Indication device

Abstract

To improve the visibility of the touch panel or to improve the detection sensitivity of the touch panel. To raise. The touch panel has a third conductive layer in addition to the two conductive layers that form the capacitance. The third conductive layer is electrically connected to the first conductive layer, the second conductive layer of the capacitance element, or other circuits. The third conductive layer has a function as a wiring for connecting to the display element side of the light-shielding layer. The third conductive layer and the light-shielding layer are provided to have an overlapping region.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a touch panel. Or, to a flexible touch panel. do.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. One aspect of the present invention relates to a product, a method, or a manufacturing method. , manufacture, or composition of matter. Therefore, the technical field of one embodiment of the present invention disclosed in this specification is specifically related to semiconductor devices, Display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices, input / output devices , their driving methods, or their manufacturing methods can be cited as examples.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Refers to devices in general, including semiconductor elements such as transistors, semiconductor circuits, arithmetic units, and memory The device is one aspect of a semiconductor device. Optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.), and electronic devices The device may include a semiconductor device. [Background technology]

[0004] In recent years, display devices are expected to be used in a variety of applications, and diversification is required. For example, the development of smartphones and tablet devices with touch panels as mobile information terminals. is currently underway.

[0005] In addition, Patent Document 1 discloses a film substrate on which transistors and other elements serving as switching elements are mounted. A flexible active matrix light emitting device having an organic EL element is disclosed. . [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-174153 Summary of the Invention [Problem to be solved by the invention]

[0007] Touching the display panel screen with a finger or stylus as a user interface There is a demand for touch panels that have the ability to input data via touch.

[0008] For example, the touch panel may be configured so that a touch sensor is provided on the visible side of the display panel. It is desirable that the touch sensor provided on the touch panel has high detection sensitivity. Since the touch sensor is placed on top of the display panel, the display is Visibility may be reduced.

[0009] In particular, when light-shielding materials are used for the wiring that constitutes the touch sensor, the wiring may become visible. This can cause the display quality of the touch panel to deteriorate. In the case of materials that reflect light, the wiring may become visible due to the reflection when exposed to strong external light. be.

[0010] An object of one embodiment of the present invention is to improve the visibility of a touch panel. Another object of the present invention is to improve the detection sensitivity of a touch panel. One of the objectives is to provide a touch panel that can be bent. One of the objectives is to provide a lightweight touch panel. Another object of the present invention is to provide a highly reliable touch panel. One of the objectives is to provide a novel input device. This is one of the challenges.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. It is possible to extract other issues from the drawings, claims, etc. [Means for solving the problem]

[0012] One embodiment of the present invention is a display device including a first substrate, a second substrate, a display element, a first layer, and a second layer. a touch panel having a first conductive layer, a second conductive layer, a third conductive layer, and an insulating layer; The first substrate and the second substrate have an overlapping area. Between the substrates, a display element, a first layer, a second layer, a first conductive layer, a second conductive layer, The display device includes a third conductive layer and an insulating layer. The first layer is located closer to the first substrate than the display element. The first layer and the display element have an overlapping area. The second layer has a larger area than the display element. The insulating layer is located on the first substrate side. The insulating layer is located between the first conductive layer and the second conductive layer. The first conductive layer, the second conductive layer, and the insulating layer are formed to have a thickness greater than that of the first layer and the second layer. The third conductive layer is located closer to the first substrate than the display element, and The third conductive layer and the second layer have an overlapping region. The first conductive layer and the second conductive layer have a function of transmitting visible light. The first layer has the function of transmitting light in a specific wavelength band. The second layer has the function of blocking visible light. do.

[0013] In the above, the second layer has an opening, and the third conductive layer and the first conductive layer or the third conductive layer It is preferable that the second conductive layer is electrically connected through the opening.

[0014] In the above, it is preferable to have a structure including a transistor. The transistor is located closer to the first substrate than the first layer and closer to the first substrate than the second layer. The third conductive layer is located on the side of the transistor and electrically connected to the gate, source, or drain of the transistor. It is preferable to have a configuration in which they are connected.

[0015] In the above, it is preferable to use a light-emitting element as the display element.

[0016] In the above, the first substrate and the second substrate are preferably flexible.

[0017] In addition, any of the above touch panels and FPC (Flexible Printed Circuit) It is preferable that the touch panel module has a touch panel circuit. An electronic device incorporating a touch panel module in a housing is also one aspect of the present invention. [Effects of the Invention]

[0018] According to one aspect of the present invention, the visibility of a touch panel can be improved. It is possible to improve the detection sensitivity of the touch panel. Alternatively, a lightweight touch panel can be provided. Alternatively, a highly reliable touch panel can be provided. Alternatively, a novel input device can be provided. Alternatively, a novel input / output device can be provided. Note that the description of these effects may be omitted if other effects exist. However, it is not necessary for one embodiment of the present invention to have all of these effects. It is not necessary to do so. Effects other than those mentioned above can be automatically determined from the description, drawings, claims, etc. It is obvious that there are other effects than these from the description, drawings, claims, etc. It is possible to extract [Brief explanation of the drawings]

[0019] [Figure 1] 1 shows a configuration example of a touch panel module according to an embodiment. [Figure 2] 3 shows an example of a configuration of a stacked structure of a touch panel module according to an embodiment. [Figure 3] 3 shows an example of a configuration of a stacked structure of a touch panel module according to an embodiment. [Figure 4] 1 shows a configuration example of a touch panel module according to an embodiment. [Figure 5] 1 shows a configuration example of a touch panel module according to an embodiment. [Figure 6] 1 shows a configuration example of a touch panel module according to an embodiment. [Figure 7] 1A and 1B are a block diagram and a circuit diagram of a touch panel according to an embodiment. [Figure 8] 1A and 1B are a circuit diagram and a schematic diagram of a configuration of a touch panel according to an embodiment. [Figure 9] 1A and 1B are a block diagram and a circuit diagram of a configuration of a touch panel according to an embodiment. [Figure 10] FIG. 2 is a circuit diagram of a configuration of a touch panel according to an embodiment. [Figure 11] 1A to 1C are diagrams illustrating a method for driving a touch panel according to an embodiment. [Figure 12] 1. An electronic device according to an embodiment. [Figure 13] 1. An electronic device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0020] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiments, and various changes and modifications may be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention is based on the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0021] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0022] In each figure described in this specification, the size, layer thickness, or area of ​​each component is The figures may be exaggerated for clarity and are not necessarily limited to that scale. stomach.

[0023] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The number is not a numerical limitation.

[0024] A transistor is a type of semiconductor device that controls the amplification of current and voltage, and conduction or non-conduction. In this specification, the transistor can be , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT) ) is included.

[0025] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be used interchangeably with "conductive It may be possible to change the term to "film." Alternatively, for example, It may be possible to change the term to "insulating layer."

[0026] (Embodiment 1) In this embodiment, a touch sensor according to one embodiment of the present invention and a touch sensor including the touch sensor will be described. The configuration of the touch panel module, touch panel, and touch panel module will be explained. In the following, we will explain how to detect the contact of a finger, stylus, or other object by detecting the change in capacitance. A configuration example in which a touch sensor that detects contact or proximity is applied will be described.

[0027] In this specification, the substrate having the touch sensor may be, for example, an FPC or a TC. Connectors such as P (Tape Carrier Package) are attached. or the IC is mounted on the board using the COG (Chip On Glass) method, etc. The module is sometimes called a touch sensor module. A device that has both functions of displaying images etc. is sometimes called a touch panel (input / output device). Note that the touch panel must be equipped with the above connector or have an IC mounted. Such a device is sometimes called a touch panel module, or simply a touch panel.

[0028] A capacitive touch sensor that can be applied to one aspect of the present invention includes a capacitive element. The capacitance element may be formed, for example, by a first conductive layer, a second conductive layer, and an insulating layer sandwiched between them. In this case, the first conductive layer and the second conductive layer may have a laminated structure. Each layer functions as an electrode of the capacitor element, and the insulating layer functions as a dielectric.

[0029] Of the first and second conductive layers, the first conductive layer is provided on the touch surface (detection surface) side. The touch sensor according to one aspect of the present invention is a touch sensor that includes a first object to be detected, such as a finger or a stylus, and a second object to be detected, such as a touch panel. By detecting the capacitance formed between the conductive layer and the touch panel, it is possible to detect the touch operation. Specifically, when a predetermined potential difference is applied between the first conductive layer and the second conductive layer, A change in the potential of the first conductive layer caused by a capacitance formed by a touch operation is detected. This allows the touch operation to be detected.

[0030] Furthermore, the touch sensor of one embodiment of the present invention may be used in a display panel having pixels each including a display element. The pixels can be stacked to form a touch panel. Here, a color filter (also called a colored layer) is placed on the display element. By providing this, the color purity of the light from the pixel can be improved. By placing a light-blocking layer between the filters, the color mixing of the light emitted from two adjacent pixels is suppressed, This can improve the display quality.

[0031] Here, one aspect of the present invention is a capacitor having a third conductive layer in addition to the two conductive layers that constitute the capacitor. The third conductive layer is electrically connected to the first conductive layer, the second conductive layer of the capacitance element, or other circuits. In this case, it is preferable that the third conductive layer has a function as a wiring for connecting the light source and the light source. the third conductive layer and the light-shielding layer are provided on the display element side of the second conductive layer, and have an area where the third conductive layer and the light-shielding layer overlap each other. This makes it possible to detect the movement of the touch panel from the detection surface side (i.e., the display surface side). When viewed from the outside, the third conductive layer is hidden by the light-shielding layer, preventing it from being visible. This allows for a touch panel with extremely high visibility.

