Light emitting device

Abstract

To easily provide a flexible light-emitting device having a long life. It is another object of the present invention to provide a long-life and inexpensive electronic device using the flexible light-emitting device.SOLUTION: A light-emitting element including a substrate having flexibility and transmittance of visible light, a first adhesive layer provided on the substrate, an insulating film containing nitrogen and silicon and located on the first adhesive layer, a first electrode, a second electrode facing the first electrode, and an EL layer provided between the first electrode and the second electrode, a second adhesive layer formed on the second electrode, and a metal substrate provided on the second adhesive layer; A flexible light-emitting device in which the thickness of a metal substrate is greater than or equal to 10 μm and less than or equal to 200 μ m, and an electronic device using the flexible light-emitting device are provided.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device and a method for manufacturing the same. Regarding child devices. [Background technology]

[0002] In recent years, the development of display technology has been remarkable, especially in terms of high definition and thinness. This has also been driven by the needs of the field, and remarkable progress has been made.

[0003] The next phase in this field is flexible displays that can reproduce curved surfaces. There has been much attention paid to commercializing flexible displays, and various proposals have been made regarding flexible displays. Furthermore, light-emitting devices using flexible substrates are not suitable for glass substrates (see, for example, Patent Document 1). It is possible to make it much lighter than when using a gas or other material.

[0004] However, the biggest challenge in putting such flexible displays to practical use is their lifespan. is located.

[0005] This is a substrate that supports the light emitting element and protects the element from external moisture and oxygen. , a glass substrate that does not have flexibility cannot be used, and a flexible substrate that has high water permeability, This is because a plastic substrate with low heat resistance must be used. Since the heat resistance of the stick substrate is low, it is not possible to create a high-quality protective film by applying high temperatures. First of all, moisture penetration from the plastic substrate side can shorten the life of the light emitting element and ultimately the light emitting device. For example, Non-Patent Document 1 describes polyethersulfone (PE A light-emitting element was fabricated on a substrate based on SiO2 and sealed with an aluminum film. An example of a flexible light-emitting device has been introduced, but its lifespan is only about 230 hours. In Non-Patent Documents 2 and 3, a light-emitting element is formed on a stainless steel substrate. An example of a flexible light-emitting device using a polymer has been introduced. Although the penetration of moisture from the light emitting element side is suppressed, the penetration of moisture from the light emitting element side is not effectively prevented. Therefore, flexible light-emitting devices are fabricated on stainless steel substrates, and light-emitting elements The side of the device is covered with a sealing film made of multiple layers of materials, which improves the device's lifespan. We are trying to do so.

[0006] In addition, thin metal films such as aluminum films and stainless steel substrates have low flexibility and water permeability. However, at normal thicknesses, it does not transmit visible light, making it difficult to use in light-emitting devices. In this case, the use is limited to only one of the pair of substrates sandwiching the light emitting element. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-204049 [Non-patent literature]

[0008] [Non-Patent Document 1] Gi Heon Kim et al., IDW'03, 2003, pp. 387-390 [Non-patent document 2] Dong Un Jin et al., SID 06 DIGEST, 2006, p.1855-p.1857 [Non-patent document 3] Anna Chwang et al., SID 06 DIGEST, 2006, p.1858-p.1861 Summary of the Invention [Problem to be solved by the invention]

[0009] The short lifespan of Non-Patent Document 1 is due to moisture entering from the top, which is sealed with an aluminum film. Although the penetration was suppressed, it was not possible to prevent the penetration of moisture from the PES substrate side. Furthermore, the heat resistance of the light emitting element used in such a light emitting device is also low. Therefore, it is also difficult to form a good quality protective film after forming the light emitting element.

[0010] Non-patent documents 2 and 3 state that the lifespan of a light-emitting device sandwiched between glass substrates is about the same as that of a light-emitting device sandwiched between glass substrates. This is because, as mentioned earlier, layers of multiple materials are repeatedly stacked. This is achieved by using a layered sealing film, which results in poor productivity. If it's bad, the price will increase accordingly, so this isn't very realistic.

[0011] In this way, flexible light-emitting devices require a heat-resistant substrate that is more heat-resistant than the glass substrates that have been used conventionally. Since a plastic substrate with low mechanical strength is used, a dense protective film formed at high temperature can be used. The sealing film used to compensate for this is It was very unproductive.

[0012] In addition, flexible light-emitting devices use plastic substrates, which makes them more flexible than glass substrates. Therefore, if static electricity is discharged from the human body, the flexible There is a risk that charges will accumulate in the light-emitting device, causing malfunctions due to static electricity.

[0013] In view of the above, an object of one embodiment of the present invention is to easily provide a flexible light-emitting device with a long lifetime. Another object of the present invention is to provide an electronic device using the flexible light-emitting device. Another object of the present invention is to provide a flexible light-emitting device that is protected against static electricity. It shall be one of the following. [Means for solving the problem]

[0014] The above problem is solved by forming a film having sufficiently low water permeability on a highly heat-resistant substrate such as a glass substrate. A protective film is formed at a suitable temperature, and necessary components such as the electrodes of the TFT and light-emitting element or the light-emitting element are protected. After forming the protective film, they are transferred to a plastic substrate together with the protective film, and finally, adhesive is used. This problem can be solved by a flexible light-emitting device fabricated by bonding a metal substrate to the This can be done.

[0015] That is, one of the inventions disclosed in this specification is a method for producing a film having flexibility and transparency to visible light. a substrate having a first adhesive layer provided on the substrate; and a nitrogen atomizer located on the first adhesive layer. an insulating film containing silicon, a first electrode formed on the insulating film, and a metal film facing the first electrode; A light-emitting element including a second electrode and an EL layer provided between the first electrode and the second electrode. a second adhesive layer formed on the second electrode; and a metal substrate provided on the second adhesive layer. a flexible light-emitting device having a metal substrate with a thickness of 10 μm or more and 200 μm or less is.

[0016] Furthermore, one aspect of the invention disclosed in this specification is a flexible, visible light-transmitting film. a substrate having a first adhesive layer provided on the substrate; and a nitrogen and an insulating film containing silicon, a TFT forming layer provided on the insulating film, and a TFT forming layer provided on the TFT forming layer a first electrode electrically connected to a part of the TFT; a second electrode facing the first electrode; a light-emitting element including an EL layer provided between the first electrode and the second electrode; a second adhesive layer formed on the metal substrate; and a metal substrate provided on the second adhesive layer. The flexible light-emitting device has a metal substrate with a thickness of 10 μm or more and 200 μm or less.

[0017] Furthermore, one aspect of the invention disclosed in this specification is a method for forming a TFT layer in the above-described structure. The active layer of the TFT is made of crystalline silicon, making it a flexible light-emitting device. .

[0018] Furthermore, one aspect of the invention disclosed in this specification is the flexible light-emitting device described above. The display device has a pixel portion including a plurality of light-emitting elements and a driver circuit portion provided outside the pixel portion. A flexible light-emitting device in which an operating circuit section is configured by a TFT formed on a TFT forming layer is.

[0019] Furthermore, one aspect of the invention disclosed in this specification is a method for manufacturing a light-emitting element having the above structure, wherein the second electrode of the light-emitting element is a and a second adhesive layer.

[0020] Furthermore, one aspect of the invention disclosed in this specification is a method for manufacturing a semiconductor device according to the above configuration, wherein the metal substrate is stainless steel. A flexible member made of a material selected from aluminum, copper, nickel, and aluminum alloys. It is a blue light emitting device.

[0021] Furthermore, one aspect of the invention disclosed in this specification is the above-mentioned structure, wherein the first adhesive layer is one selected from epoxy resin, acrylic resin, silicone resin, and phenolic resin, or This is a flexible light-emitting device made of multiple materials.

[0022] In addition, one of the inventions disclosed in this specification is that in the above-mentioned configuration, the second adhesive layer is one selected from epoxy resin, acrylic resin, silicone resin, and phenolic resin, or This is a flexible light-emitting device made of multiple materials.

[0023] Furthermore, one aspect of the invention disclosed in this specification is a method for manufacturing a semiconductor device having the above-mentioned structure, in which a resin is further provided on the metal substrate. A flexible light-emitting device provided with an oil layer.

[0024] Furthermore, one aspect of the invention disclosed in this specification is that, in the above-mentioned configuration, the resin layer is an epoxy resin. Choose from oil, acrylic resin, silicone resin, phenolic resin, or polyester resin. Thermosetting resins consisting of one or more of the following, or polypropylene, polyethylene, Polycarbonate, polystyrene, polyamide, polyether ketone, fluororesin, or contains one or more thermoplastic resins selected from polyethylene naphthalate It is a flexible light-emitting device.

[0025] Furthermore, one aspect of the invention disclosed in this specification is to provide a flexible optical fiber having the above-mentioned structure and being resistant to visible light. At least one of a substrate having light-transmitting properties, a first adhesive layer, a second adhesive layer, and a resin layer The flexible light-emitting device further includes a fibrous body.

[0026] Furthermore, one aspect of the invention disclosed in this specification is to provide a flexible optical fiber having the above-mentioned structure and being resistant to visible light. A film having low water permeability is formed between a substrate having light transmissivity and a first adhesive layer. It is a flexible light-emitting device.

[0027] In addition, one of the inventions disclosed in this specification is that the membrane having low water permeability in the above-mentioned configuration is made of silica. A flexible light-emitting device comprising a film containing aluminum and nitrogen or a film containing aluminum and nitrogen. It is a location.

[0028] Furthermore, one aspect of the invention disclosed in this specification is to provide a flexible optical fiber having the above-mentioned structure and being resistant to visible light. The substrate has a coating film on the surface opposite to the surface facing the metal substrate. It is a flexible light-emitting device.

[0029] Furthermore, one aspect of the invention disclosed in this specification is that, in the above-mentioned configuration, the coating film is The flexible light-emitting device is a film having high hardness and transparency to light. In this case, if a conductive film that is transparent to visible light is used as the coating film, the flexible substrate will be protected from static electricity. The sible light emitting device can be protected.

[0030] Furthermore, one aspect of the invention disclosed in this specification is a flexible light-emitting device having the above-described configuration. It is an electronic device used in the

[0031] Furthermore, one aspect of the present invention disclosed in this specification is a method for forming a release layer on a substrate, forming an insulating film containing nitrogen and silicon on the insulating film; forming a first electrode on the first electrode; A partition wall is formed to cover the end of the first electrode, and a temporary support substrate is bonded onto the first electrode and the partition wall. The insulating film, the first electrode, the partition wall, and the temporary support substrate are peeled off between the peeling layer and the insulating film. The insulating film is then separated from the substrate by the above method, and the first adhesive layer is applied to the surface of the insulating film exposed by the separation. A substrate having flexibility and transparency to visible light is bonded to the substrate, and the temporary support substrate is removed. The surface of the first electrode is exposed, and an EL layer containing an organic compound is formed to cover the exposed first electrode. A second electrode is formed covering the EL layer, and a second adhesive layer is applied to the surface of the second electrode. A method for manufacturing a flexible light-emitting device by bonding a metal substrate having a thickness of 10 μm to 200 μm is.

[0032] Furthermore, one aspect of the present invention disclosed in this specification is a method for forming a release layer on a substrate, An insulating film containing nitrogen and silicon is formed on the insulating film, and a TFT forming layer containing a plurality of TFTs is formed on the insulating film. and electrically connecting the TFTs on the TFT forming layer to some of the TFTs provided on the TFT forming layer. A first electrode is formed, a partition wall is formed to cover an end of the first electrode, and a metal film is formed on the first electrode and the partition wall. A temporary support substrate is attached, and the insulating film, the TFT formation layer, the first electrode, the partition wall, and the temporary support substrate are peeled off. The film is separated from the substrate by peeling between the delamination layer and the insulating film, and the exposed film is A substrate having flexibility and transparency to visible light is attached to the surface of the insulating film using a first adhesive layer. The temporary support substrate is then removed to expose the surface of the first electrode, and the exposed first electrode is covered with a An EL layer containing an organic compound is formed by the above method, and a second electrode is formed to cover the EL layer. A metal substrate having a thickness of 10 μm or more and 200 μm or less is bonded to the surface of the adhesive layer using a second adhesive layer. This is a method for manufacturing a flexible light-emitting device.

[0033] Furthermore, one of the inventions disclosed in this specification is a method for manufacturing a semiconductor device by adhering a metal substrate to the semiconductor device. After that, a resin layer is formed on the metal substrate.

[0034] Furthermore, one aspect of the invention disclosed in this specification is a method for manufacturing a semiconductor device comprising: The method for manufacturing a flexible light-emitting device includes forming a sealing layer.

