Integrated Process Flow for Hybrid Bonding

Abstract

A process flow for bonding a die to a substrate incorporates defect risk management and yield promotion by reducing flow complexity. In some embodiments, the process flow can include a radiation process on the component substrate to weaken an adhesive bond of the die from a surface of the component substrate, a first wet clean process on the component substrate after the radiation process to clean the die bonding side, an eject and pick process after performing the first wet clean process to remove the die from the component substrate for bonding to the substrate, a plasma activation process on the substrate, a second wet clean process after the plasma activation process on the substrate to clean the substrate bonding side of the substrate, and a hybrid bonding process to bond the die bonding side of the die to the substrate bonding side of the substrate.

Description

[Technical Field]

[0001] FIELD Embodiments of the present principles relate generally to semiconductor processing of semiconductor substrates. [Background technology]

[0002] The die is attached to the substrate using a bonding process. When the die has surface features containing metallic materials that will connect with other metallic materials on the substrate, the process is known as hybrid bonding, which involves bonding two or more types of materials. To enhance the bond or attraction of the dielectric material between the die and the substrate, the die and substrate undergo a complex preparation process before the bonding process. A more complex preparation process flow not only increases preparation time, but also increases maintenance efforts due to the increased number of process chambers required, which directly impacts bonding yield. In some cases, this process can also increase the risk of defects by exposing the substrate to additional environments that can deposit particulates on the substrate.

[0003] Thus, the inventors have provided an improved hybrid bonding process flow that reduces the risk of defects and increases bonding throughput while decreasing bonding costs. Summary of the Invention

[0004] Provided herein are methods for improving hybrid bonding process flows.

[0005] In some embodiments, a method for bonding a die to a substrate may include performing a radiation process on a component substrate having a plurality of dies to weaken adhesive bonds of the plurality of dies from a surface of the component substrate; performing a first wet cleaning process on the component substrate after the radiation process to clean at least one die bonding surface; performing an eject and pick process after performing the first wet cleaning process to remove at least one of the plurality of dies from the component substrate for bonding to the substrate; performing a plasma activation process on the substrate; performing a second wet cleaning process after the plasma activation process on the substrate to clean the substrate bonding surface of the substrate; and performing a hybrid bonding process to bond at least one die bonding surface of at least one of the plurality of dies to the substrate bonding surface of the substrate.

[0006] In some embodiments, a hybrid bonding tool for bonding die to a substrate includes at least one radiation chamber, at least one wet clean chamber, at least one plasma activation chamber, at least one hybrid bonding chamber, and a controller for the hybrid bonding tool, the hybrid bonding tool including: a radiation process in the at least one radiation chamber on a component substrate having a plurality of die to weaken adhesive bonds of the plurality of die from a surface of the component substrate; a first wet clean process in the at least one wet clean chamber on the component substrate after the radiation process to clean at least one die bonding surface; and a second wet clean process in the at least one wet clean chamber on the component substrate after the radiation process to remove at least one of the plurality of die from the component substrate for bonding to the substrate. and a controller configured to bond the die to the substrate by causing an eject and pick process in the at least one hybrid bonding chamber after performing a first wet cleaning process to remove the die from the substrate, a plasma activation process in the at least one plasma activation chamber on the substrate, a second wet cleaning process in the at least one wet cleaning chamber after the plasma activation process on the substrate to clean the substrate bonding side of the substrate, and a hybrid bonding process in the at least one hybrid bonding chamber to bond at least one die bonding side of at least one of the plurality of dies to the substrate bonding side of the substrate.

[0007] In some embodiments, a non-transitory computer-readable medium having stored thereon instructions that, when executed, cause a method for bonding die to a wafer to be performed, the method including: performing a radiation process on a component substrate having a plurality of die to weaken adhesive bonds of the plurality of die from a surface of the component substrate; performing a first wet cleaning process on the component substrate after the radiation process to clean at least one die bonding surface; performing an eject and pick process after performing the first wet cleaning process to remove at least one of the plurality of die from the component substrate for bonding to a substrate; performing a plasma activation process on the substrate; performing a second wet cleaning process after the plasma activation process on the substrate to clean the substrate bonding surface of the substrate; and performing a hybrid bonding process to bond at least one die bonding surface of at least one of the plurality of die to the substrate bonding surface of the substrate.

