Solid-State Light-Emitting Components

Abstract

The solid-state light emitting component includes a novel lens structure positioned in contact with at least one solid-state light emitter without an intervening air gap to provide a desired combination of output characteristics, eliminating the need for a second optic. The lens structure has an angled or reflective surface oriented to cause total internal reflection (TIR) of the light radiation toward the light output surface. The non-Lambertian lens structure is configured to generate focused or divergent output radiation with a specific distribution over an angular range. The unitary lens structure has a recess shaped as an inverted pyramid, an inverted cone, or a groove with a base aligned with the radiative center of the solid-state emitter, and walls configured to generate TIR.

Description

Detailed Description of the Invention

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims priority to U.S. Provisional Patent Application No. 63 / 397,068, filed August 11, 2022, the entire contents of which are incorporated herein by reference.

[0002] [Technical field] The subject matter herein relates to solid state light emitting devices that incorporate a unitary lens structure disposed over one or more solid state light emitters (e.g., light emitting diodes (LEDs) optionally in combination with one or more lumiphors), and methods for making such devices.

[0003] [background] Solid-state lighting devices, such as light-emitting diodes (LEDs), are increasingly being used in both consumer and commercial applications. LEDs have been widely adopted not only for backlighting liquid crystal displays and for providing continuously illuminated LED displays, but also in a variety of lighting environments. Lighting applications include vehicle headlamps, street lights, stadium lighting, luminaires, flashlights, and a variety of indoor, outdoor, and specialty lighting environments. Desired characteristics of LED devices for various end uses include high luminous efficacy, a uniform color point across the lighting area, long life, a wide color gamut, and compact size.

[0004] LEDs are solid-state devices that convert electrical energy into light and generally comprise one or more active layers (or active regions) of semiconductor material disposed between oppositely doped n-type and p-type layers. When a bias is applied to the doped layers, holes and electrons are injected into the one or more active layers, where they recombine and generate radiation, such as visible or ultraviolet radiation. LED chips typically comprise an active region that may be fabricated from, for example, silicon carbide, gallium nitride, gallium phosphide, indium phosphide, aluminum nitride, gallium arsenide-based materials, and / or organic semiconductor materials. Photons generated by the active region are omnidirectional.

[0005] Lumiphoric materials, such as phosphors, may be placed in the light emission path of the LED emitter to convert a portion of the light to a different wavelength. LED packages have been developed that can provide mechanical support, electrical connections, and encapsulation for the LED emitter. Light emission from the surface of the LED emitter typically interacts with the lumiphoric material and various elements or surfaces of the LED package before being emitted into the environment, increasing the opportunity for light loss (e.g., due to internal absorption) and potential non-uniformity of light emission. Thus, generating high-quality light with desired emission characteristics while providing high luminous efficacy can be challenging. Because light emitted from the first optic of conventional LED packages is typically too diffuse and lacks intensity at long distances, LED packages often require second optics (e.g., lenses and / or reflectors, including metallized reflectors) to achieve the desired output beam characteristics. However, the second optic increases the size, cost, and complexity of the lighting device and introduces optical losses. Another constraint associated with LED lighting devices is their long-term reliability, especially when their components exhibit different thermal expansion characteristics and are subjected to thermal loads over numerous operating cycles.

[0006] The present technology seeks improved solid state lighting devices with desirable lighting characteristics that can overcome the challenges associated with conventional lighting devices, and methods for manufacturing such devices. [overview] The present disclosure relates to solid-state light emitting components in various aspects that include a novel lens structure disposed in contact with one or more solid-state light emitters (e.g., incorporating at least one LED chip optionally combined with a lumiphoric material covering its exterior surface) to provide a combination of desired output characteristics different from those provided by conventional components. In certain embodiments, the lens structure eliminates the need for secondary optics. In embodiments that include a unitary lens structure, at least a first portion of the lens structure has a width that increases with distance from the solid-state light emitter and has a sloped or curved surface oriented to cause total internal reflection of at least a portion of the light radiation toward one or more light-emitting surfaces of the component. In certain embodiments, a non-Lambertian unitary lens structure is disposed over at least one solid-state light emitter without an intervening air gap, and the lens structure is configured to produce either (a) focused output radiation having an intensity distribution over an angular range with a full-width-at-half-maximum (FWHM) value of less than 100, or (b) divergent output radiation having an intensity distribution over an angular range with a FWHM value of greater than 130. In certain embodiments, the unitary lens structure has a recess shaped as an inverted pyramid, an inverted cone, or a groove having a base aligned with the emissive center of at least one solid state emitter, the recess bounded by one or more sloped walls, an axis extending through the base and the emissive center, the one or more sloped walls sloped away from the axis by an angle ranging from 40 to 44 degrees. In certain embodiments, the lens structure has a light diffusing portion in contact with an outer surface of the at least one solid state emitter, and a complex refractive index portion disposed over the light diffusing portion, the complex refractive index portion having a first region having a first refractive index and a second region having a second refractive index different from the first refractive index, the first region covering less than the entire light diffusing portion.

[0007] In one aspect, the present disclosure relates to a solid state lighting component comprising: at least one solid state light emitter configured to generate light radiation; and a unitary lens structure disposed in contact with the at least one solid state light emitter and configured to receive at least a portion of the light radiation generated by the at least one solid state light emitter, wherein at least a first portion of the unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter, and the at least first portion of the unitary lens structure has at least one sloped or curved surface configured to cause total internal reflection of a portion of the light radiation originating from an emission center of the at least one solid state light emitter, and having at least one sloped or curved surface oriented to reflect light toward one or more light output surfaces of the solid state lighting component.

[0008] In certain embodiments, the at least one sloped or curved surface comprises a peripheral edge surface of at least a first portion of the unitary lens structure. In certain embodiments, the unitary lens structure defines a recess, and at least one sloped or curved surface bounds at least a portion of the recess.

[0009] In certain embodiments, the unitary lens structure further includes a second portion having a width that decreases with distance from the at least one solid state light emitter, and the first portion of the unitary lens structure is disposed between the at least one solid state light emitter and the second portion of the unitary lens structure.

[0010] In certain embodiments, the second portion of the unitary lens structure has a proximal portion with a truncated pyramid shape (e.g., with a square top profile) and a distal portion with a dome shape (e.g., with a circular top profile).

[0011] In certain embodiments, the unitary lens structure has a third portion having a circular or square cross-sectional shape, the third portion being disposed between the first portion and the second portion. In certain embodiments, the unitary lens structure includes a material having a first refractive index, at least a first portion of the unitary lens structure is bounded by an outer lateral lens surface, the outer lateral lens surface is bounded by a material or space having a second refractive index, and the first refractive index exceeds the second refractive index by a value of at least 0.4.

[0012] In certain embodiments, at least a first portion of the unitary lens structure has a truncated inverted pyramid shape (e.g., having a square top profile) or a truncated inverted cone shape (e.g., having a circular top profile).

[0013] In certain embodiments, the unitary lens structure has a recess shaped as an inverted pyramid, an inverted cone, or a groove, with a base aligned with the emission center of the at least one solid state light emitter.

[0014] In certain embodiments, one or more light exit surfaces are disposed along the lateral edges of the unitary lens structure. In certain embodiments, the solid state light emitting component further comprises a second lens structure disposed in contact with the unitary lens structure, the unitary lens structure being disposed between the at least one solid state light emitter and the second lens structure.

[0015] In certain embodiments, the solid state light emitting component further comprises a submount to which the at least one solid state light emitter is mounted, and wherein the width of the unitary lens structure is less than or equal to the width of the submount at a location where the unitary lens structure is disposed in contact with the at least one solid state light emitter.

[0016] In certain embodiments, the at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein the side end surfaces of the LED chip are free of lumiphoric material; and the solid state light emitting component further comprises a submount to which the at least one solid state light emitter is mounted; and a filler material layer including a filler material and contacting the side end surfaces of the at least one solid state light emitter, the filler material including white or light reflective particles dispersed in a binder, wherein a portion of the lumiphoric material overlaps a portion of the filler material layer.

[0017] In certain embodiments, the lumiphoric material layer, the filler material layer, and the unitary lens structure have substantially matched coefficients of thermal expansion (CTE) such that the difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the lens material is in the range of less than 20%.

[0018] In certain embodiments, the unitary lens structure comprises silicone. In another aspect, the present disclosure relates to a solid-state lighting component comprising: at least one solid-state light emitter configured to generate optical radiation; and a non-Lambertian unitary lens structure disposed in contact with the at least one solid-state light emitter and configured to receive at least a portion of the optical radiation generated by the at least one solid-state light emitter, wherein the solid-state lighting component is free of air gaps through which the optical radiation transmits into the non-Lambertian unitary lens structure, and the non-Lambertian unitary lens structure is configured to shape the optical radiation received from the at least one solid-state light emitter to generate output radiation having one of the following characteristics (a) or (b): (a) focused output radiation having an intensity distribution over an angular range with a full width at half maximum (FWHM) value of less than 100; or (b) divergent output radiation having an intensity distribution over an angular range with an FWHM value of greater than 130. In this context, FWHM refers to the difference between two values of the independent variable where the dependent variable is equal to half of its maximum value (which translates to the width of the spectral curve measured between points on the y-axis that are half the maximum amplitude).

[0019] In certain embodiments, the non-Lambertian unitary lens structure is configured to shape optical radiation received from the at least one solid state light emitter to produce focused output radiation having an intensity distribution over an angular range, the intensity distribution having a FWHM value in the range of 40 to 100.

[0020] In certain embodiments, the non-Lambertian unitary lens structure is configured to shape optical radiation received from the at least one solid state light emitter to produce a dispersed output radiation having an intensity distribution over an angular range, the intensity distribution having a FWHM value in the range of 130 to 200.

[0021] In certain embodiments, at least a first portion of the non-Lambertian unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter, and the at least first portion of the non-Lambertian unitary lens structure is bounded by side end surfaces having an orientation configured to cause total internal reflection of a portion of the optical radiation originating from an emission center of the at least one solid state light emitter.

[0022] In certain embodiments, at least one solid state light emitter is disposed within a cavity defined by the elevated reflector structure, and at least a first portion of the non-Lambertian unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter, and at least the first portion of the non-Lambertian unitary lens structure is disposed in contact with a reflective wall of the elevated reflector structure that bounds the cavity.

[0023] In certain embodiments, the elevated reflector structure comprises light-reflecting particles suspended in a binder, the non-Lambertian unitary lens structure comprises a lens material, and the elevated reflector structure and the lens material are substantially matched in coefficient of thermal expansion (CTE) such that the difference in CTE between them is in the range of less than 20%.

[0024] In certain embodiments, the solid state lighting component further comprises a submount to which the at least one solid state light emitter is mounted, and wherein a width of the non-Lambertian unitary lens structure is less than or equal to a width of the submount at a location where the non-Lambertian unitary lens structure is disposed in contact with the at least one solid state light emitter.

[0025] In certain embodiments, the at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein the side end surfaces of the LED chip are free of the lumiphoric material; and the solid state light emitting component further comprises a submount to which the at least one solid state light emitter is mounted; and a filler material layer including a filler material and contacting the side end surfaces of the at least one solid state light emitter, the filler material including white or light-reflecting particles dispersed in a binder, wherein a portion of the lumiphoric material overlaps a portion of the filler material layer.

[0026] In certain embodiments, the lumiphoric material layer, the filler material layer, and the non-Lambertian unitary lens structure have substantially matched coefficients of thermal expansion (CTE) such that the difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the lens material is in the range of less than 20%.

[0027] In certain embodiments, the non-Lambertian unitary lens structure comprises silicone. In another aspect, the present disclosure relates to a solid state light emitting component comprising: at least one solid state light emitter configured to generate light radiation, the at least one solid having an emission center; and a unitary lens structure disposed in contact with the at least one solid state light emitter and configured to receive at least a portion of the light radiation generated by the at least one solid state light emitter, wherein the unitary lens structure has a recess shaped as an inverted pyramid, an inverted cone, or a groove with a base aligned with the emission center, the recess being bounded by one or more sloping walls, an axis extending through the base and the emission center, the one or more sloping walls sloping away from the axis by an angle in a range of 40 to 44 degrees.

[0028] In certain embodiments, the unitary lens structure has one or more light exit surfaces along its lateral edges, and the one or more angled walls are configured to reflect light toward the one or more light exit surfaces.

[0029] In certain embodiments, the unitary lens structure includes a material having a first refractive index, and the recess is substantially filled with a material having a second refractive index that differs from the first refractive index by at least 0.4.

[0030] In certain embodiments, the material having the second refractive index comprises air. In certain embodiments, at least a first portion of the unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter, and the at least first portion of the unitary lens structure is laterally bounded by at least one sloped or curved surface having an orientation configured to cause total internal reflection of a portion of the optical radiation originating from an emission center of the at least one solid state light emitter.

[0031] In certain embodiments, the unitary lens structure defines first and second lobes, and the recess is shaped as a groove disposed between the first and second lobes. In certain embodiments, each of the first and second lobes has a light-emitting surface, at least a portion of the light-emitting surface having an outwardly curved or convex profile.

[0032] In certain embodiments, the solid state light emitting component further comprises a submount to which the at least one solid state light emitter is mounted, and wherein the width of the unitary lens structure is less than or equal to the width of the submount at a location where the unitary lens structure is disposed in contact with the solid state light emitter.

[0033] In certain embodiments, the at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein the side end surfaces of the LED chip are free of the lumiphoric material; and the solid state light emitting component further comprises a submount to which the at least one solid state light emitter is mounted; and a filler material layer including a filler material and contacting the side end surfaces of the at least one solid state light emitter, the filler material including white or light-reflecting particles dispersed in a binder, wherein a portion of the lumiphoric material overlaps a portion of the filler material layer.

[0034] In certain embodiments, the lumiphoric material layer, the filler material layer, and the unitary lens structure have substantially matched coefficients of thermal expansion (CTE) such that the difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the lens material is in the range of less than 20%.

[0035] In another aspect, the present disclosure relates to a solid state lighting component comprising: at least one solid state light emitter disposed on a submount and configured to generate light radiation, the at least one solid state light emitter having an outer surface distal from the submount; and a lens structure disposed over the at least one solid state light emitter and configured to receive at least a portion of the light radiation generated by the at least one solid state light emitter, the lens structure having: a light diffusing portion in contact with the outer surface of the at least one solid state light emitter; and a complex refractive index portion disposed over the light diffusing portion, the complex refractive index portion having a first region having a first refractive index and a second region having a second refractive index different from the first refractive index, the first region covering less than the entire light diffusing portion.

[0036] In certain embodiments, the light diffusing portion of the lens has a width that increases with distance from the at least one solid state light emitter, is configured to cause total internal reflection of a portion of the light radiation emanating from the emissive center of the at least one solid state light emitter, and is laterally bounded by at least one angled or curved surface having an orientation configured to reflect light toward one or more light output surfaces of the lens structure.

[0037] In certain embodiments, the first region of the compound refractive index section comprises glass or sapphire. In certain embodiments, the first region of the compound refractive index section is comprised of air or at least one gas.

