Light emitting device and method for manufacturing light emitting device

Abstract

To provide a light emitting device capable of enhancing luminance, and a method of manufacturing the light emitting device.SOLUTION: The light emitting device includes a light emitting element and a light-transmissive member. The light-transmissive member is disposed on the light emitting element. The light emitting element has a first upper surface, a first lower surface, and first lateral surfaces. The first side surface connects the first upper surface and the first lower surface. The light-transmissive member has a second upper surface, a second lower surface, and a second lateral surface. The second side surface connects the second upper surface and the second lower surface. The second side surface has a first region. The first region is inclined toward the center of the second lower surface as it goes downward. The first region is a flat surface or a curved surface. In a top view, the outer peripheral edge of the second side surface overlaps the outer peripheral edge of the first side surface. In a top view, an outer peripheral edge of the second lower surface overlaps a lower end of the first region.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The embodiments relate to a light emitting device and a method for manufacturing a light emitting device. [Background technology]

[0002] Light emitting devices in which a light-transmitting member is disposed on a light emitting element are known (for example, Patent Document 1). In such light emitting devices, there is a demand for increasing the brightness. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-188180 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments is to provide a light emitting device capable of increasing brightness and a method for manufacturing the light emitting device. [Means for solving the problem]

[0005] A light emitting device according to one embodiment of the present invention includes a light emitting element and a translucent member. The translucent member is disposed on the light emitting element. The light emitting element has a first upper surface, a first lower surface, and a first side surface. The first side surface connects the first upper surface and the first lower surface. The translucent member has a second upper surface, a second lower surface, and a second side surface. The second side surface connects the second upper surface and the second lower surface. The second side surface has a first region. The first region slopes downward toward the center of the second lower surface. The first region is a flat or curved surface. In a top view, an outer peripheral edge of the second side surface overlaps with an outer peripheral edge of the first side surface. In a top view, an outer peripheral edge of the second lower surface overlaps with a lower end of the first region.

[0006] A method for manufacturing a light emitting device according to one embodiment of the present invention includes first to third steps. In the first step, a wafer and a light-transmitting substrate are prepared. The wafer includes a plurality of light emitting elements, and the wafer has a first main surface and a first back surface. The light-transmitting substrate has a second main surface and a second back surface. A slit is formed in the second back surface. In the second step, the second back surface is bonded to the first main surface to form a structure in which the light-transmitting substrate is bonded to the wafer. In the third step, the structure is divided at a position overlapping the slit, thereby singulating the wafer and the light-transmitting substrate together. In the first step, the light-transmitting substrate is prepared, in which the slit has an inclined surface that slopes so as to widen from the second main surface toward the second back surface. The inclined surface is flat or curved. In the third step, the light-transmitting substrate is divided so that a portion of the slit remains in the singulated light-transmitting substrate. [Effects of the Invention]

[0007] According to one embodiment of the present invention, it is possible to provide a light emitting device capable of increasing brightness and a method for manufacturing the light emitting device. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view illustrating a light emitting device according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 3 is an enlarged view of a region R1 shown in FIG. 2. [Figure 4] FIG. 3 is a cross-sectional view illustrating a part of a light emitting device according to a first modified example of the first embodiment. [Figure 5] FIG. 10 is a cross-sectional view illustrating a part of a light emitting device according to a second modified example of the first embodiment. [Figure 6] FIG. 10 is a cross-sectional view illustrating a part of a light emitting device according to a third modified example of the first embodiment. [Figure 7] FIG. 10 is a cross-sectional view illustrating light emission in a conventional light-emitting device. [Figure 8]2 is a cross-sectional view illustrating light emission in the light emitting device according to the first embodiment. FIG. [Figure 9] FIG. 10 is a plan view illustrating a light emitting device according to a second embodiment. [Figure 10] FIG. 4 is a cross-sectional view illustrating a light emitting device according to a second embodiment. [Figure 11] FIG. 10 is a plan view illustrating a light emitting device according to a third embodiment. [Figure 12] FIG. 10 is a cross-sectional view illustrating a light emitting device according to a third embodiment. [Figure 13] FIG. 10 is a plan view illustrating a light emitting device according to a fourth embodiment. [Figure 14] FIG. 10 is a cross-sectional view illustrating a light emitting device according to a fourth embodiment. [Figure 15] FIG. 10 is a plan view illustrating a light emitting device according to a fifth embodiment. [Figure 16] FIG. 10 is a cross-sectional view illustrating a light emitting device according to a fifth embodiment. [Figure 17] FIG. 10 is a plan view illustrating a light emitting device according to a sixth embodiment. [Figure 18] FIG. 10 is a cross-sectional view illustrating a light emitting device according to a sixth embodiment. [Figure 19] 3 is a cross-sectional view illustrating a first step in the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 20] 5A and 5B are cross-sectional views illustrating a second step in the method for manufacturing the light emitting device according to the first embodiment. [Figure 21] 5A and 5B are cross-sectional views illustrating a second step in the method for manufacturing the light emitting device according to the first embodiment. [Figure 22] 5A and 5B are cross-sectional views illustrating a second step in the method for manufacturing the light emitting device according to the first embodiment. [Figure 23] 5A and 5B are cross-sectional views illustrating a second step in the method for manufacturing the light emitting device according to the first embodiment. [Figure 24] 5A and 5B are cross-sectional views illustrating a third step in the method for manufacturing the light emitting device according to the first embodiment. [Figure 25] 5A and 5B are cross-sectional views illustrating a third step in the method for manufacturing the light emitting device according to the first embodiment. [Figure 26] 5A and 5B are cross-sectional views illustrating a fourth step in the method for manufacturing the light emitting device according to the first embodiment. [Figure 27] 5 is a cross-sectional view illustrating a fifth step in the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 28] 10 is a cross-sectional view illustrating a sixth step in the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 29] 10 is a cross-sectional view illustrating a sixth step in the method for manufacturing the light emitting device according to the first embodiment. FIG. [Figure 30] 3 is a plan view illustrating a light-transmitting substrate in the method for manufacturing the light-emitting device according to the first embodiment. FIG. [Figure 31] 3 is a perspective view illustrating a light-transmitting substrate in the method for manufacturing the light-emitting device according to the first embodiment. FIG. [Figure 32] 3 is a perspective view illustrating a part of a light-transmitting substrate in the method for manufacturing the light-emitting device according to the first embodiment. FIG. [Figure 33] FIG. 10 is a plan view illustrating a light-transmitting substrate in a method for manufacturing a light-emitting device according to a second embodiment. [Figure 34] FIG. 10 is a plan view illustrating a light-transmitting substrate in a manufacturing method for a light-emitting device according to a third embodiment. [Figure 35] FIG. 10 is a plan view illustrating a light-transmitting substrate in a method for manufacturing a light-emitting device according to a fourth embodiment. [Figure 36] FIG. 11 is a plan view illustrating a light-transmitting substrate in a method for manufacturing a light-emitting device according to a fifth embodiment. [Figure 37] FIG. 13 is a plan view illustrating a light-transmitting substrate in a manufacturing method for a light-emitting device according to a sixth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and each drawing, elements similar to those already explained are given the same reference numerals and detailed explanations are omitted as appropriate.

