Display substrate, method for manufacturing the same, and display device

Abstract

A display substrate, a manufacturing method thereof, and a display device are provided. In the display substrate, an active layer is located on a base substrate, a gate electrode insulating pattern is located on a side of the active layer away from the base substrate, and a metal conductive layer is at least partially located on a side of the gate electrode insulating pattern away from the base substrate. The gate electrode insulating pattern includes a first opening, the active layer includes a second opening, a positive projection of the second opening on the base substrate is located within a positive projection of the first opening on the base substrate, the metal conductive layer includes a main body portion and an extending portion extending into the first opening, the extending portion is electrically connected to the active layer exposed by the first opening, a conductive structure wraps around the extending portion and includes a connecting portion extending into the second opening and electrically connecting the active layers on both sides of the second opening. Thereby, the display substrate forms a stable conductive channel having a strong current transmission ability between the metal conductive layer and the active layer, thereby avoiding the occurrence of various problems.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a display substrate, a method for manufacturing the same, and a display device.

Background Art

[0002] With the continuous development of display technology, organic light-emitting diode display devices (OLEDs) have become the current research focus and technology development direction of major manufacturers due to advantages such as a wide color gamut, high contrast, a thin and lightweight design, self-emission, and a wide viewing angle.

[0003] Currently, organic light-emitting diode display devices (OLEDs) are widely used in small electronic products such as smart bracelets, smart watches, smart phones, and tablet computers, as well as large electronic products such as notebook computers, desktop computers, and televisions. Therefore, the market demand for active matrix organic light-emitting diode display devices is also increasing.

Summary of the Invention

Means for Solving the Problems

[0004] Embodiments of the present disclosure provide a display substrate, a method for manufacturing the same, and a display device. The display substrate electrically connects an active layer and a metal conductive layer located on both sides of a second opening by the conductive structure, thereby forming a stable conductive channel having a strong current transmission ability between the metal conductive layer and the active layer, thereby avoiding the occurrence of various problems.

[0005] At least one embodiment of the present disclosure provides a display substrate, comprising a base substrate, an active layer located on the base substrate, a gate electrode insulating pattern located on a side of the active layer away from the base substrate, a metal conductive layer at least partially located on a side of the gate electrode insulating layer away from the base substrate, and a conductive structure. The gate electrode insulating pattern includes a first opening, the active layer includes a second opening, a front projection of the second opening on the base substrate is located within a front projection of the first opening on the base substrate. The metal conductive layer includes a main body portion and an extending portion extending into the first opening, the extending portion is electrically connected to the active layer exposed by the first opening, the conductive structure wraps around the extending portion and includes a connecting portion extending into the second opening and electrically connecting the active layers on both sides of the second opening.

[0006] For example, in a display substrate according to an embodiment of the present disclosure, the active layer includes a first conductivized portion and a second conductivized portion, the first conductivized portion and the second conductivized portion are located on both sides of the second opening in a first direction, the connecting portion is at least partially located within the second opening and connects the first conductivized portion and the second conductivized portion.

[0007] For example, in a display substrate according to an embodiment of the present disclosure, a front projection of the conductive structure on the base substrate covers a front projection of the second opening on the base substrate, and the second opening is completely filled by the connecting portion.

[0008] For example, in a display substrate according to an embodiment of the present disclosure, the conductive structure further includes a first wrapping portion located on a side of the extending portion away from the base substrate and configured to be in direct contact with the extending portion, and a second wrapping portion located on a side of the first conductivized portion away from the base substrate and configured to be in direct contact with the first conductivized portion. The first wrapping portion, the second wrapping portion and the connecting portion are sequentially arranged and continuously arranged in the first direction.

[0009] For example, in the display substrate according to an embodiment of the present disclosure, the conductive structure further includes a third wrap portion located on a side of the second conductor portion away from the base substrate and configured to be in direct contact with the second conductor portion.

[0010] For example, in the display substrate according to an embodiment of the present disclosure, the conductive structure further includes a fourth wrap portion located on a side of the main body portion of the metal conductive layer away from the base substrate, and a positive projection of the fourth wrap portion on the base substrate is located outside a positive projection of the first opening on the base substrate.

[0011] For example, in the display substrate according to an embodiment of the present disclosure, a value range of a sum of a first size of the third wrap portion in the first direction and a second size of the fourth wrap portion in the first direction is 0.5 to 1.5 microns.

[0012] For example, in the display substrate according to an embodiment of the present disclosure, the first size of the third wrap portion in the first direction or the second size of the fourth wrap portion in the first direction is smaller than a size of the second opening in the first direction.

[0013] For example, in the display substrate according to an embodiment of the present disclosure, the first size of the third wrap portion in the first direction or the second size of the fourth wrap portion in the first direction is smaller than a size of the first conductor portion in the first direction.

[0014] For example, in the display substrate according to an embodiment of the present disclosure, the size of the first conductor portion in the first direction is smaller than the size of the second opening in the first direction.

[0015] For example, in the display substrate according to an embodiment of the present disclosure, the size of the conductive structure in the first direction is smaller than the size of the second conductor portion in the first direction.

[0016] For example, in the display substrate according to an embodiment of the present disclosure, the metal conductive layer includes a drain electrode and a gate electrode, the drain electrode and the gate electrode are located on both sides in the first direction of the second opening, the drain electrode is configured to be in partial contact with the first conducting portion, the active layer further includes a channel located on the side away from the second opening of the second conducting portion, and the orthographic projection of the gate electrode on the base substrate overlaps with the orthographic projection of the channel on the base substrate.

[0017] For example, in the display substrate according to an embodiment of the present disclosure, the size of the conductive structure in the first direction is smaller than the size of the channel in the first direction.

[0018] For example, in the display substrate according to an embodiment of the present disclosure, the size of the contact region between the drain electrode and the first conducting portion in the first direction is larger than the size of the contact region between the conductive structure and the active layer in the first direction.

[0019] For example, in the display substrate according to an embodiment of the present disclosure, the material of the conductive structure includes a transparent conductive oxide.

[0020] For example, in the display substrate according to an embodiment of the present disclosure, the thickness of the conductive structure in the second direction perpendicular to the base substrate is larger than the thickness of the active layer in the second direction.

