Method for manufacturing a light-emitting device, light-emitting device

Abstract

To provide a method for manufacturing a light-emitting device and a light-emitting device that can improve reliability. [Solution] The manufacturing method of this light-emitting device comprises the steps of: preparing a first structure having a first support substrate, a peeling portion, and a light-transmitting portion in that order; preparing a second structure having a plurality of electrodes 35 on the lower surface side of a plurality of light-emitting elements 30 and temporarily fixed to a second support substrate via a temporary fixing layer on the lower surface side; arranging the light-transmitting portion provided on the first structure and the upper surfaces of the plurality of light-emitting elements temporarily fixed to the second support substrate facing each other, irradiating the temporary fixing layer with laser light, and transferring the plurality of light-emitting elements to the light-transmitting portion 60; forming a light-shielding portion 40 containing a filler between the plurality of light-emitting elements; joining the electrodes of the plurality of light-emitting elements to the substrate; arranging a resin portion containing a filler between the plurality of light-emitting elements and the substrate in which the concentration of the filler contained in the resin portion containing the filler is lower than the concentration of the filler contained in the light-shielding portion; and peeling the first support substrate from the first structure.

Description

[Technical Field]

[0001] This disclosure relates to a method for manufacturing a light-emitting device and to a light-emitting device. [Background technology]

[0002] For example, a method for manufacturing a monochromatic chip-scale package type light-emitting diode element is disclosed, which includes the following steps: First, a release layer is prepared, and a supernatant light-transmitting layer and a photoluminescence layer are sequentially arranged and stacked on the release layer using a manufacturing process such as spraying, printing, or molding. Then, a photoluminescence sheet is placed on the release layer with the photoluminescence layer facing upwards. Multiple LED semiconductor dies are arranged as an array on the photoluminescence layer, and the LED semiconductor dies are covered with the photoluminescence layer with their upper surfaces facing downwards. A reflective structure is placed inside the groove to cover the edges of the LED semiconductor dies and the edges of the photoluminescence structure. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2017-168819 [Overview of the project] [Problems that the invention aims to solve]

[0004] This disclosure aims to provide a method for manufacturing a light-emitting device that can improve reliability, and a light-emitting device itself. [Means for solving the problem]

[0005] A method for manufacturing a light-emitting device according to one embodiment of the present disclosure is a step of preparing a first structure having a first support substrate, a peeling portion, and a light-transmitting portion in that order; a step of preparing a second structure having a second support substrate and a plurality of light-emitting elements temporarily fixed to the second support substrate, wherein each of the plurality of light-emitting elements has an upper surface and a lower surface, has a plurality of electrodes on the lower surface side and is temporarily fixed to the second support substrate on the lower surface side via a temporary fixing layer; and a step of preparing a second structure having the light-transmitting portion provided on the first structure and the plurality of light-emitting elements temporarily fixed to the second support substrate. The process includes: arranging the multiple light-emitting elements with their upper surfaces facing each other and transferring them to the light-transmitting portion by irradiating the temporary fixing layer with laser light; forming a light-shielding portion containing a filler between the multiple light-emitting elements; joining the electrodes of the multiple light-emitting elements to the substrate; arranging a resin portion containing a filler in at least a part of the space between the multiple light-emitting elements and the substrate, wherein the concentration of the filler contained in the resin portion is lower than the concentration of the filler contained in the light-shielding portion; and peeling the first support substrate from the first structure.

[0006] A light-emitting device according to one embodiment of the present disclosure includes a substrate, a plurality of light-emitting elements disposed on the substrate, a light-shielding portion provided between the plurality of light-emitting elements and covering the sides of each of the plurality of light-emitting elements, a resin portion provided between at least a portion of the space between the plurality of light-emitting elements and the substrate, and between the light-shielding portion and the substrate, and a light-transmitting portion covering the upper surface of the plurality of light-emitting elements, wherein the light-shielding portion and the resin portion contain a filler, and the concentration of the filler contained in the resin portion is lower than the concentration of the filler contained in the light-shielding portion. [Effects of the Invention]

[0007] According to one embodiment of this disclosure, a method for manufacturing a light-emitting device and a light-emitting device that can improve reliability can be provided. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic perspective view showing the light-emitting device according to this embodiment. [Figure 2] It is a perspective view schematically showing a light-emitting device according to this embodiment with a part of its configuration omitted. [Figure 3] It is a top view schematically showing a light-emitting device according to this embodiment. [Figure 4] It is a cross-sectional view taken along line IV-IV of FIG. 3. [Figure 5] It is a partially enlarged view of the light-emitting element in FIG. 4 and its vicinity. [Figure 6A] It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. [Figure 6B] It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. [Figure 6C] It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. <00S0076> [Figure 6D] It is a top view for explaining the manufacturing process of the light-emitting device according to this embodiment. [Figure 6E] It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. <M000081>It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. [Figure 6G] It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. [Figure 6H] It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. [Figure 6I] It is a cross-sectional view for explaining the manufacturing process of the light-emitting device according to this embodiment. [Figure 7] It is a partially enlarged view of the light-emitting element in the light-emitting device according to Modification 1 and its vicinity. [Figure 8] It is a partially enlarged view of the light-emitting element in the light-emitting device according to Modification 2 and its vicinity. <C000092>

Embodiments for Carrying Out the Invention

[0009] Hereinafter, the light-emitting device according to this disclosure (which may be referred to as the "light-emitting device according to the embodiment") will be described with reference to the drawings. In the following description, terms indicating specific directions or positions (for example, "up," "down," and other terms including these terms) will be used as needed. However, the use of such terms is for the purpose of facilitating the understanding of the invention with reference to the drawings, and the meaning of such terms does not limit the technical scope of this disclosure. Furthermore, parts with the same reference numerals appearing in multiple drawings indicate the same or equivalent parts or components.

[0010] Furthermore, the embodiments shown below are illustrative examples of light-emitting devices and the like that embody the technical concept of the present invention, and do not limit the present invention to the following. Also, the dimensions, materials, shapes, relative arrangements, etc. of the components described below are intended to be illustrative, and not to limit the scope of the present invention unless otherwise specified. In addition, the content described in one embodiment is applicable to other embodiments and modifications. Furthermore, the size and positional relationships of the members shown in the drawings may be exaggerated in order to clarify the explanation. In addition, in order to avoid the drawings becoming excessively complex, schematic diagrams that omit the illustration of some elements may be used, or end view diagrams that show only the cross-section may be used as cross-sectional views.

[0011] <Embodiment> The light-emitting device according to this disclosure comprises a substrate, a plurality of light-emitting elements disposed on the substrate, a light-shielding portion provided between the plurality of light-emitting elements and covering the sides of each of the plurality of light-emitting elements, a resin portion provided between at least a portion of the space between the plurality of light-emitting elements and the substrate, and between the light-shielding portion and the substrate, and a light-transmitting portion covering the upper surface of the plurality of light-emitting elements, wherein the light-shielding portion and the resin portion contain a filler, and the concentration of the filler contained in the resin portion is lower than the concentration of the filler contained in the light-shielding portion.

[0012] [Light-emitting device 1] As an example of a light-emitting device according to this disclosure, light-emitting device 1 will be described. Figure 1 is a schematic perspective view showing the light-emitting device according to this embodiment. Figure 2 is a schematic perspective view showing the light-emitting device according to this embodiment with some of its components omitted. Figure 3 is a schematic top view showing the light-emitting device according to this embodiment. Figure 4 is a cross-sectional view taken along line IV-IV in Figure 3. Figure 5 is a partially enlarged view of the light-emitting element and its vicinity in Figure 4.

[0013] In each drawing, for reference, mutually orthogonal X, Y, and Z axes are shown as needed. The direction parallel to the X axis is called the X direction, the direction parallel to the Y axis is called the Y direction, and the direction parallel to the Z axis is called the Z direction. Furthermore, in the X direction, the direction the arrow is pointing is called the +X direction, and the opposite direction of the +X direction is called the -X direction. In the Y direction, the direction the arrow is pointing is called the +Y direction, and the opposite direction of the +Y direction is called the -Y direction. In the Z direction, the direction the arrow is pointing is called the +Z direction, and the opposite direction of the +Z direction is called the -Z direction. However, these do not restrict the orientation when using the light-emitting device, and the orientation of the light-emitting device is arbitrary. Also, viewing an object from the +Z direction toward the -Z direction is called a top view.

[0014] As illustrated in Figures 1 to 5, the light-emitting device 1 includes a substrate 10, a plurality of light-emitting elements 30, a light-shielding section 40, a resin section 50, and a light-transmitting section 60.

[0015] Multiple light-emitting elements 30 are arranged on the substrate 10. The multiple light-emitting elements 30 can be arranged, for example, in a matrix when viewed from above. The multiple light-emitting elements 30 can be driven individually. The multiple light-emitting elements 30 may be driven individually by the substrate 10 as a semiconductor integrated circuit substrate such as an ASIC (Application Specific Integrated Circuit), or by an electrical circuit provided outside the light-emitting device 1.

[0016] The light-shielding portion 40 is provided between the multiple light-emitting elements 30 and covers the sides of each of the multiple light-emitting elements 30. The light-shielding portion 40 is made of a resin containing a filler. The filler contained in the light-shielding portion 40 has, for example, light reflectivity. By covering the sides of each of the multiple light-emitting elements 30 with the light-shielding portion 40, the light emitted from the sides of the multiple light-emitting elements 30 can be reflected towards the light-transmitting portion 60, thereby increasing the efficiency of light extraction and improving the brightness of the light-emitting device 1.

[0017] The upper surface of the light-shielding portion 40 is, for example, flat. The lower surface of the light-shielding portion 40 may or may not be flat. In the illustrated example, the light-shielding portion 40 is provided in a fillet shape between a plurality of light-emitting elements 30. In this case, the lower surface of the light-shielding portion 40 is a curved surface that is convex toward the upper surface. By providing the light-shielding portion 40 in a fillet shape, even if the thickness of the light-shielding portion 40 is partially thinner than the thickness of the light-emitting elements 30, the entire side surface of the light-emitting elements 30 can be covered by the light-shielding portion 40. This makes it possible to improve the light reflection efficiency of the light-shielding portion 40 for light emitted from the sides of the plurality of light-emitting elements 30.

[0018] The resin portion 50 is provided in at least a portion of the space between the plurality of light-emitting elements 30 and the substrate 10, and between the light-shielding portion 40 and the substrate 10. The upper surface of the resin portion 50 is in contact with, for example, the lower surfaces of each of the plurality of light-emitting elements 30 and the lower surface of the light-shielding portion 40. The resin portion 50 covers part or all of the side surfaces of the electrodes 35 of the light-emitting elements 30. The resin portion 50 contains a filler. The filler contained in the resin portion 50 has, for example, light reflectivity. The concentration of the filler contained in the resin portion 50 is lower than the concentration of the filler contained in the light-shielding portion 40. Here, the concentration of the filler in the light-shielding portion 40 refers to the proportion of the weight of the filler contained in the light-shielding portion 40 to the total weight of the light-shielding portion 40, and is expressed in units of weight %.

[0019] The light-transmitting portion 60 covers the upper surfaces of the multiple light-emitting elements 30. The light-transmitting portion 60 also covers the upper surface of the light-shielding portion 40. In the illustrated example, the light-transmitting portion 60 includes a second region 62 provided on the upper surface of each of the multiple light-emitting elements 30, which does not include the wavelength conversion member, and a first region 61 provided on the second region 62 which includes the wavelength conversion member. The second region 62 transmits light incident from the light-emitting elements 30. The first region 61 converts the light incident from the light-emitting elements 30 through the second region 62 into light of a different wavelength and emits it. The first region 61 may emit some of the light incident through the second region 62 without converting it into light of a different wavelength, or it may convert all of the light incident through the second region 62 into light of a different wavelength and emit it. If wavelength conversion is not necessary, the light-transmitting portion 60 does not need to include the first region 61 which includes the wavelength conversion member.

[0020] Furthermore, the light-emitting device 1 may include a package substrate 20, a wire 70, and a covering member 80. In the example shown in Figures 1 to 5, the substrate 10 is mounted on the upper surface 20a of the package substrate 20. On the upper surface 10a of the substrate 10, the first terminal 11 is located outside the area where the multiple light-emitting elements 30 are arranged. The package substrate 20 is larger than the substrate 10 when viewed from above. On the upper surface 20a of the package substrate 20, the second terminal 22 is located outside the area on which the substrate 10 is mounted. The first terminal 11 of the substrate 10 is electrically connected to the second terminal 22 of the package substrate 20 by the wire 70. The first terminal 11, the second terminal 22, and the wire 70 are covered by the covering member 80, which is located on the outer periphery of the upper surface 10a of the substrate 10 and the outer periphery of the upper surface 20a of the package substrate 20. The light-transmitting portion 60 may be located inside the covering member 80 when viewed from above.

[0021] Note that in Figure 2, for illustrative purposes, a portion of the light-transmitting portion 60 and the covering member 80 has been omitted, and a portion of the light-emitting element 30 and the wire 70, etc., are made visible.

