Perovskite precursor materials and preparation methods, perovskite materials and preparation methods, perovskite films, perovskite precursor slurries, perovskite solar cells and fabrication methods, and electrical devices

Abstract

This application relates to perovskite precursors and preparation methods, perovskite materials and preparation methods, perovskite films, perovskite precursor slurries, perovskite solar cells and fabrication methods, and electrical devices. The perovskite precursor comprises a precursor base material and dopant ions, including at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halide ions, wherein at least some of the dopant ions are incorporated into the crystal lattice of the precursor base material.

Description

[Technical Field]

[0001] The present application relates to the technical field of solar cells, and in particular to perovskite precursor materials and preparation methods, perovskite materials and preparation methods, perovskite films, perovskite precursor slurries, perovskite solar cells and fabrication methods, and electrical devices. [Background technology]

[0002] Perovskite solar cells are a new type of solar cell that is currently receiving a lot of research. In perovskite solar cells, the perovskite layer has a significant impact on the cell performance. Improving the materials for the perovskite layer is a good entry point for improving the performance of perovskite solar cells. Summary of the Invention

[0003] According to embodiments of the present application, the present application provides a perovskite precursor material including a precursor base material and dopant ions including at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions.

[0004] The addition of dopant ions to the perovskite precursor materials can improve the performance of the precursor materials, and when these perovskite precursor materials are prepared as perovskite materials, they can passivate the grain boundaries of the perovskite substrate to a certain extent, further improving the photoelectric conversion efficiency of perovskite solar cells.

[0005] In some embodiments, the mass percent of the dopant ions, as a percentage of the mass of the perovskite precursor material, is between 0.0001% and 3%.

[0006] In some embodiments, the weight percentage of the dopant ions is between 0.0001% and 1%.

[0007] In some embodiments, the alkali metal ion is Na + and K. + It contains at least one of the following.

[0008] In some embodiments, the alkaline earth metal ion is Mg 2+ and Ca 2+ It includes at least one of the following.

[0009] In some embodiments, the transition metal ion is Fe 2+ , Fe 3+ and Cu 2+ It includes at least one of the following.

[0010] In some embodiments, the Group IIIA ion is B 3+ , Al 3+ , Ga 3+ and In 3+ It includes at least one of the following.

[0011] In some embodiments, the acid ion is Ac - , PO2 3- , CO3 2- and NO3 - It includes at least one of the following.

[0012] In some embodiments, the halogen ion is F - , Cl - , Br - , I - and I3 - It includes at least one of the following.

[0013] In some embodiments, the precursor substrate comprises a material having the formula MX, where M comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion, and X comprises at least one of a halogen ion and a carboxylate ion.

[0014] This application is The present invention further provides a method for preparing a perovskite precursor material, the method comprising the steps of mixing and reacting raw materials for providing dopant ions and raw materials for synthesizing a precursor substrate in a first solvent, and performing a first crystallization process on the solution after the reaction, wherein the dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions.

[0015] In some embodiments, the mass percent of the dopant ions, as a percentage of the mass of the perovskite precursor material, is between 0.0001% and 3%.

[0016] In some embodiments, the weight percentage of the dopant ions is between 0.0001% and 1%.

[0017] In some embodiments, the precursor substrate comprises a material having the formula MX, where M comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion, and X comprises at least one of a halogen ion and a carboxylate ion.

[0018] In some embodiments, the precursor base material comprises a material having a chemical formula of MX, where M is at least one selected from an organic amine cation and a cesium ion, and X comprises at least one of a halogen ion and a carboxylate ion, and the reaction temperature for mixing and reacting the raw material for providing the dopant ion and the raw material for synthesizing the precursor base material in a first solvent is 0°C to 5°C.

[0019] In some embodiments, the first solvent is at least one selected from water, methanol, ethanol, propanol, and isopropyl alcohol.

[0020] In some embodiments, the precursor substrate comprises a material having a chemical formula of MX, wherein M is at least one selected from the group consisting of lithium ions, potassium ions, rubidium ions, lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions, and europium ions, and X comprises at least one of a halogen ion and a carboxylate ion. The reaction temperature for mixing and reacting the raw materials for providing the dopant ions and the raw materials for synthesizing the precursor substrate in a first solvent is 70°C to 90°C.

[0021] In some embodiments, the first solvent is at least one selected from water, methanol, ethanol, propanol, and isopropyl alcohol.

[0022] The present application further provides a perovskite precursor slurry comprising a second solvent, and further comprising the perovskite precursor material described above or a perovskite precursor material obtained by the method for preparing a perovskite precursor material described above.

[0023] The present application further provides a perovskite material comprising a perovskite substrate and dopant ions in the perovskite precursor material, wherein at least some of the dopant ions are located at grain boundaries of the perovskite substrate; the perovskite substrate comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, and a rubidium ion; the perovskite substrate further comprises at least one of a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and the perovskite substrate further comprises at least one of a halogen ion and a carboxylate ion.

[0024] This application is a step of mixing and reacting raw materials containing the perovskite precursor material or the perovskite precursor material prepared by the method for preparing a perovskite precursor material in a third solvent, and performing a second crystallization treatment on the solution after the reaction; The present invention further provides a method for preparing a perovskite material, wherein the perovskite precursor material comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, and a rubidium ion; the perovskite precursor material further comprises at least one of a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and the perovskite precursor material further comprises at least one of a halogen ion and a carboxylate ion.

[0025] The present application further provides a perovskite film comprising the perovskite material or a perovskite material prepared by the method for preparing a perovskite material.

[0026] The present application further provides a method for fabricating a perovskite film, comprising the steps of applying the perovskite precursor slurry and performing an annealing treatment.

[0027] The present application provides a semiconductor device comprising a first electrode, a perovskite layer, and a second electrode, which are stacked in order; the perovskite layer comprises the perovskite material described above, or the perovskite layer comprises a perovskite material obtained by the method for preparing a perovskite material described above, or the perovskite layer comprises the perovskite film described above, or The present invention further provides a perovskite solar cell, wherein the perovskite layer is formed by coating the perovskite precursor slurry and annealing it.

