radius of the crucible is in the range of 0.1 to 0.9.

[0052] The present application will be further illustrated by example embodiments, which are illustrated in detail in the accompanying drawings, which are not limiting, and in which like numbers represent like structures. [Brief description of the drawings]

[0053] [Figure 1] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present disclosure. [Diagram 2] FIG. 2 is a schematic diagram of a top cover according to some embodiments of the present disclosure. [Diagram 3] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present disclosure. [Figure 4] 3 is a local enlarged schematic view of a seed crystal support portion shown in FIG. 2. [Diagram 5] FIG. 2 is a schematic diagram of a top cover according to some embodiments of the present disclosure. [Figure 6] FIG. 2 is a schematic diagram of a seed crystal support according to some embodiments of the present disclosure. [Figure 7] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present disclosure. [Figure 8] 1 is a schematic diagram of a flow guider according to some embodiments of the present disclosure; [Figure 9A] 1 is a schematic cross-sectional view of a crystal growing apparatus according to some embodiments of the present disclosure. [Figure 9B] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present disclosure. [Figure 10] FIG. 1 is a schematic diagram of a temperature measurement structure in accordance with some embodiments of the present disclosure. [Figure 11] FIG. 1 is a schematic diagram of a temperature measurement structure in accordance with some embodiments of the present disclosure. [Figure 12] FIG. 1 is a schematic diagram of a temperature measurement structure in accordance with some embodiments of the present disclosure. [Figure 13] FIG. 1 is a schematic diagram of a temperature measurement structure in accordance with some embodiments of the present disclosure. [Figure 14]FIG. 1 is a schematic diagram of a temperature measurement structure in accordance with some embodiments of the present disclosure. [Figure 15] FIG. 1 is a schematic diagram of a temperature measurement structure in accordance with some embodiments of the present disclosure. [Figure 16] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present disclosure. [Figure 17A] FIG. 2 is a schematic diagram of an inner layer of a first thermal insulation assembly according to some embodiments of the present disclosure. [Figure 17B] FIG. 2 is a schematic diagram of an insulation section according to some embodiments of the present disclosure. [Figure 17C] FIG. 2 is a schematic diagram of an inner layer of a first thermal insulation assembly according to some embodiments of the present disclosure. [Figure 17D] FIG. 2 is a schematic diagram of an inner layer of a first thermal insulation assembly according to some embodiments of the present disclosure. [Figure 18] FIG. 2 is a schematic diagram of a first thermal insulation assembly according to some embodiments of the present disclosure. [Figure 19] FIG. 2 is a schematic diagram of a first thermal insulation assembly according to some embodiments of the present disclosure. [Figure 20] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present disclosure. [Figure 21] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0054] In order to more clearly describe the technical solutions of the embodiments of the present application, the following briefly describes the drawings that need to be used in the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application, and those skilled in the art can apply the present application to other similar situations through these drawings without creative work. As long as it is clear or otherwise described in the language environment, the same numbers in the drawings represent the same structures or operations.

[0055] FIG. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present specification. Hereinafter, the crystal growth apparatus will be described in detail with reference to FIG. 1. In some embodiments, the crystal growth apparatus 10 can produce a crystal (e.g., a semiconductor crystal, such as a silicon carbide crystal, an aluminum nitride crystal, a zinc oxide crystal, a zinc antimony crystal, etc.) based on a physical vapor deposition method. In some embodiments, as shown in FIG. 1, the crystal growth apparatus 10 may include a crucible 100, a heating assembly (not shown in FIG. 1), and a heat retention device 200. The heat retention device 200 is provided on at least one side of the crucible 100.

[0056] The crucible 100 is used as a container for containing materials necessary for crystal growth, and is used for crystal growth in a high-temperature environment. In some embodiments, the crucible 100 may include a source chamber 102 in which a source material is placed and a growth chamber 101 in which the crystal is grown. In some embodiments, the source chamber 102 is located below the growth chamber 101 and communicates with the growth chamber 101 in a gas phase.

[0057] In some embodiments, the source chamber 102 may contain a source material such as silicon carbide, aluminum nitride, zinc oxide, or zinc antimony, which may be sublimated into gas phase components under the action of high temperature (e.g., for example, in producing silicon carbide crystals, the gas phase components may include Si2C, SiC2, and Si).

[0058] In some embodiments, a seed crystal 303 may be provided in the growth chamber 101, and the gas phase components crystallize to produce crystals after contacting the seed crystal in the growth chamber 101. In some embodiments, the seed crystal 303 may be fixedly attached to an inner surface (e.g., a central position of the inner surface) of a top (e.g., a top lid) of the crucible 100.

[0059] A heating assembly may be provided outside (e.g., around) the crucible 100 to heat the crucible 100. In the crystal growth process, an axial temperature gradient may be formed between the raw material and the seed crystal 303 by controlling the heating parameters of the heating assembly. The raw material may be decomposed and sublimated into gaseous components when exposed to heat (for example, in the case of producing silicon carbide crystals, the gaseous components may include Si2C, SiC2, and Si), and the gaseous components are transported from the surface of the raw material to the surface of the seed crystal 303 under the driving action of the axial temperature gradient, and since the temperature of the seed crystal 303 is relatively low, the gaseous components crystallize on the surface of the seed crystal 303 to generate crystals. In some embodiments, the heating assembly may include an induction heating assembly, a resistance heating assembly, and the like.

[0060] The heat retention device 200 can maintain a stable temperature inside the crucible 100 by reducing heat exchange between the inside of the crucible 100 and the outside of the crucible 100. In some embodiments, the heat retention device 200 may have a single-layer structure or a multi-layer structure. In some embodiments, the heat retention device 200 may completely cover the sidewall and / or the bottom of the crucible 100. For more details on the heat retention device 200, please refer to other descriptions in this specification.

[0061] In some embodiments, for example, to produce silicon carbide crystals, silicon carbide raw material is placed in the source chamber 102. A seed crystal 303 is placed in the growth chamber 101 with the seed crystal 303 facing downward. The crucible 100 is heated by the heating assembly to sublimate the silicon carbide in the source chamber 102 to generate a gas phase component. The gas phase component rises into the growth chamber 101 and contacts the seed crystal 303, crystallizing on the surface of the seed crystal 303 to grow a crystal. A heat retention device 200 is provided outside the crucible 100 to keep the crucible 100 warm, thereby maintaining the temperature inside the crucible 100 within a temperature range required for crystal growth.

[0062] Hereinafter, each member of the crystal growth apparatus 10 and its detailed structure will be described.

[0063] FIG. 2 is a schematic diagram of a top cover according to some embodiments of the present specification. Hereinafter, the top cover will be described in detail with reference to FIG. 2. As shown in FIGS. 1 and 2, the crucible 100 includes a top cover 300. In some embodiments, the top of the crucible 100 is open, and the top cover 300 is provided at the opening of the crucible 100. The top cover 300 includes a cover body 301 and a seed crystal support 302. In some embodiments, the cover body 301 and the seed crystal support 302 are removably connected.

[0064] The top cover 300 can be connected to the opening of the crucible 100 to close the opening, thereby concentrating the gas phase components mainly in the growth chamber. In some embodiments, the top cover 300 conforms to the shape of the opening. In some embodiments, the top cover 300 can be a disk-shaped structure.

[0065] The lid body 301 may be a structure of the upper lid 300 that is mainly used to close the opening. The lid body 301 may have a seed crystal support 302 attached thereto as an attachment base, and the upper lid 300 is connected to the opening of the crucible 100 via the lid body 301.

[0066] The seed crystal support 302 may mount and secure the seed crystal 303. In some embodiments, the seed crystal 303 may be attached to the underside of the seed crystal support 302 in an adhesive manner. The seed crystal support 302 is attached to the underside of the top cover 300. After the top cover 300 is attached in place, the seed crystal 303 is located within the growth chamber 101.

[0067] In some embodiments, the seed crystal support 302 is removably connected to the lid body 301. During crystal growth, the seed crystal support 302 is attached to the lid body 301. After the crystal growth is completed, the seed crystal support 302 may be removed from the lid body 301. If the crystal needs to be removed, the seed crystal support 302 may be destroyed or a special process may be performed on the seed crystal support 302, and the lid body 301 may continue to be used, which is advantageous for reducing production costs.

[0068] FIG. 3 is a schematic diagram of a crystal growth apparatus according to some embodiments of the present specification. Hereinafter, the lid body will be described in detail with reference to FIG. 3. As shown in FIG. 2 and FIG. 3, in some embodiments, a first step surface 304 is provided on the lid body 301, and a second step surface is provided at the opening of the crucible 100. The first step surface 304 and the second step surface may be fitted together and attached. In some embodiments, the first step surface 304 is disposed on the periphery of the lid body 301.

[0069] In some embodiments, there may be a gap between the first step surface 304 and the second step surface. The gap can be used to provide ventilation between the inside and outside of the crucible 100 to prevent the pressure inside the crucible 100 from becoming too high.

[0070] In some embodiments, the first step surface 304 may be provided with a minute protrusion structure, and when the first step surface 304 and the second step surface are fitted together for attachment, the protrusion structure can be used to adjust the size of the gap formed between the first step surface 304 and the second step surface.

[0071] 2, the seed crystal support 302 includes a connecting structure 305. The connecting structure 305 and the seed crystal 303 are provided on opposite sides of the seed crystal support 302, respectively.

[0072] In some embodiments, the seed crystal support 302 may be removably connected to the lid body 301 via a connection structure 305. In some embodiments, the connection structure 305 may include one of a locking structure and a screw connection structure. In some embodiments, the connection structure 305 may include a screw having an external thread, and the lid body 301 is provided with an internally threaded hole connected to the external thread. In some embodiments, the connection structure 305 may include a threaded hole having an internal thread, and the lid body 301 is provided with a screw connected to the threaded hole. In some embodiments, the connection structure 305 may be a slider, and the lid body 301 is provided with a groove connected to the slider. In some embodiments, the slider may be a T-shaped slider, and the groove may be a T-shaped groove.

[0073] In some embodiments, the connection structure 305 is provided in a central region of the seed crystal support 302 on a side close to the lid body 301. In some embodiments, the geometric center of the seed crystal support 302 overlaps with the center of gravity, and the central region may be a region in which the geometric center of the seed crystal support 302 is located. For example, the central region may be a circular region whose center is the geometric center of the seed crystal support 302 and whose radius is within a predetermined range.

[0074] By providing a removable seed crystal support part 302, the seed crystal support part 302 and the lid body 301 can be separated after crystal growth is completed, and the crystal collection operation can be completed in the seed crystal support part 302 without destroying the lid body 301, and the lid body 301 can be reused repeatedly.

[0075] Fig. 4 is a locally enlarged schematic view of the seed crystal support part shown in Fig. 2. Hereinafter, the seed crystal support part will be described in detail with reference to Fig. 4.

[0076] In some embodiments, after the crystal growth is completed, in the process of harvesting the crystal, the seed crystal support 302 can be polished, and the material of the seed crystal support 302 can be consumed before the crystal is taken out. By harvesting the crystal in this manner, the mechanical stress caused by the crystal harvesting process can be effectively reduced and damage to the crystal can be avoided. In some embodiments, the thickness of the seed crystal support 302 can affect the efficiency and reliability of the crystal harvesting operation, and the smaller the thickness of the seed crystal support 302, the higher the efficiency of the crystal harvesting. However, the thickness of the seed crystal support 302 should not be too small so as not to affect the structural strength of the seed crystal support 302.

