Valve control method for CVD system

Abstract

To provide a method and a system for chemical vapor deposition which reduce the problem that debris enters a collection chamber and contaminates a deposition product when the deposition product is transferred from a reactor to the collection chamber.SOLUTION: To purge debris from between the collection valve 140 and the bypass valve through the bypass valve 142 of the collection chamber 120, the collection valve between the reactor 110 and the collection chamber and the purge valve between the collection valve and the collection chamber are opened while the bypass valve is open. The purge valve is then closed and the collection valve is opened to direct deposition products from the reactor to the collection chamber for processing.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to valve control in chemical vapor deposition (CVD) systems. [Background technology]

[0002] Certain types of chemical vapor deposition (CVD) systems have a reactor for producing a deposition product configured separately from a collection chamber for processing the deposition product to obtain a CVD product. In such systems, as the deposition product is transferred from the reactor to the collection chamber, debris can enter the collection chamber and contaminate the deposition product. Summary of the Invention

[0003] It is an object of the present invention to provide a method and system that reduces contamination problems.

[0004] To this end, a valve control sequence for a CVD system and a system for executing the valve control sequence are provided.

[0005] According to a first aspect, a method for controlling a valve in a chemical vapor deposition (CVD) system is disclosed. The CVD system includes a reactor for producing a deposition product, a collection chamber for processing the deposition product, such as by chemical vapor deposition, to obtain, among other things, a CVD product, and a gas distribution system (GDS) for transporting the deposition product from the reactor to the collection chamber. The method includes opening a collection valve of the GDS between the reactor and the collection chamber and a purge valve of the GDS between the bypass valve and the collection chamber while the bypass valve is open to purge debris from between the purge valve and the bypass valve of the collection chamber through the bypass valve. The purge valve can be opened to provide a flow of purge gas to the gas distribution system. By opening the collection valve, the purge gas can sweep the debris away from the collection valve, and by positioning the purge valve relative to the collection chamber and the collection valve, debris can be forced away from the collection chamber. Opening the bypass valve allows the debris to be expelled through the bypass valve and away from the collection chamber.

[0006] The method then includes closing the purge valve and opening the collection valve to direct the deposition product from the reactor to the collection chamber for processing. The collection valve can be opened to direct flow from the reactor through the collection valve and into the collection chamber. Closing the purge valve alleviates backflow, allowing deposition products to pass through the purge valve and reach the collection chamber. As a result, the purge valve can be utilized to perform processing without contamination from debris purged through the bypass valve. In this way, contamination to the process and CVD products can be reduced. Processes performed in the collection chamber include deposition, such as chemical vapor deposition, product collection, isolation, processing in a vacuum system, product removal, and any combination thereof.

[0007] In one embodiment, the method includes closing the purge valve along with the bypass valve to direct the deposition product from the reactor to the collection chamber for processing. Closing the bypass valve not only prevents debris displaced through the bypass valve from returning and contaminating the process, but also directs more of the deposition product from the reactor into the collection chamber.

[0008] In one embodiment, the collection valve is opened along with the exhaust valve of the collection chamber to direct the deposition product from the reactor to the collection chamber for processing. By opening the exhaust valve, the deposition products can be efficiently transported to the collection chamber.

[0009] In one embodiment, the bypass valve and the exhaust valve are control valves. This allows the bypass valve and the exhaust valve to continuously take one or more positions between, for example, a fully open position and a fully closed position. The bypass valve moves from an open position to a closed position when the exhaust valve moves from a closed position to an open position to direct the deposition product from the reactor to the collection chamber for processing. This allows the bypass valve and the exhaust valve to be partially open simultaneously, allowing the flow direction to gradually or slowly reverse from the bypass direction to the collection chamber direction without abrupt changes. This allows the quality of the obtained CVD product to be uniform. Another advantage of this embodiment is that the reactor pressure can be kept constant as a result, thereby reducing particle detachment from the reactor and collection arm walls.

[0010] In one embodiment, the method includes closing the collection valve and the exhaust valve and opening an intake valve to regulate a pressure differential across the collection valve before opening the collection valve to purge the debris from between the collection valve and the bypass valve through the bypass valve. This provides greater control over debris purging. The pressure on the side of the purge valve facing the collection valve may be adjusted to be different from the pressure on the opposite side of the collection valve, i.e., the bypass valve side. In particular, being adjusted above this pressure helps to purge debris away from the collection valve.

