Substrate Processing Equipment

Abstract

A substrate processing apparatus according to one embodiment of the present invention includes a chamber having a sidewall, a susceptor for mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a dielectric material, a lower dome covering a lower surface of the chamber and formed of a dielectric material, a liner disposed inside the chamber and between the upper dome and the lower dome, and an antenna disposed on the upper dome for forming inductively coupled plasma, wherein a ratio of a diameter of the antenna to a diameter of the substrate is 80% to 120%.

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a plasma enhanced chemical vapor deposition apparatus that uses lamp heaters to rapidly heat a substrate at high temperatures and deposit a high dielectric thin film. [Background technology]

[0002] In semiconductor manufacturing, a silicon single crystal thin film with the same crystalline structure as the silicon single crystal substrate is deposited on the silicon single crystal substrate. During the growth of the silicon single crystal thin film, an inorganic insulating material such as silicon oxide is deposited and patterned to form a single crystal region only on the exposed silicon portion of the substrate surface. This is called selective epitaxial growth (SEG).

[0003] In addition, thin-film solar cells fabricated on a large-area substrate are based on a P layer that receives sunlight, an I layer that forms electron-hole pairs, and an N layer that acts as an opposing electrode for the P layer. Similarly, liquid crystal displays are based on array elements and color filter elements formed on array and color filter substrates, respectively.

[0004] The fabrication of thin film elements for solar cells and liquid crystal displays requires multiple photolithography processes, including thin film deposition, photosensitive layer coating, exposure and development, and etching, as well as various other processes such as cleaning, bonding, and cutting.

[0005] In the plasma enhanced chemical vapor deposition (PECVD) method, a thin film is formed by applying a high RF (Radio Frequency) voltage to an antenna or an electrode to excite a reactive gas into a plasma state inside a chamber.

[0006] Recently, in order to prevent foreign particles and by-products generated during the deposition process using plasma chemical vapor deposition from adhering to the inner walls of the chamber, the inner walls are designed with quartz, and upper and lower domes are designed at the top and bottom of the chamber.

[0007] The deposition process using plasma enhanced chemical vapor deposition (PECVD) maintains the pressure inside the chamber at several mTorr, and maintains an ultra-high vacuum of 10E-9 Torr at the base vacuum level, thereby minimizing the number of foreign particles and by-products generated during the deposition process and shortening the deposition process time, which has the advantage of improving production yield.

[0008] Such plasma enhanced chemical vapor deposition processes depend on the temperature distribution of the substrate and the characteristics of the plasma. DISCLOSURE OF THE INVENTION [Problem to be solved by the invention]

[0009] The technical problem to be solved by the present invention is to provide a plasma-enhanced chemical vapor deposition apparatus having an upper dome and a lower dome, in which the size of an antenna for forming plasma is adjusted according to the ratio to the diameter of a substrate, thereby adjusting the deposition profile of a high-dielectric thin film according to the size (ratio) of the antenna.

[0010] The technical problem to be solved by the present invention is to provide a method for preventing process gas injected into an upper space between the upper dome and the susceptor from flowing into a lower space below the susceptor by using the structure of a liner disposed between the upper dome and the lower dome and the shape of the susceptor. [Means for solving the problem]

[0011] A substrate processing apparatus according to one embodiment of the present invention includes a chamber having a sidewall, a susceptor for mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a dielectric material, a lower dome covering a lower surface of the chamber and formed of a dielectric material, a liner disposed inside the chamber and between the upper dome and the lower dome, and an antenna disposed on the upper dome for forming inductively coupled plasma, wherein a ratio of a diameter of the antenna to a diameter of the substrate is 80% to 120%.

[0012] In one embodiment of the present invention, the antenna includes two one-turn unit antennas, which are arranged so as to overlap each other on the upper and lower surfaces, and which are connected in parallel to an RF power source, with the width direction of the one-turn unit antennas standing vertically.

[0013] In one embodiment of the present invention, the one-turn antenna has a stripline shape having a width greater than its thickness, the width direction of the one-turn unit antenna is vertical, and the ratio W / t of the width W to the thickness t is 10 or more.

[0014] In one embodiment of the present invention, one end of each of the pair of one-turn antennas is connected to a pair of vertical power supply lines extending vertically, and the pair of vertical power supply lines are connected to each other by a horizontal power supply line and then connected to an RF power source.

[0015] In one embodiment of the present invention, the one-turn antenna assembly further includes a clamp in contact with an upper surface of the chamber and arranged to cover an edge of the upper dome; an electromagnetic wave shielding part arranged on the clamp and surrounding the antenna; and a ground fixing part fixing the other end of each of the pair of one-turn antennas to the electromagnetic wave shielding part, wherein the ground fixing part extends radially from the upper surface of the one-turn antenna, then extends to the lower surface, and then extends radially again from the lower surface.