[0008] Other and further embodiments are disclosed below.

[0009] Embodiments of the present principles, briefly summarized above and described in more detail below, can be understood by reference to exemplary embodiments of the principles as illustrated in the accompanying drawings. However, the accompanying drawings illustrate only typical embodiments of the present principles and therefore should not be considered limiting in scope, as the present principles are susceptible to other equally effective embodiments. [Brief explanation of the drawings]

[0010] [Figure 1] 1 illustrates a process flow for hybrid bonding in accordance with some embodiments of the present principles; [Figure 2] FIG. 1 illustrates a process flow for hydration-free hybrid bonding, according to some embodiments of the present principles. [Figure 3]1A-1C illustrate process flows for hybrid bonding without degassing of component substrates, in accordance with some embodiments of the present principles. [Figure 4] 1A-1C illustrate process flows for hybrid bonding with substrate activation only, in accordance with some embodiments of the present principles. [Figure 5] 1A-1C illustrate methods for hydration-free hybrid bonding, in accordance with some embodiments of the present principles. [Figure 6] 1A-1C illustrate methods for hybrid bonding without venting of component substrates, in accordance with some embodiments of the present principles; [Figure 7] 1A-1C illustrate methods for hybrid bonding with substrate activation only, in accordance with some embodiments of the present principles. [Figure 8] 1 is an isometric view of the bonding surface of a die and a substrate, according to some embodiments of the present principles; [Figure 9] 1 is a schematic top view of a multi-chamber processing tool for bonding a die to a substrate, in accordance with some embodiments of the present principles; DETAILED DESCRIPTION OF THE INVENTION

[0011] For ease of understanding, the same reference numerals have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further elaboration.

[0012] The present method provides overall performance improvements in a hybrid bonding process flow by reducing the risk of defects and increasing bonding throughput. The method is optimized for an integrated hybrid bonding tool with an on-board auxiliary process chamber. Typical approaches to improving bonding focus on material selection, process chamber design, and / or chamber processing conditions. The present principle method employs an alternative process flow optimized for better bonding performance and cost reduction based on using an integrated cluster hybrid bonding tool for overall process control of the bonding process.

[0013] An integrated cluster hybrid bonding tool, such as the multi-chamber processing tool shown in FIG. 9 (discussed below), provides multiple processing chambers or stations within a controlled environment. The controlled environment allows processing within individual chambers and movement of substrates between chambers without the risk of contamination from exposure to undesirable environments that could, for example, cause oxidation of materials on the substrate and / or deposition of particulates on the substrate that could cause damage and / or inhibit performance. FIG. 1 illustrates an example of a first integrated tool bonding process flow 100 for hybrid bonding. In the bonding process, both the die (component substrate) and the substrate to which the die is bonded are prepared prior to bonding to improve bonding performance. In some cases, the component substrate 102 can be processed in parallel with, before, or after the substrate 118 to which the die from the component substrate 102 is bonded.

[0014] The component substrate 102 may undergo other processes prior to the hybrid bonding process. These may include upstream processing such as patterning, chemical mechanical polishing (CMP), backgrinding, and dicing. In some embodiments, for example, the die may be separated (singulated) and held together on their backsides by dicing tape to create the component substrate 102. In some embodiments, the die may be reconstituted (molded) on a carrier wafer to form the component substrate 102 from which the die are selected for bonding. In the first integrated tool bonding process flow 100, the component substrate 102 undergoes a first wet cleaning process 104 and a degassing process 106 to help remove moisture from the component substrate 102. The component substrate 102 then undergoes a first plasma activation process 108 to enhance bonding attraction, followed by a first hydration process 110. The component substrate 102 is then subjected to a radiation process 112 (eg, UV radiation, etc.) to loosen the adhesive bonds that hold the die to the component substrate 102 prior to bonding.

