Silane precursors and related methods

Abstract

A silane precursor and related methods are provided. The method for preparing the silane precursor can include one or more of the following steps: contacting a dihalogenated silane compound with an amine in a first solvent to obtain a first reaction product; and contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] This disclosure relates to silane precursors for vapor deposition processes and related methods. [Background technology]

[0002]

[0002] Vapor deposition processes use precursors that are evaporated and deposited as a film on a substrate. Summary of the Invention

[0003]

[0003] Some embodiments of the present disclosure relate to precursors. In some embodiments, the precursor has the following formula: TIFF2025534059000002.tif35170

[0004] [In the formula,

[0005] X is F, Cl, Br, or I;

[0006] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0007] A is an amine,

[0008] Q is a bond or -SiR 3 R 4 -

[0009] (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). This includes compounds of the formula:

[0004]

[0010] Some embodiments of the present disclosure relate to precursors. In some embodiments, the precursor has the formula: TIFF2025534059000003.tif35170

[0011] [In the formula,

[0012] R 1 and R 2are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0013] A is an amine,

[0014] Q is a bond or -SiR 3 R 4 -

[0015] (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). This includes compounds of the formula:

[0005]

[0016] Some embodiments of the present disclosure relate to a method for forming a precursor, in some embodiments, the method includes one or more of the following steps: contacting a dihalogenated silane compound with an amine in a first solvent to obtain a first reaction product; and contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

[0006]

[0017] Some embodiments of the present disclosure relate to methods for vapor deposition, in some embodiments, the vapor deposition method includes one or more of the following steps: obtaining a precursor; evaporating the precursor to obtain a vaporized precursor; and contacting the vaporized precursor with a substrate under vapor deposition conditions to form a silicon-containing film on the substrate.

[0007]

[0018] Some embodiments of the present disclosure relate to an article, hi some embodiments, the article includes a substrate and a silicon-containing film on a surface of the substrate.

[0008]

[0019] Certain embodiments of the present disclosure are herein described, by way of example only, with reference to the accompanying drawings. Referring now in detail to the drawings, it is emphasized that the illustrated embodiments are exemplary and are intended for illustrative discussion of embodiments of the present disclosure. In this regard, when described in conjunction with the drawings, it will become apparent to those skilled in the art how embodiments of the present disclosure may be practiced. [Brief explanation of the drawings]

[0009] [Figure 1]

[0020] 1 is a flowchart of a method for preparing a silane precursor, according to some embodiments. [Figure 2]

[0021] 1 is a flowchart of a method for making a silicon-containing film according to some embodiments. [Figure 3]

[0022] 1 is a schematic illustration of a silicon-containing film on a surface of a substrate according to some embodiments. [Figure 4]

[0023] 1 is a 1H NMR spectrum of N-ethyl-N-methyl(1,1,2,2-tetramethyldisilanyl)amine according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0024] Among the benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description taken in conjunction with the accompanying drawings. While detailed embodiments of the present disclosure are disclosed herein, it should be understood that the disclosed embodiments are merely exemplary of the present disclosure, which may be embodied in various forms. Moreover, the examples given of various embodiments of the present disclosure are illustrative rather than limiting.

[0011]

[0025] All prior patents and publications referenced herein are incorporated by reference in their entirety.

[0012]

[0026] Throughout this specification and claims, the following terms have the meanings expressly associated therewith unless the context clearly dictates otherwise. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, although they may. Additionally, as used herein, the phrases "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, although they may. It is intended that all embodiments of the present disclosure may be combined without departing from the scope or spirit of the disclosure.

[0013]

[0027] As used herein, the term "based on" is not exclusive and allows for the use of additional unrecited factors unless the context clearly indicates otherwise. Additionally, throughout this specification, the meanings of "a," "an," and "the" include plural references. The meaning of "in" includes "in" and "on."

[0014]

[0028] As used herein, the term "alkyl" refers to a hydrocarbon chain group having 1 to 30 carbon atoms. The alkyl may be attached via a single bond. An alkyl having n carbon atoms is referred to as "C n For example, "C alkyl" can include n-propyl and isopropyl. For example, alkyl having a range of carbon atoms, such as 1 to 30 carbon atoms, can be represented as C1 to C 30 In some embodiments, alkyl is linear. In some embodiments, alkyl is branched. In some embodiments, alkyl is substituted. In some embodiments, alkyl is unsubstituted. In some embodiments, alkyl is at least one C1-C6 12 Alkyl, C1-C 11 Alkyl, C1-C 10 Alkyl, C1-C9 alkyl 、C1-C8 alkyl, C1-C7 alkyl, C1-C6 alkyl, C1-C5 alkyl, C1-C4 alkyl, C1-C3 alkyl, C2-C 10 Alkyl 、 C3~C 10 Alkyl 、 C4~C 10 Alkyl 、 C5~C 10 Alkyl 、 C6~C 10 Alkyl 、 C7~C 10 Alkyl 、 C8~C 10 Alkyl 、 C2-C9 alkyl 、 C2-C8 alkyl 、 C2-C7 alkyl 、 C2-C6 alkyl 、 C2-C5 alkyl 、 C3-C5 alkyl 、 The alkyl may comprise, consist of, consist essentially of, or be selected from the group consisting of C3-C4 alkyl, or any combination thereof. In some embodiments, the alkyl may comprise, consist of, consist essentially of, or be selected from the group consisting of at least one of methyl, ethyl, n-propyl, 1-methylethyl (isopropyl), n-butyl, isobutyl, sec-butyl, n-pentyl, 1,1-dimethylethyl (t-butyl), n-pentyl, isopentyl, n-hexyl, isohexyl, 3-methylhexyl, 2-methylhexyl, octyl, decyl, dodecyl, octadecyl, or any combination thereof. In some embodiments, the alkyl is substituted with one or more substituents.

[0015]

[0029] The term "alkenyl" as used herein refers to a hydrocarbon chain group having 1 to 10 carbon atoms and at least one carbon-carbon double bond. Examples of alkenyl groups include vinyl, allyl, 1-methylvinyl, 1-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4-pentenyl, 1,3-pentadienyl, 2,4-pentadienyl, 1,4-pentadienyl, 3-methyl-2-butenyl, 1-hexenyl, 1-methyl-2-but ... In some embodiments, the alkenyl is substituted with one or more substituents.

