Circuit board and power device

The circuit board design with controlled thicknesses of bonding and diffusion layers on a silicon nitride substrate addresses the challenge of maintaining heat dissipation and thermal cycle resistance, ensuring robust performance under thermal stress.

JP2026015373AActive Publication Date: 2026-01-29NITERRA CO LTD
4 Cites 0 Cited by

Patent Information

Application Number
JP2025186463
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-11-05
Publication Date
2026-01-29
Estimated Expiration
2043-12-27

AI Technical Summary

Technical Problem

Existing circuit boards using silicon nitride heat dissipation substrates face challenges in maintaining heat dissipation properties while improving resistance to thermal cycles due to the thickness of the brazing filler metal, which can either decrease thermal conductivity or increase the risk of interfacial cracks.

Method used

A circuit board design with specific thickness ranges for bonding and diffusion layers, utilizing a ceramic substrate made of silicon nitride, a Ti-containing bonding layer, and conductor layers with controlled thicknesses, along with optional second bonding and conductor layers, enhances bonding strength and thermal conductivity.

Benefits of technology

The design maintains heat dissipation properties while significantly improving resistance to thermal cycles, reducing the risk of cracking and bulging.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026015373000001_ABST
    Figure 2026015373000001_ABST
Patent Text Reader

Abstract

To provide a circuit board and a power device in which resistance to heat cycle is enhanced while maintaining heat dissipation.SOLUTION: A circuit board 50 includes a ceramic substrate 10 made of a material containing silicon nitride as a main component, a bonding layer 20 containing Ti formed on one main surface 12 of the ceramic substrate 10, and a conductor layer 30 bonded to the ceramic substrate 10 via the bonding layer 20, in which a thickness of the bonding layer 20 is 0.3 μm or more and 3 μm or less.SELECTED DRAWING: Figure 1
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Heat conductive silicon nitride circuit board and semiconductor device

    JP1997153567A

  • Metal-ceramic bonding substrate and method for producing the same

    JP2017035805A

  • Method of manufacturing ceramic circuit board, and circuit board

    JP2013175525A

  • Ceramics circuit board

    JP2014207482A