Package core assembly and method of manufacture

Abstract

To provide an improved semiconductor package with increased density, a printed circuit board (PCB) core assembly, and a method for forming them.SOLUTION: A method of structuring a substrate for a semiconductor core assembly that may be utilized to form a semiconductor package assembly, a PCB assembly, a PCB spacer assembly, a chip carrier assembly, an intermediate carrier assembly (e.g., for a graphics card), or the like, wherein a silicon substrate core is structured by direct laser patterning, one or more conductive interconnects are formed in the substrate core, and one or more redistribution layers are formed on a surface thereof. The silicon substrate core may then be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure relate generally to electronic packaging structures and methods of forming the same. More particularly, embodiments described herein relate to semiconductor packages and PCB assemblies and methods of forming the same. [Background technology]

[0002]

[0002] Due to the ever-increasing demand for miniaturized electronic devices and components, the demand for faster processing power with greater circuit density places corresponding demands on the materials, structures, and processes used in the manufacture of such integrated circuit chips. However, in addition to these trends toward increased integration and performance, there is a perpetual pursuit of reducing manufacturing costs.

[0003]

[0003] Traditionally, integrated circuit chips have been fabricated on organic package substrates bonded to circuit boards (e.g., printed circuit boards (PCBs)) due to the ease of forming features and connections in the organic package substrates and the relatively low package manufacturing costs associated with organic composite materials. However, as circuit density increases and electronic devices become smaller, the use of organic package substrates and traditional interconnect PCBs becomes impractical due to limitations in material structuring resolution and related performance requirements to maintain device scaling. More recently, 2.5D and 3D integrated circuits have been fabricated using passive silicon interposers as redistribution layers to compensate for some of the limitations associated with organic package substrates. The use of silicon interposers is driven by the high bandwidth density, low-power chip-to-chip communication, and heterogeneous integration possibilities required for advanced electronic assembly and packaging applications. However, the formation of features in silicon interposers, such as through-silicon vias (TSVs), remains difficult and costly. In particular, high costs are imposed by high aspect ratio silicon via etching, chemical mechanical planarization, and semiconductor back-end of line (BEOL) interconnects.

[0004] Therefore, what is needed in the art are improved semiconductor packages and PCB core assemblies with increased density and methods for forming the same. Summary of the Invention

[0005]

[0005] The present disclosure generally relates to electronic mounting structures and methods of forming the same.

[0006] In one embodiment, a semiconductor device assembly is provided. The semiconductor device assembly includes a silicon core structure having a first surface opposite a second surface and having a thickness of less than about 1000 μm. One or more conductive interconnects are formed through the silicon core structure and protrude from the first and second surfaces. The semiconductor device assembly further includes a first redistribution layer formed on the first surface and a second redistribution layer formed on the second surface. The first redistribution layer and the second redistribution layer each have one or more conductive contacts formed thereon.

[0007] In one embodiment, a semiconductor device assembly is provided. The semiconductor device assembly includes a silicon core structure, a passivating layer, and a dielectric layer. The silicon core structure has a thickness of less than about 1000 μm. The passivating layer surrounds the silicon core structure and includes thermal oxide. The dielectric layer is formed on the passivating layer and includes an epoxy resin having silica particles disposed therein.

[0008] In one embodiment, a semiconductor device assembly is provided. The semiconductor device includes a silicon core structure, a passivating layer surrounding the silicon structure and including thermal oxide, a dielectric layer surrounding the passivating layer and formed of an epoxy resin, and a redistribution layer formed on the dielectric layer. The redistribution layer further includes an adhesion layer formed on the dielectric layer and formed of molybdenum, a copper seed layer formed on the adhesion layer, and a copper layer formed on the copper seed layer.

[0009]

[0009] Embodiments of the present disclosure may further provide a semiconductor device assembly including a silicon core structure having a first side opposite a second side, a first redistribution layer formed on the first side, and a second redistribution layer formed on the second side. A dielectric layer including a flowable epoxy resin material may be formed on the first side and the second side and may have a thickness between about 5 μm and about 50 μm. The silicon core structure may have a thickness of less than 1500 μm, a metal cladding layer formed on the first side and the second side, and one or more conductive interconnects formed in one or more through-assembly vias and having surfaces exposed on the first side and the second side. Each of the one or more through-assembly vias is circumferentially defined by the dielectric layer. The first redistribution layer and the second redistribution layer each have one or more conductive contacts formed thereon. The metal cladding layer circumferentially surrounds each of the one or more conductive interconnects. The metal cladding layer may have a thickness of between about 100 nm and about 5 μm on substantially all exposed surfaces of the silicon core. The metal cladding layer may be further conductively coupled to ground by one or more conductive cladding connections disposed within the first redistribution layer and the second redistribution layer.

[0010]

[0010] Embodiments of the present disclosure may further provide a semiconductor device assembly including a silicon core structure having a thickness of less than 1500 μm, a metal or oxide layer formed on at least two surfaces thereof, and a dielectric layer including an epoxy resin with silica particles formed on the metal or oxide layer. One or more vias circumferentially defined by the dielectric layer and having a diameter of less than about 1500 μm are disposed through the semiconductor device assembly and filled with copper. The dielectric layer circumferentially defining the one or more vias may be further circumferentially surrounded by a metal or oxide layer. A redistribution layer having one or more redistribution connections may be formed on the dielectric layer. The redistribution connections and the copper-filled vias may together form an inductive coil. The silicon core structure may further include one or more pockets containing silicon capacitors therein. A heat exchanger may further be disposed on the dielectric layer or coupled to the metal or oxide layer.

[0011]

[0011] Embodiments of the present disclosure may further provide a semiconductor device assembly including: a first side, the first side opposite a second side; a silicon core structure having a thickness of less than 1500 μm; a nickel cladding layer formed on the first side and the second side; and a dielectric layer including an epoxy resin and surrounding the nickel cladding layer. An array of vias is disposed through the silicon core structure and filled with a conductive material, each via in the array of vias being defined by the dielectric layer. A redistribution layer is formed on the dielectric layer and includes a molybdenum-containing adhesion layer formed on the dielectric layer, a copper seed layer formed on the adhesion layer, and a copper layer formed on the copper seed layer.

[0012]

[0012] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, which may admit of other equally effective embodiments. [Brief explanation of the drawings]

[0013] [Figure 1A]

[0013] FIG. 1 schematically illustrates a cross-sectional view of a semiconductor core assembly according to an embodiment described herein. [Figure 1B]

[0014] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies according to embodiments described herein. [Figure 1C]

[0015] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies according to embodiments described herein. [Figure 2]

[0016] FIG. 1C is a flow diagram illustrating a process for forming the semiconductor core assembly of FIGS. 1A and 1B according to embodiments described herein. [Figure 3]

[0017] FIG. 1 is a flow diagram illustrating a process for structuring a substrate for a semiconductor core assembly according to embodiments described herein. [Figure 4]

[0018] 5A-5D schematically show cross-sectional views of a substrate at various stages of the process shown in FIG. 3 according to embodiments described herein. [Figure 5]

[0019] FIG. 1 is a flow diagram illustrating a process for forming an insulating layer on a core structure for a semiconductor core assembly according to embodiments described herein. [Figure 6]

[0020] 6A-6D schematically illustrate cross-sectional views of a core structure at various stages of the process shown in FIG. 5 according to embodiments described herein. [Figure 7]

[0021] FIG. 1 is a flow diagram illustrating a process for forming an insulating film on a core structure for a semiconductor core assembly according to embodiments described herein. [Figure 8]

[0022] 8A-8D schematically illustrate cross-sectional views of a core structure at various stages of the process shown in FIG. 7 according to embodiments described herein. [Figure 9]

[0023] FIG. 1 is a flow diagram illustrating a process for forming interconnects in a semiconductor core assembly according to embodiments described herein. [Figure 10]

[0024] 10A-H schematically illustrate cross-sectional views of a semiconductor core assembly at various stages of the process shown in FIG. 9 according to embodiments described herein. [Figure 11]

[0025] FIG. 1 is a flow diagram illustrating a process for forming a redistribution layer on a semiconductor core assembly according to embodiments described herein. [Figure 12]

[0026] 1A-1D schematically illustrate cross-sectional views of a semiconductor core assembly at various stages of the process shown in FIG. 11 according to embodiments described herein. [Figure 13A]

[0027] 1A and 1B illustrate schematic cross-sectional views of chip carrier structures including semiconductor core assemblies according to embodiments described herein. [Figure 13B]

[0028] 1A and 1B illustrate schematic cross-sectional views of PCB structures including semiconductor core assemblies according to embodiments described herein. [Figure 13C]

[0029] 1A and 1B illustrate schematic cross-sectional views of PCB structures including semiconductor core assemblies according to embodiments described herein. [Figure 14A]

[0030] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies integrated with one or more passive devices according to embodiments described herein. [Figure 14B]

[0031] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies integrated with one or more passive devices according to embodiments described herein. [Figure 14C]

[0032] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies integrated with one or more passive devices according to embodiments described herein. [Figure 15A]

[0033] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies integrated with one or more passive devices according to embodiments described herein. [Figure 15B]

[0034] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies integrated with one or more passive devices according to embodiments described herein. [Figure 15C]

[0035] 1A and 1B illustrate schematic cross-sectional views of exemplary passive devices integrated into semiconductor core assemblies according to embodiments described herein. [Figure 15D]

[0036] 15D schematically illustrates a cross-sectional view of the passive device-integrated semiconductor core assembly of FIG. 15C according to embodiments described herein. [Figure 16]

[0037] 1A and 1B illustrate schematic cross-sectional views of semiconductor core assemblies with integrated bridge devices according to embodiments described herein. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0038] For ease of understanding, identical reference numerals have been used, where possible, to designate identical elements common to the figures, and it is envisioned that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0015]

[0039] The present disclosure relates to semiconductor core assemblies and methods for forming the same. The semiconductor core assemblies described herein can be used to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnects are formed in the substrate core, and one or more redistribution layers are formed on its surface. The silicon substrate core can then be used as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, and the like.

[0016]

[0040] The methods and apparatus disclosed herein involve novel thin-form-factor semiconductor core structures intended to replace more conventional semiconductor package, PCB, and chip carrier structures that utilize fiberglass-filled epoxy frames. Generally, the scalability of current semiconductor packages, PCBs, spacers, and chip carriers is limited by the lack of rigidity and planarity of the materials typically used to form these various structures (e.g., epoxy molding compound, FR-4 and FR-5 grade woven fiberglass fabric with epoxy resin binder, etc.). The inherent properties of these materials make it difficult to pattern and utilize fine (e.g., micron-sized) features formed therein. Furthermore, as a result of the properties (e.g., dielectric properties) of currently utilized materials, a coefficient of thermal expansion (CTE) mismatch can occur between the fiberglass frame, board, molding compound, and any chips positioned adjacent to them. Therefore, current package, PCB, spacer, and carrier structures require larger solder bumps with greater spacing to mitigate any warpage effects caused by the CTE mismatch. Thus, conventional semiconductor packages, PCBs, spacers, and carrier frames are characterized by low overall structure electrical bandwidth, resulting in reduced overall power efficiency. The methods and apparatus disclosed herein provide a semiconductor core structure that overcomes many of the drawbacks associated with the conventional semiconductor package, PCB, spacer, and carrier structures described above.

[0017]

[0041] 1A-1C illustrate cross-sectional views of a thin form factor semiconductor core assembly 100 according to some embodiments. The semiconductor core assembly 100 may be utilized for structural support and electrical interconnection of a semiconductor package mounted thereon. In a further example, the semiconductor core assembly 100 may be utilized as a carrier structure for a surface-mounted device such as a chip or graphics card. The semiconductor core assembly 100 generally includes a core structure 102, an optional passivating layer 104 (shown in FIGS. 1A and 1B) or a metal cladding layer 114 (shown in FIG. 1C), and an insulating layer 118.

[0018]

[0042] In one embodiment, the core structure 102 includes a patterned (e.g., structured) substrate formed of any suitable substrate material. For example, the core structure 102 may be made of a III-V compound semiconductor material, silicon (e.g., having a resistivity between about 1 ohm-comb and about 10 ohm-comb or a conductivity of about 100 W / mK), crystalline silicon (e.g., Si <100> or Si <111> ), silicon oxide, silicon germanium, doped or undoped silicon, undoped high-resistivity silicon (e.g., float-zone silicon having a lower dissolved oxygen content and a resistivity between about 5000 ohm-comb and about 10000 ohm-comb), doped or undoped polysilicon, silicon nitride, silicon carbide (e.g., having a conductivity of about 500 W / mK), quartz, glass (e.g., borosilicate glass), sapphire, alumina, and / or a ceramic material. In one embodiment, the core structure 102 comprises a monocrystalline p-type or n-type silicon substrate. In one embodiment, the core structure 102 comprises a polycrystalline p-type or n-type silicon substrate. In another embodiment, the core structure 102 comprises a p-type or n-type silicon solar substrate. In general, the substrates utilized to form the core structure 102 can have a polygonal or circular shape. For example, the core structure 102 may comprise a substantially square silicon substrate having lateral dimensions between about 120 mm and about 180 mm, e.g., about 150 mm, or between about 156 mm and about 166 mm, with or without chamfered edges. In another example, the core structure 102 may comprise a circular silicon-containing wafer having a diameter between about 20 mm and about 700 mm, such as between about 100 mm and about 500 mm (e.g., about 200 mm or about 300 mm).

[0019]

[0043] The core structure 102 has a thickness T1 between about 50 μm and about 1500 μm (such as a thickness T1 between about 90 μm and about 780 μm). For example, the core structure 102 has a thickness T1 between about 100 μm and about 300 μm (such as a thickness T1 between about 110 μm and about 200 μm). In another example, the core structure 102 has a thickness T1 between about 70 μm and about 150 μm (such as a thickness T1 between about 100 μm and about 130 μm). In another example, the core structure 102 has a thickness T1 between about 700 μm and about 800 μm (such as a thickness T1 between about 725 μm and about 775 μm).

[0020]

[0044] The core structure 102 further includes one or more holes or core vias 103 (hereinafter referred to as "core vias") formed therein to allow conductive electrical interconnects to be routed through the core structure 102. Generally, the one or more core vias 103 are substantially cylindrical in shape. However, other suitable configurations for the core vias 103 are also contemplated. The core vias 103 may be formed as single, isolated core vias 103 through the core structure 102, or in one or more groupings or arrays. In one embodiment, the minimum pitch P1 between each core via 103 is less than about 1000 μm (e.g., between about 25 μm and about 200 μm). For example, the pitch P1 is between about 40 μm and about 150 μm (e.g., between about 100 μm and about 140 μm (e.g., about 120 μm)). In one embodiment, one or more core vias 103 have a diameter V1 of less than about 500 μm (such as a diameter V1 of less than about 250 μm). For example, core vias 103 have a diameter V1 of between about 25 μm and about 100 μm (such as a diameter V1 of between about 30 μm and about 60 μm). In one embodiment, core vias 103 have a diameter V1 of about 40 μm.

[0021]

[0045] 1A and 1B may be formed on one or more surfaces of the core structure 102, including the first surface 106, the second surface 108, and one or more sidewalls of the core via 103. In one embodiment, the passivating layer 104 is formed on substantially all outer surfaces of the core structure 102 such that the passivating layer 104 substantially surrounds the core structure 102. Thus, the passivating layer 104 provides a protective outer barrier for the core structure 102 against corrosion and other forms of damage. In one embodiment, the passivating layer 104 is formed from an oxide film or layer, such as a thermal oxide layer. In some examples, the passivating layer 104 has a thickness between about 100 nm and about 3 μm (e.g., a thickness between about 200 nm and about 2.5 μm). In one example, passivating layer 104 has a thickness between about 300 nm and about 2 μm, such as a thickness of about 1.5 μm.

[0022]

[0046] 1C , instead of the passivating layer 104, the core structure 102 includes a metal cladding layer 114 formed on one or more surfaces, including the first surface 106, the second surface 108, and one or more sidewalls of the core via 103. In one embodiment, the metal cladding layer 114 is formed on substantially all outer surfaces of the core structure 102 such that the metal cladding layer 114 substantially surrounds the core structure 102. The metal cladding layer 114 is disposed on the substrate 302 to act as a reference layer (e.g., a ground layer or a voltage supply layer) and to protect subsequently formed connections from electromagnetic interference and shield semiconductor signals from the semiconductor material (Si) used to form the core structure 102. In one embodiment, the metal cladding layer 114 comprises a conductive metal layer including nickel, aluminum, gold, cobalt, silver, palladium, tin, or the like. In one embodiment, the metal clad layer 114 comprises a metal layer comprising a pure metal or alloy including nickel, aluminum, gold, cobalt, silver, palladium, tin, etc. The metal clad layer 114 generally has a thickness between about 50 nm and about 10 μm (such as between about 100 nm and about 5 μm).

[0023]

[0047] The insulating layer 118 may be formed on one or more surfaces of the core structure 102, the passivating layer 104, or the metal cladding layer 114 and may substantially encase the passivating layer 104, the metal cladding layer 114, and / or the core structure 102. Thus, the insulating layer 118 may extend into the core via 103 and cover the passivating layer 104 or the metal cladding layer 114 formed on its sidewalls, or may directly cover the core structure 102. Thus, a diameter V2 is defined, as depicted in FIG. 1A . In one embodiment, the insulating layer 118 has a thickness T2 from the outer surface of the core structure 102, the passivating layer 104, or the metal cladding layer 114 to the adjacent outer surface of the insulating layer 118 (e.g., major faces 105, 107) that is less than about 50 μm (e.g., a thickness T2 of less than about 20 μm). For example, the insulating layer 118 has a thickness T2 between about 5 μm and about 10 μm.

[0024]

[0048] In one embodiment, the insulating layer 118 is formed from a polymer-based dielectric material. For example, the insulating layer 118 is formed from a flowable build-up material. Therefore, although referred to hereinafter as an "insulating layer," the insulating layer 118 may also be referred to as a dielectric layer. In a further embodiment, the insulating layer 118 is formed from an epoxy resin material with a ceramic filler, such as silica (SiO2) particles. Other examples of ceramic fillers that may be utilized to form the insulating layer 118 are aluminum nitride (AlN), aluminum oxide (Al2O3), silicon carbide (SiC), silicon nitride (Si3N4), Sr2Ce2Ti5O, and the like. 16 , zirconium silicate (ZrSiO4), wollastonite (CaSiO3), beryllium oxide (BeO), cerium dioxide (CeO2), boron nitride (BN), calcium copper titanium oxide (CaCu3Ti4O 12), magnesium oxide (MgO), titanium dioxide (TiO), zinc oxide (ZnO), etc. In some examples, the ceramic filler utilized to form the insulating layer 118 has particles ranging in size between about 40 nm and about 1.5 μm (between about 80 nm and about 1 μm). For example, the ceramic filler has particles ranging in size between about 200 nm and about 800 nm (such as between about 300 nm and about 600 nm). In some embodiments, the ceramic filler includes particles having a size less than about 10% of the width or diameter of an adjacent core via 103 in the core structure 102 (such as a size less than about 5% of the width or diameter of the core via 103).

[0025]

[0049] One or more through-assembly holes or vias 113 (hereinafter referred to as "through-assembly vias") are formed through the insulating layer 118, which extends into the core via 103. For example, the through-assembly via 113 may be formed centrally within the core via 103 with the insulating layer 118 disposed therein. The insulating layer 118 thus forms one or more sidewalls of the through-assembly via 113, where the through-assembly via 113 has a diameter V2 that is smaller than the diameter V1 of the core via 103. In one embodiment, the through-assembly via 113 has a diameter V2 that is less than about 100 μm (e.g., less than about 75 μm). For example, the through-assembly via 113 has a diameter V2 that is less than about 50 μm (e.g., less than about 35 μm). In one embodiment, the through-assembly vias 113 have a diameter between about 25 μm and about 50 μm (such as a diameter between about 35 μm and about 40 μm).

[0026]

[0050] The through-assembly vias 113 provide channels through which one or more electrical interconnects 144 are formed within the semiconductor core assembly 100. In one embodiment, the electrical interconnects 144 are formed through the entire thickness of the semiconductor core assembly 100 (i.e., from the first major surface 105 to the second major surface 107 of the semiconductor core assembly 100). For example, the electrical interconnects 144 may have a longitudinal length corresponding to an overall thickness of the semiconductor core assembly 100 between about 50 μm and about 1000 μm, e.g., between about 200 μm and about 800 μm. In one example, the electrical interconnects 144 have a longitudinal length between about 400 μm and about 600 μm, e.g., a longitudinal length of about 500 μm. In another embodiment, the electrical interconnects 144 are formed only through a portion of the thickness of the semiconductor core assembly 100. 1A, the electrical interconnects 144 may protrude from major surfaces of the semiconductor core assembly 100, such as major surfaces 105, 107. The electrical interconnects 144 may be formed of any conductive material used in the fields of integrated circuits, circuit boards, chip carriers, etc. For example, the electrical interconnects 144 may be formed of a metallic material such as copper, aluminum, gold, nickel, silver, palladium, tin, etc.

[0027]

[0051] 1A, the electrical interconnects 144 have a lateral thickness equal to the diameter V2 of the through-assembly vias 113 in which they are formed. In another embodiment, as shown in FIG. 1B, the semiconductor core assembly 100 further includes an adhesion layer 140 and / or a seed layer 142 formed thereon for electrical insulation of the electrical interconnects 144. In one embodiment, the adhesion layer 140 is formed on a surface of the insulating layer 118 adjacent to the electrical interconnects 144, including the sidewalls of the through-assembly vias 113. Thus, as shown in FIG. 1B, the electrical interconnects 144 have a lateral thickness less than the diameter V2 of the through-assembly vias 113 in which they are formed. In yet another embodiment, the electrical interconnects 144 cover only the surface of the sidewalls of the through-assembly vias 113 and may therefore have a hollow core therethrough.

[0028]

[0052] Adhesion layer 140 may be formed from any suitable material, including, but not limited to, titanium, titanium nitride, tantalum, tantalum nitride, manganese, manganese oxide, molybdenum, cobalt oxide, cobalt nitride, etc. In one embodiment, adhesion layer 140 has a thickness B1 between about 10 nm and about 300 nm (such as between about 50 nm and about 150 nm). For example, adhesion layer 140 has a thickness B1 between about 75 nm and about 125 nm (such as about 100 nm).

[0029]

[0053] The optional seed layer 142 comprises a conductive material, including, but not limited to, copper, tungsten, aluminum, silver, gold, or any other suitable material or combination thereof. The seed layer 142 can be formed on the adhesion layer 140 or directly on the sidewalls of the through-assembly via 113 (e.g., on the insulating layer 118 without an adhesion layer in between). In one embodiment, the seed layer 142 has a thickness between about 50 nm and about 500 nm (e.g., between about 100 nm and about 300 nm). For example, the seed layer 142 has a thickness between about 150 nm and about 250 nm (e.g., about 200 nm).

[0030]

[0054] In some embodiments, such as those illustrated in FIG. 1B , the semiconductor core assembly 100 further includes one or more re-distribution layers 150 formed on the first side 175 and / or the second side 177 of the semiconductor core assembly 100 (the re-distribution layer 150 is illustrated as being formed on the second side 177 in FIG. 1B ). In one embodiment, the re-distribution layer 150 is formed from substantially the same material (e.g., a polymer-based dielectric material) as the insulating layer 118, and thus forms an extension thereof. In other embodiments, the re-distribution layer 150 is formed from a different material than the insulating layer 118. For example, the re-distribution layer 150 can be formed from a photosensitive polyimide material, a non-photosensitive polyimide, polybenzoxazole (PBO), benzocyclobutene (BCB), silicon dioxide, and / or silicon nitride. In another example, the re-distribution layer 150 is formed from a different inorganic dielectric material than the insulating layer 118. In one embodiment, the redistribution layer 150 has a thickness between about 5 μm and about 50 μm (such as between about 10 μm and about 40 μm). For example, the redistribution layer 150 has a thickness between about 20 μm and about 30 μm (such as about 25 μm).

[0031]

[0055] The redistribution layer 150 may include one or more redistribution connections 154 formed through redistribution vias 153 for relocating contact points of the electrical interconnects 144 to desired locations on a surface of the semiconductor core assembly 100, such as the major surfaces 105, 107. In some embodiments, the redistribution layer 150 may further include one or more external electrical connections (not shown) formed on the major surfaces 105, 107, such as a ball grid array or solder balls. Generally, the redistribution vias 153 and the redistribution connections 154 have substantially similar or smaller lateral dimensions than the through-assembly vias 113 and the electrical interconnects 144, respectively. For example, the redistribution vias 153 have a diameter V3 of between about 2 μm and about 50 μm (such as a diameter V3 of between about 10 μm and about 40 μm (such as a diameter V3 of between about 20 μm and about 30 μm)). Additionally, the redistribution layer 150 may include an adhesion layer 140 and a seed layer 142 formed on surfaces adjacent the redistribution connections 154 , including the sidewalls of the redistribution vias 153 .

[0032]

[0056] 1C , the metal cladding layer 114 is further coupled to at least one cladding connection 116 that forms a connection point on at least one side of the semiconductor core assembly 100. In one embodiment, the metal cladding layer 114 is coupled to two cladding connections 116 formed on opposite sides of the semiconductor core assembly 100. The cladding connections 116 may be connected to a common ground, such as exemplary ground 119, used by one or more semiconductor devices stacked with (e.g., above or below) the semiconductor core assembly 100. Alternatively, the cladding connections 116 are connected to a reference voltage, such as a power supply voltage. As shown, cladding connection 116 is formed in insulating layer 118 and connects metal cladding layer 114 to connection ends of cladding connection 116 located on or at a surface of semiconductor core assembly 100, such as major surfaces 107 and 105, so that metal cladding layer 114 can be connected to an external common ground voltage or reference voltage (shown in FIG. 1C as an exemplary connection to ground 119).

[0033]

[0057] The metal cladding layer 114 may be electrically connected to the external ground 119 via the cladding connection 116 and any other suitable coupling means. For example, the cladding connection 116 may be indirectly coupled to the external ground 119 by a solder bump on the opposite side of the semiconductor core assembly 100. In certain embodiments, the cladding connection 116 may first be routed through a separate electronic system or device before being coupled to the external ground 119. The use of a ground path between the metal cladding layer 114 and the external ground 119 reduces or eliminates interference between the interconnects 144 and / or redistribution connections 154, preventing shorting of integrated circuits coupled thereto and potentially damaging the semiconductor core assembly 100 and any systems or devices integrated or stacked therewith.

[0034]

[0058] Like the electrical interconnects 144 and the redistribution connections 154, the cladding connections 116 are formed of any suitable conductive material, including, but not limited to, nickel, copper, aluminum, gold, cobalt, silver, palladium, tin, etc. The cladding connections 116 are substantially similar to the through-assembly vias 113 or the redistribution vias 153, but are deposited or plated through cladding vias 123 that traverse only a portion of the semiconductor core assembly 100 (e.g., from its surface to the core structure 102). Thus, the cladding vias 123 may be formed through the insulating layer 118 directly above or below the core structure 102 having the metal cladding layer 114 formed thereon. Furthermore, like the electrical interconnects 144 and the redistribution connections 154, the cladding connections 116 may completely fill the cladding vias 123 or line the inner circumferential walls thereof, thus having a hollow core.

[0035]

[0059] In certain embodiments, cladding via 123 and cladding connection 116 have lateral dimensions (e.g., diameter and lateral thickness, respectively) substantially similar to diameter V2. In certain embodiments, adhesion layer 140 and seed layer 142 are formed within cladding via 123, such that cladding via 123 has a diameter substantially similar to diameter V2 and cladding connection 116 can have a lateral thickness less than diameter V2, such as a lateral thickness substantially similar to diameter V3. In certain embodiments, cladding via 123 has a diameter of approximately 5 μm.

[0036]

[0060] 2 shows a flow diagram of an exemplary method 200 of forming a semiconductor core assembly. Method 200 includes multiple steps 210, 220, 230, and 240. Each step is described in more detail with reference to FIGS. 3-12L. The method may include one or more additional steps performed before any of the defined steps, between two of the defined steps, or after all of the defined steps (unless the context precludes that possibility).

[0037]

[0061] Generally, method 200 includes structuring a substrate utilized as a core structure (e.g., a frame) in step 210, which will be described in further detail with reference to FIGS. 3 and 4A-4D. In step 220, an insulating layer is formed on the core structure 102, which will be described in further detail with reference to FIGS. 5, 6A-6I, 7, and 8A-8E. In step 230, one or more interconnects are formed through the core structure 102 and the insulating layer, which will be described in further detail with reference to FIGS. 9 and 10A-10H. In step 240, a redistribution layer is formed on the insulating layer to relocate the interconnect contacts to desired locations on the surface of the assembled core assembly, after which the core assembly is singulated. In some embodiments, one or more additional redistribution layers are formed in addition to the first redistribution layer, which will be described in further detail with reference to FIGS. 11 and 12A-12L.

[0038]

[0062] Figure 3 shows a flow diagram of an exemplary method 300 for structuring a substrate 400 to be utilized as a core structure. Figures 4A-4D schematically illustrate cross-sectional views of the substrate 400 at various stages of the substrate structuring process 300 depicted in Figure 3. Therefore, Figure 3 and Figures 4A-4D are discussed together herein for clarity.

[0039]

[0063] The method 300 begins with step 310 and corresponding Figure 4A. As described with reference to the core structure 102 above, the substrate 400 may be a III-V compound semiconductor material, silicon, crystalline silicon (e.g., Si <100> or Si <111> ), silicon oxide, silicon germanium, doped or undoped silicon, undoped high-resistivity silicon, doped or undoped polysilicon, silicon nitride, silicon carbide, quartz, glass materials (e.g., borosilicate glass), sapphire, alumina, and / or ceramic materials. In one embodiment, substrate 400 is a monocrystalline p-type or n-type silicon substrate. In one embodiment, substrate 400 is a polycrystalline p-type or n-type silicon substrate. In another embodiment, substrate 400 is a p-type or n-type silicon solar substrate. Substrate 400 may also have a polygonal or circular shape. For example, substrate 400 may comprise a substantially square silicon substrate having lateral dimensions between about 120 mm and about 180 mm, with or without chamfered edges. In another example, substrate 400 may comprise a circular silicon-containing wafer having a diameter between about 20 mm and about 700 mm (such as between about 100 mm and about 500 mm (e.g., about 200 mm or about 300 mm)). Unless otherwise noted, the embodiments and examples described herein are performed on a substrate having a thickness between about 50 μm and about 1500 μm (such as between about 90 μm and about 780 μm). For example, substrate 400 has a thickness between about 100 μm and about 300 μm (such as between about 110 μm and about 200 μm).

[0040]

[0064] Prior to step 310, the substrate 400 may be sliced ​​and separated from the bulk material by wire sawing, scribing and breaking, mechanically abrasive sawing, or laser cutting. Slicing typically introduces mechanical defects or deformations into the substrate surface, such as scratches, microcracking, chipping, and other mechanical defects. Therefore, the substrate 400 is exposed to a first damage removal process in step 310 to smooth and planarize its surface and remove mechanical defects in preparation for a subsequent structuring step. In some embodiments, the substrate 400 may be further thinned by adjusting the process parameters of the first damage removal process. For example, the thickness of the substrate 400 may decrease with increasing exposure to the first damage removal process.

[0041]

[0065] The first damage removal process in step 310 includes exposing the substrate 400 to a substrate polishing process and / or an etching process, followed by a rinsing and drying process. In some embodiments, step 310 includes a chemical mechanical polishing (CMP) process. In one embodiment, the etching process is a wet etching process, including a buffered etching process that is selective for removing desired materials (e.g., contaminants and other undesirable compounds). In another embodiment, the etching process is a wet etching process that utilizes an isotropic aqueous etching process. Any suitable wet etchant or combination of wet etchants can be used for the wet etching process. In one embodiment, the substrate 400 is immersed in an aqueous HF etching solution for etching. In another embodiment, the substrate 400 is immersed in an aqueous KOH etching solution for etching.

[0042]

[0066] In some embodiments, the etching solution is heated to a temperature between about 30° C. and about 100° C. (e.g., between about 40° C. and about 90° C.) during the etching process. For example, the etching solution is heated to a temperature of about 70° C. In yet other embodiments, the etching process in step 310 is a dry etching process. Examples of dry etching processes include plasma-based dry etching processes. The thickness of the substrate 400 is adjusted by controlling the exposure time of the substrate 400 to the etchant (e.g., the etching solution) utilized during the etching process. For example, the final thickness of the substrate 400 decreases as the exposure to the etchant increases. Alternatively, the substrate 400 may have a greater final thickness as the exposure to the etchant decreases.

[0043]

[0067] In step 320, the now planarized and substantially defect-free substrate 400 is patterned to form one or more core vias 403 therein (four core vias 403 are depicted in cross section of substrate 400 in FIG. 4B ). The core vias 403 are utilized to form direct-contact electrical interconnects through the substrate 400.

[0044]

[0068] Generally, the one or more core vias 403 may be formed by laser ablation (e.g., direct laser patterning). Any suitable laser ablation system may be utilized to form the one or more core vias 403. In some examples, the laser ablation system utilizes an infrared (IR) laser source. In some examples, the laser source is a picosecond ultraviolet (UV) laser. In other examples, the laser is a femtosecond UV laser. In yet other examples, the laser source is a femtosecond green laser. The laser source of the laser ablation system generates a continuous or pulsed laser beam for patterning the substrate 400. For example, the laser source may generate a pulsed laser beam having a frequency between 5 kHz and 500 kHz (such as between 10 kHz and about 200 kHz). In one example, the laser source is configured to deliver a pulsed laser beam with an output power of between about 10 Watts and about 100 Watts, at a wavelength of between about 200 nm and about 1200 nm, and with a pulse duration of between about 10 ns and about 5000 ns. The laser source is configured to form any desired pattern of features in the substrate 400, including the core via 403.

[0045]

[0069] In some embodiments, the substrate 400 is optionally bonded to a carrier plate (not shown) before being patterned. The optional carrier plate may provide mechanical support for the substrate 400 during its patterning and prevent breakage of the substrate 400. The carrier plate may be formed from any suitable chemically and thermally stable, rigid material, including, but not limited to, glass, ceramic, metal, etc. In some examples, the carrier plate has a thickness of between about 1 mm and about 10 mm (e.g., between about 2 mm and about 5 mm). In one embodiment, the carrier plate has a textured surface. In other embodiments, the carrier plate has a polished or smooth surface. The substrate 400 may be bonded to the carrier plate using any suitable temporary adhesive material, including, but not limited to, wax, glue, or similar adhesive materials.

[0046]

[0070] In some embodiments, patterning substrate 400 can cause undesirable mechanical defects in the surface of substrate 400, including chipping, cracking, and / or warping. Therefore, after performing step 320 to form core via 403 in substrate 400, substrate 400 is exposed to a second damage removal and cleaning process in step 330, substantially similar to the first damage removal process in step 310, to smooth the surface of substrate 400 and remove unwanted debris. As described above, the second damage removal process involves exposing substrate 400 to a wet or dry etching process, followed by rinsing and drying. The etching process proceeds for a predetermined duration to smooth the surface of substrate 400, particularly the surface exposed to the laser patterning process. In another embodiment, the etching process is utilized to remove any undesirable debris remaining on substrate 400 from the patterning process.

[0047]

[0071] After removing mechanical defects in substrate 400 in step 330, substrate 400 is subjected to a passivation or metallization process in step 340 and FIG. 4D to grow or deposit a passivating layer, such as oxide layer 404, or a metal layer, such as metal cladding layer 414, on the desired surfaces (e.g., all surfaces of substrate 400). In one embodiment, the passivation process is a thermal oxidation process. The thermal oxidation process is performed at a temperature between about 800°C and about 1200°C (e.g., between about 850°C and about 1150°C). For example, the thermal oxidation process is performed at a temperature between about 900°C and about 1100°C (e.g., between about 950°C and about 1050°C). In one embodiment, the thermal oxidation process is a wet oxidation process utilizing water vapor as an oxidizing agent. In one embodiment, the thermal oxidation process is a dry oxidation process utilizing molecular oxygen as an oxidizing agent. It is contemplated that in step 340, substrate 400 may be subjected to any suitable passivation process to form oxide layer 404 or any other suitable passivating layer thereon. The resulting oxide layer 404 generally has a thickness between about 100 nm and about 3 μm (e.g., between about 200 nm and about 2.5 μm). For example, oxide layer 404 has a thickness between about 300 nm and about 2 μm (e.g., about 1.5 μm). Alternatively, the metallization process may be any suitable metal deposition process, including an electroless deposition process, an electroplating process, a chemical vapor deposition process, an evaporative deposition process, and / or an atomic layer deposition process. In one embodiment, at least a portion of metal cladding layer 414 comprises a deposited nickel (Ni) layer formed by direct displacement or displacement plating on the surface of substrate 400 (e.g., an n-Si substrate or a p-Si substrate). For example, the substrate 400 is exposed to a nickel displacement plating bath having a composition including 0.5 M NiSO and NHOH for between about 2 and about 4 minutes at a temperature between about 60° C. and about 95° C. and a pH of about 11. Exposure of the silicon substrate 400 to a nickel ion-loaded aqueous electrolyte in the absence of a reducing agent causes a localized oxidation / reduction reaction at the surface of the substrate 400, thus resulting in the plating of metallic nickel thereon.Nickel displacement plating thus enables the selective formation of a thin, pure nickel layer on the silicon material of substrate 400 using a stable solution. Furthermore, the process is self-limiting; therefore, the reaction stops once all surfaces of substrate 400 are plated (e.g., there is no remaining silicon on which nickel can form). In certain embodiments, nickel metal clad layer 414 may be used as a seed layer for plating additional metal layers, such as nickel or copper, via electroless and / or electrolytic plating methods. In further embodiments, prior to the nickel displacement plating bath, substrate 400 is exposed to an SC-1 pre-clean solution and an HF oxide etchant to promote adhesion of nickel metal clad layer 414.

