Photocurable compositions with high silicon content
A high-silicon-content photocurable composition addresses the need for improved etch resistance in IAP materials, providing effective pattern transfer and high etching resistance for semiconductor manufacturing.
Patent Information
- Application Number
- JP2025527826
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-12-06
- Filing Date
- 2023-11-20
- Publication Date
- 2025-12-16
AI Technical Summary
Existing inkjet adaptive planarization (IAP) materials lack high etch resistance, which is crucial for forming smooth photocurable layers suitable for semiconductor manufacturing processes.
A photocurable composition with a high silicon content, comprising specific silicon-containing monomers and optional non-silicon-containing monomers, designed to form a photocurable layer with at least 15 wt% silicon, low viscosity, and minimal solvent content, which can be cured to create a layer with high etching resistance.
The composition achieves high etching resistance, low viscosity, and fast curing speed, enabling effective pattern transfer in nanoimprint lithography and inkjet adaptive planarization, suitable for semiconductor manufacturing processes.
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Figure 2025540644000001_ABST
Abstract
Description
[Technical Field]
[0001] The present disclosure relates to photocurable compositions suitable for forming photocurable layers having high silicon content, particularly photocurable compositions for inkjet compatible planarization. [Background technology]
[0002] Inkjet adaptive planarization (IAP) is a process for planarizing the surface of a substrate, such as a wafer bearing electrical circuitry, by jetting droplets of a photocurable composition onto the surface of the substrate and bringing them into direct contact with a liquid containing a planar superstrate, forming a planar liquid layer that typically solidifies under UV exposure, leaving a planar polymer surface after removal of the superstrate, which can be subjected to subsequent processing steps, such as baking, etching, and / or further deposition steps.
[0003] There is a need for improved IAP materials that provide smooth photocurable layers with high etch resistance. Summary of the Invention
[0004] In one embodiment, the photocurable composition can include a photocurable composition comprising a polymerizable material and a photoinitiator, wherein the polymerizable material has the formula (1): [ka] where R1, R2: -O-Si(CH3)3, alkyl, or aryl, or alkylaryl; R3, R4: -O-Si(CH3)3, or alkyl, or aryl, or alkylaryl; R5: C1-C5 alkyl, or aryl, or alkylaryl; R6: -R5-X, or X, or -O-Si(CH3)3, or alkyl, or aryl, or alkylaryl; X: acrylate or methacrylate; and n: 0-4, and the amount of silicon (Si) in the photocurable composition can be at least 15 wt % based on the total weight of the photocurable composition.
[0005] In one embodiment of the photocurable composition, the amount of Si can be at least 20 wt %, based on the total weight of the photocurable composition.
[0006] In a further embodiment, the molecular weight of the silicon-containing monomer can be at least 100 g / mol and up to 800 g / mol.
[0007] In another embodiment, the amount of the at least one silicon-containing monomer can be at least 60 wt % based on the total weight of the polymerizable material. In a particular embodiment, the amount of the at least one silicon-containing monomer can be at least 60 wt % and up to 85 wt % based on the total weight of the polymerizable material.
[0008] In further embodiments, the viscosity of the photocurable composition can be 20 mPa·s or less.
[0009] In another embodiment, the amount of polymerizable material can be at least 90% by weight, based on the total weight of the photocurable composition.
[0010] In a further embodiment, the photocurable composition can be essentially free of solvent.
[0011] In one embodiment of the photocurable composition, the at least one silicon-containing monomer can include at least two different silicon-containing monomers.
[0012] In embodiments, the at least one silicon-containing monomer is methacryloxymethyltris(trimethylsiloxane)silane (SiM1), 1,3-bis(3-methacryloxypropyl)tetrakis(trimethylsiloxy)disiloxane (SiM2), 3-acryloxypropyltris(trimethylsiloxy)silane (SiM3), (Methacryloxymethyl)bis(trimethylsiloxy)methylsilane (SiM4), 3-methacryloxypropylbis(trimethylsiloxy)methylsilane (SiM5), (3-acryloxypropyl)methylbis(trimethylsiloxy)silane (SiM6), methacryloxypropyltris(trimethylsiloxy)silane (SiM7), Acryloxymethyltrimethylsilane (SiM8), acryloxymethyltris(trimethylsiloxy)silane (SiM9), 1,3-bis[(acryloxymethyl)phenethyl]tetramethyldisiloxane (SiM10), or any combination thereof.