[0022] In the light-emitting device 1, the resin portion 50 provided in at least a portion of the space between the multiple light-emitting elements 30 and the substrate 10 increases the connection strength between the light-emitting elements 30 and the substrate 10, thereby improving the reliability of the light-emitting device 1. Furthermore, the resin portion 50 provided in at least a portion of the space between the multiple light-emitting elements 30 and the substrate 10 can reflect the light emitted from the lower surface of the light-emitting elements 30 towards the light-transmitting portion 60. This increases the efficiency of light extraction and improves the brightness of the light-emitting device 1.

[0023] Furthermore, the resin portion 50 provided between the light-shielding portion 40 and the substrate 10 can reflect light leaking from the light-shielding portion 40 towards the light-transmitting portion 60. This increases the efficiency of light extraction and improves the brightness of the light-emitting device 1. In particular, when the concentration of the filler contained in the resin portion 50 is greater than 0 and 30% by weight or less, the effect of reflecting light leaking from the light-shielding portion 40 towards the light-transmitting portion 60 becomes significant.

[0024] Furthermore, by making the concentration of filler in the resin part 50 lower than the concentration of filler in the light-shielding part 40, the resin ratio around the electrodes 35 of the light-emitting element 30 can be increased while maintaining the light reflection efficiency for light emitted from the side of the light-emitting element 30. As a result, the occurrence of cracks in the resin part 50 due to thermal shock or the like can be reduced.

[0025] The following describes each component of the light-emitting device 1.

[0026] (Circuit board 10) The substrate 10 includes a flat support member and wiring arranged on the upper surface of the support member. The substrate 10 has an element mounting area 10r on its upper surface 10a on which a plurality of light-emitting elements 30 are mounted, and wiring is arranged in the element mounting area 10r. The substrate 10 has a plurality of first terminals 11 located on the upper surface 10a outside the element mounting area 10r, and the first terminals 11 are electrically connected to the wiring arranged in the element mounting area 10r.

[0027] In a top view, the substrate 10 and the element mounting area 10r can be, for example, a rectangle having a long side and a short side. Multiple light-emitting elements 30 are mounted in a matrix on the element mounting area 10r. The multiple light-emitting elements 30 are electrically connected to one of the first terminals 11. The multiple light-emitting elements 30 can be connected in series or in parallel to the first terminal 11 as, for example, groups of a predetermined number. The element mounting area 10r can have, for example, a long side length of 8 mm or more and 18 mm or less, and a short side length of 2 mm or more and 6 mm or less.

[0028] Each first terminal 11 is, for example, approximately circular, approximately elliptical, or approximately rectangular. The first terminals 11 are arranged in a row along the opposing long sides of the rectangular element mounting area 10r on the upper surface 10a of the substrate 10, spaced apart from each other and sandwiching the element mounting area 10r. The spacing between adjacent first terminals 11 may or may not be constant. For example, the spacing between adjacent first terminals 11 can be 20 μm or more and 100 μm or less. One end of a wire 70 is connected to a first terminal 11.

[0029] The substrate 10 is, for example, a semiconductor substrate such as silicon. On the upper surface 10a of the substrate 10, areas where wiring is not arranged are covered with, for example, an insulating film. Wiring may also be arranged inside or on the bottom surface of the support member. For example, as the substrate 10, an integrated circuit board can be used which integrates circuits for individually driving and controlling a plurality of light-emitting elements 30.

[0030] Examples of materials for the first terminal 11 and the wiring include metals such as Cu, Ag, Au, Al, Pt, Ti, W, Pd, Fe, and Ni, and / or alloys containing at least these metals.

[0031] (Package substrate 20) The package substrate 20 includes a flat substrate and wiring arranged at least on the upper surface of the substrate. The package substrate 20 has a substrate mounting area 20r on its upper surface 20a on which the substrate 10 is placed, and further has a second terminal 22 on the upper surface 20a outside the substrate mounting area 20r. The substrate mounting area 20r is the area on which the substrate 10 is placed. The substrate mounting area 20r is set to have an area approximately equivalent to the top view shape of the substrate 10. If the substrate 10 is rectangular in top view, the substrate mounting area 20r can also be rectangular. Here, "approximately equivalent" means that errors caused by material tolerances and mounting tolerances are included as an allowable range.

[0032] Each second terminal 22 is, for example, approximately circular, approximately elliptical, or approximately rectangular in shape. The second terminals 22 are spaced apart from each other on the upper surface 20a of the package substrate 20 and are arranged in a row along the opposing long sides of the rectangle, sandwiching the substrate mounting area 20r. The spacing between adjacent second terminals 22 may or may not be constant. For example, the spacing between adjacent second terminals 22 can be 20 μm or more and 100 μm or less. The other end of the wire 70 is connected to the second terminal 22.

[0033] The substrate constituting the package substrate 20 is preferably made of a material with high heat dissipation properties, and more preferably a material with high light shielding properties and substrate strength. Specifically, examples include metals such as Al and Cu, ceramics such as aluminum oxide, aluminum nitride, silicon nitride, and mullite, resins such as phenolic resin, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), and polyphthalamide (PPA), as well as graphite and composite materials composed of resin and metal or ceramics (for example, an inlay substrate in which a metal component is embedded in resin). The substrate can be a flat plate, or a substrate with a recess on its upper surface can be used. In this case, the bottom of the recess of the package substrate 20 is used as the substrate mounting area 20r, and the substrate 10 can be placed in the recess.

[0034] The package substrate 20 may have wiring on the surface of the substrate mounting area 20r for mounting the substrate 10.

[0035] (light-emitting element) The light-emitting element 30 can be, for example, a square shape with sides of 40 μm to 100 μm when viewed from above. The light-emitting element 30 has positive and negative electrodes 35 on the same side and is flip-chip mounted on the substrate 10 with the side with the electrodes 35 facing downwards. In this case, the upper surface, which is located opposite the side where the electrodes 35 are placed, becomes the main light-extracting surface of the light-emitting element 30.

[0036] In the light-emitting device 1, the light-emitting elements 30 are arranged on the substrate 10 at predetermined intervals in each of the matrix directions. The size and number of light-emitting elements 30 used can be appropriately selected depending on the form of the light-emitting device to be obtained. In particular, it is preferable to mount more small light-emitting elements 30 at a higher density. This makes it possible to control the illumination range of the light emitted from the light-emitting device 1 with a larger number of divisions. Such a light-emitting device 1 can be used as a light source for a high-resolution lighting system. For example, the number of light-emitting elements 30 in the light-emitting device 1 can be between 1,000 and 100,000.

[0037] The light-emitting element 30 is, for example, a light-emitting diode. The light-emitting element 30 includes a semiconductor structure. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer sandwiched between the n-side semiconductor layer and the p-side semiconductor layer. The active layer may be a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The active layer is configured to emit, for example, visible light or ultraviolet light.