[0016] In one embodiment of the present invention, the antenna further includes an insulating fixing part extending parallel to the ground fixing part and coupled to a lower surface of the one-turn antenna to fix it to the electromagnetic wave shielding part. [Effects of the Invention]

[0017] According to one embodiment of the present invention, a substrate processing apparatus is provided for controlling the deposition profile according to the antenna size by adjusting the size of the plasma-generating antenna in accordance with the substrate diameter ratio in a plasma-enhanced chemical vapor deposition apparatus having an upper dome and a lower dome. According to the present invention, a HfZrO thin film (HZO thin film) with a uniformity of 3.1% was achieved using an antenna (356 mm diameter) larger than the diameter of a 300 mm substrate. [Brief explanation of the drawings]

[0018] [Figure 1] 1 is a conceptual diagram illustrating a home position in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention; [Figure 2] FIG. 2 is a conceptual diagram illustrating the ascending position in the plasma enhanced chemical vapor deposition apparatus of FIG. 1. [Figure 3] FIG. 2 is a conceptual diagram illustrating the plasma enhanced chemical vapor deposition apparatus of FIG. 1, cut in another direction. [Figure 4] FIG. 2 is a perspective view illustrating an antenna of the plasma enhanced chemical vapor deposition apparatus of FIG. 1. [Figure 5] FIG. 5 is a plan view illustrating the antenna of FIG. 4 as viewed from the upper dome direction. [Figure 6] FIG. 10 is a plan view illustrating an antenna according to another embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

[0019] To deposit a high-k dielectric thin film, the substrate needs to be heated to approximately 300 degrees Celsius. Furthermore, to ensure plasma uniformity or deposition uniformity of the high-k dielectric thin film, attempts have been made to ensure process uniformity by adjusting the chamber size to match the size of a fixed antenna. However, adjusting the chamber size is not suitable for atomic layer deposition processes that minimize process volume, and adjusting the chamber size is time- and cost-intensive.

[0020] According to the present invention, process uniformity can be easily ensured by adjusting the antenna size while keeping the chamber volume fixed. In particular, when the antenna diameter is about 120% of the substrate size, the high dielectric thin film uniformity of 3.1% was achieved.

[0021] According to the present invention, a chemical vapor deposition apparatus having an upper dome and a lower dome uses a liner to prevent unwanted deposition of thin films on the inner walls of the chamber, and the liner is periodically replaced or cleaned.

[0022] In a chemical vapor deposition apparatus having an upper dome and a lower dome according to an embodiment of the present invention, a process gas is injected into an upper space defined by the upper dome and the susceptor, and the process gas is exhausted through an opening in a liner connected to the upper space. When the process gas supplied to the upper space flows into the lower space defined by the lower dome and the susceptor, an abnormal thin film is deposited on the lower dome and the liner.

[0023] The liner of the present invention includes an upper liner having a constant inner diameter, a lower liner that is continuously connected to the upper liner and has a constant inclination angle and an increasing inner diameter, and a connecting portion having a curve between the upper liner and the lower liner.

[0024] The susceptor of the present invention has a thickness of 30 mm or more, the side surface of the susceptor has an inclined angle, and the liner has an inclined portion to maintain a certain distance from the inclined side surface of the susceptor.

[0025] When the susceptor is in the process position (or raised position) to process a substrate, the susceptor rises to the connection portion of the liner. The distance (or gap) between the lower liner and the inclined side of the susceptor is maintained at approximately 2 mm. This narrow gap provides a small conductance, preventing the process gas from moving from the upper space to the lower space.

[0026] A first opening for exhausting process gas and a second opening for the ingress and egress of substrates are formed in the lower liner and contact the connection portion. Therefore, when the susceptor is in the process position, the inclined side of the susceptor faces the first and second openings, substantially closing the first and second openings. However, the connection portion forms a space on the upper side of the susceptor, and the connection portion and the first opening provide a passage for exhausting the process gas.

[0027] The susceptor has a sufficient thickness and is greater than the height of the first opening. In the process position, the upper surface of the susceptor is set to be substantially the same as the upper surface of the first opening, and the lower surface of the susceptor is set to be lower than the lower surface of the first opening. The distance between the inclined side of the susceptor and the lower liner is maintained at about 2 mm. Therefore, the process gas flowing toward the first opening does not flow into the lower space due to its low conductance.

[0028] The susceptor of the present invention has a sufficient thickness and sloped sidewalls to conceal the first opening, preventing process gas injected into the upper space from flowing into the lower space. This prevents the lower space from generating abnormal thin films and foreign particles. In addition, the sloped sidewalls of the susceptor prevent infrared lamps from flowing into the upper space, allowing the susceptor to be heated efficiently.

[0029] According to the present invention, the susceptor is rotated for process uniformity.

[0030] According to the present invention, a purge gas is supplied to the lower dome and a process gas is supplied to the upper space between the upper dome and the susceptor, thereby preventing the process gas from flowing into the lower dome and suppressing deposition of an abnormal thin film on the lower dome.

[0031] According to the present invention, when the susceptor is in a process position, the upper space is smaller than the lower space, and therefore the height of the lower liner is greater than the height of the upper liner. As the upper space decreases, the deposition rate increases.

[0032] In the present invention, the lower liner has an inclined surface so that purge gas supplied from the lower dome is injected toward the upper dome and more lamp heaters can be installed. The gap between the susceptor and the lower liner is maintained narrow, and purge gas supplied from the lower dome is injected toward the upper dome, causing a pressure difference. Due to the narrow gap between the susceptor and the lower liner, process gas injected into the upper space remains only within the upper space, preventing contamination of the lower space.

[0033] In the present invention, the inductively coupled plasma antenna is disposed at a distance from the upper dome. The conductors constituting the antenna are stripline-shaped, and the striplines are aligned vertically across their widths. Therefore, infrared rays incident from the lower dome are minimized. Therefore, the antenna suppresses heating due to infrared rays, and infrared rays reflected from the electromagnetic wave shielding portion minimize shadows.

[0034] In the present invention, the electromagnetic wave shielding portion surrounding the antenna and providing electromagnetic shielding is gold-plated, which reflects infrared rays and makes them re-enter the substrate. In addition, the electromagnetic wave shielding portion is cylindrical rather than dome-shaped, which reduces the re-entering heating of the antenna due to reflected infrared rays.

