Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method capable of improving the cleanliness of the underside of a substrate after cleaning. [Solution] The substrate is held in place by a suction-holding unit at the center of its lower surface and rotates around a vertical axis. A cleaning solution is supplied to the lower surface of the rotating substrate. A brush is moved to contact the outer lower surface area of ​​the rotating substrate, and the outer lower surface area of ​​the substrate is cleaned. At this time, the brush rotates around the vertical axis at a first brush rotation speed bv1. The state of the brush when it contacts the substrate is called the cleaning state. After cleaning the outer lower surface area, the brush moves away from the substrate. The state of the brush when it moves away from the substrate is called the standby state. When the brush begins to transition from the cleaning state to the standby state, the brush rotation speed is changed to a fourth brush rotation speed bv4 which is higher than the first brush rotation speed bv1.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a substrate.

Background Art

[0002] A substrate processing apparatus is used to perform various processes on substrates such as semiconductor substrates, substrates for flat panel displays (FPDs) such as liquid crystal display devices or organic EL (Electro Luminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, or solar cell substrates.

[0003] Patent Document 1 describes, as an example of a substrate processing apparatus, a substrate cleaning apparatus that performs a cleaning process on a substrate. The substrate cleaning apparatus includes an upper holding device, a lower holding device, and a lower surface cleaning device.

[0004] The upper holding device includes a pair of lower chucks and a pair of upper chucks. A substrate disposed between the pair of lower chucks and between the pair of upper chucks is sandwiched by the pair of lower chucks and the pair of upper chucks. Thereby, the substrate to be cleaned is held in a state where the pair of lower chucks and the pair of upper chucks contact the outer peripheral end portion of the substrate. The lower surface cleaning device cleans the central region of the lower surface of the substrate held by the upper holding device.

[0005] The lower holding device is a so-called spin chuck that rotates the substrate in a horizontal posture while adsorbing and holding the central region of the lower surface of the substrate. The lower surface cleaning device further cleans a region surrounding the central region of the lower surface of the substrate held by the lower holding device (hereinafter referred to as the lower surface outer region).

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

[0007] The above-described bottom cleaning device cleans the central and outer areas of the bottom surface of the substrate by bringing the bottom brush into contact with the bottom surface of the substrate. In this way, when cleaning the substrate physically, there is a possibility that the cleanliness of the substrate after cleaning may decrease due to the contact of the cleaning tool with the substrate.

[0008] The object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can improve the cleanliness of the lower surface of a substrate after cleaning. [Means for solving the problem]

[0009] A substrate processing apparatus according to one aspect of the present invention includes: a first substrate holding unit that holds the central region of the lower surface of a substrate by suction and rotates it around a vertical axis; a brush for cleaning the lower surface of the substrate; a brush rotation drive unit that rotates the brush around a vertical axis; a relative movement unit that moves at least one of the brush and the first substrate holding unit to transition the brush between a standby state in which the brush is separated from the substrate and a first cleaning state in which the brush is in contact with at least a portion of the outer region of the lower surface surrounding the central region of the lower surface of the substrate held by the first substrate holding unit; and a cleaning liquid supply unit that supplies cleaning liquid to at least one of the lower surface of the substrate held by the first substrate holding unit and the brush. The system comprises a control unit that controls the first substrate holding unit, the brush rotation drive unit, the relative movement unit, and the cleaning fluid supply unit. The control unit controls the first substrate holding unit and the cleaning fluid supply unit to rotate the substrate and supply the cleaning fluid to at least one of the lower surface of the substrate and the brush when the brush is in a first cleaning state. The control unit controls the brush rotation drive unit to rotate the brush at a first rotational speed to clean the outer region of the lower surface when the brush is in a first cleaning state. The control unit controls the brush rotation drive unit to rotate the brush at a second rotational speed higher than the first rotational speed when the brush begins to transition from the first cleaning state to the standby state.

[0010] A substrate processing method according to another aspect of the present invention includes the steps of: rotating the substrate around a vertical axis while adsorbing and holding the central region of the lower surface of the substrate using a first substrate holding part; cleaning the lower surface of the substrate using a brush; rotating the brush around a vertical axis; and moving at least one of the brush and the first substrate holding part to move the brush from a standby state where the brush is separated from the substrate to a first cleaning state where the brush is in contact with at least a portion of the outer region of the lower surface surrounding the central region of the lower surface of the substrate held by the first substrate holding part. The step of transitioning between states, and the step of supplying cleaning fluid to the lower surface of the substrate and at least one of the brush while rotating the substrate held by the first substrate holder when the brush is in the first cleaning state, wherein the step of rotating the brush includes rotating the brush at a first rotational speed to clean the outer region of the lower surface when the brush is in the first cleaning state, and rotating the brush at a second rotational speed higher than the first rotational speed when the brush begins to transition from the first cleaning state to the standby state. [Effects of the Invention]

[0011] According to the present invention, it becomes possible to improve the cleanliness of the lower surface of the substrate after cleaning. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic plan view of a substrate processing apparatus according to the first embodiment. [Figure 2] Figure 1 is a perspective view showing the internal configuration of the substrate processing apparatus. [Figure 3] Figure 1 is a flowchart showing the substrate cleaning process performed by the control unit. [Figure 4] This is a diagram illustrating multiple regions defined on the underside of the substrate. [Figure 5] This diagram illustrates the detailed operation of each part of the substrate cleaning apparatus during the substrate cleaning process. [Figure 6]This diagram illustrates the detailed operation of each part of the substrate cleaning apparatus during the substrate cleaning process. [Figure 7] This diagram illustrates the detailed operation of each part of the substrate cleaning apparatus during the substrate cleaning process. [Figure 8] This diagram illustrates the detailed operation of each part of the substrate cleaning apparatus during the substrate cleaning process. [Figure 9] Figures 5 to 8 are time charts showing the change in rotation speed of the substrate cleaning brush during the substrate cleaning process. [Figure 10] Figures 5 to 8 are time charts showing the change in rotation speed of the suction and holding unit during the substrate cleaning process. [Figure 11] This is a schematic plan view of a substrate processing apparatus according to a second embodiment. [Modes for carrying out the invention]

[0013] Hereinafter, a substrate processing apparatus and a substrate processing method according to one embodiment of the present invention will be described with reference to the drawings. In the following description, "substrate" refers to a substrate used in liquid crystal display devices or organic EL (Electro Luminescence) display devices, such as a flat panel display (FPD) substrate, semiconductor substrate, optical disk substrate, magnetic disk substrate, magneto-optical disk substrate, photomask substrate, ceramic substrate, or solar cell substrate.

[0014] The substrate described below has a circular shape in plan view, except for the notch formation area. The substrate also has a front surface, which is the circuit formation surface, and a back surface, which is the opposite surface to the circuit formation surface. In the following description, regardless of whether it is the front or back surface of the substrate, the surface of the substrate that faces upward will be called the top surface of the substrate, and the surface of the substrate that faces downward will be called the bottom surface of the substrate. In the following description, the central part of the bottom surface of the substrate W will be called the bottom central region, and the region of the bottom surface of the substrate W that surrounds the bottom central region will be called the bottom outer region. The bottom outer region will include the outer edge of the substrate.

[0015] 1. First Embodiment <1>Configuration of the Substrate Processing Apparatus The substrate processing apparatus according to the first embodiment has a cleaning function of cleaning the lower surface of a substrate using a substrate cleaning brush. The substrate cleaning brush described below cleans the lower surface of a substrate held in a horizontal posture or a substantially horizontal posture. Specifically, the substrate cleaning brush is pressed against the lower surface of the substrate from below and slid on the lower surface of the substrate to clean the lower surface of the substrate.

[0016] In the present invention, "the substrate cleaning brush contacts the substrate" means either that the substrate cleaning brush directly contacts the substrate or that the substrate cleaning brush is close to the substrate with a liquid film of a minute thickness interposed therebetween.

[0017] FIG. 1 is a schematic plan view of the substrate processing apparatus according to the first embodiment. FIG. 2 is a perspective view showing the internal configuration of the substrate processing apparatus 1 in FIG. 1. In the substrate processing apparatus 1 according to the present embodiment, for the sake of clarifying the positional relationship, the X direction, the Y direction, and the Z direction orthogonal to each other are defined. In the predetermined figures after FIGS. 1 and 2, the X direction, the Y direction, and the Z direction are appropriately indicated by arrows. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction (the perpendicular direction).

[0018] As shown in FIGS. 1 and 2, the substrate processing apparatus 1 has a configuration in which an upper holding device 10A, 10B, a lower holding device 20, a pedestal device 30, a transfer device 40, a lower surface cleaning device 50, a cup device 60, an upper surface cleaning device 70, an end cleaning device 80, and an opening / closing device 90 are housed in a unit housing 2. In FIG. 2, the unit housing 2 is indicated by a dotted line.

[0019] The unit housing 2 has a rectangular parallelepiped shape and includes a rectangular base and four side walls extending upward from the four sides of the base. Two of the four side walls face each other in the Y direction. The other two side walls face each other in the X direction. An loading / unloading port 2x for the substrate W is formed in the center of one of the four side walls. An opening / closing device 90 is provided near the loading / unloading port 2x. The opening / closing device 90 includes a shutter 91 and is configured to open and close the loading / unloading port 2x using the shutter 91.

[0020] A base device 30 is provided on the bottom surface of the unit housing 2. The base device 30 includes a linear guide 31 and a movable base 32. The linear guide 31 includes two rails aligned in the X direction and extends in the Y direction so as to cross the central portion of the bottom surface in the X direction. The base device 30 is configured to allow the movable base 32 to be moved to multiple positions in the Y direction on the two rails of the linear guide 31.

[0021] The lower holding device 20 and the lower surface cleaning device 50 are arranged on the movable base 32 so as to be aligned in the Y direction. The lower holding device 20 is fixed to the upper surface of the movable base 32 and includes a suction holding part 21 and two back rinse nozzles 29. The suction holding part 21 is a so-called spin chuck and has a circular suction surface capable of suction holding the lower surface of the substrate W. The suction holding part 21 is also configured to be rotatable around an axis extending in the vertical direction (the axis in the Z direction). The lower holding device 20 suction holds the central region of the lower surface of the substrate W with the suction holding part 21 and rotates the suction-held substrate W around the axis extending in the vertical direction.

[0022] Each of the two back rinse nozzles 29 is mounted on a movable base 32 near the suction holding unit 21, with its liquid discharge port facing upward, more specifically diagonally upward. A cleaning fluid supply system (not shown) is connected to the back rinse nozzles 29. When cleaning the underside of the substrate W, the back rinse nozzles 29 discharge cleaning fluid supplied from the cleaning fluid supply system onto the underside of the substrate W as needed. In this embodiment, pure water is used as the cleaning fluid supplied to the back rinse nozzles 29.

[0023] A transfer device 40 is provided on the movable base 32 near the lower holding device 20. The transfer device 40 has a plurality of support pins 41 (three in this example) that surround the suction holding part 21 in a plan view and extend in the vertical direction. The plurality of support pins 41 are provided so as to be able to move up and down between a plurality of predetermined height positions.