[0021] For example, the display substrate according to an embodiment of the present disclosure further includes a buffer layer located on the side of the active layer close to the base substrate, and a conductive light-shielding layer located between the buffer layer and the base substrate.

[0022] At least one embodiment of the present disclosure further provides a display device including the display substrate according to any one of the above items.

[0023] At least one embodiment of the present disclosure further provides a method for manufacturing a display substrate, comprising the steps of: sequentially forming an active material layer and a gate electrode insulating layer on a base substrate; patterning the gate electrode insulating layer to form a first gate electrode insulating pattern including an insulating layer opening; performing a first conductorization process on the active material layer by using the insulating layer opening; forming a metal material layer on a side of the first gate electrode insulating pattern away from the base substrate; forming a first photoresist pattern including a mask opening, and patterning the metal material layer by using the first photoresist pattern to form a metal conductive layer; patterning the first gate electrode insulating pattern by using the first photoresist pattern, further removing a part of the first gate electrode insulating pattern to form a second gate electrode insulating pattern, wherein the second gate electrode insulating pattern includes a first opening; performing a second conductorization process on the active material layer by using the first photoresist pattern, and partially removing the active material layer in the patterning process of the second gate electrode insulating pattern and the second conductorization process to form an active layer, wherein the active layer includes a second opening; forming a conductive structure on a side of the metal conductive layer away from the base substrate; wherein a front projection of the second opening on the base substrate is located within a front projection of the first opening on the base substrate, the metal conductive layer includes a main body portion and an extending portion extending into the first opening, the extending portion is electrically connected to the active layer exposed by the first opening, the conductive structure is wrapped around the extending portion, and includes a connecting portion extending into the second opening and electrically connecting the active layers on both sides of the second opening.

[0024] For example, in the method for manufacturing a display substrate according to an embodiment of the present disclosure, the step of forming a conductive structure on the side of the metal conductive layer away from the base substrate includes removing the first photoresist pattern and forming a second photoresist pattern on the side of the metal conductive layer away from the base substrate; forming a conductive layer on the side of the second photoresist pattern away from the base substrate; and peeling the second photoresist pattern and also peeling the conductive layer on the second photoresist pattern, and the remaining conductive layer forms the conductive structure.

[0025] For example, in the method for manufacturing a display substrate according to an embodiment of the present disclosure, the step of patterning the gate electrode insulating layer to form the first gate electrode insulating pattern including the insulating layer opening includes forming a third photoresist pattern on the side of the gate electrode insulating layer away from the base substrate using a first mask plate; and patterning the gate electrode insulating layer using the third photoresist pattern to form the first gate electrode insulating pattern.

[0026] For example, in the method for manufacturing a display substrate according to an embodiment of the present disclosure, the step of forming the second photoresist pattern on the side of the metal conductive layer away from the base substrate includes forming the second photoresist pattern on the side of the metal conductive layer away from the base substrate using the first mask plate.

[0027] For example, in the method for manufacturing a display substrate according to an embodiment of the present disclosure, the overlapping portion of the orthographic projection of the insulating layer opening on the base substrate and the orthographic projection of the mask opening on the base substrate substantially overlaps with the orthographic projection of the second opening on the base substrate.

[0028] For example, in the method for manufacturing a display substrate according to an embodiment of the present disclosure, the active layer includes a first conductor portion and a second conductor portion. The first conductor portion and the second conductor portion are located on both sides of the second opening in the first direction, and the connection portion is at least partially located in the second opening and connects the first conductor portion and the second conductor portion.

[0029] For example, in the method for manufacturing a display substrate according to an embodiment of the present disclosure, the orthographic projection of the conductive structure on the base substrate covers the orthographic projection of the second opening on the base substrate, and the second opening is completely filled by the connection portion.

[0030] To more clearly explain the technical solution means of the embodiments of the present disclosure, the drawings of the embodiments are briefly introduced below. Obviously, the drawings in the following description are only related to some embodiments of the present disclosure and are not intended to limit the present invention.

Brief Description of the Drawings

[0031]

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DETAILED DESCRIPTION OF THE INVENTION

[0032] In order to make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. All other embodiments that can be obtained by those skilled in the art based on the described embodiments of the present disclosure without creative labor shall fall within the protection scope of the present disclosure.

[0033] Unless otherwise defined, technical or scientific terms used in this disclosure should have the ordinary meaning as understood by those skilled in the art of this disclosure. As used in this disclosure, terms such as "first", "second" and similar terms do not indicate any order, quantity or importance, and are only used to distinguish different components. Terms such as "comprising" or "including" mean that the elements or elements indicated before the term cover the elements or elements listed after the term and their equivalents, but do not exclude other elements or elements. Similar terms such as "connected" or "coupled" are not limited to physical or mechanical connections, but include direct or indirect electrical connections.

[0034] An organic light-emitting diode (OLED) display device usually includes a display substrate provided with a driving circuit and a light-emitting element, and the driving circuit on the display substrate can drive the light-emitting element to perform light-emitting display. In a manufacturing method of a display substrate, since the active material layer is subjected to two etching processes, a part of the active material layer is missing, and various problems occur.

[0035] Figures 1 to 3 are schematic diagrams showing the steps of a manufacturing method of a display substrate. Figure 4 is a partial plan view of the display substrate shown in Figure 1. Figure 5 is a partial plan view of the display substrate shown in Figure 2. Figure 6 is a partial plan view of the display substrate shown in Figure 3.

[0036] As shown in FIG. 1, an active material layer 11 and a gate electrode insulating layer 12 are formed on a base substrate 10. By performing an etching process on the gate electrode insulating layer 12, an opening 12A is formed in the gate electrode insulating layer 12. Next, the exposed active material layer 11 can be made conductive using the formed opening 12A. In this process, a single etching process and a single conductivity-imparting process are performed on the portion of the active material layer 11 exposed by the opening 12A. In this case, as shown in FIG. 4, a conductivity-imparting process is performed on the active material layer 11 exposed by the opening 12A. However, the above etching process is an etching process for the gate electrode insulating layer (for example, a dry etching process), not for the active material layer, but it causes certain damage to the exposed active material layer 11.

