Ultrasound transducers, backing structures and related methods

Abstract

An ultrasonic transducer is provided having a sample contact portion and a rear portion opposite the sample contact portion.SOLUTION: The ultrasonic transducer 500 includes a piezoelectric material 502 in acoustic communication with the sample and a backing structure 508 in acoustic communication with the piezoelectric material. The backing structure reflects acoustic energy toward the sample contact portion and away from the rear of the ultrasonic transducer. The backing structure includes a low acoustic impedance layer 512 and a high acoustic impedance layer 514. The transducer may also include a second double layer mismatched backing material 516. The second double layer mismatched backing includes a second low acoustic impedance layer 518 and a second high acoustic impedance layer 520.SELECTED DRAWING: Figure 18

Description

[Technical Field]

[0001] The technical field relates generally to the field of acoustic energy, and more particularly to ultrasonic transformers. The present invention relates to transducers, related devices, apparatus, methods and techniques. [Background technology]

[0002] Piezoelectric acoustic transducers are widely used in many industries and for a wide variety of applications. For example, piezoelectric ultrasound transducers are used in medical applications, such as diagnostic imaging and / or therapy. Other applications include ultrasonic non-destructive testing, ultrasonic machining and ultrasonic Applications include, but are not limited to, welding. Piezoelectric ultrasonic transducers are It converts energy into mechanical energy and also converts sound waves into electrical signals and vice versa. Summary of the Invention [Problem to be solved by the invention]

[0003] There remains a need for techniques, apparatus, devices and methods that alleviate or mitigate the problems of the prior art is. [Means for solving the problem]

[0004] According to one aspect, there is provided an ultrasonic transducer, the ultrasonic transducer comprising: a piezoelectric material having a front surface and a back surface configured to be in acoustic communication with the sample; the piezoelectric material; a piezoelectric element disposed on the rear surface of the piezoelectric material and configured to reflect acoustic energy toward the front surface of the piezoelectric material; a backing structure configured to reflect heat and that is thermally and electrically conductive, The first two-layer mismatched backing material is a first graphite layer; and a layer of tungsten in contact with the first graphite layer; the first two-layered mismatched backing material having a second two-layer mismatched backing material in contact with the first two-layer mismatched backing material; , a second graphite layer; and a copper layer in contact with the second graphite layer; the second two-layered mismatched backing material having the backing structure comprising: a heat sink in thermal contact with the backing structure; and one or more electrodes in electrical communication with the piezoelectric material; Equipped with.

[0005] In some embodiments, the heat sink comprises at least one channel, is configured to receive and circulate a heat transfer fluid within the channel.

[0006] In some embodiments, the heat transfer fluid is a liquid.

[0007] In some embodiments, the heat sink is electrically isolated from the backing structure.

[0008] In some embodiments, the ultrasonic transducer has a dynamic range associated with its operating wavelength (λo). The first graphite layer is operable at a predetermined operating frequency, and the first graphite layer is in contact with the first graphite layer. The tungsten layer, the second graphite layer, and the copper layer are approximately λo / 4 or λo The thickness corresponds to an odd multiple of / 4.

[0009] In some embodiments, the piezoelectric material is configured to resonate at a half-wavelength at the operating frequency. .

[0010] In some embodiments, the ultrasonic transducer comprises a piezoelectric material and a backing structure. a single mismatching layer disposed between the piezoelectric material and the backing structure; The single mismatched layer is acoustically coupled, and the acoustic impedance of the piezoelectric material is relatively lower than that of the piezoelectric material. With a high corresponding acoustic impedance, the piezoelectric material will have a quarter-wave resonance at the operating frequency. It is configured to:

[0011] In some embodiments, the piezoelectric material has a resonant frequency, which is proportional to a resonant wavelength λr. Relatedly, the single mismatch layer has a thickness less than 2λr / 5 relative to the resonant frequency of the piezoelectric material. .

[0012] In some embodiments, the single mismatch layer has a thickness of about λr / 10 to about λr / 20. .

[0013] In some embodiments, the single mismatch layer is made of tungsten.

[0014] In some embodiments, the piezoelectric material has an acoustic impedance of about 27.5 Megarayleigh. It has acoustic characteristics.

[0015] In some embodiments, the first graphite layer has an acoustic impedance of about 5.1 Megarayleigh. Have a dance.

[0016] In some embodiments, the first graphite layer has a thickness of about 1.5 mm to about 1.6 mm. Has.

[0017] In some embodiments, the tungsten layer has an acoustic impedance of about 100 Megarayleigh. It has

[0018] In some embodiments, the tungsten layer has a thickness of about 2.6 mm to about 2.7 mm. do.

[0019] In some embodiments, the second graphite layer has an acoustic impedance of about 5.1 Megarayleigh. Have a dance.

[0020] In some embodiments, the second graphite layer has a thickness of about 1.5 mm to about 1.6 mm. Has.

[0021] In some embodiments, the copper layer has an acoustic impedance of about 41.5 MRayleigh. do.

[0022] In some embodiments, the copper layer has a thickness of about 2.5 mm to about 2.6 mm.

[0023] In some embodiments, the piezoelectric material is a polarized composite piezoelectric disk.

[0024] In some embodiments, the polarized composite piezoelectric disc is in a 1_3 configuration.

[0025] In some embodiments, the piezoelectric material is a composite of PZT4 and the piezoelectric material is 200 μm thick. The 1000 μm × 1000 μm pillars are separated by kerfs of approximately 1 m. It is cut at a pitch of 200 μm.

[0026] In some embodiments, the piezoelectric material has a thickness of about 2.35 mm to about 2.45 mm. .

[0027] In some embodiments, the kerfs are filled with a composite filler, the composite filler being in an epoxy. The hafnium dioxide particles are doped with .

[0028] In some embodiments, the composite filler is in the 0_3 configuration.

[0029] In some embodiments, the epoxy is Epo-Tek® 301.

[0030] In some embodiments, the piezoelectric material comprises a piezoelectric layer.

[0031] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. A conductive structure is provided.

[0032] In some embodiments, the thermally conductive structure is electrically insulated from the backing structure.

[0033] In some embodiments, the thermally conductive structure is a layer of AlN or a layer of beryllium oxide. do.

[0034] In some embodiments, the thermally conductive structure extends over the side portions of the backing structure. There are.

[0035] In some embodiments, the thermally conductive structure includes at least one It has conductive vias.

[0036] In some embodiments, the ultrasonic transducer comprises a piezoelectric material, a backing structure, and and a control unit electrically connected to at least one of the one or more electrodes.

[0037] In some embodiments, one or more electrodes are applied to the piezoelectric material through a backing structure. electrically connected.

[0038] In some embodiments, the ultrasonic transducer includes a wear layer that is wear-resistant. .

[0039] In some embodiments, the wear layer is made of titanium.

[0040] In some embodiments, the ultrasound transducer has a diameter of about 50 mm.

[0041] In some embodiments, the backing structure further reflects acoustic energy in phase. It is configured to fire.

[0042] In some embodiments, the backing structure further comprises a desired The system is configured to disperse unwanted acoustic reflections spatially and temporally.

[0043] According to one aspect, there is provided an ultrasonic transducer, the ultrasonic transducer comprising: a piezoelectric material having a front surface and a back surface, the piezoelectric material being configured to be in acoustic communication with the sample; and, a piezoelectric material disposed on the rear surface thereof and directing acoustic energy toward the front surface thereof; a backing structure configured to reflect light, a first two-layered irregularity including a first low acoustic impedance layer and a first high acoustic impedance layer; A composite backing material, and a second low acoustic impedance layer and a second low acoustic impedance layer connected to the first two-layer matching backing material; a second two-layer mismatched backing material including a high acoustic impedance layer; the backing structure having Prepare.

[0044] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. At least one of a heat sink or a thermally conductive layer acoustically matched to the piezoelectric material is provided.

[0045] In some embodiments, the ultrasonic transducer is in electrical communication with the piezoelectric material. It has one or more electrodes.

[0046] In some embodiments, the backing structure is both thermally and electrically conductive.

[0047] In some embodiments, the ultrasonic transducer comprises a pre-assembled electrical circuit, The electrical circuit is in electrical communication with the top of the backing structure and, therefore, is in electrical communication with the piezoelectric material. Pass.

[0048] In some embodiments, the pre-assembled electrical circuitry may include a printed circuit board, an interposer, an assembly, or the like. The device includes at least one of an integrated circuit and an application specific integrated circuit.

[0049] In some embodiments, the heat sink has at least one channel, is configured to receive and circulate a heat transfer fluid within the channel.

[0050] In some embodiments, the heat transfer fluid is a liquid.

[0051] In some embodiments, the heat sink is electrically isolated from the backing structure.

[0052] In some embodiments, the ultrasonic transducer has a dynamic range associated with its operating wavelength (λo). It is capable of operating at the operating frequency and First low acoustic impedance layer, first high acoustic impedance layer, second low acoustic impedance layer The first high acoustic impedance layer and the second high acoustic impedance layer are approximately λo / 4 or λo / 4 odd-angle layers, respectively. It has a thickness corresponding to several times the thickness.

[0053] In some embodiments, the piezoelectric material is configured to resonate at a half-wavelength at the operating frequency. .

[0054] In some embodiments, the ultrasonic transducer comprises a piezoelectric material and a backing structure. a single mismatched layer disposed between the piezoelectric material and the backing structure; The single mismatched layer is in acoustic communication with the piezoelectric material, and the acoustic impedance of the single mismatched layer is relatively higher than that of the piezoelectric material. and the piezoelectric material has a quarter-wave resonance at the operating frequency. It is configured to:

[0055] In some embodiments, the piezoelectric material has a resonant frequency, which is proportional to a resonant wavelength λr. Relatedly, the single mismatch layer has a thickness less than 2λr / 5 relative to the resonant frequency of the piezoelectric material. .

[0056] In some embodiments, the single mismatch layer has a thickness of about λr / 10 to about λr / 20. .

[0057] In some embodiments, the single mismatch layer is made of tungsten.

[0058] In some embodiments, the piezoelectric material has an acoustic impedance of about 27.5 Megarayleigh. It has acoustic characteristics.

[0059] In some embodiments, the piezoelectric material is a polarized composite piezoelectric disk.

[0060] In some embodiments, the polarized composite piezoelectric disc has a thickness of about 2.4 mm. .

[0061] In some embodiments, the polarized composite piezoelectric disc is in a 1_3 configuration.

[0062] In some embodiments, the piezoelectric material is a composite of PZT4 and the piezoelectric material is 200 μm thick. The 1000 μm × 1000 μm pillars are separated by kerfs of approximately 1 m. It is cut at a pitch of 200 μm.

[0063] In some embodiments, the kerfs are filled with a composite filler, the composite filler being in an epoxy. The hafnium dioxide particles are doped with .

[0064] In some embodiments, the composite filler is in the 0_3 configuration.

[0065] In some embodiments, the epoxy is Epo-Tek® 301.

[0066] In some embodiments, the piezoelectric material comprises a piezoelectric layer.

[0067] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. A conductive structure is provided.

[0068] In some embodiments, the thermally conductive structure is electrically insulated from the backing structure.

[0069] In some embodiments, the thermally conductive structure is a layer made of AlN or a layer made of beryllium oxide. be.

[0070] In some embodiments, the thermally conductive structure extends over the side portions of the backing structure. There are.

[0071] In some embodiments, the thermally conductive structure includes at least one It has conductive vias.

[0072] In some embodiments, the ultrasonic transducer comprises a piezoelectric material and a backing structure. and a control unit electrically connected to at least one of the above.

[0073] In some embodiments, one or more electrodes are applied to the piezoelectric material through a backing structure. electrically connected.

[0074] In some embodiments, the ultrasonic transducer comprises a wear layer that is wear resistant. do.

[0075] In some embodiments, the wear layer is made of titanium.

[0076] In some embodiments, the ultrasound transducer has a diameter of about 50 mm.

[0077] In some embodiments, the backing structure further reflects acoustic energy in phase. It is configured to fire.

[0078] In some embodiments, the backing structure further comprises a desirably The system is configured to spatially and temporally disperse acoustic reflections that are not present in the system.

[0079] According to one aspect, a sample contact portion and a back portion opposite the sample contact portion. An ultrasonic transducer is provided, the ultrasonic transducer comprising: a piezoelectric material configured to be in acoustic communication with the sample; and A backing structure in acoustic communication with the piezoelectric material that directs acoustic energy to the sample contact. Configured to reflect light towards the contact area and away from the back of the ultrasonic transducer It has been a low acoustic impedance layer, and High acoustic impedance layer, the backing structure having Equipped with.

[0080] In some embodiments, the low acoustic impedance layer and the high acoustic impedance layer are A two-layer mismatched backing material is formed, and the ultrasonic transducer is placed on the second two-layer mismatched backing. a second two-layer mismatched backing material including a second low acoustic impedance layer and a second It has a high acoustic impedance layer.

[0081] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. Equipped with a heat sink.

[0082] In some embodiments, the ultrasonic transducer is in electrical communication with the piezoelectric material. It has one or more electrodes.

[0083] In some embodiments, the backing structure is both thermally and electrically conductive.

[0084] In some embodiments, the ultrasonic transducer comprises a pre-assembled electrical circuit, The electrical circuit is in electrical communication with the top of the backing structure and, therefore, is in electrical communication with the piezoelectric material. Pass.

[0085] In some embodiments, the pre-assembled electrical circuitry may include a printed circuit board, an interposer, an assembly, or the like. The device includes at least one of an integrated circuit and an application specific integrated circuit.

[0086] In some embodiments, the heat sink has at least one channel, is configured to receive and circulate a heat transfer fluid within the channel.

[0087] In some embodiments, the heat transfer fluid is a liquid.

[0088] In some embodiments, the heat sink is electrically isolated from the backing structure.

[0089] In some embodiments, the ultrasonic transducer has a dynamic range associated with its operating wavelength (λo). It can operate at the operating frequency and has low acoustic impedance layer, high acoustic impedance layer, and The second low acoustic impedance layer and the second high acoustic impedance layer are each approximately λo λo / 4 or an odd multiple of λo / 4.

[0090] In some embodiments, the piezoelectric material is configured to resonate at a half-wavelength at the operating frequency. .

[0091] In some embodiments, the ultrasonic transducer comprises a piezoelectric material and a backing structure. a single mismatched layer disposed between the piezoelectric material and the backing structure; The single mismatched layer is in acoustic communication with the piezoelectric material, and the acoustic impedance of the single mismatched layer is relatively higher than that of the piezoelectric material. and the piezoelectric material has a quarter-wave resonance at the operating frequency. It is configured to:

[0092] In some embodiments, the piezoelectric material has a resonant frequency, which is proportional to a resonant wavelength λr. Relatedly, the single mismatch layer has a thickness less than 2λr / 5 relative to the resonant frequency of the piezoelectric material. .

[0093] In some embodiments, the single mismatch layer has a thickness of about λr / 10 to about λr / 20. .

[0094] In some embodiments, the single mismatch layer is made of tungsten.

[0095] In some embodiments, the piezoelectric material has an acoustic impedance of about 27.5 Megarayleigh. It has acoustic characteristics.

[0096] In some embodiments, the piezoelectric material is a polarized composite piezoelectric disk.

[0097] In some embodiments, the polarized composite piezoelectric disc has a thickness of about 2.4 mm. .

[0098] In some embodiments, the polarized composite piezoelectric disc is in a 1_3 configuration.

[0099] In some embodiments, the piezoelectric material is a composite of PZT4 and the piezoelectric material is 200 μm thick. The kerfs were approximately 1000 μm × 1000 μm posts separated by kerfs. It is cut at a pitch of 1200 μm.

[0100] In some embodiments, the kerfs are filled with a composite filler, the composite filler being in an epoxy. The hafnium dioxide particles are doped with .

[0101] In some embodiments, the composite filler is in the 0_3 configuration.

[0102] In some embodiments, the epoxy is Epo-Tek® 301.

[0103] In some embodiments, the piezoelectric material comprises a piezoelectric layer.

[0104] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. A conductive structure is provided.

[0105] In some embodiments, the thermally conductive structure is electrically insulated from the backing structure.

[0106] In some embodiments, the thermally conductive structure is a layer made of AlN or a layer made of beryllium oxide. be.

[0107] In some embodiments, the thermally conductive structure extends over the side portions of the backing structure. There are.

[0108] In some embodiments, the thermally conductive structure includes at least one It has conductive vias.

[0109] In some embodiments, the ultrasonic transducer comprises a piezoelectric material and a backing structure. and a control unit electrically connected to at least one of the above.

[0110] In some embodiments, one or more electrodes are applied to the piezoelectric material through a backing structure. electrically connected.

[0111] In some embodiments, the ultrasonic transducer comprises a wear layer that is wear resistant. do.

[0112] In some embodiments, the wear layer is made of titanium.

[0113] In some embodiments, the ultrasound transducer has a diameter of about 50 mm.

[0114] In some embodiments, the backing structure further reflects acoustic energy in phase. It is configured to fire.

[0115] In some embodiments, the backing structure further comprises a desired The system is configured to disperse unwanted acoustic reflections spatially and temporally.

[0116] In some embodiments, the piezoelectric material is diced into a plurality of piezoelectric regions, with gaps The gap is electrically and acoustically insulating, providing low acoustic impedance. At least one of the dance layer and the high acoustic impedance layer is diced into a plurality of first elements. cut and separated from each other by a first set of gaps, each gap is aligned with a corresponding one of the gaps separating the piezoelectric regions; The gaps in the first set are electrically insulating and acoustically insulating, and the second set are low acoustic impedance. At least one of the second high acoustic impedance layer and the second high acoustic impedance layer is connected to the plurality of second elements. and separated from each other by a second set of gaps, Each gap is aligned with a corresponding gap separating the piezoelectric regions. , the gaps in the second set are electrically insulating and acoustically insulating.

[0117] In some embodiments, the gaps in the first set and the gaps in the second set The gap between them is thermally conductive.

[0118] According to one aspect, there is provided an ultrasonic transducer, the ultrasonic transducer comprising: a one-dimensional piezoelectric array having a front surface and a back surface, the array being configured to be in acoustic communication with the sample; the one-dimensional piezoelectric array is formed and has a plurality of piezoelectric regions arranged in a one-dimensional array; , It is placed on the back side of the one-dimensional piezoelectric array and directs acoustic energy to the front side of the one-dimensional piezoelectric array. a backing structure configured to reflect the light toward the low acoustic impedance layer and and a high acoustic impedance layer. The structure and It is electrically conductive with the top of the backing structure and therefore electrically conductive with the one-dimensional piezoelectric array. a pre-assembled electrical circuit passing through the Equipped with.

[0119] In some embodiments, the ultrasonic transducer includes a second dual-layer mismatched backing material. The second two-layer mismatched backing material includes a second low acoustic impedance layer and a second high acoustic impedance layer. It has an impedance layer.

[0120] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. Equipped with a heat sink.

[0121] In some embodiments, the ultrasound transducer is electrically conductive with the one-dimensional piezoelectric array. It has one or more electrodes through which the

[0122] In some embodiments, the backing structure is both thermally and electrically conductive.

[0123] In some embodiments, the pre-assembled electrical circuitry may include a printed circuit board, an interposer, an assembly, or the like. The device includes at least one of an integrated circuit and an application specific integrated circuit.

[0124] In some embodiments, the piezoelectric regions are separated from one another by a gap, and the gap It is gas insulating and acoustically insulating.

[0125] In some embodiments, the low acoustic impedance layer and the high acoustic impedance layer At least one of the first elements is diced into a plurality of first elements, and a first set of gaps is provided. The gaps in the first set are separated from each other by gaps that separate the piezoelectric regions. The gaps in the first set are aligned with corresponding gaps in the second set, and the gaps in the first set are electrically insulating. It also has acoustic insulation properties.

[0126] At least one of the second low acoustic impedance layer and the second high acoustic impedance layer , diced into a plurality of second elements separated from one another by a second set of gaps. and each gap in the second set is a corresponding one of the gaps separating the piezoelectric regions. the gaps in the second set are electrically insulating and acoustically insulating. do.

[0127] In some embodiments, the gaps in the first set and the gaps in the second set The gap between them is thermally conductive.

[0128] In some embodiments, the top of the backing structure is made from an electrically insulating material.

[0129] In some embodiments, the electrically insulating material is thermally conductive.