[0024] As described later, the upper holding devices 10A and 10B are configured to hold the substrate W at a position above the lower holding device 20. The transfer device 40 can receive the substrate W held by the lower holding device 20 and transfer it to the upper holding devices 10A and 10B by raising and lowering a plurality of support pins 41. The transfer device 40 can also receive the substrate W held by the upper holding devices 10A and 10B and transfer it to the lower holding device 20.

[0025] The lower surface cleaning device 50 includes a substrate cleaning brush 100, two brush nozzles 52a and 52b, a gas ejection unit 53, a lifting and rotating support unit 54, and various drive units (not shown). The lifting and rotating support unit 54 is fixed to the upper surface of the movable base 32 so as to be adjacent to the lower holding device 20 in the Y direction.

[0026] As shown in Figure 1, the substrate cleaning brush 100 has a circular cleaning surface that can contact the lower surface of the substrate W. The substrate cleaning brush 100 is attached to the lifting and rotating support unit 54 such that the cleaning surface faces upward and the cleaning surface can rotate around an axis that passes through the center of the cleaning surface and extends vertically. The area of ​​the cleaning surface of the substrate cleaning brush 100 is larger than the area of ​​the suction surface of the suction holding unit 21.

[0027] The substrate cleaning brush 100 is formed from, for example, a PVA (polyvinyl alcohol) sponge or a PVA sponge with abrasive particles dispersed in it. Furthermore, the substrate cleaning brush 100 may have a cleaning surface other than a circular shape. For example, the cleaning surface of the substrate cleaning brush 100 may have an annular shape, or a strip shape extending in one direction. Alternatively, the cleaning surface of the substrate cleaning brush 100 may have a shape that combines an annular cleaning surface and a strip-shaped cleaning surface.

[0028] The lifting and rotating support unit 54 includes a lifting mechanism for raising and lowering the substrate cleaning brush 100 and a brush drive mechanism for rotating the substrate cleaning brush 100. The lifting and rotating support unit 54 moves up and down while the substrate W is held by the lower holding device 20 or the upper holding devices 10A, 10B, using its lifting and lowering mechanism. As a result, the lifting and rotating support unit 54 moves the substrate cleaning brush 100 between three different height positions: a first height position, a second height position, and a third height position.

[0029] The first height position is lower than the second and third height positions, and is, for example, the lowest height position within the range in the Z direction from which the substrate cleaning brush 100 can be raised and lowered by the lifting mechanism. The substrate cleaning brush 100 is mainly held at the first height position when it is in standby mode and not cleaning the substrate W.

[0030] The second height position is the height position of the substrate cleaning brush 100 when it contacts the lower surface of the substrate W held by the upper holding devices 10A and 10B. The third height position is the height position of the substrate cleaning brush 100 when it contacts the lower surface of the substrate W held by the lower holding device 20.

[0031] Furthermore, the lifting and lowering rotation support unit 54 rotates (rotates on its own axis) the substrate cleaning brush 100 around an axis extending in the vertical direction by its brush drive mechanism. As the substrate cleaning brush 100 rotates while at the second or third height position, the contact portion of the substrate cleaning brush 100 with the lower surface of the substrate W is cleaned.

[0032] The two brush nozzles 52a and 52b are used to clean the substrate cleaning brush 100 and to wet the substrate cleaning brush 100 with cleaning fluid. One brush nozzle 52a is positioned on the upper surface of the lifting and rotating support unit 54 such that its tip (liquid discharge port) faces the space above the substrate cleaning brush 100. The other brush nozzle 52b is positioned on the upper surface of the lifting and rotating support unit 54 such that its tip (liquid discharge port) faces the side (outer circumferential surface) of the substrate cleaning brush 100. A cleaning fluid supply system (not shown) is connected to the brush nozzles 52a and 52b.

[0033] The brush nozzle 52a discharges cleaning fluid supplied from the cleaning fluid supply system when the substrate cleaning brush 100 is in standby position at a first height. In this case, the cleaning fluid discharged from the brush nozzle 52a is guided from a position to the side of the substrate cleaning brush 100 in a parabolic trajectory to the center of the upper surface of the substrate cleaning brush 100.

[0034] Furthermore, the brush nozzle 52b discharges cleaning fluid supplied from the cleaning fluid supply system when the substrate cleaning brush 100 is in standby position at the first height. In this case, the cleaning fluid discharged from the brush nozzle 52b is guided from a position to the side of the substrate cleaning brush 100 to the side (outer surface) of the substrate cleaning brush 100. In this embodiment, pure water is used as the cleaning fluid supplied to the brush nozzles 52a and 52b.

[0035] Even when in standby mode, the substrate cleaning brush 100 is rotated at a predetermined rotational speed by the lifting and lowering rotation support unit 54. As a result, when cleaning fluid is supplied to the substrate cleaning brush 100 from the brush nozzles 52a and 52b, the cleaning fluid flows over the entire surface of the substrate cleaning brush 100. Therefore, contaminants adhering to the substrate cleaning brush 100 are smoothly removed at the first height position. In addition, the drying of the substrate cleaning brush 100 is suppressed as the cleaning fluid soaks into the substrate cleaning brush 100.

[0036] The gas ejection unit 53 is a slit-shaped gas injection nozzle having a gas outlet extending in one direction. The gas ejection unit 53 is mounted on the lifting and rotating support unit 54 so that, in a plan view, it is located between the substrate cleaning brush 100 and the adsorption holding unit 21 and the gas injection port faces upward. A gas injection supply system (not shown) is connected to the gas ejection unit 53. In this embodiment, nitrogen gas is used as the gas supplied to the gas ejection unit 53. The gas ejection unit 53 injects the gas supplied from the gas injection supply system onto the underside of the substrate W when the substrate W is being cleaned by the substrate cleaning brush 100 and when the central region of the underside of the substrate W is being dried (described later). As a result, a band-shaped gas curtain extending in the X direction is formed between the substrate cleaning brush 100 and the adsorption holding unit 21.

[0037] The cup device 60 is located approximately in the center of the unit housing 2 and includes a cup 61. The cup 61 is positioned to surround the lower holding device 20 and the base device 30 in a plan view and is vertically movable. In Figure 2, the cup 61 is shown by a dotted line. The cup 61 moves between predetermined lower and upper cup positions depending on which part of the lower surface of the substrate W the substrate cleaning brush 100 is cleaning. The lower cup position is a height position where the upper end of the cup 61 is below the substrate W that is held by the suction holding part 21. The upper cup position is a height position where the upper end of the cup 61 is above the suction holding part 21.

[0038] The upper holding devices 10A and 10B are positioned at a height above the cup 61. In a plan view, the upper holding devices 10A and 10B face each other with the base device 30 in between. The upper holding device 10A includes a lower chuck 11A and an upper chuck 12A. The upper holding device 10B includes a lower chuck 11B and an upper chuck 12B.

[0039] The lower chucks 11A and 11B are arranged symmetrically with respect to a vertical plane extending in the Y direction through the center of the suction holding portion 21 in a plan view, and are provided to be movable in the X direction within a common horizontal plane. Each of the lower chucks 11A and 11B has two support pieces capable of supporting the lower outer region of the substrate W from below the substrate W. The upper chucks 12A and 12B are arranged symmetrically with respect to a vertical plane extending in the Y direction through the center of the suction holding portion 21 in a plan view, and are provided to be movable in the X direction within a common horizontal plane, similar to the lower chucks 11A and 11B. Each of the upper chucks 12A and 12B has two holding pieces configured to contact two portions of the outer peripheral edge of the substrate W and to hold the outer peripheral edge of the substrate W.

[0040] In the upper holding devices 10A and 10B, the distance between the lower chuck 11A and upper chuck 12A and the lower chuck 11B and upper chuck 12B is adjusted. As a result, the upper holding devices 10A and 10B can hold the substrate W above the lower holding device 20 by sandwiching the substrate W between the lower chuck 11A and upper chuck 12A and the lower chuck 11B and upper chuck 12B. In addition, the upper holding devices 10A and 10B can release the held substrate W by moving the lower chuck 11A and upper chuck 12A and the lower chuck 11B and upper chuck 12B further apart from each other.

[0041] As shown in Figure 1, an upper surface cleaning device 70 is provided on one side of the cup 61 in the X direction. As shown in Figure 2, the upper surface cleaning device 70 includes a rotating support shaft 71, an arm 72, and a spray nozzle 73. The rotating support shaft 71 is provided to extend vertically, be vertically movable, and rotatable. The arm 72 is provided to extend horizontally from the upper end of the rotating support shaft 71 at a position above the upper holding devices 10A and 10B. A spray nozzle 73 is attached to the tip of the arm 72. A fluid supply system (not shown) is connected to the spray nozzle 73. Cleaning liquid and gas are supplied to the spray nozzle 73 from the fluid supply system (not shown). As a result, the cleaning liquid and gas are mixed in the spray nozzle 73 to produce a mixed fluid. The produced mixed fluid is sprayed downward from the spray nozzle 73.

[0042] In the top surface cleaning device 70, for example, with the substrate W held and rotated by the lower holding device 20, the height position of the rotation support shaft 71 is adjusted so that the spray nozzle 73 moves above the substrate W, and the rotation support shaft 71 rotates. In this state, the mixed fluid is sprayed from the spray nozzle 73 onto the substrate W. As a result, the entire top surface of the substrate W is cleaned.

[0043] As shown in Figure 1, an end cleaning device 80 is provided on the other side of the cup 61 in the X direction. As shown in Figure 2, the end cleaning device 80 includes a rotating support shaft 81, an arm 82, and a bevel brush 83. The rotating support shaft 81 is provided to extend vertically, be vertically movable, and rotatable. The arm 82 is provided to extend horizontally from the upper end of the rotating support shaft 81 at a position above the upper holding devices 10A and 10B. A bevel brush 83 is provided at the tip of the arm 82 so as to protrude downward and be rotatable around a vertical axis.

[0044] In the edge cleaning device 80, for example, with the substrate W held and rotated by the lower holding device 20, the height position of the rotation support shaft 81 is adjusted so that the bevel brush 83 contacts the outer edge of the substrate W, and the rotation support shaft 81 rotates. Furthermore, the bevel brush 83 provided at the tip of the arm 82 rotates around the vertical axis. As a result, the entire outer edge of the substrate W is cleaned.

[0045] As shown in Figure 1, the substrate processing apparatus 1 further includes a control unit 9. The control unit 9 includes, for example, a CPU (Central Processing Unit) and memory or a microcomputer. The memory stores a substrate cleaning program. The CPU of the control unit 9 controls the operation of each of the above components (10A, 10B, 20, 30, 40, 50, 60, 70, 80, 90) by executing the substrate cleaning program stored in memory. The CPU of the control unit 9 also controls the fluid supply system connected to the various nozzles (29, 52a, 52b, 53, 70).

[0046] <2> Basic flow of circuit board cleaning process In the substrate processing apparatus 1, the substrate cleaning process is performed by its cleaning function. The substrate cleaning process will be described below. Figure 3 is a flowchart showing the substrate cleaning process performed by the control unit 9 in Figure 1.

