Electro-optical elements

Abstract

A charged particle optical element for a charged particle optical module configured to direct charged particles along at least one beam path, the charged particle optical element including: a substrate including at least one aperture for the at least one beam path to pass through; at least one electronic component for providing a component side of the substrate; and an electrical connector electrically connected to the at least one electronic component and extending through the substrate, wherein the substrate includes a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to European Application No. 22201402.9, filed October 13, 2022, which is incorporated herein by reference in its entirety.

[0002]

[0002] Embodiments provided herein generally relate to charged particle optical elements, charged particle optical components, charged particle optical modules, charged particle optical devices, charged particle optical apparatus, and methods for providing electrical connections through a substrate of a charged particle optical element. [Background technology]

[0003]

[0003] When manufacturing semiconductor integrated circuit (IC) chips, unwanted pattern defects can occur on substrates (e.g., wafers) or masks during the manufacturing process, thereby reducing yield. Defects can occur, for example, as a result of optical effects and accompanying particle or other processing steps, such as etching, chemical-mechanical polishing deposition, etc. Monitoring the extent of unwanted pattern defects is therefore an important process in the manufacturing of IC chips. More generally, inspection and / or measurement of the surface of a substrate or other object / material is an important process during and / or after its manufacturing.

[0004]

[0004] Pattern evaluation systems, such as pattern inspection tools using charged particle beams, have been used to evaluate objects, for example, to detect pattern defects. These tools typically use electron microscopy techniques, such as scanning electron microscopes (SEMs). In an SEM, a primary electron beam of relatively high-energy electrons is targeted with a final deceleration step to land on the target with a relatively low landing energy. The electron beam is focused as a probing spot on the target. Interaction of the landing electrons from the electron beam with material structures at the probe spot causes electrons, such as secondary electrons, backscattered electrons, or Auger electrons, sometimes collectively referred to as signal electrons or more commonly signal particles, to be emitted from the surface. The secondary electrons generated may be emitted from the material structures of the target.

[0005]

[0005] By scanning a primary electron beam as a probe spot over the target surface, secondary electrons can be emitted across the surface of the target. By collecting these secondary electrons emitted from the target surface, a pattern inspection tool (or apparatus) can obtain an image-like signal representative of the material structure characteristics of the target surface. In such an inspection, the collected secondary electrons are detected by a detector within the apparatus. The detector generates a signal in response to the incident particles. When an area of ​​the sample is inspected, the signal includes data that is processed to generate an inspection image corresponding to the inspection area of ​​the sample. The image can include pixels. Each pixel can correspond to a portion of the inspection area. Typically, electron beam inspection apparatuses have a single beam and can be called single-beam SEMs. Attempts have been made to introduce multi-electron beam inspection into apparatuses (or "multi-beam tools") that can be called multi-beam SEMs (MBSEMs).

[0006]

[0006] Another application of electro-optical devices (or columns) is in lithography. A charged particle beam reacts with a resist layer on the surface of a substrate. By controlling the location on the resist layer at which the charged particle beam is directed, a desired pattern can be created in the resist.

[0007]

[0007] An electro-optical device may be an apparatus for generating, irradiating, projecting and / or detecting one or more beams of charged particles, the path of which is controlled by electromagnetic fields (i.e. electrostatic fields and optionally magnetic fields).

[0008]

[0008] Electrical signals (e.g., power and / or communications) may be transferred to and / or from electronic components of the electro-optical device, for example, to act on the charged particle beam and / or to process collected electron signals. Space constraints within the electro-optical device can make providing the electrical connections difficult. Summary of the Invention

[0009]

[0009] The present invention provides an architecture suitable for enabling improved electrical connections of electronic components.

[0010]

[0010] According to a first aspect of the present invention, there is provided a charged particle optical element for a charged particle optical module configured to guide charged particles along at least one beam path, the charged particle optical element comprising: a substrate including at least one aperture for at least one beam path to pass through; at least one electronic component for providing a component side of the substrate; and an electrical connector electrically connected to the at least one electronic component and extending through the substrate, wherein the substrate comprises a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

[0011]

[0011] According to a second aspect of the present invention, there is provided a method for providing an electrical connection through a substrate of a charged particle optical element for a charged particle optical module configured to guide charged particles along at least one beam path extending through at least one aperture through the substrate for at least one beam path to pass therethrough, the method comprising extending an electrical connector through a portion of the substrate having a component face provided by at least one electronic component such that the electrical connector is electrically connected to the at least one electronic component, the substrate comprising at least one aperture for at least one beam path to pass therethrough, the substrate comprising, in a direction parallel to the at least one beam path, a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extending through the thinner portion.

[0012]

[0012] According to a third aspect of the present invention, there is provided a method for providing an electrical connection through a substrate of a charged particle optical element for a charged particle optical module configured to guide charged particles along at least one beam path extending through at least one aperture through the substrate for passage of at least one beam path, the method comprising: extending an electrical connector through a portion of the substrate having a component face provided by at least one electronic component so that the electrical connector is electrically connected to the at least one electronic component; and defining at least one aperture through the substrate for passage of the at least one beam path, wherein the substrate includes, in a direction parallel to the at least one beam path, a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

[0013]

[0013] Advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which certain embodiments of the invention are set forth, by way of illustration and example, in which:

[0014]

[0014] The above and other aspects of the present disclosure will become more apparent from the description of exemplary embodiments taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 1 is a schematic diagram illustrating an exemplary electron beam evaluation apparatus. [Figure 2]

[0016] 2 is a schematic diagram illustrating an exemplary multi-beam electron optical device that is part of the exemplary electron beam evaluation apparatus of FIG. 1. [Figure 3]

[0017] 2 is a schematic diagram of an exemplary electron-optical device including a collimator element array and a scanning deflector array that is part of the exemplary electron beam evaluation apparatus of FIG. 1. [Figure 4]

[0018] 4 is a schematic diagram of an exemplary electro-optical device array including the electro-optical device of FIG. 3. [Figure 5]

[0019] 2 is a schematic diagram of an alternative exemplary electron-optical device that is part of the exemplary electron beam evaluation apparatus of FIG. 1. [Figure 6]

[0020] FIG. 6 is a schematic diagram of an exemplary electro-optical module that may be part of the electro-optical device of FIGS. 3, 4, and 5. [Figure 7]

[0021] 1 is a schematic diagram of an exemplary electron-optical element. [Figure 8]

[0022] 1 is a schematic diagram of an exemplary electron-optical element. [Figure 9]

[0023] 1 is a schematic diagram of an exemplary electron-optical element. [Figure 10]

[0024] 1 is a schematic plan view of an exemplary electron optical element. [Figure 11]

[0025] 1 is a schematic plan view of an exemplary electron optical element. [Figure 12]

[0026] 9A-9C are schematic diagrams of different stages of an exemplary method for fabricating the electro-optical device of FIG. 8. [Figure 13]9A-9C are schematic diagrams of different stages of an exemplary method for fabricating the electro-optical device of FIG. 8. [Figure 14] 9A-9C are schematic diagrams of different stages of an exemplary method for fabricating the electro-optical device of FIG. 8. [Figure 15] 9A-9C are schematic diagrams of different stages of an exemplary method for fabricating the electro-optical device of FIG. 8. [Figure 16]

[0027] 9A-9C are schematic diagrams of different stages of an exemplary method for fabricating the electro-optical device of FIG. 8. [Figure 17] 9A-9C are schematic diagrams of different stages of an exemplary method for fabricating the electro-optical device of FIG. 8. [Figure 18] 9A-9C are schematic diagrams of different stages of an exemplary method for fabricating the electro-optical device of FIG. 8. DETAILED DESCRIPTION OF THE INVENTION

[0016]

[0028] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, in which, unless otherwise indicated, identical numbers in different drawings represent identical or similar elements. The implementations described in the following description of exemplary embodiments do not represent all implementations consistent with the present invention. Instead, the implementations are merely examples of apparatus and methods consistent with aspects related to the present invention, as set forth in the appended claims.

[0017]

[0029] Significant increases in the packing density of circuit components such as transistors, capacitors, and diodes on IC chips have led to a reduction in the physical size of devices and an increase in the computing power of electronic devices. This is made possible by improved resolution, allowing for the creation of ever-smaller structures. Semiconductor IC manufacturing is a complex and time-consuming process involving hundreds of individual steps. An error at any step in the process of manufacturing an IC chip can adversely affect the functionality of the final product. Just one defect can cause device failure. Improving the overall yield of a process is desirable. For example, to achieve a 75% yield for a 50-step process (a step can refer to the number of layers formed on a wafer), each individual step must have a yield greater than 99.4%. If the yield of each individual step is 95%, the overall process yield will be as low as 7–8%.

[0018]

[0030] It is also desirable to maintain high substrate (i.e., wafer) throughput, defined as the number of substrates processed per hour. High process yields and high substrate throughput can be affected by the presence of defects. This is especially true when defects require operator intervention to examine them. High-throughput detection and identification of micro- and nanoscale defects by evaluation systems (e.g., scanning electron microscopes (“SEMs”)) is desirable to maintain high IC chip yields and low costs.

[0019]

[0031] A scanning electron microscope includes a scanning device and a detector. The scanning device includes an illumination device, including an electron source, for generating primary electrons and a projection device for scanning a target, such as a substrate, with one or more focused beams of primary electrons. The primary electrons interact with the target and generate interaction products, such as secondary electrons and / or signal particles, such as backscattered electrons. Secondary electrons may be considered to have energies up to 50 eV. Backscattered electrons range in energy from substantially zero to the maximum energy of charged particle devices, but are conventionally designated as electrons (or signal electrons) with energies greater than 50 eV. A detector captures signal particles (e.g., secondary electrons and / or backscattered electrons) from the target as it is scanned, enabling the scanning electron microscope to generate an image of the scanned area of ​​the target. Electron-optical device designs embodying these scanning electron microscope functions can have a single beam. To achieve higher throughput, such as for characterization, some device designs use multiple focused beams of primary electrons, or multibeams. The constituent beams of a multibeam may be referred to as subbeams or beamlets. The multiple beams can scan different portions of the target simultaneously, and therefore a multi-beam evaluation system can evaluate a target much more quickly than a single-beam evaluation system, for example by moving the target at a higher speed.

[0020]

[0032] In a multi-beam evaluation device, the paths of some of the primary electron beams are offset from the central axis of the scanning device, i.e., the central point of the primary electron optical axis (also referred to herein as the charged particle axis). To ensure that all electron beams arrive at the sample surface at substantially the same angle of incidence, sub-beam paths with greater radial distances from the central axis must be steered to travel through larger angles than sub-beam paths with paths closer to the central axis. This stronger steering can cause aberrations, which can blur and defocus the resulting image. One example is spherical aberration, which causes the focus of each sub-beam path to a different focal plane. In particular, for sub-beam paths that are not on the central axis, the change in the focal plane of the sub-beam becomes greater with radial displacement from the central axis. The effects of such aberrations and defocusing can remain associated with signal particles (e.g., secondary electrons) from the target when secondary electrons are detected, affecting, for example, the shape and size of the spot formed by the sub-beam on the target. Therefore, such aberrations degrade the quality of the resulting image generated during evaluation.

[0021]

[0033] Known implementations of multi-beam evaluation devices are described below.

[0022]

[0034] The figures are schematic. Accordingly, in the drawings, the relative dimensions of components are exaggerated for clarity. In the following description of the drawings, the same or similar reference numbers refer to the same or similar components or entities, and only differences relative to individual embodiments are described. While the description and drawings are directed to electron-optical devices, it is understood that the embodiments are not used to limit the present disclosure to specific charged particles. Thus, throughout this specification, references to electrons and items referred to in connection with electrons can be considered to be references to charged particles and items referred to in connection with charged particles more generally, and charged particles are not necessarily electrons.

[0023]

[0035] Reference is now made to FIG. 1, which is a schematic diagram illustrating an exemplary electron beam evaluation apparatus 100, or inspection apparatus. The evaluation apparatus 100 of FIG. 1 includes a vacuum chamber 10, a fill lock chamber 20, an electron-optical apparatus, an equipment front end module (EFEM) 30, and a controller 50. An electron-optical device 40 may be located within the vacuum chamber 10. The electron-optical apparatus may include an electron-optical device 40 (also known as an electron-optical device, electron-beam device, or electron-beam device) and a motorized or actuated stage.

[0024]

[0036] The EFEM 30 includes a first load port 30a and a second load port 30b. The EFEM 30 may include one or more additional load ports. The first load port 30a and the second load port 30b may, for example, receive substrate front-opening integrated pods (FOUPs) containing substrates (e.g., semiconductor substrates or substrates made of other materials) or targets to be evaluated (hereinafter, substrates, wafers, and samples are collectively referred to as "targets"). One or more robotic arms (not shown) within the EFEM 30 transport the targets to the load lock chamber 20.

[0025]

[0037] The load lock chamber 20 is used to remove gas from around the target. The load lock chamber 20 may be connected to a load lock vacuum pumping system (not shown), which removes gas particles within the load lock chamber 20. Operation of the load lock vacuum pumping system allows the load lock chamber to reach a first pressure below atmospheric pressure. The main chamber 10 is connected to a main chamber vacuum pumping system (not shown). The main chamber vacuum pumping system removes gas molecules within the main chamber 10 so that the pressure around the target reaches a second pressure below the first pressure. After reaching the second pressure, the target is transferred to an electron optical device 40 where it can be evaluated. The electron optical device 40 may include either a single beam or a multi-beam electron optical device.

[0026]

[0038] The controller 50 is electronically connected to the electron-optical device 40. The controller 50 may be a processor (e.g., a computer) configured to control the charged particle beam evaluation apparatus 100. The controller 50 may also include processing circuitry configured to perform various signal and image processing functions. While the controller 50 is shown in FIG. 1 as being external to the structure including the main chamber 10, the load lock chamber 20, and the EFEM 30, it is understood that the controller 50 may be part of the structure. The controller 50 may be located within one of the component elements of the charged particle beam evaluation apparatus, or the controller 50 may be distributed among at least two of the component elements. While the present disclosure provides an example of a main chamber 10 housing an electron beam evaluation apparatus, it should be noted that aspects of the present disclosure, in a broad sense, are not limited to chambers housing electron-optical devices. Rather, it is understood that the principles described above may also be applied to other apparatuses and other arrangements of apparatuses operating under a second pressure.