[0035] In the present invention, the lamp heaters arranged under the lower dome are ring-shaped lamp heaters, and there are a plurality of them. The ring-shaped lamp heaters are grouped together and independently control power to heat the substrate uniformly.

[0036] In the present invention, a turbomolecular pump (TMP) connected to the exhaust section of the chamber maintains a base vacuum inside the chamber and generates stable plasma at a pressure of a few Torr or less during processing.

[0037] The plasma-assisted chemical vapor deposition of the present invention reduces performance degradation due to infrared heating of the inductively coupled plasma antenna disposed on the upper dome, and also provides infrared rays reflected from the electromagnetic wave shielding portion back to the substrate, forming a uniform thin film on the substrate at high speed.

[0038] When a lamp heater is used for process temperatures of around 300°C, the antenna that forms the inductively coupled plasma in the process chamber is heated by the lamp heater, and its resistance increases as the temperature rises. As a result, the antenna consumes energy through ohmic heating, preventing efficient inductively coupled plasma formation. Furthermore, the antenna casts a shadow on the infrared rays reflected from the electromagnetic wave unit, causing temperature non-uniformity on the substrate. To ensure process stability, the electromagnetic wave shield is heated to maintain the antenna at a constant temperature while shielding the electromagnetic waves.

[0039] In addition, the electromagnetic wave shielding portion surrounding the antenna reflects a portion of the infrared rays emitted from the lamp heater, while the remaining infrared rays are absorbed by the electromagnetic wave shielding portion, resulting in heating and reduced reliability. Spatially non-uniform temperature distribution in the electromagnetic wave shielding portion results in spatially non-uniform blackbody radiation. Therefore, the electromagnetic wave shielding portion uses a separate resistance heater to heat at a uniform temperature, providing spatially uniform blackbody radiation. The electromagnetic wave shielding portion is heated to 200 to 600 degrees Celsius, and direct thermal contact with the chamber increases heat loss. Therefore, the electromagnetic wave shielding portion is insulated from the chamber to minimize heat loss. That is, an insulating spacer is disposed between the electromagnetic wave shielding portion and the chamber to reduce heat loss from the electromagnetic wave shielding portion. Meanwhile, the electromagnetic wave shielding portion is electrically grounded through a separate conductive line. The insulating spacer is ring-shaped and made of ceramic material. The insulating spacer is made of a porous ceramic material.

[0040] The present invention will now be described in more detail with reference to the accompanying drawings. The present invention will be described in more detail below with reference to preferred embodiments. However, it will be apparent to those skilled in the art that the embodiments are provided solely for the purpose of illustrating the present invention, and that the present invention is not limited to or restricted by experimental conditions, types of materials, or the like. The present invention is not limited to the embodiments described herein, and may be embodied in other forms. Rather, the embodiments described herein are provided so that the disclosure will be thorough and complete, and will fully convey the concept of the present invention to those skilled in the art. In the drawings, the dimensions of elements may be exaggerated for clarity. The same reference numerals will be used throughout the specification to refer to the same elements.

[0041] FIG. 1 is a conceptual diagram illustrating the position of a home in a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention.

[0042] FIG. 2 is a conceptual diagram illustrating the ascending position in the plasma enhanced chemical vapor deposition apparatus of FIG.

[0043] FIG. 3 is a schematic diagram illustrating the plasma enhanced chemical vapor deposition apparatus of FIG. 1 cut in another direction.

[0044] FIG. 4 is a perspective view illustrating an antenna of the plasma enhanced chemical vapor deposition apparatus of FIG.

[0045] FIG. 5 is a plan view illustrating the antenna of FIG. 4 as viewed from the upper dome direction.

[0046] 1 to 5, a plasma enhanced chemical vapor deposition apparatus 100 according to an embodiment of the present invention includes a chamber 160 having a sidewall, a susceptor 172 for mounting a substrate inside the chamber, an upper dome 152 covering the upper surface of the chamber and made of a dielectric material, a lower dome 158 covering the lower surface of the chamber and made of a dielectric material, a liner 190 disposed inside the chamber between the upper and lower domes, and an antenna disposed on the upper dome for generating inductively coupled plasma. The ratio of the diameter of the antenna to the diameter of the substrate is 80% to 120%.

[0047] The chamber 160 is made of a conductive material and has a cylindrical interior and a rectangular exterior. The chamber 160 is cooled by cooling water. The chamber 160, the upper dome 152, and the lower dome 158 are combined to form a sealed space. The chamber 160 includes a substrate inlet / outlet 160a formed on a side of the chamber and an exhaust port 160b formed on the side opposite the substrate inlet / outlet. The exhaust port 160b is connected to a low vacuum pump and a high vacuum pump 10. The high vacuum pump 10 is a turbomolecular pump. The high vacuum pump maintains a low base pressure and maintains a pressure of several Torr or less during processing. The top surface of the exhaust port 160b is at the same level as or higher than the top surface of the substrate inlet / outlet 160a.

[0048] For example, if the top surface of the exhaust port 160b is flush with the top surface of the substrate inlet / outlet 160a, the top surface of the susceptor 172 is moved to the same position as the top surfaces of the exhaust port 160b and the substrate inlet / outlet 160a during processing, thereby improving symmetry within the chamber and the flow of process gases, thereby providing uniform thin film deposition.

