Semiconductor light-emitting device, light-emitting module, and

Abstract

To provide a light-emitting device which prevents leakage light and stray light, has excellent light distribution characteristics, and has high optical coupling property to a light guide body, and to provide a light-emitting module and a light source assembly.SOLUTION: A light emitting device includes a light emitting element 20 having a light extraction surface and an element electrode surface facing the light extraction surface and provided with a pair of element driving electrodes, and a light conversion member 30 having a light incident surface and a light emission surface facing the light incident surface, the light incident surface being bonded to the light extraction surface of the light emitting element by a translucent adhesive. The light emitting element is provided with a first light shielding film 25 covering the light emitting element except a light extraction surface and a formation region of a pair of element driving electrodes, and the light conversion member is provided with a second light shielding film 35 covering the light conversion member except a light incident surface and an opening region which is a light emission part of a light emission surface.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to semiconductor light emitting devices, light emitting modules and light source assemblies.

[0002] 2. Description of the Related Art Conventionally, there is known a light emitting device comprising a semiconductor light emitting element and a light transmissive member such as a phosphor, in which a light reflective layer is provided on the side of the semiconductor light emitting element or the light transmissive member.

[0003] For example, Patent Document 1 discloses a light emitting device having a reflecting structure that at least partially surrounds the sides of a light output section made of a semiconductor diode and a phosphor.

[0004] Furthermore, Patent Document 2 discloses a semiconductor light emitting device in which the areas of the semiconductor light emitting element and the wavelength conversion member other than the light extraction area are covered with a light reflecting layer by atomic layer deposition method. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Special Publication No. 2011-515846 [Patent Document 2] Patent No. 6398323 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the above-described conventional semiconductor light-emitting devices, it is difficult to simultaneously condense the emitted light into a collimated luminous flux and prevent light from leaking out the side surfaces of the light-emitting device.

[0007] The present invention has been made in consideration of the above-mentioned points, and aims to provide a light emitting device that prevents leakage light and stray light, has excellent light distribution characteristics, and has high optical coupling to a light guide, a light emitting module that includes the light emitting device, and a light source assembly that prevents leakage light and stray light, and has high optical coupling to a light guide. [Means for solving the problem]

[0008] A semiconductor light emitting device according to one embodiment of the present invention comprises: a light emitting element having a light extraction surface and an element electrode surface facing the light extraction surface and having a pair of element driving electrodes provided thereon; a light conversion member having a light incident surface and a light exit surface facing the light incident surface, the light incident surface being adhered to the light extraction surface of the light emitting element by a light-transmitting adhesive; the light-emitting element is provided with a first light-shielding film that covers the light-emitting element except for the light extraction surface and an area where the pair of element driving electrodes are formed; The light conversion member is provided with a second light-shielding film that covers the light conversion member except for the light incident surface and an opening region that is a light exit portion of the light exit surface.

[0009] Another embodiment of the light emitting module of the present invention includes: a plurality of the semiconductor light emitting devices; a base having wiring electrodes and a frame having a light-absorbing standing portion standing on the base, The plurality of semiconductor light emitting devices are mounted on the wiring electrodes and spaced apart from one another by gaps.

[0010] In yet another embodiment of the present invention, the light source assembly comprises: a circuit board on which a plurality of the semiconductor light emitting devices are mounted and spaced apart from one another by gaps; a light guide having a flat light incident end surface; a light guide support portion that supports the light guide; and an adjusting and fixing portion that fixes the circuit board to the light guide support portion while separating the light incident end surface of the light guide and the light emitting portions of the plurality of semiconductor light emitting devices from each other by a gap. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a perspective view schematically showing a light emitting device according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view schematically showing a cross section of the light emitting device taken along line AA shown in FIG. [Figure 3] FIG. 4 is a partially enlarged cross-sectional view showing an enlarged cross section of an outer edge portion of a phosphor plate of the light conversion unit. [Figure 4] FIG. 10 is a diagram showing the results of a simulation of the reflectance (%) of a light-shielding film versus the incident wavelength (nm). [Figure 5A] FIG. 2 is a diagram schematically illustrating the light distribution of the light emitting device of the first embodiment. [Figure 5B] FIG. 10 is a diagram schematically illustrating the light distribution of a conventional light emitting device. [Figure 6] 3A to 3C are diagrams illustrating steps in a method for manufacturing a light emitting element component. [Figure 7] 5A to 5C are diagrams illustrating steps in a method for manufacturing an optical conversion unit. [Figure 8] 10A to 10C are diagrams illustrating a bonding process for a light emitting element section and a light conversion section. [Figure 9] FIG. 1 is a perspective view schematically showing a light emitting device according to a first modified example of the first embodiment. [Figure 10A] FIG. 4 is a diagram showing the measurement results of the light distribution characteristics of the light emitting device of the first embodiment. [Figure 10B] FIG. 10 is a diagram showing the measurement results of the light distribution characteristics of the light emitting device according to Modification 1 of the first embodiment. [Figure 11] FIG. 10 is a perspective view schematically showing a light-emitting module according to a second embodiment. [Figure 12] FIG. 10 is an exploded view schematically illustrating a light source assembly according to a third embodiment. [Figure 13] 13 is a cross-sectional view schematically showing a cross section of the light source assembly taken along line BB shown in FIG. 12. FIG. [Figure 14A] FIG. 11 is a perspective view schematically showing a light emitting module in a first modified example of the light source assembly of the third embodiment. [Figure 14B] 14B is a cross-sectional view showing a cross section of the light-emitting module taken along line CC shown in FIG. 14A. DETAILED DESCRIPTION OF THE INVENTION