[0013] In certain embodiments, the at least one silicon-containing monomer can include methacryloxymethyltris(trimethylsiloxane)silane (SiM1), or 1,3-bis(3-methacryloxypropyl)tetrakis(trimethylsiloxy)disiloxane (SiM2), or 3-acryloxypropyl-tris(trimethylsiloxy)silane (SiM3), or any combination thereof.
[0014] In one embodiment, the photocurable composition can include at least one non-silicon-containing polymerizable monomer. In one aspect, the non-silicon-containing polymerizable monomer can include an acrylate monomer. In a particular aspect, the acrylate monomer can include benzyl acrylate (BA), isobornyl acrylate (IBOA), 1,5-pentanediol diacrylate (MPDA), dihydrodicyclopentadienyl acrylate (DCPA), tricyclodecane dimethanol diacrylate (A-DCP), 2-propenoic acid, 1-phenyl-1,2-ethanediyl ester (PHEDA), or any combination thereof.
[0015] In another embodiment, a laminate can include a substrate and a photocurable layer overlying the substrate, the photocurable layer being formed from the photocurable composition described above.
[0016] In one embodiment, a method of forming a photocurable layer on a substrate includes applying a layer of a photocurable composition onto the substrate, the photocurable composition comprising a polymerizable material and at least one photoinitiator, the polymerizable material having a structure represented by Formula (1): [ka] wherein R1, R2: -O-Si(CH3)3, or alkyl, or aryl, or alkylaryl; R3, R4: -O-Si(CH3)3, or alkyl, or aryl, or alkylaryl; R5: C1-C5 alkyl, or aryl, or alkylaryl; R6: -R5-X, or X, or -O-Si(CH3)3, or alkyl, or aryl, or alkylaryl; X: acrylate or methacrylate; n: 0-4, and the amount of silicon (Si) in the photocurable composition is at least 15 wt % based on the total weight of the photocurable composition; and the method includes contacting the photocurable composition with a template or superstrate, irradiating the photocurable composition with light to form a photocured layer, and removing the template or superstrate from the photocured layer.
[0017] In one embodiment of the method, the amount of Si can be at least 20 wt % based on the total weight of the photocurable composition.
[0018] In another embodiment of the method, the viscosity of the photocurable composition can be 20 mPa·s or less.
[0019] In a further embodiment of the method, the amount of polymerizable material can be at least 90% by weight, based on the total weight of the photocurable composition.
[0020] In another embodiment, a method of making an article includes applying a layer of a photocurable composition onto a substrate, the photocurable composition comprising a polymerizable material and at least one photoinitiator, the polymerizable material having a structure represented by Formula (1): [ka] wherein R1, R2: -O-Si(CH3)3, alkyl, aryl, or alkylaryl; R3, R4: -O-Si(CH3)3, alkyl, aryl, or alkylaryl; R5: C1-C5 alkyl, aryl, or alkylaryl; R6: -R5-X, or X, or -O-Si(CH3)3, or alkyl, aryl, or alkylaryl; X: acrylate or methacrylate; n: 0-4, and the amount of silicon (Si) in the photocurable composition can be at least 15 wt% based on the total weight of the photocurable composition; the method can include contacting the photocurable composition with a template or superstrate, irradiating the photocurable composition with light to form a photocurable layer, removing the template or superstrate from the photocurable layer, forming a pattern on the substrate, treating the substrate with the pattern formed during formation, and fabricating an article from the treated substrate during treatment. DETAILED DESCRIPTION OF THE INVENTION
[0021] The following description is provided to aid in understanding the teachings disclosed herein and focuses on specific implementations and embodiments of the teachings. This focus is provided to aid in explaining the teachings and should not be construed as a limitation on the scope or applicability of the teachings.
[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The materials, methods, and examples are illustrative only and are not intended to be limiting. To the extent not described herein, many details regarding specific materials and processing operations are conventional and can be found in texts and other sources within the scope of imprint and lithography technology.
[0023] As used herein, the terms "comprises," "comprising," "includes," "including," "has," "having," or any other variations thereof, are intended to cover inclusion without limitation. For example, a process, method, article, or apparatus that includes a list of features is not necessarily limited to only those features and may include other features not expressly recited or inherent in such process, method, article, or apparatus.
