Slot die gas distributor for photovoltaic manufacturing.

Abstract

The present application discloses a slot die type gas distribution device for photovoltaic manufacturing, which includes a first gas distribution device (105) at the inlet (104) of a process chamber and a second gas distribution device (13) at the outlet (11) of the process chamber, the first gas distribution device (105) and the inlet (104) of the process chamber are connected via a first communication device (9) having a flat rectangular prism shape, and the second gas distribution device (13) and the outlet (11) of the process chamber are connected via a third communication device (12) having a flat rectangular prism shape, which effectively improves the uniformity of gas distribution in the process chamber.

Description

[Technical Field]

[0001] FIELD OF THE INVENTION This application relates to the field of photovoltaic thin film manufacturing, and more particularly to slot die gas distribution devices for photovoltaic manufacturing. [Background technology]

[0002] In the photovoltaic manufacturing process, there are several key process steps involving gas distribution and high temperature heating to passivate or form several layers. A general schematic of such a process is shown in Figure 1. These semi-finished solar devices (including the substrate and the stack of several photovoltaic layers: top and bottom layers) processed here can be silicon-based or thin-film photovoltaic technology. Note that the gases referred to here can be reactive gases or gas mixtures (reactive and carrier gases). For Si-PV, H2S (reactive gas) is used to sulfurize / passivate the n-type Si surface and increase the carrier lifetime at approximately 600 °C. Alternatively, H2 (reactive gas) and N2 (carrier gas) are used to hydrogenate / passivate the SiOx:Al2O3 contacts of p-type or n-type Si-PV to improve the charge carrier lifetime at approximately 400 °C. Alternatively, B2H6 and PH3 (both reactive gases) are used in an LPCVD (low-pressure chemical vapor deposition) process to dope the n- or p-Si layer of a TOPCon cell. For thin-film PV, passivating CdTe grain boundaries with H2Se, Cl2, and HCl gases at 400–450 °C can reduce defects and improve power conversion efficiency. Alternatively, the CIGS absorber layer may be sulfurized / selenized / passivated using H2S / H2Se at 300-400°C during post-deposition treatment (PDT). Alternatively, the CIGS precursor layer may be sulfurized / selenized using H2S or H2Se at 400-600°C during rapid thermal processing (RTP) to form the CIGS absorber. These gas-based processes, typically performed under high-temperature heating conditions, are performed in a very limited-size process chamber to minimize heat and the required gas volume, thereby saving energy and other costs. Such laterally flat process boxes make it difficult to achieve uniform gas distribution. In large process boxes for mass production, introducing gas into the chamber is likely to cause local concentration gradients. Furthermore, although the gas is preheated to 100-150°C before entering the chamber, there is still a temperature difference, e.g., 400-600°C, between the gas and the continuously heated process chamber. This also leads to local temperature gradients within the process box.Because the reaction kinetics of the processes (such as sulfurization, selenization, chlorination, hydrogenation, and boron or phosphorus doping) are strongly influenced by the concentration and temperature of the reactants (in this case, the reactant gases), precise control of uniform gas distribution within the process box is crucial to ensure process repeatability and uniformity, and good PV device performance for mass production.

[0003] However, in practice, the chemical reactions in the top layer (see Figure 1) can be very complex and rapid in the above process. Therefore, improper process box design can lead to uneven distribution of gases (reactant gases or a mixture of reactant gases and carrier gases) and gas temperature, which can lead to uneven surface morphology / roughness, static or photoelectric properties of the final photovoltaic device. An example of a selenization / sulfurization process box used in some photovoltaic manufacturing processes is shown in Figure 2, which demonstrates a direct correlation between improper standard process box design and uneven gas distribution within the process box. In addition to the selenization / sulfurization process, improper process box design can also lead to uneven gas distribution for chlorination, hydrogenation, boron or phosphorus doping, and other processes in photovoltaic manufacturing.

[0004] FIG. 2 shows the standard design of a conventional selenization / sulfurization process box 16. This type of process box 16 typically consists of a main frame (made of a high-temperature-resistant material) with one fixed bottom plate and one loose cover plate (gravity cover mechanism). Gas passes through the substrate 18 (the top photovoltaic layer stack) and reacts with its surface. The cover plate 19 and bottom plate 17 are both made of infrared-transmitting or infrared-emitting materials. Heating of this selenization / sulfurization process box 16 is achieved by heat dissipation on both sides of the cover plate 19 and bottom plate 17. Because the bottom plate 17 is fixed but the cover plate 19 is loose, when the process chamber 20 is filled with gas, the gas may exit through the guide side of the top short edge (the gap between the process box frame and the cover plate 19), which is represented as the top gas outlet. In this embodiment, gas inlets / outlets are designed on both guide sides of the two long edges of the frame. In practice, there are two methods: 1) Gas is filled into the process chamber 20 through the gas inlet on the left side and discharged through the gas outlet on the right side. 2) Gas is filled into the process chamber 20 through the gas inlets on the left and right sides, and then, due to overfilling of the chamber 20, the leading edge of the top short side becomes the gas outlet. In the case of such a narrow gap of the process chamber (height-width / length-ratio exceeds a certain value), it is not easy to distribute the gas uniformly therein, since the pressure drop along the process chamber is abrupt.

[0005] A typical left-side inlet design for gas distribution in a conventional selenization / sulfurization process box is shown in Figure 3. The arrows in the figure indicate the direction of gas flow within the passage before entering the process chamber 20. The gas is first introduced into the intake duct inlet 1 and then passes through the intake duct 2. The gas flow is further distributed along the gas manifold 3, enters multiple tubes 4, and finally exits the left-side inlet through orifice 5 into the process chamber 20. The typical intake duct inlet 1 is located on the same horizontal plane as the intake duct 2 and the gas manifold 3. Note that the rows of gas orifices 5 on the two long edge guide sides are not symmetrically arranged. After exiting the left-side inlet, the gas enters the process chamber 20 and reacts with the photovoltaic layer stack on the substrate 18.

[0006] The size of the gas outlet portion is designed to have a mirror image relationship with the gas inlet portion.

[0007] Figure 4(a) shows the gas flow lines in the process chamber 20 based on a numerical simulation. For comparison, Figure 4(b) shows an optical scanning photograph of the top layer of the associated photovoltaic layer stack after selenization / sulfurization using the same process conditions. In the simulation setup, a constant gas flow rate is applied to the process box, with 60% coming from the left inlet and 40% coming from the right inlet. Therefore, the top of the process box is set as the gas outlet, and the remaining boundaries are set as normal walls. All of these should reflect actual selenization / sulfurization production conditions to some extent. The photovoltaic panel is highlighted within the dotted box in Figure 4(a). Regarding the gas flow line distribution shown here, many "finger"-like gas jets (bright areas) can be seen emanating from the leading edges of the two long sides. Interestingly, many of these are strongly related to the position of the gas orifice 5. Some of the gas jets form large vortices. Finally, the gas flow follows a sinusoidal line (located in the center) toward the gas outlet at the top short leading edge. Comparing Figure 4(a) and Figure 4(b) based on the scanning photographs, we find a strong correlation between the simulated gas flow and the effects of selenization / sulfurization on the surface of the photovoltaic layer. Thus, our simulation can be validated in some way. We speculate that the dark areas of the photovoltaic layer (Figure 4(b)) represent high surface roughness, while the lighter areas (finger-like gas jets) represent low roughness because a smooth surface reflects more light. The process chamber 20 is typically preheated by an IR emitter before gas injection. Before entering the process chamber, the typical "cold" temperature of the gas is 100-150°C. Therefore, uneven injection of cooler gas may affect the top layer of the associated photovoltaic layer, resulting in the presence of locally small crystal grains on the layer surface from the reduced thermal energy during the selenization growth process. This means that under optical scanning, the surface of the top layer of the associated photovoltaic layer stack can appear smoother and brighter within the gas injection area (see Figure 4) in a standard process box. Also, darker regions indicate higher temperatures, which can create more defects in parts of the device, leading to lower power conversion efficiency.

[0008] Uneven gas distribution, such as fingers, vortices, etc., not only affects the performance of the photovoltaic device, but also the optical appearance of the final photovoltaic product, making them unsuitable for BIPV facade applications. These panels have to be discarded, reducing production and increasing product costs / prices.

[0009] Therefore, there is a need to improve the gas distribution in the associated process box in order to obtain better electrical and aesthetic properties of the photovoltaic module.

[0010] In the prior art, methods have been designed to solve the problem of uneven gas distribution in process boxes by using a transport pipe 4 with a large diameter or expanding orifice. For comparison, Figures 5a), 5b), and 5c show the standard design and two modified designs of the intake section of a process box, respectively. As shown in Figures 5b) and 5c, the pipe 4 is composed of two parts. The left half uses the same piping design as the standard design (Figures 3b) and 5b), while the right half uses a "bowl"-shaped hole 10 extension, which expands the gas injection from the orifice 5 to the process chamber 20. The tubes in Figures 5b) and 5c have different diameters.

[0011] It should be noted that the exhaust section of the process box is designed to be in an inverted, mirroring relationship with the intake section of the process box.

[0012] Figure 6 shows the gas flow lines for the two improved designs shown in Figures 5b and 5c, where the gas is injected from the inlet on the left and leaves the region through the outlet on the right. For the simulation setup, the top and remaining boundaries of the process box are set as normal walls, i.e., without a gas outlet. The remaining boundary conditions remain the same as in Figure 4. On the right side, the gas flow lines are seen to be more parallel toward the gas outlet on the right. The modified designs appear to have improved the gas distribution within the process box to some extent. However, because "finger"-like jets and vortex flows of gas still exist, the non-uniform gas flow leads to non-uniform distribution of the gas and temperature fields, thus affecting the device performance and optical appearance of the final photovoltaic product.

[0013] In summary, improved process boxes with larger gas orifices can slightly improve gas distribution, but they do not completely solve the problem. Further refinements to the process box design are needed to achieve more uniform gas distribution. Summary of the Invention [Problem to be solved by the invention]

[0014] In view of the problems existing in the prior art mentioned above, the present application provides a slot die gas distribution device for photovoltaic manufacturing, which effectively improves the uniformity of gas distribution in a process chamber. [Means for solving the problem]

[0015] The present application provides a slot die gas distribution system for photovoltaic manufacturing, comprising: a first gas distribution system at an inlet of a process chamber, the first gas distribution system having a first inlet and a first outlet, the first inlet connected to an intake duct, and the first outlet connected to the inlet of the process chamber; The first outlet and the inlet of the process chamber are connected by a first connecting device, which is a flat rectangular hollow box, and two opposing sides of the hollow box are open and serve as an inlet and an outlet, respectively. The first outlet, the inlet of the first connecting device, the outlet of the first connecting device, and the inlet of the process chamber have the same shape and size. The length of the hollow box is greater than its width and its width is greater than its height. The two open sides of the hollow box are parallel to the height direction of the hollow box, i.e., the inlet of the hollow box is elongated.

[0016] The gas is transported to the process chamber after passing through the inlet of the intake duct, the intake duct, the outlet of the intake duct, the inlet of the first gas distribution device (i.e., the first inlet), the first gas distribution device, the outlet of the first gas distribution device (i.e., the first outlet), the inlet of the first communication device (i.e., the inlet of the hollow box), the first communication device, the outlet of the first communication device (i.e., the outlet of the hollow box), and the inlet of the process chamber in that order.

[0017] In the examples of this application, "the length of the hollow box is greater than its width, and the width is greater than its height, and the two open side surfaces of the hollow box are parallel to the height of the hollow box" means that the length of the inlet / outlet of the hollow box is the same as the length of the hollow box, and the width of the inlet / outlet of the hollow box is the same as the height of the hollow box. That is, the inlet of the hollow box is elongated. Furthermore, "the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are all the same in shape and size" means that the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are all elongated, and their shapes and sizes are the same as the open side surfaces of the hollow box.

[0018] In the present embodiment, the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are all elongated and have the same size and shape, thereby improving the uniformity of gas distribution in the process chamber.

[0019] In some preferred embodiments, the ratio of the length, width and height of the flattened rectangular prismatic hollow box is between 5000:20:1 and 20000:100:1.

[0020] In some preferred embodiments, the first gas distribution device includes a first gas distribution duct; the first inlet is provided at a top of the first gas distribution duct such that a flow direction of gas passing through the first inlet is perpendicular to a bottom surface of the first gas distribution duct, and the top of the first gas distribution duct is the highest point of the first gas distribution duct from the ground; The first outlet is located at a lower position than the first inlet.

[0021] In the present embodiment, the first inlet is provided at the top of the first gas distribution duct so that the flow direction of the gas passing through the first inlet is perpendicular to the bottom surface of the first gas distribution duct, so that the gas flows into the first gas distribution duct from the top, flows to the bottom surface of the first gas distribution duct, rises along the side connected to the bottom surface, and finally flows out through the first outlet. "The first outlet is located at a lower position than the first inlet" means that "the height of the first outlet from the ground is lower than the height of the first outlet from the ground."

[0022] In some preferred embodiments, the first inlet is located at the top center of the first gas distribution duct.

[0023] In the embodiment of the present application, the first inlet is provided at the center of the top surface of the first gas distribution duct, so that the gas flows into the middle of the first gas distribution duct from the first inlet, and gas redistribution occurs, distributing the gas throughout the interior of the first gas distribution duct and improving the uniformity of the gas within the first gas distribution duct.

[0024] In some preferred embodiments, the first outlet is elongated, and the first outlet is disposed along the length of the first gas distribution duct and has a length equal to the length of the first gas distribution duct, i.e., the length of the first gas distribution duct is equal to the length of the first communication device.

[0025] In the present embodiment, the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are all elongated, and the lengths of the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are the same as the length of the first gas distribution duct (i.e., the length of the first gas distribution duct is the same as the length of the first communicating device (hollow box)). After the gas is uniformly distributed in the first gas distribution duct, it flows out from the first outlet, which has the same length as the first gas distribution duct. Throughout the entire flow process from the first gas distribution device to the first communicating device (i.e., the hollow box) and to the inlet of the process chamber, the area and shape of the cross-sectional area of ​​the gas flow remain constant, further improving the uniformity of the gas distribution after reaching the process chamber.

[0026] In some preferred embodiments, the height direction of the hollow box is perpendicular to the ground so that the heights of the inlet of the hollow box and the outlet of the hollow box from the ground are the same, i.e., so that the heights of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber from the ground are the same.

[0027] In the embodiments of the present application, "the height direction of the first communicating device (i.e., the hollow box) is perpendicular to the ground" means that "the plane formed by the length and width of the first communicating device (i.e., the hollow box) is parallel to the ground", that is, the first communicating device (i.e., the hollow box) is parallel to the ground. Since the heights from the ground of the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are all the same, the height of the flow cross section of the gas flow remains constant during the process of gas transportation from the intake duct into the process chamber, and the stability of gas distribution during the flow process is improved.

[0028] As described above, the height (i.e., height from the ground), size, and shape of the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are all the same. Therefore, before the gas enters the process chamber, uniform gas distribution is achieved through the first gas distribution duct. After that, the area, shape, and height of the flow cross section of the gas flow always remain the same as the process of passing through the first outlet, the first communicating device, and the inlet of the process chamber, thereby effectively ensuring the uniformity of the distribution of gas entering the process chamber.

[0029] In some preferred embodiments, the first gas distribution device includes m first gas distribution ducts, m being 2 or more, the m first gas distribution ducts are sequentially connected to each other, and two adjacent first gas distribution ducts are connected to each other via a second communication device so as to realize multiple gas distribution processes, and the second communication device and the first communication device have the same structure; The first inlet is provided in a starting first gas distribution duct, and the first outlet is provided in a terminal first gas distribution duct.

[0030] Note that the fact that the second communication device and the first communication device are structurally identical can also be understood as meaning that the second communication device is a replica of the first communication device. Furthermore, although it was explained above that "the height direction of the first communication device (i.e., the hollow box) is perpendicular to the ground," because the second communication device and the first communication device are identical, the height direction of the second communication device is perpendicular to the ground, i.e., the heights from the ground of the inlet and outlet of the hollow box of the second communication device are the same. When two adjacent first gas distribution ducts are connected via the second communication device, a gas flow orifice is formed in the first gas distribution duct at the connection between the first gas distribution duct and the second communication device, with the same height (height from the ground) and size and shape as the inlet / outlet of the second communication device.

[0031] In the embodiment of the present application, by sequentially connecting multiple first gas distribution ducts, multiple uniform gas distribution processes are realized, and the uniformity of gas entering the process chamber is improved. The first inlet is provided on the top surface of the starting first gas distribution duct, the inlet of the starting first gas distribution duct is the first inlet, the outlet of the starting first gas distribution duct is the above-mentioned gas flow orifice, and except for the starting first first gas distribution duct, each of the other first gas distribution ducts is provided with two above-mentioned gas flow orifices (one is used as an inlet and the other is used as an outlet), and the outlet of the terminal first gas distribution duct is the first outlet of the first gas distribution device. The height (height from the ground), size, and shape of all gas flow orifices are the same as those of the first outlet, the inlet of the second communicating device (i.e., the inlet of the hollow box), the outlet of the second communicating device (i.e., the outlet of the hollow box), and the inlet of the process chamber. This allows the gas to be uniformly distributed multiple times through the first gas distribution duct before entering the process chamber, and the area, shape, and height of the gas flow cross section remain constant during the transport process through the second communicating device, the first outlet, the first communicating device, and the inlet of the process chamber.

[0032] In some preferred embodiments, the first gas distribution duct is semi-cylindrical or rectangular.

[0033] In some preferred embodiments, when the first gas distribution duct is semi-cylindrical, a rectangular plane of the semi-cylindrical duct is located below a curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct is parallel to the ground; The first inlet is located on the curved surface of the semi-cylindrical duct, and the height of the first inlet from the rectangular plane of the semi-cylindrical duct is the radius of the semi-cylindrical duct. With this design, the flow direction of the gas passing through the first inlet is perpendicular to the rectangular plane of the semi-cylindrical duct. "The height of the first inlet from the rectangular plane of the semi-cylindrical duct is the radius of the semi-cylindrical duct" means that the gas flows into the semi-cylindrical duct at the highest point from the ground, and at the same time, after the gas is uniformly distributed within the semi-cylindrical duct, it flows out from the first outlet, which is located at a relatively low position.

[0034] With this design, the gas passes through the first inlet in a direction perpendicular to the rectangular plane of the semi-cylindrical duct, then descends to the rectangular plane of the lower semi-cylindrical duct, and then ascends along the curved surface of the semi-cylindrical duct, thereby achieving gas distribution in the semi-cylindrical duct.

[0035] The rectangular plane of the semi-cylindrical duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct is parallel to the ground, thereby realizing a first gas distribution duct that is stable and less prone to vibration.

[0036] In some preferred embodiments, the first inlet is provided at the center of the curved surface of the semi-cylindrical duct.

[0037] In the present embodiment, gas flows into the middle of the first gas distribution duct through the first inlet, where gas redistribution occurs. The gas flows and diffuses simultaneously in the direction of the semicircular cross section of the semi-cylindrical duct and in the direction of the length of the duct, distributing the gas throughout the interior of the semi-cylindrical duct and improving the uniformity of the gas within the semi-cylindrical duct.

[0038] In some preferred embodiments, the first outlet is provided on the curved surface of the semi-cylindrical duct, the height of the first outlet from a rectangular plane of the semi-cylindrical duct is smaller than the radius of the semi-cylindrical duct, and the distance between two semi-circular planes of the semi-cylindrical duct is the length of the semi-cylindrical duct, and the first outlet is provided along the length of the semi-cylindrical duct.

[0039] In the present embodiment, the height of the first outlet from the ground is lower than that of the first outlet. As can be seen from the above description, "the first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber are all elongated, and their shapes and sizes are the same as the open side of the hollow box." In the present embodiment, the length of the first outlet and the length of the semi-cylindrical duct are the same, i.e., the length of the semi-cylindrical duct and the first communicating device (i.e., the hollow box) are the same.

[0040] In some preferred embodiments, the first gas distribution ducts are of the same size.

[0041] In some preferred embodiments, the first gas distribution ducts vary in size.

[0042] In some preferred embodiments, the method further includes a second gas distribution device at an outlet of the process chamber, the second gas distribution device having a second inlet and a second outlet, the outlet of the process chamber being connected to the second inlet and the second outlet being connected to an exhaust duct; The outlet of the process chamber and the second inlet communicate with each other via a third communicating device, and the third communicating device and the first communicating device have the same structure.

[0043] In an embodiment of the present application, the slot die type gas distribution device further includes a second gas distribution device located at the exit of the process chamber, and the concept of the second gas distribution device is similar to that of the first gas distribution device.

[0044] Specifically, after treating and processing the photovoltaic devices in the process chamber, the gas flows out of the outlet of the process chamber and through the third communication device to the second gas distribution device.

[0045] Note that the structural similarity between the third communication device and the first communication device may be understood as the third communication device being a replica of the first communication device. In the above description, two opposing side surfaces parallel to the height direction of the hollow box of the third communication device are uncovered and serve as the inlet and outlet of the third communication device. That is, the outlet of the process chamber, the inlet / outlet of the hollow box of the third communication device, and the second inlet are all elongated, and their shapes and sizes are the same as the uncovered side surfaces of the hollow box. That is, the lengths of the outlet of the process chamber, the inlet / outlet of the hollow box of the third communication device, and the second inlet are the same as the length of the hollow box, and the widths of the outlet of the process chamber, the inlet / outlet of the hollow box of the third communication device, and the second inlet are the same as the height of the hollow box.

[0046] The gas flowing out from the outlet of the process chamber flows sequentially through the inlet of the third communicating device, the third communicating device, the outlet of the third communicating device, the second inlet, the second gas distribution device, the second outlet, and the exhaust duct, and the area and shape of the cross section of the gas flow of the gas flowing out from the outlet of the process chamber remain the same throughout the entire flow process.

[0047] Furthermore, while it was explained above that "the height direction of the first communicating device (i.e., the hollow box) is perpendicular to the ground," the height direction of the third communicating device is also perpendicular to the ground; that is, the height from the ground of the inlet and outlet of the hollow box of the third communicating device is the same. As can be seen from the above explanation, the height (height from the ground), size, and shape of the outlet of the process chamber, the inlet of the third communicating device, the outlet of the third communicating device, and the second inlet are the same; that is, the height of the airflow cross section of the gas flowing out from the outlet of the process chamber is the same throughout the entire flow process.

[0048] In some preferred embodiments, the second gas distribution device includes a second gas distribution duct; the second outlet is provided at the top of the second gas distribution duct so that the flow direction of the gas flowing out of the second outlet is perpendicular to the bottom surface of the second gas distribution duct, the second inlet is located at a position lower than the second outlet, and the top of the second gas distribution duct is the highest position of the second gas distribution duct from the ground; The second inlet is elongated, and is disposed along the length of the second gas distribution duct, and has the same length as the second gas distribution duct, i.e., the length of the second gas distribution duct is the same as the length of the third communication device.

[0049] In an embodiment of the present application, the second gas distribution device includes a second gas distribution duct, a second inlet provided in the gas distribution duct and located at a lower position than the second outlet, and the second outlet provided at the top of the gas distribution duct so that gas from the process chamber can enter the second gas distribution duct from the second inlet located at the lower position and be uniformly distributed in the second gas distribution duct.

[0050] The second gas distribution duct and the first gas distribution duct described above both have the same function of gas redistribution, and the terms "first" and "second" are used only to distinguish between the first gas distribution duct being a device at the inlet of the process chamber and the second gas distribution duct being a device at the outlet of the process chamber. The second gas distribution duct and the first gas distribution duct described above may be the same or different in shape and size.

[0051] Furthermore, the position and structure of the first inlet are the same as the position and structure of the second outlet, and the position and structure of the first outlet are the same as the position and structure of the second inlet, so the height (i.e., height from the ground), size, and shape of the outlet of the process chamber, the inlet / outlet of the third communication device (i.e., the inlet / outlet of the hollow box), the inlet of the hollow box, and the second inlet are the same.

[0052] "The second inlet is arranged along the longitudinal direction of the second gas distribution duct and has the same length as the length of the second gas distribution duct" means that the lengths of the outlet of the process chamber, the inlet of the hollow box, the outlet of the hollow box, and the second inlet are all the same as the length of the gas distribution duct, and further, the length of the gas distribution duct of the second gas distribution device is the same as the length of the hollow box of the third communication device.

[0053] In some preferred embodiments, the height of the second inlet is greater than the height of the first outlet. Note that, as described above, the heights (i.e., height from the ground) of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber are the same, and the heights (i.e., height from the ground) of the outlet of the process chamber, the inlet / outlet of the third communication device (i.e., inlet / outlet of the hollow box), the inlet of the hollow box, and the second inlet are the same, so "the height of the second inlet is greater than the height of the first outlet" means that the height of the inlet of the process chamber is greater than the height of the outlet of the process chamber.

[0054] In some preferred embodiments, the second gas distribution device includes one second gas distribution duct, and the second gas distribution duct has a semi-cylindrical or rectangular parallelepiped shape.

[0055] In some preferred embodiments, when the second gas distribution duct is semi-cylindrical, the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is parallel to the ground; the second inlet is provided on a curved surface of the semi-cylindrical duct, and a height of the second inlet from a rectangular plane of the semi-cylindrical duct is smaller than a radius of the semi-cylindrical duct; The second outlet is provided on the curved surface of the semi-cylindrical duct, and the height of the second outlet from the rectangular plane of the semi-cylindrical duct is the radius of the semi-cylindrical duct.

[0056] That is, the second outlet is provided at the highest point of the curved surface of the semi-cylindrical duct, and the position of the second outlet is higher than the second inlet.

[0057] In some preferred embodiments, the intake duct and the exhaust duct are curved pipes. In the examples of the present application, the intake duct and the exhaust duct are formed by connecting two ducts with different flow directions. Furthermore, the flow directions of the two ducts are set to form a right angle. It should be noted that in this application, the size design of the above-mentioned first gas distribution duct and second gas distribution duct can be adjusted according to the size of the final PV panel and the corresponding process box. [Brief explanation of the drawings]

[0058] [Figure 1] Schematic diagram of several photovoltaic stacks (top layer + bottom stack) reacting with gas under heating conditions in a process chamber. [Figure 2]2A and 2B show a standard design of a conventional selenization / sulfurization process box in one embodiment, where FIG. 2A is a perspective view and FIG. 2B is a detailed side view. [Figure 3] 3A and 3B are diagrams showing a standard design of a left gas inlet in one embodiment of a conventional selenization / sulfurization process apparatus, in which FIG. 3A is a plan view and FIG. 3B is a side view. [Figure 4] 4A is a schematic illustration of non-uniform gas distribution in one example of a standard selenization / sulfurization process box, where FIG. 4A is a simulated gas flow line in the selenization / sulfurization process box, and FIG. 4B is an optical scanning photograph of the top layer of an associated photovoltaic stack processed in a standard selenization or sulfurization process box under the same process conditions. [Figure 5] 5A and 5B are diagrams showing different conventional designs of the intake section of a process chamber, where FIG. 5A is a standard design, FIG. 5B is a modified design 1, and FIG. 5C is a modified design 2. [Figure 6] 6A and 6B show the non-uniform gas distribution in the two improved process boxes. FIG. 6A shows the simulated gas flow lines for improved design 1 (FIG. 5B), and FIG. 6B shows the simulated gas flow lines for improved design 2 (FIG. 5C). [Figure 7] 1 is a schematic diagram showing the connection relationship between a first gas distribution device and a first communication device designed at a gas inlet portion of a process chamber according to the present application. FIG. [Figure 8] 1 is another schematic diagram of a process chamber gas inlet design according to the present application. FIG. [Figure 9] 1 is a structural schematic diagram of a first gas distribution device according to the present application. [Figure 10] 10 is a schematic diagram showing the connection relationship between a second gas distribution device and a third communication device designed at the gas outlet of the process chamber according to the present application. FIG. [Figure 11] 1 is a structural schematic diagram of a gas inlet portion when the first gas distribution device according to the present application has a semi-cylindrical shape. [Figure 12] 10 is a structural schematic diagram of a gas outlet portion when the second gas distribution device according to the present application has a semi-cylindrical shape. FIG. [Figure 13]FIG. 13 is a diagram showing a comparison of gas velocity on the X axis between the standard design and the slot die design of the present application when the designs of FIGS. 11 and 12 are used. [Figure 14] FIG. 13 is a diagram showing a comparison of gas velocity on the Y axis between the standard design and the slot die design of the present application when the designs of FIGS. 11 and 12 are used. [Figure 15] FIG. 13 is a diagram showing a comparison of gas velocity in the Z axis between the standard design and the slot die design of the present application when the designs of FIGS. 11 and 12 are used. [Figure 16] FIG. 13 is a schematic diagram of simulated gas flow lines in a process chamber when the designs of FIGS. 11 and 12 are adopted. [Figure 17] FIG. 10 is a schematic diagram of a first gas distribution duct at the gas inlet section according to another embodiment employing a design of two equal-sized rectangular parallelepipeds. [Figure 18] 10 is a schematic diagram of a first gas distribution duct at the gas inlet section according to another embodiment employing a rectangular parallelepiped design with two different sizes. FIG. [Figure 19] FIG. 10 is a schematic diagram showing a comparison of gas velocity on the X-axis within a semi-cylindrical and rectangular parallelepiped design adopted by the first gas distribution duct. [Figure 20] 10 is a schematic diagram of a second gas distribution duct at the gas outlet according to another embodiment with a rectangular parallelepiped design. FIG. [Figure 21] FIG. 10 is a schematic diagram of a second gas distribution duct at the gas outlet according to another embodiment employing a smaller rectangular parallelepiped design. DETAILED DESCRIPTION OF THE INVENTION

[0059] In this application, in order to solve the problem of gas distribution inconsistency in the photovoltaic manufacturing process box, a first gas distribution device and a first communication device of slot die type are designed at the gas inlet section of the inlet of the process box, and a second gas distribution device and a third communication device of slot die type are designed at the gas outlet section of the outlet of the process chamber.

[0060] Example 1 Referring to FIG. 7, for the gas inlet of the process box, instead of the manifold 3 used in the standard design, a first gas distributor 105 with a slot die design is used. In this embodiment, a first gas distributor 105 and a first communicating device 9 are used to distribute and transport gas into the process chamber 20. The first communicating device 9 is a flat rectangular hollow box, with two opposing sides of the hollow box that are open and serve as an inlet and an outlet, respectively. The first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber all have the same shape and size. The length of the hollow box is greater than the width, and the width is greater than the height. The two open sides of the hollow box are parallel to the height of the hollow box, that is, the inlet of the hollow box is elongated.

[0061] Referring to Figure 8, at the gas inlet section of the process box, the gas passes through the inlet 1 of the intake duct, the intake duct 2, the outlet of the intake duct, the inlet (i.e., the first inlet) 101 of the first gas distribution device, the first gas distribution device 105, the outlet (i.e., the first outlet) 102 of the first gas distribution device, the inlet 103 of the first communication device (i.e., the inlet of the hollow box), the first communication device 9, the outlet (i.e., the outlet of the hollow box) 5 of the first communication device, and the inlet 104 of the process chamber in that order, before being transported to the process chamber 20.

[0062] The inlet of the first communicating device is rectangular, and the length and width of the inlet are the same as the length and height of the first communicating device (a flattened rectangular hollow box). The first outlet 102, the inlet 103 of the first communicating device, the outlet 5 of the first communicating device, and the inlet 104 of the process chamber are all the same in shape and size. Furthermore, after the gas is delivered from the first outlet 102 of the first gas distribution device 105, the cross-sectional size and shape of the gas flow always remain the same as it passes through the inlet 103 of the first communicating device, the first communicating device 9, the outlet 5 of the first communicating device, and the inlet 104 of the process chamber.

[0063] Preferably, the ratio of the length, width and height of the flat rectangular prism-shaped hollow box is between 5000:20:1 and 20000:100:1, i.e., the ratio of the length to the width of the first outlet, the inlet of the first communicating device, the outlet of the first communicating device and the inlet of the process chamber is between 5000:1 and 20000:1.

[0064] Furthermore, the first gas distribution device 105 includes a first gas distribution duct 1051, with a first inlet at the top of the first gas distribution duct, preferably at the center of the top of the first gas distribution duct, and a first outlet located lower than the first inlet, the shape and size of which depend on the shape and size of the intake duct 2, and the first outlet being elongated.

[0065] 9, the first gas distribution device 105 may include a plurality of first gas distribution ducts 1051. For example, m first gas distribution ducts 1051 are sequentially connected to form one first gas distribution device 105. For convenience, the m first gas distribution ducts are also connected to each other using the above-described first communication device 9, and the first communication device 9 used between the m first gas distribution ducts is referred to as the second communication device 7. Note that the second communication device 7 and the first communication device 9 are essentially the same device, and the terms "first" and "second" used in this specification are used only to distinguish between different installation positions of the communication devices.

[0066] Furthermore, the above m=2 realizes multiple uniform gas distribution processes, improving the uniformity of the gas entering the process chamber. For example, in Fig. 9, the first inlet is provided at the center of the top of the first first gas distribution duct 1051, and the first outlet is provided at a position lower than the top of the last first gas distribution duct 1051. The gas enters from the top of the first first gas distribution duct 1051 and undergoes a first uniform gas distribution process in the first first gas distribution duct 1051. Then, the gas is transported into the last first gas distribution duct 1051 through the second communicating device 7 and undergoes a second uniform gas distribution process, and then the gas is transported to the process chamber 20 through the first communicating device 9. As a result, at the gas inlet section at the entrance of the process box, the gas enters the first gas distributor 105 from the intake duct 2 before entering the process chamber, and undergoes at least two uniform gas distribution processes within the first gas distributor 105. In the process of passing through the second communicating device 7, the first outlet 102, the first communicating device 9, and the inlet 104 of the process chamber, the area, shape, and height of the flow cross section of the gas flow always remain the same, effectively ensuring the uniform distribution of the gas entering the process chamber.

[0067] 10, according to the present application, a second gas distribution device 13 is designed with a slot die design for the gas outlet at the outlet of the process box, and the design concept of the second gas distribution device 13 is similar to that of the first gas distribution device 105. Specifically, the second gas distribution device 13 has a second inlet 106 and a second outlet 107, the outlet 11 of the process chamber is connected to the second inlet 106, and the second outlet 107 is connected to the exhaust duct 14; The outlet 11 of the process chamber and the second inlet 106 (second gas distribution device 13) are connected via a third communication device 12, which has the same structure as the first communication device 9. Note that the third communication device 12, the first communication device 9, and the second communication device 7 are essentially the same device, and the terms "third," "first," and "second" are used herein only to distinguish between different installation locations of the communication devices. After the photovoltaic device is treated and processed in the process chamber, the gas flows out of the outlet 11 of the process chamber and into the second gas distribution device 13 via the third communication device 12. Referring to the description of the gas inlet section of the process chamber above, in the gas outlet section of the process chamber, the process chamber outlet 11, the inlet of the third communicating device 12, the outlet of the third communicating device 12, and the second inlet 106 are all elongated, and their shapes and sizes are the same as the open side of the hollow box of the third communicating device 12. That is, the lengths of the process chamber outlet 11, the inlet of the third communicating device 12, the outlet of the third communicating device 12, and the second inlet 106 are the same as the length of the third communicating device 12, and the widths of the process chamber outlet 11, the inlet of the third communicating device 12, the outlet of the third communicating device 12, and the second inlet 106 are the same as the width of the third communicating device 12. The area and shape of the cross section of the gas flowing out of the process chamber outlet 11 are the same throughout the entire flow process.

[0068] The second gas distribution device 13 includes a second gas distribution duct, a second outlet is provided at the top of the second gas distribution duct (preferably at the top center of the second gas distribution duct), and a second inlet is located at a lower position than the second outlet. The second inlet is arranged along the length of the second gas distribution duct and has the same length as the second gas distribution duct. As can be seen from the above, the process chamber outlet 11, the third communicating device 12, and the second gas distribution device 13 have the same length.

[0069] Since there is no need to redistribute the gas multiple times, the second gas distribution device 13 uses only one second gas distribution duct for gas collection, and the gas in the second gas distribution duct passes through the exhaust duct 14 after being uniformly distributed and finally exits from the exhaust duct outlet 15.

[0070] In addition, the height of the second entrance of the exit portion of the process chamber is greater than the height of the first exit of the exit portion of the process chamber, which means that the height of the exit of the process chamber is greater than the height of the entrance of the process chamber.

[0071] <Example 2> In this embodiment, the first gas distribution duct 1051 is semi-cylindrical, see Figure 11, where Figure 11a is a plan view and Figure 11b is a side view. The arrows indicate the movement of the airflow. To avoid unnecessary duplication, only the differences from the first gas distribution device in the above-described embodiment will be described.

[0072] In this embodiment, the first gas distribution device includes two semi-cylindrical ducts, which are respectively semi-cylindrical first gas distribution duct 6 and first gas distribution duct 6. The rectangular plane of the semi-cylindrical duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct is parallel to the ground.

[0073] The first inlet 101 is provided on the curved surface of the first semi-cylindrical duct 6 (preferably at the center of the curved surface), and the height of the first inlet 101 from the rectangular plane of the semi-cylindrical duct is the radius of the semi-cylindrical duct.

[0074] The two semi-cylindrical ducts are connected to each other via a second communicating device 7, and the first outlet 102 is provided on the curved surface of the second semi-cylindrical duct 8 and has a height lower than that of the first inlet 101. When there are multiple first gas distribution ducts in the first gas distribution device, each first gas distribution duct is further provided with a gas flow orifice 1052 to communicate the first gas distribution ducts (6, 8) with the second communicating device 7.

[0075] The first outlet 102 is provided along the length of the semi-cylindrical duct 8, and if the distance between the two semi-circular planes of the semi-cylindrical duct 8 is defined as the length of the semi-cylindrical duct 8, the length of the first outlet 102 is the same as the length of the semi-cylindrical duct 8. Furthermore, the gas undergoes a first uniform gas distribution in the first semi-cylindrical duct 6, is transported to the second semi-cylindrical duct 8 via the second communicating device 7, is subjected to a second uniform gas distribution in the second semi-cylindrical duct 8, and is transported to the process chamber 20 via the first communicating device 9, and the height, area, and shape of the gas flow cross section at each inlet / outlet before the gas enters the process chamber are the same.

[0076] The two semi-cylindrical ducts (6, 8) are used to perform two uniform gas distribution processes, which greatly improves the uniformity of gas distribution in the first gas distribution duct along the Z axis. To achieve a laminar airflow within the second communicating device 7 and the first communicating device 9, the length, width and height ratios of the second communicating device 7 and the first communicating device 9 are between 5000:20:1 and 20000:100:1.

[0077] In this embodiment, the second gas distribution duct is semi-cylindrical. See Figure 12, where Figure 12a is a plan view and Figure 12b is a side view. The arrows indicate the airflow direction. To avoid unnecessary duplication, only differences from the second gas distribution device in the above-described embodiment will be described.

[0078] In this embodiment, the second gas distribution device includes a semi-cylindrical second gas distribution duct, and the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is located below the curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is parallel to the ground; The second inlet 106 is provided on the curved surface of the semi-cylindrical duct, and the height of the second inlet from the rectangular plane of the semi-cylindrical duct is smaller than the radius of the semi-cylindrical duct; The second outlet 107 is provided at the center of the curved surface of the semi-cylindrical duct, and the height of the second outlet from the rectangular plane of the semi-cylindrical duct is the radius of the semi-cylindrical duct.

[0079] To evaluate the effect of the gas inlet and outlet design of the process box of this example on gas uniformity within the process chamber, a fluid dynamics simulation similar to that shown in Figures 4 and 6 was performed. The simulation setup involved setting the top and remaining boundaries of the process box as if they were normal walls, i.e., without gas outlets. Gas exits the inlet on the left and leaves the outlet on the right. The remaining boundary conditions remained the same as those shown in Figures 4 and 6.

[0080] 13, 14, 15 and 16 show the relevant simulation results of gas velocity and gas streamline distribution in the X, Y and Z axes, respectively.

[0081] FIG. 13 shows a comparison of gas velocity on the X-axis between the standard design (FIG. 4) and the slot-die gas distributor design of the present embodiment (FIGS. 11 and 12). In FIG. 13, for the standard design, the round lines represent the gas velocity distribution, with each circle representing the gas exit velocity at an outlet 5. For the slot-die design, the gas velocity in FIG. 13 is a continuous solid line due to the square-edged outlet 5. It is clear that the slot-die design makes the relative gas velocity distribution on the X-axis more uniform than the standard design. The difference between the maximum and minimum gas velocities among the 20 outlets 5 in the standard design is about 1 m / s. For the slot-die gas distributor design of the present embodiment, the change in gas velocity is about 0.1 m / s, i.e., the distribution of gas jets along the Z-axis on the X-axis is more uniform than that of the standard design.

[0082] Figures 14 and 15 show a comparison of gas velocities in the Y and Z axes, respectively, between the standard design and the slot die gas distributor design of the present invention. It was found that the standard design had a gas velocity variation of approximately 0.1 m / s in the Y and Z axes, while the slot die design had a negligible change in gas velocity.

[0083] Figure 16 shows the gas distribution flow lines within the process chamber of the slot die design of the present application. It clearly shows that there are no "finger"-shaped gas jets or gas vortexes. The gas flow lines are parallel to each other, resulting in a more uniform gas flow distribution within the entire process chamber.

[0084] Example 3 To avoid unnecessary duplication, only differences from the above-described embodiment will be described. Referring to FIG. 17, FIG. 17(a) is a plan view, and FIG. 17(b) is a side view. Arrows indicate the movement of airflow. In this embodiment, the first gas distribution duct 1051 in the first gas distribution device is rectangular, and the two first gas distribution ducts 1051 have the same size. Since the two first gas distribution ducts 1051 are used to achieve two uniform gas distribution processes, similar uniform gas distribution can be achieved within the process chamber 20.

[0085] Example 4 To avoid unnecessary repetition, only differences from the above-described embodiment will be described. Referring to FIG. 18, FIG. 18(a) is a plan view and FIG. 18(b) is a side view. Arrows indicate the movement of airflow. In this embodiment, the first gas distribution duct 1051 in the first gas distribution device is rectangular, and the sizes of the two first gas distribution ducts 1051 are different. Because the size of the first first gas distribution duct 1051 is larger than that shown in FIG. 17, the gas flow distribution along the Z-axis at the outlet 5 can be slightly improved compared to the design in FIG. 17.

[0086] Figure 19 shows a comparison of gas velocity on the X-axis for the two designs shown in Figures 17 and 18, and also compares these two designs with the gas distribution effect of the semi-cylindrical design shown in Figure 13. It can be seen that the air velocity delivered from the large rectangular first gas distribution duct 1051 is more uniform than the air velocity delivered from the small rectangular first gas distribution duct 1051, which is similar to the semi-circular design.

[0087] <Example 5> To avoid unnecessary repetition, only differences from the above-described embodiment will be described. Referring to Fig. 20, Fig. 20a) is a plan view and Fig. 20b) is a side view. Arrows indicate the movement of airflow. In this embodiment, another implementation idea is provided for the design of the process chamber gas outlet. At the process chamber gas outlet, the second gas distribution duct of the second gas distribution device is designed in the shape of a rectangular parallelepiped.

[0088] Example 6 To avoid unnecessary repetition, only differences from the above-described embodiment will be described. Referring to Fig. 21, Fig. 21a) is a plan view and Fig. 21b) is a side view. Arrows indicate the movement of airflow. In this embodiment, at the process chamber gas outlet, the second gas distribution duct of the second gas distribution device is designed in a rectangular parallelepiped shape, and the size of the rectangular parallelepiped second gas distribution duct is smaller than that in the above-described embodiment 5.

[0089] As described above, the present application provides a slot die type gas distribution device for photovoltaic manufacturing, which provides a slot die type gas distribution structure design for the gas inlet and gas outlet. Compared with the standard design using a manifold with multiple outlet pipes, the present application uses an elongated design for each inlet and outlet during the gas flow process, thereby achieving more uniform gas distribution within the process box and effectively improving the semiconductor performance and appearance of photovoltaic products.

[0090] The present application is not limited to the specific embodiments described above, and any modifications made by those skilled in the art from the above concept without any creative labor are all included in the scope of protection of the present application. [Explanation of symbols]

[0091] 1 Inlet of intake duct 2 Intake duct 3 Gas Manifold 4 Transport pipe 5. First communication device outlet 6, 8, 1051 First gas distribution duct 7 Second communication device 9 First communication device 10 Bowl-shaped hole 11 Process chamber exit 12 Third communication device 13 Second gas distribution device 14 Exhaust duct 15 Exhaust duct outlet 16 Process Box 17 Bottom Plate 18 PCB 19 Cover plate 20 Process Chamber 101 First Entrance 102 Exit 1 103 Hollow Box Entrance 104 Process Room Entrance 105 First gas distribution device 106 Second Entrance 107 Second Exit 1052 Gas flow orifice

Claims

1. 1. A slot die gas distribution apparatus for photovoltaic manufacturing, comprising: a first gas distribution device at an inlet of a process chamber, the first gas distribution device having a first inlet and a first outlet, the first inlet connected to an intake duct and the first outlet connected to the inlet of the process chamber; The first outlet and the inlet of the process chamber are connected by a first communicating device, which is a flat rectangular prism-shaped hollow box, and two opposing sides of the hollow box are open and serve as an inlet and an outlet, respectively. The first outlet, the inlet of the first communicating device, the outlet of the first communicating device, and the inlet of the process chamber have the same shape and size. The length of the hollow box is greater than the width, and the width is greater than the height. The two open sides of the hollow box are parallel to the height direction of the hollow box, i.e., the inlet of the hollow box is elongated. A slot die gas distribution device for photovoltaic manufacturing.

2. The ratio of the length, width and height of the flat rectangular hollow box is between 5000:20:1 and 20000:100:

1.

10. The slot die gas distribution system for photovoltaic manufacturing according to claim 1.

3. the first gas distribution device includes a first gas distribution duct; the first inlet is provided at a top of the first gas distribution duct such that a flow direction of gas passing through the first inlet is perpendicular to a bottom surface of the first gas distribution duct, the top of the first gas distribution duct being the highest point of the first gas distribution duct from the ground; The first outlet is located at a lower position than the first inlet.

3. The slot die gas distribution apparatus for photovoltaic manufacturing according to claim 2.

4. The first inlet is located at the top center of the first gas distribution duct.

4. The slot die gas distribution system for photovoltaic manufacturing according to claim 3.

5. The first outlet is elongated, and the first outlet is disposed along the length of the first gas distribution duct and has the same length as the length of the first gas distribution duct, i.e., the length of the first gas distribution duct is the same as the length of the first communication device.

5. The slot die gas distribution system for photovoltaic manufacturing according to claim 4.

6. The height direction of the hollow box is perpendicular to the ground so that the heights of the inlet of the hollow box and the outlet of the hollow box from the ground are the same, that is, the heights of the first outlet, the inlet of the first communication device, the outlet of the first communication device, and the inlet of the process chamber from the ground are the same.

6. The slot die gas distribution system for photovoltaic manufacturing according to claim 5.

7. the first gas distribution device includes m first gas distribution ducts, m being 2 or more, the m first gas distribution ducts are sequentially connected to each other, and two adjacent first gas distribution ducts are connected to each other via a second communication device so as to realize multiple gas distribution processes, and the second communication device and the first communication device have the same structure; The first inlet is provided in a first gas distribution duct at a starting end, and the first outlet is provided in a first gas distribution duct at a terminal end.

7. The slot die gas distribution system for photovoltaic manufacturing according to claim 6.

8. The first gas distribution duct is semi-cylindrical or rectangular.

8. The slot die gas distribution system for photovoltaic manufacturing according to claim 7.

9. When the first gas distribution duct is semi-cylindrical, a rectangular plane of the semi-cylindrical duct is located below a curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct is parallel to the ground; The first inlet is provided on the curved surface of the semi-cylindrical duct, and the height of the first inlet from the rectangular plane of the semi-cylindrical duct is the radius of the semi-cylindrical duct.

9. The slot die gas distribution system for photovoltaic manufacturing according to claim 8.

10. The first inlet is provided at the center of the curved surface of the semi-cylindrical duct.

10. The slot die gas distribution apparatus for photovoltaic manufacturing according to claim 9.

11. The first outlet is provided on the curved surface of the semi-cylindrical duct, the height of the first outlet from a rectangular plane of the semi-cylindrical duct is smaller than the radius of the semi-cylindrical duct, and the distance between the two semi-circular planes of the semi-cylindrical duct is defined as the length of the semi-cylindrical duct, and the first outlet is provided along the length direction of the semi-cylindrical duct.

11. The slot die gas distribution system for photovoltaic manufacturing of claim 10.

12. The first gas distribution ducts are of the same size.

12. The slot die gas distribution system for photovoltaic manufacturing according to claim 11.

13. The plurality of first gas distribution ducts have different sizes.

13. The slot die gas distribution system for photovoltaic manufacturing of claim 12.

14. a second gas distribution device at an outlet of the process chamber, the second gas distribution device having a second inlet and a second outlet, the outlet of the process chamber connected to the second inlet and the second outlet connected to an exhaust duct; The outlet of the process chamber and the second inlet are communicated with each other via a third communication device, and the third communication device and the first communication device have the same structure.

10. The slot die gas distribution system for photovoltaic manufacturing according to claim 1.

15. the second gas distribution device includes a second gas distribution duct; the second outlet is provided at the top of the second gas distribution duct so that the flow direction of the gas flowing out of the second outlet is perpendicular to the bottom surface of the second gas distribution duct, the second inlet is located at a position lower than the second outlet, and the top of the second gas distribution duct is the highest position of the second gas distribution duct from the ground; The second inlet is elongated, and the second inlet is disposed along the length of the second gas distribution duct and has the same length as the second gas distribution duct, i.e., the length of the second gas distribution duct is the same as the length of the third communication device.

15. The slot die gas distribution system for photovoltaic manufacturing of claim 14.

16. The height of the second inlet is greater than the height of the first outlet.

16. The slot die gas distribution system for photovoltaic manufacturing of claim 15.

17. the second gas distribution device includes one second gas distribution duct; The second gas distribution duct is semi-cylindrical or rectangular.

17. The slot die gas distribution system for photovoltaic manufacturing of claim 16.

18. When the second gas distribution duct is semi-cylindrical, a rectangular plane of the semi-cylindrical duct of the second gas distribution duct is located below a curved surface of the semi-cylindrical duct, and the rectangular plane of the semi-cylindrical duct of the second gas distribution duct is parallel to the ground; the second inlet is provided on a curved surface of the semi-cylindrical duct, and a height of the second inlet from a rectangular plane of the semi-cylindrical duct is smaller than a radius of the semi-cylindrical duct; The second outlet is provided on the curved surface of the semi-cylindrical duct, and the height of the second outlet from the rectangular plane of the semi-cylindrical duct is the radius of the semi-cylindrical duct.

20. The slot die gas distribution system for photovoltaic manufacturing of claim 17.

19. The intake duct and the exhaust duct are curved pipes.

20. The photovoltaic manufacturing slot die gas distribution apparatus of claim 18.

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