[0038] A semiconductor structure may include multiple light-emitting sections, each containing an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. When a semiconductor structure includes multiple light-emitting sections, each light-emitting section may include well layers with different emission peak wavelengths, or well layers with the same emission peak wavelength. Note that "same emission peak wavelength" includes variations of a few nanometers. The combination of emission peak wavelengths of the multiple light-emitting sections can be selected as appropriate. For example, when a semiconductor structure includes two light-emitting sections, possible combinations of light emitted by each section include blue light and blue light, green light and green light, ultraviolet light and ultraviolet light, blue light and green light, blue light and ultraviolet light, or green light and ultraviolet light. For example, when a semiconductor structure includes three light-emitting sections, possible combinations of light emitted by each section include blue light, green light, and red light. Each light-emitting section may include one or more well layers with an emission peak wavelength different from the other well layers.

[0039] As the light-emitting element 30, for example, a light-emitting element capable of emitting blue light (light with a wavelength of 430 to 490 nm) can be used. However, the emission color of the light-emitting element 30 can be selected at any wavelength depending on the application. For example, as a light-emitting element capable of emitting blue light (light with a wavelength of 430 to 490 nm) and green light (light with a wavelength of 495 to 565 nm), nitride semiconductors (In x Al y Ga 1-x-y Devices using materials such as N(0≦x, 0≦y, x+y≦1) and GaP can be used. In addition to nitride-based semiconductor devices, GaAlAs, AlInGaP, etc. can also be used as light-emitting elements capable of emitting red light (light with a wavelength of 610-700 nm).

[0040] The light-emitting element 30 is bonded to the wiring placed in the element mounting area 10r of the substrate 10 by a conductive bonding member. When the light-emitting element 30 is flip-chip mounted on the substrate 10, bumps made of metallic materials such as Au, Ag, Cu, and Al can be used as bonding members. Alternatively, solder such as an AuSn alloy or Sn-based lead-free solder may be used as bonding members. Furthermore, a conductive adhesive containing conductive particles such as metal in a resin can also be used as a bonding member. Plating may be used to bond the light-emitting element 30 to the substrate 10. Examples of plating materials include Cu and Au. In addition, the electrodes 35 of the light-emitting element 30 and the wiring of the substrate 10 may be in direct contact without the use of a bonding member.

[0041] (Light-blocking part) The light-shielding portion 40 is preferably made of a soft resin with relatively low elasticity and excellent shape conformability. Suitable materials for the light-shielding portion 40 include resin materials with good transmittance and insulation properties, such as thermosetting resins like epoxy resin and silicone resin. Furthermore, the light-shielding portion 40 is preferably made of a resin containing a light-reflective filler. Suitable light-reflective fillers include titanium oxide, aluminum oxide, zinc oxide, barium carbonate, barium sulfate, boron nitride, aluminum nitride, and glass. The light-shielding portion 40 may also contain a light-absorbing member. Suitable light-absorbing members include pigments, carbon black, titanium black, and graphite.

[0042] (Resin part) The resin portion 50, like the light-shielding portion 40, preferably uses a soft resin with relatively low elasticity and excellent shape conformability. The same material used for the light-shielding portion 40 described above can be used for the resin portion 50. Furthermore, the resin portion 50 preferably uses a resin containing a light-reflective filler. The same filler used for the light-shielding portion 40 described above can be used for the light-reflective filler. The resin portion 50 may also contain the light-absorbing member described above.

[0043] (Light-transmitting part) The first region 61 of the light-transmitting part 60 includes a resin and a wavelength conversion member. Examples of the resin include known resins having light-transmitting properties such as silicone resins and epoxy resins. Among them, a silicone resin (specifically, a light-transmitting resin such as phenyl silicone resin or dimethyl silicone resin) with excellent reliability can be preferably used. Examples of the wavelength conversion member include a phosphor.

[0044] Examples of the phosphor include yttrium aluminum garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet-based phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet-based phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu) and other oxynitride-based phosphors, LSN-based phosphors (e.g., (La,Y)3Si6N 11 :Ce), BSESN-based phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA-based phosphors (e.g., SrLiAl3N4:Eu), CASN-based phosphors (e.g., CaAlSiN3:Eu) or SCASN-based phosphors (e.g., (Sr,Ca)AlSiN3:Eu) and other nitride-based phosphors, KSF-based phosphors (e.g., K2SiF6:Mn), KSAF-based phosphors (e.g., K2(Si 1-x Al x )F 6-x:Mn where x satisfies 0 < x < 1), or fluoride-based phosphors such as MGF-based phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used.

[0045] When the light-emitting element 30 can emit blue light, the first region 61 can contain, for example, a phosphor that can be excited by blue light and emit yellow light. In this case, examples of the phosphor contained in the first region 61 include yttrium aluminum garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce). According to such a configuration, white light can be obtained by mixing the blue light that has passed through the first region 61 and the yellow light emitted by the phosphor contained in the first region 61.

[0046] The second region 62 of the light-transmitting portion 60 can function as an adhesive layer that adheres the light-transmitting portion 60 and the light-emitting element 30. The second region 62 can use at least one adhesive selected from the group consisting of, for example, silicone-based adhesives, epoxy-based adhesives, and acrylic-based adhesives. In order to improve the transmittance of light incident on the light-transmitting portion 60, the second region 62 is preferably a thin film of about 1 μm.

[0047] (Wire) As the wire 70, metals such as Au, Ag, Cu, Pt, Al, and / or alloys containing at least these metals can be used. In particular, it is preferable to use Au, which has excellent thermal resistance. The diameter of the wire 70 can be, for example, 15 μm to 50 μm. The wire 70 can be arranged to straddle the long side of the substrate 10, which is roughly rectangular when viewed from above, for example, so as to be roughly perpendicular to the long side. In addition, among the multiple wires 70 arranged in a row along the long side of the substrate 10, the wire 70 located in the center of the row can be arranged so as to be roughly perpendicular to the long side of the substrate 10 when viewed from above, as described above, and the wires 70 located at the ends of the row can be arranged diagonally to the long side of the substrate 10 when viewed from above. The spacing between the aligned wires 70 can be 20 μm to 100 μm.

[0048] (Covering material) The covering member 80 is a light-shielding member that covers the wire 70 outside the element mounting area 10r. For example, the covering member 80 is arranged in a frame shape when viewed from above, covering the wire 70 and surrounding the element mounting area 10r.

[0049] The covering member 80 is positioned at a distance from the light-emitting element 30 when viewed from above. Preferably, the height of the covering member 80 (i.e., the distance from the top surface 20a of the package substrate 20 to the top surface of the covering member 80) is positioned to be highest directly above the top of the wire 70. In other words, preferably, the top of the covering member 80 is positioned to overlap with the top of the wire 70.