[0028] This application is forming a perovskite layer on a first electrode; forming a second electrode on the perovskite layer; The present invention further provides a method for fabricating a perovskite solar cell, wherein the perovskite layer comprises a perovskite material, the perovskite material comprising a perovskite substrate and dopant ions, the dopant ions comprising at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions, and at least some of the dopant ions are located at grain boundaries of the perovskite substrate.

[0029] The present application further provides an electrical device comprising the perovskite solar cell or a perovskite solar cell fabricated by the method for fabricating a perovskite solar cell. [Brief explanation of the drawings]

[0030] In order to more clearly explain the technical solution of the present application, the drawings used in the present application are briefly introduced below. The drawings in the following description are only some embodiments of the present application, and it is obvious that those skilled in the art can obtain other drawings based on the drawings without paying creative labor.

[0031] [Figure 1] FIG. 1 is a structural schematic diagram of an example of a perovskite solar cell.

[0032] To better depict and explain the embodiments and / or examples of the invention disclosed in this application, reference may be made to one or more drawings. Additional detail or examples for the purposes of illustrating the drawings should not be deemed to limit the scope of either the disclosed invention, the presently described embodiments and / or examples, or the best mode of the invention as currently understood. DETAILED DESCRIPTION OF THE INVENTION

[0033] The perovskite solar cell, its fabrication method, and electrical device of the present application will be described in more detail below in conjunction with specific examples. The present invention is not limited to the embodiments described herein, and may be embodied in many different forms. On the contrary, the purpose of providing these embodiments is to provide a more complete understanding of the present disclosure.

[0034] The details of one or more embodiments of the application are set forth in the drawings and description below. Other features, objects, and advantages of the application will become apparent from the description, drawings, and claims.

[0035] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art of the present invention. In this application, the terms used in the specification of the present invention are merely for the purpose of describing specific examples and are not intended to limit the present invention.

[0036] The "ranges" disclosed in this application are defined by lower and upper limits. A certain range is defined by selecting one lower limit and one upper limit, and the selected lower and upper limits define the boundaries of the particular range. Ranges defined in this manner may be inclusive or exclusive and may be arbitrarily combined, i.e., any lower limit may be combined with any upper limit to form a range. For example, if ranges of 60 to 120 and 80 to 110 are recited for a particular parameter, it is understood that ranges of 60 to 110 and 80 to 120 are also contemplated. Also, if minimum range values ​​of 1 and 2 are recited and maximum range values ​​of 3, 4, and 5 are recited, the ranges of 1 to 3, 1 to 4, 1 to 5, 2 to 3, 2 to 4, and 2 to 5 are all contemplated. In this application, unless otherwise specified, the numerical range "a to b" is meant as shorthand for any combination of real numbers between a and b, where a and b are both real numbers. For example, the numerical range "0 to 5" means that all real numbers between "0 and 5" are recited in this application, and "0 to 5" is merely a shorthand notation for combinations of these numbers. Also, expressing a parameter as an integer ≧2 is equivalent to disclosing that the parameter is, for example, the integers 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0037] All embodiments and optional embodiments in the present application can be combined with each other to form new technical solutions, unless otherwise stated.

[0038] All technical features and optional technical features of the present application can be combined with each other to form new technical solutions unless otherwise stated.

[0039] All steps in the present application can be performed in order or randomly, and are preferably performed in order, unless otherwise specified. For example, when the method includes steps (a) and (b), it means that the method may include steps (a) and (b) performed in order, or may include steps (b) and (a) performed in order. For example, when the method mentioned above may further include step (c), it means that step (c) may be added to the method in any order, for example, it means that the method may include steps (a), (b), and (c), or may include steps (a), (c), and (b), or may include steps (c), (a), and (b), etc.

[0040] The terms "comprise" and "include" used in this application refer to both open and closed forms unless otherwise specified. For example, the terms "comprise" and "include" can indicate that other elements not listed may also be included or may include, or that only the elements listed may be included or may include.

[0041] In this application, the term "or" is inclusive unless otherwise stated. For example, the sentence "A or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied by either A being true (or existing) and B being false (or not existing), or A being false (or not existing) and B being true (or existing), or A and B being both true (or existing).

[0042] Unless otherwise specified, in this application, the term "room temperature" generally refers to a temperature between 4°C and 30°C, and preferably refers to 25±5°C.

[0043] The present application provides a perovskite precursor, which includes a precursor base material and dopant ions including at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions.

[0044] In the perovskite precursor material of the present application, the addition of dopant ions can improve the performance of the precursor material, and when this perovskite precursor material is prepared as a perovskite material, it can passivate the grain boundaries of the perovskite substrate to a certain extent, and further improve the photoelectric conversion efficiency of perovskite solar cells.

[0045] In some embodiments, at least some of the dopant ions are incorporated into the crystal lattice of the precursor substrate. This can improve the doping uniformity of the dopant ions. When this perovskite precursor material is prepared as a perovskite material, the dopant ions are located at the grain boundaries of the perovskite substrate, further passivating the grain boundaries and further improving the photoelectric conversion efficiency of the perovskite solar cell. As will be understood, in the perovskite precursor material, some of the dopant ions may be located on the surface of the precursor substrate.

[0046] In some embodiments, the weight percent of the dopant ions, as a percentage of the weight of the perovskite precursor material, is between 0.0001% and 3%. Optionally, the weight percent of the dopant ions, as a percentage of the weight of the perovskite precursor material, is 0.0001%, 0.001%, 0.01%, 0.02%, 0.03%, 0.05%, 0.08%, 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, 1%, 1.2%, 1.5%, 1.8%, 2%, 2.2%, 2.5%, 2.8%, 3%, etc. Even more optionally, the weight percent of the dopant ions is between 0.0001% and 1%.