[0015] In some embodiments, the substrate 118 may undergo other processes prior to the bonding process flow. The substrate 118 may have a silicon underlayer or no silicon underlayer, or may be a silicon wafer with a glass support, depending on the process flow and use case. The substrate 118 may also have a die pre-stacked thereon. The substrate 118 is processed before, simultaneously with, or after the processing of the component substrate 102. The substrate 118 first undergoes a second wet cleaning process 120 and then a second plasma activation process 122. The substrate then undergoes a second hydration process 124 in preparation for bonding. Bonding is then achieved by subjecting the component substrate 102 to an eject and pick process 114, which allows the die to be selected and flipped in preparation for bonding. In the bonding process 116, the die is placed on the substrate 118 and bonded to the substrate 118, resulting in a die-to-substrate (or chip-to-substrate) bonded substrate 126. Die-to-substrate bonded substrate 126 can have multiple dies bonded to its surface during one or more bonding sessions. FIG. 8 is an isometric view 800 showing a die 802 from component substrate 102 being ejected / flipped and bonded to a substrate bonding surface 806 of substrate 118. When die 802 is attached to component substrate 102, the top surface of die 802 is die bonding surface 804. When die 802 is flipped (808), the bottom surface of die 802 becomes die bonding surface 804. During bonding 810, die bonding surface 804 and substrate bonding surface 806 can be brought into contact and bonded to each other. Bonding performance is affected by parameters such as bonding surface contamination, bonding pressure, and / or bonding temperature.

[0016] The inventors observed that while the first integrated tool bonding process flow 100 enabled acceptable bonding between the die and the substrate, some of the included processes increased the risk of defects and contributed to reduced bonding throughput. The inventors discovered that by eliminating the risky processes, bonding performance could be improved while also increasing bonding throughput. For example, in the second integrated tool bonding process flow 200, the component substrate 102 first undergoes a radiation process 112 before undergoing a degassing process 106. The component substrate 102 then undergoes a first plasma activation process 108 and then a first wet cleaning process 104 before being subjected to an eject and pick process 114. The substrate 118 then undergoes a second plasma activation process 122 and a second wet cleaning process 120 in preparation for bonding. The bonding process 116 places the die from the component substrate 102 onto the substrate 118, resulting in a bonded die-to-substrate substrate 126.

[0017] The inventors have further discovered that by eliminating the additional risky processes, bonding performance is further improved, as is bonding throughput. For example, in a third integrated tool bonding process flow 300, component substrate 102 first undergoes a radiation process 112 before undergoing a first plasma activation process 108. Component substrate 102 then undergoes a first wet cleaning process 104 before undergoing an eject and pick process 114. Substrate 118 undergoes a second plasma activation process 122 and then a second wet cleaning process 120 in preparation for bonding. Bonding process 116 places a die from component substrate 102 onto substrate 118, resulting in a bonded die-to-substrate substrate 126.

[0018] The inventors have also discovered that by further eliminating risky processes, bonding performance can be further improved while also increasing bonding throughput to a higher level. For example, in fourth integrated tool bonding process flow 400, component substrate 102 first undergoes radiation process 112 before undergoing first wet cleaning process 104. Component substrate 102 then undergoes eject and pick process 114. Substrate 118 undergoes second plasma activation process 122 and then second wet cleaning process 120 in preparation for bonding. Bonding process 116 places the die from component substrate 102 onto substrate 118, resulting in die-to-substrate bonded substrate 126.

[0019] FIG. 5 illustrates a method 500 for hybrid bonding in an integrated tool without hydration, according to some embodiments. Method 500 is based on the second integrated tool process flow shown in FIG. 2. The hydration process has been eliminated in both the component substrate processing flow and the substrate processing flow. In block 502, a radiation process is performed on the component substrate. The component substrate may be a tape frame substrate or a carrier with a reconfigured die (molded die), etc., used to support and transport the die for processing in the integrated bonding tool. The radiation process may be, for example, but is not limited to, an ultraviolet (UV) process that weakens the adhesive bond between the die and the component substrate. The radiation process weakens the bond of the die to the component substrate to enable ejection and picking processing at a later stage, but the weakened die bond is sufficient to hold the die in place for other processing until the ejection and picking process stage. In block 504, a degassing process is performed on the component substrate. The degassing process may include heating the component substrate to a temperature sufficient to allow moisture removal and outgassing of the component substrate prior to any plasma processing. At block 506, a plasma activation process is performed on the component substrate. Plasma activation facilitates preparing the bonding surface of the die on the component substrate for bonding. Generally, plasma activation has a limited duration over which the plasma activation remains effective for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required.