[0024] As used herein, unless clearly stated otherwise, "or" refers to "inclusive-or" rather than "exclusive-or." For example, the condition "A or B" means that any one of the following is true: A is true (or exists) and B is false (or does not exist), A is false (or does not exist) and B is true (or exists), and A and B are both true (or exist).
[0025] Additionally, the use of non-quantitative terms ("a" or "an") is used to describe elements and components described herein. This is done merely for convenience and to give a general sense of the scope of the invention. This description should be interpreted to include one or at least one, and the singular also includes the plural unless the context clearly indicates otherwise.
[0026] The present disclosure provides a photocurable composition comprising a polymerizable material and a photoinitiator, wherein the polymerizable material is a compound represented by Formula (1): [ka] wherein R1, R2: —O—Si(CH3)3, alkyl, aryl, or alkylaryl; R3, R4: —O—Si(CH3)3, alkyl, aryl, or alkylaryl; R5: C1-C5 alkyl, aryl, or alkylaryl; R6: —R5-X, or X, or —O—Si(CH3)3, or alkyl, aryl, or alkylaryl; X: acrylate or methacrylate; and n: 0 to 4. The amount of silicon (Si) in the photocurable composition can be at least 15 wt % based on the total weight of the photocurable composition.
[0027] As used herein, unless otherwise specified, the phrase "silicon-containing monomer" refers to a monomer conforming to the structure of formula (1).
[0028] In certain embodiments, the amount of silicon in the photocurable composition can be at least 16 wt%, e.g., at least 17 wt%, at least 18 wt%, at least 19 wt%, or at least 20 wt%, based on the total weight of the photocurable composition. In other embodiments, the amount of silicon in the photocurable composition can be 33 wt% or less, or 30 wt% or less, or 28 wt% or less, or 25 wt% or less.
[0029] In certain embodiments, the molecular weight of the silicon-containing monomer can be at least 100 g / mol, or at least 200 g / mol, or at least 300 g / mol, or at least 400 g / mol. In other embodiments, the molecular weight of the silicon-containing monomer can be 800 g / mol or less, or 700 g / mol or less, or 600 g / mol or less, or 500 g / mol or less, or 400 g / mol or less.
[0030] In further embodiments, the amount of the at least one silicon-containing monomer can be at least 60 wt%, for example, at least 65 wt%, or at least 70 wt%, or at least 80 wt%, or at least 90 wt%, or at least 95 wt%, or 100 wt%, based on the total weight of the polymerizable material. In other embodiments, the amount of the silicon-containing monomer can be 99 wt% or less, or 95 wt% or less, or 90 wt% or less, or 85 wt% or less, based on the total weight of the polymerizable material. In certain embodiments, the amount of the silicon-containing monomer can be at least 60 wt% and no more than 85 wt%, based on the total weight of the polymerizable material.
[0031] Non-limiting examples of the structure of the polymerizable monomer corresponding to the structure of formula (1) of the silicon-containing monomer are: Methacryloxymethyltris(trimethylsiloxane)silane (SiM1): [ka] 1,3-bis(3-methacryloxypropyl)tetrakis(trimethylsiloxy)disiloxane (SiM2): [ka] 3-acryloxypropyltris(trimethylsiloxy)silane (SiM3): [ka] (Methacryloxymethyl)bis(trimethylsiloxy)methylsilane (SiM4): [ka] 3-Methacryloxypropylbis(trimethylsiloxy)methylsilane (SiM5): [ka] (3-acryloxypropyl)methylbis(trimethylsiloxy)silane (SiM6): [ka] Methacryloxypropyltris(trimethylsiloxy)silane (SiM7): [ka] Acryloxymethyltrimethylsilane (SiM8): [ka] Acryloxymethyltris(trimethylsiloxy)silane (SiM9): [ka] or 1,3-bis[(acryloxymethyl)phenethyl]tetramethyldisiloxane (SiM10): [ka] It can be said that:
[0032] The photocurable compositions of the present disclosure can be designed to have low viscosities before curing. In one embodiment, the viscosity of the curable composition can be 30 mPa·s or less, or 25 mPa·s or less, or 20 mPa·s or less, or 15 mPa·s or less, or 10 mPa·s or less. In certain other embodiments, the viscosity can be at least 5 mPa·s. In particularly preferred aspects, the photocurable composition can have a viscosity of 5 mPa·s to 20 mPa·s or less. As used herein, all viscosity values refer to viscosities measured at a temperature of 23°C by the Brookfield method using a Brookfield viscometer.