[0035] In addition, one of the inventions disclosed in this specification is that the insulating film is formed by a plasma CVD method. This is a method for manufacturing flexible light-emitting devices in which films are formed under temperature conditions of 50°C or higher and 400°C or lower. [Effects of the Invention]

[0036] The light-emitting device according to one embodiment of the present invention is flexible, has a long life, and can be easily manufactured. Furthermore, one embodiment of the present invention is a flexible light-emitting device that can be manufactured. It is possible to provide a manufacturing method that enables a blue light-emitting device to be manufactured. [Brief explanation of the drawings]

[0037] [Figure 1] 1A to 1C illustrate a light-emitting device according to an embodiment. [Figure 2] 1A to 1C illustrate a light-emitting device according to an embodiment. [Figure 3] 2A to 2C illustrate a manufacturing process of a light-emitting device according to an embodiment. [Figure 4] 1A to 1C illustrate a light-emitting device according to an embodiment. [Figure 5] 1A to 1C illustrate electronic devices according to an embodiment. [Figure 6] 1A to 1C illustrate a structure of a light-emitting element according to an embodiment. [Figure 7] 1A and 1B are diagrams illustrating a light-emitting device according to an embodiment. [Figure 8] 1A and 1B are diagrams illustrating a light-emitting device according to an embodiment. [Figure 9] 1A and 1B are diagrams illustrating a light-emitting device according to an embodiment. [Figure 10] 1A and 1B are diagrams illustrating a light-emitting device according to an embodiment. [Figure 11] 1A to 1C illustrate a light-emitting device according to an embodiment. [Figure 12] 1A to 1C illustrate a light-emitting device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0038] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. It is to be understood that the invention may be practiced in various different ways without departing from the spirit and scope thereof. It will be readily understood by those skilled in the art that various changes can be made in form and detail. However, it should not be construed as being limited to the description of this embodiment.

[0039] (Embodiment 1) The light emitting device in this embodiment is formed on a substrate having high heat resistance such as glass or ceramic. The peeled layer (including the first electrode of the TFT or the light-emitting element, the light-emitting element, etc.) is peeled off through the peeling layer. After forming the layer to be peeled, the substrate and the layer to be peeled are separated at the separation layer. It is produced by adhering the peelable layer to a plastic substrate using an adhesive. A protective film with sufficiently low water permeability is provided on the higher plastic substrate side. In the light emitting device of the embodiment, a first adhesive layer is present between the plastic substrate and the protective film. In this specification, a plastic substrate is a substrate that is flexible and transparent to visible light. The plastic substrate is a substrate that is flexible and transparent to visible light. There are no particular restrictions on the plate, but polyethylene terephthalate (PET), polyethylene naphtha Polyester resins such as phthalate (PEN), polyacrylonitrile resins, polyimide resins Fat, polymethyl methacrylate resin, polycarbonate resin (PC), polyethersulfone Polyolefin resin (PES), polyamide resin, cycloolefin resin, polystyrene resin, Suitable examples of the resin include polyamide-imide resin and polyvinyl chloride resin. The adhesive layer 1 is made of a material that is transparent to visible light, such as an ultraviolet curing type. Various curing types such as light-curing adhesives, reaction-curing adhesives, heat-curing adhesives, and anaerobic adhesives Adhesives can be used. These adhesives include epoxy resin, acrylic resin, and silicone. Corn resin, phenolic resin, etc. are used. The protective film has low water permeability and is resistant to visible light. For example, a silicon nitride film, a silicon nitride oxide film, an acid film, or the like may be used. Examples of the insulating film include a silicon nitride film, and it is preferable to use an insulating film containing nitrogen and silicon.

[0040] A metal substrate is used as the substrate on the opposite side of the plastic substrate and the light emitting element. To ensure flexibility, the plate should have a thickness of 10 μm or more and 200 μm or less. A thickness of 20 μm or more and 100 μm or less is preferable because it has high flexibility. The material is not particularly limited, but may be aluminum, copper, nickel, or an aluminum alloy. Alternatively, a metal alloy such as stainless steel can be suitably used. It has very low water permeability and sufficient flexibility, but does not have transparency to visible light within this range of film thickness. Therefore, in the light emitting device of this embodiment, the side of the plastic substrate on which the TFT layer is provided is The light is emitted from the metal substrate, which is a so-called bottom emission type light emitting device. As with plastic substrates, the light emitting element is bonded to the substrate via an adhesive layer, so the first A second adhesive layer is present between the second electrode or film sealing layer and the metal substrate. The adhesive layer material can be a reactive curing adhesive, a thermosetting adhesive, or an anaerobic adhesive. The adhesive material can be epoxy resin, acrylic resin, silicone, etc. Resins such as styrene resin and phenol resin are used.

[0041] The flexible light-emitting device according to this embodiment has a high water permeability. A water-permeable plastic substrate is fabricated by applying a temperature higher than the heat resistance temperature of the plastic substrate. Since a protective film with sufficiently low moisture resistance is provided, the influence of moisture penetrating from the plastic substrate side is reduced. In addition, the light emitting element is sandwiched between the plastic substrate and the opposite side. By using a metal substrate that has sufficient flexibility and low water permeability as the sealing substrate, As a result, the influence of moisture intrusion from the sealing substrate side can be effectively suppressed. Effectively reduces moisture penetration on both sides of the light-emitting element without stacking many films. Therefore, the flexible light-emitting device of this embodiment can be easily fabricated. It can be said that the flexible light-emitting device has a long life and can be manufactured.

[0042] The peeled layer formed on the production substrate may contain a protective film as well as TFTs, light-emitting elements, etc. As for TFTs, there are TFTs using amorphous silicon and TFTs using oxide semiconductors. Not only can TFT be manufactured without applying high heat, but also TFT can be manufactured on a highly heat-resistant substrate. This allows the creation of materials that require a certain degree of heating or laser processing, such as crystalline silicon. It is also possible to fabricate a TFT using an amorphous semiconductor layer. The flexible light-emitting device is an active matrix type frame having a TFT using a crystalline semiconductor. It is possible to use a TFT that uses a crystalline semiconductor. Therefore, it is possible to build the drive circuit and CPU on the same substrate as the pixel unit, and it is also possible to build a separate drive circuit. Flexible light-emitting devices that are far more advantageous in terms of cost and manufacturing process than devices that use a circuit or CPU. It is also possible to create the following.

[0043] 1A to 1C show diagrams illustrating a light-emitting device according to this embodiment.

[0044] FIG. 1(A) shows an example of a flexible light-emitting device provided with a driver circuit section and pixel TFTs. A first adhesive layer 111 is provided on a plastic substrate 110. 1 bonds a protective film 112 to a plastic substrate 110. The base insulating film 113, the pixel TFT 114, the TFT 115 of the driving circuit section, and the pixel TFT 114 are electrically connected. The first electrode 117 of the light emitting element is electrically connected to the partition wall 11 covering the end of the first electrode 117. 1A shows a part of them. The first electrode 117 exposed from the wall 118 and the organic compound formed at least covering the first electrode 117. The light emitting device includes an EL layer 119 including a material and a second electrode 120 provided to cover the EL layer 119 . A metal substrate 122 is adhered onto the second electrode 120 using a second adhesive layer 121. It is not necessary to provide a drive circuit. In FIG. 1A, the peeled layer 116 includes a protective film 112, a base insulating film 113, and a pixel TFT 114, TFT 115 of the driving circuit section, first interlayer insulating film 128, second interlayer insulating film 129, the first electrode 117 and the partition wall 118. However, the elements that make up the peeled layer 116 are not limited to this example.

[0045] Figure 1(B) shows an example of a passive matrix flexible light-emitting device. Similarly, a first adhesive layer 111 is provided on a plastic substrate 110. The adhesive layer 111 bonds the peeled layer 116 to the plastic substrate 110. 6 is provided with a protective film 112, a first electrode 117 of the light-emitting element, and a partition wall 118. The light emitting element 127 has a first electrode exposed from the partition wall 118. 117, and an EL layer 119 containing an organic compound formed to cover at least the EL layer 117, and an EL layer The second electrode 120 is provided in a stripe shape covering the first electrode 119. A metal substrate 122 is attached on top of the second adhesive layer 121. In FIG. The peeled layer 116 includes at least a protective film 112, a first electrode 117, and a partition wall 118. However, this is an example that is easy to fabricate, and the elements that constitute the peeled layer 116 In FIG. 1B, the shape of the partition wall 118 is a forward tapered passive element. Although an example of a passive matrix light emitting device has been shown, a reverse tapered passive matrix light emitting device may also be used. In this case, the EL layer 119 and the second electrode 118 may be separated by the taper of the partition wall 118. 120 can be formed separately, so that the film formation can be patterned using a mask. There is no need to do this.

[0046] As shown in FIG. 1C, a resin layer 123 is further provided on the metal substrate 122. Alternatively, the adhesive layer 122 may be in contact with the first adhesive layer 111 of the plastic substrate 110. A coating film 124 is provided on the opposite side of the surface to be coated to protect the surface of the plastic substrate from pressure and scratches. Alternatively, the plastic substrate 110 may be provided with a protective film 125 having low water permeability. By using a substrate on which a film is formed or by providing a film sealing layer 126 on the second electrode 120, The resin layer 123 may be made of an epoxy resin, Thermosetting resins such as acrylic resin, silicone resin, phenolic resin, polyester resin, etc. One or more resin materials selected from the group consisting of polypropylene, polyethylene, and polypropylene. Carbonate, polystyrene, polyamide, polyether ketone, fluororesin, polyethylene Using one or more resin materials selected from thermoplastic resins such as ethylene naphthalate The coating film 124 can be formed by using an organic film, an inorganic film, or both. It can be formed of various materials, such as a laminated film using a soft plastic substrate 110 Hard coating films (such as silicon nitride films) that can protect the surface from scratches, etc. It refers to a film made of a material that can disperse pressure (for example, an aramid resin film). The plastic film 124 is preferably a film that is transparent to visible light and has high hardness. The protective film 125 and the film sealing layer 126 formed in advance on the back substrate are made of, for example, silicon nitride. A film containing nitrogen and silicon, such as a silicon nitride oxide film, can be used.

[0047] The flexible light-emitting device in FIG. 1C is formed by a protective film 112 and a metal substrate 122. Since the penetration of moisture from the substrate surface direction is effectively suppressed, the protective film 125 or the film sealing The layer 126 is an effective structure in the sense that it further reduces water permeability. The layer 123, the coating film 124, the protective film 125, and the film sealing layer 126 are each applied alone. It is also possible to apply one or more or all of them. Also, Figure 1(C) is based on Figure 1(A). These configurations can of course be used in combination with Figure 1(B). .

[0048] Although only one light emitting element 127 is shown in FIGS. 1A to 1C, it can be used to display an image. When the flexible light-emitting device according to the present embodiment is used for a display, A pixel portion having a plurality of light emitting elements 127 is formed. In this case, it is necessary to obtain at least three colors of light: red, green, and blue. A method of painting the necessary parts of the EL layer 119 for each color, and making all light-emitting elements white-emitting. A method of obtaining each color by passing light through a color filter layer, There are methods for obtaining different colors by using blue or shorter wavelength light and passing it through a color conversion layer. .

[0049] 2(A) to 2(D) illustrate a method for providing a color filter layer or a color conversion layer. In FIG. 2(A) to (D), 300 is a color filter layer (or a color The barrier film 301 is a color filter layer 300 ( or color conversion layer) to prevent the light emitting element and TFT from being affected by the gas generated from the The color filter layer 300 (or The color conversion layer (color conversion layer) corresponds to the light emitting element 127 and is provided for each color. The filter layers are arranged in the opening region of the light emitting element 127 (where the first electrode, the EL layer, and the second electrode are directly overlapped). The color filter layer 300 and the backlight 302 may overlap at a location other than the overlapping portion. The rear film 301 may be formed only in the pixel section, or may be formed in the drive circuit section as well.

[0050] In FIG. 2(A), after forming the electrode 307 of the TFT, a color film is formed on the interlayer insulating film 304 of the TFT. A color filter layer 300 is formed, and the steps caused by the color filter layer are flattened by an organic insulating film. Then, a contact hole is formed in the planarization film 306. An electrode 305 is formed to connect the first electrode 117 of the optical element and the electrode 307 of the TFT. This is an example in which a first electrode 117 of the element is provided. may be set.

[0051] Also, as shown in FIG. 2(B), a color filter layer 300 may be provided under the interlayer insulating film 304. In FIG. 2(B), after the barrier film 301 is formed, a color filter is formed on the barrier film 301. Then, an interlayer insulating film 304 and a TFT electrode 305 are formed. This is an example in which a first electrode 117 of an optical element is provided.