[0077] In some embodiments, the thickness a of the seed crystal support may be 2 mm to 10 mm. In some embodiments, the thickness a of the seed crystal support may be 3 mm to 9 mm. In some embodiments, the thickness a of the seed crystal support may be 4 mm to 8 mm.

[0078] FIG. 5 is a schematic diagram of a top cover according to some embodiments of the present specification. The top cover will be described in detail below with reference to FIG. 5. As shown in FIG. 5, the two surfaces where the seed crystal support part 302 and the cover body 301 come into contact include a mating uneven structure. When the seed crystal support part 302 and the cover body 301 are connected, the mating uneven structure can increase the contact area and connection strength between the seed crystal support part 302 and the cover body 301, and is also advantageous in transferring heat from the seed crystal support part 302 to the cover body 301.

[0079] In some embodiments, the concave-convex structure may include a protrusion structure 306 provided on the seed crystal support portion 302 and a groove structure 307 provided on the lid body 301, and the protrusion structure 306 and the groove structure 307 may be fitted together and attached.

[0080] In another embodiment, the protrusion structure 306 may be provided on the lid body 301 , and the recessed groove structure 307 may be provided on the seed crystal support 302 .

[0081] In some embodiments, the protrusion structure 306 and the groove structure 307 may be bonded together on three sides. In some embodiments, the protrusion structure 306 may be provided in a plurality of parallel configurations, and the groove structure 307 may be provided in one-to-one correspondence with the protrusion structure 306. In some embodiments, the cross section of the protrusion structure 306 (the cut surface of which is parallel to the axial direction of the crucible 100) may be one of a rectangle, a triangle, a semicircle, and a semi-ellipse, and the cross section of the groove structure 307 is provided in correspondence with the protrusion structure 306. In some embodiments, the specific structural shape of the connection structure 305 may be set according to the connection manner between the seed crystal support 302 and the lid body 301. In some embodiments, the seed crystal support 302 and the lid body 301 can be detachably connected by a fastening manner, the connection structure 305 can be a slider, the lid body 301 is provided with a groove connected to the slider, and the lid body 301 and the seed crystal support 302 can slide relative to each other through the fitting of the slider and the groove. In some embodiments, the seed crystal support 302 and the lid body 301 can be detachably connected by a fastening or screw connection manner, the protrusion structure 306 can be a circular protrusion, and the multiple protrusions are arranged coaxially, and the groove structure 307 can be a circular groove, and the groove structure 307 and the protrusion structure 306 are arranged in one-to-one correspondence.

[0082] In some embodiments, the seed crystal support 302 may include a separation groove 308. The separation groove 308 may be a structure that facilitates crystal harvesting. By providing the separation groove 308, the seed crystal 303 on the seed crystal support 302 may be more easily separated. In some embodiments, the separation groove 308 may be provided in different structural forms according to different crystal harvesting methods.

[0083] In some embodiments, the separation groove 308 may include a breakable structure that facilitates the destruction of the seed crystal support 302. By providing the seed crystal support 302 with a breakable structure in advance, the seed crystal support 302 can be destroyed when harvesting a crystal, and the material of the seed crystal support bonded to the seed crystal 303 can be reduced, making it easier to harvest the crystal by a method such as grinding. In some embodiments, the separation groove 308 is provided on the circumferential side surface of the seed crystal support 302, and the separation groove 308 is a recessed groove structure or a crack structure recessed inward from the circumferential side surface of the seed crystal support 302. By applying an acting force near the separation groove 308, the seed crystal support 302 becomes more likely to break from the separation groove 308, and the seed crystal support 302 becomes more likely to break, making it easier to remove the crystal from the seed crystal support 302.

[0084] In some embodiments, the separation grooves 308 (e.g., fragile structures) may be provided in a plurality of locations along the circumferential direction of the seed crystal support 302, and the plurality of separation grooves 308 may be distributed at equal or unequal distances. In some embodiments, the separation grooves 308 may be provided as annular fragile structures (also called fragile annular zones) surrounding the circumferential side of the seed crystal support 302.

[0085] In some embodiments, the cross-section of the separation groove 308 may be rectangular, triangular, or semicircular.

[0086] In some embodiments, the separation groove 308 may include an auxiliary separation structure to facilitate separation between the seed crystal 303 and the seed crystal support 302. In some embodiments, the auxiliary separation structure may be provided in a region adjacent to a connection surface between the seed crystal support 302 and the seed crystal 303, and the seed crystal 303 may be connected to the seed crystal support 302 by an adhesive method, so that when harvesting the crystal, an adhesive separation liquid can be infiltrated into the adhesive surface between the seed crystal support 302 and the seed crystal 303 by the auxiliary separation structure, and the separation between the seed crystal support 302 and the seed crystal 303 can be facilitated.

[0087] Fig. 6 is a schematic diagram of a seed crystal support according to some embodiments of the present specification. The separation groove will be described in detail below with reference to Fig. 6. As shown in Fig. 6, the separation groove 308 is a circumferential groove (i.e., an auxiliary separation structure) provided on the outer periphery of the seed crystal support 302 on the side away from the lid body 301.

[0088] In some embodiments, the circumferential groove is provided in an edge region of the bottom surface (i.e., the surface connected to the seed crystal) of the seed crystal support 302. In some embodiments, the circumferential groove may be a concave trapezoidal shape recessed toward the lid body 301. By providing the circumferential groove, the contact area between the seed crystal support 302 and the seed crystal 303 is reduced, and a space is secured to accommodate a separation liquid after the seed crystal 303 is bonded to the seed crystal support 302, so that the bonded separation liquid can be directly infiltrated into the connection surface between the seed crystal support 302 and the seed crystal 303, which facilitates the destruction of the bonded connection between the seed crystal support 302 and the seed crystal 303, and makes the seed crystal more easily separated.

[0089] In some embodiments, the depth M of the circumferential groove may affect the infiltration effect of the adhesive separation liquid on the connection surface between the seed crystal support 302 and the seed crystal 303. If the depth M is too small, the adhesive separation liquid is difficult to maintain in the circumferential groove for a long time and is easy to flow out of the circumferential groove, so that the infiltration effect of the adhesive separation liquid on the connection surface between the seed crystal support 302 and the seed crystal 303 is weakened. If the depth M is too large, the contact area between the seed crystal support 302 and the seed crystal 303 is excessively reduced, the connection strength between the seed crystal support 302 and the seed crystal 303 is reduced, and the connection stability between the seed crystal 303 and the seed crystal support 302 is reduced. If the contact area is too small, the heat transfer between the seed crystal support 302 and the seed crystal 303 is also affected, and the heat transfer efficiency from the edge of the seed crystal 303 to the seed crystal support 302 is reduced, and the temperature distribution of the seed crystal 303 becomes non-uniform, which may affect the growth of the seed crystal. In order to ensure the infiltration effect of the circumferential groove, the depth M should be set within a reasonable range. In some embodiments, the ratio of the radial depth M of the circumferential groove to the radius of the seed crystal support portion ranges from 0.02 to 0.05. In some embodiments, the ratio of the radial depth M of the circumferential groove to the radius of the seed crystal support portion ranges from 0.028 to 0.042. In some embodiments, the ratio of the radial depth M of the circumferential groove to the radius of the seed crystal support portion ranges from 0.03 to 0.04.

[0090] In order to further ensure the wetting effect of the circumferential groove, the height L of the circumferential groove along the axial direction should also be set within a reasonable range. In some embodiments, as shown in Fig. 6, the depth M of the circumferential groove along the radial direction is 2mm to 4mm, and the height L of the circumferential groove along the axial direction is 0.5mm to 1.5mm. In some embodiments, the depth M of the circumferential groove along the radial direction is 2.5mm to 3.5mm, and the height L of the circumferential groove along the axial direction is 0.8mm to 1.2mm.

[0091] FIG. 7 is a block diagram of an exemplary crystal growing apparatus according to some embodiments of the present disclosure.

[0092] In some embodiments, with reference to Figures 1 and 7, the crucible includes a flow directing device 103 disposed between the source chamber and the growth chamber.

[0093] The flow guide device 103 may be a device that controls and guides the direction of gas in and / or outside the crucible. In some embodiments, the flow guide device 103 may be provided between the source chamber and the growth chamber. In some embodiments, the flow guide device 103 may be provided in the source chamber. In some embodiments, the flow guide device 103 includes a flow guide passage 104 that communicates the source chamber 102 and the growth chamber 101. In some embodiments, the flow guide device 103 has an inlet facing the source chamber and a collection port facing the growth chamber 101, and the size (e.g., diameter) of the collection port is smaller than the size of the inlet, i.e., the size of one end of the flow guide passage 104 that is close to the source chamber 102 (i.e., the inlet) is larger than the size of one end (i.e., the collection port) that is close to the growth chamber 101. In some embodiments, the size (e.g., diameter) of the flow guide passage 104 that is close to the growth chamber 101 is smaller than the size of the source chamber 102. In some embodiments, the shape of the flow director 103 may be a hollow frustum. In some embodiments, the shape of the flow director 103 may be a variety of other shapes, including but not limited to a hollow frustum, and the like.

[0094] FIG. 8 is a block diagram of a flow directing device of an exemplary crystal growing apparatus according to some embodiments of the present disclosure.

[0095] In some embodiments, the flow directing device 103 includes a first flow directing surface 1031 that is inclined toward the bottom surface of the raw material chamber 102. The first flow directing surface 1031 is located on the outer wall of the raw material chamber 102 and is located below the growth chamber 101. For example, as shown in FIG. 8, the bottom of the first flow directing surface 1031 is connected to the inner wall of the raw material chamber 102, and the top of the first flow directing surface 1031 extends at an angle toward the growth chamber 101.

[0096] Since the edge region of the seed crystal is closer to the heating assembly and is usually slightly higher in temperature than the central region, by providing a flow guiding device 103 having a first flow guiding surface 1031, the gas phase components flowing from the source chamber 102 to the growth chamber 101 are concentrated in the center, increasing the temperature and concentration of the gas phase components in the central region of the growth chamber 101, reducing the difference between the central temperature and edge temperature of the seed crystal, and improving the quality of crystal growth.

[0097] In some embodiments, the inclination angle α of the first flow directing surface 1031 (i.e., the included angle between the first flow directing surface 1031 and the horizontal direction) can be set to change the flow direction of the high-temperature airflow flowing from the raw material chamber to the growth chamber, and the temperature distribution in the crystal growth region (e.g., the location of the seed crystal) in the growth chamber and the distribution state of the gas phase components in the growth chamber can be adjusted. A small inclination angle α is advantageous for the high-temperature airflow to gather at the center of the crystal growth region, reducing the temperature gradient between the center and the edge, and is advantageous for uniform growth of the crystal. However, the inclination angle α should not be made too small, and if the inclination angle α is made too small, the gas phase components may gather excessively toward the center, which is disadvantageous to uniform growth of the crystal. Therefore, in some embodiments, the inclination angle α of the first flow directing surface may be in the range of 20° to 80°. In some embodiments, the inclination angle α of the first flow directing surface may be in the range of 30° to 70°. In some embodiments, the inclination angle α of the first flow directing surface may be in the range of 40° to 60°.

[0098] In some embodiments, the radius of the collection port of the flow directing device 103 may be set to achieve the effect of reducing the temperature gradient between the center and the edge as described above. In some embodiments, the radius of the collection port of the flow directing device 103 may be 50 mm to 110 mm. In some embodiments, the radius of the collection port of the flow directing device 103 may be 55 mm to 100 mm. In some embodiments, the radius of the collection port of the flow directing device 103 may be 60 mm to 90 mm.