[0020] In block 508, a wet cleaning process is performed on the component substrate to clean the die bonding surface before bonding. The cleaner the bonding surface, the stronger the bond strength. In block 510, an ejection and picking process is performed to select (pick) and remove (eject) the die from the component substrate for bonding. The process may also include inverting the die before bonding (see, for example, FIG. 8). Before, after, or simultaneously with the processing of the component substrate (blocks 502-508), the substrate to which the die is bonded may also undergo processing. In block 514, a plasma activation process is performed on the substrate. Plasma activation helps prepare the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration for which the plasma activation remains effective for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required. In block 516, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the stronger the bond strength. In block 512, the selected die is placed on a substrate for bonding to the substrate in a hybrid bonding process. Hybrid bonding is bonding in which at least two different materials are bonded to each other. For example, the dielectric material of the die and the copper interconnects of the die are bonded to the dielectric material of the substrate and the copper interconnects on the substrate. Generally, when the dielectric surfaces of the die and the substrate come into contact, they bond together. A subsequent annealing process can then be used on the bonded die and substrate to expand the copper of the copper interconnects so that the copper interconnects of the die and the substrate flow together and bond.

[0021] FIG. 6 illustrates a method 600 for hybrid bonding in an integrated tool without hydration or component substrate degassing, according to some embodiments. Method 600 is based on the third integrated tool process flow shown in FIG. 3 . The hydration process is eliminated in both the component substrate processing flow and the substrate processing flow, and the component substrate degassing process is also eliminated. Because no wet cleaning is performed before the plasma process, the degassing process to remove moisture is less effective in the bonding flow and is therefore eliminated from the flow. In block 602, a radiation process is performed on the component substrate. The component substrate may be a tape frame substrate used to support and transport a die for processing in an integrated bonding tool or a carrier with a reconfigured die (molded die). The radiation process may be, for example, but is not limited to, an ultraviolet (UV) process that weakens the adhesive bond between the die and the component substrate. The radiation process weakens the die bond to the component substrate to enable ejection and picking at a later stage, but the weakened die bond is sufficient to hold the die in place for other processing until the ejection and picking process stage.

[0022] At block 604, a plasma activation process is performed on the component substrate. Plasma activation facilitates preparing the bonding surface of the die on the component substrate for bonding. Typically, plasma activation has a limited duration during which the plasma activation remains effective for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required. At block 606, a wet cleaning process is performed on the component substrate to clean the die bonding surface before bonding. The cleaner the bonding surface, the higher the bond strength. At block 608, an ejection and picking process is performed to select (pick) and remove (eject) the die from the component substrate for bonding. The process may also include inverting the die before bonding (see, for example, FIG. 8). Before, after, or simultaneously with the processing of the component substrate (blocks 602-606), the substrate to which the die will be bonded may also undergo processing. At block 612, a plasma activation process is performed on the substrate. Plasma activation facilitates preparing the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration during which the plasma activation remains effective for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required. In block 614, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the higher the bond strength. In block 610, the selected die is placed on the substrate for bonding to the substrate in a hybrid bonding process. A subsequent annealing process can then be used on the bonded die and substrate.

[0023] FIG. 7 illustrates a method 700 for hybrid bonding in an integrated tool with substrate activation only, according to some embodiments. Method 700 is based on the fourth integrated tool process flow shown in FIG. 4 . The hydration process is eliminated from both the component substrate processing flow and the substrate processing flow, as well as the component substrate degassing and plasma activation processes. Because plasma activation is not performed on the component substrate, the degassing process to remove moisture for plasma activation is significantly less relevant and is removed from the flow. In block 702, a radiation process is performed on the component substrate. The component substrate may be a tape frame substrate used to support and transport a die for processing in the integrated bonding tool, or a carrier with a reconfigured die (molded die). The radiation process may be, for example, but is not limited to, an ultraviolet (UV) process that weakens the adhesive bond between the die and the component substrate. The radiation process weakens the die bond to the component substrate to enable ejection and picking at a later stage, but the weakened die bond is sufficient to hold the die in place for other processing until the ejection and picking process stage.