[0037] As shown in FIG. 2, a metal material layer 13 is formed on the display substrate shown in FIG. 1. A photoresist pattern 21 is formed on the metal material layer 13, and the metal material layer 13 is etched using the photoresist pattern 21, thereby forming an opening 13A in the metal material layer 13. In this case, as shown in FIG. 5, the metal conductive layer (for example, a gate electrode or a gate line) formed on the metal material layer 13 wraps around a part of the active material layer 11, but the region outside the metal conductive layer corresponds to the region of the opening 13A.

[0038] As shown in FIG. 3, the photoresist pattern 21 is retained, and an etching process is performed on the gate electrode insulating layer 12 using the photoresist pattern 21, whereby the opening 12A is expanded to the opening 12B, and the active material layer 11 exposed using the opening 12B is made conductive. In this process, in the overlapping region between the opening 12A and the opening 13A, the active material layer 11 is subjected to two etching processes and two conductive processes, so that a defect (the portion indicated by the notch 11A) occurs. In this case, as shown in FIG. 6, in the process of etching the gate electrode insulating layer 12 using the photoresist pattern 21, a defect (the portion shown by the notch 11A) occurs in the active material layer 11, and the conductive channel formed by the lap of the conductive active material layer and the metal conductive layer is very narrow (for example, the width is 0.7 microns or less). In this case, the transmission of current and electrical signals from the metal conductive layer to the active material layer is restricted, and problems such as signal delay, chip discharge, and short circuit are likely to occur. The arrow in FIG. 6 indicates the direction of current transmission.

[0039] Therefore, in order to avoid the occurrence of the above problems, embodiments of the present disclosure provide a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a base substrate, an active layer, a gate electrode insulating pattern, a metal conductive layer, and a conductive structure. The active layer is located on the base substrate, the gate electrode insulating pattern is located on the side away from the base substrate of the active layer, and the metal conductive layer is at least partially located on the side away from the base substrate of the gate electrode insulating pattern. The gate electrode insulating pattern includes a first opening, the active layer includes a second opening, a positive projection of the second opening on the base substrate is located within a positive projection of the first opening on the base substrate, the metal conductive layer includes a main body portion and an extending portion extending into the first opening, the extending portion is electrically connected to the active layer exposed by the first opening, the conductive structure includes a connecting portion that wraps around the extending portion, extends into the second opening, and electrically connects the active layers on both sides of the second opening. Thereby, the display substrate electrically connects the active layers located on both sides of the second opening and the metal conductive layer through the conductive structure, thereby forming a stable conductive channel with strong current transmission ability between the metal conductive layer and the active layer, thereby avoiding the occurrence of various problems.

[0040] Hereinafter, the display substrate, the manufacturing method thereof, and the display device according to the embodiments of the present disclosure will be described in detail with reference to the drawings.

[0041] An embodiment of the present disclosure provides a display substrate. FIG. 7 is a schematic cross-sectional view of a display substrate according to an embodiment of the present disclosure. FIG. 8 is a partial plan view of a display substrate according to an embodiment of the present disclosure.

[0042] As shown in FIG. 7, the display substrate 100 includes a base substrate 110, an active layer 120, a gate electrode insulating pattern 130, a metal conductive layer 140, and a conductive structure 150. The active layer 120 is located on the base substrate 110, the gate electrode insulating pattern 130 is located on the side of the active layer 120 away from the base substrate 110, and the metal conductive layer 140 is at least partially located on the side of the gate electrode insulating pattern 130 away from the base substrate 110. The gate electrode insulating pattern 130 includes a first opening 130A, the active layer 120 includes a second opening 120A, and the orthographic projection of the second opening 120A on the base substrate 110 is located within the orthographic projection of the first opening 130A on the base substrate 110. The metal conductive layer 140 includes a main body portion 142 and an extending portion 144 extending into the first opening 130A. The extending portion 144 is electrically connected to the active layer 120 exposed by the first opening 130A. The conductive structure 150 wraps around the extending portion 144 and includes a connecting portion 156 that extends into the second opening 120A and electrically connects the active layers 120 on both sides of the second opening 120A. It should be noted that the second opening 120A corresponds to the portion where the active material layer on the display substrate shown in FIGS. 3 and 6 is missing. Also, the active layer 120 exposed by the first opening 130A is a semiconductor material that has been made conductive and can conduct electricity.

[0043] In the display substrate according to the embodiment of the present disclosure, the conductive structure wraps around the extending portion, extends into the second opening, and includes a connecting portion that electrically connects the active layers located on both sides of the second opening. Therefore, the display substrate electrically connects the active layers located on both sides of the second opening and the metal conductive layer through the conductive structure, thereby forming a stable conductive channel with strong current transmission ability between the metal conductive layer and the active layer, thereby avoiding the occurrence of various problems.

[0044] As shown in FIG. 8, compared with the display substrate shown in FIG. 6, current or electrical signals are transmitted through the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer. And since the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer has a wide width, it has low resistance and high stability.

[0045] For example, the metal conductive layer may be a gate electrode layer in the array substrate.

[0046] In some examples, as shown in FIGS. 7 and 8, the extending portion 144 is an extending portion with respect to the first opening 130A, and is not necessarily a protruding portion extending from the metal conductive layer 140. Further, after forming the first opening 130A, a conductor formation process can be performed on the active layer 120 using the first opening 130A, whereby the active layer 120 exposed by the first opening 130A has conductivity. Note that the conductor formation process may include a doping process.

[0047] In some examples, as shown in FIG. 7, the active layer 120 includes a first conductor formation portion 121 and a second conductor formation portion 122, the first conductor formation portion 121 and the second conductor formation portion 122 are located on both sides in the first direction of the second opening 120A, and the connection portion 156 is at least partially located within the second opening 120A and connects the first conductor formation portion 121 and the second conductor formation portion 122. Note that the first direction may be a direction parallel to the base substrate. Therefore, the connection portion can compensate for the missing portion of the active layer in the second opening and electrically connect the first conductor formation portion and the second conductor formation portion.

[0048] In some examples, as shown in FIG. 7, the orthographic projection of the conductive structure 150 on the base substrate 110 covers the orthographic projection of the second opening 120A on the base substrate 110, and the second opening 120A is completely filled by the connection portion 156. That is, the connection portion 156 not only connects the first conductor formation portion 121 and the second conductor formation portion 122 located on both sides of the second opening 120A, but also completely fills the second opening 120A.

