Wide-angle small electron optical column

Abstract

A small electron optical column device is disclosed. The device may include a set of electron optical elements configured to direct a primary electron beam towards a specimen. The set of electron optical elements may include an objective lens. The device may also include a deflection subsystem. The deflection subsystem may include one or more pre-lens deflectors disposed between the electron beam source and the objective lens. The deflection subsystem may also include a post-lens deflector disposed between the objective lens and the specimen. The deflection subsystem may also include a post-lens small optical element disposed between the objective lens and the specimen.

Description

Technical Field

[0001] The present invention generally relates to a small electron optical column, and more specifically, to a deflection system for a small electron optical column that provides a wide field of view.

Background Art

[0002] By identifying and classifying defects on a semiconductor wafer using a characterization system, a defect population (defect group information) can be generated for the specimen. Examples of what can be included in the characterization system are an optical characterization system, a charged particle characterization system, such as an electron beam system. In an electron beam characterization system, the characteristics of the specimen are elucidated by directing an electron beam at the specimen and collecting secondary and / or backscattered electrons emitted from the specimen by a suitably configured detector.

[0003] In an electron beam characterization system, the resolution at the corners of the scanning field is limited by the deflection aberration of the system. A correction element is required to overcome such aberration. In current electron beam characterization systems, the correction element is placed in front of the objective lens or within the aperture of the objective lens. However, as the size of the electron optical column of the electron beam characterization system becomes smaller, the aperture diameter of the objective lens becomes smaller. As the aperture diameter of the objective lens decreases, it becomes difficult to insert an in-lens correction element within the aperture of the objective lens.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Therefore, it may be desirable to provide a system and method that addresses the shortcomings of the conventional techniques described above.

Means for Solving the Problems

[0006] A small electron optical column device with a wide field of view (FOV) is disclosed in accordance with one or more embodiments of the present disclosure. In one embodiment, the device has a set of electron optical elements configured to direct a primary electron beam from an electron beam source towards a specimen, and the set of electron optical elements includes an objective lens. In one embodiment, the device also has a deflection subsystem. In one embodiment, the deflection subsystem has one or more pre-lens deflectors disposed between the electron beam source and the objective lens. In one embodiment, the deflection subsystem has a post-lens deflector disposed between the objective lens and the specimen. In one embodiment, the deflection subsystem has a post-lens small optical element disposed between the objective lens and the specimen.

[0007] According to one embodiment, this small column optical column device can be integrated into a characterization system.

[0008] Both the foregoing summary and the following detailed description are exemplary and explanatory only and do not necessarily limit the invention described in the claims. The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and, together with the general description, serve to explain the principles of the invention.

[0009] With reference to the following accompanying drawings, those skilled in the art (so-called persons having ordinary skill in the art) in the technical field of the present disclosure will be able to understand many advantages of the present disclosure.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2A

Figure 2B

Figure 3

Figure 4

Figure 5

[0011] The present disclosure is specifically illustrated and described in connection with specific embodiments and their specific features. The embodiments described in this application should be understood as illustrative rather than limiting. Various modifications and changes can be made to the form and details without departing from the spirit and scope of the present disclosure. Hereinafter, reference will be made in detail to the disclosed subject matter depicted in the accompanying drawings.

[0012] Embodiments of the present disclosure are directed to a deflection system for a small electron beam column. More specifically, embodiments of the present disclosure are directed to a deflection system configured to maximize the scanning size of a small electron optical column by placing one or more components of the deflection system between the objective lens and the specimen, and by placing one or more components of the deflection system between the electron beam source and the objective lens.

[0013] FIG. 1 depicts a schematic diagram of a small electron optical column 100 incorporating a deflection system 102 according to one or more embodiments of the present disclosure.

[0014] In various embodiments, the deflection system 102 includes a post-lens deflector 104 and a post-lens miniaturized optical element 106. The post-lens deflector 104 and the post-lens miniaturized optical element 106 can be disposed at a selected position between the objective lens 108 and the specimen 112. By placing one or more components of the deflection system 102 at a selected position below the objective lens 108 and thereby maximizing the scanning size of the deflection system 102, the miniaturized electron optical column 100 can be made to have a wide field of view.

