Method of manufacturing light source module

Abstract

To provide a method of manufacturing a light source module including a light emitting device in which a position of a light emitting surface is realized with good reproducibility.SOLUTION: Preparing a temporary substrate including a base member, a wiring member disposed on the base member, and a plurality of alignment marks; mounting a plurality of semiconductor light-emitting elements on the wiring member; covering side surfaces of the plurality of semiconductor light-emitting elements and the plurality of alignment marks with a sealing member; exposing the plurality of alignment marks by removing the base member from the wiring member, the plurality of alignment marks, and the sealing member; A method for manufacturing a light source module, the method comprising: singulating a plurality of semiconductor light emitting elements into light emitting devices each including at least one of the plurality of semiconductor light emitting elements; mounting the light emitting devices on a printed circuit board; and disposing a lens on a side of the mounted light emitting devices opposite to the printed circuit board.SELECTED DRAWING: Figure 15

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a light source module. [Background technology]

[0002] 2. Description of the Related Art Light-emitting devices having semiconductor light-emitting elements are widely used in combination with optical elements such as lenses for a variety of purposes, such as light sources for backlights of liquid crystal displays and various types of illumination. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-10693 [Patent Document 2] Patent Publication No. 2021-139956 Summary of the Invention [Problem to be solved by the invention]

[0004] When a light-emitting device having a semiconductor light-emitting element is used in combination with a rotationally symmetric optical element such as a lens, if the position of the light-emitting surface of the light-emitting device varies in the direction of the axis (optical axis) of the optical element such as the lens, the size of the image formed by the optical element such as the lens will not be consistent on the image plane, or the image will be blurred. Furthermore, if the light-emitting surface of the light-emitting device is away from the optical axis of the optical element such as the lens, or if the normal to the flat light-emitting surface of the light-emitting device is tilted from the optical axis, the image formed by the optical element such as the lens will be away from the optical axis, or the image will be distorted or blurred, making it impossible to obtain a good image. Therefore, in a light source module, the relative positional accuracy between the light emitting surface of the light emitting device and optical elements such as lenses is important, and it is required to achieve the dimensions and position of the light emitting surface of the light emitting device with good reproducibility. [Means for solving the problem]

[0005] a first step of preparing a precursor substrate including a base material having a first surface, and a wiring member and a plurality of alignment marks disposed on the first surface; a second step of placing a plurality of semiconductor light emitting elements on the wiring member; a third step of covering side surfaces of the semiconductor elements and the alignment marks with a sealing member; a fourth step of removing the base material from the wiring member, the alignment marks, and the sealing member to expose the alignment marks; a fifth step of singulating the semiconductor light emitting device into individual light emitting devices, each including one or more semiconductor light emitting elements from the plurality of semiconductor light emitting elements, based on the exposed alignment marks; and a sixth step of mounting the light emitting device on a printed wiring board; and a seventh step of arranging a lens on the side of the one or more light emitting devices opposite to the printed wiring board side, thereby manufacturing a light source module. [Effects of the Invention]

[0006] By increasing the processing accuracy when removing the base material of the precursor substrate while leaving multiple alignment marks, the variation in the difference in height between the light emitting surface of multiple light emitting devices and the height of the alignment marks is reduced. Furthermore, by placing the semiconductor light emitting element based on the alignment marks and singulating the light emitting device based on the alignment marks, the relative position accuracy between the outer edge of the light emitting device and the semiconductor light emitting element is improved. In an xyz Cartesian coordinate system in which the optical axis of an optical element such as a lens coincides with the z-axis, reducing the variation in the difference between the height of the light-emitting surface of the light-emitting device and the height of the alignment mark in the manufacture of multiple light source modules reduces the variation in the distance in the z-axis direction between the light-emitting surface of the light-emitting device and an optical element such as a lens, thereby making the size of the image formed by the optical element such as a lens constant on the image plane and reducing image blur. Furthermore, mounting the semiconductor light-emitting element based on multiple alignment marks and singulating the semiconductor light-emitting element based on the alignment marks improves the relative positional accuracy between the light-emitting surface of the light-emitting device and an optical element such as a lens in terms of the distance in the x-axis direction, the distance in the y-axis direction, and the rotation angle around the z-axis, thereby improving the relative positional accuracy between the outer edge of the light-emitting device and the semiconductor light-emitting element. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view of a light source module according to a first embodiment; [Figure 2] II-II cross section of Figure 1 [Figure 3] FIG. 1 is a plan view of a precursor substrate in a first step of the first embodiment; [Figure 4] Side view of the precursor substrate of Figure 3 [Figure 5] FIG. 1 is a plan view of a precursor substrate on which a semiconductor element is mounted in a second step of the first embodiment; [Figure 6] A side view of the precursor substrate on which the semiconductor element of FIG. 5 is mounted. [Figure 7] FIG. 1 is a plan view of a precursor substrate on which a light-transmitting member according to a first embodiment is placed; [Figure 8] 8 is a side view of the precursor substrate on which the light-transmitting member of FIG. 7 is placed. [Figure 9] FIG. 10 is a plan view of the precursor substrate after shaping the side surface of the placed light-transmitting member in the first embodiment; [Figure 10] 10 is a side view of the precursor substrate after shaping the side surface of the light-transmitting member placed in FIG. [Figure 11] 1 is a cross-sectional view of a precursor substrate on which a semiconductor element on which a sealing member is disposed and a light-transmitting member are mounted in a third step of the first embodiment; [Figure 12] Plan view after cutting the sealing member [Figure 13] XIII-XIII cross section of Figure 12 [Figure 14] 1 is a cross-sectional view showing the LLO in the fourth step of the first embodiment; [Figure 15] 1 is a cross-sectional view of the first embodiment after CMP in a fourth step; [Figure 16] Backside view after forming metal film on the backside after CMP [Figure 17] Section XVII-XVII of Figure 17 [Figure 18] FIG. 10 is a bottom view of the light emitting device after being divided into individual pieces in the fifth step of the first embodiment. [Figure 19] Section XIX-XIX of Figure 18 [Figure 20] FIG. 10 is a plan view showing the light emitting device mounted on the printed wiring board in a sixth step of the first embodiment; [Figure 21] 10 is a cross-sectional view of a light source module according to a second embodiment; [Figure 22] FIG. 10 is a plan view of a first layer of a wiring member of a precursor substrate according to a third embodiment; [Figure 23] FIG. 10 is a plan view of a second layer of a wiring member of a precursor substrate according to a third embodiment; [Figure 24] FIG. 10 is a plan view of a third layer of a wiring member of a precursor substrate according to a third embodiment. [Figure 25] FIG. 10 is a plan view of a fourth layer of the wiring member of the precursor substrate according to the third embodiment. [Figure 26] XXVI-XXVI cross section of Figure 25 [Figure 27] 10 is a plan view of a light emitting device according to a third embodiment. [Figure 28] FIG. 10 is a plan view of a first layer of a wiring member of a precursor substrate according to a fourth embodiment; [Figure 29] FIG. 10 is a plan view of a second layer of a wiring member of a precursor substrate according to a fourth embodiment; [Figure 30] FIG. 10 is a plan view of a third layer of a wiring member of a precursor substrate according to a fourth embodiment; [Figure 31] FIG. 10 is a plan view of a fourth layer of a wiring member of a precursor substrate according to a fourth embodiment. [Figure 32] FIG. 10 is a plan view of a precursor substrate on which a plurality of semiconductor elements are mounted in a second step of the fourth embodiment; [Figure 33]10 is a plan view of a light emitting device according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] An embodiment of the invention will be described below. However, the light-emitting device and the method for manufacturing the light source module described below are intended to embody the technical concept of the present invention, and unless otherwise specified, the present invention is not limited to the following. Furthermore, the content described in one embodiment can also be applied to other embodiments and modifications. Furthermore, the size and positional relationship of components shown in the drawings may be exaggerated for clarity. Note that this disclosure will first describe the configuration of a light source module including a light-emitting device and a method for manufacturing the same. Thereafter, specific explanations will be provided with reference to the drawings as appropriate. A plan view is a view from directly above, and a plan view means a view seen from directly above on a plane.