[0010] For ease of explanation, the following description will use an XYZ Cartesian coordinate system to explain the arrangement and configuration of each part. The X-axis, Y-axis, and Z-axis are perpendicular to one another. The direction in which the X-axis extends will be referred to as the "X direction," the direction in which the Y-axis extends will be referred to as the "Y direction," and the direction in which the Z-axis extends will be referred to as the "Z direction." For ease of explanation, the direction of the arrow in the Z direction will be referred to as upward and the opposite direction will be referred to as downward, but these directions are unrelated to the direction of gravity. Looking from above downward will be referred to as a "top view."

[0011] <Light-emitting device> (First embodiment) FIG. 1 is a plan view illustrating a light emitting device according to the first embodiment. FIG. 2 is a cross-sectional view taken along line II-II in FIG. FIG. 3 is an enlarged view of the region R1 shown in FIG. 1 to 3, the light emitting device 100 according to the first embodiment includes a light emitting element 10 and a light-transmitting member 20. The outer shape of the light emitting device 100 when viewed from above is rectangular. The outer shape of the light emitting device 100 when viewed from above may be, for example, a polygon other than a rectangle.

[0012] The light emitting element 10 has a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer, the active layer, and the n-type semiconductor layer are each made of, for example, a nitride semiconductor. In this specification, the term "nitride semiconductor" refers to, for example, In x Al y Ga 1-x-y The term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges. In addition, the term "nitride semiconductor" also includes semiconductors with the above chemical formula that further contain Group V elements other than N (nitrogen), and semiconductors that further contain various elements added to control various physical properties such as conductivity type.

[0013] The n-type semiconductor layer contains, for example, Si (silicon) as an n-type impurity. The p-type semiconductor layer contains, for example, Mg (magnesium) as a p-type impurity. The active layer is a light-emitting layer that emits light and has, for example, an MQW (multiple quantum well) structure including multiple barrier layers and multiple well layers. The active layer may also be an SQW (single quantum well) structure in which one well layer is sandwiched between two barrier layers.

[0014] The p-type semiconductor layer, active layer, and n-type semiconductor layer may be III-V group semiconductors other than nitride semiconductors. III-V group semiconductors may be, for example, GaAs, GaAsP, AlGaAs, AlGaInP, etc. These materials have a mixed crystal composition within a range that results in a direct transition semiconductor.

[0015] The light-emitting element 10 has a first upper surface 11, a first lower surface 12, and a first side surface 13. The first side surface 13 connects the first upper surface 11 and the first lower surface 12. In the light-emitting device 100, the first lower surface 12 is a surface parallel to the first upper surface 11. In the light-emitting device 100, the first upper surface 11 and the first lower surface 12 are planes along the XY plane. In the light-emitting device 100, the first side surface 13 is a plane perpendicular to the first upper surface 11 and the first lower surface 12. In the light-emitting device 100, the first side surface 13 is a plane along the Z direction (i.e., the up-down direction).

[0016] In the light emitting device 100, the outer shape of the light emitting element 10 in a top view is quadrilateral. The outer shape of the light emitting element 10 in a top view may be, for example, a polygon other than a quadrilateral. When the outer shape of the light emitting element 10 in a top view is quadrilateral, the quadrilateral may be not only a square but also a rectangle.

[0017] The light-transmitting member 20 is disposed on the light-emitting element 10. The light-transmitting member 20 transmits light emitted from the light-emitting element 10. The light-transmitting member 20 may include a wavelength conversion member. For example, the light-transmitting member 20 may include a phosphor. The light-transmitting member 20 may further include a light-transmitting material such as aluminum oxide or aluminum nitride. The phosphor includes, for example, at least one of an oxide phosphor, a nitride phosphor, and an oxynitride phosphor. The oxide phosphor may be, for example, an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce) and terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 Examples of nitride phosphors include LSN phosphors (e.g., (La,Y)3Si6N 11 Examples of oxynitride phosphors include β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu), α-sialon phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu), BSiON, etc. The light-transmitting member 20 is preferably a sintered body containing, for example, a YAG-based phosphor. The light-transmitting member 20 may be a sintered body of a composite material containing a phosphor and a light-transmitting material.

[0018] The light-transmitting member 20 has a second upper surface 21, a second lower surface 22, and a second side surface 23. The second side surface 23 connects the second upper surface 21 and the second lower surface 22. In the light-emitting device 100, the second lower surface 22 is a surface parallel to the second upper surface 21. In the light-emitting device 100, the second upper surface 21 and the second lower surface 22 are planes along the XY plane.

[0019] The second side surface 23 has a first region 23a. The first region 23a is inclined downward toward the center C of the second lower surface 22. The first region 23a is also inclined with respect to the first upper surface 11. The first region 23a is a flat surface or a curved surface. It is preferable that the first region 23a is a curved surface.

[0020] 3, in the light emitting device 100, the first region 23a is a curved surface. In the light emitting device 100, the first region 23a is a curved surface whose inclination angle with respect to the horizontal plane (i.e., the XY plane) increases from the top end to the bottom end. In other words, in the light emitting device 100, the first region 23a is a curved surface whose inclination angle with respect to the horizontal plane increases from the periphery to the center.

[0021] Furthermore, when the distance between a pair of opposing second side surfaces 23 is the width W of the light-transmitting member 20, the width W of the light-transmitting member 20 at the lower end of the first region 23a is smaller than the width W of the light-transmitting member 20 at the upper end of the first region 23a.

[0022] In the light emitting device 100, the second side surface 23 further includes a second region 23b. The second region 23b is connected to the first region 23a. The second region 23b is located higher than the first region 23a. The second region 23b is a plane extending along the Z direction (i.e., the up-down direction). In other words, the second region 23b is a plane perpendicular to the second upper surface 21 and the second lower surface 22. The second side surface 23 does not necessarily have to include the second region 23b. Furthermore, the second side surface 23 may be located higher than the second region 23b and may have a step portion recessed toward the center of the second upper surface 21.

[0023] In a top view, the outer peripheral edge 23e of the second side surface 23 overlaps with the outer peripheral edge 13e of the first side surface 13. The outer peripheral edge 23e of the second side surface 23 is the outermost portion of the second side surface 23 in a top view. In the light emitting device 100, the upper end of the first region 23a and the entire second region 23b of the second side surface 23 correspond to the outer peripheral edge 23e of the second side surface 23. The outer peripheral edge 13e of the first side surface 13 is the outermost portion of the first side surface 13 in a top view. In the light emitting device 100, the entire first side surface 13 corresponds to the outer peripheral edge 13e of the first side surface 13.

[0024] In a top view, outer peripheral edge 22e of second lower surface 22 overlaps with lower edge 23f of first region 23a. Outer peripheral edge 22e of second lower surface 22 is the outermost portion of second lower surface 22 in a top view. In light emitting device 100, first region 23a is connected to second lower surface 22. That is, in light emitting device 100, lower edge 23f of first region 23a coincides with outer peripheral edge 22e of second lower surface 22.

[0025] In the light-emitting device 100, the outer shape of the light-transmissive member 20 in a top view is a rectangle. More specifically, the outer shape of the light-transmissive member 20 in a top view is a rectangle having a first side 20a, a second side 20b, a third side 20c, and a fourth side 20d. The second side 20b connects one end of the first side 20a to one end of the third side 20c. The fourth side 20d connects the other end of the first side 20a to the other end of the third side 20c. In other words, the first side 20a and the third side 20c face each other, and the second side 20b and the fourth side 20d face each other. In the light-emitting device 100, the first side 20a and the third side 20c extend along the X direction, and the second side 20b and the fourth side 20d extend along the Y direction. The outer shape of the light-transmitting member 20 in top view may be, for example, a polygon other than a quadrangle. When the outer shape of the light-transmitting member 20 in top view is quadrangle, the quadrangle may be not only a square but also a rectangle.