[0012] In the following, preferred embodiments of the present invention will be described, but these may be modified and combined as appropriate. In the following description and accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals.

[0013] [First embodiment] Fig. 1 is a perspective view schematically showing a light emitting device 10 which is a semiconductor light emitting device according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing the cross section of the light emitting device 10 taken along line AA shown in Fig. 1.

[0014] The light emitting device 10 has a light emitting element section 20 and a light conversion section 30 bonded to the light emitting element section 20 by an adhesive layer 12. The adhesive layer 12 is made of a light-transmitting adhesive material, and for example, a silicone resin can be used.

[0015] The light emitting device 10 has an opening 15 provided on the upper surface of the light conversion part 30, and the opening 15 functions as a light emitting part of the light emitting device 10. In this specification, the terms "upper surface," "upper side," etc. refer to the opening 15 (light emitting part EW) side. The light-emitting element section 20 has a light-emitting element 21. In this embodiment, a case will be described in which the light-emitting element 21 is an LED. The light-emitting element 21 has a rectangular parallelepiped shape. The light-emitting element 21 has a light extraction surface 21E and an element electrode surface 21F facing the light extraction surface 21E. The light conversion section 30 is adhered onto the light extraction surface 21E by an adhesive layer 12.

[0016] In the light emitting device 10, the light emitting element 21 includes a substrate 21A such as a growth substrate or a support substrate, and a light emitting semiconductor layer 21B formed on the substrate 21A and having an active layer 21K. On the element electrode surface 21F, a first element electrode 23A (e.g., a p-electrode) and a second element electrode 23B (e.g., an n-electrode) are provided as a pair of element driving electrodes to which a voltage is applied to drive the light emitting semiconductor layer 21B to emit light.

[0017] The back surface of the substrate 21A of the light emitting element 21 (the surface opposite to the interface with the light emitting semiconductor layer 21B) is the light extraction surface 21E.

[0018] The light-emitting element 21 is covered with a light-shielding film 25 (first light-shielding film) except for the light extraction surface 21E and the area where the first element electrode 23A and the second element electrode 23B are formed. In other words, the side surface (including the edge portion) of the light-emitting element 21 and the element electrode surface 21F excluding the area where the element electrodes 23A and 23B are formed are covered with the light-shielding film 25. The light-shielding film 25 is made of a dielectric multilayer film.

[0019] In this embodiment, the light-emitting element 21 comprises a substrate 21A such as a growth substrate or a support substrate, and a light-emitting semiconductor layer 21B formed on the substrate 21A and having an active layer 21K, and the light conversion section 30 is adhered to the substrate 21A (i.e., to the surface opposite the element electrode surface 21F) by an adhesive layer 12.

[0020] In the light emitting element 21, the light emitting element section 20 and the light conversion section 30 are bonded together in a junction-down configuration. This structure can prevent light emitted from the light emitting semiconductor layer 21B from leaking out from the side surfaces of the adhesive layer 12. This is because the horizontal component of the light emitted from the light emitting semiconductor layer 21B is scattered and reduced by the side surfaces of the substrate 21A when it passes through the substrate 21A.

[0021] The light emitting element 21 is, for example, a blue-emitting GaN-based semiconductor light emitting element, and the substrate 21A is a sapphire substrate. However, the light emitting element 21 is not limited to this, and light emitting elements with various emission wavelengths and crystal compositions can be used.

