Data processing apparatus and gas conversion system

Abstract

To provide a data processing device and a gas conversion system capable of improving characteristics.SOLUTION: According to an embodiment, a data processing device includes an acquisition unit and a processing unit. The acquirer is configured to acquire a first concentration signal obtained from a first concentration sensor capable of detecting a first concentration of a first target substance contained in a first output gas, and a first flow rate signal obtained from a first flow rate sensor capable of detecting a first flow rate of the first output gas. The processor is configured to derive a first concentration value corresponding to the first concentration based on the first concentration signal. The processing unit is capable of deriving a first corrected conversion coefficient obtained by correcting a first conversion coefficient related to a relationship between the first flow rate signal and the first flow rate based on the first concentration value. The processing unit is capable of deriving a first flow rate value corresponding to the first flow rate based on the first flow rate signal using the first corrected conversion coefficient.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION Embodiments of the present invention relate to a data processing device and a gas conversion system. [Background technology]

[0002] For example, there is a gas conversion system that converts carbon dioxide into other gases for use, and in the gas conversion system, it is required to accurately detect the resulting gases. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-46574 Summary of the Invention [Problem to be solved by the invention]

[0004] Embodiments provide data processing devices and gas conversion systems that allow for improved performance. [Means for solving the problem]

[0005] According to an embodiment, a data processing device includes an acquisition unit and a processing unit. The acquisition unit is capable of acquiring a first concentration signal obtained from a first concentration sensor capable of detecting a first concentration of a first target substance contained in a first output gas and a first flow rate signal obtained from a first flow rate sensor capable of detecting a first flow rate of the first output gas. The processing unit is capable of deriving a first concentration value corresponding to the first concentration based on the first concentration signal. The processing unit is capable of deriving a first corrected conversion coefficient by correcting a first conversion coefficient relating to the relationship between the first flow rate signal and the first flow rate based on the first concentration value. The processing unit is capable of deriving a first flow rate value corresponding to the first flow rate based on the first flow rate signal using the first corrected conversion coefficient. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic diagram illustrating a data processing device and a gas conversion system according to the first embodiment. [Figure 2] FIG. 2 is a schematic diagram illustrating a data processing device and a gas conversion system according to the first embodiment. [Figure 3] 3(a) to 3(d) are schematic diagrams illustrating a part of the gas conversion system according to the embodiment. [Figure 4] FIG. 4 is a schematic cross-sectional view illustrating the sensor according to the embodiment. [Figure 5] FIG. 5 is a schematic cross-sectional view illustrating the sensor according to the embodiment. [Figure 6] FIG. 6 is a schematic plan view illustrating the sensor according to the embodiment. [Figure 7] FIG. 7 is a schematic plan view illustrating the sensor according to the embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. [Figure 10] 10A and 10B are schematic plan views illustrating a part of the sensor according to the embodiment. [Figure 11] 11A and 11B are schematic plan views illustrating a part of the sensor according to the embodiment. [Figure 12] 12A and 12B are schematic views illustrating a part of the sensor according to the embodiment. [Figure 13] 13A and 13B are schematic cross-sectional views illustrating the sensor according to the embodiment. [Figure 14] 14A and 14B are schematic cross-sectional views illustrating the sensor according to the embodiment. [Figure 15] 15A and 15B are schematic plan views illustrating the sensor according to the embodiment. [Figure 16]16A and 16B are schematic cross-sectional views illustrating sensors according to the embodiment. [Figure 17] 17A and 17B are schematic cross-sectional views illustrating the sensor according to the embodiment. [Figure 18] FIG. 18 is a schematic view illustrating a part of the sensor according to the embodiment. [Figure 19] FIG. 19 is a schematic diagram illustrating a data processing device according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and in each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted where appropriate.

[0008] (First embodiment) FIG. 1 is a schematic diagram illustrating a data processing device and a gas conversion system according to the first embodiment. 1, a data processing device 710 according to the embodiment includes an acquisition unit 72 and a processing unit 71. The acquisition unit 72 can acquire a first concentration signal sc1 and a first flow rate signal sf1. The acquisition unit 72 is, for example, an interface.

[0009] For example, a first concentration sensor 51c is provided. The first concentration sensor 51c is capable of detecting a first concentration CN1 of a first target substance 81am contained in the first output gas 81a. The first flow rate sensor 51f is capable of detecting a first flow rate FL1 of the first output gas 81a. The acquisition unit 72 acquires a first concentration signal sc1 obtained from the first concentration sensor 51c and a first flow rate signal sf1 obtained from the first flow rate sensor 51f. The first concentration sensor 51c and the first flow rate sensor 51f are included in the sensor device 50, for example.

[0010] The processing unit 71 acquires these signals from the acquiring unit 72. The processing unit 71 can derive a first concentration value Vc1 corresponding to the first concentration CN1 based on the first concentration signal sc1. For example, the processing unit 71 derives the first concentration value Vc1 by performing a first process P1 based on the first concentration signal sc1.

[0011] Meanwhile, the processing unit 71 performs a second process P2. In the second process P2, the processing unit 71 derives a first flow rate value Vf1 corresponding to the first flow rate FL1 based on the first flow rate signal sf1. At this time, a conversion coefficient "k" relating to the relationship between the first flow rate signal sf1 and the first flow rate value Vf1 is used. The conversion coefficient "k" is, for example, a conversion factor. In this embodiment, the conversion coefficient "k" is corrected by the first concentration value Vc1. The "flow rate" is, for example, the volume of gas flowing per unit time.

[0012] For example, the processing unit 71 can derive a first corrected conversion coefficient k1′ by correcting a first conversion coefficient k1 relating to the relationship between the first flow rate signal sf1 and the first flow rate FL1 based on the first concentration value Vc1. The processing unit 71 can use the first corrected conversion coefficient k1′ to derive a first flow rate value Vf1 corresponding to the first flow rate FL1 based on the first flow rate signal sf1.

[0013] The first flow sensor 51f outputs a first flow signal sf1 as a detection value of the first flow rate FL1 of the first output gas 81a. In the second process P2, the value of the first flow rate signal sf1 is calculated as a first flow rate value Vf1 using a conversion coefficient "k." At this time, the first flow rate signal sf1 output from the first flow rate sensor 51f not only varies depending on the first flow rate FL1, but is also affected by the concentration (and type of substance) of the first target substance 81am contained in the first output gas 81a. This is because the characteristics of the first output gas 81a change depending on the concentration (and type of substance) of the first target substance 81am. The characteristics of the first output gas 81a include, for example, specific heat, thermal conductivity, specific gravity, etc.

[0014] Therefore, the conversion coefficient "k" depends on the concentration of the first target substance 81am (and the type of the substance) and is not necessarily constant.

[0015] In this embodiment, a first corrected conversion coefficient k1' is used, which is obtained by correcting the first conversion coefficient k1 based on the first concentration value Vc1. By using the first corrected conversion coefficient k1' to derive the first flow rate value Vf1 based on the first flow rate signal sf1, the flow rate can be detected more accurately. According to this embodiment, a data processing device capable of improving characteristics can be provided.

[0016] As described above, in this embodiment, the detection result from the first concentration sensor 51c is used to correct the detection result from the first flow rate sensor 51f to calculate the flow rate. Therefore, the time delay in detection by the first concentration sensor 51c is small. For example, the absolute value of the difference between the time when the acquisition unit 72 acquires the first concentration signal sc1 from the first concentration sensor 51c and the time when the acquisition unit 72 acquires the first flow rate signal sf1 from the first flow rate sensor 51f is 10 seconds or less. This small time difference allows for more accurate correction.