[0047] In some embodiments, the weight percent of the dopant ions is between 0.0001% and 0.5% by weight of the perovskite precursor material when the dopant ions are cations, and between 0.0001% and 3% by weight of the perovskite precursor material when the dopant ions are anions.

[0048] Alternatively, the type and content of dopant ions can be measured by inductively coupled plasma optical emission spectroscopy (ICP), ion chromatography (IC), etc. Specifically, cations can be measured by ICP and anions can be measured by IC. The distribution of dopant ions in the precursor material can be measured by an EDS (Electron Dispersion Spectroscopy) instrument.

[0049] In some embodiments, the alkali metal ion is Na + and K. + The alkaline earth metal ion contains at least one of Mg 2+ and Ca 2+ The transition metal ion contains at least one of Fe 2+ , Fe 3+ and Cu 2+ The group IIIA element ion includes at least one of B 3+ , Al 3+ , Ga 3+ and In 3+ The acid ion contains at least one of Ac - , PO2 3- , CO3 2- and NO3 - The halogen ion contains at least one of F - , Cl - , Br - , I - and I3 - It includes at least one of the following.

[0050] As will be appreciated, perovskite materials are typically prepared from halide precursors, and the chemical formula of the prepared perovskite material is ABX3 or A2CDX6, A is an inorganic or organic or organic-inorganic mixed cation, and contains at least one of an organic amine cation, a Cs cation, a K cation, a Rb cation and a Li cation, and the organic amine cation is (NR1R2R3R4) + , (R1R2N=CR3R4) + , (R1R2N-C(R5)=NR3R4) + or (R1R2N-C(NR5R6)=R3R4) + R1, R2, R3, R4, R5 and R6 are each independently selected from H, a substituted or unsubstituted C1-20 alkyl group or a substituted or unsubstituted aryl group; A is optionally a methylamine group (CH3NH3 + )(MA + ), formamidine group (HC(NH2)2 + )(FA + ), cesium ions (Cs + ) and rubidium (Rb + ), and more preferably, at least one of the methylamine group (CH3NH3 + ) or formamidine group (HC(NH2)2 + )

[0051] B is an inorganic or organic or mixed organic-inorganic cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium, and optionally the divalent metal ion Pb 2+ and Sn 2+ At least one of the following is true.

[0052] C is an inorganic or organic or mixed organic-inorganic cation, optionally a monovalent metal ion, Ag + And so on.

[0053] D is an inorganic, organic or mixed organic-inorganic cation, and optionally a trivalent metal ion, bismuth cation Bi 3+ , antimony cation Sb 3+ , indium cation In 3+ And so on.

[0054] X is an inorganic or organic or mixed organic-inorganic anion, and is optionally one or more of a halogen anion and a carboxylate anion, and is further optionally a bromide ion (Br - ) or iodine ion (I - )

[0055] Corresponding to the chemical formula ABX3 or A2CDX6 of the perovskite material, the perovskite precursor may be expressed as comprising at least one material of the chemical formula AX, BX, CX and DX, where A, B, C, D and X can be correspondingly selected from those listed above.

[0056] In some embodiments, the precursor substrate comprises a material having the formula MX, where M comprises at least one of an organic amine cation, cesium ion, lithium ion, potassium ion, rubidium ion, lead ion, tin ion, zinc ion, titanium ion, antimony ion, bismuth ion, nickel ion, iron ion, cobalt ion, silver ion, copper ion, gallium ion, germanium ion, magnesium ion, calcium ion, indium ion, aluminum ion, manganese ion, chromium ion, molybdenum ion, and europium ion, and X comprises at least one of a halogen ion and a carboxylic acid. As will be understood, when both the dopant ion and X contain a halogen ion, the halogen ion in the dopant ion and the halogen ion in X can be the same or different. Alternatively, the organic amine cation is a monovalent organic amine cation, the cesium ion is a monovalent cesium ion, the lithium ion is a monovalent lithium ion, the potassium ion is a monovalent potassium ion, the rubidium ion is a monovalent rubidium ion, the lead ion is a divalent lead ion, the tin ion is a divalent tin ion, the zinc ion is a divalent zinc ion, the titanium ion is a tetravalent titanium ion, the antimony ion is a trivalent antimony ion, the bismuth ion is a trivalent bismuth ion, the nickel ion is a divalent nickel ion, the iron ion is a divalent iron ion or a trivalent iron ion, the cobalt ion is a divalent cobalt ion or a trivalent cobalt ion, and the silver ion is a monovalent silver ion. ions, copper ions are divalent copper ions, gallium ions are trivalent gallium ions, germanium ions are divalent germanium ions or tetravalent germanium ions, magnesium ions are divalent magnesium ions, calcium ions are divalent calcium ions, indium ions are trivalent indium ions, aluminum ions are trivalent aluminum ions, manganese ions are divalent manganese ions or tetravalent manganese ions or hexavalent manganese ions or heptavalent manganese ions, chromium ions are trivalent chromium ions, molybdenum ions are trivalent molybdenum ions, and europium ions are divalent europium ions or trivalent europium ions.

[0057] The present application further provides a method for preparing a perovskite precursor material, the method comprising the steps of mixing and reacting raw materials for providing dopant ions and raw materials for synthesizing a precursor substrate in a first solvent, and performing a first crystallization process on the reacted solution, wherein the dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions.

[0058] In this method for preparing a perovskite precursor material, the raw materials for providing dopant ions and the raw materials for synthesizing the precursor substrate are mixed and reacted in a first solvent, followed by a first crystallization process to prepare the perovskite precursor in situ. This preparation method allows the dopant ions to be uniformly dispersed, effectively preventing dopant ion aggregation and avoiding performance limitations of the perovskite precursor caused by dopant ion aggregation, improving the performance of the perovskite precursor material and further improving the performance of the perovskite material and perovskite solar cell.