[0049] The susceptor 172 receives the substrate 174 when it is drawn in through a substrate inlet / outlet 160a formed in the side of the chamber. The susceptor 172 is disk-shaped and has a thickness of 30 mm or more. Preferably, the susceptor 172 has a thickness of 40 mm or more. The susceptor includes a curved portion 172 on the upper surface of the susceptor and an inclined side surface 172a connected to the curved portion. The first inclination angle of the inclined side surface 172a of the susceptor is 70 degrees. The diameter of the substrate 174 is 300 mm.

[0050] The susceptor 172 is plate-shaped like the substrate and is made of ceramic or graphite, which has excellent thermal conductivity. The susceptor 172 is heated by infrared rays incident from below and heats the substrate 174 through heat transfer. During processing, the top surface of the susceptor is substantially flush with the top surfaces of the exhaust port and the substrate inlet / outlet. The susceptor 172 rotates to improve azimuthal symmetry.

[0051] The first lifter 184 extends along the central axis of the lower dome 158 and includes a tripod-shaped first lifter body and a first lift pin. The first lifter 184 and the second lifter 182 have a coaxial structure. When the substrate 174 is transferred into the chamber, the first lifter 184 rises from a lowered or home position to support the substrate. Then, the first lifter 184 descends to lower the substrate onto the susceptor 174. The first lifter 184 is made of quartz or metal. The first lifter 184 moves vertically via a drive shaft.

[0052] The second lifter 182 extends along the central axis of the lower dome 158 and includes a tripod-shaped second lifter body and second lift pins. The second lifter 182 raises the susceptor 172, on which the substrate is mounted, from a home position (or lowered position) to a process position (or raised position). The upper surface of the susceptor 172 is substantially flush with the upper surface of the second opening 194b in the liner 190 for substrate inflow in the process position. The upper surface of the susceptor 172 is also substantially flush with the upper surface of the opening 194a in the liner 190 for gas exhaust in the process position. Therefore, the inclined side surface 172a of the susceptor 172 is positioned to block the first opening 194a and the second opening 194b. The second lifter 182 is made of quartz or metal. The second lifter 182 moves vertically via a drive shaft. The second lifter 182 rotates to rotate the susceptor.

[0053] The upper dome 152 is made of a transparent dielectric material such as quartz or sapphire. The upper dome 152 is inserted into a recess formed on the upper surface of the chamber 160 and coupled thereto. The coupling portion of the upper dome 152 that couples with the chamber 160 for vacuum sealing is shaped like a washer. The upper dome 152 is arc-shaped or elliptical-shaped. The upper dome 152 transmits infrared rays incident from below. The infrared rays reflected from the electromagnetic wave shielding portion 130 pass through the upper dome 152 and re-enter the substrate 174.

[0054] The lower dome 158 is made of a transparent dielectric material such as quartz or sapphire. The lower dome 158 includes a funnel-shaped lower dome body 158b, a washer-shaped coupling portion 158a that couples with a recess formed on the lower surface of the chamber, and a cylindrical pipe 158c connected to the center of the lower dome body 158b. The lower dome 158 is inserted into the recess formed on the lower surface of the chamber to couple with it. The coupling portion 158a of the lower dome 158 that couples with the chamber for vacuum sealing is washer-shaped. The drive shafts of the first and second lifters are inserted into the cylindrical pipe 158c. Purge gas is supplied through the lower dome via a flow path. The flow path is the cylindrical pipe 158c. The purge gas is an inert gas such as argon.

[0055] A liner 190 is disposed inside the chamber, between the upper dome 152 and the lower dome 158. The liner 190 includes an inclined portion 195 with an inclined inner surface. A second inclination angle of the inclined portion of the liner is the same as the first inclination angle of the inclined side surface 172a of the susceptor. The first and second inclination angles are 70 degrees. When the first and second inclination angles are the same, the inclined side surface 172a of the susceptor and the inclined portion 195 of the liner maintain a constant distance. When the susceptor is in a process position, the inclined side surface 172a of the susceptor and the inclined portion 195 of the liner maintain a minimum distance of about 2 mm.

[0056] The liner 190 includes an upper liner 192 having a first inner diameter D1 and disposed adjacent to the upper dome, and a lower liner 194 connected to the upper liner 192 and having a sloped portion 195 where the inner diameter increases. The lower liner 194 is disposed adjacent to the lower surface of the upper liner 192 and includes a first opening 194a for exhausting gas and a second opening 194b on the other side opposite the first opening 194a to provide a passage for a substrate. The liner 190 further includes a curved connection portion 196 between the upper and lower liners. The upper liner 192 and the lower liner 194 are integrally formed. The liner includes an upper liner having a constant inner diameter, a junction portion of the upper liner that has a curvature and an increasing diameter, and a lower liner having a constant slope at the junction portion.

[0057] When the susceptor 172 is in the lowered position, the distance between the inclined portion 195 of the lower liner and the inclined side surface 172a of the susceptor is between 7 mm and 13 mm, preferably about 11 mm.

[0058] When the susceptor 172 is in the raised position, the distance between the susceptor's inclined side 172a and the liner's inclined portion 195 is 1 to 3 mm, preferably 2 mm. This narrow distance reduces the cross-sectional area through which fluid flows, providing low conductance. A susceptor thickness of several tens of millimeters or more provides lower conductance to the fluid.

[0059] When the susceptor 172 is in the raised position, the vertical distance between the curved portion 172b of the susceptor 172 and the connection portion 196 of the liner is 4 mm to 7 mm, preferably 5.7 mm. The outer diameter of the upper surface of the susceptor 172 is substantially the same as or several millimeters larger than the inner diameter D1 of the upper liner 192. When the susceptor 172 is raised and the upper surface of the susceptor 172 is flush with the first opening, the connection portion 196 provides an exhaust passage through which process gas can flow to the first opening.