[0026] In the light emitting device 100, the first region 23a extends along the first side 20a, the second side 20b, the third side 20c, and the fourth side 20d. That is, in the light emitting device 100, the first region 23a extends along each of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmissive member 20 in top view.

[0027] The light emitting device 100 further includes an adhesive 30, a light reflecting member 40, a substrate 50, and an electrode 60. Instead of using the adhesive 30, the light emitting element 10 and the light-transmitting member 20 may be directly bonded together without using the adhesive 30.

[0028] The adhesive 30 bonds the light-emitting element 10 and the light-transmitting member 20. The adhesive 30 is located between the light-emitting element 10 and the light-transmitting member 20 in the Z direction. More specifically, the adhesive 30 is located between the first upper surface 11 of the light-emitting element 10 and the second lower surface 22 of the light-transmitting member 20 in the Z direction. The adhesive 30 may be, for example, polysilazane, silicone resin, or epoxy resin. Among these resins, polysilazane has a high refractive index, which increases the light extraction efficiency.

[0029] The light-reflecting member 40 reflects light emitted from the light-emitting element 10 and light emitted from the light-emitting element 10 and transmitted through the light-transmitting member 20. The light-reflecting member 40 surrounds the light-emitting element 10 and the light-transmitting member 20. The light-reflecting member 40 contacts the first side surface 13 of the light-emitting element 10 and the second side surface 23 of the light-transmitting member 20. A portion of the light-reflecting member 40 is located between the first upper surface 11 and the first region 23a in the Z direction. The light-reflecting member 40 includes, for example, a resin and a light-reflecting material. The resin may be, for example, a thermosetting resin such as a silicone resin or an epoxy resin. The light-reflecting material may be, for example, particles made of an oxide such as titanium oxide, silicon oxide, or aluminum oxide, or metal particles such as aluminum. The light-reflecting member 40 may be made of ceramics made of an inorganic material instead of resin.

[0030] The substrate 50 is located below the light-emitting element 10. The substrate 50 is a wiring substrate and is electrically connected to the electrode 60. The substrate 50 is preferably made of ceramics having high heat resistance and thermal conductivity. The substrate 50 may be made of, for example, aluminum nitride, silicon nitride, or silicon carbide.

[0031] The electrode 60 is located between the substrate 50 and the first lower surface 12 of the light-emitting element 10 in the Z direction. The light-emitting element 10 is electrically connected to the substrate 50 via the electrode 60. The electrode 60 may be made of, for example, Au or an alloy thereof, eutectic solder (Au-Sn), or a conductive paste containing metal particles.

[0032] (First Modification) FIG. 4 is a cross-sectional view showing a part of a light emitting device according to a first modification of the first embodiment. As shown in Fig. 4, the first region 23a may be a curved surface whose inclination angle with respect to the horizontal plane decreases from the top to the bottom. In other words, the first region 23a may be a curved surface whose inclination angle with respect to the horizontal plane decreases from the periphery to the center. Furthermore, the first region 23a may include both the curved surface shown in Fig. 3 and the curved surface shown in Fig. 4.

[0033] (Second Modification) FIG. 5 is a cross-sectional view showing a part of a light emitting device according to a second modification of the first embodiment. As shown in FIG. 5, the first region 23a may be a plane having a constant inclination angle with respect to the horizontal plane.

[0034] (Third Modification) FIG. 6 is a cross-sectional view showing a part of a light emitting device according to a third modified example of the first embodiment. As shown in FIG. 6, the first region 23a may not be connected to the second lower surface 22. The second side surface 23 may further include a third region 23c. The third region 23c is connected to the first region 23a. The third region 23c is located lower than the first region 23a. The third region 23c is a plane extending along the Z direction. That is, the third region 23c is a plane perpendicular to the second upper surface 21 and the second lower surface 22. The first region 23a may have any of the shapes described above. In the third modified example, the lower end 23f of the first region 23a is located above the outer peripheral edge 22e of the second lower surface 22. In a top view, the outer peripheral edge 22e of the second lower surface 22 overlaps the lower end 23f of the first region 23a.

[0035] The effects of the light emitting device according to the first embodiment will be described below. FIG. 7 is a cross-sectional view showing light emission in a conventional light emitting device. FIG. 8 is a cross-sectional view illustrating light emission in the light emitting device according to the first embodiment. 7 and 8, the direction in which light is emitted is indicated by an arrow. 7, in a conventional light-emitting device, the second side surface 23 of the light-transmitting member 20 does not have the first region 23a. The second side surface 23 faces the X direction and extends upward (i.e., in the Z direction). Therefore, light emitted obliquely upward from the light-emitting element 10 is less likely to be extracted upward and is more likely to be emitted laterally from the second side surface 23. Therefore, the light distribution angle θ in the cross-sectional view shown in FIG. 7 is likely to be large (for example, about 120°), and the proportion of light emitted upward from the second upper surface 21 of the light-transmitting member 20 is small, which tends to result in low brightness.

[0036] In contrast, as shown in FIG. 8 , in the light-emitting device 100 according to the first embodiment, the second side surface 23 of the light-transmitting member 20 has a first region 23a facing upward, which allows light emitted obliquely upward from the light-emitting element 10 to be reflected upward by the first region 23a. This makes it difficult for light emitted obliquely upward from the light-emitting element 10 to exit laterally from the second side surface 23, and the light distribution angle θ in the cross-sectional view shown in FIG. 8 can be made smaller (for example, approximately 105° to 115°) than in conventional light-emitting devices. This increases the proportion of light emitted upward from the second upper surface 21 of the light-transmitting member 20, thereby increasing brightness. Furthermore, the outer peripheral edge 23e of the second side surface 23 overlaps with the outer peripheral edge 13e of the first side surface 13 in a top view, allowing the light-emitting element 10 and the light-transmitting member 20 to be the same size in a top view. As a result, the light emitting element 10 does not become larger than the light-transmitting member 20 in top view, and it is possible to reduce the amount of light emitted upward from the light emitting element 10 that is emitted from the upper surface of the light emitting device 100 without passing through the light-transmitting member 20. Furthermore, since the light emitting element 10 does not become smaller than the light-transmitting member 20 in top view, the brightness of the outer peripheral portion of the light-transmitting member 20 is less likely to decrease. Furthermore, since the outer peripheral edge 22e of the second lower surface 22 overlaps with the lower end 23f of the first region 23a in top view, the light emitted from the light emitting element 10 can be made to enter the light-transmitting member 20 efficiently.

[0037] Furthermore, in the light emitting device 100, the second side surface 23 of the light-transmitting member 20 further includes the second region 23b, so that light emitted obliquely upward from the light emitting element 10 can be reflected by the second region 23b toward the center in a top view. This increases the proportion of light that is emitted upward from near the center of the second upper surface 21 of the light-transmitting member 20, thereby increasing the brightness of the center. This therefore improves the efficiency of incidence on a secondary optical system that may be arranged downstream of the light emitting device 100.

[0038] Furthermore, in the light emitting device 100, the first region 23a is curved, which makes it easier to reflect upward light emitted obliquely upward from the light emitting element 10 in the first region 23a. This further increases the proportion of light that is emitted upward from the second upper surface 21 of the light-transmitting member 20, thereby further increasing the brightness.