[0033] In one embodiment, the polymerizable material of the photocurable composition can further include at least one non-silicon-containing polymerizable monomer, such as one or more monofunctional polymerizable monomers and / or one or more multifunctional polymerizable monomers.
[0034] In one embodiment, the non-silicon-containing polymerizable monomer can include an acrylate monomer. As used herein, the term acrylate monomer refers to both unsubstituted acrylates and alkyl-substituted acrylates, such as methacrylates. Non-limiting examples of the acrylate monomer can be benzyl acrylate (BA), isobornyl acrylate (IBOA), 1,5-pentanediol diacrylate (MPDA), dihydrodicyclopentadienyl acrylate (DCPA), tricyclodecane dimethanol diacrylate (A-DCP), 2-propenoic acid, 1-phenyl-1,2-ethanediyl ester (or phenylethanediol diacrylate) (PHEDA), bisphenol A dimethacrylate, m-xylylene diacrylate, neopentyl glycol diacrylate, or any combination thereof.
[0035] In further embodiments, the amount of the at least one silicon-free monomer can be at least 5 wt%, or at least 10 wt%, or at least 15 wt%, or at least 20 wt%, or at least 25 wt%, based on the total weight of the polymerizable material. In other embodiments, the amount of silicon-free monomer can be 40 wt% or less, or 35 wt% or less, or 30 wt% or less, or 25 wt% or less, or 20 wt% or less, based on the total weight of the polymerizable material.
[0036] The amount of polymerizable material in the photocurable composition can be at least 50% by weight, e.g., at least 60%, at least 70%, at least 80%, at least 90%, or at least 95% by weight, based on the total weight of the photocurable composition. In another embodiment, the amount of polymerizable material can be 99% by weight or less, e.g., 97% by weight or less, or 95% by weight or less, or 90% by weight or less, or 85% by weight or less, or 80% by weight or less, or 70% by weight or less. The amount of polymerizable material can be any value between the minimum and maximum values stated above. In certain embodiments, the amount of polymerizable material can be at least 70% by weight and no more than 98% by weight.
[0037] In one embodiment, the photocurable composition of the present disclosure can be essentially free of solvent. As used herein, unless otherwise specified, the term solvent refers to a compound that can dissolve or disperse polymerizable monomers but does not itself polymerize during photocuring of the photocurable composition. The term "essentially free of solvent" as used herein refers to an amount of solvent of 5% by weight or less, based on the total weight of the photocurable composition. In certain aspects, the amount of solvent can be 3% by weight or less, 2% by weight or less, or 1% by weight or less, based on the total weight of the photocurable composition, or the photocurable composition can be solvent-free except for unavoidable impurities.
[0038] In other specific embodiments, the photocurable composition can include a solvent in an amount of at least 5 wt%, or at least 8 wt%, or at least 10 wt%, or at least 15 wt%, or at least 20 wt%, based on the total weight of the photocurable composition. In other embodiments, the amount of solvent can be 30 wt% or less, or 20 wt% or less, or 15 wt% or less, or 10 wt% or less, or 5 wt% or less, or 3 wt% or less, based on the total weight of the photocurable composition.
[0039] One or more photoinitiators can be included in the photocurable composition to initiate photocuring of the composition upon exposure to light. In certain embodiments, curing can also be achieved by a combination of photocuring and thermal curing.
[0040] The photocurable composition may further contain one or more optional additives, non-limiting examples of which may be stabilizers, dispersants, solvents, surfactants, inhibitors, or any combination thereof.
[0041] The photocurable compositions of the present disclosure may be suitable for use in inkjet adaptive planarization (IAP) or nanoimprint lithography (NIL).
[0042] In one embodiment, the photocurable composition can be coated onto a substrate to form a photocured layer. As used herein, the combination of the substrate and the photocured layer overlying the substrate is referred to as a laminate.