[0015] The post-lens miniaturized optical element 106 can include any miniaturized optical element known in the art of this technology. For example, one or more extraction control electrodes can be included in the post-lens miniaturized optical element 106. According to another example, one or more shielding electrodes can be included in the post-lens miniaturized optical element 106. According to another example, a post-lens detector can be included in the post-lens miniaturized optical element 106. According to another example, one or more additional post-lens deflectors can be included in the post-lens miniaturized optical element 106. According to another example, one or more electrostatic lenses can be included in the post-lens miniaturized optical element 106. According to another example, one or more miniaturized magnetic deflectors can be included in the post-lens miniaturized optical element 106.

[0016] The post-lens deflector 104 and the post-lens miniaturized optical element 106 can be formed using one or more types of silicon microfabrication technologies and one or more types of microelectromechanical (MEMS) materials (e.g., silicon and borosilicate glass).

[0017] In addition, the deflection system 102 can be configured to include one or more pre-lens deflectors 110. In various embodiments, the one or more pre-lens deflectors 110 are disposed at a selected position above the aperture of the objective lens 108. For example, as shown in FIG. 1, one or more pre-lens deflectors 110 can be disposed between the objective lens 108 and the electron beam source 114.

[0018] In various embodiments, one or more of the deflectors 104, 110 can be configured to align and deflect the primary beam 101. For example, one or more electrostatic octupole deflectors can be included in the one or more deflectors 104, 110. According to another example, one or more electrostatic quadrupole deflectors can be included in the one or more deflectors. According to another example, one or more electrostatic dodecapole deflectors can be included in the one or more deflectors.

[0019] In various embodiments, one or more pre-lens deflectors 110 are configured to perform cooperative deflection in phase or out of phase to maximize the scanning field in the specimen 112. For example, one or more pre-lens deflectors 110 can be operated in pairs or groups to divide the full scanning field (e.g., the main field) into several sub-fields. As an example, the deflection system 102 can be provided with one or more upper pre-lens deflectors 110 and one or more lower pre-lens deflectors 110, and the one or more upper pre-lens deflectors 110 and the one or more lower pre-lens deflectors 110 can be operated in pairs or groups to divide the full scanning field into several sub-fields. At this time, a correction signal can be applied to the deflection signal from one or more pre-lens deflectors 110 (e.g., one or more upper pre-lens deflectors 110 or one or more lower pre-lens deflectors 110) to counter the aberrations of the primary beam 101 including spherical aberration and / or misalignment. Such a configuration is discussed in more detail in FIGS. 2A-3.

[0020] The one or more pre-lens deflectors 110 can be formed using one or more types of silicon microfabrication techniques and one or more types of microelectromechanical (MEMS) materials (e.g., silicon and borosilicate glass).

[0021] The deflection system 102 can be integrated with any type of objective lens 108. For example, a magnetic objective lens can be included in the objective lens 108. As an example, a permanent magnet objective lens can be included in the objective lens 108. According to another example, an electrostatic objective lens can be included in the objective lens 108. Since the permanent magnet objective lens is outlined in U.S. Patent Application No. 17 / 658637, dated April 8, 2022, the entire content thereof is hereby incorporated by reference into this application.

[0022] The objective lens 108 can have a small aperture diameter. For example, the aperture diameter in the objective lens 108 can be less than 4 mm. According to another example, the aperture diameter in the objective lens 108 can be less than 2 mm. According to another example, the aperture diameter in the objective lens 108 can be less than 1 mm. It should be noted that since it would be difficult to insert one or more correction elements into the aperture of the objective lens due to the small size of the aperture, it is advisable to place one or more components of the deflection system 102 below the objective lens 108, thereby maximizing the scanning size of the column 100 to provide a wide field of view.

[0023] In various embodiments, the deflection system 102 is configured to reinforce the deflection of one or more components of the self-deflection system 102. For example, the post-lens deflector 104 can be configured to reinforce the deflection of one or more pre-lens deflectors 110.

[0024] In various embodiments, the deflection system 102 is configured to apply one or more corrections to the primary electron beam 101. For example, the deflection system 102 can be configured to correct spherical aberration by applying one or more corrections. As an example, one or more pre-lens deflectors 110 can be configured to correct spherical aberration by applying post-lens corrections. As another example, the post-lens deflector 104 can be configured to correct spherical aberration by applying post-lens corrections. As another example, the post-lens small optical element 106 can be configured to correct spherical aberration by applying post-lens corrections.