[0032] The third conductive layer is preferably made of a material containing, for example, a metal or an alloy. Materials containing ZnO have relatively high conductivity, so signal delays are suppressed when they are used for wiring or electrodes. The detection sensitivity of the touch sensor can be improved. Although it has the property of blocking visible light, the third conductive layer is hidden by the light-blocking layer, so it is difficult to see from the pixel. This allows the aperture ratio of the touch panel to be increased. The layer does not necessarily have to be made of a material that blocks light. For example, a conductive oxide or a conductive organic compound can be used. It is also possible to use a material that transmits part of visible light, such as a compound.

[0033] The touch panel is made up of two substrates: one that supports the touch sensor and one that supports the display element. In this case, the touch sensor has a configuration in which the substrates are arranged to face each other. The sensor elements include both capacitive elements and active elements such as transistors. It is preferable to use an active matrix touch sensor. This makes the touch sensor less susceptible to the effects of noise that occurs when the display element is driven. Therefore, the touch sensor and the display element are sandwiched between two substrates. Even if these are arranged close to each other, the decrease in detection sensitivity can be suppressed. By using flexible materials for the pair of substrates, a thin, lightweight and flexible substrate can be obtained. A touch panel can be realized.

[0034] At this time, the transistors that make up the sensor elements and circuits are mounted on the substrate that supports the touch sensor. A conductive layer is formed on the insulating layer, which functions as a wiring electrically connected to a transistor or a capacitor. It is preferable to apply the third conductive layer. By doing so, the detection surface side of the touch panel Even if a transistor or other element is provided on the sensing surface of the touch panel, The area of ​​the electrodes and wiring that can be seen from the outside can be minimized, thereby preventing deterioration of visibility. can be done.

[0035] A more specific configuration example of one embodiment of the present invention will be described below with reference to the drawings.

[0036] [Configuration example] FIG. 1(A) is a perspective schematic view of a touch panel module 10 according to one embodiment of the present invention. FIG. 1(B) is a perspective schematic view of the touch panel module 10 when it is unfolded. The panel module 10 is configured by stacking a touch sensor module 20 and a display panel 30. It has a structure in which

[0037] The touch sensor module 20 has a sensor element (also called a detection element) on a first substrate 21. 22, an FPC 41 is provided on a touch sensor (also called a touch sensor panel). A plurality of sensor elements 22 are arranged in a matrix on the first substrate 21. Also, on the first substrate 21, there are provided a circuit 23 electrically connected to the sensor element 22, and Preferably, a circuit 24 is provided.

[0038] At least one of the circuits 23 and 24 has a function of selecting a plurality of sensor elements 22. In addition, at least one of the circuits 23 and 24 may be a sensor. A circuit having a function of outputting a signal from the sensor element 22 can be applied.

[0039] The FPC 41 is connected to at least one of the sensor element 22, the circuit 23, and the circuit 24. The FPC 41 has a function of supplying a signal. It has a function of outputting a signal from at least one of the lines 24 to the outside.

[0040] The display panel 30 has a display section 32 on a second substrate 31. The display section 32 has a matrix The second substrate 31 has a plurality of pixels 33 arranged in a pattern. It is preferable to provide a circuit 34 electrically connected to the element 33. The circuit 34 may be, for example, a gate A circuit that functions as a driver circuit can be applied.

[0041] The FPC 42 supplies a signal from the outside to at least one of the display unit 32 and the circuit 34. In addition, in FIG. 1, the first substrate 31 has a configuration in which a terminal 43 is provided. The terminal 43 can be connected to, for example, an FPC or an IC that functions as a source driver circuit. Direct mounting using the COG or COF method, or FPC with IC mounted, It is possible to attach TAB, TCP, etc. It is also possible to attach IC or FP to the display panel 30. A form in which a connector such as C is mounted can also be called a display panel module.

[0042] The touch panel module 10 according to one embodiment of the present invention detects touch signals using a plurality of sensor elements 22. The display unit 3 can output position information based on the change in capacitance when an action is performed. 2, the touch panel module 10 can display an image. It can also be called a device.

[0043] [About the layered structure of touch panels] FIG. 2(A) is an enlarged schematic diagram of the area indicated by the dashed line in FIG. 1(A).

[0044] 2A shows the capacitance element 110 and the pixel 33 included in the sensor element 22 shown in FIG. , a wiring 25, and a wiring 26 are provided.

[0045] A plurality of capacitance elements 110 are arranged in a matrix. The wiring 26 is arranged in a direction intersecting the wiring 25. There are.

[0046] A plurality of pixels 33 are arranged in a matrix. are provided overlapping the capacitance element 110, and the other part is provided between two adjacent capacitance elements 110. It is provided so as to overlap with the area.

[0047] The pixel 33 includes at least a display element. The display element may be, for example, an organic EL ( It is preferable to use a light emitting element such as an electron luminescence element. In addition, there are electrophoretic, electronic powder, and electrowetting display elements. Display elements (also called electronic ink) using a shutter-type MEMS display Various display elements can be used, such as display elements, optical interference type MEMS display elements, and liquid crystal elements. can.

[0048] Also, transmissive LCD displays, semi-transmissive LCD displays, and reflective LCD displays It can also be applied to transflective LCDs and reflective LCDs. In order to realize a liquid crystal display, a part or all of the pixel electrodes are used as reflective electrodes. For example, a part or all of the pixel electrodes may be made of aluminum. In this case, the reflective electrode may have a thickness of 100 μm or 100 μm. It is also possible to provide a memory circuit such as RAM, which further reduces power consumption. In addition, a suitable configuration for the display element to be applied can be selected from various pixel circuits. It can be used.

[0049] FIG. 2B is a schematic diagram showing the stacked structure in the area overlapping with the capacitor element 110. As shown in FIG. 2B, a first conductive layer is provided between the first substrate 21 and the second substrate 31. 111, insulating layer 112, second conductive layer 113, light-shielding layer 115, colored layer 114r, colored layer 1 14g, a colored layer 114b, a third conductive layer 116, and a pixel 33 are arranged. The third conductive layer 116 corresponds to one of the wirings 26 shown in FIG.

[0050] In the following description, the colored layer 114r, the colored layer 114g, and the colored layer 114b will not be distinguished from each other. In addition, when describing matters common to these, it may be simply referred to as the colored layer 114. be.

[0051] An insulating layer 112 is sandwiched between a first conductive layer 111 and a second conductive layer 113. This constitutes a capacitance element 110 .

[0052] Each colored layer 114 has a function of transmitting light in a specific wavelength band. The colored layer 114r transmits red light, the colored layer 114g transmits green light, and the colored layer 114b transmits blue light. The pixel 33 and one of the colored layers 114 are arranged to overlap each other, Only light in a specific wavelength range from the light emitted from the pixel 33 can be transmitted to the first substrate 21 side. can.

[0053] The light-shielding layer 115 has a function of blocking visible light. The light-shielding layer 115 is disposed so as to overlap the area between the color layers 114. In FIG. The opening is formed in a shape having an opening, and the opening is arranged so as to overlap the pixel 33 and the colored layer 114. This shows an example of how this is done.

[0054] In FIG. 2B, the light-shielding layer 115 is disposed closer to the first substrate 21 than the colored layer 114. However, even if the colored layer 114 is disposed closer to the first substrate 21 than the light-shielding layer 115, good.

[0055] The first conductive layer 111, the insulating layer 112, and the second conductive layer 113 form the pixel 33 and the color layer. Therefore, the first conductive layer 111, the insulating layer 112, and the insulating layer 114 overlap each other. and the second conductive layer 113 are preferably made of a material that transmits visible light. stomach.

[0056] The third conductive layer 116 is disposed so as to be located between the light-shielding layer 115 and the pixels 33 . In other words, the third conductive layer 116 is located closer to the second substrate 31 than the light-shielding layer 115, In addition, it is located closer to the first substrate 21 than the pixel 33 .

[0057] The third conductive layer 116 and the light-shielding layer 115 are preferably arranged so as to overlap each other. This is preferable. By adopting such a configuration, the pixel 33 and the third conductive layer 116 do not overlap each other. Therefore, even if a material that blocks visible light is used for the third conductive layer 116, the aperture ratio of the pixel 33 is This can prevent a decline in quality.

[0058] FIG. 3 shows a case where an optical adjustment layer 119 is disposed between two adjacent first conductive layers 111. This indicates a match.

[0059] By providing the optical adjustment layer 119, the first conductive layer The pattern 111 becomes less visible, and the display quality can be improved.

[0060] The optical adjustment layer 119 is preferably a layer having optical properties (transmittance, refractive index, reflectance) similar to those of the first conductive layer 111. For example, a material having a transmittance equal to that of the first conductive layer 111 can be used. A material having a transmittance within ±5% can be used. It is preferable that the first conductive layer 9 is made of the same material as the first conductive layer 111. By processing the film, the first conductive layer 111 and the optical adjustment layer 119 are simultaneously formed, This is preferable because it simplifies the process.

[0061] When a conductive material is used for the optical adjustment layer 119, a predetermined electric current is applied to the optical adjustment layer 119. For example, a fixed potential such as a common potential or a ground potential can be supplied. A constant potential may be supplied to the optical adjustment layer 119. Alternatively, the first conductive layer 111 and Alternatively, the conductive layer 112 may be electrically connected to either the first conductive layer 112 or the second conductive layer 113.

[0062] FIG. 4 shows an example of the arrangement of the components when viewed from the first substrate 21 side. In this example, a transistor 251 having a bottom gate structure is provided on the first substrate 21 side. An example of the case is shown.

[0063] In FIG. 4, the transistor 251, the first conductive layer 111, the second conductive layer 113, the light-shielding layer 1 15, third conductive layers 116a to 116g, and fourth conductive layers 117a and 117b. do.