[0047] The substrate cleaning process according to this embodiment is performed by the CPU of the control unit 9 executing a substrate cleaning program stored in memory. In the initial state, the base device 30 is assumed to have the movable base 32 positioned such that the suction holding part 21 of the lower holding device 20 is located in the center of the cup 61 in a plan view.

[0048] First, the control unit 9 controls the opening / closing device 90 to open the loading / unloading port 2x and receive the substrate W loaded from outside the substrate processing device 1 into the unit housing 2 (step S1).

[0049] Next, the control unit 9 controls the transfer device 40 to receive the substrate W with the multiple support pins 41 and transfer the received substrate W to the upper holding devices 10A and 10B (step S2). At this time, the control unit 9 controls the upper holding devices 10A and 10B to hold the outer edge of the substrate W above the lower holding device 20 (step S3). If the substrate W brought in from outside the substrate processing device 1 can be placed on the lower chucks 11A and 11B, the process in step S2 may be omitted. The input / output port 2x, which was opened in step S1, is closed by the shutter 91 after the substrate W has been received by the transfer device 40.

[0050] Subsequently, the control unit 9 controls the base device 30 and the bottom surface cleaning device 50 to clean the central area of ​​the bottom surface of the substrate W (step S4). At this time, the substrate cleaning brush 100 is raised from the first height position to the second height position. Details of the operation of each part of the substrate processing apparatus 1 during the cleaning of the central area of ​​the bottom surface of the substrate W (during the process in step S4) will be described later.

[0051] During cleaning in step S4, the central region of the underside of the substrate W is cleaned by the substrate cleaning brush 100 soaked in cleaning solution. As a result, the cleaning solution adheres to the central region of the underside of the substrate W. The control unit 9 then dries the central region of the underside of the substrate W by further controlling the base device 30 and the underside cleaning device 50 (step S5). Specifically, the control unit 9 controls the base device 30 while gas is being sprayed from the gas ejection unit 53 toward the underside of the substrate W (a state in which a gas curtain is generated), so that the gas ejection unit 53 moves relative to the underside of the substrate W so that it passes through the central region of the underside in a plan view. As a result, the cleaning solution adhering to the central region of the underside is pushed away by the gas curtain to a position away from the central region of the underside, and the central region of the underside dries. After the completion of step S5, the substrate cleaning brush 100 is returned from the second height position to the first height position.

[0052] Next, the control unit 9 controls the transfer device 40 to receive the substrate W held by the upper holding devices 10A and 10B using the multiple support pins 41, and transfers the received substrate W to the lower holding device 20 (step S6).

[0053] Next, the control unit 9 controls the lower holding device 20 to hold the central region of the lower surface of the substrate W with the suction holding unit 21 (step S7). During steps S6 and S7, the base device 30 is positioned so that the center of the substrate W is located at the center of the suction holding unit 21 in a plan view. As a result, the substrate W is held by the suction holding unit 21 with its center located on the rotation center (rotation axis) of the suction holding unit 21.

[0054] Furthermore, the control unit 9 controls the lower holding device 20, the base device 30, the bottom surface cleaning device 50, the top surface cleaning device 70, and the edge cleaning device 80 to clean the entire top surface, the outer peripheral edge, and the outer region of the bottom surface of the substrate W (step S8).

[0055] At the start of step S8, the substrate cleaning brush 100 is raised from a first height position to a third height position and contacts the outer lower surface area of ​​the substrate W. The spray nozzle 73 is moved to a position facing the upper surface of the substrate W. Furthermore, the bevel brush 83 is moved to a position that contacts the outer edge of the substrate W.

[0056] At the end of step S8, the circuit board cleaning brush 100 is returned from the third height position to the first height position. The spray nozzle 73 and bevel brush 83 are also returned to their initial positions.

[0057] In this embodiment, the substrate processing apparatus 1 is adjusted so that the rotational speed of the substrate cleaning brush 100 when it separates from the lower outer region of the substrate W is higher than the rotational speed when it is cleaning the lower outer region of the substrate W. The operation of the substrate processing apparatus 1 during a certain period including the time when the substrate cleaning brush 100 separates from the lower outer region is called the brush separation preparation operation. Details of the operation of each part of the substrate processing apparatus 1 during cleaning the lower outer region of the substrate W (during the process in step S8) will be described later.

[0058] Subsequently, the control unit 9 controls the lower holding device 20 to rotate the substrate W at high speed and dry the entire substrate W (step S9). This drying method, in which the entire substrate W is dried by rotating it at high speed, is called spin drying.

[0059] Finally, the control unit 9 opens the input / output port 2x by controlling the opening / closing device 90. As a result, the substrate W is transported to the outside of the substrate processing device 1 (step S10), and the substrate cleaning process is completed. After the substrate W is discharged, the input / output port 2x that was opened in step S10 is closed by the shutter 91.

[0060] Furthermore, during steps S8 and S9 of the above-described series of processes, the control unit 9 controls the cup device 60 to hold the cup 61 in the upper cup position. As a result, droplets scattered from the substrate W during cleaning of the entire upper surface, outer peripheral edges, and outer lower surface region of the substrate W, and during spin drying of the substrate W, are caught by the cup 61 and discharged to the outside of the substrate processing apparatus 1. In addition, during the processes other than steps S8 and S9 of the above-described series of processes (steps S1 to S7, S10), the control unit 9 controls the cup device 60 to hold the cup 61 in the lower cup position.

[0061] <3> Multiple regions defined on the lower surface of the substrate W To explain in detail the operation of each part of the substrate processing apparatus 1 during cleaning of the central and outer lower surface regions of the substrate W, we will first describe the multiple regions defined on the lower surface of the substrate W. These multiple regions include, in addition to the central and outer lower surface regions described above, a contact region, a separated region, and a gap region.

[0062] Figure 4 is a diagram illustrating multiple regions defined on the underside of the substrate W. The upper left of Figure 4 shows a view of the underside of the substrate W illustrating the central region of the underside. In this view, the central region R1 is indicated by hatching. As described above, the central region R1 is the central part of the underside of the substrate W and is the region that is adsorbed by the adsorption holding part 21. Therefore, the central region R1 has the same circular shape as the adsorption surface of the adsorption holding part 21. The center of the central region R1 coincides with, or approximately coincides with, the center WC of the substrate W.

[0063] In the upper left bottom view of Figure 4, the outer circumference of the substrate cleaning brush 100 is shown by a dashed line, along with the central region R1 of the bottom surface, when the center of the substrate cleaning brush 100 is aligned with the center WC of the substrate W. Note that the diameter of the suction holding part 21 is smaller than the diameter of the substrate cleaning brush 100.

[0064] The lower left of Figure 4 shows a bottom view of the substrate W to illustrate the lower outer region. In this bottom view, the lower outer region R2 is indicated by hatching. As described above, the lower outer region R2 has an annular shape that includes the outer edge of the substrate W and surrounds the lower central region R1.

[0065] In the lower left bottom view of Figure 4, the outlines of the bottom central region R1 are shown by dotted lines, along with the bottom outer region R2. Furthermore, the outer circumference of the substrate cleaning brush 100 when its center is aligned with the center WC of the substrate W is shown by a dashed line. In this example, the inner diameter of the bottom outer region R2 is smaller than the outer diameter of the cleaning surface of the substrate cleaning brush 100. However, this is not limited to this example; the inner diameter of the bottom outer region R2 and the outer diameter of the cleaning surface of the substrate cleaning brush 100 may coincide.

[0066] The upper right of Figure 4 shows a bottom view of the substrate W to illustrate the contact region R3 and the separation region R4. The contact region R3 refers to the position on the bottom surface of the substrate W when the substrate cleaning brush 100, which is separated from the substrate W, is brought into contact with the bottom surface of the substrate W when cleaning the central region R1 on the bottom surface of the substrate W. The separation region R4 in this embodiment refers to the position on the bottom surface of the substrate W when the substrate cleaning brush 100, which is in contact with the substrate W, is separated from the bottom surface of the substrate W when cleaning the central region R1 on the bottom surface of the substrate W.

[0067] In the upper right bottom view of Figure 4, the contact region R3 and the separation region R4 are indicated by hatching. In this embodiment, the contact region R3 and the separation region R4 are defined in a common position on the bottom surface of the substrate W. Furthermore, the contact region R3 and the separation region R4 are located on the bottom surface of the substrate W, between the outer edge of the substrate W and the central bottom region R1 mentioned above. In addition, in the upper right bottom view of Figure 4, the outer circle of the central bottom region R1 is shown by a dotted line, and the inner circle of the outer bottom region R2 is shown by a dashed line.

[0068] The lower right of Figure 4 shows a bottom view of the substrate W to illustrate the gap region R5. The gap region R5 is the area on the bottom surface of the substrate W located between a part of the outer edge of the substrate W and the contact region R3 and the separation region R4. In the bottom view of the lower right of Figure 4, the gap region R5 is shown with a dot pattern. Also in the bottom view of the lower right of Figure 4, the outer circles of the contact region R3 and the separation region R4 are shown with dotted lines.

[0069] <4> Details of the operation of each part of the substrate processing apparatus 1 during substrate cleaning. Figures 5 to 8 are diagrams illustrating the detailed operation of each part of the substrate cleaning apparatus 1 during the substrate cleaning process. Here, we focus on the processing performed during the period from the start of step S4 to the end of step S9 in Figure 3. Each of Figures 5 to 8 shows the operating state of parts of the substrate cleaning apparatus 1 (mainly the lower holding device 20, the base device 30, and the bottom surface cleaning device 50) at multiple points in time during the substrate cleaning process, arranged from left to right in chronological order. In addition, Figures 5 to 8 show the operating state of the substrate cleaning apparatus 1 at each point in time in schematic plan views and schematic side views. The schematic side views shown in Figures 5 to 8 correspond to the schematic side views on the QQ line in Figure 1. Furthermore, in the lower part of Figures 5 to 8, the cleaning state of the bottom surface of the substrate W at each point in time is shown in a bottom view of the substrate W.

[0070] Figure 9 is a time chart showing the change in rotational speed of the substrate cleaning brush 100 during the substrate cleaning process shown in Figures 5 to 8. The time chart in Figure 9 is shown as a graph. In the graph in Figure 9, the vertical axis represents the rotational speed of the substrate cleaning brush 100, and the horizontal axis represents time. Figure 10 is a time chart showing the change in rotational speed of the suction holding unit 21 during the substrate cleaning process shown in Figures 5 to 8. The time chart in Figure 10 is shown as a graph. In the graph in Figure 10, the vertical axis represents the rotational speed of the suction holding unit 21, and the horizontal axis represents time.

[0071] During the substrate cleaning process in the substrate processing apparatus 1, the movable base 32 of the base apparatus 30 moves in the Y direction on the linear guide 31 between a predetermined first horizontal position P1, a second horizontal position P2, and a third horizontal position P3. In the schematic side views of Figures 5 to 8, the point labeled "P1" indicates the position of the center of the movable base 32 when it is at the first horizontal position P1. The point labeled "P2" indicates the position of the center of the movable base 32 when it is at the second horizontal position P2. Furthermore, the point labeled "P3" indicates the position of the center of the movable base 32 when it is at the third horizontal position P3.