[0025] FIGS. 2A and 2B depict deflection systems 102 and 200 with and without post-lens correction, respectively. As shown in FIG. 2A, in the deflection system 200, one or more pre-lens deflectors 202 and the objective lens 204 can be disposed above the specimen 206. In the deflection system 200 in this case, since post-lens correction cannot be applied to correct field curvature, the best focus plane 208 for the primary beam 201 is a curved field. In contrast, as shown in FIG. 2B, in the case where the deflection system 102 can apply post-lens correction to correct field curvature, the best focus plane for the primary beam 201 is flat rather than curved, so that a good focused state is ensured over the portion of the specimen 112 inspected by the beam 101. As shown in FIG. 2B, the deflection system 102 can be configured to correct field curvature by applying one or more corrections. As an example, the post-lens deflector 104 can be configured to correct field curvature by applying post-lens corrections. As another example, the post-lens small optical element 106 can be configured to correct field curvature by applying post-lens corrections.

[0026] According to another example, the deflection system 102 can be configured to correct the offset by applying one or more corrections. As an example, the post-lens deflector 104 can be configured to apply offset correction. As another example, one or more pre-lens deflectors 110 can be configured to correct the offset by applying one or more corrections. As another example, the post-lens small optical element 106 can be configured to apply offset correction.

[0027] In various embodiments, the deflection system 102 is configured to apply dynamic focus correction to the primary electron beam 101. For example, the post-lens small optical element 106 can be configured to apply dynamic focus correction to the primary electron beam 101. According to another example, the post-lens deflector 104 can be configured to apply dynamic focus correction to the primary electron beam 101.

[0028] In various embodiments, the deflection system 102 is configured for scanning. For example, one or more pre-lens deflectors 110 can be configured for scanning. According to another example, the post-lens deflector 104 can be configured for scanning. According to another example, the post-lens small optical element 106 can be configured for scanning.

[0029] It should be noted that while one or more components of the deflection system 102 are configured to perform scanning, additional components of the deflection system 102 can be configured to perform additional functions (e.g., scanning, offset correction, etc.). For example, as shown in FIG. 3, one or more pre-lens deflectors 110 can be configured to offset (shift) the position of the primary electron beam 101, while the post-lens small optical element 106 can be configured for scanning.

[0030] As shown in FIG. 3, by modifying the position of the beam with one or more pre-lens deflectors 110, the small scanning area generated by the post-lens small optical element 106 can be placed within an arbitrary portion of the main field 303 (e.g., the range of one or more pre-lens deflectors 110). For example, the small scanning area of the post-lens small optical element 106 can be arranged within the sub-field 302 of the main field 303. In this example, by modifying the sub-field origin position 301 of the beam with one or more pre-lens deflectors 110, the small scanning area can be placed within the sub-field 302.

[0031] In various embodiments, the scanning can be static or dynamic. For example, when the scanning is static, the specimen stage can be made static (not moved), and the sub-field 302 can be scanned by the beam with some offsets 301. Also, for example, when the scanning is dynamic, the specimen stage can be made dynamic (moved), and it is necessary to track the movement of the defect when it moves on the main field 303 in the scanning field. In this example, the vector position 301 can be configured to track the movement of the specimen stage.

[0032] It should be noted that as the main field 303 is scanned transversely by the beam, one or more sets of corrections are applied to the post-lens deflector 104.

[0033] In various embodiments, the deflection system 102 is configured to vary the extraction field from the specimen 112. For example, the post-lens small optical element 106 can be configured to vary the extraction field from the specimen. As an example, the post-lens small optical element 106 can include an extraction control electrode 106 configured to vary the extraction field from the specimen.

[0034] In various embodiments, the deflection system 102 can be configured to vary the end field. For example, the post-lens small optical element 106 can be configured to vary the end field.

[0035] In various embodiments, the deflection system 102 can be configured to vary the focusing element. For example, the small post-lens optical element 106 can be configured to vary the focusing element.

[0036] It should be noted that the deflection system 102 may be configured to perform multiple functions simultaneously. For example, the deflection system 102 can be configured to perform scanning, aberration correction, offset correction, or field curvature correction simultaneously.

[0037] Conversely, according to FIG. 1, the deflection system 102 can be integrated into the small electron optical column 100. Such a small electron optical column 100 can be used in a multi-column characteristic elucidation system (e.g., the system 500 shown in FIG. 5). It should be noted that the deflection system 102 can be configured to provide a wide field of view by maximizing the scanning size of the small electron optical column 100. It should be noted that the descriptions of the various embodiments, components, and operations described above in this application in relation to the deflection system 102 should be construed as being extended to the small electron optical column 100, and vice versa.