[0064] The transistor 251 has a gate electrode 13 from the first substrate 21 side (i.e., the front side of the paper). 1, a semiconductor layer 132, an electrode 133a, and an electrode 133b. The electrode 133a is a source or drain, and electrode 133b functions as the other of the source or drain. do.

[0065] The light-shielding layer 115 has a plurality of openings arranged in a matrix. Each opening of the light-shielding layer 115 is provided so as to overlap the pixel 33 and the colored layer 114. .

[0066] The third conductive layers 116a to 116g are arranged so as to overlap the light-shielding layer 115. Therefore, as shown in FIG. 4, it is not visible when viewed from the first substrate side. do not have.

[0067] In addition, the transistor 251 is provided so as to overlap the light-shielding layer 115 as shown in FIG. This configuration is preferable because it does not reduce the aperture ratio of the pixel.

[0068] The transistor 251 includes a gate electrode 131, a semiconductor layer 132, and an electrode 133. The electrodes 133a and 133b are formed in an island shape so that their areas are as small as possible. With this configuration, the detection surface side (i.e., the first substrate 21 side) This reduces the area that is visible from the outside, making it less noticeable, improving the visibility of the touch panel. can be improved.

[0069] 4, the semiconductor layer 132 of the transistor 251 is This shows an example in which the sensor is provided on the inner side. Therefore, even if the transistor 251 is irradiated with external light, the light does not reach the semiconductor layer 132. Therefore, fluctuations in the electrical characteristics of the transistor due to irradiation with external light can be suppressed. This can reduce the influence of external light and realize a highly reliable touch sensor. Since there is no need to connect a compensation circuit to reduce noise, the configuration of the touch sensor circuit can be simplified. .

[0070] The first conductive layer 111 has an island shape. The second conductive layer 113 has a thickness of 100 μm, which will be described later. A region including a contact portion between the first conductive layer 111 and the third conductive layer 116a and its surrounding area An opening is provided in the overlapping portion and in the portion overlapping with the region including the transistor 251 and its peripheral portion. do.

[0071] The first conductive layer 111 is connected to the third conductive layer 116 through an opening provided in the light-shielding layer 115 or the like. The third conductive layer 116a is electrically connected to the openings provided in the light-shielding layer 115 etc. The electrode 133a is electrically connected to the electrode 133b via the light-shielding layer 115. The third conductive layer 116 is electrically connected to the third conductive layer 116b through the opening. b and the third conductive layer 116d are electrically connected via the fourth conductive layer 117a. The third conductive layers 116e and 116f are respectively connected to the light-shielding layer 115 through openings provided therein. The third conductive layer 116f and the third conductive layer 11 are electrically connected to the gate electrode 131. 6g are electrically connected via the fourth conductive layer 117b. , and are arranged to intersect with the fourth conductive layers 117a and 117b.

[0072] In this way, two wirings on the same plane formed by the third conductive layer 116 intersect. A fourth conductive layer 117 is disposed above or below the third conductive layer 116. By using this configuration, the two wires can be arranged to cross each other without being electrically shorted. It can be placed.

[0073] At this time, the fourth conductive layer 117 is formed in a position slightly larger than the light-shielding layer 115, similar to the third conductive layer 116. 2 on the substrate 31 side (i.e., on the far side of the paper), it can be seen from the detection surface side. It can be suppressed.

[0074] [Cross-section example] An example of the cross-sectional configuration of the touch panel module 10 will be described below.

[0075] [Cross-sectional configuration example 1] FIG. 5(A) shows a schematic cross-sectional view of a touch panel module according to one embodiment of the present invention. The touch panel module shown in A) is an active matrix type touch panel between a pair of substrates. Since the display device has a display element and a sensor, it can be made thinner. In this case, a touch sensor in which each of a plurality of sensor elements has an active element is called an active matrix. This is called a touch sensor.

[0076] The touch panel module is configured such that the first substrate 21 and the second substrate 31 are bonded together by an adhesive layer 220. On the first substrate 21, a capacitor element 110, a transistor 251, transistor 252, contact portion 253, colored layer 114, light-shielding layer 115, third The second conductive layers 116a to 116d, the fourth conductive layer 117a, and the like are provided. On the substrate 31, transistors 201 to 203, a light emitting element 204, a contact A connector 205 and the like are provided.

[0077] On the second substrate 31, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are formed via an adhesive layer 211. 4, insulating layer 215, insulating layer 216, insulating layer 217, insulating layer 218, spacer 219, conductive layer 225, etc.

[0078] The light emitting element 204 is provided on the insulating layer 217. The light emitting element 204 has a first electrode 2 21, an EL layer 222, and a second electrode 223 (see FIG. 5(B)). An optical adjustment layer 224 is provided between the insulating layer 218 and the EL layer 222. It is provided to cover the ends of the first electrode 221 and the optical adjustment layer 224 .

[0079] In FIG. 5A, a pixel 33 includes a current control transistor 201 and a switching control transistor 202. The transistor 201 has a source or a drain. One of the drains is electrically connected to the first electrode 221 via a conductive layer 225 .

[0080] FIG. 5A shows an example in which a transistor 203 is provided in the circuit 34.

[0081] In FIG. 5A, a transistor 201 and a transistor 203 are formed with a channel. This shows an example in which a semiconductor layer formed by this method is sandwiched between two gate electrodes. Such a transistor can have a higher field-effect mobility than other transistors. As a result, it is possible to fabricate a circuit capable of high-speed operation. Furthermore, it is possible to reduce the area occupied by the circuit section. By applying transistors, display panels or touch panels can be made larger or have higher resolution. Even if the number of wires increases when the circuit is integrated, it is possible to reduce the signal delay in each wire. This makes it possible to suppress display unevenness.

[0082] Note that the transistors in the circuit 34 and the transistors in the pixel 33 have the same structure. The transistors in the circuit 34 may all have the same structure. Transistors of different structures may be used in combination. The transistors may have the same structure, or may be combined with transistors of different structures. Also, the transistors (transistor 251, transistor The transistors (e.g., transistor 252) may have the same structure or may have different structures. A combination of these may also be used.

[0083] The light emitting element 204 is a light emitting element of a top emission structure, and the light is emitted from the second electrode 223 side. The transistor 201 and the transistor 202 are overlapped with the light emitting region of the light emitting element 204. In addition to the above, the aperture ratio of the pixel 33 can be increased by arranging a capacitance element and wiring. do.

[0084] The first substrate 21 is provided on the second substrate 31 side with an insulating layer 262 and an insulating layer 263 interposed therebetween via an adhesive layer 261. 263, insulating layer 264, insulating layer 265, first conductive layer 111, insulating layer 112, second conductive layer layer 113, insulating layer 266, insulating layer 267, insulating layer 268, colored layer 114, light-shielding layer 115, It has third conductive layers 116a to 116d, a fourth conductive layer 117a, etc. A part of A) shows a cross-sectional structure corresponding to the cutting line AB shown in FIG.

[0085] The first conductive layer 111 is connected to the insulating layer 112, the insulating layer 266, the light-shielding layer 115, and the insulating layer 267. The third conductive layer 116a is electrically connected to the third conductive layer 116a through the opening. 116a is the insulating layer 264, the insulating layer 265, the insulating layer 112, the insulating layer 266, the light-shielding layer 115 The source or drain of the transistor 251 is connected to the insulating layer 267 through an opening. It is electrically connected to the

[0086] The third conductive layer 116b and the other of the source and drain of the transistor 251 are The fourth conductive layer 117a is electrically connected to the fourth conductive layer 117b through an opening formed in each insulating layer. are electrically connected to the third conductive layers 116b and 116d through openings provided in the insulating layer 268. In addition, the third conductive layer 116c is disposed so as to overlap the fourth conductive layer 117a. are.

[0087] In FIG. 5A, the fourth conductive layer 117a is positioned closer to the second substrate than the third conductive layer 116a and the like. Although the configuration in which the third layer is disposed on the plate 31 side is shown, the stacking order may be reversed. The conductive layer 116a and the like are disposed closer to the second substrate 31 than the insulating layer 268, and the fourth conductive layer 117 a or the like may be disposed between the insulating layer 267 and the insulating layer 268.

[0088] The light-emitting region of the light-emitting element 204 and the colored layer 114 are provided on top of each other. The light emitted from the colored layer 114 passes through the colored layer 114 and is emitted to the first substrate 21 side. As shown, the first conductive layer 111 and the second conductive layer 113 are disposed so as to overlap the light emitting element 204. When the light emitting element is placed in the device, it is preferable to use a conductive material that is transparent to visible light. It's nice.

[0089] Furthermore, by using flexible materials for the first substrate 21 and the second substrate 31, This makes it possible to realize a highly functional touch panel.

[0090] Furthermore, the touch panel of one embodiment of the present invention uses a color filter. The layer 114 is applied to three color pixels of R (red), G (green), and B (blue). In addition, it is also possible to use a configuration in which W (white) and Y (yellow) are used to express one color. It may also be configured to use the same element.

[0091] The combination of the colored layer 114 and the microcavity structure of the optical adjustment layer 224 Light with high color purity can be extracted from the touch panel of one embodiment of the present invention. The thickness of the adjustment layer 224 may be varied depending on the color of each pixel. Alternatively, the optical adjustment layer 224 may not be provided.

[0092] In addition, an EL layer that emits white light may be used as the EL layer 222 included in the light emitting element 204. By applying such a light-emitting element 204, it is possible to coat the EL layer 222 on each pixel. This reduces costs and makes it easier to achieve high pixel resolution. By changing the thickness of the optical adjustment layer 224 in the pixel, it is possible to obtain a suitable wavelength for each pixel. It is possible to extract light and improve color purity. 222 may be configured to be painted differently, in which case the optical adjustment layer 224 is not used. You can also do this.

