Charged particle beam irradiation apparatus and cable determination method

Abstract

To prevent erroneous connection between a deflector and a deflection amplifier.SOLUTION: The charged particle beam irradiation apparatus includes an emission portion configured to emit a charged particle beam, a deflector configured to deflect the charged particle beam, a column configured to house the emission portion and the deflector, a plurality of deflection amplifiers provided outside the column and configured to apply a deflection voltage to the deflector, a plurality of extra-column cables configured to connect the plurality of deflection amplifiers and a first connector provided in the column, and a plurality of intra-column cables configured to connect the first connector and the deflector. The plurality of in-lens-tube cables have different impedance changes from each other, and SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a charged particle beam irradiation device and a cable identification method. [Background technology]

[0002] As LSIs become more highly integrated, the circuit line width and metal wiring pitch of semiconductor devices have become finer year by year. To form these circuit patterns, a reduction projection exposure system is used to transfer a high-precision master pattern formed on quartz to a wafer using a laser such as ArF (optical lithography). In recent years, extreme ultraviolet (EUV) lithography, which uses extreme ultraviolet light, has begun to be adopted to form even finer patterns. EUV lithography uses a mask with a multilayer structure made of multiple materials. For both masks, the high-precision master pattern is produced using so-called electron beam lithography, in which a resist on a mask blank is selectively exposed to light using an electron beam lithography system to form the pattern.

[0003] In an electron beam lithography system, an electron beam is deflected by a deflector within the lens barrel and irradiated onto a desired position on a substrate to draw a pattern. The deflector is composed of multiple deflection plates, and a voltage output from a corresponding deflection amplifier is applied to each deflection plate. The same number of deflection amplifiers as the deflectors are provided outside the lens barrel, and the deflection plates and deflection amplifiers are connected by cables via connectors provided on the wall of the lens barrel.

[0004] Previously, the cables connecting each deflection plate to the connector were all identical in specifications and length. The cables connecting each deflection amplifier to the connector were also identical in specifications and length. In other words, there were no physical or electrical differences between the cables connected to each deflection plate. After the lens barrel was assembled, it was impossible to visually confirm which cable was connected to which deflection plate, nor could it be distinguished by TDR (Time Domain Reflectometry) measurements. Therefore, if the deflection amplifier was connected incorrectly, the output voltage of the deflection amplifier would not be applied to the correct deflection plate. The incorrect wiring was only discovered after the lithography system had been started up and the beam was emitted, resulting in a delay of several days and reducing productivity. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2014-529857 [Patent Document 2] Japanese Patent Application Laid-Open No. 2002-280863 [Patent Document 3] International Publication No. 2015 / 186429 Summary of the Invention [Problem to be solved by the invention]

[0006] An object of the present invention is to provide a charged particle beam irradiation device that can prevent incorrect wiring of deflection amplifiers, and a cable identification method that can identify which cable outside the column is connected to which cable inside the column. [Means for solving the problem]

[0007] A charged particle beam irradiation device according to one aspect of the present invention comprises an emitter that emits a charged particle beam, a deflector that deflects the charged particle beam, a lens barrel that houses the emitter and the deflector, a plurality of deflection amplifiers that are provided outside the lens barrel and apply a deflection voltage to the deflector, a plurality of lens barrel external cables that connect the plurality of deflection amplifiers to a first connector provided in the lens barrel, and a plurality of lens barrel internal cables that connect the first connector to the deflector, wherein the plurality of lens barrel internal cables have different impedance changes from one another.

[0008] A cable identification method according to one aspect of the present invention involves inputting a pulse signal from each end of the plurality of external cables of the charged particle beam irradiation device, measuring the reflected signal on the time axis, and determining which internal cable of the tube each external cable corresponds to based on the time at which the waveform of the reflected signal becomes distorted. [Effects of the Invention]

[0009] According to the present invention, it is possible to prevent incorrect wiring between deflection plates and deflection amplifiers, and it is also possible to determine which cable outside the lens barrel is connected to which cable inside the lens barrel. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a diagram illustrating the configuration of a drawing device according to an embodiment of the present invention. [Figure 2] FIG. 2 is a diagram illustrating each region. [Figure 3] FIG. 10 is a diagram illustrating an example of a connection between a deflection plate and a DAC amplifier. [Figure 4] 10A and 10B are diagrams showing the positions of connectors corresponding to each deflection plate. [Figure 5] FIG. 10 is a diagram showing an example of a TDR measurement result. [Figure 6] 1A and 1B show examples of cable crimping. [Figure 7] FIG. 10 is a diagram showing an example of a TDR measurement result. [Figure 8] 10A and 10B are diagrams showing examples of pressure-bonding points corresponding to the deflection plates. [Figure 9] FIG. 10 is a diagram illustrating an example of a connection between a deflection plate and a DAC amplifier. [Figure 10] 10A and 10B are diagrams showing modified examples of connectors provided on the lens barrel. DETAILED DESCRIPTION OF THE INVENTION