[0024] In block 704, a wet cleaning process is performed on the component substrate to clean the die bonding surface before bonding. The cleaner the bonding surface, the stronger the bond strength. In block 706, an ejection and picking process is performed to select (pick) and remove (eject) the die from the component substrate for bonding. The process may also include inverting the die before bonding (see, for example, FIG. 8). Before, after, or simultaneously with the processing of the component substrate (blocks 702-704), the substrate to which the die is bonded may also undergo processing. In block 710, a plasma activation process is performed on the substrate. Plasma activation facilitates preparing the bonding surface of the substrate for bonding. Generally, plasma activation has a limited duration during which the plasma activation remains effective for bonding. In some cases, plasma activation lasts from about 7 hours to about 20 hours before reactivation is required. In block 712, a wet cleaning process is performed on the substrate to clean the substrate bonding surface before bonding. The cleaner the bonding surface, the higher the bond strength. At block 708, the selected die is placed on a substrate for bonding with the substrate in a hybrid bonding process. A subsequent annealing process can then be used on the bonded die and substrate.

[0025] FIG. 9 illustrates a schematic top view of a multi-chamber processing tool 900 (integrated hybrid bonding tool) for bonding a die to a substrate in accordance with at least some embodiments of the present principles. The methods and flows described above can be performed using the multi-chamber processing tool 900. The multi-chamber processing tool 900 generally includes an equipment front-end module (EFEM) 902 and multiple automation modules 910 coupled in series to the EFEM 902. The multiple automation modules 910 are configured to shuttle one or more types of substrates 912 from the EFEM 902 through the multi-chamber processing tool 900 and perform one or more processing steps on the one or more types of substrates 912 (e.g., component substrates having die, substrates for bonding die, etc.). Each of the multiple automation modules 910 generally includes a transfer chamber 916 and one or more process chambers 906 coupled to the transfer chamber 916 for performing one or more processes. The multiple automation modules 910 are coupled to each other via their respective transfer chambers 916, providing modular expandability and customizability for the multi-chamber processing tool 900. As shown in FIG. 9, the plurality of automation modules 910 includes three automation modules, a first automation module 910a coupled to the EFEM 902, a second automation module 910b coupled to the first automation module 910a, and a third automation module 910c coupled to the second automation module 910b.

[0026] The EFEM 902 includes a plurality of load ports 914 for receiving one or more types of substrates 912. In some embodiments, the one or more types of substrates 912 include 200 mm wafers, 300 mm wafers, 450 mm wafers, tape frame substrates, carrier substrates with or without reconfigured dies, silicon substrates, glass substrates, etc. In some embodiments, the plurality of load ports 914 includes at least one of one or more first load ports 914 a for receiving a first type of substrate 912 a or one or more second load ports 914 b for receiving a second type of substrate 912 b. In some embodiments, the first type of substrate 912 a has a different size than the second type of substrate 912 b. In some embodiments, the second type of substrate 912 b includes a tape frame substrate or a carrier substrate. In some embodiments, the second type of substrate 912 b includes multiple dies disposed on a tape frame or carrier plate. In some embodiments, the second type of substrate 912 b can hold dies of different types and sizes. As such, one or more of the second load ports 914b can have different sizes or receiving surfaces configured to load a second type of substrate 912b having a different size. In some embodiments, the multiple load ports 914 are arranged along a common side of the EFEM 902. While Figure 9 shows a pair of first load ports 914a and a pair of second load ports 914b, the EFEM 902 can include other combinations of load ports, such as one first load port 914a and three second load ports 914b.