[0130] In some embodiments, the top comprises a layer of AlN traversed by conductive vias. Each conductive via is connected to a corresponding piezoelectric region among a plurality of piezoelectric regions arranged in a one-dimensional array. is aligned with the region.

[0131] In some embodiments, the layer of AIN has a front surface, and the layer of AIN is The piezoelectric element is divided into two parts, each of which is diced and arranged in a one-dimensional array. Enhances acoustic isolation of the electrical area.

[0132] In some embodiments, the heat sink has at least one channel, is configured to receive and circulate a heat transfer fluid therein.

[0133] In some embodiments, the heat transfer fluid is a liquid.

[0134] In some embodiments, the heat sink is electrically isolated from the backing structure.

[0135] In some embodiments, the ultrasonic transducer has a dynamic range associated with its operating wavelength (λo). It is capable of operating at the operating frequency, A low acoustic impedance layer, a high acoustic impedance layer, a second low acoustic impedance layer, and The second high acoustic impedance layer corresponds to approximately λo / 4 or an odd multiple of λo / 4, respectively. The thickness is

[0136] In some embodiments, the one-dimensional piezoelectric array is configured to resonate at a half wavelength at the operating frequency. It is done.

[0137] In some embodiments, the ultrasound transducer comprises a one-dimensional piezoelectric array and a backing. a single mismatching layer disposed between the one-dimensional piezoelectric array and the structure; The single mismatched layer, in acoustic communication with the backing structure, adjusts the acoustic impedance of the one-dimensional piezoelectric array. The one-dimensional piezoelectric array has a corresponding acoustic impedance that is relatively higher than that of the moving object. The oscillator is configured to resonate at a quarter wavelength at the operating frequency.

[0138] In some embodiments, the one-dimensional piezoelectric array has a resonant frequency, and the resonant frequency is a resonant wavelength A single mismatched layer is less than 2λr / 5 relative to the resonant frequency of the one-dimensional piezoelectric array. The thickness is .

[0139] In some embodiments, the single mismatch layer has a thickness of about λr / 10 to about λr / 20. .

[0140] In some embodiments, the single mismatch layer is made of tungsten.

[0141] In some embodiments, the piezoelectric regions have posts separated by kerfs.

[0142] In some embodiments, the kerfs are filled with a composite filler, the composite filler being in an epoxy. The hafnium dioxide particles are doped with .

[0143] In some embodiments, the composite filler is in the 0_3 configuration.

[0144] In some embodiments, the epoxy is Epo-Tek® 301.

[0145] In some embodiments, the piezoelectric region is comprised of a piezoelectric layer.

[0146] In some embodiments, the ultrasonic transducer is in contact with a heat conductive material in contact with the backing structure. It has a conductive structure.

[0147] In some embodiments, the thermally conductive structure is electrically insulated from the backing structure.

[0148] In some embodiments, the thermally conductive structure is a layer made of AlN or a layer made of beryllium oxide. be.

[0149] In some embodiments, the thermally conductive structure extends over the side portions of the backing structure. There are.

[0150] In some embodiments, the ultrasonic transducer comprises a one-dimensional piezoelectric array and a backing. A control unit is electrically connected to at least one of the coupling structures.

[0151] In some embodiments, one or more electrodes are coupled to a one-dimensional piezoelectric actuator via a backing structure. The laser diode is electrically connected to the laser diode.

[0152] In some embodiments, the ultrasonic transducer comprises a wear layer that is wear resistant. do.

[0153] In some embodiments, the wear layer is made of titanium.

[0154] In some embodiments, the ultrasound transducer has a diameter of about 50 mm.

[0155] In some embodiments, the backing structure further reflects acoustic energy in phase. It is configured to fire.

[0156] In some embodiments, the backing structure further comprises a desired The system is configured to disperse unwanted acoustic reflections spatially and temporally.

[0157] According to one aspect, there is provided an ultrasonic transducer, the ultrasonic transducer comprising: a two-dimensional piezoelectric transducer having a front surface and a back surface and configured to be in acoustic communication with the sample; Trix and It is placed on the back side of the one-dimensional piezoelectric matrix and transfers acoustic energy to the two-dimensional piezoelectric matrix. a backing structure configured to reflect the light toward the front surface of the box, a two-layer mismatched backing material consisting of a high acoustic impedance layer and a high acoustic impedance layer, a backing structure; The backing structure is electrically connected to the top of the backing structure, and the two-dimensional piezoelectric matrix is ​​electrically connected to the backing structure. a pre-assembled electrical circuit that is electrically conducting; Equipped with.

[0158] In some embodiments, the ultrasonic transducer includes a second dual-layer mismatched backing material. The second two-layer mismatched backing material includes a second low acoustic impedance layer and a second high acoustic impedance layer. It has an impedance layer.

[0159] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. Equipped with a heat sink.

[0160] In some embodiments, the ultrasound transducer comprises a two-dimensional piezoelectric matrix and an electric The device has one or more electrodes that are electrically connected to each other.

[0161] In some embodiments, the backing structure is both thermally and electrically conductive.

[0162] In some embodiments, the pre-assembled electrical circuitry may include a printed circuit board, an interposer, an assembly, or the like. The device includes at least one of an integrated circuit and an application specific integrated circuit.

[0163] In some embodiments, the two-dimensional piezoelectric matrix has a plurality of piezoelectric regions, and each piezoelectric region The regions are separated from one another by gaps, which are electrically and acoustically insulating.

[0164] In some embodiments, the low acoustic impedance layer and the high acoustic impedance layer At least one of the first elements is diced into a plurality of first elements, and a first set of gaps is provided. The gaps in the first set are separated from each other by gaps that separate the piezoelectric regions. the gaps in the first set are electrically insulating and aligned with corresponding gaps in the second set. It is acoustically insulating.

[0165] In some embodiments, the second low acoustic impedance layer and the second high acoustic impedance layer At least one of the layers is diced into a plurality of second elements, and the second set of elements The gaps in the second set are separated from each other by gaps, and each gap separates a piezoelectric region. the gaps in the second set are aligned with corresponding gaps in the spacing gaps, It is insulating and acoustically insulating.

[0166] In some embodiments, the gaps in the first set and the gaps in the second set The gap between them is thermally conductive.

[0167] In some embodiments, the top of the backing structure is made from an electrically insulating material.

[0168] In some embodiments, the electrically insulating material is thermally conductive.

[0169] In some embodiments, the top has a layer of AlN traversed by conductive vias. Each conductive via is aligned with a corresponding one of the plurality of piezoelectric regions.

[0170] In some embodiments, the layer of AIN has a front surface, and the layer of AIN is The piezoelectric regions are individually diced and arranged in a one-dimensional array. Enhances acoustic isolation of areas.

[0171] In some embodiments, the heat sink has at least one channel, is configured to receive and circulate a heat transfer fluid within the channel.

[0172] In some embodiments, the heat transfer fluid is a liquid.

[0173] In some embodiments, the heat sink is electrically isolated from the backing structure.

[0174] In some embodiments, the ultrasonic transducer has a dynamic range associated with its operating wavelength (λo). It is capable of operating at the operating frequency and A low acoustic impedance layer, a high acoustic impedance layer, a second low acoustic impedance layer, and The second high acoustic impedance layer corresponds to approximately λo / 4 or an odd multiple of λo / 4, respectively. The thickness is

[0175] In some embodiments, the two-dimensional piezoelectric matrix is ​​configured to resonate at half wavelength at the operating frequency. It is configured as follows.

[0176] In some embodiments, the ultrasound transducer comprises a two-dimensional piezoelectric matrix and a backplane. a single mismatching layer disposed between the two-dimensional piezoelectric matrix and the piezoelectric element; The single mismatched layer is in acoustic communication with the piezoelectric material and backing structure. have a corresponding acoustic impedance relatively higher than that of the , a two-dimensional piezoelectric matrix is ​​configured to have quarter-wave resonance at the operating frequency.

[0177] In some embodiments, the two-dimensional piezoelectric matrix has a resonant frequency, The resonant wavelength λr is related to the resonant frequency of the two-dimensional piezoelectric matrix. It has a thickness of less than 2λr / 5.

[0178] In some embodiments, the single mismatched layer has a thickness of about λr / 10 to about λr / 20.

[0179] In some embodiments, the single mismatch layer is made of tungsten.

[0180] In some embodiments, the two-dimensional piezoelectric matrix comprises posts separated by kerfs. It has.

[0181] In some embodiments, the kerfs are filled with a composite filler, the composite filler being in an epoxy. The hafnium dioxide particles are doped with .

[0182] In some embodiments, the composite filler is in the 0_3 configuration.

[0183] In some embodiments, the epoxy is Epo-Tek® 301.

[0184] In some embodiments, the two-dimensional piezoelectric matrix is ​​composed of piezoelectric layers.

[0185] In some embodiments, the ultrasonic transducer is in thermal contact with the backing structure. A conductive structure is provided.

[0186] In some embodiments, the thermally conductive structure is electrically insulated from the backing structure.

[0187] In some embodiments, the thermally conductive structure is a layer made of AlN or a layer made of beryllium oxide. be.

[0188] In some embodiments, the thermally conductive structure extends over the side portions of the backing structure. There are.

[0189] In some embodiments, the ultrasound transducer comprises a two-dimensional piezoelectric matrix and a piezoelectric transducer. A control unit is electrically connected to at least one of the locking structures.

[0190] In some embodiments, one or more electrodes are coupled to a two-dimensional piezoelectric via a backing structure. are electrically connected to the matrix.

[0191] In some embodiments, the ultrasonic transducer comprises a wear layer that is wear resistant. do.

[0192] In some embodiments, the wear layer is made of titanium.

[0193] In some embodiments, the ultrasound transducer has a diameter of about 50 mm.

[0194] In some embodiments, the backing structure further reflects acoustic energy in phase. It is configured to fire.

[0195] In some embodiments, the backing structure further comprises a desired The system is configured to disperse unwanted acoustic reflections spatially and temporally.

[0196] According to another aspect, a multi-layer ultrasound transducer backing structure is provided. In some embodiments, the backing structure may be configured to absorb most of the acoustic energy, in some cases Depending on the transducer, virtually all of the acoustic energy is reflected out from the front face of the transducer. Typically, such transducers are mounted on a physical surface behind the backing stack. It is not affected by physical contact.

[0197] According to another aspect, a single-element liquid-cooled specific material transformer designed to be compatible with titanium is provided. The transducer is provided with a double layer mismatched backing material (DLDB). The DLDB is driven by a 680 kHz piezoelectric transducer. The transducer can be designed to have an acoustic impedance of 27.5 MHz. A first DLD with a Galileo-Richard (MR) piezoelectric composite element and bonded to a second DLD pair. The first DLDB pair has an acoustic impedance of approximately 5.1 (MR) and The first graphite layer has a thickness of 1.03 mm and an acoustic impedance of about 100 MR. and a second tungsten metal layer having a thickness of 1.53 mm, and the second DLDB pair The first graph has an acoustic impedance of about 5.1 (MR) and a thickness of about 0.905 mm. a second layer having an acoustic impedance of about 41.5 MR and a thickness of 1.71 mm; It includes a copper metal layer.

[0198] In some embodiments, the DLDB comprises a first backing layer and a second backing layer; Each backing layer has a distal surface and a proximal surface. The proximal surface is in contact with the second backing layer. The DLDB comprises a piezoelectric element having a distal surface and a proximal surface. The first backing layer may be placed in acoustic contact with a distal surface of the first backing layer in contact with a proximal surface of the piezoelectric element. The first and second backing layers of the DLDB are approximately 1 / 2 the designed resonant frequency of the piezoelectric element. The first backing layer can be designed to have a thickness of 1 / 4λ. The second backing can be made of a material having a relatively low acoustic impedance. The backing layer is made of a material having a relatively high acoustic impedance compared to the first backing layer. It can be made.

[0199] In some embodiments, the transducer is a 2.4 mm thick, 1-3 polarized complex. The thickness of the composite piezoelectric disc is approximately 0.35 to 0.4λ. The DLDB backbone operates in 1 / 2λ mode and has a positive electrode on the proximal surface and a negative electrode on the distal surface. To compensate for the mass loading effect of the piezoelectric disc, the thickness is less than 1 / 2λ. The piezoelectric composite can be selected as follows: 1 mm, separated by 200 μm kerfs. 200 μm cut at a pitch of 1200 μm, leaving 1000 μm × 1000 μm pillars The polarized PZT4 material was fabricated by dicing and filling the kerfs. The kerfs can be formed by, for example, but not limited to, a composite filler that fills the kerfs. The acoustic impedance of the filler is approximately 7 to 8 megarays (MR), and the acoustic impedance of the entire piezoelectric composite layer is Epotek3 is used to closely match the resonant impedance to titanium (approximately 27.5MR). O_3-composed composite packing of approximately 5 μm hafnium dioxide particles doped in O_1 epoxy The negative side of the piezoelectric composite layer can be filled with, for example, tungsten powder filled epoxy. A 6 mm thick ZA-8 zinc-aluminum alloy disc was bonded to the proximal surface using a suction cup. The distal surface of the ZA-8 disc can then be coated with submicron particles of hafnium oxide. The proximal surface of the alumina composite disc was treated with Epotek 301 epoxy filled with ammonium nitrate. The alumina composite discs are separated by 200 μm kerfs. The kerfs may include 750 μm×750 μm×1400 μm (height) pillars. Filled with the same hafnium particle-filled epoxy used to fabricate the piezoelectric composite disks. The distal surface of the alumina composite is then coated with a submicron hafnium oxide filled E A layer of potek 301 epoxy was used to bond the proximal surface of a 3 mm thick titanium disc. Then, two sets of double-layered mismatched backing materials (DLDB) are prepared as follows: using Epotek 301 epoxy filled with submicron tungsten powder. , can be bonded to the proximal surface of the piezoelectric disc. The proximal surface of the piezoelectric composite disc has a thickness of 1 The graft was cemented to the distal surface of a 0.30 μm Poco DFP-1 graphite disc and The DFP-1 graphite disc has an acoustic impedance of 5.1 MR and a 905 μm The thickness is 1 / 4 at the center frequency of the transducer, 680 kHz. The proximal surface of the graphite disk then has an acoustic impedance of 100 The MR is bonded to the distal surface of a 1530 μm thick tungsten disc. The thickness of the stainless steel disk is approximately 85°C, just above the center frequency of the transducer. At 0 kHz, the proximal surface of the tungsten disc is then Poco DFP-1 graphite die with a impedance of 5.1 MR and a thickness of 905 μm The thickness is slightly above the center frequency of the transducer. The proximal surface of the graphite disk is the acoustic impedance. It is bonded to the distal surface of a copper disc with a impedance of 41.5 MR and a thickness of 1710 μm. The thickness corresponds to 1 / 4λ at 680kHz. The disks comprise a first bilayer mismatched backing stack, consisting of a graphite disk and a copper The disks form a second DLDB stack. These two stacks work together This acoustically isolates the piezoelectric composite disk from the thermal and cooling elements of the transducer. The thermal cooling solution can be mounted on the proximal surface of the copper disc without substantially compromising the acoustic performance of the transducer. In these embodiments, a 1 mm thick, highly thermally conductive AIN substrate can be bonded directly to the substrate. The distal surface of the disk is bonded to the proximal surface of the copper disk using thermally conductive epoxy. The IN disc is soldered or has conductive epoxy bonded wire. A cutout is provided to accommodate the space for the electrical connection to the copper disc. The entire DLDB stack in this embodiment is electrically and thermally conductive, Allows direct electrical connection to the signal electrodes of the piezoelectric composite disc through the B-stack Furthermore, the materials explicitly described in this exemplary embodiment Beyond these, there are many materials that can actually be used in applications of the disclosed technology, some of which are It should be noted that some may be electrically conductive, thermally conductive, both, or neither thermally nor electrically conductive. In this exemplary embodiment, all of the DLDB layers are electrically and thermally conductive. The proximal face of the copper heat sink base is brazed or soldered to the distal end of the heat sink top. The heat sink assembly is then hollowed out to form a hollow copper heat sink assembly. The surface is sealed proximal to the AlN disk with a thermally conductive but electrically insulating epoxy. In the illustrated embodiment, the proximal surface of the top of the hollow heat sink is bonded directly to the same thermal conductivity surface. A conductive epoxy is used to bond the distal surface of the AI ​​disk. N disk has two clearance holes and one notch, The lance holes receive the cooling tubes, which are secured to the integral barbed tubes on top of the heat sink. The cutouts provide a clearance path for the signal wires attached to the copper DLDB layer. The proximal surface of the AlN disc is bonded to the copper using thermally conductive epoxy. The copper housing shell can be bonded to the distal surface of the copper heat spreader. 8. The disc is fitted around the perimeter with electrically insulating and thermally conductive epoxy. In some embodiments, all of the acoustic and thermal stacks can be bonded together. The air gap is filled with a thermally conductive and electrically insulating epoxy. The entire assembly is sealed except for the hollow interior of the assembly (i.e., the top and bottom of the heat sink). The body becomes solid. The rubber hose is fitted onto the barbed hose protrusions on top of the copper heat sink. and secured in place with a hose clamp. A rubber hose may be used, for example but not limited to: The transducer may have an inner diameter of 3 / 8 inch. This can be realized by a BNC RF electrical connector soldered to the copper lid. Additionally, the center conductor of the BNC connector can be soldered to the signal wire. Therefore, the BNC signal conductor is electrically connected to the positive signal electrode of the piezoelectric composite disk. In some embodiments, a conductive epoxy can be used to bond the proximal link of the copper shell. Solder or bond a copper cap to the cap, and connect the ground terminal of the BNC connector and the piezoelectric composite diode. Complete the electrical connection from the negative terminal of the disk through the copper shell and the ZA-8 disk. The transducer also includes an electrically insulating plastic housing. The housing is bonded to a copper lid and a copper shell, slightly enclosing the edge of the alumina composite disc. The resulting metal is then at least partially covered and placed on the front of a titanium disc. The transducer (i.e., the assembly of the aforementioned components) is a liquid-circulating air-to-liquid The cooling system is connected to a heat exchanger and filled with a suitable cooling fluid. A non-limiting example of a cooling fluid is a 50% pure water. It is a propylene glycol / water mixture.

[0200] According to another embodiment, the chip is fully diced and electrically attached directly to the PCB. A 1-D linear array with a single DLDB backing layer is provided. This configuration allows for relatively easy electrical interconnection of the array, and , ASICs or high density connectors can even be applied relatively directly to the stack. The layer may include a protective wear layer. Alternatively, this layer may be a lens or matching layer depending on the application. The piezoelectric elements form a 1-D linear array, with each piezoelectric element positioned at a gap (or kerf). The arrays are separated from each other by a low acoustic impedance 1 / 4λ layer. The layer includes a DLDB structure having a gap between the elements, and Secondly, the low acoustic impedance layer is aligned with the piezoelectric elements arranged in a row. A high impedance 1 / 4λ layer is provided, which may be made of tungsten. The acoustic impedance layer is separated into elements with gaps between them and arranged in an array. The array also includes electrodes on the surface of the PCB, the PCB, and Vias in the printed circuit board are provided, the vias connecting the electrodes from one side to the other side. do.

[0201] According to yet another aspect of the present invention, a second DLDB pair is provided that overlaps the first DLDB pair. A 1-D linear array with dual DLDBs is provided, the second pair of DLDBs being low acoustic impedance. On top of the low acoustic impedance 1 / 4λ layer, there is a thermally continuous The thermal conductive layer is made of AlN, but is oxidized. The transformer may be made of beryllium or another suitable thermally conductive and electrically insulating material. The array includes conductive vias for connecting to the transducer elements. This allows the array to be cooled from the edge. It can be cooled and electrically connected directly, for example, using a PCB.

