Indication device

Abstract

To provide a display device with improved flexibility in the placement of touch electrodes. [Solution] Embodiments of this specification relating to a display device may include a substrate including a display area and a non-display area on the outer edge of the display area; a thin-film transistor on the substrate; a subpixel connected to the thin-film transistor; a sealing layer disposed on the subpixel; a first sensor electrode disposed on the sealing layer; an inter-touch insulating layer disposed on the first sensor electrode; and a second sensor electrode disposed on the inter-touch insulating layer and electrically connected to the first sensor electrode via a contact hole in the inter-touch insulating layer.

Description

Technical Field

[0001] This specification relates to a display device.

Background Art

[0002] Entering the era of informatization, the field of display devices that visually display electrical information signals has been rapidly developing, and research continues to develop performance such as thinning, weight reduction, and low power consumption for various display devices.

[0003] Exemplary display devices include a liquid crystal display (LCD), an electro-wetting display (EWD), and an organic light emitting display (OLED).

[0004] Among them, the electroluminescent display device is a self-emitting display device. Different from the liquid crystal display device, it does not require a separate light source and can be manufactured in a lightweight and thin form. In addition, the electroluminescent display device is not only advantageous in terms of power consumption due to low voltage driving, but also excellent in color expression, response speed, viewing angle, and contrast ratio (CR), and is expected to be utilized in various fields.

Summary of the Invention

Problems to be Solved by the Invention

[0005] Embodiments of this specification may provide a display device with improved freedom in arranging touch electrodes.

[0006] Embodiments of this specification may provide a display device with improved touch sensing performance.

Means for Solving the Problems

[0007] A display device according to the embodiments of this specification may include a substrate including a display area and a non-display area on the outer edge of the display area; a thin-film transistor on the substrate; subpixels connected to the thin-film transistor; a sealing layer disposed on at least one subpixel; a first sensor electrode formed in the same layer as a first sensor electrode layer on the sealing layer; an inter-touch insulating layer on the first sensor electrode layer; and a second sensor electrode formed in the same layer as a second sensor electrode layer on the inter-touch insulating layer, which is electrically connected to the first sensor electrode via a contact hole in the inter-touch insulating layer.

[0008] A display device according to the embodiments of this specification includes a substrate, a plurality of sensor electrodes, and a black matrix on the plurality of sensor electrodes, wherein the black matrix includes a first portion having a first width and a second portion having a second width greater than the first width, and the plurality of sensor electrodes include a first sensor electrode overlapping the first portion and a second sensor electrode overlapping the second portion, wherein the first sensor electrode may be positioned closer to the substrate than the second sensor electrode. [Effects of the Invention]

[0009] According to embodiments of this specification, a display device capable of reducing light-induced defects can be provided by including another touch sensor layer within the display area.

[0010] According to embodiments of this specification, a display device with design flexibility for the upper black matrix can be provided by applying an insulating layer between the touch sensor layers that can flatten the upper touch electrodes.

[0011] The effects described herein are not limited to those stated above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description. [Brief explanation of the drawing]

[0012] [Figure 1] This is a plan view of a display device according to one embodiment of this specification. [Figure 2]This is an exploded perspective view illustrating the arrangement structure of touch electrodes in a display device according to one embodiment of this specification. [Figure 3] This is a plan view showing the structure of a touch electrode arranged on a touch sensor layer in one embodiment of this specification. [Figure 4] Figure 3 is a magnified plan view of the touch sensor X1. [Figure 5] This is a cross-sectional view taken along the line A-A' shown in Figure 4. [Figure 6] This is a cross-sectional view taken along the line C-C' shown in Figure 4. [Figure 7] This is a cross-sectional view taken along the line B-B' shown in Figure 4. [Figure 8] This is a plan view of a display device according to one embodiment of this specification. [Figure 9] This is a plan view of a display device according to one embodiment of this specification. [Figure 10] This is a cross-sectional view taken along the line D-D' shown in Figure 8. [Figure 11] This is a cross-sectional view taken along the line E-E' shown in Figure 8. [Figure 12] This is a cross-sectional view taken along the line F-F' shown in Figure 8. [Modes for carrying out the invention]

[0013] Hereinafter, some embodiments of this specification will be described in detail with reference to illustrative drawings. In assigning reference numerals to components in each drawing, the same reference numerals may be used for the same components as far as possible, even if they are shown in other drawings. In describing this specification, if it is determined that a specific description of a related known configuration or function would obscure the gist of this disclosure, such detailed description will be omitted. Where "includes," "has," "consists of," etc., as used herein, other parts may be added unless "only" is used. When a component is expressed singularly, it may include multiple components unless otherwise explicitly stated.

[0014] In addition, when describing the components of this specification, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the components from other components, and the essence, order, sequence, number, etc. of the components are not limited by these terms.

[0015] In the description of the positional relationship of components, when it is described that two or more components are "connected", "coupled", or "joined", it should be understood that the two or more components may be directly "connected", "coupled", or "joined", but two or more components and other components may be further "interposed" and "connected", "coupled", or "joined". Here, the other components may be included in one or more of the two or more components that are "connected", "coupled", or "joined" to each other.

[0016] In the description of the relationship of the time flow regarding components, operating methods, manufacturing methods, etc., for example, when the time sequence relationship or the sequential relationship of the flow is described by "after ~", "subsequent to ~", "next to ~", "before ~", etc., it may include cases where it is not continuous unless "immediately" or "directly" is used.

[0017] On the other hand, when a numerical value regarding a component or its corresponding information (for example, level, etc.) is mentioned, even without a separate explicit description, the numerical value or its corresponding information can be interpreted as including the range of errors that may occur due to various factors (for example, process factors, internal or external impacts, noise, etc.).

[0018] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0019] FIG. 1 is a plan view of a display device according to an embodiment of this specification.

[0020] Referring to FIG. 1, a display device 100 according to an embodiment of this specification may include a substrate 110.

[0021] The substrate 110 may be configured to support various components included in the display device 100. The substrate 110 may be made of an insulating material. The substrate 110 may also be made of a transparent material. Furthermore, the substrate 110 may be a rigid substrate or a flexible substrate that can be bent, folded, rolled, etc. In addition, the substrate 110 may be made of glass or a flexible plastic material. For example, if the substrate 110 is made of polyimide (PI), a plastic material, the manufacturing process of the display device 100 may proceed with a support substrate made of glass placed below the substrate 110, and the support substrate may be released after the manufacturing process of the display device 100 is completed. If the substrate 110 is made of a bilayer of polyimide (PI), an insulating layer may be formed between the bilayer substrate 110. The insulating layer between the substrates 110 may include an inorganic material. For example, the insulating layer between the substrates 110 may include, but is not limited to, silicon oxide (SiOx) or silicon nitride (SiNx).

[0022] As shown in Figure 1, the substrate 110 of the display device 100 can be defined as a display area DA and a non-display area NA located on the outer edge of the display area DA, where no pixels P are placed. The non-display area NA is adjacent to the display area DA, but may be located outside of the display area DA.

[0023] The display area DA of the substrate 110 may be an area where pixels P are arranged and an image is displayed. Multiple subpixels SP1, SP2, and SP3 may be arranged in the display area DA, and multiple subpixels SP1, SP2, and SP3 may constitute a single pixel P.

[0024] For example, a single pixel P may include three or more subpixels SP that emit light of different wavelengths representing different colors. For example, in a display device 100 according to one embodiment of this specification, a single pixel P may include subpixels SP that emit red, green, and blue light. However, the number of subpixels SP included in a single pixel P is not limited, and for example, in addition to subpixels SP that emit red, green, and blue light, it may further include subpixels SP that emit white light.