[0048]

[0072] Once passivated or metallized, the substrate 400 is ready to be utilized as a core structure 402 for the formation of a core assembly, such as semiconductor core assembly 100. Figures 5 and 7 illustrate flow diagrams of exemplary methods 500 and 700, respectively, for forming an insulating layer 618 on the core structure 402. Figures 6A-6I generally illustrate cross-sectional views of the core structure 402 at different stages of the method 500 shown in Figure 5, and Figures 8A-8E generally illustrate cross-sectional views of the core structure 402 at different stages of the method 700 shown in Figure 7. For clarity, Figures 5 and 6A-6I are discussed collectively herein, and Figures 7 and 8A-8E are discussed collectively herein.

[0049]

[0073] Generally, the method 500 begins at step 502 and FIG. 6A , where the first surface 406 of the core structure 402 on the first side 475, having the core via 403 formed therein and the oxide layer 404 formed thereon, is disposed on and adhered to a first insulating film 616a. In one embodiment, the first insulating film 616a includes one or more layers formed of a polymer-based dielectric material. For example, the first insulating film 616a includes one or more layers formed from a flowable build-up material. In one embodiment, the first insulating film 616a includes a flowable epoxy resin layer 618a. Generally, the epoxy resin layer 618a has a thickness of less than about 60 μm (e.g., between about 5 μm and about 50 μm). For example, the epoxy resin layer 618a has a thickness of between about 10 μm and about 25 μm.

[0050]

[0074] The epoxy resin layer 618a may be formed from a ceramic-filled epoxy resin, such as an epoxy resin filled with (e.g., containing) silica (SiO2) particles. Other examples of ceramic fillers that may be used to form the epoxy resin layer 618a and other layers of the insulating film 616a include aluminum nitride (AlN), aluminum oxide (Al2O3), silicon carbide (SiC), silicon nitride (Si3N4), Sr2Ce2Ti5O, and the like. 16 , zirconium silicate (ZrSiO4), wollastonite (CaSiO3), beryllium oxide (BeO), cerium dioxide (CeO2), boron nitride (BN), calcium copper titanium oxide (CaCu3Ti4O 12 ), magnesium oxide (MgO), titanium dioxide (TiO), zinc oxide (ZnO), etc. In some examples, the ceramic filler utilized to form the epoxy resin layer 618a has particles ranging in size between about 40 nm and about 1.5 μm (between about 80 nm and about 1 μm). For example, the ceramic filler utilized to form the epoxy resin layer 618a has particles ranging in size between about 200 nm and about 800 nm (such as between about 300 nm and about 600 nm).

[0051]

[0075] In some embodiments, the first insulating film 616a further includes one or more protective layers. For example, the first insulating film 616a includes a polyethylene terephthalate (PET) protective layer 622a, such as a biaxial PET protective layer 622a. However, any suitable number and combination of layers and materials is contemplated for the first insulating film 616a. In some embodiments, the entire insulating film 616a has a thickness of less than about 120 μm (e.g., a thickness of less than about 90 μm).

[0052]

[0076] In some embodiments, after attaching the core structure 402 to the first insulating film 616a, the core structure 402 may then be placed on a carrier 624 adjacent its first side 475 for additional mechanical stabilization during subsequent processing operations. Generally, the carrier 624 is formed from any suitable mechanically and thermally stable material capable of withstanding temperatures in excess of 100°C. For example, in one embodiment, the carrier 624 comprises polytetrafluoroethylene (PTFE). In another example, the carrier 624 is formed from polyethylene terephthalate (PET).

[0053]

[0077] In step 504 and FIG. 6B , a first protective film 660 is applied to the second surface 408 of the second side 477 of the core structure 402. The protective film 660 is bonded to the core structure 402 on the second side 477, opposite the first insulating film 616a, and covers the core via 403. In one embodiment, the protective film 660 is formed of a material similar to the protective layer 622a. For example, the protective film 660 is formed of PET, such as biaxial PET. However, the protective film 660 can be formed of any suitable protective material. In some embodiments, the protective film 660 has a thickness between about 50 μm and about 150 μm.

[0054]

[0078] The core structure 402, now attached to the insulating film 616a on a first side 475 and to the protective film 660 on a second side 477, is subjected to a first lamination process in step 506. During the lamination process, the core structure 402 is exposed to high temperatures, causing the epoxy resin layer 618a of the insulating film 616a to soften and flow into open voids or spaces (such as into the core via 403) between the insulating film 616a and the protective film 660. Thus, the core via 403 becomes at least partially filled (e.g., occupied) with the insulating material of the epoxy resin layer 618a, as shown in FIG. 6C . The core structure 402 also becomes partially surrounded by the insulating material of the epoxy resin layer 618a.

[0055]

[0079] In one embodiment, the lamination process is a vacuum lamination process that can be performed in an autoclave or other suitable device. In one embodiment, the lamination process is performed using a hot press process. In one embodiment, the lamination process is performed at a temperature between about 80°C and about 140°C and for a time period between about 1 minute and about 30 minutes. In some embodiments, the lamination process includes applying a pressure between about 1 psig and about 150 psig to the core structure 402 and the insulating film 616a at a temperature between about 80°C and about 140°C for a time period between about 1 minute and about 30 minutes. For example, the lamination process is performed by applying a pressure between about 10 psig and about 100 psig and a temperature between about 100°C and about 120°C for a time period between about 2 minutes and about 10 minutes. For example, the lamination process is performed at a temperature of about 110°C for about 5 minutes.

[0056]

[0080] In step 508, the protective film 660 is removed, and the core structure 402, now having the laminated insulating material of the epoxy resin layer 618a at least partially surrounding the core structure 402 and partially filling the core vias 403, is placed on the second protective film 662. As depicted in FIG. 6D , the second protective film 662 is bonded to the core structure 402 adjacent the first side 475, with the second protective film 662 positioned against (e.g., adjacent to) the protective layer 622a of the insulating film 616a. In some embodiments, the core structure 402 now bonded to the protective film 662 can optionally be placed on a carrier 624 for additional mechanical support of the first side 475. In some embodiments, the protective film 662 is placed on the carrier 624 before bonding the protective film 662 to the core structure 402. Generally, the protective film 662 is substantially similar in composition to the protective film 660. For example, the protective film 662 may be formed from PET, such as biaxial PET. However, the protective film 662 may be formed from any suitable protective material. In some embodiments, the protective film 662 has a thickness between about 50 μm and about 150 μm.

[0057]

[0081] Upon bonding the core structure 402 to the second protective film 662, a second insulating film 616b, substantially similar to the first insulating film 616a, is deposited on the second side 477 in step 510 and FIG. 6E , thus replacing the protective film 660. In one embodiment, the second insulating film 616b is deposited on the second side 477 of the core structure 402 such that the epoxy resin layer 618b of the second insulating film 616b covers the core via 403. In one embodiment, the deposition of the second insulating film 616b on the core structure 402 may form one or more voids between the insulating film 616b and the previously deposited insulating material of the epoxy resin layer 618a, which partially surrounds the core structure 402 and partially fills the core via 403. The second insulating film 616b may include one or more layers formed of a polymer-based dielectric material similar to the insulating film 616a. 6E, the second insulating film 616b includes an epoxy resin layer 618b substantially similar to the epoxy resin layer 618a described above. The second insulating film 616b may further include a protective layer 622b formed of a material similar to the protective layer 622a, such as PET.

[0058]

[0082] In step 512, as shown in FIG. 6F, a third protective film 664 is deposited on the second insulating film 616b. Generally, the protective film 664 is substantially similar in composition to the protective films 660, 662. For example, the protective film 664 is formed of PET, such as biaxial PET. However, the protective film 664 may be formed of any suitable protective material. In some embodiments, the protective film 664 has a thickness between about 50 μm and about 150 μm.

[0059]

[0083] The core structure 402, now attached to the insulating film 616b and protective film 664 on the second side 477 and the protective film 662 and optional carrier 624 on the first side 475, is exposed to a second lamination process in step 514 and FIG. 6G. Similar to the lamination process in step 504, the core structure 402 is exposed to high temperatures, causing the epoxy resin layer 618b of the insulating film 616b to soften and flow into any open voids or volumes between the insulating film 616b and the already laminated insulating material of the epoxy resin layer 618a, thus integrating itself with the insulating material of the epoxy resin layer 618a. Thus, the core via 403 becomes completely filled (e.g., packed, sealed) with the insulating material of both epoxy resin layers 618a, 618b.

[0060]

[0084] In one embodiment, the second lamination process is a vacuum lamination process that can be performed in an autoclave or other suitable device. In one embodiment, the lamination process is performed using a hot press process. In one embodiment, the lamination process is performed at a temperature between about 80°C and about 140°C and for a period of between about 1 minute and about 30 minutes. In some embodiments, the lamination process includes applying a pressure of between about 1 psig and about 150 psig while a temperature of between about 80°C and about 140°C is applied to the core structure 402 and the insulating film 616a for a period of between about 1 minute and about 30 minutes. For example, the lamination process is performed by applying a pressure of between about 10 psig and about 100 psig and a temperature of between about 100°C and about 120°C for a period of between about 2 minutes and about 10 minutes. For example, the lamination process is performed at a temperature of about 110°C for about 5 minutes.

[0061]

[0085] After lamination, the core structure 402 is removed from the carrier 624 in step 516, and the protective films 662, 664 are removed to obtain the laminated intermediate core assembly 602. As shown in FIG. 6H, the intermediate core assembly 602 includes the core structure 402 having one or more core vias 403 formed therethrough and filled with the insulating dielectric material of the insulating films 616a, 616b. The insulating dielectric material of the epoxy resin layers 618a, 618b further accommodates the core structure 402 having the oxide layer 404 formed thereon, such that the insulating material covers at least two surfaces or sides (e.g., surfaces 406, 408) of the core structure 402. In some examples, the protective layers 622a, 622b are also removed from the intermediate core assembly 602 in step 516. Generally, the protective layers 622a and 622b, the carrier 624, and the protective membranes 662 and 664 are removed from the intermediate core assembly 602 by any suitable mechanical process, such as peeling.

[0062]

[0086] Once the protective layers 622a, 622b and protective films 662, 664 are removed, the intermediate core assembly 602 is subjected to a curing process to fully cure (i.e., harden by chemical reaction and cross-linking) the insulating dielectric material of the epoxy resin layers 618a, 618b, thereby forming the insulating layer 618. The insulating layer 618 substantially surrounds the core structure 402 and fills the core vias 403. For example, the insulating layer 618 contacts or encapsulates at least 107, 477 of the core structure 402 (including surfaces 406, 408).

[0063]

[0087] In one embodiment, the curing process is carried out at an elevated temperature to fully cure the intermediate core assembly 602. For example, the curing process may be carried out at a temperature between about 140° C. and about 220° C. for a period of between about 15 minutes and about 45 minutes (e.g., at a temperature between about 160° C. and about 200° C. for a period of between about 25 minutes and about 35 minutes). For example, the curing process is performed at a temperature of about 180° C. for about 30 minutes. In a further embodiment, the curing process in step 516 is performed at or near ambient (e.g., atmospheric) pressure conditions.

[0064]

[0088] After curing, one or more through-assembly vias 613 are drilled through the intermediate core assembly 602 in step 518 to form channels through the entire thickness of the intermediate core assembly 602 for subsequent interconnect formation. In some embodiments, the intermediate core assembly 602 may be placed on a carrier, such as carrier 624, for mechanical support during formation of the through-assembly vias 613. The through-assembly vias 613 are formed in the core structure 402 and then drilled through the core vias 403 that are subsequently filled with the insulating layer 618. Thus, the through-assembly vias 613 may be circumferentially surrounded by the insulating layer 618 filled within the core vias 403. By lining the walls of the core vias 403 with the ceramic-filled epoxy resin material of the insulating layer 618, capacitive coupling between the conductive silicon-based core structure 402 and the interconnects 1044 (described with reference to FIGS. 9 and 10A-10H) in the completed (e.g., final) semiconductor core assembly 1270 (described with reference to FIGS. 10G, 11, and 12K and 12L) is significantly reduced compared to other conventional interconnect structures that utilize conventional via insulating liners or films. Furthermore, the flowable nature of the epoxy resin material of the insulating layer 618 allows for more consistent and reliable encapsulation and insulation, thus enhancing electrical performance by minimizing leakage current in the completed semiconductor core assembly 1270.

[0065]

[0089] In one embodiment, the through-assembly via 613 has a diameter of less than about 100 μm (such as less than about 75 μm). For example, the through-assembly via 613 has a diameter of less than about 50 μm (such as less than about 35 μm). In some embodiments, the through-assembly via 613 has a diameter between about 25 μm and about 50 μm (such as a diameter between about 35 μm and about 40 μm). In one embodiment, the through-assembly via 613 is formed using any suitable mechanical process. For example, the through-assembly via 613 is formed using a mechanical drilling process. In one embodiment, the through-assembly via 613 is formed through the intermediate core assembly 602 by laser ablation. For example, the through-assembly via 613 is formed using an ultraviolet laser. In one embodiment, the laser source utilized for laser ablation has a frequency between about 5 kHz and about 500 kHz. In one embodiment, the laser source is configured to deliver a pulsed laser beam with a pulse energy between about 50 microjoules (μJ) and about 500 μJ and a pulse duration between about 10 ns and about 100 ns. Utilizing an epoxy resin material containing small ceramic filler particles further facilitates more precise and accurate laser patterning of small diameter vias, such as through-assembly via 613, as the small ceramic filler particles therein exhibit reduced laser light reflection, scattering, diffraction, and transmission of laser light away from the region where the via is formed during the laser ablation process.