[0049] In some examples, as shown in FIG. 7, the conductive structure 150 further includes a first wrapping portion 151 and a second wrapping portion 152. The first wrapping portion 151 is located on the side away from the base substrate 110 of the extending portion 144 and is configured to be in direct contact with the extending portion 144. The second wrapping portion 152 is located on the side away from the base substrate 110 of the first conducting portion 121 and is configured to be in direct contact with the first conducting portion 121. The first wrapping portion 151, the second wrapping portion 152, and the connecting portion 156 are sequentially arranged and continuously arranged in the first direction. Thereby, the conductive structure is electrically connected to the extending portion and the first conducting portion by the first wrapping portion and the second wrapping portion respectively, thereby further improving the current transmission capacity of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0050] In some examples, as shown in FIG. 7, the conductive structure 150 can be etched with a mask plate of the gate electrode insulating pattern 130, thereby eliminating the need to add a mask process and reducing costs. In this case, the conductive structure 150 only needs to include the first wrapping portion 151, the second wrapping portion 152, and the connecting portion 156, thereby reducing costs and improving the current transmission capacity of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0051] In some examples, as shown in FIG. 7, the conductive structure 150 further includes a third wrapping portion 153 that is located on the side away from the base substrate 110 of the second conducting portion 122 and is configured to be in direct contact with the second conducting portion 122. The third wrapping portion can further improve the current transmission capacity of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0052] In some examples, as shown in FIG. 7, the conductive structure 150 further includes a fourth wrap portion 154 located on the side away from the base substrate 110 of the main body portion 142 of the metal conductive layer 140, and the orthographic projection of the fourth wrap portion 154 on the base substrate 110 is located outside the orthographic projection of the first opening 130A on the base substrate 110. The fourth wrap portion can further improve the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0053] In some examples, as shown in FIG. 7, the range of the sum of the first size D1 of the third wrap portion 153 in the first direction and the second size D2 of the fourth wrap portion 154 in the first direction is 0.5 to 1.5 microns. Thereby, the third wrap portion and the fourth wrap portion can effectively improve the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0054] In some examples, as shown in FIG. 7, the first size D1 of the third wrap portion 153 in the first direction or the second size D2 of the fourth wrap portion 154 in the first direction is smaller than the size of the second opening 120A in the first direction.

[0055] In some examples, as shown in FIG. 7, the first size D1 of the third wrap portion 153 in the first direction or the second size D2 of the fourth wrap portion 154 in the first direction is smaller than the size of the first conducting portion 121 in the first direction.

[0056] In some examples, as shown in FIG. 7, the size of the first conducting portion 121 in the first direction is smaller than the size of the second opening 120A in the first direction.

[0057] In some examples, as shown in FIG. 7, the size of the conductive structure 150 in the first direction is smaller than the size of the second conducting portion 122 in the first direction.

[0058] In some examples, as shown in FIG. 7, the metal conductive layer 140 includes a drain electrode 146 and a gate electrode 148. The drain electrode 146 and the gate electrode 148 are located on both sides of the second opening 120A in the first direction. The drain electrode 146 is configured to be in partial contact with the first conducting portion 121. The active layer 120 further includes a channel 120C located on the side away from the second opening 120A of the second conducting portion 122. The orthographic projection of the gate electrode 148 on the base substrate 110 overlaps with the orthographic projection of the channel 148 on the base substrate 110. Note that the drain electrode 146 may include the main body portion 142 and an extending portion 144 extending into the first opening 130A.

[0059] In some examples, as shown in FIG. 7, the size of the conductive structure 150 in the first direction is smaller than the size of the channel 120C in the first direction.

[0060] In some examples, as shown in FIG. 7, the size of the contact region between the drain electrode 146 and the first conducting portion 121 in the first direction is larger than the size of the contact region between the conductive structure 150 and the active layer 120 in the first direction. In some examples, as shown in FIG. 7, the thickness of the conductive structure 150 in the second direction perpendicular to the base substrate 110 is larger than the thickness of the active layer 120 in the second direction. Therefore, the thicker conductive structure can reduce the resistance of the conductive structure, thereby further improving the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer. On the other hand, the thicker conductive structure can avoid damage at the edge of the first opening, thereby obtaining a more stable electrical connection.

[0061] In some examples, as shown in FIG. 7, the display substrate 100 further includes a buffer layer 170 and a conductive light-shielding layer 180. The buffer layer 170 is located on the side of the active layer 120 close to the base substrate 110. The conductive light-shielding layer 180 is located between the buffer layer 170 and the base substrate 110. Thereby, when the active layer is etched and damaged, the buffer layer can play a role in protecting the conductive light-shielding layer.

[0062] In some examples, the material of the conductive structure 150 includes a transparent conductive oxide such as indium tin oxide (ITO). Of course, the embodiments of the present disclosure include this but are not limited thereto, and other conductive materials may be adopted for the conductive structure.

[0063] In some examples, the material of the active layer 120 includes an oxide semiconductor such as indium gallium zinc oxide (IGZO). Of course, the embodiments of the present disclosure include this but are not limited thereto, and other semiconductor materials may be adopted for the active layer.

[0064] At least one embodiment of the present disclosure further provides a method for manufacturing a display substrate. FIG. 9 is a schematic flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure. As shown in FIG. 9, the method for manufacturing the display substrate includes steps S101 to S106.

[0065] Step S101: An active material layer and a gate electrode insulating layer are sequentially formed on a base substrate, and the gate electrode insulating layer is patterned to form a first gate electrode insulating pattern including an insulating layer opening.

[0066] For example, the base substrate may be a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate. Of course, the embodiments of the present disclosure include these but are not limited thereto, and the base substrate may also be a silicon-based semiconductor substrate.

[0067] For example, the material of the gate electrode insulating layer may be one or more of silicon oxide, silicon nitride, and silicon oxynitride.

[0068] For example, the active material layer may be an oxide semiconductor such as indium gallium zinc oxide (IGZO). Of course, the embodiments of the present disclosure include this but are not limited thereto, and other semiconductor materials may be adopted for the active material layer.

[0069] Step S102: Using the insulating layer opening, a first conductorization process is performed on the active material layer.

