Electronic device

Abstract

To provide an electronic apparatus capable of recognizing a user's emotion with high accuracy.SOLUTION: The electronic device includes a sensing device, an arithmetic device, and a housing. The housing has a space at a position overlapping with the nose when worn by the user. The detection device is located between the housing and the nose of the user. The detection device is configured to obtain user data on an emotion of a user and output the user data to the arithmetic device. The arithmetic device is configured to generate display data based on the user data and output the display data.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. In one embodiment of the technical field of the present invention, there are provided a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, Electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof For example, a semiconductor device functions by utilizing the semiconductor properties. This refers to all devices that can be used. [Background technology]

[0003] Augmented reality (AR) or virtual reality (VR) As display devices for Reality (VR), wearable and stationary display devices are being developed. Stand-alone display devices are becoming more common. Wearable display devices are, for example, headsets. Head Mounted Display (HMD), glasses-type display Stationary display devices include, for example, head-up displays (HUDs) :Head-Up Display) etc.

[0004] The head-mounted display is equipped with sensors and cameras to capture the user's body movements and facial expressions. Technologies are being considered to acquire this information and reflect it in the display. In 2, a camera is installed in the head-mounted display, and a configuration that recognizes the user's facial expressions is developed. is shown. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2017 / 122299 [Patent Document 2] Special table number 2018-538593 Summary of the Invention [Problem to be solved by the invention]

[0006] When a detection device is provided in an electronic device and information about the user's emotions is acquired, the detection device is used. If the sensor is placed far away from the user, the detection accuracy will be low, and the user's emotions will not be recognized with high accuracy. In addition, if the detection device protrudes from the housing of the electronic device, it may be difficult for the user or The detector may be damaged by interference with other objects, reducing the reliability of the electronic equipment. There is a risk.

[0007] One aspect of the present invention provides an electronic device that can recognize the emotions of a user with high accuracy. Another object of one embodiment of the present invention is to provide a method for detecting the type and degree of a user's emotion. It is an object of the present invention to provide an electronic device capable of highly accurate estimation. An object of one embodiment of the present invention is to provide a highly reliable electronic device. An object of one embodiment of the present invention is to provide a novel electronic device.

[0008] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter can be extracted from the description, drawings, claims, etc. [Means for solving the problem]

[0009] One embodiment of the present invention is an electronic device including a detection device, a computing device, and a housing. The detection device has a space at a position where it overlaps with the user's nose when worn. The detection device acquires user data relating to the user's emotions, and The computing device has a function of outputting the display data based on the user data to the computing device. It has the function of generating and outputting display data.

[0010] One embodiment of the present invention is an electronic device including a detection device, a computing device, and a housing. The detection device has a space at a position where it overlaps with the user's nose when worn by the user. The detection device is located inside the housing so as to overlap with the user data relating to the user's emotions. and outputs the user data to the computing device. and has the function of generating display data based on the above and outputting the display data.

[0011] One embodiment of the present invention is an electronic device including a detection device, a calculation device, a display device, and a housing. The housing has a space at a position where it overlaps with the user's nose when worn. The detection device is located between the user's nose and acquires user data relating to the user's emotions. The computing device has a function of outputting user data to the computing device. The computing device generates a table based on the user data. The display device has a function of generating display data and outputting the display data to a display device.

[0012] One embodiment of the present invention is an electronic device including a detection device, a calculation device, a display device, and a housing. The housing has a space at a position where it overlaps with the user's nose when worn. The detection device is located inside the housing so as to overlap with the nose of the user. The computing device has the function of acquiring the user data and outputting the user data to the computing device. It has the function of generating display data based on the data and outputting the display data to a display device.

[0013] In the electronic device, the detection device is a temperature sensor, a humidity sensor, a microphone, or an imaging device. It is preferred to have one or more of the devices.

[0014] In the aforementioned electronic devices, the user data may be any one of temperature, humidity, sound, or image. It is preferable that this is equal to or greater than this.

[0015] The electronic device preferably further comprises an adjustment mechanism. It has the function of adjusting the angle relative to the device's housing.

[0016] In the electronic device described above, the detection device preferably includes an imaging device. The image of the user is output to the computing device as user data. The device estimates the user's emotion from the user data and generates display data based on the estimated emotion. It has the function of creating

[0017] In the electronic device, the user data is an image of the user's nose. preferable.

[0018] In the electronic device, the user data is an image of the user's mouth. preferable.

[0019] In the electronic device described above, the estimation is preferably performed using a neural network. [Effects of the Invention]

[0020] According to one aspect of the present invention, an electronic device capable of recognizing a user's emotion with high accuracy is provided. Alternatively, according to one aspect of the present invention, the type and degree of the user's emotion can be determined with high accuracy. According to one embodiment of the present invention, an electronic device capable of estimating reliability can be provided. According to one embodiment of the present invention, a novel electronic device can be provided. do.

[0021] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. can be extracted from the description, drawings, claims, etc. [Brief explanation of the drawings]

[0022] [Figure 1] 1A and 1B are external views showing an example of the configuration of an electronic device. [Figure 2] 2A and 2B are external views showing configuration examples of electronic devices. [Figure 3] 3A and 3B are block diagrams showing configuration examples of electronic devices. [Figure 4] 4A to 4C are external views showing examples of the configuration of the housing. [Figure 5] 5A and 5B are external views showing configuration examples of electronic devices. [Figure 6] 6A and 6B are external views showing configuration examples of electronic devices. [Figure 7] 7A and 7B are diagrams illustrating the housing and the detection device. [Figure 8] 8A and 8B are external views showing configuration examples of electronic devices. [Figure 9] 9A and 9B are external views showing configuration examples of electronic devices. [Figure 10]10A and 10B are external views and block diagrams showing an example of the configuration of an electronic device, respectively. [Figure 11] 11A and 11B are external views showing configuration examples of electronic devices. [Figure 12] FIG. 12 is a block diagram showing an example of the configuration of an electronic device. [Figure 13] FIG. 13 is an external view showing a configuration example of an electronic device. [Figure 14] 14A and 14B are external views showing configuration examples of electronic devices. [Figure 15] FIG. 15 is an external view showing a configuration example of an electronic device. [Figure 16] 16A and 16B are external views showing configuration examples of electronic devices. [Figure 17] FIG. 17 is a block diagram showing an example of the configuration of the arithmetic device. [Figure 18] 18A and 18B are diagrams illustrating an example of the configuration of a neural network, and Fig. 18C is a diagram illustrating emotion estimation. [Figure 19] 19A1 to 19A4 and 19B1 to 19B4 are diagrams showing examples of images of a portion including a mouth. [Figure 20] 20A and 20B are diagrams showing examples of a user's field of view. [Figure 21] 21A and 21E are diagrams showing examples of a user's field of view. [Figure 22] 22A to 22C are diagrams showing examples of the configuration of the housing. [Figure 23] 23A and 23B are diagrams showing examples of the configuration of the housing. [Figure 24] 24A and 24B are external views showing examples of the configuration of the housing. [Figure 25] FIG. 25 is a block diagram showing an example of the configuration of a display device. [Figure 26] FIG. 26 is a block diagram showing an example of the configuration of a display device. [Figure 27] 27A to 27G are diagrams showing examples of pixel configurations. [Figure 28] 28A and 28B are circuit diagrams showing examples of pixel configurations. [Figure 29] Fig. 29A is a circuit diagram showing an example of the configuration of a pixel, and Fig. 29B is a timing chart showing an example of a method of operating the pixel. [Figure 30] 30A to 30E are circuit diagrams showing examples of pixel configurations. [Figure 31] FIG. 31 is a block diagram showing an example of the configuration of a display device. [Figure 32] FIG. 32 is a diagram illustrating an example of the operation of the display device. [Figure 33] FIG. 33 is a cross-sectional view showing an example of the configuration of a display device. [Figure 34] FIG. 34 is a cross-sectional view showing an example of the configuration of a display device. [Figure 35] FIG. 35 is a cross-sectional view showing an example of the configuration of a display device. [Figure 36] FIG. 36 is a cross-sectional view showing an example of the configuration of a display device. [Figure 37] 37A to 37E are diagrams showing configuration examples of a light-emitting device. [Figure 38] 38A and 38B are cross-sectional views showing configuration examples of an imaging device. [Figure 39] 39A is a top view illustrating an example of the structure of a transistor, and FIGS. 39B and 39C are cross-sectional views illustrating an example of the structure of a transistor. [Figure 40] Fig. 40A is a top view illustrating an example of the structure of a transistor, and Fig. 40B and Fig. 40C are cross-sectional views illustrating an example of the structure of a transistor. [Figure 41] Fig. 41A is a top view illustrating an example of the structure of a transistor, and Fig. 41B and Fig. 41C are cross-sectional views illustrating an example of the structure of a transistor. DETAILED DESCRIPTION OF THE INVENTION

[0023] Hereinafter, embodiments will be described with reference to the drawings. It is understood that the present invention may be embodied in various different forms without departing from its spirit and scope. It will be readily apparent to those skilled in the art that various modifications may be made to the embodiments and details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0024] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0025] In each drawing described in this specification, the size of each component, the thickness of a layer, or the area is not clearly indicated. The figures may be exaggerated for clarity and are not necessarily limited to that scale. .

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0027] In this specification, terms indicating placement such as "above," "below," "to the left," and "to the right" are used to indicate The positional relationship between the components is used for convenience in explaining the relationship with reference to the drawings. The positional relationship between them changes depending on the direction in which each component is depicted. The terms are not limited to those described in the specification, but may be rephrased appropriately depending on the situation.

[0028] A transistor is a type of semiconductor device that amplifies current and voltage and controls conduction or non-conduction. In this specification, the transistor can realize switching operations such as I GFET(Insulated Gate Field Effect Transis) transistors (TFTs) and thin film transistors (TFTs) include.

[0029] In this specification and the like, the functions of the source and drain of a transistor are The polarity of the terminals may be reversed when the direction of current flow changes during circuit operation. For this reason, the terms source and drain can be used interchangeably.

[0030] In this specification, "electrically connected" refers to a direct connection and a connection by some kind of electrical This includes cases where the device is connected via "something that has an electrical effect." "Something with electrical action" means something that allows the transmission and reception of electrical signals between connected objects. Therefore, even if it is expressed as "electrically connecting," In some circuits, there are no physical connections, just wires running. Even when it is expressed as a "direct connection," it is not the case that different conductors are connected via contacts. In addition, wiring may include cases where different conductors contain one or more of the same elements. In some cases, the element is a single element, and in other cases, it contains different elements.

[0031] Unless otherwise specified, in this specification and the like, the off-state current is the current that flows when a transistor is in an off state ( The drain current when the device is in a non-conducting state (also called a cut-off state). Unless otherwise specified, for n-channel transistors, the voltage between the gate and source, V gs but Threshold voltage V th (For p-channel transistors, V th (higher than It refers to one's attitude.

[0032] In this specification, the terms "electrode" and "wiring" are used to define these components functionally. For example, an "electrode" may be used as part of a "wiring" and Furthermore, the terms "electrode" and "wire" may be used interchangeably to refer to the plural "electrodes" and "wires." This also includes cases where the above are integrally formed.

[0033] In this specification, the resistance value of a "resistor" may be determined by the length of the wiring. The resistance value can be adjusted by connecting a conductor having a different resistivity from the conductor used in the wiring. Or, the resistance value may be determined by doping impurities into the semiconductor. There is.

[0034] In this specification, a "terminal" in an electric circuit refers to an input or output of a current or voltage, Therefore, a part of the wiring or electrode serves as a terminal. This may work.

[0035] In this specification, the term "metal oxide" refers to a metal in a broad sense. Metal oxides are oxides of the following: oxide insulators, oxide conductors (including transparent oxide conductors), ), oxide semiconductors (also referred to as oxide semiconductors or simply OS), etc. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, when describing an OS FET, In other words, a transistor including an oxide or an oxide semiconductor.

[0036] (Embodiment 1) In this embodiment, an electronic device of one embodiment of the present invention will be described with reference to drawings.

[0037] One embodiment of the present invention is an electronic device including a display device, a detection device, a computing device, and a housing. The detection device acquires data relating to the user's emotions and outputs the data to the calculation device. The calculation device generates display data based on the data, and outputs the display data. It has the function of outputting the data to a display device.

[0038] Data relating to the user's emotions may include, for example, temperature, humidity, or image quality around the nose or mouth. When a user is excited while using electronic devices, the image may appear around the nose or mouth. The temperature and humidity around the nose or mouth may be high. By capturing an image of the mouth, the degree of excitement of the user can be estimated. The type and degree of the user's emotion can be estimated. By displaying the information on the device, the user can recognize their own condition and feel more immersed. .

[0039] The electronic device according to one aspect of the present invention has a space in a portion of the housing where the nose of the user is positioned, The detection device is located in the space. By providing the detection device near the user's nose, It is possible to recognize the user's emotions with higher accuracy. By ensuring that the detection device does not protrude from the body, it is possible to prevent interference between the user or other objects. This can prevent the occurrence of electrical shock and improve the reliability of the electronic device.

[0040] <Electronic device configuration example 1> 1A, 1B, 2A, 2B, and 3 show examples of the configuration of an electronic device according to one embodiment of the present invention. 1A, 1B, 2A, and 2B are perspective views illustrating the appearance of the electronic device 10. 3A is a block diagram showing the configuration of the electronic device 10.

[0041] In the drawings attached to this specification, the components are classified by function and are separated into blocks independent of each other. Although the block diagram is shown as a block, the actual components are completely separated by function. It is difficult to do so, and one component may be involved in multiple functions, or one function may be involved in multiple components. It may be possible to achieve this simply.

[0042] The electronic device 10 has a function of displaying an image. The electronic device 10 is a head-mounted display. The electronic device 10 can be used as a head-mounted display (HMD). The present invention can be suitably used as a display device for displaying images for a television (TV) or virtual reality (VR) system. The electronic device 10 can also be called a goggle-type electronic device.

[0043] As shown in FIGS. 1A and 1B, the electronic device 10 includes a housing 11 and a detection device 17. The housing 11 has a space 41 at the bottom, and the detection device 17 is provided in the space 41. The space 41 can be regarded as a recess of the housing 11. When the user wears the electronic device 10, 1B, the housing 11 and the detection device 1 1A and 1B, the housing 11 is shown by a broken line in order to clearly show the positional relationship between the housing 11 and the power supply 7. The electronic device 10 can be used as an HMD by combining it with another electronic device having a display unit. It is possible.

[0044] As shown in FIGS. 2A and 2B, the electronic device 10 includes a housing 11, a display device 13, and a detection The electronic device 10 may include a device 17, a computing device 19, and a storage device 18. Furthermore, the optical member 15L and the optical member 15R may be included. 11, display device 13, detection device 17, calculation device 19, storage device 18, optical member 15L, and In order to clearly show the positional relationship between the housing 11 and the optical member 15R, the housing 11 is shown by a broken line.

[0045] The display device 13 has pixels and has a function of displaying an image. For example, liquid crystal display devices, light emitting devices (for example, light emitting devices each having a light emitting device in each pixel), electrophoretic display device, DMD (Digital Micromirror Device), PDP (Plasma Display Panel), FED (Field Emis) A display (e.g., a 3D display) can be used.

[0046] As a light-emitting device, OLED (Organic Light Emitting Diode) iode) and QLED(Quantum-dot Light Emitting Di) It is preferable to use a fluorescent material as the light-emitting material of the light-emitting device. materials that emit phosphorescence (phosphorescent materials), and materials that exhibit thermally activated delayed fluorescence ( Thermally activated delayed fluorescence Fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.) In addition, micro LEDs (Light Emitting Diodes) are used as light-emitting devices. An LED such as a LED (LED) can also be used.

[0047] When the electronic device 10 is used as a head-mounted display, the user's eyes and the display device The distance 13 is shorter, so the user can easily see the pixels and the graininess is felt more strongly. Therefore, the sense of immersion and realism of AR or VR may be diminished. It is preferable that the display be high-definition so that the pixels are not visible to the user. By using the display device 13, the user of the electronic device 10 can see the graininess without feeling it. The image displayed on the display device 13 can be viewed. The resolution of the display device 13 is, for example, 1000pp. Preferably, it is 1 ppi or more, more preferably 2000 ppi or more, and even more preferably 5000 ppi or more. In addition, in AR applications, images from a virtual space are displayed superimposed on the real space. Therefore, it is desirable that the brightness of the display device 13 is high, especially when the usage environment is bright.

[0048] The detection device 17 detects information about the environment around the electronic device 10 or data about the user's emotions. The device has a function to acquire user data (hereinafter also referred to as user data) and output it to the arithmetic unit 19. The user data may include, for example, temperature, humidity, sound, and images. For example, a temperature sensor, a humidity sensor, a microphone, or an imaging device can be used as the sensor 17. The imaging device may be, for example, a camera or a video camera. It should be noted that the detection device 17 may be a combination of a plurality of these.

[0049] The calculation device 19 calculates and processes the user data output from the detection device 17. A function of generating display data according to the user's emotions and outputting the display data to the display device 13. It has.

[0050] The arithmetic unit 19 may be, for example, a CPU (Central Processing Unit). it), DSP (Digital Signal Processor), GPU (Gr A 3D image processing unit (APM) or the like can be used. The device 19 is implemented as a field programmable gate array (FPGA). ) and FPAA (Field Programmable Analog Array) This is realized by PLD (Programmable Logic Device) The configuration may be as follows.

[0051] The storage device 18 stores the programs executed by the arithmetic unit 19 and the data input to the arithmetic unit 19. The data output from the processor 19 and the like are stored.

[0052] As the storage device 18, a storage device using a nonvolatile storage element can be suitably used. The storage device 18 may be, for example, a flash memory or an MRAM (Magnetor sistive Random Access Memory), PRAM (Phas e change RAM), ReRAM (Resistive RAM), FeRAM (Ferroelectric RAM) can be used.

[0053] FIG. 3B shows a configuration different from that of electronic device 10 shown in FIG. 3A.

[0054] The electronic device 10 shown in FIG. 3A includes an input / output device 21. The device has a function to acquire information from the outside and a function to output information to the outside. The output device 21 has a function of acquiring information from the arithmetic device 19 and a function of outputting information to the arithmetic device 19. The information acquired from the outside of the electronic device 10 includes, for example, video, music, games, etc. The information to be output to the outside of the electronic device 10 is, for example, There is the user's emotion obtained at 0.

[0055] The input / output device 21 can communicate with a wired or wireless network. It is possible to input and output information to and from the server 23 via the network. When using wired communication, Wi-Fi (registered trademark), Bluetooth (registered trademark), etc. In addition to short-range communication methods, there is also LTE, a communication method that complies with the third-generation mobile communication system (3G). (sometimes called 3.9G), a communication method that complies with the fourth generation mobile communication system (4G) or communication means compliant with the 5th generation mobile communication system (5G), etc. Various communication means can be used.

[0056] The housing 11 will be described with reference to FIGS. 4A to 4C. 4B is an external view showing the configuration of the display device 13, the detection device 17, the housing 11, and In order to show the positional relationship between the display device 13 and the detection device 17, the display device 13 and the detection device 17 are each shown by dashed lines.

[0057] The housing 11 includes a first portion 12a, a second portion 12b, a third portion 12c, and a fourth portion 12d. 4A and 4B show the first portion 12d and the fifth portion 12e. 4C shows a perspective view of the first portion 12a from the opposite side (user side). 1 shows a perspective view from the side opposite the user.

[0058] The second portion 12b is connected to the first portion 12a. The third portion 12c is connected to the first portion 12a. The third portion 12c is connected to the second portion 12b via the third portion 12a. The fourth portion 12d has a space 41 shown by a dashed line at B. The fifth portion 12e is connected to the first portion 12b and the third portion 12c. a, the second portion 12b, and the third portion 12c. The first to fifth portions 12e may be detachable from each other. 12d and the fifth portion 12e are not connected to each other, one embodiment of the present invention is However, the fourth portion 12d and the fifth portion 12e may be connected to each other.

[0059] As shown in FIG. 4B, the display device 13 has a second portion 12b and a third portion 12c. The display device 13 is located in one or more of the first portion 12a and the fifth portion 12e. The detection device 17 is provided in the space 41 of the third portion 12c.

[0060] Housing 11, display device 13, detection device 17, arithmetic unit 19, storage device 18, optical member 15 Regarding the positional relationship between L and the optical member 15R, see FIGS. 2A, 2B, 5A, 5B, and 6A. This will be explained with reference to FIG. 6B.

[0061] FIG. 5A is an external view of the electronic device 10 as seen from the opposite side (user side) of the first portion 12a. FIG. 5B is an external view of the electronic device 10 as seen from the fourth section 12d side (the user's left side). FIG. 6A is an external view of the electronic device 10 as seen from the second portion 12b side (the upper side of the user). FIG. 6B is an external view of the electronic device 10 as seen from the third portion 12c side (the bottom side of the user). 5A, 5B, 6A, and 6B, the first portion 12a, the second portion 12b, and the third portion 12c are arranged in a circular pattern. The third portion 12c, the fourth portion 12d, and the fifth portion 12e are indicated by dashed lines. 5B and 6A show an example of the electronic device 10 worn by a user. 5B, the detection device 17, the storage device 18, and the calculation device 19 are omitted for clarity of the drawing. are.

[0062] The detection device 17 is preferably fixed to the third portion 12c. As shown in FIG. 1, it is preferable that the detection device 17 does not protrude from the housing 11. When the detection device 17 protrudes from the body 11, the user or other objects may interfere with the detection device 17. The detector 17 is provided in the space 41 and does not protrude from the housing 11. This prevents damage to the detection device 17. Therefore, the reliability of the electronic device 10 can be improved. Furthermore, the electronic device 10 can be made smaller, and convenience and This can improve the design quality.

[0063] The space 41 will be described. The space 41 as seen from the fourth portion 12d side (the left side of the user). An enlarged view of the space 41 as viewed from the third portion 12c side (below the user) is shown in FIG. A larger view is shown in Figure 7B.

[0064] As shown in FIGS. 5B, 7A, and 7B, the space 41 widens from the top to the bottom. The side of the space 41 is preferably shaped so that the detection device 17 is positioned so as to be close to the nose of the user. It is preferable that the angle be such that information about the mouth can be easily obtained.

[0065] The angle θ1 between the housing 11 and the lower bottom of the space 41 is preferably 120 degrees or more and 170 degrees or less. It is preferable that the temperature is 130 degrees or more and 165 degrees or less, and more preferable that the temperature is 135 degrees or more and 160 degrees or less. Preferably, the angle is 140 degrees or more and 160 degrees or less, more preferably, 145 degrees or more and 160 degrees or less. The angle is preferably 55 degrees or less, and more preferably 150 degrees or more and 155 degrees or less. The length LB is preferably 30 mm or more and 100 mm or less, and more preferably 40 mm or more and 95 mm or less. Preferably, the distance is 50 mm or more and 90 mm or less, more preferably 60 mm or more. The length of the space 41 is preferably 85 mm or less, and more preferably 70 mm or more and 80 mm or less. The length LH is preferably 30 mm or more and 100 mm or less, and more preferably 40 mm or more and 95 mm or less. is preferable, and more preferably 50 mm or more and 90 mm or less, and further preferably 60 mm or more and 85 mm or less. The space 41 is preferably 70 mm or more and more preferably 80 mm or less. By adopting this shape, the detection device 17 can be provided at a position that does not interfere with the user's nose. Furthermore, the detection device 17 can be installed at an angle that makes it easy to obtain information about the user's nose or mouth. Cut.