[0066]

[0090] In some embodiments, the through-assembly via 613 is formed within (e.g., through) the core via 403 such that the remaining ceramic-filled epoxy resin material (e.g., dielectric insulating material) on the sidewalls of the core via 403 has an average thickness between about 1 μm and about 50 μm. For example, the remaining ceramic-filled epoxy resin material on the sidewalls of the core via 403 has an average thickness between about 5 μm and about 40 μm (between about 10 μm and about 30 μm). Thus, the resulting structure after the formation of the through-assembly via 613 can be described as a "via-in-via" (e.g., a via formed centrally within the dielectric material within the via of the core structure). In one embodiment, the via-in-via structure includes a dielectric sidewall passivation comprised of ceramic particle-filled epoxy material and disposed on a thin layer of thermal oxide formed on the sidewalls of the core via 403.

[0067]

[0091] In embodiments in which a metal cladding layer 114, 414 is formed on the core structure 102, one or more cladding vias 123 may also be formed in step 518 to provide a channel for the cladding connection 116 (shown in FIG. 1C ). As described above, the cladding vias 123 are formed in the insulating layer 118 above and / or below the core structure 102 to allow coupling of the metal cladding layer 114, 414 to the cladding connection 116 so that the metal cladding layer 114, 414 can be connected to an external common ground or reference voltage. In one embodiment, the cladding vias 123 have a diameter of less than about 100 μm (e.g., less than about 75 μm). For example, the cladding vias 123 have a diameter of less than about 50 μm (e.g., less than about 35 μm). In some embodiments, cladding via 123 has a diameter between about 5 μm and about 25 μm (such as a diameter between about 10 μm and about 20 μm).

[0068]

[0092] After the formation of the through-assembly vias 613 and / or the cladding vias 123 (shown in FIG. 1C ), the intermediate core assembly 602 is subjected to a desmear process. During the desmear process, any undesired residue and / or debris caused by laser ablation during the formation of the through-assembly vias 613 and / or the cladding vias 123 is removed from the intermediate core assembly 602. Thus, the desmear process cleans the vias for subsequent metallization. In one embodiment, the desmear process is a wet desmear process. Any suitable solvent, etchant, and / or combination thereof may be utilized for the wet desmear process. In one example, methanol may be utilized as the solvent and copper(II) chloride dihydrate (CuCl·H O) may be utilized as the etchant. Depending on the thickness of the residue, the exposure time of the intermediate core assembly 602 to the wet desmear process may be varied. In another embodiment, the desmear process is a dry desmear process. For example, the desmear process can be a plasma desmear process using an O2 / CF4 gas mixture. The plasma desmear process can include generating a plasma by applying a power of about 700 W and flowing O2:CF4 at a ratio of about 10:1 (e.g., 100:10 sccm) for a period of between about 60 and about 120 seconds. In a further embodiment, the desmear process is a combination of a wet process and a dry process.

[0069]

[0093] Following the desmear process at step 518, the intermediate core assembly 602 is ready for the formation of interconnect paths therein, as described below with reference to Figures 9 and 10A-10H.

[0070]

[0094] As mentioned above, Figures 5 and 6A-6I illustrate an exemplary method 500 for forming an intermediate core assembly 602. Figures 7 and 8A-8E illustrate an alternative method 700 that is substantially similar to method 500 but includes fewer steps. Method 700 generally includes five steps 710-750. However, steps 710, 740, and 750 of method 700 are substantially similar to steps 502, 516, and 518, respectively, of method 500. Accordingly, only steps 720, 730, and 740, shown in Figures 8B, 8C, and 8D, respectively, will be described herein for clarity.

[0071]

[0095] After securing the first insulating film 616a to the first surface 406 of the first side 475 of the core structure 402, the second insulating film 616b is bonded to the second surface 408 of the opposite side 477 in step 720 and FIG. 8B . In some embodiments, the second insulating film 616b is placed on the surface 408 of the core structure 402 such that the epoxy resin layer 618b of the second insulating film 616b covers all of the core vias 403. As depicted in FIG. 8B , the core vias 403 form one or more voids or gaps between the insulating films 616a and 616b. In some embodiments, a second carrier 625 is attached to the protective layer 622b of the second insulating film 616b for additional mechanical support during subsequent processing steps.

[0072]

[0096] 8C, core structure 402, now attached to insulating films 616a and 616b on its opposite sides, is subjected to a single lamination process. During the single lamination process, core structure 402 is exposed to elevated temperatures, causing epoxy resin layers 618a and 618b in both insulating films 616a, 616b to soften and flow into the open void or space formed by core via 403 between insulating films 616a and 616b. Core via 403 therefore becomes filled with the insulating material of epoxy resin layers 618a and 618b.

[0073]

[0097] Similar to the lamination process described with reference to FIGS. 5 and 6A-6I, the lamination process in step 730 can be a vacuum lamination process that can be performed in an autoclave or other suitable device. In another embodiment, the lamination process is performed using a hot press process. In one embodiment, the lamination process is performed at a temperature between about 80° C. and about 140° C. and for a period of between about 1 minute and about 30 minutes. In some embodiments, the lamination process includes applying a pressure between about 1 psig and about 150 psig while a temperature between about 80° C. and about 140° C. is applied to the core structure 402 and the insulating films 616a, 616b for a period of between about 1 minute and about 30 minutes. For example, the lamination process is performed at a pressure between about 10 psig and about 100 psig, a temperature between about 100° C. and about 120° C., and for a period of between about 2 minutes and 10 minutes. For example, the lamination process of step 730 is performed at about 110° C. for about 5 minutes.

[0074]

[0098] In step 740, one or more protective layers of insulating films 616a, 616b are removed from the core structure 402, resulting in the laminated intermediate core assembly 602. In one example, the protective layers 622a, 622b are removed from the core structure 402, thus disengaging the intermediate core assembly 602 from the first and second carriers 624, 625. Generally, the protective layers 622a, 622b and carriers 624, 625 are removed by any suitable mechanical process, such as peeling. As depicted in FIG. 8D , the intermediate core assembly 602 includes a core structure 402 having one or more core vias 403 formed therein and filled with insulating dielectric material of epoxy resin layers 618a, 618b. The insulating material further encases the core structure 402 such that the insulating material covers at least two surfaces or sides of the core structure 402, e.g., surfaces 406, 408.

[0075]

[0099] Once the protective layers 622a, 622b are removed, the intermediate core assembly 602 is subjected to a curing process that fully cures the insulating dielectric material of the epoxy resin layers 618a, 618b. Curing of the insulating material results in the formation of an insulating layer 618. Similar to step 516 depicted in Figure 8D and corresponding to Figure 6H, the insulating layer 618 substantially surrounds the core structure 402 and fills the core vias 403.

[0076]

[0100] In one embodiment, the curing process is performed at an elevated temperature to fully cure the intermediate core assembly 602. For example, the curing process is performed at a temperature between about 140° C. and about 220° C. for a period of between about 15 minutes and about 45 minutes (e.g., at a temperature between about 160° C. and about 200° C. for a period of between about 25 minutes and about 35 minutes). For example, the curing process is performed at a temperature of about 180° C. for about 30 minutes. In a further embodiment, the curing process in step 740 is performed at or near ambient (e.g., atmospheric) pressure conditions.

[0077]

[0101] After curing at step 740, method 700 is substantially similar to step 518 of method 500. Accordingly, one or more through-assembly vias 613 and / or cladding vias 123 (shown in FIG. 1C ) are drilled through the intermediate core assembly 602, after which the intermediate core assembly 602 is subjected to a desmear process. Once the desmear process is complete, the intermediate core assembly 602 is ready for the formation of interconnect paths therein, as described below.

[0078]

[0102] Figure 9 shows a flow diagram of an exemplary method 900 for forming an electrical interconnection through an intermediate core assembly 602. Figures 10A-10H schematically illustrate cross-sectional views of the intermediate core assembly 602 at different stages in the process of method 900 shown in Figure 9. Accordingly, Figure 9 and Figures 10A-10H are described together herein for clarity.

[0079]

[0103] In one embodiment, the electrical interconnects formed through the intermediate core assembly 602 are formed of copper. Thus, the method 900 generally begins at step 910 and FIG. 10A , where the intermediate core assembly 602, having the through-assembly vias 613 formed therein, has a barrier or adhesion layer 1040 and / or seed layer 1042 formed thereon. An enlarged partial view of the adhesion layer 1040 and seed layer 1042 formed on the intermediate core assembly 602 is shown in FIG. 10H for reference. The adhesion layer 1040 is formed on desired surfaces of the insulating layer 618, such as the major surfaces 1005, 1007 of the intermediate core assembly 602 and surfaces corresponding to the sidewalls of the through-assembly vias 613 and / or cladding vias 123, and may help promote adhesion and inhibit diffusion of the subsequently formed seed layer 1042, electrical interconnects 1044, and / or cladding connections 116 (shown in FIG. 1C ). Thus, in one embodiment, adhesive layer 1040 acts as an adhesive layer, and in another embodiment, adhesive layer 1040 acts as a barrier layer, however, in both embodiments, adhesive layer 1040 will be described hereinafter as an "adhesive layer."

[0080]

[0104] In one embodiment, adhesion layer 1040 is formed from titanium, titanium nitride, tantalum, tantalum nitride, manganese, manganese oxide, molybdenum, cobalt oxide, cobalt nitride, or any other suitable material or combination thereof. In one embodiment, adhesion layer 1040 has a thickness between about 10 nm and about 300 nm (such as between about 50 nm and about 150 nm). For example, adhesion layer 1040 has a thickness between about 75 nm and about 125 nm (such as about 100 nm). Adhesion layer 1040 is formed by any suitable deposition process, including, but not limited to, chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), etc.

[0081]

[0105] The seed layer 1042 may be formed on the adhesion layer 1040 or directly on the insulating layer 618 (e.g., without forming the adhesion layer 1040). In some embodiments, the seed layer 1042 is formed on all surfaces of the insulating layer 618, and the adhesion layer 1040 is formed only on desired surfaces or portions of the surface of the insulating layer 618. For example, the adhesion layer 1040 may be formed on the major surfaces 1005, 1007 but not on the sidewalls of the through-assembly vias 613 and / or cladding vias 123 (shown in FIG. 1C ), while the seed layer 1042 may be formed on the major surfaces 1005, 1007 as well as the sidewalls of the vias. The seed layer 1042 is formed from a conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable material or combination thereof. In one embodiment, the seed layer 1042 has a thickness between about 0.05 μm and about 0.5 μm (between about 0.1 μm and about 0.3 μm). For example, the seed layer 1042 has a thickness between about 0.15 μm and about 0.25 μm (such as about 0.2 μm). In one embodiment, the seed layer 1042 has a thickness between about 0.1 μm and about 1.5 μm. Like the adhesion layer 1040, the seed layer 1042 is formed by any suitable deposition process, such as CVD, PVD, PECVD, an ALD dry process, or a wet electroless plating process. In one embodiment, the copper seed layer 1042 may be formed on the molybdenum adhesion layer 1040 on the intermediate core assembly 602. The combination of the molybdenum adhesion and copper seed layers allows for improved adhesion with the surface of the insulating layer 618 and reduces undercutting of the conductive interconnect lines during the subsequent seed layer etching process in step 970.

[0082]

[0106] In steps 920 and 930, corresponding to Figures 10B and 10C, respectively, a spin-on / spray-on or dry resist film 1050, such as photoresist, is applied to both major surfaces 1005, 1007 of the intermediate core assembly 602 and then patterned. In one embodiment, the resist film 1050 is patterned via selective exposure to UV radiation. In one embodiment, an adhesion promoter (not shown) is applied to the intermediate core assembly 602 prior to the formation of the resist film 1050. The adhesion promoter improves adhesion of the resist film 1050 to the intermediate core assembly 602 by creating an interfacial bonding layer for the resist film 1050 and by removing moisture from the surface of the intermediate core assembly 602. In some embodiments, the adhesion promoter is formed from bis(trimethylsilyl)amine or hexamethyldisilazane (HMDS) and propylene glycol monomethyl ether acetate (PGMEA).