[0072] Furthermore, during the substrate cleaning process in the substrate processing apparatus 1, the substrate cleaning brush 100 moves between predetermined first, second, and third height positions on the movable base 32, as described above.

[0073] The operation of the lower holding device 20, the base device 30, and the bottom cleaning device 50 during the substrate cleaning process will be explained in detail below using Figures 5 to 10. As shown in the left part of Figure 5, at time t1, the substrate W that has been brought into the substrate processing device 1 is held in a horizontal position by the upper holding devices 10A and 10B and fixed inside the substrate processing device 1. The movable base 32 of the base device 30 is assumed to be in the first horizontal position P1. In this case, the rotation center (rotation axis) of the suction holding part 21 is located on the vertical axis passing through the center WC of the substrate W. Also, in a plan view, most (part) of the cleaning surface of the substrate cleaning brush 100 overlaps with the substrate W, and a small portion (the remaining part) of the cleaning surface of the substrate cleaning brush 100 is located outside the outer edge of the substrate W. In the radial direction of the substrate W, the maximum amount of the protrusion of the cleaning surface of the substrate cleaning brush 100 relative to the bottom surface of the substrate W is, for example, about 7 mm (see the symbol d1 in the upper left part of Figure 5).

[0074] Furthermore, at time t1, the substrate cleaning brush 100 is held at a first height position below the substrate W. As a result, the substrate cleaning brush 100 is separated from the substrate W by a predetermined distance. The substrate cleaning brush 100 also rotates at a predetermined first brush rotation speed bv1 (see Figure 9), and cleaning fluid is supplied to the substrate cleaning brush 100 from brush nozzles 52a and 52b. The first brush rotation speed bv1 is set to such an extent that the cleaning fluid supplied to the substrate cleaning brush 100 does not splash around the substrate cleaning brush 100 (for example, between 60 rpm and 130 rpm), and in this example, it is 60 rpm.

[0075] In this example, the rotational speed of the suction holding unit 21 is assumed to be maintained at 0 rpm from before the substrate W is loaded into the substrate processing apparatus 1 until time t1. At time t1, the rotational speed of the suction holding unit 21, which was maintained at 0 rpm, increases toward the first chuck rotational speed cv1. Thereafter, the rotational speed of the suction holding unit 21 is maintained at the first chuck rotational speed cv1 until time t8, which will be described later (see Figure 10). The first chuck rotational speed cv1 is set to a rotational speed (for example, 2400 rpm) that allows the cleaning liquid to be shaken off the suction holding unit 21 even if cleaning liquid adheres to it.

[0076] Next, in order to clean the central region R1 on the underside of the substrate W, the movable base 32 moves from the first horizontal position P1 to the second horizontal position P2 from time t1 to time t2. As shown in the central part of Figure 5, when the movable base 32 is at the second horizontal position P2 at time t2, the rotation center (rotation axis) of the suction holding part 21 is offset from the vertical axis passing through the center WC of the substrate W. Also, in a plan view, the entire cleaning surface of the substrate cleaning brush 100 overlaps the substrate W. At this time, a gap is formed between the outer edge of the substrate cleaning brush 100 and the outer edge of the substrate W in the radial direction of the substrate W. The minimum size of the gap between the outer edge of the substrate cleaning brush 100 and the outer edge of the substrate W is, for example, about 3 mm (see the symbol d2 in the upper central part of Figure 5). When the movable base 32 is at the second horizontal position P2, the region on the underside of the substrate W that faces the cleaning surface of the substrate cleaning brush 100 in the vertical direction becomes the contact region R3 in Figure 4.

[0077] Next, at time t2, the supply of cleaning fluid from the brush nozzles 52a and 52b to the substrate cleaning brush 100 is stopped. Also from time t2, the substrate cleaning brush 100 rises toward the lower surface of the substrate W. As a result, as shown in the right portion of Figure 5, at time t3, the substrate cleaning brush 100 reaches a second height position and comes into contact with the contact area R3 on the lower surface of the substrate W. Here, as shown in Figure 9, the rotational speed of the substrate cleaning brush 100 increases from the first brush rotational speed bv1 to a predetermined second brush rotational speed bv2 as the substrate cleaning brush 100 rises from time t2 to time t3. The second brush rotational speed bv2 is set within a predetermined speed range (for example, 100 rpm to 200 rpm) that is higher than the first brush rotational speed bv1, and in this example it is 150 rpm.

[0078] As described above, the substrate cleaning brush 100, soaked in cleaning solution, comes into contact with the underside of the substrate W, and the contact area R3 is cleaned as the substrate cleaning brush 100 rotates. In the lower right section of Figure 5, the underside view of the substrate W shows the areas cleaned by the substrate cleaning brush 100 with hatching. At this time, the substrate cleaning brush 100 does not come into contact with the gap area R5 between the outer edge of the substrate W and the contact area R3 in a plan view. As a result, contaminants removed by the substrate cleaning brush 100 are prevented from spreading from the contact area R3 beyond the gap area R5 to the upper surface of the substrate W. Therefore, a decrease in the cleanliness of the outer edge of the substrate W and the upper surface of the substrate W is suppressed.

[0079] Next, with the substrate cleaning brush 100 in contact with the underside of the substrate W, the movable base 32 moves in the Y direction from the second horizontal position P2 to the third horizontal position P3 from time t3 to time t4. At this time, the rotation speed of the substrate cleaning brush 100 is maintained at the second brush rotation speed bv2. As a result, as shown by the hatching in the underside view of the substrate W in the lower left part of Figure 6, a portion of the underside of the substrate W, including the central area R1 of the underside, is cleaned by the substrate cleaning brush 100.

[0080] Furthermore, with the substrate cleaning brush 100 in contact with the underside of the substrate W, the movable base 32 moves in the Y direction from the third horizontal position P3 towards the second horizontal position P2 between time points t4 and t5. As a result, the substrate cleaning brush 100 reaches the separated region R4 on the underside of the substrate W, as shown in the central part of Figure 6.

[0081] Here, between time points t3 and t5, gas is ejected from the gas ejection section 53 toward the lower surface of the substrate W, forming a gas curtain. As a result, even if the cleaning liquid contained in the substrate cleaning brush 100 adheres to the lower surface of the substrate W, the residue of that cleaning liquid in the central region R1 of the lower surface is suppressed. This process corresponds to the process in step S5 of Figure 3.

[0082] At time t5, the substrate cleaning brush 100 does not come into contact with the gap region R5 between the outer edge of the substrate W and the separation region R4 in a plan view. As a result, contaminants removed by the substrate cleaning brush 100 are prevented from spreading from the separation region R4 beyond the gap region R5 to the upper surface of the substrate W. Therefore, a decrease in the cleanliness of the outer edge of the substrate W and the upper surface of the substrate W is suppressed.

[0083] Next, from time t5 to time t6, while the substrate cleaning brush 100 is in contact with the substrate W, the rotational speed of the substrate cleaning brush 100 decreases from the second brush rotational speed bv2 to a predetermined third brush rotational speed bv3 (see Figure 9). The third brush rotational speed bv3 is set within a predetermined speed range that is higher than the first brush rotational speed bv1 and lower than the second brush rotational speed bv2 (for example, a speed range higher than 60 rpm and lower than 150 rpm), and in this example it is 70 rpm.

[0084] When the third brush rotation speed bv3 is higher than the first brush rotation speed bv1, the amount of contaminants adhering to the substrate cleaning brush 100 that adhere to the substrate W is reduced when the substrate cleaning brush 100 moves away from the substrate W. Also, when the third brush rotation speed bv3 is lower than the second brush rotation speed bv2, the amount of cleaning fluid that splashes from the substrate cleaning brush 100 when the substrate cleaning brush 100 moves away from the substrate W is reduced.

[0085] Next, from time t6 to time t7, the substrate cleaning brush 100 descends so as to move away from the substrate W. As a result, the substrate cleaning brush 100 moves away from the separation region R4 of the substrate W, and at time t7, the substrate cleaning brush 100 reaches the first height position, as shown in the right portion of Figure 6. Also at time t7, the supply of cleaning fluid from the brush nozzles 52a and 52b to the substrate cleaning brush 100 is resumed. As a result, contaminants adhering to the substrate cleaning brush 100 are washed away by the supplied cleaning fluid.

[0086] Next, from time t7 to time t8, the movable base 32 moves from the second horizontal position P2 towards the first horizontal position P1. As a result, as shown in the left portion of Figure 7, the relative position of the substrate cleaning brush 100 with respect to the substrate W returns to the state at time t1. Subsequently, as shown in Figure 9, between time t8 and time t9, the rotational speed of the substrate cleaning brush 100 decreases from the third brush rotational speed bv3 to the first brush rotational speed bv1. Also, as shown in Figure 10, between time t8 and time t9, the rotational speed of the suction holding unit 21 decreases from the first chuck rotational speed cv1 to 0 rpm. That is, the rotation of the suction holding unit 21 stops.

[0087] Next, between time points t9 and t10, the substrate W is transferred from the upper holding devices 10A and 10B to the lower holding device 20 by the transfer device 40 shown in Figure 1. As a result, as shown in the central part of Figure 7, at time point t10, with the movable base 32 of the base device 30 in the first horizontal position P1, the central region R1 of the lower surface of the substrate W is held by the suction holding part 21 of the lower holding device 20.

[0088] Furthermore, at time t10, the supply of cleaning fluid from the brush nozzles 52a and 52b to the substrate cleaning brush 100 is stopped, and the rotation of the suction holding unit 21 begins, as shown in Figure 10. As a result, the rotation speed of the suction holding unit 21 increases from the stopped state (rotation speed 0 rpm) to the second chuck rotation speed cv2. Consequently, the substrate W held by the lower holding device 20 rotates. The second chuck rotation speed cv2 is lower than the first chuck rotation speed cv1. The second chuck rotation speed cv2 is set within a speed range suitable for cleaning the upper surface and outer peripheral edges of the substrate W by the upper surface cleaning device 70 and edge cleaning device 80 in Figure 1 (for example, 200 rpm to 500 rpm), which in this example is 500 rpm. In addition, cleaning fluid is supplied from two back rinse nozzles 29 (Figure 1) toward the lower surface of the substrate W that is rotating by the lower holding device 20. The flow rate of the cleaning solution supplied to the substrate W from each back rinse nozzle 29 is set to, for example, about 450 ml / min.

[0089] From time t10 to time t11, the substrate cleaning brush 100 rises toward the lower surface of the substrate W. As a result, as shown in the right portion of Figure 7, at time t11 the substrate cleaning brush 100 reaches a third height position and comes into contact with the outer region R2 of the lower surface of the rotating substrate W.

[0090] From time t11 until time t12, after a certain period has elapsed, the rotation speed of the substrate W is maintained at the second chuck rotation speed cv2, while the substrate cleaning brush 100 remains in contact with the lower outer region R2 of the substrate W. At this time, the rotation speed of the substrate cleaning brush 100 is maintained at the first brush rotation speed bv1. As a result, the lower outer region R2 of the substrate W is cleaned. In the lower right section of Figure 7, the area cleaned by the substrate cleaning brush 100 is indicated by hatching in the lower view of the substrate W.

[0091] During the period from time t11 to time t12, the upper surface of the rotating substrate W is further cleaned by the upper surface cleaning device 70. In addition, the outer edges of the rotating substrate W are further cleaned by the edge cleaning device 80. The side view in the middle right section of Figure 7 schematically shows the state of cleaning the upper surface and outer edges of the substrate W by the upper surface cleaning device 70 and the edge cleaning device 80. As a result, when cleaning the lower outer region R2 of the substrate W, even if contaminants move from the outer edges of the substrate W to the upper surface of the substrate W, those contaminants are quickly removed.

[0092] At time t12, the cleaning operation of the top surface and outer edge of the substrate W by the top surface cleaning device 70 and the edge cleaning device 80 is stopped, and the cleaning of the top surface, bottom surface and outer edge of the substrate W is completed. As a result, the top surface cleaning device 70 and the edge cleaning device 80 are returned to their initial state while the supply of cleaning fluid by the back rinse nozzle 29 continues.

[0093] Next, the rotation speed of the substrate cleaning brush 100 increases from the rotation speed during cleaning the lower outer region R2 (in this example, the first brush rotation speed bv1) to a predetermined fourth brush rotation speed bv4 between time t12 and time t13. The fourth brush rotation speed bv4 is set to a rotation speed higher than the rotation speed of the substrate cleaning brush 100 during cleaning the lower outer region R2 (in this example, the first brush rotation speed bv1). Therefore, the fourth brush rotation speed bv4 in this example may be the same as the second brush rotation speed bv2 or the third brush rotation speed bv3. Alternatively, the fourth brush rotation speed bv4 may be a different rotation speed from the second brush rotation speed bv2 and the third brush rotation speed bv3. In this example, the fourth brush rotation speed bv4 is set within a predetermined speed range (for example, 100 rpm to 250 rpm) that is higher than the rotation speed during cleaning the lower outer region R2. In this example, the rotational speed of the fourth brush, bv4, is 150 rpm.

[0094] When the rotational speed of the substrate cleaning brush 100 reaches the fourth brush rotational speed bv4 at time t13, the substrate cleaning brush 100 descends so as to move away from the substrate W, as shown in the left portion of Figure 8. In this way, in the substrate cleaning process according to this embodiment, when the substrate cleaning brush 100 moves away from the lower outer region R2 of the substrate processing apparatus 1, the rotational speed of the substrate W is maintained at the second chuck rotational speed cv2 while cleaning fluid is supplied to the lower surface of the substrate W. Furthermore, the rotational speed of the substrate cleaning brush 100 is adjusted to a fourth brush rotational speed bv4, which is higher than the first brush rotational speed bv1 used when cleaning the lower outer region R2 of the substrate W.

[0095] As described above, the operation in which the bottom cleaning device 50 adjusts the rotation speed of the substrate cleaning brush 100 during the period from time t12 to time t13 corresponds to the brush separation preparation operation (see step S8 in Figure 3).

[0096] Subsequently, as shown in the right portion of Figure 8, at time t14 the substrate cleaning brush 100 reaches the first height position, and the supply of cleaning fluid from the back rinse nozzle 29 to the lower surface of the substrate W is stopped.

[0097] Next, as shown in Figure 9, the rotation speed of the substrate cleaning brush 100 decreases from the fourth brush rotation speed bv4 to the first brush rotation speed bv1. On the other hand, as shown in Figure 10, the rotation speed of the adsorption holding unit 21 increases from the second chuck rotation speed cv2 to the first chuck rotation speed cv1. Furthermore, the rotation speed of the adsorption holding unit 21, i.e., the rotation speed of the substrate W, is maintained at the first chuck rotation speed cv1 for a certain period of time. This spin-dries the substrate W.

[0098] Finally, as shown in Figure 10, at time t15, the rotation of the substrate W is stopped, and the cleaning and drying of the substrate W is completed.

[0099] <5> Effects of the first embodiment (a) In the above substrate cleaning process, after the central region R1 of the lower surface of the substrate W is cleaned, the central region R1 of the lower surface of the substrate W is held by the lower holding device 20. The held substrate W is then rotated. Cleaning liquid is supplied to the lower surface of the rotating substrate W from the back rinse nozzle 29. In this state, the substrate cleaning brush 100, which rotates at a first brush rotation speed bv1, rises from a first height position to a third height position and is pressed against a part of the outer region R2 of the lower surface of the substrate W. As a result, the outer region R2 of the lower surface of the substrate W is physically cleaned by the substrate cleaning brush 100, and contaminants on the outer region R2 of the lower surface are washed away.

[0100] Once the cleaning of the lower outer region R2 is complete, the substrate cleaning brush 100 descends from the third height position to the first height position and enters a standby state. During this transition, a liquid column (liquid film) of the cleaning liquid is formed between the substrate cleaning brush 100 and the substrate W due to the surface tension of the cleaning liquid for a short period of time after the substrate cleaning brush 100 and the substrate W are separated. The liquid column is broken up as the distance between the substrate cleaning brush 100 and the substrate W increases.

[0101] When a column of cleaning fluid exists between the substrate cleaning brush 100 and the substrate W, some of the contaminants adhering to the substrate cleaning brush 100 may adhere to the underside of the substrate W through the liquid column. In this case, the cleanliness of the underside of the substrate W decreases. Therefore, it is desirable that the column of cleaning fluid formed between the substrate cleaning brush 100 and the substrate W be broken up as quickly as possible after the substrate cleaning brush 100 and the substrate W separate.

[0102] Therefore, in the above-described substrate processing apparatus 1, a brush separation preparation operation is performed between the cleaning of the outer lower surface region R2 of the substrate W and the separation of the substrate cleaning brush 100 from the lower surface of the substrate W. Specifically, the rotation speed of the substrate cleaning brush 100 when it separates from the central lower surface region R1 of the substrate W (fourth brush rotation speed bv4) is adjusted to be higher than the rotation speed when cleaning the outer lower surface region R2 of the substrate W (first brush rotation speed bv1).

[0103] In this case, when the substrate cleaning brush 100 separates from the lower surface of the substrate W, a higher relative speed difference is generated between the substrate cleaning brush 100 and the substrate W compared to when the rotational speed of the substrate cleaning brush 100 is maintained at the rotational speed during cleaning of the lower outer region R2. The increase in the relative speed difference between the substrate cleaning brush 100 and the substrate W promotes the disruption of the liquid column of cleaning fluid formed between the substrate cleaning brush 100 and the substrate W. Therefore, the liquid column of cleaning fluid formed between the substrate cleaning brush 100 and the substrate W is disrupted in a shorter time. As a result, the re-adhesion and residue of contaminants stripped from the substrate W during cleaning to the lower surface of the substrate W after cleaning is reduced. Consequently, the cleanliness of the lower surface of the substrate W after cleaning is improved.

[0104] (b) In the above substrate cleaning process, the top surface cleaning device 70 cleans the top surface of the substrate W while the bottom outer region R2 is being cleaned by the substrate cleaning brush 100. Here, the period during which the top surface of the substrate W is being cleaned by the top surface cleaning device 70 and a portion of the period required for the brush separation preparation operation (for example, the period from time t12 to time t13 in Figure 9) may overlap by at least a portion.

[0105] In this case, by changing the rotation speed of the substrate cleaning brush 100 that contacts the lower outer region R2 of the substrate W, it becomes possible to clean the upper surface of the substrate W as well. This improves the overall cleaning efficiency of the substrate W.

[0106] Furthermore, in the brush separation preparation operation described above, the rotation speed of the substrate cleaning brush 100, rather than the rotation speed of the substrate W, is adjusted in order to suppress the decrease in cleanliness of the lower surface of the substrate W caused by the separation of the substrate cleaning brush 100. This allows the rotation speed of the substrate W to be maintained within a range suitable for cleaning the upper surface of the substrate W. Consequently, the cleanliness of both the upper and lower surfaces of the substrate W after cleaning is improved.

[0107] (c) In addition, during the substrate cleaning process described above, the edge cleaning device 80 cleans the outer edge of the substrate W while the lower outer region R2 is being cleaned by the substrate cleaning brush 100. Here, the period during which the outer edge of the substrate W is being cleaned by the edge cleaning device 80 and a portion of the period required for the brush separation preparation operation described above (for example, the period from time t12 to time t13 in Figure 9) may overlap by at least a portion.

[0108] In this case, by changing the rotation speed of the substrate cleaning brush 100 that contacts the lower outer region R2 of the substrate W, it becomes possible to clean the outer edge of the substrate W as well. This improves the overall cleaning efficiency of the substrate W.

[0109] Furthermore, in the brush separation preparation operation described above, the rotation speed of the substrate cleaning brush 100, rather than the rotation speed of the substrate W, is adjusted in order to suppress the decrease in cleanliness of the lower surface of the substrate W caused by the separation of the substrate cleaning brush 100. This allows the rotation speed of the substrate W to be maintained within a range suitable for cleaning the outer edges of the substrate W. Consequently, the cleanliness of the outer edges and the lower surface of the substrate W after cleaning is improved.

[0110] (d) In the above substrate cleaning process, the substrate W that has been brought into the substrate processing apparatus 1 is first held by the upper holding devices 10A and 10B. In this state, the central region R1 of the lower surface of the substrate W is cleaned by the substrate cleaning brush 100.

[0111] Therefore, when cleaning the central lower region R1, the contact position of the substrate cleaning brush 100 on the lower surface of the substrate W can be shifted away from the central lower region R1 without causing interference between the upper holding devices 10A, 10B and the substrate cleaning brush 100. In the above example, after cleaning the central lower region R1 of the substrate W, the substrate cleaning brush 100 moves away from the lower surface of the substrate W in a separated region R4 that is away from the central lower region R1. This prevents the cleanliness of the central lower region R1 of the substrate W after cleaning from decreasing due to the separation of the substrate cleaning brush 100.

[0112] After the central lower surface region R1 is cleaned, the substrate W is held by the lower holding device 20, and the outer lower surface region R2 of the substrate W is cleaned together with the upper surface and outer edge of the substrate W. After this cleaning is complete, the rotation speed of the substrate cleaning brush 100 is adjusted by a brush separation preparation operation, and the substrate cleaning brush 100 separates from the outer lower surface region R2 of the substrate W. This improves the cleanliness of the outer lower surface region R2 of the substrate W after cleaning.

[0113] Thus, in the substrate processing apparatus 1, cleaning of the central lower region R1 and the outer lower region R2 are performed in this order. This prevents a decrease in cleanliness caused by the separation of the substrate cleaning brushes 100 across the entire central lower region R1 and outer lower region R2 of the substrate W.

[0114] (e) In the substrate processing apparatus 1 described above, at the end of the multiple processes performed inside the unit housing 2, the lower outer region R2 of the substrate W is cleaned by the substrate cleaning brush 100. As a result, the substrate W is removed from the unit housing 2 with at least the lower outer region R2 kept clean.

