Liquid crystal display device

Abstract

To provide a display device with improved viewing angle characteristics. Display with suppressed color mixing between adjacent pixels. We provide the device. [Solution] The display device comprises a first colored layer and a second colored layer provided at a distance from each other, and these The structure has a structure located between the first colored layer and Alternatively, the configuration may include a portion located on the display surface side that is higher than the height of the lower surface of the second colored layer.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the technical field is semiconductor devices, display devices, light-emitting devices, energy storage devices, and memory devices. Electronic equipment, lighting equipment, input devices, input / output devices, methods for driving them, or methods for manufacturing them. Law can be cited as one example.

[0003] In this specification, a semiconductor device is defined as a device that can function by utilizing semiconductor properties. This refers to all types of devices. Transistors, semiconductor circuits, computing units, and memory devices are all types of semiconductor devices. It appears that... Also, imaging devices, electro-optical devices, power generation devices (thin-film solar cells, organic thin-film solar cells) Electronic devices may include semiconductor equipment (including, etc.). [Background technology]

[0004] Organic EL (Electro-Luminescence) elements and liquid crystal elements are used. A display device is known. In addition, there is also the light-emitting diode (LED). Light-emitting devices equipped with light-emitting elements such as Emitting Diodes, electrophoretic systems, etc. Electronic paper, which displays more information, can also be cited as an example of a display device.

[0005] The basic structure of an organic EL element involves sandwiching a layer containing a light-emitting organic compound between a pair of electrodes. This element is constructed by applying a voltage to it, thereby obtaining light emission from a light-emitting organic compound. This is possible. Display devices to which such organic EL elements are applied are thin, lightweight, and high-performance. This enables the creation of a reliable and low-power display device.

[0006] Patent Document 1 discloses a flexible light-emitting device to which organic EL elements are applied. . [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the project] [Problems that the invention aims to solve]

[0008] One of the indicators of a display device's performance is its viewing angle characteristics. If the viewing angle characteristics are poor, When viewing the display surface of a device from an oblique angle, a decrease in brightness or a change in color may be visible. Therefore, in applications requiring a wide viewing angle, improvements in the viewing angle characteristics of display devices are necessary. ru.

[0009] Furthermore, there is a demand for higher resolution display devices, and therefore, to make display devices more high-definition... This is what is required. Compared to large equipment such as home television systems, for example, portable In relatively small portable information terminal devices such as telephones, smartphones, and tablet devices, resolution To improve the quality, the level of detail needs to be increased.

[0010] One aspect of the present invention aims to provide a display device with improved viewing angle characteristics. Alternatively, one of the objectives is to provide a display device in which color mixing between adjacent pixels is suppressed. One of its objectives is to provide a display device with high resolution. Alternatively, a display device with a thin profile. One of the objectives is to provide a suitable device. Alternatively, one of the objectives is to provide a display device that is easy to manufacture. One of the objectives is to provide a display device with reduced power consumption. Alternatively, one of the objectives is to provide a highly reliable display device.

[0011] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention It is not necessary to solve all of these problems. Furthermore, any other problems not mentioned above are clearly defined. It is possible to extract this information from the details provided in the documents. [Means for solving the problem]

[0012] One aspect of the present invention relates to a display device having a first colored layer, a second colored layer, and a structure. Yes. The first colored layer and the second colored layer are spaced apart. The structure is the first colored layer It is located between the first colored layer and the second colored layer, and is on the underside of the first colored layer or the underside of the second colored layer It has a portion that is located on the display surface side, which is higher than the height of the display surface.

[0013] Furthermore, it is preferable that the thickness of the first colored layer and the thickness of the second colored layer are different. It's nice.

[0014] Furthermore, it has a first electrode that overlaps with the first colored layer, and between the first electrode and the first colored layer Preferably, a second electrode is present. In this case, light emission is present between the first electrode and the second electrode. The material has a layer containing a colored substance, and the distance between the second electrode and the first colored layer is 0 μm to 20 μm. It is preferable that the region be less than or equal to m.

[0015] Furthermore, it has an insulating layer covering the end of the first electrode, and the structure is formed on the insulating layer. It is preferable that the second electrode has a portion that covers the upper surface of the structure. It seems so.

[0016] Furthermore, the layer containing the luminescent material has a portion located between the structure and the second electrode. It is preferable that the angle between the side and bottom surfaces of the structure in its cross-section is 25 degrees. It is preferable that the portion has a temperature of 155 degrees or less.

[0017] Furthermore, the layer containing the above-mentioned luminescent material is located between the structure and the second electrode, and the first It is preferable to have a portion that is thinner than the portion that overlaps with the electrode.