[0070] For example, the first conductor formation process may be a doping process, thereby making the active material layer conductive.

[0071] Step S103: Form a metal material layer on the side of the first gate electrode insulating pattern away from the base substrate.

[0072] For example, the material of the metal material layer may be a conductive metal material such as molybdenum, aluminum, silver, copper, gold, etc. Of course, the embodiments of the present disclosure include these but are not limited thereto. In addition, the metal material layer may be the metal material layer for forming the gate electrode layer of the array substrate.

[0073] Step S104: Form a first photoresist pattern including a mask opening, and pattern the metal material layer using the first photoresist pattern to form a metal conductive layer. For example, the metal conductive layer may be a gate electrode layer.

[0074] For example, the first photoresist pattern is first formed by coating a photoresist material and then exposing and developing it with a mask plate. Of course, the embodiments of the present disclosure include this but are not limited thereto, and the first photoresist pattern may be formed by other methods.

[0075] Step S105: Pattern the first gate electrode insulating pattern using the first photoresist pattern, further remove a part of the first gate electrode insulating pattern, form a second gate electrode insulating pattern, and the second gate electrode insulating pattern includes a first opening. For example, the patterning process may include an etching process such as a dry etching process or a plasma bombardment. Of course, the embodiments of the present disclosure include these but are not limited thereto.

[0076] Step S106: Using the first photoresist pattern, perform a second conductor formation process on the active material layer, and partially remove the active material layer in the patterning process of the second gate electrode insulating pattern and the second conductor formation process to form an active layer, where the active layer includes a second opening.

[0077] For example, the second conductor formation process may similarly be a doping process.

[0078] Step S107: Form a conductive structure on the side of the metal conductive layer away from the base substrate. The orthographic projection of the second opening on the base substrate is located within the orthographic projection of the first opening on the base substrate. The metal conductive layer includes a main body portion and an extending portion extending into the first opening. The extending portion is electrically connected to the active layer exposed by the first opening. The conductive structure includes a connecting portion that wraps around the extending portion, extends into the second opening, and electrically connects the active layers on both sides of the second opening.

[0079] In the manufacturing method of the display substrate according to the embodiments of the present disclosure, the conductive structure includes a connecting portion that wraps around the extending portion, extends into the second opening, and electrically connects the active layers located on both sides of the second opening. Therefore, the display substrate electrically connects the active layers located on both sides of the second opening and the metal conductive layer through the conductive structure, thereby forming a stable conductive channel with strong current transmission ability between the metal conductive layer and the active layer, thereby avoiding the occurrence of various problems. The above beneficial effects can be referred to the related description in FIG. 8, and detailed description is omitted here.

[0080] In some examples, the conductive structure can be manufactured using the mask plate for forming the first gate electrode insulating pattern, thereby saving the mask plate. Of course, the embodiments of the present disclosure include this but are not limited thereto.

[0081] At least one embodiment of the present disclosure further provides a method for manufacturing a display substrate. FIG. 10 is a schematic flowchart of another method for manufacturing a display substrate according to an embodiment of the present disclosure. FIGS. 11 to 19 are schematic diagrams showing steps of a method for manufacturing a display substrate according to an embodiment of the present disclosure.

[0082] As shown in FIG. 10, the method for manufacturing the display substrate includes steps S201 to S209.

[0083] Step S201: A active material layer and a gate electrode insulating layer are sequentially formed on a base substrate, and the gate electrode insulating layer is patterned to form a first gate electrode insulating pattern including an insulating layer opening.

[0084] As shown in FIG. 11, an active material layer 1200 and a first gate electrode insulating pattern 1301 are formed on a base substrate 110, and the first gate electrode insulating pattern 1301 includes an insulating layer opening 130B. It should be noted that the difference between the active material layer and the active layer is that no etching and conductorization process is performed on the active material layer.

[0085] Step S202: A first conductorization process is performed on the active material layer by using the insulating layer opening, whereby the portion of the active material layer exposed by the insulating layer opening is conductorized, that is, has conductivity. It should be noted that the main body material of the active material layer is a semiconductor material and can become conductive after the conductorization process.

[0086] As shown in FIG. 12, a first conductorization process (for example, a doping process) is performed on the active material layer 1200 by using the insulating layer opening 130B, whereby the portion of the active material layer 1200 exposed by the insulating layer opening 130B has conductivity.

[0087] Step S203: A metal material layer is formed on the side of the first gate electrode insulating pattern away from the base substrate. It should be noted that the difference between the metal material layer and the metal conductive layer is that no patterning process is performed on the metal material layer.

[0088] As shown in FIG. 13, a metal material layer 1400 is formed on the side of the first gate electrode insulating pattern 1301 away from the base substrate 110. In this case, the metal material layer 1400 is configured to contact the active material layer 1200 exposed by the insulating layer opening 130B.

[0089] Step S204: Form a first photoresist pattern including a mask opening, and pattern the metal material layer using the first photoresist pattern to form a metal conductive layer.

[0090] As shown in FIG. 14, a first photoresist pattern 210 is formed on the side of the metal material layer 1400 away from the base substrate 110. The first photoresist pattern 210 includes a mask opening 215. The metal material layer 1400 is patterned using the first photoresist pattern 210, and a metal conductive layer 140 is formed. In this case, the metal conductive layer 140 is the same as the metal conductive layer in the embodiment of the display substrate described above. Note that since the metal conductive layer is formed by a wet etching process, the size of the opening in the metal conductive layer is larger than the size of the mask opening.

[0091] Step S205: Pattern the first gate electrode insulating pattern using the first photoresist pattern, further remove a part of the first gate electrode insulating pattern, form a second gate electrode insulating pattern, and the second gate electrode insulating pattern includes a first opening.

[0092] As shown in FIG. 15, the first gate electrode insulating pattern 1301 is patterned using the first photoresist pattern 210, and a part of the first gate electrode insulating pattern 1301 is further removed to form a second gate electrode insulating pattern 130. The second gate electrode insulating pattern 130 includes a first opening 130A. The first opening 130A is obtained by expanding based on the insulating layer 130B. Therefore, the first opening 130A is larger than the insulating layer opening 130B described above.