[0016]

[0030] The term "alkynyl," as used herein, refers to a hydrocarbon chain group having 1 to 10 carbon atoms and at least one carbon-carbon triple bond. Examples of alkynyl groups include, but are not limited to, at least one of ethynyl, propynyl, n-butynyl, n-pentynyl, 3-methyl-1-butynyl, n-hexynyl, methylpentynyl, or any combination thereof. In some embodiments, the alkynyl is substituted with one or more substituents.

[0017]

[0031] As used herein, the term "cycloalkyl" refers to a non-aromatic carbocyclic group attached through a single bond and having 3 to 8 carbon atoms in the ring. In some embodiments, cycloalkyl includes C3-C6 cycloalkyl. This term includes monocyclic non-aromatic carbocycles and polycyclic non-aromatic carbocycles. Two or more cycloalkyls may be fused, bridged, or fused and bridged to give, for example, a polycyclic non-aromatic carbocycle. In some embodiments, cycloalkyl may comprise, consist essentially of, or be selected from the group including, at least one of cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or any combination thereof. In some embodiments, cycloalkyl is substituted with one or more substituents.

[0018]

[0032] As used herein, the term "aryl" refers to a monocyclic or polycyclic aromatic hydrocarbon group. The number of carbon atoms in an aryl can range from 5 to 20. For example, in some embodiments, an aryl has 6 to 8 carbon atoms, 6 to 10 carbon atoms, 6 to 12 carbon atoms, 6 to 15 carbon atoms, or 6 to 20 carbon atoms. The term "monocyclic," when used as a modifier, refers to an aryl having a single aromatic ring structure. The term "polycyclic," when used as a modifier, refers to an aryl having one or more aromatic ring structures, which may be fused, bridged, spiro, or otherwise connected ring structures. Examples of aryl include, but are not limited to, phenyl, biphenyl, naphthyl, and the like. In some embodiments, an aryl is substituted with one or more substituents.

[0019]

[0033] Non-limiting examples of aryl groups include benzene, toluene, xylene (e.g., o-xylene, m-xylene, p-xylene), t-butyltoluene (e.g., ot-butyltoluene, mt-butyltoluene, pt-butyltoluene), ethylmethylbenzene (e.g., 1-ethyl-4-methylbenzene, 1-ethyl-3-methylbenzene), 1-isopropyl-4-methylbenzene, 1-t-butyl-4-methylbenzene, mesitylene, pseudocumene, durene, methylbenzene, dimethylbenzene, trimethylbenzene, ethylbenzene, dimethylbenzene, methylbenzene, methylbenzene, di ... Examples of suitable alkyl ethers include, but are not limited to, at least one of ethylbenzene (e.g., 1,4-diethylbenzene), triethylbenzene, propylbenzene, butylbenzene, isobutylbenzene, sec-butylbenzene, t-butylbenzene, hexylbenzene, styrene, naphthalene, anthracene, phenanthrene, biphenyl, terphenyl, methylnaphthalene, biphenylene, dimethylnaphthalene, methylanthracene, 4,4′-dimethylbiphenyl, bibenzyl, diphenylmethane, isomers thereof, or combinations thereof.

[0020]

[0034] As used herein, the term "amine" refers to a group of the formula -N(R a R b R c ) group, R a , R b , and R c each is independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl, or R a , R b , and R c are bonded to form a 3- to 6-membered ring. a , R b , or R c When at least one of is hydrogen, the amine is a group of the formula: —NH(R b R c) In some embodiments, the term "amine" includes amino, as defined herein. In some embodiments, the amine may comprise, consist of, or consist essentially of a primary amine, secondary amine, tertiary amine, or quaternary amine. In some embodiments, the amine may comprise, consist of, or consist essentially of an alkylamine, dialkylamine, or trialkylamine. In some embodiments, the amine may comprise, consist of, or consist essentially of, or be selected from the group consisting of, at least one of methylamine, dimethylamine, ethylamine, diethylamine, isopropylamine, diisopropylamine, butylamine, sec-butylamine, tert-butylamine, disec-butylamine, isobutylamine, diisobutylamine, ditert-pentylamine, ethylmethylamine, isopropyl-n-propylamine, or any combination thereof. Examples of amines include, but are not limited to, one or more of the following:Primary amines, such as methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine, pentylamine, 2-aminopentane, 3-aminopentane, 1-amino-2-methylbutane, 2-amino-2-methylbutane, 3-amino-2-methylbutane, 4-amino-2-methylbutane, hexylamine, 5-amino-2-methylpentane, heptylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, and octadecylamine; secondary amines, such as, but not limited to, dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, di-sec-butylamine, Amines, di-t-butylamine, dipentylamine, dihexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine, methylisobutylamine, methyl-sec-butylamine, methyl-t-butylamine, methylamylamine, methylisoamylamine, ethylpropylamine, ethylisopropylamine, ethylbutylamine, ethylisobutylamine, ethyl-sec-butylamine, ethylamine, ethylisoamylamine, propylbutylamine, and propylisobutylamine; and tertiary amines, such as, but not limited to, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine, and methyldipropylamine.Examples of polyamines include, but are not limited to, one or more of the following: ethylenediamine, propylenediamine, trimethylenediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, 1,2,3-triaminopropane, hydrazine, tris(2-aminoethyl)amine, tetra(aminomethyl)methane, diethylenetriamine, triethylenetetramine, tetraethylpentamine, heptaethyleneoctamine, nonaethylenedecamine, and diazabicycloundecene. In some embodiments, the amine is substituted with one or more substituents.