[0060] The liner 190 is a transparent or opaque dielectric material. The liner 190 is made of quartz, alumina, sapphire, or aluminum nitride. The liner 190 is selected as a material that suppresses the deposition of abnormal thin films. If the liner 190 becomes contaminated, it can be disassembled and cleaned. The liner 190 includes an upper liner and a lower liner.

[0061] The upper liner 192 has an overall ring shape, and the upper surface of the upper liner 192 is a curved surface having the shape of the upper dome. The outer upper surface of the upper liner 192 has a flat portion. The inner diameter of the upper liner 192 is D1.

[0062] The upper liner 192 includes at least one process gas supply part 159a that supplies a process gas through a side surface of the upper liner 192. The process gas supply part 159a protrudes from the inner surface of the upper liner 172. For example, the process gas supply part includes a first process gas supply part 159a that supplies a first process gas, such as SiH4, and a second process gas supply part that supplies a second process gas.

[0063] The first process gas supply portion 159a protrudes largely from the side of the upper liner to increase the exposure of the first process gas, such as SiH4, to the plasma. Meanwhile, the second process gas supply portion protrudes slightly from the side of the upper liner to decrease the exposure of the second process gas, such as hydrogen gas H2, to the plasma. The purge gas flows from the lower dome into the upper space 12 of the chamber, so it is supplied uniformly around the circumference, resulting in a spatially uniform pressure distribution.

[0064] The connection portion 196 is a recessed structure having a curvature on the inner lower surface of the upper liner. The curved portion 172b of the susceptor faces the connection portion 196 with a certain gap therebetween.

[0065] The lower liner 194 is disposed inside the chamber and has a cylindrical shape surrounding the inner periphery of the upper edge of the lower dome. The lower liner 194 includes a sloped lower outer surface 197a for coupling with the lower dome 158 and a sloped portion 195 on the inner surface. The sloped lower outer surface 197a has a flat portion 197 on the outside. The second slope angle θ of the sloped portion is approximately 70 degrees. The lower liner 194 includes a first opening 194a formed on the inner surface adjacent to the upper liner to exhaust gas and a second opening 194b formed on the other side opposite the first opening 194a to provide a substrate passage. The first opening 194a and the second opening 194b are formed in the sloped portion 195. The first opening 194a is aligned with the exhaust portion, and the second opening 194b is aligned with the substrate inlet / outlet. When the susceptor 172 is in the raised position, the first opening 194a and the second opening 194b are substantially closed by the susceptor 172, preventing the process gas in the upper space 12 from moving to the lower space 14 defined by the susceptor and the lower dome. Meanwhile, the first opening 194a, the connecting portion 194as, and the curved surface 172b of the susceptor provide a passage through which the process gas can flow.

[0066] The heat insulating portion 162 is disposed between the lower surface of the chamber 160 and the reflector 161 and has a ring shape. The heat insulating portion 162 reduces heat transfer from the heated reflector 161 to the chamber. The heat insulating portion 162 is made of a ceramic material. The upper surface of the heat insulating portion 162 has a recess. The recess in the heat insulating portion and the recess in the lower surface of the chamber receive the washer-shaped coupling portion 158a of the lower dome and form a vacuum seal.

[0067] The concentric lamp heater 166 includes a plurality of concentric ring-shaped lamp heaters and is connected to a power source 164. The concentric ring-shaped lamp heaters are arranged at regular intervals along the inclined surface of the lower dome 158. The concentric lamp heaters 166 are divided into three groups and are supplied with power independently from each other. The concentric ring-shaped lamp heaters are aligned by inserting them into ring-shaped grooves formed on the inclined surface of the reflector 161. For example, the concentric lamp heaters 166 are eight halogen lamp heaters. The lower three lamp heaters form a first group, the middle two lamp heaters form a second group, and the upper three lamp heaters form a third group. The first group is connected to a first power source 164a, the second group is connected to a second power source 164b, and the third group is connected to a third power source 164c. The first to third power sources 164a to 164c are independently controlled to heat the substrate uniformly.

[0068] The reflector 161 supports the lower surface of the heat insulating part 162 and mounts the lamp heater 166. The inclined surface on which the lamp heater 166 is mounted is cone-shaped to maintain a certain distance from the inclined surface of the lower dome 158. The reflector 161 is made of a conductor and is cooled by cooling water.

[0069] The clamp 150 is positioned to contact the upper surface of the chamber 160 and cover the edge of the upper dome 152. The clamp 150 is a part of the chamber that functions as a lid for the chamber. The clamp 150 is made of a conductive material and is cooled by cooling water. The lower surface of the clamp 150 has a recess to mate with the washer-shaped mating portion of the upper dome and includes a curved portion 150a to cover a portion of the curved portion of the upper dome 152. The curved portion 150a of the clamp 150 is gold-plated to reflect infrared rays. The inner diameter of the clamp 150 is substantially the same as or larger than the inner diameter D1 of the upper liner. The inner diameter of the clamp 150 is also the same as the diameter of the electromagnetic wave shielding portion 130. The inner diameter of the clamp 150 is substantially the same as the inner diameter of the electromagnetic wave shielding portion 130. The inner diameter of the electromagnetic wave shielding portion 130 is 410 mm.