[0027]

[0039] Reference is now made to FIG. 2, which is a schematic diagram of a multi-beam electron-optical device 40 of an exemplary evaluation apparatus, such as the evaluation apparatus 100 of FIG. 1. In an alternative embodiment, the evaluation apparatus 100 is a single-beam evaluation apparatus. The electron-optical device 40 may include an electron source 201, a beamformer array 372 (also known as a gun aperture plate, a Coulomb aperture array, or a pre-subbeam forming aperture array), a condenser lens 310, a source converter (or micro-optic array) 320, an objective lens 331, and a target 308. In one embodiment, the condenser lens 310 is magnetic. (A single-beam evaluation apparatus may have the same features as a multi-beam evaluation apparatus, except that the electron-optical component having the array apertures 372, 320 may have a single aperture. The source converter 320 may be replaced by multiple electron-optical components along the beam path.) The target 308 may be supported by supports on a stage. The stage may be motorized. The stage moves such that the target 308 is scanned by the incident electrons. The electron source 201, the beamformer array 372 and the condenser lens 310 may be components of an illumination system included by the electron-optical device 40. The source converter 320 (also known as a source conversion unit), which will be described in more detail below, and the objective lens 331 may be components of a projection system included by the electron-optical device 40.

[0028]

[0040] The electron source 201, the beamformer array 372, the condenser lens 310, the source converter 320 and the objective lens 331 are aligned with a primary electron optical axis 304 of the electron-optical device 40. The electron source 201 is generally capable of generating a primary beam 302 along the electron optical axis 304 and with a (virtual or real) source crossover 301S. In operation, the electron source 201 is configured to emit electrons. The electrons are extracted or accelerated by an extractor and / or an anode to form the primary beam 302.

[0029]

[0041] The beamformer array 372 cuts edge electrons from the primary electron beam 302 to reduce the resulting Coulomb effect. The primary electron beam 302 can be trimmed by the beamformer array 372 into a specified number of sub-beams, such as three sub-beams 311, 312, and 313. It should be understood that this description is intended to apply to an electron-optical device 40 having any number of sub-beams, such as one, two, or four or more. In operation, the beamformer array 372 is configured to block edge electrons to reduce the Coulomb effect. The Coulomb effect can increase the size of each of the probe spots 391, 392, and 393, thereby reducing the evaluation resolution. The beamformer array 372 reduces aberrations resulting from Coulomb interactions between multiple electrons projected into the beam. The beamformer array 372 can include multiple apertures to generate multiple primary sub-beams even before the source converter 320.

[0030]

[0042] The source converter 320 is configured to convert the beam propagated by the beamformer array 372 (including sub-beams, if any) into sub-beams that are projected towards the target 308. In one embodiment, the source converter is a unit. Alternatively, the term source converter may simply be used as a general term for a group of components that form beamlets from the sub-beams.

[0031]

[0043] As shown in FIG. 2 , in one embodiment, the electron-optical device 40 includes a beam-limiting aperture array 321 having an aperture pattern (i.e., apertures arranged in an arrangement) configured to define the outer dimensions of the beamlets (or sub-beams) projected toward the target 308. In one embodiment, the beam-limiting aperture array 321 is part of the radiation source converter 320. In an alternative embodiment, the beam-limiting aperture array 321 is part of the main device's up-beam system. In one embodiment, the beam-limiting aperture array 321 splits one or more of the sub-beams 311, 312, 313 into beamlets such that the number of beamlets projected toward the target 308 is greater than the number of sub-beams propagating through the beamformer array 372. In an alternative embodiment, the beam-limiting aperture array 321 maintains the number of sub-beams incident on the beam-limiting aperture array 321, in which case the number of sub-beams may be equal to the number of beamlets projected toward the target 308.

[0032]

[0044] 2 , in one embodiment, the electro-optical device 40 includes a pre-bending deflector array 323 having pre-bending deflectors 323_1, 323_2, and 323_3 that respectively bend the sub-beams 311, 312, and 313. The pre-bending deflectors 323_1, 323_2, and 323_3 can bend the paths of the sub-beams 311, 312, and 313 onto the beam-limiting aperture array 321.

[0033]

[0045] The electron-optical device 40 may also include an image-forming element array 322 having image-forming deflectors 322_1, 322_2, and 322_3. There is a respective deflector 322_1, 322_2, and 322_3 associated with the path of each beamlet. The deflectors 322_1, 322_2, and 322_3 are configured to deflect the path of the beamlets toward the electron-optical axis 304. The deflected beamlets form virtual images (not shown) of the source crossover 301S. In the current embodiment, these virtual images are projected onto the target 308 by the objective lens 331, forming probe spots 391, 392, and 393 on the target 308. The electron-optical device 40 may also include an aberration compensator array 324 configured to compensate for aberrations that may be present in each sub-beam. In one embodiment, the aberration compensator array 324 includes lenses configured to act on each beamlet. The lens may take the form of an array of lenses. The array of lenses may act on different beamlets of the multi-beam. The aberration compensator array 324 may include, for example, a field curvature compensator array (not shown) with microlenses. The field curvature compensators and microlenses may be configured to compensate individual sub-beams for field curvature aberrations that are evident at the probe spots 391, 392, and 393, for example. The aberration compensator array 324 may include an astigmatism compensator array (not shown) with microastigmatism correctors. The microastigmatism correctors may be controlled to act on the sub-beams to compensate for astigmatism that would otherwise be present at the probe spots 391, 392, and 393, for example.

[0034]

[0046] The radiation source converter 320 may further include a pre-bending deflector array 323 having pre-bending deflectors 323_1, 323_2, and 323_3 that bend the sub-beams 311, 312, and 313, respectively. The pre-bending deflectors 323_1, 323_2, and 323_3 may bend the paths of the sub-beams onto the beam-limiting aperture array 321. In an embodiment, the pre-bending micro-deflector array 323 may be configured to bend the sub-beam paths of the sub-beams towards a direction perpendicular to the plane of the beam-limiting aperture array 321. In an alternative embodiment, the focusing lens 310 may adjust the path directions of the sub-beams onto the beam-limiting aperture array 321. The collecting lens 310 may, for example, focus (collimate) the three sub-beams 311, 312 and 313 into substantially parallel beams along the primary electron optical axis 304, such that the three sub-beams 311, 312 and 313 are substantially normally incident on the source converter 320, which may correspond to the beam-limiting aperture array 321. In such an alternative embodiment, the pre-bending deflector array 323 may not be required.

[0035]

[0047] The imaging element array 322, the aberration compensator array 324, and the pre-bending deflector array 323 may include multiple layers of sub-beam steering devices, some of which may be in the form or array of, for example, micro-deflectors, micro-lenses, or micro-astigmatism correctors. The beam path may be rotationally steered. The rotational correction may be applied by magnetic lenses. Additionally or alternatively, the rotational correction may also be realized by existing magnetic lenses, such as in a focusing lens arrangement.

[0036]

[0048] In the present example of the electron-optical device 40, the beamlets are deflected towards the electronic optical axis 304 by the deflectors 322_1, 322_2, and 322_3, respectively, of the imaging element array 322. It should be understood that the beamlet paths may already be aligned with the electronic optical axis 304 before reaching the deflectors 322_1, 322_2, and 322_3.

[0037]

[0049] The objective lens 331 focuses the beamlets onto the surface of the target 308, i.e., projects three virtual images onto the target surface. The three images formed by the three sub-beams 311-313 on the target surface form three probe spots 391, 392, and 393 on the target. In one embodiment, the deflection angles of the sub-beams 311-313 are adjusted to pass through or approach the front focus of the objective lens 331 to reduce or limit off-axis aberrations of the three probe spots 391-393. In one configuration, the objective lens 331 is magnetic. Although three beamlets are mentioned, this is merely an example. Any number of beamlets may be used.

[0038]

[0050] The manipulators are configured to manipulate one or more charged particle beams. The term manipulator encompasses deflectors, lenses, and apertures. The pre-bending deflector array 323, the aberration compensator array 324, and the imaging element array 322, individually or in combination with each other, may be referred to as manipulator arrays because they manipulate one or more sub-beams or beamlets of charged particles. The lenses and deflectors 322_1, 322_2, and 322_3 may be referred to as manipulators because they manipulate one or more sub-beams or beamlets of charged particles.

[0039]

[0051] In one embodiment, a beam separator (not shown) is provided. The beam separator may be in the down beam of the radiation source converter 320. The beam separator may be, for example, a Wien filter including an electrostatic dipole field and a magnetic dipole field. The beam separator may be in the up beam of the objective lens 331. The beam separator may be disposed between adjacent shield sections (described in more detail below) in the direction of the beam path. The inner surface of the shield may be radially inside the beam separator. Alternatively, the beam separator may be inside the shield. In operation, the beam separator may be configured to exert an electrostatic force on individual electrons of the sub-beam due to the electrostatic dipole field. In one embodiment, the electrostatic force is equal in magnitude but opposite in direction to the magnetic force acting on individual primary electrons of the sub-beam due to the magnetic dipole field of the beam separator. Thus, the sub-beams can pass through the beam separator in at least a substantially straight line with at least a substantially zero deflection angle. The direction of the magnetic force depends on the direction of electron movement, while the direction of the electrostatic force does not depend on the direction of electron movement. Therefore, because the secondary and backscattered electrons (or signal particles) generally move in the opposite direction compared to the primary electrons, the magnetic force acting on the secondary and backscattered electrons (or signal particles) no longer cancels the electrostatic force, and as a result, the secondary and backscattered electrons traveling through the beam separator are deflected away from the electron optical axis 304.

[0040]

[0052] In one embodiment, a secondary device (not shown) is provided that includes a detector element for detecting a corresponding secondary charged particle beam. When the secondary beam is incident on the detector element, the element can generate a corresponding intensity signal output. This output can be directed to an image processing system (e.g., controller 50). Each detector element can include an array that can be in the form of a grid. The array can have one or more pixels, and each pixel can correspond to an element of the array. The intensity signal output of the detector element can be the sum of signals generated by all pixels in the detector element.

[0041]

[0053] In one embodiment, a secondary projection device and an associated electron detection device (not shown) are provided. The secondary projection device and its associated electron detection device may be aligned with the secondary electron optical axis of the secondary device. In one embodiment, a beam separator is configured to deflect the path of the secondary electron beam toward the secondary projection device. The secondary projection device then focuses the path of the secondary electron beam onto multiple detection regions of the electron detection device. The secondary projection device and its associated electron detection device may use the secondary electrons or backscattered electrons (or signal particles) to register and generate an image of the target 308.

[0042]

[0054] Such a Wien filter, secondary device, and / or secondary projection device may be provided within the single beam evaluation device. Additionally and / or alternatively, a detection device may be present in the down-beam of the objective lens, for example, facing the sample during operation. In an alternative configuration, the detection device is positioned along the path of the charged particle beam toward the sample. In such a configuration, there is no Wien filter, secondary device, or secondary projection device. The detection device may be positioned at one or more positions along the path of the charged particle beam toward the sample, for example, around the path of the charged particle beam, so as to face the sample during operation. Such a detection device may have an aperture or may be annular. Different detection devices may be arranged along the charged particle path to detect signal particles with different characteristics. Electron-optical elements along the path of the charged particle beam may include one or more electrostatic plates with apertures for the path of the charged particle beam, and these electron-optical elements may be arranged and controlled to focus signal particles of different respective characteristics onto respective detector devices at different positions along the path of the charged particle beam. Such electrostatic plates may be arranged in a series of two or more adjacent plates along the path of the charged particle beam.

[0043]

[0055] In one embodiment, the evaluation device 100 includes a single radiation source.

[0044]

[0056] Any element or group of elements in the electro-optical device may be replaceable or field replaceable. One or more electro-optical components in the electro-optical device, particularly those that act on or generate sub-beams, such as the aperture array and manipulator array, may include one or more microelectromechanical systems (MEMS). The pre-bending deflector array 323 may be a MEMS. MEMS are miniature mechanical and electromechanical elements fabricated using microfabrication techniques. In one embodiment, the electro-optical device 40 includes apertures, lenses, and deflectors formed as MEMS. In one embodiment, the lenses and manipulators, such as the lenses and deflectors 322_1, 322_2, and 322_3, are passively or actively controllable as an entire array, individually, or in groups within the array, to control the beamlets of charged particles projected toward the target 308.

[0045]

[0057] In one embodiment, the electron-optical device 40 may include alternative and / or additional components on the charged particle path, such as lenses and other components as described above with reference to FIGS. 1 and 2. Examples of such configurations are shown in FIGS. 3 and 4, which are described in more detail below. In particular, an embodiment includes an electron-optical device 40 that splits a charged particle beam from a radiation source into multiple sub-beams. Multiple respective objective lenses can project the sub-beams onto the sample. In some embodiments, multiple condenser lenses are provided in the up-beam of the objective. The condenser lenses focus each sub-beam to an intermediate focus in the up-beam of the objective. In some embodiments, a collimator is provided in the up-beam of the objective. Correctors may be provided to reduce focus errors and / or aberrations. In some embodiments, such correctors are integrated with the objective or located directly adjacent to the objective. Additionally or alternatively, if a collecting lens is provided, such a corrector may be integrated with or located directly adjacent to the collecting lens, and / or located at or located directly adjacent to the intermediate focus. A detector is provided to detect charged particles emitted by the sample. The detector may be integrated into the objective lens. The detector may be on the bottom surface of the objective lens so as to face the sample in use. The detector may include an array, e.g., detecting elements, that may correspond to the array of beamlets in the multi-beam configuration. The detector (or detecting elements) in the detector array may generate detection signals that may be associated with pixels of the generated image. The collecting lens, objective lens, and / or detector may be formed as MEMS or CMOS devices.

[0046]

[0058] FIG. 3 is a schematic diagram of another design of an exemplary electro-optical device 40. The electro-optical device 40 may comprise a radiation source 201 and one or more electron-optical assemblies. Alternatively, an electro-optical apparatus including the electro-optical device 40 may comprise the radiation source 201. The electro-optical device 40 may include an upper beam limiter 252, a collimator element array 271, a control lens array 250, a scanning deflector array 260, an objective lens array 241, a beam shaping limiter 242, and a detector array. The radiation source 201 provides a beam of charged particles (e.g., electrons). Multiple beams that focus on the sample 208 are extracted from the beam provided by the radiation source 201. Sub-beams can be extracted from the beam using, for example, a beam limiter defining an array of beam-limiting apertures. The radiation source 201 is desirably a high-brightness thermal field emitter with a good compromise between brightness and total emission current.

[0047]

[0059] The upper beam limiter 252 defines an array of beam-limiting apertures. The upper beam limiter 252 may be referred to as an upper beam-limiting aperture array or an up-beam beam-limiting aperture array. The upper beam limiter 252 may include a plate (which may be a plate-like object) having a plurality of apertures. The upper beam limiter 252 forms sub-beams from the beam of charged particles emitted by the radiation source 201. Beam portions other than those contributing to forming the sub-beams may be blocked (e.g., absorbed) by the upper beam limiter 252 so as not to interfere with the down-beam sub-beams. The upper beam limiter 252 may be referred to as a sub-beam-defining aperture array.

[0048]

[0060] A collimator element array 271 is provided in the down beam of the upper beam limiter. Each collimator element collimates a respective sub-beam. The collimator element array 271 can be formed using MEMS fabrication techniques to be spatially compact. In some embodiments, as illustrated in FIG. 3, the collimator element array 271 is the first deflection or focusing electron-optical array element in the beam path in the down beam of the radiation source 201. In another configuration, the collimator can take the form, in whole or in part, of a macro-collimator. Such a macro-collimator can be in the up beam of the upper beam limiter 252, so as to act on the beam from the radiation source before generating the multiple beams. A magnetic lens can be used as the macro-collimator.

[0049]

[0061] The down beam of the collimator element array is provided with a control lens array 250. The control lens array 250 includes a plurality of control lenses. Each control lens includes at least two electrodes (e.g., two or three electrodes) connected to respective potential sources. The control lens array 250 may include two or more (e.g., three) plate electrode arrays connected to respective potential sources. The control lens array 250 is associated with the objective lens array 241 (e.g., the two arrays are located near each other and / or mechanically connected to each other and / or controlled together as a unit). The control lens array 250 is located in the up beam of the objective lens array 241. The control lenses prefocus the sub-beams (e.g., apply a focusing action to the sub-beams before they reach the objective lens array 241). Prefocusing can reduce the divergence of the sub-beams or increase the convergence rate of the sub-beams.

[0050]

[0062] As previously mentioned, the control lens array 250 is associated with the objective lens array 241. As noted above, the control lens array 250 can be considered to provide additional electrodes, e.g., electrodes 242, 243, of the objective lens array 241 as part of the objective lens array assembly. The additional electrodes of the control lens array 250 provide an additional degree of freedom in controlling the electro-optical parameters of the sub-beams. In one embodiment, the control lens array 250 can be considered to be additional electrodes of the objective lens array 241 that enable additional functionality for each objective lens of the objective lens array 241. In one configuration, such electrodes can be considered to be part of the objective lens array that provides additional functionality to the objective lenses of the objective lens array 241. In such a configuration, the control lens is considered to be part of the corresponding objective lens, and the control lens may even be referred to simply as being part of the objective lens, e.g., in terms of providing another additional degree of freedom to the objective lens. Although the control lens array 241 is indistinguishable from and may be part of the objective lens array 250, the control lens array 250 is considered herein to be distinct and separate from the objective lens array 241.

[0051]

[0063] For ease of illustration, lens arrays are generally depicted herein as arrays of ellipses. Each ellipse represents one of the lenses in the lens array. Ellipses are conventionally used to represent lenses by analogy with the biconvex shape often employed in optical lenses. However, it should be understood that in the context of charged particle mechanisms as discussed herein, lens arrays typically operate electrostatically and may not require physical elements employing a biconvex shape. As noted above, the lens array may instead include a plurality of plates having apertures.

[0052]

[0064] A scan deflector array 260 including a plurality of scan deflectors may be provided. The scan deflector array 260 may be formed using MEMS fabrication techniques. Each scan deflector causes a respective sub-beam to scan across the sample 208. Thus, the scan deflector array 260 may include a scan deflector for each sub-beam. Each scan deflector may deflect a sub-beam in one direction (e.g., parallel to a single axis, such as the X axis) or two directions (e.g., relative to two non-parallel axes, such as the X axis and the Y axis). The deflection is such that the sub-beam is scanned across the sample 208 in one or two directions (i.e., one-dimensionally or two-dimensionally). In one embodiment, the scan deflector array 260 may be implemented using the scan deflectors described in European Patent Application Publication No. 2425444, which is incorporated herein by reference in its entirety, particularly with respect to the scan deflectors. The scanning deflector array 260 (e.g., formed using MEMS fabrication techniques as described above) may be more spatially compact than a macro scanning deflector. In another configuration, a macro scanning deflector may be used in the upbeam of the upper beam limiter 252. The macro scanning deflector acts on the beam from the radiation source before the beamlets of the multi-beam are generated, and its function may be similar or equivalent to that of the scanning deflector array.

[0053]

[0065] An objective lens array 241 including multiple objective lenses is provided to direct the sub-beams toward the sample 208. Each objective lens includes at least two electrodes (e.g., two or three electrodes) connected to respective potential sources. The objective lens array 241 may include two or more (e.g., three) plate electrode arrays connected to respective potential sources. Each objective lens formed by the plate electrode arrays may be a microlens acting on a different sub-beam. Each plate defines multiple apertures (also called holes). The position of each aperture in a plate corresponds to the position of a corresponding aperture (or apertures) in the other plate (or plates). The corresponding apertures define an objective lens, and therefore, each set of corresponding apertures acts on the same sub-beam in the multi-beam when in use. Each objective lens projects a respective sub-beam of the multi-beam onto the sample 208.

[0054]

[0066] An objective lens array 241 having only two electrodes may have smaller aberrations than an objective lens array 241 having more electrodes. A three-electrode objective lens allows for a larger potential difference between the electrodes, thereby enabling a more powerful lens. Additional electrodes (i.e., three or more electrodes) provide additional degrees of freedom for controlling the electron trajectory, for example, to focus secondary electrons in addition to the incident beam. Such additional electrodes may be considered to form a control lens array 250. An advantage of a two-electrode lens over an Einzel lens is that the energy of the incident beam is not necessarily the same as the exit beam. Beneficially, the potential difference in such a two-electrode lens array allows it to function as either an acceleration or deceleration lens array.

[0055]

[0067] The objective lens array may form part of an objective lens array assembly together with any or all of the scanning deflector array 260, the control lens array 250, and the collimator element array 271. The objective lens array assembly may further include a beam-shaping limiter 242. The beam-shaping limiter 242 defines an array of beam-limiting apertures. The beam-shaping limiter 242 may be referred to as a lower beam limiter, a lower beam-limiting aperture array, or a final beam-limiting aperture array. The beam-shaping limiter 242 may include a plate (which may be a plate-like object) having multiple apertures. The beam-shaping limiter 242 is in the down beam from at least one electrode (optionally from all electrodes) of the control lens array 250. In some embodiments, the beam-shaping limiter 242 is in the down beam from at least one electrode (optionally from all electrodes) of the objective lens array 241.

[0056]

[0068] In one configuration, the beam-shaping limiter 242 is structurally integral with the electrode 302 of the objective lens array 241. The beam-shaping limiter 242 is preferably positioned in an area of ​​low electrostatic field strength. Each beam-limiting aperture is aligned with a corresponding objective lens in the objective lens array 241. This alignment is such that a portion of the sub-beam from the corresponding objective lens can pass through the beam-limiting aperture and strike the sample 208. The aperture of the beam-shaping limiter 242 may have a smaller diameter than the apertures of at least one of the objective lens array 241, the control lens array 250, the detector array 240, and the upper beam limiter array 252. Each beam-limiting aperture has a beam-limiting effect, allowing only a selected portion of the sub-beam incident on the beam-shaping limiter 242 to pass through the beam-limiting aperture. The selected portion may be such that only the portion of each sub-beam that passes through a central portion of the respective aperture in the objective lens array reaches the sample. The central portion may be circular in cross section and / or may be centered on the beam axis of the sub-beam.

[0057]

[0069] In one embodiment, the electro-optical device 40 is configured to control the objective lens array assembly (e.g., by controlling the potentials applied to the electrodes of the control lens array 250) so that the focal length of the control lens is greater than the separation distance between the control lens array 250 and the objective lens array 241. Thus, the control lens array 250 and the objective lens array 241 can be positioned relatively close to each other, in which case the focusing effect from the control lens array 250 is weak and no intermediate focus is formed between the control lens array 250 and the objective lens array 241. The control lens array and the objective lens array operate together to form a composite focal length on the same surface. The composite operation without an intermediate focus can reduce the risk of aberrations. In other embodiments, the objective lens array assembly can be configured to form an intermediate focus between the control lens array 250 and the objective lens array 241.

[0058]

[0070] A power supply may be provided to apply respective potentials to electrodes of the control lenses of the control lens array 250 and the objective lenses of the objective lens array 241 .

[0059]

[0071] The provision of the control lens array 250 in addition to the objective lens array 241 provides additional degrees of freedom in controlling the characteristics of the sub-beams. For example, this additional degree of freedom is provided even when the control lens array 250 and the objective lens array 241 are disposed relatively close to each other so that no intermediate focus is formed between them. The control lens array 250 can be used to optimize the beam divergence angle in relation to the beam demagnification ratio and / or control the beam energy delivered to the objective lens array 241. The control lens array 250 can include two or more electrodes. When there are two electrodes, the demagnification ratio and landing energy are controlled together. When there are three or more electrodes, the demagnification ratio and landing energy can be controlled individually. Note that the most down-beam electrode of the control lens array 250 can be the most up-beam electrode of the objective lens array 241. That is, the control lens array 250 and the objective lens array 241 can share electrodes. The shared electrodes provide different lens effects for each lens, with each lens effect associated with one of its two opposing surfaces (i.e., the up-beam surface and the down-beam surface). Thus, the control lens can be configured to adjust the demagnification ratio and / or beam divergence angle and / or landing energy on the substrate of each sub-beam (e.g., by applying appropriate potentials to the electrodes of the control lens and the objective lens using a power supply). This optimization can be achieved without excessively adversely affecting the number of objective lenses and without excessively worsening the aberrations of the objective lenses (e.g., without reducing the strength of the objective lenses). The use of a control lens array allows the objective lens array to be operated at an optimal electric field strength. Note that references to demagnification ratio and divergence angle are intended to refer to variations of the same parameter. In an ideal configuration, the product of the range of demagnification ratio and the corresponding divergence angle is constant. However, the divergence angle can be affected by the use of apertures.

[0060]

[0072] In one embodiment, the landing energy can be controlled to a desired value within a predetermined range, for example, 1000 eV to 5000 eV. The landing energy is preferably varied primarily by controlling the energy of the electrons exiting the control lens. The potential difference within the objective lens is preferably kept constant during this variation so that the electric field within the objective lens remains as high as possible. Furthermore, the potential applied to the control lens can be used to optimize the beam divergence angle and demagnification ratio. The control lens can function to vary the demagnification ratio to account for changes in landing energy. Preferably, each control lens includes three electrodes to provide two independent control variables. For example, one of the electrodes can be used to control the magnification ratio, and another electrode can be used to separately control the landing energy. Alternatively, each control lens can have only two electrodes. If there are only two electrodes, one of the electrodes may be required to control both the magnification ratio and the landing energy.

[0061]

[0073] A detector array (not shown) is provided to detect charged particles emitted from the sample 208. The detected charged particles may include any of the charged particles (e.g., signal particles) detected by the SEM, including secondary electrons (e.g., emitted) and / or backscattered electrons from the sample 208. The detector may be an array serving a surface of the electron-optical device facing the sample 208, such as the bottom surface of the electron-optical device. Alternatively, the detector array may be in the up-beam of the bottom surface or, for example, in or on the objective lens array or control lens array. Elements of the detector array may correspond to beamlets in a multi-beam configuration. Signals generated by detection of electrons by elements of the array are sent to a processor to generate an image. The signals may correspond to pixels of the image.

[0062]

[0074] In other embodiments, there may be provided both a macro scan deflector and a scan deflector array 260. In such a configuration, scanning of the sub-beams over the sample surface may be achieved by controlling the macro scan deflector and the scan deflector array 260 together, preferably synchronously.

[0063]

[0075] In one embodiment, an electron-optical device array 500 is provided, as illustrated in FIG. 4 . The array 500 may include a plurality of any of the electron-optical devices described herein. Each electron-optical device simultaneously focuses a respective multibeam onto a different region of the same sample. Each electron-optical device may form multiple sub-beams from a single charged particle beam from a different respective radiation source 201. Each respective radiation source 201 may be a radiation source in a plurality of radiation sources 201. At least a subset of the plurality of radiation sources 201 may be provided as a radiation source array. The radiation source array may include multiple radiation sources 201 disposed on a common substrate. Simultaneously focusing multiple multibeams onto different regions of the same sample can increase the area of ​​the sample 208 that is simultaneously processed (e.g., evaluated). The electron-optical devices in the array 500 may be positioned adjacent to each other to project each multibeam onto adjacent regions of the sample 208.

[0064]

[0076] Any number of electro-optical devices may be used in array 500. The number of electro-optical devices is preferably in the range of 2, preferably 9, to 100 or even 200. In one embodiment, the electro-optical devices are arranged in a rectangular array or a hexagonal array. In other embodiments, the electro-optical devices are provided in an irregular array or a regular array having a shape other than rectangular or hexagonal. Each electro-optical device in array 500 may be configured in any of the manners described herein when referring to a single electro-optical device, for example, with respect to the embodiment shown and described above, particularly with reference to FIG. 5 . Details of such configurations are described in European Patent Application Publication No. A20184161.6, filed July 6, 2020, which is incorporated herein by reference with respect to methods for incorporating and adapting objective lenses for use in multi-device configurations.

[0065]

[0077] In the example of FIG. 4, array 500 includes multiple electro-optical devices of the type described above with reference to FIG. 3. Thus, each electro-optical device in this example includes both a scan deflector array 260 and a collimator element array 271. As noted above, scan deflector array 260 and collimator element array 271 are particularly well-suited for incorporation into electro-optical device array 500 due to their spatial compactness, which facilitates locating electro-optical devices close to one another. This configuration of electro-optical devices may be preferable over other configurations that use magnetic lenses as collimators. Incorporating magnetic lenses into electro-optical devices intended for use in a multi-device configuration (e.g., a multi-column configuration) can be difficult due to, for example, magnetic interference between the columns.

[0066]

[0078] An alternative design of the multi-beam electron-optical device may have the same features as those described with respect to FIG. 3 , but with differences as described below and illustrated in FIG. 5 . An alternative design of the multi-beam electron-optical device may include a condenser lens array 231 in the up-beam of the objective lens array configuration 241, as disclosed in European Patent Application Publication No. 20158804.3, filed February 21, 2020, which is incorporated herein by reference for its description of a multi-beam device with a collimator and its components. Such a design does not require the beam-shaping limiter array 242 or the upper beam limiter array 252, because the beam-limiting aperture array associated with the condenser lens array 231 can shape the beamlets 211, 212, 213 of the multi-beam from the beam of the radiation source 201. The beam-limiting aperture array of the condenser lens may also function as an electrode in the lens array.

[0067]

[0079] The paths of beamlets 211, 212, 213 diverge away from the collector lens array 231. The collector lens array 231 focuses the generated beamlets to an intermediate focus between the collector lens array 231 and the objective lens array assembly 241 (i.e., towards the control lens array and the objective lens array). The collimator array 271 can be at the intermediate focus instead of being associated with the objective lens array assembly 241.

[0068]

[0080] The collimator can reduce the divergence of the diverging beamlet paths. The collimator can collimate the diverging beamlet paths so that the beamlet paths are substantially parallel toward the objective lens array assembly. The corrector array can be present in the multi-beam path, for example, associated with the condenser lens array, intermediate focus, and objective lens array assembly. The detector 240 can be integrated into the objective lens 241. The detector 240 can be on the bottom surface of the objective lens 241 so that it faces the sample during use.

[0069]

[0081] In an embodiment of the configuration shown in and described with reference to FIG. 5, the detector may be located in approximately the same location within the electro-optical device 40 as shown in and described with reference to the electro-optical device of FIG. 3. The detector 240 may be integrated into the objective lens array 241 and the control lens array 250 (if present, not shown in FIG. 5). There may be multiple detectors at different locations along the paths of the multiple sub-beams of the multi-beam, with each detector associated with a different electro-optical element, such as an electrode in the objective lens array and / or control lens array. The objective lens array 241 and associated electro-optical elements, such as the control lens array 250, may be included within an integrated assembly, sometimes referred to as the electro-optical assembly 700, or an assembly that may be the electro-optical module 55. In one embodiment, the detector 240 is associated with or even integrated into a planar element of the electro-optical module 55. For example, the detector 240 may be on the bottom surface of the electro-optical module 55 that includes the objective lens 241. The detector 240 may be equipped with an electrical connector 60, as described elsewhere herein. In a variant, the detector comprises a detector array arranged in the up-beam of the objective lens array (and optionally the control lens array 250), for example in the up-beam of the electron-optics module 55. Between the electron-optics module 55 and the detector array there may be a Wien filter array, which directs the charged particle beam in a down-beam direction towards the sample and directs signal particles from the sample to the detector array.

[0070]

[0082] The electro-optical device array may have multiple multi-beam devices of this design as described with reference to the multi-beam device of FIG. 3, as shown in FIG. 4. Multiple multi-beam devices may be arranged in an array of multi-beam devices. Such a configuration is shown and described in European Application No. 20158732.6, filed February 21, 2020, which is incorporated herein by reference for its multi-device configuration of a multi-beam device featuring a multi-beam device design disclosed with a collimator at an intermediate focus. Further alternative designs for multi-beam devices include multiple single-beam devices. For purposes of the invention described herein, a single beam generated may resemble or be equivalent to multiple beams generated by a single device. Each device may have an associated detector. Such multi-device devices may be arranged in an array of 3, 4, 9, 19, 50, 100, or even 200 devices, each generating a single beam or beamlet (for a single-beam device) or multiple beams (for a multi-beam device). In this further alternative design, the array of devices may have a common vacuum system, each device may have a separate vacuum system, or different vacuum systems may be assigned to different groups of devices.

[0071]

[0083] The electron-optical device 40 may be a component of an evaluation apparatus (e.g., for inspection, metrology, metrology inspection, or any other type of evaluation), or part of an electron beam lithography apparatus or other type of charged particle induced sample patterning apparatus. Multi-beam charged particle apparatus may be used in many different applications, including scanning electron microscopy, but also electron microscopy in general, and lithography.

[0072]

[0084] The electron optical axis 304 represents the path of the charged particles through the radiation source 201 and output from the radiation source 201. All sub-beams and beamlets of the multi-beam may be substantially parallel to the electron optical axis 304, at least through the manipulator or electron optical array, for example, in the configuration shown in and described with reference to FIG. 2, unless explicitly stated otherwise. The electron optical axis 304 may be the same as or different from the mechanical axis of the electron optical device 40. In the context of the configuration shown in and described with reference to FIGS. 2-5, the electron optical axis may correspond to the path of a central beam of the multi-beam, e.g., beam 212. The beams of the multi-beam are substantially parallel to each other (e.g., along the electron optical axis 304) between the collimation (e.g., the location of the collimator array 271 or the location of the upper beam limiter 252 corresponding to the plane of intermediate focus (e.g., as shown in FIG. 5)) and the surface of the sample 208.

[0073]

[0085] 6 to manipulate the electron beamlets. For example, the electron optical module 55 may include one or more of (as a non-limiting list): the objective lens array 241, and / or the condenser lens array 231, and / or the collimator element array 271, and / or individual beam correctors, and / or deflectors, and / or Wien filter arrays. In particular, the objective lens 331 and / or the condenser lens 310 and / or the control lens 250 may include the electron optical module 55.

[0074]

[0086] The electro-optical module 55 is configured to create a potential difference between two or more plates (or substrates). An electrostatic field is generated between the plates, which act as electrodes. The electrostatic field creates an attractive force between the two plates. The attractive force can increase as the potential difference increases.

[0075]

[0087] Figure 6 shows a schematic of the electron-optics module 55. The electron-optics module 55 is configured to direct electrons along at least one beam path toward the sample position. In the orientation shown in Figure 6, the at least one beam path extends vertically from top to bottom through the center of the electron-optics module 55. There may be one beam path corresponding to one electron beam. Alternatively, there may be multiple beam paths corresponding to multiple electron sub-beams of a multi-beam.

[0076]

[0088] As shown in FIG. 6 , in one embodiment, the electron-optics module 55 includes multiple planar elements positioned across the beam path. In one embodiment, one or more of the planar elements are electron-optical elements 60. The electron-optical elements 60 are configured to act on one or more electron beams. As shown in FIG. 6 , in one embodiment, all of the planar elements are electron-optical elements 60. Alternatively, one or more of the planar elements may be planar elements other than electron-optical elements. For example, one or more of the planar elements may be elements that do not require a voltage to be applied to them to perform their function, or the planar elements may require a voltage to be applied such that the potential difference between the element and adjacent elements along the beam path is substantially zero. One example is a planar element that is a beam-limiting aperture array containing apertures sized to shape the electron beam. For example, the apertures may allow electron beams of a particular shape to pass through while preventing other electrons from transmitting through the beam-limiting aperture array. As a further alternative, the planar element configured to shape the electron beam may have a potential difference relative to the up-beam and / or down-beam planar elements such that, in addition to the beam-shaping function, an electromagnetic field affects the electron beam.

[0077]

[0089] As shown in FIG. 6 , in one embodiment, the electro-optical module 55 includes one or more spacers 70. The spacers 70 are configured to mechanically support the planar elements. As shown in FIG. 6 , in one embodiment, the spacers 70 are configured to mechanically separate the planar elements, such as the electro-optical elements 60, from one another. In one embodiment, the spacers 70 are configured to electrically insulate the planar elements, such as the electro-optical elements 60, from one another. However, it is not necessary for the spacers 70 to provide electrical insulation. For example, two adjacent electro-optical elements 60 may be positioned to operate at the same voltage (i.e., there is no potential difference between them), in which case electrical insulation may not be required. In one embodiment, one or more pairs of adjacent planar elements are directly adjacent to one another (i.e., without an intermediate spacer 70). The spacers 70 are an optional feature.

[0078]

[0090] The electron beam is configured to pass through a beam area 62 of the electron optical module 55. As shown in Figure 6, the beam area 62 may be located in a central portion of the electron optical module 55. The beam area 62 is generally centrally located when viewed in a direction parallel to at least one beam path. The beam area 62 is centrally located when viewed in a direction perpendicular to the plane of the planar element.

[0079]

[0091] In one embodiment, the electro-optical module 55 is included in an electro-optical device 40, such as the electro-optical device 40 shown in FIG. 2, FIG. 3, or FIG. 5. In one embodiment, the electro-optical module 55 is field replaceable. The electro-optical module 55 can be removed from and / or inserted into the electro-optical device 40 without requiring substantial disassembly of other portions of the electro-optical device 40. That is, the electro-optical module 55 may be removable from and / or insertable into the electro-optical device 40.

[0080]

[0092] In one embodiment, the electron-optics module 55 comprises an objective lens assembly including an objective lens array 241. The electron-optics module 55 may further comprise a control lens array 250, a detector 240, and / or a deflector array. In an alternative embodiment, the electron-optics module 55 may be a condenser lens assembly. The electron-optics module 55 may comprise a condenser lens array 231. The electron-optics module 55 may further comprise, for example, one or more of a deflector array, a beam-limiting aperture array.

[0081]

[0093] Figure 7 is a schematic diagram of an electron-optical element 60. Figure 7 is a schematic cross-sectional side view of the electron-optical element 60. The aspect ratio used in Figure 7 has been chosen to make some features of the electron-optical element 60 more apparent.

[0082]

[0094] The electro-optical element 60 is for an electro-optical module 55, such as the electro-optical module 55 shown in FIG. 6. As shown in FIG. 7, in one embodiment, the electro-optical element 60 includes a substrate 61. The substrate 61 may be a plate. The substrate 61 may be substantially planar. In one embodiment, the substrate 61 includes a semiconductor material. In one embodiment, the substrate 61 includes silicon.

[0083]

[0095] As shown in FIG. 7 , in one embodiment, the substrate 61 includes at least one aperture 63. As shown in FIG. 7 , the apertures 63 extend through the substrate 61. Each aperture 63 is for at least one beam path to pass through. For example, FIG. 7 shows multiple apertures 63. Each aperture 63 may allow one electron beam or a group of electron beams to pass through it. FIG. 7 schematically shows five apertures 63. The number of apertures 63 may be much greater than five. As shown in FIG. 7 , the apertures 63 are provided in the beam area 62 of the electron optical element 60. In an alternative embodiment, there may be only one aperture 63. For example, the electron optical device 40 including the electron optical element 60 may be configured to direct a single electron beam toward a sample position. Alternatively, the single aperture 63 may be for multiple sub-beams of a multi-beam (or beam grid) to pass through. The electron-optical element 60 with a single aperture 63 may be a macro element, for example configured to act on all sub-beams of a multi-beam.

[0084]

[0096] 7, in one embodiment, the electron-optical element 60 includes at least one electronic component 64. The at least one electronic component 64 may be referred to as an active electronic component. The electronic component may be configured to operate with voltages applied to it during use of the electron-optical element 60. The electronic component 64 may be configured to act on one or more electron beams passing through the beam area 62. Additionally or alternatively, the at least one electronic component 64 may be configured to detect signal electrons from the sample location.

[0085]

[0097] As shown in FIG. 7 , in one embodiment, at least one electronic component 64 provides a component surface of the substrate 61. In the configuration shown in FIG. 7 , the electronic component 64 provides a down-beam surface of the substrate 61. The substrate 61 may include two major surfaces. One of the major surfaces is an up-beam major surface at the up-beam end of the substrate 61. This is the top surface of the substrate in the orientation shown in FIG. 7 . The other major surface is a down-beam major surface. This is the bottom surface of the substrate 61 in the orientation shown in FIG. 7 . The major surface of the substrate 61 is substantially planar. The major surface extends across the beam path. An aperture 63 passes through the major surface of the substrate 61. The component surface provided by the at least one electronic component 64 is the major surface of the substrate 61. In the example shown in FIG. 7 , the component surface is at the down-beam major surface of the substrate 61. The down-beam major surface of the substrate 61 includes the component surface. The component surface forms part (but not all) of the down-beam major surface. In an alternative embodiment, the component surface may be on the up-beam major surface of the substrate 61 .