[0021]

[0035] In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of ethylenediamine, propylenediamine, trimethylenediamine, triethylenediamine, methylpentanediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, 1,2,3-triaminopropane, hydrazine, tetra(aminomethyl)methane, or any combination thereof. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, or any combination thereof. In some embodiments, the polyamine compound is selected from the group comprising, consisting of, consisting essentially of, or comprising at least one of tris(2-aminoethyl)amine, diethylenetriamine, triethylenetetramine, tetraethylenepentamine, heptaethyleneoctamine, nonaethylenedecamine, N',N'-bis(2-aminoethyl)ethane-1,2-diamine, or any combination thereof. In some embodiments, the polyamine compound comprises at least one of 1,2-ethanediamine; 1,2-propanediamine; 1,3-propanediamine; 1,4-butanediamine; 1,6-hexanediamine; 2-methyl-1,5-pentanediamine; 2,2(4),4-trimethylhexanediamine; 2,2,4-trimethyl-1,6-hexanediamine; 2,4,4-trimethyl-1,6-hexanediamine; or any combination thereof.

[0022]

[0036] As used herein, the term "silicon-containing film" refers to a film containing at least one of silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, silicon oxynitride, carbon-doped silicon nitride, carbon-doped silicon oxide, carbon-doped silicon oxynitride, or any combination thereof. For example, the silicon-containing film may include at least one of an SiO film, a SiN film, an SiOC film, a SiCN film, an SiOCN film, or any combination thereof. In some embodiments, the silicon-containing film has a thickness of 20 Å to 2000 Å.

[0023]

[0037] Some embodiments relate to silane precursors and related methods. At least some of these embodiments relate to silane precursors useful in the manufacture of microelectronic devices, including semiconductor devices. For example, the silane precursors can be used to form silicon-containing films by one or more deposition methods. Examples of deposition methods include, but are not limited to, chemical vapor deposition (CVD) processes, digital or pulsed chemical vapor deposition processes, plasma-enhanced cyclic chemical vapor deposition processes (PECCVD), flowable chemical vapor deposition (FCVD), atomic layer deposition (ALD) processes, thermal atomic layer deposition, plasma-enhanced atomic layer deposition (PEALD) processes, metalorganic chemical vapor deposition (MOCVD) processes, plasma-enhanced chemical vapor deposition (PECVD) processes, or any combination thereof.

[0024]

[0038] Silane precursors, such as aminosilane (Si-Si) derivatives, useful for thin film deposition are provided. The silane precursors disclosed herein can exist in a liquid state at room temperature and atmospheric pressure. The silane precursors disclosed herein may exhibit superior volatility and enhanced reactivity compared to conventional precursors. Thus, the silane precursors may exhibit improvements in the ease with which thin films can be formed. In some embodiments, the aminosilane precursors contain Si-N bonds, which exhibit superior surface reactivity, resulting in enhanced surface cohesion. In some embodiments, the presence of multiple Si atoms enhances growth and deposition rates compared to precursors having only a single Si atom. The silane precursors disclosed herein may be useful for forming silicon-containing films, such as, but not limited to, SiO, SiN, SiOC, SiCN, and SiOCN, at low temperatures.

[0025]

[0039] Some embodiments are of the formula: TIFF2025534059000004.tif35170

[0040] [In the formula,

[0041] X is F, Cl, Br, or I;

[0042] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0043] A is an amine,

[0044] Q is a bond or -SiR 3 R 4 -

[0045] (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). The present invention relates to a silane precursor comprising a compound of the formula:

[0026]

[0046] In some embodiments, R 1 and R 2and are the same. In some embodiments, R 1 and R 2 is different.

[0027]

[0047] In some embodiments, R 3 and R 4 and are the same. In some embodiments, R 3 and R 4 is different.

[0028]

[0048] In some embodiments, A is an amine. In some embodiments, A is an amine of the formula: TIFF2025534059000005.tif33170

[0049] [In the formula,

[0050] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0051] R 5 and R 6 are bonded to form a 3- to 6-membered ring] is an amine.

[0029]

[0052] In some embodiments, R 5 and R 6 and are the same. In some embodiments, R 5 and R 6 is different.

[0030]

[0053] Examples of silane precursors include, but are not limited to, compounds having at least one of the following structures: TIFF2025534059000006.tif148170TIFF2025534059000007.tif153170TIFF2025534059000008.tif188170TIFF2025534059000009.tif136170

[0031]

[0054] Some embodiments are of the formula: TIFF2025534059000010.tif35170

[0055] [In the formula,

[0056] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0057] A is an amine,

[0058] Q is a bond or -SiR 3 R 4 -

[0059] [In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl.

[0032]

[0060] In some embodiments, R 1 and R 2 and are the same. In some embodiments, R 1 and R 2 is different.

[0033]

[0061] In some embodiments, R 3 and R 4 and are the same. In some embodiments, R 3 and R 4 is different.

[0034]

[0062] In some embodiments, A is an amine. In some embodiments, A is an amine of the formula: TIFF2025534059000011.tif33170

[0063] [In the formula,

[0064] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0065] R 5 and R 6 are bonded to form a 3- to 6-membered ring] is an amine.

[0035]

[0066] In some embodiments, R 5 and R 6 and are the same. In some embodiments, R 5 and R 6 is different.

[0036]

[0067] In some embodiments, the precursor does not include a halide. For example, in some embodiments, the precursor does not include at least one of F, Cl, Br, or I.

[0037]

[0068] In some embodiments, the precursor is a liquid at a temperature between 20° C. and 30° C. In some embodiments, the precursor is a liquid at atmospheric pressure.

[0038]

[0069] Examples of silane precursors include, but are not limited to, compounds having at least one of the following structures: TIFF2025534059000012.tif147170TIFF2025534059000013.tif153170TIFF2025534059000014.tif188170TIFF2025534059000015.tif138170

[0039]

[0070] 1 is a flow chart of a method for preparing a silane precursor 100 according to some embodiments. As shown in FIG. 1, the method for preparing the silane precursor 100 can include one or more of the following steps: contacting 102 a dihalogenated silane compound with an amine in a first solvent to obtain a first reaction product, and contacting 104 the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

[0040]

[0071] In step 102, in some embodiments, the method 100 includes contacting a dihalogenated silane compound with an amine in a first solvent to obtain a first reaction product.

[0041]

[0072] In some embodiments, the dihalogenated silane compound has the formula: TIFF2025534059000016.tif35170

[0073] [In the formula,

[0074] X 1 and X 2 are each independently F, Cl, Br, or I;

[0075] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0076] Q is a bond or -SiR 3 R 4 -

[0077] (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). The present invention relates to a silane precursor comprising a compound of the formula:

[0042]

[0078] In some embodiments, X 1 and X 2 In some embodiments, X 1 and X 2 is different.