[0059] Furthermore, the raw materials for providing the dopant ions and the raw materials for synthesizing the precursor base material are mixed and reacted in the first solvent, and the introduction of the dopant ions is advantageous in that the perovskite precursor material crystallizes to form a perovskite precursor material with a more stable structure.

[0060] Furthermore, this preparation method allows the dopant ions to be incorporated into the crystal lattice of the precursor substrate, which can further improve the uniformity of the distribution of the dopant ions.

[0061] Alternatively, when the raw material for providing the dopant ions and the raw material for synthesizing the precursor substrate are mixed and reacted in the first solvent, the raw material for providing the dopant ions and the raw material for synthesizing the precursor substrate are simultaneously added to the first solvent and then mixed and reacted.

[0062] In some embodiments, the weight percentage of the dopant ions, as a percentage of the weight of the perovskite precursor material, is between 0.0001% and 3%, and optionally the weight percentage of the dopant ions is between 0.0001% and 1%. As will be appreciated, the weight percentage of the dopant ions, as a percentage of the weight of the perovskite precursor material, can be correspondingly selected from the weight percentages listed in the perovskite precursor material content above, and will not be described here.

[0063] In some embodiments, the precursor substrate comprises a material having the formula MX, where M comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion, and X comprises at least one of a halogen ion and a carboxylate ion.

[0064] In some embodiments, the precursor substrate comprises a material having a chemical formula of MX, where M is at least one selected from an organic amine cation and a cesium ion, and X is at least one selected from a halogen ion and a carboxylate ion. The reaction temperature for mixing and reacting the raw materials for providing the dopant ion and the raw materials for synthesizing the precursor substrate in a first solvent is 0°C to 5°C. Optionally, the reaction temperature may be, but is not limited to, 0°C, 1°C, 2°C, 3°C, 4°C, 5°C, etc. Optionally, the first solvent is at least one selected from water, methanol, ethanol, propanol, and isopropyl alcohol.

[0065] In some embodiments, the precursor substrate comprises a material having the formula MX, where M is at least one selected from an organic amine cation and a cesium ion, and X comprises at least one of a halogen ion and a carboxylate ion, and the product obtained by the first crystallization is dried at a temperature of 40°C to 100°C. Optionally, when drying the product obtained by the first crystallization, the drying temperature is 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, etc. Optionally, drying is performed in an oven.

[0066] In some other embodiments, the precursor substrate comprises a material having the formula MX, where M is at least one selected from the group consisting of lithium, potassium, rubidium, lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium ions, and X is at least one selected from the group consisting of a halogen ion and a carboxylate ion. The temperature at which the dopant ion-providing material and the precursor substrate-synthesizing material are mixed and reacted in a first solvent is between 70° C. and 90° C. Optionally, the reaction temperature may be, but is not limited to, 70° C., 72° C., 74° C., 75° C., 78° C., 80° C., 82° C., 84° C., 85° C., 88° C., or 90° C. Optionally, the first solvent is at least one selected from water, methanol, ethanol, propanol, and isopropyl alcohol.

[0067] The present application further provides a perovskite precursor slurry, which includes a second solvent and further includes the perovskite precursor material or a perovskite precursor material obtained by the method for preparing a perovskite precursor material. Optionally, the second solvent includes at least one of N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP).

[0068] As will be appreciated, when fabricating a perovskite solar cell, this perovskite precursor slurry can be coated and annealed to form a perovskite layer.

[0069] The present application further provides a perovskite material. The perovskite material includes a perovskite substrate and dopant ions in the perovskite precursor material. The dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halide ions, and at least some of the dopant ions are located at grain boundaries of the perovskite substrate. The perovskite substrate includes at least one of organic amine cations, cesium ions, lithium ions, potassium ions, and rubidium ions. The perovskite substrate further includes at least one of lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions, and europium ions. The perovskite substrate further includes at least one of halide ions and carboxylate ions. In this perovskite material, dopant ions play a role in passivating the grain boundaries, further enabling perovskite solar cells to have higher photoelectric conversion efficiency.

[0070] In some embodiments, at least some of the dopant ions in the perovskite material are located on the surface of the perovskite substrate, where the dopant ions can repair surface defects in the perovskite material and further improve the photoelectric conversion efficiency of the perovskite solar cell.

[0071] Optionally, in the perovskite material, the alkali metal ions are Na + and K. + and the alkaline earth metal ion is Fe. 2+ , Fe3+ and Cu 2+ and the group IIIA element ion is B 3+ , Al 3+ , Ga 3+ and In 3+ and the acid ion is Ac - , PO2 3- , CO3 2- and NO3 - and the halogen ion is F. - , Cl - , Br - , I - and I3 - It includes at least one of the following.

[0072] As will be appreciated, the chemical formula of the perovskite substrate is ABX3 or A2CDX6, A is an inorganic or organic or organic-inorganic mixed cation, and contains at least one of an organic amine cation, a Cs cation, a K cation, a Rb cation and a Li cation, and the organic amine cation is (NR1R2R3R4) + , (R1R2N=CR3R4) + , (R1R2N-C(R5)=NR3R4) + or (R1R2N-C(NR5R6)=R3R4) + R1, R2, R3, R4, R5 and R6 are each independently selected from H, a substituted or unsubstituted C1-20 alkyl group or a substituted or unsubstituted aryl group; A is optionally a methylamine group (CH3NH3 + )(MA + ), formamidine group (HC(NH2)2 + )(FA + ), cesium ions (Cs + ) and rubidium (Rb + ), and more preferably, at least one of the methylamine group (CH3NH3 + ) or formamidine group (HC(NH2)2 + )

[0073] B is an inorganic or organic or mixed organic-inorganic cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium, and optionally the divalent metal ion Pb 2+ and Sn 2+ At least one of the following is true.

[0074] C is an inorganic or organic or mixed organic-inorganic cation, optionally a monovalent metal ion, Ag + And so on.