[0038] In certain embodiments, the solid state light emitting device further comprises a submount to which the at least one solid state light emitter is mounted, and wherein the width of the unitary lens structure is less than or equal to the width of the submount at a location where the unitary lens structure is disposed in contact with the at least one solid state light emitter.

[0039] In certain embodiments, the at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein the side end surfaces of the LED chip are free of the lumiphoric material; and the solid state light emitting component further comprises a submount to which the at least one solid state light emitter is mounted; and a filler material layer including a filler material and contacting the side end surfaces of the at least one solid state light emitter, the filler material including white or light-reflecting particles dispersed in a binder, wherein a portion of the lumiphoric material overlaps a portion of the filler material layer.

[0040] In certain embodiments, the light diffusing portion of the lens has a width that increases with distance from the at least one solid state light emitter, is configured to cause total internal reflection of a portion of the light radiation emanating from the emissive center of the at least one solid state light emitter, and is laterally bounded by at least one angled or curved surface having an orientation configured to reflect light toward one or more light output surfaces of the lens structure.

[0041] In certain embodiments, the first region of the compound refractive index section comprises glass or sapphire, or the first region of the compound refractive index section is composed of air or at least one gas. In certain embodiments, the solid state light emitting device further comprises a submount to which the at least one solid state light emitter is mounted, and wherein the width of the unitary lens structure is less than or equal to the width of the submount at a location where the unitary lens structure is disposed in contact with the at least one solid state light emitter.

[0042] In certain embodiments, the at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein the side end surfaces of the LED chip are free of the lumiphoric material; and the solid state light emitting component further comprises a submount to which the at least one solid state light emitter is mounted; and a filler material layer including a filler material and contacting the side end surfaces of the at least one solid state light emitter, the filler material including white or light-reflecting particles dispersed in a binder, wherein a portion of the lumiphoric material overlaps a portion of the filler material layer.

[0043] In certain embodiments, the lumiphoric material layer, the filler material layer, and the light diffusing portion of the lens structure have substantially matched coefficients of thermal expansion (CTE) such that the difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the light diffusing portion is in the range of less than 20%.

[0044] In other aspects, any of the above aspects and / or various individual aspects and features described herein may be combined to further advantage. Any of the various features and elements disclosed herein may be combined with one or more other disclosed features and elements, unless otherwise indicated herein.

[0045] Other aspects, features, and embodiments of the present disclosure will become more fully apparent from the ensuing disclosure and appended claims. [Brief explanation of the drawings]

[0046] [Figure 1]FIG. 1 is a simplified cross-sectional view of a first conventional solid state light emitting device including an LED chip supported by a submount, a lumiphoric material layer covering the top surface of the LED chip and the submount and also covering the side surfaces of the LED chip, a reflective material disposed on a portion of the lumiphoric material layer, and an overlaid arrow indicating a selected light beam emitted from the emitting center of the LED chip. [Figure 2] FIG. 1 is a simplified cross-sectional view of a second conventional solid state light emitting device including an LED chip supported by a submount, a lumiphoric material layer covering the top and sides of the LED chip, and a reflective material disposed on the submount and on the side portions of the lumiphoric material layer. [Figure 3A] FIG. 1 is a simplified cross-sectional view depicting a step of utilizing an encapsulation template in the fabrication of at least a portion of a solid state light emitting device (or subassembly) according to one embodiment, wherein the device portion comprises a light-modifying (e.g., lumiphoric) material layer disposed over an upper surface of an LED chip supported by a submount and over a portion of a first fill material layer in contact with a lateral edge of the LED chip, and a second fill material layer in contact with the lateral edge of the lumiphoric material layer. [Figure 3B] FIG. 1 is a simplified cross-sectional view depicting a step of utilizing an encapsulation template in the fabrication of at least a portion of a solid state light emitting device (or subassembly) according to one embodiment, wherein the device portion comprises a light-modifying (e.g., lumiphoric) material layer disposed over an upper surface of an LED chip supported by a submount and over a portion of a first fill material layer in contact with a lateral edge of the LED chip, and a second fill material layer in contact with the lateral edge of the lumiphoric material layer. [Figure 3C]FIG. 1 is a simplified cross-sectional view depicting a step of utilizing an encapsulation template in the fabrication of at least a portion of a solid state light emitting device (or subassembly) according to one embodiment, wherein the device portion comprises a light-modifying (e.g., lumiphoric) material layer disposed over an upper surface of an LED chip supported by a submount and over a portion of a first fill material layer in contact with a lateral edge of the LED chip, and a second fill material layer in contact with the lateral edge of the lumiphoric material layer. [Figure 3D] FIG. 1 is a simplified cross-sectional view depicting a step of utilizing an encapsulation template in the fabrication of at least a portion of a solid state light emitting device (or subassembly) according to one embodiment, wherein the device portion comprises a light-modifying (e.g., lumiphoric) material layer disposed over an upper surface of an LED chip supported by a submount and over a portion of a first fill material layer in contact with a lateral edge of the LED chip, and a second fill material layer in contact with the lateral edge of the lumiphoric material layer. [Figure 3E] FIG. 1 is a simplified cross-sectional view depicting a step of utilizing an encapsulation template in the fabrication of at least a portion of a solid state light emitting device (or subassembly) according to one embodiment, wherein the device portion comprises a light-modifying (e.g., lumiphoric) material layer disposed over an upper surface of an LED chip supported by a submount and over a portion of a first fill material layer in contact with a lateral edge of the LED chip, and a second fill material layer in contact with the lateral edge of the lumiphoric material layer. [Figure 3F] FIG. 1 is a simplified cross-sectional view depicting a step of utilizing an encapsulation template in the fabrication of at least a portion of a solid state light emitting device (or subassembly) according to one embodiment, wherein the device portion comprises a light-modifying (e.g., lumiphoric) material layer disposed over an upper surface of an LED chip supported by a submount and over a portion of a first fill material layer in contact with a lateral edge of the LED chip, and a second fill material layer in contact with the lateral edge of the lumiphoric material layer. [Figure 3G]3F after formation of a lens material having an outwardly curved shape covering the lumiphoric material layer and a portion of the second fill material layer. FIG. [Figure 3H] 3F is a simplified cross-sectional view depicting further steps in fabricating a solid-state light emitting device incorporating the device portion of FIG. 3F, including forming a cavity-defining elevated reflector structure disposed over the second fill material layer, and forming a lens material having an outwardly curved shape in contact with the lumiphoric material layer and the walls of the elevated reflector structure. [Figure 3I] 3F is a simplified cross-sectional view depicting further steps in fabricating a solid-state light emitting device incorporating the device portion of FIG. 3F, including forming a cavity-defining elevated reflector structure disposed over the second fill material layer, and forming a lens material having an outwardly curved shape in contact with the lumiphoric material layer and the walls of the elevated reflector structure. [Figure 4] 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, the device comprising: an LED chip supported by a substrate; a first fill material in contact with lateral boundaries of the LED chip; a lumiphoric material layer in contact with an upper surface of the LED chip and a portion of the first fill material; a cavity-defining elevated reflector structure disposed over the first fill material layer; and a lens material having a substantially hemispherical shape in contact with a wall of the elevated reflector structure and in contact with the lumiphoric material layer, the solid state light emitting device being suitable for producing focused light output radiation. [Figure 5] FIG. 5 is a simplified cross-sectional view of a portion of a solid state light emitting device similar to that shown in FIG. 4, but where the lens material has a flat shape that is substantially aligned with the upper boundary of the elevated reflector structure and is suitable for producing a dispersed light output radiation. [Figure 6]FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with an upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens is bounded by lateral edges having a width that increases with distance from the LED chip and has a lower portion configured to cause total internal reflection of light radiation originating from the emission center of the LED chip, and the upper portion of the lens has a substantially hemispherical shape. [Figure 7A] 7 is a simplified cross-sectional view of a solid state light emitting device according to an embodiment similar to that shown in FIG. 6, but where the top of the lens has a (flattened) partially spherical shape. [Figure 7B] FIG. 7B is a modeled ray-trace diagram illustrating the light beam pattern produced by a solid-state light emitting device according to the design of FIG. 7A. [Figure 8A] FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with the upper surface of the substrate; at least one filler material in contact with the lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens is bounded by lateral edges having a width that increases with distance from the LED chip and has a lower portion configured to cause total internal reflection of light radiation originating from the emission center of the LED chip; and the lens has an upper portion of the lens having a width that decreases with distance to a small radius tip, with a curved profile transition between the lower portion and the upper portion of the lens. [Figure 8B] FIG. 8B is a modeled ray trace diagram illustrating the light beam pattern produced by a solid-state light emitting device according to the design of FIG. 8A. [Figure 9A]FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with the upper surface of the substrate; at least one filler material in contact with the lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens has a lower portion bounded by lateral edges having a width configured to cause total internal reflection of light radiation originating from the emission center of the LED chip; and an upper portion of the lens having a width that decreases with distance from the LED chip and terminates at a flat upper boundary, with a curved profile transition provided at the interface between the upper and lower portions of the lens. [Figure 9B] FIG. 9B is a modeled ray-trace diagram illustrating the light beam pattern produced by a solid-state light emitting device similar to the design of FIG. 9A. [Figure 10] FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with the upper surface of the substrate; at least one filler material in contact with the lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens has a lower portion bounded by lateral edges having a width configured to cause total internal reflection of light radiation originating from the emission center of the LED chip, and an upper portion of the lens having a width that decreases with increasing distance from the LED chip, with a sharp boundary between the upper and lower portions of the lens. [Figure 11A]FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with the upper surface of the substrate; at least one filler material in contact with the lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens has a lower portion bounded by lateral edges having a width configured to cause total internal reflection of light radiation originating from the emission center of the LED chip; an upper portion of the lens has a width that decreases with distance from the LED chip and terminates at a rounded upper boundary; the lower portion has a profile when viewed from above (i.e., a top profile) that appears square; and the upper portion has a circular top profile, with a transition between the square top profile and the circular top profile. [Figure 11B] 11B shows the solid state light emitting device of FIG. 11A superimposed thereon is a partial ray trace diagram showing light beams emitted from three locations along the top surface of the LED chip. [Figure 12] FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with an upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens has a width substantially greater than the width of the substrate, the lens is bounded by lateral edges having widths that increase with distance from the LED chip, the lens has a lower portion configured to cause total internal reflection of light radiation originating from the emission center of the LED chip, and the lens has an upper portion having a substantially hemispherical shape. [Figure 13A]FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with an upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens is bounded by lateral edges having a width that increases with distance from the LED chip along a curved profile and is configured to cause total internal reflection of light radiation originating from the emission center of the LED chip, and the lens further has a flat upper boundary. [Figure 13B] FIG. 13B is a partial ray trace diagram for an ideal lens similar to the lens of the solid state light emitting device of FIG. 13A but with a continuously curved bottom (instead of a truncated curved bottom). [Figure 14A] 13B is a simplified cross-sectional view of a solid state light emitting device according to an embodiment similar to that shown in FIG. 13A and further having a constant width portion of the lens disposed distally from the LED chip. [Figure 14B] FIG. 14B is a partial ray trace diagram of an ideal lens similar to the lens of the solid state light emitting device of FIG. 14A, but with a continuously curved bottom (instead of a truncated curved bottom). [Figure 15]FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with the upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens has a first portion proximate to the LED chip bounded by lateral edges having a width that increases with distance from the LED chip along a curved profile and configured to cause total internal reflection of light radiation originating from the emission center of the LED chip; and a second portion distal to the LED chip bounded by lateral edges having a width that increases with distance from the LED chip along the curved profile, wherein the first and second lens portions are partially or substantially hemispherical in shape. [Figure 16] FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with an upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens defines a conical recess having a point proximate to the LED chip. [Figure 17A] FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with an upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens defines a central recess of variable diameter within its shape, and the angled surfaces of the central recess are configured to cause total internal reflection of light to direct light radiation toward the lateral ends of the lens. [Figure 17B] 17B is a modeled ray trace diagram illustrating the light beam pattern produced by the solid state light emitting device of FIG. 17A when positioned facing upward. [Figure 18A]17B is a cross-sectional view of the solid state light emitting device of FIG. 17A disposed within a cavity of a second reflector structure. [Figure 18B] 18B is a modeled ray trace diagram illustrating the light beam pattern produced by the solid state light emitting device and second reflector structure of FIG. 18A. [Figure 19] FIG. 17B is a modeled ray trace diagram illustrating the light beam pattern produced by a solid state light emitting device similar to that shown in FIG. 17A, but stretched in width and positioned facing downwards. [Figure 20] FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with an upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens has first and second lobes bounding a central groove, each having an outwardly curved light extraction surface. [Figure 21] FIG. 1 is a simplified cross-sectional view of a solid-state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with the upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens has a first portion proximate to the LED chip bounded by lateral edges having a width that increases with distance from the LED chip and is configured to cause total internal reflection of light radiation originating from the emission center of the LED chip; the lens has a second portion distal to the LED chip bounded by lateral edges having a constant width; and the internal region (e.g., air) has a hemispherical shape and a refractive index different from that of the lens material disposed between the first and second portions of the lens. [Figure 22A]FIG. 1 is a simplified cross-sectional view of a solid state light emitting device according to one embodiment, comprising: an LED chip supported by a substrate; a lumiphoric material layer in contact with the upper surface of the substrate; at least one filler material in contact with lateral boundaries of the LED chip and the lumiphoric material layer; and a unitary lens structure disposed in contact with the lumiphoric material layer and the at least one filler material, wherein the lens is bounded by lateral edges having a width that increases with distance from the LED chip and has a first portion proximate to the LED chip configured to cause total internal reflection of light radiation originating from the emission center of the LED chip; the lens has a second portion distal to the LED chip having a sawtooth-shaped sidewall profile; and the lens defines a central recess therein extending to a bottom proximate to the LED chip. [Figure 22B] 22B is a first modeled ray trace diagram illustrating the sparse pattern of a light beam produced by the solid state light emitting device of FIG. 22A. [Figure 23A] Plots of the viewing angle (full width at half maximum degrees) are provided for several samples of a solid-state light emitting device ("V9Flat") having a flat lens, reflector cavity, LED chip, and lumiphoric material arrangement according to Figure 5, and for several samples of a comparative device ("XPGB+") having a hemispherical lens arrangement deposited on a base structure comprising a lumiphoric material (similar to Figure 1) disposed on the side end face of the LED chip and between the submount and the reflective filler material. [Figure 23B] Bivariate fits of intensity (in candelas) as a function of viewing angle (theta) are provided for the same FIG. 23A solid state lighting device and comparative device. [Figure 23C] 23A provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 23A. [Figure 24A]Plots of the viewing angle (full width at half maximum angle) are provided for several samples of a solid-state light emitting device ("V29") according to Figure 11A, and for several samples of a comparative device ("XPGB+") with a similar lens arrangement but with lumiphoretic material (similar to Figure 1) disposed on the side end face of the LED chip and between the submount and the reflective fill material. [Figure 24B] The viewing angle average and standard deviation values are provided for the same FIG. 24A solid state light emitting device and comparative device. [Figure 24C] 24A provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 24A. [Figure 24D] For the same solid state lighting device of Figure 24A and the comparative device, a bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) obtained from the intensity data plotted in Figure 24C is provided. [Figure 25A] Plots of the viewing angle (full width at half maximum angle) are provided for several samples of solid-state light emitting devices ("V41V40") with an outwardly curved lens and lumiphoric material arrangement according to Figure 7A, and for several samples of a comparative device ("XPGB+") with a similar lens arrangement but with lumiphoric material (similar to Figure 1) disposed on the side end face of the LED chip and between the submount and the reflective filler material. [Figure 25B] The viewing angle average and standard deviation values are provided for the same FIG. 25A solid state light emitting device and comparative device. [Figure 25C] 25A provides a bivariate fit of luminous flux corrected by color point (CCx) for the same solid state lighting device and comparative device of FIG. 25A. [Figure 25D] 25A provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 25A. [Figure 25E]For the same solid state lighting device of Figure 25A and the comparative device, a bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) obtained from the intensity data plotted in Figure 26D is provided. [Figure 25F] 25A provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 25A. [Figure 26A] Plots of the viewing angle (full width at half maximum angle) are provided for several samples of a solid-state light emitting device ("V24InvCone") having a conical recess defined in a unitary lens positioned over the LED chip and lumiphoric material arrangement according to Figure 17A, and for several samples of a comparative device ("XPGB+") having a similar lens arrangement but with lumiphoric material (similar to Figure 1) positioned on the side end face of the LED chip and between the submount and the reflective filler material. [Figure 26B] 26A provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 26A. [Figure 26C] A bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) is provided for the same FIG. 26A solid state lighting device and comparative device. [Figure 26D] 26A provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 26A. [Figure 27A] Plots of the viewing angle (full width at half maximum angle) are provided for several samples of a solid-state light emitting device ("V8Dome") having a hemispherical lens, reflector cavity, LED chip, and lumiphoric material arrangement according to Figure 4, and for several samples of a comparative device ("XPGB+") having a hemispherical lens arrangement deposited on a base structure having lumiphoric material (similar to Figure 1) disposed on the side end face of the LED chip and between the submount and the reflective filler material. [Figure 27B]The viewing angle average and standard deviation values are provided for the same FIG. 27A solid state lighting device and comparative device. [Figure 27C] 27A provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 27A. [Figure 27D] 27A provides a bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 27A. [Figure 27E] 27A provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid state lighting device and comparative device of FIG. 27A. DETAILED DESCRIPTION OF THE INVENTION