[0052] 2(A) to 2(D) show only one color filter layer (or color conversion layer). Although not yet implemented, red, blue, and green color filter layers (or color conversion layers) are used in light-emitting devices. ) are formed in a predetermined arrangement and shape. Color filter layer (or color conversion layer) The array patterns include stripe array, diagonal mosaic array, and triangular mosaic array. In addition, when a white light emitting element and a color filter layer are used, Alternatively, an RGBW 4-pixel array may be used. An RGBW 4-pixel array is a pixel array consisting of three colors: red, blue, and green. - A pixel arrangement having pixels with a filter layer and pixels without a color filter layer This is effective in reducing power consumption. Contains green light and is compatible with NTSC (National Television Standard) It is preferable that the configuration includes red, blue, and green lights as defined by the IPS Committee. stomach.

[0053] The color filter layer can be formed using known materials. When using photosensitive resin, the color filter layer itself is exposed to light and developed to form the pattern. However, since the pattern is very fine, the pattern is formed by dry etching. It is preferable.

[0054] FIG. 2C shows a state where a color filter substrate 302 on which a color filter layer 300 is provided is placed. The color filter layer 300 of the color filter substrate 302 is formed. When the surface of the film that is not covered by the adhesive is attached to the plastic substrate 110 using the first adhesive layer 111, The color filter substrate 302 is provided with a coating to protect the color filter layer 300 from scratches. The coating film 303 may be made of a material that is transparent to visible light. The same material as the coating film 124 can be used. The side of the filter substrate 302 on which the color filter layer 300 is formed is connected to the plastic substrate 110. The color filter substrate 302 may be a flexible and visible substrate. Various substrates that are transparent to light, such as plastic substrates 110, are made of the same material as the substrate. A filter layer 300 is formed.

[0055] FIG. 2(D) shows a color filter layer 300 previously provided on a plastic substrate 110. The filter substrate 302 is directly bonded to the peeled layer 116 having the first electrode. This is an example of a color filter device comprising a plastic substrate 110 on which a color filter layer 300 is provided. The filter substrate 302 is directly attached to the peeled layer 116 having the first electrode. This reduces the number of parts and reduces manufacturing costs. In addition, a black matrix is ​​installed between each light-emitting element. Alternatively, other known configurations may be applied.

[0056] Next, as an example, a flexible light-emitting device having a TFT according to the present embodiment will be fabricated. The method will be explained using FIGS. 3(A) to 3(E) and FIGS. 1(A) to 1(C).

[0057] First, a TFT and a first electrode are formed on a substrate 200 having an insulating surface via a release layer 201. A peeled layer 116 including a pole 117 and the like is formed (see FIG. 3(A)).

[0058] The substrate 200 may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or a surface Heat-resistant enough to form a good protective film, such as a metal substrate with an insulating layer on its surface A highly conductive substrate can be used.

[0059] The substrate used is a substrate with little flexibility, such as that used in ordinary display manufacturing. Therefore, it is possible to provide high-definition pixel TFTs.

[0060] The peeling layer 201 is formed by sputtering, plasma CVD, coating, printing, or the like. W, Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (N b), Nickel (Ni), Cobalt (Co), Zirconium (Zr), Zinc (Zn), Ru Ruthenium (Ru), Rhodium (Rh), Palladium (Pd), Osmium (Os), Iridium an element selected from the group consisting of iridium (Ir) and silicon (Si), or an alloy material containing such an element as its main component; Alternatively, a layer made of a compound material containing silicon as a main component is formed as a single layer or a stacked layer. The crystal structure of the layer containing the silicon dioxide may be amorphous, microcrystalline, or polycrystalline. The coating methods include spin coating, droplet ejection, dispensing, and nozzle printing. This includes the slot die coating method.

[0061] When the release layer 201 has a single layer structure, it is preferably a tungsten layer, a molybdenum layer, or a titanium layer. A layer containing a mixture of tungsten and molybdenum is formed. Alternatively, a layer containing tungsten oxide or a layer containing an oxynitride, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten A layer containing an oxide or oxynitride of a mixture of titanium and molybdenum is formed. The mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum. do.

[0062] When the peeling layer 201 has a laminated structure, it is preferable that the first layer is a tungsten layer, the second layer is a molybdenum layer, and the third layer is a tungsten layer. A layer containing a mixture of tungsten and molybdenum is formed, and a second layer containing tungsten and molybdenum is formed. Oxides, nitrides, and oxynitrides of tungsten, molybdenum, or mixtures of tungsten and molybdenum Alternatively, a layer containing nitride oxide is formed.

[0063] The peeling layer 201 is a stacked structure of a layer containing tungsten and a layer containing tungsten oxide. In the case of forming a tungsten-containing layer, an insulating layer made of oxide is formed on the tungsten-containing layer. By forming the insulating layer, a layer containing tungsten oxide is formed at the interface between the tungsten layer and the insulating layer. This may be exploited by forming nitrides, oxynitrides, and nitrides of tungsten. The same applies to the case where a layer containing tungsten oxide is formed. After forming a layer containing tungsten, A silicon nitride layer, a silicon oxynitride layer, or a silicon nitride oxide layer may be formed on the layer. The surface of the layer containing stainless steel is treated with a strong oxidizing agent such as thermal oxidation, oxygen plasma treatment, or ozone water. A layer containing tungsten oxide may be formed by treating with a liquid or the like. The treatment and heat treatment are carried out using oxygen, nitrogen, nitrous oxide, nitrous oxide alone, or the above gases in combination with The heating may be carried out in a mixed gas atmosphere with other gases.

[0064] Next, the layer to be peeled 116 is formed on the peeling layer 201. A protective film 112 is formed on the peeling layer 201. The protective film 112 is made of silicon nitride or silicon oxynitride. An insulating film containing nitrogen and silicon, such as silicon nitride oxide, is formed by plasma CVD, and then By setting the film formation temperature to 250°C to 400°C and other conditions to known conditions, It is possible to produce a dense membrane with very low water permeability.

[0065] Next, a base insulating film 113 is formed to stabilize the characteristics of the TFT to be fabricated later. The film 113 is an inorganic insulating film such as silicon oxide, silicon nitride, silicon oxynitride, or silicon nitride oxide. The protective film 112 can be used as a base film and can be fabricated as a single layer or multiple layers. If the base insulating film 113 can also serve as an insulating film for the second insulating film, the base insulating film 113 does not have to be formed.

[0066] The materials that form the semiconductor layer of the transistor are semiconductors such as silane and germane. Amorphous (hereinafter referred to as amorphous) is a material that is produced by vapor deposition or sputtering using material gas. (hereinafter referred to as "AS") semiconductor, the amorphous semiconductor is Crystallized polycrystalline semiconductor or microcrystalline (semi-amorphous or microcrystalline) (hereinafter referred to as "SAS") semiconductors, semiconductors whose main component is organic materials, etc. The semiconductor layer can be formed by sputtering, LPCVD, or plasma CVD. The film can be formed by the following methods.

[0067] The microcrystalline semiconductor layer is a quasi-stable layer between amorphous and single crystal, considering the Gibbs free energy. In other words, the third state is a stable state in terms of free energy. Conductive, with short-range order and lattice distortion. Columnar or needle-like crystals are formed on the substrate surface. Microcrystalline silicon, a typical example of a microcrystalline semiconductor, grows in the normal direction. The 520 cm spectrum indicates single-crystal silicon. -1 It is shifted to the lower wavenumber side than That is, 520 cm, which indicates single crystal silicon. -1 and 480 cm, which indicates amorphous silicon -1 The Raman spectrum of microcrystalline silicon has a peak between these two. At least 1 atomic % or more of hydrogen or halogen is used to terminate the ring bond. It also contains rare gas elements such as helium, argon, krypton, and neon. By further promoting lattice distortion through the annealing, stability is increased and a good microcrystalline semiconductor layer can be obtained. do.

[0068] This microcrystalline semiconductor layer is formed by a high-frequency plasma CVD method with a frequency of several tens to several hundreds of MHz, or Alternatively, it can be formed by a microwave plasma CVD method with a frequency of 1 GHz or more. For example, SiH4, Si2H6, SiH2Cl2, SiHCl3, SiCl4, SiF4 The silicon hydride can be diluted with hydrogen. In addition, one or more rare gases selected from helium, argon, krypton, and neon The silicon hydride layer can be formed by diluting with an element. The flow rate ratio of hydrogen is set to 5 times or more and 200 times or less, preferably 50 times or more and 150 times or less, and more preferably Preferably 100 times.

[0069] As an amorphous semiconductor, for example, hydrogenated amorphous silicon is used, and as a crystalline semiconductor, For example, polysilicon is used. Polysilicon (polycrystalline silicon) has 800 High-temperature polysilicon is the main material used for this process, which is formed through a process temperature of 100°C or higher. The main materials used are silicon and polysilicon formed at process temperatures below 600°C. The so-called low-temperature polysilicon is made by using elements that promote crystallization, and amorphous silicon is bonded to the Of course, as mentioned above, it is also possible to use microcrystalline semiconductors or Alternatively, a semiconductor containing a crystalline phase in a part of the semiconductor layer can be used.

[0070] The semiconductor layer material can be silicon (Si), germanium (Ge), or other simple substances. or compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, SiGe, etc. In addition, oxide semiconductors such as zinc oxide (ZnO) and tin oxide (SnO2 ), magnesium zinc oxide, gallium oxide, indium oxide, and the above oxide semiconductors For example, a semiconductor made of zinc oxide and indium can be used. An oxide semiconductor composed of aluminum oxide and gallium oxide can also be used. When zinc oxide is used for the semiconductor layer, the gate insulating layer is made of Y2O3, Al2O3, or TiO2 A stack of these materials may be used as a gate electrode layer, a source electrode layer, and a drain electrode layer. For the electrode, indium tin oxide (ITO), Au, Ti, etc. can be used. In or Ga can also be added. A transparent transistor using a thin film can also be used as the transistor in the pixel section. When a light emitting element is formed on such a transparent transistor, the area ratio of the light emitting element to the pixel is This allows for an increase in the aperture ratio, enabling the creation of high-brightness, high-resolution flexible display devices. In addition, the gate electrode, source electrode, and drain electrode of the transparent transistor can be formed by a visible light. When the conductive film that transmits light is used, the aperture ratio can be further increased.

[0071] When a crystalline semiconductor layer is used as the semiconductor layer, the crystalline semiconductor layer can be manufactured by various methods. Methods (laser crystallization, thermal crystallization, or using elements that promote crystallization such as nickel) In addition, the SAS microcrystalline semiconductor can be irradiated with laser to form a crystal. If no element that promotes crystallization is introduced, the material will be amorphous. Before irradiating the silicon film with laser light, it was heated at 500°C for 1 hour in a nitrogen atmosphere. The hydrogen concentration of the amorphous silicon film is 1×10 20 atoms / cm 3 Release to the following: This is because when a laser beam is irradiated onto an amorphous silicon film containing a large amount of hydrogen, the amorphous silicon film is destroyed. Because it will be put away.

[0072] As a method for introducing a metal element into an amorphous semiconductor layer, the metal element is introduced onto the surface of the amorphous semiconductor layer. There are no particular limitations on the method as long as it can be used to make the surface or interior thereof. For example, sputtering, CVD, etc. method, plasma treatment method (including plasma CVD method), adsorption method, method of applying a metal salt solution Among these, the method using a solution is simple and easy to use, and the concentration of the metal element can be adjusted. In addition, the wettability of the surface of the amorphous semiconductor layer is improved. In order to spread the aqueous solution over the entire surface of the amorphous semiconductor layer, UV light is used in an oxygen atmosphere. by irradiation, thermal oxidation, treatment with ozone water containing hydroxyl radicals or hydrogen peroxide, etc. Therefore, it is desirable to form an oxide film.

[0073] In addition, in the crystallization step of crystallizing the amorphous semiconductor layer to form the crystalline semiconductor layer, The crystallization-promoting element (also referred to as a catalytic element or metal element) is added to the body layer, and the layer is heat-treated (550 Crystallization may be carried out by heating at 500°C to 750°C for 3 minutes to 24 hours. The elements that can be used include iron (Fe), nickel (Ni), cobalt (Co), and ruthenium (Ru ), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) , platinum (Pt), copper (Cu) and gold (Au) can be done.

[0074] In order to remove or reduce the elements that promote crystallization from the crystalline semiconductor layer, A semiconductor layer containing an impurity element is formed in contact with the substrate, and functions as a gettering sink. As for pure elements, impurity elements that give n-type conductivity, impurity elements that give p-type conductivity, and rare gas elements For example, phosphorus (P), nitrogen (N), arsenic (As), antimony ( Sb), Bismuth (Bi), Boron (B), Helium (He), Neon (Ne), Argo One or more selected from the group consisting of argon (Ar), krypton (Kr), and xenon (Xe) are used. A crystalline semiconductor layer containing an element that promotes crystallization may be formed by adding a semiconductor containing a rare gas element. A conductor layer is formed and heat treatment is performed (at 550°C to 750°C for 3 minutes to 24 hours). The elements contained in the layer that promote crystallization move into the semiconductor layer containing the rare gas element, and crystallization is promoted. The elements that promote crystallization in the semiconductor layer are removed or reduced. The semiconductor layer containing the rare gas element that has become a mask is then removed.