[0086]

[0098] As shown in FIG. 7 , in one embodiment, the electronic-optical device 60 includes an electrical connector 65. The electrical connector 65 is electrically connected to at least one electronic component 64. As shown in FIG. 7 , in one embodiment, the electrical connector 65 is directly electrically connected to the electronic component 64. The electrical connector 65 may be physically connected to the electronic component 64. However, it is not necessary that the electrical connection between the electrical connector 65 and the electronic component 64 be direct. For example, as described in more detail below, the electrical connector 65 may be indirectly electrically connected to the electronic component 64 (see, e.g., FIG. 9 ). An intermediate component may be provided for the electrical connection between the electrical connector 65 and the at least one electronic component 64.

[0087]

[0099] 7, an electrical connector extends through the substrate 61. The electrical connector 65 may be disposed to extend between two major surfaces of the substrate 61. The electrical connector 65 may electrically connect the up beam surface of the substrate 61 and the down beam surface of the substrate 61. In one embodiment, the electrical connector is a via. The electrical connector 65 includes a conductive material. For example, the electrical connector 65 may be a through silicon via (TSV).

[0088]

[0100] As shown in FIG. 7 , in one embodiment, the substrate 61 includes a thicker portion 66 and a thinner portion 67. The thinner portion 67 is thinner than the thicker portion 66. The thickness direction of the substrate 61 may be parallel to at least one beam path. The thickness direction may be parallel to the longitudinal direction of the at least one aperture 63. The thickness direction may be perpendicular to the plane of the substrate 61. The thicker portion 66 is thicker than the thinner portion 67 in the direction parallel to the beam path. The thinner portion 67 is thinner than the thicker portion 66 in the direction perpendicular to the plane of the substrate 61.

[0089]

[0101] 7, in one embodiment, the electrical connector 65 extends through a thinner portion 67 of the substrate 61. The portion of the substrate 61 where the electrical connector 65 is provided may be thin, while other portions of the substrate 61 may be thicker. An embodiment of the present invention is expected to make it easier to provide an electrical connector through a thick electro-optical element 60. It is easier to provide the electrical connector 65 through a thinner substrate. By providing a locally thin region in the substrate 61, the electrical connector 65 can be added more easily without having to thin the entire substrate 61.

[0090]

[0102] An embodiment of the present invention is expected to make it easier to fabricate an electro-optical element 60 with both an aperture 63 and an electrical connector 65 therethrough. It is easier to form an aperture, such as at least one aperture 63 shown in Figure 7, through a thicker substrate. By providing both a thicker portion 66 and a thinner portion 67 in the substrate 61, both the aperture 63 and the electrical connector 65 can be provided through the substrate 61 in a relatively simple manner.

[0091]

[0103] An embodiment of the present invention is expected to make it easier to electrically connect the major surfaces of the electro-optical element 60 without unduly making it difficult to moderate the temperature of the electro-optical element 60. During use, the electro-optical element 60 may heat up. For example, the electron beam may heat the substrate 61 due to interactions between the electron beam and the substrate 61. The electro-optical element 60 may heat up, particularly within and around the beam area 62. In addition, active electronics, such as at least one electronic component 64, may heat the substrate 61. A thicker substrate has a higher thermal conductivity, preferably laterally. A thicker substrate is better suited to transferring heat laterally (i.e., perpendicular to the electron beam) through the substrate 61, preferably toward the peripheral edge of the substrate 61. Thus, a thicker substrate makes it easier to remove thermal energy from the sides of the electro-optical element 60, thereby moderate the temperature of the electro-optical element 60. By providing locally thinner portions 67, electrical connectors 65 can be more easily added and / or fabricated without excessively reducing the thermal conductivity of the entire substrate 61 by thinning the entire substrate 61.

[0092]

[0104] 7, in one embodiment, the thicker portion 66 includes at least one aperture 63. The aperture 63 may be provided in the thicker portion 66 where it is easier to form or define the aperture 63. It is expected that one embodiment of the present invention will make it easier to provide an aperture 63 in an electro-optical element 60 whose major surfaces are electrically connected to one another.

[0093]

[0105] As shown in FIG. 7 , in one embodiment, the electrical connector 65 extends substantially parallel to the at least one beam path. The at least one beam path may be substantially perpendicular to the plane of the substrate 61. By providing the electrical connector parallel to the at least one beam path, the electrical connector 65 can be as short as possible while still providing electrical connection between the up and down beam surfaces of the substrate 61. It is not necessary for the electrical connector 65 to be exactly parallel to the at least one beam path. For example, the electrical connector 65 may be positioned at an angle to the beam path. For example, the electrical connector 65 may be positioned obliquely when viewed in a cross-sectional side view. The electrical connector 65 may have a longitudinal direction. The electrical connector 65 may be longer in the thickness direction of the substrate 61 (i.e., the direction parallel to the beam path) than in the lateral direction (i.e., the direction parallel to the plane of the substrate 61). Alternatively, the electrical connector 65 may be wider than it is long. For example, if the thinner portion 67 of the substrate 61 is particularly thin, the electrical connector 65 may not need to be very long. The length direction of the electrical connector 65 corresponds to the thickness direction of the substrate 61 .

[0094]

[0106] As shown in FIG. 7 , in one embodiment, the component surface provided by at least one electronic component 64 is the surface of a thicker portion 66 of a substrate 61. FIG. 7 illustrates a transition 80 where the thickness of the substrate 61 changes between the thicker portion 66 and the thinner portion 67. The transition 80 may correspond to a step change in the thickness of the substrate 61. The transition 80 may form a discontinuity in the thickness of the substrate 61. As shown in FIG. 7 , the transition 80 may be a sharp transition. Alternatively, the transition may be more gradual. For example, the thickness of the substrate 61 may gradually change from the thickness of the thicker portion 66 to the thickness of the thinner portion 67. In the configuration shown in FIG. 7 , the transition 80 is formed by a single step change. The step change may include an intermediate angled slope where the thickness varies between the thicker portion 66 and the thinner portion 67. In alternative embodiments, transition 80 may include multiple steps, for example, intermediate angled sections or sections of uniform thickness between thicker section 66 and thinner section 67 .

[0095]

[0107] In the view shown in FIG. 7 , the substrate 61 on the left side of the transition 80 corresponds to the thicker portion 66. The substrate 61 on the right side of the transition 80 corresponds to the thinner portion 67. As shown in FIG. 7 , the at least one electronic component 64 may be at least partially on the left side of the transition 80, i.e., at least partially part of the thicker portion 66. As shown in FIG. 7 , in one embodiment, a portion of the component surface provided by the at least one electronic component 64 is a surface of the thinner portion 67. This is shown in FIG. 7 , where a portion of the at least one electronic component 64 is on the right side of the transition 80, i.e., part of the thinner portion 67. Alternatively, the component surface may be entirely part of the thicker portion 66 (see, for example, FIG. 9 ). In a further alternative embodiment, the at least one electronic component 64 may provide its entire component surface as part of the thinner portion 67. By providing the component surface in the thicker portion 66, the component surface can be provided within and around the beam area 62. The at least one electronic component 64 may directly interact with the electron beam within the beam area 62.

[0096]

[0108] 7, in one embodiment, at least one electronic component 64 is located adjacent to at least one aperture 63. In one embodiment, a component face surrounds at least one aperture 63. For example, the component face may be proximate to at least one aperture 63. The component face may be adjacent to at least one aperture 63. For example, the component face may include one or more electrodes at each aperture 63.

[0097]

[0109] As shown in Figure 7, in one embodiment, component faces are provided on all of the apertures 63. Alternatively, component faces may be provided on only a subset of the apertures 63, such as on one or more of the apertures 63. As shown in Figure 7, in one embodiment, at least one of the apertures 63 is defined on the component face. The aperture 63 may extend through the component face provided by at least one electronic component 64. The at least one electronic component 64 may include one or more electrodes that define one or more of the apertures 63. The electrodes may act on the electron beam passing through the aperture 63.

[0098]

[0110] For example, in one embodiment, the at least one electronic component 64 includes one or more deflectors. Each deflector may be configured to act on the electron beam (or electron beams) passing through a respective aperture 63. The deflectors may be configured to control the direction of the electron beams in the down-beam of the electron-optical element 60. For example, the deflectors may be configured to control where the electron beams are incident on the down-beam electron-optical element 60 or on the sample position. The deflectors may be configured to control whether one or more electron beams pass through an aperture of the down-beam planar element or whether one or more electron beams are blocked by the down-beam planar element.

[0099]

[0111] In one embodiment, the at least one electronic component 64 includes a multipole. The multipole may include multiple electrodes for each aperture 63. The multipole may be configured to correct one or more parameters of the electron beam passing through the aperture 63. For example, in one embodiment, the multipole may be an astigmatism corrector configured to properly shape the electron beam passing through the aperture 63.

[0100]

[0112] In one embodiment, the at least one electronic component 64 includes one or more detector elements, which may be configured to detect a current of signal electrons from the sample location.

[0101]

[0113] In one embodiment, the at least one electronic component 64 comprises one or more aberration compensators or correctors. The aberration compensators may be formed in an aberration compensator array. In one embodiment, the aberration compensators may be configured to act on individual apertures 63. For example, the aberration compensators may be configured to control field curvature and / or astigmatism of the electron beam.

[0102]

[0114] As shown in FIG. 7 , in one embodiment, the electronic-optical components include an electronic-optical element 60 and electronic circuitry (e.g., included on a printed circuit board (PCB) 68). As shown in FIG. 7 , the electronic circuitry is connected to an electrical connector 65. As shown in FIG. 7 , in one embodiment, the electronic circuitry (e.g., PCB 68) is arranged such that the electronic circuitry and at least one electronic component 64 are located on opposite sides of the substrate 61 in a direction parallel to at least one beam path. In the configuration shown in FIG. 7 , the PCB 68 is provided on the up-beam side of the substrate 61. The at least one electronic component 64 is provided on the down-beam side of the substrate 61. However, it is not necessary for the PCB 68 to be on the up-beam side. In an alternative embodiment, the PCB 68 is provided on the down-beam side of the substrate 61.

[0103]

[0115] As shown in Figure 7, in one embodiment, the electronic circuitry is included on a PCB 68. The PCB may be secured to the substrate 61. For example, the PCB 68 may be fixed to the substrate 61. In one embodiment, the PCB 68 is glued to the substrate 61. The PCB 68 may be secured to a major surface of the substrate 61. The PCB 68 may overlap a portion of the major surface of the substrate 61. As shown in Figure 7, in one embodiment, the PCB 68 extends laterally beyond the peripheral outer edge of the substrate 61.

[0104]

[0116] In one embodiment, the electronic circuit is configured to transfer power to the at least one electronic component 64. For example, the electronic circuit may be electrically connected to a power source configured to provide power to the at least one electronic component 64 via the electronic circuit. Additionally or alternatively, the electronic circuit may be configured to transfer a signal to the at least one electronic component 64. For example, in one embodiment, the electronic circuit is configured to provide a control signal to the electronic component 64. The control signal may be, for example, a control signal for controlling the gain and / or offset of an analog-to-digital converter (ADC) included in the at least one electronic component 64. In one embodiment, the electronic circuit is configured to transfer a signal from the electronic component 64. For example, in one embodiment, the electronic circuit is configured to transfer a signal indicative of a current of signal electrons detected at the substrate 61.

[0105]

[0117] 7, in one embodiment, the electrical connector 65 is directly connected to the PCB 68. The electrical connector 65 may be directly connected to at least one electronic component 64 and the PCB 68.

[0106]

[0118] FIG. 8 is a schematic diagram of an alternative configuration of the electro-optical element 60. The configuration shown in and described with reference to FIG. 8 may employ the features and functions of the configuration shown in and described with reference to FIG. 7 unless otherwise noted. As shown in FIG. 8 , in one embodiment, the electro-optical element 60 includes a conductive layer 69. The conductive layer 69 may be supported by a substrate 61. In one embodiment, the conductive layer 69 includes a conductive material such as a metal, particularly a metal with low resistivity (e.g., copper, aluminum, or gold). The conductive layer 69 may be a layer formed on a major surface of the substrate 61. For example, as shown in FIG. 8 , in one embodiment, the conductive layer 69 is a layer on the up-beam major surface of the substrate 61. The conductive layer 69 is electrically connected to an electrical connector 65. The connection between the conductive layer 69 and the electrical connector 65 may be direct. The conductive layer 69 may also be mechanically connected to the electrical connector 65.

[0107]

[0119] In one embodiment, the conductive layer 69 is configured to transfer signals to and from the electrical connector 65. For example, the conductive layer 69 may be configured to transfer power signals and / or communication signals (e.g., control signals) from electronic circuitry within the PCB 68 to the at least one electronic component 64 via the electrical connector 65. In one embodiment, the conductive layer 69 is configured to transfer communication signals (e.g., data signals) from the electronic component 64 to the electronic circuitry within the PCB 68 via the electrical connector 65. The conductive layer 69 may be soldered or wirebonded to the PCB 68, for example.

[0108]

[0120] In one embodiment, electro-optical device 60 includes a plurality of electrical connectors 65 extending through substrate 61. In one embodiment, conductive layer 69 includes a plurality of traces. A trace may be for each electrical connector 65. For example, in one embodiment, each of the plurality of electrical connectors 65 is electrically connected to PCB 68 via a respective trace of conductive layer 69.

[0109]

[0121] In one embodiment, the conductive layer 69 is a coating on the substrate 61. The conductive layer is for electrically connecting the electrical connector 65. The conductive layer 69 may be configured to distribute signals laterally, i.e., parallel to the plane of the substrate 61. The conductive layer 69 is sometimes referred to as a redistribution layer. The conductive layer 69 may be configured to redistribute signals across the substrate 61.

[0110]

[0122] In one embodiment, the at least one electronic component 64 includes multiple layers of electronic circuitry. The layers may be located within the substrate 61 (e.g., as a CMOS device). As shown in Figure 8, the electrical connections for the at least one electronic component 64 are further towards the periphery of the substrate 61 than the at least one electronic component 64. In one embodiment, a conductive layer 69 is on the substrate 61 and is electrically connected to the electrical connections.

[0111]

[0123] The electrical connections are external electrical connections to the conductive layer 69. In one embodiment, the electrical connections are electrical connectors 65 that are electrically connected to at least one electronic component 64 and extend through the substrate 61. Alternatively, the electrical connections may be for electrically connecting components on the same side of the substrate 61. In one embodiment, the conductive layer 69 extends between the component face and the electrical connections.

[0112]

[0124] In one embodiment, the conductive layer 69 is electrically connected to the electrical connector 65 and the electrical connection (e.g., PCB 68). As shown in Figure 8, in one embodiment, the conductive layer 69 is on a different side of the substrate 61 than the component side. The electrical connector 65 extends through the substrate 61 between the electrical connection (e.g., PCB 68) and the at least one electronic component 64.

[0113]

[0125] In one embodiment, the conductive layer 69 and / or the at least one electronic component 64 comprises one or more electrical elements for processing signals transmitted to and / or from the at least one electronic component, such as a transimpedance amplifier (TIA), a filter, and / or an ADC.

[0114]

[0126] Figure 10 is a schematic plan view of an electron optical element 60. The electron optical element 60 may be, for example, the electron optical element 60 shown in Figure 8. Figure 10 is a view in a direction parallel to at least one beam path. The view in Figure 10 is from the up-beam side of a substrate 61.

[0115]

[0127] As shown in FIG. 10 , in one embodiment, the electro-optical element 60 includes one or more connector regions 75. A connector region 75 is an area where multiple electrical connectors 65 can be located. The electrical connectors 65 may be positioned relatively close to one another within the connector region 75. FIG. 10 shows three connector regions 75 positioned around the beam area 62. In one embodiment, the number of connector regions 75 is one, two, four, or more than four. In the configuration shown in FIG. 10 , the connector regions 75 are shown as being substantially longitudinal. Alternatively, the connector regions 75 may be a substantially closed shape, such as, for example, a square, hexagon, or circle, or at least a portion of two or more sides of such a shape.

[0116]

[0128] 10 , the conductive layer 69 includes a plurality of traces configured to electrically connect the connector regions 75 to the PCB 68. In one embodiment, a plurality of traces on the conductive layer 69 is configured to connect each connector region 75 to the PCB 68. In one embodiment, a separate trace may be provided for each electrical connector 65. One or more of the traces may be provided on the surface of the substrate 61 facing the sample.

[0117]

[0129] 10 , in one embodiment, beam area 62 is located between connector regions 75. Connector regions 75 are located in thinner portions 67 of substrate 61. Beam area 62 is located in thicker portions 66 of substrate 61. A transition 80 between thinner portions 67 and thicker portions 66 is located between beam area 62 and connector regions 75.

[0118]

[0130] As shown in FIG. 10 , in one embodiment, thicker portion 66 may have a rectangular shape when viewed in a direction parallel to at least one beam path. Alternatively, thicker portion 66 may have a different shape, such as a semicircular shape or a rectangle with rounded corners. As shown in FIG. 10 , in one embodiment, thinner portion 67 extends around three sides of thicker portion 66 when viewed in a plan view. Alternatively, thinner portion 67 may extend along only one side of thicker portion 66 (e.g., if two connector regions 75 shown in the bottom half of FIG. 10 are omitted), or along only two sides of thicker portion 66 (e.g., if one of connector regions 75 shown in the bottom half of FIG. 10 is omitted), or along all four sides of thicker portion 66. In another embodiment, the only portions of the substrate 61 having a thinner thickness are around the respective connector regions 75 and, optionally, the conductive regions extending across the surface of the substrate, for example, when the conductive layer 69 is present on the opposite side of the substrate 61 from the at least one electronic component 64 as described herein. In such a configuration, the PCB 68 may be secured to the substrate 61 around the periphery, such as the side of the electro-optical module 55, such as the substrate 61. The thinner portions 67 may be trenches around the connector regions 75 and, optionally, at least a portion of the conductive layer 69. An embodiment may have the thinner portions 67 of any size between these extremes. However, it should be noted that a smaller thinner portion is desirable to optimize, e.g., maximize, the area of ​​the thicker portions 66 to improve the structural integrity of the substrate 61. As mentioned above, the electro-optical device 60 shown in FIG. 10 may have a structure such as that shown in FIG. 8. For example, the conductive layer 69 may be present on the opposite side of the substrate 61 from the at least one electronic component 64. As a result, the at least one electronic component 64 is not shown in FIG. 10. In an alternative embodiment, the conductive layer 69 may be on the same side of the substrate 61 as the at least one electronic component 64 .

[0119]

[0131] As shown in FIG. 8 , in one embodiment, the conductive layer 69 is configured to electrically connect the electrical connector 65 to another component that is further away from the at least one aperture 63. The distance between the aperture 63 and the other component is greater than the distance between the aperture 63 and the electrical connector 65. For example, as shown in FIG. 8 , in one embodiment, the other component that is further away from the aperture 63 is a PCB 68. The conductive layer 69 is configured to electrically connect the electrical connector 65 to the PCB 68. Alternatively, or in addition, the conductive layer 69 may be configured to electrically connect the electrical connector 65 to other electronic circuitry, such as an image data processor and / or a power supply, that may be provided on the PCB 68 or that may be electrically connected to the conductive layer 69 via the PCB 68. In one embodiment, all electrical connections of the electronic components 64 within or around the beam area 62 may be routed through the conductive layer 69, the electrical connector 65, and the PCB 68, for example, even if one or more external and / or remote components are provided over (i.e., not on) the PCB 68. The conductive layer 69 is configured to electrically connect the electrical connector 65 near the beam area to one or more components spaced farther away from the beam area 62 .

[0120]

[0132] FIG. 9 is a schematic diagram of another configuration of the electro-optical element 60. The configuration shown in and described with reference to FIG. 9 may employ the features and functions of the configuration shown in and described with reference to FIG. 8 unless otherwise noted. As shown in FIG. 9, in one embodiment, the conductive layer 69 is located on one side of the substrate 61. For example, in the configuration shown in FIG. 9, the conductive layer 69 is located on the down-beam side (e.g., the primary down-beam surface) of the substrate 61. As shown in FIG. 9, in one embodiment, at least one electronic component 64 is located on the same side of the substrate 61. Both the conductive layer 69 and the electronic component 64 are located on the same side of the substrate 61.

[0121]

[0133] 9 , in one embodiment, the conductive layer 69 is directly connected to the at least one electronic component 64. In one embodiment, the conductive layer 69 is located between the electrical connector 65 and the electronic component 64. The electrical connector 65 may be electrically connected to the at least one electronic component 64 through the conductive layer 69. The conductive layer 69 may include a plurality of traces configured to electrically connect each electrical connector 65 to the at least one electronic component 64.

[0122]

[0134] The conductive layer 69 may contact multiple layers of the at least one electrical component. The conductive layer 69 may be directly connected to a metal layer of multiple layers of the at least one electrical component 64. The at least one electronic component 64 may have terminals for electrical connection that are dimensionally smaller than those of components external to the electro-optical device 60 (e.g., for chip packaging). The conductive layer 69 may act as an interposer, bridging the component surface dimensions to the packaging dimensions. The conductive layer 69 may match the pitch densities of different chip routing technologies.

[0123]

[0135] As shown in FIGS. 7-9 , in one embodiment, the electrical connector 65 is spaced apart from the beam area 62. As shown in FIG. 9 , in one embodiment, the electrical connector 65 is indirectly electrically connected to the at least one electronic component 64. The conductive layer 69 may electrically connect the electrical connector 65 to the at least one electronic component 64. One embodiment of the present invention is expected to simplify extending the electrical connector 65 through the substrate 61 when manufacturing the electro-optical device 60. By providing the conductive layer 69 intermediate between the electrical connector 65 and the at least one electronic component 64, the electrical connector 65 does not need to be directly electrically connected to the at least one electronic component 64. It may be difficult to form a hole in which the electrical connector 65 is to be disposed in a required layer (e.g., a lower layer) of the at least one electronic component 64. By providing the electrical connector 65 so that it is electrically connected to the conductive layer 69, the hole for the electrical connector 65 can be more easily formed through the substrate 61.

[0124]

[0136] An embodiment of the present invention is expected to make it easier to moderate the temperature of the electronic-optical component 60. As shown in FIG. 9 , by providing the conductive layer 69 on the same side of the substrate 61 as the at least one electronic component 64, the electrical connector 65 can be located further away from the beam area 62. The transition 80 between the thicker portion 66 and the thinner portion 67 can be located further away from the beam area 62. A larger percentage of the substrate 61 may be formed by the thicker portion 66 (e.g., compared to FIG. 8 ). The volume of the substrate 61 may be increased, for example, compared to the electronic-optical element 60 shown in FIG. 8 . The average thickness of the substrate 61 may be increased, for example, compared to the electronic-optical element 60 shown in FIG. 8 . In general, a thicker substrate may generally provide a higher lateral thermal conductivity in the lateral direction (i.e., the transfer of heat in a direction substantially parallel to the plane of the substrate 61). In general, a thicker substrate 61 provides a larger cross-sectional area for the thermal path in the lateral direction. This may help, for example, to dissipate heat from the beam area 62 and the at least one electronic component 64 more efficiently towards the periphery of the substrate 61. This may help to remove thermal energy from the sides of the electronic-optical module 55. This may help to moderate the temperature of the electronic-optical component 60.

[0125]

[0137] One embodiment of the present invention is expected to simplify providing electrical connections for electronic components located in space-constrained locations. By providing an electrical connector 65 connecting two sides of the substrate 61, the electronic component 64 can be electrically connected on the opposite side of the electro-optical element 60, where there may be more space. For example, in one embodiment, the electro-optical element 60 may be the most down-beam electro-optical element of the electro-optical device 40. There may be only a small gap in the down-beam of the electro-optical component 60 relative to the sample 208. Alternatively, there may be only a small gap in the down-beam of the electro-optical element 60 relative to the next component in the electro-optical device 40. The electrical connector 65 provides electrical contact to the other, more accessible side of the substrate 61. The other side of the substrate 61 may be laterally accessible, for example, via a PCB 68 from outside the electro-optical module 55, for example, at or adjacent to a spacer 70, for example, on the side of the electro-optical module 55. For example, in the configuration shown in FIG. 8, the conductive layer 69 is present on the more accessible side of the substrate 61. The conductive layer 69 does not take up space on the other side of the substrate 61, for example on the surface of the substrate 61 that may face the sample, where space may be more constrained.

[0126]

[0138] One embodiment of the present invention is expected to reduce the possibility of electrical interference with the electron beams. Conductive layer 69 allows spacer 70 to be connected further radially outward to substrate 61 (e.g., compared to FIG. 7 ) while avoiding conflict with PCB 68. By allowing spacer 70 to be further from beam area 62, the possibility of electrical interference with at least one electron beam is reduced.

[0127]

[0139] 9, in one embodiment, conductive layer 69 is at least partially on thicker portion 66 of substrate 61 and at least partially on thinner portion 67 of substrate 61. When viewed in plan, conductive layer 69 may cross a transition 80 between thicker portion 66 and thinner portion 67.

[0128]

[0140] As shown in FIGS. 7-10 , in one embodiment, the thinner portion 67 of the substrate 61 extends to the peripheral edge of the substrate 61. The PCB 68 may be secured to a major surface of the thinner portion 67 and extend beyond the peripheral edge of the substrate 61. In one embodiment, the thinner portion 67 extends toward the at least one aperture 63. In one embodiment, the thinner portion 67 extends toward the at least one electronic component 64. A transition 80 between the thinner portion 67 and the thicker portion 66 may be spaced from the beam area 62. As shown in FIG. 9 , in one embodiment, the transition 80 is spaced from the at least one electronic component 64. Alternatively, as shown in FIG. 8 , in one embodiment, the at least one electronic component 64 extends across the transition 80 when viewed in a direction parallel to the at least one beam path. In one embodiment, if the conductive layer 69 is on a different side of the substrate 61 from the at least one electronic component 64, the thinner portion 67 extends to overlap the component surface. As shown in FIG. 8 , in one embodiment, the component surface formed by at least one electronic component 64 is configured to overlap conductive layer 69 when the component surface and conductive layer 69 are on different sides of substrate 61. As shown in FIG. 9 , in one embodiment, thinner portion 67 extends to be spaced apart from the component surface. Thinner portion 67 and the component surface do not overlap. Conductive layer 69 may be on the same side as the component surface. In one embodiment, at least a portion of conductive layer 69 is on the component surface provided by at least one electronic component 64. Traces of conductive layer 69 may be connected to terminals (e.g., electrodes, contacts, or contact points) of at least one electronic component 64.

[0129]

[0141] In one embodiment, the at least one electronic component 64 is embedded in the substrate 61. Alternatively, the at least one electronic component 64 may be fixed to the substrate 61. In one embodiment, the substrate 61 comprises the at least one electronic component 64. For example, in one embodiment, the at least one electronic component 64 includes multiple layers. A layer may be a layer of a circuit. For example, in one embodiment, the at least one electronic component 64 includes a CMOS circuit.

[0130]

[0142] In one embodiment, the CMOS circuit includes a metal layer or multiple metal layers. The metal layer may include, for example, one or more electrodes, which may provide a surface of the CMOS circuit on the substrate 61 that may face the sample during operation. For example, the metal layer may include a detector element configured to detect signal electrons. The detector element may be referred to as a capture electrode. The capture electrode is an example of a sensor unit for detecting signal electrons. Power and control signals for the CMOS may be connected to the CMOS by electrical connector 65. The CMOS circuit may include, for example, a logic layer in one or more layers different from the one or more electrodes. The logic layer may include amplifiers such as TIAs, ADCs, and / or readout logic.

[0131]

[0143] FIG. 11 schematically illustrates an alternative configuration of the electron-optical element 60. The view illustrated in FIG. 11 is a view along a direction parallel to at least one beam path. As shown in FIG. 10, in one embodiment, the beam area 62 forms a circular shape when viewed in plan. This circular shape is formed by apertures 63, for example, as an aperture array on the surface of the beam area 62. As shown in FIG. 11, in an alternative embodiment, the beam area 62 is hexagonal when viewed in plan. Alternatively, the beam area 62 may be, for example, square or rectangular, or any other desired closed shape, which is preferably regular, for example, a shape with similarly sized sides.

[0132]

[0144] As shown in FIG. 11 , it is not necessary for the thinner portion 67 to extend to the peripheral edge of the substrate 61. In one embodiment, the PCB 68 surrounds the beam area 62 in a plan view. The PCB 68 may include a central hole. The beam area 62 may be located within the central hole of the PCB 68 when viewed in a plan view. The electrical connector 65 may be located within the central hole of the PCB 68 when viewed perpendicular to the plane of the substrate 61. As shown in FIG. 11 , in one embodiment, the electrical connector 65 is positioned to surround the beam area 62. The conductive layer 69 can provide a short connection between the electronic circuitry of the PCB 68 and the electrical connector 65. The electro-optical device 60 shown in FIG. 11 can have a structure similar to that shown in FIG. 8 . For example, the conductive layer 69 can be located on the opposite side of the substrate 61 from the at least one electronic component 64. As a result, the at least one electronic component 64 is not shown in FIG. 11 . In an alternative embodiment, the conductive layer 69 may be on the same side of the substrate 61 as the at least one electronic component 64 .

[0133]

[0145] The present invention may be embodied as a method for providing electrical connections through a substrate 61 of an electro-optical device 60. In one embodiment, the method includes extending an electrical connector 65 through a portion of the substrate 61.

[0134]

[0146] 12-15 schematically illustrate different steps of a method for fabricating an electro-optical device 60. As shown in FIG. 12, in one embodiment, the method includes providing a portion of a substrate. For example, a substrate portion 81 is provided. The substrate portion 81 has a component surface provided by at least one electronic component 64. The substrate portion 81 forms a portion of the substrate 61 of the electro-optical device 60 once the electro-optical device 60 is fabricated. The substrate portion 81 may be a substrate. The substrate portion 81 may be planar. In one embodiment, the substrate portion 81 has the same size and shape as the substrate 61 of the completed electro-optical device 60 when viewed in plan. The substrate portion 81 has a thickness equal to the thickness of the thinner portion 67 of the substrate 61. The substrate portion 81 forms the thinner portion 67.

[0135]

[0147] 13 , in one embodiment, the method includes extending an electrical connector 65 through a substrate portion 81 such that the electrical connector 65 is electrically connected to at least one electronic component 64. In one embodiment, a hole is formed through the substrate portion 81. The hole may extend to a bottom layer of the at least one electronic component 64. The electrical connector 65 may be inserted into a hole (or through-opening or through-hole) through the substrate portion 81, and, for example, a material may be deposited inside the hole to fill the hole and form the electrical connector 65. The electrical connector 65 may be a via or a metal connector. The electrical connector 65 may be composed of a conductive material such as a metal, particularly a metal with a low resistivity (e.g., copper, aluminum, or gold).

[0136]

[0148] 13, in one embodiment, the method includes applying a conductive layer 69. The conductive layer 69 is for connecting to an electrical connector 65. In one embodiment, the conductive layer 69 is applied after extending the electrical connector 65 through the substrate portion 81.

[0137]

[0149] In one embodiment, the conductive layer 69 is for electrically connecting to at least one electronic component 64. In one embodiment, the conductive layer 69 is configured to extend between an electronic circuit board (e.g., PCB 68) on a different side of the substrate 61 than the component side.

[0138]

[0150] In one embodiment, extending electrical connector 65 includes, for example, etching through-holes through substrate portion 81 before conductive layer 69 is formed. The through-holes are filled with a conductive material, such as a metal. Alternatively, in one embodiment, conductive layer 69 is applied before electrical connector 65 is connected through substrate portion 81.

[0139]

[0151] As shown in FIG. 14 , in one embodiment, the method includes fastening two substrate portions 81, 82 together to form the substrate 61. The combined thickness of the substrate portions 81, 82 may be equal to the thickness of the thicker portion 66 of the substrate 61. The added substrate portion 82 may have a size and shape equal to the size and shape of the thicker portion 66 of the substrate 61 when viewed in a plan view. As shown in FIG. 14 , in one embodiment, the peripheral edge of at least one of the two substrate portions 81, 82 is aligned in a direction perpendicular to the plane of the substrate 61. In one embodiment, the two substrate portions 81, 82 are fastened together by a substrate bonding process. In one embodiment, the two substrate portions 81, 82 are fastened together by overlapping the two substrate portions 81, 82 with respect to the thicker portion 66 of the substrate 61. In one embodiment, the thinner portion 67 is formed from one of the two substrate portions. The portion of the substrate portion 81 that does not overlap the other substrate portion 82 forms the thinner portion 67 of the substrate 61.

[0140]

[0152] In one embodiment, securing the two substrate portions 81, 82 together occurs after extending the electrical connector 65 through the substrate portion 81. One embodiment of the present invention is expected to make it easier to fabricate the electro-optical device 60. It may be easier to perform the process on a substrate having a substantially uniform thickness. By adding the electrical connector 65 before bonding the two substrate portions 81, 82 together, the process of applying the electrical connector 65 may be performed on a substrate having a substantially uniform thickness. This may simplify the process. In one embodiment, the conductive layer 69 is applied before the substrate portions 81, 82 are bonded together. It may be easier to apply the conductive coating 69 to a substrate of substantially uniform thickness.

[0141]

[0153] As shown in Figure 15, in one embodiment, the method includes defining at least one aperture 63 through substrate 61. Aperture 63 is for at least one beam path to pass through. As shown in Figure 15, in one embodiment, multiple apertures 63 are formed in beam area 62. Aperture 63 may be formed through thicker portion 66 of substrate 61. Aperture 63 may be formed through both substrate portions 81, 82 so as to extend through the entire thickness of substrate 61.

[0142]

[0154] In one embodiment, electrical connector 65 extends through substrate 61 before at least one aperture 63 is defined through thicker portion 66 of substrate 61 .

[0143]

[0155] In one embodiment, a method for fabricating an electro-optical component includes securing a PCB 68 to a substrate 61. The PCB 68 may be electrically connected to a conductive layer 69. An electro-optical component such as that shown in FIG.

[0144]

[0156] 12 to 15, a method for fabricating the electro-optical element 60 has been described. The fabricated electro-optical element 60 may have a configuration as shown in FIG.

[0145]

[0157] In an alternative embodiment, the electro-optical element 60 to be fabricated may have a configuration as shown in Figure 9, for example. The method of fabricating such an electro-optical element 60 may be as described with reference to Figures 12 to 15, with the following differences: The conductive layer 69 may be formed on the same side of the substrate portion 81 as the component surface provided by the at least one electronic component 64.

[0146]

[0158] 12-15, it is not necessary that the electrical connector 65 and conductive layer 69 be provided before the substrate portions 81, 82 are adhered together. In alternative embodiments, the substrate portions 81, 82 may be secured together before extending the electrical connector 65 through the thinner portion 67. Additionally or alternatively, the substrate portions 82, 81 may be secured together before the conductive layer 69 is applied.

[0147]

[0159] In one embodiment, an electro-optical element 60 may be fabricated as shown in Figure 7. The method for fabricating such an electro-optical element 60 may be as described with reference to Figures 12 to 15, with the following differences: the conductive layer 69 may be omitted.

[0148]

[0160] 15-18, another method for providing electrical connections through a substrate 61 of an electro-optical device 60 will be described. As shown in FIG. 16, in one embodiment, the method includes providing a substrate 61. The substrate 61 has a component side provided with at least one electronic component 64. In one embodiment, the method includes forming the component side by forming the electronic component 64. The provided substrate 61 can have the same thickness as the desired thickness of the substrate 61 in the electro-optical device 60 to be fabricated.

[0149]

[0161] 17, in one embodiment, the method includes defining at least one aperture 63 through a substrate 61. The aperture 63 is for at least one beam path to pass through. The aperture 63 extends through the entire thickness of the substrate 61.

[0150]

[0162] 18, in one embodiment, the method includes removing material from the substrate body to form a thinner portion 67 of the substrate 61. For example, in one embodiment, the material is removed by etching. For example, a dry etching process may be used. Alternatively, a wet etching process may be used. Alternatively, the material may be removed by grinding or cutting, for example.

[0151]

[0163] In one embodiment, aperture 63 is defined before material is removed from the substrate body. If the substrate has a substantially uniform thickness, it may be easier to define aperture 63 through substrate 61. One embodiment of the present invention is expected to make it easier to fabricate electro-optical element 60.

[0152]

[0164] In one embodiment, the method includes extending an electrical connector 65 through a portion of the substrate 61. For example, the electrical connector 65 may extend through a thinner portion 67 of the substrate 61 shown in Figure 18 to provide an electro-optical element 60 as shown in Figure 15. As shown in Figure 15, in one embodiment, the method includes applying a conductive layer 69.

[0153]

[0165] In one embodiment, material is removed from the substrate body before extending the electrical connector 65 through the thinner portion 67 of the substrate. After removing material from the substrate body, it is easier to form the electrical connector 65 through the thinner portion of the substrate. In one embodiment, the removal of material occurs after at least one aperture 63 is defined through the thicker portion 66 of the substrate 61.

[0154]

[0166] In one embodiment, aperture 63 is protected while material is removed from the substrate body to form thinner portion 67 of substrate 61. For example, a protective cover or material may be provided to act as a barrier to protect aperture 63.

[0155]

[0167] The fabricated electro-optical element 60 may have a structure as shown in FIG. 8, for example. In an alternative embodiment, an electro-optical element 60 as shown in FIG. 9 may be fabricated. The method for fabricating the electro-optical element 60 shown in FIG. 9 may be the same as the method described in connection with FIGS. 15-18, with the following differences: The conductive layer 69 may be applied to the same side of the substrate 61 as the at least one electronic component 64. The conductive layer 69 may be for electrically connecting to the at least one electronic component 64. In one embodiment, the conductive layer 69 extends between the electrical connector 65 and the at least one electronic component 64 (or a component surface provided by the at least one electronic component 64).

[0156]

[0168] In an alternative embodiment, an electro-optical element 60 may be fabricated having a structure as shown in Figure 7. The method for fabricating such an electro-optical element 60 may be as described above in relation to Figures 15-18, with the following differences: The conductive layer 69 may be omitted.

[0157]

[0169] In one embodiment, the at least one aperture 63 is formed by etching the at least one aperture 63 through the substrate 61. In one embodiment, the at least one aperture 63 is formed through a thicker portion 66 of the substrate 61. In one embodiment, the at least one aperture 63 is formed using deep reactive ion etching, such as the Bosch process.

[0158]

[0170] The electron-optics module 55 may include or be a lens assembly for manipulating the electron beamlets. The lens assembly may be, for example, an objective lens assembly or a condenser lens assembly, or may be part of an objective lens assembly or a condenser lens assembly. A lens assembly, such as an objective lens assembly, may further include an additional lens array including at least two plates, such as the control lens array 250.

[0159]

[0171] In one embodiment, at least one of the electro-optical elements 60 includes a microelectromechanical component. In one embodiment, the electro-optical module 55 includes one or more electro-optical elements, including elements that may be referred to as microelectromechanical components (even though such components may not include moving or movable features) or elements some of which may be fabricated using techniques suitable for fabricating microelectromechanical components designed to have electro-optical functionality (e.g., "MEMS" techniques). The electro-optical module 55, or at least components of the electro-optical module 55, may be fabricated by such techniques. The electro-optical module 55 may include one or more elements that may be considered MEMS elements. One or more of such elements may be controlled to be set to a high potential difference relative to a reference potential (e.g., ground) during use. Such elements may be electrically connected to one or more voltage sources for supplying voltages to the elements. In one embodiment, a controller is configured to control the voltages applied to the elements. Such elements may require precise positioning (e.g., alignment) within the electron-optical module 55, e.g., with respect to the path of the beam grid, and with respect to other electron-optical elements within the device, e.g., with respect to the radiation source, with respect to the sample and / or the path of the beam grid. An embodiment of the present invention is expected to enable more precise positioning (e.g., alignment) of such elements within a stack of such electron-optical modules 55, e.g., during operation, without distortion of the electron-optical module 55, e.g., due to externally applied forces or moments. Additionally or alternatively, an embodiment of the present invention may enable more precise positioning (e.g., alignment) of such elements, and thus of a stack of electron-optical modules 55 including such elements, within the electron-optical device 40, with respect to other elements within the electron-optical device 40.

[0160]

[0172] As mentioned above, in one embodiment, the electron-optical module 55 is an electron-optical lens assembly. The electron-optical lens assembly may include an objective lens assembly. The electron-optical lens assembly may be an objective lens assembly. In an alternative embodiment, the electron-optical lens assembly is an electron-optical condenser lens assembly.

[0161]

[0173] In one embodiment, the electron-optics module 55 includes a collimator. For example, in one embodiment, the electron-optics module 55 includes a magnetic collimator in combination with an electrostatic focusing lens array. The electron-optics module 55 may also include a single aperture lens array with one or two macroelectrodes positioned away from the virtual source conjugate plane.

[0162]

[0174] In an alternative embodiment, the electron-optics module 55 includes a magnetic macro-lens in combination with an electrostatic slit deflector. The magnetic macro-lens may be for collimation. As a further alternative, in one embodiment, the electron-optics module 55 includes a combination of a magnetic macro-lens, an electrostatic macro-lens, and a down-beam slit deflector.

[0163]

[0175] In general, the electron-optics module 55 may include any plate such as a detector array plate, a lens electrode plate (which may have multiple deflectors integrated), multiple deflector arrays, a beam aperture array (e.g., an upper beam aperture array and / or a final beam limiting array), a deflector array (e.g., a strip deflector array), and other types of corrector elements.

[0164]

[0176] The embodiments described herein have focused primarily on multi-beam electron-optical devices 40. The present invention is equally applicable to single-beam electron-optical devices 40.