[0047] [Detailed explanation] The embodiments described below present the necessary information to enable one skilled in the art to practice the embodiments and illustrate the best modes of practicing the embodiments. Upon reading the following description in light of the accompanying drawings, one skilled in the art will understand the concepts of the present disclosure and will recognize applications of these concepts not specifically addressed herein. These concepts and applications are to be understood as being within the scope of this disclosure and the appended claims.

[0048] As used herein, terms such as first, second, etc. may be used to describe various elements, but it will be understood that these elements should not be limited by these terms. These terms are merely used to distinguish one element from another. For example, a first element could be referred to as a second element, and similarly, a second element could be referred to as the first element, without departing from the scope of the present disclosure. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0049] For example, when an element, such as a layer, region, or substrate, is referred to as being "on" or extending "onto" another element, it will be understood that the element may be directly on or extending directly onto the other element, or intervening elements may be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there are no intervening elements. Similarly, when an element, such as a layer, region, or substrate, is referred to as being "over" or extending "over" another element, it will be understood that the element may directly cover or extend directly over the other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly over" or extending "directly over" another element, there are no intervening elements. When an element is referred to as being "connected" or "coupled" to another element, the element may be directly connected or coupled to the other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.

[0050] For example, relative terms such as "below" or "above," or "upper" or "lower," or "horizontal" or "vertical" may be used herein to describe the relationship of one element, layer, or region to another element, layer, or region, as shown in the figures. It will be understood that these terms, and those described above, are intended to encompass various orientations of the device in addition to the orientation depicted in the figures.

[0051] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms unless the context clearly indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes," and / or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0052] Unless otherwise specified, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted to have a meaning consistent with their meaning in the context of the present specification and the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0053] Embodiments are described herein with reference to schematic diagrams of embodiments of the present disclosure. Therefore, actual dimensions of layers and elements may vary, and variations from the shapes of the illustrations may occur, for example, as a result of manufacturing techniques and / or tolerances. For example, regions shown or described as square or rectangular may have curvilinear or curved shapes, and regions shown as straight lines may have some irregularities. Therefore, regions shown in the figures are schematic, and their shapes are not intended to represent the exact shape of a region of a device, and are not intended to limit the scope of the present disclosure. Furthermore, the size of structures or regions may be exaggerated relative to other structures or regions for illustrative purposes, and therefore are provided to show the general structure of the present subject matter, and may or may not be drawn to scale. Herein, common elements between figures may be designated with common element numbers and may not be described again later.

[0054] Before delving into the specific details of various aspects of the present disclosure, a brief overview of the various elements that may be included in an exemplary LED of the present disclosure is provided for context. LED chips typically include an active LED structure or region that may include a number of different semiconductor layers arranged in various ways. The fabrication and operation of LEDs and their active structures are generally well known in the art and will only be briefly described herein. The layers of the active LED structure can be fabricated using well-known processes, including suitable fabrication processes using metalorganic chemical vapor deposition. The layers of the active LED structure can include a number of different layers, generally including an active layer sandwiched between oppositely doped n-type and p-type epitaxial layers, all of which are formed sequentially on a growth substrate. It is understood that additional layers and elements may also be included in the active LED structure, including, but not limited to, buffer layers, nucleation layers, superlattice structures, undoped layers, cladding layers, contact layers, and current spreading and light extraction layers and elements. The active layer may include a single quantum well, multiple quantum wells, double heterostructure, or superlattice structure.

[0055] Active LED structures can be fabricated from different material systems, some of which are based on III-nitrides. III-nitrides refer to semiconductor compounds formed between nitrogen (N) and elements in Group III of the periodic table, typically aluminum (Al), gallium (Ga), and indium (In). Gallium nitride (GaN) is a common binary compound. III-nitrides also refer to ternary and quaternary compounds, such as aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), and aluminum indium gallium nitride (AlInGaN). For III-nitrides, silicon (Si) is a common n-type dopant, and magnesium (Mg) is a common p-type dopant. Thus, the active layer, n-type layer, and p-type layer may comprise one or more layers of GaN, AlGaN, InGaN, and AlInGaN, undoped or doped with Si or Mg, as in III-nitride-based material systems. Other material systems include silicon carbide (SiC), organic semiconductor materials, and other III-V systems such as gallium phosphide (GaP), gallium arsenide (GaAs), indium phosphide (InP), and related compounds.

[0056] Active LED structures may be grown on growth substrates that can include a number of materials, such as sapphire, SiC, aluminum nitride (AlN), GaN, GaAs, glass, or silicon. SiC has certain advantages, such as a more closely matched crystal lattice with III-nitrides than other substrates, resulting in high-quality III-nitride films. SiC also has very high thermal conductivity, so that the total output power of III-nitride devices on SiC is not limited by the heat dissipation capabilities of the substrate. Sapphire is another common substrate for III-nitrides, and it also has certain advantages, including lower cost, an established manufacturing process, and good light-transmissive optical properties.

[0057] Different embodiments of the active LED structure may emit light of different wavelengths, depending on the composition of the active layer and the n-type and p-type layers. In some embodiments, the active LED structure emits blue light with a peak wavelength range of approximately 430 nanometers (nm) to 480 nm. In other embodiments, the active LED structure emits green light with a peak wavelength range of 500 nm to 570 nm. In other embodiments, the active LED structure emits red light with a peak wavelength range of 600 nm to 650 nm. In certain embodiments, the active LED structure may be configured to emit light outside the visible spectrum, including one or more regions of the ultraviolet (UV) spectrum.

[0058] The LED chip may also be coated with one or more lumiphoric materials (also referred to herein as lumiphores), such as phosphors, so that at least some light from the LED chip is absorbed by the one or more lumiphores and converted to one or more different wavelength spectra according to the characteristic emissions from the one or more lumiphores. In this regard, at least one lumiphore that receives at least a portion of the light generated by the LED source may re-emit light having a different peak wavelength than the LED source. The LED source and one or more lumiphoric materials may be selected so that their combined output provides light having one or more desired characteristics, such as color, color point, intensity, spectral density, etc. In certain embodiments, the aggregate emissions of the LED chip, optionally combined with one or more lumiphoric materials, may be configured to provide cool white, neutral white, or warm white, such as within a color temperature range of 2500 Kelvin (K) to 10,000 K. In certain embodiments, lumiphoric materials having peak wavelengths of cyan, green, amber, yellow, orange, and / or red may be used. In certain embodiments, the combination of the LED chip and one or more lumiphores (e.g., phosphors) emits a nearly white combination of light. The one or more phosphors may be yellow (e.g., YAG:Ce), green (e.g., LuAg:Ce), and red (e.g., Ca i-x-y Sr x EU y In other embodiments, the LED chip and corresponding lumiphoric material may be configured to emit the converted light primarily from the lumiphoric material, such that the total emission contains little or no appreciable emission corresponding to the LED chip itself.

[0059] Lumiphoric materials as described herein may be or include one or more of phosphors, scintillators, lumiphoric inks, quantum dot materials, daylight tape, and the like. Lumiphoric materials may be provided by any suitable means, such as coating directly on one or more surfaces of the LED, diffusing within an encapsulant configured to cover one or more LEDs, and / or coating on one or more optical or support elements (e.g., by powder coating, inkjet printing, or the like). In certain embodiments, lumiphoric materials may be downconverting or upconverting, or a combination of both downconverting and upconverting materials may be provided. In certain embodiments, multiple different (e.g., compositionally distinct) lumiphoric materials arranged to produce different peak wavelengths may be arranged to receive radiation from one or more LED chips. One or more lumiphoric materials may be provided in various shapes on one or more portions of the LED chip. In certain embodiments, one or more lumiphoric materials may be disposed on or over one or more surfaces of the LED chip in a substantially uniform manner. In other embodiments, one or more lumiphoric materials may be disposed on or over one or more surfaces of the LED chip in a non-uniform manner with respect to one or more of material composition, concentration, and thickness. In certain embodiments, the loading percentage of one or more lumiphoric materials may be varied on or between one or more outer surfaces of the LED chip. In certain embodiments, one or more lumiphoric materials may be patterned on a portion of one or more surfaces of the LED chip to include one or more stripes, dots, curves, or polygonal shapes. In certain embodiments, multiple lumiphoric materials may be disposed on or over the LED chip in different discrete regions or layers.

[0060] As used herein, a layer or region of a light-emitting device may be considered "transparent" when at least 80% of the emitted radiation striking that layer or region emerges through the layer or region. Additionally, as used herein, a layer or region of an LED may be considered "reflective" or embody a "mirror" or "reflector" when at least 80% of the emitted radiation striking that layer or region is reflected. In some embodiments, the emitted radiation includes visible light, such as blue and / or green LEDs, with or without lumiphoric materials. In other embodiments, the emitted radiation may include non-visible light. For example, in the context of GaN-based blue and / or green LEDs, silver (Ag) may be considered a reflective material (e.g., at least 80% reflective). In the case of UV LEDs, appropriate materials may be selected to provide desired, in some embodiments high, reflectivity and / or desired, in some embodiments low, absorption. In certain embodiments, a "light-transmitting" material may be configured to transmit at least 50% of the emitted radiation of a desired wavelength.

[0061] An LED package, in which one or more LED chips are mounted on a support member such as a submount or leadframe, may include one or more elements, such as a lumiphoric material and electrical contacts, among others. Suitable materials for the submount include, but are not limited to, ceramic materials such as aluminum oxide or alumina, AlN, or organic insulators such as polyimide (Pl) and polyphthalamide (PPA). In other embodiments, the submount may comprise a printed circuit board (PCB), sapphire, Si, or any other suitable material. For PCB embodiments, various PCB types may be used, such as standard FR-4 PCBs, metal-core PCBs, or any other type of PCB. In still further embodiments, the support structure may be embodied in a leadframe structure. A light-modifying material may be disposed within the LED package to reflect or redirect light from one or more LED chips in a desired emission direction or pattern.

[0062] As used herein, the term "light-modifying material" can include many different materials, including light-reflecting materials that reflect, redirect, and scatter light, light-absorbing materials that absorb light, lumiphoric materials, and materials that act as thixotropic agents. As used herein, the term "light-reflecting" refers to materials or particles that reflect, refract, scatter, or redirect light. With respect to light-reflecting materials, the light-modifying material may include at least one of fused silica, fumed silica, titanium dioxide (TiO), or metal particles suspended in a binder, such as silicone or epoxy. In certain embodiments, the particles may have a refractive index configured to refract light radiation in a desired direction. In certain embodiments, light-reflecting particles may also be referred to as light-scattering particles. The weight ratio of light-reflecting or scattering particles to binder may range from about 0.15:1 to about 0.5:1, or from about 0.5:1 to about 1:1, or from about 1:1 to about 2:1, depending on the desired viscosity before curing. With respect to light-absorbing materials, the light-modifying material may include at least one of carbon, silicon, or metal particles suspended in a binder, such as silicone or epoxy. The light-reflecting and light-absorbing materials may include nanoparticles. In certain embodiments, the light-modifying material may be configured in a substantially white color to reflect and redirect light. In other embodiments, the light-modifying material may be configured in a substantially opaque color, such as black or gray, to absorb light and increase contrast. In certain embodiments, the light-modifying material includes both light-reflecting and light-absorbing materials suspended in a binder.

[0063] According to various embodiments, a solid-state light emitting device disclosed herein includes a lens structure disposed over a base or subassembly, the base or subassembly including at least one solid-state emitter mounted on a submount, with at least one fill material contacting a lateral edge of the at least one solid-state emitter. The at least one solid-state emitter may include an LED chip mounted on the submount, or may include an LED chip covered with a lumiphoric material and mounted on the submount. In the latter case, the LED is mounted on a submount having a first surface, a lumiphoric material layer is applied over the entire outer surface of the at least one LED distal to (i.e., opposite) the first surface, the lateral edges of the at least one LED are free of lumiphoric material, and the at least one fill material layer contacts the lateral surface of the at least one LED (wherein the fill material layer may also contact a lateral boundary of the lumiphoric material layer). In certain embodiments, the base portion or subassembly may be manufactured by steps including applying a filler material layer to contact a lateral surface of at least one LED to be mounted on the submount; adhering an encapsulation template on or over the filler material; applying lumiphoric material through a window defined in the encapsulation template to form a light-modifying material layer on the at least one LED; and removing the encapsulation template from the filler material.

[0064] Previous templates (e.g., stencil templates, 3D printing templates, and the like) used or tested by applicant have suffered from various drawbacks that limit their usefulness, such as a tendency to allow light-modifying material to pass between the template and the underlying layer or to cause the light-modifying material to stick to the template walls, resulting in poor control of the areas where the light-modifying material will remain on the underlying layer, etc. However, locally depositing phosphor material over an LED disposed on a substrate without the use of a template is also difficult because surface effects (e.g., surface tension, which tends to cause meniscus formation) tend to prevent the phosphor mixture from covering the entire emitting area of the LED (including its corners) and / or tend to form a dome-shaped phosphor deposit of non-uniform thickness (i.e., thicker in the center of the LED chip than near its edges).