[0043] Surprisingly, it has been observed that the photocurable composition of the present disclosure can be adapted so that the photocured layer formed therefrom can have high etching resistance. High etching resistance is an important property of resist materials in the fields of nanoimprint lithography (NIL) and inkjet adaptive planarization (IAP). For example, high etching resistance is desired to obtain good pattern transfer in the range below 100 nm or even below 20 nm. The photocurable composition can combine high etching resistance with low viscosity, fast curing speed, and good strength of the cured resist. Furthermore, the stability of the photocurable composition (no undesired curing reaction) can be observed for at least 3 months.
[0044] The present disclosure further relates to a method of forming a photocurable layer, which method can include applying a layer of the photocurable composition described above onto a surface of a substrate, contacting the photocurable composition with a template or superstrate, irradiating the photocurable composition with light to form the photocurable layer, and removing the template or superstrate from the photocurable layer.
[0045] To form the desired article, the substrate and solidified layer may be subjected to further processing, such as an etching process, to transfer an image to the substrate that corresponds to the pattern in one or both of the solidified layer and / or the patterned layer underlying the solidified layer. The substrate may be subjected to further steps and processes known in device (article) manufacturing, including, for example, curing, oxidation, layer formation, deposition, doping, planarization, etching, formable material removal, dicing, bonding, and packaging.
[0046] The photocurable layer can also be used as an insulating film between layers of semiconductor devices such as LSI, system LSI, DRAM, SDRAM, RDRAM or D-RDRAM, or as a resist film used in the semiconductor manufacturing process. [Example]
[0047] The following non-limiting examples illustrate the concepts described herein.
[0048] Example 1 photocurable composition Photocurable compositions were prepared containing various combinations and amounts of the following silicon-containing monomers: methacryloxymethyltris(trimethylsiloxane)silane (SiM1), 1,3-bis(3-methacryloxypropyl)tetrakis(trimethylsiloxy)disiloxane (SiM2), and 3-acryloxypropyl-tris(trimethylsiloxy)silane (SiM3). In addition, the following silicon-free polymerizable monomers were used in the compositions: dihydrodicyclopentadienyl acrylate (DCPA), benzyl acrylate (BZA), dipentaerythritol penta / hexaacrylate (DPHA), tricyclodecane dimethanol diacrylate (A-DCP), and 1-phenyl-1,2-ethanediyl ester (PHEDA). A detailed summary of the polymerizable monomers in each composition is provided in Table 1.
[0049] The photocurable compositions further contained one or more photoinitiators and surfactants, the types and amounts of which are also summarized in Table 1.
[0050] [Table 1]
[0051] Dry etching resistance Photocured films for etching resistance testing were prepared by printing resist films onto silicon wafers using a J-FIL Imprint Tool I300, which allowed the films to fully cure during UV exposure. The thickness of the cured resist films was approximately 100 nm.
[0052] For the measurement of etch resistance, dry etching under oxygen / argon atmosphere was performed using a Trion Oracle 3-Chamber Cluster System as the etching tool. Two different dry etching chemistries were tested: 1) etching with a combination of oxygen / argon gas (O2 / Ar) and 2) etching with a combination of chlorine gas and oxygen (Cl2 / O2).
[0053] The following etching conditions were applied: O2 / Ar-etching: O2: 2 sccm, Argon: 10 sccm, RF power: 45 watts, pressure: 10 mTorr, etching time: 72 seconds, ICP: 0 watts. Cl2 / O2-etching: Cl2: 54 sccm, O2: 9 sccm, RF power: 90 watts, pressure: 150 mTorr, etching time: 90 seconds, ICP: 0 watts.
[0054] Table 2 shows the measured etch rates, converted to nm / min, for photocured samples S1 (made with a resist composition containing 26.5 wt. % silicon), C1 (made with a resist composition containing 14.2 wt. % silicon), and C8 (made with a resist composition containing no silicon at all). Comparative composition C8 contained 36 parts IBOA, 21 parts DCPA, 24 parts BZA, and 20 parts SR247 (crosslinker), along with 3 parts photoinitiator (1 part Irgacure 907 and 2 parts Irgacure 651, BASF, USA), and 4 parts surfactant (2.7 parts FS2000M1 and 1.4 parts FS2000M2) added as a mold release agent. Composition C8 had a viscosity of 7.0 mPa·s at 23°C.