[0115] 2. Second Embodiment Figure 11 is a schematic plan view of a substrate processing apparatus according to a second embodiment. The substrate processing apparatus 1X according to this embodiment has an indexer block 901 and a processing block 902. The indexer block 901 and the processing block 902 are arranged adjacent to each other.

[0116] The indexer block 901 includes multiple (four in this example) carrier mounting tables 910 and transport units 920. The multiple carrier mounting tables 910 are connected to the transport units 920 and are arranged in a row with some space between them. A carrier C that holds multiple substrates W is placed on each carrier mounting table 910.

[0117] The transport unit 920 is equipped with an indexer robot 931 and a control device 932. The indexer robot 931 includes a plurality (e.g., four) of hands and is configured to hold and transport the substrate W. The control device 932 includes a CPU and memory or a microcomputer and controls each component within the substrate processing apparatus 1X.

[0118] As shown in Figure 11, the processing block 902 includes cleaning units 941, 942 and a transport unit 943. The cleaning units 941, 943, and 942 are arranged adjacent to the transport unit 920 and in this order. In each cleaning unit 941, 942, a plurality (for example, four) of substrate processing devices 1 are stacked vertically. These substrate processing devices 1 are the substrate processing devices 1 shown in Figure 1. That is, in the substrate processing device 1X according to this embodiment, the substrate processing device 1 according to the first embodiment is provided as one processing unit constituting the substrate processing device 1X.

[0119] The transport unit 943 is equipped with a main robot 944. The main robot 944 includes multiple (for example, four) hands and is configured to hold and transport the substrate W.

[0120] Between the indexer block 901 and the processing block 902, multiple substrate mounting sections PASS are stacked vertically to facilitate the transfer of the substrate W between the indexer robot 931 and the main robot 944.

[0121] In the substrate processing apparatus 1X, the indexer robot 931 takes a substrate W before processing from one of the carriers C placed on the carrier mounting stage 910. The indexer robot 931 then places the substrate W before processing onto one of the substrate mounting sections PASS. Furthermore, the indexer robot 931 receives the processed substrate W placed on one of the substrate mounting sections PASS and places it into an empty carrier C.

[0122] The main robot 944 receives multiple unprocessed substrates W placed on multiple substrate mounting sections PASS. The main robot 944 then transports the multiple unprocessed substrates W into multiple substrate processing devices 1 in the cleaning sections 941 and 942. Furthermore, the main robot 944 unloads the multiple processed substrates W from the multiple substrate processing devices 1. Finally, the main robot 944 places the processed substrates W onto one of the multiple substrate mounting sections PASS.

[0123] Each substrate processing device 1, cleaning units 941 and 942, cleans the bottom surface, top surface, and outer edge of the substrate W that has been brought in. In this way, a series of operations of each component of the substrate processing device 1X are repeated, allowing a large quantity of substrates W to be cleaned with high efficiency.

[0124] 3. Other Embodiments (a) In the substrate processing apparatus 1 according to the first embodiment, the central region R1 on the lower surface of the substrate W is cleaned by the base device 30 and the lifting and rotating support unit 54 moving the substrate cleaning brush 100 relative to the substrate W held by the upper holding devices 10A and 10B, but the present invention is not limited thereto. The upper holding devices 10A and 10B may be configured to be movable relative to the substrate cleaning brush 100, which is fixed in a specific position and rotates, while holding the substrate W. In this case, the central region R1 on the lower surface of the substrate W can be cleaned by moving at least one of the substrate W and the substrate cleaning brush 100.

[0125] (b) In the substrate processing apparatus 1 according to the first embodiment, the lower outer region R2 of the substrate W is cleaned by the base device 30 and the lifting and rotating support unit 54 moving the substrate cleaning brush 100 relative to the substrate W held by the lower holding device 20, but the present invention is not limited thereto. The lower holding device 20 may be configured to be movable relative to the substrate cleaning brush 100, which is fixed in a specific position and rotates, while holding the substrate W. In this case, the lower outer region R2 of the substrate W can be cleaned by moving at least one of the substrate W and the substrate cleaning brush 100.

[0126] (c) In the substrate processing apparatus 1 according to the first embodiment, when cleaning the lower outer region R2, the rotation speed of the substrate cleaning brush 100 is maintained at a first brush rotation speed bv1, which is the same as the rotation speed of the substrate cleaning brush 100 when it is in standby mode. However, the present invention is not limited thereto. The rotation speed of the substrate cleaning brush 100 when cleaning the lower outer region R2 of the substrate W may be set to a rotation speed different from the rotation speed of the substrate cleaning brush 100 when it is in standby mode (first brush rotation speed bv1).

[0127] Furthermore, the rotational speed of the substrate cleaning brush 100 during cleaning of the lower outer region R2 should be lower than the fourth brush rotational speed bv4 when the substrate cleaning brush 100 separates from the substrate W after cleaning the lower outer region R2. Therefore, the rotational speed of the substrate cleaning brush 100 during cleaning of the lower outer region R2 may vary as long as it is within the range of higher than 0 and lower than the fourth brush rotational speed bv4.

[0128] In this case as well, after cleaning the lower outer region R2 and before the substrate cleaning brush 100 separates from the substrate W, the rotation speed of the substrate cleaning brush 100 is increased by a brush separation preparation operation to be higher than the rotation speed during cleaning the lower outer region R2. As a result, the cleanliness of the lower surface of the substrate W after cleaning due to the separation of the substrate cleaning brush 100 is improved.

[0129] (d) In the substrate processing apparatus 1 according to the first embodiment, after cleaning the central region R1 on the lower surface of the substrate W, before the substrate cleaning brush 100 separates from the substrate W, the rotation speed of the substrate cleaning brush 100 is adjusted to a third brush rotation speed bv3. Here, the third brush rotation speed bv3 is set to be higher than the first brush rotation speed bv1 and lower than the second brush rotation speed bv2, but the present invention is not limited thereto. The third brush rotation speed bv3 may be the same as the first brush rotation speed bv1, or the same as the second brush rotation speed bv2.

[0130] (e) In the substrate processing apparatus 1 according to the first embodiment, cleaning fluid is not supplied from the brush nozzles 52a and 52b to the substrate cleaning brush 100 while the central region R1 of the lower surface is being cleaned by the substrate cleaning brush 100, but the present invention is not limited thereto. Cleaning fluid may be supplied from the brush nozzles 52a and 52b to the substrate cleaning brush 100 while the central region R1 of the lower surface is being cleaned.

[0131] (f) In the substrate processing apparatus 1 according to the first embodiment, the upper surface, lower surface and outer edge of the substrate W are cleaned by the components (10A, 10B, 20, 30, 40, 50, 60, 70, 80, 90) in Figure 1, but the present invention is not limited thereto. The substrate processing apparatus 1 may have a configuration for performing treatments other than cleaning on the substrate W. For example, the substrate processing apparatus 1 may have a configuration for a coating treatment that applies a predetermined treatment liquid to the upper surface of the substrate W. Alternatively, the substrate processing apparatus 1 may have a configuration for an exposure treatment that exposes the upper surface of the substrate W, or a configuration for a temperature adjustment treatment that adjusts the temperature of the substrate W.

[0132] Thus, if the substrate processing apparatus 1 has a configuration that performs processes other than cleaning, the substrate processing apparatus 1 will perform one or more other processes in addition to cleaning the substrate W, such as coating, exposure, and temperature control. Even in this case, it is preferable that the cleaning of the lower outer region R2 by the substrate cleaning brush 100 is performed last among the multiple processes. By performing the cleaning of the lower outer region R2 by the substrate cleaning brush 100 last among the multiple processes, the cleanliness of the lower surface of the substrate W when it is finally discharged from the substrate processing apparatus 1 is improved.

[0133] (g) In the substrate processing apparatus 1 according to the first embodiment, the upper holding devices 10A and 10B are configured to be able to hold and release the outer peripheral edge of the substrate W, but the present invention is not limited thereto. The upper holding devices 10A and 10B may be configured to be able to adsorb, hold and release the lower peripheral edge of the substrate W.

[0134] (h) In the substrate processing apparatus 1 according to the first embodiment, after cleaning the lower outer region R2 of the substrate W, the rotational speed of the substrate cleaning brush 100 increases from a first brush rotational speed bv1 for cleaning the substrate W to a predetermined fourth brush rotational speed bv4. In this state, the substrate cleaning brush 100 moves downward and separates from the substrate W. However, the present invention is not limited thereto.

[0135] The substrate cleaning brush 100 may move away from the substrate W during the time it takes for the rotational speed of the substrate cleaning brush 100 to increase from the first brush rotational speed bv1 to the fourth brush rotational speed bv4. That is, the substrate cleaning brush 100 may move away from the substrate W at any point between time t12 and time t13 in Figure 9.

[0136] 4. Correspondence between each part of the embodiment and each component of the claim The following describes examples of the correspondence between each component of the claim and each component of the embodiment. Various other elements having the configuration or function described in the claim can also be used as each component of the claim.

[0137] In the above embodiment, the lower central region R1 is an example of the lower central region, the lower holding device 20 is an example of the first substrate holding part, the substrate cleaning brush 100 is an example of a brush, the lifting and rotating support part 54 is an example of a brush rotation drive part, the lower outer region R2 is an example of the lower outer region, and the base device 30 and the lifting and rotating support part 54 are examples of relative movement parts.

[0138] Furthermore, the state of the substrate cleaning brush 100 held at a first height position in the substrate processing apparatus 1 is an example of the brush's standby state, the state of the substrate cleaning brush 100 held at a third height position in the substrate processing apparatus 1 is an example of the brush's first cleaning state, the two back rinse nozzles 29 and the two brush nozzles 52a and 52b are examples of the cleaning fluid supply unit, and the control unit 9 is an example of the control unit.

[0139] Furthermore, the first brush rotation speed bv1 is an example of the first rotation speed, the fourth brush rotation speed bv4 is an example of the second rotation speed, the substrate processing apparatus 1,1X is an example of a substrate processing apparatus, the upper surface cleaning apparatus 70 is an example of an upper surface cleaning section, the upper holding devices 10A,10B are examples of a second substrate holding section, and the state of the substrate cleaning brush 100 held at a second height position in the substrate processing apparatus 1 is an example of the second cleaning state of the brush.

[0140] Furthermore, the cleaning process of the central region R1 on the lower surface of the substrate W is an example of one or more specific processes, the configuration for cleaning the central region R1 on the lower surface of the substrate W, including the upper holding devices 10A, 10B, the base device 30, and the lower surface cleaning device 50, is an example of one or more specific processing units, and the unit housing 2 is an example of a housing.