[0083]

[0107] In step 940, the intermediate core assembly 602 is exposed to a resist film developing process. As shown in FIG. 10D, developing the resist film 1050 results in exposure of the through-assembly vias 613 and / or cladding vias 123 (shown in FIG. 1C), which may have an adhesion layer 1040 and / or a seed layer 1042 formed thereon. In one embodiment, the film developing process is a wet process, such as a wet process that includes exposing the resist film 1050 to a solvent. In one embodiment, the film developing process is a wet etching process that utilizes an aqueous etching process. For example, the film developing process is a wet etching process that utilizes a buffered etching process that is selective to the desired material. Any suitable wet solvent or wet etchant combination may be used in the resist film developing process.

[0084]

[0108] In steps 950 and 960, corresponding to Figures 10E and 10F, respectively, electrical interconnects 1044 are formed through the exposed through-assembly vias 613, after which the resist film 1050 is removed. In embodiments in which the core structure 102 has a metal cladding layer 114, 414 formed thereon, cladding connections 116 (shown in Figure 1C) are also formed through the exposed cladding vias 123 (shown in Figure 1C) in step 950. The interconnects 1044 and / or cladding connections 116 are formed by any suitable method, including electroplating and electroless plating. In one embodiment, the resist film 1050 is removed via a wet process. 10E and 10F , the electrical interconnects 1044 may completely fill the through-assembly vias 613 (the cladding connections 116 also completely fill the cladding vias 123) and may protrude from the surfaces 1005, 1007 of the intermediate core assembly 602 upon removal of the resist film 1050. In some embodiments, the electrical interconnects 1044 and / or the cladding connections 116 may only line the sidewalls of the vias without completely filling them. In one embodiment, the electrical interconnects 1044 and / or the cladding connections 116 are formed of copper. In other embodiments, the electrical interconnects 1044 and / or the cladding connections 116 may be formed of any suitable conductive material, including, but not limited to, aluminum, gold, nickel, silver, palladium, tin, etc.

[0085]

[0109] In step 970 and FIG. 10G , the intermediate core assembly 602, with the electrical interconnects 1044 and / or cladding connections 116 formed thereon, is exposed to a seed layer etching process to remove exposed adhesion layer 1040 and seed layer 1042 on its outer surfaces (e.g., surfaces 1005, 1007). In some embodiments, the adhesion layer 1040 and / or seed layer 1042 formed between the interconnects and the sidewalls of the vias may remain after the seed layer etching process. In one embodiment, the seed layer etching is a wet etching process that includes rinsing and drying the intermediate core assembly 602. In one embodiment, the seed layer etching process is a buffered etching process selective to a desired material, such as copper, tungsten, aluminum, silver, or gold. In other embodiments, the etching process is an aqueous etching process. Any suitable wet etchant or combination of wet etchants may be used for the seed layer etching process.

[0086]

[0110] Following the seed layer etching process in step 970, one or more semiconductor core assemblies may be singulated from the intermediate core assembly 602 and utilized as fully functional semiconductor core assemblies 1270 (e.g., electronic mounting or packaging structures). For example, the one or more semiconductor core assemblies may be singulated and utilized as circuit board structures, chip carrier structures, integrated circuit packages, etc. Alternatively, the intermediate core assembly 602 may have one or more redistribution layers 1260 (shown in FIGS. 12J and 12K) formed thereon to reroute external contacts of the electrical interconnects 1044 to desired locations on the surface of the final semiconductor core assembly.

[0087]

[0111] Figure 11 shows a flow diagram of an exemplary method 1100 of forming a redistribution layer 1260 on an intermediate core assembly 602 (which has not yet been singulated into semiconductor core assemblies 1270). Figures 12A-12K schematically show cross-sectional views of the intermediate core assembly 602 at different stages of the method 1100 shown in Figure 11. Accordingly, Figure 11 and Figures 12A-12K are described together herein for clarity.

[0088]

[0112] Method 1100 is substantially similar to methods 500, 700, and 900 described above. Generally, method 1100 begins with step 1102 and FIG. 12A , where an insulating film 1216 is attached to intermediate core assembly 602 and then laminated. The insulating film 1216 is substantially similar to insulating films 616a and 616b. In one embodiment, as shown in FIG. 12A , the insulating film 1216 includes an epoxy resin layer 1218 and one or more protective layers. For example, the insulating film 1216 may include a protective layer 1222. Any suitable combination of layers and insulating materials is contemplated for the insulating film 1216. In some embodiments, an optional carrier 1224 is bonded to the insulating film 1216 for additional support. In some embodiments, a protective film (not shown) may be bonded to the insulating film 1216.

[0089]

[0113] Generally, the epoxy resin layer 1218 has a thickness of less than about 60 μm (such as between about 5 μm and about 50 μm). For example, the epoxy resin layer 1218 has a thickness of between about 10 μm and about 25 μm. In one embodiment, the epoxy resin layer 1218 and the PET protective layer 1222 have a combined thickness of less than about 120 μm (such as a thickness of less than about 90 μm). The insulating film 1216, specifically the epoxy resin layer 1218, adheres to a surface of the intermediate core assembly 602 having exposed electrical interconnects 1044, such as the major surface 1005.

[0090]

[0114] After depositing the insulating film 1216, the intermediate core assembly 602 is subjected to a lamination process substantially similar to that described with respect to steps 506, 514, and 730. The intermediate core assembly 602 is exposed to an elevated temperature to soften the epoxy resin layer 1218 of the insulating film 1216, which then bonds to the insulating layer 618. The epoxy resin layer 1218 thus merges with and forms an extension of the insulating layer 618, and therefore will be described hereinafter as a single insulating layer 618. The merger of the epoxy resin layer 1218 with the insulating layer 618 further results in an extended insulating layer 618 that encapsulates the previously exposed electrical interconnects 1044.

[0091]

[0115] 12B, the protective layer 1222 and carrier 1224 are removed from the intermediate core assembly 602 by mechanical means, and the intermediate core assembly 602 is exposed to a curing process to fully cure the newly expanded insulating layer 618. In one embodiment, the curing process is substantially similar to the curing process described with reference to steps 516 and 740. For example, the curing process is carried out at a temperature between about 140° C. and about 220° C. for a period of between about 15 minutes and about 45 minutes.

[0092]

[0116] The intermediate core assembly 602 is then selectively patterned by laser ablation in step 1106 and FIG. 12C . The laser ablation process in step 1106 forms one or more redistribution vias 1253 in the newly expanded insulating layer 618, exposing the desired electrical interconnects 1044 for contact redistribution. In one embodiment, the redistribution vias 1253 have a diameter substantially the same as or smaller than the diameter of the through-assembly vias 613. For example, the redistribution vias 1253 have a diameter between about 5 μm and about 600 μm, such as a diameter between about 10 μm and about 50 μm (e.g., between about 20 μm and about 30 μm). In one embodiment, the laser ablation process in step 1106 is performed using a CO laser. In one embodiment, the laser ablation process in step 1106 is performed using a UV laser. In another embodiment, the laser ablation process in step 1106 is performed using a green laser. In one example, the laser source can generate a pulsed laser beam having a frequency between about 100 kHz and about 1000 kHz. In one example, the laser source is configured to deliver a pulsed laser beam with a wavelength between about 100 nm and about 2000 nm, a pulse duration between about 10E-4 ns and about 10E-2 ns, and pulse energy between about 10 μJ and about 300 μJ.

[0093]

[0117] In embodiments in which a metal cladding layer 114, 414 is formed on the core structure 102 (shown in FIG. 1C ), the intermediate core assembly 602 may also be patterned in operation 1106 to form one or more cladding vias 123 through the extended insulating layer 618. Thus, for semiconductor core assemblies having one or more redistribution layers, instead of forming the cladding vias 123 along with the through-assembly vias 613 in step 518 or 750, the cladding vias 123 may be formed simultaneously with the redistribution vias 1253. However, in certain other embodiments, the cladding vias 123 may be patterned first in step 518 or 750, then metallized with the cladding connections 116 and extended or stretched through the extended insulating layer 618 in step 1106.

[0094]

[0118] In step 1108 and FIG. 12D , adhesion layer 1240 and / or seed layer 1242 are optionally formed on one or more surfaces of insulating layer 618. In one embodiment, adhesion layer 1240 and seed layer 1242 are substantially similar to adhesion layer 1040 and seed layer 1042, respectively. For example, adhesion layer 1240 is formed from titanium, titanium nitride, tantalum, tantalum nitride, manganese, manganese oxide, molybdenum, cobalt oxide, cobalt nitride, or any other suitable material or combination thereof. In one embodiment, adhesion layer 1240 has a thickness between about 10 nm and about 300 nm (e.g., between about 50 nm and about 150 nm). For example, adhesion layer 1240 has a thickness between about 75 nm and about 125 nm (e.g., about 100 nm). Adhesion layer 1240 may be formed by any suitable deposition process, including but not limited to CVD, PVD, PECVD, ALD, and the like.

[0095]

[0119] The seed layer 1242 is formed from a conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable material or combination thereof. In one embodiment, the seed layer 1242 has a thickness between about 0.05 μm and about 0.5 μm (such as between about 0.1 μm and about 0.3 μm). For example, the seed layer 1242 has a thickness between about 0.15 μm and about 0.25 μm (such as about 0.2 μm). Like the adhesion layer 1240, the seed layer 1242 can be formed by any suitable deposition process, such as CVD, PVD, PECVD, an ALD dry process, or a wet electroless plating process. In one embodiment, the molybdenum adhesion layer 1240 and the copper seed layer 1242 are formed on the intermediate core assembly 602 to reduce undercut formation during the subsequent seed layer etching process in step 1122.

[0096]

[0120] In steps 1110, 1112, and 1114, corresponding to Figures 12E, 12F, and 12G, respectively, a spin-on / spray-on or dry resist film 1250, such as photoresist, is applied onto the seeded surface of the intermediate core assembly 602, then patterned and developed. In one embodiment, an adhesion promoter (not shown) is applied to the intermediate core assembly 602 before depositing the resist film 1250. Exposing and developing the resist film 1250 opens the redistribution vias 1253, which in certain embodiments result in cladding vias 123. Thus, patterning of the resist film 1250 can be performed by selectively exposing portions of the resist film 1250 to UV radiation and then developing the resist film 1250 by a wet process, such as a wet etching process. In one embodiment, the resist film development process is a wet etching process that utilizes a buffered etching process selective to the desired material. In other embodiments, the resist film development process is a wet etching process that utilizes an aqueous etching process. Any suitable wet etchant or combination of wet etchants may be used in the resist film development process.

[0097]

[0121] In steps 1116 and 1118, corresponding to Figures 12H and 12I, respectively, redistribution connections 1244 are formed through the exposed redistribution vias 1253, and then the resist film 1250 is removed. In certain embodiments, cladding connections 116 are also formed through the exposed cladding vias 123 in operation 1116. In one embodiment, the resist film 1250 is removed via a wet process. As shown in Figures 12H and 12I, the redistribution connections 1244 fill the redistribution vias 1253 and protrude from the surface of the intermediate core assembly 602 upon removal of the resist film 1250. In one embodiment, the redistribution connections 1244 are formed of copper. In other embodiments, the redistribution connections 1244 are formed of any suitable conductive material, including, but not limited to, aluminum, gold, nickel, silver, palladium, tin, etc. Any suitable method may be utilized to form the redistribution connections 1244, including electroplating and electroless deposition.

[0098]

[0122] In step 1120 and FIG. 12J , the intermediate core assembly 602 with the redistribution connections 1244 formed thereon is exposed to a seed layer etching process substantially similar to that of step 970. In one embodiment, the seed layer etching is a wet etching process that includes rinsing and drying the intermediate core assembly 602. In one embodiment, the seed layer etching process is a wet etching process that utilizes a buffered etching process that is selective to the desired material of the seed layer 1242. In another embodiment, the etching process is a wet etching process that utilizes an aqueous etching process. Any suitable wet etchant or combination of wet etchants may be used for the seed layer etching process.

[0099]

[0123] Upon completion of the seed layer etching process in step 1120, one or more additional re-distribution layers 1260 may be formed on the intermediate core assembly 602 using the sequence described above and processed as described above. For example, one or more additional re-distribution layers 1260 may be formed on the first re-distribution layer 1260 and / or an opposite surface of the intermediate core assembly 602, such as major surface 1007. In one embodiment, the one or more additional re-distribution layers 1260 may be formed from a polymer-based dielectric material, such as a flowable build-up material, that is different from the material of the first re-distribution layer 1260 and / or the insulating layer 618. For example, in some embodiments, the insulating layer 618 is formed from a ceramic fiber-filled epoxy, while the first and / or any additional re-distribution layers 1260 are formed from polyimide, BCB, and / or PBO. Alternatively, in step 1122 and Figure 12K, after a desired number of redistribution layers 1260 have been formed, one or more completed semiconductor core assemblies 1270 may be singulated from intermediate core assembly 602.