[0202] According to another aspect, a 2-D matrix transducer is provided. In an embodiment, the 2-D matrix is ​​a double DLD B1 having laterally thermally continuous layers. The matrix transducer is a 6 x 16 element matrix array. The matrix transducer has a protective wear layer. This layer can be used as a lens or alignment layer depending on the application across the 2D transducer array. The matrix transducer can be alternatively replaced by a 2- D Gaps in two axes to form linear or matrix arrays The matrix transducer comprises piezoelectric elements separated from each other by grooves (or kerfs). The laser has a low acoustic impedance 1 / 4λ layer and a high acoustic impedance 1 / 4λ layer. The first DLDB stack includes a low acoustic impedance 1 / 4λ layer in two axial directions. The piezoelectric elements are separated into elements with gaps between them, and are aligned in a line with the arrayed piezoelectric elements. The high acoustic impedance 1 / 4λ layer can be made of tungsten. The impedance 1 / 4λ layer is aligned with the arrayed piezoelectric elements and is These layers can be separated into elements with gaps between them. The matrix transducer also includes a second stack. The B stack consists of a low acoustic impedance 1 / 4λ layer and a high acoustic impedance 1 / 4λ layer. The low acoustic impedance 1 / 4λ layer has gaps between the elements in the two axial directions. The piezoelectric elements are separated into individual elements and aligned in a line with the arrayed piezoelectric elements. The quarter-laminar layer is generally continuous and made of AlN. means that the stacks are gapless and laterally spaced along both axes of the array. Vertical conductivity is provided by vias in the AlN layer. This layer is particularly useful for maintaining the interior of the 2-D array isothermal relative to the edge elements. It is useful for

[0203] Other features and advantages of the present invention are described in the following non-limiting sections relating to specific embodiments of the present invention. Certain embodiments of the present invention will become more apparent from a reading of the detailed description and from reference to the accompanying drawings, in which: are given as examples only. [Brief explanation of the drawings]

[0204] [Figure 1a] 1 illustrates a liquid-cooled ultrasonic transducer according to one embodiment. [Figure 1b] 1b shows a backing structure in contact with the piezoelectric material of the ultrasound transducer of FIG. 1a. [Figure 1c] FIG. 1b is a cross-sectional view of FIG. [Figure 1d] FIG. 1b is a cross-sectional view of FIG. [Figure 2] FIG. 1 is an exploded view of a liquid-cooled ultrasonic transducer according to another embodiment. [Figure 3] 3 is another exploded view of the liquid-cooled ultrasonic transducer shown in FIG. 2. [Figure 4] 1 illustrates a backing structure in contact with the piezoelectric material of an ultrasonic transducer and a heat sink in thermal contact with the backing structure, according to one embodiment. [Figure 5] 1 illustrates a single mismatched layer sandwiched between a piezoelectric material and a two-layer mismatched backing material, according to one embodiment. [Figure 6] FIG. 6 is a cross-sectional view of FIG. 5. [Figure 7] 1 illustrates a 16-element one-dimensional linear array according to one embodiment. [Figure 8] FIG. 8 is a cross-sectional view of FIG. 7 illustrating the layers forming the 16-element one-dimensional linear array. [Figure 9] FIG. 8 is another cross-sectional view of FIG. 7 illustrating the layers forming the 16-element one-dimensional linear array. [Figure 10]1 illustrates a 16-element one-dimensional linear array according to another embodiment. [Figure 11] FIG. 11 is a cross-sectional view of FIG. 10 illustrating the layers forming the 16-element one-dimensional linear array. [Figure 12] FIG. 11 is another cross-sectional view of FIG. 10 illustrating the layers forming the 16-element one-dimensional linear array. [Figure 13] This is a simplified diagram of the operating principle of an ultrasonic transducer. More specifically, considering a relatively narrowband case, the reflection coefficient and the specific arrangement of low and high acoustic impedance layers within the DLDB interact to ensure that only in-phase reflections reach the output (front) face of the transducer. Due to the resonance of each DLDB layer and the resulting alternating pair phasing, the energy interferes to remain in phase after every four reflections through the layers and to cause partial breakdown after every two reflections. As a result, once trapped in the DLDB layer, the energy rings down at a very low amplitude over a relatively long period of time. [Figure 14] 1 illustrates a two-dimensional piezoelectric matrix according to one embodiment. [Figure 15] FIG. 15 is an exploded view of FIG. [Figure 16] FIG. 15 is a cross-sectional view of FIG. [Figure 17] 1 illustrates an ultrasound transducer according to another embodiment. [Figure 18] 1 illustrates an ultrasound transducer according to another embodiment. [Figure 19a] A comparison of a state-of-the-art air-backed specific material transducer (top) without a heat sink transmitting in titanium at 680 kHz with the ultrasonic transducer of Figure 1a (bottom) under identical conditions. [Figure 19b] A logarithmic comparison of the envelope between a state-of-the-art air-backed specific material transducer transmitting in titanium (top) and the ultrasonic transducer of Figure 1a transmitting in titanium (bottom). [Figure 20]Three 680 kHz specific material transducers with copper heat sinks attached to the backside of the piezoelectric stack are compared: an air-backed specific material transducer with a heat sink bonded directly to the backside of the transducer's piezoelectric element (top); a state-of-the-art approach in which the heat sink is bonded to the transducer's piezoelectric element with an acoustically lossy, thermally conductive material such as alumina-filled silicone foam (center); and the ultrasonic transducer of Figure 1a with the heat sink bonded directly to the backing structure (bottom). [Figure 21] 21 shows a logarithmic graph of the envelope of the waveform shown in FIG. 20. [Figure 22a] A comparison is made for a 10 MHz single element transducer, comparing the pulse-echo pulse response of a 1 / 4λ resonant piezoelectric element with an approximately 1 / 10λ thick tungsten mismatch layer, and showing the effect of adding a single DLDB to the backside of the mismatch layer. [Figure 22b] The logarithmic envelope of the waveform of a 10 MHz single-element transducer is compared in Figure 22a. [Figure 23a] Comparison of the effect of adding a 3mm thick copper heat sink directly to the backside of the 10MHz acoustic stack in Figure 22a. The DML backing bonded directly to the 3mm copper heat sink develops multiple internal reflections that result in undesirable artifacts in imaging or inspection applications (top). When the heat sink is bonded directly to the front side of the acoustic stack, the stack with DLDB experiences no measurable change (bottom). [Figure 23b] A comparison of the logarithmic envelope of the pulse-echo waveform of a 10 MHz transducer is shown in Figure 23a. [Figure 24]Pulse-echo response from a 550 μm x 5 mm material-specific 5 MHz 1D array element with PZT composite piezoelectric elements matched for transmission in titanium, with a dual DLDB backing, compared to an air backing. Minimal differences are observed between the air-backed transducer (top) and the transducer with DLDBs (bottom), except for a slight increase in pulse length seen in the stack with DLDBs. [Figure 25] The pulse-echo response of the transducer element described in Figure 24 is compared with that of the element described in Figure 24, with the addition of a 6 mm copper heat sink bonded directly to the backside of the acoustic stack (top). Significant internal reverberation artifacts are observed when the heat sink is bonded to the back of the air-backed transducer (bottom). DETAILED DESCRIPTION OF THE INVENTION

[0205] In the following description, like features in the drawings will be given like reference numerals and the drawings will be separated into multiple parts. To avoid distraction, some elements may be identified in one or more of the preceding drawings. In some cases, these elements may not be shown in some drawings. The elements in the drawings are not necessarily to scale, emphasis being placed on clearly showing the elements and structure of the system. It should be understood herein that the drawings are not to scale. "One" is understood herein to mean "at least one." Defined, that is, unless otherwise specified, these prefixes do not exclude multiple elements. Furthermore, the use of "substantial" to modify the value, condition, or characteristic of a feature of an exemplary embodiment is not permitted. Terms such as "generally," "generally," and "about" are used to describe values, conditions, or The characteristics are acceptable for proper operation of this exemplary embodiment for its intended use. It should also be noted that the term "variable" should be understood to mean that the range is defined within the range possible.

[0206] As used herein, the terms "connected," "coupled," and the like are used interchangeably. These variations and derivatives include any direct or indirect connection or Connection or coupling between elements means acoustic, mechanical, physical, optical, operational, It may be electrical, wireless, or a combination thereof.

[0207] Position descriptors that indicate the position or orientation of one element relative to another element are not described herein for ease of explanation. are used for ease and clarity and unless otherwise specified, they should be understood in the context of the drawing. It will be understood that the present disclosure should be interpreted as illustrative and not limiting. Spatially relative terms (e.g., "outer" and "inner"), "outside" "outside" and "inside," "periphery" and "central" , "over" and "under," and "top" and "bottom" )") may be used in conjunction with the positions and orientations illustrated in the drawings, as well as for other uses or operations of the present embodiment. It will be understood that the term is intended to encompass various positions and orientations.

[0208] <General theoretical context> Generally, a piezoelectric ultrasonic transducer consists of a piezoelectric element with two opposing surfaces. The piezoelectric element can be selected to operate at a desired frequency. An example of this behavior is the acoustic resonance of a piezoelectric element. A piezoelectric acoustic transducer has multiple layers. For example, but not limited to, these layers may be laminated or overlaid. In addition to the piezoelectric element, the piezoelectric acoustic transducer also includes a signal electrode and Ground electrodes, matching layers, acoustic backing materials, lenses, and their intended uses It may contain at least one of many other layers or structures to improve performance. Some transducers can be designed to output acoustic energy. (i.e., transmitter) along with other transducers that transmit impinging acoustic energy. Some transducers can detect both Note that the NI 9111 can be optimized to perform functions (i.e., transceivers) To change the type of piezoelectric ultrasonic transducer generated, Different technologies may be implemented in the field of transducers.

[0209] In most cases, designing a piezoelectric transducer presents many challenges, e.g. Optimization and / or direction of acoustic energy to the intended target, as well as the direction of acoustic energy away from the intended target. It is related to minimizing energy. For example, the relatively simple design of a thin disk-shaped piezoelectric element This thin disk-shaped piezoelectric element can be considered in such a case, and the appropriate When a frequency voltage is applied, the tilt generates equal acoustic waves from both the front and back of the disk. There is a direction.

[0210] Enhanced acoustic energy output from one surface (e.g., anterior or distal surface) and In order to reduce the output of acoustic energy from the surface (the rear or proximal surface), such piezoelectric There are many different techniques to improve the properties of the disc. Generally, such piezoelectric elements are Those skilled in the art will know that each surface is positioned in contact with a conductive electrode. An example of a conductive electrode is a sputtered metal, which allows the piezoelectric element to function as an electronic system. The RF voltage signal is applied to the electrode. In this embodiment, the piezoelectric element is subjected to a mechanical perturbation. When the thickness of the wire matches the correct operating conditions, the piezoelectric element will mechanically resonate at ultrasonic frequencies. It should be noted that this possibility depends on the properties of the piezoelectric material. .

[0211] The ability to use backing materials in piezoelectric ultrasonic transducers is well known in the art. Examples of backing materials include those with acoustic properties that are much lower than the piezoelectric layer. an absorptive backing material having an impedance and a conductive layer for dispersing and absorbing acoustic energy; The backing material has a composite morphology and a much higher acoustic impedance and typical Typically, it has a thickness of less than 1 / 4λ, so that the overall thickness is tunable while still allowing for tunable mass loading effects. A mismatched layer designed to efficiently reflect all energy back to the transducer output. and its many other variations, including air backing and delay line backing. Other techniques include, but are not limited to:

[0212] Many transducer backing materials are low acoustic impedance absorptive backing materials. This directs most, or at least most, of the energy forward of the transducer (or " The energy that is not reflected within the backing material is absorbed and dispersed. Generally, such absorbent backings are designed to dissipate fluid within a predetermined geometric range. For example, the backing material must be large enough to absorb sufficient acoustic energy. and have a specific configuration that prevents unwanted internal reflections from returning to the piezoelectric crystal. These low acoustic impedance backing materials usually have a piezoelectric layer with a 1 / 2λ resonant mode. It requires that the device operates in the correct mode.

[0213] Another common backing technique is a de-matching layer, which reduces the attenuation in front of the transducer, providing some adjustable mass loading to adjust Generally, the effect of adding a mismatched layer is 1 / 4 In some embodiments, the mismatched layer is 10 GHz. Reflects close to 0 percent of the energy, or at least most of the energy. It can be made to work.

[0214] Another embodiment includes an air-backed transducer, also located one Reflecting close to 0.00 percent of the energy, or at least the majority of the energy However, such transducers cannot be mass loaded or damped. Such a transducer is similar to an optically absorbing transducer in that the piezoelectric element resonates at 1 / 2λ. It operates in the same mode as cloning.

[0215] One limitation of most backing technologies is that the back of the transducer , which is inaccessible for electrical connection without damaging the acoustic signal, and Avoid the side that generally has the smallest footprint to minimize production and loss A further limitation of existing technology is that it requires direct contact with the piezoelectric element of the transducer. The difficulty lies in providing an efficient thermal cooling solution that can accommodate the current relaxor system. As crystalline and single crystal ferroelectrics become increasingly efficient at the expense of thermal robustness, the above mentioned problems The issue is becoming increasingly important.

[0216] In a 2-D array transducer, the access to the internal elements of the matrix transducer Due to the lack of access, both the cooling and electrical interconnects and the acoustic backing must be considered. It should be noted that this may be more difficult to achieve. Therefore, it is necessary to develop a backing that is both acoustically efficient and electrically conductive. As described in the specification, there is a need to develop backing technology that is both acoustically efficient and thermally conductive. Also, as described herein, the proximal surface of the backing is relatively electrical and / or thermal devices without compromising the performance of the transducer while remaining relatively reflects almost all of the acoustic energy of the piezoelectric transducer while allowing for connection to There is a need to develop an acoustically and spatially efficient backing that can accommodate this. 1-D or 2-D arrays with electrical connections to and cooling of each element, as described in Develop a thermally and electrically conductive, acoustically efficient backing that can be connected to a transducer. It is necessary to issue it.

[0217] <Backing structure for ultrasonic transducer> Broadly described, the present disclosure relates to a multilayer ultrasound transducer backing structure or In some embodiments, this technique allows for the majority of the acoustic energy to be reflects some, and in some cases virtually all, of the acoustic energy from the front face of the transducer. Furthermore, a system or device manufactured according to the present technology can be In particular, it is not affected by physical contact on the backside of the backing stack. The transducers are designed so that very little energy is absorbed by the backing layer. , and are relatively efficient thermally, electrically and acoustically.

[0218] In the context of this disclosure, as described in more detail below, a backing structure may comprise one The above non-conforming backing materials include each non-conforming backing material including two layers. Each mismatched backing is called a "dual layer de-matching backing material." In some embodiments, the DLDB pair is referred to as a backup. The ultrasonic transducer can be used as a first A DLDB and a second DLDB, each of which may contain two layers. In some embodiments, for example and without limitation, two One or more DLDB pairs can be used as backing structures.

[0219] Notably, the layers that make up the DLDB have electrical, acoustic, thermal, and mechanical properties. These properties may vary depending on the intended application. DLDB is not a material that can be used as a conductive and thermally conductive layer, but as a material that can be used as a non-conductive and non-thermally conductive layer. , or any combination thereof.

[0220] An embodiment of an ultrasonic transducer 100 will be described with reference to FIGS.

[0221] Generally, an ultrasonic transducer 100 comprises a piezoelectric material 102, a backing structure 10 8, a heat sink 122, and one or more electrodes 126 (referred to as electrodes 126). The ultrasonic transducer embodiments described throughout the specification include piezoelectric materials. Although the ultrasonic transducer of the present disclosure is described as a piezoelectric material, those skilled in the art will recognize that the ultrasonic transducer of the present disclosure is Instead of any ferroelectric material, any single crystal or polycrystalline material, any electromechanical transducer material Such materials may include ferroelectric, pyroelectric, piezoelectric, electrostrictive and / or other It will be readily apparent to those skilled in the art that the present invention may have one or more of the following relevant characteristics: As mentioned above, in the context of this specification, the expression "piezoelectric material" includes ferroelectric materials, pyroelectric materials, Note that the term can also refer to materials such as magnetoresistive materials, relaxor materials, and electrostrictive materials.

[0222] The piezoelectric material 102 has a front surface 104 and a back surface 106. The piezoelectric material 102 is The piezoelectric material 102 is configured to be in acoustic communication with a piezoelectric element (not shown). For example, but not by way of limitation, acoustic properties include an acoustic impedance of approximately It may include being 27.5 Megarayleigh.

[0223] In some embodiments, the piezoelectric material 102 may be a polarized composite piezoelectric disk. The polarized composite piezoelectric disc may be in a 1_3 configuration.

[0224] In some embodiments, the piezoelectric material 102 may be a composite of PZT4 and For example, but not by way of limitation, the support pillars may be kerf-separated by 200 μm kerfs. The kerfs may be separated 1000 μm x 1000 μm posts. The kerfs may be filled with a composite filler. In an embodiment, the composite filler may be in the 0-3 configuration. A non-limiting example of an epoxy is Epo In some embodiments, the piezoelectric material 102 is about 2. It may have a thickness comprised within the range of 35 mm to about 2.45 mm.

[0225] In some embodiments, the piezoelectric material 102 is comprised of a piezoelectric layer.

[0226] A backing structure 108 is disposed on the back surface 106 of the piezoelectric material 102. The structure 108 is configured to reflect acoustic energy toward the front surface 104 of the piezoelectric material 102. In some embodiments, the backing structure 108 further comprises a In some embodiments, the backing structure 1 is configured to reflect the light beams in phase. 08 further reduces unwanted acoustic reflections within the backing structure 108 spatially and temporally. The backing structure 108 is thermally and electrically conductive. The backing structure 108 shown in FIGS. 1 to 6 includes a first two-layer mismatched backing material 110 and a and a second two-layer mismatched backing material 116 .

[0227] The first two-layered mismatched backing material 110 includes a first graphite layer 112 and a second graphite layer 113. In some embodiments, the tungsten layer 114 contacts the tungsten layer 112. The first graphite layer 112 has an acoustic impedance of about 5.1 Mrayleigh; and In some embodiments, the thickness is in the range of about 1.5 mm to about 1.6 mm. The tungsten layer 114 has an acoustic impedance of about 100 MRayleigh and a First graphite layer 112 and the substrate have a thickness in the range of 2.5 mm to about 2.7 mm. The acoustic impedance and thickness of the tungsten layer 114 depend on the intended application, Therefore, those skilled in the art will readily understand that there may be variations from the examples listed above. It will.

[0228] The second dual-layered mismatched backing material 116 contacts the first dual-layered mismatched backing material 110. The second two-layer mismatched backing material 116 comprises a second graphite layer 118 and a second graphite layer 119. In some embodiments, the second graphite layer 118 includes a copper layer 120 in contact with the graphite layer 118. The layer 118 has an acoustic impedance of about 5.1 MRayleigh and a thickness of about 1.5 mm to about 1 In some embodiments, the copper layer 120 has a thickness in the range of about 4.6 mm. It has an acoustic impedance of 1.5 MRayleigh and a range of approximately 2.5 mm to 2.6 mm. The acoustic impedance of the second graphite layer 118 and the copper layer 120 is The thickness and strength of the material will depend on the intended application and may therefore vary from the examples listed above. Those skilled in the art will readily appreciate that this may vary.

[0229] The heat sink 122 is in thermal contact with the backing structure 108. In some embodiments, , the heat sink 122 includes at least one channel 124. Such a channel 124 is configured to receive and circulate a heat transfer fluid therein. may be a liquid, a gas, or any mixture thereof. The heat sink 122 is electrically insulated from the backing structure 108 .

[0230] The electrodes 126 are in electrical communication with the piezoelectric material 102. In some embodiments, the ultrasonic transducer The lancer 100 comprises a piezoelectric material 102, a backing structure 108, and an electrode 126. The control unit (not shown) is electrically connected to at least one of the devices. The control unit may be useful for controlling the ultrasonic transducer 100. In this embodiment, the electrodes 126 are electrically coupled to the piezoelectric material 102 through the backing structure 108. are connected to the network.

[0231] The ultrasonic transducer 100 is operable at an operating frequency. In some embodiments, the first graphite layer 112, the first graphite layer A tungsten layer 114 in contact with the graphite layer 112, a second graphite layer 118, and a copper The layers 120 each have a thickness corresponding to approximately λ 0 / 4 or an odd multiple of λ 0 / 4. In some embodiments, the operating wavelength λ o may be about 530 kHz.

[0232] In one embodiment, the piezoelectric material 102 is configured to resonate at a half-wavelength at the operating frequency.