[0017] For example, there is a reference example in which it takes a long time for a concentration sensor to perform detection. For example, the concentration sensor detects the concentration using a chromatograph. In such a reference example, if the flow rate fluctuates during detection by the concentration sensor, the concentration detected by the concentration sensor cannot keep up with the fluctuating flow rate. Therefore, in this reference example, the concentration detection result is not used to correct the conversion coefficient related to the flow rate.

[0018] In contrast to this, in this embodiment, the conversion coefficient used to calculate the flow rate is corrected using the short-term detection result of the first concentration sensor 51c, thereby enabling an accurate flow rate to be detected.

[0019] In this embodiment, at least a part of the first concentration sensor 51c has an MEMS structure, which allows the concentration to be detected in a short time. An example of the configuration of the first concentration sensor 51c will be described later.

[0020] As shown in FIG. 1, a first output gas 81a is output from the gas conversion unit 80. For example, the gas conversion unit 80 includes an input unit 80I and a first output unit 80Oa. These may be, for example, pipes. A first substance 80a is introduced into the input unit 80I. In one example, the first substance 80a includes, for example, carbon dioxide. In this example, a second substance 80b is further introduced into the input unit 80I. The second substance 80b includes, for example, hydrogen. The first substance 80a and the second substance 80b are contained in the input gas 80M.

[0021] The gas converting unit 80 is capable of converting at least a portion of the input gas 80M containing the first substance 80a into the first output gas 81a. For example, the following chemical reaction occurs. CO2+4H2→CH4+2H2O This chemical reaction results in a first output gas 81a, which includes at least one selected from the group consisting of methane, water, carbon dioxide, and hydrogen. Thus, in one example, first output gas 81a includes at least one selected from the group consisting of methane, water, carbon dioxide, and hydrogen.

[0022] The flow rate and concentration (and type) of the output gas can be detected with high accuracy. The product of flow rate, concentration, and time allows for more accurate detection of the amount of substance obtained by conversion.

[0023] 1, the gas conversion system 310 according to the embodiment includes the data processing device 710, the first concentration sensor 51c, the first flow rate sensor 51f, and the gas converting unit 80. The location where the data processing device 710 is provided may be different from the locations where the first concentration sensor 51c, the first flow rate sensor 51f, and the gas converting unit 80 are provided. Signals (or information) may be transmitted and received by any method, such as wired or wireless.

[0024] 1, gas conversion system 310 may further include gas conversion control unit 75. Gas conversion control unit 75 is capable of controlling gas conversion unit 80 based on at least one of first concentration value Vc1 and first flow rate value Vf1 derived by processing unit 71. This allows gas conversion unit 80 to operate more efficiently.

[0025] FIG. 2 is a schematic diagram illustrating a data processing device and a gas conversion system according to the first embodiment. As shown in FIG. 2, in this example, the acquisition unit 72 can acquire a first concentration signal sc1, a first flow rate signal sf1, a second concentration signal sc2, and a second flow rate signal sf2.

[0026] For example, in addition to first output gas 81a, second output gas 81b is output from gas conversion unit 80. Detection of first output gas 81a is performed in the same manner as in the example of Fig. 1. Detection of second output gas 81b will be described below.

[0027] The acquiring unit 72 can further acquire a second concentration signal sc2 and a second flow rate signal sf2. The second concentration signal sc2 is obtained from a second concentration sensor 52c capable of detecting a second concentration CN2 of the second target substance 81bm contained in the second output gas 81b. The second flow rate signal sf2 is obtained from a second flow rate sensor 52f capable of detecting a second flow rate FL2 of the second output gas 81b.

[0028] The processing unit 71 can derive a second concentration value Vc2 corresponding to the second concentration CN2 based on the second concentration signal sc2. For example, the second concentration value Vc2 is derived by the third process P3.

[0029] The processing unit 71 is capable of deriving a second corrected conversion coefficient k2' by correcting the second conversion coefficient k2 relating to the relationship between the second flow rate signal sf2 and the second flow rate FL2 based on the second concentration value Vc2. The processing unit 71 is capable of deriving a second flow rate value Vf2 corresponding to the second flow rate FL2 based on the second flow rate signal sf2 using the second corrected conversion coefficient k2'. For example, in the fourth process P4, the second corrected conversion coefficient k2' is derived (corrected) and the second flow rate value Vf2 is derived.

[0030] For example, the flow rate and concentration of each of the plurality of types of output gases (first output gas 81a and second output gas 81b) can be detected with high accuracy.

[0031] 2, the absolute value of the difference between the time when the acquisition unit 72 acquires the second concentration signal sc2 from the second concentration sensor 52c and the time when the acquisition unit 72 acquires the second flow rate signal sf2 from the second flow rate sensor 52f is preferably 10 seconds or less. The absolute value of the difference may be 5 seconds or less. The absolute value of the difference may also be 2 seconds or less.

[0032] At least a part of the second concentration sensor 52c preferably has an MEMS structure, which allows the concentration to be detected in a short time.

[0033] The second output gas 81b is output from the gas conversion unit 80. The gas conversion unit 80 is capable of converting at least a portion of the input gas 80M containing the first substance 80a into the first output gas 81a and the second output gas 81b. The first output gas 81a is output from the first output unit 80Oa. The second output gas 81b is output from the second output unit 80Ob. In this example, the gas conversion unit 80 contains an electrolyte 84.

[0034] In one example, the gas conversion unit 80 can generate a first output gas 81a and a second output gas 81b from a first substance 80a using an electrolyte 84. For example, the first substance 80a includes carbon dioxide. Heat and / or electricity can be supplied to the gas conversion unit 80 from an external source. A catalyst can be disposed within the gas conversion unit 80 to cause the conversion reaction.

[0035] For example, the following chemical reactions occur: The chemical reactions may include electrochemical reactions. CO2+H2O→CO+H2+O2 For example, carbon monoxide, hydrogen, and oxygen are obtained from the first substance 80a (carbon dioxide) and water. For example, the first output gas 81a includes at least one selected from the group consisting of carbon monoxide, hydrogen, water, and carbon dioxide. The second output gas 81b includes at least one selected from the group consisting of carbon dioxide, oxygen, hydrogen, and water. The flow rates and concentrations (and types) of multiple output gases including multiple types of target substances (first target substance 81am and second target substance 81bm) can be detected with high accuracy. The amount of the substance obtained by conversion can be detected more accurately by the product of the flow rate, concentration, and time.

[0036] 2, the detected values ​​may also be supplied to gas conversion control unit 75. Gas conversion control unit 75 can control gas conversion unit 80 based on at least one of first concentration value Vc1, first flow rate value Vf1, second concentration value Vc2, and second flow rate value Vf2. This allows gas conversion unit 80 to operate more efficiently.

[0037] 3(a) to 3(d) are schematic diagrams illustrating a part of the gas conversion system according to the embodiment. As shown in FIG. 3(a), the sensor device 50 may be provided in the first output section 80Oa (e.g., a pipe). As shown in FIG. 3(b), the sensor device 50 may be provided in a recess provided in the first output section 80Oa (e.g., a pipe). As shown in FIGS. 3(c) and 3(d), the sensor device 50 may be provided in a branched portion provided in the first output section 80Oa (e.g., a pipe). As shown in FIG. 3(d), the branched portion provided in the first output section 80Oa (e.g., a pipe) may be bypassed and returned to the original portion.

[0038] An example of the first concentration sensor 51c will be described below. The following description may also be applied to the second concentration sensor 52c. The first concentration sensor 51c may include any of sensors 110, 110A to 110C, 111, and 120 to 122 described below.