[0066] As shown in FIG. 5B, it is preferable that the housing 11 does not cover the mouth of the user. If the device is designed to cover the user, the user may feel discomfort or a sense of pressure. In one embodiment, the electronic device 10 has a housing 11 that does not cover the mouth of the user, and the housing 11 does not cover the mouth of the user. can be obtained.

[0067] In FIG. 2A and other figures, the detector 17 is positioned outside the housing 11. As shown in FIG. 8A, the detecting device 17 is provided inside the housing 11. By providing the detection device 17 inside the housing 11, the user and the detection device 17 can be easily This can suppress interference and improve the reliability of the electronic device. The housing 11 may have an opening (not shown) located between the ejection device 17 and the user. By providing the opening, the detection accuracy of the detection device 17 can be improved.

[0068] An enlarged view of the space 41 is shown in FIG. 8B. The angle θ1 between the housing 11 and the lower bottom of the space 41 is preferably in the above-mentioned range.

[0069] The electronic device 10 may have an adjustment mechanism for adjusting the position and angle of the detection device 17. 9A and 9B show a configuration in which the electronic device 10 includes an adjustment mechanism 45. 5 has a function to adjust the position and angle of the detection device 17, and The adjustment mechanism 45 is fixed to the housing 11. It is preferable that

[0070] The angle θ2 formed between the housing 11 and the detector 17 is preferably within the range of the angle θ1 described above. By setting the angle θ2 within the above range, the detection device 1 can be positioned so as not to interfere with the nose of the user. 7 can be provided. Furthermore, the detection device 17 can be used to easily obtain information about the user's nose or mouth. For example, by making the angle 2θ smaller, it is possible to For example, by increasing the angle 2θ, it becomes easier to obtain information about the user's mouth. It's easier to get.

[0071] 2A and the like shows a configuration in which one detection device 17 is provided in the space 41. However, this is not a limiting example of the present invention. A plurality of detection devices 17 may be provided in the space 41. FIG. 10A shows an external view of an electronic device 10 provided with a detection device 17L and a detection device 17R. A block diagram showing the configuration of the electronic device 10 is shown in FIG. 10B. FIG. 10A shows the first part. 10A is an external view of the electronic device 10 as seen from the opposite side (user side) of the arrow 12a. , a first portion 12a, a second portion 12b, a third portion 12c, a fourth portion 12d, and The portion 12e of 5 is shown by a dashed line.

[0072] For example, in the space 41, the detection device 17L is on the left side of the user, and the detection device 17R is on the right side of the user. In this case, the detection device 17L can obtain information on the left side of the user's nose as follows: The detector 17R can obtain information on the right side of the nose. so that the detector 17R can obtain information on the right side of the user's mouth and the detector 17R can obtain information on the left side of the user's mouth. The angles at which the detectors 17L and 17R are provided may be adjusted.

[0073] The user data acquired by the detection device 17L and the detection device 17R are respectively input to the calculation device 1 By using multiple detection devices, the user's emotions can be obtained with higher accuracy. It is possible.

[0074] The computing device 19 and the storage device 18 are respectively a second part 12b and a third part 12c. The computing device 19 and the storage device 18 are located between the first part 12a and the second part 12b, respectively. any one or more of the first portion 12b, the third portion 12c, the fourth portion 12d, and the fifth portion 12e 2A and the like, the arithmetic unit 19 and the storage unit 18 may be fixed on the 5 is located on the side of the portion 12e, however, one embodiment of the present invention is not limited to this.

[0075] The optical member 15L and the optical member 15R each have a second portion 12b and a third portion 12c. The optical member 15L and the optical member 15R are located between the first portion 12 and the second portion 12c. a, the second portion 12b, the third portion 12c, the fourth portion 12d, or the fifth portion 12e It may be fixed to one or more of them.

[0076] As shown in FIG. 5B etc., the detection device 17 is provided in the space 41. When in use, the user's nose is positioned in the space 41. The space 41 has a width of 1.5 mm from top to bottom. In other words, the space 41 is preferably shaped such that the width of the space 41 is wider from the second portion 12b side to the first portion 12b side. It is preferable that the width of the space 41 becomes wider toward the portion 12c of the space 41. By having such a shape, the detection device 17 provided in the space 41 can be easily detected by the user's nose or makes it easier to obtain information about the area around the mouth.

[0077] If the user becomes excited while using the electronic device 10, the body temperature will rise and the user's breathing and breathing will become louder. The temperature of the exhaled air also increases, and the temperature of the environment around the nose and mouth may also increase. 7 uses a temperature sensor to acquire the temperature of the environment around the nose or mouth, The degree of excitement can be estimated. For example, the higher the temperature of the environment around the nose or mouth, , it can be estimated that the user is highly excited.

[0078] If the user becomes excited while using the electronic device 10, the body temperature may rise and the nose or mouth may become hot. The temperature of the surrounding skin may become high. By measuring the skin temperature around the mouth, it is possible to estimate the user's level of excitement. For example, it can be estimated that the higher the skin temperature around the nose and mouth, the higher the level of excitement of the user. can.

[0079] If the user becomes excited while using the electronic device 10, breathing will become faster, and snorting and Exhalation may increase the humidity of the environment around the nose or mouth. The humidity sensor measures the humidity around the nose and mouth to determine the user's level of excitement. For example, the higher the humidity around the nose and mouth, the more the user's arousal. It can be assumed that the level of excitement is high.

[0080] If the user becomes excited while using the electronic device 10, the user's voice may become louder. By using a microphone as a voice recorder, the degree of excitement of the user can be estimated. For example, it can be estimated that the louder the user's voice, the higher the level of excitement of the user. It is possible.

[0081] When a user gets excited while using the electronic device 10, their body temperature rises and they start to sweat. The detection device 17 is used to capture an image of the nose or the area under the nose, and the nose or the area under the nose is detected. By acquiring the sweating state under the For example, the more sweating there is on the nose or under the nose, the higher the level of excitement of the user can be estimated. can.

[0082] While using the electronic device 10, the type and degree of the user's emotion may change. The device 17 uses an imaging device to capture an image of the mouth and acquire the shape of the mouth, thereby enabling the user to understand the emotion of the user. The type and extent of the damage can be estimated.

[0083] When an imaging device is used as the detection device 17, the detection device 17 is configured to receive a light source (not shown). By including a light source, light emitted from the light source is reflected by the user's face, The reflected light can be detected by the detection device 17. For example, the light source has a function of emitting red light. Preferably, the imaging device has a function of detecting red light. It is preferable that the device has a function of emitting ambient light, and the imaging device has a function of detecting near-red light. For example, the light source has a function of emitting mid-infrared light, and the imaging device has a function of detecting mid-red light. For example, the light source has a function of emitting far-infrared light, and the imaging device is It is preferable that the electronic device 10 has a function of detecting the sweating state of the user. It is possible to obtain the shape of the face and mouth with high accuracy.

[0084] In this specification, infrared light refers to light having a wavelength of, for example, 0.7 μm or more and 1000 μm or less. Further, near-infrared light refers to light having a wavelength of 0.7 μm or more and 2.5 μm or less, for example. Mid-infrared light refers to light with a wavelength of, for example, 2.5 μm or more and 4 μm or less. indicates light with a wavelength of, for example, 4 μm or more and 1000 μm or less. Alternatively, far-infrared light may be simply referred to as infrared light. For example, it refers to light having a wavelength of 0.6 μm or more and 0.75 μm or less.

[0085] The electronic device 10 according to one embodiment of the present invention includes a detection device 17, which detects the excitement of the user. The degree of the user's emotion, as well as the type and degree of the user's emotion, can be acquired. In this context, the degree of excitement of the user, as well as the type and degree of the user's emotions, are collectively referred to as the user's The electronic device 10 according to one aspect of the present invention responds to the user's emotions. The information can be displayed on the display device 13. The user's facial expression can be displayed on the display device 13. Good. Users can recognize their own emotions, which increases the sense of immersion. By recognizing their own emotions, users can make choices such as taking a break.

[0086] As shown in FIG. 5B, the detector 17 may be located outside the housing 11. In this case, the detection device 17 is located between the housing 11 and the user's nose. By configuring the detector 17 so that the detector 17 is positioned outside the housing 11, the housing 11 can be placed between the user and the detector 17. Since there is no need for the above, the detection accuracy of the detection device 17 can be improved.

[0087] The area of ​​the second portion 12b opposite to the first portion 12a is the portion that comes into contact with the user's forehead. In addition, the area of ​​the third portion 12c opposite to the first portion 12a is in contact with the cheek of the user. Each of the regions preferably has a curved shape, and in particular, It is preferable that the area has an arc shape toward the first portion 12a side. By having a circular or arcuate shape, the second portion 12b can be brought into close contact with the forehead or cheek of the user. Therefore, light leakage from the outside of the electronic device 10 is suppressed, and the user can The shape of the housing 11 of the electronic device 10 is as shown in FIG. It is not limited to the configuration shown.

[0088] The optical member 15L and the optical member 15R each have an area overlapping with the display device 13, The optical member 15L and the optical member 15R are positioned between the display device 13 and the user. The image displayed on the display device 13 can be viewed through the left eye. The optical element 15L for the first eye and the optical element 15R for the right eye are shown. Each of the optical members 15R projects an enlarged image displayed on the display device 13 to the user. The optical members 15L and 15R may be, for example, convex lenses. In FIG. 2A and other figures, the optical members 15L and 15R are each formed of a single convex plate. Although a lens is shown, the shape is not particularly limited, and multiple optical elements may be used in combination. good.

[0089] The optical members 15L and 15R may be made of, for example, plastic or glass. Plastic is a material that has high transparency to visible light. For example, urethane resin, acrylic resin, carbon resin, and allyl resin are used. In addition, these plastics do not contain halogens, aromatic rings, or other compounds with large atomic refraction. By using a material containing sulfur, the refractive index of the optical members 15L and 15R can be The halogen may be, for example, one or more of chlorine, bromine, and iodine. It is preferable to use the above.

[0090] <Electronic device configuration example 2> 2A and the like shows an example of a configuration in which the electronic device 10 has one display device. The embodiment is not limited to this. An electronic device according to one embodiment of the present invention may include a plurality of display devices. An example of the configuration of an electronic device 10a having two display devices is shown in FIGS. 11A and 11B. FIG. 11A is a perspective view illustrating the appearance of the electronic device 10a. FIG. 11B is a perspective view illustrating the appearance of the second part 10a. 11A and 11B show the external appearance of the electronic device 10a as seen from the housing 12b side. 11 is shown by a broken line. Also, FIG. 11B shows the state when the user wears the electronic device 10a. An example is shown.

[0091] The electronic device 10a shown in FIGS. 11A and 11B includes a display device 13L and a display device 13R. The electronic device 10a has the display device 13L and the display device 13R, so that the user can Each eye can see the image displayed on one display device, which allows for parallax Even when performing 3D display using a 3D display, high-resolution images can be displayed.

[0092] A block diagram showing an example of the configuration of the electronic device 10a is shown in FIG. The display data is output as different data to the display device 13L and the display device 13R. Be encouraged.

[0093] As shown in FIG. 13, the electronic device 10a may further include a separator 29. The display device 29 is provided so as to be perpendicular to the display surfaces of the display devices 13L and 13R. It is preferable that the separator 29 is used more frequently than the display device 13L and the display device 13R. It is preferable that the separator 29 is provided on the user side. By doing so, the display seen by the left and right eyes can be made different, generating binocular disparity. This binocular parallax allows the user to perceive the image in three dimensions.

[0094] In FIG. 2A and other figures, an example of a configuration in which the display device of the electronic device is flat is shown. The embodiment is not limited thereto. A display device included in an electronic device according to one embodiment of the present invention may be curved. An example of the configuration of an electronic device 10b having a curved display device is shown in FIG. 14A and FIG. 14B. FIG. 14A is a perspective view illustrating the appearance of the electronic device 10b. FIG. 14B is a perspective view illustrating the appearance of the electronic device 10b. 14A and 14B show the external appearance of the electronic device 10b as viewed from the second portion 12b side. In FIG. 14B, the housing 11 is shown by a broken line. Also, FIG. 14B shows the state in which the user has installed the electronic device 10b. An example of the device being worn is shown.

[0095] In FIG. 14A and FIG. 14B, the display device 13L and the display device 13R are respectively The figure shows a configuration in which the lens is curved in an arc shape with the user's eye as the approximate center. Since the distance from the screen to the display surface is constant, users can see more natural images. In addition, the brightness and chromaticity of the light from the display may change depending on the viewing angle. Even in this case, the user's eyes are positioned in the normal direction of the display surface of the display unit, so the shadow is practically invisible. Since the noise can be ignored, more realistic images can be displayed.

[0096] <Electronic device configuration example 3> An example of a configuration different from the electronic device 10 and the electronic device 10a described above is shown in FIG. 15. 10 is a perspective view illustrating the appearance of the electronic device 10b.

[0097] As shown in FIG. 15, the electronic device 10b includes a housing 11, a detection device 17, and a calculation device 19. The housing 11 has a space 41 at the bottom, and the detection device 1 is installed in the space 41. The electronic device 10b is different from the electronic device 10 and the electronic device 10a in that it does not have a display device 13. The electronic device 10b is mainly different from the electronic device 10a in that it further includes an optical member 15L and an optical The material 15R may be included.

[0098] As shown in FIGS. 16A and 16B, the electronic device 10b is a display device that is similar to another electronic device having a display unit. The other electronic device may be, for example, a smartphone. The other electronic device may be an electronic device such as a portable game machine. 10b is connected to the arithmetic unit 19 via a connector (not shown).

[0099] 16A and 16B show a smartphone that can be used as the electronic device 31. The electronic device 31 has a display unit 33, and the electronic device 31 is configured to receive an electronic device through an opening 43. 10b, it can function in the same way as the display device 13 in FIG. 2A. can.

[0100] 15 and 16A show a configuration in which the second portion 12b has an opening 43. However, one embodiment of the present invention is not limited to this. The opening 43 may be provided in one or more of the portions 12e. It is possible to configure the device so that some parts are detachable, and by removing the parts, the electronic device can be The container 31 can be attached inside the electronic device 10b. For example, the first portion 12a By making the first part 12a detachable, the user can turn off the electronic device 31 by removing the first part 12a. Since there is no opening 43, the electronic device This can prevent external light from entering inside 10b.

[0101] <User Emotion Estimation> We will explain how to estimate the user's emotions. Here, we use an image of the user's mouth. I will explain this by giving some examples.

[0102] A block diagram showing an example of the configuration of the arithmetic unit 19 is shown in FIG. 17. The arithmetic unit 19 has the following features: The device includes an extraction unit 53, an estimation unit 54, and an information generation unit 55.

[0103] The feature extraction unit 53 extracts features from the image of the area including the user's mouth output from the detection device 17. The feature amount is calculated from the position of the feature point and output to the estimation unit 54. Possess the ability.

[0104] When the information acquired by the detection device 17 is an image of a part including a mouth, for example, The top of the upper lip, the bottom of the lower lip, the right corner of the mouth, and the left corner of the mouth can be used.

[0105] As a method for extracting features by the feature extraction unit 53, various algorithms can be applied. The feature extraction unit 53 can extract the feature using, for example, SIFT (Scaled Invariant Fourier Transform). ature Transform), SURF(Speeded Up Robust Features), HOG (Histograms of Oriented Grass) Algorithms such as dients can be used.

[0106] The feature extraction unit 53 can use a neural network for feature extraction. A schematic diagram of the neural network NN1 that can be used in the feature extraction unit 53 is shown in FIG. A neural network NN1 includes an input layer 61, an intermediate layer 62, and an output layer 63. 18A shows a configuration in which the feature extraction unit 53 has three intermediate layers 62. However, one aspect of the present invention is not limited to this. Any configuration having the above may be used.

[0107] Data 71 is input to the neural network NN1. For example, For example, image data captured by the detection device 17 can be used. The neural network NN1 outputs data 72. The data 72 is data including the above-mentioned feature points.

[0108] The neural network NN1 extracts the above-mentioned feature points from data 71 such as image data. The neural network is trained to extract the coordinates of the object and output them. In the NN1, edge processing using various filters is performed in the intermediate layer 62, The neural value of the output layer 63 corresponding to the coordinates where the feature points exist is trained to be high. are.

[0109] The estimation unit 54 estimates the usage of the electronic device 10 from the information on the feature points input from the feature extraction unit 53. The estimation unit 54 has a function of estimating the emotion of the user and outputting the estimated information to the information generation unit 55. A neural network can be used for the estimation by

[0110] A schematic diagram of the neural network NN2 that can be used in the estimation unit 54 is shown in FIG. 18B. FIG. 18B shows a case where the estimation unit 54 estimates the emotion of the user of the electronic device 10. In addition, the neural network NN2 is roughly the same as the neural network NN1. The input layer 6 of the neural network NN2 is The number of neurons in NN1 can be less than that in the neural network NN1.

[0111] The neural network NN2 receives the data 72 generated by the feature extraction unit 53. The data 72 includes information relating to the coordinates of the extracted feature points.

[0112] The data input to the neural network NN2 is the processed data of Data 72. For example, a vector connecting any two feature points may be calculated, and all of these may be used as a The feature points or some of the feature points are input to the neural network NN2. Alternatively, the calculated vector may be normalized. In the following, we will use the processed data 72 output by the neural network NN1. This will also be written as Data 72.

[0113] Data 72 is input to neural network NN2, which outputs data 73. The data 73 corresponds to the neuron values ​​output from each neuron in the output layer 63. Each neuron in the output layer 63 is associated with one emotion. Thus, the data 73 is generated from neural networks corresponding to a given emotion (joy, pleasure, surprise, disgust, etc.). The data contains the neuron values ​​of the

[0114] The neural network NN2 estimates the degree of each emotion from the data 72 and The neural network NN2 has been trained in advance to output the input value. This allows the user's emotions to be estimated from the shape of the user's mouth.

[0115] FIG. 18C is a diagram showing a schematic diagram of data 73. The higher the value of the emotion, the higher the degree of the estimated emotion. The degree of another emotion may be estimated from the degree of the other emotion. The data is designated as data 74. In FIG. 18C, the degree of emotion such as joy, pleasure, surprise, disgust, etc. is calculated. , which shows the case of estimating the degree of interest.

[0116] The degree of interest contained in data 74 is different from the degree of joy and pleasure contained in data 73. The degree of emotion, such as happiness, surprise, or disgust, can be estimated by inputting it into a predetermined formula. For example, the greater the degree of joy, pleasure, and surprise, the greater the degree of interest. Set up the formula so that the greater the degree of disgust, the smaller the degree of interest. can be done.

[0117] Note that emotion estimation can also be performed without using a neural network. For example, The image of the area including the user's mouth acquired by the detection device 17 is compared with the template image. Then, the similarity is used in the template matching method or the pattern matching method. In this case, the feature extraction unit 53 may not be provided.

[0118] The information generating unit 55 determines information to be presented to the user based on the emotion estimated by the estimation unit 54. The display device 13 has a function of determining or generating the information and outputting it to the display device 13. It is possible to present information corresponding to the information generated by the information generating unit 55.

[0119] The data 72 output from the feature extraction unit 53 is not input to the estimation unit 54, but is generated as information. For example, the feature extraction unit 54 may be used without performing estimation by the estimation unit 54. The user's emotions can be detected by the extraction of feature points by the detector 53. In this case, the data 72 output from the feature extraction unit 53 is directly input to the information generation unit 55. This allows the power consumption of the electronic device 10 to be reduced.

[0120] An example of an image of the user's mouth that can be used as the data 71 is shown in FIG. 19A1 to 19A4 show the state where the user's emotion is "joy" and A state of high level of "fun", a state of high level of "surprise", a state of high level of "disgust" 19B1 to 19B4 show examples of images of a portion including a mouth with a high degree of blur. 19A1 to 19A4 are examples of extracted feature points from the images of the mouth area, respectively. 19B1 to 19B4, the upper end LP of the upper lip TL , LP T , LP TR , lower end of lower lip LP BL , LP B , LP BR , Right corner of mouth LP R , and left corner of mouth LP L Features The feature extraction unit 53 extracts these feature points and The information is output to the estimation unit 54. The estimation unit 54 estimates the user's emotion from the information on the feature points. The information estimating unit outputs the information of the user's emotion to the information generating unit 55. The information to be presented to the user is determined or generated from the Then, the display device 13 can display the information to be presented to the user.

[0121] <Examples of information presented to users> An example of user information presented on the electronic device will be described below.

[0122] Examples of the field of view of a user when using an electronic device according to one embodiment of the present invention are shown in FIGS. 20A and 20B. 21A and 21B. This shows an example of the field of view when viewing images of tourist spots.

[0123] 20A and 20B each show a user's interest level displayed at the bottom left of the field of view, superimposed on the displayed image. Information 81 and information 82 that simulate the degree of excitement are presented.

[0124] The information 81 shown in FIG. 20A indicates that the user's level of excitement is high based on the user data. For example, if the temperature of the environment around the user's nose or mouth is above a predetermined temperature, The skin temperature around the nose or mouth is above a specified temperature, and the humidity of the environment around the nose or mouth is above a specified humidity. , the volume of the voice is above a certain volume, or the amount of sweating on the nose or under the nose is above a certain amount. In this case, it can be determined that the user is highly excited.

[0125] User data may be presented as information 81. For example, the user's nose or mouth area may be The temperature of the environment can be presented as information 81. For example, the volume of a voice can be presented as information 81. It can be presented.

[0126] The information 82 shown in FIG. 20B indicates that the level of excitement of the user is determined to be low based on the user data. For example, if the temperature of the environment around the user's nose or mouth is below a predetermined temperature, or the skin temperature around the nose or mouth is below a specified temperature, or the humidity of the environment around the nose or mouth is below a specified humidity. , the volume of the voice is below a certain volume, or the amount of sweating on or under the nose is below a certain amount. In this case, it can be determined that the user's level of excitement is low.

[0127] As described above, by presenting the user with the level of excitement, the user can The user can recognize the degree of excitement and increase the sense of immersion. By recognizing the extent of your stress, you can make choices such as taking a break.

[0128] 21A and 21B each show a character in the lower left corner of the field of view superimposed on the displayed image. Information 91 and information 92 that mimic the above are presented.

[0129] FIG. 21A shows an example in which the user's emotion is determined to be high in "fun." For example, in FIG. 18C, the neuron value of "fun" corresponds to the highest value. 21A shows an example in which the user's interest is judged to be high. For example, in FIG. In C, the value exceeds the threshold value Th2.

[0130] FIG. 21B shows the degree of the user's emotions, such as "joy," "pleasure," "surprise," and "disgust." For example, in Figure 18C, all neuron values ​​are judged to be low. does not exceed the threshold value Th1. For example, in FIG. 18C, the value is determined to be low when the threshold value Th2 This corresponds to the case where the value does not exceed 100.