[0075] D is an inorganic, organic or mixed organic-inorganic cation, and optionally a trivalent metal ion, bismuth cation Bi 3+ , antimony cation Sb 3+ , indium cation In 3+ And so on.

[0076] X is an inorganic or organic or mixed organic-inorganic anion, and is optionally one or more of a halogen anion and a carboxylate anion, and is further optionally a bromide ion (Br - ) or iodine ion (I - )

[0077] The present application also provides a method for preparing a perovskite material, comprising the steps of mixing and reacting raw materials containing the perovskite precursor or a perovskite precursor prepared by the method for preparing a perovskite precursor in a third solvent, and performing a second crystallization process on the reacted solution, wherein the perovskite precursor contains at least one of an organic amine cation, cesium ion, lithium ion, potassium ion, and rubidium ion, the perovskite precursor further contains at least one of lead ion, tin ion, zinc ion, titanium ion, antimony ion, bismuth ion, nickel ion, iron ion, cobalt ion, silver ion, copper ion, gallium ion, germanium ion, magnesium ion, calcium ion, indium ion, aluminum ion, manganese ion, chromium ion, molybdenum ion, and europium ion, and the perovskite precursor further contains at least one of a halogen ion and a carboxylate ion.

[0078] In a method for preparing a perovskite material, raw materials containing the perovskite precursor or a perovskite precursor prepared by the perovskite precursor preparation method are mixed and reacted in a third solvent, followed by a second crystallization process, thereby preparing the perovskite material in situ and incorporating dopant ions into the grain boundaries of the perovskite substrate. This preparation method also allows for uniform dispersion of the dopant ions, effectively avoiding dopant ion aggregation, avoiding performance limitations of the perovskite material due to dopant ion aggregation, and ultimately improving the performance of perovskite solar cells. Furthermore, the introduction of dopant ions by mixing and reacting raw materials containing the perovskite precursor or a perovskite precursor prepared by the perovskite precursor preparation method in a third solvent is beneficial for crystallization of the perovskite material and forming a perovskite material with a more stable structure.

[0079] In the method for preparing the perovskite material, the perovskite precursor material is selected to obtain the perovskite material with the chemical formula ABX3 or A2CDX6.

[0080] Alternatively, when the perovskite precursor material or a raw material containing the perovskite precursor material prepared by the method for preparing a perovskite precursor material is mixed and reacted in a third solvent, the perovskite precursor material or a raw material containing the perovskite precursor material prepared by the method for preparing a perovskite precursor material is simultaneously added to the third solvent and then mixed and reacted.

[0081] Optionally, the third solvent comprises at least one of N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP).

[0082] Optionally, in this application, crystallization can be performed by anti-solvent crystallization, temperature-reducing crystallization, etc. Optionally, the first crystallization treatment can be performed by anti-solvent crystallization, temperature-reducing crystallization, etc. Optionally, the second crystallization treatment can be performed by anti-solvent crystallization, temperature-reducing crystallization, etc.

[0083] The present application further provides a perovskite film, which comprises the perovskite material described above or a perovskite material prepared by the method for preparing a perovskite material described above.

[0084] The present application further provides a method for preparing a perovskite film, which includes the steps of applying the perovskite precursor slurry and performing an annealing treatment.

[0085] The present application further provides a perovskite solar cell, comprising a first electrode, a perovskite layer, and a second electrode, which are stacked in this order, wherein the perovskite layer comprises the perovskite material, or the perovskite layer comprises a perovskite material obtained by the method for preparing a perovskite material, or the perovskite layer comprises the perovskite film, or the perovskite layer is formed by coating and annealing the perovskite precursor slurry.

[0086] In some embodiments thereof, the device further comprises an electron transport layer located between the perovskite layer and the second electrode. Optionally, the material of the electron transport layer comprises fullerenes and derivatives thereof.

[0087] Optionally, the first electrode is a transparent conductive glass or metal electrode. The second electrode is a transparent conductive glass or metal electrode. Further optionally, the first electrode and the second electrode are different.

[0088] In some embodiments, the first electrode is typically a transparent conductive glass. Optionally, the first electrode is at least one selected from fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), and indium tungsten oxide (IWO). Optionally, the thickness of the first electrode layer is 100 nm to 1000 nm, and optionally 300 nm to 800 nm.

[0089] In some embodiments, the second electrode is typically a metal electrode. Optionally, the second electrode is at least one selected from Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and alloys thereof. Optionally, the thickness of the second electrode is 20 nm to 200 nm, optionally 60 nm to 100 nm, and further optionally 70 nm to 90 nm. As will be appreciated, the perovskite layer is a light absorbing layer and is composed of a perovskite material.

[0090] In some embodiments, the bandgap of the perovskite layer is between 1.20 eV and 2.30 eV.

[0091] In some embodiments, the thickness of the perovskite layer is between 200 nm and 800 nm, and optionally between 400 nm and 600 nm, and more preferably between 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, etc.

[0092] In some embodiments, the perovskite solar cell further comprises a hole transport layer located between the first electrode and the perovskite layer. Optionally, the hole transport layer is selected from the group consisting of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly-3-hexylthiophene (P3HT), triptycene-based triphenylamine (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-aniline)carbazole-spirobifluorene (CzPAF-SBF), poly(3,4-ethylenedioxythiophene):poly(styrenesulfo) (PEDOT:PSS), polythiophene, nickel oxide (NiO x ), molybdenum oxide (MoO3), cuprous iodide (CuI), cuprous oxide (CuO), and at least one of their derivatives and doped or passivated materials.

[0093] In some embodiments, the perovskite solar cell further comprises a first passivation layer located between the perovskite layer and the hole transport layer. Optionally, the material of the first passivation layer comprises at least one of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and Me-4PACz (CAS No. 2747959-96-0).

[0094] In some embodiments, the perovskite solar cell further comprises a second passivation layer and / or a buffer layer located between the electron transport layer and the second electrode. Optionally, the material of the second passivation layer or buffer layer is bathocuproine (BCP).