[0025] The non-display area NA of the substrate 110 can be defined as a peripheral area surrounding the display area DA, a bending area BA extending from one side of the peripheral area and being bent, and a pad area PA extending from the bending area BA. Figure 2 shows the state of the substrate 110 before bending.

[0026] The non-display area NA of the substrate 110 is the area where various wirings, circuits, etc., for driving the subpixels SP1, SP2, and SP3 located in the display area DA are arranged. Since the non-display area NA is not the area where the image is displayed, it does not need to be visible from the front of the display device 100. As a result, a portion of the non-display area NA of the substrate 110 can be bent toward the back of the display device 100, for example, so that one end of the substrate 110 has a predetermined curvature. In this case, the pad area PA may be positioned so as to overlap with the display area DA on the back of the display device 100. This makes it possible to reduce the non-display area NA while securing the area for wiring and drive circuits.

[0027] If the substrate 110 includes polyimide (PI), which is a plastic material, and an insulating layer between the polyimide (PI), the insulating layer between the polyimide (PI) does not necessarily have to be placed in the bending region BA. For example, in the bending region BA, the substrate 110 does not have to include an insulating layer between the polyimide PI, and the insulating layer may be patterned. For example, if the bending region BA includes an insulating layer containing an inorganic material, stress may concentrate in the insulating layer containing the inorganic material, potentially causing cracks.

[0028] A pad portion 114 can be placed in the pad area PA of the substrate 110. The pad portion 114 may be a metal pattern to which an external module, such as an FPCB (flexible printed circuit board) or COF (chip on film), is bonded. In Figure 2, the pad portion 114 is shown to be placed on one side of the non-display area NA, but its form and placement are not limited thereto.

[0029] Furthermore, connection wiring 116 can be placed in a portion of the non-display area NA of the substrate 110. For example, connection wiring 116 can be placed in the peripheral area of ​​the substrate 110 adjacent to the bending area BA.

[0030] The connection wiring 116 can transmit signals (e.g., voltage) from an external module bonded to the pad portion 114 to a circuit portion such as a gate drive unit 112 included in the display area DA or gate driver. The gate drive unit 112 provides gate signals to thin-film transistors of the pixel drive circuit and includes various gate drive circuits. In a display device 100 according to one embodiment of this specification, such a gate drive unit 112 may be a GIP (Gate-In-Panel) in which the gate drive circuit is directly formed on the substrate 110.

[0031] Various signals and voltages, such as gate signals, data signals, high potential voltages, and low potential voltages, can be transmitted via the connection wiring 116. The connection wiring 116 can be divided into power connection wiring and / or signal connection wiring, etc., depending on the voltage and / or signal to be transmitted. In this case, the power connection wiring can transmit voltage supplied from an external module to the display area DA. The power connection wiring can be connected to, but is not limited to, low potential voltage wiring VSS, high potential voltage wiring VDD, gate low voltage wiring and / or gate high voltage wiring included in the gate drive unit 112. In addition, the signal connection wiring can transmit signals for video display supplied from an external module to the display area DA. The signal connection wiring can be connected to, but is not limited to, gate wiring and / or data wiring.

[0032] Furthermore, a dam 117 may be placed in the non-display area NA of the substrate 110 so as to surround all or part of the display area DA. In this case, the dam 117 is adjacent to the display area DA, but may also be placed outside of the display area DA. The dam 117 may be placed along the periphery of the display area DA in order to control the flow of the layer containing organic material among the sealing layers placed on the light-emitting element. The number of dams 117 may consist of one or more.

[0033] Furthermore, a crack detection wiring (Panel Crack Detector) 118 may be placed in one area of ​​the non-display area NA of the substrate 110. The crack detection wiring 118 may be placed between the endpoint (or end) of the substrate 110 and the dam 117. Alternatively, the crack detection wiring 118 may be placed below the dam 117, and may be positioned so as to overlap the dam 117 in at least a portion. The crack detection wiring 118 is placed on the outer casing of the display device 100 and can detect defects such as cracks that may occur in the outer casing.

[0034] Furthermore, a display device 100 according to one embodiment of this specification may further include a touch sensing unit including a plurality of touch electrodes, and a touch sensing circuit that supplies a touch drive signal to the touch sensing unit, detects a touch sensing signal from the touch sensing unit, and senses whether or not a user has touched the device and the touch position (or coordinates).

[0035] For example, a touch sensing circuit may include a touch drive circuit that supplies a touch drive signal to a touch sensing unit and detects a touch sensing signal from the touch sensing unit, and a touch controller that senses the presence and / or location of a user's touch based on the touch sensing signal detected by the touch drive circuit. The touch drive circuit and the touch controller may be implemented as separate components, or in some cases, they may be integrated and implemented as a single component.

[0036] One or more of the configurations for driving the display and one or more of the circuit configurations for touch sensing can also be functionally integrated and implemented as one or more components. For example, the data driver and the touch driver circuit may be integrated and implemented on one or more integrated circuit chips. When the data driver and the touch driver circuit are integrated and implemented on two or more integrated circuit chips, each of the two or more integrated circuit chips may have both data driving and touch driving functions.

[0037] Figure 2 is an exploded perspective view illustrating the arrangement structure of touch electrodes in a display device according to one embodiment of this specification.

[0038] Referring to Figure 2, a display device 100 according to one embodiment of this specification may include a substrate 110 on which a plurality of subpixels SP are arranged in a display area DA, and a touch electrode layer TSL disposed on the substrate 110 and including a plurality of touch electrodes TE. The display device 100 may also include a color filter layer CFL disposed on the touch electrode layer TSL and including a plurality of color filters and a black matrix between the color filters on a plane.

[0039] The display area DA of the substrate 110 is an area where multiple pixels are arranged to realize an image, and each pixel may include a light-emitting element 200 and multiple subpixels SP, each including a pixel driving circuit that controls the amount of current flowing to the light-emitting element 200. The pixel driving circuit may include multiple driving thin film transistors (TFTs).

[0040] In one embodiment of this specification, the description assumes that the display device 100 is an organic light-emitting display device, but is not limited thereto. For example, if the display device 100 is an organic light-emitting display device, the subpixel may include a light-emitting element 200 which includes an anode electrode, a light-emitting layer on the anode electrode, and a cathode electrode on the light-emitting layer. In this case, the light-emitting element 200 includes an organic light-emitting layer as the light-emitting layer, and together with the organic light-emitting layer may further include a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer. On the other hand, as another example, if the display device 100 is a liquid crystal display device, it may be configured to include a liquid crystal layer which is the display unit.

[0041] Referring to Figure 2, a pixel driving circuit for a subpixel SP according to one embodiment of this specification may include a driving transistor DT, a switching transistor ST, a capacitor Cst, gate wiring GL, data wiring DL, and wiring connected to power supplies VDD and VSS for pixel driving.

[0042] The light-emitting element 200 may operate to emit light in response to a drive current formed by the drive transistor DT. The switching transistor ST may switch in response to a gate signal supplied via the gate wiring GL, so that a data signal supplied via the data wiring DL is stored as a data voltage in the capacitor Cst. The drive transistor DT may operate in response to the data voltage stored in the capacitor Cst, so that a constant drive current flows between the high-potential power supply VDD and the low-potential power supply VSS.

[0043] In the above, as an example, a display device 100 according to one embodiment of this specification has been described in which a subpixel SP is composed of a 2T (Transistor) 1C (Capacitor) structure including one switching transistor ST, one driving transistor DT, and one capacitor Cst.

[0044] In another example, as shown in Figure 2, the subpixel may further include a compensation circuit 135.