[0131] In FIG. 18C, if the user's emotion is judged to be high in "joy," for example, 21C. When the user's emotion is high, the information 93 shown in FIG. 21C can be displayed. If it is determined that the user is using the information 94 shown in FIG. 21D, for example, the information 94 may be presented. If the emotion of the person is judged to be high in "dislike," for example, information 95 shown in FIG. 21E is displayed. can be presented.

[0132] 21A and 21B show an example of presenting one piece of information, but one aspect of the present invention is However, the present invention is not limited to this. Multiple pieces of information may be presented by superimposing them on the displayed image. For example, as shown in FIG. In 8C, when the neuron values ​​of "fun" and "surprise" exceed the threshold Th1, For example, one of the information 91 and the information 94 can be displayed. The above can be presented.

[0133] As described above, a key with a facial expression that reflects the estimated user's emotion can be generated. By presenting the character to the user, the user can recognize their own emotions and become immersed. Or the user can become aware of emotions that they are not aware of. In this case, we will use the character's facial expressions to present emotional information to the user. However, this is not limited to this method, and any image that visualizes the type and degree of emotion can be used. A variety of images can be used.

[0134] <Example of chassis configuration> In the electronic device according to one aspect of the present invention, the housing 11 has a space 41 positioned at the nose of the user. The configuration and shape of the portion other than the space 41 are not particularly limited as long as they have the space.

[0135] The housing 11 can be configured by connecting a plurality of housings. 22A, 22B, 22C, 23A and 23B.

[0136] FIG. 22A shows an example in which the housing 11 has a first part 11a to a fifth part 11e. FIG. 22A shows the first portion 12a to the fifth portion 12e shown in FIGS. 4A to 4C. indicate the configurations corresponding to the first part 11a to the fifth part 11e, respectively. The first part 11a to the fifth part 11e are connected to each other to form the housing 11. In addition, any one or more of the first part 11a to the fifth part 11e can be detached from the housing 11. It may be possible.

[0137] FIG. 22B shows the housing 11 made up of a fourth part 11d, a fifth part 11e, and a sixth part 11f. 22B shows an example having the first portion 12a shown in FIGS. The sixth part 11f is an integral part of the first to third parts 12c. The fourth part 11d, the fifth part 11e and the sixth part 11f are connected to each other to form a housing. 11. Also, the fourth part 11d, the fifth part 11e and the sixth part 11 One or more of the components f may be detachable from the housing 11.

[0138] FIG. 22C shows an example in which the housing 11 has a first part 11a and a seventh part 11g. FIG. 22C shows the second portion 12b to the fifth portion 12e shown in FIGS. 4A to 4C. The seventh part 11g is an integral part of the first part 11a and The seventh part 11g is connected to each other to form the housing 11. The first part 11a and the seventh part 11g may be detachable from the housing 11.

[0139] FIG. 23A shows the housing 11 made up of a second part 11b, a third part 11c, and an eighth part 11d. 23A shows an example having the first portion 12a shown in FIGS. The fourth part 12d and the fifth part 12e are integrated into an eighth part 11h. The second part 11b, the third part 11c, and the eighth part 11h are The second part 11b, the third part 11c and the One or more of the eighth part 11h and the eighth part 11h may be detachable from the housing 11.

[0140] FIG. 23B shows an example in which the housing 11 has a third part 11c and a ninth part 11i. FIG. 23B shows the first portion 12a, the second portion 12b, and the A seventh part 11g in which the fourth part 12d and the fifth part 12e are integrated The third part 11c and the ninth part 11i are connected to each other to form the housing 11. In addition, either the third part 11c or the ninth part 11i is configured as the housing 11. It may be detachable from the

[0141] 22A to 22C, 23A and 23B, for the sake of clarity, Each part is shown separated.

[0142] The housing 11 is constructed by connecting a plurality of parts, and the components provided in the electronic device 10 are For example, the first part 11a can be easily loaded with a component (such as a computing device 19). In the case of the housing 11 having the first to fifth parts 11a to 11e, 11e are loaded with parts, and then the first part 11a to the fifth part 11b are loaded with parts. The first part 11a to the fifth part 11e can be connected to each other. This allows for higher productivity than loading parts directly from the housing 11. By making the components detachable from the housing, for example, parts can be easily replaced in the event of a malfunction.

[0143] The shape of the housing 11 is not particularly limited to the shape shown in FIG. Each of the portions may have a curved surface. An example of the housing 11 having a curved surface is shown in FIG. 24A. The curved surface of the body 11 enhances the design of the electronic device according to one embodiment of the present invention. Furthermore, since the housing 11 has a curved surface and fewer corners, it is possible to This can prevent injuries, and improve the safety of the electronic device according to one embodiment of the present invention.

[0144] The electronic device according to one embodiment of the present invention may have a fixture 25 as shown in FIG. 24B. The fixture 25 allows the housing 11 to be fixed to the user's head. In FIG. 24B, the fastener 25 is shown in a band-like shape, but in one embodiment of the present invention, 24B, one end of the fixture 25 is fixed to the housing 11 by a fastener 27. However, other configurations may be used. For example, a configuration without fasteners 27 may be used. You may do so.

[0145] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0146] (Embodiment 2) In this embodiment, a display device and a light source that can be applied to the electronic device of one embodiment of the present invention will be described. , an imaging device, etc. will be described.

[0147] <Display device configuration example 1> FIG. 1 is a block diagram illustrating a structural example of a display device that can be applied to an electronic device of one embodiment of the present invention. The display device 810 shown in FIG. 25 includes a layer 820 and a layer stacked on the layer 820. The layer 820 includes a gate driver circuit 821 and a source driver circuit 822. Layer 830 has pixels 834, which are matrix elements. The layers 820 and 830 are arranged in a square shape to form a pixel array 833. An interlayer insulator can be provided. Note that the layer 820 may be stacked above the layer 830. good.

[0148] The circuit 840 is electrically connected to the source driver circuit 822. 0 may be electrically connected to other circuits, etc.

[0149] The pixels 834 in the same row are electrically connected to the gate driver circuit 821 via the wiring 831. The pixels 834 in the same column are electrically connected to the source driver circuit 822 via the wiring 832. The wiring 831 functions as a scanning line, and the wiring 832 functions as a data line. It has the function of

[0150] In FIG. 25, the pixels 834 in one row are electrically connected by one wiring 831. The figure shows a configuration in which one column of pixels 834 is electrically connected by one wiring 832. However, one embodiment of the present invention is not limited thereto. For example, when one row of pixels 834 has two or more wirings 83 1, or one column of pixels 834 may be electrically connected by two or more wirings 832. That is, for example, one pixel 834 may be electrically connected by two or more The scanning line may be electrically connected to two or more data lines. In addition, for example, one wiring 831 may be electrically connected to two or more rows of pixels 834. Alternatively, one wiring 832 may be electrically connected to two or more columns of pixels 834. That is, for example, one wiring 831 may be shared by two or more rows of pixels 834, One wiring 832 may be shared by two or more columns of pixels 834 .

[0151] The gate driver circuit 821 generates signals to control the operation of the pixels 834 and The source driver circuit 82 has a function of supplying the signal to the pixel 834 via the source driver circuit 831. 2 has a function of generating an image signal and supplying the signal to a pixel 834 via a wiring 832. The circuit 840 is, for example, a source of an image signal generated by the source driver circuit 822. The function of receiving image data and supplying the received image data to the source driver circuit 822. The circuit 840 also includes a control circuit for generating a start pulse signal, a clock signal, etc. In addition, the circuit 840 functions as a gate driver circuit 821 and a source It may be a circuit having a function that the driver circuit 822 does not have.

[0152] The pixel array 833 receives the image signal supplied to the pixel 834 by the source driver circuit 822. Specifically, the image display device has a function of displaying light of a brightness corresponding to the image signal. An image is displayed on the pixel array 833 by emitting light from the element 834 .

[0153] In FIG. 25, the positional relationship between the layer 820 and the layer 830 is indicated by a dashed line and a hollow circle. The white circle of layer 820 and the white circle of layer 830, which are connected by a dashed line, overlap each other. Similar notations are used in other figures.

[0154] The display device 810 includes a gate driver circuit 821 and a source driver circuit 822 provided on a layer 820. The gate driver circuit 822 has an area overlapping with the pixel array 833. For example, The circuit 821 and the source driver circuit 822 have an area overlapping with the pixel 834. The gate driver circuit 821 and the source driver circuit 822 are connected to the pixel array 833. By stacking the layers so as to have overlapping areas, the frame of the display device 810 can be narrowed. This allows the device to be made smaller.

[0155] The gate driver circuit 821 and the source driver circuit 822 are not clearly separated but overlap each other. The region is referred to as region 823. By having region 823, the gate The area occupied by the driver circuit 821 and the source driver circuit 822 can be reduced. Therefore, even if the area of ​​the pixel array 833 is small, the gate driver circuit 821 The source driver circuit 822 can be provided without protruding from the pixel array 833. Alternatively, the pixel array of the gate driver circuit 821 and the source driver circuit 822 can be The area of ​​the region that does not overlap with the region 833 can be reduced. The frame can be made even narrower than when no such element is provided, and the size can be reduced.

[0156] The circuit 840 can be provided so as not to overlap with the pixel array 833. The pixel array 840 may be provided to have an overlapping area with the pixel array 833 .

[0157] In FIG. 25, a gate driver circuit 821 and a source driver circuit 822 are provided on a layer 820. 8, one pixel array 833 is provided in the layer 830. A plurality of pixel arrays 833 may be provided in the layer 830. Rays may be split.

[0158] FIG. 25 shows a configuration example in which a circuit 840 is provided on the layer 820. 26 shows a modification of the configuration shown in FIG. 8 shows a configuration example of a display device 810 in which a circuit 840 is provided. The constituent elements may be distributed between layer 820 and layer 830 .

[0159] <Configuration example of pixel 834> 27A to 27E show the colors of the pixels 834 provided in the display device 810. As shown in FIG. 27A, a pixel 8 having a function of emitting red light (R) is 34, a pixel 834 having a function of emitting green light (G), and a pixel 835 having a function of emitting blue light (B). The pixel 834 having the function can be provided in the display device of the electronic device which is one embodiment of the present invention. Alternatively, as shown in FIG. 27B, a pixel 834 having a function of emitting cyan (C) light may be used. , a pixel 834 having the function of emitting magenta (M) light, and a pixel 835 having the function of emitting yellow (Y) light. A pixel 834 having such a function may be provided in the display device 810.

[0160] As shown in FIG. 27C, a pixel 834 having a function of emitting red light (R), a pixel 835 having a function of emitting green light (G ) and a pixel 834 having a function of emitting blue light (B). and a pixel 834 having a function of emitting white light (W) is provided in the display device 810. Alternatively, as shown in FIG. 27D, a pixel 83 having a function of emitting red light (R) may be used. 4, a pixel 834 having a function of emitting green light (G), a pixel 835 having a function of emitting blue light (B), The pixel 834 having the function of emitting yellow (Y) light and the pixel 834 having the function of emitting yellow (Y) light are included in the display device 81. Alternatively, as shown in FIG. 27E, a light emitting element for emitting cyan (C) light may be provided. a pixel 834 having a function of emitting magenta (M) light; a pixel 834 having a function of emitting yellow light; Pixel 834 has the function of emitting light (Y) and pixel 835 has the function of emitting white light (W). A pixel 834 having the same structure may be provided in the display device 810.

[0161] As shown in FIGS. 27C and 27E, a pixel 834 having a function of emitting white light (W) is By providing the display device 810 with the LED, the brightness of the displayed image can be increased. As shown in 27D, by increasing the number of colors emitted by pixel 834, intermediate color reproduction is possible. Therefore, the display quality can be improved.

[0162] As shown in FIG. 27F, the display device 810 has a function of emitting red light (R). a pixel 834 having a function of emitting green light (G), a pixel 834 having a function of emitting blue light (B), In addition to the pixel 834 having the function of emitting infrared light (IR), Alternatively, as shown in FIG. 27G, the display device 810 may emit cyan (C) light. pixel 834 having a function of emitting magenta (M) light; 4. In addition to the pixel 834 having the function of emitting yellow (Y) light, The display device 810 may have a pixel 834 having a function. In addition to the pixel 834 shown in FIG. 1, a pixel 834 having a function of emitting white light (W) may be provided. .

[0163] 28A and 28B are circuit diagrams showing examples of the configuration of the pixel 834. The pixel 834 includes a transistor 552, a transistor 554, a capacitor 562, and a light emitting element. and an optical device 572. The light-emitting device 572 may be, for example, an electroluminescent device. The EL device can be applied to a device that uses a sense. Between the pair of electrodes, there is a layer containing a light-emitting compound (hereinafter also referred to as an EL layer). When a potential difference greater than the threshold voltage of the EL device is applied, holes are transported from the anode side to the EL layer. The injected electrons and holes recombine in the EL layer. When combined, the light-emitting material contained in the EL layer emits light.

[0164] EL devices are distinguished by whether the light-emitting material is organic or inorganic. Generally, the former is called an organic EL device, and the latter is called an inorganic EL device.

[0165] When a voltage is applied to an organic EL device, electrons flow from one electrode and electrons flow from the other electrode. Then, the carriers (electrons and holes) are recombined. By combining with the luminescent organic compound, an excited state is formed, and the excited state is converted to the ground state. Due to this mechanism, such a light-emitting device is called a current-excited type. These are called light-emitting devices.

[0166] In addition to the light-emitting compound, the EL layer may contain a material with high hole injection properties and a material with high hole transport properties. materials, hole blocking materials, materials with high electron transport properties, materials with high electron injection properties, or bipolar The layer may contain a highly functional substance (a substance having high electron-transporting and hole-transporting properties), or the like.

[0167] The EL layer can be produced by a variety of methods, including vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating. It can be formed by the following method.

[0168] Inorganic EL devices are classified into dispersed inorganic EL devices and thin-film inorganic EL devices depending on the device structure. Dispersion-type inorganic EL devices are classified into two types: dispersed-type inorganic EL devices, in which particles of luminescent material are dispersed in a binder, and dispersed-type inorganic EL devices. The light-emitting layer has a structure in which the donor level and the acceptor level are interposed. Thin-film inorganic EL devices emit light by donor-acceptor recombination, which utilizes the electron-emitting The optical layer is sandwiched between dielectric layers, which are then sandwiched between electrodes. The light-emitting mechanism is This is a localized emission that utilizes the inner-shell electron transition of a group ion.

[0169] A light-emitting device only requires that at least one of the pair of electrodes is transparent in order to extract light. Then, a transistor and a light-emitting device are formed on the substrate, and the substrate is Top emission structure that extracts light from the top surface, and bottom emission structure that extracts light from the surface on the substrate side Bottom emission structure and dual emission structure that emits light from both sides There are light-emitting devices with a mission structure, and any light-emitting device with an injection structure can be applied. can.

[0170] The same applies to the light-emitting devices other than the light-emitting device 572. The following devices can be used:

[0171] One of the source and the drain of the transistor 552 is electrically connected to the wiring 832. The other of the source and the drain of the transistor 552 is connected to one electrode of the capacitor 562. and the gate of the transistor 554. The electrode of the transistor 552 is electrically connected to the wiring 835a. 831. One of the source and the drain of the transistor 554 is The source or drain of the transistor 554 is electrically connected to the wiring 835a. The other electrode is electrically connected to one electrode of the light-emitting device 572. The other electrode of the wiring 835a is electrically connected to the wiring 835b. The potential VDD is supplied to the wiring 835a and the wiring 835b. has a function as a power supply line.

[0172] In the pixel 834 having the configuration shown in FIG. 28A, the potential supplied to the gate of the transistor 554 The current flowing through the light emitting device 572 is controlled in accordance with the The brightness of the light emitted from 2 is controlled.

[0173] A different configuration from the pixel 834 shown in FIG. 28A is shown in FIG. 28B. In the pixel 834, one of the source and the drain of the transistor 552 is connected to the wiring 832. The other of the source and the drain of the transistor 552 is electrically connected to a capacitor. One electrode of the transistor 562 is electrically connected to the gate of the transistor 554. The gate of the transistor 552 is electrically connected to the wiring 831. One of the source and drain of transistor 4 is electrically connected to wiring 835a. The other of the source and drain of the capacitor 554 is connected to the other electrode of the capacitor element 562 and the light-emitting device. The other electrode of the light-emitting device 572 is electrically connected to The wiring 835a is electrically connected to the wiring 835b. A potential VDD is supplied to the wiring 835a. The potential VSS is supplied to 835b.

[0174] FIG. 29A shows an example of the configuration of a pixel 834, which differs from FIGS. 28A and 28B in that it has a memory. 29A is different from the pixel 834 having the configuration shown in FIG. 1, a transistor 513, a transistor 521, a capacitor 515, a capacitor 517, and The pixel 834 has a light emitting device 572. The pixel 834 also has a wiring 8 that functions as a scanning line. 31, the wiring 831_1 and the wiring 831_2 are electrically connected and function as a data line. The wiring 832 has a function of electrically connecting a wiring 832_1 and a wiring 832_2. do.

[0175] One of the source and the drain of the transistor 511 is electrically connected to the wiring 832_1. The other of the source and the drain of the transistor 511 is connected to one of the capacitors 515. The gate of the transistor 511 is electrically connected to the wiring 831_1. One of the source and drain of the transistor 513 is connected to the wiring 832. The other of the source and drain of the transistor 513 is electrically connected to a capacitor. The gate of the transistor 513 is electrically connected to the other electrode of the element 515. The other electrode of the capacitor 515 is electrically connected to the line 831_2. One electrode of the capacitor 517 is electrically connected to one electrode of the transistor 518. The source or drain of the transistor 521 is electrically connected to the gate of the transistor 521. One of the electrodes of the capacitor 517 is electrically connected to one of the electrodes of the light-emitting device 572. The other electrode of the transistor 521 is electrically connected to a wiring 535. The other of the drains is electrically connected to the wiring 537. The electrode is electrically connected to a wiring 539 .

[0176] In this specification, the voltage supplied to a light-emitting device is the voltage applied to one of the light-emitting devices. The difference between the potential applied to the electrode and the potential applied to the other electrode of the light-emitting device. vinegar.

[0177] the other of the source and the drain of the transistor 511 and one electrode of the capacitor 515; The node electrically connected to the source or drain of the transistor 513 is referred to as a node N1. The other electrode of the input terminal, one electrode of the capacitor 517, and the gate of the transistor 521 are electrically connected to each other. The node that is electrically connected to the capacitor element 517 is referred to as node N2. A circuit including a transistor 521 and a light-emitting device 572 is referred to as a circuit 401. do.

[0178] The wiring 535 is a common wiring for, for example, all the pixels 834 provided in the display device 810. In this case, the potential supplied to the wiring 535 is a common potential. In addition, a constant potential can be supplied to the wiring 537 and the wiring 539. A high potential can be supplied to the wiring 7, and a low potential can be supplied to the wiring 539. The line 537 and the wiring 539 function as power supply lines.

[0179] The transistor 521 has a function of controlling the current supplied to the light-emitting device 572 . The capacitor 517 functions as a storage capacitor. The capacitor 517 may be omitted.

[0180] In FIG. 29A, the anode side of the light-emitting device 572 is electrically connected to the transistor 521. However, even if the transistor 521 is electrically connected to the cathode side, In this case, the potential values ​​of the wiring 537 and the wiring 539 can be changed as appropriate. can.

[0181] In the pixel 834, the transistor 511 is turned off to maintain the potential of the node N1. In addition, by turning off the transistor 513, the voltage of the node N2 Furthermore, the transistor 513 is turned off, and the transistor By writing a predetermined potential to the node N1 through the capacitor 511, a capacitance is applied to the node N1 through the capacitor 515. By the capacitance coupling, the potential of the node N2 can be changed according to the change in the potential of the node N1. Cut.

[0182] Here, the transistor 511 and the transistor 513 have a metal oxide film in the channel formation region. A transistor having an oxide (hereinafter also referred to as an OS transistor) can be used. The metal oxide can have a band gap of 2 eV or more, or 2.5 eV or more. Therefore, the OS transistor has a very low leakage current (off-state current) when it is off. Therefore, the transistors 511 and 513 are OS transistors. By applying this, the potentials of the nodes N1 and N2 can be maintained for a long period of time. can.

[0183] As metal oxides, In-M-Zn oxides (element M is aluminum, gallium, or yttrium) Thorium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium Smoke, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum metal oxides such as one or more selected from the group consisting of aluminum, tungsten, magnesium, etc. In particular, the element M may be aluminum, gallium, yttrium, or tin. In addition, metal oxides such as indium oxide, zinc oxide, In-Ga oxide, In-Zn oxide, Ga-Zn oxide, or gallium oxide may also be used.

[0184] [Example of how pixel 834 operates] Next, an example of an operation method of the pixel 834 having the configuration shown in FIG. 29A will be described with reference to FIG. 29B. FIG. 29B is a timing chart showing the operation of the pixel 834 having the configuration shown in FIG. 29A. For ease of explanation, various resistors such as wiring resistors, transistors, and wiring The influence of parasitic capacitance of lines, etc., and threshold voltage of transistors, etc. is not taken into consideration.

[0185] In the operation shown in Figure 29B, one frame period is divided into period T1 and period T2. is a period during which a potential is written to the node N2, and period T2 is a period during which a potential is written to the node N1. is.

[0186] During the period T1, the transistors are turned on in both the wiring 831_1 and the wiring 831_2. A fixed potential V ref supplying The wiring 832_2 has a potential V w supply.

[0187] The node N1 is supplied with a potential V ref supplied by The node N2 is supplied with a potential V w Therefore, the potential difference V w -V ref The state is maintained It becomes a state.

[0188] Subsequently, in a period T2, a potential that turns on the transistor 511 is applied to the wiring 831_1. A potential that turns off the transistor 513 is supplied to the wiring 831_2. , the wiring 832_1 is connected to a potential V data is supplied to the wiring 832_2, and a predetermined constant potential is supplied to the wiring 832_3. Note that the potential of the wiring 832_2 may be floating.

[0189] The node N1 is connected to the potential V data is supplied. , the potential V data The potential of the node N2 changes according to That is, the potential V w The potential is the sum of the potential dV and the potential Although dV is shown as a positive value in FIG. 29B, it can be negative. That is, the potential V data is the potential V ref It may be lower.

[0190] Here, the potential dV is roughly determined by the capacitance value of the capacitor 515 and the capacitance value of the circuit 401. When the capacitance of the capacitor 515 is sufficiently larger than the capacitance of the circuit 401, the potential dV is the potential difference V data -V ref The potential is close to

[0191] In this way, pixel 834 combines two types of data signals and supplies them to node N2. Since the image displayed on the pixel array 833 can be generated by the pixel 834, Here, one of the two types of data signals is the image signal mentioned above. The other of the two types of data signals can be, for example, a correction signal. For example, the potential V corresponding to the correction signal during the period T1 w is supplied to node N2, and then in period T2, The potential V corresponding to the signal data to the node N1, the pixel array 833 The image to be displayed can be an image signal corrected by the correction signal. Not only the image signal but also the correction signal etc. are transmitted to the source driver circuit 822 of the display device 810. It can be generated more.