[0075] The crystallization of the amorphous semiconductor layer may be performed by combining a heat treatment and crystallization by laser light irradiation; The heat treatment or the laser light irradiation may be performed individually or multiple times.

[0076] Alternatively, the crystalline semiconductor layer may be formed directly on the underlying insulating film of the substrate by a plasma method. In addition, a crystalline semiconductor layer is selectively formed on the base insulating film of a substrate by using a plasma method. It may be done.

[0077] The semiconductor layer mainly made of organic material contains a certain amount of carbon or Use of a semiconductor layer whose main component is a material made of carbon allotropes (excluding diamond) Specifically, pentacene, tetracene, thiophene oligomer derivatives, phenylene derivatives, phthalocyanine compounds, polyacetylene derivatives, polythiophene derivatives, cyanine compounds Examples include nin pigments.

[0078] The gate insulating film and the gate electrode may be fabricated by a known structure and method. The film is made of a known structure, such as a single layer of silicon oxide or a laminated structure of silicon oxide and silicon nitride. The gate electrode can be formed by using CVD, sputtering, droplet ejection, etc. u, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, An element selected from Ti, Si, Ge, Zr, and Ba, or an alloy material whose main component is an element It may be made of a compound material. Also, a polycrystalline silicon doped with an impurity element such as phosphorus may be used. A semiconductor layer such as a silicon film or an AgPdCu alloy may also be used. It may have a multi-layer structure.

[0079] Although FIG. 1 shows an example of a top-gate transistor, other types of transistors can also be used. Alternatively, a bottom gate transistor or other known transistor structures may be used.

[0080] Next, an interlayer insulating film is formed. The interlayer insulating film is made of an inorganic insulating material or an organic insulating material. The insulating layer can be formed as a single layer or a multilayer. Examples of the organic insulating material include acrylic and poly. Imides, polyamides, polyimideamides, benzocyclobutenes, etc. can be used. In addition, although the interlayer insulating films 128 and 129 are shown in FIG. 1 as two layers, this is only an example. However, the structure of the interlayer insulating film is not limited to this.

[0081] After the interlayer insulating film is formed, patterning and etching are performed to form the interlayer insulating film. A contact hole is formed in the gate insulating film or the like to reach the semiconductor layer of the transistor, and a conductive A conductive metal film is formed by sputtering or vacuum deposition and then etched to form a transistor. The drain electrode of the pixel transistor is connected to the first pixel electrode. The electrode is formed so as to have an overlapping portion and to provide electrical connection.

[0082] Next, the first electrode 117 is formed using a conductive film that transmits visible light. When the first electrode 117 is an anode, the material of the conductive film that is transparent to visible light is Indium oxide (In2O3) and indium oxide tin oxide alloy (In2O3-SnO2; ITO) can be formed using sputtering or vacuum deposition. Indium zinc oxide alloy (In2O3-ZnO) may also be used. O) is also a suitable material, and gallium (Ga) is also used to increase the transmittance of visible light and electrical conductivity. The first electrode 117 may be made of zinc oxide (ZnO:Ga) doped with ZnO. When using a cathode, an extremely thin film of a material with a low work function such as aluminum is used, or A laminated structure of a thin film of such a material and a conductive film having transparency to visible light as described above is used. It can be produced by

[0083] Thereafter, the interlayer insulating film and the first electrode 117 are covered with an organic insulating material or an inorganic insulating material. An insulating film is formed, and the insulating film is then covered with a layer of the first electrode 117 such that the surface of the first electrode 117 is exposed and the The partition wall 118 is formed by processing so as to cover the end portion.

[0084] Through the steps described above, the layer to be peeled 116 can be formed.

[0085] Next, the peeled layer 116 and the temporary support substrate 202 are bonded together using a peeling adhesive 203, and then peeled. The peeled layer 116 is peeled off from the fabrication substrate 200 using the peeling layer 201. The element 116 is provided on the temporary support substrate 202 side (see FIG. 3(B)).

[0086] The temporary support substrate 202 may be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate, or the like. In addition, a plate or the like having heat resistance capable of withstanding the processing temperature of this embodiment can be used. A plastic substrate or a flexible substrate such as a film may be used.

[0087] The peeling adhesive 203 used here is soluble in water or solvents, or irradiated with ultraviolet light or the like. The temporary support substrate 202 and the peeled layer 11 can be plasticized by the An adhesive that can chemically or physically separate the adhesive from 6 is used.

[0088] The transfer step onto the temporary support substrate can be carried out by various methods as appropriate. When a film containing a metal oxide film is formed on the side in contact with the peeled layer, the metal oxide film The layer to be peeled off can be peeled off from the substrate by weakening the layer by crystallization. When an amorphous silicon film containing hydrogen is formed as a peeling layer between a highly resistant substrate and a peeled layer, In this case, the amorphous silicon film is removed by irradiation with laser light or etching. The layer can be peeled off from the substrate. A film containing a metal oxide film is formed, the metal oxide film is weakened by crystallization, and one of the peeling layers is further formed. The part is removed by etching using a solution or halogen fluoride gas such as NF3, BrF3, or ClF3. After the bonding, the weakened metal oxide film can be peeled off. Films containing nitrogen, oxygen, hydrogen, etc. (for example, amorphous silicon films containing hydrogen, hydrogen-containing alloy films, acid The peeling layer is irradiated with laser light to remove the nitrogen and oxygen contained in the peeling layer. Alternatively, a method may be used in which hydrogen or the like is released as a gas to promote peeling between the layer to be peeled and the substrate.

[0089] Alternatively, the substrate on which the peeled layer is formed may be mechanically removed or delaminated with a solution such as NF3, BrF3, or C It can be removed by etching with halogen fluoride gas such as 1F3. In this case, the release layer does not need to be provided.

[0090] Furthermore, by combining a plurality of the above-mentioned peeling methods, the transposition step can be carried out more easily. That is, irradiation of laser light, etching of the peeling layer with gas or solution, or using a sharp knife or knife Mechanical removal is performed using a tool such as a knife to make the peeling layer and the peeled layer easier to peel off, and then Peeling can also be achieved by physical force (mechanically, etc.).

[0091] In addition, the layer to be peeled can be peeled off from the substrate by infiltrating a liquid into the interface between the peeling layer and the layer to be peeled. Furthermore, the peeling may be performed while pouring a liquid such as water on the film.

[0092] As another peeling method, when the peeling layer 201 is formed of tungsten, ammonia It is preferable to perform the peeling while etching the peeling layer 201 with a mixed solution of water and hydrogen peroxide. .

[0093] Next, the substrate 200 is peeled off, and the peeling layer 201 or the protective film 112 is exposed. A first adhesive layer 111 made of an adhesive different from the peeling adhesive 203 is applied to the peeled layer 116. The plastic substrate 110 is attached using the adhesive (see FIG. 3(C)).

[0094] The material of the first adhesive layer 111 may be a photo-curable adhesive such as an ultraviolet curable adhesive, a reactive adhesive, or the like. Use various curing adhesives such as curing adhesives, thermosetting adhesives, or anaerobic adhesives. can be done.

[0095] As the plastic substrate 110, various substrates having flexibility and transparency to visible light can be used. An organic resin film can be preferably used. For example, polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), etc. Polyester resin, acrylic resin, polyacrylonitrile resin, polyimide resin, poly Methyl methacrylate resin, polycarbonate resin (PC), polyethersulfone resin Polyester (PES), polyamide resin, cycloolefin resin, polystyrene resin, polyamide Imide resin, polyvinyl chloride resin, etc. can be used.

[0096] The plastic substrate 110 is previously coated with a film containing nitrogen and silicon, such as silicon nitride or silicon oxynitride. and permeable membranes such as aluminum oxide membranes and membranes containing nitrogen and aluminum, such as aluminum nitride. A protective film 125 with low resistance may be formed.

[0097] Thereafter, the peeling adhesive 203 is dissolved or plasticized, and the temporary support substrate 202 is removed. After the temporary support substrate 202 is removed, the first electrode 117 of the light-emitting element is peeled off so as to be exposed. The adhesive 203 is removed with water or a solvent (see FIG. 3(D)).

[0098] As a result of the above, the peeled layer 116 on which the TFT and the first electrode 117 of the light-emitting element are formed is It can be fabricated on a plastic substrate 110 .

[0099] After the first electrode 117 is exposed, the EL layer 119 is subsequently formed. The structure is not particularly limited, and may be a layer containing a substance with high electron transport properties or a layer containing a substance with high hole transport properties. a layer containing a material with high electron injection properties, a layer containing a material with high hole injection properties, a bipolar layer, The layer containing a material with high electron and hole transport properties may be appropriately combined. For example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, etc. may be appropriately combined. In this embodiment, the EL layer may be formed by combining a hole injection layer, a hole transport layer, and a The following describes the structure of the layer, which has a light-emitting layer, an electron transport layer, and an electron transport layer. The details are shown below.

[0100] The hole injection layer is provided in contact with the anode and is a layer containing a material with high hole injection properties. Vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide Other examples include phthalocyanine (abbreviated as H2Pc) and copper phthalocyanine. Phthalocyanine compounds such as CuPC, 4,4'-bis[N-(4-diphenyl [aminophenyl]-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-biphenyl s(N-{4-[N-(3-methylphenyl)-N-phenylamino]phenyl}-N- aromatic amine compounds such as diphenylaminobiphenyl (abbreviation: DNTPD), or poly (3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / The hole injection layer can also be formed from a polymer such as PSS.

[0101] In addition, a composite material containing an acceptor substance in a material with high hole transport properties can be used as the hole injection layer. It is to be noted that a material having a high hole transporting property may contain an acceptor material. By using a material that has the same work function as the electrode, it is possible to select the material for forming the electrode regardless of the work function of the electrode. That is, the first electrode 117 can be made of not only a material with a large work function but also a material with a low work function. Small materials can be used. Acceptor materials include 7,7,8,8-tetramethyl-2-(2-methyl-2-propanol). tetrafluoroquinodimethane (abbreviation: F4-TCNQ), Examples of the oxides include transition metal oxides. Examples include oxides of metals belonging to groups 4 to 8 of the periodic table. These include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, and Tungsten, manganese oxide, and rhenium oxide are preferred because of their high electron accepting properties. In particular, molybdenum oxide is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle.

[0102] As a substance with high hole transporting properties used in the composite material, aromatic amine compounds, carbazole derivatives, etc. Conductors, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.), etc. Various compounds can be used. It is preferable that the organic compound has high transportability. -6 cm 2 / Vs or more However, it is preferable that the material has a hole mobility higher than that of the material having a hole transporting property. Other materials may be used as long as they are of the same quality. The following lists specific organic compounds that can be used.

[0103] For example, the aromatic amine compound is N,N'-di(p-tolyl)-N,N'-diphenyl Nyl-p-phenylenediamine (DTDPPA), 4,4'-bis[N-(4-diphenyl phenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4, 4'-bis(N-{4-[N-(3-methylphenyl)-N-phenylamino]phenyl) }-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[N- (4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B ) etc.

[0104] Specific examples of carbazole derivatives that can be used in composite materials include 3-[N-( 9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazo (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazole-3- yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]- 9-phenylcarbazole (abbreviation: PCzPCN1) and the like.

[0105] Another carbazole derivative that can be used in composite materials is 4,4'-dicarbazole. (N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)biphenyl] 9-[4-(10-phenyl-9-[4-(10-phenyl-9-azolyl)phenyl]benzene (abbreviation: TCPB) -anthryl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4 -(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, etc. It is possible.

[0106] In addition, examples of aromatic hydrocarbons that can be used in the composite material include 2-tert- Butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-t ert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5 -diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9, 10-Bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10 -Di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene 2-tert-butylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnt h), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-bis[2-(1-naphthyl)phenyl]anthracene , 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethylanthracene Tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl 9,9'-bianthryl, 10,10-di(2-naphthyl)anthracene, '-Diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl )-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl (nyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, phenyl Examples include perylene and 2,5,8,11-tetra(tert-butyl)perylene. In addition, pentacene, coronene, etc. can also be used. -6 c m 2 An aromatic hydrocarbon having a hole mobility of 14 to 42 carbon atoms is used. is more preferable.

[0107] The aromatic hydrocarbon that can be used in the composite material may have a vinyl skeleton. Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2-diphenyl ether) phenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)biphenyl] phenylvinyl)phenyl]anthracene (abbreviation: DPVPA), and the like.

[0108] In addition, poly(N-vinylcarbazole) (abbreviated as PVK) and poly(4-vinyltriphenyl) PVTPA), poly[N-(4-{N'-[4-(4-diphenylamine] N'-phenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide Poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-PTPDMA] Polymer compounds such as [(phenyl)benzidine] (abbreviation: Poly-TPD) can also be used. do.

[0109] The hole transport layer is a layer containing a substance with high hole transport properties. For example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1, 1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4',4''-tris (N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4 ''-Tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-bis[N-(spiro-9,9'-bifluorene-2 -yl)-N-phenylamino]biphenyl (abbreviation: BSPB) and other aromatic amine compounds The substances mentioned here are mainly 10 -6 cm 2 / Vs or more holes However, if the material has a higher hole transporting property than the electron transporting property, Note that the layer containing a substance with a high hole transporting property is not limited to a single layer. Alternatively, two or more layers made of the above materials may be laminated.

[0110] In addition, poly(N-vinylcarbazole) (abbreviation: PVK) and poly(4 Polymer compounds such as 2-vinyltriphenylamine (PVTPA) can also be used. Cut.

[0111] The light-emitting layer is a layer containing a light-emitting substance. Even if it is a so-called single-film light-emitting layer, it is possible to use a so-called host material in which a light-emitting material is dispersed in a host material. It does not matter whether the light-emitting layer is a guest type or not.

[0112] There is no limitation on the light-emitting material to be used, and known fluorescent or phosphorescent materials can be used. Examples of the fluorescent material include N,N'-bis[4-(9H-carbazole-9- YG A2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-an Tolyl)triphenylamine (abbreviated as YGAPA), etc., and other compounds with an emission wavelength of 450 nm or more 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthracene) N,9-diphenyl-N-[4- (10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation Name: PCAPA), Perylene, 2,5,8,11-tetra-tert-butylperylene ( Abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9 N,N'-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA) -(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bi N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: DPABP) A), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl] N-[4-(9, 10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1, 4-Phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N' ',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10, 15-Tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl- 2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2P CAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthracene 2PCABPhA ), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl- 1,4-Phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1' -biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4 -phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-biphenyl) (9H-carbazol-9-yl)phenyl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenyl Nylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenyl Anthracene-9-amine (abbreviation: DPhAPhA) Coumarin 545T, N,N'-difluoro Phenylquinacridone, (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl) phenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{ 2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4- 2-(2-methyl-6-[(2-(2-ylidene)propanedinitrile (abbreviation: DCM1) ,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethene N,N-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2) ,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation Name: p-mPhTD), 7,13-diphenyl-N,N,N',N'-tetrakis(4- methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation :p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethylphenyl)-2-( ... Methyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizine-9- 4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJT I), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2, 3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl 4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-( 2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4 -ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-( 8-Methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene }propanedinitrile (abbreviation: BisDCJ™). Examples of suitable bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2 ’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), In addition, bis[2-(4',6'-difluoromethylphenyl)-2-(4-phenyl-2-propanol]-2-one, which has an emission wavelength in the range of 470 nm to 500 nm, (fluorophenyl)pyridinato-N,C 2’ ]Iridium(III) picolinate (abbreviation: FIrpic), bis[2-(3',5'-bistrifluoromethylphenyl)pyridina To-N,C 2’ ]Iridium(III) picolinate (abbreviation: Ir(CF3ppy)2( pic)), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ] Iridium(III) acetylacetonate (abbreviated as FIracac), emission wavelength is 50 0 nm (green emission) or more, tris(2-phenylpyridinato)iridium(III) (abbreviation Name: Ir(ppy)3), bis(2-phenylpyridinato)iridium(III) acetyl Ir(ppy)2(acac), tris(acetylacetonate) )(monophenanthroline)terbium(III) (abbreviation: Tb(acac)3(Phe n)), bis(benzo[h]quinolinato)iridium(III) acetylacetonate ( Abbreviation: Ir(bzq)2(acac)), bis(2,4-diphenyl-1,3-oxazoline Rato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(dpo) 2(acac)), bis[2-(4'-perfluorophenylphenyl)pyridinato]i Lithium(III) acetylacetonate (abbreviation: Ir(p-PF-ph)2(acac )), bis(2-phenylbenzothiazolato-N,C 2’ ) Iridium(III) acetyl Ir(bt)2(acac)), bis[2-(2'-benzo[4 ,5-α]thienyl)pyridinato-N,C 3’ ]Iridium(III) acetylacetonate Ir(btp)2(acac)), bis(1-phenylisoquinolinato-N ,C 2’ ) Iridium(III) acetylacetonate (abbreviation: Ir(piq)2(ac ac)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxazone Salinato]iridium(III) (abbreviation: Ir(Fdpq)2(acac)), (acetyl Iridium(III) Name: Ir(tppr)2(acac)), 2,3,7,8,12,13,17,18-O Tris(octaethyl)-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP) (1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europy Eu(DBM)3(Phen)), tris[1-(2-thenoyl )-3,3,3-trifluoroacetonato](monophenanthroline)europium(I II) (abbreviation: Eu(TTA)3(Phen)), etc. The material may be selected from other known materials in consideration of the emission color of each light-emitting element.

[0113] When a host material is used, for example, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) ( Abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (I I) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenyl) bis(8-quinolinolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc ( II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc (I I) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc (I I) (abbreviation: ZnBTZ), metal complexes such as 2-(4-biphenylyl)-5-(4-te rt-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-biphenyl bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl ]benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4 -tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2' ,2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) dazole (abbreviated as TPBI), bathophenanthroline (abbreviated as BPhen), Proine (abbreviation: BCP), 9-[4-(5-phenyl-1,3,4-oxadiazole heterocyclic compounds such as [-2-yl]phenyl]-9H-carbazole (abbreviation: CO11); Examples include aromatic amine compounds such as NPB (or α-NPD), TPD, and BSPB. In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, Condensed polycyclic aromatic compounds such as dibenzo[g,p]chrysene derivatives are exemplified. Specific examples thereof include: 9,10-Diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9- [4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine CzA1PA, 4-(10-phenyl-9-anthryl)triphenylamine DPhPA, 4-(9H-carbazol-9-yl)-4'-(10-phenyl)- N,9-diphenyl-9-anthryl)triphenylamine (abbreviation: YGAPA) -N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3 -amine (abbreviation: PCAPA), N,9-diphenyl-N-{4-[4-(10-phenyl {9-(triphenyl)phenyl}-9H-carbazol-3-amine (abbreviated as PCAPBA), N,9-diphenyl-N-(9,10-diphenyl-2-anthryl) -9H-Carbazol-3-amine (abbreviation: 2PCAPA), 6,12-dimethoxy-5 ,11-Diphenylchrysene,N,N,N',N',N'',N'',N''',N'' '-Octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine( Abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H- Carbazole (abbreviation: CzPA), 3,6-diphenyl-9-[4-(10-phenyl- 9-Anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 9,10- Bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di( 2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di( 2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9'-bianthryl (abbreviation: :BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: D PNS2), 3,3',3''-(benzene-1,3,5-triyl)tripylene (abbreviation Among these and other known substances, the most suitable one is the one that disperses well. The energy gap of the luminescent center substance (triplet excitation energy in the case of phosphorescence) is larger than the The layer has a material with a large energy gap (triplet excitation energy), and each layer A substance that exhibits transport properties that match the desired transport properties may be selected.

[0114] The electron transport layer is a layer containing a substance with high electron transport properties. For example, tris(8-quinolinol) Tris(4-methyl-8-quinolinolato)aluminum (Alq), Almq3, bis(10-hydroxybenzo[h]quinolinato)beryllium BeBq2, bis(2-methyl-8-quinolinolato)(4-phenylphenoxy) quinoline or benzoquinoline skeletons, such as tetrahydroaluminum (abbreviated as BAlq) In addition, the layer is made of a metal complex having bis[2-(2-hydroxyphenyl) )benzoxazolato]zinc (abbreviation: Zn(BOX)2), bis[2-(2-hydroxybenzoxazolato)zinc oxazoles such as phenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ)2); Metal complexes having thiazole-based ligands can also be used. Also, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4 -oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl) (phenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1 ,2,4-triazole (abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen) , bathocuproine (abbreviated as BCP), etc. can also be used. Mainly 10 -6 cm 2 / Vs or more. Any substance other than those mentioned above may be used for the electron-transporting layer as long as it has a high electron-transporting property.

[0115] The electron transport layer may be a single layer or a laminate of two or more layers made of the above-mentioned materials. So that's fine.

[0116] In addition, a layer for controlling the movement of electron carriers may be provided between the electron transport layer and the light emitting layer. This is a material with high electron transport properties, as described above, to which a small amount of a substance with high electron trapping properties is added. layer, which adjusts the carrier balance by suppressing the movement of electron carriers. This type of structure is caused by electrons penetrating the light-emitting layer. This is highly effective in suppressing problems that arise (such as a reduction in the device lifespan).

[0117] An electron injection layer may be provided in contact with the cathode. Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), etc. Such alkali metals or alkaline earth metals or their compounds can be used. For example, an alkali metal or alkaline earth metal or the like may be added to a layer made of a substance having an electron transporting property. These compounds are contained, for example, magnesium (Mg) in Alq As the electron injection layer, a layer made of a substance having an electron transport property can be used. By using a material containing an alkali metal or alkaline earth metal, the second electrode This is more preferable because electron injection from the electrode 120 is carried out efficiently.

[0118] Subsequently, the second electrode 120 is formed on the EL layer 119. In terms of quality, when the second electrode 120 is used as a cathode, it is necessary to use a material with a small work function (specifically, (3.8 eV or less) metals, alloys, electrically conductive compounds, and mixtures thereof are used. Specific examples of such cathode materials include those of Group 1 or 2 of the periodic table. Elements in Group 2, namely alkali metals such as lithium (Li) and cesium (Cs), and alkalis such as magnesium (Mg), calcium (Ca), and strontium (Sr). Earth metals and alloys containing them (MgAg, AlLi), europium (Eu), Examples include rare earth metals such as tterbium (Yb) and alloys containing these. However, by providing an electron injection layer between the cathode and the electron transport layer, it is possible to Regardless of the type, indium oxide-oxide containing Al, Ag, ITO, silicon or silicon oxide Various conductive materials, such as tin oxide, can be used as the cathode. Film formation is possible using methods such as tartering, inkjet printing, and spin coating. .

[0119] Furthermore, when the second electrode 120 is used as an anode, a material having a large work function (specifically, 4 It is preferable to use metals, alloys, conductive compounds, and mixtures thereof. Specifically, for example, indium oxide-tin oxide (ITO) n Oxide), indium oxide-tin oxide containing silicon or silicon oxide, acid Indium Zinc Oxide (IZO), Tungsten Oxide Examples include indium oxide containing stainless steel and zinc oxide (IWZO). Conductive metal oxide films are usually formed by sputtering, but they can also be made by applying the sol-gel method. For example, indium oxide-zinc oxide (IZO) can be produced by adding indium oxide. Formed by sputtering using a target containing 1 to 20 wt% zinc oxide In addition, indium oxide (I) containing tungsten oxide and zinc oxide can be used. WZO) is a compound of indium oxide with 0.5 to 5 wt% tungsten oxide and 0.0 wt% zinc oxide. It can be formed by sputtering using a target containing 0.1 to 1 wt% of Other metals include gold (Au), platinum (Pt), nickel (Ni), tungsten (W), and chromium. Aluminum (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium Examples of the nitride include palladium (Pd), and nitrides of metal materials (for example, titanium nitride). By placing the above composite material in contact with the anode, the electrode's work function can be controlled regardless of its level. The material can be selected.

[0120] The EL layer is disposed between a first electrode 600 and a second electrode 601 as shown in FIG. 6(A). In this case, the EL layer 800 and the EL layer 801 are stacked. In this case, it is preferable to provide a charge generation layer 803. The charge generation layer 803 is made of the above-mentioned composite material. The charge generating layer 803 can be made of a layer made of a composite material and a layer made of other materials. In this case, the layer made of the other material may be an electron donor layer. a layer containing a conductive material and a material with high electron transport properties, or a conductive film having a light-transmitting property to visible light A light-emitting element having such a structure can be used for energy transfer. Problems such as quenching and fading are unlikely to occur, and the range of materials available is wide, resulting in high luminous efficiency and long life. It is easy to make a light-emitting element that has both phosphorescence and non-phosphorescence. This structure can be used in combination with the above-mentioned EL layer structure to easily obtain fluorescent light. It is possible.

[0121] Next, in the case where two or more EL layers are stacked between the first electrode and the second electrode, As shown in FIG. 6B, the EL layer 1003 is, for example, n (n is a natural number of 2 or more). m-th (m is a natural number, 1≦m≦n−1) EL layer, Between each of the (m+1)th EL layers, a charge generation layer 1004 is sandwiched. do.