[0093] Step S206: Using the first photoresist pattern, perform a second conductor formation process on the active material layer, and partially remove the active material layer in the patterning process of the second gate electrode insulating pattern and the second conductor formation process to form an active layer, where the active layer includes a second opening.

[0094] As shown in FIG. 16, using the first photoresist pattern 210, perform a second conductor formation process on the active material layer 1200, and conductify the active material layer 1200 exposed by the mask opening 215. In this case, since there is an overlapping region between the mask opening 215 and the insulating layer opening 130B, the active material layer 1200 located in the overlapping region undergoes two patterning processes and two conductor formation processes, so defects are likely to occur, thereby forming the second opening 120A. However, the second opening may be formed in the process of patterning the first gate electrode insulating pattern, or the second opening may be formed after performing the second conductor formation process on the active material layer.

[0095] Step S207: Remove the first photoresist pattern and form a second photoresist pattern on the side away from the base substrate of the metal conductive layer.

[0096] As shown in FIG. 17, remove the first photoresist pattern 210 and form a second photoresist pattern 220 on the side away from the base substrate 110 of the metal conductive layer 140.

[0097] Step S208: Form a metal conductive layer on the side away from the base substrate of the second photoresist pattern. Here, it should be noted that the difference between the metal conductive layer and the conductive structure is that no patterning process is performed on the metal conductive layer, while the conductive structure is formed after performing a patterning process on the metal conductive layer.

[0098] As shown in FIG. 18, form a conductive layer 1500 on the side away from the base substrate 110 of the second photoresist pattern 220.

[0099] Step S209: Remove the second photoresist pattern and also remove the conductive layer on the second photoresist pattern. The remaining conductive layer forms a conductive structure. The orthographic projection of the base substrate in the second opening is located within the orthographic projection of the base substrate in the first opening. The metal conductive layer includes a main body portion and an extension portion extending into the first opening. The extension portion is electrically connected to the active layer exposed by the first opening. The conductive structure is wrapped around the extension portion and includes a connection portion that extends into the second opening and electrically connects the active layers on both sides of the second opening.

[0100] As shown in FIG. 19, remove the second photoresist pattern 220 and also remove the conductive layer 1500 on the second photoresist pattern 220. The remaining conductive layer 1500 forms a conductive structure 150. In this case, the orthographic projection of the base substrate 110 in the second opening 120A is located within the orthographic projection of the base substrate 110 in the first opening 130A. The metal conductive layer 140 includes a main body portion 142 and an extension portion 144 extending into the first opening 130A. The extension portion 144 is electrically connected to the active layer 120 exposed by the first opening 130A. The conductive structure 150 is wrapped around the extension portion 144 and includes a connection portion 152 that extends into the second opening 120A and electrically connects the active layers 120 on both sides of the second opening 120A.

[0101] In the manufacturing method of the display substrate according to the embodiment of the present disclosure, the conductive structure is wrapped around the extension portion and includes a connection portion that extends into the second opening and electrically connects the active layers located on both sides of the second opening. Therefore, the display substrate electrically connects the active layers located on both sides of the second opening and the metal conductive layer through the conductive structure, thereby forming a stable conductive channel having a strong current transmission ability between the metal conductive layer and the active layer, thereby avoiding the occurrence of various problems. The above beneficial effects can be referred to the related description in FIG. 8, and the detailed description is omitted here.

[0102] In addition, since the conductive structure is formed by a method of peeling the second photoresist pattern without using an etching process, the cost can be further reduced, and the formed display substrate can be protected from the influence of the etching process. Of course, the embodiments of the present disclosure include this but are not limited thereto. First, a conductive layer may be formed, then the second photoresist pattern may be formed, and finally, the conductive layer may be formed into the conductive structure by an etching process using the second photoresist pattern.

[0103] In some examples, as shown in FIG. 19, in the display substrate formed by the manufacturing method of the display substrate, the active layer 120 includes a first conductive portion 121 and a second conductive portion 122. The first conductive portion 121 and the second conductive portion 122 are located on both sides of the second opening 120A in the first direction, and the connection portion 156 is at least partially located in the second opening 120A and connects the first conductive portion 121 and the second conductive portion 122. Note that the first direction may be a direction parallel to the base substrate. Thereby, the connection portion can compensate for the defective portion of the active layer in the second opening and electrically connect the first conductive portion and the second conductive portion.

[0104] In some examples, in the manufacturing method of the display substrate, the steps of sequentially forming an active material layer and a first gate electrode insulating pattern on the base substrate include the steps of sequentially forming an active material layer and a gate electrode insulating layer on the base substrate, and patterning the gate electrode insulating layer using a first mask plate to form the first gate electrode insulating pattern.

[0105] In some examples, in the manufacturing method of the display substrate, the step of forming a second photoresist pattern on the side of the metal conductive layer away from the base substrate includes the step of forming a second photoresist pattern on the side of the metal conductive layer away from the base substrate using a first mask plate. Therefore, the second photoresist pattern and the third photoresist pattern are manufactured using the same mask plate, that is, the conductive structure and the first gate electrode insulating pattern are manufactured using the same mask plate, thereby reducing the cost.

[0106] In some examples, as shown in FIG. 19, the step of forming the second photoresist pattern on the side of the metal conductive layer away from the base substrate using the first mask plate includes the step of controlling the exposure amount so that the size of the second photoresist pattern is smaller than the size of the third photoresist pattern. Thereby, although the first mask plate is used to form the second photoresist pattern, by controlling the exposure amount (for example, increasing the exposure amount), the size of the second photoresist pattern can be made smaller than the size of the third photoresist pattern, whereby the size of the finally formed conductive structure becomes larger than the size of the insulating layer opening (for example, the third wrap portion and the fourth wrap portion can be formed).

[0107] In some examples, in the method for manufacturing the display substrate, the overlapping portion of the orthographic projection of the insulating layer opening on the base substrate and the orthographic projection of the mask opening on the base substrate substantially overlaps with the orthographic projection of the second opening on the base substrate.

[0108] In some examples, as shown in FIG. 19, in the display substrate formed by the method for manufacturing the display substrate, the orthographic projection of the conductive structure 150 on the base substrate 110 covers the orthographic projection of the second opening 120A on the base substrate 110, and the second opening 120A is completely filled by the connection portion 156. That is, the connection portion 156 not only connects the first conductivized portion 121 and the second conductivized portion 122 located on both sides of the second opening 120A, but also completely fills the second opening 120A.