[0027] In some embodiments, the EFEM 902 includes a scanning station 908 having a substrate ID reader for scanning one or more types of substrates 912 for identifying information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The multi-chamber processing tool 900 is configured to use any identification information from the scanned one or more types of substrates 912 to determine processing based on the identification information, e.g., different processes and / or dispositions for the first type substrates 912 a and the second type substrates 912 b. In some embodiments, the scanning station 908 may be configured to perform rotational movement to align the first type substrates 912 a or the second type substrates 912 b. In some embodiments, one or more of the multiple automation modules 910 include the scanning station 908. The EFEM robot 904 is disposed in the EFEM 902 and configured to transport the first type substrates 912 a and the second type substrates 912 b between the multiple load ports 914 and the scanning station 908. The EFEM robot 904 can include a substrate end effector for handling a first type of substrate 912 a and a second end effector for handling a second type of substrate 912 b. The EFEM robot 904 can rotate or move linearly while rotating.

[0028] The transfer chamber 916 includes a buffer 920 configured to hold one or more first-type substrates 912a. In some embodiments, the buffer 920 is configured to hold one or more of the first-type substrates 912a and one or more of the second-type substrates 912b. The transfer chamber 916 includes a transfer robot 926 configured to transfer the first-type substrates 912a and the second-type substrates 912b between the buffer 920, one or more process chambers 906, and a buffer located in an adjacent one of the plurality of automation modules 910. For example, the transfer robot 926 in the first automation module 910a is configured to transfer the first-type substrates 912a and the second-type substrates 912b between the first automation module 910a and the buffer 920 in the second automation module 910b. In some embodiments, the buffer 920 is located within the interior volume of the transfer chamber 916, advantageously reducing the overall footprint of the tool. Additionally, the buffer 920 may be open to the interior volume of the transfer chamber 916 to facilitate access by the transfer robot 926 .

[0029] The one or more process chambers 906 may include an atmospheric chamber configured to operate under atmospheric pressure and a vacuum chamber configured to operate under vacuum pressure. Examples of atmospheric chambers generally include wet cleaning chambers, radiation chambers, heating chambers, metrology chambers, bonding chambers, etc. Examples of vacuum chambers include plasma activation chambers. Atmospheric chambers of the types described above may also be configured to operate under vacuum, if desired. The one or more process chambers 906 may be any process chamber or module necessary to perform a bonding process, a cleaning process, a radiation process, etc. In some embodiments, the one or more process chambers 906 of each of the plurality of automated modules 910 include at least one of a wet cleaning chamber 922, a plasma activation chamber 930, a degassing chamber 932, a radiation chamber 934, or a bonder chamber 940, such that the multi-chamber processing tool 900 includes at least one wet cleaning chamber 922, at least one plasma activation chamber 930, at least one degassing chamber 932, at least one radiation chamber 934, and at least one bonder chamber 940. The one or more process chambers 906 may be located in any suitable location in the multi-chamber processing tool 900 .

[0030] The wet cleaning chamber 922 is configured to perform a wet cleaning process to clean one or more types of substrates 912 via a fluid, such as water. The wet cleaning chamber 922 may include a first wet cleaning chamber 922a for cleaning a first type of substrate 912a or a second wet cleaning chamber 922b for cleaning a second type of substrate 912b. The degassing chamber 932 is configured to perform a degassing process to remove moisture, for example, via a high-temperature baking process. In some embodiments, the degassing chamber 932 includes a first degassing chamber 932a and a second degassing chamber 932b. The plasma activation chamber 930 may be configured to perform an activation process on the substrates in preparation for hybrid bonding. Activation helps to improve bonding strength between the surfaces. In some embodiments, the plasma activation chamber 930 includes a first plasma activation chamber 930a and a second plasma activation chamber 930b. The radiation chamber 934 is configured to perform a radiation process to reduce adhesion between dies on a component substrate, such as a tape frame substrate or a carrier substrate with reconstructed dies. For example, the radiation chamber 934 may be an ultraviolet radiation chamber configured to direct ultraviolet light toward the component substrate or a heating chamber configured to heat the component substrate. Reducing the adhesion between the die and the component substrate facilitates removal of the die 206 from the component substrate. The bonder chamber 940 is configured to transfer and bond at least a portion of the die from the component substrate to a substrate. The bonder chamber 940 generally includes a first support 942 for supporting one of the first-type substrates 912a and a second support 944 for supporting one of the second-type substrates 912b.