[0050] Examples of the covering member 80 include a resin containing a light-shielding filler. Examples of the base resin include silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, acrylic resin, etc. Examples of the light-shielding filler include a light-reflecting member or a light-absorbing member that can be contained in the light-shielding portion 40 described above. Examples of the appearance color of the covering member 80 include white with excellent light reflectivity, black with excellent light absorption, and gray with both light reflectivity and light absorption. The covering member 80 may also consist of multiple laminated resin layers. In particular, considering the degradation of the resin due to light absorption, it is preferable that the covering member 80 uses a light-reflecting white resin at least on its outermost surface.

[0051] The light-emitting device 1 having the above configuration can be used, for example, as a light source for a vehicle's headlights. For instance, it can be used as a light source that can select the illumination area and emit light, such as in headlights equipped with an ADB (Adaptive Driving Beam) function.

[0052] [Manufacturing method for light-emitting device 1] The following describes each manufacturing step of the method for manufacturing the light-emitting device according to the embodiment, with reference to the drawings.

[0053] Figures 6A to 6C and 6E to 6I are cross-sectional views illustrating the manufacturing process of the light-emitting device according to this embodiment. Figure 6D is a top view illustrating the manufacturing process of the light-emitting device according to this embodiment. For convenience, Figures 6E to 6I show enlarged portions of the cross-sections of Figures 6A to 6C.

[0054] (Steps to prepare the first structure) First, as shown in Figure 6A, a first structure 100 is prepared, having a first support substrate 110, a peeling portion 120, and a light-transmitting portion 60 in that order. In the illustrated example, the light-transmitting portion 60 has a first region 61 including a wavelength conversion member and a second region 62 not including a wavelength conversion member, which are placed on the peeling portion 120. If wavelength conversion is not required, the light-transmitting portion 60 does not need to have the first region 61 including the wavelength conversion member.

[0055] Specifically, first, a first support substrate 110 is prepared, and a release portion 120 is formed on the upper surface of the first support substrate 110. The upper surface of the first support substrate 110 is flat. Preferably, the release portion 120 is formed by spin coating. Since the release portion 120 formed by spin coating on the flat upper surface of the first support substrate 110 has a flat upper surface, the adhesion with the light-transmitting portion 60 can be improved. Also, when the upper surface of the release portion 120 is flat, the upper surfaces of the first region 61 and the second region 62 formed thereon can be made flat surfaces. For example, a glass substrate can be used as the first support substrate 110. For example, a resin member containing a silicone resin or an acrylic resin as a base material can be used as the release portion 120.

[0056] Next, a resin containing a wavelength conversion member, which has been pre-processed into a sheet of a predetermined size to form the first region 61 of the light-transmitting portion 60, is prepared. Then, the resin containing the wavelength conversion member is placed on the upper surface of the release portion 120. The resin containing the wavelength conversion member may be fixed to the release portion 120 via a light-transmitting bonding member such as resin, or it may be fixed without a bonding member by utilizing the tackiness of the resin containing the wavelength conversion member. It is preferable to place the resin containing the wavelength conversion member on the upper surface of the release portion 120 in a vacuum. This allows the resin containing the wavelength conversion member to be uniformly distributed on the upper surface of the release portion 120. Instead of placing a sheet-shaped member on the release portion 120, the resin containing the wavelength conversion member may be applied to the release portion 120 by spraying or the like. Alternatively, it may be formed by injection molding using a mold, transfer molding, compression molding, etc.

[0057] Next, a silicone resin or the like that does not contain a wavelength conversion member is prepared to form the second region 62 of the light-transmitting portion 60, and placed on the first region 61. For example, by diluting the silicone resin and applying it to the first region 61 using spin coating, a thin film of about 1 μm can be formed as the second region 62.

[0058] In the description of the manufacturing method, "preparing" the components includes not only manufacturing the components but also acquiring them through purchase, acquisition, etc.

[0059] (Preparation of the second structure) Next, as shown in Figure 6B, a second structure 200 is prepared, which includes a second support substrate 210 and a plurality of light-emitting elements 30 temporarily fixed to the second support substrate 210. The timing of the step of preparing the second structure 200 may be before, after, or simultaneously with the step of preparing the first structure 100.

[0060] Specifically, first, multiple light-emitting elements 30 are prepared. Each of the multiple light-emitting elements 30 has an upper surface and a lower surface, and has multiple electrodes 35 on the lower surface side. In Figure 6B, the light-emitting elements 30 are shown with the lower surface having the electrodes 35 facing upwards. The light-emitting elements 30 can be prepared by going through some or all of a series of steps, such as forming a semiconductor laminate and forming electrodes. Next, a temporary fixing layer 220 is formed on the second support substrate 210, and the lower surfaces of the multiple light-emitting elements 30 are temporarily fixed to the second support substrate 210 via the temporary fixing layer 220.

[0061] The material of the second support substrate 210 is not particularly limited as long as it has a transmittance of a certain level or higher to the laser light described later, but for example, sapphire, glass, silicon, etc. can be used. The temporary fixing layer 220 is not particularly limited as long as it is made of a material that disappears when irradiated with the laser light described later. As the temporary fixing layer 220, for example, a material mainly composed of epoxy resin, acrylic resin, or polyimide resin can be used, and for example, a mixture of fluorene monomer and propylene glycol monomethyl ether acetate (PGMAE) can be used. As the laser light, for example, light having an emission peak wavelength in the wavelength range of 250 nm to 400 nm can be used.

[0062] (Process of transferring multiple light-emitting elements to the light-transmitting section) Next, as shown in Figure 6C, the light-transmitting portion 60 provided on the first support substrate 110 of the first structure 100 and the upper surfaces of the multiple light-emitting elements 30 temporarily fixed to the second support substrate 210 of the second structure 200 are positioned facing each other. Then, by irradiating the temporary fixing layer 220 of the second structure 200 with laser light La via the second support substrate 210, the multiple light-emitting elements 30 are transferred onto the second region 62 of the light-transmitting portion 60. By providing adhesion to the second region 62, the misalignment of the transferred light-emitting elements 30 can be reduced.

[0063] The laser light La is light that can penetrate the second support substrate 210 and remove the temporary fixing layer 220. For example, the laser light La may irradiate only one temporary fixing layer 220 in a single irradiation. The laser light La may irradiate two or more temporary fixing layers 220 in a single irradiation, or it may irradiate all of the temporary fixing layers 220. In addition, the laser light La may irradiate each temporary fixing layer 220 two or more times.

[0064] Figure 6D is a schematic top view showing the first structure 100 after the light-emitting element 30 has been transferred. As shown in Figure 6, the first structure 100 after the light-emitting element 30 has been transferred becomes a wafer having, for example, multiple regions 100R that are separated into individual pieces and joined to the substrate 10. The regions 100R are arranged vertically and horizontally with predetermined intervals between them.