[0095] As will be understood, perovskite solar cells include nip-structure perovskite solar cells and pin-structure perovskite solar cells. Regarding nip-structure perovskite solar cells, the nip-structure perovskite solar cell includes a first electrode and, stacked in this order on the first electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a second electrode. Regarding pin-structure perovskite solar cells, the pin-structure perovskite solar cell includes a first electrode and, stacked in this order on an anode, a hole transport layer, a perovskite layer, an electron transport layer, and a second electrode. In this application, depending on the selection of the first electrode and second electrode materials, corresponding nip-structure perovskite solar cells and pin-structure perovskite solar cells can be obtained.

[0096] See Figure 1, which shows the structure of a perovskite solar cell according to one embodiment of the present application. The first electrode is made of FTO, and a hole transport layer, a passivation layer, a perovskite layer, an electron transport layer, a passivation layer or buffer layer, and a metal electrode are sequentially stacked on the first electrode. A glass base is provided on the surface of the FTO away from the perovskite layer.

[0097] The present application further provides a method for fabricating a perovskite solar cell, the method comprising the steps of fabricating a perovskite layer on a first electrode and fabricating a second electrode on the perovskite layer, the perovskite layer comprising a perovskite material, the perovskite material comprising a perovskite substrate and dopant ions, the dopant ions comprising at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions, and at least some of the dopant ions are located at grain boundaries of the perovskite substrate.

[0098] Optionally, a perovskite layer is formed by spin coating and annealing. Optionally, an electron transport layer is formed by spin coating and annealing. Optionally, a second electrode is formed by evaporation.

[0099] The present application further provides an electric device, which includes the perovskite solar cell. Optionally, the electric device may be, for example, an electric device in the fields of communications, transportation, industrial agriculture, lighting, etc. The electric device may include, for example, satellites, communications equipment, signal lights, lighthouses, radio telephone booths, monitoring equipment in oil drilling, power supply systems, camping lights, electric vehicles, electronic device chargers, etc.

[0100] Example Examples of the present application are described below. The examples described below are merely illustrative and are intended to aid in the interpretation of the present application and should not be construed as limitations on the present application. If specific techniques or conditions are not specified in the examples, they will be carried out in accordance with the techniques or conditions described in the literature in the field or in the product instructions. Reagents or instruments used without a specified manufacturer are all common products that can be purchased commercially.

[0101] In the examples and comparative examples, the photoelectric conversion efficiency of perovskite solar cells was tested using standard simulated sunlight (AM1.5G, 100mW / cm 2 The purpose of this study is to test the photoelectric conversion efficiency of perovskite solar cells under irradiation with UV light.

[0102] Example 1 (1) The method for preparing the perovskite precursor according to this example is as follows.

[0103] At 0°C to 5°C, formamidine acetate was added to 20 mL of absolute ethanol and stirred for 0.5 hours. Hypophosphorous acid and hydroiodic acid were then added and the mixture was allowed to react for 2 hours. After the reaction was complete, the solvent was removed by rotary evaporation. Absolute ethanol was added to dissolve the product, and the resulting solution was added dropwise to ether to precipitate the doped formamidine iodide (FAI), which was then dried in an oven at 60°C. In the perovskite precursor obtained in this example, the precursor base material was formamidine iodide, and the dopant ion was PO2. 2- is.

[0104] (2) The method for preparing the perovskite slurry according to this example is as follows.

[0105] 450 mg of lead iodide, 120 mg of formamidine iodide (FAI) obtained in (1), 15 mg of chloromethylamine, 8 mg of methylamine iodide, and 6 mg of cesium iodide were weighed and dissolved in a mixed solution of 0.8 mL of DMF and 0.2 mL of DMSO, stirred for 3 hours, and filtered through a 0.22 μm organic filter membrane to obtain a perovskite slurry.

[0106] (3) The method for producing the perovskite solar cell according to this example is as follows.

[0107] S101: Take one set of FTO conductive glass measuring 2cm x 2cm, etch away 0.5cm areas on both opposing sides with a laser marker, clean with a cleaning agent, and then ultrasonically treat with deionized water, ethanol, and acetone for 10 minutes, and dry with N2 after the ultrasonic treatment is complete.

[0108] S102: Prepare a sheet of FTO conductive glass and fabricate a nickel oxide layer on it using magnetron sputtering.

[0109] S103: Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) was dissolved in chlorobenzene at a concentration of 1 mg / mL, stirred, and then filtered through a 0.45 μm filter membrane. 50 μL of the solution was dropped onto the nickel oxide layer, spin-coated at 4000 rpm, and annealed on a heating platform at 100°C for 10 minutes to obtain a passivation layer.

[0110] S104: The perovskite slurry obtained in (2) is coated onto the passivation layer by the coating method, spin-coated at a rate of 3000 rpm, annealed at 120°C for 30 minutes, and cooled to room temperature to form a perovskite layer with a thickness of 500 nm.

[0111] S105: The glass obtained in S104 is placed in a deposition facility, and 25 nm of C60, 5 nm of BCP, and 100 nm of Cu are deposited in this order to obtain a perovskite solar cell.

[0112] Example 2 The difference between this example and Example 1 is that formamidine acetate is replaced with methylamine in the preparation method of the perovskite precursor. In the perovskite precursor obtained in this example, the precursor base material is methylamine iodide, and the dopant ion is PO2 2- is.

[0113] Example 3 The method for preparing the perovskite precursor according to this example is as follows.

[0114] Cesium carbonate and calcium carbonate were added to 20 mL of water at 0°C to 5°C, stirred for 10 minutes, hydrochloric acid was added dropwise, and the mixture was allowed to react for 2 hours. After the reaction was complete, the solvent was removed by rotary evaporation, and then anhydrous ethanol was added to dissolve the product. The resulting solution was added dropwise to ether to precipitate the doped cesium chloride, which was then dried in an oven at 60°C. In the perovskite precursor obtained in this example, the precursor base material was cesium chloride, and the dopant ion was Ca. 2+ is.