[0039] FIG. 4 is a schematic cross-sectional view illustrating the sensor according to the embodiment. As shown in FIG. 4, the sensor 110 according to the embodiment includes a base 41, a first detection unit 10A, a second detection unit 10B, and a third detection unit 10C.

[0040] 4, the base 41 includes a first base region 41a, a second base region 41b, and a third base region 41c. In this example, the base 41 includes a substrate 41s and an insulating film 41i. The substrate 41s may be, for example, a semiconductor substrate (e.g., a silicon substrate). In one example, the base 41 may include a semiconductor. The substrate 41s may include, for example, a semiconductor circuit. The substrate 41s may include a connecting member such as a via electrode.

[0041] For example, the direction from the first substrate region 41a to the second substrate region 41b is along the upper surface of the substrate 41. The direction from the first substrate region 41a to the third substrate region 41c is along the upper surface of the substrate 41. In this example, the first substrate region 41a, the second substrate region 41b, and the third substrate region 41c are continuous with one another. As will be described later, these substrate regions may be separated from one another.

[0042] The first detection unit 10A includes a first support portion 31S, a first connection portion 31C, and a first detection element 11E. The first support portion 31S is fixed to the base 41. The first support portion 31S may be fixed to the base 41 via another member. The first connection portion 31C is supported by the first support portion 31S. The first connection portion 31C supports the first detection element 11E. A first gap g1 is provided between the first base region 41a and the first detection element 11E. A first gap g1 is further provided between the first connection portion 31C and the first base region 41a.

[0043] For example, the first detection element 11E includes a first resistive member 11, a first conductive member 21, and a first insulating member 18A. At least a portion of the first insulating member 18A is located between the first resistive member 11 and the first conductive member 21.

[0044] As shown in FIG. 4, the second detection unit 10B includes a second support portion 32S, a second connection portion 32C, and a second detection element 12E. The second support portion 32S is fixed to the base 41. The second support portion 32S may be fixed to the base 41 via another member. The second connection portion 32C is supported by the second support portion 32S. The second connection portion 32C supports the second detection element 12E. A second gap g2 is provided between the second base region 41b and the second detection element 12E. The second gap g2 is further provided between the second connection portion 32C and the second base region 41b.

[0045] The second detection element 12E includes a second resistive member 12, a second conductive member 22, and a second insulating member 18B. At least a portion of the second insulating member 18B is located between the second resistive member 12 and the second conductive member 22.

[0046] 4, the third detection unit 10C includes a third detection element 13E. The third detection element 13E includes a third resistance member 13, a third other resistance member 13a, and a third conductive member 23. The third conductive member 23 is located between the third resistance member 13 and the third other resistance member 13a. A third gap g3 is provided between the third base region 41c and the third detection element 13E.

[0047] 4, the third detection element 13E may further include a third insulating member 18C. At least a portion of the third insulating member 18C is located between the third resistive member 13a and the third conductive member 23, and between the third other resistive member 13a and the third conductive member 23.

[0048] As will be described later, the third detection element 13E is supported by a third support portion 33S and a third connection portion 33C (see FIGS. 12(a) and 12(b)).

[0049] For example, a first current is supplied to the first conductive member 21 from the control unit described below. This causes the temperature of the first detection element 11E to rise. The target gas 81 is introduced into the space around the first detection element 11E. The temperature of the first detection element 11E changes (e.g., decreases) due to thermal conduction by the target gas 81. The temperature change mainly depends on the type and concentration of the target substance contained in the target gas 81. The temperature change also depends on the flow rate of the target gas 81. The temperature change is detected as a change in the electrical resistance of the first resistance member 11. The first detection unit 10A functions at least as a first concentration sensor.

[0050] For example, a second current is supplied to the second conductive member 22 from the control unit described below. This increases the temperature of the second detection element 12E. The target gas 81 is introduced into the space around the second detection element 12E. The temperature of the second detection element 12E changes (e.g., decreases) due to thermal conduction by the target gas 81. The temperature change mainly depends on the type and concentration of the target substance contained in the target gas 81. The temperature change also depends on the flow rate of the target gas 81. The temperature change is detected as a change in the electrical resistance of the first resistance member 11. The second detection unit 10B functions at least as a second concentration sensor.

[0051] As will be described later, the first detection element 11E and the second detection element 12E have different thermal characteristics. The thermal characteristics include, for example, heat dissipation. The thermal characteristics include, for example, thermal resistance. This allows the multiple detection elements to have different characteristics with respect to the target gas 81. For example, it becomes possible to detect the concentrations of multiple types of detection targets contained in the target gas 81.

[0052] Meanwhile, a third current is supplied to the third conductive member 23 from the control unit described below. This causes the temperatures of the third resistance member 13 and the third other resistance member 13a included in the third detection element 13E to rise. For example, the target gas 81 flows from the third resistance member 13 to the third other resistance member 13a. The flow of the target gas 81 causes a difference in temperature between the third resistance member 13 and the third other resistance member 13a. The temperature difference between these resistance members can be detected by detecting the electrical resistance of these resistance members. The temperature difference mainly depends on the flow rate of the target gas 81. The temperature difference also depends on the type and concentration of the target substance in the target gas 81.

[0053] As described above, the detection characteristics of the first detection unit 10A (first concentration sensor) depend on the flow rate as well as the concentration. The detection characteristics of the second detection unit 10B (second concentration sensor) depend on the flow rate as well as the concentration. The detection characteristics of the third detection unit 10C (flow rate sensor) depend on the type and concentration of the detection target substance as well as the flow rate. These detection units are combined. This allows the type and concentration of the detection target substance to be accurately detected. The flow rate may also be accurately detected.

[0054] According to the embodiment, it is possible to provide a sensor capable of improving characteristics, for example, capable of detecting the respective concentrations of a plurality of different substances with high accuracy.

[0055] The number of concentration sensors may be any integer of 2 or more. At least one flow rate sensor may be provided. For example, a "first detection unit" to an "nth detection unit" may be provided. "n" is any integer of 3 or more. The "nth detection unit" is a flow rate sensor (the third detection unit 10C in the above example). The "first detection unit" to the "(n-1)th detection unit" are multiple sensors. In this case, the detection values ​​V of the "first detection unit" to the "nth detection unit" are out1 ~V outn is expressed by the following first equation.

number

[0056] In the first formula, "f1" to "f n " is a function. "C1" to "C n " is the concentration. "Flow" is the flow rate. By solving the simultaneous equations in the first equation, the concentration and flow rate can be obtained as the second equation.

number

[0057] The calculation of Equation 1 is performed by the control unit, which will be described later, to determine the concentration of the target substance in the target gas to be detected 81. The flow rate may also be determined.

[0058] As described above, the thermal characteristics differ between the first detection unit 10A and the second detection unit 10B. The difference in thermal characteristics can be obtained, for example, by some of the following configurations (and combinations thereof).

[0059] For example, the area of ​​the second detection element 12E is different from the area of ​​the first detection element 11E. For example, the length of the second connection portion 32C is different from the length of the first connection portion 31C. For example, the width of the second connection portion 32C is different from the width of the first connection portion 31C. For example, the thickness of the second connection portion 32C is different from the thickness of the first connection portion 31C. For example, the material of the second connection portion 32C is different from the material of the first connection portion 31C. For example, the distance between the second base region 41b and the second detection element 12E is different from the distance between the first base region 41a and the first detection element 11E. Due to at least one of these differences, different detection characteristics can be obtained from the multiple detection units. Examples of such configuration differences will be described later.