[0011] Charged particle beam irradiation apparatuses according to embodiments of the present invention will be described below with reference to the drawings. In the embodiments, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and an ion beam or the like may also be used. Furthermore, in the embodiments, a configuration of a drawing apparatus using a single beam will be described as an example of an irradiation apparatus, but a drawing apparatus using multiple beams or an inspection apparatus may also be used.

[0012] Fig. 1 is a conceptual diagram showing the configuration of a drawing device according to an embodiment of the present invention. In Fig. 1, drawing device 100 includes drawing unit 150 and control unit 160. Drawing device 100 is an example of a variable-shape drawing device.

[0013] The pattern writing unit 150 includes a lens barrel (electron beam column) 102 and a pattern writing chamber 103. Inside the lens barrel 102, there are arranged an electron gun 201, an illumination lens 202, a blanking deflector 212, a first shaping aperture substrate 203, a projection lens 204, a shaping deflector 205, a second shaping aperture substrate 206, an objective lens 207, a main deflector 208, and a sub-deflector 209. Inside the pattern writing chamber 103, there is arranged an XY stage 105. On the XY stage 105, there is arranged a substrate 101, such as a mask coated with resist and to be patterned. The substrate 101 is an exposure mask used in manufacturing a semiconductor device, a mask blank coated with resist and on which nothing is yet patterned, or the like.

[0014] The control unit 160 has a control computer 110, a memory 111, a deflection control circuit 120, a control circuit 122, DAC (digital-analog converter) amplifiers 132 and 134, and storage devices 140 and 142 such as magnetic disk drives. The DAC amplifiers 132 and 134 are connected to the deflection control circuit 120.

[0015] The DAC amplifier 132 is connected to the sub-deflector 209. The DAC amplifier 134 is connected to the main deflector 208.

[0016] The deflection control circuit 120 outputs corresponding digital control signals to the DAC amplifiers 132 and 134. Each DAC amplifier then converts the digital signal into an analog signal, amplifies it, and outputs it as a deflection voltage. The output of the DAC amplifier 134 is applied to the main deflector 208 as a deflection voltage for main deflection. The output of the DAC amplifier 132 is applied to the sub-deflector 209 as a deflection voltage for sub-deflection. The electron beam is deflected by these deflection voltages. The control circuit 122 controls the operation of the drawing unit 150 under the control of the drawing control unit 52 in the control computer 110.

[0017] A data processing unit 50 and a drawing control unit 52 are arranged within the control computer 110. Each "unit" such as the data processing unit 50 and the drawing control unit 52 has a processing circuit. The processing circuit includes, for example, an electric circuit, a computer, a processor, a circuit board, a quantum circuit, or a semiconductor device. Each "unit" may use a common processing circuit (the same processing circuit) or different processing circuits (separate processing circuits). Information input / output to / from the data processing unit 50 and the drawing control unit 52 and information being calculated are stored in the memory 111 each time.

[0018] Data of a chip pattern to be written (chip data) is input from outside the writing apparatus 100 and stored in the storage device 140. The chip data defines a graphic code indicating the type of graphic pattern to be written, placement coordinates, dimensions, etc. In addition, irradiation amount information may be defined within the same data. Alternatively, the irradiation amount information may be input as separate data.

[0019] FIG. 2 is a conceptual diagram for explaining each region. In FIG. 2, the writing region 10 on the substrate 101 is virtually divided into a plurality of stripe regions 20 in the shape of stripes, for example, in the y direction, by the deflection width of the main deflector 208. The main deflector 208 deflects light within a main deflection region 22 surrounded by the deflection width of the main deflector 208 in the x and y directions. Each stripe region 20 is virtually divided into a mesh shape by the deflection size of the sub-deflector 209, thereby generating a plurality of sub-fields (SFs) 30 (small regions). In the example of FIG. 2, shot figures 42, 44, and 46 are written at the shot positions of a certain SF 30.