[0115] Example 4 The difference between this example and Example 3 is that calcium carbonate is replaced with iron hydroxide in the preparation method of the perovskite precursor. In the perovskite precursor obtained in this example, the precursor base material is cesium chloride, and the dopant ion is Fe 3+ is.

[0116] Example 5 The difference between this example and Example 1 is that in the preparation method of the perovskite precursor, formamidine acetate is replaced with methylamine and hydroiodic acid is replaced with hydrochloric acid. In the perovskite precursor obtained in this example, the precursor base material is chloromethylamine and the dopant ion is PO2 2- is.

[0117] Examples 6 to 13 The difference between Examples 6 to 13 and Example 1 is that the dopant content of the dopant ions is different.

[0118] Examples 14 to 20 The difference between Examples 14 to 20 and Example 3 is that the dopant content of the dopant ions is different.

[0119] Comparative Example 1 The difference between this comparative example and Example 1 is that hypophosphorous acid is not added in the method for preparing the perovskite precursor.

[0120] Comparative Example 2 The difference between this comparative example and Example 1 is that the mixing reaction is carried out at 25°C.

[0121] Comparative Example 3 The difference between this comparative example and Example 1 is that the drying temperature is 120°C.

[0122] Table 1 shows the precursor base, dopant ion, dopant ion content, and photoelectric conversion efficiency of the perovskite solar cells in Examples 1 to 21 and Comparative Examples 1 to 3.

[0123] [Table 1]

[0124] In Table 1, the dopant content represents the mass percentage of the dopant ions relative to the mass of the perovskite precursor material.

[0125] Example 22 (1) The method for preparing the perovskite precursor according to this example is as follows.

[0126] At 80°C, KI, lead acetate, and FeI2 (a raw material containing dopant ions) are added to deionized water, and after the mixing reaction, the temperature is lowered and crystallization is carried out. In the resulting perovskite precursor, the precursor base material is PbI2, and the dopant ions are Fe 2+ is.

[0127] (2) The method for preparing the perovskite slurry according to this example is as follows.

[0128] 4.61 g of the perovskite precursor obtained in (1), 2.6 g of CsI, and 1.72 g of FAI were dissolved in a DMF / NMP (4 / 1, v / v) solvent and mixed to obtain a perovskite slurry.

[0129] (3) The method for producing the perovskite solar cell according to this example is as follows.

[0130] S101: Take one set of FTO conductive glass measuring 2cm x 2cm, etch away 0.5cm areas on both opposing sides with a laser marker, clean with a cleaning agent, then ultrasonically treat with deionized water, ethanol, and acetone for 10 minutes, and dry with N2 after the ultrasonic treatment is complete.

[0131] S102: Prepare a sheet of FTO conductive glass and fabricate a nickel oxide layer on it using magnetron sputtering.

[0132] S103: Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) was dissolved in chlorobenzene at a concentration of 1 mg / mL, stirred, and then filtered through a 0.45 μm filter membrane. 50 μL of the solution was dropped onto the nickel oxide layer, spin-coated at 4000 rpm, and annealed on a heating platform at 100°C for 10 minutes to obtain a passivation layer.

[0133] S104: The perovskite slurry obtained in (2) is coated onto the passivation layer by the coating method, spin-coated at a rate of 3000 rpm, annealed at 120°C for 30 minutes, and cooled to room temperature to form a perovskite layer with a thickness of 500 nm.

[0134] S105: The glass obtained in S104 is placed in a deposition facility, and 25 nm of C60, 5 nm of BCP, and 100 nm of Cu are deposited in this order to obtain a perovskite solar cell.

[0135] Examples 23 to 33 The differences between Examples 23 to 33 and Example 22 are the precursor base material, dopant ion, and dopant content. The specific differences are as shown in Table 2.

[0136] Comparative Example 4 The difference between this comparative example and Example 22 is that in the preparation method of the perovskite slurry, PbI2 is undoped PbI2, and FeI2 is added to the mixed solution.

[0137] Comparative Example 5 The difference between this comparative example and Example 22 is that FeI2 is not added.

[0138] Comparative Example 6 The difference between this comparative example and Example 22 is that in the preparation method of the perovskite slurry, the PbBr2 is undoped PbBr2, and FeI2 is added to the mixed solution.

[0139] In Examples 22 to 33 and Comparative Examples 4 to 6, the precursor base, dopant ions, dopant ion contents, and photoelectric conversion efficiencies of the perovskite solar cells are as shown in Table 2.

[0140] [Table 2]

[0141] In Table 2, the dopant content represents the weight percent of the dopant ions relative to the weight of the perovskite precursor material.

[0142] As can be seen from Tables 1 and 2, the cells fabricated with the doped perovskite precursors have higher photoelectric conversion efficiencies.

[0143] The present application is not limited to the above-described embodiments. The above-described embodiments are merely examples, and any embodiment that has substantially the same configuration as the technical idea and achieves the same effects within the scope of the technical solution of the present application is included within the technical scope of the present application. Furthermore, various modifications that a person skilled in the art can make to the embodiments without departing from the spirit of the present application, and other forms constructed by combining some of the components of the embodiments, are also included within the scope of the present application.

Claims

1. 1. A perovskite precursor material comprising: a precursor base material; and dopant ions comprising at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions.

2. the mass percent of the dopant ions, as a percentage of the mass of the perovskite precursor material, is between 0.0001% and 3%; 2. The perovskite precursor material of claim 1, wherein optionally the weight percentage of the dopant ions is between 0.0001% and 1%.