[0192] In the pixel 834 having the configuration shown in FIG. 29A, the potential of the node N2 is connected to the wiring 832_1 and the wiring 8 32_2. Specifically, for example, the potential of the wiring 537 can be increased. Therefore, when the light-emitting device 572 is an organic EL device, The optical device can be configured as a tandem structure, which will be described later. Therefore, the current efficiency and external quantum efficiency of the display device 810 can be improved. In addition, the power consumption of the display device 810 can be reduced. do.

[0193] It should be noted that the circuit is not limited to the example shown in FIG. 29A, and may be a circuit in which transistors, capacitance elements, etc. are added. For example, one transistor and one capacitor may be added to the configuration shown in FIG. By adding this, the number of nodes that can hold potential can be increased to three. In addition to the nodes N1 and N2, there is one more node that can hold a potential. This can further increase the potential of the node N2. Therefore, a larger current can be passed through the light-emitting device 572. can.

[0194] 30A to 30E are diagrams showing configuration examples of the circuit 401 that are different from those shown in FIG. 30A includes a capacitance element similar to the circuit 401 shown in FIG. 517, a transistor 521, and a light emitting device 572.

[0195] In the circuit 401 having the configuration shown in FIG. 30A, the gate of the transistor 521 is connected to the node N2. The gate of the transistor 521 and one electrode of the capacitor 517 are electrically connected to each other. One of the source and the drain of the transistor 5 is electrically connected to the wiring 537. The other of the source and drain of the capacitor 517 is electrically connected to the other electrode of the capacitor 517. The other electrode of the capacitor 517 is electrically connected to one electrode of the light-emitting device 572. The other electrode of the light-emitting device 572 is electrically connected to the wiring 539. .

[0196] The circuit 401 having the configuration shown in FIG. 30B also has a capacitance similar to that of the circuit 401 having the configuration shown in FIG. It includes an element 517 , a transistor 521 , and a light emitting device 572 .

[0197] In the circuit 401 having the configuration shown in FIG. 30B, the node N2 is connected to the gate of the transistor 521. The gate and one electrode of the capacitor 517 are electrically connected to each other. One of the electrodes is electrically connected to the wiring 537. The electrode is electrically connected to one of the source and drain of the transistor 521. The other of the source and drain of the transistor 521 is electrically connected to the other electrode of the capacitor 517. The other electrode of the capacitor 517 is electrically connected to a wiring 539. .

[0198] FIG. 30C shows a circuit diagram when a transistor 525 is added to the circuit 401 shown in FIG. 30A. 4 shows an example of the configuration of the transistor 401. One of the source and drain of the transistor 525 is The other of the source and drain of the transistor 521 and the other electrode of the capacitor 517 are electrically connected to each other. The other of the source and drain of the transistor 525 is electrically connected to the light emitting device The gate of the transistor 525 is electrically connected to one electrode of the wiring 572. The wiring 541 is electrically connected to the transistor 525. It functions as a scanning line.

[0199] In the pixel 834 having the circuit 401 configured as shown in FIG. 30C, the potential of the node N2 is Even if the voltage exceeds the threshold voltage of the transistor 521, the transistor 525 must be turned on. Therefore, no current flows through the light emitting device 572. This prevents malfunction of the display device 810. It is possible.

[0200] FIG. 30D shows a circuit in which a transistor 527 is added to the circuit 401 shown in FIG. 30C. 4 shows an example of the configuration of the transistor 401. One of the source and drain of the transistor 527 is The transistor 521 is electrically connected to the other of the source and drain. The other of the source and drain of the transistor 527 is electrically connected to a wiring 543. The gate of the transistor 527 is electrically connected to the wiring 545. It functions as a scanning line that controls the conduction of the scan line 527.

[0201] The wiring 543 can be electrically connected to a supply source of a specific potential such as a reference potential. That is, the wiring 543 functions as a power supply line. By supplying a specific potential to the other of the source or drain of the Writing can be stabilized.

[0202] The wiring 543 can be electrically connected to the circuit 520. The circuit 520 can be A source of potential, a function for obtaining the electrical characteristics of the transistor 521, and a function for generating a correction signal It can have one or more of the following functions.

[0203] The circuit 401 shown in FIG. 30E includes a capacitor 517, a transistor 521, and a transistor The light emitting device 572 includes a transistor 529 and a light emitting device 572 .

[0204] In the circuit 401 having the configuration shown in FIG. 30E, the gate of the transistor 521 is connected to the node N2. The gate of the transistor 521 and one electrode of the capacitor 517 are electrically connected to each other. One of the source and the drain of the transistor 5 is electrically connected to the wiring 537. One of the source and drain of the transistor 29 is electrically connected to a wiring 543 .

[0205] The other electrode of the capacitor 517 is electrically connected to the other of the source and drain of the transistor 521. The other of the source and drain of the transistor 521 is electrically connected to the The transistor 529 is electrically connected to the other of the source and drain of the transistor 529. The other of the source and drain is electrically connected to one electrode of the light-emitting device 572. do.

[0206] The gate of the transistor 529 is electrically connected to the wiring 831_1. The other electrode of the chair 572 is electrically connected to the wiring 539 .

[0207] <Configuration example 2 of the display device> FIG. 31 shows an example of the configuration of a display device 810 when the pixel 834 has the configuration shown in FIG. 29A. 31 is a block diagram showing the display device 810 having the configuration shown in FIG. In addition to the components of 810, a demultiplexer circuit 824 is provided. The circuitry 824 can be provided, for example, in layer 820, as shown in FIG. The number of multiplexer circuits 824 is determined based on, for example, the number of columns of pixels 834 provided in the pixel array 833. The number can be the same as the number of

[0208] The gate driver circuit 821 is electrically connected to the pixel 834 via a wiring 831-1. The gate driver circuit 821 is electrically connected to the pixel 834 via the wiring 831-2. The wiring 831-1 and the wiring 831-2 function as scanning lines.

[0209] The source driver circuit 822 is electrically connected to the input terminal of the demultiplexer circuit 824. The first output terminal of the demultiplexer circuit 824 is connected to the The second output terminal of the demultiplexer circuit 824 is electrically connected to the pixel 834. The wiring 832-1 and the wiring 832-2 are electrically connected to the pixel 834. The line 832-2 functions as a data line.

[0210] The source driver circuit 822 and the demultiplexer circuit 824 are collectively referred to as a source driver circuit. That is, the demultiplexer circuit 824 may be called a source driver circuit. The signal may be included in the buffer circuit 822.

[0211] In the display device 810 having the configuration shown in FIG. 31, a source driver circuit 822 receives an image signal The demultiplexer circuit 824 has a function of generating the image signal S1 and the image signal S2. 832-1 to supply an image signal S1 to the pixel 834, and 31. Here, the configuration shown in FIG. If the display device 810 is operated in the manner shown in FIG. 29B, the potential V data is the image signal S 1, the potential V w is set to the potential corresponding to the image signal S2. can be done.

[0212] As shown in FIG. 29B, node N2 is connected to a potential V w After supplying the potential V da ta By supplying w +dV”. Here, Thus, the potential dV is the potential V data Therefore, the image signal S2 has a potential corresponding to the image The signal S1 can be added. In other words, the image signal S1 is superimposed on the image signal S2. It is possible.

[0213] Potential V corresponding to image signal S1 data , and the potential V corresponding to the image signal S2 w The size of The length is limited depending on the withstand voltage of the source driver circuit 822. By superimposing the image signal S2, the potential of the source driver circuit 822 can be increased. An image corresponding to an image signal with a higher potential can be displayed on the pixel array 833. This allows a large current to flow through the light emitting device 572, so that a high brightness image can be displayed in pixel array. The image that the pixel array 833 can display can be displayed on the The dynamic range, which is the range of brightness of the image, can be expanded.

[0214] The image corresponding to the image signal S1 and the image corresponding to the image signal S2 may be the same, The image corresponding to the image signal S1 and the image corresponding to the image signal S2 may be different. are the same, the pixel array 833 stores the luminance and pixel values ​​of the image corresponding to the image signal S1. It is possible to display an image with a higher brightness than the image corresponding to the image signal S2.

[0215] FIG. 32 shows an image P1 corresponding to the image signal S1 containing only text, and an image P2 corresponding to the image signal S2 containing only text. In this case, the image P1 and the image P2 overlap. By combining these, the brightness of the text can be increased, for example, to highlight the text. 29B, the node N2 is supplied with a potential V w After being written, node N2 The potential at data Since the potential V corresponding to the image signal S2 changes depending on the w of When rewriting, the potential V of the image signal S1 data You have to rewrite it. side, potential V data When rewriting, the node N2 is As long as the written charge is held without leaking from the transistor 513, etc., the potential V w Therefore, in the case shown in FIG. data Value of By adjusting the brightness of the characters, the brightness of the characters can be adjusted.

[0216] Here, as described above, the potential V corresponding to the image signal S2 w When rewriting the image signal, The potential V corresponding to No. S1data On the other hand, the potential V dat a When rewriting, the potential V w Therefore, image P2 does not need to be rewritten. It is preferable that the image be one that is rewritten less frequently than image 1. In FIG. 32, image P1 is a character Although an example in which image P1 includes only a picture and text and image P2 includes a picture and text has been shown, one aspect of the present invention is not limited to this. stomach.

[0217] <Example of cross-sectional structure of display device> 33 is a cross-sectional view showing a configuration example of a display device 810. The display device 810 includes a substrate 70 The substrate 701 and the substrate 705 are bonded together with a sealing material 712. are.

[0218] The substrate 701 can be a single crystal semiconductor substrate such as a single crystal silicon substrate. Note that the substrate 701 may be a semiconductor substrate other than a single crystal semiconductor substrate.

[0219] The transistor 441 and the transistor 601 are provided on a substrate 701. The transistor 441 can be a transistor provided in the circuit 840. 601 denotes a transistor provided in a gate driver circuit 821 or a source driver circuit. In other words, the transistors 441 and 822 can be transistors provided in the The transistor 601 can be provided in a layer 820 shown in FIG.

[0220] The transistor 441 includes a conductor 443 that functions as a gate electrode and a gate insulating film 444. The insulator 445 functions as a dielectric, and a part of the substrate 701. The semiconductor region 447 includes a region that functions as either a source region or a drain region. The low-resistance region 449a and the low-resistance region 449b functioning as the other of the source region and the drain region The transistor 441 is either a p-channel or n-channel transistor. This is also fine.

[0221] The transistor 441 is electrically isolated from other transistors by an element isolation layer 403. In FIG. 33, the transistor 441 and the transistor 601 are separated by the element isolation layer 403. The element isolation layer 403 is formed by LOCOS (LOCal Oxidation of Silicon (STI) method or Shallow Transition (STI) method The insulating layer can be formed by using a method such as a annealing isolation method.

[0222] Here, the semiconductor region 447 of the transistor 441 shown in FIG. The conductor 443 covers the side and top surfaces of the semiconductor region 447 with the insulator 445 interposed therebetween. 33, the conductor 443 is provided so as to cover the side surface of the semiconductor region 447. The conductor 443 can be made of a material that can adjust the work function. Cut.

[0223] A transistor having a convex semiconductor region such as the transistor 441 is formed by Since the protrusions of the fin transistor are used, it can be called a fin transistor. and an insulator that functions as a mask for forming the protrusions is provided in contact with the upper portion of the 33 shows a configuration in which a part of the substrate 701 is processed to form a convex portion. However, a semiconductor having a convex shape may be formed by processing an SOI substrate.

[0224] Note that the configuration of the transistor 441 shown in FIG. 33 is an example, and the present invention is not limited to this configuration. An appropriate configuration may be used depending on the circuit configuration or the operation method of the circuit. For example, 441 may be a planar transistor.

[0225] The transistor 601 can have a structure similar to that of the transistor 441 .

[0226] On the substrate 701, an element isolation layer 403, a transistor 441, and a transistor 6 In addition to the insulating film 401, an insulator 405, an insulator 407, an insulator 409, and an insulator 411 are provided. Conductors 45 are disposed in the insulators 405, 407, 409, and 411. Here, the height of the upper surface of the conductor 451 and the height of the upper surface of the insulator 411 are can be done to the same extent.

[0227] An insulator 413 and an insulator 415 are provided over the conductor 451 and the insulator 411 . In addition, a conductor 457 is embedded in the insulator 413 and the insulator 415 .

[0228] An insulator 417 and an insulator 419 are provided over the conductor 457 and the insulator 415 . In addition, a conductor 459 is embedded in the insulator 417 and the insulator 419 .

[0229] An insulator 421 and an insulator 214 are provided over the conductor 459 and the insulator 419 . The conductor 453 is embedded in the insulator 421 and the insulator 214. The height of the upper surface of 453 and the height of the upper surface of the insulator 214 can be made to be approximately the same.

[0230] An insulator 216 is provided on the conductor 453 and on the insulator 214. The conductor 455 is buried. Here, the height of the upper surface of the conductor 455 and the height of the insulator 216 are The height of the top surface can be made the same.

[0231] On the conductor 455 and on the insulator 216, the insulator 222, the insulator 224, the insulator 254, Insulator 244, insulator 280, insulator 274, and insulator 281 are provided. 22, Insulator 224, Insulator 254, Insulator 244, Insulator 280, Insulator 2 The conductor 305 is embedded in the insulating material 281 and the insulating material 74. The height of the upper surface can be made approximately the same as the height of the upper surface of the insulator 281.

[0232] An insulator 361 is provided on the conductor 305 and on the insulator 281. The conductor 317 and the conductor 337 are buried. The height of the upper surface of the insulator 361 can be made approximately the same.

[0233] An insulator 363 is provided on the conductor 337 and on the insulator 361. Conductor 347, conductor 353, conductor 355, and conductor 357 are embedded. The height of the upper surfaces of the conductors 353, 355, and 357 and the upper surface of the insulator 363 are The height of the surfaces can be made the same.

[0234] The connection electrode 7 is formed on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. 60 is provided. Anisotropic conductor 78 is provided so as to be electrically connected to connection electrode 760. 0 is provided, and an FPC (Flexible Printed Circuit) is provided so as to be electrically connected to the anisotropic conductor 780. The FPC 716 is provided with a FPC (Fiber Printed Circuit) 716. Various signals and the like are supplied to the display device 810 from outside the display device 810 .

[0235] As shown in FIG. 33, the other of the source region and the drain region of the transistor 441 is The low resistance region 449b having the function of Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 347 , the conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor 78 33. Here, the connecting electrode 76 is electrically connected to the FPC 716 via the connecting electrode 76. Conductor 353 and conductor 347 are conductors having the function of electrically connecting 355 and the conductor 357 are shown, one embodiment of the present invention is not limited to this. There may be one conductor that has the function of electrically connecting the electrode 760 and the conductor 347. The number of the connection electrodes 760 and the conductors 347 may be two, four, or more. By providing a plurality of conductors each having the function of connecting to the .

[0236] A transistor 750 is provided on the insulator 214. The transistor 750 is a 834. That is, the transistor 750 can be The transistor 750 can be provided in the layer 830 shown in FIG. 25. An OS transistor has a feature of having an extremely low off-state current. Therefore, the retention time of image signals etc. can be extended, and the frequency of refresh operations can be reduced. Therefore, the power consumption of the display device 810 can be reduced.

[0237] Insulator 254, insulator 244, insulator 280, insulator 274, and insulator 28 The conductor 301a and the conductor 301b are embedded in the conductive layer 1. The conductor 301b is electrically connected to either the source or the drain of the transistor 750. The transistor 750 is electrically connected to the other of the source and drain. The height of the upper surfaces of the conductive body 301a and the conductive body 301b is approximately equal to the height of the upper surface of the insulator 281. can.

[0238] In the insulator 361, the conductor 311, the conductor 313, the conductor 331, the capacitance element 790, the conductor The conductor 311 and the conductor 313 are buried in the The conductor 333 is electrically connected to the resistor 750 and functions as a wiring. 335 is electrically connected to the capacitor element 790. Here, the conductor 331, the conductor 3 The height of the upper surface of the conductor 335 and the height of the upper surface of the insulator 361 can be made to be approximately the same.

[0239] Conductor 341 , conductor 343 , and conductor 351 are embedded in insulator 363 . Here, the height of the upper surface of the conductor 351 and the height of the upper surface of the insulator 363 can be made to be approximately the same.

[0240] Insulator 405, insulator 407, insulator 409, insulator 411, insulator 413, insulator 4 15, insulator 417, insulator 419, insulator 421, insulator 214, insulator 280, insulation The insulator 274, the insulator 281, the insulator 361, and the insulator 363 function as an interlayer film. In addition, it may also have a function as a planarizing film that covers the underlying uneven shapes. The top surface of the insulator 363 is polished by chemical mechanical polishing (CMP) to improve flatness. l Flattening by flattening process using mechanical polishing method etc. It may be done.

[0241] As shown in FIG. 33, the capacitance element 790 has a lower electrode 321 and an upper electrode 325. In addition, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. That is, the capacitor 790 has an insulator 323 sandwiched between a pair of electrodes, which functions as a dielectric. 33 shows an example in which a capacitor 790 is provided on an insulator 281. 7, the capacitor 790 may be provided over an insulator different from the insulator 281.

[0242] In FIG. 33, the conductor 301a, the conductor 301b, and the conductor 305 are formed in the same layer. In addition, the conductor 311, the conductor 313, the conductor 317, and the lower In this example, the conductor 331 and the conductor 333 are formed in the same layer. 10 shows an example in which the conductor 335 and the conductor 337 are formed in the same layer. In this example, the conductive material 341, the conductive material 343, and the conductive material 347 are formed in the same layer. Furthermore, the conductor 351, the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer. In this way, by forming a plurality of conductors in the same layer, Since the manufacturing process of the display device 810 can be simplified, the display device 810 can be manufactured at a low cost. These may be formed in different layers, and different types may be used. The material may be:

[0243] The display device 810 shown in FIG. 33 includes a light-emitting device 572. The light-emitting device 572 is , a conductor 772, an EL layer 786, and a conductor 788. The conductor 788 is 5 side and functions as a common electrode. , the transistor via the conductor 341, the conductor 331, the conductor 313, and the conductor 301b. The conductor 772 is electrically connected to the other of the source and drain of the conductor 750. The EL layer 786 is formed on the substrate 363 and functions as a pixel electrode. The present invention includes inorganic compounds such as nanotubes, nanotubes, and quantum dots.

[0244] Materials that can be used for the organic compound include fluorescent materials and phosphorescent materials. In addition, materials that can be used for quantum dots include colloidal quantum dot materials, Examples include mold quantum dot materials, core-shell quantum dot materials, and core quantum dot materials. can be.

[0245] In the display device 810 shown in FIG. 33, an insulator 730 is provided on an insulator 363. The insulator 730 can be configured to cover part of the conductor 772. The device 572 has a light-transmitting conductor 788 and is a top-emission type light-emitting device. The light-emitting device 572 can be a bottom emitter that emits light to the conductor 772 side. A mission structure or a dual emitter that emits light to both conductor 772 and conductor 788. A cushion structure may also be used.

[0246] The light emitting device 572 may have a microcavity structure, as will be described in more detail below. This makes it possible to extract light of a predetermined color (for example, RGB) without providing a colored layer. Therefore, the display device 810 can display in color. This makes it possible to suppress the absorption of light by the colored layer. The display device 810 can display a high brightness image and can reduce the power consumption of the display device 810. The EL layer 786 can be formed in an island shape for each pixel or in a stripe shape for each pixel row. That is, even when the layers are formed by separate coating, a configuration may be adopted in which no colored layer is provided.

[0247] The light-shielding layer 738 is provided so as to have a region overlapping with the insulator 730. The light-shielding layer 738 is covered with an insulator 734. The gap between the holes 34 is filled with a sealing layer 732.

[0248] Furthermore, a structure 778 is provided between the insulator 730 and the EL layer 786. A structure 778 is provided between the edge 730 and the insulator 734. The structure 778 is a columnar structure. It is a spacer and has the function of controlling the distance (cell gap) between the substrate 701 and the substrate 705. Note that a spherical spacer may be used as the structure 778.

[0249] On the substrate 705 side, a light-shielding layer 738 and an insulator 734 in contact therewith are provided. The light-shielding layer 738 has a function of blocking light emitted from the adjacent region. has the function of blocking external light from reaching the transistor 750 and the like.

[0250] FIG. 34 is a modification of the display device 810 shown in FIG. 33, and is provided with a colored layer 736. 33. By providing the colored layer 736, the light-emitting device This can improve the color purity of the light extracted from the source 572. 0 can display high-quality images. The device 572 can be a light-emitting device that emits white light, so the EL layer 786 It is not necessary to form the display device 810 by separate coloring, and the display device 810 can have high definition. .

[0251] 33 and 34, the transistor 441 and the transistor 601 are connected to the substrate 701. The transistor 441 and the transistor 442 are provided so as to form a channel formation region therein. Although the structure in which an OS transistor is stacked on the semiconductor substrate 601 is shown, one embodiment of the present invention is 35 shows a modification of FIG. 33, and FIG. 36 shows a modification of FIG. 34. 441 and transistor 601, but transistors 602 and 603 which are OS transistors. The transistor 750 is stacked on the transistor 603. 34. That is, the display device 810 shown in FIGS. The display device 810 includes stacked OS transistors.

[0252] An insulator 613 and an insulator 614 are provided on the substrate 701, and a transistor is provided on the insulator 614. The transistor 602 and the transistor 603 are provided. For example, a transistor or the like may be provided between the substrate 701 and the insulator 6 13, the transistor 441 and the transistor 601 shown in FIGS. 33 and 34 are A transistor having a similar configuration may be provided.

[0253] The transistor 602 may be a transistor provided in the circuit 840. The transistor 603 is a transistor provided in the gate driver circuit 821 or a source driver. The transistors may be provided in the driver circuit 822. The transistor 602 and the transistor 603 can be provided in a layer 820 shown in FIG. , as shown in FIG. 26, when circuit 840 is provided on layer 830, transistor 602 may be provided on layer 830.

[0254] The transistor 602 and the transistor 603 have the same configuration as the transistor 750. The transistors 602 and 603 can be transistors. An OS transistor having a different structure from the transistor 750 may be used.

[0255] The transistor 602 and the transistor 603 are disposed on the insulator 614, and the insulator 616 is disposed on the insulator 614. , insulator 622, insulator 624, insulator 654, insulator 644, insulator 680, insulator 6 74, and insulator 681 are provided. The conductor 461 is embedded in the insulating material 674 and the insulating material 681. The height of the top surface of the conductive body 461 and the height of the top surface of the insulator 681 can be made to be approximately the same.

[0256] An insulator 501 is provided on the conductor 461 and the insulator 681. The conductor 463 is buried. Here, the height of the upper surface of the conductor 463 and the height of the insulator 501 are The height of the top surface can be made the same.

[0257] An insulator 503 is provided on the conductor 463 and the insulator 501. The conductor 465 is buried. Here, the height of the upper surface of the conductor 465 and the height of the insulator 503 are The height of the top surface can be made the same.

[0258] An insulator 505 is provided on the conductor 465 and the insulator 503. 5, a conductor 467 is embedded therein.