[0031] In some embodiments, the last automated module of the plurality of automated modules 910, e.g., the third automated module 910c in FIG. 9, includes one or more bonder chambers 940 (two are shown in FIG. 9). In some embodiments, a first of the two bonder chambers is configured to remove and bond die having a first size, and a second of the two bonder chambers is configured to remove and bond die having a second size. In some embodiments, one of the plurality of automated modules 910 includes a metrology chamber 918 configured to perform measurements of one or more types of substrates. In FIG. 9, the metrology chamber 918 is shown as part of the second automated module 910b coupled to the transfer chamber 916 of the second automated module 910b. However, the metrology chamber 918 may be coupled to any of the transfer chambers 916 or may be within the transfer chamber 916.

[0032] The controller 980 controls the operation of any of the multi-chamber processing tools described herein, including the multi-chamber processing tool 900. The controller 980 may use direct control of the multi-chamber processing tool 900, or alternatively, may do so by controlling a computer (or controller) associated with the multi-chamber processing tool 900. In operation, the controller 980 enables data collection and feedback from the multi-chamber processing tool 900 to optimize performance of the multi-chamber processing tool 900 and control process flow in accordance with the methods described herein. The controller 980 generally includes a central processing unit (CPU) 982, memory 984, and support circuits 986. The CPU 982 may be any form of general-purpose computer processor that can be used in an industrial environment. The support circuits 986 are conventionally coupled to the CPU 982 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines, such as the methods described above, may be stored in the memory 984 and, when executed by the CPU 982, can transform the CPU 982 into a specific-purpose computer (the controller 980). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the multi-chamber processing tool 900.

[0033] Memory 984 is a form of computer-readable storage medium containing instructions that, when executed by CPU 982, facilitate the operation of semiconductor processes and equipment. The instructions in memory 984 are in the form of a program product, such as a program, that implements the methods of the present principles. The program code may be in any one of several different programming languages. In one example, the present disclosure may be embodied as a program product stored on a computer-readable storage medium for use with a computer system. The program of the program product defines the functions of aspects (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to, non-writable storage media on which information is permanently stored (e.g., a read-only memory device in a computer, such as a CD-ROM disk readable by a CD-ROM drive, flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), and writable storage media on which changeable information is stored (e.g., a floppy disk or hard disk drive in a diskette drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are aspects of the present principles.

[0034] Embodiments according to the present principles may be implemented in hardware, firmware, software, or any combination thereof. Embodiments may also be implemented as instructions stored using one or more computer-readable media, which may be read and executed by one or more processors. A computer-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing platform or a “virtual machine” running on one or more computing platforms). For example, a computer-readable medium may include any suitable form of volatile or non-volatile memory. In some embodiments, a computer-readable medium may include a non-transitory computer-readable medium.

[0035] While the forgoing is directed to embodiments of the present principles, other and further embodiments of the present principles may be devised without departing from the basic scope thereof.

Claims

1. 1. A method for bonding a die to a substrate, comprising: performing a radiation process on a component substrate having a plurality of dies to weaken adhesive bonds of the plurality of dies from a surface of the component substrate; performing a first wet cleaning process on the component substrate after the radiation process to clean at least one die-bonding surface; performing an eject and pick process after performing the first wet cleaning process to remove at least one of the plurality of dies from the component substrate for bonding to a substrate; performing a plasma activated process on the substrate; performing a second wet cleaning process on the substrate after the plasma activation process to clean the substrate bonding surface of the substrate; performing a hybrid bonding process to bond the at least one die bonding surface of the at least one of the plurality of dies to the substrate bonding surface of the substrate; A method comprising:

2. performing a plasma activation process on the component substrate after the radiation process on the component substrate and before performing the first wet cleaning process on the component substrate. The method of claim 1 further comprising:

3. performing a degassing process on the component substrate after the radiation process on the component substrate and before performing the plasma activation process on the component substrate. The method of claim 2 further comprising:

4. 10. The method of claim 1, wherein the radiation process comprises exposing the component substrate to ultraviolet light.