[0109] In some examples, as shown in FIG. 19, in the display substrate formed by the method for manufacturing the display substrate, the conductive structure 150 further includes a first wrapping portion 151 and a second wrapping portion 152. The first wrapping portion 151 is located on the side away from the base substrate 110 of the extending portion 144 and is configured to be in direct contact with the extending portion 144. The second wrapping portion 152 is located on the side away from the base substrate 110 of the first conducting portion 121 and is configured to be in direct contact with the first conducting portion 121. The first wrapping portion 151, the second wrapping portion 152, and the connecting portion 156 are sequentially arranged and continuously arranged in the first direction. Thereby, the conductive structure is electrically connected to the extending portion and the first conducting portion by the first wrapping portion and the second wrapping portion respectively, thereby further improving the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0110] In some examples, as shown in FIG. 19, in the display substrate formed by the method for manufacturing the display substrate, the conductive structure 150 can be etched with the mask plate of the gate electrode insulating pattern 130, thereby eliminating the need to add a mask process and thereby reducing costs. In this case, the conductive structure 150 only needs to include the first wrapping portion 151, the second wrapping portion 152, and the connecting portion 156, thereby reducing costs and improving the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0111] In some examples, as shown in FIG. 19, in the display substrate formed by the manufacturing method of the display substrate, the conductive structure 150 is located on the side away from the base substrate 110 of the second conductor portion 122 and further includes a third wrap portion 153 configured to be in direct contact with the second conductor portion 122. Since the conductive structure is formed by a peeling process, the formed conductive structure may include the third wrap portion. The third wrap portion can further improve the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer. However, when patterning the conductive structure with the first mask plate, the exposure amount can be controlled so that the size of the second photoresist pattern is smaller than the size of the third photoresist pattern. Thereby, although the first mask plate is used to form the second photoresist pattern, by controlling the exposure amount (for example, increasing the exposure amount), the size of the second photoresist pattern can be made smaller than the size of the third photoresist pattern, whereby the finally formed conductive structure includes the third wrap portion.

[0112] In some examples, as shown in FIG. 19, in the display substrate formed by the method for manufacturing the display substrate, the conductive structure 150 further includes a fourth wrap portion 154 located on the side away from the base substrate 110 of the main body portion 142 of the metal conductive layer 140, and the orthographic projection of the fourth wrap portion 154 on the base substrate 110 is located outside the orthographic projection of the first opening 130A on the base substrate 110. Since the conductive structure is formed by a peeling process, the formed conductive structure includes the fourth wrap portion. The fourth wrap portion can further improve the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer. However, when patterning the conductive structure with the first mask plate, the exposure amount can be controlled so that the size of the second photoresist pattern is smaller than the size of the third photoresist pattern. Thereby, although the first mask plate is used to form the second photoresist pattern, by controlling the exposure amount (for example, increasing the exposure amount), the size of the second photoresist pattern can be made smaller than the size of the third photoresist pattern, and thereby, the finally formed conductive structure includes the third wrap portion and the fourth wrap portion.

[0113] In some examples, as shown in FIG. 19, in the display substrate formed by the method for manufacturing the display substrate, the range of the sum of the first size D1 of the third wrap portion 153 in the first direction and the second size D2 of the fourth wrap portion 154 in the first direction is 0.5 to 1.5 microns. Thereby, the third wrap portion and the fourth wrap portion can effectively improve the current transmission ability of the conductive channel formed by the metal conductive layer, the conductive structure, and the active layer.

[0114] Note that in the embodiments of the present disclosure, since the conductive structure can be manufactured with a transparent conductive oxide material, the conductive structure can also be manufactured with the same mask plate as the anode. For example, after forming the metal conductive layer, an insulating layer such as a protective layer and a planar layer including an opening exposing the second opening can be formed, and then the conductive structure and the anode can be formed in a single mask process.

[0115] One embodiment of the present disclosure further provides a display device. FIG. 20 is a schematic diagram of a display device according to an embodiment of the present disclosure. As shown in FIG. 20, the display device 300 includes the display substrate 100. Thereby, the display device has a stable conductive channel with strong current transmission ability between the metal conductive layer and the active layer, thereby avoiding the occurrence of various problems.

[0116] For example, in some examples, the display device may be any product or component having a display function, such as a smartphone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc.

[0117] The following points need to be explained.

[0118] (1) The drawings of the embodiments of the present disclosure relate only to the structures according to the embodiments of the present disclosure, and other structures can refer to the normal design.

[0119] (2) The features of the same embodiment and different embodiments of the present disclosure can be combined with each other as long as there is no conflict.

[0120] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present disclosure should belong to the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be in accordance with the protection scope of the claims.

Description of Reference Numerals

[0121] 100 Display substrate 110 Base substrate 120 Active layer 120A Second opening 130 Gate electrode insulating pattern 130A First opening 140 Metal conductive layer 142 Body part 144 Extension part 150 Conductive structure 156 Connection part

Claims

1. A display substrate, comprising: a base substrate; an active layer located on the base substrate; a gate electrode insulating pattern located on a side of the active layer away from the base substrate; a metal conductive layer at least partially located on a side of the gate electrode insulating layer away from the base substrate; and a conductive structure. The gate electrode insulating pattern includes a first opening, the active layer includes a second opening, and a front projection of the second opening on the base substrate is located within a front projection of the first opening on the base substrate. The metal conductive layer includes a main body portion and an extending portion extending into the first opening, and the extending portion is electrically connected to the active layer exposed by the first opening. The conductive structure includes a connecting portion that is wrapped around the extending portion, extends into the second opening, and electrically connects the active layers on both sides of the second opening.

2. The active layer includes a first conductivized portion and a second conductivized portion, and the first conductivized portion and the second conductivized portion are located on both sides of the second opening in a first direction. The connecting portion is at least partially located within the second opening and connects the first conductivized portion and the second conductivized portion. The display substrate according to Claim 1.

3. A front projection of the conductive structure on the base substrate covers a front projection of the second opening on the base substrate, and the second opening is completely filled by the connecting portion. The display substrate according to Claim 2.