[0065] (Process for forming the light-shielding portion) Next, as shown in Figure 6E, a light-shielding portion 40 containing a filler is formed between the multiple light-emitting elements 30. Specifically, for example, a resin diluted with a solvent containing a filler is filled between the multiple light-emitting elements 30 by spin coating, and after filling, at least a portion of the solvent is removed to form the light-shielding portion 40. For example, a resin containing a filler diluted to a dilution of 2 to 30 times can be used. By using spin coating, the light-shielding portion 40 can be uniformly filled between the multiple light-emitting elements 30. Also, by diluting the resin, the diluted solution evaporates when the light-shielding portion 40 is formed, and the upper surface of the resin decreases, so that the filler can be filled between the light-emitting elements 30 at a high concentration. The filler can be, for example, mixed in the diluted resin to be greater than 0 and 80% by weight or less, but it is preferable to mix it to be about 50% to 70% by weight. This makes it possible to increase the concentration of the filler while ensuring filling between the light-emitting elements 30.

[0066] In the example shown in Figure 6E, the light-shielding portion 40 is formed to cover the electrodes 35 of the multiple light-emitting elements 30, but the light-shielding portion 40 may also be formed to expose the upper surfaces of the electrodes 35. If the light-shielding portion 40 is formed to cover the electrodes 35, as shown in Figure 6F, the process of removing at least a portion of the light-shielding portion 40 to expose the electrodes 35 of the multiple light-emitting elements 30 is further carried out. The removal of the light-shielding portion 40 may be carried out so that at least the upper surfaces of the electrodes 35 are exposed, and further so that part or all of the sides of the electrodes 35 are exposed. By removing at least a portion of the light-shielding portion 40, the shape of the light-shielding portion 40 located between the light-emitting elements 30 becomes, for example, fillet-shaped.

[0067] In the step of exposing the electrode 35, it is preferable to remove the light-shielding portion 40 by dry ice cleaning. Dry ice cleaning can be achieved by spraying fine particles of dry ice together with compressed air onto the target surface. By using dry ice cleaning, the damage to the light-emitting element 30 when removing the light-shielding portion 40 can be reduced. In addition, when using dry ice cleaning, the fine particles of dry ice vaporize and dissipate into the atmosphere, so no abrasive material remains after use, and the risk of contamination of the target surface can be reduced.

[0068] (The process of separating the pieces) Next, the first structure 100, which has the light-emitting element 30 and the light-shielding portion 40 as shown in Figure 6F, is divided into individual pieces according to the region 100R shown in Figure 6D. This division can be performed, for example, by dicing.

[0069] (A process of joining the electrodes of multiple light-emitting elements to the substrate) Next, as shown in Figure 6G, the electrodes 35 of the multiple light-emitting elements 30 are joined to the substrate 10. Specifically, first, a wafer is prepared having multiple regions that will be separated into individual pieces to form the substrate 10 shown in Figure 2. As shown in Figure 2, each region that will become the substrate 10 has an element mounting region 10r and a first terminal 11 located outside the element mounting region 10r on the upper surface 10a side. A wafer having multiple regions that will become the substrate 10 can be prepared, for example, by preparing a flat support member made of silicon or the like, and forming the wiring and the first terminal 11 by plating, sputtering, vapor deposition, or the like. Next, in each region that will become the substrate 10, a first structure 100 having a light-emitting element 30 and a light-shielding portion 40 is placed on the element mounting region 10r, and the electrodes 35 of the light-emitting elements 30 are joined to the wiring of the substrate 10. The wiring between the electrodes 35 of the light-emitting elements 30 and the substrate 10 can be performed, for example, by Au-Au thermocompression bonding or Au-Sn eutectic bonding. Subsequently, multiple regions that will become the substrate 10 are separated into individual pieces.

[0070] (Step of peeling the first support substrate from the first structure) Next, as shown in Figure 6H, the first support substrate 110 is peeled off from the first structure 100 shown in Figure 6G. For example, the peel portion 120 of the first structure 100 shown in Figure 6G is immersed in a solution and the peel portion 120 is dissolved to peel off the first support substrate 110. Compared to the method of mechanically peeling off the first support substrate 110 by applying an upward force, this method reduces the force applied to the joint between the electrodes 35 of the light-emitting element 30 and the wiring of the substrate 10, thus reducing the load on the joint.

[0071] (Process of positioning the resin part) Next, as shown in Figure 6I, a resin portion 50 containing a filler is placed in at least a portion of the space between the multiple light-emitting elements 30 and the substrate 10. Specifically, the resin portion 50 is placed such that the concentration of the filler contained in the resin portion 50 is lower than the concentration of the filler contained in the light-shielding portion 40. One method for placing the resin portion 50 is to pot the material that will become the resin portion 50 on the outer periphery of the element mounting area 10r of the substrate 10, and fill the space between the multiple light-emitting elements 30 and the substrate 10 by capillary action. After filling, voids can be removed by curing the resin portion 50 in a vacuum oven.

[0072] Thus, in the manufacturing method of the light-emitting device 1, most of the necessary components are formed on the first support substrate 110, and then the light-emitting element 30 and the substrate 10 are bonded together. This makes it possible to reduce the number of steps and realize a lower cost for the light-emitting device 1. In particular, since the manufacturing method of the light-emitting device 1 does not involve a photolithography step, there is no step of forming a resist and removing the resist after plating or the like. This makes it possible to significantly reduce the number of steps.

[0073] Furthermore, in the manufacturing method of the light-emitting device 1, the upper surface of the light-transmitting portion 60 can be made flat by forming the light-transmitting portion 60 on the upper surface of the flat first support substrate 110 via a peeling portion 120. For example, if the light-transmitting portion 60 has a first region 61 including a wavelength conversion member, the upper surface of the first region 61 can be made flat, making it possible to extract uniform light from the light-emitting device 1 and reduce color unevenness.

[0074] Similarly, since the upper surface of the second region 62 can be made flat, by forming a light-shielding portion 40 between the multiple light-emitting elements 30 arranged on the upper surface of the second region 62, the surfaces of the light-emitting elements 30 and the light-shielding portion 40 that are in contact with the upper surface of the second region 62 can be made flush. As a result, the entire side surface of the light-emitting element 30 is covered by the light-shielding portion 40, so that light leakage from the side surface of the light-emitting element 30 can be reduced.

[0075] The manufacturing process of the light-emitting device according to this embodiment may further include the following steps.

[0076] (The process of placing the substrate onto the package substrate) A package substrate 20 is prepared, having a substrate mounting area 20r on which the substrate 10 is placed, and a second terminal 22 located outside the substrate mounting area 20r on the upper surface 20a side. The package substrate 20 can be prepared, for example, by forming wiring made of Cu or the like and the second terminal 22 on a flat support member made of metal, ceramics, etc., using plating, sputtering, vapor deposition, etc. Next, the substrate 10 on which the light-emitting element 30 is placed is placed on the substrate mounting area 20r of the package substrate 20. The substrate 10 and the package substrate 20 can be joined via a bonding member, for example, a sintered body containing Ag or a resin material. This step can be performed, for example, after the step of placing the resin part.

[0077] (The process of connecting with wires) The first terminal 11 of the substrate 10 and the second terminal 22 of the package substrate 20 are connected by a wire 70. For example, the wire 70 is first connected to the first terminal 11 of the substrate 10, and then to the second terminal 22 of the package substrate 20. By connecting the wire 70 in this order, the top of the wire 70 can be positioned closer to the first terminal 11. This allows the wire 70 to be positioned along the step difference between the substrate 10 and the package substrate 20. Therefore, in the process of arranging the covering member 80 described later, the amount of resin placed below the wire 70 is reduced, and the risk of wire 70 breakage due to thermal expansion of the covering member 80 can be suppressed. This process can be performed, for example, between the process of preparing the substrate and the light-emitting element group and the process of providing the holding part, and after the process of placing the substrate on the package substrate.

[0078] (Step of arranging the covering material) A covering member 80 is placed on the outer periphery of the upper surface 10a of the substrate 10 and the outer periphery of the upper surface 20a of the package substrate 20 to cover the first terminal 11, the second terminal 22, and the wire 70. The covering member 80 can be placed, for example, by supplying uncured resin to a predetermined position using a dispenser and curing it. This step can be performed, for example, after the step of connecting with wires. A frame for defining the area where the covering member is placed may be placed on the upper surface 10a of the substrate 10 and the upper surface 20a of the package substrate 20.

[0079] <Variation> Figure 7 is a partially enlarged view of the light-emitting element and its vicinity in the light-emitting device according to Modification 1. As shown in Figure 7, the upper surface of each of the multiple light-emitting elements 30 may be rough. In this case, as shown in Figure 7, the shape of the surface of the second region 62 facing each of the rough surfaces of the multiple light-emitting elements 30 follows the shape of the rough surface. That is, there is no air layer between the opposing surfaces of the light-emitting elements 30 and the second region 62.

[0080] The upper surface of the light-emitting element 30 can be made rough by etching, for example. Etching can be performed, for example, before temporarily fixing the light-emitting element 30 to the second support substrate 210. Alternatively, by diluting the resin and applying it to the first region 61 using spin coating or the like, the shape of the surface of the second region 62 can be made to conform to the shape of the rough surface.

[0081] By making the upper surface of the light-emitting element 30 rough, the emission area from the light-emitting element 30 is increased, thereby improving the light extraction efficiency and the brightness of the light-emitting device 1. In addition, the contact area between the upper surface of the light-emitting element 30 and the lower surface of the second region 62 can be increased, thereby improving the adhesion between the light-emitting element 30 and the second region 62. When the upper surface of the light-emitting element 30 is rough, the surface roughness can be, for example, 0.1 μm to 3 μm in terms of arithmetic mean height Ra.

[0082] Preferably, the refractive index of the second region 62 is equal to the refractive index of the first region 61. If the upper surface of the light-emitting element 30 is rough, for example, if the first region 61 is provided by a sheet-shaped resin without providing the second region 62, an air layer may be formed between the upper surface of the light-emitting element 30 and the first region 61. Since the refractive index of the first region 61 is about 1.4 and the refractive index of the air layer is about 1, the light emitted from the light-emitting element 30 will have difficulty passing through the air layer. Therefore, by providing a second region 62 with the same refractive index as the first region 61 between the upper surface of the light-emitting element 30 and the first region 61, the air layer is eliminated, making it easier for the light emitted from the light-emitting element 30 to reach the first region 61. This increases the light extraction efficiency and improves the brightness of the light-emitting device 1.

[0083] Figure 8 is a partially enlarged view of the light-emitting element and its vicinity in a light-emitting device according to modified example 2. As shown in Figure 8, the resin part 50 is provided between a plurality of light-emitting elements 30, and does not necessarily have to be provided between the electrodes 35 of each light-emitting element 30. In this case, a gap S is provided between the electrodes 35 of each light-emitting element 30. By devising the shape of the electrodes 35, the gap S can be provided by preventing the uncured resin that will become the resin part 50 from flowing between the electrodes 35 of each light-emitting element 30 in the process shown in Figure 6I.

[0084] If there is no air gap S, the heat generated in the light-emitting element 30 is retained in the resin part 50 located between the electrodes 35 of the light-emitting element 30, resulting in poor thermal conductivity. By providing an air gap S, the thermal conductivity is improved compared to when the resin part 50 is present, making it possible to efficiently dissipate the heat generated in the light-emitting element 30 towards the substrate 10.

[0085] Although preferred embodiments have been described in detail above, the invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