[0233] In another embodiment, the ultrasonic transducer 100 comprises a piezoelectric material 102 and a backing structure. The single mismatch layer 128 is disposed between the piezoelectric structure 108 and the piezoelectric substrate 106. The single mismatch layer 128 is in acoustic communication with the material 102 and the backing structure 108. have a corresponding acoustic impedance relatively higher than the acoustic impedance of the dielectric material 102. In this embodiment, the piezoelectric material 102 is configured to have a quarter wave resonance at the operating frequency. The piezoelectric material 102 has a resonant frequency, which is related to the resonant wavelength λr. The single mismatch layer 128 has a thickness of less than 2λr / 5 relative to the resonant frequency of the piezoelectric material 102. The single mismatching layer 128 may have a thickness of about λr / 10 to about λr / 20. The single mismatch layer 128 may be made of, for example, but not limited to, tungsten. Other materials may be used for the single mismatched layer 128. In some embodiments, The resonant wavelength λr may be about 530 kHz.

[0234] In some embodiments, the ultrasonic transducer is in contact with the backing structure 108. In some embodiments, the thermally conductive structure 130 may be a backing. In some embodiments, the thermally conductive structure 130 is electrically isolated from the thermally conductive structure 108. may be a layer made of AlN or a layer made of beryllium oxide. The thermally conductive structure 130 may extend over the side portions of the backing structure 108. In some embodiments, the thermally conductive structure 130 includes at least one Contains conductive vias.

[0235] In some embodiments, the ultrasonic transducer 100 includes a wear layer that is wear-resistant. Wear layer 132 may be made of, for example, but not limited to, titanium. stomach.

[0236] In some embodiments, the ultrasonic transducer 100 is acoustically matched to the piezoelectric material 102. 1d, the thermally conductive layer 133 is disposed between the piezoelectric material 102 and the thermally conductive layer 133. and the wear layer 132. Such a thermally conductive layer may be provided via the copper lid 135. The lid 135 may be in thermal contact with the heat sink 122. Notably, the lid 135 may be in thermal contact with any other It can be made from a thermally conductive material.

[0237] In some embodiments, the ultrasonic transducer 100 has a diameter of about 50 mm. .

[0238] <Example> Next, other embodiments of the ultrasonic transducers described above will be presented.

[0239] In some embodiments, the ultrasonic transducer is a single-element liquid-cooled material-specific transducer. This includes two stacked DLDBs (double DLDB stack) stacked on a transducer. The single-element liquid-cooled material-specific transducer is designed to match titanium. A 680 kHz piezoelectric transducer with an impedance of 27.5 Megarayleigh (MR) One exemplary embodiment of a DLDB designed to operate an electromechanical transducer is The first DLDB pair is coupled to the DLDB pair, and the first DLDB pair is configured to receive an acoustic signal of approximately 5.1 MR. The first graphite layer has an impedance of about 100 MR and a thickness of 1.03 mm. a second tungsten metal layer having an acoustic impedance of 1.53 mm and a thickness of 1.53 mm. The second DLDB pair has an acoustic impedance of about 5.1 (MR) and a thickness of 0.905 mm. a first graphite layer having an acoustic impedance of about 41.5 MR and a thickness of 1.71 mm and a second copper metal layer having a thickness of

[0240] In some embodiments, one or two DLDBs of a single element transducer are It has a high acoustic impedance mismatch layer (DML) of less than 1 / 5λ, usually less than 1 / 4λ, and An acoustic impedance mismatching layer is inserted between the DLDB stack and the piezoelectric element.

[0241] In some embodiments, the DLDB comprises a first backing layer and a second backing layer; Each backing layer has a distal surface and a proximal surface. The proximal surface of the first backing layer is in contact with the proximal surface of the second backing layer. The DLD can be in acoustic contact with the distal surface of the DLD layer, and these two layers together comprise the DLD structure. B is positionable in acoustic contact with a piezoelectric element having a distal surface and a proximal surface, and a first backing The distal surface of the lug layer can be in contact with the proximal surface of the piezoelectric element. The second backing layer has a thickness of about 1 / 4λ with respect to the designed resonant frequency of the piezoelectric element. The first backing layer can be designed to have a relatively low acoustic noise compared to the piezoelectric element. The second backing layer can be made of a material having a high impedance. It can be made from a material that has a relatively high acoustic impedance compared to the backing layer. Cut.

[0242] In embodiments where two or more DLDBs are stacked, the connection to the transducer is via the DLDB. Improved or increased acoustic insulation from the electrical and thermal structures that are used can be achieved.

[0243] In some embodiments, during operation, the first surface in the first layer of the first DLDB is The majority of the acoustic energy directed towards the rear of the transducer is directed towards the The back surface of the first layer also reflects light from the back surface of the transducer. It reflects most of the energy that reaches it, and in doing so, it phases it. The wavelength layer and the layer included in the DLDB have low to high acoustic impedance. The layer of the DLDB is affected by the alternating sign of the reflection coefficient due to the transition from resonates with the remaining energy in the backing material over the bandwidth of the transducer. The resonant layer then reacts with the backing stack for a relatively long period of time and with very low amplitude. The energy is emitted in phase both forward and backward through the At the same time, unwanted reflections are effectively diffused to the outside with an acceptably low amplitude.

[0244] The DLDB embodiments described so far are for 1 / 2λ resonant piezoelectric transducers. The acoustic impedance of the designed acoustic stack and the optical layer of the DLDB is larger and and an intended load that is well matched to the acoustic impedance of the piezoelectric layer. An example of such a structure is described in PCT patent application PCT / CA2019 / 051046 , the contents of which are incorporated herein by reference.

[0245] Additionally, the DLDB embodiments described herein may utilize a 1 / 2λ resonant piezoelectric transducer. The acoustic impedance of the acoustic stack designed for the DLDB is greater than that of the optical layer. It may also be effective for the intended load. If the load is comparable to or lower than the acoustic layer, the transducer will have a higher acoustic impedance than the load. The piezoelectric layer may include a piezoelectric layer having an impedance and one or more matching layers.

[0246] In some embodiments, DLDBs are used in conjunction with a 1 / 4λ stack in conjunction with mismatched layers. In another embodiment, the DLDB can be used in conjunction with a high acoustic impedance mismatch layer. This can be included in the design of a quarter-lambda resonant piezoelectric transducer. The mismatched layer allows the DLDB and piezoelectric This technology is suitable for specific material transducers, transducers with matching layers, and This can be applied to a load matching transducer, or any other practical load matching method.

[0247] By varying the thickness of the DLDB layer, the bandwidth of the transducer can be increased, resulting in a wider This can improve the reflectivity of the backing material across the frequency spectrum. Variations can be made depending on the intended application.

[0248] The relatively high acoustic insulation achieved by DLDB and the ability to make the layer thermally conductive make Therefore, it is possible to provide a heat sink directly on the proximal surface of the DLDB, resulting in Highly efficient heat removal directly from the backside of the piezoelectric element without impairing the acoustic properties of the transducer. It becomes possible to remove it.

[0249] DLDB provides relatively high acoustic insulation and allows the layer to be electrically conductive. To attach wires or other electrical circuits to the top layer of the DLDB, e.g., soldering Direct contact with the proximal surface of the DLDB can be achieved by using wire bonding, conductive epoxy, or It is possible to electrically connect the two.

[0250] In some embodiments, the DLDB can be further diced, e.g., into 1-D linear array, 2-D matrix array, or other multi-element transducer array. The piezoelectric elements of the transducer array can be aligned with each other, so that the The DLDB This allows for a highly efficient electrical connection to the transducer. This means that the ultrasound probe is a 2D multi-element array and the acoustic A relatively large number of elements can be used for each DLDB corresponding to each element of the array without compromising performance. It may be useful if the array is a 2D multi-element array that allows direct connection of these Embodiments are described in other paragraphs herein.

[0251] The backing material is relatively thin, and the backing material allows direct electrical current to the thin DLDB. Due to the ability to achieve efficient connection, this technology can be used to create a thin ultrasound probe. Examples of low-profile ultrasound probes include intracavity medical probes. probes used in lobes, endoscopes, and NDT cylindrical transducers and arrays Includes, but is not limited to:

[0252] In some embodiments, the DLDB has one or more layers, each layer being laterally electrically insulating. is electrically conductive in the axial direction, resulting in isotropic thermal conductivity; The electrically conductive layer is also made of a thermally conductive material which becomes anisotropic. The impedance layer is made of, for example, aluminum nitride (AIN) ceramic. The resonant impedance layer comprises a plurality of conductive vias arranged to align with the multi-element array elements. Other layers of the DLDB may be formed by, for example, dicing, etching, or machining. or by other means, electrically insulated and acoustically separated in the transverse direction. The two layers can be separated into separate elements and aligned with the elements of the piezoelectric array. Combined, the result is an electrical connection from each transducer element to the proximal surface of the DLDB. Next, the DLDB and the lateral current from one element to another across the piezoelectric stack. Air insulation and unbroken and / or continuous lateral heat conduction throughout the array of elements A conductive backing material is then provided. The heat dissipation of the transducer is then achieved by the PCB or Measures for certain cooling techniques while allowing direct electrical connection of the array to the interposer; For example, an air-to-air heat exchanger or a liquid-cooled heat sink can be used to transfer heat away from the surroundings of the AIN layer. Those skilled in the art will appreciate that this can be achieved by removing the acoustic insulation and / or Or, this method can be applied to stacking multiple DLDBs to increase thermal conductivity. This electrically isolated, thermally uninterrupted and / or continuous The use of DLDBs in 1-D, and especially 2-D, transducer arrays improves acoustic performance. It is possible to directly cool large arrays without compromising performance and has relatively simple electrical interconnections. This provides a cost-effective means of achieving this.

[0253] In some embodiments, the DLDB may be liquid cooled.

[0254] In some embodiments, titanium and other similar acoustic impedance materials, such as zirconium 680kHz material specific transducer with liquid-cooled DLDB for use with The transducer is 50mm diameter and stacked with double DLDB. can have:

[0255] The transducer is an exemplary embodiment of the present technology and is for illustrative purposes only. It should be noted that transducers other than those disclosed herein may be used by those skilled in the art. The invention may include several other elements known to those skilled in the art.

[0256] In some embodiments, the transducer is a 2.4 mm thick, 1-3 polarized complex. The thickness of the piezoelectric disc is approximately 0.35 to 0.4λ in the unloaded free resonance state. However, the polarized composite piezoelectric disk operates in 1 / 2λ mode, with the positive pole on the proximal surface and the negative pole on the distal surface. As will be appreciated by those skilled in the art, the mass loading effect of the DLDB backing material To compensate for the acoustic load, the thickness of the piezoelectric disc should be less than 1 / 2λ. The piezoelectric composites are 1000 μm × 10 mm squares separated by 200 μm kerfs. The substrate has 200 μm kerfs cut at a pitch of 1200 μm, leaving 00 μm pillars. The poled PZT4 material can be made by dicing and filling. The kerfs may be formed, for example, but not limited to, to reduce the acoustic impedance of the composite filler that fills the kerfs. The acoustic impedance of the entire piezoelectric composite layer is approximately 7 to 8 megarays (MR). Epotek® 301 was used to closely match titanium (approximately 27.5 MR). Composite filler consisting of approximately 5 μm hafnium dioxide particles doped in epoxy. The negative side of the piezoelectric composite layer can be filled with, for example, tungsten powder-filled epoxy. to bond to the proximal surface of a 6 mm thick ZA-8 zinc-aluminum alloy disc. The distal surface of the ZA-8 disc is then coated with submicron hafnium oxide. The proximal surface of the alumina composite disc was bonded using Epotek 301 epoxy filled with PEG. The alumina composite discs were separated by 200 μm kerfs. The support pillars may be 750 μm x 750 μm x 1400 μm (height), and the kerfs may be The composite disks are filled with the same hafnium particle-filled epoxy used to fabricate the composite disks. The distal surface of the alumina composite is filled with submicron hafnium oxide filled Epotek A layer of 301 epoxy was used to bond the proximal surface of a 3 mm thick titanium disc. Then, Epotek 301 epoxy filled with submicron tungsten powder is applied. Using the following, two sets of double-layered mismatched backing materials (DLDBs) were attached to the piezoelectric The proximal surface of the piezoelectric composite disc is bonded to a 1030 μm thick Poco Bonded to the distal surface of the DFP-1 graphite disc, Poco DFP-1 graphite The disc has an acoustic impedance of 5.1 MR and a thickness of 905 μm. corresponds to 1 / 4λ at the center frequency of the transducer, 680 kHz. The proximal surface of the graphite disk has an acoustic impedance of 100 MR and a thickness of 153 mm. The tungsten disc is bonded to the distal surface of the 0 μm thick tungsten disc. The length is 1 / 4λ at approximately 850 kHz, slightly above the center frequency of the transducer. The proximal surface of the tungsten disk then has an acoustic impedance of 5.1 M. R, bonded to the proximal surface of a 905 μm thick Poco DFP-1 graphite disc. The thickness is set at approximately 800 kHz, slightly above the center frequency of the transducer. The proximal surface of the graphite disk has an acoustic impedance of 41.5 The MR is bonded to the distal surface of a copper disc with a thickness of 1710 μm. The graphite disk and the tungsten disk correspond to 1 / 4λ in the first two layers. The graphite disc and copper disc constitute a mismatched backing stack. These two stacks work together to acoustically isolates the piezoelectric composite disk from the transducer's thermal cooling solution, thereby The thermal cooling element can be mounted directly on the proximal surface of the copper disc without substantially compromising the acoustic performance of the transducer. In these embodiments, a 1 mm thick, highly thermally conductive AlN disc can be bonded. The distal surface of the disk is bonded to the proximal surface of the copper disk using thermally conductive epoxy. The disk is attached to the copper using soldered wire or conductive epoxy bonded wire. A cutout is provided to accommodate space for electrical connections to the disk. The entire DLDB stack in this embodiment is electrically and thermally conductive, Allows direct electrical connection to the signal electrodes of the piezoelectric composite disc through the B-stack Furthermore, the materials explicitly described in this exemplary embodiment Beyond the materials, there are many other materials that can actually be used in applications of the disclosed technology, some of which are Note that some are electrically conductive, thermally conductive, both, or neither thermally nor electrically conductive. In this exemplary embodiment, all DLDB layers are electrically and thermally conductive. The proximal surface of the copper heat sink base is brazed or soldered to the distal end of the heat sink top. The heat sink assembly is then attached to the copper substrate to form a hollow copper heat sink assembly. The distal surface is directly connected to the proximal surface of the AIN disk using a thermally conductive but electrically insulating material. In the illustrated embodiment, the proximal surface of the top of the hollow heat sink is made of the same thermally conductive epoxy. The AIN disc is attached to the distal surface of the AIN disc using a stent. The disk has two clearance holes and one notch. the holes receive the cooling tubes, which are secured to the integral barbed tubes on top of the heat sink; The cutouts provide clearance passages for the signal wires attached to the copper DLDB layer. The proximal surface of the AIN disk is attached to a copper hub using thermally conductive epoxy. The copper housing shell can be bonded to the distal face of the ZA-8 device. It fits around the disk and is completely sealed using an electrically insulating and thermally conductive epoxy. In some embodiments, all of the air gaps can be bonded to the acoustic and thermal stack. The gap is filled with a thermally conductive and electrically insulating epoxy. The entire assembly, except for the hollow interior of the assembly (i.e., the top and bottom of the heat sink). The rubber hose is fitted onto the barbed hose boss on top of the copper heat sink, The hose is secured in place with a hose clamp, such as, but not limited to, a rubber hose. The transducer may have an inner diameter of 9.525 mm (3 / 8 inch). The electrical contact is made by a BNC RF electrical connector soldered to the copper lid. Furthermore, the center conductor of the BNC connector is soldered to the signal wire. Therefore, the BNC signal conductor is connected to the positive signal electrode of the piezoelectric composite disk. In some embodiments, a conductive epoxy can be used to electrically connect Solder or bond the copper lid to the proximal lip of the copper shell to ground the BNC connector. Electrical current flows from the terminal and the negative pole of the piezoelectric composite disc through the copper shell and the ZA-8 disc. The transducer is made of an electrically insulating plastic The housing is bonded to a copper lid and a copper shell, and the alumina composite It is placed on the front surface of the titanium disk, at least partially covering the edge of the disk. The resulting transducer (i.e., the assembly of the aforementioned components) is placed in a liquid circulation The cooling fluid is connected to an annular air-to-liquid heat exchanger and filled with a suitable cooling fluid. An example is a 50% propylene glycol / water mixture.

[0257] These embodiments can be used to fabricate a piezoelectric composite disc via a dual DLDB stack. The signal electrode is cooled directly, and the piezoelectric composite is cooled via the copper shell and ZA-8 disc. The ground electrode of the disk can be indirectly cooled. This reduces the cooling rate by approximately several liters per minute. It is possible to remove hundreds of watts of heat with a coolant flow rate of 1000 ml and a heat exchanger that does so. More specifically, in some embodiments, an ultrasonic transducer To enable such indirect cooling, the device includes a thermally conductive layer that is acoustically matched to the piezoelectric material. Additionally, the designs described herein provide high one-way bandwidths of over 90%. This allows for a wide bandwidth (e.g., 6 dB bandwidth for the example transducer) and allows for efficient use of the piezoelectric element. Direct cooling with a conventional liquid-filled metal heat sink produces negligible reverberation artifacts. It can be made as small as possible.

[0258] In some embodiments, a stack of piezoelectric layers and DLDBs for a liquid-cooled transducer Five layers can be stacked, and these layers can be applied to the entire surface or to parts of the surface. It will be readily apparent that the layers can be equally spread along only the The layer is a single element 1 / 2λ piezoelectric composite layer that matches the bass The layer is a high acoustic impedance 1 / 4λ graphite layer of the first DLDB stack. The layer is a low acoustic impedance 1 / 4λ tungsten layer in the second DLDB stack. The layer is a high acoustic impedance 1 / 4λ graphite layer in the first DLDB stack. It is a 1 / 4λ copper layer with a impedance of 1 / 4λ.

[0259] In some embodiments, the ultrasonic transducer comprises a titanium wear layer, an aluminum oxide The AlN composite includes an electrically insulating layer, a thermally conductive layer, an electrically conductive layer, and an acoustically conductive layer. For example, but not limited to, it may be made of zinc or a zinc alloy, which is a good thermal conductor. The transducer can be acoustically matched to titanium while also being The element includes an approximately 1 / 2λ piezoelectric composite layer. This layer can be matched to titanium. The transducer includes first and second DLDB stacks, each stack having a low acoustic impedance. More specifically, the first DLDB stack comprises: Low acoustic impedance 1 / 4λ graphite layer and high acoustic impedance 1 / 4λ tongue The second DLDB stack is made of low acoustic impedance 1 / 4λ graphite. The transducer according to this embodiment includes a copper layer and a high acoustic impedance 1 / 4λ copper layer. Additionally, the thermally conductive and electrically insulating layer may include, for example and without limitation: The transducer can be made of aluminum nitride. It includes a thermally conductive housing and an electrically insulating plastic outer housing. Other components of the heater include, but are not limited to, a heater having a hose cutout. Electrically insulating disc, water block heat exchanger base, made of aluminum , the top of the water block heat exchanger, a copper heat transfer layer with a hose cutout, copper Includes a housing lid, BNC RF electrical connectors and liquid cooling hoses.

[0260] In some embodiments, the copper layer of the DLDB is in direct thermal contact with the copper layer through an electrically insulating layer of AlN. and two DLDB stacks in place with fully electrically isolated liquid-cooled heat exchangers. An acoustic stack is provided.

[0261] In some embodiments, low impedance graphite with a thickness of 1 / 4λ (70 μm) A two-layered impermeable layer containing a 1 / 4λ (130 μm) thick high-impedance tungsten layer. Between the matching backing stacks, a 0.12λ (62.5 μm) thick tungsten mismatch A 10 MHz piezoelectric single element transducer stack is provided in which a layer is inserted. The transducer stack is a 115 μm thick PZT composite stack with 1_3 configuration, has a 62.5 μm tungsten mismatch layer and a two-layer mismatch backing stack The transducer according to this embodiment includes a 10 MHz piezoelectric stack matched to titanium. The transducer includes a single element 1 / 4λ piezoelectric composite layer that can be used for 0. The transformer includes a 12λ mismatch layer, which may be made of tungsten. The transducer also includes one DLDB stack, which can be made of graphite. Low acoustic impedance 1 / 4λ layer and high acoustic impedance 1 that can be made with tungsten 1 / 4λ layer.