[0038] In various embodiments, the small electron optical column 100 has an electron source 114. The electron source 114 can be one having an emitter 116. The small electron optical column 100 may have any type of electron source, including but not limited to a field emission gun (FEG). FEGs may include, but are not limited to, Schottky emitters, carbon nanotube emitters, nanostructured carbon emitters, Müller emitters, spin emitters, etc.

[0039] In various embodiments, the small electron optical column 100 can be one having a set of electron optical elements 120. The various electron optical elements of the small electron optical column 100 can be disposed in the vacuum chamber 118.

[0040] Among that set of electron optical elements 120, although not essential, an extractor / condenser lens 122, a beam limiting aperture 124, and a detector 126 can be included. In FIG. 1, a specific configuration of the electron optical elements is depicted, but it should be noted that this depiction is presented for illustrative purposes only and is not to be construed as a limitation on the technical scope of the present disclosure.

[0041] In various embodiments, the detector 126 can be configured to collect secondary and / or backscattered electrons 501 emitted from the surface of the specimen 112 in response to the primary electron beam. The detector 126 can include, but is not limited to, all kinds of detectors known in the art, such as photodiodes, avalanche photodiodes, photomultiplier tubes, scintillators, microchannel plates, etc.

[0042] In various embodiments, the small electron-optical column 100 is communicatively coupled to a controller. The controller can include, but is not limited to, one or more processors, memories, detectors, amplifiers, and digitizers, one or more component power supplies, etc. The controller can transmit and / or receive data from any member of the small electron-optical column 100 and store the data in the memory. The one or more processors can be configured to execute program instructions held on a storage medium (memory). In this case, any of the various process steps described throughout the present disclosure may be executed by one or more processors provided in the controller. For example, one or more processors provided in the controller can be configured to determine an amount of coma aberration correction. As an example, the one or more processors can be configured to determine the amount of coma aberration correction based on at least one of a look-up table and an analysis function stored in the memory. According to another example, one or more processors provided in the controller can be configured to determine an amount of focus correction. As an example, the one or more processors can be configured to determine the amount of focus correction based on at least one of a look-up table and an analysis function stored in the memory.

[0043] In various embodiments, the controller is connected to one or more elements of the small electron-optical column 100. For example, the controller can be connected to one or more elements of the deflection system 102, and thus, the controller can be configured to adjust one or more characteristics of the primary beam through one or more elements of the deflection system. As an example, the controller can be configured to adjust one or more characteristics of the primary beam based on at least one of the determined amount of focus correction and the determined amount of coma aberration correction.

[0044] The flow diagram depicted in FIG. 4 relates to one or more embodiments of the present disclosure and depicts a method or process 400 for applying one or more corrections using the deflection system 102. It should be noted that the steps of method 400 can be performed in whole or in part by the deflection system 102. However, according to further understanding, method 400 is not limited to the deflection system 102, and all or some of the steps of method 400 may be performed in additional or alternative system-level embodiments.

[0045] In step 402, a primary electron beam can be generated using an electron beam source. For example, the electron beam source 114 can be configured to generate an electron beam 101 and direct the primary electron beam 101 towards the specimen 112.

[0046] In step 404, the primary electron beam can be directed towards the specimen 112 using a small electron optical column. For example, the small electron optical column 100 can be assumed to have a set of electron optical elements 120 configured to receive the primary electron beam 101 and direct the primary electron beam 101 towards the specimen 112. The set of electron optical elements 120 can include any electron optical elements known in the art, including but not limited to a beam limiting aperture, a deflector, an electron optical lens, a condenser lens (e.g., a magnetic condenser lens), an objective lens (e.g., a magnetic objective lens or an electrostatic objective lens), etc.

[0047] In step 406, one or more pre-lens deflectors can be used to adjust one or more characteristics of the primary electron beam. For example, one or more pre-lens deflectors 110 can be configured to apply one or more dynamic focus corrections to the primary electron beam 101.

[0048] In step 408, the post-lens deflector can be used to adjust one or more characteristics of the primary electron beam. For example, the post-lens deflector 104 can be configured to reinforce the deflection of one or more pre-lens deflectors 110. According to another example, the post-lens deflector 104 can be configured to apply one or more corrections to the primary electron beam 101. As an example, the post-lens deflector 104 can be configured to correct spherical aberration by applying one or more corrections to the primary electron beam 101. As another example, the post-lens deflector 104 can be configured to correct field curvature by applying one or more corrections to the primary electron beam 101. As another example, the post-lens deflector 104 can be configured to correct offset by applying one or more corrections to the primary electron beam 101.