[0018] Furthermore, the display device according to one aspect of the present invention has a third electrode that overlaps with the first coloring layer, and the third A configuration can also be provided in which a liquid crystal is present between the electrode and the first colored layer.

[0019] Furthermore, it is preferable to have a fourth electrode having a slit between the third electrode and the liquid crystal. i. At this time, the distance between the fourth electrode and the first colored layer is between 1 μm and 20 μm. It is preferable that it has a region.

[0020] Alternatively, the liquid crystal has a fifth electrode between the third electrode and the first colored layer, and the third electrode It is preferable that it is located between the third electrode and the first colored layer. It is preferable that the distance between them is in a region of 1 μm to 20 μm. [Effects of the Invention]

[0021] According to one aspect of the present invention, a display device with improved viewing angle characteristics can be provided. Or, adjacent It is possible to provide a display device in which color mixing between pixels is suppressed, or to provide a display device with high resolution. Yes, it is possible. Or, a thin display device can be provided. Or, an easy-to-manufacture display device can be provided. It can provide a display device with reduced power consumption. Or, it can provide a highly reliable display. We can provide a display device.

[0022] Furthermore, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from descriptions in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0023] [Figure 1] An example of the configuration of a display device according to an embodiment. [Figure 2] An example of the configuration of a display device according to an embodiment. [Figure 3] An example of the configuration of a display device according to an embodiment. [Figure 4] An example of the configuration of a display device according to an embodiment. [Figure 5] An example of the configuration of a display device according to an embodiment. [Figure 6] An example of the configuration of a display device according to an embodiment. [Figure 7] An example of the configuration of a display device according to an embodiment. [Figure 8] An example of the configuration of a display device according to an embodiment. [Figure 9] An example of the configuration of a display device according to an embodiment. [Figure 10] An example of the configuration of a display device according to an embodiment. [Figure 11] An example of the configuration of an input device according to an embodiment. [Figure 12] An example of the configuration of an input device according to an embodiment. [Figure 13] An example of the configuration of a display device according to an embodiment. [Figure 14] An example of the configuration of a display device according to an embodiment. [Figure 15] An example of the configuration of a display device according to an embodiment. [Figure 16] An example of the configuration of a display device according to an embodiment. [Figure 17] An example of the configuration of a display device according to an embodiment. [Figure 18] An example of the configuration of a display device according to an embodiment. [Figure 19] A diagram illustrating an example of a driving method for an input device according to an embodiment. [Figure 20] An example of transistor configuration according to an embodiment. [Figure 21] An example of transistor configuration according to an embodiment. [Figure 22] An example of transistor configuration according to an embodiment. [Figure 23] A diagram illustrating a display module according to an embodiment. [Figure 24] A diagram illustrating an electronic device according to an embodiment. [Figure 25] A diagram illustrating an electronic device according to an embodiment. [Figure 26] A diagram illustrating an electronic device according to an embodiment. [Figure 27] A diagram illustrating an electronic device according to an embodiment. [Figure 28] A diagram illustrating an electronic device according to an embodiment. [Figure 29] Cross-sectional view of an example. [Figure 30] A diagram illustrating the measurement results of the XRD spectrum of a sample. [Figure 31] A diagram illustrating the TEM image and electron diffraction pattern of the sample. [Figure 32] A diagram illustrating the EDX mapping of a sample. [Modes for carrying out the invention]

[0024] Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. Without departing from the spirit and scope of the present invention, its form and details may be modified in various ways. Those skilled in the art will readily understand what is possible. Therefore, the present invention is as shown in the following embodiments. It should not be interpreted as being limited to the contents described herein.

[0025] In the configuration of the invention described below, the same part or part having a similar function is The same reference numerals are used consistently across different drawings, and explanations of their repetition are omitted. When referring to the function of [this], the hatch pattern is the same, and sometimes no specific symbol is assigned.

[0026] In each figure described herein, the size, layer thickness, or area of ​​each component is as follows: It may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale. stomach.

[0027] In this specification, ordinal numbers such as "the first," "the second," etc., are used to avoid confusion of constituent elements. This is added for the purpose of providing a numerical limit, and is not intended to limit the number of items.

[0028] (Embodiment 1) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention.

[0029] A display device according to one aspect of the present invention has a plurality of pixels. Each pixel is a display element, It has a coloring layer that colors the light from the display element. One of the electrodes of the display element (for example, a pixel) The electrodes and the colored layer can be arranged facing each other. Also, between adjacent pixels The colored layers are spaced apart.

[0030] Furthermore, it has a structure located between two coloring layers in adjacent pixels. For example, it can be placed between two pixels that correspond to different colors.

[0031] The display device has a configuration in which, for example, a display element, a coloring layer, and a structure are sandwiched between a pair of substrates. This can be done. For example, one substrate may have electrodes for a display element, and the other substrate may have electrodes for a display element. This can be a structure in which a colored layer or the like is provided, and these are bonded together by an adhesive layer or the like. Here, the structure may be formed on either substrate side.

[0032] The structure functions as a spacer to prevent the pair of substrates from getting too close together. It may also be possible. Furthermore, the structure may have a function to suppress color mixing of adjacent pixels. Example For example, when an EL element is applied to a display element, the leakage current between adjacent EL elements is suppressed. The structure may have a function to suppress color mixing between adjacent pixels by controlling it.

[0033] Furthermore, a part of the structure is above the surface (bottom surface) of the colored layer that faces the display element, i.e., the display surface It is preferable to have a configuration where the two colored layers are located to the side. In other words, two spaced-apart colored layers It is preferable to have a configuration in which the structure is fitted in between. However, the colored layer and It is not necessary for them to be in direct contact with the structure; a space or adhesive layer may be interposed between them. stomach.

[0034] This configuration allows the distance between the pair of substrates to be made extremely small. The distance between the display element and the colored layer, more specifically, the distance between the pair of electrodes of the display element It also becomes possible to bring the distance between the other side and the colored layer as close as possible. This improves the viewing angle characteristics. This can improve performance. Also, among the light emitted from the display element, the light emitted at an oblique angle can also be improved. Because it can be extracted efficiently, power consumption can also be reduced. Also, its thin profile A display device can be realized.

[0035] Display elements include LEDs and OLEDs (Organic Light Emitting Devices). (g Diode), or QLED (Quantum-dot Light Emitting Diode) Light-emitting elements such as (ing diodes) and optical elements such as liquid crystal elements, which are affected by current or voltage. This involves using an element in which the brightness of the light emitted by the element, or the light emitted through the element, is controlled. It is possible.

[0036] In addition, MEMS (Micro Electro Mechanisms) are used as display elements. This involves using optical systems elements, electron emission elements, and other optical elements. This is possible. As for display elements using MEMS, shutter-type MEMS display elements, Examples include optical interference-based MEMS display elements. Examples of electron emission elements include carbon nano Tubes may also be used. Other optical elements include microcapsule systems and electric systems. This method utilizes pneumophoresis, electrowetting, and electronic powder fluid (registered trademark) methods. Elements can be used.

[0037] Below, we will explain more specific configuration examples with reference to the diagrams.

[0038] [Configuration Example 1] Figure 1(A) is a schematic perspective view of a display device 10 according to one embodiment of the present invention. The display device 10 is The substrate 21 and substrate 31 are bonded together. In Figure 1(A), substrate 31 is shown as a dashed line. It is explicitly stated there.

[0039] The display device 10 has a display unit 32, a circuit 34, wiring 35, etc. The substrate 21 has, for example The conductive layer 23, which functions as a pixel electrode, is included in the circuit 34, wiring 35, and display unit 32. It is provided. Also, Figure 1(A) shows an example where IC43 and FPC42 are mounted on the substrate 21. This indicates that.

[0040] Circuit 34 can be, for example, a circuit that functions as a scan line driving circuit.

[0041] The wiring 35 has the function of supplying signals and power to the display unit 32 and the circuit 34. Power is input to wiring 35 from an external source via FPC42 or from IC43.

[0042] Furthermore, in Figure 1(A), the substrate 2 is formed using the COG (Chip On Glass) method, etc. This shows an example where IC43 is provided in 1. IC43 is, for example, a scan line drive circuit, Alternatively, an IC that functions as a signal line drive circuit can be applied. When a circuit is provided that functions as a scan line drive circuit and a signal line drive circuit, or when a scan line drive circuit and An external circuit is provided that functions as a signal line drive circuit, and the display device 10 is driven via the FPC42. In cases where signals for operation are input, the IC43 may be omitted. IC43 is mounted on FPC42 using the COF (Chip On Film) method, etc. That's fine.

[0043] Figure 1(A) shows an enlarged view of a part of the display unit 32. The display unit 32 has multiple tables The conductive layers 23 of the display element are arranged in a matrix. The conductive layers 23 are, for example, pixels. It functions as an electrode. Also, the structure 11 is positioned between two adjacent conductive layers 23. Here, structure 11 has two conductive layers 23 that two pixels corresponding to different colors have It is preferable that they be placed in between. Also, structure 11 has two pixels corresponding to the same color It may be placed between the conductive layers 23.

[0044] [Cross-sectional configuration example 1] [Cross-sectional configuration example 1-1] Figure 1(B) shows an example of a cross-section corresponding to the cutting line A1-A2 in Figure 1(A). Figure B) shows a cross-section of a region containing two adjacent pixels (sub-pixels). An example is shown in which a light-emitting element 40 with a top emission structure is applied as a display element. Therefore, the side with the substrate 31 becomes the display side.