[0262] In some embodiments, a 10 MHz piezoelectric composite transducer design is provided. The resonant stack may include a piezoelectric composite disk and a tungsten mismatch layer, The backing stack includes a graphite layer and a tungsten layer. , the acoustic impedance is about 25MR, and the thickness is 115μm, which is about 1 / 4λ. The piezoelectric composite disk has a positive electrode and a negative electrode on the proximal surface of the disk and a negative electrode on the distal surface. The thickness of the tungsten mismatch layer is 62.5 μm, which is approximately 0 The thickness of the graphite layer of DLDB is 70 μm, which corresponds to The thickness of the tungsten layer is 130 μm, which corresponds to 1 / 4 λ at 10 MHz. corresponds to 1 / 4λ at 10MHz. The acoustic stack is Cotronics 4461 The components are glued together using a low viscosity epoxy such as Epoxy. Electrical connections can be made as needed. This is done by filling the epoxy with a small amount of submicron tungsten powder. Those skilled in the art will appreciate that a quarter wavelength matching layer may be used to match the piezoelectric composite element to water. For purposes of this exemplary embodiment, two quarter wave matching layers are used. The first matching layer is bonded to the distal surface of the piezoelectric composite layer. The impedance of the first matching layer is about 10 MR, and the acoustic impedance of the second matching layer is about 3 MR. With or without a copper heat sink bonded to the proximal surface of the high acoustic impedance layer of the DLDB The results of the simulated test of this stack are shown in Figures 22a, 22b, 23a, and 23b. vinegar.

[0263] Next, different embodiments of an ultrasound transducer including a one-dimensional piezoelectric array will be described. do.

[0264] <Ultrasonic transducer including one-dimensional piezoelectric array> 7-12, an ultrasonic transducer array 200 is shown.

[0265] The ultrasonic transducer array 200 is a one-dimensional pressure transducer having a front surface 204 and a back surface 206. The one-dimensional piezoelectric array 202 is connected to a sample (not shown). As shown, the array 202 is aligned in one dimension. It includes a plurality of piezoelectric regions 203 .

[0266] The ultrasonic transducer array 200 also includes a back surface 206 of the one-dimensional piezoelectric array 202. The backing structure 208 includes a one-dimensional piezoelectric actuator. The beam 202 is configured to reflect acoustic energy toward the front surface 204 of the beam 202. In this embodiment, the backing structure 208 also reflects acoustic energy in phase. In some embodiments, the backing structure 208 is further configured to The acoustic reflections within the packing structure 208 are dispersed spatially and temporally. The backing structure 208 includes a two-layer mismatched backing material 210. In some embodiments, the backing structure 208 is both thermally and electrically conductive. In this embodiment, the top 209 of the backing structure 208 is constructed from an electrically insulating material. In some embodiments, the top 209 of the backing structure 208 comprises a layer of AIN. This layer is traversed by conductive vias 236, each of which is a one-dimensional array of The piezoelectric regions 203 are aligned with corresponding piezoelectric regions 203 of the plurality of piezoelectric regions 203. In the AlN layer, a front surface is formed, and the AlN layer has a plurality of piezoelectric regions arranged in one dimension. In order to enhance the acoustic isolation of adjacent piezoelectric regions 203, Dice cut.

[0267] The two-layer mismatched backing material 210 comprises a low acoustic impedance layer 212 and a high acoustic impedance layer 213. In some embodiments, the low impedance layer 212 and the high frequency The ultrasonic impedance layer 214 forms the first dual-layer mismatched backing material 210 and The transducer includes a second dual-layer mismatched backing material 216. The king material 216 is made up of a second low acoustic impedance layer 218 and a second high acoustic impedance layer Includes 220.

[0268] The ultrasonic transducer 200 also includes a pre-assembled electrical circuit 234. The path 234 is in electrical communication with the top 209 of the backing structure 208, thereby In some embodiments, the pre-assembled electrical circuit 234 is in electrical communication with the pre-assembled electrical circuit 234. At least one of the following: a front circuit board, an interposer, an integrated circuit, and an application specific integrated circuit Includes one.

[0269] In some embodiments, the ultrasonic transducer 200 may include a heater similar to those previously described. The heat sink is in thermal contact with the backing structure 208. In an embodiment, the heat sink includes at least one channel. Such a channel may include: The channels are configured to receive and circulate a heat transfer fluid. The heat transfer fluid may be a liquid. , gas, or any mixture thereof.

[0270] In some embodiments, the heat sink is electrically isolated from the backing structure 208. In some embodiments, the ultrasonic transducer 200 includes a backing structure 2 208 to the one-dimensional piezoelectric array 202. The wave transducer 200 comprises a one-dimensional piezoelectric array 202 and a backing structure 208. The control unit may be electrically connected to at least one of the sensors.

[0271] As shown, each piezoelectric region 203 is separated from the others by a gap 238 . The gap 238 is electrically insulating and preferably acoustically insulating. In the embodiment, the low acoustic impedance layer 210 and the high acoustic impedance layer 212 At least one of the first elements 240 is diced into a plurality of first elements 240, and a set of gaps 242 is formed. Each gap 242 in the first set may be separated from the others by a first set. The gaps 238 are aligned with corresponding ones of the gaps 238 separating the piezoelectric regions 203 . The gaps 242 in the first set are electrically insulating and preferably also acoustically insulating. In some embodiments, the second low acoustic impedance layer 218 and the second high acoustic impedance layer At least one of the dance layers 220 is diced into a plurality of second elements 244. The second set of gaps 246 may be separated from each other by a second set of gaps 246. Each gap 246 is a gap between corresponding gaps 238 separating piezoelectric regions 203. The gaps 246 in the second set are electrically insulating and preferably Preferably, it is also acoustically insulating. In some embodiments, the gaps 238 are The gaps 242 in the first set and the gaps 246 in the second set are thermally conductive.

[0272] In some embodiments, the ultrasonic transducer 200 is operable at an operating frequency. This operating frequency is related to the operating wavelength λo. impedance layer 214, a second low acoustic impedance layer 218, and a second high acoustic impedance layer The dance layers 220 each have a thickness corresponding to approximately λo / 4 or an odd multiple of λo / 4. do.

[0273] In one embodiment, the one-dimensional piezoelectric array 202 is configured to resonate at a half-wavelength at the operating frequency. will be done.

[0274] In another embodiment, the ultrasonic transducer 202 is connected to a one-dimensional piezoelectric array 202. The single mismatched layer 228 is disposed between the reflective layer 208 and the reflective layer 208. is in acoustic communication with the one-dimensional piezoelectric array and the matching backing structure 208. The layer 228 has a corresponding impedance that is relatively higher than the acoustic impedance of the one-dimensional piezoelectric array 202. The one-dimensional piezoelectric array 202 has a quarter-wave resonance at the operating frequency. In some embodiments, the one-dimensional piezoelectric array 202 is configured to The single mismatched layer 228 has a resonant frequency related to λr, and the single mismatched layer 228 In some embodiments, the single mismatch has a thickness of less than 2λr / 5 relative to the oscillation frequency. Layer 228 has a thickness of about λr / 10 to about λr / 20. One mismatch layer 228 is made of tungsten.

[0275] In some embodiments, the one-dimensional piezoelectric array 202 comprises struts separated by kerfs. In some embodiments, the kerfs are filled with a composite filler. In some embodiments, the SiO 2 film may include particles of hafnium dioxide doped in epoxy. In some embodiments, the epoxy may be Epoxy. It may be o-Tek® 301.

[0276] In some embodiments, the piezoelectric region 203 is comprised of a piezoelectric layer.

[0277] In some embodiments, the ultrasonic transducer 200 includes a backing structure 208 In some embodiments, the thermally conductive structure 230 is in contact with the , electrically insulated from the backing structure 208. In some embodiments, the thermally conductive structure Structure 230 is a layer of AlN or a layer of beryllium oxide. , the thermally conductive structure 230 extends over the lateral portions of the backing structure 208 .

[0278] In some embodiments, the ultrasonic transducer 200 includes a wear layer that is wear-resistant. 232. In some embodiments, the wear layer 232 is made of titanium.

[0279] In some embodiments, the ultrasonic transducer 200 has a diameter of about 50 mm. .

[0280] <Example> Below, other embodiments of ultrasound transducers are presented that include one-dimensional piezoelectric arrays.

[0281] In some embodiments, the chip is fully diced and electrically attached directly to the PCB. A 1-D linear array having a single DLDB backing layer is provided, which This allows for relatively easy electrical interconnection of the array, and also allows for ASIC or high density connectors. It even becomes possible to apply a vector to a stack relatively directly.

[0282] In some embodiments, the chip is fully diced and electrically attached directly to the PCB. A 16-element 1-D linear array with a single DLDB backing layer is provided. As mentioned earlier, this configuration allows for relatively easy electrical interconnection of the array. and even allow for relatively direct application of ASICs or high density connectors to the stack. The array may also include a protective wear layer. Alternatively, this layer may be The piezoelectric elements form a 1-D linear array, and each piezoelectric element The elements are separated from each other by gaps (or kerfs). The array also has a low acoustic impedance. The layer includes a 1 / 4 λ impedance layer, which is separated into elements with gaps between the elements, and The piezoelectric element is aligned with the low acoustic impedance layer. A 1 / 4λ layer is provided, which may be made of tungsten. The acoustic impedance layer is separated into elements with gaps between them and is arranged in an array. The array also has electrodes on the PCB surface, and the PCB and the plate are aligned. Vias in the printed circuit board connect the electrodes from one side to the opposite side.

[0283] In some embodiments, as will be appreciated by those skilled in the art, in order to optimize acoustic properties, The elements and layers forming a one-dimensional array or two-dimensional matrix are further separated into subelements. In some embodiments, the piezoelectric layer may be sub-diced. In other embodiments, the DLDB backing structure may be sub-diced, and In yet another embodiment, some layers of some DLDBs are sub-diced. These examples of arrayed transducers are for illustrative purposes only; Therefore, it should not be considered limiting. The ultrasonic transducer (or components thereof) of the present disclosure may include secondary dicing and Acoustic characteristics can be altered by manipulating the aspect ratio (e.g., by creating additional gaps). Furthermore, the DLDB backing structure may be modified to include these It may be applied to methods and techniques.

[0284] In some embodiments, the second (top) DLDB stack is laterally thermally coupled. A dual DLDB16 element linear array is provided having a continuous layer. The thermally conductive layer is an AIN However, it may be beryllium oxide or another suitable thermally conductive and electrically insulating material. , which includes conductive vias for connecting to the elements of the transducer. It can be cooled from the end and can be electrically connected directly, for example, using a PCB. As any contractor will understand, this trade-off between cooling area and PCB coverage is The relationship may be a trade-off depending on space and design needs.

[0285] In some embodiments, the second (top) DLDB stack is laterally thermally coupled. A dual DLDB16 element linear array is provided having a protective wear layer. Alternatively, the protective wear layer may be a lens or matching layer(s) depending on the application. Alternatively, the array may include piezoelectric elements, each of which has a gap (or kerf). ) to form a 1-D linear array. The array has gaps between the elements. The piezoelectric elements are separated into elements with low acoustic impedance and aligned in a line with the arrayed piezoelectric elements. High acoustic impedance 1 / 4λ layer and tungsten can be used The high acoustic impedance 1 / 4λ layers are separated into elements with gaps between the elements. The array has gaps between the elements. Another low acoustic impedance element that is separated into elements and aligned with the arrayed piezoelectric elements The high acoustic impedance layer is composed of a 1 / 4λ layer and another 1 / 4λ layer. The 1 / 4λ layer can be made of AlN and has no gap. means that the layer is continuous. This layer transfers heat laterally along the array. Vertical conductivity is provided by vias in the AIN layer. This allows electrical continuity between vertically adjacent layers. A printed circuit board and vias in the circuit board that connect electrodes from one side to the other Includes.

[0286] Next, an embodiment of an ultrasound transducer including a two-dimensional piezoelectric matrix is ​​presented.

[0287] <Ultrasonic transducer containing a two-dimensional piezoelectric matrix> 14 to 16, an ultrasonic transducer 300 is shown.

[0288] The ultrasonic transducer 300 is a two-dimensional piezoelectric matrix having a front surface 304 and a back surface 306. The two-dimensional piezoelectric matrix 302 is connected to a sample (not shown). In the following paragraphs, we will explicitly refer to the 2D matrix. As mentioned above, such a 2D structure is arranged symmetrically with respect to the center of the ultrasonic transducer. Those skilled in the art will appreciate that this may be implemented by an annular array with a circular gap positioned therebetween. In fact, the 2D matrix can be implemented with any array shape. It is possible.

[0289] The ultrasonic transducer 300 also includes a back surface 306 of the two-dimensional piezoelectric matrix 302. The backing structure 308 is configured to absorb acoustic energy. The piezoelectric matrix 302 is configured to reflect light toward the front surface 304 of the two-dimensional piezoelectric matrix 302. In some embodiments, the backing structure 308 reflects acoustic energy in phase. In some embodiments, the backing structure 308 is further configured to The acoustic reflections within the casing structure 308 are distributed spatially and temporally. The backing structure 308 includes a two-layered non-conformal backing 310. In some embodiments, the backing structure 308 is both thermally and electrically conductive. In an embodiment, the top 309 of the backing structure 308 is made from an electrically insulating material. In some embodiments, the top 309 of the backing structure 308 is in contact with the conductive via 33. 3. The conductive vias 336 include a layer of AlN intersected by vias 336, each of which connects a plurality of piezoelectric regions 3 303. In some embodiments, the piezoelectric element 303 is made of AlN. The layer has a front surface, and the AlN layer is configured to contact adjacent piezoelectric regions 303 of the plurality of piezoelectric regions 303. It is partially diced from the front side to enhance acoustic isolation.

[0290] The two-layer mismatched backing 310 comprises a low acoustic impedance layer 312 and a high acoustic impedance layer 313. In some embodiments, the low acoustic impedance layer 312 and the high The acoustic impedance layer 314 forms the first dual-layer mismatched backing material 310, and the ultrasonic transducer The lancer includes a second dual layer non-conforming backing material 316. The insulating material 316 is formed between the second low acoustic impedance layer 318 and the second high acoustic impedance layer 319. Includes 20.

[0291] The ultrasonic transducer 300 also includes a pre-assembled electrical circuit 334. The path 334 is in electrical communication with the top 309 of the backing structure 308, so that the piezoelectric material In some embodiments, the pre-assembled electrical circuit 334 is in electrical communication with the pre-assembled electrical circuit 334. At least one of the following: a front circuit board, an interposer, an integrated circuit, and an application specific integrated circuit Includes one.

[0292] In some embodiments, the ultrasonic transducer 300 may include a heater similar to those previously described. The heat sink should be in thermal contact with the backing structure 308. In some embodiments, the heat sink includes at least one channel. The channel is configured to receive and circulate a heat transfer fluid therein. The body may be a liquid, a gas, or any mixture thereof. , the heat sink is electrically isolated from the backing structure 308 .

[0293] In some embodiments, the ultrasonic transducer 300 includes a backing structure 308 The piezoelectric substrate 302 includes one or more electrodes electrically connected to the two-dimensional piezoelectric matrix 302 via a The acoustic transducer 300 comprises a two-dimensional piezoelectric matrix 302 and a backing structure 303. 08. The device may include a control unit electrically connected to at least one of the sensors 08.

[0294] As shown, each piezoelectric region 303 is separated from the others by a gap 338 . The gap 338 is electrically insulating and acoustically insulating. Similarly, in some embodiments, At least one of the low acoustic impedance layer 310 and the high acoustic impedance layer 312 The first element 340 is diced into a plurality of first elements 340 and is separated by a first set of gaps 342. Each gap 342 in the first set may be separated from each other by a piezoelectric region 303. The gaps 338 in the first set are aligned with the corresponding gaps 338 separating the first set. The gap 342 is electrically insulating and acoustically insulating. At least one of the acoustic impedance layer 318 and the second high acoustic impedance layer 320 The other end is diced into a plurality of second elements 344, which are then diced into a second set of gaps 346. Each gap 346 in the second set may be separated from the piezoelectric region 30 3. The second set of gaps 338 are aligned with the corresponding gaps 338 separating the first set of gaps 338. The gap 346 in the gap is electrically insulating and acoustically insulating. gap 338, gap 342 in the first set and gap 34 in the second set 6 is thermal conductivity.

[0295] In some embodiments, the ultrasonic transducer 300 is operable at an operating frequency. This operating frequency is related to the operating wavelength λo. The acoustic impedance layer 314, the second low acoustic impedance layer 318 and the second high acoustic impedance layer Each of the dance layers 320 has a thickness corresponding to approximately λo / 4 or an odd multiple of λo / 4. do.

[0296] In one embodiment, the two-dimensional piezoelectric matrix 302 is configured to resonate at half wavelength at the operating frequency. It is composed of:

[0297] In another embodiment, the ultrasonic transducer 300 comprises a two-dimensional piezoelectric matrix 302 and the backing structure 308. 328 is in acoustic communication with the two-dimensional piezoelectric matrix and matching backing structure 308 The single mismatch layer 328 forms a gap that aligns with the gap formed in the piezoelectric matrix 302. The single mismatched layer 328 may have a conductive layer. is a corresponding acoustic impedance that is relatively higher than the acoustic impedance of the two-dimensional piezoelectric matrix 302. The two-dimensional piezoelectric matrix 302 has a quarter wavelength at the operating frequency. In some embodiments, the two-dimensional piezoelectric matrix 302 is configured to resonate. , the single mismatched layer 328 has a resonant frequency related to the resonant wavelength λr, and the single mismatched layer 328 is a two-dimensional piezoelectric matrix. The thickness of the filter 302 is less than 2λr / 5 relative to the resonant frequency of the filter 302. In the example, the single mismatched layer 328 has a thickness of about λr / 10 to about λr / 20. In an embodiment, the single mismatch layer 328 is made of tungsten.

[0298] In some embodiments, the two-dimensional piezoelectric matrix 302 is separated by kerfs. In some embodiments, the kerfs are filled with a composite filler. may include particles of hafnium dioxide doped in epoxy. In some embodiments, the composite filler may be in the 0-3 configuration. may be Epo-Tek® 301.

[0299] In some embodiments, the piezoelectric region 303 is comprised of a piezoelectric layer.

[0300] In some embodiments, the ultrasonic transducer 300 includes a backing structure 308 In some embodiments, the thermally conductive structure 330 is in contact with the , electrically insulated from the backing structure 308. In some embodiments, the thermally conductive structure Structure 330 is a layer of AlN or a layer of beryllium oxide. , the thermally conductive structure 330 extends over the lateral portions of the backing structure 308 .

[0301] In some embodiments, the ultrasonic transducer 300 includes a wear layer that is wear-resistant. 332. In some embodiments, the wear layer 332 is made of titanium.

[0302] In some embodiments, the ultrasonic transducer 300 has a diameter of about 50 mm. .

[0303] <Example> Next, another embodiment of an ultrasonic transducer including a two-dimensional piezoelectric matrix is ​​presented. do.

[0304] In some embodiments, a 2-D matrix transformer with two DLDB stacks is used. The upper layer of the second stack is a continuous layer of AlN with conductive vias. The thermally conductive layer is equivalent to a 2D version of the 1D transducer described above. Correct.

[0305] In some embodiments, the second (top) DLDB stack is laterally thermally coupled. A dual DLDB 16x16 element matrix array with adjacent layers is provided. The 2D transducer includes a protective wear layer. may alternatively be replaced by lenses, matching layers, or other acoustic structures depending on the application across the entire spectrum of the instrument. The matrix transducer has gaps in two axes. 2-D linear or matrix arrays separated from each other by kerfs (or kerfs) The matrix transducer includes piezoelectric elements that form a matrix of elements in two axial directions. Low acoustic pressure is achieved by aligning piezoelectric elements in a line, separated into elements with gaps between them. Impedance 1 / 4λ layers and high acoustic impedance can be made from tungsten The high acoustic impedance 1 / 4λ layer is composed of elements in two axial directions. The piezoelectric element is separated into elements with gaps between them, and is aligned in a line with the arrayed piezoelectric elements. These layers define the first DLDB stack. The transducer includes a second DLDB stack. The second DLDB stack has two axial The piezoelectric elements are separated into elements with gaps between them, and are aligned in a line with the arrayed piezoelectric elements. Includes aligned low acoustic impedance 1 / 4λ layers and high acoustic impedance 1 / 4λ layers. This layer is entirely continuous and made of AlN. In this context, "continuous" The term "gas-less" refers to a stack that has no gaps and conducts heat laterally along both axes of the array. Vertical conductivity is provided by conductive vias in the AlN layer. This layer is particularly useful for maintaining the interior of the 2D array isothermal relative to the edge elements.