[0039] Furthermore, in the light-emitting device 100, the first region 23a extends along each of the four sides of the outer shape (i.e., quadrangle) of the light-transmitting member 20 in a top view, so that light emitted from the light-emitting element 10 toward each side can be reflected upward in the first region 23a. This further increases the proportion of light emitted upward from the second upper surface 21 of the light-transmitting member 20, thereby further increasing brightness. The light-emitting device 100 can efficiently narrow the light distribution angles in the X and Y directions compared to the conventional light-emitting device shown in FIG. 7. This therefore increases the incidence efficiency of light on a secondary optical system that may be disposed downstream of the light-emitting device 100. For example, the light-emitting device 100 may be used in a vehicle lamp to form a low beam or high beam light distribution.

[0040] Furthermore, in the light emitting device 100, the light-transmitting member 20 contains a phosphor, so that both the light (excitation light) emitted from the light emitting element 10 and the light whose wavelength has been converted by the phosphor can be extracted efficiently.

[0041] Furthermore, in the light emitting device 100, the phosphor contains at least one of an oxide phosphor, a nitride phosphor, and an oxynitride phosphor, so that light of a desired color can be obtained by mixing the light emitted from the light emitting element 10 (excitation light) and the light whose wavelength has been converted by the phosphor. The light emitting device 100 emits, for example, white light by mixing the excitation light and the wavelength-converted light. The color temperature (including the correlated color temperature) of the white light is, for example, 3000 K or more and 7000 K or less.

[0042] Furthermore, in the light emitting device 100, the light reflecting member 40 is in contact with the first side surface 13 and the second side surface 23 and is located between the first upper surface 11 and the first region 23a in the up-down direction, which makes it easier to reflect light emitted obliquely upward from the light emitting element 10 upward in the first region 23a (i.e., the interface between the light-transmitting member 20 and the light reflecting member 40). This further increases the proportion of light that is emitted upward from the second upper surface 21 of the light-transmitting member 20, thereby further increasing the brightness.

[0043] The light emitting devices described using the second to sixth embodiments are examples in which the first region 23a is provided on a predetermined side or a predetermined corner of the outer shape of the light emitting device when viewed from above. This makes it possible to make the light distribution angle in the direction from the center of the light emitting device toward the first region 23a smaller than the light distribution angle in the direction from the center of the light emitting device toward a side where the first region 23a is not provided. In this way, by providing the first region 23a on a side or corner corresponding to a specific direction in which it is desired to narrow the light distribution, it is possible to efficiently narrow the light distribution in that direction. Each example will be described below.

[0044] (Second embodiment) FIG. 9 is a plan view illustrating a light emitting device according to the second embodiment. FIG. 10 is a cross-sectional view illustrating a light emitting device according to the second embodiment. FIG. 10 shows a cross section taken along line XX shown in FIG. As shown in Figures 9 and 10, the light emitting device 100A according to the second embodiment is substantially the same as the light emitting device 100 according to the first embodiment, except that the shape of the first region 23a of the light-transmissive member 20 is different.

[0045] In the light emitting device 100A, the first region 23a extends along the first side 20a, the second side 20b, and the third side 20c of the outer shape (i.e., quadrangle) of the light-transmitting member 20 in a top view. That is, in the light emitting device 100A, the first region 23a extends along three of the four sides (i.e., the first side 20a to the fourth side 20d) of the outer shape (i.e., quadrangle) of the light-transmitting member 20 in a top view.

[0046] In the light emitting device 100A, the second side surface 23 of the light-transmitting member 20 has the first region 23a, which increases the proportion of light that exits upward from the second upper surface 21 of the light-transmitting member 20, thereby increasing brightness.

[0047] Furthermore, in the light emitting device 100A, the first region 23a extends along three sides, so that the light distribution angle in the direction where the first region 23a is provided can be made smaller than the light distribution angle in the direction where the first region 23a is not provided (i.e., the -X direction). As a result, when the light emitting device 100A is turned on, light is spread in the -X direction, improving visibility from the -X direction. This light emitting device 100A is preferably applied to lighting fixtures and outdoor displays. By eliminating or reducing the size of the shading louvers provided in lighting fixtures and outdoor displays, the cost of the outdoor display can be reduced.

[0048] (Third embodiment) FIG. 11 is a plan view illustrating a light emitting device according to the third embodiment. FIG. 12 is a cross-sectional view illustrating a light emitting device according to the third embodiment. FIG. 12 shows a cross section taken along line XII-XII shown in FIG. As shown in Figures 11 and 12, the light emitting device 100B according to the third embodiment is substantially the same as the light emitting device 100 according to the first embodiment, except that the shape of the first region 23a of the light-transmissive member 20 is different.

[0049] In the light emitting device 100B, the first region 23a extends along the second side 20b and the fourth side 20d of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view. That is, in the light emitting device 100B, the first region 23a extends along two opposing sides of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view.

[0050] In the light emitting device 100B, the second side surface 23 of the light-transmitting member 20 has the first region 23a, which increases the proportion of light that exits upward from the second upper surface 21 of the light-transmitting member 20, thereby increasing brightness.

[0051] Furthermore, in the light emitting device 100B, the first region 23a extends along two opposing sides, thereby efficiently narrowing the light distribution angle in the X direction. Therefore, the light distribution angle in the X direction can be relatively narrowed, and the light distribution angle in the Y direction perpendicular to the X direction can be relatively widened. This increases the efficiency of incidence of light in the X direction on a secondary optical system that may be disposed downstream of the light emitting device 100B. For example, the light emitting device 100B may be used in a vehicle lamp to form a low-beam light distribution.

[0052] In a top view, the outer shape of the light-emitting element 10 and the outer shape of the light-transmitting member 20 may be a rectangle with a longer side in the Y direction and a shorter side in the X direction. This allows the aspect ratio of the first upper surface 11 of the light-emitting element 10 and the aspect ratio of the second upper surface 21 of the light-transmitting member 20 to make the light distribution angle in the X direction narrower than the light distribution angle in the Y direction. The effects of the aspect ratio, combined with the effects of the first region 23a, allow the light distribution angle in the X direction to be narrower than the light distribution angle in the Y direction.

[0053] (Fourth embodiment) FIG. 13 is a plan view illustrating a light emitting device according to the fourth embodiment. FIG. 14 is a cross-sectional view illustrating a light emitting device according to the fourth embodiment. FIG. 14 shows a cross section taken along line XIV-XIV shown in FIG. As shown in Figures 13 and 14, the light emitting device 100C according to the fourth embodiment is substantially the same as the light emitting device 100 according to the first embodiment, except that the shape of the first region 23a of the light-transmissive member 20 is different.

[0054] In the light emitting device 100C, the first region 23a extends along the first side 20a and the second side 20b of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view. That is, in the light emitting device 100C, the first region 23a extends along two adjacent sides of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view.

[0055] In the light emitting device 100C, the second side surface 23 of the light-transmitting member 20 has the first region 23a, which increases the proportion of light that exits upward from the second upper surface 21 of the light-transmitting member 20, thereby increasing brightness.

[0056] Furthermore, in the light emitting device 100C, the first region 23a extends along two adjacent sides, thereby obtaining emitted light with an L-shaped luminance distribution. Therefore, the cost of the lighting fixture or outdoor display can be reduced by simply changing the height of the light blocking louvers in the lighting fixture or outdoor display, for example by lowering the louvers.