[0045] The compensation circuit 135 is a circuit for compensating the threshold voltage of the drive transistor DT, and the compensation circuit 135 may include one or more thin-film transistors and capacitors. In this case, the configuration and structure of the compensation thin-film transistor and compensation capacitor are not limited and can vary depending on the compensation method. For example, when the compensation circuit 135 is added to a subpixel, it may have various structures such as 3T1C, 4T2C, 5T2C, 6T1C, 6T2C, 7T1C, 7T2C, etc.

[0046] Figure 3 is a plan view showing the structure of a touch electrode arranged in a touch electrode layer in one embodiment of this specification.

[0047] Referring to Figure 3, the display device 100 may include a plurality of touch electrodes TE and bridge electrodes BE1 and BE2 that electrically connect the sensor electrodes of the plurality of touch electrodes TE.

[0048] For example, as shown in Figure 3, each of the multiple touch electrodes TE may include a plurality of first touch electrodes TE1 extending in a first direction and a plurality of second touch electrodes TE2 extending in a second direction intersecting the first direction. In this case, the substrate 110 may further include a plurality of first touch routing wires connected to each of the plurality of first touch electrodes TE1, a plurality of second touch routing wires connected to each of the plurality of second touch electrodes TE2, and a plurality of touch pads connected to the plurality of first and second touch routing wires, respectively.

[0049] Each of the multiple first touch electrodes TE1 and the multiple second touch electrodes TE2 may include multiple touch sensors SE1, SE2, SE3, and SE4. In Figure 3, the second touch electrodes TE2 are shown to be a continuous configuration of sensor electrodes formed in a rhombic mesh pattern, but the sensor electrodes may have various shapes, such as triangles, squares, rhombuses, and polygons. For example, each of the first touch electrodes TE1 and the second touch electrodes TE2 may include multiple sensor electrodes patterned in a mesh.

[0050] Multiple sensor electrodes SE1, SE2, SE3, SE4 can be formed into a mesh pattern and may include an aperture OA. The aperture OA of the multiple sensor electrodes SE1, SE2, SE3, SE4 may overlap with the subpixel SP.

[0051] Multiple sensor electrodes SE1, SE2, SE3, and SE4 may be formed on different touch sensor electrode layers SEL1 and SEL2. For example, multiple sensor electrodes SE1, SE2, SE3, and SE4 may be formed on the first touch sensor layer SEL1 or the second touch sensor layer SEL2. The details of this will be described later.

[0052] The display device 100 may include a plurality of touch electrodes TE, as shown by X in Figure 3, and each of the plurality of touch electrodes TE may include a plurality of sensor electrodes SE, as shown by X1 in Figure 3.

[0053] A display device 100 according to one embodiment of this specification can sense touch using a capacitance-based touch sensing method, a mutual-capacitance-based touch sensing method, and a self-capacitance-based touch sensing method.

[0054] In a mutual capacitance-based touch sensing system, multiple touch electrodes TE can be classified into drive touch electrodes to which a touch drive signal is applied, and sensing touch electrodes to which a touch sensing signal is detected and which form a capacitance with the drive touch electrode. For example, the first touch electrode TE1 may be a sensing touch electrode to which a touch sensing signal is perceived, and in this case, the second touch electrode TE2 may be a drive touch electrode to which a touch drive signal is applied, but is not limited to this. That is, the first touch electrode TE1 may be a drive touch electrode, and the second touch electrode TE2 may be a sensing touch electrode.

[0055] In a self-capacitance-based touch sensing system, multiple touch electrodes TE serve as both driving and sensing touch electrodes. That is, the touch sensing circuit applies a touch driving signal to one or more touch electrodes TE, detects a touch sensing signal via the touch electrodes TE to which the touch driving signal is applied, and senses the presence or absence of a touch and / or touch coordinates by determining the change in capacitance between a finger, pen, or other pointer and the touch electrode TE based on the detected touch sensing signal. In a self-capacitance-based touch sensing system, there is no distinction between driving and sensing touch electrodes. For example, multiple first touch electrodes TE1 and multiple second touch electrodes TE2 can each serve as both driving and sensing touch electrodes.

[0056] The above describes an example of the structure of the sensor electrode of the first touch electrode TE1, but the sensor electrode of the second touch electrode TE2 may have a similar structure.

[0057] Figure 4 is a plan view of the sensor electrode X1 shown in Figure 3, magnified.

[0058] Referring to Figure 4, the display device 100 may include sensor electrodes SE. The sensor electrodes SE may include a first sensor electrode SE1, a second sensor electrode SE2, a third sensor electrode SE3, and a fourth sensor electrode SE4. The first sensor electrode SE1, the second sensor electrode SE2, the third sensor electrode SE3, and the fourth sensor electrode SE4 may be formed on subpixels SP or in a mesh configuration.

[0059] The shape of the first sensor electrode SE1 and the shape of the second sensor electrode SE2 may be the same. For example, the first sensor electrode SE1 and the second sensor electrode SE2 may both have a rhombus shape.

[0060] The size of the first sensor electrode SE1 region and the size of the second sensor electrode SE2 region can correspond to each other. The size of the first sensor electrode SE1 region and the size of the second sensor electrode SE2 region can correspond to the width of the opening of the first sensor electrode SE1 and the width of the opening of the second sensor electrode SE2, respectively.

[0061] A subpixel SP may include a first subpixel SP1, a second subpixel SP2, a third subpixel SP3, and a fourth subpixel SP4. For example, a first sensor electrode SE1 may correspond to the first subpixel SP1, a second sensor electrode SE2 to the second subpixel SP2, a third sensor electrode SE3 to the third subpixel SP3, and a fourth sensor electrode SE4 to the fourth subpixel SP4.

[0062] A black matrix BM can be formed on the sensor electrode SE. The black matrix BM may include multiple apertures corresponding to the light-emitting regions EA of multiple subpixels SP. For example, the aperture of the black matrix BM corresponding to the first subpixel SP1 may be the first light-emitting region EA1, the aperture of the black matrix BM corresponding to the second subpixel SP2 may be the second light-emitting region EA2, the aperture of the black matrix BM corresponding to the third subpixel SP3 may be the third light-emitting region EA3, and the aperture of the black matrix BM corresponding to the fourth subpixel SP4 may be the fourth light-emitting region EA4.

[0063] Multiple subpixels SP may have different pixel structures. For example, the first subpixel SP1 and the third subpixel SP3 may correspond to blue (B) subpixels. For example, the second subpixel SP2 and the fourth subpixel SP4 may correspond to red (R) subpixels.

[0064] A fifth subpixel SP5 may be arranged in a manner surrounded by a first subpixel SP1, a second subpixel SP2, a third subpixel SP3, and a fourth subpixel SP4. For example, the fifth subpixel SP5 may be arranged in a manner surrounded by a first sensor electrode SE1, a second sensor electrode SE2, a third sensor electrode SE3, and a fourth sensor electrode SE4. The opening of the black matrix BM corresponding to the fifth subpixel SP5 may be a fifth light-emitting region EA5. The fifth light-emitting region EA5 may be smaller than the first light-emitting region EA1, the second light-emitting region EA2, the third light-emitting region EA3, and the fourth light-emitting region EA4.

[0065] The first sensor electrode SE1 and the third sensor electrode SE3 may be formed from the first touch metal TM1, and the second sensor electrode SE2 and the fourth sensor electrode SE4 may be formed from the second touch metal TM2. The first touch metal TM1 may be formed in the same layer as the first sensor electrode layer SEL1, and the second touch metal TM2 may be formed in the same layer as the second sensor electrode layer SEL2.