[0306] <Low acoustic impedance layer and high acoustic impedance layer for ultrasonic transducer> Turning now to Figure 17, an ultrasonic transducer 400 is shown. The transducer 400 includes a piezoelectric material 402 having a front surface 404 and a back surface 406. The material 402 is configured to be in acoustic communication with a sample (not shown in FIG. 17). The ultrasonic transducer is disposed on the back surface 406 of the piezoelectric material 402, and a backing structure configured to reflect acoustic energy toward the front surface 404 of the material 402; The backing structure 408 includes a first two-layered mismatched backing material 410 and and a second two-layer mismatched backing material 416 .

[0307] The first two-layer mismatched backing material 410 comprises a first low acoustic impedance layer 412 and a first The second two-layer mismatched backing material 416 includes a high acoustic impedance layer 414. The second two-layer mismatched backing material 416 is connected to the first two-layer mismatched backing material 410. It includes a second low acoustic impedance layer 418 and a second high acoustic impedance layer 420 .

[0308] The ultrasonic transducer 400 is a Any one of the features described with respect to the ultrasonic transducer 200 and the ultrasonic transducer 300 Note that the number of entries may include more than one.

[0309] Now, looking at FIG. 18, an ultrasonic transducer having a sample contact portion 504 and a back surface 506 is shown. The transducer 500 is shown. The back portion 506 is opposite the sample contact portion 504. The acoustic transducer 500 is in acoustic communication with the sample (not shown in FIG. 18). The ultrasonic transducer 500 includes a piezoelectric material 502 configured to transmit a The material 502 includes a backing structure 508 in acoustic communication with the material 502. directs acoustic energy toward the sample contact portion 504 and toward the ultrasonic transducer 506. The backing structure 508 is configured to reflect light away from the back 506 of the optical fiber 500. includes a low acoustic impedance layer 512 and a high acoustic impedance layer 514. In this embodiment, the low acoustic impedance layer 512 and the high acoustic impedance layer 514 are The first two-layer mismatched backing material 510 is formed, and the ultrasonic transducer is mounted on the second two-layer mismatched backing material 510. The second two-layer mismatched backing material 516 includes a second low acoustic impedance. The second high acoustic impedance layer 518 and the second high acoustic impedance layer 520 are included.

[0310] In some embodiments, the piezoelectric material 502 is diced into multiple piezoelectric regions and They are separated from each other by a gap. The gap is electrically insulating and acoustically insulating. Low acoustic At least one of the impedance layer 510 and the high acoustic impedance layer 512 is The die is diced into a number of first elements separated from each other by a first set of gaps. Each gap in the first set may be a corresponding one of the gaps separating the piezoelectric regions. The gaps in the first set may be electrically insulating and acoustically insulating. Similarly, the second low acoustic impedance layer 518 and the second high acoustic impedance layer At least one of the 520 is diced into a plurality of second elements, and a set of gaps Each gap in the second set separates the piezoelectric regions. The gaps are aligned with the corresponding gaps in the gaps. The gaps in the second set are electrically insulating and acoustically insulating.

[0311] The ultrasonic transducer 500 is a Regarding the ultrasonic transducer 200, the ultrasonic transducer 300, and the ultrasonic transducer 400 It should be noted that the present invention may include one or more of any of the features described above.

[0312] Various embodiments of the ultrasonic transducer have been described so far. The performance of some of the embodiments, more particularly, the ultrasonic transformers described herein Describe the results that can be achieved by using a transducer.

[0313] <Example of results> Figure 19a shows the conventional air-barrier propagation in titanium at 680 kHz without a heat sink. Coking specific material transducer (see above) (see PCT / CA2019 / 051046) The contents of which are incorporated herein by reference) operate under the same conditions as those disclosed herein. This is a comparison with the double DLDB specific material transducer. There is a typical slight decrease in bandwidth due to additional in-phase reflections, which is The bandwidth of the air-backed transducer was 105%, -6dB, which is This is only about 1 dB lower than the current state-of-the-art air-backed design. The efficiency is decreasing.

[0314] Figure 19b shows the energy transfer of an existing air-backed material-specific transducer transmitting through titanium. Logarithmic graph of envelope (above) and the dual DLDB described herein propagating through titanium. This is a comparison with the logarithmic graph of this technology (see below) illustrated in Figure 1. Those skilled in the art will understand that DLD The energy reflected from the backing material spreads over time within B and decays exponentially. You will notice that the energy in the tail of the transmitted wave is This is undesirable in itself, but as mentioned above, In addition, this is desirable when considering the case where a heat sink is attached to the backside of the stack.

[0315] Figure 20 shows three 68-well piezoelectric devices with copper heat sinks attached to the backside of the piezoelectric stacks. This is a comparison of 0kHz specific material transducers, and the piezoelectric element of the transducer is Air-backed specific material transducer with direct bonded heat sink (above), aluminum The transducer is made of an acoustically lossy and thermally conductive material such as silicon-filled foam. Existing method for bonding a heat sink to a piezoelectric element (center image) and double DLDB stack and a specific material transducer with a heat sink bonded directly to the top of the DLDB stack. As can be seen, in the design with dual DLDB, the stack as seen in typical current technology transducers when a heat sink is attached to the Furthermore, in the first two graphs, the heat sink The transducer output in the figure above is reduced by 4 dB due to the acoustic energy lost to the The design in the center shows a drop of about 3 dB. However, the transducer with dual DLDBs The heat sink was bonded or joined to the piezoelectric stack without any loss in sensitivity or bandwidth. Existing approaches that use thermally conductive but acoustically lossy layers to achieve this have not produced useful devices. To achieve this, a relatively large compromise in both acoustic performance and thermal conductivity is generally required. On the other hand, the thermal conductivity of the design with DLDB is higher than that of the transducer design in the center figure. It was noted that the conductivity was more than an order of magnitude higher and at the same time showed no echo artifacts. stomach.

[0316] FIG. 21 is a logarithmic scale diagram of the envelope of the waveform shown in FIG. Transducer with DLDB (see below) when sink is attached to the back of the stack Note that unwanted echoes within the DLDB are significantly reduced. The SNR (below) in the existing stack is still above 35dB. Note that the SNR in the figure above and in the center is less than 3 dB, making it practically unusable. I want to be done that.

[0317] Figure 22a compares a 10MHz single element transducer and shows the Regarding the effect of adding a single DLDB backing material to the backside of a composite backing material, A 4λ resonant piezoelectric element and a tungsten mismatched layer backing material (DML) of approximately 1 / 10λ thickness. This shows a comparison of pulse response in both directions. Note that there is almost no change in the insertion loss. They differ in some respects and have similar bandwidths.

[0318] Figure 22b shows the envelope of the 10 MHz single-element transducer waveform shown in Figure 22a. The effect of DLDB is shown in the logarithmic graph of the comparison of the reflected energy from the backing. Note that the goal is to redistribute the energy at a low level and spread it out over time. The effect is flat when viewed on pulse-echo (bidirectional) signals. Existing DML stack The SNR is over 70 dB in the DLDB stack (bottom figure) compared to the SNR in the DLDB stack (top figure). The SNR in conventional imaging is limited to about 47 dB, while in medical imaging applications it is at least 60 dB. Therefore, in image processing, this SNR is often Even medical imaging applications are acceptable. Therapeutic medical applications, as well as NDT and other industrial applications. Generally, stacks with DLDB are acceptable for use. Ringing tail length Note that is improved by the stack with DLDB.

[0319] Figure 23a shows the 10MHz acoustic stack in Figure 22a with a 3mm thick copper heat sink on the backside. This is a comparison of the effect of adding a direct heat sink. The DML backing material introduces artifacts that are undesirable for imaging or inspection applications. This creates multiple internal reflections (above), and the stack with DLDB is When bonded directly to the front of the tack, it undergoes no measurable change (see below).

[0320] Figure 23b shows the envelope of the pulse-echo waveform of the 10 MHz transducer shown in Figure 23a. The graph shows a comparison of the logarithmic graph of the rope. Adding a heat sink (above) reduces the SNR to less than 3 dB, which is inadequate for most applications. On the other hand, a transducer equipped with this technology can be used in a DLDB style. When a copper heat sink or similar device such as a PCB is directly bonded to the adjacent layer of the block, Note that the SNR is over 50 dB.

[0321] FIG. 24 shows a 550μ piezoelectric transducer with a PZT composite piezoelectric element aligned to transmit in titanium. Pulse-echo response from a 5 MHz 1D array element of m × 5 mm specific material, double DL Comparison of DB backing and air backing. Air-backed transducer (top) and transducer with DLDB (bottom) There is minimal difference between the two, except for a slight increase in pulse length seen in the stack with DLDB. I can only see the difference.

[0322] Figure 25 shows the pulse-echo response of the transducer element shown in Figure 24 and the acoustic A 6mm copper heat sink was directly bonded to the back of the stack. When a heat sink is bonded to the backside of an air-backed transducer, While the ,shown in the figure above, the DLDB The acoustic stack is not affected by the addition of a heat sink (see below). More specifically, the figure below corresponds to the one-dimensional piezoelectric array described above. Also, soldering wires or connecting DLDB material between holes in PCB or ceramic is not recommended. Bonding or soldering to the backside of the element does not degrade the acoustic performance of the transducer element. It is noted that this paves the way for relatively simplified array transducer designs without oversimplifying the design. I want to be.

[0323] <Further theoretical considerations> Having now described different embodiments of the technology and performance, we now turn to further theoretical As mentioned earlier, the backing structure may consist of one or more double-layered mismatched backing layers. Each DLDB contains two layers. The layers may be in direct acoustic communication, for example, but not by way of limitation. In embodiments, the layers can be adhesively bonded together. The thickness of each layer in the DLDB stack is It can be about 1 / 10λ to 1 / 2λ, and in some embodiments, about 1 / 4λ. In some embodiments, the ultrasound transducer comprises two DLDB stacks, That is, graphite disk, tungsten disk, graphite disk, and copper The four layers are arranged proximally from the piezoelectric composite disc. The piezoelectric composite reflects most or virtually all of the acoustic energy emitted into the Nearly all of the acoustic energy emitted from the disc is transmitted out the distal surface of the titanium disc. Two sets of double layered mismatched backing materials (DLDBs) are defined, which work together to achieve In these embodiments, the titanium disc acts as the outer wear layer, and the intended titanium It acts as the primary point of ultrasonic coupling into the load, and within this titanium load, the transducer transmits However, the transducer with the DLDB stack has a lens, a matching layer, and and any number of outputs, known or yet to be known in the art, such as delay lines. Note that the configuration can also work with materials having different acoustic impedances. The sound pressure reflection occurring at the interface of the material is calculated according to the reflection coefficient R given by the following equation: .

[0324] R = (Z2 - Z1) / (Z2 + Z1) (1)

[0325] At the same time, the pressure transmitted from one material to the other is calculated from the transmission coefficient T according to the following formula: can be.

[0326] T=2Z2 / (Z2+Z1) (2)

[0327] where Z1 is the acoustic impedance of the medium through which the sound wave is traveling, and Z2 is is the acoustic impedance of the medium through which the sound wave is traveling. In other words, when a sound wave travels from a low acoustic impedance to a high acoustic impedance, The sign of the reflection coefficient becomes positive, and the sound wave moves from a high acoustic impedance medium to a low acoustic impedance medium. Those skilled in the art will appreciate that the sign of the reflection coefficient is negative when traveling into the body. The permeability coefficient is always positive. By arranging the layers in the DLDB, the titanium in the first layer of the DLDB It effectively reflects nearly all acoustic energy in phase toward the distal surface of the wear layer. Furthermore, the alternating highly acoustically inconsistent 1 / The presence of four wavelength layers allows each layer to resonate and produce very large waves over a very long time frame. Acoustic energy entering the layer at low amplitudes will be redistributed, resulting in unwanted vibrations. This causes the stimulating reflex to spread over time at a low amplitude. B, or between the back surface of the DML and the first low acoustic impedance layer of the DLDB. The early reflections that occur between the transducer and the impedance layer have a significant effect on the overall efficiency of the transducer. In the case of a half-wave resonant transducer, the piezoelectric element and the DLDB are generally Note that the acoustic impedance mismatch between the first low acoustic impedance layer and the second low acoustic impedance layer is maximized. This effect is most noticeable when using a 1 / 4λ transducer design with DML. Although it is not very large, it still affects the overall performance of DLDB.

[0328] The first layer of DLDB is made of graphite or other materials, silver-plated hollow glass spheres, and low-density conductive epoxy, or a composite of graphite and epoxy, or magnesium and By using a composite of low acoustic impedance metals such as epoxy, the piezoelectric element and While maintaining a high initial reflection coefficient between the first layer of DLDB, The exemplary materials listed above can maintain both thermal and electrical conductivity. By using the above, the electrical conductivity and thermal conductivity can be changed as needed, and the Acoustic impedance of ~6MR can be easily obtained. However, the DLDB layer is conductive. It is not necessary that the material be made of a thermally conductive material, but it is within the scope of this specification. Nor should it be construed as limiting the scope of the DLDB. It is desirable that some or all layers of the block be made from thermally insulating or electrically insulating materials. An example of a non-conductive DLDB stack is approximately 1 / 4 wavelength. The thickness of the layer is approximately a quarter wavelength thick, and the thickness is a layer of Rexolite (cross-linked polystyrene) bonded to a thick layer of alumina. Additionally, the layers of the DLDB stack are made of hybrid materials such as AlN with conductive vias. The second layer next to the DLDB is made of a low acoustic impedance material. The impedance mismatch between the tandem and the base layer should be maximized. Tungsten metal, molybdenum metal, tungsten carbide, and other high acoustic impedance materials Such materials have a good combination of high acoustic impedance, good thermal conductivity, and good electrical conductivity. can be tailored to a particular application and still fall within the scope of the present technology. Note that many other materials exist.

[0329] The effect of the DLDB stack can be explained by the following simplified theory. The first step is to consider the function in an infinitely narrow bandwidth at the center frequency of the transducer. The second step is to consider each layer to be exactly 1 / 4λ at the center frequency. These assumptions are based on the assumption that each DLD is optimized to extend the effective bandwidth of the device. Those skilled in the art will readily appreciate that this is not the case in practical devices where each layer of B is relatively broadband. However, to clarify the overall functionality of the DLDB stack, Therefore, in the narrow band case, all DLDB layers are assumed to be 1 / 4 times the wavelength of the center frequency. We will consider this case as a highly contrasting acoustic impedance. A quarter wavelength layer of piezoelectric material is stacked adjacent to the piezoelectric composite layer for a half-wave resonant piezoelectric design. When stacked on top of each other, or adjacent to a mismatched layer in the case of a quarter-lambda resonant piezoelectric design, The reflection coefficient at the boundary is high (e.g., preferably above 80%), so that A series of acoustically isolated, strongly resonant layers are created. The effect of the backing is illustrated by an example. 13, the acoustics disclosed herein are more easily affected. Using the tack embodiment, first, the acoustic wave traveling from the piezoelectric layer to the first graphite layer is 18 Under a 0° phase change (negative reflection coefficient), 69% of the reflection returns to the piezoelectric layer, and the remaining 31% It can be seen that the sound waves are transmitted to the graphite layer. The layer reverberates within the phytolayer, so that all trips across the layer are in phase, and the layer is 1 / The wave is resonated at 4 wavelengths. The wave is reflected at the boundary with the tungsten layer by 90% and at the boundary with the piezoelectric layer by The reverberating sound waves in the graphite layer are reflected by the near wall of the graphite layer. Only after an odd number of reflections, i.e., after the 1st, 3rd, 5th, etc. reflections, in the piezoelectric layer Those skilled in the art will understand that the reflected light is in phase when it returns to the ground. The sound waves in the graphite layer are reflected from the near wall of the graphite layer even times, i.e., 2 You will also notice that after the 4th, 5th, 6th, etc. reflections there is a phase shift. The acoustic pressure wave transmitted from the graphite layer to the adjacent tungsten layer is After an even number of reflections from the wall, the beam is in phase, so that the 0th, 2nd, 4th, etc. reflections The beams travel to the tungsten layer and undergo constructive interference within the tungsten layer. It was also noted that the 1st, 5th, etc. reflections undergo destructive interference within the tungsten layer. A first approximation of the combined effect of each DLDB is the energy of each acoustic pulse over time. The energy is spread out so that the amplitude of each echo decays exponentially. As clearly shown in Figures 9a and 19b, the exponentially decaying acoustic "theme" at very low levels The impulse response of the ultrasonic transducer is Although adding damping ringdown to the impulse response is generally undesirable, DLDB This negative effect is compensated for in two ways: first, the ringdown is at a very low level; , which is typically -35dB for one-way applications and -50dB for two-way applications. Second, D The impulse response of a transducer with an LDB is generally determined by the desired device, such as a heat sink. It is unaffected by the addition of devices and electrical connections to the transducer stack. the piezoelectric material or the proximal surface of the mismatched layer of the transducer. A communicating heat sink, PCB, or other similar structure is in direct contact with the transducer. When combined with the DLDB, the first layer has excellent phase reflectivity, The impulse response of the transducer is calculated by inserting a DLDB stack between them. Those skilled in the art will note that the improvement is typically about -20dB to -30dB. Similarly, the energy transferred to the backside of the DLDB stack is transferred through the resonant layer and also The amplitude of the wave reaching the proximal surface of the DLDB pair decreases as the time passes due to diffusion. The heat sink, PCB, and and / or the like, with little or no effect on the acoustic performance of the stack. The DLDB stack may be bonded to or otherwise adjacent to the proximal surface of the DLDB stack. If Figure 13 is adapted to present the broadband case, the out-of-phase reflections will be occurs at frequencies such that in-phase reflections can be observed towards the front face of the ultrasonic transducer. It is noteworthy that the out-of-phase reflections interact with each other in a random and often destructive manner. Therefore, out-of-phase reflections occur at the designed operating frequency. This will be less important than the in-phase reflections.

[0330] The logarithmic graph of the envelope for the 680 kHz liquid-cooled transducer shown in Figures 19b and 21 Observing the roughness, the effect of temporal diffusion of acoustic energy within the DLDB layer is clearly visible. It is possible.

[0331] This highly effective isolation in a relatively small space is achieved by , soldered wires, ASICs and other desired structures, The goal is to allow direct connection to the stack, e.g. by soldering, to the acoustic stack of the array via electrical interconnect wiring, e.g., via off-the-shelf high-density electrical connectors. The wires can be electrically connected directly to the imaging array, which is pre-soldered to the PCB. Those skilled in the art will appreciate the benefits of using anisotropic conductive tape. This allows the ASIC to be attached directly to a 1D or 2D array relatively easily without compromising acoustic performance. Those skilled in the art will understand that the present invention can be applied to various devices.

[0332] The embodiments of the technology described herein are associated with several advantages presented herein. As a body, it is DL rather than existing low acoustic impedance absorbing backing or simple DML layer. The DB is used to mount electrical components, heat sinks, or other desired structures in a minimal amount of space ( and / or limited space) to allow direct connection to the acoustic stack. Furthermore, the DLDB may be configured to, for example, but not limited to, Due to their small size, they are more spatially confined than catheter-based transducers This allows for the assembly of a transducer in a given application.

[0333] In embodiments where the set of DLDBs includes graphite and tungsten, the Up to 97% of the radiation travels from the front of the transducer to the isotropic position before reaching the back wall of the tungsten layer. If the transducer includes a second pair of DLDB layers, the The two pairs of DLDB layers can reduce the sound pressure reaching the backside of the second tungsten layer by more than 70 dB. Any reflections or reverberations generated by the PCB or heat sink at its surface will be reflected in the dB stack. The second DLDB is not suitable for electrical or thermal reasons. , even when using a second layer of low acoustic impedance such as copper or aluminum nitride. In practice, the results are good, and in some cases the electrical interconnect wiring and and / or heat sinks are almost completely acoustically isolated.

