Dresser board manufacturing method, dresser board, and grinding wheel dressing method

Abstract

To provide a method for manufacturing a dresser board capable of solving the problem that the productivity is deteriorated because it is necessary to prepare a dummy wafer of the same quality as a wafer to be ground and dress the condition by grinding the dummy wafer.SOLUTION: The method includes a preparation step of preparing a semiconductor plate 20, a groove forming step of forming a plurality of grooves 100 on one surface 20a of the semiconductor plate 20, and a hard member coating step of coating at least side surfaces of the plurality of grooves 100 with a hard member.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a dresser board for dressing a grinding wheel used to grind semiconductor wafers, a dresser board for dressing a grinding wheel used to grind semiconductor wafers, and a method for dressing a grinding wheel used to grind semiconductor wafers. [Background technology]

[0002] Wafers with multiple devices such as ICs and LSIs formed on the surface and divided along planned dividing lines are thinned by grinding the backside using a grinding machine, and then separated into individual device chips using a dicing machine and laser processing machine. These are then used in electrical equipment such as mobile phones, personal computers, and electrical accessories.

[0003] The grinding device is configured to include a chuck table that holds the wafer, and grinding means that rotatably mounts a grinding wheel that has a circular grinding stone that grinds the wafer held on the chuck table, and can finish the wafer to the desired thickness (see, for example, Patent Documents 1 and 2).

[0004] Furthermore, the grinding end surface of the grinding stone arranged on the grinding wheel becomes clogged and its grinding ability decreases as a result of repeated grinding processes. Therefore, the grinding end surface is dressed periodically or at any time using a dresser board made of hard abrasive grains, including diamond abrasive grains, sintered with a resin bond to restore the grinding ability. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2017-226046 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-142906 Summary of the Invention [Problem to be solved by the invention]

[0006] However, immediately after the above-mentioned dressing, the convex portions of the unevenness constituting the end face of the grinding wheel are sharp and do not conform well to the wafer to be ground. Therefore, it is necessary to prepare a dummy wafer of the same quality as the wafer to be ground and grind this dummy wafer to adjust the condition, which results in a problem of poor productivity.

[0007] The present invention has been made in consideration of the above facts, and its main technical object is to provide a method for manufacturing a dresser board, a dresser board, and a method for dressing a grinding wheel that can solve the problem of poor productivity in the past, whereby the convex parts of the unevenness that make up the end face of a grinding wheel immediately after dressing are sharp and do not fit well with the wafer to be ground, and therefore it is necessary to prepare a dummy wafer of the same quality as the wafer to be ground and grind this dummy wafer to adjust the condition. [Means for solving the problem]

[0008] In order to solve the above-mentioned main technical problem, according to the present invention, there is provided a method for manufacturing a dresser board for dressing a grinding wheel that grinds a semiconductor wafer, the method comprising the steps of: a preparation step for preparing a semiconductor plate; a groove forming step for forming a plurality of grooves on one side of the semiconductor plate; and a hard member coating step for coating at least the side surfaces of the plurality of grooves with a hard member.

[0009] The semiconductor wafer ground by the grinding wheel and the semiconductor plate prepared in the preparation step are preferably made of the same material. The grooves formed in the groove forming step are preferably concentric, radial, or dice-shaped, or a combination thereof. Furthermore, the semiconductor plate prepared in the preparation step is preferably a silicon plate, and the hard member coated in the hard member coating step preferably includes any of SiO2, GaN, SiC, DLC, and polycrystalline diamond.

[0010] Furthermore, the present invention provides a dresser board in which at least the side surfaces of a plurality of grooves formed on one surface of a semiconductor plate are covered with a hard member.

[0011] Furthermore, according to the present invention, there is provided a method for dressing a grinding wheel for grinding a semiconductor wafer, comprising: a holding step of holding the other surface of the above-mentioned dresser board on a chuck table; and a dressing step of bringing the grinding wheel having an annular grinding wheel into contact with the dresser board held on the chuck table to dress the end surface of the grinding wheel with a hard member and condition the end surface of the grinding wheel with an exposed semiconductor plate. [Effects of the Invention]

[0012] The method for manufacturing a dresser board of the present invention comprises a preparation step of preparing a semiconductor plate, a groove forming step of forming multiple grooves on one side of the semiconductor plate, and a hard material coating step of coating at least the side surfaces of the multiple grooves with a hard material. Therefore, by dressing a grinding wheel using a dresser board manufactured by the method for manufacturing a dresser board, the dressing of the end face of the grinding wheel and the conditioning work are carried out continuously in parallel, and after dressing the grinding wheel, it is not necessary to prepare a dummy wafer of the same quality as the wafer to be ground and grind the dummy wafer with the grinding wheel to condition it, thereby eliminating the problem of poor productivity.