[0259] An insulator 507 is provided on the conductor 467 and on the insulator 505. The conductor 469 is buried. Here, the height of the upper surface of the conductor 469 and the height of the insulator 507 are The height of the top surface can be made the same.

[0260] An insulator 509 is provided on the conductor 469 and the insulator 507. 9, a conductor 471 is embedded therein.

[0261] An insulator 421 and an insulator 214 are provided over the conductor 471 and the insulator 509 . The conductor 453 is embedded in the insulator 421 and the insulator 214. The height of the upper surface of 453 and the height of the upper surface of the insulator 214 can be made to be approximately the same.

[0262] As shown in FIGS. 35 and 36, one of the source and drain of the transistor 602 is Conductor 461, Conductor 463, Conductor 465, Conductor 467, Conductor 469, Conductor 47 1, Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 347, the conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductive It is electrically connected to the FPC 716 via the body 780 .

[0263] Insulator 613, insulator 614, insulator 680, insulator 674, insulator 681, insulator 5 01, the insulator 503, the insulator 505, the insulator 507, and the insulator 509 are interlayer films. and may also function as a planarizing film that covers the underlying uneven shapes. stomach.

[0264] By configuring the display device 810 as shown in FIGS. 35 and 36, the display device 810 can be narrowed. While being framed and miniaturized, all the transistors of the display device 810 are OS transistors. This allows, for example, a transistor provided in layer 820 and a transistor provided in layer 83 The transistors provided in the first and second gates can be manufactured using the same device. The manufacturing cost of the display device 810 can be reduced, making the display device 810 inexpensive. It is possible.

[0265] <Example of light-emitting device configuration> 37A to 37E are diagrams showing examples of the configuration of a light-emitting device 572. 7 shows a structure (single structure) in which an EL layer 786 is sandwiched between a conductor 772 and a conductor 788. As mentioned above, the EL layer 786 contains a light-emitting material, for example, an organic compound light-emitting Materials included.

[0266] FIG. 37B is a diagram showing the laminated structure of the EL layer 786. Here, the structure shown in FIG. In light-emitting device 572, conductor 772 functions as an anode, and conductor 788 functions as a cathode. It has the function as.

[0267] The EL layer 786 is formed by stacking a hole injection layer 721, a hole transport layer 722, a light-emitting layer 723, and a conductor 772 thereon. The conductive layer 723, the electron transport layer 724, and the electron injection layer 725 are laminated in this order. When the conductor 772 functions as a cathode and the conductor 788 functions as an anode, , the stacking order is reversed.

[0268] The light-emitting layer 723 has a light-emitting material or a combination of materials, and emits light of a desired color. The light-emitting layer 723 can have a structure in which fluorescent light or phosphorescent light can be emitted. It is also possible to use a laminated structure in which different luminescent colors are emitted. The optical material and other materials may be different materials.

[0269] In the light-emitting device 572, for example, the conductor 772 shown in FIG. 37B is used as a reflective electrode, Conductor 788 is used as a semi-transmissive / semi-reflective electrode, forming a micro-optical resonator (microcavity) structure. By this, light emitted from the light-emitting layer 723 included in the EL layer 786 is resonated between both electrodes. This can intensify the light emitted through the conductor 788.

[0270] The conductor 772 of the light-emitting device 572 is made of a conductive material having reflectivity and a light-transmitting material. When the reflective electrode has a laminated structure with a conductive material (transparent conductive film) that By controlling the film thickness, optical adjustment can be performed. The distance between the electrodes of the conductor 772 and the conductor 788 is mλ / 2, where λ is the wavelength of the light to be obtained. (where m is a natural number)

[0271] In order to amplify the desired light (wavelength: λ) obtained from the light emitting layer 723, The optical distance from the conductor 788 to the region (light emitting region) where desired light is obtained from the light emitting layer is and the optical distance to the region (light emitting region) of the optical layer 723 where the desired light is obtained (2 m It is preferable to adjust the wavelength to be in the vicinity of m'+1)λ / 4 (where m' is a natural number). The light-emitting region here refers to a recombination region of holes and electrons in the light-emitting layer 723. Shows.

[0272] By performing such optical adjustment, the specific monochromatic light spectrum obtained from the light emitting layer 723 can be adjusted. It is possible to narrow the spectrum and obtain light emission with good color purity.

[0273] However, in the above case, the optical distance between the conductor 772 and the conductor 788 is, strictly speaking, 2 to the reflective area of ​​the conductor 788. However, it is difficult to precisely determine the reflection area of ​​the conductor 772 or the conductor 788. Therefore, it is sufficient to assume that any position of the conductor 772 and the conductor 788 is a reflection area. In addition, the conductor 772 and the light emitting element 773 that can obtain the desired light can be obtained. Strictly speaking, the optical distance between the reflective area of ​​the conductor 772 and the light emitting area where the desired light is obtained is However, the conductor 772 is and the light-emitting region in the light-emitting layer from which the desired light is obtained. Therefore, it is difficult to set any position of the conductor 772 as a reflection area, and a light-emitting layer from which desired light can be obtained. The above effect can be fully achieved by assuming any position as a light-emitting area. .

[0274] The light-emitting device 572 shown in FIG. 37B has a microcavity structure, so it has the same E Even if the L layer is included, light of different wavelengths (monochromatic light) can be extracted. There is no need to paint different colors (e.g., RGB) to obtain different luminous colors. This allows for high definition. It is also possible to combine it with a colored layer. Since it is possible to increase the light emission intensity in the front direction, it is possible to reduce power consumption.

[0275] It should be noted that the light-emitting device 572 shown in FIG. 37B does not have a microcavity structure. In this case, the light-emitting layer 723 may be configured to emit white light, and a colored layer may be provided. By this, it is possible to extract light of a predetermined color (for example, RGB). When forming the LED, if different colors are applied to obtain different luminescent colors, the desired color can be obtained without providing a colored layer. It is possible to extract light from

[0276] At least one of the conductor 772 and the conductor 788 is a light-transmitting electrode (a transparent electrode, a semiconductor When the electrode having light transmission is a transparent electrode, the transparent electrode can be The visible light transmittance of the electrode is 40% or more. In the case of a semi-transparent / semi-reflective electrode, the semi-transparent The reflectance of the semi-reflective electrode for visible light is 20% or more and 80% or less, preferably 40% or more and 70% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0277] When the conductor 772 or the conductor 788 is an electrode having reflectivity (a reflective electrode), the reflective The reflectance of the electrode having the property of visible light is 40% or more and 100% or less, preferably 70% or more and 100% or less. 00% or less. The resistivity of this electrode is 1×10 -2 Ωcm or less is preferable.

[0278] The light emitting device 572 may have a configuration as shown in FIG. Two EL layers (EL layer 786a and EL layer 786b) are provided between the substrate 772 and the conductor 788. a stacked structure having a charge generating layer 792 between the EL layer 786a and the EL layer 786b; The light emitting device 572 has a tandem structure. This can increase the current efficiency and external quantum efficiency of the light-emitting device 572. This allows a high-brightness image to be displayed on the display device 810. Here, the EL layer 786a and the EL layer 786b are The EL layer 786 may have the same structure as that of the EL layer 786 shown in FIG.

[0279] The charge generating layer 792 generates a charge when a voltage is applied between the conductor 772 and the conductor 788. Electrons are injected into one of the L layer 786a and the EL layer 786b, and holes are injected into the other. Therefore, the potential of the conductor 772 is higher than the potential of the conductor 788. When a voltage is applied so that the charge generation layer 792 is turned on, electrons are injected into the EL layer 786a. Holes are injected from the charge generating layer 792 into the EL layer 786b.

[0280] In addition, the charge generation layer 792 transmits visible light from the viewpoint of light extraction efficiency (specifically, It is preferable that the visible light transmittance of the charge generation layer 792 is 40% or more. The conductivity of the charge generating layer 792 is lower than the conductivity of the conductor 772 or the conductivity of the conductor 788. That's fine.

[0281] The light emitting device 572 may have a configuration as shown in FIG. Three EL layers (EL layer 786a, EL layer 786b, and EL layer 786c) is provided between EL layer 786a and EL layer 786b and between EL layer 78 7. Tandem light-emitting device 5 having a charge generation layer 792 between EL layer 786b and EL layer 786c. 72. Here, the EL layer 786a, the EL layer 786b, and the EL layer 786c are the same as those in FIG. The light-emitting device 572 can have a configuration similar to that of the EL layer 786 shown in FIG. By adopting the configuration shown in FIG. 1, the current efficiency and external quantum efficiency of the light-emitting device 572 can be further improved. Therefore, an image with higher brightness can be displayed on the display device 810. In addition, the power consumption of the display device 810 can be further reduced.

[0282] The light emitting device 572 may have a configuration as shown in FIG. Between the substrate 772 and the conductor 788, n EL layers (EL layer 786(1) to EL layer 786( n)) are provided, and a charge generation layer 792 is provided between each EL layer 786. 7 shows a light-emitting device 572 having an EL layer 786(1) through an EL layer 786(n). 37E, the EL layer 786 can have the same structure as the EL layer 786 shown in FIG. Among the EL layers 786, the EL layer 786(1), the EL layer 786(m), the EL layer 786(m+1 ), and EL layer 786(n), where m is an integer equal to or greater than 2 and less than n, and n is The larger the value of n, the better the current efficiency and external The quantum efficiency can be improved, and therefore, a high-brightness image can be displayed on the display device 810. In addition, the power consumption of the display device 810 can be reduced.

[0283] <Materials for light-emitting devices> Next, constituent materials that can be used for the light-emitting device 572 will be described.

[0284] <<Conductor 772 and Conductor 788>> The conductor 772 and the conductor 788 may have the following functions as an anode and a cathode. The materials shown in the table below can be used in appropriate combination. For example, metals, alloys, electrically conductive materials, etc. In-Sn oxides and mixtures thereof can be used as appropriate. (also called ITO), In-Si-Sn oxide (also called ITSO), In-Zn oxide , In-W-Zn oxide. Other examples include aluminum (Al), titanium (Ti) , Chromium (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni ), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn) , molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), Gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc. In addition, the above-exemplified metals and alloys containing them in appropriate combination can also be used. Elements belonging to Group 1 or 2 of the Periodic Table (e.g., lithium (Li), cesium) (Cs), calcium (Ca), strontium (Sr), europium (Eu), Rare earth metals such as tterbium (Yb) and alloys containing these in appropriate combinations, and other group Lafene and the like can be used.

[0285] <<Hole Injection Layer 721 and Hole Transport Layer 722>> The hole injection layer 721 is connected to the conductor 772, which is the anode, or the charge generation layer 792 through the EL layer 786. The EL layer 78 is a layer that injects holes into the EL layer 78 and contains a material with high hole injection properties. 6 includes an EL layer 786a, an EL layer 786b, an EL layer 786c, and EL layers 786(1) to 786(6). It is assumed that the EL layer 786(n) is included.

[0286] Materials with high hole injection properties include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples of oxides of transition metals include oxides of tungsten, manganese, and the like. Phthalocyanine compounds, aromatic amine compounds, polymer compounds, etc. can be used. do.

[0287] As materials with high hole injection properties, hole transport materials and acceptor materials (electron acceptor materials) ) can also be used. In this case, the hole transport is performed by the acceptor material. Electrons are extracted from the conductive material, generating holes in the hole injection layer 721. The holes are then transported through the hole transport layer 722. The hole injection layer 721 is made of a hole transporting material and an arsenic compound. It may be formed as a single layer made of a composite material containing an acceptor material (electron-accepting material), The hole transport material and the acceptor material (electron acceptor material) are laminated in separate layers. It may be formed.

[0288] The hole transport layer 722 transports holes injected from the conductor 772 by the hole injection layer 721. The hole transport layer 722 is a layer that transports electrons to the light-emitting layer 723. The hole transport layer 722 is a layer containing a hole transport material. The hole transporting material used for the hole transport layer 722 is particularly It is preferable to use a compound having a HOMO level that is the same as or close to the HOMO level.

[0289] The acceptor material used for the hole injection layer 721 is a material of Group 4 to 5 in the periodic table. Oxides of metals belonging to Group 8 can be used. Specifically, molybdenum oxide, Vanadium, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Among them, molybdenum oxide is particularly stable in the atmosphere and is easily absorbed. It is preferred because it has low moisture resistance and is easy to handle. Other examples include quinodimethane derivatives and chloranil derivatives. Organic acceptors such as hexaazatriphenylene derivatives can be used.

[0290] As the hole transport material used in the hole injection layer 721 and the hole transport layer 722, 10 -6 cm 2 A material having a hole mobility of 1 / Vs or more is preferred. Any other suitable substance may be used.

[0291] As hole transport materials, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives and Indole derivatives and aromatic amine compounds can be preferably used. Examples of the compound include a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, Compounds having a thiophene skeleton and compounds having a furan skeleton can also be used. As the hole transporting material, a polymer compound can also be used.

[0292] However, the hole transport material is not limited to the above, and one or more of various known materials may be used. The hole-transporting material may be used in combination in the hole injection layer 721 and the hole transport layer 722. The hole transport layer 722 may be formed of a plurality of layers. The hole transport layer 722 may be, for example, a stack of a first hole transport layer and a second hole transport layer. good.

[0293] <<Light-emitting layer 723>> The light-emitting layer 723 is a layer containing a light-emitting substance. A substance that emits light of a color such as red, green, yellow-green, yellow, orange, or red is appropriately used. 37C, 37D, and (E), when the light-emitting device 572 has multiple EL layers, In this case, by using different light-emitting materials for the light-emitting layers 723 provided in the respective EL layers, A configuration that exhibits different luminous colors (for example, white obtained by combining luminous colors that are complementary colors) For example, the light-emitting device 572 may have the configuration shown in FIG. In this case, the luminescent material used in the luminescent layer 723 provided in the EL layer 786a and the luminescent material used in the EL layer 786 b) and the luminescent material used in the luminescent layer 723 provided in the EL layer The luminescent color of the EL layer 786a can be made different from the luminescent color of the EL layer 786b. It is to be noted that one light-emitting layer may have a laminated structure containing different light-emitting materials.

[0294] The light-emitting layer 723 contains one or more organic compounds (phosphatides) in addition to a light-emitting substance (guest material). The organic compound may contain one or more organic compounds (e.g., a support material, an assist material). In this case, one or both of a hole transporting material and an electron transporting material can be used.

[0295] When the light-emitting device 572 has the configuration shown in FIG. 37C, the EL layer 786a and the E A light-emitting material that emits blue light (blue light-emitting material) is used as a guest material in one of the L layers 786b. On the other hand, a substance that emits green light (green luminescent substance) and a substance that emits red light ( This method is preferably used for the emission of a blue luminescent material (blue luminescent layer). This is effective when the light efficiency or life span is inferior to other materials. Green and red luminescent materials are used, which convert doublet excitation energy into luminescence in the visible light region. By using a light-emitting material that converts triplet excitation energy into visible light, RGB This is preferable because it improves the spectral balance.

[0296] The light-emitting material that can be used in the light-emitting layer 723 is not particularly limited, and may be a material that emits singlet excited energy. A luminescent material that converts triplet excitation energy into visible light. A luminescent material that changes the light into light can be used. Examples include:

[0297] Fluorescent materials are luminescent materials that convert singlet excitation energy into light. Examples thereof include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, and the like. Olene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives , dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives Pyrene derivatives, in particular, are luminescent. The pyrene derivative is preferred because it has a high quantum yield. This is a group of compounds that are useful for synthesizing

[0298] As a luminescent material that converts triplet excitation energy into luminescence, for example, a phosphorescent material (phosphor and thermally activated delayed fluorescence (TDF). Examples include TADF (Triaxially Associated Delayed Fluorescence) materials.

[0299] Phosphorescent materials include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. These emit different colors (emission peaks) depending on the substance, so they should be selected appropriately as needed. Select and use.

[0300] It has a blue or green color and the peak wavelength of the emission spectrum is between 450 nm and 570 nm. As a phosphorescent material, for example, an organometallic complex having a 4H-triazole skeleton, a 1H-triazole skeleton, Organometallic complexes having a triazole skeleton, organometallic complexes having an imidazole skeleton, electron-absorbing Examples include organometallic complexes having a phenylpyridine derivative having a linking group as a ligand.

[0301] It is green or yellow and the peak wavelength of the emission spectrum is between 495 nm and 590 nm. As phosphorescent materials, organometallic iridium complexes with pyrimidine skeletons and pyrazine skeletons are known. organometallic iridium complexes having a pyridine skeleton, ... metal complexes and rare earth metal complexes.

[0302] Among the above, those having a pyridine skeleton (particularly a phenylpyridine skeleton) or a pyrimidine skeleton are The organometallic iridium complexes are useful for achieving green chromaticity in one embodiment of the present invention. It is a group of compounds.

[0303] Yellow or red, with a peak wavelength of 570 nm or more and 750 nm or less in the emission spectrum. As a phosphorescent material, for example, an organometallic complex having a pyrimidine skeleton, an organometallic complex having a pyrazine skeleton, These include organometallic complexes with a pyridine skeleton, platinum complexes, and rare earth metal complexes. It can be obtained.

[0304] Among the above, an organometallic iridium complex having a pyrazine skeleton is an example of an embodiment of the present invention. This is a group of compounds that are useful for achieving red chromaticity in the Organometallic iridium complexes containing cyano groups, such as (mCP)2(dpm), are stable. Highly preferred.

[0305] In addition, blue luminescent materials are those with a photoluminescence peak wavelength of 430 nm or more. It is preferable to use a substance with a wavelength of 70 nm or less, more preferably 430 nm or more and 460 nm or less. In addition, as a green luminescent material, the peak wavelength of photoluminescence is 500 nm or more and 540 nm or more. nm or less, more preferably 500 nm to 530 nm. As a luminescent substance, the photoluminescence peak wavelength is 610 nm or more and 680 nm or less, More preferably, a substance having a wavelength of 620 nm or more and 680 nm or less may be used. The emission measurement can be performed on either a solution or a thin film.

[0306] By using such a compound in combination with the microcavity effect, the above-mentioned The color can be achieved at this time, and the semi-transparent color required to achieve the microcavity effect can be achieved. The thickness of the semi-reflective electrode (metal thin film portion) is preferably 20 nm or more and 40 nm or less. Preferably, it is greater than 25 nm and equal to or less than 40 nm. However, if it exceeds 40 nm, the efficiency will decrease. There is a possibility that it will go down.

[0307] The organic compounds (host material, assist material) used in the light-emitting layer 723 are light-emitting materials ( A material with an energy gap larger than that of a non-metallic material is called a Alternatively, a plurality of types may be selected and used. The conductive materials can also be used as a host material or an assist material, respectively.

[0308] When the luminescent material is a fluorescent material, the host material is It is preferable to use an organic compound having a large energy level and a small energy level in the triplet excited state. For example, it is preferable to use an anthracene derivative or a tetracene derivative.

[0309] When the emitting material is a phosphorescent material, the host material is a material that can absorb the triplet excitation energy of the emitting material. (energy difference between the ground state and the triplet excited state) In this case, in addition to zinc and aluminum-based metal complexes, Oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Conductors, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthroline derivatives, In addition to anthroline derivatives, aromatic amines and carbazole derivatives can also be used. .

[0310] When a plurality of organic compounds are used in the light-emitting layer 723, a compound that forms an exciplex is used as a light-emitting material. In this case, various organic compounds are used in appropriate combination. However, to efficiently form an exciplex, a compound that readily accepts holes is required. (hole transport material) and a compound that easily accepts electrons (electron transport material) Specific examples of the hole transporting material and the electron transporting material are as follows: The materials shown in this embodiment mode can be used.

[0311] TADF materials are materials that convert triplet excited states into singlet excited states using a small amount of thermal energy. Upconversion (reverse intersystem crossing) is possible, and light emission (fluorescence) from the singlet excited state is efficiently In addition, the conditions for efficiently obtaining thermally activated delayed fluorescence are three The energy difference between the doublet excitation level and the singlet excitation level is 0 eV or more and 0.2 eV or less, preferably The delayed fluorescence in TADF materials is between 0 eV and 0.1 eV. The light is an emission that has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. The lifespan of -6 seconds or more, preferably 10 -3 More than a second.

[0312] TADF materials include fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include metal-containing porphyrins containing Pd. For example, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin Hematoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-fluoride complex (SnF2(Meso IX)), Tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ether SnF2(Copro III-4Me) Porphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride Complex (SnF2(Etio I)), Octaethylporphyrin-Platinum Chloride Complex (PtC TADF materials include π-electron-rich heteroaromatic rings and A heterocyclic compound having a π-electron deficient heteroaromatic ring can be used. A substance in which a π-type heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is called a π-electron-rich heteroaromatic ring. The donor property of the ring and the acceptor property of the π-electron-deficient heteroaromatic ring are both strengthened, resulting in a singlet excited state. This is particularly preferred because the energy difference between the excited triplet state and the excited triplet state is small.

[0313] When using TADF materials, they can also be used in combination with other organic compounds. .

[0314] <<Electron transport layer 724>> The electron transport layer 724 transports electrons injected from the conductor 788 by the electron injection layer 725. The electron transport layer 724 is a layer that transports electrons to the light-emitting layer 723. The electron transport layer 724 is a layer containing an electron transporting material. The electron transporting material used in the electron transport layer 724 is 1×10 -6 cm 2 / Vs or more A substance having electron mobility is preferred. , and other than these may be used.

[0315] Electron transport materials include quinoline, benzoquinoline, and oxazole ligands. or metal complexes having thiazole ligands, oxadiazole derivatives, triazoles derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, etc. In addition, π-electron deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds can also be used. can.

[0316] The electron transport layer 724 may be a single layer or a stack of two or more layers made of the above-mentioned materials. It may be a structure.

[0317] <<Electron injection layer 725>> The electron injection layer 725 is a layer containing a substance with a high electron injection property. Lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2) , lithium oxide (LiO x ) and the like, alkali metals, alkaline earth metals, or the like Compounds such as erbium fluoride (ErF3) can also be used. Alternatively, an electride may be used for the electron injection layer 725. For example, a mixed oxide of calcium and aluminum is used as an electride. The above-mentioned substance constituting the electron transport layer 724 may be used. You can also be there.

[0318] The electron injection layer 725 is made of a composite material obtained by mixing an organic compound and an electron donor (donor). Such a composite material may be used in which electrons are generated in an organic compound by an electron donor. Therefore, it has excellent electron injection and electron transport properties. It is preferable that the material has excellent electron transport properties. Specifically, for example, the above-mentioned electron transport layer Electron transport materials (metal complexes, heteroaromatic compounds, etc.) used in 724 can be used. The electron donor may be any substance that exhibits electron donating properties to organic compounds. Alkali metals, alkaline earth metals and rare earth metals are preferred, and lithium, cesium, magnesium Examples include nesium, calcium, erbium, and ytterbium. Metal oxides and alkaline earth metal oxides are preferred, and lithium oxide, calcium oxide, barium oxide, etc. Also, Lewis bases such as magnesium oxide can be used. It is also possible to use organic compounds such as tetrathiafulvalene (TTF). can.

[0319] <<Charge generation layer 792>> When a voltage is applied between the conductor 772 and the conductor 788, the charge generating layer 792 generates a charge. Of the two EL layers 786 in contact with the charge generating layer 792, the EL layer closer to the conductor 772 The conductor 788 has a function of injecting electrons into the EL layer 786 and injecting holes into the EL layer 786 on the side closer to the conductor 788. For example, in the light-emitting device 572 having the configuration shown in FIG. 37C, the charge generation layer 792 is The EL layer 786a has a function of injecting electrons into the EL layer 786a and injecting holes into the EL layer 786b. The charge generation layer 792 is made of a hole transport material to which an electron acceptor is added. Alternatively, an electron donor (donor) may be added to the electron transporting material. In addition, both of these structures may be laminated. By forming the green layer 792, the driving of the display device 810 when the EL layer is laminated is The increase in dynamic voltage can be suppressed.

[0320] In the charge generation layer 792, when an electron acceptor is added to a hole transport material , 7,7,8,8-tetracyano-2,3,5,6-tetrafluoro as an electron acceptor Examples include quinodimethane (abbreviation: F4-TCNQ), chloranil, etc. Examples include oxides of metals belonging to groups 4 to 8 of the periodic table. are vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tantalum oxide Examples of suitable oxides include rhenium oxide, manganese oxide, and rhenium oxide.

[0321] In the charge generation layer 792, when an electron donor is added to an electron transporting material , as an electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or an element of the periodic table Metals belonging to Groups 2 and 13 of the above, as well as their oxides and carbonates, can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium ( Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. It is also preferable to use an organic compound such as tetrathianaphthacene as an electron donor. It may also be used as.

[0322] The light-emitting device 572 is fabricated by a vacuum process such as vapor deposition or a spin coating method. In the case of using a deposition method, a solution process such as an ink jet method can be used. Sputtering, ion plating, ion beam deposition, molecular beam deposition, vacuum deposition Physical vapor deposition (PVD) methods such as CVD, or chemical vapor deposition (CVD) methods can be used. The functional layers included in the EL layer of the light-emitting device (hole injection layer, hole transport layer, light-emitting layer, electron transport layer) The layer, electron injection layer, and charge generation layer are formed by deposition (vacuum deposition, etc.), coating (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, etc.), printing Printing methods (inkjet method, screen (stencil printing) method, offset (lithographic printing) method, frame It can be formed by a method such as letterpress printing, gravure printing, microcontact printing, etc. This can be done.

[0323] Note that each functional layer (hole injection layer, The materials for the hole transport layer, light emitting layer, electron transport layer, electron injection layer, and charge generation layer are not limited to the materials mentioned above. Other materials can be combined as long as they fulfill the functions of each layer. As an example, a polymer compound (oligomer, dendrimer, polymer) can be used. -, etc.), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000) Inorganic compounds (quantum dot materials, etc.) can be used. Colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials , core-type quantum dot materials, etc. can be used.

[0324] The display device 810 shown in this embodiment has the same structure as the detection device 17 shown in the first embodiment. The display device 810 can also be applied to the light source shown in the first embodiment. This allows the light sources to be arranged at high density. The device can acquire information about the user of the electronic device with higher accuracy.

[0325] An example of the configuration of an imaging device that can be used in the detection device 17 shown in the first embodiment is shown in FIG. FIG. 38A is a cross-sectional view showing the configuration of an imaging device. As shown in FIG. Between the plate 1001 and the substrate 995, a transistor 1003, a light emitting device 572, a photoelectric converter The coloring layer 993R and the coloring layer 993IR are sandwiched between the coloring device 1010 and the coloring layer 993R. Here, the transistor 1003 can be, for example, an OS transistor. In FIG. 38A, four transistors 1003 are shown.

[0326] An insulator 1002 is provided on a substrate 1001, and a transistor 10 is formed on the insulator 1002. An insulator 1004 is provided on the transistor 1003, and an insulator 1004 is provided on the transistor 1003. An insulator 1005 is provided on the light emitting device 572. and a photoelectric conversion device 1010 are provided, and the light emitting device 572 or the photoelectric conversion device 1010 is provided. The colored layer 993R and the colored layer 993IR are provided so as to have an area overlapping with 010. In FIG. 38A, two light-emitting devices 572 (light-emitting device 572_1, light-emitting device 572_2) are 72_2), and two photoelectric conversion devices 1010 (photoelectric conversion device 1010_1, photoelectric 1003 and 1004), which are different transistors. 38A shows a configuration in which the light emitting devices 572_ A colored layer 993R having a function of transmitting red light is provided so as to have an area overlapping with the colored layer 993R. and a light-emitting device 572_2 having a function of transmitting infrared light. In addition, the photoelectric conversion device 1010 is provided with a colored layer 993IR. A colored layer 993R is provided so as to have an area overlapping with the photoelectric conversion device 1010_ 9 shows a configuration in which a colored layer 993IR is provided so as to have an area overlapping with the colored layer 993IR.

[0327] The photoelectric conversion device 1010 converts light L irradiated from outside the imaging device. ex Receives light and receives light Light L ex It has the function of converting the light into an electrical signal corresponding to the illuminance.

[0328] The light emitting device 572 preferably has the capability of emitting white light and infrared light. As a result, the light emitted from the light emitting device 572_1 passes through the colored layer 993R and becomes red light. The light emitted from the light emitting device 572_2 is emitted to the outside of the imaging device as R. The light passes through the colored layer 993IR and is emitted to the outside of the imaging device as infrared light IR. The red light R and infrared light IR emitted to the outside of the device are reflected by the object and converted into photoelectric conversion data. For example, the imaging device having the configuration shown in FIG. 38A is used in the first embodiment. When applied to the eyeglass-type electronic device shown in the figure, red light R and The reflected light L is emitted from the exis detected by the photoelectric conversion device 1010. It is possible.

[0329] The imaging device has the function of detecting both red light and infrared light, so that the image can be captured by either red light or infrared light. In the case where the imaging device has a function of detecting only one of the lights, for example, The eyes of the user of the electronic device and the surrounding conditions can be detected with high accuracy. Therefore, for example, the facial features of the user of the electronic device of one embodiment of the present invention, such as the facial expression of the user, can be accurately detected. Therefore, the electronic device of one embodiment of the present invention can recognize the degree of fatigue of the user, It can have the function of estimating emotions, etc. with high accuracy.

[0330] Note that in the case where the display device of one embodiment of the present invention includes a photoelectric conversion device, the display device is In this case, the display device may have a structure shown in FIG. a light-emitting device 572 having an area overlapping with a colored layer 993R having a function, and a In addition to the light-emitting device 572 having an area overlapping with the colored layer 993IR having a function of transmitting light, A light-emitting device 572 having an area overlapping with a colored layer having a function of transmitting colored light, and a blue A light-emitting device 572 is provided that has an area overlapping with a colored layer having a function of transmitting light. .

[0331] The conductor 772, the EL layer 786, and the conductor 788 form the light-emitting device 572. The conductor 772, the active layer 1011, and the conductor 788 form a photoelectric conversion device. Here, the transistor 1003 is electrically connected to the conductor 772. is connected to.

[0332] The active layer 1011 is a stack of p-type and n-type semiconductors to form a pn junction. A pin junction is realized by stacking p-type, i-type, and n-type semiconductors. It may have a laminated structure or the like.

[0333] The semiconductor used in the active layer 1011 may be an inorganic semiconductor such as silicon or an organic compound. In particular, organic semiconductor materials can be used to The EL layer 786 and the active layer 1011 of the semiconductor device 572 are formed by the same vacuum deposition method. This is preferable because it makes it easier to use the same manufacturing equipment.

[0334] When an organic semiconductor material is used for the active layer 1011, a fluorescent material is used as an n-type semiconductor material. -ren (e.g. C 60 , C 70 etc.) or their derivatives, etc. In addition, copper (II) phthalocyanine (Cop per(II) phthalocyanine (CuPc) and tetraphenyldibenzo Periflanthene (Tetraphenyldibenzoperiflanthene; The active layer 1011 can be made of an electron-donating organic semiconductor material such as DBP. As a stacked structure of electron-accepting semiconductor material and electron-donating semiconductor material (pn stacked structure) Alternatively, a barrier layer formed by co-evaporating an electron-accepting semiconductor material and an electron-donating semiconductor material may be formed between them. It may also be a laminated structure (pin laminated structure) with a bulk heterostructure layer. In order to suppress dark current when the semiconductor device is not in use, the above pn stack structure or pin stack structure is used. A layer that functions as a hole blocking layer or an electron blocking layer is placed around the periphery (upper or lower) of the structure. A layer that functions as a barrier layer may be provided.

[0335] In the light-emitting device 572, an EL layer 786 is provided on the conductor 772. In the photoelectric conversion device 1010, an active layer 1011 is provided on the conductor 772. Furthermore, a conductor 788 is provided to cover the EL layer 786 and the active layer 1011. As a result, the conductor 788 is connected to the electrode of the light-emitting device 572 and the photoelectric conversion device 101. 0 electrode.

[0336] FIG. 38B is a cross-sectional view illustrating a configuration example of an imaging device of one embodiment of the present invention. The imaging device having the configuration shown in FIG. This differs from the imaging device configured as shown in FIG. 38A in that it does not have a lens.

[0337] When the electronic device of one embodiment of the present invention has an imaging device having the structure illustrated in FIG. 38B, By providing an external light source, the imaging device can detect light emitted from the light source. For example, the imaging device having the configuration shown in FIG. 38B can be used in the eyeglass-type electronic device shown in the first embodiment. If applicable, red light emitted from the light source is projected onto the face of the user of the eyeglass-type electronic device; and infrared light is irradiated and reflected light L ex is detected by the photoelectric conversion device 1010. This can be done.

[0338] When the imaging device included in the electronic device of one embodiment of the present invention has the structure shown in FIG. 38B , The imaging device can be provided with photoelectric conversion devices 1010 at high density.

[0339] The configuration examples exemplified in this embodiment and the corresponding drawings etc. are at least partly The above can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0340] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0341] (Embodiment 3) In this embodiment, a transistor that can be used in a display device according to one embodiment of the present invention will be described. This article explains:

[0342] <Transistor configuration example 1> 39A, 39B, and 39C can be used in a display device according to one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200A and the periphery of the transistor 200A. The pixel array 833, the gate driver circuit 821, the source driver circuit 822, and the like shown in the first embodiment 822 and the transistor 200A is applied to the transistor included in the circuit 840. can be done.

[0343] FIG. 39A is a top view of a transistor 200A. 39B is a cross-sectional view of the transistor 200A taken along line A1-A2 in FIG. 1 is a cross-sectional view of the portion indicated by the dashed line, and is also a cross-sectional view of the transistor 200A in the channel length direction. FIG. 39C is a cross-sectional view of the area indicated by the dashed line A3-A4 in FIG. 39A. 39A is also a cross-sectional view of the transistor 200A in the channel width direction. For clarity of illustration, some elements have been omitted.

[0344] The transistor 200A includes a metal oxide 230a disposed on a substrate (not shown). and a metal oxide 230b disposed on the metal oxide 230a. On the top, conductors 242a and 242b are arranged spaced apart from each other, and conductor 242 a and conductor 242b, and an opening is formed between conductor 242a and conductor 242b. The formed insulator 280, the conductor 260 disposed in the opening, and the metal oxide 230b , conductor 242a, conductor 242b, and insulator 280, and disposed between conductor 260 The insulator 250, the metal oxide 230b, the conductor 242a, the conductor 242b, and the insulator The metal oxide 230c is disposed between the insulator 280 and the insulator 250. As shown in FIGS. 39B and 39C, the upper surface of the conductor 260 is covered with the insulator 250. 254, metal oxide 230c, and insulator 280. In the following, metal oxide 230a, metal oxide 230b, and metal oxide 230c These may be collectively referred to as metal oxide 230. b may be collectively referred to as conductor 242.

[0345] As shown in FIG. 39B, transistor 200A includes conductor 242a and conductor 242b. The side surface of the conductor 260 has a substantially vertical shape. The conductor 242a and the conductor 242b may be arranged on the side of the conductor 242a. The angle between the top and bottom surfaces is 10° to 80°, preferably 30° to 60°. Alternatively, the opposing side surfaces of the conductor 242a and the conductor 242b may have a plurality of surfaces. It's fine.

[0346] As shown in FIGS. 39B and 39C, the insulator 224, the metal oxide 230a, the metal oxide 2 30b, conductor 242a, conductor 242b, metal oxide 230c, and insulator 280. , an insulator 254 is preferably disposed between the insulator 254 and the As shown in FIG. 39C, the side surface of the metal oxide 230c, the top and side surfaces of the conductor 242a, and the conductor The top and side surfaces of the conductive material 242b, the side surfaces of the metal oxide 230a, the side surfaces of the metal oxide 230b, and It is preferable that the insulating layer 224 has an area in contact with the upper surface of the insulating layer 224 .

[0347] In the transistor 200A, a region where a channel is formed (hereinafter, referred to as a channel forming region) ) and in the vicinity thereof, metal oxide 230a, metal oxide 230b, and Although a configuration in which three layers of metal oxide 230c are stacked is shown, the present invention is not limited to this. For example, a two-layer structure of metal oxide 230b and metal oxide 230c, or a four-layer structure The transistor 200A may have a stacked structure of more than one layer. Although 260 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, the conductor 260 may have a single layer structure or a laminated structure of three or more layers. In addition, each of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c is It may have a laminated structure of two or more layers.

[0348] For example, metal oxide 230c may be a first metal oxide and a second metal oxide on the first metal oxide. In the case of a laminated structure made of oxides, the first metal oxide is the same as the metal oxide 230b. The second metal oxide preferably has a composition similar to that of the metal oxide 230a. I wish.

[0349] Here, the conductor 260 functions as the gate electrode of the transistor, and the conductors 242a and The conductor 242b functions as a source electrode and a drain electrode, respectively. The conductor 260 is sandwiched between the opening of the insulator 280 and the conductors 242a and 242b. The conductor 260, the conductor 242a, and the The placement of the conductor 242b is selected to be self-aligned with the opening of the insulator 280. In the transistor 200A, the gate electrode is disposed between the source electrode and the drain electrode. Therefore, the conductor 260 can be arranged in a self-aligned manner without providing a margin for alignment. Since the transistor 200A can be formed without any gaps, the area occupied by the transistor 200A can be reduced. This allows the display device to have high definition. It can be framed.

[0350] As shown in FIG. 39, the conductor 260 is provided inside the insulator 250. a and a conductor 260b provided so as to be embedded inside the conductor 260a. It is preferable that

[0351] As shown in FIGS. 39A, 39B, and 39C, the transistor 200A is The insulator 214 is disposed on the insulating layer 216. and a conductor 205 disposed so as to be embedded in the insulator 216. an insulator 222 disposed on the body 205 and an insulator 224 disposed on the insulator 222; In addition, a metal oxide 230a is disposed on the insulator 224. It is preferable that

[0352] An insulator 274 and an insulator 281 are provided on the transistor 200A, and the insulator 281 functions as an interlayer film. Here, the insulator 274 is preferably arranged between the conductor 260, the insulator 250, The insulating material 254, the metal oxide 230c, and the insulating material 280 may be disposed on the upper surface thereof. preferable.

[0353] The insulators 222, 254, and 274 are made of hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). It is preferable that the insulator 2 has a function of suppressing the diffusion of at least one of the atoms. 22, insulator 254, and insulator 274 are insulators 224, 250, and 274. It is preferable that the hydrogen permeability is lower than that of the insulator 80. It has a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.). For example, the insulator 222 and the insulator 254 are preferably 0, and preferably has lower oxygen permeability than insulator 280.

[0354] Here, the insulator 224, the metal oxide 230, and the insulator 250 are insulator 280 and The insulating material 254 and the insulating material 274 separate the insulating material 281. The metal oxide 224, the metal oxide 230, and the insulator 250 are included in the insulator 280 and the insulator 281. This can prevent impurities such as hydrogen and excess oxygen from being mixed in.

[0355] A conductor 240 (conductor It is preferable that the conductive material 240a and the conductive material 240b are provided. The insulators 241 (insulators 241a and 241b) are in contact with the side surfaces of the conductors 240. That is, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 are provided. An insulator 241 is provided in contact with the inner wall of the opening. A first conductor of the conductor 240 is provided, and a second conductor of the conductor 240 is further provided inside. Here, the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 may be The heights can be made to be approximately the same. The present invention is not limited to this configuration, but may be applied to a configuration in which the second conductor of the conductor 240 is laminated. For example, the conductor 240 may be configured as a single layer or a laminated structure of three or more layers. When the structure has a laminated structure, ordinal numbers are assigned to indicate the order of formation to distinguish them. This may be the case.

[0356] The transistor 200A includes a metal oxide 230 (metal oxide 23 0a, metal oxide 230b, and metal oxide 230c) functioning as oxide semiconductors. It is preferable to use a metal oxide (hereinafter also referred to as an oxide semiconductor). As mentioned above, the metal oxide that will be the channel forming region of the oxide 230 has a band gap of 0.1μm. It is preferable to use one having an energy of 2 eV or more, preferably 2.5 eV or more.

[0357] As shown in FIG. 39B, the metal oxide 230b has a thickness of 100 μm in the region where it does not overlap with the conductor 242. However, the thickness of the conductive material 242a may be thinner than the thickness of the conductive material 242a. When forming the conductor 242b, a part of the upper surface of the metal oxide 230b is removed. On the upper surface of the metal oxide 230b, a conductive film that becomes the conductor 242 is formed. In this case, a region with low resistance may be formed near the interface with the conductive film. A low-resistance conductive layer is located between the conductors 242a and 242b on the upper surface of the metal oxide 230b. By removing the region where the channel is not formed, it is possible to prevent the channel from being formed in the region. Cut.

[0358] According to one embodiment of the present invention, a display device having a small-sized transistor and high resolution can be provided. Alternatively, a display device having a transistor with large on-state current and high luminance can be provided. Alternatively, a display device having a high-speed transistor and a high-speed operation can be provided. Alternatively, a transistor having stable electrical characteristics and high reliability can be provided. Alternatively, a display device having a transistor with low off-state current and low power consumption can be provided. A low force display device can be provided.

[0359] FIG. 1 shows a detailed structure of a transistor 200A that can be used in a display device according to one embodiment of the present invention. This section explains the composition of the system.

[0360] The conductor 205 is formed so as to have an overlapping area with the metal oxide 230 and the conductor 260. In addition, the conductor 205 is preferably embedded in the insulator 216. Here, it is preferable to improve the flatness of the upper surface of the conductor 205. For example, 5. The average surface roughness (Ra) of the upper surface is 1 nm or less, preferably 0.5 nm or less, more preferably This allows the insulator 22 formed on the conductor 205 to be 0.3 nm or less. 4 and improves the crystallinity of the metal oxide 230b and the metal oxide 230c. It is possible.

[0361] Here, the conductor 260 functions as a first gate (also called a top gate) electrode. The conductor 205 may also serve as a second gate (also called a back gate) electrode. In this case, the potential applied to the conductor 205 may be changed to the potential applied to the conductor 260. By changing the voltage independently of the applied voltage, the V th of In particular, by applying a negative potential to the conductor 205, the transistor Star 200A V th By increasing the voltage to more than 0 V, it becomes possible to reduce the off-state current. Therefore, applying a negative potential to the conductor 205 increases the current flow rate of the conductor 26 compared to when no negative potential is applied. 0 is applied to the drain current of the transistor 200A when the potential is 0V. can be done.

[0362] The conductor 205 is preferably formed larger than the channel forming region in the metal oxide 230. In particular, as shown in FIG. 39C, the conductor 205 is formed in the metal oxide 230 in the channel width direction. It is preferable that the metal oxide is also elongated in the region outside the end where the metal oxide intersects with the metal oxide. The conductor 205 and the conductor 26 are formed on the outer side of the side surface of the oxide 230 in the channel width direction. It is preferable that the overlapping with 0 is performed via an insulator.

[0363] With the above configuration, the electric field of the conductor 260 that functions as the first gate electrode Then, the metal oxide 2 is formed by the electric field of the conductor 205 which functions as the second gate electrode. The channel forming region 30 can be electrically surrounded.

[0364] As shown in FIG. 39C, the conductor 205 is extended to function as wiring. However, the present invention is not limited to this, and a conductor that functions as a wiring may be provided under the conductor 205. It may be configured as follows.

[0365] The conductor 205 is made of a conductive material mainly composed of tungsten, copper, or aluminum. Although the conductor 205 is illustrated as a single layer, it may have a laminated structure. For example, a laminate of titanium or titanium nitride and the above conductive material may be used.

[0366] Under the conductor 205, hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules are (N2O, NO, NO2, etc.), and has the function of suppressing the diffusion of impurities such as copper atoms (the above impurities Alternatively, a conductor may be provided that is impervious to oxygen (for example, oxygen atoms, oxygen molecules). The conductive material has a function of suppressing the diffusion of at least one of the oxygen atoms (the oxygen is less likely to permeate). It is preferable to provide a body. The function of suppressing the diffusion of either or both of the above impurities and the above oxygen is referred to as the function of suppressing the diffusion of either or both of the above impurities and the above oxygen. do.

[0367] By providing a conductor having a function of suppressing oxygen diffusion under the conductor 205, It is possible to prevent the conductor 205 from being oxidized and the conductivity from decreasing. Examples of conductive materials having a controlling function include tantalum, tantalum nitride, ruthenium, and It is preferable to use ruthenium oxide or the like. The conductive material may be a single layer or a multilayer.

[0368] The insulator 214 prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. It is preferable that the insulating film has a function as a barrier insulating film that prevents the insulating film from being broken down. The body 214 is composed of hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitric oxide molecules (NO , NO, NO2, etc.), and has the function of suppressing the diffusion of impurities such as copper atoms (the above impurities It is preferable to use an insulating material that is difficult to pass through. It has the function of suppressing the diffusion of at least one of the oxygen molecules (the oxygen is less likely to permeate). It is preferable to use an insulating material.

[0369] For example, the insulator 214 is preferably made of aluminum oxide or silicon nitride. This allows impurities such as water or hydrogen to flow from the substrate side to the transistor rather than the insulator 214. Alternatively, the diffusion of the metal oxides contained in the insulator 224 and the like to the rotor 200A side can be suppressed. This can prevent oxygen from diffusing toward the substrate side from the insulator 214.

[0370] The insulators 216, 280, and 281, which function as interlayer films, are It is preferable that the relative dielectric constant is lower than that of 4. By using a material with a low relative dielectric constant as the interlayer film, The parasitic capacitance between the lines can be reduced. For example, the insulators 216, 280, The insulator 281 may be silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or the like. silicon dioxide doped with fluorine, silicon dioxide doped with carbon, carbon and nitrogen Additive silicon oxide, silicon oxide having vacancies, or the like may be used as appropriate.

[0371] The insulators 222 and 224 function as gate insulators.

[0372] Here, the insulator 224 in contact with the metal oxide 230 can release oxygen by heating. In this specification, the oxygen released by heating may be referred to as excess oxygen. For example, the insulator 224 may be made of silicon oxide, silicon oxynitride, or the like. By providing an insulator containing the metal oxide 230 in contact with the metal oxide 230, oxygen deficiency in the metal oxide 230 can be prevented. This reduces losses and improves the reliability of the transistor 200A.