5. The method of claim 1 performed in an integrated hybrid bonding tool.

6. The method of claim 1 wherein the component substrate is a tape frame substrate.

7. The method of claim 1 , wherein the component substrate is a carrier substrate having a reconfigured die.

8. The method of claim 1 , wherein the substrate is a silicon or glass-supported silicon substrate.

9. The method of claim 8 , wherein the substrate has stacked dies from a previous bonding process.

10. 1. A hybrid bonding tool for bonding a die to a substrate, comprising: at least one radiation chamber; at least one wet cleaning chamber; at least one plasma activated chamber; at least one hybrid bonding chamber; a controller of the hybrid bonding tool, a radiation process in the at least one radiation chamber on the component substrate having the plurality of dies thereon to weaken adhesive bonds of the plurality of dies from a surface of the component substrate; a first wet clean process in the at least one wet clean chamber on the component substrate after the radiation process to clean at least one die bonding surface; an eject and pick process in the at least one hybrid bonding chamber after performing the first wet clean process to remove at least one of the plurality of dies from the component substrate for bonding to a substrate; a plasma activation process for the substrate in the at least one plasma activation chamber; a second wet cleaning process in the at least one wet cleaning chamber after the plasma activation process on the substrate to clean a substrate bonding surface of the substrate; and a hybrid bonding process in the at least one hybrid bonding chamber for bonding the at least one die bonding surface of the at least one of the plurality of dies to the substrate bonding surface of the substrate. a controller configured to bond the die to the substrate by causing the A hybrid bonding tool comprising:

11. The controller: performing a plasma activation process on the component substrate in the at least one plasma activation chamber after the radiation process on the component substrate and before performing the first wet cleaning process on the component substrate; 11. The hybrid bonding tool of claim 10, further configured to bond the die to the substrate by performing:

12. and at least one degassing chamber, wherein the controller: performing a degassing process on the component substrate in the at least one degassing chamber after the radiation process on the component substrate and before performing the plasma activation process on the component substrate; and further performing the steps of: bonding the die to the substrate; The hybrid bonding tool of claim 11 .

13. The hybrid bonding tool of claim 10 , wherein the radiation process includes irradiating the component substrate with ultraviolet light.

14. 1. A non-transitory computer-readable medium having stored thereon instructions that, when executed, cause a method for bonding a die to a wafer to be performed, the method comprising: performing a radiation process on a component substrate having a plurality of dies to weaken adhesive bonds of the plurality of dies from a surface of the component substrate; performing a first wet cleaning process on the component substrate after the radiation process to clean at least one die-bonding surface; performing an eject and pick process after performing the first wet clean process to remove at least one of the plurality of dies from the component substrate for bonding to a substrate; performing a plasma activated process on the substrate; performing a second wet cleaning process on the substrate after the plasma activation process to clean the substrate bonding surface of the substrate; performing a hybrid bonding process to bond the at least one die bonding surface of the at least one of the plurality of dies to the substrate bonding surface of the substrate; 1. A non-transitory computer-readable medium comprising:

15. The method comprises: performing a plasma activation process on the component substrate after the radiation process on the component substrate and before performing the first wet cleaning process on the component substrate.

15. The non-transitory computer-readable medium of claim 14, further comprising:

16. The method comprises: performing a degassing process on the component substrate after the radiation process on the component substrate and before performing the plasma activation process on the component substrate.

16. The non-transitory computer-readable medium of claim 15, further comprising:

17. The non-transitory computer-readable medium of claim 14 , wherein the radiation process comprises irradiating the component substrate with ultraviolet light.

18. The non-transitory computer-readable medium of claim 14 , wherein the component substrate is a tape frame substrate.

19. 15. The non-transitory computer-readable medium of claim 14, wherein the component substrate is a carrier substrate having a reconfigured die.

20. 15. The non-transitory computer-readable medium of claim 14, wherein the substrate is a silicon or glass-supported silicon substrate with or without stacked dies from a previous bonding process.

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