[0020] A digital signal for blanking control is output from the deflection control circuit 120 to a DAC amplifier (not shown) for blanking control. The DAC amplifier for blanking control converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the blanking deflector 212. The blanking deflector 212 deflects the electron beam 200 and switches the beam on and off.

[0021] A digital signal for shaping deflection control is output from the deflection control circuit 120 to a DAC amplifier (not shown) for shaping deflection control. The DAC amplifier for shaping deflection control converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the shaping deflector 205. The shaping deflector 205 deflects the electron beam 200 to control the position at which the electron beam 200, having passed through the first shaping aperture substrate 203, passes through the opening of the second shaping aperture substrate 206, thereby variably shaping the beam for each shot.

[0022] The deflection control circuit 120 outputs a digital signal for controlling the main deflection (main deflection data) to the DAC amplifier 134. The DAC amplifier 134 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the main deflector 208. The main deflector 208 deflects the beam of each shot to a reference position of a predetermined subfield (SF) 30 that is virtually divided into a mesh shape.

[0023] The deflection control circuit 120 outputs a digital signal for sub-deflection control (sub-deflection data) to the DAC amplifier 132. The DAC amplifier 132 converts the digital signal into an analog signal, amplifies it, and applies it as a deflection voltage to the sub-deflector 209. The sub-deflector 209 deflects the beam of each shot to each shot position within a predetermined sub-field (SF) that is virtually divided into a mesh shape.

[0024] The drawing apparatus 100 uses a multi-stage deflector to perform drawing processing for each stripe region 20. Here, as an example, a two-stage deflector including a main deflector 208 and a sub-deflector 209 is used.

[0025] While the XY stage 105 continuously moves, for example, in the -x direction, writing proceeds in the x direction for the first stripe region 20. When writing each stripe region 20 once without multiple writing, the operation is, for example, as follows. After writing the first stripe region 20, writing proceeds in the same way or in the opposite direction for the second stripe region 20. Thereafter, writing proceeds in the same way for the third and subsequent stripe regions 20. When writing each stripe region 20, the main deflector 208 sequentially deflects the electron beam 200 to the reference position (e.g., the center) of the SF 30 so as to follow the movement of the XY stage 105. Furthermore, the sub-deflector 209 deflects the electron beam 200 from the reference position of each SF 30 to each shot position of the beam to be irradiated within that SF 30. In this way, the main deflector 208 and the sub-deflector 209 have deflection regions of different sizes. SF30 is the smallest deflection area among the deflection areas of the multiple stages of deflectors.

[0026] The electron beam 200 emitted from the electron gun 201 (emission unit) is controlled by the blanking deflector 212 through a deflection signal from a blanking DAC amplifier. The blanking deflector 212 controls the electron beam 200 to illuminate the entire rectangular aperture of the first shaping aperture substrate 203 in the beam-on state, and deflects the entire beam so that the first shaping aperture substrate 203 blocks the entire beam in the beam-off state. The electron beam 200 passing through the first shaping aperture substrate 203 from the beam-off state to the beam-on state and then to the beam-off state constitutes one electron beam shot. The blanking deflector 212 controls the direction of the passing electron beam 200 to alternately generate beam-on and beam-off states. For example, no voltage is applied in the beam-on state, and a voltage is applied to the blanking deflector 212 in the beam-off state. The dose of the electron beam 200 irradiated onto the substrate 101 per shot is adjusted during the irradiation time of each shot.

[0027] An electron beam 200 controlled to be beam-on illuminates the entire first shaping aperture substrate 203, which has a rectangular opening, via an illumination lens 202. The electron beam 200 is shaped into a rectangle by the first shaping aperture substrate 203. The electron beam 200, which is a first aperture image that has passed through the first shaping aperture substrate 203, is projected onto a second shaping aperture substrate 206 by a projection lens 204. The first aperture image on the second shaping aperture substrate 206 is deflection-controlled by a shaping deflector 205, making it possible to change the beam shape and dimensions (perform variable shaping). Variable shaping is performed for each shot, and the beam can be shaped into a different beam shape and dimensions for each shot, for example. Then, the electron beam 200 of the second aperture image that passes through the second shaping aperture substrate 206 is focused by the objective lens 207, deflected by the main deflector 208 and the sub-deflector 209, and irradiated onto the desired position of the substrate 101 placed on the continuously moving XY stage 105.