[0022] The light conversion unit 30 has a phosphor plate 31 which is a light conversion member. The light conversion unit 30 has a light incident surface 31F and a light exit surface 31E facing the light incident surface 31F. The phosphor plate 31 emits light of a chromaticity different from the chromaticity of the light emitted by the light emitting element 21 from a light exit portion EW which is a part of the light exit surface 31E.

[0023] More specifically, phosphor plate 31 has a rectangular parallelepiped shape and is covered with light-shielding film 35 (second light-shielding film) except for light incident surface 31F and the area of ​​opening 15 in light exit surface 31E. Light-shielding film 35 is made of a dielectric multilayer film. A part of light exit surface 31E (upper surface) of phosphor plate 31 is exposed from opening 15, and this exposed part functions as light exit portion EW from which light is actually emitted.

[0024] The phosphor plate 31 is a plate material in which a YAG phosphor (with Ce added) is dispersed in a light-scattering alumina (Al2O3) base material. Hereinafter, this will be referred to as alumina / YAG. The phosphor plate 31 internally scatters the light emitted from the light-emitting element 21 (blue light in this embodiment) and the light radiated from the phosphor (yellow light in this embodiment), and then diffuses and emits the light from the light exit surface 31E. As a result, the light emitted from the light exit surface 31E has a Lambertian light distribution.

[0025] For the phosphor plate 31, a phosphor and a base material suitable for the phosphor can be selected according to the emitted color. For example, glass / α-sialon, which is made up of an α-sialon phosphor that emits orange light and a glass (quartz, night glass, borosilicate glass, soda glass, low-melting glass, etc.) base material; glass / β-sialon, which is made up of a β-sialon phosphor that emits green light and a glass base material; glass / orthosilicate, which is made up of an orthosilicate phosphor that emits yellow light and a glass base material; or glass / YAG, which is made up of a YAG phosphor that emits yellow light and a glass base material. Light-scattering particles such as hollow glass microbeads, alumina, yttrium phosphate (Y3PO4), and titanium oxide can also be added to the phosphor plate.

[0026] Although the case where light conversion section 30 is made of a phosphor will be described, light conversion section 30 may also be made of a combination of quantum dot wavelength conversion particles and a hard resin. It is preferable that the light-emitting element 21 and the phosphor plate 31 have the same shape and the same footprint. That is, it is preferable that the adhesive surfaces of the light-emitting element 21 and the phosphor plate 31 have the same shape and size, and are aligned and bonded so that their adhesive surfaces match. In this case, no step is created between the light-emitting element 21 and the phosphor plate 31 at the adhesive joint, preventing unnecessary leakage and stray light. It is also preferable that the side surface of the adhesive layer 12 is recessed from the plane connecting the upper edge of the light-emitting element section 20 and the lower edge of the light conversion section 30. Furthermore, it is preferable that the recessed side surface of the adhesive layer 12 has a curved shape. This prevents unnecessary leakage and stray light from emitting from the side surface of the adhesive layer 12.

[0027] In the light emitting device 10 of this embodiment, the light emitting element 21 and the phosphor plate 31 preferably have a rectangular parallelepiped shape, and the cross sections perpendicular to the light emitting semiconductor layer 21B have the same size (i.e., vertical and horizontal lengths), and are aligned and bonded together to form a single rectangular parallelepiped shape as a whole. Note that the light-shielding films 25 and 35 are sufficiently thin (thickness: several μm) compared to the sizes of the light emitting element 21 and the phosphor plate 31. Therefore, the light emitting device 10 is provided as a light emitting device having a single rectangular parallelepiped shape as a whole.

[0028] Furthermore, in light emitting device 10 of this embodiment, light (blue light) emitted from light emitting semiconductor layer 21B passes through the translucent sapphire single crystal and is scattered within phosphor plate 31 before being emitted. Furthermore, fluorescence (yellow light) emitted within phosphor plate 31 is also scattered within phosphor plate 31 before being emitted. Therefore, the light emitted from light emission surface 31E of phosphor plate 31 becomes white light with a Lambertian light distribution.

[0029] (1) Structure of the light-shielding film 3 is a partially enlarged cross-sectional view showing an enlarged cross section of the outer edge of the phosphor plate 31 of the light conversion unit 30. Incident lights L1 and L2 from the light emitting element 21 are also shown.