[0373] Specifically, the insulator 224 is made of an oxide material from which part of the oxygen is released by heating. The oxides that release oxygen by heating are called TDS (Thermal Dissociation Oxygen converted to oxygen atoms in the ion absorption spectroscopy analysis The amount of desorption is 1.0×10 18 atoms / cm 3 or more, preferably 1.0 × 10 19 at oms / cm 3 More preferably, 2.0 × 10 19 atoms / cm 3 or more, or 3.0×10 20 atoms / cm 3 The oxide film is as described above. The surface temperature of the film at this time is 100°C or more and 700°C or less, or 100°C or more and 400°C or less. The lower range is preferred.

[0374] As shown in FIG. 39C, the insulator 224 does not overlap the insulator 254 and the metal oxide 2 The film thickness of the region that does not overlap with 30b may be thinner than the film thickness of the other region. In the region of the body 224, the region that does not overlap with the insulator 254 and the metal oxide 230b The thickness of the film is preferably a thickness that allows sufficient diffusion of the oxygen.

[0375] The insulator 222, like the insulator 214, prevents impurities such as water or hydrogen from traversing from the substrate side. It is preferable that the insulating film has a function as a barrier insulating film that prevents the insulating film from being mixed into the transistor 200A. For example, it is preferable that the insulator 222 has a lower hydrogen permeability than the insulator 224. The insulator 222, the insulator 254, and the insulator 274 form the insulator 224, the metal oxide 23 0 and insulator 250, etc., impurities such as water or hydrogen from the outside are prevented from entering the transistor. This can prevent the heat from entering the rotor 200A.

[0376] Furthermore, the insulator 222 is a material that can be used to diffuse oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulating material has a function of suppressing the diffusion of oxygen (i.e., the oxygen is less likely to permeate). Preferably, the body 222 has a lower oxygen permeability than the insulator 224. The metal oxide 230 has a function of suppressing the diffusion of impurities and oxygen contained in the metal oxide 230. In addition, the conductor 205 is preferably made of an insulator 224. The reaction between the oxygen contained in the metal oxide 230 and the oxygen contained in the metal oxide 230 can be suppressed. .

[0377] The insulator 222 is an oxide of one or both of aluminum and hafnium, which are insulating materials. It is advisable to use an insulator containing oxides of either or both aluminum and hafnium. As the insulator to be contained, it is preferable to use aluminum oxide or hafnium oxide. Oxides containing aluminum and hafnium (hafnium aluminate) can be used. When the insulator 222 is formed using such a material, the insulator 222 is preferably a metal. The release of oxygen from the oxide 230 and the removal of metal oxide 23 from the periphery of the transistor 200A. It functions as a layer that suppresses the intrusion of impurities such as hydrogen into the silicon dioxide film.

[0378] Alternatively, for example, aluminum oxide, bismuth oxide, or germanium oxide may be added to these insulators. Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Alternatively, zirconium oxide may be added to these insulators. Alternatively, these insulators may be nitrided. The edge may be formed by laminating silicon oxide, silicon oxynitride, or silicon nitride.

[0379] The insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, or zinc oxide. lead zirconate titanate (PZT), strontium titanate (SrTiO3 ), or insulators containing so-called high-k materials such as (Ba,Sr)TiO3 (BST) As transistors become smaller and more highly integrated, Thinning of the insulator may cause problems such as leakage current. By using high-k materials as insulators, the physical thickness can be maintained while It is possible to reduce the gate potential during operation.

[0380] The insulator 222 and the insulator 224 may have a stacked structure of two or more layers. In this case, the laminate structure is not limited to the same material, but may be a laminate structure made of different materials. For example, an insulator similar to the insulator 224 may be provided below the insulator 222. .

[0381] The metal oxide 230 is a metal oxide 230a and a metal oxide 23 on the metal oxide 23a. 0b and a metal oxide 230c on the metal oxide 230b. By having the metal oxide 230a below, the structure formed below the metal oxide 230a This can prevent impurities from diffusing from the structure to the metal oxide 230b. By having the metal oxide 230c on the metal oxide 230b, it is possible to obtain a more uniform structure than the metal oxide 230c. It is possible to suppress the diffusion of impurities from the structure formed above into the metal oxide 230b. Cut.

[0382] The metal oxide 230 has a laminated structure of a plurality of oxide layers with different atomic ratios of each metal atom. Specifically, the metal oxide used for the metal oxide 230a preferably has the following: , the atomic ratio of element M among the constituent elements is, in the metal oxide used for metal oxide 230b, It is preferable that the atomic ratio of the element M in the constituent elements is larger than that of the element M. In the metal oxide used, the atomic ratio of element M to In is It is preferable that the atomic ratio of element M to In in the metal oxide is larger than that of element M to In. In addition, in the metal oxide used for the metal oxide 230b, the atomic ratio of In to the element M is , from the atomic ratio of In to element M in the metal oxide used for the metal oxide 230a, In addition, the metal oxide 230c is preferably larger than the metal oxide 230a or the metal oxide 230b. Any metal oxide can be used for the object 230b.

[0383] The metal oxide 230a, the metal oxide 230b, and the metal oxide 230c have crystallinity. It is preferable to use CAAC-OS (c-axis aligned crystals). It is preferable to use an alloy oxide semiconductor. Crystalline oxides such as AAC-OS have few impurities and defects (oxygen vacancies, etc.) and are crystalline. Therefore, the metal This can suppress the extraction of oxygen from the oxide 230b. Even if the oxygen concentration is increased, it is possible to prevent oxygen from being extracted from the metal oxide 230b. Therefore, the transistor 200A can withstand high temperatures during the manufacturing process (so-called thermal budget). It is stable against

[0384] The energy of the conduction band minimum of the metal oxide 230a and the metal oxide 230c is It is preferable that the energy level is higher than the energy level of the bottom of the conduction band of 230b. The electron affinity of the metal oxide 230a and the metal oxide 230c is smaller than that of the metal oxide 230b. In this case, the metal oxide 230c is preferably smaller than the affinity of the metal oxide 230. It is preferable to use a metal oxide that can be used for a. Specifically, metal oxide 2 In the metal oxide used in 30c, the atomic ratio of element M in the constituent elements is It is preferable that the atomic ratio of the element M in the constituent elements in the metal oxide used in Ob is larger than that of the element M. In addition, in the metal oxide used for the metal oxide 230c, the element M relative to In is The atomic ratio of the element M to In in the metal oxide used for the metal oxide 230b is It is preferable that the ratio is larger than the numerical ratio. In the metal oxide used for the metal oxide 230c, the atomic ratio of In to the element M is: It is preferable that the atomic ratio of In to the element M is larger than that of In.

[0385] Here, the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c In other words, the energy level of the conduction band minimum changes smoothly. The conduction band minimum at the junction of 230a, metal oxide 230b, and metal oxide 230c The energy levels can be said to change continuously or to be in a continuous junction. In order to achieve this, the interface between the metal oxide 230a and the metal oxide 230b and the metal oxide 230 When the defect level density of the mixed layer formed at the interface between b and the metal oxide 230c is reduced, good.

[0386] Specifically, the metal oxide 230a and the metal oxide 230b, the metal oxide 230b and the metal oxide The oxide 230c has a common element other than oxygen (as a main component), so that the defect level density For example, a mixed layer with a low degree of In-Ga-Z In the case of n-oxide, In-Ga-Zn is used as the metal oxide 230a and the metal oxide 230c. Oxide, Ga-Zn oxide, gallium oxide, etc. may also be used. For example, a laminated structure of In-Ga-Zn oxide and the In-Ga-Zn oxide may be used. A laminated structure of Ga-Zn oxide on an In-Ga-Zn oxide, or a laminated structure of In-Ga-Zn oxide and the In-Ga A layered structure of gallium oxide on a-Zn oxide can be used. A laminated structure of Ga-Zn oxide and an oxide not containing In is used as the metal oxide 230c. It may also be used.

[0387] Specifically, the metal oxide 230a is composed of In:Ga:Zn=1:3:4 [atomic ratio] or 1:1:0.5 [atomic ratio] of metal oxide may be used. 0b: In:Ga:Zn=4:2:3 [atomic ratio] or 3:1:2 [atomic ratio] The metal oxide 230c may be a metal oxide of In:Ga:Zn=1. :3:4 [atomic ratio], In:Ga:Zn=4:2:3 [atomic ratio], Ga:Zn=2: It is possible to use a metal oxide having an atomic ratio of Ga:Zn=1:1 or an atomic ratio of Ga:Zn=2:5. In addition, as a specific example of a case where the metal oxide 230c has a laminated structure, 2:3 [atomic ratio] and Ga:Zn=2:1 [atomic ratio] layered structure, In:Ga:Zn = 4:2:3 [atomic ratio] and Ga:Zn = 2:5 [atomic ratio], :Zn=4:2:3 [atomic ratio] and gallium oxide.

[0388] At this time, the main carrier path is the metal oxide 230b. By configuring the metal oxide 230a and the metal oxide 230c as described above, The defect level at the interface with metal oxide 230b and the interface between metal oxide 230b and metal oxide 230c Therefore, the influence of interface scattering on carrier conduction is small. As a result, the transistor 200A can have a high on-state current and high frequency characteristics. When the metal oxide 230c has a laminated structure, the metal oxide 230b and the metal In addition to the effect of reducing the defect level density at the interface with the metal oxide 230c, It is expected that the constituent elements of c will be prevented from diffusing to the insulator 250 side. More specifically, the metal oxide 230c has a laminated structure, and an oxide layer containing no In is provided above the laminated structure. By positioning the oxide, it is possible to suppress In that may diffuse to the insulator 250 side. The body 250 acts as a gate insulator, so that when In is diffused, the characteristics of the transistor are Therefore, by forming the metal oxide 230c into a laminated structure, it is possible to obtain a highly reliable It is possible to provide a display device.

[0389] The metal oxide 230 is preferably a metal oxide that functions as an oxide semiconductor. For example, the metal oxide forming the channel region of the metal oxide 230 may be a band gap metal oxide. It is preferable to use a material with a peak voltage of 2 eV or more, preferably 2.5 eV or more. By using a metal oxide with a wide band gap, the off-state current of a transistor can be reduced. By using such a transistor, a display device with low power consumption can be provided. can.

[0390] On the metal oxide 230b, a conductor 24 is formed, which functions as a source electrode and a drain electrode. 2 (conductor 242a and conductor 242b). Aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten Stainless steel, hafnium, vanadium, niobium, manganese, magnesium, zirconium, Selected from the group consisting of lilium, indium, ruthenium, iridium, strontium, and lanthanum. or an alloy containing the above-mentioned metal elements, or a combination of the above-mentioned metal elements. It is preferable to use alloys such as tantalum nitride, titanium nitride, tungsten, Nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing tantalum nitride, titanium nitride, titanium and tantalum nitride, etc. Aluminum nitride, tantalum and aluminum nitride, ruthenium oxide, nitride Ruthenium, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel The material is a conductive material that is resistant to oxidation or that maintains its conductivity even after absorbing oxygen. preferable.

[0391] By providing the conductor 242 so as to be in contact with the metal oxide 230, the metal oxide 230 The oxygen concentration may decrease in the vicinity of the conductor 242. In the vicinity of the conductor 242, the metal contained in the conductor 242 and the component of the metal oxide 230 In such a case, a metal compound layer containing the metal oxide 230 may be formed. The carrier density increases in the region near the current collector 242, and the region becomes a low resistance region.

[0392] Here, the region between the conductor 242a and the conductor 242b overlaps the opening of the insulator 280. As a result, the conductor 260 is formed between the conductor 242a and the conductor 242b. It can be arranged in a consistent manner.

[0393] The insulator 250 functions as a gate insulator. The insulator 250 is preferably arranged in contact with the upper surface of the insulating layer 250. Silicon nitride oxide, silicon nitride, silicon oxide with fluorine, silicon oxide with carbon silicon oxide containing no carbon and nitrogen, silicon oxide containing vacancies, In particular, silicon oxide and silicon oxynitride are stable to heat, This is preferable.

[0394] The insulator 250, like the insulator 224, has an impurity concentration of water or hydrogen in the insulator 250. The thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less. It is preferable that

[0395] A metal oxide may be provided between the insulator 250 and the conductor 260. The metal oxide may be: It is preferable that the insulating material 250 has a function of suppressing oxygen diffusion from the insulating material 250 to the conductor 260. This makes it possible to suppress oxidation of the conductor 260 due to oxygen contained in the insulator 250. do.

[0396] The metal oxide may function as part of the gate insulator. When silicon oxide, silicon oxynitride, or the like is used for the insulator 250, the metal oxide is It is preferable to use metal oxides, which are high-k materials with high dielectric constants. By forming the body as a stacked structure of the insulator 250 and the metal oxide, the transistor 200A Therefore, the transistor can be made stable against heat and have a high relative dielectric constant. While maintaining the physical thickness of the gate insulator, the gate potential applied during transistor operation can be reduced. In addition, the equivalent oxide thickness (E OT) can be made thinner.

[0397] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, selected from tungsten, titanium, tantalum, nickel, germanium, magnesium, etc. Metal oxides containing one or more of the above metals can be used. aluminum oxide, oxide, which is an insulator containing oxides of either or both of aluminum and hafnium Hafnium oxide, or oxide containing aluminum and hafnium (hafnium aluminate ) is preferably used.

[0398] Although the conductor 260 is shown as a two-layer structure in FIG. 39, it may be a single-layer structure or a three-layer structure. The above laminated structure may also be used.

[0399] The conductor 260a is composed of the above-mentioned hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and oxides. Has the function of suppressing the diffusion of impurities such as nitrogen molecules (N2O, NO, NO2, etc.) and copper atoms It is preferable to use a conductor. Alternatively, oxygen (for example, oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the function of suppressing the diffusion of (a) above.

[0400] The conductor 260a has a function of suppressing the diffusion of oxygen, and thus the conductor 260a contained in the insulator 250 The electrical conductor 260b is prevented from being oxidized by oxygen and the electrical conductivity of the electrical conductor 260b is prevented from decreasing. As a conductive material having a function of suppressing the diffusion of oxygen, for example, tantalum It is preferable to use tantalum nitride, ruthenium, ruthenium oxide, or the like.

[0401] The conductor 260b is made of a conductive material mainly composed of tungsten, copper, or aluminum. In addition, the conductor 260 also functions as a wiring, so it is preferable to use a highly conductive material. For example, a material mainly composed of tungsten, copper, or aluminum is preferably used. The conductor 260b may have a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above conductive material may be used.

[0402] As shown in FIGS. 39A and 39C, the area of ​​the metal oxide 230b that does not overlap with the conductor 242 In other words, in the channel forming region of the metal oxide 230, The side surface is covered with the conductor 260. As a result, This makes it easier for the electric field of the conductor 260 having this function to act on the side surface of the metal oxide 230. Therefore, the on-current of the transistor 200A is increased, and the frequency characteristics of the transistor 200A are improved. It can improve the performance.

[0403] The insulator 254, like the insulator 214, is designed to prevent impurities such as water or hydrogen from penetrating the insulator 280 side. It has a function as a barrier insulating film that prevents the inclusion of For example, it is preferable that the insulator 254 has a lower hydrogen permeability than the insulator 224. Furthermore, as shown in FIGS. 39B and 39C, the insulator 254 is preferably made of a metal oxide 230. the side surface of the conductor 242c, the top and side surfaces of the conductor 242a, the top and side surfaces of the conductor 242b, and the metal oxide 23 230a, the side of the metal oxide 230b, and the region in contact with the top surface of the insulator 224. With this configuration, hydrogen contained in the insulator 280 is preferably 242a, conductor 242b, metal oxide 230a, metal oxide 230b, and insulator 22 4 from penetrating into the metal oxide 230 from the top or side surfaces thereof.

[0404] Furthermore, the insulator 254 is a material that can be used to diffuse oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable that the insulating material has a function of suppressing the diffusion of oxygen (i.e., the oxygen is less likely to permeate). Preferably, body 254 has a lower oxygen permeability than insulator 280 or insulator 224 .

[0405] The insulator 254 is preferably formed by sputtering. The insulating film of the insulator 224 is formed by sputtering in an atmosphere containing oxygen. Oxygen can be added to the area adjacent to the body 254. This allows oxygen to be released from the area. Oxygen can be supplied into the metal oxide 230 through the insulator 224. The metal oxide 23 is formed on the surface of the metal oxide 23. 0 to the insulator 280. The metal oxide 230 has a function of suppressing the diffusion of oxygen toward the substrate side. In this way, the channel shape of the metal oxide 230 can be suppressed. This reduces oxygen vacancies in the metal oxide 230 and This can prevent the transistor from becoming normally on.

[0406] The insulator 254 may be, for example, an oxide of one or both of aluminum and hafnium. It is preferable to form an insulator containing aluminum and / or hafnium oxide. Insulators containing aluminum oxide, hafnium oxide, or aluminum and hafnium It is preferable to use an oxide containing hafnium (hafnium aluminate) or the like.

[0407] The insulator 254 has a barrier property against hydrogen, and the insulators 224, 250, and By covering the insulator 254 with the metal oxide 230, the insulator 280 is covered with the insulator 224 and the metal oxide 230. The metal oxide 230 and the insulator 250 separate the transistor 200. Since impurities such as hydrogen can be prevented from entering from the outside of the transistor 200A, The electrical characteristics and reliability can be improved.

[0408] The insulator 280 is connected to the insulator 224, the metal oxide 230, and the conductive layer 240 via the insulator 254. The insulator 280 is formed on the insulating layer 242. For example, the insulating layer 280 may be silicon oxide or silicon oxynitride. silicon nitride oxide, silicon oxide doped with fluorine, silicon oxide doped with carbon, It may contain silicon oxide to which carbon and nitrogen are added, or silicon oxide having vacancies. Silicon oxide and silicon oxynitride are particularly preferred because they are thermally stable. In addition, materials such as silicon oxide, silicon oxynitride, and silicon oxide with pores can be easily heated. This is preferable because it is possible to easily form a region containing oxygen that is released by the reaction.

[0409] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. The top surface of the insulator 280 may be planarized.

[0410] The insulator 274, like the insulator 214, is formed by mixing impurities such as water or hydrogen into the insulator 280. It is preferable that the insulator 274 has a function as a barrier insulating film that suppresses the penetration of oxygen. For example, an insulator that can be used for the insulator 214, the insulator 254, etc. can be used. This can be done.

[0411] It is preferable to provide an insulator 281 that functions as an interlayer film on the insulator 274. The insulator 281 has a reduced concentration of impurities such as water or hydrogen in the film, similar to the insulator 224. It is preferable that

[0412] In the openings formed in the insulators 281, 274, 280, and 254, The conductors 240a and 240b are arranged. The conductors 240a and 240b are The conductors 240a and 240b are provided facing each other with the conductor 260 in between. The height of the insulating member 281 may be flush with the upper surface of the insulating member 281.

[0413] In addition, the inner walls of the openings of the insulators 281, 274, 280, and 254 An insulator 241a is provided adjacent to the first conductor of the conductor 240a, and the first conductor of the conductor 240a is provided adjacent to the side surface of the insulator 241a. A conductor 242a is located on at least a portion of the bottom of the opening, The conductor 240a contacts the conductor 242a. Similarly, the insulator 281, the insulator 274, the insulator An insulator 241b is provided in contact with the inner wall of the opening of the body 280 and the insulator 254. The first conductor of the conductor 240b is formed in contact with the surface. A conductor 242b is located in the other part, and the conductor 240b contacts the conductor 242b.

[0414] The conductors 240a and 240b are made mainly of tungsten, copper, or aluminum. It is preferable to use a conductive material that satisfies the above condition. A laminated structure may also be used.

[0415] When the conductor 240 has a laminated structure, the metal oxide 230a, the metal oxide 230b, the conductor Conductors in contact with the body 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 In the case of the above, a conductor having the function of suppressing the diffusion of impurities such as water or hydrogen can be used. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, or oxide is preferred. It is preferable to use ruthenium dioxide or the like. In addition, it is preferable to suppress the diffusion of impurities such as water or hydrogen. The functional conductive material may be used in a single layer or a multilayer structure. The oxygen added to the insulator 280 is absorbed by the conductors 240a and 240b. Furthermore, impurities such as water or hydrogen can be prevented from entering from the upper layer of the insulator 281. Contamination of the metal oxide 230 through the conductors 240a and 240b is suppressed. It is possible.

[0416] The insulator 241a and the insulator 241b can be used as the insulator 254, for example. The insulators 241a and 241b are in contact with the insulator 254. Therefore, impurities such as water or hydrogen from the insulator 280 and the like can be absorbed into the conductor 240a and the conductor It is possible to prevent the metal oxide 230 from being mixed with the conductive material 240b. The oxygen contained in the insulator 280 is prevented from being absorbed by the conductors 240a and 240b. It can be controlled.

[0417] Although not shown, the upper surface of the conductor 240a and the upper surface of the conductor 240b are in contact with each other as wiring. A functional conductor may be disposed. The conductor that functions as a wiring may be made of tungsten, copper, or It is preferable to use a conductive material containing aluminum as the main component. Alternatively, it may have a laminated structure, for example, a laminate of titanium or titanium nitride and the above conductive material. The conductor may be formed so as to be embedded in an opening provided in the insulator.

[0418] <Transistor configuration example 2> 40A, 40B, and 40C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200B and the periphery of the transistor 200B. The transistor 200B is a modification of the transistor 200A.

[0419] 40A is a top view of the transistor 200B. 40B is a cross-sectional view of transistor 200B. Here, FIG. 40B is a cross-sectional view of transistor 200B along line B1-B2 in FIG. 40A. FIG. 10 is a cross-sectional view of the portion indicated by the dashed line, showing the channel length direction of the transistor 200B. FIG. 40C is a cross-sectional view of the portion indicated by the dashed line B3-B4 in FIG. 40A. 40A is also a cross-sectional view of the transistor 200B in the channel width direction. In the drawings, some elements are omitted for clarity of illustration.

[0420] In the transistor 200B, the conductor 242a and the conductor 242b are formed on the metal oxide 230. c, the insulator 250, and the conductor 260. The transistor 200B can be a transistor with a high on-state current. B can be a transistor that is easy to control.

[0421] The conductor 260 functioning as the gate electrode is made up of a conductor 260a and a conductor on the conductor 260a. The conductor 260a includes hydrogen atoms, hydrogen molecules, water molecules, copper atoms, etc. It is preferable to use a conductive material that has the function of suppressing the diffusion of impurities such as oxygen. Conductive material that has the function of suppressing the diffusion of (for example, at least one of oxygen atoms, oxygen molecules, etc.) It is preferable to use materials.

[0422] The conductor 260a has a function of suppressing the diffusion of oxygen, and therefore the material of the conductor 260b In other words, by having the conductor 260a, the material selectivity can be improved. Oxidation of 0b is suppressed, and a decrease in electrical conductivity can be suppressed.

[0423] The top and side surfaces of the conductor 260, the side surface of the insulator 250, and the side surface of the metal oxide 230c are It is preferable to provide an insulator 254 so as to cover the electrode. The insulator 254 is made of water, hydrogen, or the like. It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities and oxygen.