[0009] One embodiment of the present invention is a method for manufacturing a light source module including a light emitting device, which is a combination of multiple steps for combining and processing a precursor substrate including wiring members and alignment marks, a semiconductor element, a sealing member, a translucent member, a printed wiring board, an optical element, an optical element support member, etc.

[0010] <Light-emitting device> The light emitting device includes one or more semiconductor light emitting elements, a portion of a wiring member having a semiconductor element mounting surface corresponding to the one or more semiconductor light emitting elements, and a sealing member. The light emitting device has a light emitting surface on its upper surface, connection terminals on its lower surface, and a cut surface of the sealing member on its side. The side of the light emitting device may include the cut surface of the wiring member.

[0011] <Precursor substrate> The precursor substrate has a plate-shaped base material, a wiring member, and a plurality of alignment marks. The wiring member and the plurality of alignment marks are disposed on one main surface (first surface) of the base material and are supported by the base material.

[0012] <Base material> The base material of the precursor substrate serves as a base when forming the wiring members and the alignment marks, and supports them after they are formed. The linear expansion coefficient of the base material is 4×10 -7 / ℃~3×10 -5 / °C. This makes it difficult for the precursor substrate to warp. The substrate is, for example, a plate made of a hard and brittle material such as a glass plate, a ceramic plate, a Si wafer, a GaAs wafer, a GaP wafer, an InP wafer, a GaN wafer, an AlN wafer, or a sapphire wafer with a GaN film.

[0013] <Wiring components> The wiring member has one or more metal wiring layers and is provided with a plurality of semiconductor element mounting surfaces on the side opposite to the substrate side with which the wiring member is in contact. The wiring member also has a plurality of connection terminal areas on the substrate side. The plurality of connection terminal areas of the wiring member and the plurality of semiconductor element mounting surfaces have a relative positional relationship determined by design. The wiring member is, for example, a plurality of wirings made of a single layer of metal, or a multilayer wiring made of a plurality of metal wiring layers and one or more insulating layers. The metal constituting the wiring may include Au, Pt, Rh, Ti, Al, Ni, Cr, etc. in addition to Cu. When the wiring member is a multilayer wiring, the upper surface of the wiring member includes the plurality of semiconductor element mounting surfaces and the upper surface of the uppermost layer of the insulating material, and the lower surface of the wiring member includes the plurality of connection terminal areas and the lower surface of the lowermost layer of the insulating material. The linear expansion coefficient is 0.04 to 3 × 10 -5 / °C. The insulator is, for example, a silicon oxide film, a silicon nitride film, or a metal oxide film such as a titanium oxide film or a hafnium oxide film. The difference in linear expansion coefficient between the insulator and the metal wiring layer is small, making it difficult for the wiring member to warp.

[0014] <Connection terminal> The connection terminals are arranged on the surface (underside) of the wiring member facing the substrate and are used to connect the printed wiring board of the light source module to the light emitting device. The connection terminals are formed, for example, from part of the metal wiring layer, a metal film formed on the surface of the metal wiring layer, etc.

[0015] <Alignment mark> A plurality of alignment marks are arranged on the first surface of the substrate. The alignment marks may be convex or concave in cross-sectional view. The outer shape of the alignment marks in plan view may be, for example, but is not limited to, a square, a circle, a rectangle, an ellipse, a diamond, or a cross. When the alignment marks are convex in cross-sectional view, the outer shape of the alignment marks in plan view is the shape of the outer edge. When the alignment marks are concave in cross-sectional view, the outer shape of the alignment marks in plan view is the shape of the inner edge. The material of the alignment marks is, for example, the same material as that of the metal wiring layer.

[0016] The alignment marks and the semiconductor element mounting surface have a predetermined positional relationship, and when the semiconductor element is mounted, the alignment marks serve as marks that serve as references for positioning the semiconductor element, and the semiconductor element is mounted.

[0017] When a surface mounter is used to mount multiple semiconductor elements on multiple semiconductor element mounting surfaces of a wiring member, a recognition camera recognizes the shape of the outer edge of the semiconductor element in a planar view, a component suction head picks up the semiconductor element, and the recognition camera of the surface mounter recognizes multiple alignment marks to measure their positions, and uses the position information of the multiple alignment marks to control the movement of the component suction head to the mounting position. The predetermined positional relationship between the multiple alignment marks and the semiconductor element mounting surface refers to a relationship in which a control unit built into the surface mounter can calculate the position of the semiconductor element mounting surface from the positions of the multiple alignment marks. It is sufficient that at least one alignment mark is located at each of the four corners of a rectangular area on the first surface of the substrate that includes all of the multiple semiconductor element mounting surfaces of the wiring member. For example, the positional relationship can be such that the center of gravity of the semiconductor element mounting surface in a planar view coincides with the midpoint of a line segment connecting the centers of gravity of two adjacent alignment marks.

[0018] The plurality of connection terminal areas of the wiring member and the plurality of semiconductor element mounting surfaces have a predetermined relative positional relationship, and therefore the plurality of alignment marks and the plurality of connection terminal areas of the wiring member have a predetermined positional relationship.