[0028] 1 shows a case where multi-stage deflection (main and sub) is used for position deflection. In this case, the main deflector 208 deflects the electron beam 200 of the corresponding shot while following the stage movement to the reference position of SF 30, and the sub deflector 209 deflects the beam of the corresponding shot to each irradiation position within SF. By repeating this operation and connecting the shot figures of each shot, the desired figure pattern is written.

[0029] The main deflector 208 is composed of multiple deflection plates, and DAC amplifiers 134 (deflection amplifiers) equal in number to the deflection plates are provided outside the lens barrel 102, and each DAC amplifier 134 outputs and applies a deflection voltage to the corresponding deflection plate via a cable.

[0030] For example, as shown in FIG. 3, main deflector 208 has eight deflection plates 208a to 208h arranged at equal intervals on the same circumference, and DAC amplifiers 134a to 134h corresponding to deflection plates 208a to 208h are provided outside lens barrel 102.

[0031] A partition wall 107 is provided inside the lens barrel 102 to separate a vacuum region R1 and an atmospheric pressure region R2, and the deflection plates 208a to 208h are arranged in the vacuum region R1 inside the partition wall 107. One ends of cables 60a to 60h are connected to the deflection plates 208a to 208h, respectively.

[0032] The partition wall 107 is provided with connectors 90a to 90h (second connectors) corresponding to the deflection plates 208a to 208h, respectively, which connect the other ends of the cables 60a to 60h in the vacuum region R1 inside the partition wall 107 to one ends of the cables 70a to 70h in the atmospheric pressure region R2 outside the partition wall 107 in a one-to-one relationship.

[0033] Connectors 92 and 94 (first connectors) are provided on the wall surface of the lens barrel 102, and connect the other ends of the cables 70a-70h inside the lens barrel 102 to one ends of the cables 80a-80h (external lens barrel cables) outside the lens barrel 102 in a one-to-one relationship. In the example of Fig. 3, connector 92 connects the other ends of the cables 70a-70d to one ends of the cables 80a-80d. Connector 94 connects the other ends of the cables 70e-70h to one ends of the cables 80e-80h.

[0034] In the example shown in Figure 3, two connectors 92, 94 are provided on the lens barrel 102, and each connector is used to connect four cables, but the lens barrel 102 may be provided with one connector, or three or more connectors.

[0035] The other ends of the cables 80a to 80h are connected to the DAC amplifiers 134a to 134h. The deflection voltages output from the DAC amplifiers 134a to 134h are applied to the deflection plates 208a to 208h via three cables consisting of the cables 80a to 80h, 70a to 70h, and 60a to 60h. For example, the deflection voltage output from the DAC amplifier 134a is applied to the deflection plate 208a via three cables consisting of the cables 80a, 70a, and 60a. The cables 80a to 80h, 70a to 70h, and 60a to 60h all have the same specifications (material, diameter), and for example, coaxial cables can be used.

[0036] The cable lengths (total lengths of the three cables) from the DAC amplifiers 134a to 134h to the deflection plates 208a to 208h are all the same, so signals output from the DAC amplifiers 134a to 134h at the same timing reach the deflection plates 208a to 208h at the same timing.

[0037] Cables 80a-80h outside barrel 102 are all the same (equivalent) length, and the cable lengths (total lengths of two cables) of the cables inside the barrel from connectors 92, 94 to deflection plates 208a-208h are also all the same (equivalent). In this embodiment, cables 60a-60h are different in length, and cables 70a-70h are also different in length.

[0038] For example, cables 60a and 60b have different lengths, and cables 70a and 70b also have different lengths. The total length of cables 60a and 70a is the same as the total length of cables 60b and 70b.

[0039] Therefore, as shown in FIG. 4, the connectors 90a to 90h corresponding to the DAC amplifiers 134a to 134h are located at different positions on the in-lens-barrel cables between the connectors 92, 94 and the deflection plates 208a to 208h.

[0040] Because deflection plates 208a-208h can be visually observed when assembling lens barrel 102, deflection plates 208a-208h can be reliably connected to connectors 90a-90h via corresponding cables 60a-60h. Similarly, connectors 90a-90h can be reliably connected to connectors 92, 94 via corresponding cables 70a-70h.