[0057] (Fifth embodiment) FIG. 15 is a plan view illustrating a light emitting device according to a fifth embodiment. FIG. 16 is a cross-sectional view illustrating a light emitting device according to the fifth embodiment. FIG. 16 shows a cross section taken along line XVI-XVI shown in FIG. As shown in FIGS. 15 and 16, the light emitting device 100D according to the fifth embodiment is substantially the same as the light emitting device 100 according to the first embodiment, except that the shape of the first region 23a of the light-transmissive member 20 is different.

[0058] In the light emitting device 100D, the first region 23a extends along the second side 20b of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view. That is, in the light emitting device 100D, the first region 23a extends along one of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view.

[0059] In the light emitting device 100D, the second side surface 23 of the light-transmitting member 20 also has the first region 23a, which increases the proportion of light that exits upward from the second upper surface 21 of the light-transmitting member 20, thereby increasing brightness.

[0060] Furthermore, in the light emitting device 100D, the first region 23a extends along one side, which increases the difference in brightness between the side on which the first region 23a is formed and the side on which the first region 23a is not formed, thereby producing an illuminated image with contrast.

[0061] (Sixth embodiment) FIG. 17 is a plan view illustrating a light emitting device according to the sixth embodiment. FIG. 18 is a cross-sectional view illustrating a light emitting device according to the sixth embodiment. FIG. 18 shows a cross section taken along line XVIII-XVIII shown in FIG. As shown in Figures 17 and 18, the light emitting device 100E according to the sixth embodiment is substantially the same as the light emitting device 100 according to the first embodiment, except that the shape of the first region 23a of the light-transmissive member 20 is different.

[0062] In the light emitting device 100E, the first regions 23a are arranged at the four corners where the four sides (first side 20a to fourth side 20d) of the outline (rectangle) of the light-transmissive member 20 intersect when viewed from above.

[0063] In the light emitting device 100E, the second side surface 23 of the light-transmitting member 20 also has the first region 23a, which increases the proportion of light that exits upward from the second upper surface 21 of the light-transmitting member 20, thereby increasing brightness.

[0064] Furthermore, in the light emitting device 100E, the first regions 23a are arranged at the four corners, thereby making it possible to reduce the light distribution angle in the directions shifted by 45° from each of the X direction and the Y direction.

[0065] <Method of manufacturing a light-emitting device> (First embodiment) FIG. 19 is a cross-sectional view showing a first step of the method for manufacturing the light emitting device according to the first embodiment. 20 to 23 are cross-sectional views illustrating a second step of the method for manufacturing the light emitting device according to the first embodiment. 24 and 25 are cross-sectional views showing a third step of the method for manufacturing the light emitting device according to the first embodiment. FIG. 26 is a cross-sectional view showing a fourth step of the method for manufacturing the light emitting device according to the first embodiment. FIG. 27 is a cross-sectional view illustrating a fifth step of the method for manufacturing the light emitting device according to the first embodiment. 28 and 29 are cross-sectional views illustrating a sixth step of the method for manufacturing the light emitting device according to the first embodiment. 19 to 29 are cross-sectional views perpendicular to the light-emitting surface of the light-emitting device. The cross-sectional direction of Fig. 19 to 29 corresponds to the cross-sectional direction at the position of line II-II shown in Fig. 1, for example. 19 to 29, the method for manufacturing the light emitting device according to the first embodiment includes steps 1 to 6. Steps 1 to 6 are performed in the order of step 1, step 2, step 3, step 4, step 5, and step 6.

[0066] As shown in FIG. 19, in the first step, a wafer 110 and a light-transmitting substrate 120 are prepared. The wafer 110 includes a plurality of light-emitting elements 10. The wafer 110 is divided into individual pieces to form the above-described light-emitting elements 10. The wafer 110 has a first main surface 110a and a first back surface 110b. The light-transmitting substrate 120 is divided into individual pieces to form the above-described light-transmitting members 20. The light-transmitting substrate 120 has a second main surface 120a and a second back surface 120b.

[0067] In the first step, a light-transmitting substrate 120 having a slit 121 formed on the second rear surface 120b is prepared. The slit 121 is formed by removing a part of the light-transmitting substrate 120 on the second rear surface 120b side using, for example, a dicing blade DB1.

[0068] The slit 121 has an inclined surface 121s that is inclined so as to widen as it goes from the second main surface 120a to the second back surface 120b. The inclined surface 121s is flat or curved. The inclined surface 121s corresponds to the first region 23a of the second side surface 23 of the light-transmitting member 20 described above. The width of the slit 121 is preferably 0.05 mm or more and 0.5 mm or less. Here, the width refers to the dimension of the widest part. The depth of the slit 121 is preferably 0.05 mm or more and 0.5 mm or less. Here, the depth refers to the dimension from the second back surface 120b to the deepest part of the slit 121. The slit 121 will be described later. When a low-refractive index member is placed in a position adjacent to the first region 23a, a material of the low-refractive index member is placed inside the slit 121. Furthermore, after the slits 121 are formed, the second main surface 120a may be polished so that the second regions 23b of the light-transmitting members 20 after singulation are thinner than before polishing.

[0069] As shown in FIGS. 20 to 23, in the second step, a structure 135 is formed. As shown in FIG. 20, in the second step, first, an adhesive layer 130 is formed on the first main surface 110a of the wafer 110. The adhesive layer 130 becomes the above-mentioned adhesive 30 when singulated. The adhesive layer 130 is formed by applying a material using, for example, a spin coater.

[0070] As shown in FIG. 21, in the second step, the wafer 110 having the adhesive layer 130 formed on the first main surface 110a is heated by a heater HT to volatilize the solvent contained in the adhesive layer 130. The heater HT is, for example, a hot plate. The heating conditions may be, for example, 80°C or higher and 200°C or lower. By performing this step, it is possible to reduce the amount of gas generated when the adhesive layer 130 is cured.

[0071] 22, in the second step, the second back surface 120b of the light-transmitting substrate 120 is bonded to the first main surface 110a of the wafer 110 via the adhesive layer 130. This forms a structure 135 in which the light-transmitting substrate 120 is bonded onto the wafer 110.

[0072] As shown in FIG. 23, in the second step, the structure 135 is heated and pressed by a press PR to harden the adhesive layer 130. The heating conditions may be 130° C. or higher and 200° C. or lower. The pressure conditions are 50 g / mm 2 More than 200g / mm 2 The heating and pressurization may be started at the same time, or one of them may be started first. The heating and pressurization may be finished at the same time, or one of them may be finished first. The heating time of the adhesive layer 130 in this step is set to be longer than the heating time when volatilizing the solvent from the adhesive layer 130 described with reference to FIG. 21.

[0073] As shown in FIGS. 24 and 25 , in the third step, the structure 135 is divided at positions overlapping the slits 121, thereby singulating the wafer 110, the light-transmitting substrate 120, and the adhesive layer 130 all at once. The structure 135 can be divided using, for example, a dicing blade DB2. The structure 135 is divided into individual structures 137. The individual structures 137 each include a light-emitting element 10 obtained by singulating the wafer 110, a light-transmitting member 20 obtained by singulating the light-transmitting substrate 120, and an adhesive 30 obtained by singulating the adhesive layer 130. Note that, before singulation, the second main surface 120a of the light-transmitting substrate 120 may be polished to make the second region 23b of the light-transmitting member 20 thinner after singulation than before polishing.