[0066] The first subpixel SP1, the second subpixel SP2, the third subpixel SP3, and the fourth subpixel SP4 may each be surrounded by the same touch metal. For example, the first subpixel SP1 and the third subpixel SP3 may be surrounded by a first touch metal TM1 formed as the same layer as the first sensor electrode layer SEL1, and the second subpixel SP2 and the fourth subpixel SP4 may be surrounded by a second touch metal TM2 formed as the same layer as the second sensor electrode layer SEL2.

[0067] The fifth subpixel SP5 may be surrounded by different touch metals. For example, the fifth subpixel SP5 may be surrounded by a first touch metal TM1 formed as the same layer as the first sensor electrode layer SEL1, and a second touch metal TM2 formed as the same layer as the second sensor electrode layer SEL2.

[0068] Since multiple subpixels SP may have different pixel structures, the aperture of the black matrix BM may have different shapes depending on the light-emitting regions of the blue, green, and red subpixels, but is not limited to these. For example, the aperture of the black matrix BM may have different shapes depending on the light-emitting region EA. For example, the first subpixel SP1 may be larger than the second subpixel SP2. Therefore, the aperture of the black matrix BM corresponding to the first subpixel SP1 may be larger than the aperture of the black matrix BM corresponding to the second subpixel SP2, but is not limited to this.

[0069] The first sensor electrode SE1 and the second sensor electrode SE2 can be formed as different layers. For example, the first sensor electrode SE1 may be formed below the second sensor electrode SE2. For instance, the first sensor electrode SE1 can be formed in the first sensor electrode layer SEL1, and the second sensor electrode SE2 can be formed in the second sensor electrode layer SEL2. Details on how the sensor electrodes SE can be formed as different layers will be described later.

[0070] The first sensor electrode SE1 and the second sensor electrode SE2 may be connected to each other via a contact hole CNT. For example, the first sensor electrode SE1 and the second sensor electrode SE2 may be electrically connected to each other via a contact hole CNT.

[0071] The embodiments described herein have described the relationship between the first sensor electrode SE1 and the second sensor electrode SE2, but are not limited thereto. For example, the third sensor electrode SE3 and the fourth sensor electrode SE4 may be formed as different layers, and the third sensor electrode SE3 may be formed below the fourth sensor electrode SE4.

[0072] The effects of forming the first sensor electrode SE1 and the second sensor electrode SE2 as different layers will be described later.

[0073] Figure 5 is a cross-sectional view taken along the line A-A' shown in Figure 4, Figure 6 is a cross-sectional view taken along the line C-C' shown in Figure 4, and Figure 7 is a cross-sectional view taken along the line B-B' shown in Figure 4.

[0074] Referring to Figures 4 to 7, a display device 100 according to one embodiment of this specification can sequentially stack a substrate layer SUB, a transistor layer TRL on the substrate layer SUB, a planarization layer PLN on the transistor layer TRL, a light-emitting element layer EDL on the planarization layer PLN, a sealing layer ENCAP on the light-emitting element layer EDL, a touch sensor layer TSL on the sealing layer ENCAP, and a color filter layer CFL on the touch sensor layer TSL. In this case, a protective layer, an organic layer, a polarizing layer, a cover layer, etc., can be further arranged on top of the color filter layer CFL of the display device 100.

[0075] Figures 5 and 6 show two subpixels SP that emit light of different wavelengths as an example, among the multiple subpixels SP arranged in the display area DA. However, subpixels that emit light of other wavelengths may also have the same overall structure, differing only in the light output of the light-emitting stack constituting the light-emitting element 200.

[0076] The substrate layer SUB includes a substrate 110 that supports and protects the components of the display device located on top of it.

[0077] For example, if the substrate 110 is made of polyimide (PI), moisture may penetrate the polyimide (PI) substrate 110 and reach the thin-film transistor or light-emitting element, degrading the performance of the display device 100. To prevent such degradation of the display device 100's performance due to moisture permeation, the display device 100 according to one embodiment of this specification may use a double polyimide (PI) structure as the substrate 110.

[0078] For example, the substrate 110 may include a first substrate and a second substrate, each made of polyimide (PI), and an inorganic insulating layer formed between the first and second substrates. The inorganic insulating layer may consist of a single layer or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx). For example, silicon dioxide (SiO2) material can be used as the inorganic insulating layer, but is not limited to this, and may be formed as a bilayer of silicon dioxide (SiO2) and silicon nitride (SiNx). The inorganic insulating layer blocks moisture from penetrating to the upper part of the second substrate. Furthermore, when a charge is charged onto the first substrate, the inorganic insulating layer can block the charged charge from affecting the thin-film transistor 300 above it via the second substrate. In this way, by blocking the charge charged onto the lower polyimide (PI) via the inorganic insulating layer, the reliability of the product can be improved, and the process can be simplified and production costs can be reduced by eliminating the need for a separate metal layer placement process for charge blocking.

[0079] As shown in Figure 1, the substrate 110 may have different structures in the display area DA and the bending area BA. For example, the inorganic insulating layer between the first substrate and the second substrate may be patterned or removed in the bending area BA. If the inorganic insulating layer is placed in the bending area BA, stress due to bending may be concentrated, potentially causing cracks in the display device 100.

[0080] Furthermore, the substrate layer SUB may include a buffer layer 120 disposed on the substrate 110.

[0081] For example, the buffer layer 120 may include a multi-buffer layer placed on the substrate 110 and an active buffer layer placed on the multi-buffer layer. A metal layer that can function as a light shield may be further placed between the multi-buffer layer and the active buffer layer. Such a metal layer may be called a light shielding layer.

[0082] The transistor layer TRL may include a thin-film transistor 300 comprising a driving transistor and at least one switching transistor, as well as various patterns, various insulating films, and various metal patterns for forming at least one capacitor.

[0083] Referring to Figure 5, a thin-film transistor 300 can be placed on the buffer layer 120, and the thin-film transistor 300 may include an active layer 310, a gate electrode 330, a source electrode 350, and a drain electrode 370. In Figure 5, the drain electrode 370 of the thin-film transistor 300 is shown to be electrically connected to the anode electrode 210 of the light-emitting element 200, which will be described below, but this is not limited to this. That is, depending on the design of the pixel driving circuit, the source electrode 350 can be the drain electrode, and the drain electrode 370 can be the source electrode.

[0084] The active layer 310 of the thin-film transistor 300 may include a channel region where a channel is formed when the thin-film transistor 300 is driven, source regions on both sides of the channel region, and drain regions. The source region of the active layer 310 is connected to the source electrode 350, and the drain region is connected to the drain electrode 370. For example, the source region and drain region may be formed by ion doping (impurity doping) of the active layer 310. In this case, the source region and drain region can be generated by ion doping of the polysilicon material, and the channel region may, but is not limited to, the portion of the polysilicon material that remains undoped.

[0085] A gate insulating layer 130 is placed on the active layer 310. The gate insulating layer 130 may be placed over the entire substrate 110, including the active layer 310. For example, the gate insulating layer 130 may consist of a single layer or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx). Contact holes may be formed in the gate insulating layer 130 for connecting the source electrode 350 and drain electrode 370 of the thin-film transistor 300 to the source region and drain region of the active layer 310 of the thin-film transistor 300, respectively.

[0086] The gate electrode 330 of the thin-film transistor 300 is positioned on the gate insulating layer 130. For example, the gate electrode 330 may be formed from a single layer or multilayer made of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), and neodymium (Nd), or an alloy thereof. The gate electrode 330 may be formed on the gate insulating layer 130 so as to overlap with the channel region of the active layer 310 of the thin-film transistor 300.

[0087] An interlayer insulating layer 140 is placed on the gate electrode 330. For example, the interlayer insulating layer 140 may consist of a single layer or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx). Contact holes may be formed in the interlayer insulating layer 140 to expose the source region and drain region of the active layer 310 of the thin-film transistor 300.