[0011] In one embodiment, the intake valve is the purge valve. This allows the purge valve to be used for multiple purposes, resulting in an efficient system configuration.

[0012] In one embodiment, during purging, the flow from the purge valve is kept small compared to the flow from the reactor. This reduces or prevents backflow into the reactor even if the bypass valve is partially or completely blocked.

[0013] According to a second aspect, a chemical vapor deposition (CVD) system is disclosed. The system includes a reactor that produces a deposition product, a collection chamber that processes the deposition product to provide a CVD product, a bypass valve for the collection chamber, and a gas distribution system (GDS) that transfers the deposition product from the reactor to the collection chamber. The GDS may include at least a collection valve between the reactor and the collection chamber, and a purge valve between the collection valve and the collection chamber. The system may further include one or more controllers to control the bypass valve, the collection valve, and the purge valve.

[0014] The one or more controllers may be configured to open the collection valve and the purge valve while the bypass valve is open to purge debris from between the collection valve and the bypass valve through the bypass valve, and to close the purge valve and open the collection valve to direct the deposition product from the reactor to the collection chamber for processing.

[0015] What has been said above in relation to the first embodiment is also applicable to the second embodiment.

[0016] In one embodiment, the one or more controllers are configured to close the purge valve together with the bypass valve to direct the deposition product from the reactor to the collection chamber for processing.

[0017] In one embodiment, the system includes an exhaust valve for the collection chamber, and the one or more controllers are configured to open the collection valve together with the exhaust valve to direct the deposition product from the reactor to the collection chamber for processing.

[0018] In one embodiment, the bypass valve and the exhaust valve are controlled valves, and the one or more controllers are configured to move the bypass valve from an open position to a closed position when the exhaust valve moves from a closed position to an open position to direct the deposition product from the reactor to the collection chamber for processing. This allows the bypass valve and the exhaust valve to be partially open simultaneously. This allows the flow direction to be gradually reversed from the bypass direction to the collection chamber direction without abrupt changes. A uniform quality of the resulting CVD product can be achieved. Also, the reactor pressure can be kept constant, which reduces particle detachment from the walls of the reactor and collection arm.

[0019] In one embodiment, the one or more controllers are configured to close the collection valve and the exhaust valve and open an intake valve to regulate a pressure differential across the collection valve before opening the collection valve to purge the debris from between the collection valve and the bypass valve through the bypass valve.

[0020] In one embodiment, the intake valve is the purge valve.

[0021] In one embodiment, the one or more controllers are configured to maintain flow from the purge valve small relative to flow from the reactor during purging. This can act as a security measure to prevent the reactor from being contaminated with debris even if the exhaust arm becomes clogged during purging.

[0022] What has been said above with respect to the embodiments of the first aspect is also applicable to the embodiments of the second aspect.

[0023] The disclosed CVD system is capable of generating a large amount of reflux gas flow in the gas distribution system (GDS). This reflux gas flow can accumulate debris that enters the collection chamber and contaminates the deposition product.

[0024] The disclosed solution provides a valve control sequence that allows for purging portions of the gas distribution system that are not purged during normal operation of the system. The provided valve control sequence can reduce the amount of debris in the collection chamber and in the product produced in the reactor, improving yield and quality.

[0025] In this specification, when a valve is "open," it may mean that the valve is partially open, or that the valve is completely open. Similarly, in this specification, when a valve is "closed," it may refer to the valve being partially closed, or it may refer to the valve being completely closed.

[0026] It should be understood that the above-described aspects and embodiments can be used in any combination with each other. Some aspects and embodiments can be combined to form further embodiments of the present invention. [Brief explanation of the drawings]

[0027] The accompanying drawings are included to provide a further understanding, constitute a part of this specification, and together with the description serve to explain the principles of the present disclosure.

[0028] [Figure 1] 1 illustrates a valve control according to one or more embodiments. [Figure 2] 1 illustrates a valve control according to one or more embodiments. [Figure 3] 1 illustrates a valve control according to one or more embodiments. [Figure 4] 1 illustrates a valve control according to one or more embodiments. [Figure 5] 1 illustrates a valve control according to one or more embodiments. [Figure 6] 1 illustrates a valve control according to one or more embodiments. [Figure 7] 1 illustrates a valve control according to one or more embodiments. [Figure 8] 1 illustrates a method according to one embodiment.