[0093] Each insulating layer, etc., located in the area overlapping the contact portion 205 provided on the second substrate 31 An opening is provided in the contact portion 205, and a connection layer 260 is disposed in the opening. and FPC 41 are electrically connected. An opening is provided in each insulating layer, and the contact is formed through the connecting layer 210 disposed in the opening. The connector portion 253 and the FPC 42 are electrically connected.

[0094] In FIG. 5A, the contact portion 205 is connected to the source electrode and the drain electrode of the transistor. The structure shown has conductive layers formed by processing the same conductive film. 253 is a conductive layer formed by processing the same conductive film as the gate electrode of the transistor. A conductive layer formed by processing the same conductive film as the source electrode and drain electrode of the transistor, and a laminated structure of a conductive layer formed by processing the same conductive film as the first conductive layer 113. In this way, by configuring the contact part by stacking multiple conductive layers, This is preferable because it not only reduces electrical resistance but also increases mechanical strength.

[0095] The connection layer 210 and the connection layer 260 are made of anisotropic conductive film (ACF). Anisotropic Conductive Film and Anisotropic Conductive Paste (ACP) A sonotropic conductive paste can be used.

[0096] The insulating layer 212 and the insulating layer 262 are made of a material that is difficult for impurities such as water and hydrogen to diffuse. That is, the insulating layer 212 and the insulating layer 262 preferably function as a barrier film. With this configuration, the first substrate 21 and the second substrate 31 can be Even if a moisture-permeable material is used, the light emitting element 204 and each transistor are It is possible to effectively prevent the diffusion of impurities from the surface, resulting in a highly reliable touch panel. This can be achieved.

[0097] [About each component] Each of the above components will be described below.

[0098] The transistor has a conductive layer that functions as a gate electrode, a semiconductor layer, and a a conductive layer that functions as a drain electrode; a conductive layer that functions as a gate insulating layer; FIG. 5A shows a case where a bottom-gate transistor is applied. This shows:

[0099] The structure of the transistor included in the touch panel of the present invention is not particularly limited. The transistors may be staggered or inverted staggered. In addition, the transistor may have either a top gate type or a bottom gate type structure. The semiconductor material used for the transistor is not particularly limited, and examples thereof include oxide semiconductors, silicon, and gel. Examples include manganium.

[0100] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single-crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0101] In addition, semiconductor materials used in transistors include, for example, group 4 elements and compound semiconductors. Alternatively, an oxide semiconductor can be used for the semiconductor layer. A semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

[0102] In particular, an oxide semiconductor can be used as a semiconductor in which a channel of a transistor is formed. It is particularly preferable to use an oxide semiconductor having a larger band gap than silicon. It is preferable to use a semiconductor material with a wider band gap and lower carrier density than silicon. The use of such a compound is preferable because it can reduce the current in the off state of the transistor.

[0103] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) nothing.

[0104] In particular, the semiconductor layer has a plurality of crystal portions, and the c-axes of the crystal portions are aligned with the surface on which the semiconductor layer is formed. or oriented approximately perpendicular to the upper surface of the semiconductor layer and having no grain boundary between adjacent crystal portions. It is preferable to use an oxide semiconductor film that does not have a resistivity.

[0105] Such oxide semiconductors have no crystal grain boundaries, so when the display panel is bent, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in touch panels that are flexible and can be curved. It can be used.

[0106] Furthermore, by using such an oxide semiconductor as the semiconductor layer, fluctuations in electrical characteristics are suppressed. This allows for the realization of highly reliable transistors.

[0107] In addition, due to its low off-state current, the charge stored in the capacitance can be released for a long period of time via the transistor. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image displayed in the display area. As a result, a display device with extremely reduced power consumption can be realized.

[0108] Alternatively, silicon is preferably used as the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single-crystal silicon. It can be formed without any additional process and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to the pixel, the aperture ratio of the pixel can be improved. Even when the pixels are extremely fine, the gate drive circuit and source drive circuit This makes it possible to form the circuit and the pixel on the same substrate, reducing the number of parts that make up electronic devices. It is possible.

[0109] In addition to the gate, source, and drain of the transistor, various wiring that makes up the touch panel Materials that can be used for conductive layers such as wires and electrodes include aluminum, titanium, Chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or is a single layer or multilayer structure of tungsten metal or an alloy with tungsten as the main component. For example, a single layer structure of aluminum film containing silicon, or aluminum on titanium film Two-layer structure with aluminum film laminated on top of tungsten film. Two-layer structure with copper film laminated on copper-magnesium-aluminum alloy film, titanium film Two-layer structure with copper film laminated, two-layer structure with copper film laminated on tungsten film, titanium film or A titanium nitride film and an aluminum or copper film overlaid on the titanium film or titanium nitride film. A three-layer structure in which a titanium film or titanium nitride film is formed on top of the molybdenum A film or molybdenum nitride film is laminated on the molybdenum film or molybdenum nitride film. A aluminum or copper film is laminated, and then a molybdenum or molybdenum nitride film is formed on top of that. There are three-layer structures formed. Also, when copper containing manganese is used, it is possible to control the shape by etching. This is preferable as it increases control.

[0110] Examples of the conductive material having light-transmitting properties include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, and gallium-doped zinc oxide, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tantalum, etc. such as tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium Metallic materials and alloy materials containing such metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. When using these nitrides, it is sufficient to make them thin enough to have light transmission properties. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of tin oxide or the like, since the conductivity can be increased.

[0111] Examples of insulating materials that can be used for the various insulating layers, the spacer 219, etc. include acrylic. In addition to resins such as epoxy and resins with siloxane bonds, silicon oxide and oxynitride Inorganic insulating materials such as silicon, silicon nitride oxide, silicon nitride, and aluminum oxide are used. You can also be there.

[0112] As described above, the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and the light emitting device This can prevent a decrease in reliability.

[0113] As insulating films with low water permeability, films containing nitrogen and silicon such as silicon nitride film and silicon oxynitride film are used. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0114] For example, the water vapor permeation rate of a low-permeability insulating film is 1×10 -5 [g / m 2 ·day] or later Below, preferably 1 x 10 -6 [g / m 2 ·day] or less, preferably 1×10 -7 [ g / m2 ·day] or less, more preferably 1 × 10 -8 [g / m 2 ·day] or less do.

[0115] Each adhesive layer is made of a hardening resin such as a thermosetting resin, a photo-hardening resin, or a two-component mixed hardening resin. For example, acrylic, urethane, epoxy, or siloxane resins can be used. Resins having such a structure can be used.

[0116] The EL layer 222 has at least a light-emitting layer. The EL layer 222 includes the following layers other than the light-emitting layer: Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties Highly electron-injecting or bipolar material (highly electron-transporting and hole-transporting properties) The layer may further include a layer containing a material.

[0117] The EL layer 222 can be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 222 may each be formed by a vapor deposition method (vacuum evaporation). It can be formed by methods such as transfer method, printing method, ink jet method, coating method, etc. Cut.

[0118] Materials that can be used for the light-shielding layer 115 include carbon black, metal oxides, and composites. Examples of suitable oxides include composite oxides containing solid solutions of several metal oxides.

[0119] Materials that can be used for the colored layer 114 include metal materials, resin materials, pigments, and dyes. Examples include resin materials containing

[0120] Instead of the light-shielding layer 115, a laminated structure in which colored layers 114 of different colors are laminated is called a light-shielding layer. For example, the layer 115 may be provided on each of the adjacent pixels 33. Alternatively, two colored layers 114 may be partially overlapped and used as a light-shielding layer 115. .

[0121] In addition, the light-shielding layer 115 is not disposed between adjacent pixels of the same color, but between pixels of different colors. In this case, the pixel may be arranged only between two adjacent pixels of the same color. The region and the third conductive layer 116 (and / or the fourth conductive layer 117) are overlapped with each other. Alternatively, a light-transmitting material may be used for the fourth conductive layer 117 to block light. The light-shielding layer 11 is connected to the light-shielding layer 11 via the fourth conductive layer 117 disposed in the area where the light-shielding layer 115 is not provided. Alternatively, two third conductive layers 116 provided to overlap with the first conductive layer 5 may be electrically connected.

[0122] [Example of manufacturing method] Here, a method for manufacturing a flexible touch panel will be described.

[0123] For convenience, the term "structure including pixels and circuits," "structure including optical members such as color filters," and "structure including optical members such as color filters" will be used herein. The structure including the touch sensor is referred to as an element layer. The element layer includes, for example, a display element. In addition to display elements, wiring electrically connecting to display elements, transistors used in pixels and circuits, etc. The device may include the following elements:

[0124] Also, here, a support (for example, a first substrate 21 or The first substrate 31 or the second substrate 32 is referred to as a base material.

[0125] As a method for forming an element layer on a substrate having a flexible insulating surface, a method for forming a layer directly on the substrate can be used. A method for forming a contact element layer and a method for forming an element layer on a support substrate having a different rigidity from the substrate. Thereafter, the element layer is peeled off from the support base material and transferred onto the base material.

[0126] If the material constituting the base material is heat resistant to the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed in a state where the element is fixed to the support substrate, it is easy to transport the element within and between devices. This is preferable because it makes things easier.

[0127] In addition, when a method is used in which an element layer is formed on a supporting substrate and then transferred to a substrate, the supporting substrate is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The support substrate and the element layer are peeled off and transferred to the substrate. The material may be selected so that release occurs at the interface of the edge layer or in the release layer.

[0128] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxide layer of the metal material A layer including a material is stacked, and a layer in which silicon nitride or silicon oxynitride is stacked on a peeling layer. It is preferable to use a high melting point metal material. The degree of freedom in the process of forming the element layer is increased. This is desirable.