[0088] An inorganic layer 150 may be placed on the interlayer insulating layer 140. The inorganic layer 150 may be a passivation layer for protecting the thin-film transistor 300, or it may be omitted. For example, the inorganic layer 150 may be composed of silicon oxide (SiOx), silicon nitride (SiNx), or a composite of the two.

[0089] The planarization layer PLN is provided with a planarization layer 160 consisting of at least one layer. The planarization layer 160 may be an organic layer for planarizing and protecting the top of the thin-film transistor 300. For example, the planarization layer 160 can be formed from an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0090] In the embodiments described herein, the planarization layer 160 is shown to be a single layer, but is not limited thereto. For example, the planarization layer 160 may be formed as a double or triple layer. When the planarization layer 160 is formed as a double or triple layer, a metal layer may be formed between each planarization layer 160. The metal layer between each planarization layer 160 may electrically connect the lower transistor layer TRL and the upper light-emitting element layer EDL via contact holes. The metal layer between each planarization layer 160 may be, but is not limited thereto, a connecting electrode.

[0091] The light-emitting element layer EDL contains a light-emitting element 200, which includes an anode electrode 210, a light-emitting layer 220, and a cathode electrode 230. The light-emitting element layer EDL may also contain banks 400 that demarcate the light-emitting regions of multiple subpixels SP.

[0092] The anode electrode 210 of the light-emitting element 200 is positioned on the planarization layer 160. The anode electrode 210 can be formed of a metallic material and can be electrically connected to the thin-film transistor 300 through contact holes provided in the planarization layer 160. For example, if the display device 100 according to one embodiment of this specification is a top-emission type, the light emitted from the light-emitting element 200 is emitted onto the top of the substrate 110, in which case the anode electrode 210 may further include a transparent conductive layer and a reflective layer on the transparent conductive layer. For example, the transparent conductive layer may be composed of a transparent conductive oxide such as ITO or IZO, and the reflective layer may be composed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof.

[0093] Bank 400 is positioned to cover both ends of the anode electrode 210, leaving a portion of the anode electrode 210 exposed. For example, Bank 400 may be composed of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or an organic insulating material such as a benzocyclobutene resin, an acrylic resin, or an imide resin, but is not limited to these. Bank 400 may also contain a black pigment or a black organic material. For example, Bank 400 may be a black bank.

[0094] Further spacers can be placed on top of the Bank 400.

[0095] The light-emitting material layer 220 of the light-emitting element 200 may be placed on the anode electrode 210. The light-emitting material layer 220 may include a plurality of organic films. The cathode electrode 230 may be placed on the light-emitting material layer 220 of the light-emitting element 200.

[0096] An encapsulation layer 500 having a single-layer or multilayer structure is arranged on the encapsulation layer ENCAP on the light-emitting element layer EDL. For example, as shown in Figure 5, the encapsulation layer may include a first encapsulation layer 510, a second encapsulation layer 520, and a third encapsulation layer 530. In this case, the first encapsulation layer 510 and the third encapsulation layer 530 may be composed of inorganic films, and the second encapsulation layer 520 may be composed of an organic film. Of the first encapsulation layer 510, the second encapsulation layer 520, and the third encapsulation layer 530, the second encapsulation layer 520 is the thickest and can serve as a planarization layer.

[0097] The first sealing layer 510 can be positioned as close as possible to the light-emitting element 200. That is, the first sealing layer 510 can be positioned on the cathode electrode 230 of the light-emitting element 220. The first sealing layer 510 can be formed from an inorganic insulating material that can be deposited at low temperatures. For example, the first sealing layer 510 can be made of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3). Since the first sealing layer 510 is deposited in a low-temperature atmosphere, damage to the light-emitting element 200, which contains organic material that is vulnerable to high-temperature atmospheres, can be prevented during the deposition process.

[0098] The second sealing layer 520 may be formed in a smaller area than the first sealing layer 510. In this case, the second sealing layer 520 may be formed so as to expose both ends of the first sealing layer 510. The second sealing layer 520 can play a buffering role in easing the stress between layers due to the warping of the flexible display device, and can also play a role in enhancing the planarization performance. For example, the second sealing layer 520 may be made of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbon (SiOC). For example, the second sealing layer 520 may be formed by an inkjet method, but is not limited thereto.

[0099] The third sealing layer 530 may be formed on the substrate 110 on which the second sealing layer 520 is formed, so as to cover the upper and side surfaces of the second sealing layer 520 and the first sealing layer 510, respectively. In this case, the third sealing layer 530 can reduce or block the penetration of external moisture and oxygen into the first sealing layer 510 and the second sealing layer 520. For example, the third sealing layer 530 may be made of an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al2O3).

[0100] In this specification, the first sealing layer 510 and the third sealing layer 530 are shown as being composed of single layers, but are not limited thereto. For example, the first sealing layer 510 and the third sealing layer 530 may be formed as a multilayer containing silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiON). Furthermore, the first sealing layer 510 and the third sealing layer 530 may have different numbers of layers and different thicknesses. For example, the first sealing layer 510 may be thicker than the third sealing layer 530.

[0101] As shown in Figure 1, at least one dam 117 that blocks the flow of the second sealing layer 520 of the sealing layer 500 may be placed in the non-display area NA.

[0102] At least one dam 117 may be formed to include at least one of a bank 400 and a spacer. For example, at least one dam 117 may include a bank 400, where the bank 400 may be a black bank containing black pigment.

[0103] A touch insulating layer 600, which includes an insulating film for arranging a touch sensing portion, may be placed on the sealing layer 500.

[0104] The touch buffer layer 610 can prevent damage to the light-emitting layer 220, which is vulnerable to chemicals or moisture. During the formation of the touch sensor layer TSL, chemicals used in the process (such as developer or etching solution) or moisture from the outside may be generated. By placing the touch buffer layer 610 and the touch sensing part on top of it, it is possible to prevent chemicals or moisture during the manufacturing process of the touch sensing part from penetrating into the light-emitting material layer 220, which contains organic matter. Furthermore, the touch buffer layer 610 can prevent damage to the light-emitting material layer 220, which contains organic matter, which is vulnerable to high temperatures. In this case, the touch buffer layer 610 can be formed at a low temperature below a certain temperature (e.g., 100°C) and can be formed from an organic insulating material having a low dielectric constant of 1 to 3. For example, the touch buffer layer 610 can be formed from an acrylic, epoxy, or siloxane-based material. In this way, the touch buffer layer 610 is composed of an organic insulating material and can prevent damage to the sealing layer ENCAP due to warping of the flexible display device.

[0105] A touch interlayer insulating layer 620 may be formed on the touch buffer layer 610. The touch interlayer insulating layer 620 may contain an organic material. For example, the touch interlayer insulating layer 620 may be an organic layer made of an organic material, but is not limited thereto. For example, the touch interlayer insulating layer 620 may be an inorganic layer made of an inorganic material. Since the touch interlayer insulating layer 620 is formed of an organic material, it may be thicker than the first sealing layer 510 or the third sealing layer 530.

[0106] A protective layer 630 may be formed on the intertouch insulating layer 620. For example, the protective layer 630 may be an inorganic layer made of an inorganic material. The intertouch insulating layer 620 may be thicker than the protective layer 630.

[0107] The protective layer 630 prevents damage to the electrodes of the touch-sensing part from chemicals (such as developer) or moisture used in the upper layer process.

[0108] The color filter layer CFL on the touch sensor layer TSL has multiple color filters 720 and a black matrix BM that is positioned between the multiple color filters 720 on a plane.

[0109] Color filters 720_A, 720_B, and black matrix BM can be placed on the protective layer 630.