[0100]

[0124] The completed semiconductor core assembly 1270 formed in step 1120 may be utilized in any suitable stacked package assembly, PCB assembly, PCB spacer assembly, chip carrier assembly, intermediate carrier assembly, etc. In one exemplary embodiment shown in FIG. 13A , a single semiconductor core assembly 1270 is utilized as a carrier for a chip 1360 within a chip carrier assembly 1300. The chip 1360 may be any suitable type of chip, including a memory chip, a microprocessor, a complex system-on-chip (SoC), or a standard chip. Suitable types of memory chips include DRAM chips or NAND flash chips. In some further examples, the chip 1360 is a digital chip, an analog chip, or a mixed chip. The chip 1360 is positioned adjacent to one of the major surfaces 1005, 1007 of the semiconductor core assembly 1270. In some embodiments, two or more chips 1360 may be positioned adjacent to a single major surface 1005, 1007. In another embodiment, one or more additional devices and / or structures, such as one or more components of a PCB or package substrate, may be located adjacent to chip 1360. For example, one or more passives, such as capacitors, resistors, inductors, etc., may be located adjacent to chip 1360. In another example, one or more connectors may be located adjacent to chip 1360.

[0101]

[0125] Chip 1360 includes one or more contacts 1348 formed on its active surface 1352. As shown, contacts 1348 are conductively coupled to one or more redistribution connections 1244 of semiconductor core assembly 1270 by one of more solder bumps 1346 disposed between active surface 1352 and major surface 1005. In some embodiments, contacts 1348 may be conductively coupled to one or more interconnects 1044 by one or more solder bumps 1346. In one embodiment, contacts 1348 and / or solder bumps 1346 are formed of a material substantially similar to the material of interconnects 1044 and redistribution connections 1244. For example, contacts 1348 and solder bumps 1346 may be formed from a conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable material or combination thereof.

[0102]

[0126] In one embodiment, the solder bumps 1346 comprise C4 solder bumps. In one embodiment, the solder bumps 1346 comprise C2 (Cu pillar with solder cap) solder bumps. Utilizing C2 solder bumps may allow for smaller pitch lengths and improved thermal and / or electrical properties for the chip carrier assembly 1300. The solder bumps 1346 may be formed by any suitable wafer bumping process, including, but not limited to, electrochemical deposition (ECD) and electroplating.

[0103]

[0127] 13B , the semiconductor core assembly 1270 is utilized within a PCB assembly 1302. The semiconductor core assembly 1270 is thus configured to function as a PCB structure for supporting (e.g., carrying) the package assembly 1310. The package assembly 1310 may be substantially similar in structure and materials to the semiconductor core assembly 1270, but includes an embedded die 1326 disposed within a cavity 1320 formed within the core structure 402 that is substantially surrounded by the insulating layer 618. The embedded die 1326 may further include an active surface 1328 having one or more contacts 1330 formed thereon and coupled to interconnects 1342 and / or redistribution connections 1344 of the package assembly 1310. 13A , the contacts 1330 and / or interconnects 1342 and / or redistribution connections 1344 of the package assembly 1310 are conductively coupled to one or more redistribution connections 1244 of the semiconductor core assembly 1270 by one of more solder bumps 1346 disposed between the active surface 1328 and the major surface 1005. In some embodiments, the contacts 1330 can be conductively coupled to one or more interconnects 1044 by one or more solder bumps 1346.

[0104]

[0128] 13C illustrates yet another exemplary embodiment utilizing a semiconductor core assembly 1270 as a PCB spacer structure within a PCB assembly 1304. As illustrated, the semiconductor core assembly 1270 is disposed between two PCBs 1362a, 1362b and is configured to position the first PCB 1362a relative to the second PCB 1362a such that a physical space remains between the first PCB 1362a and the second PCB 1362b while being conductively coupled. Accordingly, the PCBs 1362a, 1362b include one or more conductive pads 1368 formed on their major surfaces 1364a, 1364b, respectively. The one or more conductive pads 1368 are conductively coupled to the redistribution connections 1244 and / or interconnects 1044 of the semiconductor core assembly 1270 via one or more solder bumps 1346. Similar to the contacts 1330, 1348, the conductive pads 1368 are made of a material that is substantially similar to the material of the solder bumps 1346, the interconnects 1044, and the redistribution connections 1244 to enable electrical conductivity. For example, the conductive pads 1368 may be formed from a conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable material or combination thereof.

[0105]

[0129] 14A-14C illustrate configurations of semiconductor core assemblies 1270 that integrate one or more passive components or devices therein. As shown in FIG. 14A, in certain embodiments, the semiconductor core assembly 1270 includes one or more capacitors 1410a and / or 1410b integrated within a pocket 1420 in the core structure 402, allowing for more stable power delivery across the semiconductor core assembly 1270. Thus, in certain embodiments, the capacitors 1410a, 1410b may function as decoupling capacitors. In certain embodiments, the capacitors 1410a, 1410b are trench capacitors or planar capacitors. The capacitors 1410a, 1410b are formed from any suitable dielectric material, including, but not limited to, ceramic or silicon. In certain embodiments, the capacitors 1410a, 1410b are formed from a singulated silicon wafer, which may be singulated into individual capacitors upon polishing the silicon wafer to a desired thickness. In such an embodiment, the silicon wafer may be ground to a thickness substantially similar to that of the core structures 402 before being singulated.

[0106]

[0130] Generally, capacitors 1410a, 1410b have lateral dimensions between about 750 μm and about 175 mm (e.g., between about 1 mm and about 1.5 mm). Furthermore, capacitors 1410a, 1410b have thicknesses substantially less than that of core structure 402, such as less than about 1500 μm, such as less than about 780 μm, such as less than about 300 μm or about 200 μm. For example, capacitors 1410a, 1410b may have thicknesses less than about 150 μm or about 120 μm. In certain embodiments, capacitors integrated within semiconductor core assembly 1270 are stand-alone devices having thicknesses substantially similar to that of core structure 402, such as capacitor 1410a. In certain embodiments, capacitors are bonded to thin substrate 1402 and are thus stand-off devices having thicknesses less than that of core structure 402, such as capacitor 1410b. The capacitors 1410b may be adhered to the substrate 1402 with adhesive 1404 before being integrated into the semiconductor core assembly 1270. For example, multiple capacitors 1410 may be adhered onto the bulk substrate 1402 and then diced into standoff devices having desired dimensions for integration with the semiconductor core assembly 1270.

[0107]

[0131] Capacitors 1410a, 1410b can be integrated into semiconductor core assembly 1270 using the methods described above. Generally, pocket 1420 is patterned into core structure 402 along with core vias 403 in step 320 of method 300. In certain embodiments, pocket 1420 has lateral dimensions that are between about 10 μm and about 250 μm larger (e.g., between about 20 μm and about 150 μm, or between about 30 μm and about 100 μm larger) (e.g., longer) than the lateral dimensions of capacitors 1410a and / or 1410b to be embedded therein. For example, the lateral dimensions of pocket 1420 are sized to allow a 50 μm gap between the surface of capacitors 1410a and / or 1410b and the sidewalls of pocket 1420. In one embodiment utilizing method 500, capacitors 1410a and / or 1410b are then placed in pocket 1420 after performance of step 504, where patterned core structure 402 is attached to first insulating film 616a, but before step 506, first protective film 660 is placed over core structure 402. Alternatively, in another embodiment utilizing method 700, capacitors 1410a and / or 1410b are placed in pocket 1420 after attaching patterned core structure 402 to first insulating film 616a in step 710, but before attaching second insulating film 616b to core substrate 402 in step 720. In either embodiment, capacitors 1410a, 1410b become embedded in pocket 1420 by insulating layer 618 formed over both stacks of insulating films 616a and 616b.

[0108]

[0132] Thereafter, through-assembly vias 613 and / or redistribution vias 1253 are drilled through the insulating layer 618 directly above or below the contacts of the capacitors 1410 a, 1410 b to expose the contacts, as described with reference to steps 518 and 750. The through-assembly vias 613 and / or redistribution vias 1253 may then be metallized to enable electrical coupling of the capacitors 1410 a, 1410 b to other devices (e.g., power and ground) stacked with the semiconductor core assembly 1270. For example, one or more interconnects 1044 and / or redistribution connections 1244 may be formed according to methods 900 and / or 1100.

[0109]

[0133] 14B and 14C illustrate an exemplary configuration of a semiconductor core assembly 1270 with one or more inductors 1450 a and / or 1450 b integrated therein. FIG. 14B is a cross-sectional view of the semiconductor core assembly 1270, while FIG. 14C is a top view thereof. As shown, the interconnects 1044 and the redistribution connections 1244 are electrically connected in a coiled arrangement, where the redistribution connections 1244 are either metallized in a non-linear pattern or connect non-adjacent interconnects 1044. This coiled arrangement thus constitutes inductors 1450 a, 1450 b that are embedded within the semiconductor core assembly 1270 rather than disposed on its surface, thereby conserving surface area for stacking other components or devices on the semiconductor core assembly 1270. Additionally, forming the electrical connections of the semiconductor core assembly 1270 in a coiled configuration reduces its overall profile without utilizing additional resources or processes to incorporate an inductor device.

[0110]

[0134] In certain embodiments, the inductor integrated into the semiconductor core assembly 1270 includes a coiled arrangement of interconnects 1044 and redistribution connections 1244 formed around the core structure 402 and the insulating layer 618 without utilizing a magnetic core (e.g., inductor 1450a). In certain other embodiments, the inductor further includes a magnetic core 1460 embedded within the pocket 1420 of the core structure 402 and surrounded by a coiled arrangement of interconnects 1044 and redistribution connections 1244 (e.g., inductor 1450b). The magnetic core 1460 is formed from a ferrite-based material or a metal-polymer composite, generally including a polymer matrix with metal particles dispersed therein.

[0111]

[0135] 14A , the inductors 1450 a, 1450 b can be integrated into the semiconductor core assembly 1270 using the methods described above. For example, the magnetic core 1460 can be placed into the patterned pocket 1420 of the core structure 402 and then embedded on a stack of one or more insulating films (e.g., the insulating films 616 a, 616 b), as described with reference to methods 500 and 700. Furthermore, the drilling of the vias 403, the through-assembly vias 613, and the redistribution vias 1253, as well as the metallization of the interconnects 1044 and the redistribution connections 1244 (including, for example, the patterning of the resist 1250), can be performed in a manner that creates a coiled arrangement of the interconnects 1044 and the redistribution connections 1244 within the semiconductor core assembly 1270.

[0112]

[0136] 15A-15D illustrate additional configurations of the semiconductor core assembly 1270 that integrate additional types of passive devices. As shown in FIGS. 15A-15B, the semiconductor core assembly 1270 includes heat exchangers 1510a-c integrated at various locations thereon. The integration of heat exchangers 1510a-c, such as heat sinks, improves the heat dissipation and thermal performance of the semiconductor core assembly 1270 by transferring heat conducted by the silicon core structure 402. This configuration is particularly beneficial over conventional PCB configurations formed from glass-reinforced epoxy laminates, which have low thermal conductivity, where the addition of a heat exchanger would be of little value. Suitable types of heat exchangers 1510a-c include pin heat sinks, linear heat sinks, flared heat sinks, etc., which may be formed from any suitable material, such as aluminum or copper. In a specific embodiment, the heat exchangers 1510a-c are formed from extruded aluminum.

[0113]

[0137] In general, the heat exchangers 1510 a-c can be added to one or both sides of the semiconductor core assembly 1270. In certain embodiments, each heat exchanger 1510 a-c is placed directly above or below the core structure 402 without the insulating layer 618 disposed therebetween, as shown for heat exchanger 1510 a. To achieve this configuration, the insulating layer 618 of the completed semiconductor core assembly 1270 can be laser ablated in a desired area to form a pocket, after which the heat exchanger 1510 a can be mounted onto the core structure 402. For example, a region of the insulating layer 618 having lateral dimensions corresponding to those of the heat exchanger 1510 a can be removed with a CO 2 , UV, or IR laser configured to ablate only the dielectric material of the insulating layer 618, leaving the core structure 402 intact. The heat exchanger 1510a may then be placed within the opening and mounted onto the core structure 402, which may include an oxide layer or a metal cladding layer, via any suitable mounting method. In certain embodiments, an interface layer 1520 is formed between the heat exchanger 1510a and the core structure 402. For example, the interface layer 1520 may be formed from a thermal interface material (TIM), such as a thermal adhesive or potting compound. In certain embodiments, the interface layer 1520 is a thin layer of a flowable dielectric material substantially similar to that of the insulating layer 618.

[0114]

[0138] In certain embodiments, the heat exchangers 1510a-c are placed directly on the insulating layer 618 of the semiconductor core assembly 1270, as shown by heat exchanger 1510b. In such an example, laser ablation of the insulating layer 618 is not required. To optimize heat transfer between the core substrate 402 and the heat exchanger 1510b, the semiconductor core assembly 1270 may include one or more thermal bonds 1544 that thermally couple the core structure 402 to the heat exchanger 1510b. Unlike the interconnects 1044 and the redistribution connections 1244, the thermal bonds 1544 have no electrical function and only provide a path for thermal conductivity to the heat exchanger 1510b. In certain embodiments, the thermal bonds 1544 are formed in vias substantially similar to the through-assembly vias 613 and redistribution vias 1253 described above. Typically, the thermal bonds 1544 are formed of a metallic material, such as copper, aluminum, gold, nickel, silver, palladium, or tin.