[0129] Peeling can be achieved by applying mechanical force, etching the peeling layer, or by breaking down the peeling interface. The peeling may be performed by dropping a liquid onto a portion of the surface and allowing it to penetrate the entire peeling interface. Alternatively, the peeling may be performed by applying heat to the peeling interface, taking advantage of the difference in thermal expansion.

[0130] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peel layer. For example, glass is used as the support substrate and an organic resin such as polyimide is used as the insulating layer. A part of the organic resin is locally heated using a laser beam or the like to form a peeling starting point. Alternatively, the separation may be performed at the interface between the glass and the insulating layer. Providing a metal layer between the edge layers and heating the metal layer by passing an electric current through the metal layer. The metal layer and the insulating layer may be peeled off at the interface by the organic resin. The insulating layer can be used as a substrate.

[0131] Examples of flexible substrates include polyethylene terephthalate (PET), poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resins, Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Resins, polyamide-imide resins, polyvinyl chloride resins, etc. are particularly suitable. It is preferable to use a material with a low thermal expansion coefficient, for example, 30×10 -6 / K or less Polyamide-imide resin, polyimide resin, PET, etc. can be suitably used. Substrates made of resin-impregnated fibers (also called prepregs) and inorganic fillers mixed with organic resins are also used. It is also possible to use a substrate with a reduced thermal expansion coefficient.

[0132] When the above materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples include polyvinyl alcohol fibers, polyester fibers, and polyamide fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxide Examples of the fiber include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made from glass, S-glass, D-glass, and Q-glass. Alternatively, the fiber is used in the form of a nonwoven fabric, and the resin is impregnated into the fiber, and the resin is hardened to form a flexible structure. As a flexible substrate, a substrate made of a fiber body and a resin may be used. The use of a structure is preferable because it improves reliability against damage due to bending or local pressure. stomach.

[0133] Alternatively, glass, metal, or the like that is thin enough to be flexible can also be used as the substrate. Alternatively, a composite material in which glass and a resin material are bonded together may be used.

[0134] For example, in the case of the configuration shown in FIG. 5(A), a first release layer and an insulating layer 26 are formed on a first support substrate. 2 is formed in order, and then the upper layer structure is formed. After forming the second release layer and the insulating layer 212 in this order on the support substrate, the structure above them is Next, the first support substrate and the second support substrate are bonded together with an adhesive layer 220. Thereafter, the second release layer is peeled off at the interface between the second release layer and the insulating layer 212, thereby forming the second support substrate and The peel layer 2 is removed, and the insulating layer 212 and the second substrate 31 are bonded together with the adhesive layer 211. In addition, the first release layer and the insulating layer 262 are peeled off at the interface between them, so that the first support substrate and the first The release layer is removed, and the insulating layer 262 and the first substrate 21 are bonded together with the adhesive layer 261 . The peeling and bonding may be performed on either side first.

[0135] The above is a description of the method for producing a flexible touch panel.

[0136] [Cross-sectional configuration example 2] FIG. 6 shows an example of a cross-sectional configuration that is partially different from that shown in FIG. 5. The configuration shown in FIG. 6 is the same as that shown in FIG. The main difference from the previous configuration is that the configuration of the first conductive layer 111 is different.

[0137] In FIG. 6, instead of the first conductive layer 111 in FIG. 5, a transistor 251 and a transistor A first conductive layer having a semiconductor layer formed by processing the same film as the semiconductor layer of the transistor 252. The first conductive layer 111a is connected to the insulating layer 265. It is set up as such.

[0138] Here, the first conductive layer 111a preferably contains an oxide semiconductor. The resistance can be controlled by adjusting the oxygen deficiency and / or the concentration of impurities such as hydrogen and water in the film. Therefore, the semiconductor layer applied to the first conductive layer 111a and the Even if the semiconductor layer applied to the transistor is formed by processing the same semiconductor film, For each semiconductor layer, a treatment that increases oxygen deficiency or / and impurity concentration, or an oxidation treatment By selectively applying treatments that reduce element deficiency and / or impurity concentration, these semiconductors The resistivity of the layer can be controlled.

[0139] Specifically, the acid contained in the first conductive layer 111a functioning as an electrode of the capacitor 110 a plasma treatment on the oxide semiconductor layer to increase oxygen vacancies in the oxide semiconductor layer; or and / or by increasing impurities such as hydrogen and water in the oxide semiconductor layer, the carrier density The first conductive layer 111a can be formed to include an oxide semiconductor having high conductivity and low resistance. An insulating film (insulating layer 265) containing hydrogen is formed in contact with the compound semiconductor layer, and the insulating film containing hydrogen is formed in contact with the compound semiconductor layer. By diffusing hydrogen from the oxide semiconductor layer to the oxide semiconductor layer, an oxide semiconductor layer with high carrier density and low resistance can be obtained. Such an oxide semiconductor layer can be used as the first conductive layer 111a. can be applied.

[0140] On the other hand, an oxide semiconductor layer is formed on the transistor 251 and the transistor 252. In order to prevent the insulating layer 264 from being exposed to the thermal treatment, the insulating layer 264 is provided. Therefore, the oxide semiconductor layer can be prevented from being in contact with the insulating layer 265 containing hydrogen. By using an insulating film capable of releasing oxygen as the insulating layer 264, Oxygen can be supplied to the oxide semiconductor layer. Oxygen vacancies in the film or at the interface of the film are reduced, resulting in a high-resistance oxide semiconductor layer. Examples of insulating films capable of releasing oxygen include silicon oxide films and silicon oxynitride films. etc. can be used.

[0141] In addition, the plasma treatment performed on the oxide semiconductor layer is typically performed using a rare gas (He, Ne , Ar, Kr, Xe), phosphorus, boron, hydrogen, and a gas containing one selected from nitrogen More specifically, plasma treatment under an Ar atmosphere, Plasma treatment in a mixed gas atmosphere of Ar and hydrogen, and plasma treatment in an ammonia atmosphere Plasma treatment in a mixed gas atmosphere of Ar and ammonia, or plasma treatment in a nitrogen atmosphere Examples include ma processing.

[0142] By the plasma treatment, the oxide semiconductor layer is formed into a lattice from which oxygen has been desorbed (or Oxygen vacancies are formed in the separated areas. These oxygen vacancies are a cause of carrier generation. In addition, in the vicinity of the oxide semiconductor layer, more specifically, in the area below the oxide semiconductor layer, Alternatively, hydrogen is supplied from the insulating layer in contact with the upper side, and when hydrogen enters the oxygen vacancy, Therefore, plasma treatment increases oxygen vacancies. The oxide semiconductor layer applied to the first conductive layer 111a is the same as the oxide semiconductor layer applied to the transistor. The carrier density is higher than that of the compound semiconductor layer.

[0143] On the other hand, oxide semiconductors that are applied to transistors with reduced oxygen vacancies and reduced hydrogen concentrations are The oxide semiconductor layer can be said to be a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer. So, essentially intrinsic means that the carrier density of the oxide semiconductor is 1×10 17 / cm 3 Less than Preferably 1 × 10 15 / cm 3 more preferably less than 1×10 1 3 / cm 3 Or, it means that the impurity concentration is low and the defect level density is low (oxidation High purity authentic or substantially high purity authentic is called high purity authentic or substantially high purity authentic. Intrinsic oxide semiconductors with high purity have few carrier generation sources, so they can reduce the carrier density. Therefore, a transistor in which a channel region is formed in the oxide semiconductor film can be formed. The threshold voltage of the transistor is positive (also called a normally-off characteristic). In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer has a low density of defect states. Since the concentration is low, the trap state density can be reduced.

[0144] In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer has a significantly low off-state current. Small, with a channel width of 1×10 6 Even if the device has a channel length L of 10 μm, When the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1V to 10V, The current is below the measurement limit of the semiconductor parameter analyzer, i.e., 1×10 -13 A and below Therefore, a channel region is formed in the oxide semiconductor layer. The transistors 251 and 252 have small fluctuations in electrical characteristics and are highly reliable. The transistor 201 provided on the second substrate 31 side is a transistor. It is preferable that a similar oxide semiconductor layer is used for the transistor 202, the transistor 203, and the like. .

[0145] 6, the insulating layer 264 is a first conductive layer that functions as an electrode of the capacitor element 110. The insulating layer 2 is provided so that the area overlapping the insulating layer 2 is selectively removed. After being formed in contact with the first conductive layer 111a, the insulating film 65 is removed from the first conductive layer 111a. The insulating layer 265 may be, for example, an insulating film containing hydrogen, in other words, a film that releases hydrogen. By using an insulating film capable of forming the first conductive layer 11, typically a silicon nitride film, The insulating film capable of releasing hydrogen is made of the material containing hydrogen. Hydrogen concentration is 1×10 22 atoms / cm 3 It is preferable that the insulating film is more than or equal to this. By forming the first conductive layer 111a in contact with the first conductive layer 111a, hydrogen can be effectively introduced into the first conductive layer 111a. In this way, in combination with the above-described plasma treatment, the oxide semiconductor The resistance of the oxide semiconductor layer can be adjusted arbitrarily by changing the composition of the insulating film in contact with the layer. Note that a layer containing an oxide semiconductor with sufficiently low resistance is called an oxide conductor layer. It can also be replaced.

[0146] The hydrogen contained in the first conductive layer 111a reacts with the oxygen that bonds with the metal atoms to form water. At the same time, oxygen vacancies are formed in the lattice from which oxygen has been desorbed (or in the portion from which oxygen has been desorbed). When hydrogen enters the oxygen vacancy, electrons, which act as carriers, may be generated. When a part of the oxygen bonds with a metal atom, it generates electrons as carriers. Therefore, the oxide semiconductor contained in the first conductive layer 111a containing hydrogen has a higher carrier density than an oxide semiconductor used in a transistor.