[0099] In some embodiments, the flow guiding device 103 includes a flow guiding groove 1032, which is a recessed groove provided on the outer periphery of the flow guiding device 103. Since the size (e.g., diameter) of one end of the flow guiding passage 104 adjacent to the growth chamber is smaller than the size of the raw material chamber, the thickness of the flow guiding device 103 along the radial direction at one end adjacent to the growth chamber becomes large, and the large thickness affects the heat conduction ability of the flow guiding device 103 to some extent. Therefore, by providing the flow guiding groove, the thickness of the flow guiding device 103 can be reduced, the thickness of the flow guiding device 103 can be made more uniform, and the heat conduction ability of the flow guiding device 103 can be improved.

[0100] The flow guiding groove 1032 is provided on the outer periphery of the flow guiding device 103, located on the outer wall of the crucible, and located below the growth chamber 101. For example, as shown in FIG. 8, the outer wall of the crucible located above the source chamber 102 is provided with a flow guiding groove 1032 recessed inward. In some embodiments, the shape of the flow guiding groove 1032 may be a conical annular groove. In some embodiments, the shape of the flow guiding groove 1032 may be various other shapes, including, but not limited to, an arc-shaped annular groove.

[0101] In some embodiments, the flow guide groove 1032 includes a second flow guide surface 1033 that is parallel or nearly parallel to the first flow guide surface 1031. "Nearly parallel" as used in the embodiments herein means that the smallest included angle between the two surfaces or two lines referenced to each other is 10° or less.

[0102] In some embodiments, the second flow-directing surface 1033 faces the outside of the crucible 100 and is located below the growth chamber 101. In some embodiments, the bottom of the second flow-directing surface 1033 is located on the outer wall of the crucible 100 and the top of the second flow-directing surface 1033 extends toward the growth chamber 101, as shown in FIG.

[0103] In some embodiments, a flow directing wall 1034 is configured between the first flow directing surface 1031 and the second flow directing surface 1033 .

[0104] The guide wall 1034 may be a crucible wall between the first guide surface 1031 and the second guide surface 1033 outside the raw material chamber 102. For example, as shown in FIG. 8, the inner surface of the guide wall 1034 is the first guide surface 1031, the outer surface of the guide wall 1034 is the second guide surface 1033, and the distance between the first guide surface 1031 and the second guide surface 1033 may be the thickness of the guide wall 1034. It should be noted that when the first guide surface 1031 and the second guide surface 1033 are not parallel, the thickness of the guide wall may be the average distance between the first guide surface 1031 and the second guide surface 1033, and the average distance may be calculated from the average value of the maximum distance and the minimum distance.

[0105] By setting the thickness of the guiding wall 1034, the thermal conductivity of the guiding device 103 can be changed to affect the temperature field distribution inside the crucible 100. In some embodiments, the thickness of the guiding wall 1034 may be set within a certain thickness range in consideration of the temperature field distribution inside the crucible 100 as a whole. In some embodiments, the thickness of the guiding wall 1034 is 10 mm to 60 mm. In some embodiments, the thickness of the guiding wall 1034 is 10 mm to 40 mm. In some embodiments, the thickness of the guiding wall 1034 is 10 mm to 30 mm.

[0106] In some embodiments, as shown in FIG. 8, the flow guide device 103 further includes a support wall 1035 that connects the flow guide wall 1034 and the outer circumferential wall of the growth chamber 101 along a radial direction. In some embodiments, the support wall 1035 may be provided along a horizontal direction. In some embodiments, there may be a certain included angle between the support wall 1035 and the horizontal direction. In some embodiments, the included angle between the support wall 1035 and the horizontal direction is 30° or less.

[0107] By setting the thickness of the support wall 1035, the ability of the flow guiding device 103 to conduct heat to the growth chamber 101 can be changed, thereby affecting the temperature field distribution inside the growth chamber 101. In some embodiments, the thickness of the support wall 1035 may be set within a certain thickness range in consideration of the temperature field distribution inside the growth chamber 101 as a whole, and the thickness of the support wall 1035 may be represented by the distance between the inner surface (the side facing the growth chamber 101) and the outer surface (the side facing the flow guiding groove 1032) of the support wall 1035.

[0108] In some embodiments, the thickness of the support wall 1035 ranges from 10 mm to 60 mm. In some embodiments, the thickness of the support wall 1035 ranges from 15 mm to 50 mm. In some embodiments, the thickness of the support wall 1035 ranges from 20 mm to 40 mm.

[0109] In some embodiments, when the thickness of the support wall 1035 is constant, the thickness and length of the flow guiding wall 1034 can be changed simultaneously by setting the height h of the flow guiding groove 1032, so as to change the heat conduction ability of the flow guiding device 103 and further affect the temperature field distribution inside the crucible 100. In some embodiments, the height h of the flow guiding groove 1032 ranges from 20 mm to 40 mm. In some embodiments, the height h of the flow guiding groove 1032 ranges from 22 mm to 38 mm. In some embodiments, the height h of the flow guiding groove 1032 ranges from 25 mm to 35 mm.

[0110] In some embodiments, the ratio of the thickness of the guiding wall 1034 to the height h of the guiding groove 1032 may characterize the inclination (e.g., inclination angle) of the first guiding surface 1031 and the second guiding surface 1033, and the inclination may further affect the flow state of the gas phase components in the guiding passage 104, thereby affecting the temperature field distribution in the growth chamber 101. In some embodiments, the ratio of the thickness of the guiding wall 1034 to the height h of the guiding groove 1032 may be set within a certain range in consideration of the temperature field distribution inside the growth chamber 101. In some embodiments, the ratio of the thickness of the guiding wall 1034 to the height h of the guiding groove 1032 may range from 0.2 to 1.5. In some embodiments, the ratio of the thickness of the guiding wall 1034 to the height h of the guiding groove 1032 may range from 0.5 to 1. In some embodiments, the ratio of the thickness of the guiding wall 1034 to the height h of the guiding groove 1032 may range from 0.2 to 0.8.

[0111] The thickness of the support wall 1035 mainly affects the ability of the flow concentrator 103 to conduct heat to the edge region of the growth chamber 101, and therefore mainly affects the edge temperature of the crystal growth, while the thickness of the flow concentrator wall 1034 mainly affects the ability of the flow concentrator 103 to conduct heat to the collection port region, and therefore mainly affects the temperature of the central region of the growth chamber 101. In some embodiments, the ratio of the thickness of the flow concentrator wall 1034 to the thickness of the support wall 1035 may be set within a certain range to reduce the difference between the central temperature and the edge temperature of the crystal growth.

[0112] In some embodiments, the ratio of the thickness of the guide wall 1034 to the thickness of the support wall 1035 is in the range of 0.8 to 1.2. In some embodiments, the ratio of the thickness of the guide wall 1034 to the thickness of the support wall 1035 is in the range of 0.6 to 1.5. In some embodiments, the ratio of the thickness of the guide wall 1034 to the thickness of the support wall 1035 is in the range of 0.9 to 1.

[0113] FIG. 9A is a schematic cross-sectional view of a crystal growth apparatus according to some embodiments of the present specification. FIG. 9B is a schematic configuration diagram of a crystal growth apparatus according to some embodiments of the present specification. Hereinafter, the crystal growth apparatus will be described in detail with reference to FIG. 9A and FIG. 9B. As shown in FIG. 9A and FIG. 9B, the crystal growth apparatus further includes a temperature measurement structure 500. In some embodiments, the temperature measurement structure 500 includes a temperature measurement chamber 501 and a temperature measurement window 502.

[0114] The temperature measurement structure 500 can determine whether the crystal growth is within a suitable temperature range by measuring the temperature inside the crystal growth apparatus, and can take measures in a timely manner if the measured temperature is not within the threshold range.

[0115] In some embodiments, the crystal growth apparatus further includes a furnace chamber 400, and the crucible 100 and the heat retention device 200 may be provided inside the furnace chamber 400. An opening 401 may be provided at the top of the furnace chamber 400, and the temperature measurement structure 500 may be provided in the opening 401 and communicate with the opening 401. In some embodiments, the inside of the furnace chamber 400 is in a high-temperature environment (e.g., 1200°C to 2000°C or 800°C to 1600°C) during operation, and using a conventional contact-type temperature measurement would affect the accuracy of the temperature measurement, so the temperature of the high-temperature furnace may be measured using a non-contact temperature measurement method. In some embodiments, temperature detection may be realized using an infrared temperature measurement method.

[0116] The temperature measurement window 502 may be a temperature detection window. For example, the temperature in the furnace chamber 400 or the crucible 100 may be collected by an infrared thermometer, where the temperature measurement structure 500 communicates with the opening 401, and the infrared thermometer can realize temperature measurement by collecting infrared rays emitted from the furnace chamber 400 by the temperature measurement window 502. In some embodiments, the material of the temperature measurement window 502 may include infrared temperature measurement glass (e.g., barium fluoride crystal glass).

[0117] 10 is a schematic diagram of a temperature measurement structure according to some embodiments of the present disclosure. Hereinafter, the temperature measurement structure will be described in detail with reference to FIG.

[0118] In some embodiments, as shown in FIG. 10, the temperature measurement chamber 501 includes a first chamber portion 5011, a main body portion 5012, and a second chamber portion 5013, the temperature measurement window 502 is provided in the first chamber portion 5011, and the second chamber portion 5013 is in communication with the furnace chamber 400, thus realizing temperature monitoring in the furnace chamber 400. In some embodiments, the growth chamber 101 may be in gas phase communication with the furnace chamber 400 through a gap near the cover body 300 of the crucible 100, and further in gas phase communication with the second chamber portion 5013. In some embodiments, the second chamber portion 5013 may be in direct communication with the growth chamber 101 through a temperature measurement hole formed in the cover body 300, thereby realizing temperature monitoring in the growth chamber.

[0119] The first chamber portion 5011 may refer to a top portion of the temperature measurement chamber 501. In some embodiments, the temperature measurement window 502 may be provided in the first chamber portion 5011. In some embodiments, the temperature measurement window 502 may be provided on a top surface of the first chamber portion 5011.

[0120] In some embodiments, the temperature measurement window 502 may be parallel or substantially parallel to the top surface of the first chamber portion 5011. In some embodiments, "substantially parallel" may refer to an included angle between the temperature measurement window 502 and the top surface of the first chamber portion 5011 being within a first predetermined range.

[0121] In some embodiments, the first predetermined range may be -10° to 10°. In some embodiments, the first predetermined range may be -8° to 8°. In some embodiments, the first predetermined range may be -6° to 6°. In some embodiments, the first predetermined range may be -5° to 5°. In some embodiments, the first predetermined range may be -2° to 2°. In some embodiments, the first predetermined range may be 0° to 1°. In some embodiments, the first predetermined range may be 1° to 2°.

[0122] In some embodiments, the temperature measurement window 502 may not be parallel to the upper end surface of the first chamber portion 5011, and the included angle between them is within the second predetermined range. In some embodiments, the second predetermined range may be 10° to 60°. In some embodiments, the second predetermined range may be 15° to 55°. In some embodiments, the second predetermined range may be 20° to 50°. In some embodiments, the second predetermined range may be 25° to 45°. In some embodiments, the second predetermined range may be 30° to 40°. In some embodiments, the second predetermined range may be 10° to 20°. In some embodiments, the second predetermined range may be 20° to 30°. In some embodiments, the second predetermined range may be 50° to 60°.

[0123] The body portion 5012 may refer to the portion between the first chamber portion 5011 and the second chamber portion 5013. The second chamber portion 5013 may refer to a bottom portion of the temperature measurement chamber 501. In some embodiments, the second chamber portion 5013 may be connected to the furnace chamber 400.