[0013] Furthermore, in the dresser board of the present invention, at least the side surfaces of the plurality of grooves formed on one surface of the conductor plate are coated with a hard member. Therefore, by using the dresser board to dress the grinding wheel, the dressing of the end surface of the grinding wheel and the conditioning of the grinding wheel can be carried out continuously and in parallel. After dressing the grinding wheel, it is not necessary to prepare a dummy wafer of the same quality as the wafer to be ground and grind the dummy wafer with the grinding wheel to condition it, thereby eliminating the problem of poor productivity.

[0014] Furthermore, the method for dressing a grinding wheel of the present invention includes a holding step of holding the other surface of the dresser board on a chuck table, and a dressing step of bringing the grinding wheel having annular grinding wheels into contact with the dresser board held on the chuck table to dress the end surface of the grinding wheel with a hard member and conditioning the end surface of the grinding wheel with an exposed semiconductor plate.Therefore, the dressing and conditioning operations of the end surface of the grinding wheel are carried out continuously in parallel, and after dressing the grinding wheel, a dummy wafer of the same quality as the wafer to be ground is prepared and ground with the grinding wheel, eliminating the need to condition the wafer, thereby solving the problem of poor productivity. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 2 is an overall perspective view of a semiconductor plate prepared by a preparation step of the present embodiment. [Figure 2] 1A is a perspective view showing an example of a groove forming step of the present embodiment, and FIG. 1B is a partially enlarged cross-sectional view showing a groove formed by the groove forming step shown in FIG. 1A. [Figure 3] 10(a) is a perspective view showing another example of the groove forming step of the present embodiment, and FIG. 10(b) is a perspective view showing another pattern formed by the groove forming step shown in FIG. [Figure 4] (a) is an enlarged cross-sectional view of a portion of a dresser board formed by the hard member coating process of this embodiment, and (b) is an enlarged cross-sectional view of a portion of the dresser board from which the hard member has been removed from the surface of the dresser board shown in (a). [Figure 5] 1 is an overall perspective view of a grinding apparatus suitable for carrying out the dressing method of the present embodiment. [Figure 6] FIG. 10 is a perspective view showing an example of a holding step of the dressing method of the present embodiment. [Figure 7] 1A is a perspective view showing an embodiment of the dressing step in the dressing method of the present embodiment, and FIG. 1B is an enlarged side view (partially shown in cross section) showing a part of the dressing step shown in FIG. 1A. DETAILED DESCRIPTION OF THE INVENTION

[0016] Below, we will explain a method for manufacturing a dresser board for dressing a grinding wheel used to grind semiconductor wafers, which is constructed based on the present invention, a dresser board suitable for dressing a grinding wheel used to grind semiconductor wafers, and a method for dressing a grinding wheel performed using the dresser board.

[0017] (preparation process) When carrying out the method for manufacturing a dresser board according to this embodiment, a preparation step is carried out to prepare a semiconductor plate 20 as shown in FIG. 1. The illustrated semiconductor plate 20 is a circular wafer with no film or pattern formed on either the front surface 20a or the back surface 20b. The semiconductor plate 20 is made of the same material as the semiconductor wafer 10 to be dressed, which is ground by the grinding wheel 4d in the grinding apparatus 1 shown in FIG. 5 (described in detail later). In this embodiment, since the wafer 10 ground by the grinding wheel 4d of the grinding apparatus 1 is a silicon (Si) wafer, the semiconductor plate 20 is also made of silicon. The semiconductor plate 20 has a diameter of, for example, 200 mm, which is sufficient to be held by the chuck table 3 of the grinding apparatus 1, and a thickness of, for example, 2 mm.

[0018] (Groove formation process) Once the semiconductor plate 20 is prepared, a groove forming step is carried out to form a plurality of grooves on one surface (e.g., the surface 20a) of the semiconductor plate 20. A known method can be used to form the plurality of grooves. The pattern shape formed by the plurality of grooves can be set arbitrarily, for example, concentric, radial, or dice-like, or a combination thereof.

[0019] FIG. 2(a) shows an example in which a plurality of ring-shaped grooves 100 are formed on the surface 20a of the semiconductor plate 20 by a laser processing device 30 (only a part of which is shown) to form a concentric pattern.

[0020] The laser processing device 30 includes a chuck table 32 that holds the semiconductor plate 20, and a laser beam application means 34 that applies a laser beam LB to the semiconductor plate 20 held on the chuck table 32. The laser processing device 30 includes an X-axis moving means (not shown) that moves the chuck table 32 in the X-axis direction indicated by the arrow X in the figure, a Y-axis moving means (not shown) that moves the chuck table 32 in the Y-axis direction indicated by the arrow Y in the figure that is perpendicular to the X-axis direction, and a rotary drive means (not shown) that rotates the chuck table 32.

[0021] The semiconductor plate 20 transported to the laser processing device 30 is placed on the chuck table 32 with the surface 20a facing upward and held by suction. The semiconductor plate 20 held on the chuck table 32 is aligned by an alignment means (not shown) provided in the laser processing device 30, and the center position and the outer periphery position of the semiconductor plate 20 are detected.

[0022] Based on the position information detected by the alignment step described above, the X-axis moving means and Y-axis moving means are operated to position the condenser 36 of the laser beam application means 34 at a predetermined processing start position that is close to the center of the semiconductor plate 20. Then, a laser beam LB having a wavelength that is absorbed by the semiconductor plate 20 is irradiated onto the surface 20a at a predetermined position from the center of the semiconductor plate 20, with the focused point positioned thereon, while the chuck table 32 is rotated in the direction indicated by arrow R1, and ablation processing is performed on the surface 20a of the semiconductor plate 20 to form a ring-shaped groove 100.

[0023] As described above, once the ring-shaped groove 100 has been formed at a predetermined position from the center of the semiconductor plate 20, the semiconductor plate 20 is indexed and moved a predetermined distance in the Y-axis direction, and the focal point of the laser beam LB is positioned at a predetermined distance outside the area of ​​the semiconductor plate 20 where the groove 100 has already been formed, and the laser beam LB is irradiated, while the chuck table 32 is rotated in the direction indicated by arrow R1, to form a concentric groove 100 adjacent to the groove 100 that was initially formed.

[0024] In the same manner as the laser processing described above, the focal points of the laser beam LB are positioned at predetermined intervals outside the area where the grooves 100 are formed in the semiconductor plate 20, and the chuck table 32 is rotated in the direction indicated by the arrow R1, thereby forming a plurality of ring-shaped grooves 100 over the entire surface 20a of the semiconductor plate 20, forming a concentric pattern, as shown in FIG. 2(a).

[0025] As shown in Fig. 2(b), the groove 100 is formed with a depth of 1 mm and a width of 0.5 to 1.0 mm, for example. The interval between adjacent grooves 100 is set to 5 to 10 mm, for example. Note that in Fig. 2(b), for convenience of explanation, the cross-sectional shape of the groove 100 is shown as a regular rectangle, but in reality, it does not necessarily have to be a regular rectangle as shown.

[0026] Figure 3(a) shows an embodiment of a groove forming process in which, instead of forming multiple ring-shaped grooves 100 on the surface 20a of the semiconductor plate 20 using the above-mentioned laser processing device 30, a cutting device 40 (only a portion of which is shown) is used to form multiple straight-line grooves 110 on the surface 20a of the semiconductor plate 20, thereby forming a dice-like pattern.

[0027] The cutting device 40 includes a chuck table 42 that holds the semiconductor plate 20 by suction, and cutting means 44 that cuts the semiconductor plate 20 held by the chuck table 42 by suction. The chuck table 42 is configured to be freely rotatable, and includes X-axis moving means (not shown) that feeds the chuck table for processing in the direction indicated by the arrow X in the figure. The cutting means 44 includes a spindle 46 that is disposed and held in the Y-axis direction indicated by the arrow Y in the figure, and a ring-shaped cutting blade 48 that is held at the tip of the spindle 46, and includes Y-axis moving means (not shown) that indexes and feeds the cutting blade 48 in the Y-axis direction. The spindle 46 is driven to rotate by a spindle motor (not shown).

[0028] When forming the dice pattern using the above-mentioned multiple grooves 110, first, the semiconductor plate 20 is placed on the chuck table 42 of the cutting device 40 with the surface 20a facing upward and held by suction. Next, an alignment means (not shown) captures an image of the semiconductor plate 20 to detect the planned processing positions of the grooves 110 that will form the dice pattern. Then, the planned processing positions along a predetermined direction are aligned in the X-axis direction and aligned with the cutting blade 48.

[0029] The cutting blade 48, rotating at high speed in the direction indicated by arrow R2, is positioned at a target processing position aligned in the X-axis direction and cuts into the surface 20a, while the chuck table 42 is moved in the X-axis direction to form a groove 110. The Y-axis moving means is then actuated to index and move the cutting blade 48 of the cutting means 44 to a target processing position adjacent to the target processing position where the groove 110 was formed but where no groove 110 was formed, forming a groove 110 in the same manner as described above. By repeating this process, multiple grooves 110 are formed along all target processing positions along the X-axis direction. Next, the chuck table 42 is rotated 90 degrees, and the direction perpendicular to the direction in which the groove 110 was previously formed is aligned with the X-axis direction. The above-described cutting process is then performed on all target processing positions newly aligned in the X-axis direction, forming grooves 110 along the target processing positions where a dice-like pattern is to be formed on the surface 20a of the semiconductor plate 20. As a result, a dice-like pattern is formed on the surface 20a of the semiconductor plate 20 by multiple grooves 110. The plurality of grooves 110 formed in this embodiment are also preferably formed with the depth, width and intervals as shown in FIG. 2(b) above.

[0030] 3(b), a plurality of grooves 120 may be formed on the surface 20a of the semiconductor plate 20 from the center O to form a radial pattern. The grooves 120 are preferably formed with the same depth and width as the grooves 100 and 110, and the average spacing between adjacent grooves 120 is preferably the same as the spacing between the grooves 100 and 110 when they are formed.

[0031] The concentric, dice, and radial patterns described above are not limited to being formed individually, and any of them may be combined. In the above embodiment, the grooves 100 forming the concentric pattern are formed by the laser processing device 30, and the grooves 110 forming the dice pattern and the grooves 120 forming the radial pattern are formed by the cutting device 40. However, the groove forming process of the present invention is not limited to this. The grooves 100 forming the concentric pattern may be formed by the cutting device 40, and the grooves 110 forming the dice pattern and the grooves 120 forming the radial pattern may be formed by the laser processing device 30. However, when forming curved grooves, it is preferable to use the laser processing device 30.

[0032] (Hard part coating process) After the groove forming step is performed as described above, a hard member coating step is performed in which a hard member is applied to the side surfaces of at least the plurality of grooves (groove 100, groove 110, groove 120). The hard member used here includes at least a member harder than the material constituting the semiconductor plate 20. For example, the semiconductor plate 20 formed of silicon (Si) as in this embodiment is coated with a hard member containing any of SiO2, GaN, SiC, DLC, and polycrystalline diamond.

[0033] FIG. 4(a) shows an example in which a hard member 50 (e.g., SiO2) is coated on the surface 20a of a semiconductor plate 20 in which a plurality of grooves 100 are formed to form a concentric circular pattern by the hard portion coating process of this embodiment.

[0034] The coating of the hard member 50 can be performed by selecting from well-known methods, such as a deposition method by chemical vapor deposition (CVD), a physical vapor deposition (PVD) method in which a thin film-forming material is converted into particles and evaporated and scattered to adhere and deposit, a method of forming an oxide film by sputtering or the like, or a method of forming the hard member 50 by oxidizing the surface 20 a of the semiconductor plate 20 in an oxidation furnace.

[0035] The thickness of the hard member 50 coated on the surface 20a of the semiconductor plate 20 in the hard portion coating step is, for example, 100 μm. As shown in FIG. 4(a), by coating the entire surface 20a of the semiconductor plate 20 with the hard member 50, a dresser board 20A is completed in which the hard member 50 is coated on at least the side surfaces of the grooves 100. This completes the method for manufacturing a dresser board configured according to the present invention.

[0036] A hard member removal step is performed on the dresser board 20A shown in FIG. 4(a) by grinding the surface 20a of the semiconductor plate 20 coated with the hard member 50 to remove the hard member 50 from the surface 20a of the semiconductor plate 20. By performing this hard member removal step, the dresser board 20A becomes a dresser board 20A in which the surface 20a of the semiconductor plate 20 is exposed on the upper surface, and the upper end surfaces 52 of the hard members 50 coating the side surfaces of the grooves 100 are exposed on the upper surface, as shown in FIG. 4(b). The hard member removal step can be omitted by masking areas other than the grooves 100 and coating the grooves 100 with the hard members 50. The following describes a method for dressing a grinding wheel using the dresser board 20A in which the hard members 50 have been removed from the surface 20a of the semiconductor plate 20 as shown in FIG. 4(b).