[0074] When dividing the structure 135, the division is performed so that a part of the slit 121 (i.e., the inclined surface 121s) remains in the light-transmitting substrate 120 (i.e., the light-transmitting member 20) after singulation. When dividing the structure 135, a part of the structure 135 may be lost by being scraped away at the division position. The part of the structure 135 that is lost when dividing the structure 135 is a so-called "cutting margin." For example, by making the width of the cutting margin smaller than the width of the slit 121, division can be performed so that a part of the slit 121 (i.e., the inclined surface 121s) remains in the light-transmitting substrate 120 (i.e., the light-transmitting member 20) after singulation.

[0075] 26, in the fourth step, a plurality of singulated structures 137 are placed on a mounting substrate 150 via electrodes 60. The singulated structures 137 are placed with the light-emitting elements 10 facing downwards. As a result, the light-emitting elements 10 are electrically connected to the mounting substrate 150 via the electrodes 60. Note that the mounting substrate 150 becomes the above-mentioned substrate 50 by being singulated.

[0076] 27, in the fifth step, a light reflecting layer 140 is formed around the plurality of singulated structures 137 on a mounting substrate 150, thereby forming a laminate 165. The light reflecting layer 140 becomes the above-mentioned light reflecting member 40 by being singulated. The light reflecting layer 140 is formed by, for example, potting, compression molding, or transfer molding.

[0077] 28 and 29 , in the sixth step, the laminate 165 is divided to individually separate the light reflecting layer 140 and the mounting substrate 150 at the same time. The laminate 165 can be divided using, for example, a dicing blade DB3. The laminate 165 is divided into light emitting devices 100. The light emitting device 100 includes a light emitting element 10, a light-transmitting member 20, an adhesive 30, a light reflecting member 40 obtained by dividing the light reflecting layer 140, a substrate 50 obtained by dividing the mounting substrate 150, and an electrode 60.

[0078] The slits 121 formed in the second rear surface 120b of the light-transmitting substrate 120 will be described below. FIG. 30 is a plan view showing a light-transmitting substrate in the method for manufacturing the light-emitting device according to the first embodiment. FIG. 31 is a perspective view illustrating a light-transmitting substrate in the method for manufacturing the light-emitting device according to the first embodiment. FIG. 32 is a perspective view illustrating a part of a light-transmitting substrate in the method for manufacturing the light-emitting device according to the first embodiment. In Fig. 30, the positions where the slits 121 are formed are indicated by hatching. Also, in Fig. 30, the positions where the substrate is divided in the third step (that is, the division lines DL) are indicated by two-dot chain lines. FIG. 32 shows an enlarged view of the region R2 shown in FIG. As shown in FIGS. 30 to 32, in the method for manufacturing the light emitting device according to the first embodiment, in the first step, a light-transmitting substrate 120 having slits 121 formed in a matrix on a second rear surface 120b is prepared.

[0079] In the first embodiment, the slit 121 has a plurality of first slit regions 121a and a plurality of second slit regions 121b. The plurality of second slit regions 121b intersect with the plurality of first slit regions 121a, respectively. The plurality of first slit regions 121a extend along the X direction, and the plurality of second slit regions 121b extend along the Y direction. As shown in FIG. 32, a structure in which curved surfaces intersect is formed at the intersections between the first slit regions 121a and the second slit regions 121b.

[0080] Furthermore, in the first step, it is preferable to prepare the light-transmitting substrate 120 in which the slit 121 connected to the side surface 120c of the light-transmitting substrate 120 is formed. In other words, it is preferable that the slit 121 extends to the outside of the light-transmitting substrate 120. The side surface 120c connects the second main surface 120a and the second back surface 120b.

[0081] As shown in FIG. 30, the division lines DL extend in a matrix. The division lines DL include first division lines DL1 extending along the X direction and second division lines DL2 extending along the Y direction. In the first embodiment, slits 121 are formed at positions overlapping all of the first division lines DL1 and all of the second division lines DL2. That is, in the first embodiment, a portion of the slits 121 remains on each of the four sides of the divided light-transmitting member 20. This makes it possible to manufacture a light-emitting device 100 in which the first regions 23a extend along each of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view, as shown in FIGS. 1 and 2.

[0082] The effects of the method for manufacturing the light emitting device according to the first embodiment will be described below. In the manufacturing method of the light emitting device according to the first embodiment, in a first step, a light-transmitting substrate 120 having slits 121 formed on the second back surface 120b is prepared, and in a third step, the light-transmitting substrate 120 (i.e., the light-transmitting member 20) is divided so that a part of the slit 121 (i.e., the inclined surface 121s) remains after singulation, thereby making it possible to easily manufacture a light emitting device having the first region 23a formed on the second side surface 23 of the light-transmitting member 20. This makes it possible to easily manufacture a light emitting device with increased brightness. Furthermore, in the third step, the wafer 110 and the translucent substrate 120 are singulated together, so that when viewed from above, in the singulated structure 137, the outer peripheral edge 23e of the second side surface 23 of the translucent member 20 overlaps with the outer peripheral edge 13e of the first side surface 13 of the light-emitting element 10.

[0083] Furthermore, in the manufacturing method of the light-emitting device according to the first embodiment, in the first step, a light-transmitting substrate 120 having slits 121 formed in a matrix pattern on the second rear surface 120b is prepared, thereby making it possible to manufacture a light-emitting device in which the first region 23a extends along all four sides (i.e., the first side 20a to the fourth side 20d) of the external shape (i.e., quadrangle) of the light-transmitting member 20 when viewed from above.

[0084] Furthermore, in the manufacturing method of the light-emitting device according to the first embodiment, in the first step, a light-transmitting substrate 120 is prepared in which slits 121 connected to the side surfaces 120c of the light-transmitting substrate 120 are formed. As a result, in the second step, when the second back surface 120b is bonded to the first main surface 110a via the adhesive layer 130, gas generated during curing of the adhesive layer 130 is exhausted to the outside of the structure 135 through the slits 121 formed in the second back surface 120b. This reduces the occurrence of adhesion defects such as voids due to gas generated during curing of the adhesive layer 130. In particular, in the manufacturing method of the light-emitting device according to the first embodiment, the slits 121 are formed in a matrix so that all of the slits 121 and all of the parting lines DL are aligned. This allows gas from the adhesive layer 130 in the second step to be efficiently exhausted to the outside in both the row and column directions, further reducing the occurrence of voids.

[0085] Furthermore, in the manufacturing method of the light emitting device according to the first embodiment, in the second step, the structure 135 is heated and pressurized to harden the adhesive layer 130. This can improve the adhesive strength of the adhesive layer 130.

[0086] Next, manufacturing methods according to the second to sixth embodiments will be described with reference to Figures 33 to 37. In Figures 33 to 37, the positions where the slits 121 are formed are indicated by hatching. The positions where the substrate is divided in the third step (i.e., the division lines DL) are indicated by two-dot chain lines.

[0087] (Second embodiment) FIG. 33 is a plan view showing a light-transmitting substrate in the method for manufacturing the light-emitting device according to the second embodiment. The manufacturing method of the light-emitting device according to the second embodiment is substantially the same as the manufacturing method of the light-emitting device according to the first embodiment, except that in the first step, the light-transmitting substrate 120A shown in FIG. 33 is prepared instead of the light-transmitting substrate 120 shown in FIG. 30.

[0088] 33, in the manufacturing method of the light emitting device according to the second embodiment, in a first step, a light-transmitting substrate 120A is prepared, on whose second rear surface 120b slits 121 are formed in a matrix. The slits 121 have a plurality of first slit regions 121a and a plurality of second slit regions 121b. Each of the plurality of first slit regions 121a extends along the X direction. Each of the plurality of second slit regions 121b extends along the Y direction.