[0110] A black matrix BM can be placed on the protective layer 630 so as to overlap with the bank 400, and multiple color filters 720 can be placed so as to overlap with the openings of the black matrix BM. The color filters 720 reduce the visibility of external light that is reflected after it enters the bank 400, etc., while not blocking the light emitted from the light-emitting element 200 and maintaining light efficiency. The black matrix BM is positioned so as to overlap with the edge of the light-emitting area of ​​the light-emitting element 200, absorbing the incident external light and reducing the amount of external light entering the light-emitting area, preventing the visibility of reflected light from external light. If the bank 400 contains black material, the reflection of external light incident from the outside can be reduced.

[0111] A touch sensor layer TSL may be placed on the sealing layer ENCAP. The touch sensor layer TSL may include a first sensor electrode layer SEL1 and a second sensor electrode layer SEL2 on the first sensor electrode layer SEL1.

[0112] Referring to Figure 5, the first sensor electrode SE1 may be formed as the same layer as the first sensor electrode layer SEL1. The first sensor electrode layer SEL1 may be formed between the touch buffer layer 610 and the intertouch insulating layer 620.

[0113] On the other hand, referring to Figure 6, the second sensor electrode SE2 can be formed as the same layer as the second sensor electrode layer SEL2. The second sensor electrode layer SEL2 can be formed between the intertouch insulating layer 620 and the protective layer 630.

[0114] Referring to both Figures 5 and 6, a black matrix BM can be formed on the first sensor electrode SE1 and the second sensor electrode SE2. The black matrix BM can be formed superimposed on the first sensor electrode SE1 and the second sensor electrode SE2.

[0115] As shown in Figure 6, if external light is reflected through the second sensor electrode SE2, the black matrix BM may be damaged by the reflected ambient light. For example, if the black matrix BM does not contain a margin outside the area overlapping with the second sensor electrode SE2 during the exposure and patterning process, the black matrix BM may over-harden due to the reflected ambient light, resulting in undercuts.

[0116] The first sensor electrode SE1 is formed as the same layer as the first sensor electrode layer SEL1, and the first sensor electrode SE1 may be positioned at a distance corresponding to that of the black matrix BM and the intertouch insulating layer 620. On the other hand, the second sensor electrode SE2 is formed as the same layer as the second sensor electrode layer SEL2, and the second sensor electrode SE2 is formed on the intertouch insulating layer 620, and does not necessarily have to be positioned at a distance corresponding to that of the black matrix BM and the intertouch insulating layer 620.

[0117] As the second sensor electrode SE2 becomes more adjacent to the black matrix BM than the first sensor electrode SE1, it is preferable that when the touch electrode is formed with the second sensor electrode SE2 formed in the second sensor electrode layer SEL2, it is preferable to have a larger margin of the black matrix BM compared to when the touch electrode is formed with the first sensor electrode SE1 formed in the first sensor electrode layer SEL1.

[0118] The display device according to this specification can increase the design flexibility of the black matrix BM by including both the second sensor electrode SE2 in the second sensor electrode layer SEL2 and the first sensor electrode SE1 in the first sensor electrode layer SEL1 in the sensor electrodes that form the touch electrodes.

[0119] Furthermore, the display device according to this specification can minimize the margin of the black matrix BM and widen the aperture of the black matrix BM by including a sensor electrode in the first sensor electrode layer SEL1, thereby increasing the luminous efficiency.

[0120] For example, the width of the black matrix corresponding to the first sensor electrode SE1 formed in the first sensor electrode layer SEL1 may be smaller than the width of the black matrix corresponding to the second sensor electrode SE2 formed in the second sensor electrode layer SEL2.

[0121] In other words, the overlap ratio between the first sensor electrode SE1 and the corresponding black matrix may be greater than the overlap ratio between the second sensor electrode SE2 and the corresponding black matrix.

[0122] The overlap ratio between the sensor electrode and the corresponding black matrix can be defined as (width of the sensor electrode) / (width of the black matrix corresponding to the sensor electrode).

[0123] As another example, the black matrix BM may include a first portion that overlaps with the first sensor electrode SE1 and the third sensor electrode SE3, and a second portion that overlaps with the second sensor electrode SE2 and the fourth sensor electrode.

[0124] The length of the first portion where the first sensor electrode SE1 and the third sensor electrode SE3 overlap with the black matrix BM is called the first width, and the length of the second portion where the second sensor electrode SE2 and the fourth sensor electrode SE4 overlap with the black matrix BM is called the second width.

[0125] In this case, for example, the first width may be smaller than the second width.

[0126] In other words, the overlap ratio of the black matrix in the first half can be defined as (the width of the first half) / (the width of the black matrix corresponding to the sensor electrode).

[0127] Referring to Figure 7, the second sensor electrode SE2 and the fourth sensor electrode SE4 may be electrically connected via the third sensor electrode SE3. The third sensor electrode SE3 may be formed from the first touch metal TM1, and the second sensor electrode SE2 and the fourth sensor electrode SE4 may be formed from the second touch metal TM2.

[0128] Referring to Figure 7, an inter-touch insulating layer 620 may be formed between the second sensor electrode SE2 and the third sensor electrode SE3. An inter-touch insulating layer 620 may also be formed between the fourth sensor electrode SE4 and the third sensor electrode SE3. The second sensor electrode SE2 and the third sensor electrode SE3 may be electrically connected by contact holes formed in the inter-touch insulating layer 620. The fourth sensor electrode SE4 and the third sensor electrode SE3 may be electrically connected by other contact holes formed in the inter-touch insulating layer 620. The second sensor electrode SE2 and the fourth sensor electrode SE4 may be formed from a second sensor electrode layer SEL2 made of a second touch metal TM2, and the third sensor electrode SE3 may be formed from a first sensor electrode layer SEL1 made of a first touch metal TM1.

[0129] Figure 8 is a plan view of a display device according to one embodiment of this specification.

[0130] Figure 9 is a plan view of a display device according to one embodiment of this specification.

[0131] Referring to Figures 8 and 9, the display device 100 may include a touch routing line TL located on the outer edge of the display area DA. The touch routing line TL may be located in the non-display area NA. The touch routing line TL may include a lower touch routing line TL1 and an upper touch routing line TL2.

[0132] The lower touch routing line TL1 can be formed as the same layer as the first sensor electrode layer SEL1, and the upper touch routing line TL2 can be formed as the same layer as the second sensor electrode layer SEL2.

[0133] Referring to Figure 8, a first sensor electrode SE1 and a third sensor electrode SE3, formed as the same layer as the first sensor electrode layer SEL1, can be placed in the first light-emitting region EA1 corresponding to the first subpixel SP1 and the third light-emitting region EA3 corresponding to the third subpixel SP3, respectively.

[0134] As shown in Figure 3, the touch electrode TE may be composed of multiple sensor electrodes SE. The first sensor electrode SE1 and the second sensor electrode SE2 may be connected to the same touch routing line TL. For example, when the first sensor electrode SE1 is formed in the same layer as the first sensor electrode layer SEL1 and the second sensor electrode SE2 is formed in the same layer as the second sensor electrode layer SEL2, the touch routing line TL can connect the first sensor electrode SE1 to the same layer as the first sensor electrode layer SEL1, and the second sensor electrode SE2 to the same layer as the second sensor electrode layer SEL2. For example, the touch routing line TL may include a lower touch routing line TL1 and an upper touch routing line TL2. For example, the touch routing line TL may be a dual routing line. The detailed connection structure between the touch routing line and the touch electrode will be described later.