[0030] The light-shielding film 35 of the phosphor plate 31 is made of two dielectric films with different refractive indices. In this embodiment, the light-shielding film 35 has a multilayer reflective film 35A (dielectric multilayer film) in which alumina (Al2O3) films as first dielectric films 35p and titanium oxide (TiO2) films as second dielectric films 35q are alternately stacked in large numbers.

[0031] The first dielectric film 35p and the second dielectric film 35q each have a film thickness of λ / 4, where λ is the wavelength within the medium. Each of the first dielectric film 35p and the second dielectric film 35q is formed with, for example, 25 to 30 layers (n=25 to 30). The total thickness of the first dielectric film 35p and the second dielectric film 35q is approximately 5 μm.

[0032] The light-shielding film 35 also has a third dielectric film 35B as its outermost layer. The third dielectric film 35B is made of the same alumina (Al2O3) film as the first dielectric film 35p, and has a film thickness equal to or greater than one wavelength (wavelength within the medium: λ) of light at the long wavelength end of the light (fluorescence) emitted by the phosphor plate 31.

[0033] The third dielectric film 35B functions as a light reflecting film. It is preferable that the third dielectric film 35B is made of one of the first dielectric film 35p and the second dielectric film 35q, which has a refractive index with a critical angle with air of less than 60°. Note that the third dielectric film 35B may be made of a different dielectric material from the first dielectric film 35p and the second dielectric film 35q. Furthermore, the third dielectric film 35B may be omitted if the stray light SL, which will be described later, can be suppressed by the multilayer reflective film 35A alone. It should be noted that known materials can be used for the dielectric film of the light-shielding film 35. Specifically, the material can be appropriately selected from Al2O3, TiO2, silicon oxide (SiO2), tantalum oxide (Ta2O3), niobium oxide (Nb2O3), magnesium oxide (MgO), hafnium oxide (HfO), etc.

[0034] The light-shielding film 35 prevents light from leaking from the side and top surfaces of the phosphor plate 31. It also prevents stray light from the upper edge formed by the side and top surfaces of the phosphor plate 31 and the corner formed by the two side surfaces and top surface.

[0035] 2, the side surfaces and the underside of the light-emitting element 21, excluding the element electrodes 23A and 23B, are covered with a light-shielding film 25 having the same configuration as the light-shielding film 35 of the phosphor plate 31. That is, although not shown, the light-shielding film 25 of the light-emitting element 21 has a dielectric multilayer film (multilayer reflective film) in which two dielectric films (a first dielectric film and a second dielectric film) having different refractive indices are alternately stacked, and a dielectric film (a third dielectric film) as the outermost layer of the light-shielding film 25 outside the dielectric multilayer film.

[0036] The light-shielding film 25 prevents light from leaking from the side and bottom surfaces of the light-emitting element 21. It also prevents stray light from the upper edge formed by the side and bottom surfaces of the light-emitting element 21 and the corner formed by the two side surfaces and bottom surface.

[0037] The light-shielding film 25 of the light-emitting element portion 20 and the light-shielding film 35 of the phosphor plate 31 are provided individually for each of the light-emitting elements 21 and the phosphor plate 31. Therefore, the material, film thickness, number of pairs, total thickness, etc. of the dielectric multilayer films used for the light-shielding film 25 and the light-shielding film 35 can be appropriately set for each of the light-emitting elements 21 and the phosphor plate 31. For example, an Al2O3 / SiO2 laminated film can be used for the light-shielding film 25 of the light-emitting element 21, and an Al2O3 / TiO2 laminated film can be used for the light-shielding film 35 of the phosphor plate 31.

[0038] (2) Stray light suppression and light distribution using light-shielding film 3 and 4, the suppression of stray light by the light-shielding film 35 and the light distribution from the light output part EW of the light conversion unit 30 will be described. Fig. 4 is a diagram showing the results of a simulation of the reflectance (%) of the light-shielding film 35 versus the incident wavelength (nm).

[0039] 4 shows the reflectance when the incident angle θin on the light-shielding film 35 is set as a parameter (θin = 0°, 20°, 40°, 60°). The first dielectric film 35p and the second dielectric film 35q are made of Al2O3 films and TiO2 films, respectively, and are stacked in 25 layers each. The third dielectric film 35B is made of an Al2O3 film with a thickness of 800 nm.

[0040] 4, when the incident angle θin exceeds 60° (θin>60°), a high reflectance of 90% or more can be obtained over the entire wavelength range (in vacuum) of 400 to 800 nm. Therefore, the following description will be given assuming that the effective reflection angle θrd is 60°.