[0424] By providing the insulator 254, oxidation of the conductor 260 can be suppressed. By providing the insulator 254, impurities such as water and hydrogen contained in the insulator 280 can be absorbed into the transistor 2. This can prevent the spread to 00B.

[0425] <Transistor configuration example 3> 41A, 41B, and 41C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200C and the periphery of the transistor 200C. The transistor 200C is a modification of the transistor 200A.

[0426] FIG. 41A is a top view of the transistor 200C. Also, FIGS. 41B and 41C are 41B is a cross-sectional view of a transistor 200C, where FIG. 41B is a cross-sectional view of one of C1-C2 in FIG. 1 is a cross-sectional view of the portion indicated by the dashed dotted line, and is also a cross-sectional view of the transistor 200C in the channel length direction. FIG. 41C is a cross-sectional view of the area indicated by the dashed line C3-C4 in FIG. 41A. It is also a cross-sectional view of the transistor 200C in the channel width direction. 1, some elements are omitted for clarity of illustration.

[0427] The transistor 200C has an insulator 250 on the metal oxide 230c. 2. A metal oxide 252 is provided on the metal oxide 252. A conductor 260 is provided on the metal oxide 252. An insulator 270 is provided on the insulator 260. An insulator 271 is provided on the insulator 270.

[0428] The metal oxide 252 preferably has a function of suppressing oxygen diffusion. By providing a metal oxide 252 that suppresses the diffusion of oxygen between the conductive material 260 and the conductive material 260, In other words, the amount of oxygen supplied to the metal oxide 230 is reduced. In addition, oxidation of the conductor 260 can be suppressed.

[0429] The metal oxide 252 may function as a part of the gate electrode. For example, The oxide semiconductor that can be used as the metal oxide 230 is used as the metal oxide 252. In this case, the conductor 260 can be formed by sputtering to form a metal film. The electrical resistance of the oxide 252 can be reduced to make it a conductor. The electrode can be called a de Conductor electrode.

[0430] The metal oxide 252 may function as part of the gate insulator. Therefore, the insulator 250 is made of a material with high thermal stability, such as silicon oxide or silicon oxynitride. In this case, the metal oxide 252 is a high-k material with a high dielectric constant. By using such a stacked structure, the transistor 200C can be protected from heat. Therefore, the physical film thickness can be set to 1 / 2 mm. It is possible to reduce the gate potential applied during transistor operation while maintaining the same. This makes it possible to reduce the equivalent oxide thickness (EOT) of the insulator that functions as the gate insulator.

[0431] In the transistor 200C, the metal oxide 252 is shown as a single layer, but it may be a stack of two or more layers. For example, a metal oxide that functions as a part of the gate electrode and a gate insulating film may be used. It may also be provided by laminating a metal oxide that functions as a part of the body.

[0432] The transistor 200C includes a metal oxide 252, which functions as a gate electrode. When it functions as an electrode, it can be used to reduce the influence of the electric field from the conductor 260. The on-state current of the gate insulating layer 200C can be improved. When functioning as an insulator, the physical thickness of the insulator 250 and metal oxide 252 The distance between the conductor 260 and the metal oxide 230 can be maintained. Therefore, the leakage current between the metal oxide 230 and the conductive layer 260 can be suppressed. The transistor 200C has a laminated structure of the insulator 250 and the metal oxide 252, The physical distance between the conductor 260 and the metal oxide 230 and the distance between the conductor 260 and the metal oxide The field strength applied to 230 can be easily adjusted.

[0433] Specifically, the metal oxide 252 may be an oxide that can be used for the metal oxide 230. A semiconductor with reduced resistance can be used. Alternatively, hafnium, aluminum, gallium Sodium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, Metal oxide containing one or more metals selected from ruthenium, magnesium, etc. can be used.

[0434] In particular, oxides of aluminum and / or hafnium are used as insulators. Aluminum oxide, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use hafnium aluminate. In particular, hafnium aluminate is a It has higher heat resistance than fluorine, so it is less likely to crystallize during heat treatment in the subsequent process. The metal oxide 252 is not an essential component. It may be designed appropriately depending on the characteristics.

[0435] The insulator 270 is an insulating material having a function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. For example, aluminum oxide or hafnium oxide can be used. This is preferable. The conductor 260 is prevented from being oxidized by oxygen from above the insulator 270. Furthermore, impurities such as water or hydrogen can be prevented from entering from above the insulator 270. Therefore, the conductor 260 and the insulator 250 are used to prevent the metal oxide 230 from being mixed therein. It is possible.

[0436] The insulator 271 functions as a hard mask. When processing 60, the side of the conductor 260 is approximately perpendicular, specifically, the side of the conductor 260 and the substrate The angle formed by the plate surface is 75 degrees or more and 100 degrees or less, preferably 80 degrees or more and 95 degrees or less. This can be done.

[0437] The insulator 271 has a function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. By using an insulating material, the layer may also function as a barrier layer. The edge 270 may not be provided.

[0438] The insulator 271 is used as a hard mask to form the insulator 270, the conductor 260, and the metal oxide 252, insulator 250, and metal oxide 230c are selectively removed. The side surfaces of the metal oxide 230b can be made to be substantially flush with each other, and a part of the surface of the metal oxide 230b can be exposed. do.

[0439] Transistor 200C has regions 243a and 243b on the exposed metal oxide surface of metal oxide 230b. One of the regions 243a and 243b functions as a source region. The other of the region 243a and the region 243b functions as a drain region.

[0440] The regions 243a and 243b are formed by, for example, an ion implantation method or an ion doping method. , plasma immersion ion implantation, or plasma treatment to remove the exposed metal oxide. This can be achieved by introducing impurity elements such as phosphorus or boron into the surface of the substrate 230b. In the embodiments and the like, the term "impurity elements" refers to elements other than the main component elements.

[0441] After exposing a part of the surface of the metal oxide 230b, a metal film is formed, and then a heat treatment is performed. By this, the elements contained in the metal film are diffused into the metal oxide 230b, and the region 243 It is also possible to form regions 243a and 243b.

[0442] The region of the metal oxide 230b into which the impurity element is introduced has a reduced electrical resistivity. Therefore, the regions 243a and 243b may be called "impurity regions" or "low resistance regions." do.

[0443] By using the insulator 271 and / or the conductor 260 as a mask, the regions 243a and The region 243b can be formed in a self-aligned manner. The area 243a and / or the area 243b do not overlap with the conductor 260, thereby reducing the parasitic capacitance. In addition, the channel forming region and the source / drain region (region 243a or region 24 3b), no offset region is formed between the regions 243a and 243b. (Self-aligned) formation increases on-current and reduces threshold voltage , and an improvement in the operating frequency can be realized.

[0444] The transistor 200C includes an insulator 271, an insulator 270, a conductor 260, a metal oxide 2 52, the insulator 250, and the insulator 272 on the side of the metal oxide 230c. 72 is preferably an insulator with a low relative dielectric constant, such as silicon oxide or oxynitride. Silicon, silicon oxynitride, silicon nitride, silicon oxide doped with fluorine, and carbon doped silicon oxide doped with carbon and nitrogen, silicon oxide with vacancies It is preferable that the material is a silicon oxide, a silicon oxynitride, a silicon nitride oxide, or a resin. When silicon or silicon oxide having vacancies is used for the insulator 272, the insulator 27 In addition, silicon oxide and oxynitride are preferable because they can easily form an excess oxygen region in the silicon dioxide. Silicon is preferred because it is thermally stable. Also, the insulator 272 has a function of diffusing oxygen. It is preferable that the compound has the ability to

[0445] In order to further reduce the off-state current, an off-state current is formed between the channel forming region and the source / drain region. An offset region is a region having a high electrical resistivity, and The offset region is a region where the introduction of the impurity element is not performed. This can be achieved by introducing the impurity element described above after the formation of insulator 2. The insulating material 72 also functions as a mask in the same manner as the insulating material 271. That is, the impurity element is not introduced into the region overlapping with the insulator 272, and the electrical resistivity of the region is increased. It can be left as it is.

[0446] Transistor 200C has insulator 272 and insulator 254 on metal oxide 230. The insulator 254 is preferably formed by sputtering. By using this method, an insulator with little impurities such as water or hydrogen can be formed.

[0447] The oxide film formed by sputtering has the function of extracting hydrogen from the target structure. Therefore, when the insulator 254 is formed by a sputtering method, the insulator 254 absorbs hydrogen and water from the metal oxide 230 and the insulator 272. The hydrogen concentration in the metal oxide 230 and the insulator 272 can be reduced.

[0448] <Transistor constituent materials> The constituent materials that can be used for the transistor will be described.

[0449] <<Substrate>> To form transistor 200A, transistor 200B, or transistor 200C, The substrate may be, for example, an insulating substrate, a semiconductor substrate, or a conductive substrate. Examples of the substrate include a glass substrate, a quartz substrate, a sapphire substrate, and a stabilized zirconia substrate. (Yttria-stabilized zirconia substrate, etc.), resin substrate, etc. For example, a semiconductor substrate such as silicon or germanium, or a semiconductor substrate such as silicon carbide or silicon germanium A compound semiconductor consisting of gallium oxide, gallium arsenide, indium phosphide, zinc oxide, and gallium oxide. Furthermore, there are semiconductor substrates having an insulating region inside the semiconductor substrate, for example, For example, there is an SOI (Silicon On Insulator) substrate. Examples of substrates include graphite substrates, metal substrates, alloy substrates, conductive resin substrates, etc. There are also substrates with a conductor or semiconductor on an insulating substrate. A substrate provided with a conductor, a substrate provided with a conductor or an insulator on a semiconductor substrate, a conductive substrate There are substrates on which semiconductors or insulators are provided, or on which elements are provided. The elements provided on the substrate may include a capacitance element, a resistance element, a switch element, There are memory elements, etc.

[0450] A flexible substrate is used as the substrate, and the transistor 200A, the transistor Alternatively, the substrate and the transistor 200B or the transistor 200C may be formed. A peeling layer may be provided between the transistors. Alternatively, after the entire structure is formed, it can be separated from the substrate and used for transferring to another substrate. In this case, the transistor can be transferred to a substrate with poor heat resistance or a flexible substrate.

[0451] <<Insulators>> Insulators include oxides, nitrides, oxynitrides, nitride oxides, and metal oxides that have insulating properties. , metal oxide nitride, metal nitride oxide, etc.

[0452] For example, as transistors become smaller and more highly integrated, the gate insulator becomes thinner. However, problems such as leakage current may occur. By using hk materials, it is possible to reduce the voltage required for transistor operation while maintaining the physical film thickness. On the other hand, by using a material with a low relative dielectric constant for the insulator that functions as the interlayer film, It is possible to reduce the parasitic capacitance between wirings. Therefore, the material should be selected according to the function of the insulator. You can choose the price.

[0453] Insulators with high dielectric constants include gallium oxide, hafnium oxide, zirconium oxide, and aluminum. Oxides containing aluminum and hafnium, oxynitrides containing aluminum and hafnium oxides containing silicon and hafnium, and oxynitrides containing silicon and hafnium hafnium nitrides, or silicon and hafnium nitrides.

[0454] Insulators with low dielectric constants include silicon oxide, silicon oxynitride, silicon nitride oxide, Silicon nitride, fluorine-doped silicon oxide, carbon-doped silicon oxide, carbon and Examples of the material include silicon oxide doped with nitrogen, silicon oxide having pores, and resin.

[0455] A transistor using an oxide semiconductor has the function of suppressing the permeation of impurities such as hydrogen and oxygen. Insulators (insulator 214, insulator 222, insulator 254, insulator 274, etc.) having By enclosing the transistor, the electrical characteristics of the transistor can be stabilized. Examples of insulators that have the function of suppressing oxygen permeation include boron, carbon, nitrogen, and oxygen. silicon, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, gallium , germanium, yttrium, zirconium, lanthanum, neodymium, hafnium, or An insulator containing tantalum may be used in a single layer or a multilayer. Aluminum oxide and magnesium oxide are used as insulators that have the function of suppressing the permeation of substances and oxygen. Nesium, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, acid metal oxides such as lanthanum oxide, neodymium oxide, hafnium oxide, or tantalum oxide; Aluminum, aluminum titanium nitride, titanium nitride, silicon oxynitride, or silicon nitride Metal nitrides such as nitrides can be used.

[0456] The insulator that functions as the gate insulator is an insulator having a region containing oxygen that is desorbed by heating. For example, an oxide silicon dioxide having a region containing oxygen that is released by heating is preferable. By forming a structure in which silicon or silicon oxynitride is in contact with the metal oxide 230, the metal oxide The oxygen deficiency of 230 can be compensated for.

[0457] <<Conductors>> Conductors include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, and titanium. Niobium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium Sodium, zirconium, beryllium, indium, ruthenium, iridium, strontium A metal element selected from the group consisting of ruthenium, lanthanum, etc., or an alloy containing the above-mentioned metal element, or It is preferable to use an alloy or the like that combines metal elements such as tantalum nitride, nitride, etc. titanium dioxide, tungsten, nitrides containing titanium and aluminum, tantalum and aluminum Nitrides containing strontium, ruthenium oxide, ruthenium nitride, and oxides containing strontium and ruthenium It is preferable to use tantalum nitride, lanthanum nitride, or oxide containing lanthanum and nickel. , titanium nitride, nitride containing titanium and aluminum, nitride containing tantalum and aluminum Ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum Oxides containing tungsten and nickel are conductive materials that are resistant to oxidation, or that absorb oxygen but remain conductive. It is also preferable to use polycrystalline silicon containing impurity elements such as phosphorus. The material uses semiconductors with high electrical conductivity, such as nickel silicide, That's fine.

[0458] A plurality of conductors made of the above materials may be stacked. Alternatively, a laminated structure may be used in which a material containing oxygen and a conductive material containing oxygen are combined. a laminated structure combining a material containing the above-mentioned metal element and a conductive material containing nitrogen; In addition, the material containing the metal element, the conductive material containing oxygen, and the conductive material containing nitrogen may be used. A laminated structure may be formed by combining a conductive material containing

[0459] When a metal oxide is used for the channel formation region of a transistor, The conductors that function as electrodes include materials containing the above-mentioned metal elements and conductive materials containing oxygen. In this case, it is preferable to use a laminated structure in which the conductive material containing oxygen is combined. It is preferable to provide a conductive material containing oxygen on the channel formation region side. By doing so, oxygen released from the conductive material is easily supplied to the channel formation region. .

[0460] In particular, the metal oxide in which the channel is formed is used as a conductor that functions as a gate electrode. It is preferable to use a conductive material containing the metal element and oxygen contained in the metal. Conductive materials containing elements such as titanium nitride and tantalum nitride may also be used. A conductive material containing nitrogen may also be used. Indium tin oxide and tungsten oxide may also be used. Indium oxide containing tungsten oxide, indium zinc oxide containing titanium oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, silicon dioxide Silicon-doped indium tin oxide may also be used. The channel can be formed by using such a material. It may be possible to capture hydrogen contained in metal oxides, or to capture hydrogen from the outer insulator, etc. In some cases, it may be possible to capture hydrogen that is mixed in from the

[0461] <<Metal oxides>> The metal oxide preferably contains at least indium or zinc. In addition to these, aluminum, gallium, iridium, It is preferable that the alloy contains tritium, tin, or the like. Also, boron, titanium, iron, nickel, etc. Kel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium One or more selected from the group consisting of tungsten, tantalum, magnesium, etc. It may be included.

[0462] Here, the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. The element M is aluminum, gallium, yttrium, or Tin, etc. Other elements that can be used for element M include boron, titanium, iron, and nickel. , germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium However, the element M is not the same as the element mentioned above. There are cases where it is acceptable to combine multiple elements.

[0463] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). Metal oxides containing nitrogen are sometimes collectively called metal oxynitrides (metal oxynitrides). It may also be called tal oxynitride.

[0464] [Metal oxide structures] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Non-single-crystal oxide semiconductors include CAAC-OS and polycrystalline Oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor) conductor), pseudo-amorphous oxide semiconductor (a-like OS) s-like oxide semiconductor), and amorphous oxide semiconductor, etc. There is.

[0465] [impurities] The effect of each impurity in metal oxides is explained. When alkaline earth metals are contained, defect levels may be formed and carriers may be generated. Therefore, metal oxides containing alkali metals or alkaline earth metals are used as channel-forming The transistors used in the metal oxide layer tend to be normally on. It is preferable to reduce the concentration of alkali metals or alkaline earth metals in the Secondary Ion Mass Spectrometry (SIMS) Concentration of alkali metals or alkaline earth metals in metal oxides obtained by rheometry Degrees, 1 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0466] The hydrogen contained in the metal oxide reacts with the oxygen that bonds with the metal atom to form water. The hydrogen contained in the metal oxide may cause oxygen vacancies in the metal oxide. When hydrogen enters the oxygen vacancy, electrons, which act as carriers, may be generated. Some of the hydrogen bonds with oxygen, which bonds with metal atoms, to generate electrons, which act as carriers. Therefore, transistors using metal oxides containing hydrogen It is easy to have on-state characteristics.

[0467] For this reason, it is preferable that the amount of hydrogen in the metal oxide is reduced as much as possible. is the hydrogen concentration obtained by SIMS in metal oxides, expressed as 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 Less than 5x1 0 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 less than A metal oxide with sufficiently reduced impurities is used for the channel formation region of a transistor. This allows the transistor to have stable electrical characteristics.

[0468] It is preferable to use a thin film with high crystallinity as the metal oxide used as the semiconductor of a transistor. Use of the thin film can improve the stability or reliability of the transistor. The thin film may be, for example, a thin film of a single crystal metal oxide or a thin film of a polycrystalline metal oxide. However, thin films of single crystal metal oxides or thin films of polycrystalline metal oxides are also possible. To form the film on the substrate, a high temperature or laser heating process is required. This increases the cost of the process and also reduces throughput.

[0469] The configuration examples exemplified in this embodiment and the corresponding drawings etc. are at least partly The above can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0470] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0471] : 10: electronic device, 10a: electronic device, 10b: electronic device, 11: housing, 11a: first Part, 11b: second part, 11c: third part, 11d: fourth part, 11e : 5th part, 11f: 6th part, 11g: 7th part, 11h: 8th part , 11i: 9th part, 12a: 1st part, 12b: 2nd part, 12c: 3rd part minutes, 12d: fourth part, 12e: fifth part, 13: display device, 13L: display device, 1 3R: display device, 15L: optical member, 15R: optical member, 17: detection device, 17L: detection device, 17R: detection device, 18: storage device, 19: calculation device, 21: input / output device, 23: Server, 25: Fixture, 27: Fastener, 29: Separator, 31: Electronic equipment, 33: Display Part, 41: Space, 43: Opening, 45: Adjustment mechanism, 53: Feature extraction part, 54: Estimation part, 5 5: Information generation unit, 61: Input layer, 62: Intermediate layer, 63: Output layer, 71: Data, 72: Data Data, 73: Data, 74: Data, 81: Information, 82: Information, 91: Information, 92: Information ,93:Information, 94:Information, 95:Information, 200A:Transistor, 200B:Transistor sta, 200C: transistor, 205: conductor, 214: insulator, 216: insulator, 2 22: insulator, 224: insulator, 230: metal oxide, 230a: metal oxide, 230b :Metal oxide, 230c: Metal oxide, 240: Conductor, 240a: Conductor, 240b: Conductor, 241: Insulator, 241a: Insulator, 241b: Insulator, 242: Conductor, 24 2a: conductor, 242b: conductor, 243a: region, 243b: region, 244: insulator, 250: insulator, 252: metal oxide, 254: insulator, 260: conductor, 260a: conductor Conductor, 260b: Conductor, 270: Insulator, 271: Insulator, 272: Insulator, 274: Insulator, 280: Insulator, 281: Insulator, 301a: Conductor, 301b: Conductor, 30 5: conductor, 311: conductor, 313: conductor, 317: conductor, 321: lower electrode, 3 23: insulator, 325: upper electrode, 331: conductor, 333: conductor, 335: conductor, 337: conductor, 341: conductor, 343: conductor, 347: conductor, 351: conductor, 353: conductor, 355: conductor, 357: conductor, 361: insulator, 363: insulator, 401: Circuit, 403: Element isolation layer, 405: Insulator, 407: Insulator, 409: Insulator , 411: insulator, 413: insulator, 415: insulator, 417: insulator, 419: insulator , 421: insulator, 441: transistor, 443: conductor, 445: insulator, 447: Semiconductor region, 449a: low resistance region, 449b: low resistance region, 451: conductor, 453: Conductor, 455: Conductor, 457: Conductor, 459: Conductor, 461: Conductor, 463: Conductor, 465: Conductor, 467: Conductor, 469: Conductor, 471: Conductor, 501: Insulator, 503: Insulator, 505: Insulator, 507: Insulator, 509: Insulator, 511: Transistor, 513: transistor, 515: capacitor, 517: capacitor, 520: Circuit, 521: transistor, 525: transistor, 527: transistor, 529: Transistor, 535: wiring, 537: wiring, 539: wiring, 541: wiring, 543: wiring Line, 545: wiring, 552: transistor, 554: transistor, 562: capacitance element, 572: Light-emitting device, 572_1: Light-emitting device, 572_2: Light-emitting device, 601 : transistor, 602: transistor, 603: transistor, 613: insulator, 61 4: Insulator, 616: Insulator, 622: Insulator, 624: Insulator, 644: Insulator, 65 4: insulator, 674: insulator, 680: insulator, 681: insulator, 701: substrate, 705 : substrate, 712: sealing material, 716: FPC, 721: hole injection layer, 722: hole transport layer 723: light-emitting layer, 724: electron transport layer, 725: electron injection layer, 730: insulator, 732 : sealing layer, 734: insulator, 736: coloring layer, 738: light-shielding layer, 750: transistor, 760: Connection electrode, 772: Conductor, 778: Structure, 780: Anisotropic conductor, 786: EL layer, 786a: EL layer, 786b: EL layer, 786c: EL layer, 788: Conductor, 7 90: Capacitor element, 792: Charge generation layer, 810: Display device, 820: Layer, 821: Gate Driver circuit, 822: source driver circuit, 823: region, 824: demultiplexer circuit, 830: layer, 831: wiring, 831-1: wiring, 831-2: wiring, 831_1: Wiring, 831_2: Wiring, 832: Wiring, 832-1: Wiring, 832-2: Wiring, 832 _1: wiring, 832_2: wiring, 833: pixel array, 834: pixel, 835a: wiring, 835b: wiring, 840: circuit, 993IR: colored layer, 993R: colored layer, 995: substrate ,1001: Substrate, 1002: Insulator, 1003: Transistor, 1004: Insulator, 1 005: insulator, 1010: photoelectric conversion device, 1010_1: photoelectric conversion device, 10 10_2: Photoelectric conversion device, 1011: Active layer

Claims

[Claim 1] The device includes a detection device, a calculation device, and a housing, the housing has a space at a position that overlaps with the user's nose when the headset is worn by the user, the detection device is located between the housing and the user's nose; the detection device has a function of acquiring user data relating to the emotion of the user and outputting the user data to the calculation device; The computing device is an electronic device having a function of generating display data based on the user data and outputting the display data.

Images