[0043]

[0079] In some embodiments, R 1 and R 2 and are the same. In some embodiments, R 1 and R 2 is different.

[0044]

[0080] In some embodiments, R 3 and R 4 and are the same. In some embodiments, R 3 and R 4 is different.

[0045]

[0081] In some embodiments, the amine is a substituted amine. In some embodiments, the amine has the formula: TIFF2025534059000017.tif33170

[0082] [In the formula,

[0083] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0084] R 5 and R 6 are bonded to form a 3- to 6-membered ring] is a compound of

[0046]

[0085] In some embodiments, R 5 and R 6 and are the same. In some embodiments, R 5 and R 6 is different.

[0047]

[0086] In some embodiments, the first solvent comprises at least one of dichloromethane (CH2Cl2), diethyl ether (Et2O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0048]

[0087] In some embodiments, the first reaction product has the formula: TIFF2025534059000018.tif35170

[0088] [In the formula,

[0089] X is F, Cl, Br, or I;

[0090] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0091] A is an amine,

[0092] Q is a bond or -SiR 3 R 4 -

[0093] (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). This includes compounds of the formula:

[0049]

[0094] In some embodiments, R 1 and R 2 and are the same. In some embodiments, R 1 and R 2 is different.

[0050]

[0095] In some embodiments, R 3 and R 4 and are the same. In some embodiments, R 3 and R 4 is different.

[0051]

[0096] In some embodiments, A is an amine. In some embodiments, A is an amine of the formula: TIFF2025534059000019.tif33170

[0097] [In the formula,

[0098] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0099] R 5 and R 6 are bonded to form a 3- to 6-membered ring] is an amine.

[0052]

[0100] In some embodiments, R 5 and R 6 and are the same. In some embodiments, R 5 and R 6 is different.

[0053]

[0101] In step 104, in some embodiments, method 100 includes contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product.

[0054]

[0102] In some embodiments, the reducing agent comprises at least one of LiAlH4, NaAlH4, LiH, DiBAL, LiBH4, NaBH4, or any combination thereof.

[0055]

[0103] In some embodiments, the second solvent comprises at least one of dichloromethane (CH2Cl2), diethyl ether (Et2O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0056]

[0104] In some embodiments, the second reaction product has the formula: TIFF2025534059000020.tif35170

[0105] [In the formula,

[0106] R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0107] A is an amine,

[0108] Q is a bond or -SiR 3 R 4 -

[0109] [In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl.

[0057]

[0110] In some embodiments, R 1 and R 2 and are the same. In some embodiments, R 1 and R 2 is different.

[0058]

[0111] In some embodiments, R 3 and R 4 and are the same. In some embodiments, R 3 and R 4 is different.

[0059]

[0112] In some embodiments, A is an amine. In some embodiments, A is an amine of the formula: TIFF2025534059000021.tif33170

[0113] [In the formula,

[0114] R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl;

[0115] R 5 and R 6 are bonded to form a 3- to 6-membered ring] is an amine.

[0060]

[0116] In some embodiments, R 5 and R 6 and are the same. In some embodiments, R 5 and R 6 is different.

[0061]

[0117] In some embodiments, the method for preparing the silane precursor 100 proceeds according to the following reaction scheme: TIFF2025534059000022.tif58170

[0062]

[0118] In some embodiments, the method for preparing the silane precursor 100 proceeds according to the following reaction scheme: TIFF2025534059000023.tif54170

[0063]

[0119] In some embodiments, a method for preparing an oxygen-containing disalne precursor 100 proceeds according to the following reaction scheme, where R1 can be methyl, ethyl, or any alkyl group. TIFF2025534059000024.tif15170

[0064]

[0120] 2 is a flowchart of a method for making a silicon-containing film 200 according to some embodiments. As shown in FIG. 2, the method 200 for making a silicon-containing film may include, consist of, or consist essentially of one or more of steps 202: obtaining a precursor; 204: obtaining at least one co-reactant precursor; 206: evaporating the precursor to obtain a vaporized precursor; 208: evaporating the at least one co-reactant precursor to obtain a vaporized co-reactant precursor; and 210: contacting at least one of the vaporized precursor, the at least one vaporized co-reactant precursor, or any combination thereof, with a substrate under deposition conditions to form a silicon-containing film on the substrate.

[0065]

[0121] Step 202 may include, consist of, or consist essentially of obtaining a precursor. The precursor may include, consist of, or consist essentially of any one or more of the precursors disclosed herein. Obtaining may include obtaining a vessel or other container containing the precursor. In some embodiments, the precursor may be obtained in a container or other vessel from which the precursor is vaporized.

[0066]

[0122] Step 204 may include, consist of, or consist essentially of obtaining at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor comprises, consists of, consists essentially of, or is selected from the group comprising at least one of an oxidizing gas, a reducing gas, a hydrocarbon, or any combination thereof. The at least one co-reactant precursor may be selected to obtain a desired silicon-containing film. In some embodiments, the at least one co-reactant precursor may comprise, consist of, or consist essentially of at least one of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazoline, pyridine, ethylenediamine, radicals thereof, or any combination thereof. In some embodiments, the at least one co-reactant precursor may comprise, consist of, or consist essentially of at least one of H, O, O, HO, HO, NO, NO, NO, CO, CO, a carboxylic acid, an alcohol, a diol, a radical thereof, or any combination thereof. In some embodiments, the at least one co-reactant precursor comprises, consists of, or consists essentially of at least one of methane, ethane, ethylene, acetylene, or any combination thereof. Obtaining may include obtaining a container or other vessel containing the at least one co-reactant precursor. In some embodiments, the at least one co-reactant precursor may be obtained in a container or other vessel from which the at least one co-reactant precursor is evaporated. In some embodiments, the method further includes an inert gas, such as, for example, at least one of argon, helium, nitrogen, or any combination thereof.