[0041] After assembling the lens barrel 102, one end of the cables 80a to 80h is connected to the connectors 92, 94, and the other end is connected to the DAC amplifiers 134a to 134h. At this time, it is necessary to determine which deflection plate each cable is connected to so that the output signals of the DAC amplifiers 134a to 134h reach the corresponding deflection plates 208a to 208h.

[0042] After the lens barrel 102 is assembled, the inside of the lens barrel 102 cannot be seen with the naked eye. Using time domain reflectometry (TDR), a pulse signal is input from the end of each cable 80a-80h (the end connected to the DAC amplifier), and the reflected signal is measured over time. The waveform of the reflected signal is distorted due to impedance changes at the connector. As described above, the positions of the connectors 90a-90h corresponding to the DAC amplifiers 134a-134h are different between the connectors 92, 94 and the deflection plates 208a-208h. Therefore, as shown in Figure 5, the position where the waveform of the reflected signal becomes distorted (the time elapsed since signal transmission) differs for each cable inside the telescope tube.

[0043] Based on the position where the waveform of the reflected signal is disturbed, it is possible to determine which deflection plate the cable is connected to, and to connect the DAC amplifiers 134a to 134h to the correct cables 80a to 80h.

[0044] In the above embodiment, an example was described in which the combination of lengths of the cables 60a to 60h and 70a to 70h was changed to change the position where the waveform is disturbed due to impedance changes in the TDR measurement results. However, instead of or in addition to changing the combination of lengths of the cables 60a to 60h and 70a to 70h, the number or shape of the connectors may be changed.

[0045] For example, a third connector is added between deflection plate 208a and connector 90a, and cable 60a is divided into two parts, which are connected by the third connector. This means that there are three connectors on the cable connected to deflection plate 208a, and the position and frequency at which the waveform is distorted due to impedance changes in the reflected signal of the TDR measurement changes, which can be used to identify the deflection plate.

[0046] Furthermore, for example, by changing the shape of the connector 90b, the magnitude and length of the waveform disturbance in the reflected signal of the TDR measurement changes, which can be used to distinguish the deflection plate.

[0047] Impedance can be changed by attaching a crimping ring R as shown in Fig. 6 to the cable and crushing it into a hexagonal shape with a crimping tool. As shown in Fig. 7, the waveform of the reflected signal in the TDR measurement is disturbed at the position where the crimping ring R is attached. Therefore, for example, as shown in Fig. 8, by changing the position and number of crimping rings R attached to the in-tube cables (cables 60a-60h, 70a-70h), it is possible to identify the deflection plates 208a-208h connected to the cables.

[0048] In addition, by changing the width and amount of compression of the crimping ring R, the magnitude and length of the waveform distortion in the reflected signal of the TDR measurement changes, so this can also be used to distinguish the deflection plate.

[0049] The cable may be crimped using a crimping tool without using the crimping ring R.

[0050] The deflection plates may be identified by appropriately combining different lengths of the cables 60a to 60h and 70a to 70h, different numbers and shapes of connectors, and different positions and numbers of cable crimps.

[0051] In the above embodiment, an example has been described in which the deflection plates 208a to 208h of the main deflector 208 are identified, but the present invention is also applicable to identifying a plurality of deflection plates that constitute the sub-deflector 209, the shaping deflector 205, and the like.

[0052] In the above embodiment, an example was described in which the interior of the lens barrel 102 was divided into a vacuum region R1 and an atmospheric pressure region R2 by the partition wall 107. However, as shown in FIG. 9, the partition wall 107 may be omitted. In this case, the connectors 92, 94 provided on the wall surface of the lens barrel 102 are connected to each of the deflection plates 208a-208h by an in-lens barrel cable, and the connectors 92, 94 are connected to the DAC amplifiers 134a-134h by an external lens barrel cable (cables 80a-80h). The in-lens barrel cable may be composed of multiple split cables connected by connectors, or may be crimped at one or more locations. The split cables may also have crimp locations. By making the number and positions of the connectors that divide the in-lens barrel cable different from each other and the positions and number of crimps different from each other, the deflection plates 208a-208h can be identified based on the reflected signal from the TDR measurement. Making the connector or crimping position different means providing the connector or crimping point at a position on the signal path of the in-tube cable from connectors 92, 94 to deflection plates 208a to 208h where the cable length from connectors 92, 94 (or deflection plates 208a to 208h) is different.