[0060] As shown in FIG. 4, for example, the first detection unit 10A may further include a first other support portion 31aS and a first other connection portion 31aC. The first other support portion 31aS is fixed to the base 41. The first other connection portion 31aC is supported by the first other support portion 31aS. The first other connection portion 31aC supports the first detection element 11E. A first gap g1 is provided between the first base region 41a and the first other connection portion 31aC. In this example, the first detection element 11E is provided between the first connection portion 31C and the first other connection portion 31aC. The first detection unit 10A may have a doubly supported beam structure. The configuration of the first other support portion 31aS may be the same as the configuration of the first support portion 31S. The configuration of the first other connection portion 31aC may be the same as the configuration of the first connection portion 31C.

[0061] As shown in FIG. 4, for example, the second detection unit 10B may further include a second other support portion 32aS and a second other connection portion 32aC. The second other support portion 32aS is fixed to the base 41. The second other connection portion 32aC is supported by the second other support portion 32aS. The second other connection portion 32aC supports the second detection element 12E. A second gap g2 is provided between the second base region 41b and the second other connection portion 32aC. In this example, the second detection element 12E is provided between the second connection portion 32C and the second other connection portion 32aC. The second detection unit 10B may have a doubly supported beam structure. The configuration of the second other support portion 32aS may be similar to that of the second support portion 32S. The configuration of the second other connection portion 32aC may be similar to that of the second connection portion 32C.

[0062] An example of the configuration of the third detection unit 10C will be described later.

[0063] 4, the first direction from the first substrate region 41a to the first detection element 11E is the Z-axis direction. The direction from the second substrate region 41b to the second detection element 12E is along the first direction (Z-axis direction). The direction from the third substrate region 41c to the third detection element 13E is along the first direction (Z-axis direction).

[0064] FIG. 5 is a schematic cross-sectional view illustrating the sensor according to the embodiment. As shown in Fig. 5, the sensor 110 may include a housing 50H. The housing 50H includes an inlet 50I and an outlet 50O. The first detection element 11E, the second detection element 12E, and the third detection element 13E are provided between the base 41 and at least a part of the housing 50H. As shown in Fig. 5, the direction from the third resistance member 13 to the third other resistance member 13a is along the direction of flow of the target gas 81 flowing from the inlet 50I to the outlet 50O.

[0065] FIG. 6 is a schematic plan view illustrating the sensor according to the embodiment. FIG. 6 is a plan view in an XY plane perpendicular to the first direction (Z-axis direction). A portion of the housing 50H is omitted in FIG. 6. As shown in FIG. 6, in this example, the direction from the third resistance member 13 to the third other resistance member 13a is parallel to the flow direction of the target gas 81 flowing from the inlet 50I to the outlet 50O. In this example, the direction from the third resistance member 13 to the third other resistance member 13a is parallel to the direction from the first detection unit 10A to the second detection unit 10B. In this example, in a plane perpendicular to the Z-axis direction, the second detection unit 10B is located between the first detection unit 10A and the third detection unit 10C. Various modifications are possible to the relative positions of the first detection unit 10A, the second detection unit 10B, and the third detection unit 10C.

[0066] FIG. 7 is a schematic plan view illustrating the sensor according to the embodiment. 7, the sensor 110A according to the embodiment also includes a first detection unit 10A, a second detection unit 10B, and a third detection unit 10C. In the sensor 110A, the direction from the third resistance member 13 to the third other resistance member 13a intersects with the direction from the first detection unit 10A to the second detection unit 10B. Other configurations of the sensor 110A may be similar to those of the sensor 110. In the sensor 110A, the direction from the third resistance member 13 to the third other resistance member 13a also follows the flow direction of the target gas 81 flowing from the inlet 50I to the outlet 50O.

[0067] FIG. 8 is a schematic cross-sectional view illustrating the sensor according to the embodiment. As shown in FIG. 8, the sensor 110B according to this embodiment includes a base 41, a first detection unit 10A, a second detection unit 10B, a third detection unit 10C, and a housing 50H. In the sensor 110B, the base 41 is a separate structure from the substrate 41s. The substrate 41s on which the first detection unit 10A is provided is provided in the first substrate region 41a. The substrate 41s on which the second detection unit 10B is provided is provided in the second substrate region 41b. The substrate 41s on which the third detection unit 10C is provided is provided in the third substrate region 41c. These substrates 41s are separated from each other. Except for this, the configuration of the sensor 110B may be similar to that of the sensor 110 or the sensor 110A.

[0068] In sensor 110B, the base 41 may be considered to be part of the housing 50H. A first detection unit 10A is provided between a first base region 41a of the base 41 and a part of the housing 50H. A second detection unit 10B is provided between a second base region 41b of the base 41 and a part of the housing 50H. A third detection unit 10C is provided between a third base region 41c of the base 41 and a part of the housing 50H.

[0069] FIG. 9 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. 9, the sensor 110C according to this embodiment includes a base 41, a first detection unit 10A, a second detection unit 10B, a third detection unit 10C, and a housing 50H. In the sensor 110C, the first base region 41a, the second base region 41b, and the third base region 41c are separated from one another. Except for this, the configuration of the sensor 110C may be similar to that of the sensor 110 or the sensor 110A.

[0070] In this manner, in the embodiment, at least two of the first substrate region 41a, the second substrate region 41b, and the third substrate region 41c may be discontinuous.

[0071] In this example, a plurality of housings 50H are provided. A first detection module including a first detector 10A may be provided between the first base region 41a and a portion of one of the plurality of housings 50H. A second detection module including a second detector 10B may be provided between the second base region 41b and a portion of another of the plurality of housings 50H. A second detection module including a third detector 10C may be provided between the third base region 41c and a portion of another of the plurality of housings 50H.

[0072] Each of the first base region 41a, the second base region 41b, and the third base region 41c may be a part of the housing 50H.

[0073] Examples of the configurations of the first detection unit 10A, the second detection unit 10B, and the third detection unit 10C will be further described below.

[0074] 10A and 10B are schematic plan views illustrating a part of the sensor according to the embodiment. These figures illustrate the first detection unit 10A. Fig. 10(a) illustrates the planar pattern of the first conductive member 21. Fig. 10(b) illustrates the planar pattern of the first resistance member 11.

[0075] As shown in Figures 10(a) and 10(b), in this example, the first detection element 11E (the portion including the first resistance member 11, the first conductive member 21, and the first insulating member 18A) is octagonal. The planar shape of the first detection element 11E is arbitrary. The first detection element 11E has a first area S1. The first area S1 is the area of ​​the first detection element 11E in a plane intersecting a first direction (Z-axis direction) from the first base region 41a to the first detection element 11E.

[0076] 10(a) and 10(b), a control unit 70 may be provided. The control unit 70 is electrically connectable to the first resistance member 11 and the first conductive member 21. The control unit 70, for example, supplies a first current i1 to the first conductive member 21 to increase the temperature of the first detection element 11E.

[0077] The first detection unit 10A may further include a support portion 31bS and a connection portion 31bC. The support portion 31bS is fixed to the base 41. The connection portion 31bC is supported by the support portion 31bS. The connection portion 31bC supports the first detection element 11E.

[0078] The first detection unit 10A may further include a support portion 31cS and a connection portion 31cC. The support portion 31cS is fixed to the base 41. The connection portion 31cC is supported by the support portion 31cS. The connection portion 31cC supports the first detection element 11E. The first detection element 11E is provided between the connection portion 31bC and the connection portion 31cC.

[0079] The first current i1 may be supplied to the first conductive member 21 via the support portion 31bS, the connection portion 31bC, the support portion 31cS, and the connection portion 31cC.