[0041] Referring again to Figure 3, incident light L1 having an incident angle θin of 60° or less (θin≦60°) on the light-shielding film 35 on the side of the phosphor plate 31 is reflected by the multilayer reflective film 35A, and the reflected light is reflected by the multilayer reflective film 35A on the upper surface of the phosphor plate 31.

[0042] Furthermore, incident light L2 having an incident angle θin exceeding 60° (θin > 60°) on the light-shielding film 35 on the side surface of the phosphor plate 31 is reflected by total reflection at the interface between the air and the third dielectric film 35B, which is the outermost layer of the light-shielding film 35. The reflected light re-enters the phosphor plate 31 and is reflected by the multilayer reflective film 35A on the upper surface of the phosphor plate 31. When the dielectric film 35B is made of Al2O3, incident light having an incident angle θin exceeding 36°, which is below the effective reflection angle θrd (60°), can be totally reflected. Thus, the light-shielding film 35 of this embodiment is a light-shielding film with a double reflection structure, in which the total reflection angle of the dielectric film 35B is within the effective reflection angle θrd of the multilayer reflective film 35A.

[0043] Therefore, incident light with an incident angle θin over the entire range is reflected by the light-shielding film 35. That is, the light-shielding film 35 prevents stray light from the upper edge formed by the side and top surface of the phosphor plate 31 and from the corner formed by the two side surfaces and top surface. In particular, when the light emitted from the light-emitting surface 31E of the phosphor plate 31 has a Lambertian light distribution as described above, the amount of stray light generated at the upper edge and corner of the phosphor plate 31 increases. Therefore, a light-shielding film 35 with a double reflection structure is preferable because it has a high blocking effect against such stray light.

[0044] FIG. 5A is a diagram schematically showing the light distribution of the light emitting device 10 of the first embodiment, and FIG. 5B is a diagram schematically showing the light distribution of the conventional light emitting device 110. As shown in FIG.

[0045] 5A schematically shows that the light emitting device 10 of the first embodiment prevents stray light SL (FIG. 5B) that occurs in a conventional light emitting device 110, and emits light with a Lambertian light distribution (half-value angle 120°) that does not include stray light. In contrast, the conventional light emitting device 110 shown in FIG. 5B has the light-shielding film 35 provided only on the side surface of the phosphor plate 31, resulting in a Lambertian light distribution that includes stray light SL.

[0046] (3) Manufacturing method of light emitting device

[0047] (3.1) Light-emitting element A method for manufacturing the light emitting element section 20 will be described below with reference to FIG.

[0048] (Step SE1) An element substrate 21EP on which a plurality of light emitting elements 21 are arranged is prepared. (Step SE2) The element substrate 21EP is attached to an expandable sheet ES and then diced into individual pieces. (Step SE3) The expandable sheet ES is stretched and separated into the individual light emitting elements 21. (Step SE4) The light emitting elements 21 are aligned on the heat-resistant lower sheet LS, and then the perforated upper sheet US having holes HL is attached onto the array of light emitting elements 21. (Step SE5) A dielectric multilayer film is formed as a light-shielding film 25 on the side surfaces of the light-emitting element 21 and on the bottom surface excluding the first and second element electrodes 23A and 23B by ALD (atomic layer deposition). (Step SE6) The heat-resistant lower sheet LS and the perforated upper sheet US are removed, and the plurality of light-emitting element units 20 are completed.

[0049] (3.2) Optical conversion unit A method for manufacturing the optical conversion section 30 will now be described with reference to FIG. (Step SP1) A plate-shaped phosphor plate PP is prepared. (Step SP2) A protective film PF corresponding to the opening 15 is formed on the light-emitting surface of the phosphor plate PP. (Step SP3) An expandable sheet ES is attached to the back side of the phosphor plate PP on which the protective film PF is formed. (Step SP4) The expand sheet ES is stretched to separate the phosphor plate PP into a plurality of phosphor plates 31. (Step SP5) The phosphor plate 31 is aligned on the heat-resistant lower sheet LS, and then the perforated upper sheet US having the holes HL is attached onto the array of light-emitting elements 21. (Step SP6) A dielectric multilayer film is formed as a light-shielding film 35 on the side surfaces and the upper surface of the phosphor plate 31 excluding the protective film PF by the ALD method. (Step SP7) The protective film PF is removed with a remover, openings 15 are formed, and the optical conversion section 30 is completed.