[0122] The charge generating layer 1004 is formed by applying a voltage between the first electrode 1001 and the second electrode 1002. When the charge generation layer 1004 is formed on the EL layer 1003, holes are generated. The other EL layer 1002 has a function of injecting electrons into the other EL layer 1003 .

[0123] The charge generating layer 1004 may be made of a composite material of an organic compound and a metal oxide. The charge generation layer 1004 can be made of a composite material of an organic compound and a metal oxide, or of other materials. and a metal (e.g., an alkali metal, an alkaline earth metal, or a compound thereof) For example, a layer made of a composite material of an organic compound and a metal oxide and a layer made of another material may be used. (e.g., alkali metal, alkaline earth metal, or a compound thereof) The composite material of an organic compound and a metal oxide may have a layer structure. These include compounds and metal oxides such as V2O5, MoO3, and WO3. Organic compounds include aromatic compounds. Aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, polymer compounds (oligomers, derivatives) Various compounds such as organic compounds (e.g., dimers, polymers, etc.) can be used. As a hole transporting organic compound, -6 cm 2 / Vs or more However, if a material has a higher hole transporting property than an electron transporting property, this may be used. It should be noted that the materials used for the charge generating layer 1004 are not limited to the above. It has excellent rear injection and carrier transport properties, making it possible to achieve low current driving of light emitting devices. can.

[0124] In particular, the configuration of FIG. 6(A) is preferable for obtaining white light emission, and can be combined with the configuration of FIG. This makes it possible to fabricate a long-life, highly efficient, full-color flexible light-emitting device.

[0125] The combination of multiple light-emitting layers includes red, blue, and green light to emit white light. For example, a first EL layer containing a blue fluorescent material as a light-emitting material and a second EL layer containing green and red fluorescent materials The second EL layer may include a phosphorescent material of the complementary color. White light can be emitted even if the EL layer has two light-emitting layers that emit light in a related manner. In a stacked element, the color of the light emitted from the first EL layer and the color of the light emitted from the second EL layer When the luminescent colors obtained from the above are in a complementary color relationship, the complementary colors are blue and yellow, Alternatively, blue-green and red may be mentioned. Substances that emit blue, yellow, blue-green, and red light include For example, the light-emitting material may be appropriately selected from the light-emitting materials listed above.

[0126] The following describes a plurality of light-emitting layers in which the first EL layer and the second EL layer are in a complementary color relationship. An example of a configuration in which white light can be emitted is shown.

[0127] For example, the first EL layer exhibits an emission spectrum having a peak in the blue to blue-green wavelength region. and a second light-emitting layer having an emission spectrum with a peak in the yellow to orange wavelength region. The second EL layer has an emission spectrum having a peak in the blue-green to green wavelength region. The third light-emitting layer exhibits an emission spectrum with a peak in the orange to red wavelength region. and a fourth light-emitting layer.

[0128] In this case, the light emitted from the first EL layer is the light emitted from both the first light-emitting layer and the second light-emitting layer. Since it is a combination of light, it emits light in both the blue to blue-green wavelength region and the yellow to orange wavelength region. In other words, the first EL layer emits a dual-wavelength white or or emits light that is close to white.

[0129] Furthermore, the light emitted from the second EL layer is mixed with the light emitted from both the third and fourth EL layers. It is a combination of blue-green and green wavelength regions and orange-red wavelength regions. The second EL layer exhibits an emission spectrum with a peak, i.e., a different peak from that of the first EL layer. It emits white or near-white light with two wavelengths.

[0130] Therefore, the light emitted from the first EL layer and the light emitted from the second EL layer can be overlapped. This allows for the blue to blue-green wavelength region, the blue-green to green wavelength region, the yellow to orange wavelength region, and the orange It is possible to obtain white light emission that covers the wavelength range from blue to red.

[0131] In the configuration of the above-mentioned stacked element, a charge generating layer may be disposed between the stacked EL layers. By doing so, it is possible to realize a long-life element in the high-brightness region while maintaining a low current density. In addition, the voltage drop due to the resistance of the electrode material can be reduced, allowing for uniform light emission over a large area. This becomes possible.

[0132] After the second electrode 120 is formed, a second adhesive layer 121 is applied to the second electrode 120. The second adhesive layer 121 is made of the same material as the first adhesive layer 111. The material for the metal substrate is not particularly limited, but aluminum is preferred. Aluminum, copper, nickel, aluminum alloys, stainless steel and other metal alloys It can be suitably used (FIG. 3(E)). The metal substrate 122 is Before bonding using 121, baking in a vacuum or plasma treatment is performed to It is preferable to remove water adhering to the surface of the substrate.

[0133] The metal substrate 122 can also be bonded using a laminator. The adhesive is attached to a metal substrate using a laminator, and then the laminator is The adhesive is then printed on the metal substrate using screen printing or other methods. One method is to print the film on the light-emitting element and then use a laminator to adhere it to the light-emitting element. This step is preferably carried out under reduced pressure to reduce the inclusion of air bubbles.

[0134] As described above, a light-emitting device according to one embodiment of the present invention as shown in FIGS. 1A to 1C is manufactured. It is possible.

[0135] In this embodiment, a flexible light-emitting device having a TFT is formed by connecting the first electrode 117 of the light-emitting element. The above method is an example of forming the above on a substrate and then peeling it off. However, after forming the light emitting element 127 (i.e., the second electrode 120 of the light emitting element), Alternatively, only the protective film 112 may be formed on the substrate, and the protective film 112 may be removed and relocated. After peeling and transferring the film to the stick substrate 110, TFTs and light-emitting elements may be fabricated. When FT is not provided, the first electrode 117 of the light emitting element is formed on the protective film 112. It can be similarly produced by

[0136] After the second electrode 120 of the light-emitting element is formed, a film sealing layer is formed as shown in FIG. 126 may be formed on the plastic substrate 110 to further reduce the water permeability. A coating film 124 is provided on the surface opposite to the surface in contact with the first adhesive layer 111, The resin layer 123 may be formed on the metal substrate 122 to prevent damage due to scratches or pressure. A protective layer may be provided to protect the metal substrate.

[0137] Also, the plastic substrate 110, the first adhesive layer 111, the second adhesive layer 121 and the resin The layer 123 may contain fibrous materials among these materials. High-strength fibers made of inorganic compounds are used. Specifically, high-strength fibers have high tensile modulus or yam. It refers to fibers with a high tensile strength, and typical examples are polyvinyl alcohol fibers, polyester fibers, etc. Polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, polyparaphenyl Examples of the fiber include benzobisoxazole fiber, glass fiber, and carbon fiber. Examples of fibers include glass fibers made from E glass, S glass, D glass, Q glass, etc. These are used in the form of woven or nonwoven fabric, and the fibrous body is impregnated with organic resin to form organic resin. The structure obtained by curing the resin may be used as the plastic substrate 110. When a structure made of a fiber body and an organic resin is used as 110, damage due to bending or local pressure is prevented. This is a preferable configuration because it improves reliability.

[0138] The plastic substrate 110 and the first adhesive layer 111 may contain the above-mentioned fibrous material. In this case, the fiber body is preferably made of a material having a thickness of 1000 nm or less, so as to reduce the obstruction of light from the light emitting element from escaping to the outside. It is preferable to use nanofibers with a diameter of 100 nm or less. It is preferable to match the refractive index of the adhesive.

[0139] In addition, it can also serve as both the first adhesive layer 111 and the plastic substrate 110. A structure in which a fiber body is impregnated with an organic resin and the organic resin is hardened can be used. In this case, the organic resin of the structure may be a reaction-curing type, a heat-curing type, an ultraviolet-curing type, or the like. It is preferable to use a material that hardens when subjected to heat treatment.

[0140] Next, an anisotropic conductive material is used to attach an FPC (flexible printed circuit) to each electrode of the input / output terminal section. If necessary, an IC chip or the like may be mounted.

[0141] Through the above steps, a modular light-emitting device with an FPC connected is completed.

[0142] Next, a top view and a cross-sectional view of a module-type light-emitting device (also called an EL module) are shown in FIG. Shown below.

[0143] FIG. 4(A) is a top view showing the EL module, and FIG. 4(B) is a cross-section of FIG. 4(A) along A-A'. In FIG. 4(A), a plastic substrate is attached via a first adhesive layer 500. A protective film 501 is provided on the plate 110, and a pixel section 502 and a source side driving circuit 50 are provided on the protective film 501. 4 and a gate side driving circuit 503 are formed.

[0144] Also, 400 is a second adhesive layer, 401 is a metal substrate, and on the pixel section and the driving circuit section A second adhesive layer 400 is formed, and the metal substrate 401 is bonded to the second adhesive layer 400. Furthermore, a resin layer is provided on the metal substrate 401 to protect the metal substrate 401. is also good.

[0145] 508 indicates a signal input to the source side driving circuit 504 and the gate side driving circuit 503. The wiring for transmitting the signal is FPC402 (flexible printed circuit board) which is the external input terminal. The video and clock signals are received from the FPC402. Although not shown, this FPC has a printed wiring board (PWB) attached. The flexible light-emitting device disclosed in this specification includes not only the light-emitting device itself but also the This also includes the state where an FPC or PWB is attached.

[0146] Next, the cross-sectional structure will be described with reference to FIG. A protective film 501 is provided, and above the protective film 501, a pixel section 502 and a gate side driving circuit 50 3 is formed, and the pixel section 502 is electrically connected to the current control TFT 511 and its drain. It is formed by a plurality of pixels including connected pixel electrodes 512. Also, the gate side driving circuit 503 is a CMO that combines n-channel TFT 513 and p-channel TFT 514. It is formed using an S circuit.

[0147] FIG. 4C shows an example of a cross-sectional structure different from that of FIG. 4B. In the example of FIG. 4C, The partition wall 118 is made of an inorganic material such as silicon nitride, silicon oxynitride, silicon nitride oxide, and silicon oxide. The second adhesive layer 400 and the peripheral edge of the metal substrate 401 are separated by a gap. It is placed closer to the center of the flexible light-emitting device than the peripheral edge of the wall 118. That is, the area of ​​the second adhesive layer 400 and the metal substrate 401 is smaller than that of the partition wall 118. The second adhesive layer 400 is then attached to the wall 118. ... This prevents moisture from entering through the side edges of the second adhesive layer 400. This can effectively block the intrusion of ions, thereby further improving the lifespan of flexible light-emitting devices. The low melting point metal 520 is not particularly limited, but it is generally a metal that can be fused at 45°C to 300°C. It is recommended to use a metal material. If the fusion temperature is around 300℃, it is possible to use a metal material around the pixel area and on the partition wall. The temperature rise is localized, so the light emitting element and the plastic substrate are melted without being damaged. Such materials include tin, silver, copper, indium, etc. These may further contain bismuth or the like.

[0148] 11(A) and 11(B) show a method for preventing moisture from entering from the peripheral edge of the light emitting device more effectively. The metal substrate 401 of the light emitting device shown in FIG. 11(A) is made of a second adhesive. The layer 400, the light emitting element 518, the peeled layer 116, and the plastic substrate 110 are larger than the The edge of the metal substrate 401 is connected to the second adhesive layer 400, the light emitting element 518, the peeled layer 116, and the plate. The sealing film 521 extends outward from the outer periphery of the plastic substrate 110. The adhesive layer 400, the light emitting element 518, the peeled layer 116 and the plastic substrate 110 are covered, and the metal It is in contact with the surface of the substrate 401. The sealing film 521 has low water permeability and is resistant to visible light. The light-transmitting material is typically a silicon nitride film, a silicon nitride oxide film, or a silicon oxide nitride film. Examples of suitable insulating materials include inorganic materials such as silicon dioxide films, and insulating films containing nitrogen and silicon can be used. By making the sealing film 521 have such a structure, the second adhesive that constitutes the light emitting device can be easily formed. the adhesive layer 400, the light emitting element 518, the peeled layer 116, and the edge of the plastic substrate 110; This can prevent moisture from entering the interior of the light emitting device through the interface.

[0149] 11B, the light emitting device shown in FIG. 11B includes a second adhesive layer 400, a light emitting element 518, a peeled layer, and a 116 and a planarization layer 522 at the edge of the plastic substrate 110. The planarization layer 522 The planarization layer 522 is formed by bonding the second adhesive layer 400, the light emitting element 518, and the The step created by the laminated structure consisting of the peeled layer 116 and the plastic substrate 110 is reduced. The end portion, where the step is reduced by the planarizing layer 522, can be easily covered with the sealing film 521. By adopting such a structure, the second adhesive layer 400 and the light emitting element 51 that constitute the light emitting device can be 8. Seal the edge and interface of the peeled layer 116 and the plastic substrate 110 to prevent moisture from penetrating. The flattening layer 522 can be applied not only to the edge but also to the The entire surface of the plastic substrate 110 may be covered with the coating.