[0334] The high and low acoustic impedance layers of DLDB are made from solid materials. After dicing, conductive acoustic composites such as graphite are Sputtering and epoxy filling make the acoustic impedance about 2.5MR to about 4MR. It can be made by forming a highly electrically and thermally conductive layer or by mixing it into an epoxy, for example. It should be noted that the material can be made from, but is not limited to, silver-plated microballoons. I want to be done that.

[0335] Conductive backings can adversely affect the acoustic performance of PCBs, ASICs, or even devices in that it allows for direct attachment of soldered or wired joints that have The electrical properties of the backing can be useful.

[0336] In addition, by using a thermally conductive backing material for DLDB, high performance materials such as PMN-PT can be used. Highly efficient heat dissipation of piezoelectric elements is being promoted to critical conditions with the development of relaxor and related materials The thermal properties of the backing may also be useful in that they allow

[0337] From a theoretical standpoint, there is generally no limit to the frequency range over which DLDB backing works. From a practical standpoint, the frequency should be at least 10 MHz or higher depending on the situation. From 100kHz and possibly 50Mhz with sufficient process control. Hz or up to 100 MHz can be used.

[0338] Several alternative embodiments and examples are described and illustrated herein. The above embodiments are provided for illustrative purposes only. Those skilled in the art will recognize possible combinations and variations of the components. Any of the embodiments may be provided in any combination with any other embodiment disclosed herein. Therefore, the present embodiment and the embodiment are to be considered in all respects as illustrative and non-restrictive. Although specific embodiments have been illustrated and described above, they are not intended to be limiting unless otherwise specified. Many modifications may be envisaged without significant deviation.

Claims

1. In an ultrasonic transducer, a piezoelectric material having a front surface and a back surface configured to be in acoustic communication with the sample; the piezoelectric material; A piezoelectric material is disposed on the rear surface of the piezoelectric material and is configured to direct acoustic energy toward the front surface of the piezoelectric material. a backing structure configured to reflect light and that is thermally and electrically conductive, a first two-layer mismatched backing material; a first graphite layer; and a layer of tungsten in contact with the first graphite layer; the first two-layered mismatched backing material having a second two-layer mismatched backing material in contact with the first two-layer mismatched backing material; 、 a second graphite layer; and a copper layer in contact with the second graphite layer; the second two-layered mismatched backing material having the backing structure comprising: a heat sink in thermal contact with the backing structure; and one or more electrodes in electrical communication with the piezoelectric material; An ultrasonic transducer comprising:

2. 2. The ultrasonic transducer according to claim 1, wherein the heat sink comprises at least one a heat transfer fluid receiving and circulating within the channel; The ultrasonic transducer is configured as follows.

3. 3. The ultrasonic transducer of claim 2, wherein the heat transfer fluid is a liquid. Sonic transducer.

4. 4. The ultrasonic transducer according to claim 1, wherein the heater the transducer is electrically isolated from the backing structure.

5. 5. The ultrasonic transducer according to claim 1, wherein the ultrasonic The wave transducer is operable at an operating frequency related to an operating wavelength (λo), and the first graphite layer, a tungsten layer in contact with the first graphite layer, The second graphite layer and the copper layer are each approximately λo / 4 or an odd multiple of λo / 4. an ultrasonic transducer having a thickness corresponding to

6. 6. The ultrasonic transducer according to claim 5, wherein the piezoelectric material is an ultrasonic transducer configured to resonate at a half wavelength.

7. 6. The ultrasonic transducer according to claim 5, further comprising: a piezoelectric material and a backing. a single mismatching layer disposed between the piezoelectric material and the piezoelectric structure, the single mismatching layer being the single mismatching layer is in acoustic communication with the piezoelectric material and the backing structure; a corresponding acoustic impedance relatively higher than the acoustic impedance of the material, The dielectric material is configured to have a quarter wavelength resonance at the operating frequency. Consumer.

8. 8. The ultrasonic transducer according to claim 7, wherein the piezoelectric material has a resonant frequency. , the resonant frequency is related to a resonant wavelength λr, and the single mismatched layer is An ultrasonic transducer having a thickness relative to the wavenumber that is less than 2λr / 5.

9. 9. The ultrasonic transducer of claim 8, wherein the single mismatched layer has a frequency of about λr / 10 An ultrasonic transducer having a thickness of about λr / 20.

10. 10. The ultrasonic transducer according to claim 7, wherein the single The mismatching layer is made of tungsten.

11. 11. The ultrasonic transducer according to claim 1, wherein the pressure The dielectric material is an ultrasonic material having acoustic properties with an acoustic impedance of about 27.5 MRayleigh. Wave transducer.

12. 12. The ultrasonic transducer according to claim 1, wherein the One graphite layer has an acoustic impedance of approximately 5.1 MRayleigh. Sudousa.

13. 13. The ultrasonic transducer according to claim 1, wherein the One graphite layer has a thickness of about 1.5 mm to about 1.6 mm. sa.

14. 14. The ultrasonic transducer according to claim 1, wherein the The tungsten layer has an acoustic impedance of about 100 MRayleigh. Consumer.

15. 15. The ultrasonic transducer according to claim 1, wherein the the tungsten layer has a thickness of about 2.6 mm to about 2.7 mm.

16. 16. The ultrasonic transducer according to claim 1, The two graphite layers have an acoustic impedance of approximately 5.1 MRayleigh. Sudousa.

17. 17. The ultrasonic transducer according to claim 1, wherein the The graphite layer has a thickness of about 1.5 mm to about 1.6 mm. sa.

18. 18. The ultrasonic transducer according to claim 1, wherein the copper The layer has an acoustic impedance of about 41.5 MRayleigh.

19. 19. The ultrasonic transducer according to claim 1, wherein the copper The layer has a thickness of about 2.5 mm to about 2.6 mm.

20. 20. The ultrasonic transducer according to claim 1, wherein the pressure The piezoelectric material is a composite piezoelectric disc that is polarized, making it an ultrasonic transducer.

21. 21. The ultrasonic transducer of claim 20, wherein the polarized composite piezoelectric disc K is an ultrasonic transducer with a 1_3 configuration.

22. 20. The ultrasonic transducer according to claim 1, wherein the pressure The piezoelectric material is PZT4, and the piezoelectric material is 10 mm thick, separated by 200 μm kerfs. The kerfs were cut at a pitch of approximately 1200 μm. Ultrasonic transducer.

23. 23. The ultrasonic transducer of claim 22, wherein the piezoelectric material is about 2.35 mm An ultrasonic transducer having a thickness of about 2.45 mm.

24. 24. The ultrasonic transducer of claim 22 or 23, wherein the kerfs are composite filled. The composite filler is filled with hafnium dioxide particles doped in epoxy. Included are ultrasonic transducers.

25. 25. The ultrasonic transducer of claim 24, wherein the composite filler is in a 0_3 configuration. An ultrasonic transducer.

26. 26. The ultrasonic transducer according to claim 24 or 25, wherein the epoxy is Epo - Tek® 301 ultrasonic transducer.

27. 20. The ultrasonic transducer according to claim 1, wherein the pressure The piezoelectric material is composed of a piezoelectric layer, an ultrasonic transducer.

28. The ultrasonic transducer according to any one of claims 1 to 27, further comprising: and a thermally conductive structure in contact with the backing structure.

29. 29. The ultrasonic transducer of claim 28, wherein the thermally conductive structure is an ultrasonic transducer electrically isolated from the bearing structure.

30. 30. The ultrasonic transducer according to claim 28 or 29, wherein the heat conducting structure is A An ultrasonic transducer, which is a layer made of IN or a layer made of beryllium oxide.

31. The ultrasonic transducer according to any one of claims 28 to 30, The thermally conductive structure extends over the lateral portions of the backing structure. Consumer.

32. The ultrasonic transducer according to any one of claims 28 to 31, the thermally conductive structure having at least one electrically conductive via extending therethrough; Ultrasonic transducer.

33. The ultrasonic transducer according to any one of claims 1 to 32, further comprising: , at least one of the piezoelectric material, the backing structure, and the one or more electrodes. a control unit electrically connected to the ultrasonic transducer;

34. 34. The ultrasonic transducer according to claim 1, wherein the first one or more electrodes electrically connected to the piezoelectric material through the backing structure. Sonic transducer.

35. The ultrasonic transducer according to any one of claims 1 to 34, further comprising: An ultrasonic transducer comprising a wear layer having wear resistance.

36. 36. The ultrasonic transducer of claim 35, wherein the wear layer is made of titanium. Ultrasonic transducer.

37. 37. The ultrasonic transducer according to claim 1, wherein the ultrasonic The sonic transducer has a diameter of about 50 mm.

38. 38. The ultrasonic transducer according to claim 1, wherein the the blocking structure is further configured to reflect the acoustic energy in phase. Ultrasonic transducer.

39. 39. The ultrasonic transducer according to claim 1, wherein the The backing structure further reduces unwanted acoustic reflections within the backing structure in a spatially-dependent manner. and dispersing the ultrasonic wave in time.

40. In an ultrasonic transducer, a piezoelectric material having a front surface and a back surface, the piezoelectric material being configured to be in acoustic communication with the sample; and, a piezoelectric material disposed on the rear surface thereof and directing acoustic energy toward the front surface thereof; a backing structure configured to reflect light, A first two-layered non-magnetic material comprising a first low acoustic impedance layer and a first high acoustic impedance layer. a conformal backing material; and a second low acoustic impedance layer and a second low acoustic impedance layer connected to the first two-layer matching backing material; a second two-layer mismatched backing material comprising a high acoustic impedance layer; the backing structure comprising: An ultrasonic transducer comprising:

41. 41. The ultrasonic transducer of claim 40, further comprising: the backing structure. a heat sink in thermal contact with the piezoelectric material or a thermally conductive layer that acoustically matches the piezoelectric material; and an ultrasonic transducer.

42. 42. The ultrasonic transducer according to claim 40 or 41, further comprising: an ultrasonic transducer comprising one or more electrodes in electrical communication with the

43. The ultrasonic transducer according to any one of claims 40 to 42, An ultrasonic transducer, wherein the backing structure is thermally and electrically conductive.

44. The ultrasonic transducer according to any one of claims 40 to 43, further comprising: a pre-assembled electrical circuit, the pre-assembled electrical circuit being electrically connected to the top of the backing structure; an ultrasonic transducer that is electrically conductive with the piezoelectric material and is thereby in electrical communication with the piezoelectric material.

45. 45. The ultrasonic transducer of claim 44, wherein the pre-assembled electrical circuit is a printed circuit board. at least one of a printed circuit board, an interposer, an integrated circuit, and an application specific integrated circuit an ultrasonic transducer having one

46. 42. The ultrasonic transducer of claim 41, wherein the heat sink comprises at least a channel for receiving and circulating a heat transfer fluid therein; an ultrasonic transducer configured to

47. 47. The ultrasonic transducer of claim 46, wherein the heat transfer fluid is a liquid. Ultrasonic transducer.

48. 48. The ultrasonic transducer according to claim 46 or 47, wherein the heat sink is An ultrasonic transducer electrically isolated from the backing structure.

49. The ultrasonic transducer according to any one of claims 40 to 48, The ultrasonic transducer is operable at an operating frequency related to an operating wavelength (λo); Also The first low acoustic impedance layer, the first high acoustic impedance layer, the second low acoustic impedance layer The impedance layer and the second high acoustic impedance layer each have a thickness of approximately λo / 4. or an ultrasonic transducer having a thickness corresponding to an odd multiple of λo / 4.

50. 50. The ultrasonic transducer of claim 49, wherein the piezoelectric material is an ultrasonic transducer configured to resonate at a half wavelength at a frequency of 1 / 2 GHz;

51. 50. The ultrasonic transducer of claim 49, further comprising: a piezoelectric material and a barrier. a single mismatching layer disposed between the piezoelectric element and the piezoelectric support structure, the single mismatch layer is in acoustic communication with the piezoelectric material and the backing structure; having a corresponding acoustic impedance relatively higher than the acoustic impedance of the material, the piezoelectric material is configured to resonate at a quarter wavelength at the operating frequency; Duesa.

52. 52. The ultrasonic transducer of claim 51, wherein the piezoelectric material has a resonant frequency. The resonant frequency is related to a resonant wavelength λr, and the single mismatched layer is An ultrasonic transducer having a thickness of less than 2λr / 5 relative to frequency.

53. 53. The ultrasonic transducer of claim 52, wherein the single mismatched layer has a frequency of about λr / 1. An ultrasonic transducer having a thickness of 0 to about λr / 20.

54. The ultrasonic transducer according to any one of claims 51 to 53, The single mismatched layer is made of tungsten.

55. The ultrasonic transducer according to any one of claims 40 to 54, The piezoelectric material is an ultra-thin film with acoustic properties having an acoustic impedance of approximately 27.5 MRayleigh. Sonic transducer.

56. The ultrasonic transducer according to any one of claims 40 to 55, The piezoelectric material is a composite piezoelectric disc that is polarized to form an ultrasonic transducer.

57. 57. The ultrasonic transducer of claim 56, wherein the polarized composite piezoelectric disc The ultrasonic transducer has a thickness of about 2.4 mm.

58. 58. The ultrasonic transducer according to claim 56 or 57, wherein the polarized composite piezoelectric device The SC is an ultrasonic transducer with a 1_3 configuration.

59. The ultrasonic transducer according to any one of claims 40 to 55, The piezoelectric material is a composite of PZT4, and the piezoelectric materials are separated by kerfs of 200 μm. The kerfs have 1000 μm×1000 μm pillars with a pitch of about 1200 μm. An ultrasonic transducer is cut off by a cutter.

60. 60. The ultrasonic transducer of claim 59, wherein the kerfs are filled with a composite filler material. The composite filler is an ultra-fine filler comprising hafnium dioxide particles doped in epoxy. Sonic transducer.

61. 61. The ultrasonic transducer of claim 60, wherein the composite filler is in a 0_3 configuration. An ultrasonic transducer.

62. 62. The ultrasonic transducer of claim 60 or 61, wherein the epoxy is Epo - Tek® 301 ultrasonic transducer.

63. The ultrasonic transducer according to any one of claims 40 to 55, Piezoelectric materials are composed of piezoelectric layers, ultrasonic transducers.

64. The ultrasonic transducer according to any one of claims 40 to 63, further comprising: and a thermally conductive structure in contact with the backing structure.

65. 65. The ultrasonic transducer of claim 64, wherein the thermally conductive structure is an ultrasonic transducer electrically isolated from the bearing structure.

66. 66. The ultrasonic transducer according to claim 64 or 65, wherein the thermally conductive structure comprises: An ultrasonic transducer, which is an AlN layer or a beryllium oxide layer.

67. 67. The ultrasonic transducer according to claim 64, wherein The thermally conductive structure extends over the lateral portions of the backing structure. -sa.

68. The ultrasonic transducer according to any one of claims 64 to 67, the thermally conductive structure having at least one electrically conductive via extending therethrough; Ultrasonic transducer.

69. The ultrasonic transducer according to any one of claims 40 to 68, further comprising: and electrically connected to at least one of the piezoelectric material and the backing structure. An ultrasonic transducer comprising a control unit.

70. 43. The ultrasonic transducer of claim 42, wherein the one or more electrodes are an ultrasonic transducer electrically connected to the piezoelectric material via a coupling structure;

71. The ultrasonic transducer according to any one of claims 40 to 70, further comprising: and an ultrasonic transducer having a wear layer having wear resistance.

72. 72. The ultrasonic transducer of claim 71, wherein the wear layer is made of titanium. Ultrasonic transducer.

73. The ultrasonic transducer according to any one of claims 40 to 72, The ultrasonic transducer has a diameter of about 50 mm.

74. The ultrasonic transducer according to any one of claims 40 to 73, the backing structure is further configured to reflect said acoustic energy in phase. Ultrasonic transducer.

75. The ultrasonic transducer according to any one of claims 40 to 74, The backing structure reduces unwanted acoustic reflections within the backing structure spatially and temporally. The ultrasonic transducer is further configured to distribute the ultrasonic waves evenly.

76. an ultrasonic transducer having a sample contact portion and a back portion opposite the sample contact portion; A inducer, a piezoelectric material configured to be in acoustic communication with the sample; and a backing structure in acoustic communication with the piezoelectric material, said backing structure transmitting acoustic energy to said piezoelectric material; the ultrasonic transducer in a direction toward the sample contact and away from the back of the ultrasonic transducer. It is configured to fire a low acoustic impedance layer, and High acoustic impedance layer, the backing structure comprising: An ultrasonic transducer comprising:

77. 77. The ultrasonic transducer of claim 76, wherein the low acoustic impedance layer and and the high acoustic impedance layer forms a first two-layer mismatched backing material, The lancer further comprises a second two-layered mismatched backing material, the second two-layered mismatched backing material being The composite backing material has a second low acoustic impedance layer and a second high acoustic impedance layer. Ultrasonic transducer.

78. 78. The ultrasonic transducer according to claim 76 or 77, further comprising: an ultrasonic transducer comprising a heat sink in thermal contact with the coupling structure;

79. The ultrasonic transducer according to any one of claims 76 to 78, further comprising: an ultrasonic transducer, comprising one or more electrodes in electrical communication with the piezoelectric material; 。

80. The ultrasonic transducer according to any one of claims 76 to 79, An ultrasonic transducer, wherein the backing structure is thermally and electrically conductive.

81. The ultrasonic transducer according to any one of claims 76 to 80, further comprising: a pre-assembled electrical circuit, the pre-assembled electrical circuit being electrically connected to the top of the backing structure; an ultrasonic transducer that is electrically conductive with the piezoelectric material and is thereby in electrical communication with the piezoelectric material.

82. 82. The ultrasonic transducer of claim 81, wherein the pre-assembled electrical circuit is a printed circuit board. at least one of a printed circuit board, an interposer, an integrated circuit, and an application specific integrated circuit an ultrasonic transducer having one

83. 79. The ultrasonic transducer of claim 78, wherein the heat sink comprises at least a channel for receiving and circulating a heat transfer fluid therein; an ultrasonic transducer configured to

84. 84. The ultrasonic transducer of claim 83, wherein the heat transfer fluid is a liquid. Ultrasonic transducer.

85. 85. The ultrasonic transducer of claim 83 or 84, wherein the heat sink is An ultrasonic transducer electrically isolated from the backing structure.

86. 78. The ultrasonic transducer of claim 77, wherein the ultrasonic transducer comprises: , operable at an operating frequency related to an operating wavelength (λo); and The low acoustic impedance layer, the high acoustic impedance layer, the second low acoustic impedance layer The second high acoustic impedance layer and the second high acoustic impedance layer are each approximately λo / 4 or λo An ultrasonic transducer having a thickness corresponding to an odd multiple of / 4.

87. 87. The ultrasonic transducer of claim 86, wherein the piezoelectric material is an ultrasonic transducer configured to resonate at a half wavelength at a frequency of 1 / 2 GHz;

88. 87. The ultrasonic transducer of claim 86, further comprising: a piezoelectric material and a barrier. a single mismatching layer disposed between the piezoelectric element and the piezoelectric support structure, the single mismatch layer is in acoustic communication with the piezoelectric material and the backing structure; having a corresponding acoustic impedance relatively higher than the acoustic impedance of the material, the piezoelectric material is configured to resonate at a quarter wavelength at the operating frequency; Duesa.

89. 89. The ultrasonic transducer of claim 88, wherein the piezoelectric material has a resonant frequency. The resonant frequency is related to a resonant wavelength λr, and the single mismatched layer is An ultrasonic transducer having a thickness of less than 2λr / 5 relative to frequency.

90. 90. The ultrasonic transducer of claim 89, wherein the single mismatched layer has a frequency of about λr / 1. An ultrasonic transducer having a thickness of 0 to about λr / 20.

91. The ultrasonic transducer according to any one of claims 88 to 90, The single mismatched layer is made of tungsten.

92. The ultrasonic transducer according to any one of claims 76 to 91, The piezoelectric material is an ultra-thin film with acoustic properties having an acoustic impedance of approximately 27.5 MRayleigh. Sonic transducer.

93. The ultrasonic transducer according to any one of claims 76 to 92, The piezoelectric material is a composite piezoelectric disc that is polarized to form an ultrasonic transducer.