[0080] As shown in FIG. 10(b), the control unit 70 may be electrically connected to the first resistance member 11, for example, via the first support portion 31S, the first connection portion 31C, the first other support portion 31aS, and the first other connection portion 31aC.

[0081] 10(b), the first detection element 11E may include a first layer 15a and a second layer 15b. The first layer 15a and the second layer 15b may include the same material and have the same thickness as the first resistance member 11. The first resistance member 11 is provided between the first layer 15a and the second layer 15b. By providing these layers, deformation (e.g., warpage) of the first detection element 11E is suppressed.

[0082] 11A and 11B are schematic plan views illustrating a part of the sensor according to the embodiment. These figures illustrate the second detection unit 10B. Fig. 11(a) illustrates the plane pattern of the second conductive member 22. Fig. 11(b) illustrates the plane pattern of the second resistance member 12.

[0083] As shown in Figures 11(a) and 11(b), in this example, the second detection element 12E (the portion including the second resistance member 12, the second conductive member 22, and the second insulating member 18B) is octagonal. The planar shape of the second detection element 12E is arbitrary. The second detection element 12E has a second area S2. The second area S2 is the area of ​​the second detection element 12E in a plane intersecting the first direction (Z-axis direction). In this example, the second area S2 is different from the first area S1. In this example, the second area S2 is smaller than the first area S1.

[0084] 11(a) and 11(b), the control unit 70 can be electrically connected to the second resistance member 12 and the second conductive member 22. The control unit 70, for example, supplies a second current i2 to the second conductive member 22 to increase the temperature of the second detection element 12E.

[0085] The second detection unit 10B may further include a support portion 32bS and a connection portion 32bC. The support portion 32bS is fixed to the base 41. The connection portion 32bC is supported by the support portion 32bS. The connection portion 32bC supports the second detection element 12E.

[0086] The second detection unit 10B may further include a support portion 32cS and a connection portion 32cC. The support portion 32cS is fixed to the base 41. The connection portion 32cC is supported by the support portion 32cS. The connection portion 32cC supports the second detection element 12E. The second detection element 12E is provided between the connection portion 32bC and the connection portion 32cC.

[0087] The second current i2 may be supplied to the second conductive member 22 via the support portion 32bS, the connection portion 32bC, the support portion 32cS, and the connection portion 32cC.

[0088] As shown in FIG. 11(b), the control unit 70 may be electrically connected to the second resistance member 12, for example, via the second support portion 32S, the second connection portion 32C, the second other support portion 32aS, and the second other connection portion 32aC.

[0089] 11(b), the second detection element 12E may include a third layer 15c and a fourth layer 15d. The third layer 15c and the fourth layer 15d may include the same material and have the same thickness as the second resistance member 12. The second resistance member 12 is provided between the third layer 15c and the fourth layer 15d. By providing these layers, deformation (e.g., warpage) of the second detection element 12E is suppressed.

[0090] As shown in FIG. 4, the first detection element 11E has a first length L1 in a direction (e.g., a second direction) intersecting the first direction (Z-axis direction). The second detection element 12E has a second length L2 in a direction (e.g., a second direction) intersecting the first direction (Z-axis direction). In this example, the second length L2 is shorter than the first length L1. The difference in area is obtained.

[0091] 12A and 12B are schematic views illustrating a part of the sensor according to the embodiment. These figures illustrate the third detection unit 10C. Fig. 12(a) is a cross-sectional view, and Fig. 12(b) is a plan view.

[0092] 12(a), for example, the third detection unit 10C may include a third support portion 33S and a third connection portion 33C. The third support portion 33S is fixed to the base 41. The third connection portion 33C is supported by the third support portion 33S. The third connection portion 33C supports the third detection element 13E. A third gap g3 is provided between the third base region 41c and the third connection portion 33C.

[0093] As shown in FIG. 12(a), for example, the third detection unit 10C may further include a third other support portion 33aS and a third other connection portion 33aC. The third other support portion 33aS is fixed to the base 41. The third other connection portion 33aC is supported by the third other support portion 33aS. The third other connection portion 33aC supports the third detection element 13E. A third gap g3 is provided between the third base region 41c and the third other connection portion 33aC. In this example, the third detection element 13E is provided between the third connection portion 33C and the third other connection portion 33aC. The third detection unit 10C may have a doubly supported beam structure.

[0094] As shown in FIG. 12(b), in this example, three pairs of third support portions 33S and third connection portions 33C are provided. Three pairs of third other support portions 33aS and third other connection portions 33aC are provided. The control unit 70 is electrically connected to the third resistance member 13 via one third connection portion 33C and one third other connection portion 33aC. The control unit 70 is electrically connected to the third other resistance member 13a via another third connection portion 33C and another third other connection portion 33aC. The control unit 70 is electrically connected to the third conductive member 23 via another third connection portion 33C and another third other connection portion 33aC.

[0095] The control unit 70 supplies a current to the third conductive member 23 to increase the temperature of the third detection element 13E. The control unit 70 can detect the difference between the electrical resistance of the third resistance member 13 and the electrical resistance of the third other resistance member 13a. Based on the detection result of the difference, the flow rate of the detection target gas 81 is detected.

[0096] A sensor according to an embodiment (e.g., sensor 110) may include a control unit 70 (see FIGS. 10(a) and 10(b)). The control unit 70 can obtain first detection data Ds1 (see FIG. 10(b)) from the first detection unit 10A. The control unit 70 can obtain second detection data Ds2 (see FIG. 11(b)) from the second detection unit 10B. The control unit 70 can obtain third detection data Ds3 (see FIG. 12(b)) from the third detection unit 10C. The control unit 70 can derive the concentration and flow rate of the detection target gas 81 based on the first detection data Ds1, the second detection data Ds2, and the third detection data Ds3. The concentration of the detection target gas 81 includes the concentrations of each of multiple types of detection target substances contained in the detection target gas 81.

[0097] The plurality of types of detection target substances may include, for example, at least two selected from the group consisting of carbon dioxide, carbon monoxide, hydrogen, oxygen, and water. The plurality of types of detection target substances is arbitrary.

[0098] The first detection data Ds1 includes a first value Rv1 (see FIG. 10(b)) corresponding to the electrical resistance of the first resistance member 11. The second detection data Ds2 includes a second value Rv2 (see FIG. 11(b)) corresponding to the electrical resistance of the second resistance member 12. The third detection data Ds3 includes a third value Rv3 corresponding to the electrical resistance of the third resistance member 13 and a third other value Rx3 corresponding to the electrical resistance of the third other resistance member 13a (see FIG. 12(b)). The first value Rv1, the second value Rv2, the third value Rv3, and the third other value Rx3 change depending on the concentration of the target gas 81 and the flow rate of the target gas 81.

[0099] Based on these values, the control unit 70 can derive the concentration and flow rate of the detection target gas 81. In the derivation, the above-mentioned first and second formulas are used.

[0100] An example in which the distance between the second substrate region 41b and the second detection element 12E is different from the distance between the first substrate region 41a and the first detection element 11E will be described below. 13A and 13B are schematic cross-sectional views illustrating the sensor according to the embodiment. Fig. 13(a) illustrates a first detection element 11E. Fig. 13(b) illustrates a second detection element 12E. As shown in Figs. 13(a) and 13(b), in the sensor 111 according to the embodiment, the first detection element 11E and the second detection element 12E have different heights relative to the base 41. The remaining configuration of the sensor 111 may be similar to that of the sensor 110, for example.