[0124] In some embodiments, the body portion 5012 may be a body of revolution type cavity structure, with the diameter of the body portion 5012 being smaller than the diameter of the furnace chamber 400 .

[0125] In some embodiments, the diameter of the body portion 5012 is much smaller than the diameter of the furnace chamber 400. In some embodiments, the ratio of the diameter of the body portion 5012 to the diameter of the furnace chamber 400 may be within a second predetermined ratio range. In some embodiments, the second predetermined ratio range may be 1:5 to 1:25. In some embodiments, the second predetermined ratio range may be 1:8 to 1:22. In some embodiments, the second predetermined ratio range may be 1:11 to 1:19. In some embodiments, the second predetermined ratio range may be 1:14 to 1:16. In some embodiments, the second predetermined ratio range may be 1:5 to 1:20. In some embodiments, the second predetermined ratio range may be 1:10 to 1:25. In some embodiments, the second predetermined ratio range may be 1:5 to 1:15. In some embodiments, the second predetermined ratio range may be 1:15 to 1:25.

[0126] By setting the diameter of the main body portion 5012 to be smaller than the diameter of the furnace chamber 400, the overall size of the temperature measurement chamber 501 can be made smaller than the size of the furnace chamber 400, thereby reducing the impact of the temperature measurement chamber 501 on the crystal growth environment within the furnace chamber 400.

[0127] In some embodiments, the body portion 5012 may be a gradually changing portion, i.e., the diameter of the body portion 5012 gradually decreases from one end connected to the first chamber portion 5011 to one end connected to the second chamber portion 5013. That is, the overall shape of the temperature measurement chamber 501 resembles a gradually decreasing shape from the top end to the bottom end.

[0128] In some embodiments, the diameter of the first chamber portion 5011 and the diameter of the second chamber portion 5013 may both be smaller than the diameter of the main body portion 5012. That is, the overall shape of the temperature measurement chamber 501 resembles a shape that is smaller at both ends and larger in the middle.

[0129] 11, the diameter of the second chamber portion 5013 may be smaller than the diameter of the main body portion 5012, and the diameter of the first chamber portion 5011 may be equal to or larger than the diameter of the main body portion 5012. That is, the overall shape of the temperature measurement chamber 501 resembles a shape that is larger at the top and smaller at the bottom.

[0130] By setting the temperature measurement chamber 501 in a shape that is small at both ends and large in the middle, or large at one end and small at the other end, or a shape that gradually becomes smaller from the upper end to the lower end, the gas concentration in the temperature measurement chamber 501 can be made greater than the gas concentration in the furnace chamber 400 (the gas pressure in the temperature measurement chamber 501 is greater than the gas pressure in the furnace chamber 400).Due to the existence of such a pressure difference, it becomes difficult for dust generated in the furnace chamber 400 to enter the temperature measurement chamber 501 and further reach the temperature measurement window 502, so that the cleanliness of the temperature measurement window 502 can be guaranteed, which is advantageous for improving the stability and accuracy of temperature measurement.

[0131] As shown in FIG. 10, in some embodiments, the temperature measurement structure may further include an inlet 5014 and an outlet 5015 .

[0132] The inlet 5014 may introduce gas into the temperature measurement chamber 501. In some embodiments, the inlet 5014 may be provided in the first chamber portion 5011. In some embodiments, the inlet 5014 may be provided in a side wall of the first chamber portion 5011. In some embodiments, the inlet 5014 may be provided in the furnace chamber 400 independent of the temperature measurement chamber 501. In some embodiments, taking crystal growth as an example, the gas introduced into the temperature measurement chamber 501 through the inlet 5014 may be a gas required for crystal growth, for example, oxygen gas and / or an inert gas. The inert gas may include nitrogen gas, helium gas, neon gas, xenon gas, radon gas, etc., or any combination thereof.

[0133] In some embodiments, the air inlet 5014 may be provided in the vicinity of the temperature measurement window 502. In some embodiments, "in the vicinity" may refer to the distance between the air inlet 5014 and the temperature measurement window 502 being within a predetermined distance range.

[0134] In some embodiments, the predetermined distance range may be between 1 cm and 10 cm. In some embodiments, the predetermined distance range may be between 3 cm and 8 cm. In some embodiments, the predetermined distance range may be between 5 cm and 6 cm. In some embodiments, the predetermined distance range may be between 1 cm and 3 cm. In some embodiments, the predetermined distance range may be between 3 cm and 5 cm. In some embodiments, the predetermined distance range may be between 5 cm and 8 cm. In some embodiments, the predetermined distance range may be between 8 cm and 10 cm.

[0135] In some embodiments, the distance between the air inlet 5014 and the temperature measurement window 502 may be determined based on the air inlet flow rate and / or the air inlet direction of the air inlet 5014. For example, the greater the air inlet flow rate of the air inlet 5014, the greater the distance between the air inlet 5014 and the temperature measurement window 502, and the smaller the air inlet flow rate, the smaller the distance between the air inlet 5014 and the temperature measurement window 502. Also, for example, the smaller the included angle between the air inlet 5014's air inlet direction and the normal to the inner surface of the temperature measurement window 502, the greater the distance between the air inlet 5014 and the temperature measurement window 502, and the greater the included angle between the air inlet 5014's air inlet direction and the normal to the inner surface of the temperature measurement window 502, the smaller the distance between the air inlet 5014 and the temperature measurement window 502. In some embodiments, the intake flow rate of the intake port 5014 may be set according to actual requirements, provided that it can meet the requirements of crystal growth and purge the inner surface of the temperature measurement window 502 with gas.

[0136] In some embodiments, the air intake direction of the air intake 5014 may be set to face (e.g., face at an angle) toward the temperature measurement window 502. In some embodiments, the included angle between the air intake direction of the air intake 5014 and the plane of the temperature measurement window 502 may be within a predetermined angle range.

[0137] In some embodiments, the predetermined angle range may be 5° to 60°. In some embodiments, the predetermined angle range may be 10° to 55°. In some embodiments, the predetermined angle range may be 15° to 50°. In some embodiments, the predetermined angle range may be 20° to 45°. In some embodiments, the predetermined angle range may be 25° to 40°. In some embodiments, the predetermined angle range may be 30° to 35°. In some embodiments, the predetermined angle range may be 5° to 20°. In some embodiments, the predetermined angle range may be 5° to 40°. In some embodiments, the predetermined angle range may be 25° to 60°.

[0138] In some embodiments, the included angle between the intake direction of the air inlet 5014 and the plane of the temperature measurement window 502 may be determined based on the size of the temperature measurement window 502 and / or the distance between the air inlet 5014 and the temperature measurement window 502. For example, the larger the size of the temperature measurement window 502, the larger the included angle between the intake direction of the air inlet 5014 and the plane of the temperature measurement window 502 may be, and the smaller the size of the temperature measurement window 502, the smaller the included angle between the intake direction of the air inlet 5014 and the plane of the temperature measurement window 502 may be. Also, for example, the smaller the distance between the air inlet 5014 and the temperature measurement window 502, the larger the included angle between the intake direction of the air inlet 5014 and the plane of the temperature measurement window 502 may be, and the larger the distance between the air inlet 5014 and the temperature measurement window 502, the smaller the included angle between the intake direction of the air inlet 5014 and the plane of the temperature measurement window 502 may be.

[0139] By providing the air intake 5014 near the temperature measurement window 502 and directing the air intake toward the temperature measurement window 502, the gas entering the temperature measurement chamber 501 from the air intake 5014 can purge at least a portion of the dust on the inner surface of the temperature measurement window 502, thereby achieving purging and cleaning of the temperature measurement window 502 and further improving the stability and accuracy of the temperature measurement results.

[0140] In some embodiments, the exhaust port 5015 may introduce gas into the furnace chamber 400. In some embodiments, the exhaust port 5015 may be provided in the second chamber portion 5013. In some embodiments, the exhaust port 5015 may be provided in a bottom end surface of the second chamber portion 5013. In some embodiments, the exhaust port 5015 may be in communication with the inlet port 5014 of the furnace chamber 400. In some embodiments, the exhaust port 5015 may be provided directly in the furnace chamber 400 and in communication with the second chamber portion 5013.

[0141] An intake port 5014 is provided in the first chamber portion 5011, an exhaust port 5015 is provided in the second chamber portion 5012, and both ends of the second chamber portion 5013 having a smaller diameter are connected to the main body portion 5012 having a larger diameter and the furnace chamber 400, respectively, to form a structure similar to a "Venturi tube." Since the air flows in from the first chamber portion 5011 and out from the second chamber portion 5012, the pressure at one end of the second chamber portion 5013 adjacent to the main body portion 5012 is higher than the pressure at one end of the second chamber portion 5013 adjacent to the furnace chamber 400. Due to the presence of such a pressure difference, dust generated in the furnace chamber 400 is unlikely to enter the temperature measurement chamber 501 and further reach the temperature measurement window 502, so that the cleanliness of the temperature measurement window 502 can be guaranteed, which is advantageous for improving the stability and accuracy of temperature measurement.

[0142] In some embodiments, by setting a proportional relationship between the diameter of the second chamber portion 5012 or the exhaust port 5015 and the diameter of other parts of the temperature measurement structure (e.g., the intake port 5014, the main body portion 5012, the furnace chamber 400, etc.), the pressure difference between the main body portion 5012 and the furnace chamber 400 can be adjusted to achieve the effect of effectively ensuring the cleanliness of the temperature measurement window 502.

[0143] In some embodiments, the diameter of the vent 5015 is smaller than the diameter of the body portion 5012. In some embodiments, the diameter of the vent 5015 is much smaller than the diameter of the body portion 5012. In some embodiments, the ratio of the diameter of the vent 5015 to the diameter of the body portion 5012 may be within a first predetermined ratio range.

[0144] In some embodiments, the first predetermined ratio range may be between 1:5 and 1:20. In some embodiments, the first predetermined ratio range may be between 1:8 and 1:17. In some embodiments, the first predetermined ratio range may be between 1:11 and 1:14. In some embodiments, the first predetermined ratio range may be between 1:5 and 1:15. In some embodiments, the first predetermined ratio range may be between 1:10 and 1:20.

[0145] By setting the diameter of the exhaust port 5015 to be smaller than the diameter of the main body portion 5012 (or the ratio of the diameters of the two is within a predetermined range), the gas pressure in the temperature measurement chamber 501 can be made greater than the gas pressure in the furnace chamber 400, and the existence of such a pressure difference makes it difficult for dust generated in the furnace chamber 400 to enter the temperature measurement chamber 501 and then reach the temperature measurement window 502, thereby ensuring the cleanliness of the temperature measurement window 502 and improving the stability and accuracy of temperature measurement.

[0146] In some embodiments, the diameter of the body portion 5012 is smaller than the diameter of the furnace chamber 400. In some embodiments, the diameter of the body portion 5012 is much smaller than the diameter of the furnace chamber 400. In some embodiments, the ratio of the diameter of the body portion 5012 to the diameter of the furnace chamber 400 may be within a second predetermined ratio range. In some embodiments, the second predetermined ratio range may be 1:5 to 1:25. In some embodiments, the second predetermined ratio range may be 1:8 to 1:22. In some embodiments, the second predetermined ratio range may be 1:11 to 1:19. In some embodiments, the second predetermined ratio range may be 1:14 to 1:16. In some embodiments, the second predetermined ratio range may be 1:5 to 1:20. In some embodiments, the second predetermined ratio range may be 1:10 to 1:25. In some embodiments, the second predetermined ratio range may be 1:5 to 1:15. In some embodiments, the second predetermined ratio range may be 1:15 to 1:25.