[0070] The antenna 110 includes two one-turn unit antennas 110a and 110b. The antenna 110 is arranged to overlap each other at the top and bottom. The one-turn unit antennas are stripline-shaped with a width greater than a thickness, and the width direction of the one-turn antennas is vertical. The two one-turn unit antennas are connected in parallel to an RF power source 140. The RF power source 140 supplies RF power to the antenna 110 through an impedance matching box 142 and a power supply line 143. The antenna includes two one-turn unit antennas, and the two one-turn unit antennas are arranged to overlap each other at the top and bottom. The two one-turn unit antennas are connected in parallel to an RF power source, and the width direction of the one-turn unit antennas is vertical.

[0071] The power supply line 143 is connected to a "T"-shaped horizontal power supply line 143a and branches symmetrically. One end of each of the pair of one-turn antennas is connected to a pair of vertical power supply lines 143b extending vertically. The pair of vertical power supply lines 143b are connected to each other by the horizontal power supply line 143a and then connected to an RF power source. The pair of vertical power supply lines 143b are disposed to pass through the electromagnetic wave shielding portion. The horizontal power supply line 143a is disposed outside the electromagnetic wave shielding portion 130.

[0072] Antennas that carry RF current must have a sufficient cross-sectional area for high current and must form a closed loop to generate sufficient magnetic flux. Also, multiple turns are required to ensure sufficient magnetic flux or high inductance. Therefore, a laminated structure is required. However, antennas with a vertical width take up a lot of space and are not usually used because they are not suitable for generating sufficient magnetic flux.

[0073] In the present invention, the antenna 110 uses a vertical stripline to absorb infrared rays incident from the top or bottom of the antenna and minimize an increase in resistance due to heating. The antenna 110 has high transmittance to infrared rays.

[0074] The antenna is coated with gold (Au) or silver (Ag) to increase infrared reflection. A two-layer antenna is used to ensure sufficient magnetic flux. The one-turn antenna is located on the top surface where RF power is supplied, reducing power loss due to capacitive coupling. The aspect ratio (ratio of width (W) to thickness (t)) of the stripline (W / t) is 10 or more. The stripline is several millimeters thick and several centimeters wide. The vertical stripline structure does not obstruct the flow of air, providing smooth air cooling. In addition, infrared rays reflected from the electromagnetic shielding portion are minimized from casting a shadow on the antenna.

[0075] The lower surface of the antenna 110 is substantially flush with the upper surface of the clamp 150 and is higher than the highest point of the upper dome 152. Therefore, the antenna 110 does not directly contact the upper dome 152 and does not directly heat the upper dome 152 through heat transfer. The two one-turn unit antennas 110a and 110b are rotated 180 degrees and arranged to overlap each other. A predetermined section of each of the one-turn unit antennas 110a and 110b is arranged on the lower surface, and the remaining section is arranged on the upper surface.

[0076] The one-turn unit antennas 110a and 110b are connected to the vertical power supply line 143b and include first curved portions 113a and 113b that extend from the upper surface by rotating 90 degrees clockwise along a circumference having a first radius R1, first vertical extensions 114a and 114b that change the layout plane from the upper surface to the lower surface at the first curved portions, and second curved portions that rotate 180 degrees clockwise along a circumference having a first radius R1 at the first vertical extensions. 115a, 115b; second vertical extensions 116a, 116b, continuously connected to the second curved portions, change their radius from the first radius to a second radius R2 smaller than the first radius, change the layout plane from the lower surface to the upper surface, and change their radius from the second radius to the first radius; and third curved portions 117a, 117b, rotated 90 degrees clockwise along a circle having the first radius from the second vertical extensions and extending from the upper surface. The third curved portions 117a, 117b are connected to a ground portion extending in the radial direction. The third radius of the circle connecting the pair of vertical power supply lines 143b is R3. The third radius R3 is smaller than the second radius R2. The pair of vertical power supply lines 143b extend through the upper surface of the electromagnetic wave shielding unit 130.

[0077] The ground fixing part 119 fixes the other end of each of the pair of one-turn antennas to the electromagnetic shield. The ground fixing part 119 is electrically connected to the ground part 118 and is connected to the electromagnetic shield 130 by changing the placement plane to the lower surface of the antenna. The ground fixing part 119 is formed of a conductor and electrically connected to the electromagnetic shield 130. The ground fixing part 119 extends radially from the upper surface of the one-turn antenna, then extends to the lower surface, and then extends radially again from the lower surface. The third curved parts 117a and 117b include a ground part 118 extending in the axial direction, and one end of the ground fixing part 119 is screw-coupled to the ground part 118. The ground fixing part 119 has the same stripline structure as the antenna. The other end of the ground fixing part 119 is bent in the azimuth direction to be inserted into the inner surface of the electromagnetic shield and screw-coupled to the electromagnetic shield 130. The ground fixture 119 reduces parasitic inductance in the bent structure and provides a symmetrical structure.

[0078] The insulating fixing part 18 extends radially in parallel with the ground fixing part 119 and is coupled to the lower surface of the one-turn antenna to be fixed to the electromagnetic wave shielding part 130. The insulating fixing part 18 provides mechanical stability to the antenna 110. The insulating fixing part 18 is made of a dielectric material such as ceramic or plastic. One end of the insulating fixing part 18 is bent in the azimuth direction to be screwed to the second curved parts 115a and 115b, and the other end of the insulating fixing part 18 is bent in the azimuth direction to be inserted into the inner surface of the electromagnetic wave shielding part and screwed to the electromagnetic wave shielding part 130.