[0101] In the sensor 111, a first distance d1 in the first direction (Z-axis direction) between the first substrate region 41a and the first detection element 11E is different from a second distance d2 in the first direction between the second substrate region 41b and the second detection element 12E. These different distances result in different heat dissipation characteristics from these detection elements via the substrate 41. Different heat dissipation characteristics are obtained. Utilizing the difference in heat dissipation characteristics enables detection with higher accuracy.

[0102] Below, some examples of differences in the configuration of the connection portion will be described. 14A and 14B are schematic cross-sectional views illustrating the sensor according to the embodiment. 15A and 15B are schematic plan views illustrating the sensor according to the embodiment. Figures 14(a) and 15(a) illustrate the first detection element 11E, and Figures 14(b) and 15(b) illustrate the second detection element 12E.

[0103] 14(a), 14(b), 15(a), and 15(b), in the sensor 120 according to the embodiment, the length of the first connecting portion 31C and the length of the second connecting portion 32C are different from each other. The remaining configuration of the sensor 120 may be similar to that of the sensor 110, for example.

[0104] As shown in Figure 15(a), in this example, the first connection portion 31C has a meandering spring structure, while as shown in Figure 15(b), the second connection portion 32C is linear.

[0105] 15(a), the first connection portion 31C has a first connection length LC1, which is the length of the first connection portion 31C along the path (first connection portion path) between the first support portion 31S and the first detection element 11E.

[0106] 15(b), the second connection portion 32C has a second connection length LC2. The second connection length LC2 is the length of the second connection portion 32C along the path (second connection portion path) between the second support portion 32S and the second detection element 12E. The second connection length LC2 is different from the first connection length LC1.

[0107] 15(a), the first connection portion 31C has a first connection portion width w1, which is the width of the first connection portion 31C along the first connection portion path between the first support portion 31S and the first detection element 11E.

[0108] As shown in FIG. 15(b), the second connection portion 32C has a second connection portion width w2. The second connection portion width w2 is the width of the second connection portion 32C in a direction intersecting the second connection portion path between the second support portion 32S and the second detection element 12E. The second connection portion width w2 may be different from the first connection portion width w1. The difference in width creates a difference in the thermal resistance of the connection portion. The difference in heat dissipation characteristics through the connection portion can be utilized.

[0109] 16A and 16B are schematic cross-sectional views illustrating sensors according to the embodiment. Fig. 16(a) illustrates a first detection element 11E. Fig. 16(b) illustrates a second detection element 12E. As shown in Figs. 16(a) and 16(b), in a sensor 121 according to the embodiment, the thickness of a first connection portion 31C and the thickness of a second connection portion 32C are different from each other. The remaining configuration of the sensor 121 may be similar to that of the sensor 110, for example.

[0110] 16(a), in the sensor 121 according to the embodiment, the first connecting portion 31C has a first connecting portion thickness t1, which is the thickness of the first connecting portion 31C in the first direction (Z-axis direction).

[0111] As shown in FIG. 16(b), the second connection portion 32C has a second connection portion thickness t2. The second connection portion thickness t2 is the thickness of the second connection portion 32C in the first direction (Z-axis direction). The second connection portion thickness t2 is different from the first connection portion thickness t1. This difference in thickness creates a difference in the thermal resistance of the connection portion. For example, this difference can be used to improve the heat dissipation characteristics through the connection portion.

[0112] 17A and 17B are schematic cross-sectional views illustrating the sensor according to the embodiment. Fig. 17(a) illustrates a first detection element 11E. Fig. 17(b) illustrates a second detection element 12E. In the sensor 122 according to the embodiment shown in Figs. 17(a) and 17(b), the thickness and material of the first connection portion 31C and the material of the second connection portion 32C are different from each other. The remaining configuration of the sensor 122 may be similar to that of the sensor 110, for example.

[0113] In the sensor 122, the first connection portion 31C includes a first connection portion material. The second connection portion 32C includes a second connection portion material that is different from the first connection portion material. This difference in materials creates a difference in the thermal resistance of the connection portion. For example, the difference in heat dissipation characteristics through the connection portion can be utilized.

[0114] At least two of the above configurations described with respect to sensors 111 and 120 to 122 may be combined.

[0115] As already described in the embodiment, the first detection unit 10A has a first area S1 of the first detection element 11E, a first connection length LC1 of the first connection portion 31C, a first connection width w1 of the first connection portion 31C, a first connection thickness t1 of the first connection portion 31C, a first connection material of the first connection portion 31C, and a first distance d1, which is the distance between the first base region 41a and the first detection element 11E.

[0116] The second detection unit 10B has at least one of the following: a second area S2 of the second detection element 12E that is different from the first area S1; a second connection length LC2 of the second connection portion 32C that is different from the first connection length LC1; a second connection width w2 of the second connection portion 32C that is different from the first connection width w1; a second connection thickness t2 of the second connection portion 32C that is different from the first connection thickness t1; a second connection material of the second connection portion 32C that is different from the first connection material; and a second distance d2 that is different from the first distance d1. The second distance d2 is the distance between the second base region 41b and the second detection element 12E.

[0117] With this configuration, it is possible to detect the concentration of the detection target substance with higher accuracy. According to the embodiment, it is possible to provide a sensor with improved characteristics. For example, it is possible to detect the concentration of each of multiple different types of substances with high accuracy. The flow rate of the detection target gas 81 may also be detected.

[0118] The first area S1 is the area of ​​the first detection element 11E in a plane intersecting a first direction (Z-axis direction) from the first base region 41a to the first detection element 11E. The second area S2 is the area of ​​the second detection element 12E in this plane.

[0119] The first connection length LC1 is the length of the first connection portion 31C along the first connection portion path between the first support portion 31S and the first detection element 11E. The first connection portion width w1 is the width of the first connection portion 31C in a direction intersecting the first connection portion path. The first connection portion thickness t1 is the thickness of the first connection portion 31C in the first direction.

[0120] The second connection length LC2 is the length of the second connection portion 32C along the second connection path between the second support portion 32S and the second detection element 12E. The second connection width w2 is the width of the second connection portion 32C in a direction intersecting the second connection path. The second connection thickness t2 is the thickness of the second connection portion 32C in the first direction.

[0121] The first distance d1 is the distance along the first direction between the first substrate region 41a and the first detection element 11E. The second distance d2 is the distance along the first direction between the second substrate region 41b and the second detection element 12E.

[0122] An example of the first flow rate sensor 51f will be described below. FIG. 18 is a schematic view illustrating a part of the sensor according to the embodiment. As shown in FIG. 18, the first flow sensor 51f includes, for example, a heater 51h and a temperature sensor 51t. For example, the heater 51h and the temperature sensor 51t are provided in a flow path of the detection target gas (for example, the first output gas 81a). The flow path is, for example, the first output section 80Oa. The detection target gas is heated by the heater 51h. The temperature of the heated detection target gas is detected by the temperature sensor 51t. The temperature detected by the temperature sensor 51t depends on the flow rate of the detection target gas. The flow rate can be detected based on the temperature detection result by the temperature sensor 51t.

[0123] The configuration of the first flow rate sensor 51f can be modified in various ways. The configuration of the second flow rate sensor 52f may be the same as the configuration of the first flow rate sensor 51f.

[0124] FIG. 19 is a schematic diagram illustrating a data processing device according to the embodiment. 19, the data processing device 710 includes a processing unit 71, an acquisition unit 72, and a storage unit 73. The processing unit 71 is, for example, an electric circuit. The storage unit 73 may include, for example, at least one of a read-only memory (ROM) and a random access memory (RAM). Any storage device may be used as the storage unit 73.