[0049] In step 410, the post-lens small optical element can be used to adjust one or more characteristics of the primary electron beam. For example, the post-lens small optical element 106 can be configured to vary the extraction field from the specimen 112.

[0050] FIG. 5 depicts a simplified schematic block diagram of a multi-column characteristic elucidation system 500 in which a deflection system 102 according to one or more embodiments of the present disclosure is integrated. It should be noted that the descriptions of the various embodiments, components, and operations described above in the present application in relation to the deflection system 102 and the electron column 100 should be construed as being extended to the multi-column characteristic elucidation system 500, and vice versa.

[0051] As shown in FIG. 5, the deflection system 102 can be integrated within the characterization system 500. It should be noted that what can be included in the characterization system 500 includes, but is not limited to, inspection systems and metrology systems. In view of the purpose of the present disclosure, it should be noted that the characterization system 500 can be referred to as a characterization tool. Similarly, the metrology system can be referred to as a metrology tool, and the inspection system can be referred to as an inspection tool.

[0052] In various embodiments, as shown in FIG. 5, the characterization system 500 is a multi-column characterization system 500. In this embodiment, the multi-column characterization system 500 can be made up of a plurality of small electron optical columns 100 (e.g., small columns), each of which has a deflection system 102. For example, the multi-column characterization system 500 can be made to have a first small electron optical column, a second small electron optical column, a third small electron optical column, and even more than N small electron optical columns. Since the multi-column electron beam type characterization system is outlined in Patent Document 1 titled "Ultra-High Sensitivity Hybrid Inspection with Full Wafer Coverage Capability" issued on January 28, 2020, the entire content thereof is incorporated herein by reference. Since the multi-column electron beam type characterization system is outlined in US Patent Application No. 17 / 658637 filed on April 8, 2022, the entire content thereof is incorporated herein by reference.

[0053] Although the specific configuration of the electron optical column is depicted in FIG. 5, it should be noted that this depiction is presented for illustrative purposes only and is not to be construed as a limitation on the technical scope of the present disclosure. There can be any number of electron columns 100 within the system 500 in which the deflection system 102 is integrated. For example, there can be a single column 100 within the system 500 with a single deflection system 102 integrated therein.

[0054] Specimen 112 can include, but is not limited to, a photomask, a reticle, a wafer, etc., and can include any specimen known in the technical field of the present case. As used throughout the present disclosure, the term "wafer" refers to a substrate formed of a semiconductor and / or non-semiconductor material. As an example, in the case of a semiconductor material, the wafer can be formed of, but is not limited to, single crystal silicon, gallium arsenide, and / or indium phosphide. Therefore, the terms "wafer" and "specimen" can be used interchangeably in the present disclosure. Accordingly, the above description should be construed as illustrative only and not as a limitation on the technical scope of the present disclosure.

[0055] Any of the methods described in the present application can be such that the results of one or more steps of those method embodiments are stored in a memory. Those results can be any of the results described in the present application and can be stored in any manner known in the technical field of the present case. The memory can include any memory described in the present application and can also include any other suitable storage medium known in the technical field of the present case. After the results are stored, access can be made to the results in the memory, and the results can be used by any of the methods or system embodiments described in the present application, formatted for display to a user, used in another software module, method, or system, etc. Further, the results can be stored "permanently," "semi-permanently," "temporarily," or for some period of time. For example, the memory can be a random access memory (RAM), and the results do not necessarily have to exist permanently in the memory.

[0056] According to further consideration, each of the above-described method embodiments can include any other step(s) of any other method(s) described in the present application. In addition, each of the above-described method embodiments can be executed by any of the systems described in the present application.

[0057] The various members, operations, devices, objects, and the accompanying discussions described in this application are used as examples to contribute to conceptual clarity, and various structural modifications are considered. That is, according to the usage in this application, the intention of the specific exemplars described and the accompanying discussions is to represent their more general classes. Generally, since the intention of using any specific exemplar is to represent that class, the non-inclusion of a particular member, operation, device, and object should not be construed as a limitation.

[0058] As used in this application, directional terms such as "top", "bottom", "above", "below", "upper", "upward", "lower", "downward", and "down" are intended to present relative positions for descriptive purposes and are not intended to specify an absolute reference coordinate system. It will be apparent to those of ordinary skill in the art that various modifications can be made to the described embodiments, and the general principles defined in this application can be applied to other embodiments.

[0059] Regarding the use of almost all plural and / or singular terms in this application, those of ordinary skill in the art can read them appropriately from plural to singular and / or from singular to plural according to the context and / or usage. For the sake of clarity, this application does not explicitly explain various singular / plural readings.