[0055] It can be seen that sample S1 had the best etch resistance for both O2 / Ar and Cl2 / O2 etching chemistries. A low Si content, such as sample C1, resulted in a lower etch resistance compared to sample S1. The lowest etch resistance (corresponding to the highest etch rate) was observed for sample C8, which did not contain any silicon.
[0056] [Table 2]
[0057] viscosity The measured viscosities for all samples shown in Table 1 show that even the representative samples S1, S2 and S3 have very low viscosities below 10 mPa·s.
[0058] Viscosity was measured at 23°C using a Brookfield viscometer LVDV-II+ Pro with a #18 spindle at 200 rpm. For viscosity tests, approximately 6-7 mL of sample liquid was added to the sample chamber, enough to cover the spindle head. For all viscosity tests, at least three measurements were taken and an average value was calculated.
[0059] Calculating silicon content The silicon content of the polymerizable material of the photocurable composition can be calculated using the following formula: Si (wt%) = [Σw i (n i M Si ) / M i )] × 100%, where M Si is the molecular weight of silicon, and M i is the molecular weight of each complete monomer, and n i is the molar amount of Si in each monomer, and w i is the molar amount of each monomer in the complete composition, e.g., w i =0.5 means that each monomer accounts for 50% by weight of the composition.
[0060] The details and descriptions of the embodiments set forth herein are intended to provide a general understanding of the structure of various embodiments. The details and descriptions are not intended to be an exhaustive or comprehensive description of all of the elements and features of apparatus and systems that use the structures or methods described herein. Separate embodiments may also be provided in combination in a single embodiment, and conversely, various features that are described for brevity in the context of a single embodiment may also be provided separately or in any subcombination. Furthermore, references to values presented in ranges include each and every value within the range. Many other embodiments may be apparent to those skilled in the art only after reading and understanding this specification. Other embodiments may be used to derive from the present disclosure, such that structural substitutions, logical substitutions, or other changes may be made without departing from the scope of the present disclosure. Accordingly, the present disclosure is to be considered illustrative, and not restrictive.
Claims
1. A photocurable composition comprising a polymerizable material and a photopolymerization initiator, The polymerizable material has the formula (1): 【Chemistry 1】 at least one silicon-containing monomer having the structure Here, R1, R2: —O—Si(CH 3 ) 3 , alkyl, aryl or alkylaryl R3, R4: -O-Si(CH 3 ) 3 , alkyl, aryl or alkylaryl R5:C 1 ~C 5 Alkyl, aryl, alkylaryl R6: —R5-X, or X, or —O—Si(CH 3 ) 3 , or alkyl, or aryl, or alkylaryl X: acrylate or methacrylate n: 0 to 4, A photocurable composition, wherein the amount of silicon (Si) in the photocurable composition is at least 15 wt % based on the total weight of the photocurable composition.
2. 10. The photocurable composition of claim 1, wherein the amount of Si is at least 20 wt. % based on the total weight of the photocurable composition.
3. 10. The photocurable composition of claim 1, wherein the silicon-containing monomer has a molecular weight of at least 100 g / mol and no more than 700 g / mol.
4. 10. The photocurable composition of claim 1, wherein the amount of the at least one silicon-containing monomer is at least 60 wt. % based on the total weight of the polymerizable material.
5. 5. The photocurable composition of claim 4, wherein the amount of the at least one silicon-containing monomer is at least 60% by weight and no more than 85% by weight, based on the total weight of the polymerizable material.
6. The photocurable composition according to claim 1 , wherein the viscosity of the photocurable composition is 20 mPa·s or less.
7. The photocurable composition of claim 1 , wherein the amount of polymerizable material is at least 90% by weight based on the total weight of the photocurable composition.
8. The photocurable composition of claim 1 , wherein the photocurable composition is essentially free of solvent.
9. The photocurable composition of claim 1 , wherein the at least one silicon-containing monomer comprises at least two different silicon-containing monomers.