[0019] Furthermore, the cutting lines and the alignment marks when singulating the light emitting devices have a predetermined positional relationship, and the alignment marks serve as guides for cutting when singulating the light emitting devices, and the light emitting devices are cut out. For example, the positional relationship can be such that the cutting line is the axis of symmetry of a rectangle whose vertex is the center of gravity of four adjacent alignment marks in a plan view. Furthermore, by having a predetermined positional relationship between the multiple alignment marks and the multiple connection terminal areas of the wiring member, high precision can be achieved in the positional relationship between the outer edge of the individualized light emitting device and the connection terminal areas when viewed in a plane.

[0020] <Semiconductor element> Semiconductor elements, also known as semiconductor chips, are components of electronic circuits made from semiconductor materials with electrical properties intermediate between those of conductors and insulators. Semiconductor elements include active elements such as diodes and transistors, passive elements such as resistors and capacitors, and integrated circuits (ICs) that integrate active and passive elements.

[0021] <Semiconductor light-emitting element> A light emitting device has one or more semiconductor light emitting elements. The semiconductor light emitting element is a semiconductor element that emits light by itself when a current is passed through it. For example, a known semiconductor element made of a III-V compound semiconductor or the like can be used as the semiconductor light emitting element. The semiconductor light emitting element has a light extraction surface and a device electrode surface on the surface opposite the light extraction surface, and has a side surface between the light extraction surface and the device electrode surface. The semiconductor light emitting element has a semiconductor laminate and at least a pair of device electrodes provided on the semiconductor laminate. The semiconductor light-emitting element is, for example, a light-emitting diode chip having a light extraction surface on the upper surface and a pair of positive and negative device electrodes on the lower surface as device electrode surfaces, and capable of flip-chip mounting. The light-emitting diode chip includes a semiconductor laminate including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer located between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. It may also include a device substrate for laminating the semiconductor laminate, but may not include a device substrate. The device electrodes of the light-emitting diode chip may be composed of gold, silver, copper, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or alloys thereof. The semiconductor laminate of the light-emitting diode chip may be composed of, for example, crystals of an InAlGaAs-based semiconductor, an InAlGaP-based semiconductor, zinc sulfide, zinc selenide, or an InAlGaN-based semiconductor. The light-emitting diode chip may be, for example, a blue light-emitting diode chip capable of emitting blue light, a green light-emitting diode chip capable of emitting green light, or a red light-emitting diode chip capable of emitting red light.

[0022] <Conductive bonding materials> As the material for the conductive bonding member, known materials such as tin-bismuth, tin-copper, tin-silver, tin-silver-copper, and gold-tin solders, and conductive adhesives such as silver paste can be used. For electrical bonding, conductive bonding materials can be used, as well as bonding methods such as diffusion bonding and surface activated bonding. Au bumps can also be provided and ultrasonic bonding can be used.

[0023] <Sealing member> The encapsulant protects the semiconductor element from contamination by organic or inorganic substances from the external environment, mechanical stress, vibration, shock, and electromagnetic waves. It also contributes to heat dissipation from the semiconductor element and facilitates handling during assembly. Examples of encapsulant materials include opaque resins and ceramics. An example of an opaque resin is a black resin made by mixing carbon powder with a translucent resin. White resins, which have both opaque and reflective properties, can also be used as encapsulant materials. White resins are translucent resins mixed with one or more particulate fillers to impart light reflectivity. The filler is, for example, titanium oxide (TiO2) particles, a white pigment, and the translucent resin is, for example, a thermosetting resin such as silicone resin or epoxy resin.

[0024] <Translucent member> The light-transmitting member is optically connected to the light extraction surface of the semiconductor light-emitting element, and the surface exposed from the sealing member becomes the light-emitting surface of the light-emitting device. In other words, light emitted from the semiconductor light-emitting element passes through the light-transmitting member and exits the light-emitting device. The light-transmitting member, combined with the sealing member, protects the semiconductor light-emitting element from contamination by organic or inorganic substances from the external environment, mechanical stress, vibration, impact, etc. Examples of materials that can be used for the light-transmitting member include silicone resin, epoxy resin, phenolic resin, polycarbonate resin, acrylic resin, or modified resins thereof, or glass or crystal, or a combination of these. The element substrate of the semiconductor light-emitting element may also serve as the light-transmitting member.

[0025] The light-transmitting member may contain wavelength-converting particles and / or light-diffusing particles, or may be a combination of a member containing wavelength-converting particles and / or light-diffusing particles and a member not containing wavelength-converting particles and / or light-diffusing particles. Known wavelength-converting particles and / or light-diffusing particles can be used. Wavelength conversion particles are materials that absorb at least a portion of the primary light emitted by a light-emitting element and emit secondary light with a wavelength different from the primary light. By incorporating wavelength conversion particles into a translucent material, it is possible to output mixed-color light, which is a mixture of the primary light emitted by the light-emitting element and the secondary light emitted by the wavelength conversion particles. For example, by using a blue light-emitting diode chip as the light-emitting element and phosphor particles such as Ce-doped yttrium aluminum garnet crystal particles (YAG phosphor particles) as the wavelength conversion particles, a light-emitting device can be constructed that outputs white light by mixing the blue light from the blue light-emitting diode chip and the yellow light emitted by the phosphor particles when excited by the blue light. Alternatively, a light-emitting device that outputs white light can be constructed by using a blue light-emitting diode chip as the light-emitting element and β-sialon-based phosphor particles as green phosphor particles and manganese-activated fluoride-based phosphor particles as red phosphor particles. Examples of translucent materials containing wavelength conversion particles include phosphor sheets in which YAG phosphor particles are dispersed inside a silicone resin sheet, plates (YAG plates) made by mixing and sintering YAG phosphor particles and alumina crystal particles, Ce-doped YAG single crystals, and Ce-doped YAG / sapphire eutectic crystals.

[0026] <Printed wiring board> Printed wiring boards (PCBs) are used to electrically connect one or more light-emitting devices to other electronic components and to mechanically position and secure components such as optical elements and optical element supports. They contain conductive metal wiring on or within a plate-shaped insulator, with solder resist or printing applied to the surface as needed. Examples of suitable insulators include glass fiber-reinforced epoxy laminates (e.g., glass epoxy, FR-4), bismaleimide-triazine resin (BT resin), and ceramics such as alumina, aluminum nitride, and beryllium oxide. Metal-based substrates, consisting of an aluminum or copper plate with an insulating layer on one side, and metal-core substrates, consisting of an aluminum or copper plate with an insulating layer on both sides, are also used to enhance heat dissipation.

[0027] <Optical elements> Examples of rotationally symmetric optical elements include convex lenses, concave lenses, meniscus lenses, Fresnel lenses, TIR (Total Internal Reflection) lenses, and combinations of these lenses, as well as parabolic mirrors and convex mirrors. The axis of rotational symmetry of a rotationally symmetric optical element is called the optical axis. Lenses are made of optical glass or optical plastics such as acrylic resin. Mirrors are made of metal, glass, or metal-plated films (e.g., silver-plated films, aluminum-plated films) formed on the surface of molded resin products.