[0147] In some embodiments, the diameter of the exhaust port 5015 may be smaller than the diameter of the intake port 5014 .

[0148] In some embodiments, the ratio of the diameter of the exhaust port 5015 to the diameter of the intake port 5014 may be within a third predetermined ratio range. In some embodiments, the third predetermined ratio range may be between 1:1.5 and 1:5. In some embodiments, the third predetermined ratio range may be between 1:2 and 1:4.5. In some embodiments, the third predetermined ratio range may be between 1:2.5 and 1:4. In some embodiments, the third predetermined ratio range may be between 1:3 and 1:3.5. In some embodiments, the third predetermined ratio range may be between 1:1.5 and 1:3.5. In some embodiments, the third predetermined ratio range may be between 1:3 and 1:5.

[0149] By setting the diameter of the exhaust port 5015 to be smaller than the diameter of the intake port 5014, the gas concentration in the temperature measurement chamber 501 can be made greater than the gas concentration in the furnace chamber 400 (the gas pressure in the temperature measurement chamber 501 is greater than the gas pressure in the furnace chamber 400). Due to the presence of such a pressure difference, it becomes difficult for dust generated in the furnace chamber 400 to enter the temperature measurement chamber 501 and further reach the temperature measurement window 502, so that the cleanliness of the temperature measurement window 502 can be guaranteed, which is advantageous for improving the stability and accuracy of temperature measurement.

[0150] Fig. 12 is a schematic diagram of a temperature measurement structure according to some embodiments of the present disclosure. The temperature measurement structure will be described in detail below with reference to Fig. 9. As shown in Fig. 12, in some embodiments, the temperature measurement structure may further include a heater 5016.

[0151] The heater 5016 may heat the body portion 5012. In some embodiments, the heater 5016 may be coated or surrounded on the exterior surface or the space surrounding the exterior surface of the body portion 5012 to uniformly heat the body portion 5012.

[0152] In some embodiments, the heater 5016 may include a resistive heating assembly, an inductive heating assembly, or the like.

[0153] By heating the main body portion 5012, the gas temperature in the temperature measurement chamber 501 can be made higher than the gas temperature in the furnace chamber 400, and the gas pressure in the temperature measurement chamber 501 can also be made higher than the gas pressure in the furnace chamber 400. Due to the existence of such a pressure difference, it becomes difficult for dust generated in the furnace chamber 400 to enter the temperature measurement chamber 501 and then reach the temperature measurement window 502. This ensures the cleanliness of the temperature measurement window 502, which is advantageous for improving the stability and accuracy of temperature measurement.

[0154] 13 is a schematic diagram of a temperature measurement structure according to some embodiments of the present disclosure. Hereinafter, the temperature measurement structure will be described in detail with reference to FIG. 10. As shown in FIG. 13, in some embodiments, the temperature measurement structure may further include a cooler 5017. The cooler 5017 may cool the second chamber portion 5013.

[0155] In some embodiments, the cooling method of the cooler 5017 may include a cooling method such as water cooling, air cooling, etc. In some embodiments, the cooler 5017 may be provided (e.g., covered) on the outer surface or a space surrounding the outer surface of the second chamber portion 5013 to uniformly cool the second chamber portion 5013.

[0156] By providing a cooler 5017 on the outer surface of the second chamber portion 5013, the temperature of the second chamber portion 5013 becomes lower than the temperature of the main body portion 5012, and the pressure difference between the main body portion 5012 and the second chamber portion 5013 can be increased.When dust generated in the furnace chamber 400 reaches the vicinity of the second chamber portion 5013, it cools and condenses, making it difficult for the dust to enter the temperature measurement chamber 501 and further reach the temperature measurement window 502, thereby effectively preventing the accumulation of dust inside the temperature measurement window 502.

[0157] Fig. 14 is a schematic diagram of a temperature measurement structure according to some embodiments of the present specification. The temperature measurement structure will be described in detail below with reference to Fig. 11. As shown in Fig. 14, in some embodiments, the temperature measurement structure may further include a deposition chamber 600. The deposition chamber 600 may be in communication with the furnace chamber 400 to deposit dust generated in the furnace chamber 400.

[0158] In some embodiments, the deposition chamber 600 may be closed at one end and communicate with the furnace chamber 400 at the other end. In some embodiments, the deposition chamber 600 may be formed with two or more communication holes each communicating with the furnace chamber 400 via an independent passage, and gas in the furnace chamber 400 may enter the deposition chamber 600 through the passage.

[0159] In some embodiments, the deposition chambers 600 may be two in number and symmetrically disposed on both sides of the furnace chamber 400 to make the environmental impact within the furnace chamber 400 as uniform as possible. In some embodiments, the number of deposition chambers 600 may be one, three or more, and is not limited thereto herein.

[0160] Since the fluidity of the gas in the deposition chamber 600 is poorer than that in the furnace chamber 400, by providing the deposition chamber 600, dust generated in the furnace chamber 400 is deposited in the deposition chamber, thereby reducing the amount of dust entering the temperature measurement chamber 501 and effectively preventing the deposition of dust inside the temperature measurement window 502.

[0161] In some embodiments, the temperature in the deposition chamber 600 may be lower than the temperature in the furnace chamber 400. In some embodiments, the temperature in the deposition chamber 600 may be controlled by cooling the deposition chamber 600 with a cooler. The cooler may be provided similarly to the provision of the cooler 5017 described above, and will not be described here.

[0162] By controlling the temperature in the deposition chamber 600 to be lower than the temperature in the furnace chamber 400, the dust in the furnace chamber 400 is more likely to accumulate in the deposition chamber 600 due to cooling, and the accumulation of dust inside the temperature measurement window 502 can be reduced.

[0163] Fig. 15 is a schematic diagram of a temperature measurement structure according to some embodiments of the present specification. The temperature measurement structure will be described in detail below with reference to Fig. 12. As shown in Fig. 15, in some embodiments, the temperature measurement structure may further include a deposition chamber 600. The deposition chamber 600 may be in communication with the second chamber portion 5013 to deposit dust generated in the furnace chamber 400 and moved to the vicinity of the second chamber portion 5013.

[0164] In some embodiments, the deposition chamber 600 may have one closed end and the other end communicating with the second chamber portion 5013. In some embodiments, the deposition chamber 600 may have two or more communication holes formed therein, each of which communicates with the second chamber portion 5013 via an independent passage.

[0165] In some embodiments, the deposition chambers 600 may be two in number and symmetrically disposed on both sides of the second chamber portion 5013 in order to make the environmental impact within the furnace chamber 400 as uniform as possible. In some embodiments, the number of deposition chambers 600 may be one, three or more, and is not limited thereto herein.

[0166] Since the fluidity of the gas in the deposition chamber 600 is poorer than that in the temperature measurement chamber 501 and the furnace chamber 400, by providing the deposition chamber 600, dust generated in the furnace chamber 400 is likely to be deposited in the deposition chamber when it moves near the second chamber portion 5013, thereby reducing the amount of dust entering the temperature measurement chamber 501 and effectively preventing the deposition of dust inside the temperature measurement window 502.

[0167] In some embodiments, the temperature in the deposition chamber 600 is lower than the temperature in the furnace chamber 400 and the temperature in the temperature measurement chamber 501 , and the pressure in the deposition chamber 600 is lower than the pressure in the temperature measurement chamber 501 .

[0168] In some embodiments, the temperature in the deposition chamber 600 may be controlled by cooling the deposition chamber 600 with a chiller, which may be provided similarly to the chiller 5017 described above, and will not be described here.

[0169] By controlling the temperature in the deposition chamber 600 to be lower than the temperature in the furnace chamber 400 and the temperature measurement chamber 501, and by controlling the pressure in the deposition chamber 600 to be lower than the pressure in the temperature measurement chamber 501, the dust in the furnace chamber 400 is more likely to accumulate in the deposition chamber 600 due to cooling, and the accumulation of dust inside the temperature measurement window 502 can be reduced.

[0170] FIG. 16 is a schematic diagram of an exemplary crystal growing apparatus according to some embodiments of the present disclosure.

[0171] In some embodiments, the heat retention device 200 may include a first heat retention assembly 201. In some embodiments, the first heat retention assembly 201 is provided at least on the periphery side of the crucible 100. In some embodiments, the first heat retention assembly 201 may be provided only on the periphery side of the crucible 100. In some embodiments, the first heat retention assembly 201 may be provided on the periphery side and the bottom side of the crucible 100 at the same time. In some embodiments, the first heat retention assembly 201 may be provided on the periphery side and the top side of the crucible 100 at the same time. In some embodiments, the first heat retention assembly 201 may be provided on the periphery side, the top side, and the bottom side of the crucible 100 at the same time. In some embodiments, the first heat retention assembly 201 includes an inner layer 2011, an outer layer 2012, and an intermediate layer 2013, and the intermediate layer 2013 is located between the inner layer 2011 and the outer layer 2012. By providing a multi-layer insulation structure combining an inner layer, an outer layer and an intermediate layer, even if the inner layer evaporates and becomes thinner due to heat and the outer layer loses its insulation performance due to the accumulation of impurities, the intermediate layer can still maintain good insulation effect, and the independent structures make the inner layer and / or outer layer easier to replace, thereby reducing the maintenance cost of the insulation device and improving the maintenance efficiency of the insulation device.

[0172] In some embodiments, the thickness of the inner layer 2011 needs to meet a certain condition in order to avoid a too thin thickness resulting in high replacement frequency, and a too thick thickness resulting in high costs, etc. Also, the thickness of the inner layer 2011 may be provided in an independent structure along the axial direction, so as to maintain good heat retention effect at different positions in the axial direction and facilitate directional maintenance and replacement according to wear conditions at different positions. This will be described in detail below.

[0173] In some embodiments, the thickness of the inner layer 2011 may be set within a certain thickness range, taking into consideration the cost and replacement frequency of the inner layer 2011. In some embodiments, the thickness of the inner layer 2011 may be within a range of 4 mm to 57 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 5 mm to 55 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 7 mm to 52 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 10 mm to 50 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 13 mm to 47 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 15 mm to 45 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 17 mm to 43 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 20 mm to 40 mm. In some embodiments, the thickness of the inner layer 2011 may be within a range of 22 mm to 37 mm. In some embodiments, the thickness of the inner layer 2011 may be in the range of 25 mm to 35 mm. In some embodiments, the thickness of the inner layer 2011 may be in the range of 27 mm to 32 mm. In some embodiments, the thickness of the inner layer 2011 may be in the range of 28 mm to 30 mm.

[0174] By setting the thickness of the inner layer within a certain thickness range, it is possible to reduce the initial cost of the inner layer, reduce the replacement frequency and replacement cost of the inner layer, extend the service life of the inner layer, and maintain process stability during the crystal growth process.

[0175] In some embodiments, in order to ensure that the intermediate layer 2013 can maintain a good and stable heat retention effect when the inner layer 2011 and the outer layer 2012 are consumed, and also taking into consideration the cost, it is necessary to set the thickness of the intermediate layer 2013 within a certain range. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 28 mm to 143 mm. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 30 mm to 140 mm. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 35 mm to 135 mm. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 40 mm to 130 mm. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 45 mm to 135 mm. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 50 mm to 130 mm. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 55 mm to 125 mm. In some embodiments, the thickness of the intermediate layer 2013 may be within a range of 60 mm to 120 mm. In some embodiments, the thickness of the intermediate layer 2013 may be in the range of 65 mm to 115 mm. In some embodiments, the thickness of the intermediate layer 2013 may be in the range of 70 mm to 110 mm. In some embodiments, the thickness of the intermediate layer 2013 may be in the range of 75 mm to 105 mm. In some embodiments, the thickness of the intermediate layer 2013 may be in the range of 80 mm to 100 mm. In some embodiments, the thickness of the intermediate layer 2013 may be in the range of 85 mm to 95 mm. In some embodiments, the thickness of the intermediate layer 2013 may be in the range of 88 mm to 90 mm.