[0060] The subject matter described in the present application may sometimes be depicted by components incorporated within or connected / linked to other components. It should be understood that such illustrated configurations are merely exemplary, and in fact, many other configurations can be implemented to achieve the same function. Conceptually, any component arrangement capable of achieving the same function is effectively "cooperated" so that the desired function is achieved. Therefore, any two components combined in the present application to achieve a specific function can be regarded as "cooperated" with each other so that the desired function is achieved, regardless of the configuration or intervening components. Similarly, any two components that can be cooperated in this way can also be regarded as "connected / linked" or "coupled" to each other to achieve the desired function, and any two components that can be cooperated in this way can also be regarded as "couplable" to each other to achieve the desired function. Specific examples of "couplable" include, but are not limited to, the physical fitability and / or physical interaction of components, and / or the wireless interaction possibility and / or wireless interaction of components, and / or the logical interaction and / or logical interaction possibility of components.

[0061] Furthermore, the present invention is defined by the claims in a separate section. Generally, the terms used in the claims of this application, particularly in the claims in a separate section (e.g., the body of the claims in a separate section), are generally intended to be “open” terms (e.g., the term “comprising” should be construed as “including but not limited to”, the term “having” should be construed as “having at least”, the term “including” should be construed as “including but not limited to”, etc.). If it is intended to introduce requirements within a specific number of claims, the intention is clearly stated in those claims, so if there is no such requirement description, it means there is no such intention. For example, for the sake of understanding, in the appended claims below, requirements within the claims may be introduced by the use of introductory phrases “at least one” and “one or more”. However, the use of such phrases should not be interpreted as if there is an implication that all individual claims including the requirements introduced within the claims by the indefinite article “a” or “an” are limited to inventions that include only one such component. Nor should it be so interpreted even when the introductory phrase “one or more” or “at least one” coexists with the indefinite article, for example, “a” or “an” in a claim (e.g., “a” and / or “an” should generally be construed as meaning “at least one” or “one or more”). The same also holds true for the introduction of requirements within the claims by the use of the definite article. In addition, even when a specific number is clearly stated for a requirement introduced within a claim, as would be recognized by a person skilled in the art, the number description should generally be construed to mean at least that explicitly stated number (e.g., the bare expression “two components” lacking other modifying phrases generally means at least two components or two or more components). Furthermore, in examples where a convention such as “at least one of A, B, and C, etc.” is used, generally, such syntax is intended to follow the sense in which a person skilled in the art would understand such a convention (e.g., the system “having at least one of A, B, and C” would include, but is not limited to, a system having only A, only B, only C, both A and B, both A and C, both B and C, and / or all three of A, B, and C, etc.).In an example where a convention similar to "at least one of A, B, or C, etc." is used, generally, such a syntax is intended to follow the sense in which a so-called person skilled in the art would understand the convention (e.g., "a system having at least one of A, B, or C" would include, but not be limited to, a system having only A, only B, only C, both A and B, both A and C, both B and C, and / or all of A, B, and C, etc.). Again, so that it can be understood by a so-called person skilled in the art, almost all disjunctive conjunctions and / or disjunctive clauses presenting two or more alternative words should be understood to potentially include one word, any one word, or both words, regardless of where they are in the specification, the claims, and the drawings. For example, the phrase "A or B" would be understood to include the possibilities of "A" or "B" or "A and B".

[0062] Many of the present disclosure and its attendant advantages will be understood from the foregoing description, and it will also be apparent that various modifications can be made to the form, construction, and arrangement of the various components without departing from the disclosed subject matter or sacrificing all of its main advantages. The forms described are for illustrative purposes only, and the intent of the claims set forth hereinafter is to cover, include such modifications. Further, it is the claims in a separate section that define the present invention.

Claims

1. A small electron optical column device with a wide field of view, comprising a set of electron optical elements configured to direct a primary electron beam from an electron beam source towards a specimen, the set of electron optical elements including an objective lens, a deflection subsystem, wherein the deflection subsystem includes one or more pre-lens deflectors disposed between the electron beam source and the objective lens, a post-lens deflector disposed between the objective lens and the specimen, a post-lens small optical element disposed between the objective lens and the specimen, a small electron optical column device.

2. The small electron optical column device according to claim 1, wherein the post-lens deflector is configured to reinforce the deflection of the one or more pre-lens deflectors disposed between the electron beam source and the objective lens.