[0067]

[0123] Step 206 may include, consist of, or consist essentially of evaporating the precursor to obtain a vaporized precursor. Vaporizing may include, consist of, or consist essentially of heating the precursor sufficiently to obtain a vaporized precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating a container containing the precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating the precursor in a deposition chamber in which the vapor deposition process is performed. In some embodiments, evaporating may include, consist of, or consist essentially of heating a conduit for supplying the precursor, the vaporized precursor, or any combination thereof, for example, to a deposition chamber. In some embodiments, evaporating may include, consist of, or consist essentially of operating a vapor delivery system containing the precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating the precursor to a temperature sufficient to vaporize it to obtain a vaporized precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating to a temperature below the decomposition temperature of at least one of the precursor, the evaporated precursor, or any combination thereof. In some embodiments, the precursor may be in a gas phase, in which case step 206 is optional and not required. For example, the precursor may include, consist of, or consist essentially of the evaporated precursor.

[0068]

[0124] Step 208 may include, consist of, or consist essentially of evaporating at least one co-reactant precursor to obtain at least one vaporized co-reactant precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating the at least one co-reactant precursor to a degree sufficient to obtain at least one vaporized co-reactant precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating a container containing the at least one co-reactant precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating the at least one co-reactant precursor in a deposition chamber in which the vapor deposition process is performed. In some embodiments, evaporating may include, consist of, or consist essentially of heating a conduit for supplying the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof, for example, to the deposition chamber. In some embodiments, evaporating may include, consist of, or consist essentially of operating a vapor delivery system containing at least one co-reactant precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating to a temperature sufficient to vaporize at least one co-reactant precursor to obtain at least one vaporized co-reactant precursor. In some embodiments, evaporating may include, consist of, or consist essentially of heating to a temperature below the decomposition temperature of at least one of the at least one co-reactant precursor, the at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, at least one co-reactant precursor may be in the vapor phase, in which case step 108 is optional and not required. For example, at least one co-reactant precursor may include, consist of, or consist essentially of at least one vaporized co-reactant precursor.

[0069]

[0125] Step 210 may comprise, consist of, or consist essentially of contacting at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof, with the substrate under deposition conditions sufficient to form a silicon-containing film on the surface of the substrate. The contacting may occur in any system, apparatus, device, assembly, chamber, or component thereof suitable for vapor deposition processes, including, for example, but not limited to, a deposition chamber. The vaporized precursor and at least one co-reactant precursor may be contacted with the substrate simultaneously or at different times. For example, each of the vaporized precursor, at least one vaporized co-reactant precursor, and the substrate may be present in the deposition chamber at the same time. That is, in some embodiments, the contacting may include contemporaneous or simultaneous contacting of the vaporized precursor and at least one vaporized co-reactant precursor with the substrate. Alternatively, each of the vaporized precursor and at least one vaporized co-reactant precursor may be present in the deposition chamber at different times. That is, in some embodiments, the contacting may involve alternately and / or sequentially contacting the vaporized precursor with the substrate, followed by contacting at least one vaporized co-reactant precursor with the substrate, in one or more cycles.

[0070]

[0126] The deposition conditions may include conditions of a deposition process. Examples of deposition conditions include, but are not limited to, deposition conditions of a deposition process including at least one of a chemical vapor deposition (CVD) process, a digital or pulsed chemical vapor deposition process, a plasma-enhanced cyclic chemical vapor deposition process (PECCVD), a flowable chemical vapor deposition process (FCVD), an atomic layer deposition (ALD) process, a thermal atomic layer deposition, a plasma-enhanced atomic layer deposition (PEALD) process, a metal-organic chemical vapor deposition (MOCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, or any combination thereof.

[0071]

[0127] The deposition conditions may include, consist of, or consist essentially of a deposition temperature. The deposition temperature may be a temperature below the thermal decomposition temperature of at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. The deposition temperature may be sufficiently high to reduce or avoid condensation of at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, the substrate is contacted with the vaporized precursor in a chamber or other container in which the at least one vaporized co-reactant precursor is heated to the deposition temperature. In some embodiments, at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof may be heated to the deposition temperature.

[0072]

[0128] The deposition temperature may be between 200° C. and 2500° C. In some embodiments, the deposition temperature may be between 500° C. and 700° C. For example, in some embodiments, the deposition temperature may be between 500° C. and 680° C., between 500° C. and 660° C., between 500° C. and 640° C., between 500° C. and 620° C., between 500° C. and 600° C., between 500° C. and 580° C., between 500° C. and 560° C., between 500° C. and 540° C., between 500° C. and 520° C., between 520° C. and 700° C., between 540° C. and 700° C., between 560° C. and 700° C., between 580° C. and 700° C., between 600° C. and 700° C., between 620° C. and 700° C., between 640° C. and 700° C., between 660° C. and 700° C., or between 680° C. and 700° C. In other embodiments, the deposition temperature may be greater than 200°C to 2500°C, such as, but not limited to, 400°C to 2000°C, 500°C to 2000°C, 550°C to 2400°C, 600°C to 2400°C, 625°C to 2400°C, 650°C to 2400°C, 675°C to 2400°C, 700°C to 2400°C, 725°C to 2400°C, 750°C to 2400°C, 0℃, 775℃~2400℃, 800℃~2400℃, 825℃~2400℃, 850℃~2400℃, 875℃~2400℃, 900℃~2400℃, 925℃~2400℃, 950℃~2400℃, 975℃~2400℃, 1000℃~2400℃, 1025℃~2400℃, 1050℃~2400℃, 1075℃~2400℃, 1100℃~ 2400℃, 1200℃~2400℃, 1300℃~2400℃, 1400℃~2400℃, 1500℃~2400℃, 1600℃~2400℃, 1700℃~2400℃, 1800℃~2400℃, 1900℃~2400℃, 2000℃~2400℃, 2100℃~2400℃, 2200℃~2400℃, 2300℃~2400℃, 500℃~2 The temperature may be 500°C to 1900°C, 500°C to 1800°C, 500°C to 1700°C, 500°C to 1600°C, 500°C to 1500°C, 500°C to 1400°C, 500°C to 1300°C, 500°C to 1200°C, 500°C to 1100°C, 500°C to 1000°C, 500°C to 1000°C, 500°C to 900°C, or 500°C to 800°C.