[0050] (3.3) Adhesion of the light-emitting element and the light-conversion element 8, (i) an adhesive (adhesive layer 12) is applied (stamped) to the back surface of the light conversion unit 30. Next, (ii) the light conversion unit 30 with the adhesive layer 12 attached is attached to the top surface of the light emitting element unit 20. Through these steps, the light emitting device 10 is completed.

[0051] As described above in detail, according to this embodiment, it is possible to provide a light emitting device that prevents leakage light and stray light and has high optical coupling to the light guide.

[0052] (4) Variations 9 is a perspective view schematically showing a light emitting device 50 according to Modification 1 of Embodiment 1. In the light emitting device 50 according to Modification 1, the light emitting portion EW (that is, the opening 15) has a rectangular shape.

[0053] More specifically, the light emitting portion EW is not limited to the above-mentioned circular shape, but may be an oval, square, rectangular, polygonal, etc. In addition, when the light emitting portion EW is rectangular, it is preferable that the corners are chamfered in an arc shape.

[0054] (5) Light distribution characteristics 10A is a diagram showing the measurement results of the light distribution characteristic of light emitting device 10 of the first embodiment. More specifically, the measurement was carried out on light emitting device 10 having a circular opening 15 (light output portion EW). The opening diameter φ of opening 15 was 0.8 mm, the size of phosphor plate 31 was 1.06 mm, the aperture ratio, which is the ratio of opening 15 to the upper surface of phosphor plate 31, was 0.45, and the luminous flux was 284 (lm).

[0055] 10A, there was no stray light, and good light distribution characteristics of Lambertian light distribution were obtained. Furthermore, the light output was reduced by -15.9% compared to the comparative example in which the light-shielding film 35 was not provided on the upper surface of the phosphor plate 31. 10B is a diagram showing the measurement results of the light distribution characteristic of light emitting device 50 of Modification 1 of the first embodiment. More specifically, the measurement was carried out on light emitting device 50 (see FIG. 9) having rectangular opening 15. The opening size of opening 15 was 0.8 mm, the size of phosphor plate 31 was 1.06 mm, the aperture ratio of opening 15 was 0.57, and the luminous flux was 331 (lm). As shown in FIG. 10B, even in the case of a rectangular opening 15, there was no stray light and good light distribution characteristics of Lambertian light distribution were obtained. Furthermore, compared to the comparative example in which no light-shielding film 35 was provided on the upper surface of the phosphor plate 31, the light output decreased by only -2.1%, and the light output characteristics were maintained. As described above, a larger aperture ratio is preferable for light output characteristics, but if it is too large, the upper surface light-shielding film 35 may peel off or become damaged. Therefore, an aperture ratio in the range of 0.45 to 0.8 is preferable. In particular, an aperture ratio of 0.55 or more is preferable because it is possible to suppress the decrease in light output to within 1% to 3%, which is approximately the same as the light output of stray light SL.

[0056] [Second embodiment] 11 is a perspective view schematically showing a light-emitting module 60 according to a second embodiment of the present invention. The light-emitting module 60 has a submount 61, which is a frame having a recess formed of a base 61A that is a circuit board and an upright portion 61B that is provided upright on the base 61A. A plurality of light-emitting devices 10 according to the first embodiment are provided in a housing space 61K, which is the internal space of the submount 61.

[0057] More specifically, a first light emitting device 10A and a second light emitting device 10B, which are the light emitting devices of the first embodiment, are mounted on a base 61A of a submount 61 in the accommodation space 61K.

[0058] The first light emitting device 10A and the second light emitting device 10B emit light of different chromaticities. Specifically, the first light emitting device 10A emits white light, and the second light emitting device 10B emits orange light (amber). The first light emitting device 10A and the second light emitting device 10B are arranged and separated by an air gap AD.

[0059] The submount 61 is formed of a light-absorbing black material that absorbs the light emitted from the first light emitting device 10A and the second light emitting device 10B. For example, a silicone resin containing a filler such as titanium oxide particles or carbon black can be used, but the material is not limited to this.

[0060] A pair of wiring electrodes 63A, 63B (p-electrode and n-electrode) are provided on the base 61A. The first element electrode 23A and the second element electrode 23B of the first light emitting device 10A are bonded to the pair of wiring electrodes 63A, 63B by a bonding material JM, respectively, and are electrically connected.

[0061] Similarly, the first element electrode 23A and the second element electrode 23B of the second light emitting device 10B are bonded to and electrically connected to another pair of wiring electrodes 64A, 64B on the base 61A by a bonding material JM.