[0089] As shown in FIG. 33, in the second embodiment, first slit regions 121a are formed at positions overlapping one of two adjacent first parting lines DL1, and no first slit regions 121a are formed at positions overlapping the other of two adjacent first parting lines DL1. Also, in the second embodiment, second slit regions 121b are formed at positions overlapping all second parting lines DL2. That is, in the second embodiment, parts of the slits 121 remain on three of the four sides of the divided light-transmitting member 20. As a result, as shown in FIGS. 9 and 10, it is possible to manufacture a light-emitting device 100A in which the first regions 23a extend along three of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view.

[0090] (Third embodiment) FIG. 34 is a plan view showing a light-transmitting substrate in a manufacturing method for a light-emitting device according to the third embodiment. The manufacturing method of the light-emitting device according to the third embodiment is substantially the same as the manufacturing method of the light-emitting device according to the first embodiment, except that in the first step, the light-transmitting substrate 120B shown in FIG. 34 is prepared instead of the light-transmitting substrate 120 shown in FIG. 30.

[0091] 34, in the manufacturing method of the light emitting device according to the third embodiment, in the first step, a light-transmitting substrate 120B is prepared, in which slits 121 are formed in one direction on a second rear surface 120b. The slits 121 have a plurality of second slit regions 121b and no first slit regions 121a. Each of the plurality of second slit regions 121b extends along the Y direction.

[0092] As shown in Fig. 34, in the third embodiment, the first slit regions 121a are not formed in positions overlapping with the first dividing lines DL1. Moreover, in the third embodiment, the second slit regions 121b are formed in positions overlapping with all the second dividing lines DL2. That is, in the third embodiment, parts of the slits 121 remain on two opposing sides of the four sides of the divided light-transmitting member 20. This makes it possible to manufacture a light-emitting device 100B, as shown in Figs. 11 and 12, in which the first regions 23a extend along two opposing sides of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view.

[0093] (Fourth embodiment) FIG. 35 is a plan view showing a light-transmitting substrate in a method for manufacturing a light-emitting device according to the fourth embodiment. The manufacturing method of the light-emitting device according to the fourth embodiment is substantially the same as the manufacturing method of the light-emitting device according to the first embodiment, except that in the first step, the light-transmitting substrate 120C shown in FIG. 35 is prepared instead of the light-transmitting substrate 120 shown in FIG. 30.

[0094] 35, in the manufacturing method of the light emitting device according to the fourth embodiment, in a first step, a light-transmitting substrate 120C is prepared, on whose second rear surface 120b slits 121 are formed in a matrix. The slits 121 include a plurality of first slit regions 121a and a plurality of second slit regions 121b. Each of the plurality of first slit regions 121a extends along the X direction. Each of the plurality of second slit regions 121b extends along the Y direction.

[0095] 35, in the fourth embodiment, first slit regions 121a are formed at positions overlapping one of two adjacent first dividing lines DL1, and first slit regions 121a are not formed at positions overlapping the other of two adjacent first dividing lines DL1. Also, in the fourth embodiment, second slit regions 121b are formed at positions overlapping one of two adjacent second dividing lines DL2, and second slit regions 121b are not formed at positions overlapping the other of two adjacent second dividing lines DL2. That is, in the fourth embodiment, parts of the slits 121 remain on two adjacent sides of the divided light-transmitting member 20 among the four sides. This allows the manufacture of a light emitting device 100C in which the first region 23a extends along two adjacent sides of the four sides (i.e., first side 20a to fourth side 20d) of the external shape (i.e., quadrangle) of the light-transmitting member 20 when viewed from above, as shown in Figures 13 and 14.

[0096] (Fifth embodiment) FIG. 36 is a plan view showing a light-transmitting substrate in a manufacturing method for a light-emitting device according to the fifth embodiment. The manufacturing method of the light-emitting device according to the fifth embodiment is substantially the same as the manufacturing method of the light-emitting device according to the first embodiment, except that in the first step, the light-transmitting substrate 120D shown in FIG. 36 is prepared instead of the light-transmitting substrate 120 shown in FIG. 30.

[0097] 36, in the manufacturing method of the light emitting device according to the fifth embodiment, in the first step, a light-transmitting substrate 120D is prepared, in which slits 121 are formed in one direction on a second rear surface 120b. The slits 121 have a plurality of second slit regions 121b and no first slit regions 121a. Each of the plurality of second slit regions 121b extends along the Y direction.

[0098] As shown in FIG. 36, in the fifth embodiment, the first slit regions 121a are not formed at positions overlapping with the first parting lines DL1. Also, in the fifth embodiment, the second slit regions 121b are formed at positions overlapping with one of the two adjacent second parting lines DL2, but the second slit regions 121b are not formed at positions overlapping with the other of the two adjacent second parting lines DL2. That is, in the fifth embodiment, a part of the slit 121 remains on one of the four sides of the divided light-transmitting member 20. As a result, as shown in FIGS. 15 and 16, it is possible to manufacture a light-emitting device 100D in which the first region 23a extends along one of the four sides (i.e., the first side 20a to the fourth side 20d) of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view.

[0099] (Sixth embodiment) FIG. 37 is a plan view showing a light-transmitting substrate in a manufacturing method for a light-emitting device according to the sixth embodiment. The manufacturing method of the light-emitting device according to the sixth embodiment is substantially the same as the manufacturing method of the light-emitting device according to the first embodiment, except that in the first step, the light-transmitting substrate 120E shown in FIG. 37 is prepared instead of the light-transmitting substrate 120 shown in FIG. 30.

[0100] As shown in FIG. 37 , in the manufacturing method of the light-emitting device according to the sixth embodiment, in a first step, a light-transmitting substrate 120E is prepared, in which slits 121 are formed in a matrix on a second rear surface 120b. The slits 121 include a plurality of first slit regions 121a and a plurality of second slit regions 121b. Each of the first slit regions 121a extends in a direction intersecting the X direction and the Y direction. Each of the second slit regions 121b extends in a direction intersecting the X direction, the Y direction, and the direction in which the first slit regions 121a extend. The extension direction of the second slit regions 121b is perpendicular to the extension direction of the first slit regions 121a.

[0101] 37, in the sixth embodiment, the first slit regions 121a and the second slit regions 121b are formed so as to overlap with the intersections of the first parting lines DL1 and the second parting lines DL2. This makes it possible to manufacture a light emitting device 100E in which the first regions 23a are arranged at the four corners of the outline (i.e., quadrangle) of the light-transmitting member 20 in a top view, as shown in FIGS.

[0102] In the manufacturing methods of the light emitting devices according to the second to sixth embodiments, in the first step, a light-transmitting substrate 120 having slits 121 formed on the second back surface 120b is prepared, and in the third step, the light-transmitting substrate 120 (i.e., the light-transmitting member 20) is divided so that a part of the slit 121 (i.e., the inclined surface 121s) remains after singulation, thereby easily manufacturing a light emitting device having the first region 23a formed on the second side surface 23 of the light-transmitting member 20. This makes it possible to easily manufacture a light emitting device with increased brightness.

[0103] Embodiments may include the following features.