[0037] The dressing method of this embodiment is carried out by, for example, transferring the above-mentioned dresser board 20A to the grinding device 1 shown in FIG.

[0038] The grinding device 1 shown in Figure 5 has an apparatus housing 2 and at least a chuck table 3 that holds a silicon (Si) wafer 10 with a protective tape T attached to its surface, a grinding means 4 that grinds the back surface of the wafer 10 held on the chuck table 3, and a feeding means 5 that feeds the grinding means 4 in the Z-axis direction (up and down direction) for processing.

[0039] As can be seen from Fig. 5, the chuck table 3 includes a holding surface 3a that holds the wafer 10 by suction, and a frame 3b that supports and surrounds the holding surface 3a. The holding surface 3a is made of a porous material that has air permeability, and a suction means (not shown) is connected to the frame 3b. By operating the suction means, a negative pressure is generated on the holding surface 3a, and the wafer 10 can be held by suction.

[0040] The chuck table 3 is configured to be rotatable by a rotary drive means (not shown), and is moved to any position in the Y-axis direction indicated by the arrow Y in the figure by a Y-axis moving means (not shown) housed inside the device housing 2, for example, to a loading / unloading position on the front side of the figure where the wafer 10 is loaded and unloaded, and to a grinding processing position directly below the grinding means 4 where grinding processing is performed.

[0041] The grinding means 4 includes at least a rotating shaft 4a, a wheel mount 4b disposed at the lower end of the rotating shaft 4a, a grinding wheel 4c attached to the wheel mount 4b, a plurality of grinding stones 4d arranged in a ring shape on the underside of the grinding wheel 4c, an electric motor 4g for rotating the rotating shaft 4a, a support 4e for supporting the grinding means 4, and a Z-axis movable base 4f supported on the vertical wall 2a of the apparatus housing 2 so as to be movable up and down in the Z-axis direction together with the support 4e. The grinding stone 4d is a grinding stone suitable for grinding the silicon (Si) wafer 10 described above. The feeding means 5 converts the rotational motion of the pulse motor 5a into linear motion via a ball screw 5b rotated by the pulse motor 5a and transmits the linear motion to the Z-axis movable base 4f, thereby moving the grinding means 4 to any position in the Z-axis direction (up and down).

[0042] Grinding water L is supplied from a grinding water supply source (not shown) to the upper end 4a' of the rotating shaft 4a, and then passed through the inside of the rotating shaft 4a to the wafer 10 held on the chuck table 3 and to the grinding wheel 4c that grinds the wafer 10. The grinding device 1 is equipped with a control means (not shown), and the above-mentioned operating parts are controlled by control signals issued from the control means.

[0043] The grinding apparatus 1 has roughly the configuration as described above, and a method for dressing the grinding wheel 4d performed using the illustrated grinding apparatus 1 will be described below.

[0044] (holding process) A dresser board 20A manufactured by the above-described method for manufacturing a dresser board is prepared, and as shown in FIG. 6, the other side of the dresser board 20A (the back surface 20b side of the semiconductor plate 20 on which the groove 100 is not formed) is placed on the holding surface 3a of the chuck table 3, and a suction means (not shown) is activated to generate negative pressure on the holding surface 3a and hold it.

[0045] (Dressing process) After the dresser board 20A is held on the chuck table 3 by the above-described holding step, the X-axis moving means is actuated to move the chuck table 3 directly below the grinding means 4, as shown in FIG. 7(a). Next, the rotating shaft 4a of the grinding means 4 is rotated in the direction indicated by arrow R3 in the figure at, for example, 6000 rpm, while the chuck table 3 is rotated in the direction indicated by arrow R4 at, for example, 300 rpm. Furthermore, the feeding means 5 is actuated to lower the grinding means 4 in the direction indicated by arrow R5, bringing the grinding wheel 4d into contact with the dresser board 20A. The grinding wheel 4c is then fed downward for a predetermined time at, for example, a speed of 1.0 μm / sec. At this time, it is preferable to supply grinding water L, supplied by a grinding water supply means (not shown), onto the surface 20a of the dresser board 20A via the rotating shaft 4a. 7(b), the end face 4d' of the grinding wheel 4d is dressed by the upper end face 52 of the hard member 50 that covers the side surface of the groove 100 of the dresser board 20A and is exposed on the surface 20a, and at the same time, the condition of the end face 4d' of the grinding wheel 4d is adjusted by the silicon semiconductor plate 20 that is exposed on the surface 20a of the dresser board 20A. This completes the dressing process of this embodiment.