[0028] <Optical element support member> The optical element supports are used to stabilize and maintain the position of the optical element. The optical element support member may be, for example, a lens holder when the optical element is a lens, or a molded product made of metal, glass, or resin when the optical element is a mirror.

[0029] A method for manufacturing a light source module including a light emitting device includes at least the following steps. (1) A first step of preparing a precursor substrate including a base material having a first surface, and a wiring member and a plurality of alignment marks disposed on the first surface. (2) A second step of placing a plurality of semiconductor light emitting elements on the wiring member. (3) A third step of covering the side surfaces of the semiconductor elements and the alignment marks with a sealing member. (4) A fourth step of removing the base material from the wiring member, the alignment marks, and the sealing member to expose the alignment marks. (5) A fifth step of singulating the semiconductor substrate into individual light emitting devices, each including one or more semiconductor light emitting elements from the plurality of semiconductor light emitting elements, based on the exposed alignment marks. (6) A sixth step of mounting the light emitting device on the printed wiring board. (7) A seventh step of arranging an optical element such as a lens on the side of the light emitting device opposite to the printed wiring board side. Each step will be described below.

[0030] (first step) The first step is to prepare a precursor substrate having a wiring member and a plurality of alignment marks on one main surface (first surface) of a plate-shaped base material. A precursor substrate is produced or procured in which the plurality of alignment marks and the plurality of semiconductor element mounting surfaces of the wiring member have a predetermined positional relationship, and at the same time, the plurality of alignment marks and the plurality of connection terminal areas of the wiring member have a predetermined positional relationship, thereby realizing a high degree of precision in the positional relationship between the plurality of alignment marks and the plurality of semiconductor element mounting surfaces and the plurality of connection terminal areas of the wiring member.

[0031] (Second process) The second step is a step of placing a plurality of semiconductor light-emitting elements on a plurality of semiconductor element mounting surfaces of a wiring member that are in a predetermined positional relationship with the plurality of alignment marks, using the plurality of alignment marks as references for positioning the semiconductor elements. A recognition camera of the surface mounter recognizes the plurality of alignment marks and measures their positions, captures the shape of the outer edge of the semiconductor elements in a planar view, a component suction head picks up the semiconductor elements, and controls the movement of the component suction head to the mounting position using position information from the plurality of alignment marks, and places the semiconductor elements on the semiconductor element mounting surfaces. The difference in height between the light extraction surface of the semiconductor light emitting element and the top surface of the wiring member from the first surface of the substrate, or the difference in height between the light extraction surface of the semiconductor light emitting element and the multiple alignment marks, is determined in the second step.

[0032] A step of placing a light-transmitting member on the light extraction surface of the semiconductor light-emitting element may be carried out between the second step and the third step. A plurality of light-transmitting members may be placed on each of the semiconductor light-emitting elements, or one large-sized light-transmitting member that covers all of the semiconductor light-emitting elements may be placed on all of the semiconductor light-emitting elements. Furthermore, a step of cutting the side surface of the light-transmitting member may be performed between the step of placing the light-transmitting member on the light extraction surface of the semiconductor light-emitting element and the third step. If a large-sized light-transmitting member is used in this step, the large-sized light-transmitting member is also cut. The side surface of the placed light-transmitting member is cut into the desired shape by processing using a dicing blade so that the outer edge of the upper surface of the light-transmitting member is inside the outer edge of the upper surface of the semiconductor light-emitting element in a plan view. For example, a flange portion is formed on the lower side surface of the light-transmitting member. A two-stage cutting process is performed using a dicing machine with two spindle shafts, using a dicing blade with a large blade thickness and a dicing blade with a small blade thickness, first forming the upper surface of the flange portion with the large blade thickness, and then cutting down to the lower surface of the light-transmitting member with the small blade thickness. In this case, multiple alignment marks are used as reference points for positioning when cutting the side surface of the light-transmitting member, achieving high precision in the horizontal position (within the xy plane), shape, and dimensions of the top surface of the light-transmitting member, which becomes the light-emitting surface of the light-emitting device.

[0033] (Third step) The third step is to arrange a sealing member so as to contact and cover the alignment marks arranged on the first surface of the substrate and the side surfaces of the semiconductor light emitting elements mounted on the wiring member. For example, the sealing member can be arranged using a molding technique using a mold, such as potting or injection molding. The sealing member may cover the entire surface (top surface) of the wiring member opposite the substrate side, or may cover only a portion of the top surface of the wiring member, but it should at least cover the top surface of the wiring member near the semiconductor light emitting elements on the semiconductor element mounting surface.

[0034] Between the third and fifth steps, a step of cutting the top surfaces of the sealing member and the translucent member may be performed. For example, grinding or blasting may be used. This is to ensure that the top surface of the translucent member, which will serve as the light-emitting surface of the light-emitting device, is exposed. Furthermore, by cutting the top surface of the translucent member along with the sealing member, variations in the height of the light-emitting surface caused by variations in the thickness of the translucent member can be reduced, achieving high positional accuracy in the height direction (z-axis direction).

[0035] (Fourth step) The fourth step is to separate and remove the base material of the precursor substrate from the intermediate body formed in the third step. The wiring member, alignment marks, semiconductor light-emitting elements, and sealing member remain, exposing the alignment marks from the sealing member. At the same time, the wiring member's connection terminal regions are also exposed from the sealing member. High processing accuracy in the height direction (z-axis direction) is achieved by using etching or polishing. Etching is a type of surface processing method that primarily targets metals, glass, and semiconductors, by chemically or electrochemically dissolving and removing the surface to obtain the desired shape. Polishing has two meanings: the grinding action, which is primarily used to create the required shape and dimensions, and the polishing action, which is primarily used to finish and polish the processed surface. Polishing processes include grinding with abrasive stones, buffing, lapping, chemical polishing, electrolytic polishing, and chemical mechanical polishing (CMP).

[0036] A step of forming a metal film on the connection terminal area exposed in the fourth step may be carried out following the fourth step, for example, by plating, vapor deposition, or sputtering.

[0037] (Fifth step) The fifth step is to cut the substrate in multiple directions using the exposed alignment marks as reference marks to separate the light-emitting devices. For example, cutting can be performed using a dicing machine or a blade such as a Thomson blade. Since the alignment marks and the cutting lines used to separate the light-emitting devices have a predetermined positional relationship, the shape and dimensions of the outer edges of the cut-out light-emitting devices in a plan view can be precisely controlled.

[0038] (Sixth step) The sixth step is to mount the light-emitting device formed in the fifth step on one side of a printed wiring board. At this time, the connection terminals of the wiring member of the light-emitting device are electrically and mechanically connected to the conductor wiring of the printed wiring board, and the light-emitting device is fixed in a predetermined position on the printed wiring board. The connection terminals to the printed wiring board can be made via a conductive bonding material such as solder, or by diffusion bonding, surface activated bonding, or ultrasonic bonding. When the light-emitting device is mounted on the printed wiring board, the shape of the outer edge of the light-emitting device in a planar view is recognized and the mounting and fixing are performed. Therefore, the positional accuracy of the light-emitting device in the horizontal direction (in the x-y plane) on the printed wiring board is affected by the positional accuracy between the alignment mark and the connection terminal area of ​​the wiring member achieved in the first step and the shape and dimensional accuracy of the outer edge of the light-emitting device in a planar view achieved in the fifth step.

[0039] (Seventh step) The seventh step is a step of placing an optical element such as a lens on the side opposite the printed wiring board of the light-emitting device placed in a predetermined position on the printed wiring board in the sixth step. For example, the light-emitting device can be turned on, and the position of the optical element support member can be adjusted while observing the light distribution from the optical element. The adhesive placed between the optical element support member and the printed wiring board can be cured to fix the optical element and the optical element support member to the printed wiring board. The high accuracy in the height direction (z-axis direction) and horizontal direction (xy plane) of the light-emitting surface of the light-emitting device achieved through the first to sixth steps improves the reproducibility of the optical performance of the light source module manufactured through the seventh step. Furthermore, the time required for the seventh step can be reduced, yield can be improved, and the cost of manufacturing the light source module can be reduced.

[0040] First Embodiment 1 and 2, a light source module 100 according to a first embodiment of the present invention has one or more light emitting devices 110 mounted on a printed wiring board 60, and an optical element support member 80 that holds an optical element 70 arranged so as to overlap the light emitting device 110 in a plan view. The light emitting device 110 has a semiconductor light emitting element 21 mounted on a wiring member 12, a light-transmitting member 50 positioned on the semiconductor light emitting element 21, and a sealing member 40 that covers the side surfaces of the semiconductor light emitting element 21 and the side surfaces of the light-transmitting member 50 and also covers the wiring member 12.

[0041] A method for manufacturing a light source module 100 including a light emitting device 110 will be described below with reference to FIGS.

[0042] In the first step, as shown in FIGS. 3 and 4, a precursor substrate 10, which will be described below, is prepared. The base material 11 of the precursor substrate 10 is a GaN-coated sapphire wafer (diameter: 100 mm, thickness: 2 mm). The thickness of the GaN film on the first surface side of the base material 11 is, for example, 10 μm. The diameter of the GaN-coated sapphire wafer may be 75 mm to 200 mm, and the thickness may be 1 mm to 10 mm. The thickness of the GaN film may be 1 μm to 15 μm. The second surface, which is the surface opposite to the first surface of the base material 11, is sapphire. The linear expansion coefficient of the substrate 11 is 3×10 -5 / K or less, warping of the precursor substrate 10 and displacement of the bonding position can be reduced when the temperature rises during bonding of the semiconductor element 20 and the precursor substrate 10.

[0043] The wiring member 12 is a wiring mainly including multiple Cu pads. The multiple semiconductor element mounting surfaces 12b of the wiring member 12 are provided with Ni / Au films. An insulating layer such as an oxide film or a nitride film, such as SiO2, may be provided on the upper surface of the wiring member 12 except for the semiconductor element mounting surfaces 12b. This is to prevent the solder from spreading when melted and to reduce movement of the semiconductor elements during soldering.

[0044] In Figure 3, each alignment mark 14 is a hollowed-out rectangle made of a single layer of metal. The metal constituting the alignment marks 14 is the same as the metal constituting the wiring. Multiple alignment marks 14 are arranged on the first surface of the substrate 11 around a rectangular region that surrounds the entire semiconductor element mounting surfaces 12b. The shape of the horizontal alignment marks 14 (x-axis direction) is obtained by rotating the shape of the vertical alignment marks 14 (y-axis direction) by 90 degrees around the z-axis.

[0045] The plurality of rectangular alignment marks 14 arranged in the x-axis and y-axis directions in plan view include those used for cutting to separate the light emitting devices and those used for mounting semiconductor light emitting elements 21 on the semiconductor element mounting surface 12b of the wiring member 12. The plurality of alignment marks 14d used for cutting to separate the light emitting devices are arranged at equal intervals, four on each of the upper and lower sides in the horizontal direction and four on each of the left and right sides in the vertical direction of a rectangular region including all of the plurality of semiconductor element mounting surfaces 12b of the wiring member 12. The alignment marks 14s used to mount the semiconductor light emitting element 21 on the semiconductor element mounting surface 12b are arranged in three pairs horizontally on each of the upper and lower sides, and three pairs vertically on each of the left and right sides, and are disposed midway between adjacent alignment marks 14d. The intersection of the symmetry line of a pair of horizontally disposed alignment marks 14s and the symmetry line of a pair of vertically disposed alignment marks 14s coincides with the center of gravity of the pair of semiconductor element mounting surfaces 12b and also coincides with the position of the center of gravity of the pair of connection terminal regions 12a.

[0046] In the first embodiment, the semiconductor light emitting element 21 is a flip-chip type blue light emitting diode chip 21b containing InAlGaN-based semiconductor crystals. The surfaces of a pair of positive and negative element electrodes of the blue light emitting diode chip 21b are made of gold.

[0047] In the second step, the recognition camera of the surface mounter recognizes the multiple alignment marks 14s and measures their positions, the recognition camera captures the shape of the outer edge of the blue light-emitting diode chip 21b in a planar view, the component suction head picks up the blue light-emitting diode chip 21b, and controls the movement of the component suction head to the placement position using the position information of the multiple alignment marks 14s, and places the blue light-emitting diode chip 21b on the semiconductor element placement surface 12b, as shown in Figures 5 and 6.

[0048] A melted and solidified gold-tin (20 wt%) solder paste can be used as the conductive bonding member 30. When bonded, the gold in the element electrode of the blue light-emitting diode chip 21b diffuses, raising the melting point of the compound composed of gold and tin, so that the solidified conductive bonding member 30 will not melt due to the heat generated when soldering the light-emitting device 110 onto the printed wiring board 60.

[0049] 7 and 8, before the third step, a light-transmitting member 50 is placed on the upper surface (light extraction surface) of the flip-chip type blue light-emitting diode chip 21b. The light-transmitting member 50 is a silicone resin sheet containing YAG phosphor particles. A transparent silicone resin is disposed between the light-transmitting member 50 and the blue light-emitting diode chip 21b for adhesion and light extraction.

[0050] Next, a dicing blade is used to cut the side of the placed light-transmitting member 50 so that the outer edge of the upper surface of the light-transmitting member 50 is inside the outer edge of the upper surface of the blue light-emitting diode chip 21b in a plan view. As shown in FIGS. 9 and 10, a flange is formed on the lower part of the side of the light-transmitting member 50. A dicing device with two spindle shafts is used to perform a two-stage process, first cutting down to the upper surface of the flange and then cutting down to the lower surface of the flange. By reducing the area of ​​the light-emitting surface, brightness is increased, and high positional accuracy in the horizontal direction (in the xy plane) as well as high accuracy in shape and size of the top surface of the light-transmitting member 50, which serves as the light-emitting surface, is achieved. The dimensional accuracy of processing by the dicing device is about ±15 μm, which is higher than the dimensional accuracy of the bonding position of the semiconductor light-emitting element 21. Therefore, even if there is variation in the planar positions and areas of the multiple blue light-emitting diode chips 21b, the positions, shapes and dimensions of the multiple light-emitting surfaces can be aligned.

[0051] 11, in the third step, the sealing member 40 is placed on the precursor substrate 10, including the periphery of the blue light-emitting diode chip 21b, by printing, potting, or injection molding. A white resin obtained by mixing titanium oxide particles into silicone resin can be used as the sealing member 40. The sealing member 40, which is placed so as to cover the first surface side of the precursor substrate 10, including the blue light-emitting diode chip 21b and the light-transmitting member 50, is thermally cured.

[0052] Then, the upper surfaces of the sealing member 40 and the light-transmitting member 50 are ground with a grinding wheel until the light emitting surface reaches a desired height, as shown in Fig. 13. Then, the light emitting surface of the light emitting device 310 is formed as shown in Fig. 12.

[0053] 14, in the fourth step, a laser lift-off process is used to first remove the sapphire wafer from the base material 11. Laser light is irradiated from the second surface side of the base material 11 to decompose the GaN at the interface between the sapphire wafer and the GaN film, thereby peeling off the sapphire wafer. The laser used in the laser lift-off process is an excimer laser or a diode-pumped solid-state laser (DPSS).

[0054] Next, the GaN film remaining after the laser lift-off process is removed using CMP. As shown in Figure 15, no GaN film remains on the polished surface, and the polished surface includes the encapsulation member 40, multiple alignment marks 14 surrounded by the encapsulation member 40, and multiple connection terminal regions 12a of the wiring member 12 surrounded by the encapsulation member 40. Since the laser lift-off process can peel the sapphire wafer at the interface between the sapphire wafer and the GaN film, high processing accuracy in the z-axis direction can be achieved. Because the GaN film is a hard and brittle material with a thin film thickness, it is easy to control the amount of polishing within the surface, and high processing accuracy in the z-axis direction can be achieved.

[0055] 16 and 17, the connection terminal 13 is a Ni / Au film formed by sputtering in the connection terminal region 12a. Ni is used as a barrier layer to reduce the diffusion of Au and Cu, and the Au on the top surface is arranged to prevent oxidation of Cu and Ni, thereby preventing poor electrical connection due to the formation of an oxide film.

[0056] The connection terminal 13 is formed by sputter-depositing a Ni / Au film over the entire surface polished in the fourth step, and then removing the Ni / Au film on the white resin sealing member 40 by laser ablation, while leaving the Ni / Au film on the connection terminal region 12a exposed by polishing.

[0057] As shown in FIGS. 18 and 19, in the fifth step, a dicing device is used to perform a full cut so as to pass through the alignment marks 14d arranged vertically and horizontally, thereby cutting out a plurality of light emitting devices 110.

[0058] In the sixth step, for example, Sn-Ag-Cu solder paste (cream solder) is applied to the connection terminal mounting pads of the wiring 62 on the printed wiring board 60, which is made of glass epoxy as a base material. The solder is applied by printing using a metal mask, for example. When placing the light emitting device 110 on the printed wiring board 60, a recognition camera of the surface mounter recognizes the connection terminal mounting pattern on the printed wiring board 60 and the shape of the outer edge of the light emitting device 110 in a planar view. Then, a component suction head picks up and controls the position of the light emitting device 110, and places it on the printed wiring board 60 as shown in FIG. 20. The board is then passed through a reflow furnace and reflow soldered at 280°C or less.

[0059] Since the connection terminal 13 has a larger area than the blue light-emitting diode chip 21b in a plan view, it is possible to increase the bonding area between the light-emitting device 110 and the printed wiring board 60. This increases the bonding strength and also makes it possible to easily dissipate heat generated by the blue light-emitting diode chip 21b, thereby reducing deterioration in performance and lifespan due to temperature rise.

[0060] In the seventh step, the light-emitting device is activated to emit light, and the position of the optical element support member 80 holding the biconvex lens 71 is adjusted while observing the imaging state of the light emitted from the biconvex lens 71. The ultraviolet-curing adhesive 90 placed between the optical element support member 80 and the printed wiring board 60 is then irradiated with ultraviolet light to harden. The optical element support member 80 is a lens holder that supports the biconvex lens 71 by sandwiching it between them. The biconvex lens 71 is inserted into the optical element support member 80 and fixed in place with a screw ring. As shown in FIGS. 1 and 2, the optical element support member 80 is attached to the printed wiring board 60 with, for example, the ultraviolet-curing adhesive 90.

[0061] In the first embodiment, the optical element 70 is, for example, a biconvex lens 71 made of acrylic resin. Because the numerical aperture of the biconvex lens 71 is large when viewed from the light exit surface of the light emitting device, the relative positional accuracy between the light exit surface of the light emitting device and the biconvex lens 71 in the z-axis direction in a coordinate system in which the optical axis of the biconvex lens 71 is in the z-axis direction is important.

[0062] Second Embodiment A light source module 200 including a light emitting device 210 according to a second embodiment of the present invention will be described below, as shown in Fig. 21. In the description of each component of the light source module 200, parts that overlap with the description of each component of the light source module according to the first embodiment will be omitted.

[0063] In the light source module 200, the semiconductor element 20 uses a semiconductor light emitting element 21 and a Zener diode that protects the semiconductor light emitting element 21 from overcurrent. The semiconductor light emitting element 21 is a flip-chip type blue light emitting diode chip 21b. The light-transmitting member 50 uses a glass plate with a phosphor particle layer formed on one side thereof. The phosphor particle layer of the light-transmitting member 50 is closer to the blue light emitting diode chip 21b than the glass plate. A metal-based substrate is used as the printed wiring board 60. A parabolic mirror 72 is used as the optical element 70. The parabolic mirror 72 uses an aluminum plating film formed by, for example, aluminum vapor deposition on the surface of a molded product made of a magnesium alloy that functions as the optical element support member 80. The focus of the parabolic mirror 72 is located at the center of the light-emitting surface of the light-emitting device 210.