[0147] The oxide semiconductor layer in which the channel region of the transistor is formed has as little hydrogen as possible. Specifically, it is preferable that the oxide semiconductor layer is SIMS (Secondary Ion Mass Spectrometry) The resulting hydrogen concentration is 2 x 10 20 atoms / cm 3 Less than or equal to 5 x 10 19 a toms / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Below, 5 x 10 18 atoms / cm 3 Less than 1 x 10 18 atoms / cm 3 Below, more preferred Preferably 5 x 10 17 atoms / cm 3 or less, more preferably 1 × 10 16 atom s / cm 3 The following applies.

[0148] On the other hand, the oxide semiconductor contained in the first conductive layer 111a functioning as an electrode of the capacitor element 110 The conductor has a higher hydrogen concentration and / or oxygen concentration than the oxide semiconductor used in the transistor. There are many defects and the resistance is low.

[0149] The first conductive layer 111a and the oxide semiconductor layer used in the transistor are typically n-Ga oxide, In-Zn oxide, In-M-Zn oxide (M is Mg, Al, Ti, It is formed of a metal oxide such as Ga, Y, Zr, La, Ce, Nd, or Hf. The first conductive layer 111a and the oxide semiconductor layer used in the transistor have a light-transmitting property.

[0150] Note that the first conductive layer 111a and the oxide semiconductor layer used in the transistor are In-M- In the case of Zn oxide, when the sum of In and M is 100 atomic %, In is 25 atomic %. omic% or more, M less than 75 atomic%, or In 34 atomic% or more, M is less than 66 atomic %.

[0151] The first conductive layer 111a and the oxide semiconductor layer used in the transistor are The gap is preferably 2 eV or more, or 2.5 eV or more, or 3 eV or more.

[0152] The thickness of the first conductive layer 111a and the oxide semiconductor layer used in the transistor is 3 nm or more. 200nm or less, or 3nm to 100nm or 3nm to 60nm It is possible.

[0153] The first conductive layer 111a and the oxide semiconductor layer used in the transistor are made of In-M-Zn oxide. In the case of oxides, the sputtering target used to deposit In-M-Zn oxide films The atomic ratio of the metal elements preferably satisfies In≧M and Zn≧M. The atomic ratio of the metal elements in the targeting target was In:M:Zn=1:1:1, In: M:Zn=1:1:1.2, In:M:Zn=2:1:1.5, In:M:Zn=2:1 In:M:Zn=2:1:3, In:M:Zn=3:1:2, etc. are preferred. The atoms of the first conductive layer 111a and the oxide semiconductor layer applied to the transistor are The numerical ratios are calculated by taking into account the atomic fraction of the metal elements contained in the sputtering target. This includes a variation of plus or minus 40% in numerical ratios.

[0154] In addition, when hydrogen is added to an oxide semiconductor in which oxygen vacancies are formed, hydrogen is added to the oxygen vacancy sites. As a result, the oxide semiconductor has high conductivity. The oxide semiconductor that has become a conductor can be called an oxide conductor. In general, oxide semiconductors have a large energy gap and are therefore transparent to visible light. On the other hand, an oxide conductor is an oxide semiconductor that has a donor level near the conduction band. Therefore, the influence of absorption due to the donor level is small, and the absorption of visible light is as strong as that of an oxide semiconductor. The oxide conductor is a degenerate semiconductor, and the conduction band edge and the Fermi level are It can be said that the oxide conductor film is identical or substantially identical. It can be used for electrodes etc.

[0155] By using the structure shown in FIG. 6, the first conductive layer 111a can be formed simultaneously in the manufacturing process of the transistor. Since the first step in FIG. Since a photomask is not required when forming the conductive layer 111a, the manufacturing cost is reduced. It is also possible to do this.

[0156] The above is a description of the cross-sectional configuration example.

[0157] In this embodiment, the touch sensor is configured such that the sensor element is an active element such as a transistor. Although an active matrix touch sensor having an active element is illustrated, A passive matrix touch sensor may also be used. A structure having two substrates: a first substrate supporting a sensor and a second substrate supporting a display element. For example, a display element may be sandwiched between two substrates and a touch panel may be used. A first substrate supporting the sensor may be attached to form a three-substrate structure. The element and touch sensor are sandwiched between two substrates, and these are then bonded together to form four substrates. The configuration may also include the following.

[0158] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0159] (Embodiment 2) In this embodiment, a configuration example of a touch sensor according to one embodiment of the present invention and an example of a driving method thereof will be described. This will be explained with reference to the drawings.

[0160] [Configuration example] FIG. 7A illustrates a structure of a touch panel (also referred to as an input / output device) of one embodiment of the present invention. FIG. 7(B) is a circuit diagram illustrating the configuration of the converter CONV. FIG. 7(C) is a circuit diagram for explaining the configuration of the sensor element 22. 7(D-2) is a timing chart for explaining a method for driving the sensor element 22. In FIG.

[0161] The touch sensor exemplified in this embodiment has a plurality of sensor elements arranged in a matrix. 22, a signal line DL to which a plurality of sensor elements 22 arranged in the row direction are electrically connected, and a flexible substrate 21 on which the sensor element 22, the scanning line G1, and the signal line DL are arranged. (See Figure 7(A)).

[0162] For example, the plurality of sensor elements 22 may be arranged in a matrix of n rows and m columns (n ​​and m are natural numbers equal to or greater than 1). They can be arranged in a trix shape.

[0163] The sensor element 22 includes a capacitance element C that functions as a detection element. This corresponds to the capacitance element 110 in the first embodiment. For example, the first electrode of the capacitance element C is The first electrode corresponds to the first conductive layer 111 in the first embodiment, and the second electrode corresponds to the second conductive layer 113. do.

[0164] In addition, the third conductive layer 116 in the first embodiment is used for wiring such as the signal line DL and the scanning line G1. A fourth conductive layer 117 may be applied.

[0165] The second electrode of the capacitor C is electrically connected to the wiring CS. The potential of the second electrode of C can be controlled using a control signal supplied by a line CS.

[0166] The sensor element 22 according to one embodiment of the present invention includes at least a transistor M1. The transistor M2 and / or the transistor M3 may be provided (see FIG. 7(C)). ).

[0167] The transistor M1 has a gate electrically connected to a first electrode of the capacitance element C, and The electrode is electrically connected to the wiring VPI. The wiring VPI supplies, for example, a ground potential. It has a function.

[0168] The transistor M2 has a gate electrically connected to the scanning line G1 and a first electrode The second electrode is electrically connected to the second electrode of the transistor M1, and the second electrode is electrically connected to the signal line DL. The scanning line G1 has a function of supplying a selection signal, for example. For example, it has a function of supplying a detection signal DATA.

[0169] The transistor M3 has a gate electrically connected to the wiring RES and a first electrode connected to the capacitor element C, and the second electrode is electrically connected to the wiring VRES. The wiring RES has a function of supplying a reset signal, for example. For example, it has a function of supplying a potential that can make the transistor M1 conductive.

[0170] The capacitance of the capacitance element C is increased by, for example, the proximity of an object to the first electrode or the second electrode, or Alternatively, the distance between the first electrode and the second electrode may be changed. The sensor element 22 can supply a detection signal DATA based on the change in capacitance of the capacitance element C. Cut.

[0171] The wiring CS electrically connected to the second electrode of the capacitor C is It has a function of supplying a control signal that controls the potential of the electrode.

[0172] The first electrode of the capacitance element C, the gate of the transistor M1, and the third electrode of the transistor M3 The node formed by electrically connecting the electrodes is called node A.

[0173] FIG. 8A shows a case where two sensor elements 22 are arranged in the row direction and two in the column direction. An example of a circuit diagram for this case is shown below.

[0174] FIG. 8B shows a first conductive layer 111 (corresponding to a first electrode) of the sensor element 22. 1 shows an example of the positional relationship with each wiring. The first conductive layer 111 is a gate of the transistor M1. The first electrode of the transistor M1 is electrically connected to the first electrode of the transistor M2. The conductive layer 111 is disposed so as to overlap with the plurality of pixels 33 shown in FIG. 8(C). As shown in FIG. 8B, the transistors M1 to M3 are formed in a layer that overlaps the first conductive layer 111. It is preferable to place it in an area where there is no

[0175] As shown in FIGS. 9A to 9C, the sensor element 22 includes a transistor M2. In this case, in the plurality of sensor elements 22 arranged in the row direction, The second electrode of each capacitance element C is electrically connected to the scanning line G1 instead of the wiring CS. Just do that.

[0176] The wiring VPO and the wiring BR shown in FIG. 7B are connected to the transistors, for example, by turning them on. The signal line DL has a function of supplying a high power supply potential so that the detection signal DAT The terminal OUT outputs a signal converted based on the detection signal DATA. It has the function of supplying

[0177] The converter CONV has a conversion circuit that converts the detection signal DATA and supplies it to the terminal OUT. Various circuits that can be used for the converter CONV. For example, the converter C By electrically connecting the ONV to the sensor element 22, a source follower circuit or A circuit that functions as a center mirror circuit may also be applied.

[0178] Specifically, a converter CONV using a transistor M4 is used to form a source follower circuit. (See FIG. 7B.) Note that the transistors M1 to M3 are fabricated in the same process. A transistor capable of performing this function may be used for transistor M4.

[0179] For example, the configuration of the transistor 251 or the transistor 252 illustrated in the first embodiment can be applied to each of the transistors M1 to M4.

[0180] The configuration of the converter CONV is not limited to the configuration shown in FIG. 1 shows different configuration examples of CONV.