[0135] Referring to Figure 9, the lower routing line TL1 may be formed as the same layer as the first sensor electrode layer SEL1. The lower routing line TL1 may be formed together with the first sensor electrode SE1 and the third sensor electrode SE3. The first sensor electrode SE1 may be connected to the touch routing line TL and the first sensor electrode layer SEL1. For example, the first sensor electrode SE1 may be connected to the lower routing line TL1 and the first sensor electrode layer SEL1, and the second sensor electrode SE2 may be connected to the upper routing line TL2 and the second sensor electrode layer SEL2. In other words, the first sensor electrode SE1 may be connected to the touch routing line TL and the first sensor electrode layer SEL1, and the second sensor electrode SE2 may be connected to the touch routing line TL and the second sensor electrode layer SEL2.

[0136] Figure 10 is a cross-sectional view taken along the line D-D' shown in Figure 8, Figure 11 is a cross-sectional view taken along the line E-E' shown in Figure 8, and Figure 12 is a cross-sectional view taken along the line F-F' shown in Figure 8.

[0137] Referring to Figures 10 to 12, the touch sensor layer TSL may include a touch buffer layer 610, a first sensor electrode layer SEL1, an inter-touch insulating layer 620, a second sensor electrode layer SEL2, and a protective layer 630.

[0138] Referring to Figures 10 to 12, the touch routing line TL may have a dual wiring structure including a lower touch routing line TL1 and an upper touch routing line TL2. The lower touch routing line TL1 and the upper touch routing line TL2 may be electrically connected.

[0139] Referring to Figure 10, line D-D' is a cut line in the cross-sectional view of the region where the second sensor electrode SE2 and the second touch routing line TL2 are connected. As an example, the second sensor electrode SE2 and the upper touch routing line TL2 may be connected by the second sensor electrode layer SEL2. As another example, the second sensor electrode SE2 and the upper touch routing line TL2 may be integrally formed by the second sensor electrode layer SEL2. The second sensor electrode layer SEL2 may be between the intertouch insulating layer 620 and the protective layer 630.

[0140] Referring to Figure 11, line E-E' is a cut line in the cross-sectional view of the region where the first sensor electrode SE1 and the lower touch routing line TL1 are connected. As an example, the first sensor electrode SE1 and the lower touch routing line TL1 may be connected by the first sensor electrode layer SEL1. As another example, the first sensor electrode SE1 and the lower touch routing line TL1 may be integrally formed by the first sensor electrode layer SEL1. The first sensor electrode layer SEL1 may be between the touch buffer layer 610 and the intertouch insulating layer 620. An upper touch routing line TL2 formed by the second sensor electrode layer SEL2 may be placed on the lower touch routing line TL1 formed by the first sensor electrode layer SEL1. The first touch routing line TL1 formed by the first sensor electrode layer SEL1 and the second touch routing line TL2 formed by the second sensor electrode layer SEL2 may be electrically connected via holes in the intertouch insulating layer 620.

[0141] Referring to Figure 12, line F-F' is a cut line in the cross-sectional view of the touch routing line TL. As previously mentioned, the touch routing line TL may include a lower touch routing line TL1 and an upper touch routing line TL2. The lower touch routing line TL1 and the upper touch routing line TL2 may be formed with a touch interlayer insulating layer 620 between them. The lower touch routing line TL1 and the upper touch routing line TL2 may be connected to each other via contact holes formed in the touch interlayer insulating layer 620. For example, the touch routing line TL may be a double layer.

[0142] A display device according to the embodiments of this specification may include a substrate having a display area and a non-display area surrounding the display area; a thin-film transistor on the substrate; a subpixel connected to the thin-film transistor; a sealing layer disposed on the subpixel; a first sensor electrode disposed on the sealing layer; a touch-interlayer insulating layer disposed on the first sensor electrode; and a second sensor electrode disposed on the touch-interlayer insulating layer and electrically connected to the first sensor electrode via a contact hole in the touch-interlayer insulating layer.

[0143] According to one or more embodiments of this specification, the size of the first sensor electrode region and the size of the second sensor electrode region may correspond to each other. In one example, the sizes of the first sensor electrode region and the second sensor electrode region may be equal to each other. In another example, the difference between the sizes of the first sensor electrode region and the second sensor electrode region may be within a predetermined value. This may mean that even if the first sensor electrode and the second sensor electrode are located in different metal layers, the first sensor electrode and the second sensor electrode may constitute a substantial touch sensor that forms capacitance for touch sensing.

[0144] According to one or more embodiments of this specification, the shape of the first sensor electrode and the shape of the second sensor electrode may be the same.

[0145] According to one or more embodiments of this specification, the sealing layer includes a first sealing layer, a second sealing layer on the first sealing layer, and a third sealing layer on the second sealing layer, wherein the first and third sealing layers include an inorganic material, and the thickness of the intertouch insulating layer may be greater than the thickness of the first and third sealing layers.

[0146] According to one or more embodiments of the specification, the intertwined insulating layer may include an organic material.

[0147] According to one or more embodiments of this specification, the system further includes banks for partitioning subpixels, the banks may include black banks.

[0148] According to one or more embodiments of this specification, a third sensor electrode disposed at a distance from the first sensor electrode and a fourth sensor electrode disposed at a distance from the second sensor electrode may be further included. The first and third sensor electrodes may be formed as a first sensor electrode layer. The second and fourth sensor electrodes may be formed as a second sensor electrode layer. That is, the first and third sensor electrodes may be arranged within the first sensor electrode layer, and the second and fourth sensor electrodes may be arranged within the second sensor electrode layer.

[0149] According to one or more embodiments of this specification, the first to fourth sensor electrodes may be electrically connected to form a single mesh-like touch electrode.

[0150] According to one or more embodiments of this specification, the subpixel includes a first subpixel surrounded by a first sensor electrode, a second subpixel surrounded by a second sensor electrode, a third subpixel surrounded by a third sensor electrode, and a fourth subpixel surrounded by a fourth sensor electrode, wherein the first to fourth subpixels may correspond to a first to fourth light-emitting region, respectively.

[0151] According to one or more embodiments of this specification, a fifth subpixel surrounded by first to fourth sensor electrodes may further be included, the fifth subpixel corresponding to a fifth light-emitting region.

[0152] According to one or more embodiments of this specification, the size of the fifth light-emitting region may be smaller than the size of each of the first to fourth light-emitting regions.

[0153] According to one or more embodiments of this specification, a black matrix on the second sensor electrode layer may further be included.

[0154] According to one or more embodiments of this specification, the black matrix has a first width in the first portion overlapping with the first and third sensor electrodes, and a second width in the second portion overlapping with the second and fourth sensor electrodes, and the first width may be smaller than the second width.

[0155] According to one or more embodiments of this specification, the overlap ratio of the black matrices of the first portion may be greater than the overlap ratio of the black matrices of the second portion.

[0156] According to one or more embodiments of this specification, the system further includes a touch routing line electrically connected to a first sensor electrode and a second sensor electrode, the touch routing line may include the same layer as at least one of the first sensor electrode layer and the second sensor electrode layer.

[0157] A display device according to the embodiments of this specification includes a substrate, a plurality of sensor electrodes, and a black matrix on the plurality of sensor electrodes, wherein the black matrix includes a first portion having a first width and a second portion having a second width greater than the first width, and the plurality of sensor electrodes include a first sensor electrode overlapping the first portion and a second sensor electrode overlapping the second portion, wherein the first sensor electrode may be positioned closer to the substrate than the second sensor electrode.

[0158] According to one or more embodiments of this specification, the size of the first sensor electrode region and the size of the second sensor electrode region may correspond to each other.

[0159] According to one or more embodiments of this specification, the shape of the first sensor electrode and the shape of the second sensor electrode may be the same.

[0160] According to one or more embodiments of this specification, the sensor electrode further includes an intertouch insulating layer between a first sensor electrode and a second sensor electrode, the intertouch insulating layer may include an organic material.