[0065] In certain embodiments, the sealing template comprises a carrier layer (e.g., a film) and an adhesive layer, which may be provided in the form of an adhesive tape. In certain embodiments, the carrier layer may be configured to transmit ultraviolet (UV) spectrum radiation, and the adhesive layer may include a UV-release adhesive that exhibits a reduction or loss of tack upon exposure of the adhesive to UV spectrum radiation. One or more windows may be defined in the sealing template by any suitable method, such as laser cutting, blade cutting, stamping, pressing, or the like.

[0066] In certain embodiments, the window-defining template may be applied to an underlying layer (e.g., with a window in the template aligned with one or more LEDs supported by the underlying layer) by pressing with sufficient force to engage the adhesive layer with the underlying layer. The lumiphoric material may then be applied through the window (e.g., by spraying, dispensing, jet pumping, or other deposition method). In certain embodiments, the sealing template may have a thickness substantially equal to the desired deposition thickness of the lumiphoric material. In some cases, any excess thickness of the lumiphoric material may be removed by dragging a scooping member (e.g., a silicone or rubber blade, such as a squeegee) across the outer surface of the sealing template.

[0067] After deposition of the lumiphoric material, the template may be exposed to UV radiation so that the adhesive layer of the template exhibits reduced tack. The template may then be removed from the underlying layer by peeling (e.g., from its edges) the lumiphoric material already deposited through the window in the template, leaving it on the target surface after the template is removed. The ability to reduce the tack of the adhesive layer after material deposition allows the sealing template to be cleanly removed from the underlying layer without leaving adhesive residue or causing unintended removal of lumiphoric material that would otherwise be laterally adhered along the window edges of the sealing template. Applying lumiphoric material only to intended areas may facilitate achieving a uniform color point across the entire emission region and improve brightness levels and / or uniformity. In certain embodiments, multiple layers of lumiphoric material may be applied sequentially to the same (overlapping) or different (non-overlapping) areas, including through a single window in the sealing template or through different windows defined in a multi-window sealing template.

[0068] After formation of a base portion or subassembly incorporating at least one solid-state light emitter, and possibly after an elevated reflector structure is formed on the base portion or subassembly, a lens may be formed or applied over the solid-state light emitter and any surrounding filler material layer. In certain embodiments, the lens may be formed directly on the base portion or subassembly by molding, three-dimensional printing, jet pumping, localized dispensing, or the like. In certain embodiments, an elevated reflector structure defining a cavity may be formed over the base portion or subassembly, and at least a portion of the lens may be deposited within the cavity. In certain embodiments, the lens may be prefabricated in one or more parts (e.g., by molding, cleaving, cutting, machining, or other manufacturing method) and applied to the base portion or subassembly, together or individually, with a suitable adhesive (e.g., optical-grade silicone adhesive). In certain embodiments, some or all of the lens may comprise silicone and may be manufactured by techniques such as molding. In certain embodiments, some or all of the lens may comprise an amorphous or crystalline hard material (e.g., glass, sapphire, or the like) and may be fabricated by cleaving, cutting, or machining and then bonded to an underlying structure. In certain embodiments, at least a portion of the lens may be pre-fabricated and applied to an underlying base material or subassembly, and a molding step may be performed thereafter to facilitate attachment and / or form any additional molding features, the method described above may be referred to as "pick and place and mold." In certain embodiments, at least a portion of a pre-fabricated lens may be applied to an underlying base material or subassembly and then dipped (e.g., along at least its lower periphery) into silicone or silicone doped with titanium dioxide or another reflective material, the method described above may be referred to as "pick and place and flood."The "pick and place and flood" approach may advantageously avoid the formation of any mold flash and therefore facilitate improved manufacturability.

[0069] In certain embodiments, the lens is unitary in nature, i.e., it embodies a single, continuous structure. In certain embodiments, a unitary lens is fabricated as one piece, while in certain other embodiments, a unitary lens may be fabricated as multiple pieces that are joined (e.g., cemented or glued) together. In certain embodiments, a unitary lens is non-Lambertian. A Lambertian lens tends to diffuse or scatter light equally in all directions, instead of directing light in a specular direction. The apparent brightness or brilliance of a Lambertian surface to an observer is the same regardless of the observer's viewing direction or angle. In this regard, a non-Lambertian lens serves to direct light in a specular direction without diffusing it in all directions.

[0070] In certain embodiments, the lens incorporates one or more surfaces (e.g., angled or curved surfaces) configured to cause total internal reflection (TIR) of a portion of the optical radiation originating from the radiative center of at least one solid-state light emitter of the solid-state light-emitting component and to direct the light toward one or more light-emitting surfaces of the solid-state light-emitting component. TIR is an optical phenomenon in which a wave arriving at an interface (or boundary) from a first medium to another, second medium is not refracted into the second medium but is completely reflected back into the first medium. TIR occurs when the second medium has a lower refractive index than the first medium, and the wave is incident on the interface between the media at a sufficiently oblique angle (known as the critical angle). As some examples, optical-grade silicone and glass have refractive indices of approximately 1.5, air has a refractive index of approximately 1, and water has a refractive index of approximately 1.33. The first and second media may be independently selected from solids, liquids, and gases. For visible light, the critical angle is about 49° for incidence from water to air, about 42° for incidence from ordinary glass to air, and about 41.8° for incidence from optical grade silicone to air. In certain embodiments, one or more surfaces of a lens configured to produce TIR of the radiation of a solid state light emitter are bounded by air or by a solid material having a refractive index different from that of the lens material.

[0071] In certain embodiments, at least a first portion of the lens proximate at least one solid-state light emitter has a width that increases with distance from the solid-state light emitter. Such a portion of the lens may constitute a light diffusion region. In certain embodiments, additional (e.g., second, third, etc.) portions of the lens that provide different light directing or shaping functions may be provided (e.g., coupled) to the first portion.

[0072] In certain embodiments, the angled or curved surface of the lens configured to cause TIR of the solid state light emitter radiation includes a peripheral edge surface of at least a first portion of the lens (i.e., has a width that increases with distance from the solid state light emitter).

[0073] In certain embodiments, the unitary lens structure defines a recess, and a sloped or curved surface of the lens configured to cause TIR of the solid-state light emitter's radiation bounds at least a portion of the recess or groove. In such embodiments, the sloped or curved surface of the lens may be configured to direct light radiation toward one or more light exit surfaces disposed at lateral ends (e.g., sides) of the lens structure. While recesses of various shapes are within the scope of the present disclosure, in certain embodiments, the recess may be shaped as an inverted pyramid, an inverted cone, or a groove (e.g., having a substantially V- or U-shaped cross-section). The recess may be formed by any suitable method, such as molding, machining, waterjet cutting, laser ablation, chemical processing, or the like.

[0074] In certain embodiments, the unitary lens structure may have a first portion proximate the solid state light emitter and having a width that increases with distance from the solid state light emitter, the unitary lens structure further defining a recess, a first sloped or curved surface configured to cause TIR of the solid state emitter radiation may be provided on a peripheral end surface of the first portion, and a second sloped or curved surface configured to cause TIR of the solid state emitter radiation may be disposed to bound the recess.

[0075] In certain embodiments, the unitary lens structure is disposed in physical contact with at least one solid state light emitter (e.g., either the face of the LED chip or a lumiphoric material layer coated on the LED chip, possibly separated by one or more optically transparent material layers). Because such optics generally do not directly contact the solid state light emitter, the above-described feature provides one basis for differentiation from the second optics of conventional solid state devices. In certain embodiments, the solid state light emitters are mounted on a submount, and the unitary lens has a width equal to or less than the width of the submount at the chip mounting region where the unitary lens structure is disposed in contact with the at least one solid state light emitter. This provides another basis for differentiation from conventional second optics, which are generally wider than the associated solid state light emitting component. In certain embodiments, the unitary lens structure is substantially coefficient of thermal expansion (CTE) matched to underlying items, such as the lumiphoric material layer and / or the filler material layer, such that the difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the lens material is in the range of less than 20%. In certain embodiments, substantial CTE matching may be achieved by forming the lens material, lumiphoric material, and filler material from the same base material (e.g., a binder material such as silicone, epoxy, or another polymeric material), where the lumiphoric material layer may include lumiphoric particles dispersed in the binder material, the filler material may include reflective particles dispersed in the binder material, and the lens material may consist essentially of the binder material without light-modifying particles therein. This CTE matching may improve the reliability and service life of high-brightness solid-state light emitting devices. Substantial CTE matching between the lens material and the underlying layer provides another potential basis for differentiation from conventional second optics.

[0076] To provide context for the embodiments described herein, a conventional solid state light emitting device will be described in conjunction with FIGS. 1 and 2 before the embodiments of the present disclosure are described in connection with the remaining drawings. 1 is a simplified cross-sectional view of a first conventional solid-state light emitting device 10 including an LED chip 16 supported by a submount 12, with a first lumiphoric material layer portion 20 in contact with a top or outer surface 18 of the LED chip 16, a second lumiphoric layer portion 20A in contact with a side edge 19 of the LED chip 16, and a third lumiphoric layer portion 20B extending away from the LED chip 16 in contact with a portion of the first (top) surface 14 of the submount 12. During fabrication of the device 10, lumiphoric material may be applied over the outer and side edges 18, 19 of the LED chip 16 and over the submount 12 before a reflective material 25 is applied. The submount 12 (which may embody a substrate) has a second (bottom) surface 13 opposite the first surface 14 in contact with the LED chip 16. The reflective material 25 is disposed adjacent to the side of the LED chip 16, in contact with the second lumiphoric layer portion 20A and the third lumiphoric layer portion 20B. While light is generally emitted omnidirectionally from the LED chip 16, three light beams (i.e., B ) are emitted from the center point of the LED chip at low, medium, and high emission angles α1, α2, and α3. α1 ,B α2 , and B α3 ) are shown in FIG. 1. Light beam B with low radiation angle α1 α1 The light beam B having a medium emission angle α2 can be wavelength-converted in the third lumiphoric layer portion 20B and trapped between the submount 14 and the third lumiphoric layer portion 20B without emitting from the light-emitting device 10. α2 The light beam B having a high emission angle α3 can be wavelength converted by the second lumiphoric layer portion 20A and reflected by the reflective material 25 back to the LED 16, or can be reflected by the reflective material 25 outward through the first lumiphoric layer portion 20. α3 may be wavelength converted in the first lumiphoric layer portion 20 before exiting the light emitting device 10 , the first lumiphoric layer portion 20 defining the light emitting surface of the device 10 .

[0077] 2 is a simplified cross-sectional view of a second conventional solid state light emitting device 11 including an LED chip 16 supported by a submount 12, with a first lumiphoric material layer portion 20 in contact with a top or outer surface 18 of the LED chip 16 and a second lumiphoric layer portion 20A in contact with a side end surface 19 of the LED chip 16. The submount 12 (which may embody a substrate) has a second (bottom) surface 13 opposite a first surface 14 of the submount 12 that contacts the LED chip 16. A reflective material 25 is disposed laterally adjacent the LED chip 16, in contact with the second lumiphoric layer portion 20A and a portion of the top surface. The absence of lumiphoric material between the submount 12 and the reflective material 25 eliminates photon trapping between the submount 12 and the reflective material 25 (thereby improving the luminous efficiency of the solid-state light emitting device 11 relative to the device 10 illustrated in FIG. 1 ); however, the presence of the second lumiphoric material portion 20A still results in suboptimal luminous efficiency.

[0078] 1 and 2, solid state light emitting devices according to various embodiments of the present disclosure include a lens structure disposed over a base structure or subassembly comprising at least one solid state light emitter, where lumiphoric material, if present, is deposited over the top surface of the LED chip, and the side surfaces of the LED chip are in contact with the reflective material and are free of lumiphoric material. This configuration may be achieved by utilizing an encapsulation template to apply the lumiphoric material during fabrication of the base structure, prior to application or formation of the lens structure.

[0079] 3A-3F are simplified cross-sectional views depicting steps of utilizing an encapsulation template in fabricating at least a base or subassembly portion of a solid state light emitting device according to one embodiment.

[0080] 3A shows an LED chip 16 mounted on a first (top) surface 14 of a submount 12, with the LED chip 16 having a top or outer surface 18 (disposed distally from the first surface 14 of the submount 12) and side end surfaces 19. In certain embodiments, the LED chip 16 may have a flip-chip configuration, and mounting the LED chip 16 on the first surface 14 of the submount may include making electrical connections between anode and cathode contacts (not shown) of the LED chip 16 and contact pads (not shown) of the submount 12.

[0081] FIG. 3B shows the item of FIG. 3A after adding a layer of filler material 30 over the submount 12 so as to contact the side end surface 19 of the LED chip 16, leaving the top or outer surface 18 of the LED chip 16 exposed. In certain embodiments, the filler material 30 includes a reflective material, such as white (e.g., titanium dioxide or TiO) particles contained in a silicone binder. The filler material layer 30 may be applied by any suitable method, such as jet pumping, screen printing, dispensing, spraying, or the like, optionally followed by a skimming step (e.g., with a rubber blade or squeegee) to remove excess filler material thickness. In certain embodiments, the filler material layer 30 has a lower boundary 31 in contact with the submount 12 and an upper boundary 32 disposed at substantially the same height or level as the top surface 18 of the LED chip 16. In certain embodiments, one or more second components (e.g., electrostatic discharge diodes) (not shown) having a height less than that of the LED chip 16 may also be supported by the submount 12 and may be encapsulated within the fill material layer 30. As shown in FIG. 3B , in certain embodiments, the upper boundary 32 of the fill material 30 may be substantially flush with the exposed outer surface 18 of the LED chip 16 to create a continuous plane.

[0082] 3C shows the item of FIG. 3B after the addition of an encapsulation template 35, which includes a carrier layer 36 and an adhesive layer 37 covering the filler material layer 30. The encapsulation template 35 may be applied by pressing with a flat member and / or one or more rollers (not shown). The encapsulation template 35 defines a window 38 (e.g., a pre-cut window) larger than but generally aligned with the LED chip 16, which also overlaps the LED-adjacent portion 32A of the filler material layer 30. In certain embodiments, the carrier layer 36 includes a material that transmits radiation in the UV spectrum, and the adhesive layer 37 includes a UV-releasing adhesive material. The top or outer surface 18 of the LED chip 16 is exposed through the window 38 defined in the encapsulation template 35.

[0083] 3D shows the item of FIG. 3C after application (using deposition apparatus 39) of a lumiphoric material layer 40 deposited on the top or outer surface 18 of the LED chip 16 through a window defined in template 35. As shown, the lumiphoric material layer 40 is disposed over the entire outer surface 18 of the LED chip and also overlaps the LED-adjacent top surface portion 32A of the filler material layer 30, such that the lumiphoric material layer 40 is wider than the top or outer surface 18 of the LED chip 16. Providing the lumiphoric material layer 40 wider than the top or outer surface 18 of the LED chip 16 ensures that no portion of the LED chip 16's emission (including from its upper corners) escapes without interacting with the lumiphoric material layer 40, thereby enhancing the uniformity of the resulting emission color point across the emission area of the solid-state light emitting device. In certain embodiments, the lumiphoric material layer 40 comprises a lumiphoric material (e.g., about 66% by weight of exemplary lumiphoric material) in a silicone binder. Any suitable method, such as, for example, spraying, dispensing, jet pumping, and the like, may be used to apply the lumiphoric material layer 40. Optionally, any excess thickness of lumiphoric material 40 may be removed by dragging a skimming member (not shown) across the carrier layer 36 of the sealing template 35. Following application of the lumiphoric material 40, such material may be cured and hardened, such as, for example, by heat, electromagnetic radiation, and / or other means.