[0141] 5. Summary of the Embodiments (Paragraph 1) The substrate processing apparatus relating to Paragraph 1 is: A first substrate holding unit that holds the central region of the lower surface of the substrate by suction and rotates it around a vertical axis, A brush for cleaning the lower surface of the substrate, A brush rotation drive unit that rotates the brush around an axis in the vertical direction, A relative movement unit that moves at least one of the brush and the first substrate holding unit to transition the brush between a standby state in which the brush is separated from the substrate and a first cleaning state in which the brush is in contact with at least a portion of the outer lower surface region surrounding the central lower surface region of the lower surface of the substrate held by the first substrate holding unit, A cleaning fluid supply unit that supplies cleaning fluid to the lower surface of the substrate held by the first substrate holding unit and to at least one of the brushes, The system comprises the first substrate holding unit, the brush rotation drive unit, the relative movement unit, and a control unit that controls the cleaning fluid supply unit, The control unit, When the brush is in the first cleaning state, the first substrate holding unit and the cleaning fluid supply unit are controlled to rotate the substrate while supplying the cleaning fluid to at least one of the lower surface of the substrate and the brush. When the brush is in the first cleaning state, the brush rotation drive unit is controlled to rotate the brush at a first rotational speed to clean the lower outer region. When the brush begins to transition from the first cleaning state to the standby state, the brush rotation drive unit is controlled to rotate the brush at a second rotation speed higher than the first rotation speed.

[0142] In this substrate processing apparatus, the brush transitions from a standby state to a first cleaning state. In this case, while the substrate is rotated, cleaning fluid is supplied to at least one of the underside of the substrate and the brush, so that the underside of the substrate is physically cleaned and washed by the brush.

[0143] Once the above cleaning is complete, the brush transitions from the first cleaning state to a standby state. During this transition, a liquid column (liquid film) of the cleaning solution is formed between the brush and the substrate due to the surface tension of the cleaning solution for a short period of time after the brush and the substrate are separated. This liquid column is broken up as the distance between the brush and the substrate increases.

[0144] When a column of cleaning fluid exists between the brush and the substrate, some of the contaminants attached to the brush can adhere to the underside of the substrate through the fluid column, reducing the cleanliness of the underside of the substrate. Therefore, it is desirable that the column of cleaning fluid formed between the brush and the substrate be broken up as quickly as possible after the brush and the substrate separate.

[0145] Therefore, in the above-described substrate processing apparatus, the brush rotates at a second rotational speed higher than the first rotational speed when it separates from the lower surface of the substrate held by the first substrate holding part. In this case, a higher relative speed difference is generated between the brush and the substrate compared to when the brush rotates at the first rotational speed. The increase in the relative speed difference between the brush and the substrate promotes the disruption of the liquid column of cleaning fluid formed between the brush and the substrate. Consequently, the liquid column of cleaning fluid formed between the brush and the substrate is disrupted in a shorter time. As a result, the re-adhesion and residue of contaminants stripped from the substrate during cleaning to the lower surface of the substrate after cleaning is reduced. Consequently, the cleanliness of the lower surface of the substrate after cleaning is improved.

[0146] (Paragraph 2) In the substrate processing apparatus relating to Paragraph 1, The substrate processing apparatus is The system further includes an upper surface cleaning unit that cleans the upper surface of the substrate, which is held and rotated by the first substrate holding unit, using a cleaning solution. The control unit may clean the upper surface of the substrate by controlling the upper surface cleaning unit during at least a portion of the period during which the brush is in the first cleaning state.

[0147] In this case, when cleaning the outer area of ​​the lower surface of the substrate with the brush, or when changing the rotation speed of the brush in the first cleaning state from the first rotation speed to the second rotation speed, it becomes possible to clean the upper surface of the substrate. This improves the overall cleaning efficiency of the substrate.

[0148] Furthermore, when cleaning the upper surface of the substrate, it is desirable to maintain the substrate's rotation speed within a specific range suitable for cleaning the upper surface. Here, the cleaning conditions for the lower outer region of the substrate include at least the relative relationship between the substrate's rotation speed and the brush's rotation speed. Therefore, if the substrate's rotation speed is maintained within a specific range, the preferred rotation speed of the brush for cleaning the lower outer region of the substrate is also uniquely determined.

[0149] According to the above configuration, in order to suppress the decrease in cleanliness of the underside of the substrate caused by the separation of the brushes, the rotation speed of the brushes is adjusted when the brushes separate, rather than when the underside of the substrate is being cleaned. Therefore, the first rotation speed for cleaning the outer region of the underside of the substrate can be set to a rotation speed suitable for cleaning the outer region of the underside of the substrate. As a result, the cleanliness of the top and bottom surfaces of the substrate after cleaning is improved.

[0150] In other words, with the above configuration, the rotation speed of the brushes, rather than the rotation speed of the substrate, is adjusted to suppress the decrease in cleanliness of the underside of the substrate caused by the spacing of the brushes. This allows the rotation speed of the substrate to be maintained within a range suitable for cleaning the top surface. Consequently, the cleanliness of both the top and bottom surfaces of the substrate after cleaning is improved.

[0151] (Paragraph 3) In the substrate processing apparatus relating to Paragraph 1 or Paragraph 2, The substrate processing apparatus is The substrate further comprises a second substrate holding portion that holds the outer edge or peripheral edge of the substrate without rotating the substrate, The relative movement unit is configured to move at least one of the brush and the second substrate holding unit, thereby enabling the brush to transition to a second cleaning state in which the brush contacts at least a portion of the central region of the lower surface of the substrate held by the second substrate holding unit. The control unit, With the substrate held by the second substrate holding portion, the relative movement portion is controlled to move the brush to the second cleaning state and clean the central region of the lower surface. After cleaning the central region of the lower surface of the substrate, the substrate is released from the second substrate holder by controlling the first substrate holder and the second substrate holder, and the first substrate holder holds the central region of the lower surface of the substrate by suction. With the substrate held by the first substrate holding portion, the brush may be moved to the first cleaning state by controlling the relative movement portion.

[0152] In this case, when cleaning the central region of the underside of the substrate, the substrate is held at its outer edge or periphery by the second substrate holder. Therefore, when transitioning the brush from the second cleaning state to the standby state, the position of the brush on the underside of the substrate can be shifted away from the central region of the underside without the second substrate holder and the brush interfering with each other. In other words, when the brush is moved away from the underside of the substrate, the position of the brush on the underside of the substrate can be moved to a region away from the central region of the underside. This prevents a decrease in the cleanliness of the central region of the underside of the substrate after cleaning due to the separation of the brush.

[0153] Next, the substrate is held by the first substrate holder. In this state, the outer area of ​​the lower surface of the substrate is cleaned. After cleaning is complete, as the brush separates from the lower surface of the substrate, the brush rotates at a second rotational speed. This improves the cleanliness of the outer area of ​​the lower surface of the substrate after cleaning.

[0154] As a result, a decrease in cleanliness caused by the spacing of the brushes is prevented across the entire central and outer regions of the underside of the substrate.

[0155] (Article 4) In a substrate processing apparatus relating to any one of paragraphs 1 to 3, The substrate processing apparatus is One or more specific processing units that perform one or more predetermined specific processing on the substrate, other than the cleaning process which involves moving the brush to the first cleaning state, The device further comprises a housing that accommodates the first substrate holding unit, the brush, the brush rotation drive unit, the relative movement unit, and the one or more specific processing units, The substrate undergoes a cleaning process, which involves moving the brush to the first cleaning state, and one or more specific processes, between the time the substrate is brought into the housing and the time the substrate is removed from the housing. The cleaning process, which involves moving the brush to the first cleaning state, may be performed last among the multiple processes.

[0156] In this case, at the end of the multiple processes performed inside the enclosure, the outer area of ​​the underside of the circuit board is cleaned with a brush. When the cleaning of the outer area of ​​the underside of the circuit board is complete, the rotation speed of the brush is adjusted to prevent the re-adhesion of contaminants after cleaning. As a result, the circuit board is removed from the enclosure with at least the outer area of ​​the underside kept clean.

[0157] (Paragraph 5) The substrate processing method relating to Paragraph 5 is: The steps include: rotating the substrate around a vertical axis while holding the central region of the lower surface of the substrate by suction using the first substrate holding part; The steps include cleaning the lower surface of the substrate using a brush, The steps include rotating the brush around an axis in the vertical direction, The steps include moving at least one of the brush and the first substrate holding portion to transition the brush between a standby state in which the brush is separated from the substrate and a first cleaning state in which the brush is in contact with at least a portion of the outer lower surface region surrounding the central lower surface region of the lower surface of the substrate held by the first substrate holding portion, The step of supplying cleaning fluid to the lower surface of the substrate and at least one of the brush while rotating the substrate held by the first substrate holding part when the brush is in the first cleaning state, The step of rotating the brush is, When the brush is in the first cleaning state, the brush is rotated at a first rotational speed to clean the outer region of the lower surface, This includes rotating the brush at a second rotational speed higher than the first rotational speed when the brush begins to transition from the first cleaning state to the standby state.

[0158] In this substrate processing method, the brush transitions from a standby state to a first cleaning state. In this case, while the substrate is rotated, cleaning fluid is supplied to at least one of the underside of the substrate and the brush, so that the underside of the substrate is physically cleaned and washed by the brush.

[0159] Once the above cleaning is complete, the brush transitions from the first cleaning state to a standby state. During this transition, a liquid column (liquid film) of the cleaning solution is formed between the brush and the substrate due to the surface tension of the cleaning solution for a short period of time after the brush and the substrate are separated. This liquid column is broken up as the distance between the brush and the substrate increases.

[0160] When a column of cleaning fluid exists between the brush and the substrate, some of the contaminants attached to the brush can adhere to the underside of the substrate through the fluid column, reducing the cleanliness of the underside of the substrate. Therefore, it is desirable that the column of cleaning fluid formed between the brush and the substrate be broken up as quickly as possible after the brush and the substrate separate.

[0161] Therefore, in the above substrate processing method, when the brush separates from the lower surface of the substrate held by the first substrate holding part, it rotates at a second rotational speed higher than the first rotational speed. In this case, a higher relative speed difference is generated between the brush and the substrate compared to when the brush rotates at the first rotational speed. The increase in the relative speed difference between the brush and the substrate promotes the disruption of the liquid column of cleaning fluid formed between the brush and the substrate. Consequently, the liquid column of cleaning fluid formed between the brush and the substrate is disrupted in a shorter time. As a result, the re-adhesion and residue of contaminants stripped from the substrate during cleaning to the lower surface of the substrate after cleaning is reduced. As a result, the cleanliness of the lower surface of the substrate after cleaning is improved.

[0162] (Paragraph 6) In the substrate processing method relating to Paragraph 5, The substrate processing method is The process further includes the step of cleaning the upper surface of the substrate, which is held and rotated by the first substrate holding unit, using a cleaning solution by the upper surface cleaning unit, The step of cleaning the upper surface of the substrate may be performed during at least a portion of the period in which the brush is in the first cleaning state.

[0163] In this case, when cleaning the outer area of ​​the underside of the substrate with the brush, or when changing the rotation speed of the brush in the first cleaning state from the first rotation speed to the second rotation speed, it becomes possible to clean the top surface of the substrate as well. This improves the overall cleaning efficiency of the substrate.

[0164] Furthermore, when cleaning the upper surface of the substrate, it is desirable to maintain the substrate's rotation speed within a specific range suitable for cleaning the upper surface. Here, the cleaning conditions for the lower outer region of the substrate include at least the relative relationship between the substrate's rotation speed and the brush's rotation speed. Therefore, if the substrate's rotation speed is maintained within a specific range, the preferred rotation speed of the brush for cleaning the lower outer region of the substrate is also uniquely determined.