[0062] The wiring electrodes 63A, 63B and the wiring electrodes 64A, 64B are electrically connected by via wirings VE to mounting electrodes 65A, 65B and mounting electrodes 66A, 66B provided on the rear surface of the base 61A.

[0063] As described above, by mounting a plurality of light emitting devices 10 of the first embodiment spaced apart by an air gap AD, a light emitting module can be constructed without impairing the lateral light leakage suppression characteristic of the light emitting devices 10. If the air gap AD is filled with a covering member (black or white) so as to be in contact with the dielectric multilayer film, light will leak from the dielectric multilayer film of the light emitting device 10 to the covering member. This is because the total reflection characteristic at the boundary between the outermost layer of the dielectric multilayer film and air is lost. Therefore, the arrangement of the plurality of light emitting devices 10 on the submount 61 can be in series, in parallel, or in a combination thereof, and any arrangement suitable for the lighting device can be adopted.

[0064] As described above in detail, it is possible to provide a light emitting module having a light emitting device that prevents leakage light and stray light and has high optical coupling to a light guide.

[0065] [Third embodiment] 12 is an exploded view schematically illustrating a light source assembly 70 according to a third embodiment of the present invention. The light source assembly 70 includes a first light emitting device 10A and a second light emitting device 10B, which are the light emitting devices according to the first embodiment, and a light guide 71 into which light emitted from the first light emitting device 10A and the second light emitting device 10B is incident.

[0066] (1) Light source assembly configuration More specifically, the light source assembly 70 has a light emitting module 74 including a circuit board 73 and a first light emitting device 10A and a second light emitting device 10B mounted on the circuit board 73. For example, the first light emitting device 10A emits white light, and the second light emitting device 10B emits orange light (amber).

[0067] The light guide 71 is supported and fixed by a support 72. A circuit board 73 has an internally threaded hole 73H, and is fixed to the circuit board 73 by a fixing screw 75. Alternatively, the light guide 71 and the circuit board 73 are fixed to a bracket 77 by the fixing screw 75. The gap between the light guide 71 and the circuit board 73 is adjusted and fixed by a hollow sleeve 76 through which the fixing screw 75 is passed.

[0068] The light guide 71 has a cylindrical shape and a flat light incident end surface 71E that is perpendicular to the central axis CL of the light guide 71. The light guide 71 is made of a resin such as polycarbonate. However, the light guide 71 is not limited to this, and may be made of glass or the like.

[0069] The first light emitting device 10A and the second light emitting device 10B are disposed symmetrically with respect to the central axis CL of the light guide 71. Furthermore, the light emitting portions EW of the first light emitting device 10A and the second light emitting device 10B are disposed perpendicular to the central axis CL, i.e., parallel to the light incident end surface 71E of the light guide 71.

[0070] Fig. 13 is a cross-sectional view schematically showing the cross section of the light source assembly 70 taken along line BB shown in Fig. 12. Note that the figure shows a half portion (the left half of Fig. 13) with respect to the central axis CL of the light guide 71.

[0071] The light output portion EW of the first light emitting device 10A and the light incident end surface 71E of the light guide 71 are separated by an air gap AG via a sleeve 76. Considering the refractive indices of air and the light guide 71 (polycarbonate), the critical angle (θc) is approximately 40°. Therefore, the angle of incidence (θside) of light incident on the side surface of the light guide 71 at or below the critical angle (θc) is 50° or more. In other words, the light incident on the light guide 71 through the air gap AG becomes guided light within the light guide 71.

[0072] However, there are unevennesses due to molding limits on the light incident end surface 71E of the light guide 71. Therefore, if the light emitted from the light emitting device contains stray light, particularly high-angle stray light, light leakage occurs from the side surface of the light guide 71.

[0073] According to the light emitting device of the present invention, stray light is suppressed, and therefore light leaking from the side surfaces of the light guide can be suppressed.

[0074] (2) Variations Fig. 14A is a perspective view schematically showing a light emitting module 74M in Modification 1 of the light source assembly 70 of the third embodiment. Fig. 14B is a cross-sectional view showing the cross section of the light emitting module 74M taken along line CC shown in Fig. 14A.

[0075] In the light source assembly 70 of the first modification, the light emitting module 74M is different from the light emitting module 74 of the third embodiment in that a frame body 78 that surrounds the light emitting device 10 of the first embodiment is provided.

[0076] The frame 78 is formed of a black material that absorbs the light emitted from the first light emitting device 10A and the second light emitting device 10B. For example, a silicone resin containing a filler such as titanium oxide particles or carbon black can be used, but the material is not limited to this.