[0086] In addition to the embodiments described above, the following further notes are disclosed. (Note 1) A step of preparing a first structure having a first support substrate, a peeling portion, and a light-transmitting portion in that order, A step of preparing a second structure having a second support substrate and a plurality of light-emitting elements temporarily fixed to the second support substrate, wherein each of the plurality of light-emitting elements has an upper surface and a lower surface, has a plurality of electrodes on the lower surface side and is temporarily fixed to the second support substrate via a temporary fixing layer on the lower surface side, The process involves arranging the light-transmitting portion provided on the first structure and the upper surfaces of the plurality of light-emitting elements temporarily fixed to the second support substrate facing each other, and transferring the plurality of light-emitting elements to the light-transmitting portion by irradiating the temporary fixing layer with laser light, A step of forming a light-shielding portion containing a filler between the plurality of light-emitting elements, A step of joining the electrodes of the plurality of light-emitting elements to the substrate, A step of arranging a resin portion containing a filler in at least a portion between the plurality of light-emitting elements and the substrate, wherein the concentration of the filler contained in the resin portion is lower than the concentration of the filler contained in the light-shielding portion, A step of peeling the first support substrate from the first structure, A method for manufacturing a light-emitting device, comprising the above. (Note 2) The method for manufacturing a light-emitting device according to Appendix 1, wherein in the step of forming the light-shielding portion, a resin diluted with a solvent containing the filler is filled between the plurality of light-emitting elements by spin coating, and after filling, at least a portion of the solvent is removed to form the light-shielding portion. (Note 3) The step of forming the light-shielding portion involves forming the light-shielding portion so as to cover the electrodes of the plurality of light-emitting elements. The process further includes removing at least a portion of the light-shielding portion to expose the electrodes of the plurality of light-emitting elements. A method for manufacturing a light-emitting device according to Appendix 1 or 2, wherein in the step of exposing the electrode, the light-shielding portion is removed by dry ice cleaning. (Note 4) A method for manufacturing a light-emitting device according to any one of appendices 1 to 3, wherein the upper surface of each of the plurality of light-emitting elements is a rough surface. (Note 5) The light-transmitting portion has a first region including a wavelength conversion member and a second region not including a wavelength conversion member, which are arranged on the peeling portion. In the transfer step, the plurality of light-emitting elements are transferred onto the second region. The method for manufacturing a light-emitting device as described in Appendix 4, wherein the refractive index of the second region is equal to the refractive index of the first region. (Note 6) The method for manufacturing a light-emitting device according to any one of appendices 1 to 5, wherein the resin portion is provided between the plurality of light-emitting elements and not between the electrodes of each of the light-emitting elements. (Note 7) A method for manufacturing a light-emitting device according to any one of appendices 1 to 6, wherein in the step of peeling off the first support substrate, the first support substrate is peeled off by immersing the peeling portion in a solution. (Note 8) circuit board and A plurality of light-emitting elements arranged on the substrate, A light-shielding portion is provided between the plurality of light-emitting elements and covers the side surface of each of the plurality of light-emitting elements, A resin portion provided between the plurality of light-emitting elements and the substrate, and between the light-shielding portion and the substrate, A light-transmitting portion covering the upper surface of the plurality of light-emitting elements, It has, The light-shielding portion and the resin portion contain a filler, and the concentration of the filler contained in the resin portion is lower than the concentration of the filler contained in the light-shielding portion. Light-emitting device. (Note 9) The light-transmitting portion includes a second region provided on the upper surface of each of the plurality of light-emitting elements, which does not include a wavelength conversion member, and a first region provided on the second region which includes a wavelength conversion member. The upper surface of each of the aforementioned plurality of light-emitting elements is rough, The light-emitting device according to Appendix 8, wherein the shape of the surface of the second region facing the rough surface of each of the plurality of light-emitting elements follows the shape of the rough surface. (Note 10) The light-emitting device according to Appendix 9, wherein the refractive index of the second region is equal to the refractive index of the first region. (Note 11) The light-emitting device according to any one of appendices 8 to 10, wherein the resin portion is provided between the plurality of light-emitting elements and not between the electrodes of each of the light-emitting elements. (Note 12) The light-shielding portion is provided in a fillet shape between the plurality of light-emitting elements, as described in any one of appendices 8 to 11 of the light-emitting device. [Explanation of Symbols]

[0087] 1. Light-emitting device 10 circuit boards 10a top surface 10r element mounting area 11 1st terminal 20 Package substrates 20a top surface 20r substrate mounting area 22 2nd terminal 30 light-emitting elements 35 electrodes 40 Light-shielding part 50 Resin part 60 Translucent part 61 1st area 62 Second area 70 wires 80 Covering member 100 1st structure 100R area 110 First support board 120 Peeled section 200 Second structure 210 Second support board 220 Temporary fixing layer

Claims

1. A step of preparing a first structure having a first support substrate, a peeling portion, and a light-transmitting portion in that order, A step of preparing a second structure having a second support substrate and a plurality of light-emitting elements temporarily fixed to the second support substrate, wherein each of the plurality of light-emitting elements has an upper surface and a lower surface, has a plurality of electrodes on the lower surface side and is temporarily fixed to the second support substrate via a temporary fixing layer on the lower surface side, The process involves arranging the light-transmitting portion provided on the first structure and the upper surfaces of the plurality of light-emitting elements temporarily fixed to the second support substrate facing each other, and transferring the plurality of light-emitting elements to the light-transmitting portion by irradiating the temporary fixing layer with laser light, A step of forming a light-shielding portion containing a filler between the plurality of light-emitting elements, A step of joining the electrodes of the plurality of light-emitting elements to the substrate, A step of arranging a resin portion containing a filler in at least a portion between the plurality of light-emitting elements and the substrate, wherein the concentration of the filler contained in the resin portion is lower than the concentration of the filler contained in the light-shielding portion, A step of peeling the first support substrate from the first structure, A method for manufacturing a light-emitting device, comprising the above.

2. The method for manufacturing a light-emitting device according to claim 1, wherein in the step of forming the light-shielding portion, a resin diluted with a solvent containing the filler is filled between the plurality of light-emitting elements by spin coating, and after filling, at least a portion of the solvent is removed to form the light-shielding portion.

3. The step of forming the light-shielding portion involves forming the light-shielding portion so as to cover the electrodes of the plurality of light-emitting elements. The process further includes removing at least a portion of the light-shielding portion to expose the electrodes of the plurality of light-emitting elements. The method for manufacturing a light-emitting device according to claim 1, wherein in the step of exposing the electrode, the light-shielding portion is removed by dry ice cleaning.

4. A method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein the upper surface of each of the plurality of light-emitting elements is rough.

5. The light-transmitting portion has a first region including a wavelength conversion member and a second region not including a wavelength conversion member, which are arranged on the peeling portion. In the transfer step, the plurality of light-emitting elements are transferred onto the second region. The method for manufacturing a light-emitting device according to claim 4, wherein the refractive index of the second region is equal to the refractive index of the first region.

6. The method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein the resin portion is provided between the plurality of light-emitting elements and not between the electrodes of each of the light-emitting elements.

7. A method for manufacturing a light-emitting device according to any one of claims 1 to 3, wherein in the step of peeling off the first support substrate, the first support substrate is peeled off by immersing the peeling portion in a solution.

8. circuit board and A plurality of light-emitting elements arranged on the substrate, A light-shielding portion is provided between the plurality of light-emitting elements and covers the side surface of each of the plurality of light-emitting elements, A resin portion provided between the plurality of light-emitting elements and the substrate, and between the light-shielding portion and the substrate, A light-transmitting portion covering the upper surface of the plurality of light-emitting elements, It has, The light-shielding portion and the resin portion contain a filler, and the concentration of the filler contained in the resin portion is lower than the concentration of the filler contained in the light-shielding portion. Light-emitting device.

9. The light-transmitting portion includes a second region provided on the upper surface of each of the plurality of light-emitting elements, which does not include a wavelength conversion member, and a first region provided on the second region which includes a wavelength conversion member. The upper surface of each of the aforementioned plurality of light-emitting elements is rough, The light-emitting device according to claim 8, wherein the shape of the surface of the second region facing the rough surface of each of the plurality of light-emitting elements follows the shape of the rough surface.

10. The light-emitting device according to claim 9, wherein the refractive index of the second region is equal to the refractive index of the first region.

11. The light-emitting device according to any one of claims 8 to 10, wherein the resin portion is provided between the plurality of light-emitting elements and not between the electrodes of each of the light-emitting elements.

12. The light-shielding portion is provided in a fillet shape between the plurality of light-emitting elements, as described in any one of claims 8 to 10.

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