[0150] As described above, the flexible light-emitting device described in this embodiment can be formed on a highly heat-resistant substrate. Since TFTs can be fabricated in a short time, crystalline semiconductors such as crystalline silicon with high mobility are suitable. Since TFTs using conductor layers can be used, such a drive circuit section can be simultaneously fabricated. This makes it possible to fabricate flexible light-emitting devices at lower cost.

[0151] (Embodiment 2) In this embodiment mode, an electronic device including the light-emitting device shown in Embodiment 1 will be described. do.

[0152] Examples of electronic devices including the light-emitting element described in Embodiment 1 include video cameras, digital still cameras, and Cameras, goggle displays, navigation systems, sound reproduction devices (car audio, audio components, etc.), computers, game devices, mobile information terminals ( mobile computers, mobile phones, portable game consoles, e-books, etc.), Image playback device (specifically, Digital Versatile Disc (DVD) (Devices equipped with a display device that can play back recording media such as DVDs and display the images) Specific examples of these electronic devices are shown in Figure 5.

[0153] FIG. 5A shows a television device, which includes a housing 9101, a support base 9102, a display portion 9103, a speaker, and the like. The display unit 9103 of this television device includes a speaker unit 9104, a video input terminal 9105, etc. can be manufactured by using the light-emitting device described in Embodiment 1. A television set equipped with the light-emitting device according to the first embodiment, which has a long life and can be easily manufactured, In part 9103, curved display is possible, lightweight, long-lasting, and relatively affordable. This makes it possible to produce inexpensive products.

[0154] FIG. 5B shows a computer, which includes a main body 9201, a housing 9202, a display unit 9203, and a keyboard. It includes a board 9204, an external connection port 9205, a pointing device 9206, and the like. The display portion 9203 of this computer uses the light-emitting device described in Embodiment Mode 1. The light-emitting device according to the first embodiment is flexible, has a long life, and can be easily fabricated. The computer equipped with the device is capable of displaying curved surfaces on the display unit 9203 and is lightweight. It is possible to achieve this while creating a product with a long life and a relatively low price.

[0155] FIG. 5C shows a mobile phone, which includes a main body 9401, a housing 9402, a display portion 9403, and an audio input portion. 9404, an audio output unit 9405, operation keys 9406, an external connection port 9407, etc. The display portion 9403 of this mobile phone can be realized by using the light-emitting device described in Embodiment Mode 1. The light-emitting device according to the first embodiment is flexible, has a long life, and can be easily manufactured. The mobile phone equipped with the device has a display unit 9403 that can display curved surfaces and is lightweight. It is possible to provide high quality images while maintaining the same level of quality. Mobile phones in the world have various added value, but they are portable and lightweight. This makes the mobile phone suitable for use as a high-performance mobile phone.

[0156] FIG. 5D shows a camera, which includes a main body 9501, a display portion 9502, a housing 9503, an external connection port, and the like. Port 9504, remote control receiver 9505, receiver 9506, battery 9507, audio input The camera includes a display unit 9508, operation keys 9509, and an eyepiece 9510. 2 is manufactured by using the light-emitting device shown in Embodiment 1. The camera equipped with the light-emitting device according to the first embodiment, which has a long life and can be easily manufactured, has a display unit The 9502 is capable of displaying curved surfaces, is lightweight, has a long lifespan, and is relatively inexpensive. This makes it possible to make it a valuable product.

[0157] FIG. 5E shows a display, which includes a main body 9601, a display unit 9602, an external memory insertion unit 9603, and a display unit 9604. 603, a speaker part 9604, operation keys 9605, etc. The main body 9601 also includes a It may also be equipped with a TV receiving antenna, external input terminal, external output terminal, battery, etc. The display portion 9602 of this display uses the light-emitting device described in Embodiment Mode 1. The flexible display unit 9602 is stored in the main body 9601 by rolling it up. It is flexible, has a long life, and can be easily manufactured. The display incorporating the light-emitting device described in Embodiment 1 has a display portion 9602. It is possible to create a product that is suitable for use in a wide range of applications, lightweight, long-lasting, and relatively inexpensive. become.

[0158] As described above, the light-emitting device shown in the first embodiment has a very wide range of application. It can be applied to electronic devices in all fields.

[0159] (Embodiment 3) Flexible light-emitting devices use plastic substrates, so they are less prone to charging than glass substrates. Therefore, in this embodiment, a transparent conductive film is used as the coating film 124 in FIG. An example of manufacturing a flexible light-emitting device with anti-static measures will be described.

[0160] A transparent conductive film is formed on the surface of the plastic substrate 110 opposite to the surface that contacts the first adhesive layer 111. After the FPC 402 is attached, a coating film 124 is provided. Alternatively, a coating film 124 made of a transparent conductive film may be formed after the metal substrate 401 is bonded. Alternatively, a transparent conductive film may be formed on the FPC 402 before the FPC 402 is attached. A coating film 124 may be formed.

[0161] The transparent conductive film used for the coating film 124 is made of indium oxide (In2O3), tin oxide, or , indium oxide-tin oxide alloy (In2O3-SnO2, abbreviated as ITO), tin oxide Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, oxide Indium oxide containing titanium, indium zinc oxide, indium with silicon oxide The film is formed by sputtering, printing, vacuum deposition, etc. using aluminum tin oxide, antimony oxide, etc. do.

[0162] A statically charged human hand or finger is covered with a coating film 124, which is a transparent conductive film. Even if a discharge occurs when the back substrate 110 is touched, the TFT (n-channel TFT 513 or p The channel type TFT 514 and the pixel portion 502 can be protected.

[0163] Furthermore, the coating film 124, which is a transparent conductive film, is formed on the surface of the soft plastic substrate 110 without scratching it. It can also protect against

[0164] It is also preferable to electrically connect the coating film 124, which is a transparent conductive film, to the metal substrate 401. An example of the structure is shown in FIG. 12. In this case, the metal substrate 401 has a conductive A substrate is used.

[0165] Also, since FIG. 12 is the same as FIG. 4 except for some differences, the same reference numerals are used for the same parts. I will explain.

[0166] FIG. 12(A) is a top view showing the EL module, and FIG. 12(B) is a view of FIG. 12(A) along the chain line A- 12(C) is a cross-sectional view taken along the line A' in FIG. 12(A). FIG.

[0167] In FIG. 12(A), a protective film is attached to a plastic substrate 110 via a first adhesive layer 500. A protective film 501 is provided, and a pixel section 502, a source side driving circuit 504, and a gate side The pixel section and the driver circuit 503 are formed in accordance with the first embodiment. For example, you can get

[0168] Also, 400 is a second adhesive layer, 401 is a metal substrate, and on the pixel section and the driving circuit section A second adhesive layer 400 is formed, and the metal substrate 401 is bonded to the second adhesive layer 400. The metal substrate 401 has an area that does not overlap with the plastic substrate 110. In this region, a coating film 124, which is a transparent conductive film, is formed. 110, the side of the first adhesive layer 500, the side of the protective film 501, and the side of the gate insulating film. The coating film 1, which is a transparent conductive film, is also applied to the side surfaces of the interlayer insulating film, the side surfaces of the second adhesive layer 400, etc. By forming a coating film 124, which is a transparent conductive film, on these side surfaces, This allows the metal substrate 401 and the coating film 124 to be electrically connected.

[0169] As shown in FIG. 12(C), a metal substrate 401 and a coating are formed around the plastic substrate 110. By disposing a coating film 124 and electrically connecting the metal substrate 401 and the coating film 124, This effectively suppresses static electricity buildup.

[0170] In this embodiment, the plastic substrate 110 and the metal substrate 401, which is a stainless steel substrate, A 110 nm thick indium oxide tin oxide alloy film is deposited.

[0171] When forming the transparent conductive film by sputtering, the film is not formed on the edge of the FPC 402. The film is formed while the substrate is protected by a metal foil or the like. It is preferable that the film is formed also on the area (the area that does not overlap with the plastic substrate 110). Although not shown, if it is not protected by covering it with metal foil or the like, it will be transparent to the FPC 402. A bright conductive film is formed.

[0172] Furthermore, the coating film 124, which is a transparent conductive film, is formed on the surface of the soft plastic substrate 110 without scratching it. The coating film 124, which is a transparent conductive film provided on the side surface, It also functions as a protective film that prevents moisture from entering.

[0173] This embodiment mode can be freely combined with other embodiment modes. [Example]

[0174] In this embodiment, an active matrix type flexible substrate that can be used as an image display device is used. The structure of the light emitting device exemplified in this example is shown in FIG. 7(A) and FIG. 7(B). ) is shown in FIG. 7(A). FIG. 7(B) is a top view showing an active matrix light emitting device. 7B) is a cross-sectional view taken along line A-A' in FIG. 7A.

[0175] The flexible light-emitting device exemplified in this embodiment comprises a plastic substrate 110 and a peelable layer 11 6, a light emitting element 518 and a metal substrate 401.

[0176] The plastic substrate 110 onto which the peeled layer 116 is transferred has a visible light transmittance of 90%. The above is made of an aramid film with a thickness of 20 μm and a thermal expansion coefficient of approximately 10 ppm / K. The first adhesive layer 500 that bonds the plastic substrate 110 and the peeled layer 116 is Two-component epoxy adhesive (manufactured by Alteco Co., Ltd., product name: R2007 / H-1010) become.

[0177] The peeled layer 116 includes a protective film 501, a pixel section 502, a gate side driving circuit 503, and a source The pixel section 502 has a current control TFT 511 and a pixel voltage The pixel electrode 512 is electrically connected to the drain electrode layer of the current control TFT 511. The current control TFT 511 shown as an example is a p-type TFT, and the pixel electrode 512 corresponds to the anode of the light emitting element 518.

[0178] The protective film 501 is a silicon oxynitride (SiO x N y , x>y) layer and thickness Silicon nitride (SiN) with a thickness of 200 nm y ) layer and a 200 nm thick silicon oxynitride (S iO x N y , x>y) layer and a 140 nm thick silicon oxynitride (SiN y O x , x <y ) layer and a 100 nm thick silicon oxynitride (SiO x N y , x>y) multilayer film do. This laminated structure prevents water vapor and oxygen from penetrating from the bottom of the substrate. It becomes like this.

[0179] The TFT exemplified in this embodiment has a gate insulating film on a semiconductor layer, and a gate electrode layer that overlaps the semiconductor layer through the gate insulating film. It has a TFT with a sequential staggered structure having a source electrode layer and a drain electrode layer that are electrically connected to the source region and the drain region of the semiconductor layer. The semiconductor layer of the TFT is composed of a polysilicon layer with a thickness of 50 nm, and the gate insulating film is composed of a silicon oxynitride (SiO N , x > y) film with a thickness of 11 0 nm. x N y , x > y) film.

[0180] Although not shown in the figure, the gate electrode layer consists of two layers, and the lower gate electrode layer has a shape longer than that of the upper gate electrode layer. The lower gate electrode layer is composed of a tantalum nitride layer with a thickness of 30 nm, and the upper electrode layer is composed of a tungsten (W) layer with a thickness of 370 nm. With such a shape, an LDD (Lightly Doped Drain) region can be formed without adding a photomask. The first interlayer insulating film ⑤15a formed on the gate insulating film and the gate electrode layer is composed of a multilayer film formed by laminating a silicon oxynitride (SiO N , x > y) layer with a thickness of 50 nm, a silicon nitride oxide (SiN

[0181] O , x < y) layer with a thickness of 140 nm, and a silicon oxynitride (SiO x N y , x > y) layer with a thickness of 520 nm. (SiN y O x , x < y) layer, and a silicon oxynitride (SiO x ) N y , x > y) layer.

[0182] Through the contact hole of the first interlayer insulating film ⑤15a, a source electrode layer and a drain electrode layer that are connected to the source region and the drain region of the TFT are formed. The source electrode layer and The drain electrode layer is a 100 nm thick titanium layer, a 700 nm thick aluminum layer, and It consists of a multilayer film of titanium layers with a thickness of 100 nm. By laminating titanium, which has excellent heat resistance, the wiring resistance is suppressed while the Although not shown, the wiring layer is also formed in the same layer.

[0183] The second interlayer insulating film 515b formed on the TFT is an oxynitride silicon dioxide film having a thickness of 150 nm. Ricon (SiO x N y , x>y) layers.

[0184] The pixel electrode (first electrode) 512 is made of indium tin oxide (TIO) containing silicon oxide with a thickness of 125 nm. The edge of the pixel electrode 512 is covered with a partition wall 513 made of photosensitive polyimide. The end of the partition wall 519 is in contact with the surface of the pixel electrode 512, and is covered with a smooth The edge of the partition wall 519, which is in contact with the pixel at a gentle angle, has a gentle step. In a light-emitting element having the electrode 512 as one of its electrodes, the pixel electrode 512 and the other electrode are short-circuited. It becomes difficult.