3. The dopant ions are (1) The alkali metal ion is Na ＋ and K. ＋ and (2) The alkaline earth metal ion is Mg ２＋ and Ca ２＋ and (3) The transition metal ion is Fe ２＋ , Fe ３＋ and Cu ２＋ and (4) The Group IIIA element ion is B ３＋ , Al ３＋ , Ga ３＋ and In ３＋ and (5) The acid ion is Ac － , P.O. ２ ３－ , CO ３ ２－ and NO ３ － and (6) The halogen ion is F － , Cl － ,Br － , I － and I ３ － 3. The perovskite precursor material according to any one of claims 1 to 2, characterized in that it comprises at least one of the following characteristics:

4. 4. The perovskite precursor material of claim 1, wherein the precursor substrate comprises a material having a chemical formula of MX, wherein M comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, a rubidium ion, a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion, and wherein X comprises at least one of a halogen ion and a carboxylate ion.

5. 1. A method for preparing a perovskite precursor material, comprising the steps of: mixing and reacting a raw material for providing dopant ions with a raw material for synthesizing a precursor base in a first solvent; and performing a first crystallization process on the solution after the reaction, wherein the dopant ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions.

6. the mass percent of the dopant ions, as a percentage of the mass of the perovskite precursor material, is between 0.0001% and 3%; 6. The method for preparing a perovskite precursor material according to claim 5, wherein optionally the mass percentage of the dopant ions is between 0.0001% and 1%.

7. 7. The method of claim 5, wherein the precursor substrate comprises a material having a chemical formula of MX, wherein M comprises at least one of an organic amine cation, cesium ion, lithium ion, potassium ion, rubidium ion, lead ion, tin ion, zinc ion, titanium ion, antimony ion, bismuth ion, nickel ion, iron ion, cobalt ion, silver ion, copper ion, gallium ion, germanium ion, magnesium ion, calcium ion, indium ion, aluminum ion, manganese ion, chromium ion, molybdenum ion, and europium ion, and X comprises at least one of a halogen ion and a carboxylate ion.

8. the precursor substrate comprises a material having a chemical formula of MX, wherein M is at least one selected from an organic amine cation and a cesium ion, and X is at least one selected from a halogen ion and a carboxylate ion; a reaction temperature for mixing and reacting a raw material for providing the dopant ion and a raw material for synthesizing the precursor substrate in a first solvent is 0°C to 5°C; 7. The method for preparing a perovskite precursor according to claim 5, wherein the first solvent is optionally at least one selected from the group consisting of water, methanol, ethanol, propanol, and isopropyl alcohol.

9. the precursor substrate comprises a material having a chemical formula of MX, wherein M is at least one selected from the group consisting of lithium ions, potassium ions, rubidium ions, lead ions, tin ions, zinc ions, titanium ions, antimony ions, bismuth ions, nickel ions, iron ions, cobalt ions, silver ions, copper ions, gallium ions, germanium ions, magnesium ions, calcium ions, indium ions, aluminum ions, manganese ions, chromium ions, molybdenum ions, and europium ions, and X is at least one selected from the group consisting of halogen ions and carboxylate ions; the reaction temperature for mixing and reacting the raw materials for providing the dopant ions and the raw materials for synthesizing the precursor substrate in a first solvent is 70°C to 90°C; 7. The method for preparing a perovskite precursor material according to claim 5, wherein the first solvent is optionally at least one selected from the group consisting of water, methanol, ethanol, propanol, and isopropyl alcohol.

10. 10. A perovskite precursor slurry comprising a second solvent, and further comprising the perovskite precursor material according to any one of claims 1 to 4 or the perovskite precursor material obtainable by the preparation method according to any one of claims 5 to 9.

11. 5. A perovskite material comprising: a perovskite base material; and dopant ions in the perovskite precursor material according to any one of claims 1 to 4, wherein at least some of the dopant ions are located at grain boundaries of the perovskite base material; the perovskite base material comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, and a rubidium ion; the perovskite base material further comprises at least one of a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and the perovskite base material further comprises at least one of a halogen ion and a carboxylate ion.

12. a step of mixing and reacting raw materials containing the perovskite precursor material according to any one of claims 1 to 4 or the perovskite precursor material prepared by the preparation method according to claims 5 to 9 in a third solvent, and performing a second crystallization treatment on the solution after the reaction; the perovskite precursor material comprises at least one of an organic amine cation, a cesium ion, a lithium ion, a potassium ion, and a rubidium ion; the perovskite precursor material further comprises at least one of a lead ion, a tin ion, a zinc ion, a titanium ion, an antimony ion, a bismuth ion, a nickel ion, an iron ion, a cobalt ion, a silver ion, a copper ion, a gallium ion, a germanium ion, a magnesium ion, a calcium ion, an indium ion, an aluminum ion, a manganese ion, a chromium ion, a molybdenum ion, and a europium ion; and the perovskite precursor material further comprises at least one of a halogen ion and a carboxylate ion.

13. 13. A perovskite film comprising the perovskite material of claim 11 or the perovskite material prepared by the preparation method of claim 12.

14. 11. A method for fabricating a perovskite film, comprising the steps of applying the perovskite precursor slurry of claim 10 and annealing.

15. a first electrode, a perovskite layer, and a second electrode, which are stacked in this order; The perovskite layer comprises a perovskite material according to claim 11; or The perovskite layer comprises a perovskite material obtained by the preparation method of claim 12, or The perovskite layer comprises a perovskite film according to claim 13; or 11. A perovskite solar cell, wherein the perovskite layer is formed by applying the perovskite precursor slurry according to claim 10 and annealing it.

16. fabricating a perovskite layer on a first electrode; forming a second electrode on the perovskite layer; the perovskite layer comprises a perovskite material, the perovskite material comprising a perovskite substrate and dopant ions, the dopant ions comprising at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, Group IIIA element ions, acid ions, and halogen ions, and at least some of the dopant ions are located at grain boundaries of the perovskite substrate.

17. 17. An electrical device comprising a perovskite solar cell according to claim 15 or a perovskite solar cell fabricated by the fabrication method according to claim 16.

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