[0029] In the accompanying drawings, the same reference signs are used to denote equivalent or at least functionally equivalent parts. DETAILED DESCRIPTION OF THE INVENTION

[0030] The detailed description provided below in connection with the accompanying drawings is intended to illustrate the embodiments and is not intended to represent the only manner in which the embodiments may be constructed or utilized. However, the same or equivalent functions and structures may be accomplished by different examples.

[0031] 1-7 illustrate valve control according to one or more embodiments. The valve control disclosed herein may be implemented using a chemical vapor deposition (CVD) system 100 (hereinafter also referred to as the "system"). In particular, the CVD system may be a floating catalyst chemical vapor deposition (FCCVD) system or an aerosol CVD system.

[0032] The system includes a reactor 110, such as an FCCVD reactor, which may be configured to produce a deposition product. The reactor may be configured to produce the deposition product using a catalyst such as an aerosol. The system also includes a collection chamber 120, which may be configured to process the deposition product to provide a CVD product. Processes performed in the collection chamber 120 include deposition, such as chemical vapor deposition, product collection, isolation, processing in a vacuum system, product removal, and any combination thereof. The deposition products include or consist of nanostructures, such as high aspect ratio molecular (HARM) structures. The length of the HARM structure may be 50 to 10,000 times or more the maximum diameter. In this respect, the HARM structure can be considered to be substantially one-dimensional. The HARM structure comprises or consists of carbon nanostructures, for example, carbon nanotubes (CNTs), such as single-walled CNTs and / or multi-walled CNTs, carbon nanobuds (molecules in which fullerene molecules are covalently attached to the sides of carbon nanotubes), carbon nanoribbons, or any combination thereof. Additionally or alternatively, the HARM structure may comprise other types of HARM structures, for example cellulose fibers, nanorods or nanowires such as silver nanowires or III-V semiconductor nanowires. The HARM structure may comprise or consist of uncoated structures and / or coated structures such as coated CNTs. The deposition product may be deposited within the generally planar network of the HARM structure. The HARM structures may be substantially randomly oriented within the network. The HARM structure may be a conductive HARM structure.

[0033] The system includes a gas distribution system (GDS) 130, which may be configured to transport the deposition product from the reactor to a collection chamber. The GDS may comprise multiple arms. The supply of gas through any or all of the arms may be controlled by valves located in the corresponding arms. For example, the GDS may include a pathway from the reactor to a collection chamber, which may be formed by one or more arms. A reactor arm 132 may be provided to transport the deposition product from the reactor, which may be directly or indirectly connected to a collection arm 134 that transports the deposition product to a collection chamber. The reactor arm and the collection arm may be joined as a single integral arm. In such a case, the reactor arm corresponds to the region on the reactor side of the integral arm, and the collection arm corresponds to the region on the chamber side of the integral arm.

[0034] The system may also include a bypass arm 136 that directs gas flow away from the reactor and collection chamber. The bypass arm may be configured to direct gases from the collection chamber to a bypass outlet in a direction away from the reactor. A filter may be located at the bypass exhaust to collect and then discard the deposition products. The bypass arm may be considered part of the GDS.

[0035] The collection arm, reactor arm, and bypass arm may, for example, extend away from one another from a common origin. They may be arranged in a T-shaped pattern as shown in FIGS. The GDS may also include a monitoring and / or cleaning window 138, for example, on an extension arm of the GDS. The extension arm may be configured separate from the reactor arm, the bypass arm, and the collection arm. An extension arm may be joined to one or more of the arms and extend away from the corresponding arm. For example, it may extend from the origin as shown.

[0036] The system may include a collection valve 140, which may be considered part of the GDS. A collection valve may be located between the reactor and the collection chamber, particularly the collection arm. The collection valve may be configured to, in an open position, partially or completely permit gas flow to facilitate transport of deposition products from the reactor to the collection chamber. The system may be configured such that the exhaust valve, defined below, must also be partially or fully opened to allow gas flow to transfer the deposition product from the reactor to the collection chamber. The collection valve may be configured to, in a closed position, partially or completely block gas flow to prevent transfer of deposition products from the reactor to the collection chamber. The collection valve may be a control valve that can assume one or more positions, for example continuously, between a maximum open position and a maximum closed position. This allows the opening of the collection valve to be adjusted.

[0037] The system may also include a bypass valve 142, which may be considered part of the GDS. This allows the collection chamber to be bypassed or bypassed along with the collection arm. The bypass valve may be located at a location remote from the reactor and collection chamber, particularly the bypass arm. A bypass valve may be configured to allow the flow of gas from the reactor to bypass the collection chamber. The bypass valve may be configured to, in an open position, partially or completely permit gas flow to facilitate transport of deposition products from the reactor to the bypass outlet. The bypass valve may be configured to, in a closed position, partially or completely block gas flow to prevent transfer of deposition products from the reactor to the bypass exhaust. The bypass valve may be a control valve that can assume one or more positions, for example continuously, between a maximum open position and a maximum closed position. This allows the opening of the bypass valve to be adjusted.

[0038] The system may include a purge valve 144, which may be considered part of the GDS. The purge valve may be located between the collection valve and the collection chamber, particularly the collection arm. The purge valve may be configured to facilitate the release of purge gas into the GDS to purge the GDS. Nitrogen is a particularly useful example of a purge gas, although it should be understood that any gas known to those skilled in the art to be suitable for purging debris from a GDS may be utilized. The purge valve may be a directional valve or a non-directional valve. In particular, the purge valve may be configured to facilitate the release of gas through the collection valve when the collection valve is open to purge debris from the vicinity of the collection valve toward the bypass valve. The purge valve may be configured to, in an open position, partially or completely allow gas flow to facilitate the transfer of debris between the reactor and the collection valve to the bypass valve or to the bypass exhaust when the bypass valve is open. In the closed position, the purge valve may prevent the aforementioned gases from entering the GDS, particularly the collection arm. The purge valve may be a control valve that can assume one or more positions, for example continuously, between a maximum open position and a maximum closed position. This allows the opening of the purge valve to be adjusted.

[0039] The system may include an exhaust valve 146 for the collection chamber. The exhaust valves may be considered part of the GDS. The exhaust valve may be located in the collection chamber or downstream from the collection chamber, for example in the collection arm. The exhaust valve may be configured to facilitate removal of gas from the collection chamber, particularly in a direction away from the collection valve (along the gas transport path). The exhaust valve may be configured to, in an open position, partially or completely allow gas flow to facilitate removal of gas from the collection chamber. The exhaust valve may be configured to, in a closed position, partially or completely block the flow of gas to prevent gas from being removed from the collection chamber through the exhaust valve. The exhaust valve may be a control valve that can assume one or more positions, for example continuously, between a maximum open position and a maximum closed position. This allows the opening of the exhaust valve to be adjusted. The transfer of gas to and from the collection chamber may be controlled by at least an exhaust valve and / or a collection valve. The purge valve (and / or intake valve, defined below) may be provided with an open connection to the collection chamber for gas transfer.

[0040] The system may include one or more controllers 150 to control any or all of the valves. This applies to any or all of the bypass valves, collection valves, purge valves and exhaust valves. To this end, one or more controllers may include one or more processors 152 . To the same end, one or more controllers may also include one or more memories 154 . The one or more memories may include instructions that, when executed by the one or more processors, cause any of the valve control related operations disclosed herein to be performed. One or more controllers may be configured to control any or all of the valves via wired and / or wireless connections.

[0041] Any or all of the valves referred to herein may be electrically, pneumatically or hydraulically controllable valves. Thus, any or all of the valves may be automatic or actuated valves. Any or all of the valves may incorporate actuators that automate the opening, closing or adjustment of the valves based on external signals or commands, particularly from one or more controllers. The actuators may be powered by any combination of electricity, compressed air (pneumatic), or compressed fluid (hydraulic). In particular, as mentioned above, any or all of the valves may be control valves, such as throttle valves. This allows these valves to be controlled to one or more intermediate positions between a fully open and a fully closed position. Any or all of the valves may be configured to allow such control to be stepped and / or continuous. Alternatively, the valves may be controlled individually, in selected groups, or together. Any or all of the valves may be configured to allow for incremental adjustment of valve position, thereby allowing for fine control of gas flow through the valves. In particular, a control valve having a throttle valve can maintain a specific flow rate.

[0042] Debris 160 can accumulate between the collection valve and the bypass valve. In particular, debris can accumulate in the reactor-side collection valve. The valve control disclosed herein can prevent such debris from entering the collection chamber.

[0043] Valve control may include any or all of the actions disclosed herein. Valve control may be implemented as a valve control sequence that may be programmed for one or more controllers, for example as contained in instructions. For purposes of illustrating valve control, in Figures 1-7, closing valves are shown as crossed (valves 140, 144, 146 in Figure 1) and opening valves are shown as uncrossed (valve 142 in Figure 1). In particular, the valve control may include one or more of the conditions described below, and one or more controllers may be configured accordingly. In particular, the valve control may include a fourth state followed by a sixth state and / or a seventh state. Optionally, valve control may also include any or all of the other conditions.

[0044] As shown in FIG. 1, in a first state, for example, when reactor 110 is operating to provide deposition product, collection valve 140 is maintained in a closed state, while bypass valve 142 is opened. This allows the deposition products and any possible carrier gas to be transported to the bypass exhaust. In this state, the deposition product is directed from the reactor through the bypass valve to the bypass exhaust (170). In this way, the path to the collection chamber is blocked for the deposition products. In this state, the purge valve 144 and / or the exhaust valve 146 are also closed. The first state may be considered an initial state before the deposition product is collected in the collection chamber.

[0045] As shown in FIG. 2, in a second state, the intake valve is opened and the collection and exhaust valves are closed to regulate the pressure differential across the collection valve. To adjust the pressure difference, a gas such as nitrogen may be introduced through an intake valve. As shown, the intake valve may be the purge valve 144, but may also be a different valve (not shown). The pressure difference on the side of the collection valve where the intake valve is located may be greater. Therefore, the opposite side of the collection valve, i.e., the bypass valve side, may be at a lower pressure than the collection chamber and / or the space between the intake valve and the collection valve. The bypass valve may be opened.

[0046] The system may include one or more pressure gauges to facilitate adjustment of the pressure differential. To this end, the (first) pressure gauge may be configured to measure the pressure downstream of the collection valve, e.g., in the collection arm, and / or the (second) pressure gauge may be configured to measure the pressure upstream of the collection valve, e.g., in the collection arm or reactor arm. The one or more pressure gauges may be connected to one or more controllers to facilitate adjustment.

[0047] As shown in FIG. 3, in a third state, the collection valve 140 may be open, but the exhaust valve is closed. When the bypass valve 142 is open, flow from the reactor (eg, deposition products) is still directed entirely or primarily toward the bypass valve, eg, the bypass outlet (170). A bypass exhaust facilitates this by providing a drain for the flow. When the pressure differential is regulated, for example as shown with reference to the second state, flow is also directed towards the bypass valve. The intake valve and / or the purge valve 144 may be closed.

[0048] As shown in FIG. 4, in a fourth state, a purge may be performed. For purging, the collection valve 140, the bypass valve 142 and the purge valve 144 may all be opened. This allows debris 160 to be purged 172 through the bypass valve and from between the collection valve and the bypass valve. Gas from the purge valve, ie, purge gas, can push debris toward the bypass valve and transport it to the bypass exhaust. The system may include one or more filters to remove debris. Purging may be performed before collection, i.e., before the deposition products are transferred to the collection chamber for processing. This can reduce debris entering the collection chamber. The exhaust valve 146 may be closed. This can reduce the flow into the collection chamber. Processes performed in the collection chamber include deposition, such as chemical vapor deposition, product collection, isolation, processing in a vacuum system, product removal, and any combination thereof.

[0049] The flow of deposition product from the reactor to the bypass valve and bypass exhaust (170) can occur simultaneously. During purging, the flow from the purge valve may be kept less than the flow from the reactor.

[0050] As shown in FIG. 5, in a fifth state, the collection valve 140, the bypass valve 142, and the purge valve 144 may be open, but the exhaust valve 146 is also open. This also allows for purging. However, flow (174) into the collection chamber 120 is also permitted. Purge may be performed in this state, but may also be used as a transition state from purge to the collect state where processing occurs.

[0051] As shown in FIG. 6, in the sixth state, the collection valve 140, the bypass valve 142, and the exhaust valve 146 are open, allowing the flow of (deposition product) from the reactor 110 to be directed (170) toward the bypass valve / bypass exhaust port, as well as directed (176) toward the collection chamber 120. The intake valve and / or the purge valve 144 may be closed. Collection may be performed in this state, but may also be used as a transition state from the purge to collection state, for example after the fifth state.

[0052] As shown in FIG. 7, in the seventh state, collection may be performed. This may be considered the collection state. The collection valve 140 and exhaust valve 146 are opened, allowing the flow of (deposition product) from the reactor 110 to be directed 176 towards the collection chamber 120 . The intake valve and / or the purge valve 144 may be closed. The bypass valve 142 may also be closed, thereby cutting off the flow of deposition products to the bypass exhaust. This also allows for a significant increase in flow from the reactor to the collection chamber.

[0053] An example process is to first adjust the pressure difference between the surrounding volumes on different sides of the collection valve. The collection valve is then opened, but the exhaust valve remains closed. An inlet valve located on the same arm downstream of the collection valve is then opened, allowing gas to flow through the open collection valve in the opposite direction to the normal flow direction, i.e., upstream (towards the reactor and / or bypass valve). The exhaust valve is then opened to allow gas to flow into the collection chamber. Then, the intake valve is closed. Finally, close the bypass valve found to correspond to the arm through which gas is flowing before starting the sequence.

[0054] The valves do not need to be opened in the strict order shown above for the system to work successfully. What is important is the ability to perform purging and collection. For example, one or more valves may be opened and / or closed simultaneously or in different sequences. Because the valves include one or more control valves, one or more valves may be sequentially closed while one or more other valves are sequentially closed.

[0055] As an example, a transition from the fourth state to the sixth or seventh state may be performed such that the exhaust valve is opened and / or the bypass valve is closed and the purge valve is closed. In response, the exhaust valve may be opened while the bypass valve and / or purge valve are closed. During this process, the exhaust valve may be partially open, and the bypass valve and / or purge valve are partially open.

[0056] As another example, the purge valve may be closed after purging, which may be done before or after the exhaust valve is opened. Additionally or alternatively, this may occur before or after the bypass valve is closed.

[0057] It should be noted that in general, directing flow from the reactor and / or intake valves may be performed by opening and / or closing the valves.

[0058] FIG. 8 illustrates an example of a method 800 . In the method, one or more steps may be performed simultaneously or in a different order. The method may be utilized in any of the systems disclosed herein.

[0059] The method includes opening (810) the collection valve and the purge valve while the bypass valve is open to purge debris from between the collection valve and the bypass valve through the bypass valve. The method then includes closing the purge valve and opening the collection valve (820) to direct the deposition product from the reactor to a collection chamber for processing.

[0060] It should be understood that the number of collection chambers 120 may be two or more. Therefore, it should be understood that all embodiments disclosed herein also apply to systems including one or more additional collection chambers that may be configured for chemical vapor deposition of deposition products. The solutions disclosed herein for any single collection chamber (e.g., including the collection arm, collection valve, purge valve, exhaust valve, and their operation) can be replicated for any or all of one or more additional collection chambers. Having multiple collection chambers allows for selection of processing locations. For any or all of these, the disclosed solution for purging debris can be used, especially in the collection valves that control access to the corresponding collection chambers.

[0061] Various functions described herein may be performed in different orders and / or concurrently with one another.

[0062] Any range or device value given herein may be expanded or modified without losing the effect sought, unless otherwise indicated. Also, any embodiment may be combined with another embodiment unless expressly prohibited.

[0063] Although the subject matter has been described in language specific to structural features and / or operations, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the particular features or operations described above. Rather, the specific features and acts described above are disclosed as example forms of implementing the claims and other equivalent features and acts are intended to be within the scope of the claims.

[0064] It should be understood that the benefits and advantages described above may relate to one embodiment or to several embodiments. The embodiments are not limited to those that solve any or all of the stated problems or have any or all of the stated benefits and advantages. Furthermore, it should be understood that a reference to "an" item may refer to one or more of those items.

[0065] As used herein, the term "comprising" means including the specified methods, blocks, or elements, but such blocks or elements are not inclusive and the method or apparatus may include additional blocks or elements.