[0181] The converter CONV shown in FIG. 10(A) includes a transistor M5 in addition to the transistor M4. Specifically, the transistor M5 has a gate electrically connected to the signal line DL and a first The electrode is electrically connected to the terminal OUT, and the second electrode is electrically connected to the wiring GND. GND has a function of supplying, for example, a ground potential. Even if the transistor M4 and the transistor M5 each have a second gate, In this case, it is preferable that the second gate is electrically connected to the gate. .

[0182] The converter CONV shown in FIG. 10(C) also includes a transistor M5 and a resistor R. Specifically, the gate of the transistor M4 is electrically connected to the wiring BR1. 5, the gate is electrically connected to the wiring BR2, the first electrode is connected to the terminal OUT, and the third electrode of the resistor R The first electrode is electrically connected to the first wiring GND. The electrode of the first wiring BR1 is electrically connected to the wiring VDD. Each of them has the function of supplying a high power supply potential that can turn on the transistor. The wiring VDD has a function of supplying, for example, a high power supply potential.

[0183] [Drive method example] Next, a method for driving the sensor element 22 will be described with reference to FIG.

[0184] [First step] In the first step, a relay that turns on and then off transistor M3 is A set signal is supplied to the gate of the transistor M3, and the potential of the first electrode of the capacitance element C ( That is, the potential of the node A is set to a predetermined potential (see FIG. 7(D-1), period T1).

[0185] Specifically, a reset signal is supplied to the wiring RES. The transistor M3 can change the potential of the node A, for example, to make the transistor M1 conductive. To make an electric potential.

[0186] [Second step] In a second step, a selection signal that turns on transistor M2 is applied to transistor and electrically connects the second electrode of transistor M1 to signal line DL. (See Figure 7(D-1), period T2).

[0187] Specifically, a selection signal is supplied to the scanning line G1. 2 electrically connects the second electrode of the transistor M1 to the signal line DL.

[0188] [Third Step] In a third step, a control signal is supplied to the second electrode of the capacitance element C, and the control signal and A potential that changes based on the capacitance of the capacitive element C is supplied to the gate of the transistor M1.

[0189] Specifically, a rectangular control signal is supplied to the wiring CS. When a voltage is applied to the electrode of node 2, the potential of node A changes based on the capacitance of the capacitance element C (FIG. 7( D-1), see the second half of period T2).

[0190] For example, if a capacitance element C is placed in the air, anything with a higher dielectric constant than the air will When the second electrode of the element C is placed close to the first electrode, the capacitance of the capacitive element C appears to be large. .

[0191] As a result, the change in the potential of node A caused by the rectangular control signal is The difference is smaller than when the objects are not placed close to each other (see Figure 7(D-2), solid line). ).

[0192] Alternatively, the distance between the first electrode and the second electrode of the capacitance element C changes with the deformation of the touch panel. When the voltage Vcc is increased, the capacitance of the capacitor C also changes. This causes the potential of the node A to change. .

[0193] [Fourth step] In the fourth step, the signal resulting from the change in the potential at the gate of transistor M1 is It will be supplied to Line DL.

[0194] For example, the change in the current caused by the change in the gate potential of the transistor M1 is transmitted to the signal line DL. Supply.

[0195] The converter CONV converts the change in the current flowing through the signal line DL into a change in voltage and supplies do.

[0196] [5th ​​step] In the fifth step, a selection signal that turns off transistor M2 is applied to transistor M1. The voltage is supplied to the gate of the inverter M2.

[0197] This completes the operation of the plurality of sensor elements 22 electrically connected to one scanning line G1. do.

[0198] In the case where there are n scanning lines G1, for the scanning lines G1(1) to G1(n), Simply repeat steps 1 to 5 for each.

[0199] Alternatively, when the wiring RES and the wiring CS are common to each sensor element 22, as shown in FIG. That is, first, a reset signal is supplied to the wiring RES. Next, while a control signal is being supplied to the wiring CS, the scanning lines G1(1) to G1 By sequentially supplying a selection signal to (n), the signal caused by the change in the potential of node A is The signals are supplied to signal lines DL(1) through DL(m).

[0200] By using this method, the frequency of supplying the reset signal and the control signal can be reduced. This can be done.

[0201] The above is the explanation of the driving method.

[0202] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0203] (Embodiment 3) In this embodiment, electronic devices and lighting devices that can be manufactured by applying one embodiment of the present invention will be described. This will be explained with reference to FIGS. 12 and 13.

[0204] The touch panel according to one embodiment of the present invention is flexible. Furthermore, by applying one embodiment of the present invention, This allows for the creation of highly reliable electronic devices and lighting devices that are resistant to repeated bending.

[0205] Examples of electronic devices include television sets (also known as televisions or television receivers). (hereinafter referred to as "computer monitors"), digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, Examples include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0206] Furthermore, since the touch panel of one embodiment of the present invention is flexible, it can be attached to the interior walls of houses or buildings. It can also be incorporated into an exterior wall or along a curved surface of the interior or exterior of a vehicle.

[0207] The electronic device of one embodiment of the present invention may include a touch panel and a secondary battery. At this time, it is preferable that the secondary battery can be charged using contactless power transmission.

[0208] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, lithium-ion batteries, nickel-metal hydride batteries batteries, nickel-cadmium batteries, organic radical batteries, lead-acid batteries, secondary air batteries, nickel-zinc batteries, silver-zinc batteries Examples include lead batteries.

[0209] The electronic device of one embodiment of the present invention may include a touch panel and an antenna. By receiving the signal through the receiver, images and information can be displayed on the display unit. If the slave device has a secondary battery, the antenna may be used for contactless power transmission.

[0210] 12A shows an example of a mobile phone. The mobile phone 7400 has a housing 740 1, in addition to the display unit 7402, operation buttons 7403, and external connection port 7404 , a speaker 7405, a microphone 7406, etc. The touch panel of one embodiment of the present invention is used for the display portion 7402. According to one aspect of the present invention, a highly reliable mobile phone having a curved display can be provided with a high yield. Can be provided.

[0211] In the mobile phone 7400 shown in FIG. 12A, when a user touches the display portion 7402 with a finger or the like, You can also make calls, enter text, and perform other functions. The operation can be performed by touching the display portion 7402 with a finger or the like.

[0212] In addition, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 For example, from the email creation screen, you can change the type of image displayed. You can switch to the main menu screen.

[0213] FIG. 12B shows an example of a wristwatch-type portable information terminal. The watch includes a housing 7101, a display unit 7102, a band 7103, a buckle 7104, and an operation button 7 105, input / output terminal 7106, etc.

[0214] The mobile information terminal 7100 is capable of performing functions such as mobile phone calls, e-mails, document viewing and creation, music playback, internet It can run various applications such as internet communication and computer games. Cut.

[0215] The display surface of the display unit 7102 is curved, and the display is performed along the curved display surface. The display portion 7102 is provided with a touch sensor, and the screen can be touched with a finger or a stylus. For example, the icon 7 displayed on the display unit 7102 can be operated by touching it. You can launch the application by touching 107.

[0216] The operation button 7105 is used to set the time, turn the power on and off, and turn wireless communication on and off. It has various functions such as auto-start, silent mode activation and deactivation, power saving mode activation and deactivation, etc. For example, an operation system built into the portable information terminal 7100 can be The function of the operation button 7105 can also be freely set using the stem.

[0217] In addition, the mobile information terminal 7100 is capable of performing short-distance wireless communication according to a communication standard. For example, by communicating with a wireless headset, hands-free You can also make calls.

[0218] The portable information terminal 7100 also has an input / output terminal 7106, and can be connected to other information terminals via a connector. Data can be exchanged directly through the input / output terminal 7106. The charging operation can be performed by wireless power supply without going through the input / output terminal 7106. You may go.

[0219] The touch panel of one embodiment of the present invention is incorporated in the display portion 7102 of the portable information terminal 7100. According to one aspect of the present invention, a highly reliable portable information device having a curved display is provided. Terminals can be provided with a high yield.

[0220] 12(C) to 12(E) show examples of the lighting device. The lighting device 7210 and the lighting device 7220 are mounted on a base 72 01 and a light emitting part supported by a base part 7201.

[0221] The lighting device 7200 shown in FIG. 12(C) includes a light-emitting unit 7202 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0222] The light-emitting portion 7212 of the lighting device 7210 shown in FIG. 12(D) has two convexly curved portions. Therefore, the light emitting units are arranged symmetrically around the lighting device 7210. It can illuminate in all directions.

[0223] The lighting device 7220 shown in FIG. 12(E) has a light-emitting portion 7222 that is curved in a concave shape. Therefore, the light emitted from the light emitting unit 7222 is focused on the front surface of the lighting device 7220. It is suitable for brightly illuminating a range.

[0224] In addition, the light emitting devices 7200, 7210, and 7220 The light-emitting part is flexible, so it can be attached to parts such as plastic members and movable frames. The light emitting surface of the light emitting portion may be configured to be freely curved depending on the application.

[0225] Here, the illumination device in which the light-emitting unit is supported by the base is exemplified. The housing may be fixed to the ceiling or hung from the ceiling. The light surface can be curved, so the light-emitting surface can be curved concavely to brighten a specific area. The light source can be curved convexly to illuminate an entire room.

[0226] Here, each light-emitting section incorporates a touch panel according to an embodiment of the present invention. According to one embodiment, a lighting device having a curved light-emitting portion and high reliability can be provided with a high yield. Cut.

[0227] FIG. 12(F) shows an example of a portable touch panel. Touch panel 7300 7301, a display unit 7302, operation buttons 7303, a drawer member 7304, a control It has part 7305.

[0228] The touch panel 7300 is a flexible panel that is rolled up in a cylindrical housing 7301. It has a display unit 7102.