[0053] Furthermore, in the combinations of external and internal cables that make up the signal paths from the DAC amplifiers 134a-134h to the deflection plates 208a-208h, the positions of the connectors 92, 94 on the signal paths, i.e., the ratio of the lengths of the external and internal cables, may be different. In this case, it is preferable that the total lengths of the external and internal cables are the same (equivalent). In this configuration, the TDR measurement results show that the time from waveform disturbance caused by the connectors 92, 94 to waveform disturbance caused by the deflection plates 208a-208h differs, making it possible to identify the deflection plates 208a-208h connected to the cables.

[0054] 10, connector 92 provided on lens barrel 102 may have cable connection portion 92a to which ends of cables 80a-80d are connected outside lens barrel 102, cable connection portion 92b to which ends of cables 70a-70d are connected inside lens barrel 102, and connection portion 92c that passes through lens barrel 102 and connects cable connection portion 92a and cable connection portion 92b. The same applies to connector 94.

[0055] In the above embodiment, the deflectors such as the main deflector 208 and the sub-deflector 209 may be electromagnetic deflectors.

[0056] The present invention is not limited to the above-described embodiments, and the components can be modified and embodied in practice without departing from the spirit of the invention. Furthermore, various inventions can be created by appropriately combining multiple components disclosed in the above-described embodiments. For example, some components may be omitted from all the components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. [Explanation of symbols]

[0057] 100 drawing device 101 Substrate 120 Deflection control circuit 132, 134, 134a~134h DAC amplifier 200 electron beam 208 Main deflector 208a~208h Deflection plate 209 Sub deflector

Claims

1. an emission section that emits a charged particle beam; a deflector for deflecting the charged particle beam; a lens barrel that houses the emission section and the deflector; a plurality of deflection amplifiers provided outside the lens barrel and applying a deflection voltage to the deflector; a plurality of external cables for connecting the plurality of deflection amplifiers to a first connector provided on the lens barrel; a plurality of in-barrel cables connecting the first connector and the deflector; Equipped with The plurality of in-barrel cables have different impedance changes.

2. an emission section that emits a charged particle beam; a deflector for deflecting the charged particle beam; a lens barrel that houses the emission section and the deflector; a plurality of deflection amplifiers provided outside the lens barrel and applying a deflection voltage to the deflector; a plurality of external cables for connecting the plurality of deflection amplifiers to a first connector provided on the lens barrel; a plurality of in-barrel cables connecting the first connector and the deflector; Equipped with each of the plurality of in-barrel cables includes a plurality of split cables connected by a second connector; The second connectors of the plurality of in-barrel cables are different in shape, number, or position from one another.

3. The charged particle beam irradiation device according to claim 2 , wherein the split cable has a crimped portion.

4. a partition wall that divides the interior of the lens barrel into a vacuum region and an atmospheric pressure region; 3. The charged particle beam irradiation equipment according to claim 2, wherein the second connector is provided in the partition wall.

5. an emission section that emits a charged particle beam; a deflector for deflecting the charged particle beam; a lens barrel that houses the emission section and the deflector; a plurality of deflection amplifiers provided outside the lens barrel and applying a deflection voltage to the deflector; a plurality of external cables for connecting the plurality of deflection amplifiers to a first connector provided on the lens barrel; a plurality of in-barrel cables connecting the first connector and the deflector; Equipped with each of the plurality of in-barrel cables has a crimping point; The number or positions of the crimped portions differ from one another in the plurality of in-barrel cables.

6. 6. The charged particle beam irradiation device according to claim 5, wherein a crimping ring is attached to the crimped portion.

7. an emission section that emits a charged particle beam; a deflector for deflecting the charged particle beam; a lens barrel that houses the emission section and the deflector; a plurality of deflection amplifiers provided outside the lens barrel and applying a deflection voltage to the deflector; a plurality of external cables connecting the plurality of deflection amplifiers to a first connector provided on the lens barrel; a plurality of in-barrel cables connecting the first connector and the deflector; Equipped with a first connector disposed at a position different from one another in a plurality of signal paths from the plurality of deflection amplifiers to the deflector, the signal paths including the external cable and the internal cable;

8. 8. The charged particle beam irradiation system according to claim 1, wherein the external cable and the internal cable are coaxial cables.

9. a step of inputting a pulse signal from each end of the plurality of external cables of the charged particle beam irradiation apparatus according to claim 1, 2, 5 or 7, and measuring a reflected signal on a time axis; A cable identification method for identifying which internal cable of the telescope corresponds to each external cable of the telescope based on the time during which the waveform of the reflected signal is distorted.

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