10. the at least one silicon-containing monomer methacryloxymethyltris(trimethylsiloxane)silane (SiM1), 1,3-bis(3-methacryloxypropyl)tetrakis(trimethylsiloxy)disiloxane (SiM2), 3-acryloxypropyltris(trimethylsiloxy)silane (SiM3), (methacryloxymethyl)bis(trimethylsiloxy)methylsilane (SiM4), 3-methacryloxypropylbis(trimethylsiloxy)methylsilane (SiM5), (3-acryloxypropyl)methylbis(trimethylsiloxy)silane (SiM6), methacryloxypropyltris(trimethylsiloxy)silane (SiM7), acryloxymethyltrimethylsilane (SiM8), acryloxymethyltris(trimethylsiloxy)silane (SiM9), 1,3-bis[(acryloxymethyl)phenethyl]tetramethyldisiloxane (SiM10), 10. The photocurable composition of claim 1, wherein the photocurable composition is selected from the group consisting of:
11. 11. The photocurable composition of claim 10, wherein the at least one silicon-containing monomer comprises methacryloxymethyltris(trimethylsiloxane)silane (SiM1), 1,3-bis(3-methacryloxypropyl)tetrakis(trimethylsiloxy)disiloxane (SiM2), or 3-acryloxypropyl-tris(trimethylsiloxy)silane (SiM3), or any combination thereof.
12. The photocurable composition of claim 1 , wherein the polymerizable material further comprises at least one non-silicon-containing polymerizable monomer.
13. The photocurable composition of claim 12 , wherein the non-silicon-containing polymerizable monomer comprises an acrylate monomer.
14. 14. The photocurable composition of claim 13, wherein the acrylate monomer comprises benzyl acrylate (BA), isobornyl acrylate (IBOA), 1,5-pentanediol diacrylate (MPDA), dihydrodicyclopentadienyl acrylate (DCPA), tricyclodecane dimethanol diacrylate (A-DCP), 1-phenyl-1,2-ethanediyl ester (PHEDA), or any combination thereof.
15. A laminate comprising a substrate and a photocurable layer overlying the substrate, the photocurable layer being formed from the photocurable composition of claim 1.
16. 1. A method for forming a photocurable layer on a substrate, comprising: applying a layer of a photocurable composition onto a substrate; The photocurable composition contains a polymerizable material and at least one photopolymerization initiator, The polymerizable material has the formula (1): 【Chemistry 2】 at least one silicon-containing monomer having the structure Here, R1, R2: —O—Si(CH 3 ) 3 , alkyl, aryl or alkylaryl R3, R4: -O-Si(CH 3 ) 3 , alkyl, aryl or alkylaryl R5:C 1 ~C 5 Alkyl, aryl, alkylaryl R6: —R5-X, or X, or —O—Si(CH 3 ) 3 , or alkyl, or aryl, or alkylaryl X: acrylate or methacrylate n: 0 to 4, The amount of silicon (Si) in the photocurable composition is at least 15 wt %, based on the total weight of the photocurable composition; contacting the photocurable composition with a template or superstrate; irradiating the photocurable composition with light to form a photocured layer; removing the template or the superstrate from the photocurable layer; A method comprising:
17. 17. The method of claim 16, wherein the amount of Si is at least 20 wt. % based on the total weight of the photocurable composition.
18. 17. The method of claim 16, wherein the photocurable composition has a viscosity of 20 mPa·s or less.
19. 17. The method of claim 16, wherein the amount of polymerizable material is at least 90% by weight based on the total weight of the photocurable composition.
20. 1. A method of manufacturing an article, comprising: applying a layer of a photocurable composition onto a substrate; The photocurable composition contains a polymerizable material and at least one photopolymerization initiator, The polymerizable material has the formula (1): 【Transformation 3】 at least one silicon-containing monomer having the structure Here, R1, R2: —O—Si(CH 3 ) 3 , alkyl, aryl or alkylaryl R3, R4: -O-Si(CH 3 ) 3 , alkyl, aryl or alkylaryl R5:C 1 ~C 5 Alkyl, aryl, alkylaryl R6: —R5-X, or X, or —O—Si(CH 3 ) 3 , or alkyl, or aryl, or alkylaryl X: acrylate or methacrylate n: 0 to 4, The amount of silicon (Si) in the photocurable composition is at least 15 wt %, based on the total weight of the photocurable composition; contacting the photocurable composition with a template or superstrate; irradiating the photocurable composition with light to form a photocured layer; removing the template or the superstrate from the photocurable layer; forming a pattern on the substrate; treating the patterned substrate during said formation; producing an article from the processed substrate during said processing; A method comprising: