Method and system for detecting defective cells

Abstract

To provide a defective cell detection method.SOLUTION: The method of the present disclosure includes performing charging of a cell such that a state of charge (StateofChargeSOC) of the cell is included in a preset range, acquiring first charging data including differential voltage information of an anode of the cell while the charging of the cell is performed, wherein the anode includes graphite and silicon, calculating a charging parameter related to the silicon of the anode based on the first charging data, and determining whether the cell is defective based on the charging parameter related to the silicon.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a method and system for detecting defective cells. [Background technology]

[0002] Unlike primary batteries, which cannot be recharged, secondary batteries are batteries that can be charged and discharged. Low-capacity secondary batteries are used in small portable electronic devices such as smartphones, feature phones, laptop computers, digital cameras, and camcorders, while high-capacity secondary batteries are widely used as motor drive power sources and power storage batteries in hybrid vehicles, electric vehicles, and the like. Such secondary batteries include an electrode assembly consisting of a positive electrode and a negative electrode, a case that houses the electrode assembly, and electrode terminals connected to the electrode assembly.

[0003] On the other hand, defects in secondary batteries can lead to problems such as fires. In particular, defects in the negative electrode of a secondary battery can cause lithium metal to be deposited from the negative electrode, shortening the lifespan of the secondary battery and potentially leading to problems such as fires. In order to detect such defects in secondary batteries, conventional techniques have involved dismantling the secondary battery and then examining the negative electrode condition of the cell using an electron microscope or the like. However, this conventional technique requires dismantling the cell to diagnose the internal condition of the secondary battery, which has the disadvantage of discarding normal cells as well.

[0004] The foregoing information disclosed in this Background of the Invention section is intended solely to enhance understanding of the background of the present invention and may therefore include information that does not constitute prior art. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Korean Patent Publication No. 10-2023-0090829 (2023.06.22) Summary of the Invention [Problem to be solved by the invention]

[0006] The present disclosure provides a method and system for detecting a defective cell to solve the above technical problems.

[0007] However, the technical problems that the present invention aims to solve are not limited to the above-mentioned problems, and other problems not mentioned should be clearly understood by those skilled in the art from the description of the invention described below. [Means for solving the problem]

[0008] A method for detecting a defective cell according to one embodiment of the present invention may include the steps of: charging a cell so that the cell's State of Charge (SOC) falls within a predetermined range; acquiring first charging data including differential voltage information of the cell's negative electrode while charging the cell, the negative electrode including graphite and silicon; calculating charging parameters associated with the silicon of the negative electrode based on the first charging data; and determining whether the cell is defective based on the charging parameters associated with the silicon.

[0009] A faulty cell detection system according to one embodiment of the present invention includes a communications module, a memory, and at least one processor coupled to the memory and configured to execute at least one computer-readable program stored in the memory, the at least one program including instructions for: charging a cell so that the cell's state of charge (SOC) falls within a predetermined range; acquiring first charging data including differential voltage information of a negative electrode of the cell while charging the cell, wherein the negative electrode includes graphite and silicon; calculating charging parameters associated with silicon in the negative electrode based on the first charging data; and determining whether the cell is faulty based on the charging parameters associated with silicon. [Effects of the Invention]

[0010] According to some embodiments of the present disclosure, defective cells can be detected by electrochemical analysis without disassembling the cells, which allows users to easily detect defective cells by simply charging the cells, thereby improving the reliability of defective cell detection.

[0011] According to some embodiments of the present disclosure, defective cells can be detected nondestructively. Furthermore, defective cells can be reactivated to improve electrolyte impregnation and stabilize defective negative electrode active materials. Cells that are not reactivated by the reactivation process can be treated as defective. This improves the reliability of defective cell detection.

[0012] However, the effects obtained by the present invention are not limited to the effects described above, and other technical effects not mentioned herein should be clearly understood by those skilled in the art from the description of the invention described below. [Brief explanation of the drawings]

[0013] The following drawings and the like of this application illustrate preferred embodiments of the present invention and, together with the detailed description of the invention described below, serve to further understand the technical concept of the present invention, and therefore the present invention should not be interpreted as being limited to only the matters depicted in such drawings. [Figure 1] FIG. 10 is a diagram illustrating an example of a method for detecting a defective cell according to an embodiment of the present disclosure. [Figure 2] 1 is a schematic diagram illustrating a configuration in which an information processing system is communicably connected to multiple user terminals to detect a faulty cell according to an embodiment of the present disclosure. [Figure 3] 1 is a block diagram showing an internal configuration of a user terminal and an information processing system according to an embodiment of the present disclosure. [Figure 4] FIG. 2 is a diagram illustrating an example of an internal configuration of a processor of an information processing system according to an embodiment of the present disclosure. [Figure 5] FIG. 10 is a diagram illustrating an example of a graph showing a change in differential voltage due to charging according to an embodiment of the present disclosure. [Figure 6]FIG. 10 is a diagram showing an example of the charge amount of a negative electrode at a C rate of charge according to an embodiment of the present disclosure. [Figure 7] FIG. 10 is a diagram showing an example of a graph illustrating a change in differential voltage depending on the content of the electrolyte solution according to an embodiment of the present disclosure. [Figure 8] FIG. 10 is a diagram showing an example of a change in the charge amount of silicon depending on the content of the electrolyte solution according to an embodiment of the present disclosure. [Figure 9] FIG. 10 is a diagram illustrating an example of a method for detecting a defective cell according to an embodiment of the present disclosure. [Figure 10] FIG. 10 is a diagram illustrating an example of a method for detecting a defective cell according to an embodiment of the present disclosure. [Figure 11] 1 is a flowchart illustrating an example of a method for detecting a defective cell according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0014] <Summary of the Invention> According to one embodiment, the method may further include outputting information associated with the cell in response to the cell being determined to be bad.

[0015] According to one embodiment, the charging parameters associated with silicon can be related to the impregnation state of the negative electrode with the electrolyte.

[0016] According to one embodiment, the C-rate during the charging of the cell may be higher than a predetermined threshold.

[0017] According to one embodiment, the predetermined range may be SOC 85% or greater.

[0018] According to one embodiment, a charge parameter associated with silicon may be determined based on the difference between a predetermined reference value and a differential voltage value of the negative electrode over a range of predetermined cell states of charge.

[0019] According to one embodiment, the charge parameters associated with silicon can include a silicon dominated reaction peak.

[0020] According to one embodiment, the step of determining whether or not the cell is defective includes determining whether or not the cell is defective based on a charging parameter related to silicon and a predetermined threshold value, and the predetermined threshold value may be determined based on a capacity retention rate depending on the content of the electrolyte.

[0021] According to one embodiment, the cells may be cells that have undergone an activation process.

[0022] According to one embodiment, the method may further include the step of proceeding with a reactivation process for the cell in response to the cell being determined to be bad.

[0023] According to one embodiment, the method may further include the steps of acquiring second charge data after performing the cell reactivation process, and determining whether the cell is defective based on the second charge data.

[0024] According to one embodiment, the at least one program may further include instructions for outputting information associated with the cell in response to the cell being determined to be defective.

[0025] According to one embodiment, the charging parameters associated with silicon can be related to the impregnation state of the negative electrode with the electrolyte.

[0026] According to one embodiment, the C-rate during the ongoing charging of the cell can be increased above a predetermined threshold.

[0027] According to one embodiment, the predetermined range may be SOC 85% or greater.

[0028] According to one embodiment, a charge parameter associated with silicon may be determined based on the difference between a predetermined reference value and a differential voltage value of the negative electrode over a range of predetermined cell states of charge.

[0029] According to one embodiment, determining whether or not the cell is defective includes determining whether or not the cell is defective based on a charging parameter related to silicon and a predetermined threshold value, and the predetermined threshold value may be determined based on a capacity retention rate depending on the content of the electrolyte.

[0030] According to one embodiment, the cell is a cell that has undergone an activation process, and the at least one program may further include instructions for performing a reactivation process on the cell in response to the cell being determined to be defective.

[0031] According to one embodiment, the at least one program may further include instructions for acquiring second charge data after performing the cell reactivation process and determining whether the cell is defective based on the second charge data.

[0032] <Detailed Description of the Invention> Preferred embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. First, the terms and phrases used in this specification and claims should not be interpreted as being limited to their ordinary and dictionary meanings, but should be interpreted in a way that is consistent with the technical concept of the present invention, based on the principle that the inventor can appropriately define the concepts of terms in order to best describe his or her invention. Therefore, it should be understood that the embodiments described in this specification and the configurations shown in the drawings are only some preferred embodiments of the present invention and do not represent the entire technical concept of the present invention, and that various equivalents and modifications may exist as of the time of filing this application.

[0033] Furthermore, as used herein, "comprise," "comprising," "include," and "including" specify the presence of a stated shape, number, step, operation, member, element, and / or group, but do not exclude the presence or addition of one or more other shapes, numbers, operations, members, elements, and / or groups. Furthermore, when describing an embodiment of the present invention, "may" and "may be" can include "one or more embodiments of the present invention."

[0034] In order to facilitate understanding of the invention, the accompanying drawings may not be drawn to scale, and the dimensions of some components may be exaggerated. In addition, the same reference numerals are used to refer to the same components in different embodiments.

[0035] A statement that two comparison objects are "identical" means that they are "substantially identical." Therefore, being substantially identical can include cases where there is a deviation that is considered low in the art, for example, a deviation of 5% or less. Furthermore, a statement that a certain parameter is uniform in a given region can mean that the parameter is uniform on average.

[0036] Although terms such as "first" and "second" are used to describe various components, it is understood that these components are not limited by these terms. These terms are merely used to distinguish one component from another, and unless otherwise specified, a first component can be a second component.

[0037] Throughout the specification, unless specifically stated to the contrary, each element may be singular or plural.

[0038] The phrase "above (or below)" a component or "above (or below)" a component means that the component is not only placed in contact with the upper surface (or lower surface) of the component, but also means that other components may be interposed between the component and the component placed above (or below) the component.

[0039] Furthermore, when a component is described as being "coupled," "coupled," or "connected" to another component, it should be understood that the components may be directly coupled or connected to each other, but that other components may be "intervening" between the components, or that each component may be "coupled," "coupled," or "connected" via other components.

[0040] Furthermore, when a part is said to be electrically coupled to another part, this includes not only a direct connection but also a connection via another element therebetween.

[0041] Throughout the specification, "A and / or B" means A, or B, or A and B, unless specifically stated to the contrary. That is, "and / or" includes all or any combination of the listed items. "C through D" means at least C and at most D, unless specifically stated to the contrary.

[0042] Additionally, the terms "module" and "module" used herein refer to software or hardware components, each performing a specific function. However, the terms "module" and "module" are not limited to software or hardware. A "module" or "module" may reside on an addressable storage medium or execute one or more processors. Thus, by way of example, a "module" or "module" may include components such as software components, object-oriented software components, class components, and task components, as well as processes, functions, attributes, procedures, subroutines, program code segments, drivers, firmware, microcode, circuits, data, databases, data structures, tables, arrays, and variables. The components and "modules" or "modules" may be combined into fewer components and "modules" or "modules," or the functionality provided therein may be further separated into additional components and "modules" or "modules."

[0043] According to one embodiment of the present disclosure, a "module" or "unit" may be embodied with a processor and memory. "Processor" should be broadly interpreted to include a general-purpose processor, a central processing unit (CPU), a microprocessor, a digital signal processor (DSP), a controller, a microcontroller, a state machine, etc. In some environments, a "processor" may include an application-specific semiconductor (ASIC), a programmable logic device (PLD), a field-programmable gate array (FPGA), etc. A "processor" may include a combination of processing devices, such as a combination of a DSP and a microprocessor, a combination of multiple microprocessors, a combination of one or more microprocessors in conjunction with a DSP core, or any other such configuration. Additionally, "memory" should be broadly interpreted to include any electronic component capable of storing electronic information. "Memory" may include various types of processor-readable media, such as RAM (Random Access Memory), ROM (Read Only Memory), NVRAM (Non-Volatile Random Access Memory), PROM (Programmable Read-Only Memory), EPROM (Erasable Programmable Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), flash memory, magnetic or optical data storage devices, registers, etc. Memory is said to be in electronic communication with a processor if the processor can read / write information from or write information to the memory. Memory that is integrated into a processor is in electronic communication with the processor.

[0044] In the present disclosure, a "system" may include at least one of a server device and a cloud device, but is not limited to this. For example, a system may be composed of one or more server devices. As another example, a system may be composed of one or more cloud devices. As yet another example, a system may be operated by comprising both a server device and a cloud device.

[0045] In this disclosure, "display" may include any display device associated with a computing device, for example, any display device capable of displaying any information / data controlled by or provided by a computing device.

[0046] FIG. 1 illustrates an example of a method for detecting a defective cell according to an embodiment of the present disclosure. In one embodiment, a cell 110 undergoing an activation process may be connected to a charger 120 and a sensor 130. The charger 120 may charge the cell 110 so that the state of charge (SOC) of the cell 110 falls within a predetermined range. The predetermined range of the cell's SOC may be related to the impregnation state of the electrolyte in the negative electrode of the cell 110. For example, the predetermined range may be 85% SOC or higher. Furthermore, the C-rate during the cell charging process may be higher than a predetermined threshold (e.g., 0.3 C). Additionally, the sensor 130 may measure the voltage and current of the cell 110 while the cell 110 is being charged.

[0047] In one embodiment, a processor (at least one processor of an information processing system) can acquire charging data including differential voltage information of the negative electrode 140 of the cell 110 while the cell 110 is being charged. Here, the differential voltage information of the negative electrode 140 is obtained by differentiating the voltage profile during charging of the battery and can represent the rate of change of voltage with respect to the quantity of charge (Q). The negative electrode 140 can be a silicon-graphite composite negative electrode including silicon 142 and graphite 144.

[0048] In one embodiment, the processor may calculate charging parameters associated with the silicon 142 of the negative electrode 140 based on the charging data. Here, the charging parameters associated with the silicon 142 may be associated with the impregnation state of the electrolyte in the negative electrode. Specifically, if the impregnation state of the electrolyte in the negative electrode is good, the resistance of the negative electrode may decrease, thereby increasing the negative electrode capacity. In contrast, if the impregnation state of the electrolyte in the negative electrode 140 is poor, the resistance of the negative electrode may increase, thereby decreasing the negative electrode capacity. For example, due to the difference in C rate characteristics between the silicon 142 and the graphite 144, the charge capacity of the graphite 144 may be relatively lower than the charge capacity of the silicon 142 within a predetermined range of charge states.

[0049] This can also be confirmed by a charge parameter (e.g., a silicon-dominant reaction peak in differential voltage information) associated with the silicon 142. As will be described in detail later with reference to FIG. 5, the charge parameter associated with the silicon 142 is the average difference between the differential voltage value of the negative electrode 140 in a predetermined range of the state of charge of the cell 110 and a predetermined reference value, and can be an indicator for determining the state of the negative electrode 140.

[0050] In one embodiment, the processor may determine whether the cell 110 is faulty based on a charging parameter associated with the silicon 142. Specifically, the processor may determine whether the cell 110 is faulty based on a charging parameter associated with the silicon 142 and a predetermined threshold. An example of determining whether the cell 110 is faulty is described in detail below with reference to FIG. 9.

[0051] In one embodiment, the processor may output information related to the cell 110 in response to determining that the cell 110 is defective. Here, the information related to the cell 110 may include, but is not limited to, at least one of identification information of the cell 110, location information of the cell 110, voltage information of the cell 110, differential voltage information of the cell 110, charging parameters of the cell 110, whether the cell 110 is defective, and whether a revitalization process is required. Thus, a user can easily identify a cell that should be treated as defective or a cell that needs a revitalization process by using the information related to the cell 110 output on the display.

[0052] This configuration allows defective cells to be detected by electrochemical analysis without disassembling the cells, allowing users to easily detect defective cells simply by charging the cells, improving the reliability of defective cell detection.

[0053] 2 is a schematic diagram illustrating a configuration in which an information processing system 230 is communicably connected to a plurality of user terminals 210_1, 210_2, and 210_3 to detect a bad cell according to an embodiment of the present disclosure. As shown in the figure, the plurality of user terminals 210_1, 210_2, and 210_3 may be connected to the information processing system 230, which can provide a bad cell determination service via a network 220. Here, the plurality of user terminals 210_1, 210_2, and 210_3 may include terminals of users who will receive the bad cell determination service.

[0054] In one embodiment, the information processing system 230 may include one or more server devices and / or databases capable of storing, providing, and executing computer-executable programs (e.g., downloadable applications) and data related to providing the defective cell determination service, and one or more distributed computing devices and / or distributed databases based on a cloud computing service.

[0055] The bad cell determination service provided by the information processing system 230 may be provided to users via a bad cell determination application, a web browser, a web browser extension program, etc. installed in each of the user terminals 210_1, 210_2, and 210_3. For example, the information processing system 230 may provide information or perform corresponding processing in response to a bad cell determination request received from the user terminals 210_1, 210_2, and 210_3 via the bad cell determination application, etc.

[0056] A plurality of user terminals 210_1, 210_2, and 210_3 can communicate with the information processing system 230 via a network 220. The network 220 can be configured to enable communication between the plurality of user terminals 210_1, 210_2, and 210_3 and the information processing system 230. Depending on the installation environment, the network 220 can be configured from a wired network such as Ethernet (registered trademark), PLC (Power Line Communication), telephone line communication device, and RS-serial communication, a mobile communication network, a wireless network such as WLAN (Wireless LAN), Wi-Fi (registered trademark), Bluetooth (registered trademark), and ZigBee (registered trademark), or a combination thereof. The communication method is not limited and can include not only a communication method utilizing a communication network that can include the network 220 (e.g., a mobile communication network, a wired Internet, a wireless Internet, a broadcast network, a satellite network, etc.), but also short-range wireless communication between the user terminals 210_1, 210_2, and 210_3.

[0057] 2 illustrates a mobile phone terminal 210_1, a tablet terminal 210_2, and a PC terminal 210_3 as examples of user terminals, but is not limited thereto. The user terminals 210_1, 210_2, and 210_3 may be any computing devices capable of wired and / or wireless communication and capable of installing and executing a poor cell determination application or a web browser. For example, the user terminals may include AI speakers, smartphones, mobile phones, navigation systems, desktop computers, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), tablet PCs, game consoles, wearable devices, internet of things (IoT) devices, virtual reality (VR) devices, augmented reality (AR) devices, set-top boxes, etc. Also, while FIG. 2 shows three user terminals 210_1, 210_2, and 210_3 communicating with the information processing system 230 via the network 220, this is not limited thereto, and a different number of user terminals may be configured to communicate with the information processing system 230 via the network 220.

[0058] FIG. 2 illustrates a configuration in which a user request (e.g., a request for determining a defective cell) is transmitted to the information processing system 230 via the user terminals 210_1, 210_2, and 210_3, but is not limited to this. The user request may be provided to the information processing system 230 via an input device associated with the information processing system 230, rather than via the user terminals 210_1, 210_2, and 210_3, and the result of processing the user request (e.g., whether or not there is a defective cell) may be provided to the user via an output device (e.g., a display, etc.) associated with the information processing system 230.

[0059] FIG. 3 is a block diagram showing the internal configuration of a user terminal 210 and an information processing system 230 according to an embodiment of the present disclosure. The user terminal 210 may refer to any computing device capable of executing applications, a web browser, and the like and capable of wired / wireless communication, and may include, for example, the mobile phone terminal 210_1, the tablet terminal 210_2, and the PC terminal 210_3 of FIG. 2. As shown in the figure, the user terminal 210 may include a memory 312, a processor 314, a communication module 316, and an input / output interface 318. Similarly, the information processing system 230 may include a memory 332, a processor 334, a communication module 336, and an input / output interface 338. As shown in FIG. 3, the user terminal 210 and the information processing system 230 may be configured to communicate information and / or data over the network 220 using their respective communication modules 316 and 336. Furthermore, the input / output device 320 may be configured to input information and / or data to the user terminal 210 and output information and / or data generated by the user terminal 210 via the input / output interface 318.

[0060] The memories 312 and 332 may include any non-transitory computer-readable recording medium. According to one embodiment, the memories 312 and 332 may include permanent mass storage devices such as read only memory (ROM), disk drives, solid state drives (SSDs), and flash memory. As another example, permanent mass storage devices such as ROM, SSDs, flash memory, and disk drives may be included in the user terminal 210 or the information processing system 230 as permanent storage devices separate from the memory. The memories 312 and 332 may also store an operating system and at least one program code.

[0061] Such software components may be loaded from a computer-readable recording medium separate from the memories 312, 332. Such separate computer-readable recording medium may include a recording medium directly connectable to the user terminal 210 and the information processing system 230, but may also include computer-readable recording media such as a floppy drive, a disk, a tape, a DVD / CD-ROM drive, and a memory card. As another example, the software components may be loaded into the memories 312, 332 via the communication modules 316, 336 rather than from a computer-readable recording medium. For example, at least one program may be loaded into the memories 312, 332 based on a computer program to be installed from a file provided via the network 220 by a developer or a file distribution system that distributes application installation files.

[0062] The processors 314, 334 may be configured to process computer program instructions by performing basic arithmetic, logic, and input / output operations. The instructions may be provided to the processors 314, 334 by the memories 312, 332 or the communications modules 316, 336. For example, the processors 314, 334 may be configured to execute instructions received by program code stored in a storage device, such as the memories 312, 332.

[0063] The communication modules 316 and 336 may provide configurations and functions for the user terminal 210 and the information processing system 230 to communicate with each other via the network 220, and may also provide configurations and functions for the user terminal 210 and / or the information processing system 230 to communicate with other user terminals or other systems (e.g., another cloud system) via the network 220. As an example, a request or data (e.g., a bad cell determination request) generated by the processor 314 of the user terminal 210 via program code stored in a storage device such as the memory 312 may be transmitted to the information processing system 230 via the network 220 under the control of the communication module 316. Conversely, a control signal or command provided by the processor 334 of the information processing system 230 may be received by the user terminal 210 via the communication module 316 of the user terminal 210 via the communication module 336 and the network 220.

[0064] The input / output interface 318 may be a means for interfacing with the input / output device 320. For example, the input device may include a device such as a camera including an audio sensor and / or an image sensor, a keyboard, a microphone, a mouse, etc., and the output device may include a device such as a display, a speaker, a haptic feedback device, etc. As another example, the input / output interface 318 may be a means for interfacing with a device that integrates components or functions for performing input and output, such as a touch screen. For example, when the processor 314 of the user terminal 210 processes instructions of a computer program loaded in the memory 312, a service screen configured using information and / or data provided by the information processing system 230 or another user terminal may be displayed on the display via the input / output interface 318. Although the input / output device 320 is illustrated as not being included in the user terminal 210 in FIG. 3, the present invention is not limited thereto and may be configured integrally with the user terminal 210. Furthermore, the input / output interface 338 of the information processing system 230 may be a means for interfacing with an input or output device (not shown) that may be coupled to the information processing system 230 or may be included in the information processing system 230. While the input / output interfaces 318, 338 are shown in Figure 3 as elements configured separately from the processors 314, 334, this is not limiting, and the input / output interfaces 318, 338 may also be configured to be included in the processors 314, 334.

[0065] The user terminal 210 and the information processing system 230 may include more components than those shown in FIG. 3. According to an embodiment, the user terminal 210 may be embodied to include at least a portion of the input / output device 320 described above. The user terminal 210 may also include other components such as a transceiver, a global positioning system (GPS) module, a camera, various sensors, and a database. For example, if the user terminal 210 is a smartphone, it may include components typically found in smartphones, and the user terminal 210 may also include various components such as an acceleration sensor, a gyro sensor, a microphone module, a camera module, various physical buttons, buttons using a touch panel, input / output ports, and a vibrator for vibration.

[0066] When a program or application for a bad cell determination service or the like is running, the processor 314 can receive text, images, videos, sounds, and / or actions, etc., entered or selected through an input device such as a touch screen, keyboard, camera including an audio sensor and / or image sensor, microphone, etc. connected to the input / output interface 318, and can store the received text, images, videos, sounds, and / or actions, etc. in the memory 312 or provide them to the information processing system 230 via the communication module 316 and the network 220.

[0067] The processor 314 of the user terminal 210 may be configured to manage, process, and / or store information and / or data received from the input / output device 320, other user terminals, the information processing system 230, and / or multiple external systems. The information and / or data processed by the processor 314 may be provided to the information processing system 230 via the communication module 316 and the network 220. The processor 314 of the user terminal 210 may transfer and output information and / or data to the input / output device 320 via the input / output interface 318. For example, the processor 314 may output or display the received information and / or data on a screen of the user terminal 210.

[0068] The processor 334 of the information processing system 230 may be configured to manage, process, and / or store information and / or data received from multiple user terminals 210 and / or multiple external systems. The information and / or data processed by the processor 334 may be provided to the user terminal 210 via the communication module 336 and the network 220.

[0069] 4 is a diagram illustrating an example of the internal configuration of a processor 334 of an information processing system according to an embodiment of the present disclosure. As shown in the figure, the processor 334 of the information processing system may include a charge data acquisition unit 410, a parameter calculation unit 420, a cell defect presence / absence determination unit 430, and an information output unit 440. While FIG. 4 illustrates a single processor, the present invention is not limited to this and may be configured with multiple processors.

[0070] The charge data acquisition unit 410 may acquire first charge data associated with the cell while charging the cell. Here, the first charge data may include differential voltage information of the negative electrode of the cell. The negative electrode of the cell may also include graphite and silicon. The first charge data acquired by the charge data acquisition unit 410 may be stored in the database 450.

[0071] In one embodiment, the charge data acquiring unit 410 may generate a control signal to be applied to a charger (e.g., 120 in FIG. 1) to acquire the first charge data and transmit the signal to the charger. Here, the control signal may be a signal that controls charging of the charger so that the state of charge of the cell falls within a predetermined range (e.g., SOC 85% or more) or a signal that controls the C rate of charging of the charger (e.g., 0.3C or more). For example, if the state of charge of a cell is 60%, the charge data acquiring unit 410 may generate a signal that controls charging of the charger so that the state of charge of the cell becomes 100% and transmit the signal to the charger.

[0072] The parameter calculation unit 420 may calculate charging parameters associated with silicon in the negative electrode of the cell based on the first charging data acquired by the charging data acquisition unit 410. Specifically, the parameter calculation unit 420 may calculate charging parameters associated with silicon based on a differential voltage at a specific state of charge of the cell. Here, the charging parameters associated with silicon may be associated with the impregnation state of the electrolyte in the negative electrode. For example, the parameter calculation unit 420 may calculate the charging parameters associated with silicon by calculating the average difference between a differential voltage value of the negative electrode collected during charging in a range of SOC 85% or higher and a predetermined reference value. The charging parameters calculated by the parameter calculation unit 420 may be stored in the database 450.

[0073] The cell defect determination unit 430 may determine whether a cell is defective based on the charge parameters related to silicon calculated by the parameter calculation unit 420. If the cell defect determination unit 430 determines that a cell that has already undergone an activation process is defective, it may generate a control signal to cause a reactivation process of the cell to be performed.

[0074] In one embodiment, after performing a reactivation process on a cell determined to be defective, the charge data acquisition unit 410 may acquire second charge data associated with the cell while charging the cell so that the state of charge of the cell falls within a predetermined range. Furthermore, the parameter calculation unit 420 may recalculate charge parameters associated with the silicon of the negative electrode based on the second charge data. The cell defect determination unit 430 may re-determine whether the cell is defective based on the recalculated charge parameters associated with the silicon. If the cell defect determination unit 430 determines that the cell is defective, the cell may ultimately be disposed of as defective.

[0075] The information output unit 440 may output information related to the cell in response to the cell being determined to be defective (e.g., a final defective determination after a reactivation process). Here, the information related to the cell may include, but is not limited to, at least one of cell identification information, cell location information, cell voltage information, cell differential voltage information, and silicon-related charging parameters as information stored in the database 450.

[0076] FIG. 5 is a diagram illustrating an example of a graph 500 showing the change in differential voltage with charging according to an embodiment of the present disclosure. Graph 500 shows the change in the differential voltage of the negative electrode with charging. A specific region 510 of graph 500 shows the change in the differential voltage of a cell at a specific state of charge (e.g., SOC 85% or higher). Referring to graph 500, it can be seen that in the specific region 510, the differential voltage of a cell with poor electrolyte impregnation is higher than that of a cell with good electrolyte impregnation. Because the C-rate characteristics of graphite contained in the negative electrode are poorer than those of silicon, poor electrolyte impregnation can increase overvoltage due to the C-rate characteristics of graphite. As a result, as the charge ratio of graphite decreases and the charge ratio of silicon increases, a silicon-dominant reaction peak is clearly visible, as in the specific region 510, where the differential voltage of a cell with poor electrolyte impregnation increases. As an example, such a silicon-dominated reaction peak may be generated closer to the left side of the graph 500 (i.e., closer to a capacity value of 0) in a cell with a better impregnation state.

[0077] FIG. 6 is a diagram illustrating an example of the charge amount of a negative electrode as a function of the C-rate of charge according to an embodiment of the present disclosure. A first graph 610 shows the change in the charge amount of graphite (or Gr) and the charge amount of silicon (or Si) as a function of the C-rate of charge of a negative electrode half-cell. Referring to the first graph 610, it can be seen that as the C-rate of charge increases, the charge amount of graphite decreases due to overpotential. This overpotential may be related to the internal resistance of the negative electrode. As a result, as the C-rate of charge increases, the ratio of the charge amount of silicon to the charge amount of graphite may increase.

[0078] A second graph 620 shows the change in differential voltage of the negative electrode half-cell depending on the charge and charge C-rate. Here, the differential voltage value of the negative electrode half-cell can be expressed as a positive number. A specific region 622 of the second graph 620 shows the change in differential voltage of the negative electrode half-cell at a specific state of charge (e.g., SOC 85% or higher). Referring to the second graph 620, it can be seen that in the specific region 622, the absolute value of the differential voltage of the negative electrode half-cell decreases as the charge C-rate increases. That is, as the charge C-rate increases, the charge amount of the graphite decreases due to the internal resistance of the negative electrode. Therefore, in the specific region 622, the absolute value of the differential voltage of the negative electrode half-cell may decrease due to an increase in the ratio of the silicon charge. For example, in the specific region 622, the absolute value of the differential voltage of the negative electrode half-cell charged at a C-rate of 0.4 C may be lower than the absolute value of the differential voltage of the negative electrode half-cell charged at a C-rate of 0.2 C.

[0079] FIG. 7 is a diagram illustrating an example of a graph 700 showing the change in differential voltage depending on the electrolyte content, according to an embodiment of the present disclosure. Graph 700 illustrates the change in differential voltage depending on the charge and electrolyte content of a full cell. Here, the differential voltage value of the negative electrode of the full cell can be expressed as a negative number. A specific region 710 of graph 700 represents the change in differential voltage at a specific state of charge (SOC) of the full cell (e.g., SOC 85% or higher). Referring to graph 700, it can be seen that in the specific region 710, the absolute value of the differential voltage of a full cell with a low electrolyte content is lower than that of a full cell with a high electrolyte content. A low electrolyte content can increase the resistance of the negative electrode or cause uneven electrolyte impregnation. This can result in a low charge capacity of the graphite, and the absolute value of the differential voltage of the full cell can decrease in the specific region 710 due to an increase in the proportion of silicon charge capacity. For example, in a particular region 710, the absolute value of the differential voltage of a full cell with an electrolyte content of 75% may be lower than the absolute value of the differential voltage of a full cell with an electrolyte content of 86%.

[0080] FIG. 8 is a diagram illustrating an example of the change in the charge capacity of silicon depending on the electrolyte content according to an embodiment of the present disclosure. A first graph 810 shows the change in the ratio of the charge capacity of silicon to the total charge capacity depending on the charge C rate and the electrolyte content. Referring to the first graph 810, it can be seen that the ratio of the charge capacity of silicon to the total charge capacity of the cell increases as the charge C rate increases. Furthermore, even when cells are charged at the same charge C rate, it can be seen that the ratio of the charge capacity of silicon to the total charge capacity increases for cells with a lower electrolyte content due to differences in the C rate characteristics of the graphite contained in the negative electrode. In other words, if the electrolyte impregnation state of the negative electrode is poor, the ratio of the charge capacity of silicon to the total charge capacity of the cell may increase.

[0081] The second graph 820 shows the correlation between a charge parameter (or deg-SC@EOC) associated with silicon in the negative electrode at a specific state of charge (e.g., SOC 85% or higher) of the cell and the ratio of the charge capacity of the silicon (or the ratio of the charge capacity of the silicon to the total charge capacity). Here, the charge parameter associated with silicon may be associated with the impregnation state of the electrolyte in the negative electrode. The charge parameter associated with silicon may be determined based on the difference between a predetermined reference value and the differential voltage value of the negative electrode within a predetermined range of the state of charge of the cell. The predetermined reference value may be, but is not limited to, the differential voltage value of a cell with an SOC of 85% and an electrolyte content of 86%, and may be the differential voltage value at which a change occurs. Specifically, the charge parameter associated with silicon may be calculated as the average difference between the differential voltage value of the negative electrode within a predetermined range of the state of charge of the cell and the predetermined reference value. Referring to the second graph 820, it can be seen that the charge parameter value associated with silicon is proportional to the charge rate of silicon and the overvoltage of the cell (i.e., the resistance of the cell). For example, an increase in the charge parameter value associated with silicon may indicate an increase in the charge rate of silicon and the overvoltage of the cell. Conversely, an increase in the overvoltage of the cell or an increase in the charge rate of silicon may indicate an increase in the charge parameter value associated with silicon.

[0082] FIG. 9 illustrates an example of a method for detecting a defective cell according to an embodiment of the present disclosure. Graph 900 shows the capacity retention of a cell as a function of electrolyte content and a charge parameter (or deg-SC@EOC) related to silicon. Referring to graph 900, the lower the electrolyte content of a cell, the lower the capacity retention of the cell. Furthermore, the lower the electrolyte content of a cell, the higher the value of the charge parameter related to silicon. In other words, the poorer the electrolyte impregnation state of the negative electrode, the higher the value of the charge parameter related to silicon.

[0083] In one embodiment, a cell may be determined to be defective based on a silicon-related charging parameter and a predetermined threshold value. Here, the predetermined threshold value may be determined based on a capacity retention rate depending on the electrolyte content. Specifically, a trend line 910 representing the relationship between the capacity retention rate depending on the electrolyte content and the silicon-related charging parameter may be estimated. A linear regression algorithm may be used to estimate the trend line 910, but is not limited to this. Furthermore, a capacity retention rate specification 920 serving as a reference for a normal cell may be determined in advance. At this point where the trend line 910 and the capacity retention rate specification 920 intersect, a threshold value 930 for the silicon-related charging parameter may be determined. Thus, a cell having a silicon-related charging parameter value exceeding the threshold value 930 may be determined to be a defective cell.

[0084] 10 illustrates an example of a method for detecting a defective cell according to an embodiment of the present disclosure. In one embodiment, the method for detecting a defective cell begins by performing an activation process on a cell using activation equipment (S1010). Furthermore, charging of the cell can proceed based on a predetermined cell state of charge range (e.g., SOC 85% or higher) (S1020). At this time, a processor (e.g., 334 in FIG. 3 ) can acquire first charging data including differential voltage information of the cell's negative electrode during cell charging. Here, the negative electrode can include graphite and silicon.

[0085] The processor can then calculate a charging parameter associated with silicon in the negative electrode based on the first charging data (S1030). Here, the charging parameter associated with silicon can be associated with the impregnation state of the electrolyte in the negative electrode. The charging parameter associated with silicon can also be determined based on a difference between a predetermined reference value and a differential voltage value of the negative electrode over a predetermined range of cell states of charge.

[0086] Next, the processor can determine whether the cell is defective based on the silicon-related charging parameter value and a predetermined threshold (S1040). Specifically, the processor can compare the silicon-related charging parameter value with a predetermined threshold. Here, the predetermined threshold can be determined based on the capacity retention rate depending on the electrolyte content. If the silicon-related charging parameter value of the cell is lower than the predetermined threshold, the processor can determine that the cell is a normal cell (S1050). At this time, information indicating that the cell is a normal cell can be output on a display.

[0087] If the charge parameter value associated with the silicon of the cell is higher than the predetermined threshold, the processor may determine whether the cell has been determined to be defective more than twice (S1060). If the cell has been determined to be defective the first time, a reactivation process may be performed on the cell to stabilize the defective cell (S1010). For example, the reactivation process may be performed using an activation process device. Then, as described above, the cell that has undergone the reactivation process may be charged based on a predetermined range (S1020). The processor may also obtain second charge data for the cell and recalculate the charge parameter associated with the silicon based on the second charge data (S1030). The processor may then re-determine whether the cell is defective by comparing the recalculated charge parameter value associated with the silicon with a predetermined threshold (S1040).

[0088] If the cell is still defective, the processor may determine that the cell is defective because the determination count is second (S1070). In response to the cell being determined to be defective (e.g., a final defective determination), the processor may output information related to the cell. Here, the information related to the cell may include, but is not limited to, cell identification information, cell location information, cell voltage information, cell differential voltage information, silicon-related charging parameters, etc.

[0089] This configuration allows for non-destructive detection of defective cells. Furthermore, the reactivation process for defective cells improves electrolyte impregnation and stabilizes defective negative electrode active material, allowing cells that do not improve even after the reactivation process to be treated as defective. This improves the reliability of defective cell detection.

[0090] 11 is a flowchart illustrating an example of a method 1100 for detecting a faulty cell according to an embodiment of the present disclosure. In one embodiment, the method 1100 for detecting a faulty cell can be performed by at least one processor. The method 1100 for detecting a faulty cell can begin by the processor charging a cell so that the cell's State of Charge (SOC) falls within a predetermined range (S1110). Here, the predetermined range can be 85% SOC or greater. Also, the C-rate during the charging of the cell can be higher than a predetermined threshold.

[0091] The processor may then acquire first charging data (S1120) including differential voltage information of the negative electrode of the cell during the charging of the cell, where the negative electrode may include graphite and silicon.

[0092] The processor can then calculate a charge parameter associated with silicon in the negative electrode based on the first charge data (S1130). Here, the charge parameter associated with silicon can be associated with the impregnation state of the electrolyte in the negative electrode. The charge parameter associated with silicon can also be determined based on a difference between a predetermined reference value and a differential voltage value of the negative electrode over a predetermined range of cell states of charge.

[0093] Next, the processor may determine whether the cell is defective based on the charging parameters associated with the silicon (S1140). Specifically, the processor may determine whether the cell is defective based on the charging parameters associated with the silicon and a predetermined threshold. Here, the predetermined threshold may be determined based on a capacity retention rate depending on the content of the electrolyte. Furthermore, the processor may output information associated with the cell in response to determining that the cell is defective.

[0094] In one embodiment, the cell may be a cell that has undergone an activation process. In this case, the processor may perform a reactivation process on the cell in response to determining that the cell is defective. The processor may also acquire second charge data after performing the reactivation process on the cell. The processor may then determine whether the cell is defective based on the second charge data.

[0095] The above-described method may be provided as a computer program stored on a computer-readable recording medium for execution by a computer. The medium may continuously store a computer-executable program or temporarily store it for execution or download. The medium may also be various recording or storage means in the form of a single piece of hardware or multiple pieces of hardware combined together. The medium is not limited to media directly connected to a computer system but may also be distributed over a network. Examples of media include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical recording media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and ROMs, RAMs, flash memories, and other media configured to store program instructions. Other examples of media include recording or storage media managed by app stores that distribute applications and other sites or servers that provide or distribute various software.

[0096] The methods, operations, or techniques of the present disclosure can be implemented by a variety of means. For example, such techniques can be embodied in hardware, firmware, software, or a combination thereof. Those skilled in the art will appreciate that the various exemplary logical blocks, modules, circuits, and algorithm steps described in this disclosure can be embodied in electronic hardware, computer software, or a combination of both. To clearly illustrate this interchange between hardware and software, the various exemplary components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is embodied as hardware or software will vary depending on the particular application and design requirements imposed on the overall system. Those skilled in the art may implement the described functionality in various ways for each particular application, but such implementations should not be interpreted as departing from the scope of the present disclosure.

[0097] In a hardware implementation, the processing units utilized to perform the techniques may be embodied within one or more ASICs, DSPs, GPUs, digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, electronic devices, other electronic units designed to perform the functions described in this disclosure, computers, or combinations thereof.

[0098] Accordingly, the various exemplary logic blocks, modules, and circuits described in this disclosure may be embodied or performed by any combination of general purpose processors, DSPs, ASICs, FPGAs or other programmable logic devices, discrete gate and transistor logic, discrete hardware components, or any combination designed to perform the functions described herein. A general purpose processor may be a microprocessor, but alternatively, the processor may be any conventional processor, controller, microcontroller, or state machine. A processor may also be embodied as a combination of computing devices, such as a DSP and a microprocessor, multiple microprocessors, one or more microprocessors in conjunction with a DSP core, or any other configuration.

[0099] In a firmware and / or software implementation, the techniques may be embodied as instructions stored on a computer-readable medium such as random access memory (RAM), read-only memory (ROM), non-volatile random access memory (NVRAM), programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), flash memory, compact disc (CD), magnetic or optical data storage device, etc. The instructions may be executable by one or more processors to cause the processors to perform particular aspects of the functions described in this disclosure.

[0100] If embodied as software, the techniques can be stored on or transmitted via a computer-readable medium as one or more instructions or code. Computer-readable media includes any medium that facilitates transfer of a computer program from one place to another, including both computer storage media and communication media. Storage media can be any available medium that can be accessed by a computer. By way of non-limiting example, such computer-readable media can include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to transport or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Also, any connection can be properly termed a computer-readable medium.

[0101] For example, if software is transferred from a website, server, or other remote source using coaxial cable, fiber optic cable, lead wire, Digital Subscriber Line (DSL), or wireless technologies such as infrared, radio, and microwave, the coaxial cable, fiber optic cable, lead wire, Digital Subscriber Line, or wireless technologies such as infrared, radio, and microwave are included within the definition of medium. As used herein, "disk" and "disc" include CDs, laser discs, optical discs, digital versatile discs (DVDs), floppy disks, and Blu-ray discs, where disks typically reproduce data magnetically while discs reproduce data optically using lasers. Combinations of the above should also be included within the scope of computer-readable medium.

[0102] A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium may be coupled to the processor such that the processor reads information from, and writes information to, the storage medium. Alternatively, the storage medium may be integral to the processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. Alternatively, the processor and the storage medium may reside as discrete components in a user terminal.

[0103] Although the above-described embodiments are described as utilizing aspects of the presently disclosed subject matter on one or more stand-alone computer systems, the present disclosure is not limited thereto and may be implemented in any computing environment, such as a network or distributed computing environment. Furthermore, aspects of the subject matter in the present disclosure may be implemented on multiple processing chips or devices, and storage may be shared across multiple devices. Such devices may include PCs, network servers, and handheld devices.

[0104] Although the present invention has been described above using limited examples and drawings, it is not limited thereto, and it goes without saying that various modifications and variations can be made by a person having ordinary knowledge in the technical field to which the present invention pertains within the technical spirit of the present invention and the equivalent scope of the claims. [Explanation of symbols]

[0105] 110 cells 120 charger 130 sensors 140 negative electrode 142 Silicon 144 Graphite

Claims

1. proceeding with charging the cell so that the cell's state of charge (SOC) falls within a predetermined range; acquiring first charging data including differential voltage information of a negative electrode of the cell while charging the cell, the negative electrode including graphite and silicon; calculating a charging parameter associated with silicon in the negative electrode based on the first charging data; and determining whether the cell is defective based on a charge parameter associated with the silicon.

2. 2. The method of claim 1, further comprising the step of outputting information associated with the cell in response to the cell being determined to be defective.

3. 2. The method of claim 1, wherein the charging parameter associated with silicon is associated with the impregnation state of the negative electrode with an electrolyte.

4. The method of claim 1 , wherein a C rate during the charging of the cell is higher than a predetermined threshold.

5. The defective cell detection method according to claim 1 , wherein the predetermined range is an SOC of 85% or more.

6. 2. The method of claim 1, wherein the silicon-related charge parameter is determined based on a difference between a predetermined reference value and a differential voltage value of the negative electrode over a predetermined range of cell states of charge.

7. 2. The method of claim 1, wherein the silicon-related charge parameter comprises a silicon-dominated response peak.

8. determining whether the cell is defective includes determining whether the cell is defective based on a charge parameter associated with the silicon and a predetermined threshold; The defective cell detection method according to claim 6 , wherein the predetermined threshold value is determined based on a capacity maintenance rate depending on the content of the electrolyte.

9. 2. The method of claim 1, wherein the cells are cells that have undergone an activation process.

10. 10. The method of claim 9, further comprising the step of: in response to determining that the cell is defective, proceeding with a reactivation process for the cell.

11. acquiring second charge data after performing a reactivation step on the cell; The defective cell detection method according to claim 10 , further comprising: determining whether or not the cell is defective based on the second charge data.

12. a communication module; Memory and at least one processor coupled to the memory and configured to execute at least one computer-readable program contained in the memory; The at least one program Charging the cell so that the cell's state of charge (SOC) falls within a predetermined range; acquiring first charging data including differential voltage information of a negative electrode of the cell while charging the cell, wherein the negative electrode includes graphite and silicon; calculating charging parameters associated with silicon in the negative electrode based on the first charging data; A faulty cell detection system including instructions for determining whether the cell is faulty based on a charge parameter associated with the silicon.

13. 13. The system of claim 12, wherein the at least one program further comprises instructions for outputting information associated with the cell in response to the cell being determined to be defective.

14. 13. The defective cell detection system of claim 12, wherein the silicon-related charging parameter is related to the impregnation state of the negative electrode with an electrolyte.

15. 13. The system of claim 12, wherein a C-rate during the ongoing charging of the cell is higher than a predetermined threshold.

16. The defective cell detection system of claim 12 , wherein the predetermined range is 85% SOC or greater.

17. 13. The defective cell detection system of claim 12, wherein the silicon-related charge parameter is determined based on a difference between a predetermined reference value and a differential voltage value of the negative electrode over a predetermined range of cell states of charge.

18. Determining whether the cell is defective includes determining whether the cell is defective based on a charge parameter associated with the silicon and a predetermined threshold; The defective cell detection system according to claim 17 , wherein the predetermined threshold value is determined based on a capacity maintenance rate depending on the content of the electrolyte.

19. The cell has undergone an activation process, 13. The system of claim 12, wherein the at least one program further includes instructions for performing a reactivation process for the cell in response to the cell being determined to be defective.

20. The at least one program acquiring second charge data after performing the cell reactivation step; The defective cell detection system of claim 19 , further comprising a command for determining whether the cell is defective based on the second charging data.

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