[0125] The data processing device 710 may include a display unit 79b and an input unit 79c. The display unit 79b may include various types of displays. The input unit 79c includes, for example, a device with an operation function (such as a keyboard, a mouse, a touch-type input panel, or a voice recognition input device).

[0126] The embodiment may include a program that causes a computer (processing unit 71) to perform the above-described operations. The embodiment may include a storage medium on which the program is stored.

[0127] (Second embodiment) The second embodiment relates to a gas conversion system (for example, gas conversion system 310 or gas conversion system 311).

[0128] As already described, gas conversion system 310 includes data processing device 710, first concentration sensor 51c, first flow rate sensor 51f, and gas converting unit 80 (see FIG. 1). First output gas 81a is output from gas converting unit 80. First concentration sensor 51c includes first detecting unit 10A including first detecting element 11E, second detecting unit 10B including second detecting element 12E, third detecting unit 10C including third detecting element 13E, and base 41 (see FIG. 4). Base 41 includes first base region 41a, second base region 41b, and third base region 41c. A first gap g1 is provided between first base region 41a and first detecting element 11E. A second gap g2 is provided between second base region 41b and second detecting element 12E. A third gap g3 is provided between the third substrate region 41c and the third detection element 13E (see FIG. 4, etc.).

[0129] For example, the first detection unit 10A further includes a first support portion 31S and a first connection portion 31C. The first support portion 31S is fixed to the base 41. The first connection portion 31C is supported by the first support portion 31S. The first connection portion 31C supports the first detection element 11E.

[0130] The first detection unit 10A has a first area S1 of the first detection element 11E, a first connection length LC1 of the first connection portion 31C, a first connection width w1 of the first connection portion 31C, a first connection thickness t1 of the first connection portion 31C, a first connection material of the first connection portion 31C, and a first distance d1, which is the distance between the first base region 41a and the first detection element 11E.

[0131] The second detection unit 10B further includes a second support portion 32S and a second connection portion 32C. The second support portion 32S is fixed to the base 41. The second connection portion 32C is supported by the second support portion 32S. The second connection portion 32C supports the second detection element 12E.

[0132] The second detection unit 10B has at least one of the following: a second area S2 of the second detection element 12E that is different from the first area S1; a second connection length LC2 of the second connection portion 32C that is different from the first connection length LC1; a second connection width w2 of the second connection portion 32C that is different from the first connection width w1; a second connection thickness t2 of the second connection portion 32C that is different from the first connection thickness t1; a second connection material of the second connection portion 32C that is different from the first connection material; and a second distance d2 that is different from the first distance d1. The second distance d2 is the distance between the second base region 41b and the second detection element 12E.

[0133] The third detection element 13E includes a third resistance member 13, a third other resistance member 13a, and a third conductive member 23. The third conductive member 23 is located between the third resistance member 13 and the third other resistance member 13a. This configuration enables more accurate detection of the concentration of the first output gas 81a.

[0134] The gas converting section 80 is capable of converting at least a portion of an input gas 80M containing a first substance 80a into a first output gas 81a.

[0135] In one example, the input gas 80M further includes a second substance 80b. The first substance 80a includes carbon dioxide. The second substance 80b includes hydrogen. In this case, the first output gas 81a includes at least one selected from the group consisting of methane and water.

[0136] In an embodiment, the first output gas 81a may pass through the first concentration sensor 51c after passing through the first flow sensor 51f.

[0137] Gas conversion system 310 may further include gas conversion control unit 75. Gas conversion control unit 75 is capable of controlling gas conversion unit 80 based on at least one of first concentration value Vc1 and first flow rate value Vf1 derived by processing unit 71.

[0138] Gas conversion system 311 (see FIG. 2) may further include second concentration sensor 52c and second flow rate sensor 52f. Second output gas 81b is further output from gas conversion unit 80. Second concentration sensor 52c is capable of detecting a second concentration CN2 of second target substance 81bm contained in second output gas 81b. Second flow rate sensor 52f is capable of detecting a second flow rate FL2 of second output gas 81b.

[0139] The acquiring unit 72 can further acquire a second concentration signal sc2 obtained from the second concentration sensor 52c and a second flow rate signal sf2 obtained from the second flow rate sensor 52f. The processing unit 71 can derive a second concentration value Vc2 corresponding to the second concentration CN2 based on the second concentration signal sc2. The processing unit 71 can derive a second corrected conversion coefficient k2' by correcting a second conversion coefficient k2 relating to the relationship between the second flow rate signal sf2 and the second flow rate FL2 based on the second concentration value Vc2. The processing unit 71 can derive a second flow rate value Vf2 corresponding to the second flow rate FL2 based on the second flow rate signal sf2 using the second corrected conversion coefficient k2'.

[0140] The embodiment may include the following configurations (e.g., technical solutions). (Configuration 1) an acquisition unit capable of acquiring a first concentration signal obtained from a first concentration sensor capable of detecting a first concentration of a first target substance contained in a first output gas, and a first flow rate signal obtained from a first flow rate sensor capable of detecting a first flow rate of the first output gas; a processing unit; Equipped with the processing unit is capable of deriving a first concentration value corresponding to the first concentration based on the first concentration signal; the processing unit is capable of deriving a first corrected conversion coefficient obtained by correcting a first conversion coefficient relating to a relationship between the first flow rate signal and the first flow rate based on the first concentration value; The data processing device, wherein the processing unit is capable of deriving a first flow rate value corresponding to the first flow rate based on the first flow rate signal using the first corrected conversion coefficient.

[0141] (Configuration 2) 2. The data processing device according to claim 1, wherein an absolute value of a difference between a time when the acquisition unit acquires the first concentration signal from the first concentration sensor and a time when the acquisition unit acquires the first flow rate signal from the first flow rate sensor is 10 seconds or less.

[0142] (Configuration 3) 3. The data processing device of claim 1, wherein at least a portion of the first concentration sensor has a MEMS structure.

[0143] (Configuration 4) the first output gas is output from a gas converting unit; 4. The data processing device according to any one of configurations 1 to 3, wherein the gas converting section is capable of converting at least a portion of an input gas containing a first substance into the first output gas.

[0144] (Configuration 5) the input gas further comprises a second substance; the first substance includes carbon dioxide; 5. The data processing device of claim 4, wherein the second substance includes hydrogen.

[0145] (Configuration 6) 6. The data processing apparatus of claim 5, wherein the first output gas comprises at least one selected from the group consisting of methane, water, carbon dioxide, and hydrogen.

[0146] (Configuration 7) the acquisition unit is further capable of acquiring a second concentration signal obtained from a second concentration sensor capable of detecting a second concentration of a second target substance contained in the second output gas, and a second flow rate signal obtained from a second flow rate sensor capable of detecting a second flow rate of the second output gas, the processing unit is capable of deriving a second concentration value corresponding to the second concentration based on the second concentration signal; the processing unit is capable of deriving a second corrected conversion coefficient obtained by correcting a second conversion coefficient relating to a relationship between the second flow rate signal and the second flow rate based on the second concentration value; 4. The data processing device according to any one of configurations 1 to 3, wherein the processing unit is capable of deriving a second flow rate value corresponding to the second flow rate based on the second flow rate signal using the second corrected conversion coefficient.

[0147] (Configuration 8) 8. The data processing device of claim 7, wherein the absolute value of the difference between the time when the acquisition unit acquires the second concentration signal from the second concentration sensor and the time when the acquisition unit acquires the second flow rate signal from the second flow rate sensor is 10 seconds or less.

[0148] (Configuration 9) 9. The data processing device of configuration 7 or 8, wherein at least a portion of the second concentration sensor has a MEMS structure.