[0073]

[0129] The deposition conditions can include, consist of, or consist essentially of the deposition pressure. In some embodiments, the deposition pressure can include, consist of, or consist essentially of the vapor pressure of at least one of the vaporized precursor, at least one vaporized co-reactant precursor, or any combination thereof. In some embodiments, the deposition pressure can include, consist of, or consist essentially of the chamber pressure.

[0074]

[0130] The deposition pressure may be a pressure between 0.001 Torr and 100 Torr. For example, in some embodiments, the deposition pressure may be a pressure between 1 Torr and 30 Torr, 1 Torr and 25 Torr, 1 Torr and 20 Torr, 1 Torr and 15 Torr, 1 Torr and 10 Torr, 5 Torr and 50 Torr, 5 Torr and 40 Torr, 5 Torr and 30 Torr, 5 Torr and 20 Torr, or 5 Torr and 15 Torr. In other embodiments, the deposition pressure is between 1 Torr and 100 Torr, between 5 Torr and 100 Torr, between 10 Torr and 100 Torr, between 15 Torr and 100 Torr, between 20 Torr and 100 Torr, between 25 Torr and 100 Torr, between 30 Torr and 100 Torr, between 35 Torr and 100 Torr, between 40 Torr and 100 Torr, between 45 Torr and 100 Torr, between 50 Torr and 100 Torr, between 55 Torr and 100 Torr, between 60 Torr and 100 Torr, The pressure may be 0 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to 100 Torr, 85 Torr to 100 Torr, 90 Torr to 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr. In other further embodiments, the deposition pressure may be a pressure between 1 mTorr and 100 mTorr, between 1 mTorr and 90 mTorr, between 1 mTorr and 80 mTorr, between 1 mTorr and 70 mTorr, between 1 mTorr and 60 mTorr, between 1 mTorr and 50 mTorr, between 1 mTorr and 40 mTorr, between 1 mTorr and 30 mTorr, between 1 mTorr and 20 mTorr, between 1 mTorr and 10 mTorr, between 100 mTorr and 300 mTorr, between 150 mTorr and 300 mTorr, between 200 mTorr and 300 mTorr, or between 150 mTorr and 250 mTorr, or between 150 mTorr and 225 mTorr.

[0075]

[0131] The substrate may comprise, consist of, or consist essentially of at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO2, W, SiN, WCN, Al2O3, AlN, ZrO2, La2O3, TaN, RuO2, IrO2, Nb2O3, YO3, hafnium oxide, or a combination thereof. In some embodiments, the silicon-containing film may comprise, consist of, or consist essentially of at least one of silicon, silicon nitride, silicon oxynitride, silicon oxide, silicon dioxide, silicon carbide, silicon carbonitride, silicon oxycarbonitride, carbon-doped silicon nitride, carbon-doped silicon oxide, carbon-doped silicon oxynitride, or any combination thereof. In some embodiments, the substrate may comprise other silicon-based substrates, such as, for example, one or more of a polysilicon substrate, a metal substrate, and a dielectric substrate.

[0076]

[0132] 3 is a schematic illustration of a silicon-containing film 304 on a surface of a substrate 302, according to some embodiments. In some embodiments, the silicon-containing film 304 comprises any film formed according to the methods disclosed herein. In some embodiments, the silicon-containing film 304 comprises any film prepared from the precursors disclosed herein.

[0077] Example 1 TIFF2025534059000025.tif27170

[0078]

[0133] To a flame-dried vessel containing n-hexane (1.2 L), 1,2-dichloro-1,1,2,2-tetramethyldisilane (DCTMDS, 70 g, 0.374 mol) was added. Subsequently, N-ethyl-N-methylamine (EMA, 46.4 g, 0.785 mol) was added dropwise over 1 h (maintaining the internal temperature below 30 °C). The reaction mixture was stirred at room temperature under a N2 atmosphere for 20 h. After completion of the reaction, the resulting white precipitate was filtered through a Celite pad along with n-hexane. The filtrate was concentrated at 50 °C and 150 torr.

[0079]

[0134] The residue (N-ethyl-N-methyl(2-chloro-1,1,2,2-tetramethyldisilanyl)amine) was dissolved in EtO (0.8 L). To the mixture was added a 1 M solution of LAH in ether (195 mL, 0.195 mol) at 0 °C. The reaction was stirred at room temperature for 20 h. The reaction mixture was filtered through a Celite pad, and the filtrate was concentrated at 40 °C and 200 torr. The final product (N-ethyl-N-methyl(1,1,2,2-tetramethyldisilanyl)amine) was purified by fractional distillation (41 °C, 3 torr) to give a colorless liquid (30 g, 45.7% yield).

[0080]

[0135] N-ethyl-N-methyl(1,1,2,2-tetramethyldisilanyl)amine. 1 H NMR (CDCl3, Hollyhock-1): δ 3.63 - 3.67 (m, 1H), δ 2.78 (q, J = 0.01 Hz, 2H), 2.46 (s, 3H), δ 1.01 (t, J = 0.01 Hz, 3H), 0.15 (s, 6H), 0.13 (d, J = 0.009 Hz, 6H) ppm.

[0081]

[0136] N-ethyl-N-methyl(2-chloro-1,1,2,2-tetramethyldisilanyl)amine. 1 H NMR (CDCl3, compound-2): δ 2.78 (q, J = 0.014 Hz, 2H), 2.48 (s, 3H), δ 1.01 (t, J = 0.014 Hz, 3H), 0.47 (s, 6H), 0.23 (s, 6H) ppm.

[0082]

[0137] In addition to Example 1, Example 2 is shown below, in which the final product (N-ethyl-N-methyl(1,1,2,2-tetramethyldisilanyl)amine) is used to make a new final product, 1-methoxy-1,1,2,2-tetramethyldisilane, according to the following synthetic method.