[0185] In this embodiment, the peeled layer 116 is a glass substrate (manufactured by Asahi Glass Co., Ltd., product name A) with a thickness of 0.7 mm. The film is fabricated on a release layer formed on a 100 nm thick oxynitride film. Silicon (SiO x N y , x>y) layer and a 50 nm thick tungsten layer. It consists of a membrane.

[0186] The structure of a light-emitting element 518 having the pixel electrode 512 as one of its electrodes is shown in FIG. 518 has a pixel electrode 512 as a first electrode and an EL layer 516 between the pixel electrode 512 and a second electrode 517. The chemical formulas of the materials used in this example are shown below.

[0187] [ka]

[0188] A method for fabricating the light-emitting element of this example will be described below.

[0189] First, the pixel electrode 512 was formed so that the surface on which the pixel electrode 512 was formed faced downward. The substrate was fixed to a substrate holder installed in a vacuum deposition apparatus. -4 The pressure was reduced to about Pa Then, 4,4'-bis[N-(1-naphthyl)-N-phenylamino] By co-evaporating ]biphenyl (abbreviation: NPB) and molybdenum (VI) oxide, The first layer 2111 containing a composite material made by combining an organic compound and an inorganic compound is used as a hole injection layer. The film thickness was 140 nm, and the ratio of NPB to molybdenum (VI) oxide was The weight ratio was adjusted to 1:0.11 (=NPB:molybdenum oxide). The evaporation method is a method in which evaporation is carried out simultaneously from a plurality of evaporation sources in one processing chamber.

[0190] Next, NPB is deposited on the first layer 2111 containing the composite material by a deposition method using resistance heating. The second layer 2112 was formed as a hole transporting layer.

[0191] Furthermore, on the second layer 2112, 9-[4-(10-phenyl-9-anthryl)phenyl ]-9H-carbazole (abbreviation: CzPA) and a green luminescent material N-(9,10-diphenyl (2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation The third layer 2113 was formed as a light-emitting layer by co-evaporation of SiO 2 and SiO 2 (PCAPA). The thickness of the light-emitting layer was 30 nm, and the weight ratio of CzPA to 2PCAPA was 1:0.0. The evaporation rate was adjusted so that the ratio of CzPA to PCAPA was 5 (=CzPA:2PCAPA).

[0192] Next, tris(8-quinolinolato)aluminum (abbreviation: Alq) was deposited on the third layer 2113. and N,N'-diphenylquinacridone (abbreviation: DPQd), an electron trapping substance. The first electron transport region 2114a was formed by co-evaporation. The thickness of 2114a was 10 nm, and the ratio of Alq to DPQd was 1:0.005 by weight. The deposition rate was adjusted so that the composition was (=Alq:DPQd).

[0193] Then, bathophenanthroline (abbreviation: BPhen) was added as the second electron transport region 2114b. ) was evaporated to a thickness of 30 nm to form the first electron transport region 2114a and the second electron transport region 2114b. A fourth layer 2114 made of the following was formed as an electron transporting layer.

[0194] Furthermore, lithium fluoride (LiF) is vapor-deposited on the fourth layer 2114 to form a fifth layer. The fifth layer 2115 was formed as an electron injection layer. The film thickness of the fifth layer 2115 was set to 1 nm.

[0195] Finally, the second electrode 517, which functions as a cathode, is formed. The second electrode 517 is composed of two layers. The first conductive layer 517a in contact with the fifth layer 2115 is made of aluminum (Al) and NP The aluminum and NPB were co-deposited at a weight ratio of 5:1 (=Al The thickness of the first conductive film was adjusted to 100 nm. On the layer 517a, aluminum was evaporated to a thickness of 100 nm as a second conductive layer 517b. The second electrode 517 is connected to the terminal portion via a common electrode layer.

[0196] In addition, in the above-mentioned deposition process, the deposition can be performed by resistance heating.

[0197] The metal substrate 401 is attached to the peeled layer 116 and the light emitting element 518 via the second adhesive layer 400. This prevents the peeled layer 116 and the light emitting element 518 from being exposed to the atmosphere. 401 has a thermal expansion coefficient of approximately 10 ppm / K and is a ferritic stainless steel with a thickness of 20 μm. The second adhesive is a glass substrate (manufactured by Nippon Steel Materials Co., Ltd., product name YUS205-M1). Layer 400 is an acrylic sheet adhesive (manufactured by Sumitomo 3M, product code: 3M) having a thickness of 25 μm. Product name: 8171J).

[0198] The light-emitting device exemplified in this example is manufactured according to the manufacturing method described in Embodiment 1. That is, a protective film 501 and a layer functioning as a first electrode are formed on a release layer formed on a fabrication substrate. The peeled layer 116 having the pixel electrode 512 and the like was formed first. 6 is temporarily supported on a plastic substrate 110 that is transparent to visible light and flexible from the fabrication substrate. Then, the EL layer 516 and the second electrode 517 were formed on the pixel electrode 512. 400 was used to form the light emitting element 518. Finally, the metal substrate 518 was The peeled layer 116 and the light emitting element 518 were sealed in 401 to prepare a light emitting device.

[0199] The flexible light-emitting device exemplified in this example was wrapped around a cylinder with a diameter of 10 mm. The light-emitting device responded to the video signal while bent into a cylindrical shape and operated normally. In addition, even when released from the cylinder and driven, it operated normally in a flat state. This is shown in Figure 9.

[0200] The light-emitting device exemplified in this embodiment has a peeled layer manufactured using a highly heat-resistant manufacturing substrate. As a result, a high-temperature process can be used for the layer to be peeled off, making it possible to obtain a highly moisture-proof protective film. This makes it easier to form the protective film, and the light emitting element can be protected reliably and inexpensively. The light emitting device has flexibility and can emit light both in a bent state and in a flat state.

[0201] The light emitting device shown as an example is composed of a thin film, a thin film, and a thin metal plate. This not only reduces deformation when dropped, but also provides excellent flatness and is resistant to changes in the operating environment. Since there is little curl, the driving circuit of the display device is less likely to be damaged. Suitable for flexible display applications. [Example]

[0202] In this embodiment, a flexible light-emitting device that can be used as a display device and a lighting device is provided. The light emitting device of this embodiment is connected to the terminal portion without a switching element. The electrode layers of multiple light-emitting elements are arranged in a matrix, making it a passive matrix type. It can be used for display devices and backlights of display devices. Even if one light emitting element is provided without any other elements, the device can be used as a lighting device.

[0203] The structure of the pixel portion of the light-emitting device exemplified in this embodiment is shown in FIG. 8(A) and FIG. 8(B). ) is a top view showing a passive matrix type light emitting device, and FIG. 8(B) is a cross-sectional view taken along A-A’ of FIG. 8(A). It is a cross-sectional view cut along A-A’.

[0204] The flexible light emitting device illustrated in this embodiment has a plastic substrate 110, a peeling layer 11 6, a light emitting element 518, and a metal substrate 401. Since the plastic substrate 110, the light emitting element 518, and the metal substrate 401 are the same as those in Example 1, the description thereof is omitted.

[0205] The peeling layer 116 illustrated in this embodiment has a protective film 501, a pixel electrode 512, and an interlayer insulating film (515a, 515b) and a partition wall 519.

[0206] The protective film 501 is a multilayer film composed of a silicon oxynitride (SiO x N y , x>y) layer with a thickness of 200 nm, a silicon nitride (SiN ) layer with a thickness of 200 nm, a silicon oxynitride (S y iO iO x N y , x>y) layer with a thickness of 200 nm, a silicon oxynitride (SiN y O x , x<y ) layer with a thickness of 140 nm, and a silicon oxynitride (SiO x N y , x>y) layer with a thickness of 100 nm. )]]It consists of.

[0207] The first interlayer insulating film 515a is a multilayer film composed of a silicon oxynitride (SiO x N y [[ID=]54]], x>y ) layer with a thickness of 50 nm, a silicon oxynitride (SiN y O x , x<y) layer with a thickness of 140 nm, and a silicon oxynitride (SiO nm with a thickness of 520 x N y , x>y) layer.

[0208] The wiring layer is a 100 nm thick titanium layer, a 700 nm thick aluminum layer, and a 10 The second interlayer insulating film 515b is made of a multilayer film of titanium layers each having a thickness of 150 nm. Silicon oxynitride (SiO x N y , x>y) layers.

[0209] The pixel electrode 512 is electrically connected to the wiring layer through a contact hole in the second interlayer insulating film 515b. The pixel electrode 512 is made of indium tin oxide containing silicon oxide with a thickness of 125 nm. (ITSO) membrane.

[0210] The edge of the pixel electrode 512 is covered with a partition wall 519 made of photosensitive polyimide.

[0211] In this embodiment, the peeled layer 116 is formed on a peelable layer formed on a glass substrate having a thickness of 0.7 mm. The peeling layer was made of silicon oxynitride (SiO x N y , x>y) It consists of a multilayer film consisting of a layer and a 50 nm thick tungsten layer.

[0212] The flexible light-emitting device exemplified in this example is wound around a cylinder with a diameter of 5 mm to 30 mm. The light emitting device was turned on in the cylindrically bent state and operated normally. Even when released from the cylinder and driven, it lights up normally in a flat state, and when bent and released This process was repeated several times and the light still emitted normally. The light emission state is shown in a photograph in Figure 10.

[0213] The light-emitting device exemplified in this embodiment has a peeled layer manufactured using a highly heat-resistant manufacturing substrate. As a result, a high-temperature process can be used for the layer to be peeled off, making it possible to obtain a highly moisture-proof protective film. This makes it easier to form the protective film, and the light emitting element can be protected reliably and inexpensively. The light emitting device has flexibility and can emit light both in a bent state and in a flat state.

[0214] The light emitting device shown as an example is composed of a thin film, a thin film, and a thin metal plate. Because it is thin, it can be placed in a narrow space or can be deformed to fit along a curved surface. This makes it suitable for use in devices where weight must be kept strictly controlled, such as mobile equipment and aircraft. [Explanation of symbols]

[0215] 110 Plastic Substrate 111 first adhesive layer 112 Protective film 113 Undercoat insulating film 114 pixel TFT 115 TFT 116 Peeling layer 117 First electrode 118 Bulkhead 119 EL layer 120 Second electrode 121 Second adhesive layer 122 Metal Substrate 123 Resin layer 124 Coating film 125 Protective film 126 Membrane sealing layer 127 Light-emitting element 128 First interlayer insulating film 129 Second interlayer insulating film 200 Fabricated Boards 201 Peeling layer 202 Temporary support substrate 203 Peeling adhesive 300 color filter layers 301 Barrier Film 302 Color filter substrate 303 Coating film 304 Interlayer insulating film 305 Electrode 306 Planarization film 307 Electrode 400 Second adhesive layer 401 Metal Substrate 402 FPC 500 First adhesive layer 501 Protective film 502 pixel section 503 Gate side drive circuit 504 Source side drive circuit 508 Wiring 511 Current control TFT 512 pixel electrode 513 n-channel TFT 514 p-channel TFT 515a First interlayer insulating film 515b Second interlayer insulating film 516 EL layer 517 Second Electrode 517a First conductive layer 517b Second conductive layer 518 Light-emitting element 519 Bulkhead 520 Low melting point metal 521 Sealing film 522 Planarization layer 600 first electrode 601 Second electrode 800 EL layer 801 EL layer 803 Charge generation layer 1001 first electrode 1002 second electrode 1003 EL layer 1004 Charge generation layer 2111 First Layer 2112 Second Layer 2113 Third Layer 2114 Fourth Layer 2114a First electron transport region 2114b Second electron transport region 2115 Fifth Layer 9101 Housing 9102 Support stand 9103 Display section 9104 Speaker section 9105 Video input terminal 9201 Main Unit 9202 Housing 9203 Display section 9204 keyboard 9205 External connection port 9206 Pointing Device 9401 Main Unit 9402 Housing 9403 Display section 9404 Audio input unit 9405 Audio output unit 9406 Operation Key 9407 External connection port 9501 main body 9502 Display section 9503 Housing 9504 External connection port 9505 Remote control receiver 9506 Image receiving unit 9507 Battery 9508 Audio input unit 9509 Operation Key 9510 Eyepiece 9601 main unit 9602 Display section 9603 External memory insertion section 9604 Speaker unit 9605 Operation Key

Claims

[Claim 1] a substrate that is flexible and transmissive to visible light; a first adhesive layer provided on the substrate; an insulating film containing nitrogen and silicon located on the first adhesive layer; a light-emitting element including a first electrode formed on the insulating film, a second electrode facing the first electrode, and an EL layer provided between the first electrode and the second electrode; a second adhesive layer formed on the second electrode; a metal substrate provided on the second adhesive layer, The flexible light-emitting device, wherein the thickness of the metal substrate is 10 μm or more and 200 μm or less.

Images