[0079] The electromagnetic wave shielding part 130 is disposed on the clamp 150 and surrounds the antenna 110. The inner surface of the electromagnetic wave shielding part 130 is coated with gold (Au). The electromagnetic wave shielding part 130 shields electromagnetic waves radiated from the antenna and reflects infrared rays radiated from the lamp heater. The electromagnetic wave shielding part 130 is heated by a built-in heater. The temperature of the electromagnetic wave shielding part 130 is 200 to 600 degrees Celsius. The electromagnetic wave shielding part 130 shields electromagnetic waves radiated from the antenna. The electromagnetic wave shielding part 130 is made of a conductive material and is heated by a heater embedded inside. The electromagnetic wave shielding part is grounded by a separate conductor.

[0080] The inner diameter of the electromagnetic wave shielding part 130 is 410 mm, the outer diameter distance between the antenna 110 and the electromagnetic wave shielding part 130 is 27 mm, and the vertical distance between the antenna and the electromagnetic wave shielding part is 15 mm. The diameter of the antenna is 356 mm. The inner diameter of the electromagnetic wave shielding part 130 is substantially the same as the inner diameter of the clamp. That is, when the outer diameter distance between the antenna 110 and the electromagnetic wave shielding part 130 is about 27 mm, the thin film uniformity significantly increases to 3.1%.

[0081] The insulating spacer 339 provides thermal insulation between the electromagnetic wave shielding portion 130 and the upper surface of the chamber. The insulating spacer 339 is a ring-shaped ceramic material. The insulating spacer 339 is covered with a wire mesh gasket. The wire mesh gasket electrically connects the electromagnetic wave shielding portion 130 and the clap and minimizes heat transfer.

[0082] The cooling housing 132 is disposed at a distance from the electromagnetic wave shielding part 130 and surrounds it. The cooling housing 132 has a flow path therein and is cooled by a refrigerant. The cooling housing 132 is made of a conductive material and is attached to the clamp 150. The cooling housing 132 blocks radiant heat from the electromagnetic wave shielding part to prevent damage to external components.

[0083] A cooling housing 132 is disposed on the clamp 150 to cover the electromagnetic wave shielding portion. The cooling housing 132 includes a flow path 132a for injecting and discharging air into the electromagnetic wave shielding portion 130. The air injected into the electromagnetic wave shielding portion cools the antenna and the upper dome.

[0084] FIG. 6 is a plan view illustrating an antenna according to another embodiment of the present invention.

[0085] As shown in Figure 6, the antenna 100' includes two one-turn unit antennas 110a and 110b. The one-turn unit antennas 110a and 110b are first curved portions 113a, 113b connected to the vertical power supply line 143b, rotated 90 degrees clockwise along a circumference having a first radius R1 and extending from the upper surface; first vertical extensions 114a, 114b changing the arrangement plane from the upper surface to the lower surface at the first curved portions; second curved portions 115a, 115b changing 180 degrees clockwise along the circumference having the first radius R1 at the first vertical extensions; second vertical extensions 116a, 116b continuously connected to the second curved portions, changing the radius from the first radius to a second radius R2 smaller than the first radius, changing the arrangement plane from the lower surface to the upper surface, and changing the radius from the second radius to the first radius; and third curved portions 117a, 117b changing 90 degrees clockwise along the circumference having the first radius at the second vertical extensions and extending from the upper surface. The third curved portions 117a and 117b are connected to a ground portion 118 extending in a radial direction. The radius of a circle connecting the pair of vertical power supply lines 143b is R2. The pair of vertical power supply lines 143b extend through the top surface of the electromagnetic wave shielding portion 130.

[0086] The inner diameter of the electromagnetic wave shielding part 130 is 410 mm, the radial distance between the antenna and the electromagnetic wave shielding part is 76 mm, and the vertical distance between the antenna and the electromagnetic wave shielding part is 15 mm. The diameter of the antenna is 258 mm. The inner diameter of the electromagnetic wave shielding part 130 is substantially the same as the inner diameter of the clamp.

[0087] The experimental results showing the HZO deposition film thickness distribution in a plasma enhanced chemical vapor deposition apparatus having a 356 mm diameter antenna according to an embodiment of the present invention will be described. HZO deposition film thickness maps according to wafer position were investigated under a number of process conditions.

[0088] As shown in FIG. 1, the antenna diameter was 356 mm. The ratio of the antenna diameter to the substrate diameter was approximately 118%. The inner diameter of the electromagnetic wave shielding portion 130 was 410 mm, the radial distance between the antenna and the electromagnetic wave shielding portion was 27 mm, and the vertical distance between the antenna and the electromagnetic wave shielding portion was 15 mm. The inner diameter of the electromagnetic wave shielding portion 130 was substantially the same as the inner diameter of the clamp. The substrate was heated to 320°C by a lamp heater. The power supplied to the antenna for inductively coupled plasma was 1000 W. The thin film was an HZO atomic layer deposition thin film, in which HfO and ZrO were alternately deposited. The deposition pressures were 9 mTorr and 80 mTorr. At 9 mTorr and 80 mTorr, the deposition rate showed azimuthal symmetry.

[0089] At 9mTorr, the uniformity is 7.53%. In this case, the deposition rate is higher at the edge of the substrate. However, at 80mTorr, the deposition rate is higher at the center of the substrate and slightly increases at the edge. This results in an excellent uniformity of 3.1%. By adjusting the pressure around 80mTorr, the uniformity can be fine-tuned. The inventors interpret this excellent uniformity as a result of the antenna diameter.

[0090] The experimental results showing the HZO deposition film thickness distribution in a plasma enhanced chemical vapor deposition apparatus having an antenna with a diameter of 258 mm according to an embodiment of the present invention will be described.