[0066] Numerical descriptors such as "first", "second", etc. are used in this context simply as a way to distinguish between parts with similar names. The numerical descriptors should not be construed as indicating any particular order, such as priority, order of manufacture, or order of appearance in any particular structure.

[0067] Although the present invention has been described in conjunction with particular types of apparatus and / or methods, it should be understood that the present invention is not limited to any particular types of apparatus and / or methods. While the present invention has been described in connection with numerous examples, embodiments, and implementations, the present invention is not limited thereto, but rather includes various modifications and equivalent arrangements included within the scope of the appended claims. While various examples have been described above with a certain degree of particularity or with reference to one or more individual embodiments, those skilled in the art could make numerous modifications to the disclosed examples without departing from the scope of the present specification.

Claims

1. 1. A method of controlling valves in a chemical vapor deposition (CVD) system having a reactor for producing a deposition product, a collection chamber for processing the deposition product, and a gas distribution system (GDS) for transporting the deposition product from the reactor to the collection chamber, comprising: opening a collection valve of the GDS between the reactor and the collection chamber and a purge valve of the GDS between the bypass valve and the collection chamber while the bypass valve is open to purge debris from between the purge valve and the bypass valve through the bypass valve of the collection chamber; and closing the purge valve and opening the collection valve to direct the deposition product from the reactor to the collection chamber for processing.

2. 10. The method of claim 1, wherein the purge valve is closed along with the bypass valve to direct the deposition product from the reactor to the collection chamber for processing.

3. 3. The method of claim 1, wherein the collection valve is opened together with an exhaust valve of the collection chamber to direct the deposition product from the reactor to the collection chamber for processing.

4. 4. The method of claim 3, wherein the bypass valve and the exhaust valve are control valves, and the bypass valve moves from an open position to a closed position when the exhaust valve moves from a closed position to an open position to direct the deposition product from the reactor to the collection chamber for processing.

5. 5. The method of claim 3 or 4, comprising closing the collection valve and the exhaust valve and opening an intake valve to regulate a pressure differential across the collection valve before opening the collection valve to purge the debris from between the collection valve and the bypass valve through the bypass valve.

6. The method of claim 5 wherein the intake valve is the purge valve.

7. 7. The method of any one of claims 1 to 6, wherein during purging, the flow from the purge valve is kept small compared to the flow from the reactor.

8. 1. A chemical vapor deposition (CVD) system comprising: a reactor for producing a deposition product; a collection chamber bypass valve; the collection chamber for processing the deposition product; a gas distribution system (GDS) that transports the deposition product from the reactor to the collection chamber, the GDS comprising: a collection valve between the reactor and the collection chamber; a purge valve between the collection valve and the collection chamber; and one or more controllers for controlling the bypass valve, the collection valve, and the purge valve, wherein the one or more controllers opening the collection valve and the purge valve while the bypass valve is open to purge debris from between the collection valve and the bypass valve through the bypass valve; A chemical vapor deposition (CVD) system configured to close the purge valve and open the collection valve to direct the deposition product from the reactor to the collection chamber for processing.

9. 9. The system of claim 8, wherein the one or more controllers are configured to close the purge valve along with the bypass valve to direct the deposition product from the reactor to the collection chamber for processing.

10. 10. The system of claim 8 or 9, further comprising an exhaust valve for the collection chamber, wherein the one or more controllers are configured to open the collection valve together with the exhaust valve to direct the deposition product from the reactor to the collection chamber for processing.

11. 11. The system of claim 10, wherein the bypass valve and the exhaust valve are controlled valves, and the one or more controllers are configured to move the bypass valve from an open position to a closed position when the exhaust valve moves from a closed position to an open position to direct the deposition product from the reactor to the collection chamber for processing.

12. 12. The system of claim 10 or 11, wherein the one or more controllers are configured to close the collection valve and the exhaust valve and open an intake valve to regulate a pressure differential across the collection valve before opening the collection valve to purge the debris from between the collection valve and the bypass valve through the bypass valve.

13. The system of claim 12 wherein the intake valve is the purge valve.

14. 14. The system of any one of claims 8 to 13, wherein the one or more controllers are configured to maintain a small flow from the purge valve compared to a flow from the reactor during purging.

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