[0149] (Configuration 10) the second output gas is output from the gas converting section; 10. The data processing device according to any one of configurations 7 to 9, wherein the gas converting unit is capable of converting at least a portion of an input gas containing a first substance into the first output gas and the second output gas.

[0150] (Configuration 11) the gas converting unit generates the first output gas and the second output gas from the first substance using an electrolyte; 11. The data processing device of claim 10, wherein the first substance includes carbon dioxide.

[0151] (Configuration 12) the first output gas comprises at least one selected from the group consisting of carbon monoxide, hydrogen, water, and carbon dioxide; 12. The data processing apparatus of claim 11, wherein the second output gas includes at least one selected from the group consisting of carbon dioxide, oxygen, water, and hydrogen.

[0152] (Configuration 13) A data processing device according to any one of configurations 1 to 6; the first concentration sensor; the first flow sensor; a gas conversion unit; Equipped with the first output gas is output from the gas converting unit; the first concentration sensor includes a first detection unit including a first detection element, a second detection unit including a second detection element, a third detection unit including a third detection element, and a substrate; the substrate includes a first substrate region, a second substrate region, and a third substrate region; a first gap is provided between the first substrate region and the first detection element; a second gap is provided between the second substrate region and the second detection element; A third gap is provided between the third substrate region and the third sensing element.

[0153] (Configuration 14) the first detection unit further includes a first support unit and a first connection unit; the first support portion is fixed to the base, the first connection portion is supported by the first support portion, the first connection portion supports the first detection element; the first detection portion has a first area of ​​the first detection element, a first connection length of the first connection portion, a first connection width of the first connection portion, a first connection thickness of the first connection portion, a first connection material of the first connection portion, and a first distance, the first distance being a distance between the first substrate region and the first detection element; the second detection unit further includes a second support unit and a second connection unit; the second support portion is fixed to the base, the second connection portion is supported by the second support portion, the second connection portion supports the second detection element; the second detection portion has at least one of a second area of ​​the second detection element that is different from the first area, a second connection length of the second connection portion that is different from the first connection length, a second connection width of the second connection portion that is different from the first connection width, a second connection thickness of the second connection portion that is different from the first connection thickness, a second connection material of the second connection portion that is different from the first connection material, and a second distance that is different from the first distance, wherein the second distance is a distance between the second base region and the second detection element, the third detection element includes a third resistive member, a third other resistive member, and a third conductive member; 14. The gas conversion system of claim 13, wherein the third conductive member is between the third resistive member and the third other resistive member.

[0154] (Configuration 15) 15. The gas conversion system of claim 13 or 14, wherein the gas conversion unit is capable of converting at least a portion of an input gas containing a first substance into the first output gas.

[0155] (Configuration 16) the input gas further comprises a second substance; the first substance includes carbon dioxide; 16. The gas conversion system of claim 15, wherein the second substance comprises hydrogen.

[0156] (Configuration 17) 17. The gas conversion system of claim 16, wherein the first output gas comprises at least one selected from the group consisting of methane, water, carbon dioxide, and hydrogen.

[0157] (Configuration 18) 18. The gas conversion system of any one of configurations 13 to 17, wherein the first output gas passes through the first concentration sensor after passing through the first flow sensor.

[0158] (Configuration 19) Further comprising a gas conversion control unit, 19. The gas conversion system according to any one of configurations 13 to 18, wherein the gas conversion control unit is capable of controlling the gas conversion unit based on at least one of the first concentration value and the first flow rate value derived by the processing unit.

[0159] (Configuration 20) Further comprising a second concentration sensor and a second flow rate sensor; A second output gas is further output from the gas conversion unit, the second concentration sensor is capable of detecting a second concentration of a second target substance contained in the second output gas; the second flow sensor is capable of detecting a second flow rate of the second output gas; the acquisition unit is further capable of acquiring a second concentration signal obtained from the second concentration sensor and a second flow rate signal obtained from the second flow rate sensor, the processing unit is capable of deriving a second concentration value corresponding to the second concentration based on the second concentration signal; the processing unit is capable of deriving a second corrected conversion coefficient obtained by correcting a second conversion coefficient relating to a relationship between the second flow rate signal and the second flow rate based on the second concentration value; A gas conversion system described in any one of configurations 13 to 19, wherein the processing unit is capable of deriving a second flow rate value corresponding to the second flow rate based on the second flow rate signal using the second corrected conversion coefficient.

[0160] According to the embodiments, it is possible to provide a data processing device and a gas conversion system that can improve characteristics.

[0161] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements included in the gas conversion system, such as the substrate, detection unit, processing unit, and gas conversion unit, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0162] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0163] In addition, all data processing devices and gas conversion systems that can be implemented by a person skilled in the art by appropriately modifying the design based on the data processing device and gas conversion system described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0164] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0165] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0166] 10A to 10C: first to third detection units, 11 to 13...first to third resistance members, 13a...third other resistance member, 11E to 13E: first to third detection elements, 15a~15d...1st~4th layer, 18A to 18C: first to third insulating members, 21 to 23...first to third conductive members, 31C to 33C: 1st to 3rd connection parts, 31S~33S...1st~3rd support part, 31aC to 33aC...first to third other connection parts, 31aS~33aS...1st~3rd other support parts, 31bC, 31cC, 32bC, 32cC...connection parts, 31bS, 31cS, 32bS, 32cS...Support part, 41...Base body, 41a to 41c...first to third base regions, 41i...insulating film, 41s...board, 50...sensor device, 50H...casing, 50I...inlet, 50O...outlet, 51c, 52c...first and second concentration sensors, 51f, 52f...First and second flow rate sensors, 51h...heater, 70...control unit, 71...processing unit, 72...Acquisition Department, 75...gas conversion control section, 79b...display section, 79c...input section, 80...gas conversion unit, 80O...outflow section, 80I...input section, 80M...input gas, 80Oa...first output section, 80Ob...second output section, 80a...first substance, 80b…Second substance, 81...Detection target gas, 81a...first output gas, 81am...First target substance, 81b...second output gas, 81bm...second target substance, 84...electrolyte, 110, 110A~110C, 111, 120~122...sensors, 310, 311...Gas conversion system, 710...Data processing device, CN1, CN2...1st, 2nd concentration, Ds1~Ds3...1st to 3rd data, FL1, FL2...1st, 2nd flow rate, L1, L2...first and second lengths, LC1, LC2... 1st and 2nd connection lengths, P1 to P4: 1st to 4th processes, Rv1~Rv3...1st to 3rd values, Rx3: third other value, S1, S2...first and second areas, Vc1, Vc2...first and second density values, Vf1, Vf2: First and second flow rate values, d1, d2...first and second distances, g1~g3...1st~3rd gap, i1, i2...first and second currents, sc1, sc2...first and second concentration signals, sf1, sf2...1st, 2nd flow signal, t1, t2...first and second connection thickness, w1, w2...first and second connection widths

Claims

[Claim 1] an acquisition unit capable of acquiring a first concentration signal obtained from a first concentration sensor capable of detecting a first concentration of a first target substance contained in a first output gas, and a first flow rate signal obtained from a first flow rate sensor capable of detecting a first flow rate of the first output gas; a processing unit; Equipped with the processing unit is capable of deriving a first concentration value corresponding to the first concentration based on the first concentration signal; the processing unit is capable of deriving a first corrected conversion coefficient obtained by correcting a first conversion coefficient relating to a relationship between the first flow rate signal and the first flow rate based on the first concentration value; The data processing device, wherein the processing unit is capable of deriving a first flow rate value corresponding to the first flow rate based on the first flow rate signal using the first corrected conversion coefficient.

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