[0176] By setting the thickness of the intermediate layer within a certain range, impurities generated when the crucible and the inner layer are heated and volatilize can volatilize to the outer layer as much as possible and do not remain in the intermediate layer, without affecting the heat retention effect of the intermediate layer. Accordingly, even if the inner layer becomes thin due to wear and impurities accumulate in the outer layer, it is possible to ensure that the intermediate layer can maintain a good and stable heat retention effect, and there is almost no need to replace the intermediate layer during the production process, thereby reducing production costs.

[0177] In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 must meet certain conditions in order to deposit as much of the volatiles as possible in the outer layer and not in the intermediate layer. In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 may be greater than 50 mm. In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 may be greater than 55 mm. In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 may be greater than 60 mm. In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 may be greater than 65 mm. In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 may be greater than 70 mm. In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 may be greater than 75 mm. In some embodiments, the combined thickness of the intermediate layer 2013 and the inner layer 2011 may be greater than 80 mm.

[0178] By setting the total thickness of the intermediate layer and the inner layer to be greater than a certain value, the temperature on the outside of the intermediate layer becomes as high as possible above the deposition temperature or crystallization temperature of the volatiles, and the volatiles are deposited as much as possible in the outer layer rather than in the intermediate layer, thereby maintaining good heat retention effect of the intermediate layer.

[0179] In some embodiments, the thickness of the intermediate layer 2013 is greater than the thickness of the inner layer 2011 and the thickness of the outer layer 2012. By setting the thickness of the intermediate layer to be greater than the thickness of the inner layer and the thickness of the outer layer, it is ensured that the intermediate layer can maintain a good and stable heat retention effect when the inner layer is worn out and impurities are deposited on the outer layer, causing a change in the heat retention effect, thereby reducing the impact of the wear of the inner layer and the deposition of impurities on the outer layer on the heat retention performance of the entire heat retention device, improving the stability of the heat retention performance, and when the inner layer is worn out and thin and needs to be replaced, the intermediate layer can play a supporting role and improve the structural stability of the heat retention device.

[0180] In some embodiments, the thickness of the outer layer 2012 needs to be set within a certain thickness range, taking into consideration the replacement cost in the actual production process and the actual heat retention effect. In some embodiments, the thickness of the outer layer 2012 may be within a range of 7 mm to 42 mm. In some embodiments, the thickness of the outer layer 2012 may be within a range of 10 mm to 40 mm. In some embodiments, the thickness of the outer layer 2012 may be within a range of 12 mm to 38 mm. In some embodiments, the thickness of the outer layer 2012 may be within a range of 15 mm to 35 mm. In some embodiments, the thickness of the outer layer 2012 may be within a range of 17 mm to 33 mm. In some embodiments, the thickness of the outer layer 2012 may be within a range of 20 mm to 30 mm. In some embodiments, the thickness of the outer layer 2012 may be within a range of 22 mm to 28 mm. In some embodiments, the thickness of the outer layer 2012 may be within a range of 25 mm to 27 mm.

[0181] In some embodiments, the total thickness of the inner layer 2011, the intermediate layer 2013, and the outer layer 2012 must be set within a certain range by combining the above and taking into consideration the maintenance cost and the heat retention effect of the entire heat retention device. In some embodiments, the total thickness of the inner layer 2011, the intermediate layer 2013, and the outer layer 2012 may be within a range of 50 mm to 200 mm. In some embodiments, the total thickness of the inner layer 2011, the intermediate layer 2013, and the outer layer 2012 may be within a range of 60 mm to 190 mm. In some embodiments, the total thickness of the inner layer 2011, the intermediate layer 2013, and the outer layer 2012 may be within a range of 70 mm to 180 mm. In some embodiments, the total thickness of the inner layer 2011, the intermediate layer 2013, and the outer layer 2012 may be within a range of 80 mm to 170 mm. In some embodiments, the total thickness of the inner layer 2011, the intermediate layer 2013, and the outer layer 2012 may be within a range of 90 mm to 160 mm. In some embodiments, the combined thickness of the inner layer 2011, the middle layer 2013, and the outer layer 2012 may be in the range of 100 mm to 150 mm. In some embodiments, the combined thickness of the inner layer 2011, the middle layer 2013, and the outer layer 2012 may be in the range of 110 mm to 140 mm. In some embodiments, the combined thickness of the inner layer 2011, the middle layer 2013, and the outer layer 2012 may be in the range of 120 mm to 130 mm.

[0182] In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 needs to be set within a certain range by combining the above and taking into consideration the maintenance cost and the heat retention effect of the entire heat retention device. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 may be within a range of 1:2 to 1:10. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 may be within a range of 1:3 to 1:9. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 may be within a range of 1:4 to 1:8. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 may be within a range of 1:5 to 1:7. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 may be within a range of 1:6 to 1:6.

[0183] In some embodiments, the ratio of the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 must be set within a certain range by combining the above and taking into consideration the maintenance cost and heat retention effect of the entire heat retention device. In some embodiments, the ratio of the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 2:0.5 to 10:3. In some embodiments, the ratio of the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 3:0.5 to 9:3. In some embodiments, the ratio of the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 4:0.5 to 8:3. In some embodiments, the ratio of the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 5:0.5 to 7:3. In some embodiments, the ratio of the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 6:0.5 to 6:3. In some embodiments, the ratio of the thickness of intermediate layer 2013 to the thickness of outer layer 2012 may be in the range of 2:1 to 10:2.5. In some embodiments, the ratio of the thickness of intermediate layer 2013 to the thickness of outer layer 2012 may be in the range of 2:1.5 to 10:2. In some embodiments, the ratio of the thickness of intermediate layer 2013 to the thickness of outer layer 2012 may be in the range of 2:2 to 10:1.5. In some embodiments, the ratio of the thickness of intermediate layer 2013 to the thickness of outer layer 2012 may be in the range of 2:3 to 10:1.

[0184] In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the outer layer 2012 needs to be set within a certain range by combining the above and taking into consideration the maintenance cost and heat retention effect of the entire heat retention device. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the outer layer 2012 may be within a range of 1:0.5 to 1:3. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the outer layer 2012 may be within a range of 1:1 to 1:2.5. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the outer layer 2012 may be within a range of 1:1.5 to 1:2. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the outer layer 2012 may be within a range of 1:2 to 1:1.5. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the outer layer 2012 may be within a range of 1:3 to 1:1.

[0185] In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 must be set within a certain range by combining the above and taking into consideration the maintenance cost and heat retention effect of the entire heat retention device. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 1:2:0.5 to 1:10:3. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 1:2:1 to 1:10:2.5. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the intermediate layer 2013 to the thickness of the outer layer 2012 may be within a range of 1:2:1.5 to 1:10:2. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the middle layer 2013 to the thickness of the outer layer 2012 may be in the range of 1:2:2 to 1:10:1.5. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the middle layer 2013 to the thickness of the outer layer 2012 may be in the range of 1:2:3 to 1:10:1. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the middle layer 2013 to the thickness of the outer layer 2012 may be in the range of 1:3:0.5 to 1:9:3. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the middle layer 2013 to the thickness of the outer layer 2012 may be in the range of 1:4:0.5 to 1:8:3. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the middle layer 2013 to the thickness of the outer layer 2012 may be in the range of 1:5:0.5 to 1:7:3. In some embodiments, the ratio of the thickness of the inner layer 2011 to the thickness of the middle layer 2013 to the thickness of the outer layer 2012 may be in the range of 1:6:0.5 to 1:6:3.

[0186] In some embodiments, the material of the inner layer 2011 may include graphite felt. By setting the inner layer to be made of graphite felt, it is possible to ensure that the thermal insulation performance is stable and easy to replace.

[0187] In some embodiments, the material of outer layer 2012 can be different from the material of inner layer 2011. In some embodiments, the density of outer layer 2012 is greater than the density of inner layer 2011. In some embodiments, the material of outer layer 2012 includes at least one of zirconia, alumina, a carbon material, or a carbon fiber material.

[0188] By setting the outer layer material to be relatively dense and with a relatively low thermal conductivity, the impact of impurities volatilized by heat and deposited on the outer layer on the thermal insulation performance of the outer layer can be reduced, and the thermal insulation performance of the thermal insulation device can be stabilized. At the same time, the cost of the outer layer material is lower than that of the inner layer material, and the overall cost can be reduced.

[0189] In some embodiments, the material of the middle layer 2013 may be the same as or different from the inner layer 2011, depending on practical needs or costs. For example, the material of the middle layer 2013 may include graphite felt, ceramic, etc.

[0190] In some embodiments, during the crystal growth process, it is necessary to set the impurity ratio of the inner layer, intermediate layer and / or outer layer material to be lower than a certain amount to prevent impurities from the inner layer, intermediate layer and / or outer layer from entering the crucible and causing crystal defects.

[0191] In some embodiments, the impurity percentage of the material of inner layer 2011 may be less than 100 ppm. In some embodiments, the impurity percentage of the material of inner layer 2011 may be less than 90 ppm. In some embodiments, the impurity percentage of the material of inner layer 2011 may be less than 80 ppm. In some embodiments, the impurity percentage of the material of inner layer 2011 may be less than 70 ppm. In some embodiments, the impurity percentage of the material of inner layer 2011 may be less than 60 ppm. In some embodiments, the impurity percentage of the material of inner layer 2011 may be less than 50 ppm.

[0192] In some embodiments, the impurity rate of the material of intermediate layer 2013 may be less than 100 ppm. In some embodiments, the impurity rate of the material of intermediate layer 2013 may be less than 90 ppm. In some embodiments, the impurity rate of the material of intermediate layer 2013 may be less than 80 ppm. In some embodiments, the impurity rate of the material of intermediate layer 2013 may be less than 70 ppm. In some embodiments, the impurity rate of the material of intermediate layer 2013 may be less than 60 ppm. In some embodiments, the impurity rate of the material of intermediate layer 2013 may be less than 50 ppm.

[0193] In some embodiments, the impurity percentage of the material of outer layer 2012 may be less than 100 ppm. In some embodiments, the impurity percentage of the material of outer layer 2012 may be less than 90 ppm. In some embodiments, the impurity percentage of the material of outer layer 2012 may be less than 80 ppm. In some embodiments, the impurity percentage of the material of outer layer 2012 may be less than 70 ppm. In some embodiments, the impurity percentage of the material of outer layer 2012 may be less than 60 ppm. In some embodiments, the impurity percentage of the material of outer layer 2012 may be less than 50 ppm.

[0194] Usually, the transport of impurities in the inner layer, intermediate layer and / or outer layer is affected by two factors: temperature gradient and concentration, and most of the impurities are transported out of the heat-retaining device by the drive of the temperature gradient, and a small amount of impurities is diffused inward by the drive of the concentration factor and reaches the crucible. Therefore, in order to ensure that the impurities that enter the crucible and cause crystal defects during the crystal growth process are as few as possible, it is necessary to set the impurity rate of the material of the inner layer, intermediate layer and / or outer layer (especially the inner layer) to satisfy a certain relationship.