[0083] Example 2 TIFF2025534059000026.tif26170

[0084]

[0139] where A is an amine and R1 is methyl, ethyl, or any alkyl group. Example 2 demonstrates the addition of MeOH (methanol) (9.68 g, 0.30 mol) to N-ethyl-N-methyl(1,1,2,2-tetramethyldisilanyl)amine (26.5 g, 0.15 mol) in DCM (dichloromethane) at 30 °C. Immediately after addition, a slight exotherm occurred in the reactor, and condensation occurred on the inner surface of the flask, but no salting out occurred. After stirring overnight at room temperature, the reaction conversion was determined by GC-FID analysis of the reaction mixture. The GC-FID distribution was approximately 97% single peak with less than 3% impurities. Volatiles were removed using a distillation system at 500 torr and an internal temperature of 60 °C. The crude product was distilled at 40-50 torr and 40-43 °C, yielding 9.2 g of the target product in 41% yield. The desired product was confirmed by 1 H NMR spectroscopy.

[0085]

[0140] In some embodiments, the impurity content of the final product is less than 3%, and in other embodiments, it may be less than 2%, less than 1%, or even less depending on the distillation used for such disilane precursor.

[0086]

[0141]

[0142] FIG. 4 illustrates the reaction of N-ethyl-N-methyl(1,1,2,2-tetramethyldisilanyl)amine, according to some embodiments. 1 1 H NMR spectrum.

[0087]

[0143] Aspects

[0144] Various embodiments are described below. It should be understood that any one or more of the features described in the following embodiments can be combined with any one or more of the other embodiments.

[0088]

[0145] Aspect 1 The following formula, TIFF2025534059000027.tif35170[In the formula, X is F, Cl, Br, or I; R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine, Q is a bond or -SiR 3 R 4 - (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). Precursors, including compounds of the formula:

[0089]

[0146] Aspect 2 The precursor according to embodiment 1, wherein the alkyl is a C1-C4 alkyl.

[0090]

[0147] Aspect 3 A precursor according to aspect 1 or 2, wherein the alkyl is a C1 to C4 linear alkyl.

[0091]

[0148] Aspect 4 A precursor according to any one of aspects 1 to 3, wherein the alkyl is a C3-C4 branched alkyl.

[0092]

[0149] Aspect 5 The precursor according to any one of aspects 1 to 4, wherein the cycloalkyl is a C3 to C6 cycloalkyl.

[0093]

[0150] Aspect 6 Aspect 6. The precursor of any one of aspects 1 to 5, wherein the amine is a secondary amine.

[0094]

[0151] Aspect 7 A, TIFF2025534059000028.tif33170[In the formula, R 5 and R 6are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R 5 and R 6 are bonded to form a 3- to 6-membered ring] The method according to any one of aspects 1 to 6, wherein

[0095]

[0152] Aspect 8 The following formula, TIFF2025534059000029.tif35170[In the formula, R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine, Q is a bond or -SiR 3 R 4 - (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). Precursors containing compounds of the formula:

[0096]

[0153] Aspect 9 The precursor according to embodiment 8, wherein the alkyl is a C1-C4 alkyl.

[0097]

[0154] Aspect 10 A precursor according to aspect 8 or 9, wherein the alkyl is a C1 to C4 linear alkyl.

[0098]

[0155] Aspect 11 A precursor according to any one of aspects 8 to 10, wherein the alkyl is a C3-C4 alkyl.

[0099]

[0156] Aspect 12 A precursor according to any one of aspects 8 to 11, wherein the cycloalkyl is a C3 to C6 cycloalkyl.

[0100]

[0157] Aspect 13 Aspect 13. The precursor of any one of aspects 8 to 12, wherein the amine is a secondary amine.

[0101]

[0158] Aspect 14 A, TIFF2025534059000030.tif33170[In the formula, R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R 5 and R 6 are bonded to form a 3- to 6-membered ring] 14. The method according to any one of aspects 8 to 13, wherein

[0102]

[0159] Aspect 15 15. The precursor of any one of aspects 8 to 14, wherein the precursor is halide-free.

[0103]

[0160] Aspects 16. The precursor of any one of embodiments 8 to 15, which is liquid at 20° C. to 30° C. and atmospheric pressure.

[0104]

[0161] Aspect 17 1. A method for forming a precursor, comprising: contacting a dihalogenated silane compound with an amine in a first solvent to obtain a first reaction product; contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product; A method comprising:

[0105]

[0162] Aspect 18 The dihalogenated silane compound is represented by the following formula: TIFF2025534059000031.tif35170[in the formula, X 1 and X 2 are each independently F, Cl, Br, or I; R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; Q is a bond or -SiR 3 R 4 - (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). 20. The method of embodiment 17, comprising the compound of formula (I).

[0106]

[0163] Aspect 19 The amine has the formula: TIFF2025534059000032.tif33170[In the formula, R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R 5 and R 6 are bonded to form a 3- to 6-membered ring] 19. The method of embodiment 17 or 18, comprising the compound of

[0107]

[0164] Aspect 20 Aspect 20. The method of any one of aspects 17-19, wherein the first solvent comprises at least one of dichloromethane (CH2Cl2), diethyl ether (Et2O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0108]

[0165] Aspect 21 The first reaction product has the formula: TIFF2025534059000033.tif35170[In the formula, X is F, Cl, Br, or I; R 1 and R 2are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine, Q is a bond or -SiR 3 R 4 - (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). 21. The method of any one of aspects 17 to 20, comprising the compound of

[0109]

[0166] Aspect 22 A, TIFF2025534059000034.tif33170[In the formula, R 5 and R 6 are each independently hydrogen, alkyl, cycloalkyl, aryl, or benzyl, or R 5 and R 6 are bonded to form a 3- to 6-membered ring] 22. The method of embodiment 21, wherein

[0110]

[0167] Aspect 23 23. The method of any one of aspects 17-22, wherein the reducing agent comprises at least one of LiAlH4, NaAlH4, LiH, DiBAL, LiBH4, NaBH4, or any combination thereof.

[0111]

[0168] Aspect 24 Aspect 24. The method of any one of aspects 17-23, wherein the second solvent comprises at least one of dichloromethane (CH2Cl2), diethyl ether (Et2O), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

[0112]

[0169] Aspect 25 The second reaction product has the formula: TIFF2025534059000035.tif35170[In the formula, R 1 and R 2 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine, Q is a bond or -SiR 3 R 4 - (In the formula, R 3 and R 4 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl). 25. The method of any one of embodiments 17 to 24, comprising the compound of formula (I).