[0104] (Configuration 1) A light-emitting element; a light-transmitting member disposed on the light-emitting element; Equipped with the light emitting element has a first upper surface, a first lower surface, and a first side surface connecting the first upper surface and the first lower surface; the light-transmitting member has a second upper surface, a second lower surface, and a second side surface connecting the second upper surface and the second lower surface, the second side surface has a first region that slopes downward toward the center of the second lower surface, the first region is a flat surface or a curved surface, When viewed from above, an outer peripheral edge of the second side surface overlaps with an outer peripheral edge of the first side surface, A light emitting device, wherein an outer peripheral edge of the second lower surface overlaps with a lower edge of the first region when viewed from above.

[0105] (Configuration 2) the second side surface further has a second region located above the first region, 2. The light emitting device according to claim 1, wherein the second region is connected to the first region and is a plane extending in the up-down direction.

[0106] (Configuration 3) 3. The light emitting device of claim 1, wherein the first region is a curved surface.

[0107] (Configuration 4) When viewed from above, the outer shape of the light-transmitting member is rectangular, 4. The light emitting device according to any one of configurations 1 to 3, wherein the first region extends along two opposing sides of the four sides of the rectangle.

[0108] (Configuration 5) When viewed from above, the outer shape of the light-transmitting member is rectangular, 5. The light emitting device according to any one of configurations 1 to 4, wherein the first region extends along each of the four sides of the rectangle.

[0109] (Configuration 6) 6. The light emitting device according to any one of configurations 1 to 5, wherein the light-transmitting member contains a phosphor.

[0110] (Configuration 7) 7. The light emitting device according to configuration 6, wherein the phosphor includes at least one of an oxide phosphor, a nitride phosphor, and an oxynitride phosphor.

[0111] (Configuration 8) a light reflecting member that surrounds the light emitting element and the light transmissive member; The light emitting device according to any one of configurations 1 to 7, wherein the light reflecting member is in contact with the first side surface and the second side surface, and is positioned between the first upper surface and the first region in the up-down direction.

[0112] (Configuration 9) a first step of preparing a wafer including a plurality of light-emitting elements and having a first main surface and a first back surface, and a light-transmitting substrate having a second main surface and a second back surface, with a slit formed in the second back surface; a second step of bonding the second back surface to the first main surface to form a structure in which the light-transmitting substrate is bonded onto the wafer; a third step of dividing the structure at a position overlapping the slit to individually separate the wafer and the light-transmitting substrate at the same time; Equipped with In the first step, the light-transmitting substrate is prepared, in which the slit has an inclined surface that is inclined so as to widen from the second main surface toward the second back surface; the inclined surface is a flat surface or a curved surface, In the third step, the light-transmitting substrate is divided so that a part of the slit remains in the light-transmitting substrate after the individual division.

[0113] (Configuration 10) 10. The method for manufacturing a light-emitting device according to claim 9, wherein the first step includes preparing the light-transmitting substrate having the slits formed in a matrix pattern on the second rear surface.

[0114] (Configuration 11) In the first step, the light-transmitting substrate is prepared, in which the slit is formed to connect to a side surface connecting the second main surface and the second back surface; 11. The method for manufacturing a light emitting device according to Configuration 9 or 10, wherein in the second step, the second back surface is bonded to the first main surface via an adhesive layer.

[0115] As described above, according to the embodiment, a light emitting device capable of increasing brightness and a method for manufacturing a light emitting device are provided.

[0116] The above-described embodiments are examples of realizing the present invention, and the present invention is not limited to these embodiments. For example, the present invention also includes embodiments in which some components or steps are added, deleted, or modified in the above-described embodiments. Furthermore, the above-described embodiments can be implemented in combination with each other. [Explanation of symbols]

[0117] 10: Light emitting element 11: 1st top surface 12: 1st bottom surface 13:1st side 13e: Outer edge 20: Translucent member 20a~20d: Sides 21: 2nd top surface 22: 2nd bottom surface 22e: Outer edge 23:Second side 23a:First area 23b:Second area 23c: Third area 23e: Outer edge 23f: Bottom edge 30: Adhesive 40: Light reflecting member 50: Circuit board 60: Electrode 100, 100A, 100B, 100C, 100D, 100E: Light-emitting device 110: Wafer 110a: 1st main surface 110b: 1st back side 120, 120A, 120B, 120C, 120D, 120E: Transparent substrate 120a: second principal surface 120b: 2nd back side 120c: Side 121: Slit 121a: First slit area 121b: Second slit area 121s: Inclined surface 130: Adhesive layer 135: Structure 137: Individualized structure 140: Light reflective layer 150: Mounting board 165: Laminate C: Center DB1, DB2, DB3: Dicing blades DL:Dividing line DL1, DL2: 1st and 2nd dividing lines HT: Heater PR: Press machine W: Width

Claims

1. A light-emitting element; a light-transmitting member disposed on the light-emitting element; Equipped with the light-emitting element has a first upper surface, a first lower surface, and a first side surface connecting the first upper surface and the first lower surface; the light-transmitting member has a second upper surface, a second lower surface, and a second side surface connecting the second upper surface and the second lower surface, the second side surface has a first region that slopes downward toward the center of the second lower surface, the first region is a flat surface or a curved surface, When viewed from above, an outer peripheral edge of the second side surface overlaps with an outer peripheral edge of the first side surface, When viewed from above, an outer peripheral edge of the second lower surface overlaps with a lower edge of the first region.

2. the second side surface further includes a second region located above the first region, The light emitting device according to claim 1 , wherein the second region is connected to the first region and is a plane extending along the up-down direction.

3. The light emitting device according to claim 1 , wherein the first region is a curved surface.

4. When viewed from above, the outer shape of the light-transmitting member is rectangular, The light emitting device according to claim 1 , wherein the first region extends along two opposing sides of the four sides of the rectangle.

5. When viewed from above, the outer shape of the light-transmitting member is rectangular, The light emitting device according to claim 1 , wherein the first region extends along each of four sides of the rectangle.

6. The light emitting device according to claim 1 , wherein the light-transmitting member includes a phosphor.

7. The light emitting device according to claim 6 , wherein the phosphor includes at least one of an oxide phosphor, a nitride phosphor, and an oxynitride phosphor.

8. a light reflecting member that surrounds the light emitting element and the light transmissive member; The light emitting device according to claim 1 , wherein the light reflecting member is in contact with the first side surface and the second side surface, and is positioned between the first upper surface and the first region in the vertical direction.

9. a first step of preparing a wafer including a plurality of light-emitting elements and having a first main surface and a first back surface, and a light-transmitting substrate having a second main surface and a second back surface, with a slit formed in the second back surface; a second step of bonding the second back surface to the first main surface to form a structure in which the light-transmitting substrate is bonded to the wafer; a third step of dividing the structure at a position overlapping the slit to individually separate the wafer and the light-transmitting substrate at the same time; Equipped with In the first step, the light-transmitting substrate is prepared, in which the slit has an inclined surface that is inclined so as to widen from the second main surface toward the second back surface; the inclined surface is a flat surface or a curved surface, In the third step, the light-transmitting substrate is divided so that a part of the slit remains in the light-transmitting substrate after the individual division.

10. The method for manufacturing a light emitting device according to claim 9 , wherein the first step comprises preparing the light-transmitting substrate having the slits formed in a matrix on the second rear surface.

11. In the first step, the light-transmitting substrate is prepared, in which the slit is formed to connect to a side surface connecting the second main surface and the second back surface; The method for manufacturing a light emitting device according to claim 9 , wherein in the second step, the second back surface is bonded to the first main surface via an adhesive layer.

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