[0115]

[0139] In certain embodiments, heat exchangers 1510a-c are mounted adjacent to active devices and elements stacked with semiconductor core assembly 1270. Generally, heat exchangers 1510a-c can be positioned in any configuration relative to the active devices or elements attached to semiconductor core assembly 1270. In FIGS. 15A-15B, heat exchanger 1510c is shown mounted on active devices 1550 and 1560, and heat exchanger 1510b is shown on the side of active devices 1550, 1560 (e.g., disposed laterally relative thereto). Mounting heat exchangers above and laterally to active devices 1550, 1560 increases thermal conductivity away from the active devices. In certain embodiments, additional heat exchangers can be positioned on the side of semiconductor core assembly 1270 opposite any active devices or elements, as depicted by heat exchanger 1510a. In certain embodiments, thermal bonds 1544 may also be formed between the core structure 402 and the active devices 1550, 1560 to thermally couple the active devices 1550, 1560 to the core structure 402 and assist in heat conduction from the active devices to the core.

[0116]

[0140] 15B, the heat exchangers 1510a-c may be further coupled to one or more fans 1570 to aid in heat dissipation by providing additional fluid flow for convection. While depicted as being directly attached to the heat exchangers 1510a-c, the fans 1570 may be mounted and oriented in any suitable location along the semiconductor core assembly 1270 for optimal fluid flow and thermal regulation. In embodiments in which the semiconductor core assembly 1270 is stacked with other packaging structures, such as PCBs 1362a, 1362b, a cavity 1580 may be formed in the additional structure directly above or below the heat exchangers 1510a-c to allow for the placement of the one or more fans 1570 and / or to facilitate heat dissipation therefrom.

[0117]

[0141] Instead of or in addition to the heat exchangers described above, the semiconductor core assembly 1270 may also have one or more heat pipes or head spreaders 1590 integrated at various locations thereon to improve heat dissipation and thermal modulation. FIGS. 15C-15D show an exemplary heat spreader 1590 and an exemplary arrangement of the heat spreader 1590 on the semiconductor core assembly 1270. Like the heat exchangers described above, the heat spreader 1590 transfers heat conducted by the silicon core structure 402. However, the heat spreader 1590 does so by utilizing a phase change of a liquid contained within its plenum 1593. For example, as shown in FIG. 15C , the heat spreader 1590 includes a thermal interface or evaporator 1591 that converts the contained liquid into a vapor 1594 by absorbing heat therefrom. In certain embodiments, the liquid is brought into contact with the evaporator 1591 via a wick 1592 disposed within the plenum 1593. Upon evaporation, the vapor 1594 travels within the heat spreader 1590 to a cold surface or condenser 1596, where the vapor 1594 condenses into a liquid condensate 1595, releasing and dissipating latent heat. The liquid condensate 1595 is then transported by capillary action (shown as reference numeral 1597) back through the wick 1592 to the evaporator 1591, and the cycle can be repeated for further heat transfer. This principle allows for efficient lateral transfer of heat away from the core structure 402 of the semiconductor core assembly 1270, for example, toward other heat dissipation devices.

[0118]

[0142] Similar to the heat exchangers described above, the heat spreader 1590 can be placed directly above or below the core structure 402 without the insulating layer 618 disposed therebetween. As shown in FIG. 15D , in certain embodiments, the heat spreader 1590 is placed directly between the core structure 402 and a heat exchanger, such as heat exchanger 1510c, to transfer heat therebetween. In certain embodiments, the heat spreader 1590 is placed directly on the insulating layer 618, with one or more thermal bonds 1544 thermally coupling the heat spreader 1590 to the core structure 402. Generally, the heat spreader 1590 is oriented such that the “hot side” or evaporator-containing side of the heat spreader 1590 is disposed closest to the core structure 402, while the “cold side” or condenser-containing side is disposed away from the core structure 402, such as adjacent to the heat exchanger 1510c in FIG. 15D . In some examples, the heat spreader 1590 may also be utilized in combination with one or more fans 1570 positioned proximate to the heat spreader 1590 and / or other heat dissipation devices for additional heat dissipation through air convection.

[0119]

[0143] 16 illustrates an example arrangement 1600 of the semiconductor core assembly 1270 described above, where the semiconductor core assembly 1270 facilitates variable densities of interconnects 1044 and redistribution connections 1244 for bridging two active devices 1650 and 1660 having active layers 1652 and 1662, respectively. As illustrated, the semiconductor core assembly 1270 includes a bridge 1610 embedded within a pocket 1420 of the core structure 402 and through which the active devices 1650 and 1660 are partially interconnected via its bridge redistribution layer 1620. The bridge 1610 is disposed beneath adjacent ends of the active layers 1652, 1662, providing high-density, short-distance interconnection of active device connections disposed at or near those ends, thus enabling localized high-density interconnection. However, connections for active devices located at the distal ends of the active layers 1652, 1662 are interconnected through the insulating layer 618 of the semiconductor core assembly 1270 via lower density but higher range signal paths formed by the interconnects 1044 and redistribution connections 1244, potentially reducing crosstalk compared to high density short distance interconnects.

[0120]

[0144] Generally, the bridge 1610 includes a silicon-containing base 1630 having a thickness substantially equal to or less than the thickness of the core structure 402. For example, the base 1630 has a thickness between about 80 μm and about 775 μm (such as between about 100 μm and about 400 μm, or between about 110 μm and about 300 μm). In a particular embodiment, the base 1630 is a high-density substrate, such as a high-density fan-out substrate comprising silicon dioxide, and the redistribution layer 1620 is a back-end-of-line (BEOL) redistribution layer. In a particular embodiment, the base 1630 is a high-density silicon interposer, and the redistribution layer 1620 is a dual damascene BEOL redistribution layer. The base 1630 supports the redistribution layer 1620 having a thickness up to about 1 μm. In a particular embodiment, the base 1630 supports a connection pitch ranging between about 0.3 μm and about 2 μm (such as between about 0.5 μm and about 1.5 μm). To fully utilize the relatively low pitch of the bridge 1610, the active devices 1650, 1660 may be soldered to the semiconductor core assembly 1270 via microbumps 1646 having a width or diameter between about 20 μm and about 150 μm, or between about 30 μm and about 80 μm, thus enabling a higher density interconnection therebetween. The microbumps 1646 may be formed from a material substantially similar to that of the interconnects 1044, redistribution connections 1244, or solder bumps 1346, such as copper, tungsten, aluminum, silver, gold, or any other suitable material or combination thereof. As with the passive devices of FIGS. 14A-14C , the bridge 1610 may be integrated into the semiconductor core assembly 1270 using any of the methods described above. For example, bridge 1610 with redistribution layer 1620 already formed thereon may be placed within patterned pocket 1420 of core structure 402 and then embedded on a stack of one or more insulating films (e.g., insulating films 616a, 616b) according to methods 500 and 700. Additionally, through-assembly vias 613 may be drilled through insulating layer 618 directly above the contacts of redistribution layer 1620 and then metallized to form interconnects 1044 and 1244, thus enabling subsequent connection of bridge 1610 to active devices 1650 and 1660.

[0121]

[0145] The use of semiconductor core assembly 1270 in the embodiments illustrated above offers multiple advantages over conventional package, PCB, PCB spacer, and chip carrier structures. Such benefits include a thin form factor and high chip or die-to-package volume ratio, enabling greater I / O scaling to meet the ever-increasing bandwidth and power efficiency demands of artificial intelligence (AI) and high-performance computing (HPC). The use of a structured silicon frame provides optimal material rigidity and thermal conductivity for improved electrical performance, thermal management, and reliability of three-dimensional integrated circuit (3D IC) architectures. Furthermore, the fabrication methods for through-assembly vias and via-in-via structures described herein offer high performance and flexibility for 3D integration at relatively low manufacturing costs compared to conventional TSV technology.

[0122]

[0146] By utilizing the above-described methods, high aspect ratio features can be formed on glass and / or silicon core structures, thereby enabling the economical formation of thinner and narrower circuit boards, chip carriers, integrated circuit packages, and the like. Semiconductor core assemblies manufactured using the above-described methods offer the benefits of high I / O density and improved bandwidth and power, as well as assembly architectures that allow for greater reliability and flexible solder ball distribution with lower stress due to lighter weight / reduced inertia. Further advantages of the above-described methods include economical manufacturing with double-sided metallization capabilities and high production yields. Additionally, the use of silicon cores reduces or eliminates the coefficient of thermal expansion (CTE) mismatch between the core assembly and any connected chips, allowing for smaller solder pitches and increased device density.

[0123]

[0147] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, which scope is determined by the following claims.

Claims

1. a first side opposite the second side; and a thickness of less than 1500 μm; a metal cladding layer formed on the first side and the second side; one or more conductive interconnects formed therethrough and having exposed surfaces on the first side and the second side; a silicon core structure including: a first redistribution layer formed on the first side; a second redistribution layer formed on the second side, the first redistribution layer and the second redistribution layer each having one or more conductive contacts formed thereon; and a semiconductor device assembly comprising:

2. The semiconductor device assembly of claim 1 , wherein the metal cladding layer comprises nickel.

3. 10. The semiconductor device assembly of claim 1, wherein the metal cladding layer has a thickness of between about 100 nm and about 5 μm on substantially all exposed surfaces of the silicon core.

4. The semiconductor device assembly of claim 1 , wherein the metal cladding layer circumferentially surrounds the one or more conductive interconnects formed through the silicon core structure.

5. 5. The semiconductor device assembly of claim 4, wherein the metal cladding layer is conductively coupled to ground by one or more conductive cladding connections disposed through the first redistribution layer and the second redistribution layer.

6. 5. The semiconductor device assembly of claim 4, wherein the metal cladding layer is conductively coupled to a reference voltage by one or more conductive cladding connections disposed through the first redistribution layer and the second redistribution layer.

7. a dielectric layer formed on the first side and the second side, the dielectric layer including a flowable epoxy resin material; The semiconductor device assembly of claim 1 , further comprising:

8. 8. The semiconductor device assembly of claim 7, wherein the epoxy resin material includes silica particles ranging in size between about 80 nm and about 1 μm.

9. 9. The semiconductor device assembly of claim 8, wherein the dielectric layer has a thickness between about 5 [mu]m and about 50 [mu]m.

10. one or more through-assembly vias arranged therethrough, each having a copper interconnect formed therein; The semiconductor device assembly of claim 7 further comprising:

11. The semiconductor device assembly of claim 10 , wherein each of the one or more through-assembly vias is circumferentially defined by the dielectric layer.

12. a silicon core structure having a thickness of less than 1500 μm; a metal or oxide layer formed on at least two surfaces of the silicon core structure; a dielectric layer formed on the metal or oxide layer, the dielectric layer comprising an epoxy resin having silica particles disposed therein; a semiconductor device assembly comprising:

13. one or more arrays of vias disposed therethrough and filled with copper, each of the vias in the one or more arrays having a diameter of less than about 500 μm; The semiconductor device assembly of claim 12 further comprising:

14. The semiconductor device assembly of claim 13 , wherein each via in the one or more arrays is circumferentially defined by the dielectric layer.

15. The semiconductor device assembly of claim 14 , wherein the dielectric layer circumferentially defining the one or more vias is circumferentially surrounded by the metal or oxide layer.

16. 14. The semiconductor device assembly of claim 13, further comprising a redistribution layer formed on the dielectric layer and having one or more redistribution connections, the redistribution connections and the copper filled vias forming an inductive coil.

17. 13. The semiconductor device assembly of claim 12, wherein the silicon core structure further includes one or more pockets formed therein, at least one of the one or more pockets including a silicon capacitor therein.

18. a heat exchanger bonded to said metal or oxide layer; The semiconductor device assembly of claim 12 further comprising:

19. a heat exchanger disposed on the dielectric layer The semiconductor device assembly of claim 12 further comprising:

20. a silicon core structure having a first side opposite a second side and a thickness of less than 1500 μm; a nickel cladding layer formed on the first side and the second side; a dielectric layer surrounding the nickel cladding layer, the dielectric layer comprising an epoxy resin; an array of vias disposed through the silicon core structure and filled with a conductive material, each via in the array of vias being defined by the dielectric layer; a redistribution layer formed on the dielectric layer; wherein the redistribution layer comprises: an adhesion layer formed on the dielectric layer, the adhesion layer comprising molybdenum; a copper seed layer formed on the adhesion layer; a copper layer formed on the copper seed layer; a semiconductor device assembly comprising:

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