[0165]

[0177] The plurality of electro-optical devices may be included in an electro-optical device array, the electro-optical devices of which are preferably configured to simultaneously focus each of the multiple beams onto different regions of the same sample.

[0166]

[0178] While the invention has been described in connection with various embodiments, other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. For example, as described above, in one embodiment, the substrate has portions of different thicknesses, and the electrical connector extends through the thinner portions. However, the thickness of the substrate may instead be uniform. The electrical connections for the electronic component may be further toward the periphery of the substrate than the electronic component, and the conductive layer may be electrically connected to the electrical connections. It is intended that the specification and examples be considered merely exemplary, with a true scope and spirit of the invention being indicated by the following claims.

[0167]

[0179] The above description is intended to be illustrative and not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made as described without departing from the scope of the claims and clauses set forth below.

[0168]

[0180] While the invention has been described in connection with various embodiments, other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the invention being indicated by the following claims and clauses.

[0169]

[0181] The following provisions are provided: Clause 1. A charged particle optical element for a charged particle optics module configured to direct charged particles along at least one beam path, the charged particle optical element comprising: a substrate including at least one aperture for passage of at least one beam path; at least one electronic component for providing a component side of the substrate; an electrical connector electrically connected to the at least one electronic component and extending through the substrate; Including, A charged particle optical element, wherein the substrate includes a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

[0170] Clause 2. The charged particle optical element of clause 1, wherein the thicker portion includes at least one aperture.

[0171] Clause 3. A charged particle optical element according to clause 1 or 2, wherein the electrical connector extends substantially parallel to at least one beam path.

[0172] Clause 4. A charged particle optical element according to any one of the preceding clauses, wherein the component surface is a surface of a thicker portion of the substrate in a direction parallel to at least one beam path.

[0173] Clause 5. A charged particle optical element according to any one of the preceding clauses, wherein at least one electronic component is located adjacent to the at least one aperture, preferably with a component face surrounding the at least one aperture.

[0174] Clause 6. A charged particle optical element described in any one of the preceding clauses, comprising a conductive layer supported by a substrate and connected to an electrical connector, preferably the conductive layer being a coating on the substrate that electrically connects the electrical connector.

[0175] Clause 7. A charged particle optical element as described in clause 6, wherein the conductive layer is arranged such that in a direction parallel to at least one beam path, the conductive layer and the at least one electronic component are located on opposite sides of the substrate.

[0176] Clause 8. A charged particle optical element according to clause 6 or 7, wherein the conductive layer is configured to electrically connect the electrical connector to another component further away from the at least one aperture.

[0177] Clause 9. A charged particle optical element as described in clause 6, wherein the conductive layer is located on one side of the substrate and at least one electronic component is located on the same side of the substrate in a direction parallel to at least one beam path.

[0178] Clause 10. The charged particle optical element of clause 6 or 9, wherein the conductive layer is configured to electrically connect the electrical connector to at least one electronic component.

[0179] Clause 11. A charged particle optical element described in any one of clauses 6 to 10, wherein the conductive layer is at least partially on the thicker portion and at least partially on the thinner portion in a direction parallel to at least one beam path.

[0180] Clause 12. A charged particle optical element according to any one of the preceding clauses, wherein the thinner portion of the substrate extends to the peripheral edge of the substrate, and preferably the thinner portion extends towards the at least one aperture and / or the at least one electronic component.

[0181] Clause 13. A charged particle optical element according to clause 12, wherein when the conductive layer is on a different side of the substrate than the at least one electronic component, the thinner portion extends to overlap the component surface.

[0182] Clause 14. A charged particle optical element according to clause 12 or 13, wherein the component surface is configured to overlap the conductive layer when the conductive layer is on a different side of the substrate from the at least one electronic component.

[0183] Clause 15. A charged particle optical element according to any one of the preceding clauses, wherein at least one electronic component comprises one or more detector elements configured to detect signal charged particles, and preferably each electronic component is a detector element.

[0184] Clause 16. A charged particle optical element according to any one of the preceding clauses, wherein at least one electronic component comprises one or more deflectors and / or one or more correctors configured to act on at least one beam path, and preferably each electronic component is a deflector and / or corrector and comprises, for example, a plurality of electrodes around each aperture of the at least one aperture.

[0185] Clause 17. A charged particle optical element according to any one of the preceding clauses, wherein at least one electronic component is integrated into the substrate or at least one electronic component is fixed to the substrate, preferably the substrate contains at least one electronic component.

[0186] Clause 18. A charged particle optical element according to any one of the preceding clauses, wherein the electrical connectors are vias.

[0187] Clause 19. A charged particle optical element according to any one of the preceding clauses, wherein at least one electronic component comprises multiple layers, preferably multiple layers of circuitry, for example at least one electronic component comprises a CMOS circuit.

[0188] Clause 20. A charged particle optical element according to any one of the preceding clauses, comprising a microelectromechanical component.

[0189] Clause 21. A charged particle optical element according to any one of the preceding clauses; an electronic circuit electrically connected to the electrical connector, the electronic circuit and the at least one electronic component being positioned on opposite sides of the substrate in a direction parallel to the at least one beam path; 2. A charged particle optical component comprising:

[0190] Clause 22. A charged particle optical component according to clause 19, wherein the electronic circuitry is included in a printed circuit board fixed to the substrate.

[0191] Clause 23. A charged particle optical component according to clause 20, wherein the printed circuit board extends beyond the peripheral edge of the substrate.

[0192] Clause 24. A charged particle optics module configured to direct charged particles along at least one beam path towards a sample position, the charged particle optics module comprising a charged particle optics element according to any one of clauses 1 to 18 or a charged particle optics component according to any one of clauses 19 to 21.

[0193] Clause 25. A charged particle optics module as described in clause 22, comprising at least one of a deflector array including individual deflectors configured to controllably act on the beam path, a beam stop array including an array of apertures for passage of the beam path, an objective lens array configured to focus charged particles onto a sample position, and a focusing lens array configured to generate multiple charged particle beams from a radiation source beam and / or focus the multiple beams at an intermediate focal plane.

[0194] Clause 26. A charged particle optical device for directing charged particles to a sample location, the charged particle optical device comprising a charged particle optical module according to clause 23.

[0195] Clause 27. A charged particle optical apparatus comprising a charged particle optical module according to clause 23 or a charged particle optical device according to clause 24.

[0196] Clause 28. A charged particle optical apparatus according to clause 25, further comprising an actuatable stage for supporting the sample at the sample location.

[0197] Clause 29. A method for providing electrical connections through a substrate of a charged particle optical element for a charged particle optical module configured to direct charged particles along at least one beam path extending through at least one aperture through the substrate for passage of the at least one beam path, the method comprising: extending the electrical connector through a portion of the substrate having a component surface provided by the at least one electronic component such that the electrical connector is electrically connected to the at least one electronic component; Including, A method in which the substrate includes at least one aperture for at least one beam path to pass through, the substrate includes a thicker portion and a thinner portion that is thinner than the thicker portion in a direction parallel to the at least one beam path, and the electrical connector extends through the thinner portion.

[0198] Clause 30. A method for providing electrical connections through a substrate of a charged particle optical element for a charged particle optical module configured to direct charged particles along at least one beam path extending through at least one aperture through the substrate for passage of the at least one beam path, the method comprising: extending an electrical connector through a portion of the substrate having a component side provided by the at least one electronic component such that the electrical connector is electrically connected to the at least one electronic component; defining at least one aperture through the substrate for passage of at least one beam path; Including, The method, wherein the substrate includes, in a direction parallel to at least one beam path, a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

[0199] Clause 31. A method according to clause 29 or 30, comprising clamping two substrate portions together to form a substrate.

[0200] Clause 32. The method of clause 31, wherein the securing includes overlapping the two substrate portions to the thicker portion, preferably forming the thinner portion from one of the two substrate portions.

[0201] Clause 33. A method according to clause 31 or 32, wherein the fixing occurs after extending the electrical connector through one of the two substrate portions and / or before defining at least one aperture through the thicker portion.

[0202] Clause 34. A method according to clause 29 or 30, comprising removing material from a body of the substrate to form a thinner portion of the substrate.

[0203] Clause 35. The method of clause 34, wherein the removing occurs prior to extending the electrical connector through the thinner portion of the substrate and / or after defining at least one aperture through the thicker portion.

[0204] Clause 36. The method of any one of clauses 29 to 35, wherein a conductive layer is applied after extending the electrical connector, the conductive layer being for connecting to the electrical connector.

[0205] Clause 37. The method of any one of clauses 29 to 36, wherein extending the electrical connector includes etching a through hole through a portion of the substrate and filling the through hole with a conductive material.

[0206] Clause 38. A method according to any one of clauses 29 to 37, wherein the at least one aperture is formed by etching at least one aperture through the substrate, preferably through a thicker portion.

[0207] Clause 39. A charged particle optical element for a charged particle optics module configured to direct charged particles along at least one beam path, the charged particle optical element comprising: a substrate including at least one aperture for passage of at least one beam path; at least one electronic component configured to provide a component side of the substrate and including multiple layers of electronic circuitry (preferably within the substrate), wherein at least one aperture is defined in the component side; an electrical connection for the at least one electronic component that is directed further toward the periphery of the substrate than the at least one electronic component; a conductive layer overlying the substrate and electrically connected to the electrical connection; A charged particle optical element comprising:

[0208] Clause 40. A charged particle optical element according to clause 39, preferably wherein the conductive layer is a coating on the substrate that electrically connects the electrical connector.

[0209] Clause 41. A charged particle optical element as described in clause 39 or 40, wherein the electrical connection is an electrical connector [or via] electrically connected to at least one electronic component and extending through the substrate, preferably with a conductive layer extending between the component face and the electrical connection, preferably with the conductive layer contacting multiple layers of at least one electrical component.

[0210] Clause 42. A charged particle optical element as described in clause 39 or 40, wherein the electrical connector extends through the substrate, preferably a conductive layer is electrically connected to the electrical connector and the electrical connection, preferably the conductive layer is on a different side of the substrate from the component side, and preferably the electrical connector extends through the substrate between the electrical connection and at least one electronic component.

[0211] Clause 43. A charged particle optical element as described in clause 41 or 42, wherein the substrate has a thinner portion and a thicker portion (having a larger dimension in the direction of the beam path), the electrical connector extending through the thinner portion, and at least one aperture extending through the ticker portion.

[0212] Clause 44. A charged particle optical element according to clause 41 or 42, wherein the electrical connector is configured to transmit power and / or control signals to at least one component and / or to transmit data signals from at least one component.

[0213] Clause 45. A charged particle optical element described in any one of clauses 39 to 43, wherein the conductive layer is configured to transmit power and control data to at least one electronic component and / or to transmit data signals from at least one component.

[0214] Clause 46. A charged particle optical element according to any one of clauses 39 to 44, wherein the conductive layer and / or at least one component comprises one or more electrical elements for processing signals transmitted to and / or from the at least one electronic component, such as a transimpedance amplifier, a filter, and / or an analog-to-digital converter.

Claims

1. 1. A charged particle optical element for a charged particle optics module configured to direct charged particles along at least one beam path, the charged particle optical element comprising: a substrate including at least one aperture through which the at least one beam path passes; at least one electronic component for providing a component side of the substrate; an electrical connector electrically connected to the at least one electronic component and extending through the substrate; Including, A charged particle optical element, wherein the substrate includes a thicker portion and a thinner portion that is thinner than the thicker portion, and the electrical connector extends through the thinner portion.

2. The charged particle optical element of claim 1 , wherein the thicker portion comprises the at least one aperture.

3. 3. The charged particle optical element according to claim 1, wherein the electrical connector extends substantially parallel to the at least one beam path.

4. A charged particle optical element according to any one of claims 1 to 3, wherein the component surface is a surface of the thicker portion of the substrate in a direction parallel to the at least one beam path.

5. 5. A charged particle optical element according to any one of claims 1 to 4, wherein the at least one electronic component is located adjacent to the at least one aperture, preferably with a component surface surrounding the at least one aperture.

6. A charged particle optical element according to any one of claims 1 to 5, comprising a conductive layer supported by the substrate and connected to the electrical connector, preferably the conductive layer being a coating on the substrate that electrically connects the electrical connector.

7. 7. The charged particle optical element of claim 6, wherein the conductive layer is arranged such that the conductive layer and the at least one electronic component are located on opposite sides of the substrate in a direction parallel to the at least one beam path.

8. 8. The charged particle optical element according to claim 6 or 7, wherein the conductive layer is configured to electrically connect the electrical connector to another component further from the at least one aperture.

9. 9. A charged particle optical element according to claim 6, wherein the conductive layer is at least partially on the thicker portion and at least partially on the thinner portion in a direction parallel to the at least one beam path.

10. 10. A charged particle optical element according to any one of claims 1 to 9, wherein the thinner portion of the substrate extends to a peripheral edge of the substrate, preferably the thinner portion extends towards the at least one aperture and / or the at least one electronic component.

11. 11. The charged particle optical element of claim 10, wherein the thinner portion extends to overlap a component surface when the conductive layer is on a different side of the substrate from the at least one electronic component, and / or the component surface is configured to overlap the conductive layer when the conductive layer is on a different side of the substrate from the at least one electronic component.

12. 12. The charged particle optical element according to claim 1, wherein the at least one electronic component comprises one or more detector elements configured to detect signal charged particles, preferably each electronic component being a detector element.

13. A charged particle optical element according to any one of claims 1 to 12, wherein the at least one electronic component is integrated into the substrate or the at least one electronic component is fixed to the substrate, preferably the substrate contains the at least one electronic component.

14. A charged particle optical element according to any one of claims 1 to 13, wherein the electrical connectors are vias.

15. A charged particle optical element according to any one of claims 1 to 14; an electronic circuit electrically connected to the electrical connector, the electronic circuit and the at least one electronic component being positioned on opposite sides of the substrate in a direction parallel to the at least one beam path; 2. A charged particle optical component comprising:

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