[0046] According to the above-described method for manufacturing a dresser board, the dresser board, and the dressing method carried out using the dresser board, the dressing of the end face of the grinding wheel and the conditioning operation are carried out continuously in parallel, and after dressing the grinding wheel, a dummy wafer of the same quality as the wafer to be ground is prepared, and the dummy wafer is ground with the grinding wheel, thereby eliminating the need for conditioning and solving the conventional problem of poor productivity.

[0047] In the above-described embodiment, an example of implementing a dressing method based on the present invention is shown using a dresser board 20A configured by forming a plurality of grooves 100 on the surface 20a of the semiconductor plate 20 to form a concentric pattern. However, the same effects as those of the above-described embodiment can also be obtained with a dresser board configured by forming a dice pattern with a plurality of grooves 110 as shown in Figure 3(a) or a dresser board configured by forming a radial pattern with a plurality of grooves 120 as shown in Figure 3(b).

[0048] In the above-described embodiment, the dressing method is performed after the hard member removal step of removing the hard member 50 from the surface 20a of the semiconductor plate 20 constituting the dresser board 20A. However, the present invention is not necessarily limited to including and performing the hard member removal step. That is, a dresser board 20A having the hard member 50 coated over the entire surface 20a of the semiconductor plate 20 as shown in FIG. 4(a) may be prepared, and the end face 4d' of the grinding wheel 4d of the grinding means 4 may be dressed using this dresser board 20A. In this case, immediately after the dressing step begins, the end face 4d' of the grinding wheel 4d is dressed over the entire surface of the dresser board 20A coated with the hard member 50. As the dressing step progresses, the hard member 50 is removed from the surface of the dresser board 20A, exposing the surface 20a of the silicon semiconductor plate 20 constituting the dresser board 20A. The exposed silicon semiconductor plate 20 conditions the end face 4d' of the grinding wheel 4d. In this case, too, the above-mentioned effect is achieved, that is, after dressing the grinding wheel, a dummy wafer of the same quality as the wafer to be ground is prepared, and the dummy wafer is ground with the grinding wheel, eliminating the need to condition the wafer, thereby solving the conventional problem of poor productivity. [Explanation of symbols]

[0049] 1: Grinding device 2: Device housing 3: Chuck table 3a: Holding surface 3b: Frame 4: Grinding means 4a: Rotation axis 4b: Wheel mount 4c: Grinding wheel 4d: Grinding wheel 4d': End face 4e: Support part 4f: Z-axis moving base 4g: electric motor 5:Feeding means 10: Semiconductor wafer 20: Semiconductor plate 20a: Surface (one side) 20b: Back side (other side) 20A: Dresser board 30: Laser processing equipment 32: Chuck table 34: Laser beam irradiation means 36: Concentrator 40: Cutting equipment 42: Chuck table 44:Cutting means 46: Spindle 48: Cutting blade 50: Hard material 52: Upper end surface 100, 110, 120: groove L: Grinding water

Claims

1. A method for manufacturing a dresser board for dressing a grinding wheel for grinding a semiconductor wafer, comprising: a preparation step of preparing a semiconductor plate; a groove forming step of forming a plurality of grooves on one surface of the semiconductor plate; a hard member coating step of coating at least the side surfaces of the plurality of grooves with a hard member; A method for manufacturing a dresser board comprising the steps of:

2. 2. The method for manufacturing a dresser board according to claim 1, wherein the semiconductor wafer ground by the grinding wheel and the semiconductor plate prepared in the preparation step are made of the same material.

3. 2. The method for manufacturing a dresser board according to claim 1, wherein the grooves formed in the groove forming step are either concentric, radial or dice-shaped, or a combination thereof.

4. The semiconductor plate prepared in the preparation step is a silicon plate, and the hard member coated in the hard member coating step is a SiO ２ 3. The method for manufacturing a dresser board according to claim 1 or 2, wherein the material contains any one of GaN, SiC, DLC, and polycrystalline diamond.

5. A dresser board in which at least the side surfaces of a plurality of grooves formed on one surface of a semiconductor plate are covered with a hard member.

6. A method for dressing a grinding wheel for grinding a semiconductor wafer, comprising: a holding step of holding the other surface of the dresser board according to claim 5 on a chuck table; a dressing step in which the grinding wheel, which has a grinding stone arranged in an annular shape, is brought into contact with a dresser board held on the chuck table to dress the end face of the grinding stone with a hard member, and the end face of the grinding stone is conditioned with an exposed semiconductor plate; A method for dressing a grinding wheel comprising:

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