[0229] The touch panel 7300 can receive a video signal from the control unit 7305. The image can be displayed on the display unit 7302. The control unit 7305 is also It also has a terminal section for connecting a connector to the control section 7305, and can transmit video signals and power. may be supplied directly from the outside via a wire.

[0230] In addition, the operation button 7303 can be used to turn the power on and off and to switch the displayed image. It is possible to carry out such tasks.

[0231] FIG. 12G shows the tablet in a state where the display unit 7302 is pulled out by the pull-out member 7304. In this state, an image can be displayed on the display unit 7302. In addition, the operation button 7303 arranged on the surface of the housing 7301 allows for easy operation with one hand. In addition, as shown in FIG. 12(F), the operation button 7303 can be mounted inside the housing 7301. By placing it to one side rather than in the center, it can be easily operated with one hand.

[0232] When the display unit 7302 is pulled out, the display surface of the display unit 7302 is flat. To fix the display portion 7302, a frame for reinforcing the display portion 7302 may be provided on the side of the display portion 7302.

[0233] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is output.

[0234] The display portion 7302 includes a touch panel according to one embodiment of the present invention. According to this embodiment, lightweight and highly reliable touch panels can be provided with a high yield.

[0235] 13(A) to 13(C) show a foldable mobile information terminal 310. 13(B) shows the portable information terminal 310 in an unfolded state. 13(C) shows the mobile information terminal 310 in the process of changing from one of the states to the other. ) shows the portable information terminal 310 in a folded state. When unfolded, it is highly portable, and when unfolded, it has a seamless, large display area that allows you to see the entire display. Excellent visibility.

[0236] The display panel 316 is supported by three housings 315 connected by hinges 313. The two housings 315 are bent via the hinge 313, and the portable information terminal 3 10 can be reversibly transformed from the unfolded state to the folded state. A touch panel according to one embodiment can be used for the display panel 316. For example, a touch panel with a curvature radius of 1 m A touch panel that can be bent from 1 m to 150 mm can be applied.

[0237] In one aspect of the present invention, when the touch panel is in a folded or unfolded state, The touch panel may be configured to include a sensor that detects the touch state and supplies the detection information. The panel control unit receives information indicating that the touch panel is in a folded state. The movement of the folded part (or the part that is folded and not visible to the user) Specifically, the display may be stopped. You may stop learning.

[0238] Similarly, the touch panel control device indicates that the touch panel is in the deployed state. The information may be acquired and the display or detection by the touch sensor may be resumed.

[0239] 13(D) and (E) show a foldable mobile information terminal 320. The mobile information terminal 320 is shown in a folded state with the display unit 322 facing outward. (E) shows the portable information terminal 320 in a folded state with the display unit 322 facing inward. When the mobile information terminal 320 is not in use, the non-display section 325 is folded outward. This can prevent the display portion 322 from being soiled or scratched. It can be used for 2.

[0240] Fig. 13(F) is a perspective view illustrating the external shape of the mobile information terminal 330. 13(H) is a top view of the portable information terminal 330. FIG. 13(H) is a top view of the portable information terminal 340. FIG.

[0241] The portable information terminals 330 and 340 are selected from, for example, telephones, notebooks, information viewing devices, etc. It has one or more functions. Specifically, it can be used as a smartphone. can.

[0242] The mobile information terminals 330 and 340 can display text and image information on multiple surfaces. For example, three operation buttons 339 can be displayed on one surface (see FIG. 13(F)). H)). Also, the information 337 shown in the dashed rectangle can be displayed on another surface (see FIG. 13( G)(H)). An example of information 337 is SNS (social networking) Notifications of services, notifications of incoming e-mails and phone calls, etc. Subject, sender name of email, date and time, remaining battery level, antenna reception strength, etc. Or, instead of the information 337, an operation button is displayed at the position where the information 337 is displayed. In addition, in Fig. 13(F)(G), information is displayed on the upper side. However, one aspect of the present invention is not limited to this. For example, It may be displayed on the side, as in the mobile information terminal 340 shown in FIG. 13(H).

[0243] For example, the user of the mobile information terminal 330 may store the mobile information terminal 330 in a breast pocket of his / her clothes. When the item is stored, the display (information 337 in this example) can be confirmed.

[0244] Specifically, the telephone number or name of the caller of the incoming call is displayed on the mobile information terminal 330. The user takes the mobile information terminal 330 out of his pocket and You can check the display and decide whether to answer the call without having to turn your phone over.

[0245] The housing 335 of the portable information terminal 330 and the housing 336 of the portable information terminal 340 each have The touch panel of one embodiment of the present invention can be used for the display portion 333. This allows us to provide highly reliable touch panels with a curved display with a high yield. Cut.

[0246] In addition, even if information is displayed on three or more screens, as in the case of a portable information terminal 345 shown in FIG. 13(I), Here, information 355, information 356, and information 357 are displayed on different surfaces. Here is an example:

[0247] The display portion 358 of the housing 354 of the portable information terminal 345 includes a touch panel according to one embodiment of the present invention. According to one aspect of the present invention, a display device having a curved display portion and a reliable display panel can be used. This allows us to provide highly functional touch panels with a high yield. [Explanation of symbols]

[0248] 10 Touch Panel Module 20 Touch Sensor Module 21 PCB 22 Sensor element 23 circuits 24 circuits 25 Wiring 26 Wiring 30 Display Panel 31 PCB 32 Display section 33 pixels 34 circuits 41 FPC 42 FPC 43 terminals 110 Capacitor element 111 Conductive layer 111a Conductive layer 112 Insulating layer 113 Conductive Layer 114 Colored layer 114b Colored layer 114g colored layer 114r colored layer 115 Light blocking layer 116 Conductive layer 116a conductive layer 116b Conductive layer 116c conductive layer 116d conductive layer 116e conductive layer 116f conductive layer 116g conductive layer 117 Conductive Layer 117a Conductive layer 117b Conductive layer 119 Optical adjustment layer 131 gate electrode 132 Semiconductor layer 133a electrode 133b Electrode 201 Transistor 202 Transistor 203 Transistor 204 Light-emitting element 205 Contact part 210 Connection Layer 211 Adhesive layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 216 Insulating Layer 217 Insulating Layer 218 Insulating Layer 219 Spacer 220 Adhesive layer 221 Electrode 222 EL layer 223 Electrode 224 Optical adjustment layer 225 Conductive Layer 251 transistors 252 transistors 253 Contact part 260 Connection Layer 261 Adhesive layer 262 Insulating Layer 263 Insulating Layer 264 Insulating Layer 265 Insulating Layer 266 Insulating Layer 267 Insulating Layer 268 Insulating Layer 310 Mobile Information Terminals 313 Hinge 315 Case 316 Display Panel 320 Mobile Information Terminals 322 Display section 325 Hidden part 330 Mobile Information Terminals 333 Display section 335 Case 336 Case 337 Information 339 Operation Button 340 Mobile Information Terminals 345 Mobile Information Terminals 354 Case 355 Information 356 Information 357 Information 358 Display section 7100 Mobile Information Terminal 7101 Housing 7102 Display section 7103 Band 7104 Buckle 7105 Operation button 7106 Input / output terminal 7107 Icon 7200 Lighting Equipment 7201 Daibu 7202 Light-emitting part 7203 Operation switch 7210 Lighting equipment 7212 Light-emitting part 7220 Lighting equipment 7222 Light-emitting part 7300 Touch Panel 7301 Housing 7302 Display section 7303 Operation button 7304 Materials 7305 Control Unit 7400 mobile phone 7401 Housing 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Microphone

Claims

1. a light-emitting element and a touch sensor between a first substrate and a second substrate; having a pixel area, the pixel region includes the light-emitting element and the touch sensor, the light-emitting element has a pair of electrodes and a light-emitting layer between the pair of electrodes, the touch sensor includes a first conductive layer, a second conductive layer, and an insulating layer provided between the first conductive layer and the second conductive layer; the first conductive layer has a region located closer to the first substrate than the insulating layer; the second conductive layer has a region located closer to the second substrate than the insulating layer; a plurality of third conductive layers are provided on the same layer; a light-shielding layer is provided, the first conductive layer, the second conductive layer, and the insulating layer have regions located closer to the first substrate than the light-shielding layer; light from the light-emitting element is emitted toward the first substrate from a region where the light-blocking layer is not provided, the plurality of third conductive layers have regions located closer to the second substrate than the light-shielding layer; In the pixel region, the plurality of third conductive layers have regions overlapping with the light-shielding layer, a region of the third conductive layer that does not overlap with the light-blocking layer and that is in contact with a lower surface of the first conductive layer;

2. a light-emitting element and a touch sensor between a first substrate and a second substrate; having a pixel area, the pixel region includes the light-emitting element and the touch sensor, the light-emitting element has a pair of electrodes and a light-emitting layer between the pair of electrodes, the touch sensor includes a first conductive layer, a second conductive layer, and an insulating layer provided between the first conductive layer and the second conductive layer; the first conductive layer has a region located closer to the first substrate than the insulating layer; the second conductive layer has a region located closer to the second substrate than the insulating layer; a plurality of third conductive layers are provided on the same layer; a light-shielding layer is provided, the first conductive layer, the second conductive layer, and the insulating layer have regions located closer to the first substrate than the light-shielding layer; light from the light-emitting element is emitted toward the first substrate from a region where the light-blocking layer is not provided, the plurality of third conductive layers have regions located closer to the second substrate than the light-shielding layer; In the pixel region, the plurality of third conductive layers have regions overlapping with the light-shielding layer, When viewed from above, the third conductive layers are not visible in a region where they overlap with the light-shielding layer, a region of the third conductive layer that does not overlap with the light-blocking layer and that is in contact with a lower surface of the first conductive layer;

Images