[0195] In some embodiments, the impurity rate of the material of the outer layer 2012 is the lowest. In some embodiments, the impurity rate of the material of the intermediate layer 2013 is the lowest. In some embodiments, the impurity rate of the material of the intermediate layer 2013 is the lowest. In some embodiments, the impurity rate of the material of the inner layer 2011 is the lowest. In some embodiments, the impurity rate of the material of the outer layer 2012 is the lowest. In some embodiments, the impurity rate of the material of the intermediate layer 2013 is the lowest.

[0196] In some embodiments, in the actual crystal growth process, the inner layer 2011 is provided adjacent to the outside of the crucible, so that the temperature is high and impurities in the inner layer 2011 are volatilized by heat, so that the inner layer is consumed and becomes thin, and the heat retention performance is reduced. Therefore, the inner layer 2011 may be designed to have an independent replaceable structure to facilitate subsequent replacement. In addition, in combination with the above, since an axial temperature gradient must exist in the crystal growth process, the temperature at different axial positions is different accordingly, and the required heat retention performance is also different. Therefore, the inner layer 2011 may be designed to have a structure with different thicknesses along the axial direction according to the temperature gradient, so that good heat retention effect can be maintained at different axial positions accordingly, and directional maintenance and / or replacement can be easily performed for the consumption situation at different positions. Hereinafter, the specific structure of the inner layer 2011 will be described in detail with reference to Figs. 17A to 17D.

[0197] In some embodiments, as shown in FIG. 17A, the inner layer 2011 may include at least two heat-retaining sections 111. In some embodiments, the at least two heat-retaining sections 111 may be stacked one above the other. In some embodiments, the heat-retaining section 111 may be an annular heat-retaining section, and the at least two annular heat-retaining sections may be stacked one above the other to form a cylindrical structure. In some embodiments, in order to ensure the stability of the inner layer 2011 formed by stacking the sections one above the other, the upper and lower contact surfaces of the two adjacent heat-retaining sections 111 may be made into a nested structure. For example, for two adjacent heat-retaining sections 111, a protrusion is provided on the lower surface of the upper heat-retaining section 111, and a groove corresponding to the protrusion is provided on the upper surface of the lower heat-retaining section 111, so that the two adjacent heat-retaining sections are more tightly and firmly attached to each other after being stacked one above the other.

[0198] In some embodiments, as shown in FIG. 17B, each heat-insulating section 111 may include at least two heat-insulating blocks 112. In some embodiments, at least two heat-insulating blocks 112 may be joined in a block shape along the circumferential direction to form a ring structure. In some embodiments, in order to ensure the stability of the heat-insulating section 111 formed by joining in a block shape along the circumferential direction, two contact surfaces of two adjacent heat-insulating blocks 112 may be made into a nested structure. For example, for two adjacent heat-insulating blocks 112, a protrusion is provided on the contact surface of one heat-insulating block 112, and a corresponding groove is provided on the contact surface of the other heat-insulating block that contacts the protrusion, so that the two adjacent heat-insulating blocks are more tightly and firmly attached together after being joined in a block shape along the circumferential direction.

[0199] In some embodiments, the thickness of the inner layer 2011 along the axial direction may vary, as shown in Figure 17C. In some embodiments, the thickness of the inner layer 2011 along the axial direction may be designed based on the temperature field distribution (or temperature gradient).

[0200] By setting the thickness of the inner layer to be different along the axial direction (e.g., designing the axial thickness of the inner layer based on the temperature field distribution), the thickness of the inner layer can be adjusted according to the actual temperature field distribution, and directional replacement can be performed for the wear conditions at different positions of the inner layer (e.g., replacing only one or more insulation sections or insulation blocks at a time), thereby maintaining good insulation effect and reducing production costs.

[0201] In some embodiments, as shown in FIG. 17D, the inner layer 2011 is provided as at least two thermal sections 111 stacked one on top of the other, with different thicknesses along the axial direction.

[0202] In some embodiments, since the structure and thermal insulation performance of the intermediate layer 2013 change little over time, the intermediate layer 2013 may be an entire structure (e.g., an entire thermal insulation tube), which makes it easy to install the intermediate layer and maintains good thermal insulation effect, and at the same time, it can play a supporting role when replacing the inner layer, and improve the structural stability of the thermal insulation device.

[0203] In some embodiments, the inner layer 2011 and the middle layer 2013 may be provided in intimate contact with each other. In some embodiments, the middle layer 2013 and the outer layer 2012 may be provided in intimate contact with each other.

[0204] In some embodiments, a gap may be provided between the inner layer 2011 and the middle layer 2013, as shown in FIG. 18. In some embodiments, a gap may be provided between the middle layer 2013 and the outer layer 2012. In some embodiments, the size of the gap between the inner layer 2011 and the middle layer 2013 and the gap between the middle layer 2013 and the outer layer 2012 may be the same or different. In some embodiments, the size of the gap between the inner layer 2011 and the middle layer 2013 may be the shortest distance between the outer surface of the inner layer 2011 and the inner surface of the middle layer 2013. In some embodiments, the size of the gap between the middle layer 2013 and the outer layer 2012 may be the shortest distance between the outer surface of the middle layer 2013 and the inner surface of the outer layer 2012.

[0205] In some embodiments, the gap size may be in the range of 0mm to 10mm. In some embodiments, the gap size may be in the range of 1mm to 9mm. In some embodiments, the gap size may be in the range of 2mm to 8mm. In some embodiments, the gap size may be in the range of 3mm to 7mm. In some embodiments, the gap size may be in the range of 4mm to 6mm. In some embodiments, the gap size may be in the range of 4mm to 5mm.

[0206] In some embodiments, the gap between the inner layer 2011 and the middle layer 2013 may not be filled with thermal material, as shown in Figure 18. In some embodiments, the gap between the middle layer 2013 and the outer layer 2012 may not be filled with thermal material, as shown in Figure 18.

[0207] Since the thermal conductivity of the air in the gaps is lower than that of a solid, the air in the gaps functions as a heat-retaining layer and can perform a heat-retaining function, and since there are gaps between the inner layer, the middle layer and the outer layer, it is easy to replace the inner layer later.

[0208] In some embodiments, the gap between the inner layer 2011 and the middle layer 2013 may be filled with a thermal material. In some embodiments, the gap between the middle layer 2013 and the outer layer 2012 may be filled with a thermal material. In some embodiments, the thermal material may include one or more of a particulate material, a felt material, or a tile material. In some embodiments, the material of the thermal material may include one or more of a silicon oxide, an alumina, a zirconia, a graphite, a carbon fiber, or a ceramic. In some embodiments, the gap between the inner layer 2011 and the middle layer 2013 may be filled with a graphite soft felt.

[0209] In some embodiments, the gap between inner layer 2011 and middle layer 2013 may be filled with thermal material, and the gap between middle layer 2013 and outer layer 2012 may not be filled with thermal material. In some embodiments, the gap between inner layer 2011 and middle layer 2013 may not be filled with thermal material, and the gap between middle layer 2013 and outer layer 2012 may be filled with thermal material.

[0210] Filling the gap between the inner layer and the intermediate layer and the gap between the intermediate layer and the outer layer with a heat-insulating material can improve the heat-insulating performance of the heat-insulating device, and can contribute to adjusting and controlling the temperature of the outer layer to a predetermined temperature (for example, a temperature set before crystal growth). In addition, the heat-insulating material (for example, graphite soft felt) can be easily removed, the inner layer can be easily replaced, and after replacing the inner layer, the heat-insulating material can be inserted into the gap and used repeatedly, thereby reducing production costs.

[0211] In some embodiments, as shown in Figure 19, the space between the middle layer 2013 and the outer layer 2012 may be filled with graphite paper 2014. Since the graphite paper has low porosity, and volatiles are difficult to pass through and are deposited on the surface of the graphite paper, the graphite paper can be used as a pre-deposition layer for volatiles, which can accordingly reduce the amount of volatiles deposited on the outer layer and reduce wear of the outer layer. Moreover, the graphite paper is easy to replace and has low cost, which can improve the stability of the heat retention performance and reduce production costs.

[0212] In some embodiments, the space between middle layer 2013 and outer layer 2012 may be filled with other materials with low porosity, and this disclosure is not limited thereto.

[0213] In some embodiments, the insulation apparatus 200 further includes a second insulation assembly 202 disposed on top of the crystal growing apparatus 10. For example, as shown in FIG. 20, the second insulation assembly 202 can be a top insulation layer.

[0214] In some embodiments, the second thermal insulation assembly 202 includes a laminated structure made of the same material. For example, the material of the laminated structure may be at least one of graphite felt, zirconia, alumina, carbon material, or carbon fiber material. By providing the laminated structure, the thickness of the second thermal insulation assembly can be changed according to the number of layers of the laminated structure, so that the thickness of the second thermal insulation assembly can be adjusted according to the actual temperature field distribution, which makes it easier for the thermal insulation device to maintain a good and stable thermal insulation effect and reduces production costs. For example, if the thickness of the second thermal insulation assembly 202 needs to be increased, the number of layers of the laminated structure can be increased to achieve the increase in thickness; similarly, if the thickness of the second thermal insulation assembly 202 needs to be decreased, the number of layers of the laminated structure can be decreased to achieve the decrease in thickness.

[0215] In some embodiments, the number of layers in the laminate structure of second thermal insulation assembly 202 can be between 0 and 15 layers. In some embodiments, the number of layers in the laminate structure of second thermal insulation assembly 202 can be between 0 and 10 layers. In some embodiments, the number of layers in the laminate structure of second thermal insulation assembly 202 can be between 0 and 6 layers.

[0216] In some embodiments, the second insulation assembly 202 may include a plurality of insulation sections. In some embodiments, the insulation sections of the second insulation assembly 202 may have an annular structure, each insulation section may have a different diameter, and the plurality of insulation sections may be telescopically arranged along the radial direction. In some embodiments, among the plurality of insulation sections telescopically arranged in the radial direction, adjacent insulation sections abut each other to form the second insulation assembly 202. By providing a plurality of insulation sections distributed in the radial direction, it is possible to individually provide a thickness (e.g., number of layers) for each insulation section, thereby adjusting and controlling the radial temperature distribution in the crystal growth apparatus 10. In some embodiments, it is possible to improve the accuracy of adjusting and controlling the radial temperature distribution in the growth apparatus 10 by setting the number of insulation sections distributed in the radial direction. In some embodiments, the number of insulation sections distributed in the radial direction may be 2 to 10. In some embodiments, the number of insulation sections distributed in the radial direction may be 2 to 6. In some embodiments, the number of insulation sections distributed in the radial direction may be 2 to 15.

[0217] In some embodiments, the insulation device may further include a third insulation assembly 203, and the second insulation assembly 202 is provided on the top exterior of the crucible 100. For example, as shown in FIG. 21, the third insulation assembly 203 may be a crucible top insulation layer.

[0218] In some embodiments, the third heat-insulating assembly 203 includes an annular structure or a circular structure. For example, the material of the third heat-insulating assembly 203 may include one or more of graphite felt, zirconia, alumina, carbon material, or carbon fiber material. In some embodiments, the heat-insulating effect of the third heat-insulating assembly 203 can be changed by setting parameters of the annular structure. In some embodiments, the parameters of the annular structure may include an inner diameter (also referred to as an inner radius) of the annular structure and an outer diameter (also referred to as an outer radius) of the annular structure. As shown in FIG. 6, the inner diameter of the annular structure may refer to the distance from the inside of the annular structure to the axis of the crucible 100, and the outer diameter of the annular structure may refer to the distance from the outside of the annular structure to the axis of the crucible 100. By setting the parameters of the annular structure, the heat-insulating effect of the third heat-insulating assembly can be changed according to the range of the inner diameter and outer diameter of the annular structure, so that the heat-insulating effect of the third heat-insulating assembly can be adjusted according to the actual temperature field distribution, making it easier for the heat-insulating device to maintain a good and stable heat-insulating effect and reducing production costs. For example, the temperature of the edge region in the crucible 100 can be increased by increasing the outer diameter of the annular structure, and the temperature of the center region in the crucible 100 can be increased by decreasing the inner diameter of the annular structure.