[0113]

[0170] Aspect 26 A is the following formula TIFF2025534059000036.tif33170[in the formula, R 5 and R 6 are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R 5 and R 6 are bonded to form a 3- to 6-membered ring] 26. The method of any one of aspects 17 to 25, wherein the amine is

[0114]

[0171] Aspect 27 1. A vapor deposition method comprising: Obtaining a precursor according to any one of aspects 1 to 16; evaporating the precursor to obtain a vaporized precursor; contacting the vaporized precursor with a substrate under deposition conditions to form a silicon-containing film on the substrate; A method comprising:

[0115]

[0172] Aspect 28 28. The method of embodiment 27, wherein the deposition conditions comprise atomic layer deposition conditions.

[0116]

[0173] Aspect 29 29. The method of any one of embodiments 27-28, wherein the deposition conditions comprise chemical vapor deposition conditions.

[0117]

[0174] Aspects 30. The method of any one of embodiments 27-29, wherein the silicon-containing film comprises at least one of SiO, SiN, SiOC, SiCN, SiOCN, or any combination thereof.

[0118]

[0175] It will be understood that changes may be made in details, particularly in matters of materials of construction employed and shape, size and arrangement of parts without departing from the scope of the present disclosure. The specification and described embodiments are examples, with the true scope and spirit of the present disclosure being indicated by the following claims.

Claims

1. The following formula, [In the formula, X is F, Cl, Br, or I; R １ and R ２ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine; Q is a bond or -SiR ３ R ４ - (In the formula, R ３ and R ４ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl. Precursors containing compounds of the formula:

2. The alkyl is C １ ~C ４ The precursor of claim 1 , which is an alkyl.

3. The alkyl is C １ ~C ４ The precursor of claim 1 which is a linear alkyl.

4. The alkyl is C ３ ~C ４ The precursor of claim 1 which is a branched alkyl.

5. Cycloalkyl is C ３ ~C ６ The precursor of claim 1 which is a cycloalkyl.

6. The precursor of claim 1 , wherein the amine is a secondary amine.

7. A is, [In the formula, R ５ and R ６ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R ５ and R ６ are bonded to form a 3- to 6-membered ring.

2. The precursor of claim 1, wherein:

8. The following formula, [In the formula, R １ and R ２ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine; Q is a bond or -SiR ３ R ４ - (In the formula, R ３ and R ４ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl. Precursors containing compounds of the formula:

9. The alkyl is C １ ~C ４ The precursor of claim 8, which is an alkyl.

10. The alkyl is C １ ~C ４ The precursor of claim 8 which is a linear alkyl.

11. The alkyl is C ３ ~C ４ The precursor of claim 8 which is a branched alkyl.

12. Cycloalkyl is C ３ ~C ６ The precursor of claim 8 which is a cycloalkyl.

13. 9. The precursor of claim 8, wherein the amine is a secondary amine.

14. A is, [In the formula, R ５ and R ６ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R ５ and R ６ are bonded to form a 3- to 6-membered ring.

9. The precursor of claim 8, wherein:

15. The precursor of claim 8 , wherein the precursor is halide-free.

16. 9. The precursor of claim 8, wherein the precursor is liquid at 20°C to 30°C and atmospheric pressure.

17. 1. A method for forming a precursor, comprising: contacting a dihalogenated silane compound with an amine in a first solvent to obtain a first reaction product; contacting the first reaction product with a reducing agent in a second solvent to obtain a second reaction product; A method comprising:

18. The dihalogenated silane compound is represented by the following formula: [In the formula, X １ and X ２ are each independently F, Cl, Br, or I; R １ and R ２ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; Q is a bond or -SiR ３ R ４ - (In the formula, R ３ and R ４ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl.

18. The method of claim 17, comprising the compound of formula:

19. The amine has the formula: [In the formula, R ５ and R ６ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R ５ and R ６ are bonded to form a 3- to 6-membered ring.

18. The method of claim 17, comprising the compound of formula:

20. The first solvent is dichloromethane (CH ２ Cl ２ ), diethyl ether (Et ２ 18. The method of claim 17, wherein the solvent comprises at least one of hexane, ethyl acetate (EtOAc), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

21. The first reaction product has the formula: [In the formula, X is F, Cl, Br, or I; R １ and R ２ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine; Q is a bond or -SiR ３ R ４ - (In the formula, R ３ and R ４ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl.

18. The method of claim 17, comprising the compound of formula:

22. A is, [In the formula, R ５ and R ６ are each independently hydrogen, alkyl, cycloalkyl, aryl, or benzyl, or R ５ and R ６ are bonded to form a 3- to 6-membered ring.

22. The method of claim 21, wherein:

23. The reducing agent is LiAlH ４ , NaAlH ４ , LiH, DiBAL, LiBH ４ , NaBH ４ 18. The method of claim 17, comprising at least one of:

24. The second solvent is dichloromethane (CH ２ Cl ２ ), diethyl ether (Et ２ 18. The method of claim 17, wherein the solvent comprises at least one of hexane, ethyl acetate (EtOAc), n-hexane, ethyl acetate (EtOAc), tetrahydrofuran (THF), or any combination thereof.

25. The second reaction product has the formula: [In the formula, R １ and R ２ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; A is an amine; Q is a bond or -SiR ３ R ４ - (In the formula, R ３ and R ４ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl.

18. The method of claim 17, comprising the compound of formula:

26. A is represented by the following formula: [In the formula, R ５ and R ６ are each independently hydrogen, alkyl, alkenyl, alkynyl, cycloalkyl, aryl, or benzyl; R ５ and R ６ are bonded to form a 3- to 6-membered ring.

18. The method of claim 17, wherein the amine is

27. 1. A vapor deposition method comprising: Obtaining a precursor according to any one of claims 1 to 16; evaporating the precursor to obtain a vaporized precursor; contacting the vaporized precursor with a substrate under deposition conditions to form a silicon-containing film on the substrate; A method comprising:

28. 28. The method of claim 27, wherein the deposition conditions comprise atomic layer deposition conditions.

29. 28. The method of claim 27, wherein the deposition conditions comprise chemical vapor deposition conditions.

30. 28. The method of claim 27, wherein the silicon-containing film comprises at least one of SiO, SiN, SiOC, SiCN, SiOCN, or any combination thereof.

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