[0064] The base material 11 of the precursor substrate 10 is a Si wafer. The dimensions of the Si wafer are, for example, a diameter of 300 mm and a thickness of 0.75 mm.

[0065] In the description of the manufacturing method of the second embodiment, the overlapping parts with the description of the manufacturing method of the first embodiment will be omitted.

[0066] In the third step, the sealing member 40 is placed on the precursor substrate 10 by a potting method, including the periphery of the blue light-emitting diode chip 21b. When placing the sealing member 40, the sealing member 40 is placed so as to cover the side surfaces of the blue light-emitting diode chip 21b and the side surfaces of the light-transmitting member 50, but not the top surface of the light-transmitting member 50. Then, the sealing member 40 is thermally cured.

[0067] In the fourth step, after thin finish grinding, the base material 11 of the Si wafer is removed using CMP. Since Si, which is a hard and brittle material, is finish-processed by CMP, high processing accuracy in the z-axis direction can be achieved.

[0068] <Third embodiment> A light source module 300 including a light emitting device 310 according to a third embodiment of the present invention will be described. In the description of each component of the light source module 300, parts that overlap with the description of each component of the light source module according to the first embodiment will be omitted.

[0069] In the light source module 300 according to the third embodiment, the wiring member 12 is a multilayer wiring consisting of four layers. The first layer shown in FIG. 22 is a layer consisting of Cu wiring 12m1 and an insulator 12i1 surrounding the wiring. The second layer shown in FIG. 23 is a layer consisting of Cu wiring 12m2 and a copper insulator 12i2 surrounding the wiring. The third layer shown in FIG. 24 is a layer consisting of Cu wiring 12m3 and an insulator 12i3 surrounding the wiring. The fourth layer shown in FIG. 25 is a layer consisting of Ni / Au wiring 12m4 and an insulator 12i4 surrounding the wiring. The insulators 12i1, 12i2, 12i3, and 12i4 are made of, for example, a transparent SiO2 film. In a plan view, the total area of ​​the wiring 12m1, the total area of ​​the wiring 12m2, and the total area of ​​the wiring 12m3 is larger than the total area of ​​the wiring 12m4 on the semiconductor element mounting surface 12b side. The multi-layer wiring can be formed by a semi-additive process or a damascene process.

[0070] In the light source module 300, the semiconductor element 20 is a plurality of semiconductor light-emitting elements 21 capable of emitting light of different colors. The semiconductor light-emitting elements 21 are a plurality of light-emitting diode chips, specifically, three types of flip-chip light-emitting diode chips (a blue light-emitting diode chip 21b, a green light-emitting diode chip 21g, and a red light-emitting diode chip 21r). Multilayer wiring is used as the wiring member 12. A resin plate with light-diffusing particles dispersed therein is used as the light-transmitting member 50. As shown in FIG. 27, in the light-emitting device 310, three light-transmitting members 50 are arranged in a row, and the three types of light-emitting diode chips 21b, 21g, and 21r are arranged in a row beneath each light-transmitting member 50. As shown in FIG. 25, each light-emitting device 310 has three pairs of semiconductor element mounting surfaces 12b of the wiring 12m4, each corresponding to the blue light-emitting diode chip 21b, the green light-emitting diode chip 21g, and the red light-emitting diode chip 21r, respectively. The wiring member 12 includes three connection terminal regions 12aa electrically connected to the positive element electrodes (anodes) of the three types of light-emitting diode chips 21b, 21g, and 21r, respectively, and one connection terminal region 12ac electrically connected in common to the negative element electrodes (cathodes) of the three types of light-emitting diode chips 21b, 21g, and 21r. As shown in FIG. 22, each of the connection terminal regions 12aa and 12ac is rectangular in plan view. There are three connection terminal regions 12aa and one connection terminal region 12ac per light-emitting device 310. The connection terminal regions 12aa and 12ac are arranged so that, when one side of each of the four rectangular connection terminal regions 12aa and 12ac is selected for each light-emitting device 310 in plan view, all four selected sides do not overlap on the same straight line.

[0071] When one side is selected from each of the four rectangular connection terminal areas 12aa, 12ac per light-emitting device 310 in such a way that the four sides are aligned on the same straight line, the outer edges of the pads on the printed wiring board 60 corresponding to the four sides will all be aligned on the same straight line, and since the surface of the molten solder on the pad is curved during reflow soldering, the light-emitting surface of the light-emitting device 310 may become tilted and not parallel to the upper surface of the printed wiring board 60. This is because, when the solder melts during reflow soldering, it aggregates on the pad due to surface tension, which causes it to form a sphere, which is the minimum geometric area, and the connection terminal is attracted to the pad by this aggregation force. When one side is selected from each of the four rectangular connection terminal areas 12aa, 12ac for one light-emitting device 310 in plan view, the four rectangular connection terminal areas 12aa, 12ac are arranged so that all four selected sides do not overlap on the same straight line, thereby preventing the light emission surface of the light-emitting device 310 from deviating from parallelism with the upper surface of the printed wiring board 60, that is, achieving high precision in the rotation angle around the x-axis and / or the rotation angle around the y-axis.

[0072] In the third embodiment, a case where one light emitting device 310 has three light emitting diode chips has been described, but the present invention is not limited to the third embodiment. The same applies to a case where one light emitting device has two light emitting diode chips and three or more isolated rectangular connection terminal regions in multilayer wiring, and by selecting one side from each of the three rectangular connection terminal regions per light emitting device in plan view, and by arranging the selected sides in such a way that none of the selected sides overlap on the same straight line, it is possible to prevent the light emission surface of the light emitting device from deviating from parallel to the upper surface of the printed wiring board.

[0073] In the description of the manufacturing method of the third embodiment, the overlapping parts with the description of the manufacturing method of the first embodiment will be omitted. In a first step, a precursor substrate is prepared on one main surface (first surface) of a plate-shaped base material 11, on which first-layer wiring 12m1, second-layer wiring 12m2 of wiring member 12, and multiple alignment marks 14 are formed from the same material. The height of the top surfaces of the multiple alignment marks 14 from the first surface is equal to the height from the first surface of the second layer of wiring member 12. The height of the top surface of wiring member 12 from the first surface is equal to or greater than the height of the top surfaces of the multiple alignment marks 14 from the first surface. Because insulators 12i3 and 12i4 are transparent SiO2 films, the recognition camera of the surface mounter can recognize the multiple alignment marks 14 even if the top surfaces of the multiple alignment marks 14 are covered by insulators 12i3 and 12i4.