[0077] Furthermore, the first light emitting device 10A and the second light emitting device 10B are mounted separated from each other by a gap, so that the light source assembly 70 can be configured without impairing the side light leakage suppression properties of the first light emitting device 10A and the second light emitting device 10B.

[0078] As described above in detail, the present disclosure can provide a light emitting device that prevents leakage light and stray light from the light emitting device and has high optical coupling to a light guide, and a light emitting module that includes the light emitting device. Also, a light source assembly in which the light guide and the light emitting device are assembled and stray light is suppressed can be provided.

[0079] As described above in detail, it is possible to provide a light source assembly that prevents leakage light and stray light and has high optical coupling with a light guide. [Explanation of symbols]

[0080] 10, 10A, 10B, 50: Light-emitting device 12: Adhesive layer 15:Aperture 20: Light emitting element 21: Light-emitting element 21A: Circuit board 21B: Light-emitting semiconductor layer 21E: Light extraction surface 21F: Element electrode surface 21K:Active layer 23A, 23B: element electrodes 25,35:Light shielding film 30: Optical conversion unit 31: Phosphor plate 31E: Light exit surface 31F: Light incidence surface 35A: Multilayer reflective film 35B: Third dielectric film 60: Light emitting module 61: Submount 61A: Base 61B: Standing section 70: Light source assembly 71: Light guide 71E: Light incidence end face 72: Supporting part 73: Circuit board 74, 74M: Light emitting module 76: Sleeve 78: Frame AD,AG: air gap EW: Light output section

Claims

1. a light emitting element having a light extraction surface and an element electrode surface facing the light extraction surface and having a pair of element driving electrodes provided thereon; a light conversion member having a light incident surface and a light exit surface facing the light incident surface, the light incident surface being adhered to the light extraction surface of the light emitting element by a light-transmitting adhesive; the light-emitting element is provided with a first light-shielding film that covers the light-emitting element except for the light extraction surface and an area where the pair of element driving electrodes are formed; the light conversion member is provided with a second light-shielding film that covers the light conversion member except for the light incident surface and an opening region that is a light exit portion of the light exit surface; Semiconductor light-emitting device.

2. 2. The semiconductor light emitting device according to claim 1, wherein the first light shielding film and the second light shielding film are dielectric multilayer films that reflect the light emitted by the light emitting element and the light emitted by the light converting member, respectively.

3. 3. The semiconductor light emitting device according to claim 2, wherein the thickness of the outermost layer of the first light shielding film is equal to or greater than one wavelength of light at the longest wavelength end of the light emitted by the light converting member.

4. The semiconductor light emitting device according to claim 1 , wherein the light converting member emits light of a chromaticity different from that of light emitted by the light emitting element from the light emitting portion of the light emitting surface.

5. 2. The semiconductor light emitting device according to claim 1, wherein the first light-shielding film and the second light-shielding film are different in at least one of material, film thickness, number of pairs, and total thickness.

6. The semiconductor light emitting device according to claim 1 , wherein the light emitting portion of the light emitting surface has any one of a circular, oval, square, rectangular, and polygonal shape.

7. the light-emitting element and the light conversion member have a rectangular parallelepiped shape, The cross sections of the light conversion member perpendicular to the light incident surface have the same size, 2. The semiconductor light emitting device according to claim 1, wherein said light emitting element and said light converting member are bonded together to form a single rectangular parallelepiped shape as a whole.

8. The semiconductor light emitting device according to claim 1 , wherein light having a Lambertian distribution is emitted from the opening region that is the light emitting portion.

9. a plurality of semiconductor light emitting devices according to any one of claims 1 to 8; a base having wiring electrodes and a frame having a light-absorbing standing portion standing on the base, the plurality of semiconductor light emitting devices are mounted on the wiring electrodes and spaced apart from one another by gaps.

10. The light-emitting module according to claim 9 , wherein the plurality of semiconductor light-emitting devices emit light of different chromaticities.

11. a circuit board on which a plurality of semiconductor light emitting devices according to any one of claims 1 to 8 are mounted and spaced apart by gaps; a light guide having a flat light incident end surface; a light guide support portion that supports the light guide; an adjustment and fixing portion that fixes the circuit board to the light guide support portion, separating the light incident end surface of the light guide and the light emitting portions of the plurality of semiconductor light emitting devices from each other by a gap.

12. The light source assembly according to claim 11 , wherein the circuit board has a light-absorbing frame surrounding the plurality of semiconductor light-emitting devices mounted thereon.

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