[0219] In some embodiments, the inner radius r of the ring structure i In some embodiments, the inner radius r of the annular structure may range from 10 mm to 90 mm. i In some embodiments, the inner radius r of the annular structure may range from 30 mm to 90 mm. i In some embodiments, the inner radius r of the annular structure may range from 30 mm to 60 mm. i The range may be from 60 mm to 90 mm.

[0220] In some embodiments, the outer diameter r of the ring structure o In some embodiments, the outer diameter r of the annular structure may range from 90 mm to 200 mm. o In some embodiments, the outer diameter r of the annular structure may range from 90 mm to 150 mm. oThe range may be 90 mm to 120 mm.

[0221] In some embodiments, the outer diameter r of the ring structure o is related to the size of the crucible 100. In some embodiments, the outer diameter r o The ratio of the outer diameter r of the annular structure to the radius of the crucible 100 may be between 0.6 and 1.2. o The ratio of the outer diameter r of the annular structure to the radius of the crucible 100 may be between 0.8 and 1.2. o The ratio of the outer diameter r of the annular structure to the radius of the crucible 100 may be between 0.6 and 1. In some embodiments, the ratio of the outer diameter r o The ratio of the diameter of the crucible 100 to the radius of the crucible 100 may be 0.6 to 0.8.

[0222] In some embodiments, the inner radius r of the ring structure i The ratio of the inner radius r of the ring structure to the outer radius r may range from 0.1 to 0.8. i and outer radius r o In some embodiments, the ratio of the inner radius r of the ring structure to the inner radius r of the ring structure may be in the range of 0.3 to 0.8. i and outer radius r o The ratio may be in the range of 0.5 to 0.8.

[0223] In some embodiments, the ratio of the inner diameter of the annular structure to the radius of the crucible 100 may range from 0.1 to 0.9. In some embodiments, the ratio of the inner diameter of the annular structure to the radius of the crucible 100 may range from 0.1 to 0.8. In some embodiments, the ratio of the inner diameter of the annular structure to the radius of the crucible 100 may range from 0.3 to 0.8.

[0224] Although the basic concept has been described above, it is obvious that the above detailed disclosure is merely illustrative and does not limit the present application to those skilled in the art. Although not explicitly described herein, those skilled in the art may make various amendments, improvements and modifications to the present application. Since such amendments, improvements and modifications are proposed in the present application, such amendments, improvements and modifications still fall within the spirit and scope of the exemplary embodiments of the present application.

[0225] In addition, certain terms are used in the present application to describe the embodiments of the present application. "One embodiment," "an embodiment," and / or "some embodiments" refer to features, structures, or characteristics associated with at least one embodiment of the present application. It should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" referenced two or more times in different positions in this specification do not necessarily refer to the same embodiment. Also, some features, structures, or characteristics in one or more embodiments of the present application may be combined as appropriate.

[0226] Similarly, it should be noted that in the foregoing description of the embodiments of the present application, various features may be combined in one embodiment, drawing, or description thereof in order to simplify the presentation of the disclosure herein and to aid in the understanding of one or more embodiments of the present invention. However, this method of disclosure does not imply that the subject matter of the present application requires more features than are recited in the claims. Indeed, an embodiment may have fewer features than all of the features of a single embodiment disclosed above.

[0227] Finally, it should be understood that the embodiments described herein are merely illustrative of the principles of the present application. Other variations may fall within the scope of the present application. Thus, by way of example and not of limitation, alternative configurations of the embodiments of the present application may be considered consistent with the teachings of the present application. Thus, the embodiments of the present application are not limited to the embodiments expressly introduced and described herein.

Claims

1. A crucible including a raw material chamber for placing a raw material therein and a growth chamber in which a crystal is grown; and a heat retention device provided on at least one side outside the crucible.

2. 10. The crystal growing apparatus of claim 1, wherein the crucible comprises a top lid, the top lid comprising a lid body and a seed crystal support, the seed crystal support being removably connected to the lid body.

3. The crystal growing apparatus of claim 2 , wherein the seed crystal support includes a connection structure provided in a central region of the seed crystal support on a side adjacent to the lid body.

4. 3. The crystal growing apparatus of claim 2, wherein the seed crystal support has a thickness of 2 mm to 10 mm.

5. The crystal growing apparatus according to claim 2 , wherein the two surfaces where the seed crystal support part and the lid body come into contact include interlocking concave-convex structures.

6. The crystal growing apparatus of claim 2 , wherein the seed crystal support includes a separation groove for separating the seed crystals on the seed crystal support.

7. 7. The crystal growing apparatus according to claim 6, wherein the separation groove is a circumferential groove provided on the outer periphery on the side away from the lid body.

8. 8. The crystal growth apparatus according to claim 7, wherein a ratio of a radial depth of the circumferential groove to a radius of the seed crystal support portion is in a range of 0.028 to 0.

042.

9. 8. The crystal growth apparatus according to claim 7, wherein the radial depth of said circumferential groove is 2 mm to 4 mm, and the axial height of said circumferential groove is 0.5 mm to 1.5 mm.

10. 2. The crystal growing apparatus of claim 1, wherein the crucible includes a flow guide provided between the source chamber and the growth chamber, the flow guide including a first flow guide surface inclined toward a bottom surface of the source chamber.

11. The crystal growing apparatus according to claim 10 , wherein the flow guiding device includes a flow guiding groove, which is a recessed groove provided on an outer periphery of the flow guiding device.

12. 12. The crystal growing apparatus according to claim 11, wherein the flow guiding groove includes a second flow guiding surface parallel or substantially parallel to the first flow guiding surface, and a flow guiding wall is formed between the first flow guiding surface and the second flow guiding surface.

13. The crystal growing apparatus according to claim 12 , wherein the flow guide device further includes a support wall that connects the flow guide wall and an outer peripheral wall of the crucible along a radial direction.

14. The crystal growing apparatus according to claim 12, wherein the thickness of the flow guide wall is between 10 mm and 60 mm.

15. 13. The crystal growing apparatus according to claim 12, wherein the height of the flow guide groove is in the range of 20 mm to 40 mm.

16. 13. The crystal growing apparatus according to claim 12, wherein the ratio of the thickness of the flow guiding wall to the height of the flow guiding groove is in the range of 0.2 to 1.

5.

17. A crystal growing apparatus as claimed in claim 13, wherein the thickness of said support wall ranges from 10 mm to 60 mm.

18. 14. The crystal growing apparatus of claim 13, wherein the ratio of the thickness of the flow guide wall to the thickness of the support wall is in the range of 0.8 to 1.

2.

19. 2. The crystal growing apparatus of claim 1, further comprising a furnace chamber and a temperature measurement structure, the crucible being disposed within the furnace chamber, the temperature measurement structure comprising a temperature measurement chamber and a temperature measurement window, the temperature measurement chamber comprising a first chamber portion, a body portion and a second chamber portion, the temperature measurement window being disposed in the first chamber portion and the second chamber portion communicating with the furnace chamber.

20. 20. The crystal growing apparatus of claim 19, wherein the diameter of the body portion is smaller than the diameter of the furnace chamber.

21. 20. A crystal growing apparatus as claimed in claim 19, wherein a diameter of the first chamber portion and / or the second chamber portion is smaller than a diameter of the body portion.

22. 20. The crystal growing apparatus of claim 19, wherein the temperature measurement structure further comprises an inlet port in communication with the first chamber portion and an outlet port in communication with the second chamber portion.

23. 23. The crystal growing apparatus of claim 22, wherein the diameter of the exhaust port is smaller than the diameter of the inlet port.

24. 20. The crystal growing apparatus of claim 19, wherein the temperature measurement structure further comprises a cooler disposed in the second chamber portion.

25. 20. The crystal growing apparatus of claim 19, wherein the temperature measurement structure further comprises a deposition chamber in communication with the furnace chamber.

26. 26. The crystal growing apparatus of claim 25, wherein the temperature within the deposition chamber is lower than the temperature within the furnace chamber.

27. 20. The crystal growing apparatus of claim 19, wherein the temperature measurement structure further comprises a deposition chamber in communication with the second chamber portion.

28. 28. The crystal growing apparatus of claim 27, wherein the temperature in the deposition chamber is lower than the temperature in the furnace chamber and the temperature measurement chamber, and the pressure in the deposition chamber is lower than the pressure in the temperature measurement chamber.

29. The thermal insulation device includes a first thermal insulation assembly, the first thermal insulation assembly comprising: an inner layer having a thickness that satisfies a predetermined condition; an outer layer having a material different from that of the inner layer; 10. The crystal growing apparatus of claim 1 including an intermediate layer located between said inner layer and said outer layer.

30. 30. The crystal growing apparatus of claim 29, wherein the first thermal insulation assembly is provided at least on a periphery of the crucible.

31. 30. The crystal growing apparatus of claim 29, wherein the thickness of said inner layer ranges from 4 mm to 57 mm.

32. 30. The crystal growing apparatus of claim 29, wherein the thickness of said intermediate layer ranges from 28 mm to 143 mm.

33. 30. The crystal growing apparatus of claim 29, wherein the thickness of said intermediate layer is greater than the thickness of said inner layer and the thickness of said outer layer.

34. 30. The crystal growing apparatus of claim 29, wherein the ratio of the thickness of the inner layer to the thickness of the intermediate layer is 1:2 to 1:

10.

35. 30. The crystal growing apparatus of claim 29, wherein the ratio of the thickness of said intermediate layer to the thickness of said outer layer is from 2:0.5 to 10:

3.

36. 30. The crystal growing apparatus of claim 29, wherein the ratio of the thickness of the inner layer to the thickness of the outer layer is 1:0.5 to 1:

3.

37. 31. The crystal growing apparatus of claim 30, wherein the inner layer comprises at least two insulation sections stacked one on top of the other.

38. 31. The crystal growing apparatus of claim 30, wherein the inner layers have different axial thicknesses.

39. 30. The crystal growing apparatus of claim 29, wherein the material of the inner layer comprises graphite felt.

40. 30. The crystal growing apparatus of claim 29, wherein the material of the outer layer comprises at least one of zirconia, alumina, a carbon material, or a carbon fiber material.

41. 30. The crystal growing apparatus of claim 29, wherein graphite paper is filled between the intermediate layer and the outer layer.

42. 30. The crystal growing apparatus of claim 29, wherein the insulation apparatus further comprises a second insulation assembly disposed on top of the crystal growing apparatus.

43. 43. The crystal growing apparatus of claim 42, wherein the second heat retention layer comprises a laminate structure of the same material.

44. 43. A crystal growing apparatus as claimed in claim 42, wherein the insulation device further comprises a third insulation assembly comprising an annular or circular structure.

45. 45. The crystal growing apparatus of claim 44, wherein the annular structure has an inner diameter in the range of 10 mm to 90 mm.

46. 45. The crystal growing apparatus of claim 44, wherein the ratio of the outer diameter of the annular structure to the radius of the crucible is between 0.6 and 1.

2.

47. 45. The crystal growing apparatus of claim 44, wherein the ratio of the inner diameter to the outer diameter of the annular structure is in the range of 0.1 to 0.

8.

48. 45. The crystal growing apparatus of claim 44, wherein the ratio of the inner diameter of the annular structure to the radius of the crucible is in the range of 0.1 to 0.9.

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