3. The small electron optical column device according to claim 1, wherein the post-lens deflector is configured to apply one or more corrections to the primary electron beam.

4. The small electron optical column device according to claim 3, wherein the one or more corrections are configured to correct at least one of spherical aberration, field curvature, and offset.

5. The small electron optical column device according to claim 1, wherein the post-lens deflector is configured to apply one or more dynamic focus corrections to the primary electron beam.

6. The small electron optical column device according to claim 1, wherein the post-lens deflector is configured for scanning.

7. The small electron optical column device according to claim 1, wherein the post-lens deflector includes a post-lens deflector made of silicon.

8. The small electron optical column device according to claim 1, wherein the post-lens small optical element is configured to apply one or more corrections to the primary electron beam.

9. The small electron optical column device according to claim 8, wherein the one or more corrections are configured to correct at least one of spherical aberration, field curvature, and offset.

10. The small electron optical column device according to claim 8, wherein the one or more corrections are configured to correct at least one of spherical aberration, field curvature, and offset.

10. The small electron optical column device according to claim 1, wherein the small optical element after the lens is configured to apply one or a plurality of dynamic focus corrections to the primary electron beam.

11. The small electron optical column device according to claim 1, wherein the small optical element after the lens is configured for scanning.

12. The small electron optical column device according to claim 1, wherein the small optical element after the lens is configured to be able to vary the extraction field from the specimen.

13. The small electron optical column device according to claim 1, wherein the small optical element after the lens is configured to be able to vary the terminal field.

14. The small electron optical column device according to claim 1, wherein the small optical element after the lens is configured to be able to vary the focusing element.

15. The small electron optical column device according to claim 1, wherein the small optical element after the lens is formed of silicon.

16. The small electron optical column device according to claim 1, wherein the small optical element after the lens includes a detector after the lens.

17. The small electron optical column device according to claim 1, wherein the small optical element after the lens includes an extraction control electrode.

18. The small electron optical column device according to claim 1, wherein the small optical element after the lens includes a shielding electrode.

19. The small electron optical column device according to claim 1, wherein the small optical element after the lens includes an additional deflector after the lens.

20. The small electron optical column device according to claim 1, wherein the small optical element after the lens includes an electrostatic lens.

21. The small electron optical column device according to claim 1, wherein the one or more deflectors before the lens are configured to apply one or a plurality of corrections to the primary electron beam.

22. The small electron optical column device according to claim 21, wherein the one or a plurality of corrections are A small electron optical column device configured to correct at least one of astigmatism and offset.

23. The small electron optical column device according to claim 1, wherein the one or more pre-lens deflectors are configured for scanning.

24. The small electron optical column device according to claim 1, wherein the one or more pre-lens deflectors include one or more pre-lens deflectors made of silicon.

25. The small electron optical column device according to claim 1, wherein the objective lens has a hole diameter of less than 4 mm.

26. The small electron optical column device according to claim 25, wherein the objective lens has a hole diameter of less than 2 mm.

27. The small electron optical column device according to claim 26, wherein the objective lens has a hole diameter of less than 1 mm.

28. A multi-column property elucidation system, one or more electron beam sources configured to generate an array of primary electron beams, a plurality of small electron optical columns, each of the plurality of small electron optical columns comprising a set of electron optical elements configured to direct a primary electron beam toward a specimen, the set of electron optical elements comprising an objective lens, a deflection subsystem, wherein the deflection subsystem comprises one or more pre-lens deflectors disposed between the electron beam source and the objective lens, a post-lens deflector disposed between the objective lens and the specimen, a post-lens small optical element disposed between the objective lens and the specimen, A multi-column property elucidation system comprising.

29. The multi-column property elucidation system according to claim 28, wherein the post-lens deflector is configured to reinforce the deflection of the one or more pre-lens deflectors disposed between the electron beam source and the objective lens.

30. The multi-column property elucidation system according to claim 28, wherein the post-lens deflector is configured to apply one or more corrections to the primary electron beam.

31. The multi-column property elucidation system according to claim 30, wherein the one or more corrections are A multi-column characteristic elucidation system configured to correct at least one of spherical aberration, field curvature, and offset.

32. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens deflector is configured to apply one or more dynamic focus corrections to the primary electron beam.

33. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens deflector is configured for scanning.

34. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens deflector includes a post-lens deflector made of silicon.

35. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens small optical element is configured to apply one or more corrections to the primary electron beam.

36. The multi-column characteristic elucidation system according to claim 35, wherein the one or more corrections are configured to correct at least one of spherical aberration, field curvature, and offset.

37. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens small optical element is configured to apply one or more dynamic focus corrections to the primary electron beam.

38. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens small optical element is configured for scanning.

39. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens small optical element is configured to vary the extraction field from the specimen.

40. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens small optical element is configured to vary the terminal field.

41. The multi-column characteristic elucidation system according to claim 28, wherein the post-lens small optical element is configured to vary the focusing element.

42. The multi-column characteristic elucidation system according to claim 28, wherein the small optical element behind the lens is made of silicon.

43. The multi-column characteristic elucidation system according to claim 28, wherein the small optical element behind the lens includes a detector behind the lens.

44. The multi-column characteristic elucidation system according to claim 28, wherein the small optical element behind the lens includes an extraction control electrode.

45. The multi-column characteristic elucidation system according to claim 28, wherein the small optical element behind the lens includes a shielding electrode.

46. The multi-column characteristic elucidation system according to claim 28, wherein the small optical element behind the lens includes an additional deflector behind the lens.

47. The multi-column characteristic elucidation system according to claim 28, wherein the small optical element behind the lens includes an electrostatic lens.

48. The multi-column characteristic elucidation system according to claim 28, wherein the one or more deflectors in front of the lens are configured to apply one or more corrections to the primary electron beam.

49. The multi-column characteristic elucidation system according to claim 48, wherein the one or more corrections are configured to correct at least one of spherical aberration and offset.

50. The multi-column characteristic elucidation system according to claim 28, wherein the one or more deflectors in front of the lens are configured for scanning.

51. The multi-column characteristic elucidation system according to claim 28, wherein the one or more deflectors in front of the lens include one or more deflectors in front of the lens made of silicon.

52. The multi-column characteristic elucidation system according to claim 28, wherein the objective lens has a hole diameter of less than 4 mm.

53. The multi-column characteristic elucidation system according to claim 52, wherein the objective lens has a hole diameter of less than 2 mm.

54. The multi-column characteristic elucidation system according to claim 53, wherein the objective lens has a hole diameter of less than 1 mm.

55. A method comprising: generating a primary electron beam using an electron beam source; directing the primary electron beam onto a specimen using a small electron optical column; adjusting one or more characteristics of the primary electron beam using one or more pre-lens deflectors disposed between the electron beam source and the objective lens of the small electron optical column; adjusting one or more characteristics of the primary electron beam using a post-lens deflector disposed below the objective lens of the small electron optical column; and adjusting one or more characteristics of the primary electron beam using a post-lens small optical element disposed below the objective lens of the small electron optical column. A method comprising the above.

56. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens deflector disposed below the objective lens of the small electron optical column includes reinforcing the deflection of the one or more pre-lens deflectors disposed between the electron beam source and the objective lens.

57. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens deflector disposed below the objective lens of the small electron optical column includes applying one or more corrections to the primary electron beam.

58. The method according to claim 57, wherein the one or more corrections are configured to correct at least one of spherical aberration, field curvature, and offset.

59. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens deflector disposed below the objective lens of the small electron optical column includes applying one or more dynamic focus corrections to the primary electron beam.

60. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens deflector disposed below the objective lens of the small electron optical column includes scanning.

61. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens small optical element disposed below the objective lens of the small electron optical column is A method comprising applying one or more corrections to the primary electron beam.

62. The method according to claim 61, wherein the one or more corrections are A method configured to correct at least one of spherical aberration, field curvature, and offset.

63. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens small optical element disposed below the objective lens of the small electron optical column is A method comprising applying one or more dynamic focus corrections to the primary electron beam.

64. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens small optical element disposed below the objective lens of the small electron optical column includes scanning.

65. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens small optical element disposed below the objective lens of the small electron optical column is A method comprising varying the extraction field from the specimen.

66. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens small optical element disposed below the objective lens of the small electron optical column is A method comprising varying the terminal field.

67. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using a post-lens small optical element disposed below the objective lens of the small electron optical column is A method comprising varying the focusing element.

68. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using one or more pre-lens deflectors disposed above the objective lens of the small electron optical column is A method comprising applying one or more corrections to the primary electron beam.

69. The method according to claim 68, wherein the one or more corrections are A method configured to correct at least one of astigmatism and offset.

70. The method according to claim 55, wherein the adjustment of one or more characteristics of the primary electron beam using one or more pre-deflectors disposed above the objective lens of the small electron optical column is a method including scanning.

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