[0161] According to one or more embodiments of this specification, the sensor electrode further includes a third sensor electrode disposed at a distance from the first sensor electrode and a fourth sensor electrode disposed at a distance from the second sensor electrode, wherein the third sensor electrode is disposed in the same layer as the first sensor electrode and the fourth sensor electrode is disposed in the same layer as the second sensor electrode.

[0162] According to one or more embodiments of this specification, the first to fourth sensor electrodes may be electrically connected to form a single mesh-like touch electrode.

[0163] According to one or more embodiments of this specification, the subpixels between the substrate and the black matrix further include a first subpixel surrounded by a first sensor electrode, a second subpixel surrounded by a second sensor electrode, a third subpixel surrounded by a third sensor electrode, and a fourth subpixel surrounded by a fourth sensor electrode, where the first to fourth subpixels may correspond to a first to fourth light-emitting region, respectively.

[0164] According to one or more embodiments of this specification, a fifth subpixel surrounded by first to fourth sensor electrodes may further be included, the fifth subpixel corresponding to a fifth light-emitting region.

[0165] According to one or more embodiments of this specification, the size of the fifth light-emitting region may be smaller than the size of each of the first to fourth light-emitting regions.

[0166] According to one or more embodiments of this specification, the overlap ratio of the black matrices of the first portion may be greater than the overlap ratio of the black matrices of the second portion.

[0167] According to one or more embodiments of this specification, the system further includes a touch routing line electrically connected to a first sensor electrode and a second sensor electrode, the touch routing line being located on the same layer as at least one of the first sensor electrode and the second sensor electrode.

[0168] The above description is merely illustrative of the technical concept of this specification, and any person with ordinary skill in the art to which this specification belongs will be able to make various modifications and alterations without departing from the essential characteristics of this specification. Furthermore, the embodiments shown herein are for illustrative purposes only and not to limit the technical concept of this specification, and therefore the scope of the technical concept of this specification is not limited by these embodiments. [Explanation of symbols]

[0169] 100 display device DA display area SE1 First recovery electrode EA1 First light-emitting region SP1 First subpixel BM Black Matrix 620 Interlayer insulating layer

Claims

1. A substrate including a display area and a non-display area located outside the display area, The thin-film transistor on the aforementioned substrate, A subpixel connected to the thin-film transistor, A sealing layer disposed on the subpixel, A first sensor electrode is disposed on the sealing layer, A touch-layer insulating layer disposed on the first sensor electrode, A display device characterized by including a second sensor electrode disposed on the inter-touch insulating layer and electrically connected to the first sensor electrode via a contact hole in the inter-touch insulating layer.

2. The display device according to claim 1, characterized in that the size of the region of the first sensor electrode corresponds to the size of the region of the second sensor electrode.

3. The display device according to claim 1, characterized in that the shape of the first sensor electrode and the shape of the second sensor electrode are the same.

4. The sealing layer is The first sealing layer, The second sealing layer on the first sealing layer, Including a third sealing layer on the second sealing layer, The first sealing layer and the third sealing layer comprise an inorganic material. The display device according to claim 1, characterized in that the thickness of the inter-touch insulating layer is greater than the thickness of the first sealing layer and the thickness of the third sealing layer.

5. The display device according to claim 4, characterized in that the inter-touch insulating layer contains an organic material.

6. The display device according to claim 1, further comprising a bank for partitioning the subpixels, wherein the bank includes a black bank.

7. The system further includes a third sensor electrode positioned at a distance from the first sensor electrode, and a fourth sensor electrode positioned at a distance from the second sensor electrode, The first sensor electrode and the third sensor electrode are formed from the first sensor electrode layer. The display device according to claim 1, characterized in that the second sensor electrode and the fourth sensor electrode are formed from the second sensor electrode layer.

8. The display device according to claim 7, characterized in that the first to fourth sensor electrodes are electrically connected to form a single mesh-like touch electrode.

9. The aforementioned subpixel is, The first subpixel surrounded by the first sensor electrode, The second subpixel surrounded by the second sensor electrode, The third subpixel surrounded by the third sensor electrode, Including a fourth subpixel surrounded by the fourth sensor electrode, The display device according to claim 7, characterized in that the first to fourth subpixels each correspond to a first light-emitting region to a fourth light-emitting region.

10. The display device according to claim 9, further comprising a fifth subpixel surrounded by the first to fourth sensor electrodes, wherein the fifth subpixel corresponds to a fifth light-emitting region.

11. The display device according to claim 10, characterized in that the size of the fifth light-emitting region is smaller than the size of each of the first to fourth light-emitting regions.

12. The display device according to claim 7, further comprising a black matrix on the second sensor electrode layer.

13. The display device according to claim 12, wherein the black matrix has a width of 1 in the first portion overlapping with the first sensor electrode and the third sensor electrode, and a second width in the second portion overlapping with the second sensor electrode and the fourth sensor electrode, and the first width is smaller than the second width.

14. The display device according to claim 13, characterized in that the overlap ratio of the black matrix of the first portion is greater than the overlap ratio of the black matrix of the second portion.

15. The display device according to claim 7, further comprising a touch routing line electrically connected to the first sensor electrode and the second sensor electrode, wherein the touch routing line includes the same layer as at least one of the first sensor electrode layer and the second sensor electrode layer.

16. circuit board and Multiple sensor electrodes, The black matrix on the plurality of sensor electrodes, The black matrix includes a first portion having a first width and a second portion having a second width greater than the first width. The plurality of sensor electrodes include a first sensor electrode that overlaps with the first portion and a second sensor electrode that overlaps with the second portion. The display device is characterized in that the first sensor electrode is positioned closer to the substrate than the second sensor electrode.

17. The display device according to claim 16, characterized in that the size of the region of the first sensor electrode corresponds to the size of the region of the second sensor electrode.

18. The display device according to claim 16, characterized in that the shape of the first sensor electrode and the shape of the second sensor electrode are the same.

19. The display device according to claim 16, further comprising an intertouch insulating layer between the first sensor electrode and the second sensor electrode, wherein the intertouch insulating layer comprises an organic material.

20. The system further includes a third sensor electrode positioned at a distance from the first sensor electrode, and a fourth sensor electrode positioned at a distance from the second sensor electrode, The display device according to claim 16, characterized in that the third sensor electrode is arranged in the same layer as the first sensor electrode, and the fourth sensor electrode is arranged in the same layer as the second sensor electrode.

21. The display device according to claim 20, characterized in that the first to fourth sensor electrodes are electrically connected to form a single mesh-like touch electrode.

22. The substrate further includes subpixels located between the black matrix, The aforementioned subpixel is, The first subpixel surrounded by the first sensor electrode, The second subpixel surrounded by the second sensor electrode, The third subpixel surrounded by the third sensor electrode, Including a fourth subpixel surrounded by the fourth sensor electrode, The display device according to claim 20, characterized in that the first to fourth subpixels each correspond to a first light-emitting region to a fourth light-emitting region.

23. The display device according to claim 22, further comprising a fifth subpixel surrounded by the first to fourth sensor electrodes, wherein the fifth subpixel corresponds to a fifth light-emitting region.

24. The display device according to claim 23, characterized in that the size of the fifth light-emitting region is smaller than the size of each of the first to fourth light-emitting regions.

25. The display device according to claim 16, characterized in that the overlap ratio of the black matrix of the first portion is greater than the overlap ratio of the black matrix of the second portion.

26. The system further includes touch routing lines electrically connected to the first sensor electrode and the second sensor electrode, The display device according to claim 16, characterized in that the touch routing line is arranged in the same layer as at least one of the first sensor electrode and the second sensor electrode.

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