94. 94. The ultrasonic transducer of claim 93, wherein the polarized composite piezoelectric disc The ultrasonic transducer has a thickness of about 2.4 mm.

95. 94. The ultrasonic transducer of claim 92 or 93, wherein the polarized compound pressure The electric disc is a 1_3 configuration, ultrasonic transducer.

96. The ultrasonic transducer according to any one of claims 76 to 92, The piezoelectric material is a composite of PZT4, and the piezoelectric materials are separated by kerfs of 200 μm. The kerfs have 1000 μm×1000 μm pillars with a pitch of about 1200 μm. An ultrasonic transducer is cut off by a cutter.

97. 97. The ultrasonic transducer of claim 96, wherein the kerfs are filled with a composite filler material. The composite filler is an ultra-fine filler comprising hafnium dioxide particles doped in epoxy. Sonic transducer.

98. 98. The ultrasonic transducer of claim 97, wherein the composite filler is in a 0_3 configuration. An ultrasonic transducer.

99. 98. The ultrasonic transducer of claim 96 or 97, wherein the epoxy is Epo -Tek® 301 ultrasonic transducer.

100. The ultrasonic transducer according to any one of claims 76 to 92, Piezoelectric materials are composed of piezoelectric layers, ultrasonic transducers.

101. The ultrasonic transducer according to any one of claims 76 to 100, further comprising: and a thermally conductive structure in contact with the backing structure. 。

102. 102. The ultrasonic transducer of claim 101, wherein the thermally conductive structure is an ultrasonic transducer electrically isolated from the king structure;

103. 102. The ultrasonic transducer according to claim 100 or 101, wherein the thermally conductive structure is an ultrasonic transducer, which is a layer made of AlN or a layer made of beryllium oxide.

104. The ultrasonic transducer according to any one of claims 101 to 103, The thermally conductive structure extends over a lateral portion of the backing structure. Sudousa.

105. The ultrasonic transducer according to any one of claims 101 to 104, The thermally conductive structure has at least one electrically conductive via extending therethrough. Ultrasonic transducer.

106. The ultrasonic transducer according to any one of claims 76 to 105, further comprising: and a piezoelectric element electrically connected to at least one of the piezoelectric material and the backing structure.

1. An ultrasonic transducer comprising a control unit for detecting a frequency of an ultrasonic wave.

107. 80. The ultrasonic transducer of claim 79, wherein the one or more electrodes are an ultrasonic transducer electrically connected to the piezoelectric material via a coupling structure;

108. The ultrasonic transducer according to any one of claims 79 to 107, further comprising: The ultrasonic transducer further comprises a wear layer having wear resistance.

109. 109. The ultrasonic transducer of claim 108, wherein the wear layer is made of titanium. , ultrasonic transducer.

110. The ultrasonic transducer according to any one of claims 76 to 109, The ultrasonic transducer has a diameter of about 50 mm.

111. The ultrasonic transducer according to any one of claims 76 to 110, The backing structure is further configured to reflect the acoustic energy in phase. , ultrasonic transducer.

112. The ultrasonic transducer according to any one of claims 76 to 111, The backing structure reduces unwanted acoustic reflections within the backing structure spatially and spatially. The ultrasound transducer is further configured to distribute in time.

113. The ultrasonic transducer according to any one of claims 77 to 112, The piezoelectric material is diced into a plurality of piezoelectric regions separated from each other by gaps. the gap is electrically insulating and acoustically insulating; At least one of the low acoustic impedance layer and the high acoustic impedance layer , diced into a plurality of first elements separated from one another by a first set of gaps. and each of the gaps in the first set is a gap separating the piezoelectric regions. the gaps in the first set are electrically insulating and acoustically It is sound insulating, At least one of the second low acoustic impedance layer and the second high acoustic impedance layer The other is diced into a plurality of second elements, each separated by a second set of gaps. the gaps in the second set are separated by gaps that separate the piezoelectric regions. the gaps in the second set are aligned with corresponding gaps in the caps, and the gaps in the second set are electrically insulating. and acoustically insulating ultrasonic transducer.

114. 114. The ultrasonic transducer of claim 113, wherein the gap, the first set The gaps in the first set and the gaps in the second set are thermally conductive. Inducer.

115. In an ultrasonic transducer, a one-dimensional piezoelectric array having a front surface and a back surface, the array being configured to be in acoustic communication with the sample; the one-dimensional piezoelectric array including a plurality of piezoelectric regions arranged in a one-dimensional array; a piezoelectric transducer disposed on the rear surface of the one-dimensional piezoelectric array and adapted to transmit acoustic energy to the one-dimensional piezoelectric array; a backing structure configured to reflect the beam toward the front surface of the beam, the backing structure having low acoustic impedance; The backing material includes a two-layer mismatched backing material consisting of a high acoustic impedance layer and a high acoustic impedance layer. a packing structure; The one-dimensional piezoelectric array is electrically connected to the top of the backing structure. a pre-assembled electrical circuit that is electrically conductive; An ultrasonic transducer comprising:

116. 116. The ultrasonic transducer of claim 115, further comprising a second two-layer mismatched bridge. the second two-layer mismatched backing material includes a second low acoustic impedance layer and a second high acoustic impedance layer.

117. 117. The ultrasonic transducer according to claim 115 or 116, further comprising: an ultrasonic transducer having a heat sink in thermal contact with the king structure;

118. The ultrasonic transducer according to any one of claims 115 to 117, an ultrasound transducer, further comprising one or more electrodes in electrical communication with the one-dimensional piezoelectric array; Sudousa.

119. The ultrasonic transducer according to any one of claims 115 to 118, The ultrasonic transducer, wherein the backing structure is thermally and electrically conductive.

120. The ultrasonic transducer according to any one of claims 115 to 119, The pre-assembled electrical circuits include printed circuit boards, interposers, integrated circuits, and application-specific An ultrasonic transducer having at least one of the integrated circuits.

121. The ultrasonic transducer according to any one of claims 116 to 120, The piezoelectric regions are separated from one another by gaps, which are electrically insulating and acoustically insulating. An ultrasonic transducer that is insulating.

122. 122. The ultrasonic transducer of claim 121, wherein the low acoustic impedance layer At least one of the high acoustic impedance layers is die-cut to the plurality of first elements. and separated from each other by a first set of gaps, Each gap is aligned with a corresponding one of the gaps separating the piezoelectric regions. the gaps in the first set are electrically insulating and acoustically insulating. Lanceducer.

123. 123. The ultrasonic transducer according to claim 121 or 122, wherein the second low acoustic impedance At least one of the first high acoustic impedance layer and the second high acoustic impedance layer is diced into two elements separated from each other by a second set of gaps; Each gap in the second set is a corresponding one of the gaps separating the piezoelectric regions. the gaps in the second set are aligned with the gaps in the first set, the gaps in the second set being electrically insulating and acoustically insulating. An ultrasonic transducer.

124. 124. The ultrasonic transducer of claim 123, wherein the gap, the first set the gaps in the first set and the gaps in the second set are thermally conductive. Lanceducer.

125. The ultrasonic transducer according to any one of claims 115 to 124, The top of the backing structure is made of an electrically insulating material. 。

126. 126. The ultrasonic transducer of claim 125, wherein the electrically insulating material is thermally conductive. An ultrasonic transducer.

127. The ultrasonic transducer according to any one of claims 115 to 126, The top portion has a layer of AlN traversed by conductive vias, each of the conductive vias are aligned with corresponding piezoelectric regions among the plurality of piezoelectric regions arranged in a one-dimensional array. , ultrasonic transducer.

128. 128. The ultrasonic transducer of claim 127, wherein the AlN layer has a front surface. The AlN layer is partially diced from the front side and arranged in one dimension. an ultrasonic transducer for enhancing acoustic isolation between adjacent piezoelectric regions among the plurality of arranged piezoelectric regions; Lanceducer.

129. 118. The ultrasonic transducer of claim 117, wherein the heat sink comprises at least and a second channel configured to receive and circulate a heat transfer fluid therein. An ultrasonic transducer configured as follows.

130. 130. The ultrasonic transducer of claim 129, wherein the heat transfer fluid is a liquid. , ultrasonic transducer.

131. 131. The ultrasonic transducer of claim 129 or 130, wherein the heat sink is electrically isolated from the backing structure.

132. 117. The ultrasonic transducer of claim 116, The ultrasonic transducer is operable at an operating frequency related to an operating wavelength (λo). can be, The low acoustic impedance layer, the high acoustic impedance layer, the second low acoustic impedance layer The second high acoustic impedance layer and the second high acoustic impedance layer are each approximately λo / 4 or λo / An ultrasonic transducer having a thickness corresponding to an odd multiple of four.

133. 133. The ultrasonic transducer of claim 132, wherein the one-dimensional piezoelectric array An ultrasonic transducer configured to resonate at a half wavelength at the operating frequency.

134. 133. The ultrasonic transducer of claim 132, further comprising: a single mismatched layer disposed between the backing structure and the backing structure, the single mismatched layer comprising: , in acoustic communication with the one-dimensional piezoelectric array and the backing structure; and has a corresponding acoustic impedance that is relatively higher than the acoustic impedance of the one-dimensional piezoelectric array. The one-dimensional piezoelectric array has a quarter-wave resonance at the operating frequency. An ultrasonic transducer comprising:

135. 135. The ultrasound transducer of claim 134, wherein the one-dimensional piezoelectric array is resonant. The resonant frequency is related to a resonant wavelength λr, and the single mismatching layer An ultrasonic transducer having a thickness of less than 2λr / 5 relative to the resonant frequency of the piezoelectric array. -sa.

136. 136. The ultrasonic transducer of claim 135, wherein the single mismatched layer has a thickness of about λr / An ultrasonic transducer having a thickness of 10 to about λr / 20.

137. The ultrasonic transducer according to any one of claims 134 to 136, The single mismatching layer is made of tungsten.

138. The ultrasonic transducer according to any one of claims 115 to 137, The piezoelectric regions have posts separated by kerfs.

139. 139. The ultrasonic transducer of claim 138, wherein the kerfs are filled with a composite filler material. and the composite filler comprises particles of hafnium dioxide doped in an epoxy. Ultrasonic transducer.

140. 140. The ultrasonic transducer of claim 139, wherein the composite filler is in a 0_3 configuration. That is, an ultrasonic transducer.

141. 141. The ultrasonic transducer of claim 139 or 140, wherein the epoxy is E po-Tek® 301 ultrasonic transducer.

142. The ultrasonic transducer according to any one of claims 115 to 137, Each piezoelectric region is composed of a piezoelectric layer.

143. The ultrasonic transducer according to any one of claims 115 to 142, The ultrasonic transducer further comprises a thermally conductive structure in contact with the backing structure. sa.

144. 144. The ultrasonic transducer of claim 143, wherein the thermally conductive structure is an ultrasonic transducer electrically isolated from the king structure;

145. 145. An ultrasonic transducer according to claim 143 or 144, wherein the thermally conductive structure is an ultrasonic transducer, which is a layer made of AlN or a layer made of beryllium oxide.

146. The ultrasonic transducer according to any one of claims 143 to 145, The thermally conductive structure extends over a lateral portion of the backing structure. Duesa.

147. The ultrasonic transducer according to any one of claims 113 to 142, Further, at least one of the one-dimensional piezoelectric array and the backing structure is electrically an ultrasonic transducer, the ultrasonic transducer comprising a control unit connected to the ultrasonic transducer;

148. 148. The ultrasonic transducer of claim 147, wherein the one or more electrodes an ultrasonic transformer electrically connected to the one-dimensional piezoelectric array through a backing structure; Duesa.

149. The ultrasonic transducer according to any one of claims 115 to 148, The ultrasonic transducer further comprises a wear layer having wear resistance.

150. 150. The ultrasonic transducer of claim 149, wherein the wear layer is made of titanium. , ultrasonic transducer.

151. The ultrasonic transducer according to any one of claims 115 to 150, The ultrasonic transducer has a diameter of about 50 mm.

152. The ultrasonic transducer according to any one of claims 115 to 151, The backing structure is further configured to reflect the acoustic energy in phase. An ultrasonic transducer.

153. The ultrasonic transducer according to any one of claims 115 to 152, The backing structure may further comprise: An ultrasonic transducer configured to be spatially and temporally distributed.

154. In an ultrasonic transducer, a two-dimensional piezoelectric transducer having a front surface and a back surface and configured to be in acoustic communication with the sample; Trix and a piezoelectric transducer disposed on the rear surface of the one-dimensional piezoelectric matrix and adapted to transmit acoustic energy to the two-dimensional piezoelectric transducer; a backing structure configured to reflect toward a front surface of the piezoelectric matrix, Two-layer mismatched backing material consisting of a low acoustic impedance layer and a high acoustic impedance layer the backing structure comprising: The backing structure is electrically connected to the top of the backing structure, thereby forming a piezoelectric matrix. a pre-assembled electrical circuit in electrical communication with the An ultrasonic transducer comprising:

155. 155. The ultrasonic transducer of claim 154, further comprising a second two-layer mismatched bridge. the second two-layer mismatched backing material includes a second low acoustic impedance layer and a second high acoustic impedance layer.

156. 156. The ultrasonic transducer of claim 154 or 155, further comprising: an ultrasonic transducer having a heat sink in thermal contact with the king structure;

157. The ultrasonic transducer according to any one of claims 154 to 156, and an ultrasonic transducer further comprising one or more electrodes in electrical communication with the two-dimensional piezoelectric matrix. Wave transducer.

158. The ultrasonic transducer according to any one of claims 154 to 157, The ultrasonic transducer, wherein the backing structure is thermally and electrically conductive.

159. The ultrasonic transducer according to any one of claims 154 to 158, The pre-assembled electrical circuits include printed circuit boards, interposers, integrated circuits, and application specific electrical circuits. an ultrasonic transducer having at least one of a plurality of integrated circuits;

160. The ultrasonic transducer according to any one of claims 155 to 159, The two-dimensional piezoelectric matrix has a plurality of piezoelectric regions, each of which is separated from the others by a gap. the gap is electrically insulating and acoustically insulating. sa.

161. 161. The ultrasonic transducer of claim 160, wherein the low acoustic impedance layer At least one of the high acoustic impedance layers is die-cut to the plurality of first elements. and separated from each other by a first set of gaps, Each gap is aligned with a corresponding one of the gaps separating the piezoelectric regions. and the gaps in the first set are electrically insulating and acoustically insulating. Sudousa.

162. 162. The ultrasonic transducer of claim 160 or 161, wherein the second low acoustic impedance At least one of the first high acoustic impedance layer and the second high acoustic impedance layer is diced into two elements separated from each other by a second set of gaps; Each gap in the second set is a corresponding one of the gaps separating the piezoelectric regions. the gaps in the second set are aligned with the gaps in the first set, the gaps in the second set being electrically insulating and acoustically insulating. An ultrasonic transducer.

163. 163. The ultrasonic transducer of claim 162, wherein the gap, the first set The gaps in the first set and the gaps in the second set are thermally conductive. Inducer.

164. The ultrasonic transducer according to any one of claims 154 to 163, The top of the backing structure is made of an electrically insulating material. 。

165. 163. The ultrasonic transducer of claim 162, wherein the electrically insulating material is thermally conductive. An ultrasonic transducer.

166. The ultrasonic transducer according to any one of claims 160 to 164, The top has a layer of AlN traversed by conductive vias, each conductive via having: an ultrasonic transducer aligned with a corresponding one of the plurality of piezoelectric regions;

167. 167. The ultrasonic transducer of claim 166, wherein the AlN layer has a front surface. The AlN layer is partially diced from the front side and arranged in a one-dimensional array. an ultrasonic transducer for enhancing acoustic isolation between adjacent piezoelectric regions among the plurality of piezoelectric regions arranged in an array; Inducer.

168. 157. The ultrasonic transducer of claim 156, wherein the heat sink comprises at least a second channel configured to receive and circulate a heat transfer fluid within the channel; an ultrasonic transducer configured to circulate the ultrasonic wave.

169. 169. The ultrasonic transducer of claim 168, wherein the heat transfer fluid is a liquid. , ultrasonic transducer.

170. 170. The ultrasonic transducer of claim 168 or 169, wherein the heat sink is electrically isolated from the backing structure.

171. 156. The ultrasonic transducer of claim 155, The ultrasonic transducer is operable at an operating frequency related to an operating wavelength (λo). Yes, and The low acoustic impedance layer, the high acoustic impedance layer, the second low acoustic impedance layer The second high acoustic impedance layer and the second high acoustic impedance layer are each approximately λo / 4 or λo / An ultrasonic transducer having a thickness corresponding to an odd multiple of four.

172. 172. The ultrasonic transducer of claim 171, wherein the two-dimensional piezoelectric matrix an ultrasonic transducer configured to resonate at a half-wavelength at the operating frequency.

173. 172. The ultrasonic transducer of claim 171, further comprising: a single mismatch layer disposed between the backing structure and the backing structure; The composite layer is in acoustic communication with the two-dimensional piezoelectric matrix and the backing structure. The single mismatched layer has a relative acoustic impedance lower than that of the two-dimensional piezoelectric matrix. and the two-dimensional piezoelectric matrix has a high corresponding acoustic impedance at the operating circumference. An ultrasonic transducer configured to resonate at a quarter wavelength at a wave number.

174. 174. The ultrasonic transducer of claim 173, wherein the two-dimensional piezoelectric matrix has a resonant frequency, the resonant frequency is related to a resonant wavelength λr, and the single mismatching layer an ultrasonic transducer having a thickness of less than 2λr / 5 relative to the resonant frequency of the two-dimensional piezoelectric matrix; Transducer.

175. 175. The ultrasonic transducer of claim 174, wherein the single mismatched layer has a frequency of about λr / An ultrasonic transducer having a thickness of 10 to about λr / 20.

176. In the ultrasonic transducer according to any one of claims 173 to 175, The single mismatching layer is made of tungsten.

177. The ultrasonic transducer according to any one of claims 154 to 176, The two-dimensional piezoelectric matrix has posts separated by kerfs, Sudousa.

178. 178. The ultrasonic transducer of claim 177, wherein said kerfs are filled with a composite filler material. and the composite filler comprises particles of hafnium dioxide doped in an epoxy. Ultrasonic transducer.

179. 179. The ultrasonic transducer of claim 178, wherein the composite filler is in a 0_3 configuration. That is, an ultrasonic transducer.

180. 180. The ultrasonic transducer of claim 178 or 179, wherein the epoxy is E po-Tek® 301 ultrasonic transducer.

181. The ultrasonic transducer according to any one of claims 154 to 180, The two-dimensional piezoelectric matrix is ​​composed of piezoelectric layers.

182. In the ultrasonic transducer according to any one of claims 154 to 181, The ultrasonic transducer further comprises a thermally conductive structure in contact with the backing structure. sa.

183. 183. The ultrasonic transducer of claim 182, wherein the thermally conductive structure is an ultrasonic transducer electrically isolated from the king structure;

184. 184. An ultrasonic transducer according to claim 182 or 183, wherein the thermally conductive structure is an ultrasonic transducer, which is a layer made of AlN or a layer made of beryllium oxide.

185. The ultrasonic transducer according to any one of claims 182 to 184, The thermally conductive structure extends over a lateral portion of the backing structure. Sudousa.

186. The ultrasonic transducer according to any one of claims 154 to 185, Further, at least one of the two-dimensional piezoelectric matrix and the backing structure An ultrasonic transducer having a control unit electrically connected thereto.

187. 187. The ultrasonic transducer of claim 186, wherein the one or more electrodes an ultrasonic transducer electrically connected to the two-dimensional piezoelectric matrix via a backing structure; Transducer.

188. The ultrasonic transducer according to any one of claims 154 to 187, The ultrasonic transducer further comprises a wear layer having wear resistance.

189. 189. The ultrasonic transducer of claim 188, wherein the wear layer is made of titanium. , ultrasonic transducer.

190. In the ultrasonic transducer according to any one of claims 154 to 189, The ultrasonic transducer has a diameter of about 50 mm.

191. The ultrasonic transducer according to any one of claims 154 to 190, The backing structure is further configured to reflect the acoustic energy in phase. An ultrasonic transducer.

192. The ultrasonic transducer according to any one of claims 154 to 191, The backing structure reduces unwanted acoustic reflections within the backing structure spatially and spatially. and temporally dispersing the ultrasonic transducer.

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