[0084] Although only a single lumiphoric material layer 40 is shown, it will be appreciated that multiple lumiphoric material layers may be applied sequentially to the same (overlapping) area or different (non-overlapping) areas, including through a single window in the sealing template or through different windows defined in a multi-window sealing template.

[0085] After (or during) curing of the lumiphoric material, UV radiation from an external source (not shown) may be applied to the sealing template 35 to reduce the tack of the adhesive layer 37. The sealing template 35 may then be removed (e.g., by mechanical peeling) from the fill material 30. Reducing the tack of the adhesive layer 37 prior to removal of the sealing template 35 advantageously reduces the likelihood of leaving adhesive residue on the underlying fill material 30 and also reduces the likelihood that the lumiphoric material 40 will remain laterally adhered to the boundaries of the windows 38 defined in the sealing template 35, such that when the sealing template 35 is removed from the underlying fill material 30, no portion of the lumiphoric material 40 is removed, leaving clean lateral edges 41 of the lumiphoric material 40. 3E shows the item of FIG. 3D after removal of encapsulation template 35, with lumiphoric material overlying not only the LED-adjacent top surface portion 32A of filler material layer 30, but also the entire top or outer surface 18 of LED chip 16, while the remaining top surface portion 32B of filler material layer 30 is exposed. As shown, the side edge surface 19 of LED chip 16 is completely covered with filler material 30 and is free of lumiphoric material, and no lumiphoric material is provided between filler material 30 and submount 12.

[0086] FIG. 3F shows the items of FIG. 3E after adding a second fill material 45 to contact the lateral edges 41 of the lumiphoric material 40 (overlying the outer surface 18 of the LED chip 16 and the LED-adjacent top surface portion of the fill material layer 30) and to contact the remaining top surface portion 32B of the fill material layer 30 to produce a solid state light emitting device portion or subassembly 50. In certain embodiments, the second fill material layer 45 includes a reflective material (e.g., about 15% titanium dioxide, by weight of an exemplary titanium dioxide, in a silicone binder). In certain embodiments, the second material layer 45 has a height substantially identical to that of the light modifying material layer 40. In certain embodiments, the second fill material layer 45 has substantially the same composition as the (first) fill material layer 30. In certain embodiments, the second fill material layer 45 and the fill material layer 30 each include a reflective material in a binder, and the fill material layers 30, 45 may have the same or different reflectance values. In certain embodiments, second filler material layer 45 comprises a reflective and / or scattering material in a binder (e.g., silicone), and filler material layer 30 comprises a reflective material in a binder (e.g., silicone). Second filler material layer 45 may, in certain embodiments, serve to scatter and / or reflect light that leaks through lateral boundaries 41 of light modifying material layer 40, such that a desired beam cutoff pattern and / or improved light-emitting efficiency may be achieved. Solid state light emitting subassembly 50 is suitable for forming a variety of solid state light emitting devices comprising a lens in contact with a lumiphoric material layer (with or without any transparent layer therebetween), and such a lens may optionally be held in a reflector cavity of various sizes and shapes.

[0087] 3F , in certain embodiments, submount 12 comprises a ceramic material, LED chip 16 comprises a semiconductor material (e.g., a III-nitride material on a sapphire or silicon carbide substrate), and the remaining layers of solid state light emitting subassembly 50 (including filler material layer 30, lumiphoric material layer 40, and second filler material layer 45) have substantially matched coefficient of thermal expansion (CTE) characteristics, where “substantially matched” CTE characteristics may embody a difference in CTE between the layers of less than 20%, less than 15%, less than 10%, less than 5%, or less than 2%. In certain embodiments, filler material layer 30, lumiphoric material layer 40, and second filler material layer 45 may comprise the same binder (e.g., silicone) to which particles of the same or different compositions are added at the same or different concentrations. Optionally, in certain embodiments, a transparent (transmissive) layer may be provided over second filler material layer 45 and lumiphoric material layer 40.

[0088] 3G illustrates a solid-state light emitting component 51 comprising the solid-state light subassembly 50 of FIG. 3F after the formation of a lens material 55 covering all of lumiphoric material layer 40 and a portion of second fill material layer 45. Lens material 65 has an outwardly curved (convex, partially hemispherical) shape. In certain embodiments, lens material 55 may be formed by dispensing a material (possibly into a mold cavity (not shown)) over the solid-state light emitting assembly 50, followed by curing, where lens material 55 comprises silicone (or another material that is substantially CTE-matched to fill material layer 30, lumiphoric material layer 40, and second fill material layer 30).

[0089] 3H shows the solid state light emitting subassembly 50 of FIG. 3F after formation of an elevated reflector structure 52 overlying the second filler material layer 45. The elevated reflector structure 52 has sloped reflector walls 54 that bound a reflector cavity 53. In certain embodiments, the elevated reflector structure 52 includes reflective particles (e.g., titanium dioxide) in a silicone binder. In certain embodiments, a portion of the elevated reflector structure 52 may overlap the periphery of the light modifying material layer 40, preferably without overlapping the LED chip 16.

[0090] FIG. 3I illustrates a solid-state light-emitting component 61 comprising the items of FIG. 3H (i.e., solid-state light-emitting subassembly 50 and elevated reflector structure 52) after adding lens material 65 to reflector cavity 53 in contact with angled reflector wall 54. As shown, lens material 65 is disposed in contact with lumiphoric material 40 and reflector wall 54, and lens material 65 has an outwardly curved (convex) outer surface 66 through which light is extracted (i.e., exits) from device 51. In certain embodiments, lens material 65 comprises silicone. In certain embodiments, lens material 65 may be substantially CTE-matched to elevated reflector structure 52 and, in some cases, substantially CTE-matched to the remaining device layers (i.e., filler material layer 30, lumiphoric material layer 40, and second filler material layer 45), and in certain embodiments, each of the aforementioned items may comprise silicone (with or without particulate matter added).

[0091] Although the embodiments described herein above include filler material that laterally bounds the light-modifying (e.g., lumiphoric) material layer, the disclosure is not so limited. In certain embodiments, a solid state light emitting component includes a light-modifying material that is not laterally bounded by filler material that contacts the lateral edges of the light-modifying material.

[0092] 4 illustrates one embodiment of a solid-state light emitting component 71 suitable for producing focused light output radiation, including a hemispherical lens structure 65 disposed over the LED chip 16 and lumiphoric material layer 40. The LED chip 16 is supported by the substrate 12, and a first fill material 30 contacts the lateral boundaries 19 of the LED chip 16. The lumiphoric material layer 40 has a central portion 40A disposed in contact with the entire top surface of the LED chip 16 and a peripheral portion 40B disposed in contact with the LED-adjacent top surface portion 32A of the fill material layer 30, while the remaining top surface portion 32B of the fill material layer 30 is covered by an elevated reflector structure 72. The elevated reflector structure 72 defines angled reflector walls 74 that bound a reflector cavity 53 containing a portion of the lens material 65′, and further defines a top surface 73. In certain embodiments, the sloped reflector wall 74 is sloped at an angle between about 40 and 44 degrees, or about 42 degrees, from horizontal. The central portion of the lens material 65′ has an outwardly curved (convex, partially hemispherical) surface 66′, and the lens material 65′ further has a flat extension 64′ that overlies the top surface 73 of the reflector structure 72. In certain embodiments, the lens material 65′ may be formed by molding over the reflector structure 72 and the lumiphoric material layer 40, and may include silicone (or another material that is substantially CTE-matched to the first fill material layer 30, the lumiphoric material layer 40, and the reflector structure 72; the aforementioned items may also include silicone into which particulate matter is bonded). As shown, the lateral edges 41 of the lumiphoric material layer 40 may be exposed or, alternatively, may be covered by a portion of the reflector structure 72.

[0093] Figure 5 shows a solid state light emitting component 78 similar to that shown in Figure 4, but comprising a lens material 67 that is entirely contained within cavity 53 of elevated reflector structure 52 and has a flat outer (i.e., light exit) surface 68 that is aligned with top surface 73 of reflector structure 52, with top surface 73 being exposed. The remaining items in Figure 5 are identical to those described in connection with Figure 4, such that the descriptions of the remaining elements in Figure 4 are incorporated by reference with respect to Figure 5 and will not be repeated again. Compared to device 71 shown in Figure 4, solid state lighting component 78 of Figure 5 is suitable for producing a distributed light output radiation having a larger viewing angle.

[0094] FIG. 6 illustrates a solid-state light emitting component 81 according to one embodiment, comprising a unitary lens structure 82 disposed over a base structure or subassembly 80. The base structure or subassembly 80 includes an LED chip 16 supported by a substrate 12, with a first fill material 30 contacting a lateral boundary 19 of the LED chip 16. A lumiphoric material layer 40 has a central portion 40A disposed in contact with the entire top surface of the LED chip 16 and a peripheral portion 40B disposed in contact with the LED-adjacent top surface portion 32A of the fill material layer 30. A second fill material 45 is disposed over the remaining portion 32B of the first fill material 30 and in contact with a lateral boundary 41 of the lumiphoric material layer 40. The lumiphoric material layer 40 combined with the second fill material 45 provides a flat upper surface for receiving the unitary lens structure 82. The unitary lens structure 82 has a first portion 83 and a second portion 84 joined at a transition portion 87. In certain embodiments, the first portion 83 and the second portion 84 of the lens structure 82 are integrally formed (e.g., by molding, cleaving, cutting, machining, etc.). In certain embodiments, the first portion 83 and the second portion 84 are bonded or affixed to each other at a transition portion 87. In certain embodiments, the first portion 83 and the second portion 84 have substantially the same refractive index and may be formed of the same material (e.g., silicone or the like). The first portion 83 of the lens structure 82 has a width that increases with distance from the LED chip 16 and is positioned in contact with the lumiphoric material layer 40 as well as a portion of the second fill material layer 45. The first portion 83 of the lens structure is bounded by a peripheral wall surface 85 configured to cause total internal reflection (TIR) of radiation generated by the radiative center of the solid-state emitter (including the LED chip 16 and the lumiphoric material layer 40). In certain embodiments, the first portion 83 of the lens structure 82 has a frusto-conical shape (i.e., has a circular top profile), however, other shapes are also contemplated, such as, for example, a truncated pyramid shape (i.e., has a square top profile). The second portion 84 of the lens structure 82 has an outer light extraction (or light exit) surface 86 that has a substantially hemispherical shape.During operation of light-emitting component 81, radiation generated by LED chip 16 strikes lumiphoric material layer 40 (such radiation being reflected by filler material layers 30, 45) and is emitted into first portion 83 of lens structure 82. Any radiation emitted from the radiative center of LED chip 16 and lumiphoric material layer 40 (the combination embodying a solid-state light emitter) and incident on peripheral wall surface 85 is generally reflected upwardly towards second portion 84 of lens structure 82 and exits through hemispherical outer surface 86 into the surrounding environment.

[0095] FIG. 7A illustrates a solid-state light emitting component 91 according to one embodiment similar to that shown in FIG. 6 , except that the second (top) portion 94 of the unitary lens structure 92 has a (flattened) partially hemispherical shape. All components of the base structure or subassembly 80 in FIG. 7A correspond to the same items described in connection with FIG. 6 , are incorporated by reference, and will not be described again. The unitary lens structure 92 has a first portion 93 and a second portion 94 joined at a transition portion 97. In certain embodiments, the first portion 93 and the second portion 94 of the lens structure 92 are integrally formed (e.g., by molding, cleaving, cutting, machining, etc.) or are bonded or affixed to each other at the transition portion 97. The first portion 93 of the lens structure 92 has a width that increases with distance from the LED chip 16 and is disposed in contact with the lumiphoric material layer 40 as well as a portion of the second fill material layer 45. The first portion 93 of the lens structure is bounded by a peripheral wall surface 95 configured to cause TIR of radiation generated by the radiative center of the solid-state emitter (including the LED chip 16 and the lumiphoric material layer 40). In certain embodiments, the first portion 93 of the lens structure 92 has a frustoconical shape; however, other shapes are also contemplated, such as a truncated pyramidal shape. The second portion 94 of the lens structure 92 has an outer light extraction (or light exit) surface 96 having a flattened, partially hemispherical shape. During operation of the light-emitting component 91, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the first portion 93 of the lens structure 92. Any radiation emitted from the radiative center of the LED chip 16 and lumiphoric material layer 40 (the combination embodying the solid-state light emitter) and incident on the peripheral wall surface 95 is generally reflected upward toward the second portion 94 of the lens structure 92 and exits through the hemispherical outer surface 96 into the surrounding environment.

[0096] FIG. 7B is a modeled ray trace diagram illustrating the light beam pattern produced by a solid-state lighting component 91 according to the design of FIG. 7A. FIG. 8A illustrates a solid-state light emitting component 101 that includes the same base structure or subassembly 80 introduced in FIG. 6 ; the preceding description of all components of base structure or subassembly 80 is incorporated by reference and will not be repeated with respect to FIG. 8A . A unitary lens 102 is disposed over lumiphoric material layer 40 and a portion of second fill material layer 45 and has a first portion 103 and a second portion 104 that are joined at a transition portion 107. In certain embodiments, first portion 103 and second portion 104 of lens structure 102 are integrally formed (e.g., by molding, cleaving, cutting, machining, etc.) or are bonded or affixed to each other at transition portion 107. In certain embodiments, transition portion 107 has a small-radius curved profile 107A. First portion 103 of lens structure 102 has a width that increases with distance from LED chip 16 and is positioned in contact with lumiphoric material layer 40 as well as a portion of second fill material layer 45. The first portion 103 of the lens structure is bounded by a peripheral wall surface 105 configured to cause TIR of radiation generated by the radiative center of the solid-state emitter (including the LED chip 16 and the lumiphoric material layer 40). The second portion 104 of the lens structure 102 has an angled outer light extraction (or light exit) surface 106 terminating in a narrow radius termination 108. In certain embodiments, the first and second portions 103, 104 of the lens structure 102 may have shapes independently selected from a frustum shape (having a circular top profile), a truncated pyramid shape (having a square or rectangular top profile), or other shapes (including shapes having an ellipse or other rounded or trapezoidal top profile). During operation of the light-emitting component 101, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the first portion 103 of the lens structure 102.Any radiation emitted from the emission center of the LED chip 16 and lumiphoric material layer 40 (the combination embodying a solid-state light emitter) and incident on the peripheral wall surface 105 is generally reflected upwards towards the second portion 104 of the lens structure 102 and exits through the inclined outer light extraction surface 106 into the surrounding environment.

[0097] FIG. 8B is a modeled ray trace diagram illustrating the light beam pattern produced by a solid state light emitting device 101 according to the design of FIG. 8A. FIG. 9A illustrates a solid-state light emitting component 111 according to one embodiment similar to that shown in FIG. 8A , but with a second (top) portion 114 of the lens structure having a truncated, tapered (e.g., conical or pyramidal) shape with a central surface 119 that can be substantially parallel to the submount 12. The solid-state light emitting component 111 includes the same base structure or subassembly 80 introduced in FIG. 6 , and the preceding description of all components of the base structure or subassembly 80 is incorporated by reference and will not be repeated with respect to FIG. 9A . The unitary lens structure 112 has a first portion 113 and a second portion 114 disposed over the lumiphoric material layer 40 and a portion of the second fill material layer 45 and joined at a transition portion 117. In certain embodiments, the first portion 113 and the second portion 114 of the lens structure 112 are integrally formed (e.g., by molding, cleaving, cutting, machining, etc.) or are bonded or affixed to each other at the transition portion 117. In certain embodiments, the transition portion 117 has a small-radius curved profile 117A. The first portion 113 of the lens structure 112 has a width that increases with distance from the LED chip 16 and is positioned in contact with the lumiphoric material layer 40 as well as a portion of the second fill material layer 45. The first portion 113 of the lens structure is bounded by a peripheral wall surface 115 configured to cause TIR of radiation generated by the radiative center of the solid-state emitter (including the LED chip 16 and the lumiphoric material layer 40). The second portion 114 of the lens structure 112 has a sloped outer light extraction (or light output) surface 116 that transitions to a central surface 119 (at a curved interface 118). In certain embodiments, the first and second portions 113, 114 of the lens structure 112 may have shapes independently selected from a frustum shape, a truncated pyramid shape, or other shapes. During operation of the light emitting component 111 , radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30 , 45 ) and is emitted into the first portion 113 of the lens structure 112 .Any radiation emitted from the emission center of the LED chip 16 and lumiphoric material layer 40 (the combination embodying a solid-state light emitter) and incident on the peripheral wall surface 115 is generally reflected upward toward the second portion 114 of the lens structure 112 and exits through the inclined outer light extraction surface 116 and central surface 119 into the surrounding environment.

[0098] FIG. 9B is a modeled ray trace diagram illustrating the light beam pattern produced by a solid state light emitting device 11 similar to the design of FIG. 9A. FIG. 10 illustrates a solid-state light emitting component 121 according to one embodiment similar to that shown in FIG. 8A but with a sharp boundary between a first (lower) portion 123 and a second (upper) portion 124 of a unitary lens structure 122. The solid-state light emitting component 121 includes the same base structure or subassembly 80 introduced in FIG. 6 , and the preceding description of all components of the base structure or subassembly 80 is incorporated by reference with respect to FIG. 9A . The unitary lens structure 122 includes a first portion 123 and a second portion 124 disposed over lumiphoric material layer 40 and a portion of second fill material layer 45 and joined at a transition portion 127 having a sharp angular profile 127A. In certain embodiments, the first portion 123 and the second portion 124 of the lens structure 122 are integrally formed (e.g., by molding, cleaving, cutting, machining, etc.) or are bonded or affixed to each other at the transition portion 127. The first portion 123 of the lens structure 122 has a width that increases with distance from the LED chip 16 and is positioned in contact with the lumiphoric material layer 40 as well as a portion of the second fill material layer 45. The first portion 123 of the lens structure is bounded by a peripheral wall surface 125 configured to cause TIR of radiation generated by the radiative center of the solid-state emitter, encompassing the LED chip 16 and the lumiphoric material layer 40. The second portion 124 of the lens structure 122 has a sloped outer light extraction (or light exit) surface 126. In certain embodiments, the first and second portions 123, 124 of the lens structure 122 may have shapes independently selected from a frustum shape, a truncated pyramid shape, or other shapes. During operation of the light-emitting component 121, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the fill material layers 30, 45) and is emitted into the first portion 123 of the lens structure 122. Any radiation emitted from the emission center of the LED chip 16 and lumiphoretic material layer 40 and incident on the peripheral wall surface 125 is generally reflected upward toward the second portion 124 of the lens structure 122 and emitted into the surrounding environment through the inclined outer light extraction surface 126.

[0099] 11A illustrates a solid-state light emitting component 131 according to one embodiment, similar to the preceding embodiments, but including a unitary lens structure 132 having a truncated pyramidal first (lower) portion 133 and a second (upper) portion 134 that transitions from a truncated pyramidal shape at its proximal portion 134A to a dome shape at its distal portion 134B. In other words, when viewed from above, the unitary lens structure 132 has a profile that appears square for the truncated pyramidal first portion 133 and circular (or nearly circular) for the dome-shaped second portion 134, with a transition between the square top profile and the circular top profile. The solid-state light emitting component 131 includes the same base structure or subassembly 80 introduced in FIG. 6, and the preceding description of all components of the base structure or subassembly 80 with respect to FIG. 11A is incorporated by reference. The unitary lens structure 132 is disposed over lumiphoric material layer 40 and a portion of second fill material layer 45 and has a first portion 133 and a second portion 134 joined at a transition portion 137, which may have a sharp angular transition profile 137A. In certain embodiments, first portion 133 and second portion 134 of lens structure 132 are integrally formed (e.g., by molding, cleaving, cutting, machining, etc.) or are adhered or affixed to one another at transition portion 137. First portion 133 of lens structure 132 has a width (as part of a truncated inverted pyramid shape) that increases with distance from LED chip 16 and is disposed in contact with lumiphoric material layer 40 as well as a portion of second fill material layer 45. A first portion 133 of the lens structure is bounded by a peripheral wall surface 135 configured to cause TIR of radiation produced by the radiative center of the solid-state emitter containing the LED chip 16 and the lumiphoric material layer 40. A second portion 134 of the lens structure 132 has an angled outer light extraction (or light exit) surface 136 that transitions to a dome surface 138.During operation of the light-emitting component 131, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the first portion 133 of the lens structure 132. Any radiation emitted from the radiative center of the LED chip 16 and lumiphoric material layer 40 (the combination embodying a solid-state light emitter) and incident on the peripheral wall surface 135 is generally reflected upwards towards the second portion 134 of the lens structure 132 and exits through the angled outer light extraction surface 136 and the dome surface 138 into the surrounding environment.

[0100] FIG. 11B shows the solid state light emitting component 131 of FIG. 11A superimposed with a partial ray trace diagram showing light beams emitted from three locations along the top surface of the LED chip 16 and exiting the angled surface 136 and dome surface 138 of the second portion 134 of the lens structure 132.

[0101] In certain embodiments, the unitary lens structure may have a lateral dimension (e.g., width) that exceeds the width of the submount and corresponding base structure or subassembly. FIG. 12 shows a solid state light emitting component 141 according to one embodiment that includes a unitary lens structure 141 having a width that significantly exceeds the width of not only its submount 12, but also the base structure or subassembly 80″. The extended length of the TIR structure allows more light to be directed by the TIR, and therefore a narrower viewing angle can be achieved. The base structure or subassembly 80′ includes an LED chip 16 supported by a submount 12, and a first fill material 30 is disposed on the submount. The unitary lens structure 142 is disposed over the lumiphoric material layer 40 and a portion of the second filler material layer 45, and has a first portion 143 and a second portion 144 joined at a transition 147, the transition 147 having a sharp corner. The lens structure 142 may have a radiance transition profile 147A. In certain embodiments, the first portion 143 and the second portion 144 of the lens structure 142 are integrally formed (e.g., by molding, cleaving, cutting, machining, etc.) or are bonded or affixed to one another at the transition portion 147. The first portion 143 of the lens structure 142 has a width that increases with distance from the LED chip 16 and may embody any suitable shape (e.g., a frustum, a truncated pyramid, or the like), and the first portion 143 of the lens structure 142 is disposed in contact with the lumiphoric material layer 40 as well as a portion of the second fill material layer 45. The lens structure first portion 143 is bounded by a peripheral wall surface 145 configured to cause TIR of radiation generated by the radiation center of the solid-state emitter, encompassing the LED chip 16 and the lumiphoric material layer 40. The lens structure second portion 144 of the lens structure 142 has a convex shape with a hemispherical light extraction surface 146.During operation of the light-emitting component 141, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the first portion 143 of the lens structure 142. Any radiation emitted from the radiative center of the LED chip 16 and lumiphoric material layer 40 (the combination embodying a solid-state light emitter) and incident on the peripheral wall surface 145 is generally reflected upwards towards the second portion 144 of the lens structure 142 and emitted through the hemispherical light extraction surface 136 to the surrounding environment.

[0102] In certain embodiments, the unitary lens structure may incorporate one or more curved surfaces configured to induce TIR to shape the output radiation of the solid state lighting device. FIG. 13A illustrates a solid-state light emitting component 151 according to one embodiment, comprising a unitary lens structure 152 disposed over a base portion or subassembly 80, the lens structure 152 having curved surfaces 155 disposed along its lateral boundaries and configured to induce TIR of radiation emitted from the radiative center of the solid-state emitter comprising the LED chip 16 and lumiphoric material layer 40 of the base portion 80. The solid-state light emitting component 151 comprises the same base structure or subassembly 80 introduced in FIG. 6, and the preceding descriptions of all components of the base structure or subassembly 80 are incorporated by reference with respect to FIG. 13A. The lens structure 152 has a width that increases with distance from the LED chip 16 and terminates in a flat light extraction surface 156 that may be parallel to a major surface of the submount 12. During operation of the light-emitting component 151, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the lens structure 112. Any radiation emitted from the radiative centers of the LED chip 16 and lumiphoric material layer 40 and incident on the curved peripheral wall surface 155 is generally reflected upwards towards the flat light extraction surface 156, through which the light is emitted into the surrounding environment.

[0103] Figure 13B is a partial ray trace diagram for an ideal unitary lens 152' similar to the unitary lens 152 of the solid-state lighting component of Figure 13A, but with a continuously curved bottom (instead of a truncated curved bottom). A pseudo-emission center 150 of a solid-state light emitter is superimposed on the bottom of the ideal unitary lens 152', with dashed lines of sight 159' positioned 84 degrees apart, corresponding to a direct emission cone with a half-angle of 42 degrees. All solid-state light emitter radiation inside this direct emission cone will be transmitted directly (without reflection) through the flat light extraction surface 156', while radiation outside this cone will be reflected by the curved peripheral wall surface 155 in a direction toward the flat light extraction surface 156'.

[0104] 14A is a simplified cross-sectional view of a solid-state light emitting component 161 according to one embodiment similar to that shown in FIG. 13A , comprising a unitary lens structure 162 having a first portion 163 with a curved surface 165 disposed along its lateral boundaries and configured to cause TIR of the radiation, and further comprising a second portion 164 of the unitary lens structure 162 having a constant width and disposed distally from the LED chip 16, thereby resulting in a narrower direct radiation cone. The solid-state light emitting component 161 comprises the same base structure or subassembly 80 introduced in FIG. 6 , and the preceding descriptions of all components of the base structure or subassembly 80 are incorporated by reference with respect to FIG. 14A . The second portion 164 of the lens structure has side walls 167 substantially perpendicular to the major surface of the submount 12 and terminates in a flat light extraction surface 166 that may be substantially parallel to the major surface of the submount 12. During operation of the light-emitting component 161, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the lens structure 162. Any radiation emitted from the radiative centers of the LED chip 16 and lumiphoric material layer 40 and incident on the curved peripheral wall surface 165 is generally reflected upwards towards the second lens portion 164 and flat light extraction surface 166, through which the light is emitted into the surrounding environment.

[0105] 14B is a partial ray trace diagram for an ideal unitary lens 162′ similar to the unitary lens 162 of the solid-state light emitting component of FIG. 14A but with a continuous curved bottom (instead of a truncated curved bottom). A pseudo-emission center 160 of a solid-state light emitter is superimposed on the bottom of the ideal unitary lens 162′, with dashed lines of sight 169′ spaced 84 degrees apart, corresponding to a direct emission cone with a half-angle of 42 degrees. All solid-state light emitter radiation within this direct emission cone will be transmitted directly (without reflection) through the flat extraction surface 166′, while radiation outside this cone will be reflected by the curved peripheral wall surface 165′ and / or the flat extraction surface 166′ in a direction toward the flat extraction surface 166′.

[0106] FIG. 15 illustrates a solid state light emitting component 171 according to one embodiment, similar to the preceding embodiments, but including a unitary lens structure 172 having a first (lower) portion 173 having a truncated hemispherical shape and a second (upper) portion 174 also having a hemispherical shape, the first and second portions 173, 174 being joined (e.g., by a transparent adhesive or other means) at a transition portion 177. The solid state light emitting component 171 includes the same base structure or subassembly 80 introduced in FIG. 6, and the preceding description of all components of the base structure or subassembly 80 is incorporated by reference with respect to FIG. 15. The first portion 173 of the lens structure 172 has curved surfaces 175 disposed along its lateral boundaries and configured to cause TIR of radiation emitted from the radiative center of the solid state emitter comprising the LED chip 16 and lumiphoric material layer 40 of the base portion 80. During operation of the light-emitting component 171, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the lens structure 172. Any radiation emitted from the radiative centers of the LED chip 16 and lumiphoric material layer 40 and incident on the curved peripheral wall surface 175 is generally reflected upwards towards the second lens portion 174 and its curved light extraction surface 176, through which the light is emitted into the surrounding environment.

[0107] As previously mentioned herein, solid state light emitting components according to various embodiments may include a unitary lens defining one or more recesses therein. 16 illustrates a solid state light emitting device according to one embodiment comprising a unitary lens structure 182 having a recess 188 defined therein, the recess 188 having at least one sloping wall 185 that narrows toward a bottom 188A proximate the lumiphoric material 41 and LED chip 16. In a particular embodiment, the recess 188 has a conical shape and is defined in the lens structure 182 having a square (or other rectangular) upper profile to generate a curved upper peripheral edge 189 along the upper boundary of the lens structure 182, with the light exit surface 186 disposed along a lateral edge of the lens structure 182. The sloping wall 185 is configured to cause TIR of radiation emitted from the radiative center of the solid state emitter comprising the LED chip 16 and lumiphoric material layer 40 of the base portion 80 and to reflect light laterally toward the light exit surface 186 disposed along the lateral edge of the lens structure 182. The solid state light emitting component 181 comprises the same base structure or subassembly 80 introduced in FIG. 6 , and the preceding description of all components of the base structure or subassembly 80 is incorporated by reference with respect to FIG. 16 . During operation of the light emitting component 181, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the lens structure 182. At least a portion of the radiation emitted from the emissive centers of the LED chip 16 and lumiphoric material layer 40 is generally reflected upward toward the angled walls 185 bounding the recess 188 and further reflected outward toward the light exit surface 186, through which the light is emitted into the surrounding environment.