[0074] Multilayer wiring is used for the wiring member 12, which simplifies the wiring pattern of the printed wiring board 60. Since the connection terminals 13 have a larger area than the light-emitting diode chips 21b, 21g, and 21r in plan view, the bonding area between the light-emitting device 310 and the printed wiring board 60 can be increased, thereby improving bonding strength and heat dissipation.

[0075] <Fourth embodiment> A light source module 400 according to a fourth embodiment of the present invention will be described. In the description of each component of the light source module 400, parts that overlap with the description of each component of the light source module according to the first embodiment will be omitted.

[0076] In the light-emitting device 410 included in the light source module 400, as shown in FIG. 32, the semiconductor elements 20 include a plurality of semiconductor light-emitting elements 21 and an IC chip 20c that controls the drive current of the semiconductor light-emitting elements 21. The semiconductor light-emitting elements 21 are four flip-chip blue light-emitting diode chips 21b. As shown in FIGS. 28 to 31, the wiring member 12 includes four multilayer wiring layers. For each light-emitting device 410, one translucent member 50 is used, one each of a resin plate dispersed with light-diffusing particles, a resin plate dispersed with yellow phosphor particles, a resin plate dispersed with green phosphor particles, and a resin plate dispersed with red phosphor. The sealing member 40 is a white resin in which titanium oxide particles are mixed into epoxy resin. As shown in FIGS. 32 and 33, the four translucent members 50 and four blue light-emitting diode chips 21b are arranged in two rows and two columns in the light-emitting device 410.

[0077] Since the light emitting device 410 includes the IC chip 20c, the function of the external circuit can be simplified.

[0078] The description of the manufacturing method of the fourth embodiment will be omitted if it overlaps with the description of the manufacturing method of the third embodiment. The base material 11 of the precursor substrate 10 is a GaAs wafer. The dimensions of the Si wafer are, for example, a diameter of 150 mm and a thickness of 0.5 mm.

[0079] In the fourth step, after grinding and lapping polishing, the base material 11 of the GaAs wafer is selectively removed by wet etching. Because it is selective etching, high processing accuracy in the z-axis direction can be achieved. [Industrial Applicability]

[0080] The light source module according to each embodiment of the present disclosure can be used as a light source for backlighting of a liquid crystal display, a light source for a vehicle lamp, a light source for various lighting fixtures, a light source for a video display device, and the like. [Explanation of symbols]

[0081] 100, 200, 300, 400 Light Source Module 110, 210, 310, 410 Light-emitting devices 10. Precursor Substrate 11 Base material 12 Wiring materials 12m1, 12m2, 12m3, 12m4 wiring 12i1, 12i2, 12i3, 12i4 insulators 12a, 12aa, 12ac connection terminal area 12b Semiconductor element mounting surface 13 Connection terminal 14 Alignment marks 14d Alignment marks used for singulation 14s Alignment marks used for semiconductor element placement 20 Semiconductor elements 20c IC chip 21 Semiconductor light emitting element 21b Blue light-emitting diode chip 21g Green LED chip 21r Red light emitting diode chip 30 Conductive joining material 40 Sealing member 50 Translucent material 60 Printed Wiring Board 62 Wiring 70 Optical Elements 71 Convex Lens 72 Parabolic mirror 80 Optical element support member 90 Adhesive

Claims

1. a first step of preparing a precursor substrate including a base material having a first surface, and a wiring member and a plurality of alignment marks disposed on the first surface; a second step of placing a plurality of semiconductor light emitting elements on the wiring member; a third step of covering side surfaces of the semiconductor light emitting elements and the alignment marks with a sealing member; a fourth step of removing the base material from the wiring member, the alignment marks, and the sealing member to expose the alignment marks; a fifth step of singulating the semiconductor substrate into individual light emitting devices, each including one or more semiconductor light emitting elements from the plurality of semiconductor light emitting elements, based on the exposed alignment marks; a sixth step of mounting the light emitting device on a printed wiring board; a seventh step of arranging a lens on the side of the placed light emitting device opposite to the printed wiring board; A method for manufacturing a light source module comprising:

2. a first step of preparing a precursor substrate including a base material having a first surface, and a wiring member and a plurality of alignment marks disposed on the first surface; a second step of placing a plurality of semiconductor light emitting elements on the wiring member; a third step of covering side surfaces of the semiconductor light emitting elements and the alignment marks with a sealing member; a fourth step of removing the base material from the wiring member, the alignment marks, and the sealing member to expose the alignment marks; a fifth step of singulating the semiconductor substrate into individual light emitting devices, each including one or more semiconductor light emitting elements from the plurality of semiconductor light emitting elements, based on the exposed alignment marks; A method for manufacturing a light emitting device comprising the steps of:

3. The method for manufacturing a light emitting device according to claim 2 , further comprising, before the third step, a step of placing a light-transmitting member on the upper surfaces of the plurality of semiconductor light emitting elements.

4. The method for manufacturing a light emitting device according to claim 3 , further comprising the step of cutting the upper surface of the sealing member and the upper surface of the light-transmitting member before the fifth step.

5. The method for manufacturing a light emitting device according to claim 3 , further comprising the step of cutting a side surface of the light-transmitting member before the third step.

6. 3. The method for manufacturing a light-emitting device according to claim 2, wherein the wiring member has multi-layer wiring, the multi-layer wiring has three or more isolated rectangular connection terminal areas for one light-emitting device, and when one side is selected from each of the three or more isolated rectangular connection terminal areas in a planar view, there is no way to select all of the selected sides so that they all overlap on the same straight line.

7. 3. The method for manufacturing a light emitting device according to claim 2, wherein the wiring member has a plurality of connection terminal regions, the fourth step includes a step of exposing the plurality of connection terminal regions, and a step of forming a metal film on the plurality of connection terminal regions after the fourth step.

8. The method for manufacturing a light emitting device according to claim 2 , wherein the height of the top surface of the wiring member from the first surface is equal to or greater than the height of the top surfaces of the plurality of alignment marks from the first surface.

9. The method for manufacturing a light emitting device according to claim 2 , wherein the one or more semiconductor light emitting elements are a plurality of light emitting diode chips, and the plurality of light emitting diode chips can emit light of different colors.

10. 3. The method for manufacturing a light emitting device according to claim 2, wherein the substrate is any one of a glass plate, a ceramic plate, a Si wafer, a GaAs wafer, a GaP wafer, an InP wafer, a GaN wafer, an AlN wafer, and a GaN-coated sapphire wafer.

11. The method for manufacturing a light-emitting device according to claim 2 , wherein the substrate is a sapphire wafer with a GaN film, and the fourth step includes laser lift-off processing.

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