[0165] According to the above configuration, in order to suppress the decrease in cleanliness of the underside of the substrate caused by the separation of the brushes, the rotation speed of the brushes is adjusted when the brushes separate, rather than when the underside of the substrate is being cleaned. Therefore, the first rotation speed for cleaning the outer region of the underside of the substrate can be set to a rotation speed suitable for cleaning the outer region of the underside of the substrate. As a result, the cleanliness of the top and bottom surfaces of the substrate after cleaning is improved.

[0166] In other words, according to the method described above, the rotation speed of the brushes, rather than the rotation speed of the substrate, is adjusted to suppress the decrease in cleanliness of the underside of the substrate caused by the spacing of the brushes. This allows the rotation speed of the substrate to be maintained within a range suitable for cleaning the top surface. Consequently, the cleanliness of both the top and bottom surfaces of the substrate after cleaning is improved.

[0167] (Paragraph 7) In the substrate processing method relating to Paragraph 5 or Paragraph 6, The substrate processing method is The steps include: holding the outer edge or peripheral edge of the substrate using a second substrate holding portion without rotating the substrate; The steps include moving at least one of the brush and the second substrate holding portion to move the brush to a second cleaning state in which the brush contacts at least a portion of the central region of the lower surface of the substrate held by the second substrate holding portion, thereby cleaning the central region of the lower surface, The method further includes the step of cleaning the central region of the lower surface of the substrate, and then releasing the substrate from the second substrate holding portion. The step of adsorbing and holding the central region of the lower surface of the substrate using the first substrate holding portion is performed after the step of releasing the substrate from the second substrate holding portion. The brush may transition to the first cleaning state while the substrate is being held by the first substrate holding portion.

[0168] In this case, when cleaning the central region of the underside of the substrate, the substrate is held at its outer edge or periphery by the second substrate holder. Therefore, when transitioning the brush from the second cleaning state to the standby state, the position of the brush on the underside of the substrate can be shifted away from the central region of the underside without the second substrate holder and the brush interfering with each other. In other words, when the brush is moved away from the underside of the substrate, the position of the brush on the underside of the substrate can be moved to a region away from the central region of the underside. This prevents a decrease in the cleanliness of the central region of the underside of the substrate after cleaning due to the separation of the brush.

[0169] Next, the substrate is held by the first substrate holder. In this state, the outer area of ​​the lower surface of the substrate is cleaned. After cleaning is complete, as the brush separates from the lower surface of the substrate, the brush rotates at a second rotational speed. This improves the cleanliness of the outer area of ​​the lower surface of the substrate after cleaning.

[0170] As a result, a decrease in cleanliness caused by the spacing of the brushes is prevented across the entire central and outer regions of the underside of the substrate.

[0171] (Article 8) In the substrate processing method relating to any one of Articles 5 to 7, The substrate processing method is The process further includes the step of performing one or more predetermined specific processes on the substrate other than the cleaning process, which involves moving the brush to the first cleaning state. The cleaning process and the one or more specific processes are performed inside the housing. The substrate undergoes a plurality of processes, including the cleaning process and the one or more specified processes, between the time the substrate is brought into the housing and the time it is removed from the housing. The cleaning process, which involves moving the brush to the first cleaning state, may be performed last among the multiple processes.

[0172] In this case, at the end of the multiple processes performed inside the enclosure, the outer area of ​​the underside of the circuit board is cleaned with a brush. When the cleaning of the outer area of ​​the underside of the circuit board is complete, the rotation speed of the brush is adjusted to prevent the re-adhesion of contaminants after cleaning. As a result, the circuit board is removed from the enclosure with at least the outer area of ​​the underside kept clean.

[0173] According to the substrate processing apparatus and substrate processing method of the above embodiment, the manufacturing yield of substrates caused by poor cleaning during substrate cleaning is improved. This reduces the wasteful consumption of cleaning solution. Therefore, it is possible to improve the efficiency of resource utilization and contribute to the preservation of the global environment. [Explanation of Symbols]

[0174] 1…Substrate processing device, 1X…Substrate processing device, 2…Unit housing, 2x…Loading / unloading port, 9…Control unit, 10A, 10B…Upper holding device, 11A, 11B…Lower chuck, 12A, 12B…Upper chuck, 20…Lower holding device, 21…Suction holding part, 29…Back rinse nozzle, 30…Base device, 31…Linear guide, 32…Movable base, 40…Transfer device, 41…Support pin, 50…Bottom cleaning device, 52a, 52b…Brush nozzle, 53…Gas ejection part, 54…Lifting / lowering rotation support part, 60…Cup device, 61…Cup, 70…Top cleaning device, 71…Rotating support shaft, 72, 82…Arm, 73…Spray nozzle, 80…End cleaning device, 81…Rotating support shaft, 83…Bevel brush, 90…Opening / closing device, 91…Shutter, 1 00…Substrate cleaning brush, 901…Indexer block, 902…Processing block, 910…Carrier mounting platform, 920…Transportation unit, 931…Indexer robot, 932…Control device, 941, 942…Cleaning unit, 943…Transportation unit, 944…Main robot, C…Carrier, P1…First horizontal position, P2…Second horizontal position, P3…Third horizontal position, PASS…Substrate mounting unit, R1…Bottom central region, R2…Bottom outer region, R3…Contact region, R4…Separation region, R5…Gap region, W…Substrate, WC…Center, bv1…First brush rotation speed, bv2…Second brush rotation speed, bv3…Third brush rotation speed, bv4…Fourth brush rotation speed, cv1…First chuck rotation speed, cv2…Second chuck rotation speed

Claims

1. A first substrate holding unit that holds the central region of the lower surface of the substrate by suction and rotates it around a vertical axis, A brush for cleaning the lower surface of the substrate, A brush rotation drive unit that rotates the brush around an axis in the vertical direction, A relative movement unit moves at least one of the brush and the first substrate holding unit to transition the brush between a standby state in which the brush is separated from the substrate and a first cleaning state in which the brush is in contact with at least a portion of the outer lower surface region surrounding the central lower surface region of the lower surface of the substrate held by the first substrate holding unit, A cleaning fluid supply unit that supplies cleaning fluid to the lower surface of the substrate held by the first substrate holding unit and to at least one of the brushes, The system comprises a control unit that controls the first substrate holding unit, the brush rotation drive unit, the relative movement unit, and the cleaning fluid supply unit, The control unit, When the brush is in the first cleaning state, the first substrate holding unit and the cleaning fluid supply unit are controlled to rotate the substrate while supplying the cleaning fluid to at least one of the lower surface of the substrate and the brush. When the brush is in the first cleaning state, the brush rotation drive unit is controlled to rotate the brush at a first rotational speed to clean the lower outer region. A substrate processing apparatus that controls the brush rotation drive unit to rotate the brush at a second rotation speed higher than the first rotation speed when the brush begins to transition from the first cleaning state to the standby state.

2. The system further includes an upper surface cleaning unit that cleans the upper surface of the substrate, which is held and rotated by the first substrate holding unit, using a cleaning solution. The substrate processing apparatus according to claim 1, wherein the control unit cleans the upper surface of the substrate by controlling the upper surface cleaning unit during at least a portion of the period in which the brush is in the first cleaning state.

3. The substrate further comprises a second substrate holding portion that holds the outer edge or peripheral edge of the substrate without rotating the substrate, The relative movement unit is configured to move at least one of the brush and the second substrate holding unit, thereby enabling the brush to transition to a second cleaning state in which the brush contacts at least a portion of the central region of the lower surface of the substrate held by the second substrate holding unit. The control unit, With the substrate held by the second substrate holding portion, the relative movement portion is controlled to move the brush to the second cleaning state and clean the central region of the lower surface. After cleaning the central region of the lower surface of the substrate, the substrate is released from the second substrate holder by controlling the first substrate holder and the second substrate holder, and the first substrate holder holds the central region of the lower surface of the substrate by suction. The substrate processing apparatus according to claim 1 or 2, wherein the substrate is held by the first substrate holding part, and the brush is moved to the first cleaning state by controlling the relative moving part.

4. One or more specific processing units perform one or more predetermined specific processing operations on the substrate other than the cleaning process, which involves moving the brush to the first cleaning state. The system further comprises a housing that accommodates the first substrate holding unit, the brush, the brush rotation drive unit, the relative movement unit, and the one or more specific processing units, The substrate undergoes a cleaning process, which involves moving the brush to the first cleaning state, and one or more specific processes, between the time the substrate is brought into the housing and the time the substrate is removed from the housing. The substrate processing apparatus according to claim 1 or 2, wherein the cleaning process, which involves moving the brush to the first cleaning state, is performed last among the plurality of processes.

5. The steps include: rotating the substrate around a vertical axis while holding the central region of the lower surface of the substrate by suction using the first substrate holding part; The steps include cleaning the lower surface of the substrate using a brush, The steps include rotating the brush around an axis in the vertical direction, The steps include moving at least one of the brush and the first substrate holding portion to transition the brush between a standby state in which the brush is separated from the substrate and a first cleaning state in which the brush is in contact with at least a portion of the outer lower surface region surrounding the central lower surface region of the lower surface of the substrate held by the first substrate holding portion, The step of supplying cleaning fluid to the lower surface of the substrate and at least one of the brush while rotating the substrate held by the first substrate holding part when the brush is in the first cleaning state, The step of rotating the brush is, When the brush is in the first cleaning state, the brush is rotated at a first rotational speed to clean the outer region of the lower surface, A substrate processing method comprising rotating the brush at a second rotational speed higher than the first rotational speed when the brush begins to transition from the first cleaning state to the standby state.

6. The process further includes the step of cleaning the upper surface of the substrate, which is held and rotated by the first substrate holding unit, using a cleaning solution by the upper surface cleaning unit, The substrate processing method according to claim 5, wherein the step of cleaning the upper surface of the substrate is performed during at least a portion of the period during which the brush is in the first cleaning state.

7. The steps include: holding the outer edge or peripheral edge of the substrate using a second substrate holding portion without rotating the substrate; The steps include moving at least one of the brush and the second substrate holding portion to move the brush to a second cleaning state in which the brush contacts at least a portion of the central region of the lower surface of the substrate held by the second substrate holding portion, thereby cleaning the central region of the lower surface, The method further includes the step of cleaning the central region of the lower surface of the substrate, and then releasing the substrate from the second substrate holding portion. The step of adsorbing and holding the central region of the lower surface of the substrate using the first substrate holding portion is performed after the step of releasing the substrate from the second substrate holding portion. The substrate processing method according to claim 5 or 6, wherein the brush is moved to the first cleaning state while the substrate is held by the first substrate holding portion.

8. The process further includes the step of performing one or more predetermined specific processes on the substrate other than the cleaning process, which involves moving the brush to the first cleaning state. The cleaning process and the one or more specific processes are performed inside the housing. The substrate undergoes a plurality of processes, including the cleaning process and the one or more specified processes, between the time the substrate is brought into the housing and the time it is removed from the housing. The substrate processing method according to claim 5 or 6, wherein the cleaning process, which involves moving the brush to the first cleaning state, is performed last among the plurality of processes.

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