4. The conductive structure further includes: a first wrapping portion located on a side of the extending portion away from the base substrate and configured to be in direct contact with the extending portion; a second wrapping portion located on a side of the first conductivized portion away from the base substrate and configured to be in direct contact with the first conductivized portion. The first wrapping portion, the second wrapping portion, and the connecting portion are sequentially and continuously arranged in the first direction. The display substrate according to Claim 2.

5. The conductive structure further includes: a third wrapping portion located on a side of the second conductivized portion away from the base substrate and configured to be in direct contact with the second conductivized portion. The display substrate according to Claim 4.

6. The conductive structure further includes: a fourth wrapping portion located on a side of the main body portion of the metal conductive layer away from the base substrate. The display substrate according to claim 5, wherein a front projection of the fourth lap portion on the base substrate is located outside a front projection of the first opening portion on the base substrate.

7. The display substrate according to claim 6, wherein a value range of a sum of a first size of the third lap portion in the first direction and a second size of the fourth lap portion in the first direction is 0.5 to 1.5 microns.

8. The display substrate according to claim 6, wherein the first size of the third lap portion in the first direction or the second size of the fourth lap portion in the first direction is smaller than a size of the second opening portion in the first direction.

9. The display substrate according to claim 6, wherein the first size of the third lap portion in the first direction or the second size of the fourth lap portion in the first direction is smaller than a size of the first conducting portion in the first direction.

10. The display substrate according to claim 6, wherein the size of the first conducting portion in the first direction is smaller than the size of the second opening portion in the first direction.

11. The display substrate according to claim 6, wherein the size of the conductive structure in the first direction is smaller than the size of the second conducting portion in the first direction.

12. The metal conductive layer includes a drain electrode and a gate electrode. The drain electrode and the gate electrode are located on both sides of the second opening portion in the first direction, and the drain electrode is configured to be in partial contact with the first conducting portion. The active layer further includes a channel located on a side away from the second opening portion of the second conducting portion. A front projection of the gate electrode on the base substrate overlaps a front projection of the channel on the base substrate. The display substrate according to claim 6.

13. The display substrate according to claim 12, wherein the size of the conductive structure in the first direction is smaller than the size of the channel in the first direction.

14. The display substrate according to claim 12, wherein a size of a contact region between the drain electrode and the first conducting portion in the first direction is larger than a size of a contact region between the conductive structure and the active layer in the first direction.

15. The display substrate according to any one of claims 1 to 14, wherein the material of the conductive structure includes a transparent conductive oxide.

16. The display substrate according to any one of claims 1 to 14, wherein a thickness of the conductive structure in a second direction perpendicular to the base substrate is greater than a thickness of the active layer in the second direction.

17. A buffer layer located on a side of the active layer closer to the base substrate; The display substrate according to any one of claims 1 to 14, further comprising a conductive light-shielding layer located between the buffer layer and the base substrate.

18. A display device including the display substrate according to any one of claims 1 to 14.

19. A method for manufacturing a display substrate, comprising: forming an active material layer and a gate electrode insulating layer on a base substrate in sequence, and patterning the gate electrode insulating layer to form a first gate electrode insulating pattern including an insulating layer opening; performing a first conductorization process on the active material layer by using the insulating layer opening; forming a metal material layer on a side of the first gate electrode insulating pattern away from the base substrate; forming a first photoresist pattern including a mask opening, and patterning the metal material layer by using the first photoresist pattern to form a metal conductive layer; patterning the first gate electrode insulating pattern by using the first photoresist pattern, further removing a part of the first gate electrode insulating pattern to form a second gate electrode insulating pattern, wherein the second gate electrode insulating pattern includes a first opening; performing a second conductorization process on the active material layer by using the first photoresist pattern, and forming an active layer by partially removing the active material layer in the patterning process of the second gate electrode insulating pattern and the second conductorization process, wherein the active layer includes a second opening; forming a conductive structure on a side of the metal conductive layer away from the base substrate, wherein a positive projection of the second opening on the base substrate is located within a positive projection of the first opening on the base substrate, the metal conductive layer includes a main body portion and an extending portion extending into the first opening, the extending portion is electrically connected to the active layer exposed by the first opening, the conductive structure is wrapped around the extending portion, and includes a connecting portion extending into the second opening and electrically connecting the active layers on both sides of the second opening. The method for manufacturing a display substrate.

20. The step of forming a conductive structure on the side of the metal conductive layer away from the base substrate includes: removing the first photoresist pattern and forming a second photoresist pattern on the side of the metal conductive layer away from the base substrate; forming a conductive layer on the side of the second photoresist pattern away from the base substrate; peeling off the second photoresist pattern and also peeling off the conductive layer on the second photoresist pattern, and the remaining conductive layer forms the conductive structure. The manufacturing method of the display substrate according to claim 19 includes these steps.

21. The step of patterning the gate electrode insulating layer to form the first gate electrode insulating pattern including the insulating layer opening includes: forming a third photoresist pattern on the side of the gate electrode insulating layer away from the base substrate using a first mask plate; patterning the gate electrode insulating layer using the third photoresist pattern to form the first gate electrode insulating pattern. The manufacturing method of the display substrate according to claim 20 includes these steps.

22. The step of forming the second photoresist pattern on the side of the metal conductive layer away from the base substrate includes: forming the second photoresist pattern on the side of the metal conductive layer away from the base substrate using the first mask plate. The manufacturing method of the display substrate according to claim 21 includes this step.

23. The overlapping portion of the orthographic projection of the insulating layer opening on the base substrate and the orthographic projection of the mask opening on the base substrate substantially overlaps with the orthographic projection of the second opening on the base substrate. The manufacturing method of the display substrate according to any one of claims 19 to 22.

24. The active layer includes a first conducting portion and a second conducting portion. The first conducting portion and the second conducting portion are located on both sides of the second opening in the first direction. The connecting portion is at least partially located in the second opening and connects the first conducting portion and the second conducting portion. The manufacturing method of the display substrate according to any one of claims 19 to 22.

25. The orthographic projection of the conductive structure on the base substrate covers the orthographic projection of the second opening on the base substrate, and the second opening is completely filled by the connecting portion. The manufacturing method of the display substrate according to claim 24.

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