[0091] As shown in FIG. 6, the antenna diameter was 258 mm. The ratio of the antenna diameter to the substrate diameter was approximately 86%. The inner diameter of the electromagnetic wave shielding portion 130 was 410 mm, the radial distance between the antenna and the electromagnetic wave shielding portion was 76 mm, and the vertical distance between the antenna and the electromagnetic wave shielding portion was 15 mm. The inner diameter of the electromagnetic wave shielding portion 130 was substantially the same as the inner diameter of the clamp. The substrate temperature was heated to 320°C by a lamp heater. The power supplied to the antenna for inductively coupled plasma was 1000 W. The thin film was an HZO atomic layer deposition thin film, in which HfO and ZrO were alternately deposited. The plasma gas pressure was 9 mTorr of hydrogen. At 9 mTorr, the deposition rate showed azimuthal symmetry.

[0092] At 9 mTorr, the uniformity is 13.22%, which indicates that the deposition rate is slightly higher at the edge of the substrate.

[0093] This section describes experimental results showing the HZO deposition film thickness distribution in a plasma enhanced chemical vapor deposition (PECVD) apparatus with a 298 mm diameter antenna according to an embodiment of the present invention. The antenna diameter is 298 mm. The ratio of the antenna diameter to the substrate diameter is approximately 99%.

[0094] The electromagnetic wave shielding part 130 has an inner diameter of 410 mm, which is substantially the same as the inner diameter of the clamp.

[0095] The substrate temperature was heated to 320°C by a lamp heater. The power supplied to the antenna for inductively coupled plasma was 1000W. The thin film was an HZO atomic layer deposition thin film, in which HfO and ZrO were alternately deposited. The pressures were 9 mTorr and 50 mTorr. At 9 mTorr, the deposition rate showed azimuthal symmetry. However, at 50 mTorr, the deposition rate did not show azimuthal symmetry and showed a higher deposition rate at the 12 o'clock direction.

[0096] At 9 mTorr, the uniformity is 10.95 percent, with a slightly higher deposition rate at the edge of the substrate.

[0097] At 50 mTorr, the uniformity is 16.05 percent, with the deposition rate being slightly higher at the edge of the substrate.

[0098] According to the experimental results of the present invention, when the antenna diameter is 356 mm, azimuthal symmetry and a high deposition uniformity of 3.1% are ensured. That is, when the ratio of the antenna diameter to the substrate diameter is about 120%, a high deposition uniformity of 3% is achieved, which is used in semiconductor device manufacturing.

[0099] When the antenna diameter is 356 mm, the physical reason for the high deposition uniformity of the HZO high-k thin film is interpreted as follows. Because the distance between the electromagnetic shield and the stripline antenna is approximately 27 mm, which is close enough, some of the antenna's RF power leaks into the electromagnetic shield instead of being used to generate inductively coupled plasma. This is interpreted as changing the time-varying magnetic field formed by the antenna, and changing the spatial distribution of the induced electric field formed by the time-varying magnetic field. At pressures of several tens of mTorr or more, the plasma density at the edge of the substrate is relatively reduced compared to the center, which is interpreted as improving the overall deposition uniformity. In particular, in the atomic layer deposition process, deposition uniformity is more important than the thin film deposition rate.

[0100] Although the present invention has been illustrated and described above with respect to specific preferred embodiments, the present invention is not limited to such embodiments and includes all various forms of embodiments that can be implemented by a person having ordinary skill in the art to which the invention pertains without departing from the technical concept of the present invention as claimed in the claims.

Claims

1. a chamber having a sidewall; a susceptor for mounting a substrate inside the chamber; an upper dome covering an upper surface of the chamber and formed of a dielectric material; a lower dome covering a lower surface of the chamber and formed of a dielectric material; a liner disposed inside the chamber and between the upper dome and the lower dome; an antenna disposed on the upper dome for forming an inductively coupled plasma; A substrate processing apparatus comprising:

2. A substrate processing apparatus, wherein a ratio of a diameter of the antenna to a diameter of the substrate is 80% to 120%.

2. The antenna includes two one-turn unit antennas; The two one-turn unit antennas are arranged so as to overlap each other on the upper and lower surfaces, The two one-turn unit antennas are connected in parallel to an RF power source; 2. The substrate processing apparatus according to claim 1, wherein the one-turn unit antenna is set up vertically in a width direction.

3. The one-turn antenna has a stripline shape with a width greater than a thickness, The width direction of the one-turn unit antenna is vertically set up, 3. The substrate processing apparatus according to claim 2, wherein the ratio W / t of the width W to the thickness t is 10 or more.

4. one end of each of the pair of one-turn antennas is connected to a pair of vertical power supply lines extending vertically; 4. The substrate processing apparatus according to claim 3, wherein the pair of vertical power supply lines are connected to each other by a horizontal power supply line and then connected to an RF power source.

5. a clamp in contact with the upper surface of the chamber and positioned over the edge of the upper dome; an electromagnetic wave shielding portion disposed on the clamp and surrounding the antenna; a ground fixing part for fixing the other end of each of the pair of one-turn antennas to the electromagnetic wave shielding part, 3. The substrate processing apparatus of claim 2, wherein the ground fixing part extends radially from an upper surface of the one-turn antenna, then extends to the lower surface, and then extends radially from the lower surface again.

6. 6. The substrate processing apparatus of claim 5, further comprising an insulating fixing part extending parallel to the ground fixing part and coupled to a lower surface of the one-turn antenna to fix it to the electromagnetic wave shielding part.

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