[0108] FIG. 17A illustrates a solid-state light emitting device according to an embodiment similar to FIG. 16 , with a unitary lens structure 192 defining a recess bounded by its straight upper edge 199 (instead of a curved upper edge). The recess 198 has at least one sloping wall 195 that narrows toward a bottom 198A proximate the lumiphoric material 41 and the LED chip 16. In a particular embodiment, the recess 198 defines the lens structure 192 having a conical shape and a circular upper profile. In a particular embodiment, the recess 198 defines the lens structure 192 having an inverted pyramid shape and a square upper profile. Other recess and lens shapes may be selected. The sloping wall 195 is configured to cause TIR of radiation emitted from the radiative center of the solid-state emitter comprising the LED chip 16 and lumiphoric material layer 40 of the base portion 80, and to reflect light laterally toward light exit surfaces 196 disposed along the lateral edges of the lens structure 192. 6, and the preceding description of all components of base structure or subassembly 80 is incorporated by reference with respect to FIG. 17A. During operation of light-emitting component 191, radiation generated by LED chip 16 strikes lumiphoric material layer 40 (such radiation being reflected by filler material layers 30, 45) and is emitted into lens structure 192. At least a portion of the radiation emitted from the radiative centers of LED chip 16 and lumiphoric material layer 40 and incident on at least one angled wall surface 195 bounding recess 198 is reflected outward toward light-emitting surface 196, through which light is emitted into the surrounding environment.

[0109] Figure 17B is a modeled ray trace diagram illustrating the light beam pattern produced by the solid state light emitting device 191 of Figure 17A when positioned facing upwards. As shown, most of the radiation of the solid state light emitting device 191 is emitted in a side direction, with only a small portion of the radiation being directed upwards through the recess.

[0110] In certain embodiments, the solid state light emitting components disclosed herein may be used in conjunction with a secondary reflector structure to provide desired light shaping and / or light directing benefits.

[0111] Figure 18A is a cross-sectional view of the solid state light emitting component 191 of Figure 17A supported on a second reflector base 201 and disposed within a cavity 208 of a second reflector structure 200. The second reflector structure 200 has an angled wall 202 with a reflective inner surface 205, the angled wall 202 defining an inner diameter that generally increases with distance from the second reflector base 201. The second reflector structure 200 is configured to redirect light generated laterally by the solid state light emitting component in an upward direction (generally perpendicular to the second reflector base 201), as shown in Figure 18B, which is a modeled ray trace diagram illustrating the light beam pattern generated by the solid state light emitting device and second reflector structure of Figure 18A.

[0112] The shape and relative proportions of the lens structure and any corresponding recesses in a light-emitting component can affect the pattern of light emitted from the light-emitting component. For example, Figure 19 is a modeled ray-trace diagram showing the pattern of a light beam produced by a solid-state light-emitting device 191A similar to the light-emitting component 191 of Figure 17A, but with the solid-state light-emitting device 191A stretched in width (and positioned to emit light downward). Comparing Figure 19 with Figure 17B, it can be seen that stretching the width of the lens structure changes the light to be emitted more to the side, and a different pattern of light rays is transmitted through the recesses defined in the lens structure of the solid-state light-emitting device 191A.

[0113] FIG. 20 illustrates a solid state light emitting component 201 according to one embodiment comprising a unitary lens structure 202 defining a recess 207 shaped as a groove between two lobes 202A, 202A forming an upper (or second) portion of the lens structure 202. The lower (or first) portion of the lens structure 202 is bounded by peripheral wall surfaces 205A, 205B configured to cause TIR of radiation generated by the radiative center of a solid state emitter encompassing the LED chip 16 and lumiphoric material layer 40 within a base structure or subassembly 80 of the solid state light emitting component 201. The solid state light emitting component 201 comprises the same base structure or subassembly 80 introduced in FIG. 6, and the preceding description of all components of the base structure or subassembly 80 is incorporated by reference with respect to FIG. 20. The lower portion of the lens structure 201 has a width that increases with distance from the LED chip 16. The groove-shaped recess 207 is bounded by angled walls 204A, 204B that meet at a bottom 208 of the recess 207, and the angled walls 204A, 204B may be configured to cause TIR of radiation generated by the emission centers of the LED chip 16 and the lumiphoric material layer 41. The distal portion 203A, 203B of each lobe 202A, 202A is terminated by a light extraction surface 206A, 206B having an outwardly curved profile. During operation of the light-emitting component 201, radiation generated by the LED chip 16 impinges on the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the lens structure 201. At least a portion of the radiation emitted from the LED chip 16 and the lumiphoric material layer 40 and incident on (A) the peripheral wall surfaces 205A, 205B and / or the inclined wall surfaces 204A, 204B is reflected outward towards the light extraction surfaces 206A, 206B of the lobes 202A, 202B, through which the light is emitted into the surrounding environment.

[0114] In certain embodiments, the unitary lens structure of the light-emitting component may have a compound refractive index portion disposed over the light-diffusing portion, the compound refractive index portion having a first region having a first refractive index and a second region having a second refractive index different from the first refractive index, the first region covering less than the entire light-diffusing portion.

[0115] 21 illustrates a solid state light emitting component 211 according to one embodiment that includes a lens structure (212 incorporating at least lens components 212A, 212B) having a compound refractive index portion 214 (having first and second regions 220, 221 of refractive index differing by at least 0.1, 0.2, 0.3, 0.4, 0.5, or some other threshold) disposed over a light diffusing portion 213, which is disposed above a base structure or subassembly 80. The solid state light emitting component 211 includes the same base structure or subassembly 80 introduced in FIG. 6, and the preceding descriptions of all components of the base structure or subassembly 80 are incorporated by reference with respect to FIG. 21. The light diffusing portion 213 has a width that increases with distance from the LED chip 16 and is bounded by at least one peripheral wall surface 215 configured to cause TIR of radiation generated by the radiative center of the solid state emitter encompassing the LED chip 16 and lumiphoric material layer 40. The light diffusing portion 213 meets the complex refractive index portion 214 at a boundary-to-boundary interface 217, and the first region of the complex refractive index portion 214 covers less than the entire light diffusing portion 213. As shown, the complex refractive index portion 220 may have a flat surface 222 at the interface 217 (where the first and second regions 220, 221 meet the light diffusing region 213), and a hemispherical (or other curved) surface 224 may be provided between the first and second regions 220, 221 as the boundary-to-boundary interface. The second region 221 has a side surface 216 and a top surface 218, which may embody light extraction surfaces of the light-emitting component 211. In certain embodiments, the light diffusing portion 213 includes a first solid material, the second region 221 of the compound refractive index portion 214 includes a second solid material (which may be the same as or different from the first solid material), and the first region 220 of the compound refractive index portion 214 includes a gas, liquid, or solid material. In certain embodiments, the first and second solid materials include silicone, and the first region 220 includes air. During operation of the light emitting component 211, radiation generated by the LED chip 16 impinges on the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the light diffusing portion 213.At least a portion of the radiation emitted from the radiative center of the LED chip 16 and lumiphoric material layer 40 and incident on at least one peripheral wall surface 215 is reflected upward toward the compound refractive index section 214. A central portion of the upwardly reflected light may enter the first refractive index section 220 and be refracted through the inter-region interface 224 into the second refractive index section 221, while a peripheral portion of the upwardly reflected light may enter the second refractive index section 221 directly. Light that traverses the second refractive index section 221 exits through the light extraction surfaces 216, 218 into the surrounding environment.

[0116] 22A illustrates another embodiment of a solid-state light emitting component 231 in which a unitary lens structure 212 (comprised of lens portions or lobes 212A, 212B) defines a central recess 237, with each lobe (212A, 212B) having a proximal peripheral wall surface 235A, 235B, a distal peripheral light extraction surface 236A, 236B that provides a sawtooth-shaped profile, and a curved inner wall surface 234A, 234B. Each proximal peripheral wall surface 235A, 235B may have a linear cross-sectional profile configured to cause TIR (e.g., upward) of radiation generated by the radiation center of the solid-state emitter containing the LED chip 16 and lumiphoric material layer 40. Each curved inner wall surface 234A, 234B may be configured to cause TIR (e.g., lateral) of radiation generated by the emission center of the LED chip 16 and lumiphoric material layer 40, and may also cause TIR of at least some radiation reflected upward by the corresponding proximal peripheral wall surface 235A, 235B. The recess 237 is bounded by the curved inner wall surfaces 234A, 234B and narrows toward a base 238A proximate the lumiphoric material 40. In certain embodiments, lens material may remain between the base 238A and the lumiphoric material 40. A sharp or curved boundary 237A, 237B may be provided between the light extraction region 236A, 236B and the curved inner wall surface 234A, 234B. During operation of the light-emitting component 231, radiation generated by the LED chip 16 strikes the lumiphoric material layer 40 (such radiation being reflected by the filler material layers 30, 45) and is emitted into the lower portions of the lobes 232A, 232B. A low-angle portion of the radiation emitted from the LED chip 16 and lumiphoric material layer 40 and incident on the proximal peripheral wall surfaces 235A, 235B may be reflected generally upward toward the light extraction regions 236A, 236B and emitted into the surrounding environment. A portion of the light (if any) reflected by the proximal peripheral wall surfaces 235A, 235B, as well as a high-angle portion of the radiation emitted from the LED chip 16 and lumiphoric material layer 40, are also reflected generally sideways toward the light extraction regions 236A, 236B and emitted into the surrounding environment.

[0117] 22B is a first modeled ray trace diagram illustrating the sparse pattern of a selected light beam produced by the solid-state light emitting device of FIG. 22A. As shown, low-angle portions of the radiation emitted from the LED chip 16 and lumiphoric material layer 40 and incident on the proximal peripheral wall surfaces 235A, 235B are reflected generally upward toward the light extraction regions 236A, 236B and exit the illumination component 231, while high-angle portions of the radiation emitted from the LED chip 16 and lumiphoric material layer 40 are reflected generally laterally toward the light extraction regions 236A, 236B and exit the illumination component 231.

[0118] 23A provides a plot of the viewing angle (full-width angle at half maximum) for several samples of solid-state light emitting devices ("V9Flat") comprising a flat lens, reflector cavity, LED chip, and lumiphoric material arrangement according to FIG. 5, and for several samples of a comparative device ("XPGB+") comprising a hemispherical lens arrangement deposited on a base structure comprising lumiphoric material (similar to FIG. 1) disposed on the side facets of the LED chip and between the submount and the reflective fill material. As shown, the viewing angles are similar for each device design.

[0119] Figure 23B provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid-state light emitting device and comparative device of Figure 23 A. As shown, intensity across viewing angle values is similar for each device design.

[0120] Figure 23C provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid-state lighting device and comparative device of Figure 23A. As shown, the XPGB+ design exhibits a larger change in color point with changing viewing angle, while the V9Flat design exhibits significantly more uniform color characteristics with respect to viewing angle.

[0121] FIG. 24A provides plots of viewing angle (full-width angle at half maximum) for several samples of solid-state light emitting devices ("V29") according to FIG. 11A, and for several samples of a comparative device ("XPGB+") with a similar lens arrangement but with lumiphoric material (similar to FIG. 1) disposed on the side facets of the LED chip and between the submount and the reflective fill material. FIG. 24B further provides viewing angle average and standard deviation values for the devices of FIG. 24A. FIGS. 24A and 24B show that the V29 devices (with lens structures configured to produce TIR) have substantially narrower viewing angles (average values of about 72 vs. about 119) relative to the comparative devices. This difference in viewing angle is believed to be primarily due to the selected non-unitary (non-Lambertian) lens structure of the V29 devices. Consistent with the above, in certain embodiments, the non-Lambertian unitary lens structure of the solid state lighting component (which may or may not provide TIR, depending on the embodiment) is configured to shape optical radiation received from at least one solid state light emitter to produce focused output radiation having an intensity distribution over an angular range with a FWHM value in the range of less than 100, or less than 90, or less than 80, or less than 70, or less than 60, or between 40 and 100, or within the range of 45 to 95, or within the range of 50 to 90, or within the range of 55 to 85, or within the range of 60 to 90, or within the range of 60 to 80, or within the range of 65 to 80, or within a range having upper and lower endpoints of any of the above values.

[0122] Figure 24C provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid-state light emitting device of Figure 24A and the comparative device. Figure 24D provides a bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) for the above-mentioned devices, derived from the intensity data plotted in Figure 24C. Figure 24C shows that the V29 device exhibits a significantly increased peak intensity, while Figures 24C and 24D show that the V29 device exhibits a larger decrease in intensity with changing viewing angle.

[0123] FIG. 25A provides plots of viewing angles (full-width-at-half-maximum angles) for several samples of solid-state light emitting devices ("V41V40") with an outwardly curved lens and lumiphoric material arrangement according to FIG. 7A, and for several samples of comparative devices ("XPGB+") with a similar lens arrangement but with lumiphoric material (similar to FIG. 1) disposed on the side facets of the LED chip and between the submount and the reflective fill material. FIG. 25B also provides viewing angle average and standard deviation values for the same solid-state light emitting devices of FIG. 25A and the comparative devices. FIGS. 25A and 25B show that the V4140 devices have a wider viewing angle (average value of about 138 vs. about 119) relative to the comparative devices. This difference in viewing angle is believed to be primarily due to the selected non-unitary lens structure (which is non-Lambertian) of the V4140 devices. Consistent with the above, in certain embodiments, the non-Lambertian unitary lens structure of the solid state lighting component is configured to shape optical radiation received from at least one solid state light emitter to produce focused output radiation having an intensity distribution over an angular range with a FWHM value greater than 130, or greater than 135, or greater than 140, or greater than 150, or greater than 160, or greater than 170, or in the range of 130 to 200, or in the range of 140 to 200, or in the range of 150 to 200, or in the range of 130 to 190, or in the range of 140 to 190, or in the range of 150 to 190, or in the range of 130 to 180, or in the range of 140 to 180, or in the range of 150 to 180, or within a range having upper and lower endpoints of any of the above values.

[0124] FIG. 25C provides a bivariate fit of luminous flux corrected by color point (CCx) for the same solid-state lighting device and comparative device of FIG. 25A, showing that the luminous flux corrected by color point (CCx) values for the V4140 and XPGB+ devices are similar.

[0125] Figure 25D provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid-state light emitting device of Figure 25A and the comparative device. Figure 25E provides a bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) for the above devices, derived from the intensity data plotted in Figure 26D. Figure 25D shows that the V4140 device exhibits a significantly increased peak intensity, while Figures 25D and 25E show that the V4140 device exhibits less decrease in intensity with changing viewing angle.

[0126] Figure 25F provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid-state lighting device and comparative device of Figure 25A. Figure 25F shows that the XPGB+ design exhibits a larger change in color point with changing viewing angle, while the V4140 design exhibits more uniform color characteristics with viewing angle.

[0127] While Figures 25A-25F provide data for devices with larger viewing angles than the XPGB+ comparative devices, additional devices with even higher viewing angle characteristics are characterized in Figures 26A-26D.

[0128] FIG. 26A provides plots of the viewing angle (full-width angle at half maximum) for several samples of a solid-state light emitting device ("V24InvCone") having a cone-shaped recess defined by a unitary lens disposed over the LED chip and lumiphoric material arrangement according to FIG. 17A, and for several samples of a comparative device ("XPGB+") having a similar lens arrangement but with lumiphoric material (similar to FIG. 1) disposed on the side facets of the LED chip and between the submount and the reflective fill material. FIG. 26A shows that the V4140 device has a wider viewing angle (average value of about 158 vs. about 119) relative to the comparative device. This difference in viewing angle is believed to be primarily due to the selected non-unitary lens structure (which is non-Lambertian) of the V24InvCone device.

[0129] Figure 26B provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same solid-state light emitting device of Figure 26A and the comparative device. Figure 26C provides a bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) for the same device. Figures 26B and 26C show distinctive intensity profiles with a local minimum at a viewing angle value of 0 degrees, while the intensity (and relative intensity) rises to local peak values near 40 degrees and -40 degrees, respectively, and then decreases with increasing angular difference away from the local peak.

[0130] Figure 26D provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid-state lighting device and comparative device of Figure 26A. The color point is comparable between the V24InvCone device and the XPGB+ comparative device for viewing angle values from about -50 to about 50 degrees, but the color point for the V24InvCone device is significantly better for viewing angle values outside of this range.

[0131] FIG. 27A provides plots of the viewing angle (full-width angle at half maximum) for several samples of solid-state light emitting devices ("V8Dome") comprising a hemispherical lens, reflector cavity, LED chip, and lumiphoric material arrangement according to FIG. 4 (i.e., comprising a lens structure that does not produce TIR), and for several samples of comparative devices ("XPGB+") comprising a hemispherical lens arrangement deposited on a base structure comprising a lumiphoric material (similar to FIG. 1) disposed on the side facets of the LED chip and between the submount and the reflective fill material. FIG. 27B provides the viewing angle average and standard deviation values for the devices characterized in FIG. 27A. FIGS. 27A and 27B show that the V8Dome devices (with lens structures not configured to produce TIR) have narrower viewing angles (average values of about 85° versus about 119°) relative to the comparative devices. This difference in viewing angle is believed to be primarily due to the selected non-unitary lens structure (which is non-Lambertian) of the V8Dome devices.

[0132] Figure 27C provides a bivariate fit of intensity (in candelas) as a function of viewing angle (theta) for the same Figure 27A solid-state light emitting device and comparative device. Figure 27D provides a bivariate fit of relative intensity (dimensionless) as a function of viewing angle (theta) for the same Figure 27A solid-state light emitting device and comparative device. Figure 27C shows that the V8Dome device exhibits a significantly increased peak intensity, while Figures 27C and 27D show that the V8Dome device exhibits a larger decrease in intensity with changing viewing angle.

[0133] FIG. 27E provides a bivariate fit of the change in correlated color temperature (dCCT_c) as a function of viewing angle (theta) for the same solid-state lighting device of FIG. 27A and the comparative device, showing that the change in CCT as a function of viewing angle is comparable between each device, but slightly better for the XPGB+ at larger viewing angles.

[0134] Embodiments disclosed herein may provide one or more of the following advantageous technical effects: enabling the fabrication of compact solid state light emitting devices having desired beam patterns (e.g., whether highly focused, highly divergent, or having novel shapes or distributions) without necessarily requiring secondary optics; enabling the fabrication of compact solid state light emitting devices that exhibit improved luminous efficiency and / or color point uniformity across the emission area; simplifying the fabrication of solid state light emitting devices; and improving the reliability and service life of high intensity solid state light emitting devices.

[0135] Those skilled in the art will recognize improvements and modifications to the preferred embodiments of the present disclosure, and all such improvements and modifications are considered to be within the scope of the concepts disclosed in this specification and the claims that follow.

Claims

1. 1. A solid state light emitting component comprising: at least one solid state light emitter configured to generate light radiation; a unitary lens structure disposed in contact with the at least one solid state light emitter and configured to receive at least a portion of the light radiation generated by the at least one solid state light emitter; Equipped with at least a first portion of the unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter; at least a first portion of the unitary lens structure is configured to cause total internal reflection of a portion of the light radiation emanating from an emission center of the at least one solid state light emitter, the at least one portion having at least one sloped or curved surface oriented to reflect light toward one or more light output surfaces of the solid state light emitting component; Solid-state light-emitting components.

2. The solid state light emitting component of claim 1 , wherein the at least one sloped or curved surface includes a peripheral edge surface of at least a first portion of the unitary lens structure.

3. The solid state light emitting component of claim 1 , wherein the unitary lens structure defines a recess, and the at least one sloped or curved surface bounds at least a portion of the recess.

4. 2. The solid state light emitting component of claim 1, wherein the unitary lens structure further comprises a second portion having a width that decreases with distance from the at least one solid state light emitter, the first portion of the unitary lens structure being disposed between the at least one solid state light emitter and the second portion of the unitary lens structure.

5. 5. The solid state light emitting component of claim 4, wherein the second portion of the unitary lens structure has a proximal portion having a truncated pyramid shape and a distal portion having a dome shape.

6. 5. The solid state light emitting component of claim 4, wherein the unitary lens structure has a third portion having a circular or square cross-sectional shape, the third portion being disposed between the first portion and the second portion.

7. 2. The solid state light emitting component of claim 1, wherein the unitary lens structure comprises a material having a first refractive index, at least a first portion of the unitary lens structure being bounded by outer lateral lens surfaces, the outer lateral lens surfaces being bounded by a material or space having a second refractive index, the first refractive index exceeding the second refractive index by at least 0.

4.

8. 10. The solid state light emitting component of claim 1, wherein at least a first portion of the unitary lens structure has a truncated inverted pyramid shape or a truncated inverted cone shape.

9. 10. The solid state light emitting component of claim 1, wherein the unitary lens structure has a recess shaped as an inverted pyramid, an inverted cone, or a groove, the recess having a bottom aligned with an emission center of the at least one solid state light emitter.

10. The solid state light emitting component of claim 8 or 9, wherein the one or more light output surfaces are disposed along lateral edges of the unitary lens structure.

11. 10. The solid state light emitting component of claim 1, further comprising a second lens structure disposed in contact with the unitary lens structure, the unitary lens structure being disposed between the at least one solid state light emitter and the second lens structure.

12. 10. The solid state lighting component of claim 1, further comprising a submount to which the at least one solid state light emitter is mounted, wherein a width of the unitary lens structure is less than or equal to a width of the submount at a location where the unitary lens structure is disposed in contact with the at least one solid state light emitter.

13. The at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein a side end surface of the LED chip is free of lumiphoric material, and the solid state light emitting component comprises: a submount to which the at least one solid state light emitter is mounted; a filler material layer including a filler material and contacting a side end surface of the at least one solid state light emitter, the filler material including white or light reflective particles dispersed in a binder; Furthermore, a portion of the lumiphoric material overlapping a portion of the filler material layer; The solid state light emitting component of any one of claims 1 to 9.

14. 14. The solid state light emitting component of claim 13, wherein the lumiphoric material layer, the filler material layer, and the unitary lens structure have substantially matched coefficients of thermal expansion (CTE) such that a difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the lens material is in the range of less than 20%.

15. The solid state light emitting component of any one of claims 1 to 9, wherein the unitary lens structure comprises silicone.

16. 1. A solid state light emitting component comprising: at least one solid state light emitter configured to generate light radiation; a non-Lambertian unitary lens structure disposed in contact with the at least one solid state light emitter and configured to receive at least a portion of the optical radiation generated by the at least one solid state light emitter; the solid state light emitting component has no air gaps through which the light radiation transmits into the non-Lambertian unitary lens structure; The non-Lambertian unitary lens structure has the following characteristics (a) or (b): (a) focused output radiation having an intensity distribution over an angular range with a full width at half maximum (FWHM) value of less than 100; or (b) a dispersed output radiation having an intensity distribution over an angular range with a FWHM value greater than 130; a solid state lighting component configured to shape light radiation received from the at least one solid state light emitter to produce output radiation having one of:

17. 17. The solid state lighting component of claim 16, wherein the non-Lambertian unitary lens structure is configured to shape optical radiation received from the at least one solid state light emitter to produce focused output radiation having an intensity distribution over an angular range with a FWHM value in a range of 40 to 100.

18. 17. The solid state lighting component of claim 16, wherein the non-Lambertian unitary lens structure is configured to shape optical radiation received from the at least one solid state light emitter to produce a dispersed output radiation having an intensity distribution over an angular range with a FWHM value in a range of 130 to 200.

19. at least a first portion of the non-Lambertian unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter; at least a first portion of the non-Lambertian unitary lens structure is bounded by side end surfaces oriented to cause total internal reflection of a portion of optical radiation emanating from an emissive center of the at least one solid state light emitter; 17. The solid state light emitting component of claim 16.

20. the at least one solid state light emitter is disposed within a cavity defined by an elevated reflector structure; at least a first portion of the non-Lambertian unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter; at least a first portion of the non-Lambertian unitary lens structure is disposed in contact with a reflective wall of the elevated reflector structure that bounds the cavity.

17. The solid state light emitting component of claim 16.

21. the elevated reflector structure includes light-reflecting particles suspended in a binder; the non-Lambertian unitary lens structure includes a lens material; the elevated reflector structure and the lens material are substantially matched in coefficient of thermal expansion (CTE) such that the difference in CTE between them is in the range of less than 20%; 17. The solid state light emitting component of claim 16.

22. 22. The solid state light emitting component of claim 16, further comprising a submount to which the at least one solid state light emitter is mounted, wherein a width of the non-Lambertian unitary lens structure is less than or equal to a width of the submount at a location where the non-Lambertian unitary lens structure is disposed in contact with the at least one solid state light emitter.

23. The at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein a side end surface of the LED chip is free of lumiphoric material, and the solid state light emitting component comprises: a submount to which the at least one solid state light emitter is mounted; a filler material layer including a filler material and contacting a side end surface of the at least one solid state light emitter, the filler material including white or light reflective particles dispersed in a binder; Furthermore, a portion of the lumiphoric material overlapping a portion of the filler material layer; The solid state light emitting component of any one of claims 16 to 21.

24. 24. The solid state light emitting component of claim 23, wherein the lumiphoric material layer, the filler material layer, and the non-Lambertian unitary lens structure have substantially matched coefficients of thermal expansion (CTE) such that a difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the lens material is in the range of less than 20%.

25. The solid state light emitting component of any one of claims 16 to 21, wherein the non-Lambertian unitary lens structure comprises silicone.

26. at least one solid state light emitter configured to generate light radiation, the at least one solid state light emitter having an emission center; a unitary lens structure disposed in contact with the at least one solid state light emitter and configured to receive at least a portion of the light radiation generated by the at least one solid state light emitter; Equipped with the unitary lens structure has a recess shaped as an inverted pyramid, an inverted cone, or a groove having a base aligned with the radial center, the recess being bounded by one or more sloping walls, an axis extending through the base and the radial center, the one or more sloping walls sloping away from the axis by an angle in the range of 40 to 44 degrees; Solid-state light-emitting components.

27. 27. The solid state light emitting component of claim 26, wherein the unitary lens structure has one or more light exit surfaces along its lateral edges, and the one or more angled walls are configured to reflect light toward the one or more light exit surfaces.

28. 27. The solid state light emitting component of claim 26, wherein the unitary lens structure comprises a material having a first refractive index, and the recess is substantially filled with a material having a second refractive index that differs from the first refractive index by at least 0.

4.

29. 30. The solid state light emitting component of claim 28, wherein the material having the second refractive index comprises air.

30. at least a first portion of the unitary lens structure proximate the at least one solid state light emitter has a width that increases with distance from the at least one solid state light emitter; at least a first portion of the unitary lens structure is laterally bounded by at least one sloped or curved surface having an orientation configured to cause total internal reflection of a portion of the optical radiation emanating from an emission center of the at least one solid state light emitter; 30. The solid state light emitting component of any one of claims 26 to 29.

31. the unitary lens structure defines first and second lobes, and the recess is shaped as a groove disposed between the first and second lobes.

30. The solid state light emitting component of any one of claims 26 to 29.

32. 32. The solid state light emitting component of claim 31, wherein each of the first lobe and the second lobe has a light emitting surface, at least a portion of the light emitting surface having an outwardly curved or convex profile.

33. 30. The solid state light emitting component of claim 26, further comprising a submount to which the at least one solid state light emitter is attached, wherein a width of the unitary lens structure is equal to or less than a width of the submount at a location where the unitary lens structure is disposed in contact with the solid state light emitter.

34. The at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein a side end surface of the LED chip is free of lumiphoric material, and the solid state light emitting component comprises: a submount to which the at least one solid state light emitter is mounted; a filler material layer including a filler material and contacting a side end surface of the at least one solid state light emitter, the filler material including white or light reflective particles dispersed in a binder; Furthermore, a portion of the lumiphoric material overlapping a portion of the filler material layer; 30. The solid state light emitting component of any one of claims 26 to 29.

35. 35. The solid state light emitting component of claim 34, wherein the lumiphoric material layer, the filler material layer, and the unitary lens structure have substantially matched coefficients of thermal expansion (CTE) such that a difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the lens material is in the range of less than 20%.

36. The solid state light emitting component of any one of claims 26 to 29, wherein the unitary lens structure comprises silicone.

37. at least one solid state light emitter disposed on the submount and configured to generate light radiation, the at least one solid state light emitter having an outer surface distal to the submount; a lens structure disposed over the at least one solid state light emitter and configured to receive at least a portion of the light radiation generated by the at least one solid state light emitter; The lens structure comprises: a light diffusing portion in contact with an exterior surface of the at least one solid state light emitter; a composite refractive index portion disposed over the light diffusion portion, the composite refractive index portion having a first region having a first refractive index and a second region having a second refractive index different from the first refractive index, the first region covering less than the entire light diffusion portion; 1. A solid-state light emitting component comprising:

38. 38. The solid state lighting component of claim 37, wherein the light diffusing portion of the lens has a width that increases with distance from the at least one solid state light emitter, and is laterally bounded by at least one sloped or curved surface configured to cause total internal reflection of a portion of light radiation emanating from an emission center of the at least one solid state light emitter, and having an orientation configured to reflect light toward one or more light output surfaces of the lens structure.

39. 38. The solid state light emitting component of claim 37, wherein the first region of the compound refractive index portion comprises glass or sapphire.

40. 38. The solid state light emitting component of claim 37, wherein the first region of the compound refractive index portion is comprised of air or at least one gas.

41. 41. The solid state light emitting component of claim 37, further comprising a submount to which the at least one solid state light emitter is mounted, wherein a width of the unitary lens structure is less than or equal to a width of the submount at a location where the unitary lens structure is disposed in contact with the at least one solid state light emitter.

42. The at least one solid state light emitter comprises an LED chip and a lumiphoric material layer disposed over an outer surface of the LED chip, wherein a side end surface of the LED chip is free of lumiphoric material, and the solid state light emitting component comprises: a submount to which the at least one solid state light emitter is mounted; a filler material layer including a filler material and contacting a side end surface of the at least one solid state light emitter, the filler material including white or light reflective particles dispersed in a binder; Furthermore, a portion of the lumiphoric material overlapping a portion of the filler material layer; 41. The solid state light emitting component of any one of claims 37 to 40.

43. 43. The solid state light emitting component of claim 42, wherein the lumiphoric material layer, the filler material layer, and the light diffusing portion of the lens structure have substantially matched coefficients of thermal expansion (CTE) such that the difference in CTE between any two or more of the lumiphoric material layer, the filler material layer, and the light diffusing portion is in the range of less than 20%.

44. The solid state light emitting component of any one of claims 37 to 40, wherein the light diffusing portion of the lens structure comprises silicone.

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