[0045] The display device 10 has a configuration in which a substrate 21 and a substrate 31 are bonded together with an adhesive layer 39. The light-emitting element 40 can also be said to be sealed by the adhesive layer 39.

[0046] A transistor 70, a light-emitting element 40, a structure 11, and the like are provided on the substrate 21. Furthermore, insulating layers 73, 81, 82, etc. are provided on the substrate 21. On the side of substrate 31 facing substrate 21, there are a colored layer 51a, a colored layer 51b, and a light-shielding layer 52 And so on.

[0047] The colored layer 51a and the colored layer 51b are provided spaced apart from each other. The light-shielding layer 52 is attached It is provided between the color layer 51a and the colored layer 51b. Here, as shown in Figure 1(B), It is preferable that the light layer 52 and the colored layer 51a are arranged so that parts of them overlap. The same applies to the light-shielding layer 52 and the colored layer 51b.

[0048] The transistor 70 consists of a conductive layer 71 that functions as a gate, a semiconductor layer 72, and a gate insulating layer. An insulating layer 73 that functions as a source, a conductive layer 74a that functions as either a source or a drain, It has a conductive layer 74b, etc., which functions as either a drain or the other.

[0049] An insulating layer 81 is provided covering the transistor 70. A conductive layer 2 is also placed on the insulating layer 81. 3 is provided. The conductive layer 23 and the conductive layer 74b are separated by an opening provided in the insulating layer 81. They are electrically connected. A portion of the conductive layer 23 functions as a pixel electrode.

[0050] An insulating layer 82 is provided covering the edges of the conductive layer 23. The insulating layer 82 has a tapered shape. It is preferable that this be done.

[0051] The structure 11 is provided on the insulating layer 82. In a plan view, the structure 11 is adjacent to It is located between the two light-emitting elements 40. Also, in a plan view, the structure 11 is adjacent to two It has a portion located between the colored layers (colored layer 51a and colored layer 51b). It is preferable that element 1 is positioned so as to overlap a portion of the light-shielding layer 52 in a plan view.

[0052] An EL layer 24 and a conductive layer 25 are provided on the conductive layer 23, forming a light-emitting element 40. There is. A portion of the conductive layer 25 functions as a common electrode of the light-emitting element 40. The light-emitting element 40 is By creating a potential difference between conductive layer 23 and conductive layer 25, and passing a current through EL layer 24, light is emitted. ru.

[0053] Figure 1(B) shows an example where the EL layer 24 and the conductive layer 25 are formed across multiple pixels. This shows that the EL layer 24, in addition to the exposed portion of the conductive layer 23, includes the insulating layer 82 and the structure. It is provided covering layer 11. Furthermore, the conductive layer 25 is provided covering layer 24. .

[0054] In Figure 1(B), the structure 11 is on the light-emitting element 40 side of the colored layer 51a and the colored layer 51b. It has a portion located above the surface (bottom surface). This results in the colored layer 51a and the colored layer 5 The structure 11 can be arranged so that it fits between 1b. A colored layer 51a, a colored layer 51b, or a light-shielding layer 52, and the structure 11 (or covering the structure 11) The conductive layer 25 (which is provided in this manner) does not necessarily need to be in contact with the surface of the conductive layer 25, as shown in Figure 1 (B As shown in ), an adhesive layer 39 may be provided between them.

[0055] By adopting this configuration, the distance between substrate 21 and substrate 31 can be made extremely small. This is possible. When light from the light-emitting element 40 is emitted through the aperture of the light-shielding layer 52, the light-shielding layer The closer the distance between 52 and the light-emitting element 40, the wider the angle at which light can be emitted. Therefore, it is possible to realize a display device with improved viewing angle characteristics.

[0056] Furthermore, it becomes possible to make the distance between the light-emitting element 40 and the colored layer 51a extremely short. Therefore, most of the light emitted by the light-emitting element 40 towards the display surface is incident on the colored layer 51a. This is the result. At this time, the light-emitting element 40 is transferred to the coloring layer (for example, coloring layer 51b) of the adjacent pixel. If there is light emitted at an oblique angle, that light is first identified by the colored layer 51a. Because light other than that of the specified color is absorbed, it is no longer emitted to the outside through the colored layer 51b. Therefore, color mixing between adjacent pixels is greatly reduced, and the chromaticity when viewing the display surface from an oblique angle is significantly reduced. It is possible to suppress change.

[0057] For comparison, Figure 2(A) shows the placement of a colored layer between two adjacent pixels. This shows an example where color mixing between adjacent pixels is suppressed. In Figure 2(A), the colored layer 51a, In addition to the colored layer 51b, a portion of the colored layer 51c is also shown. Furthermore, Figure 2(B) shows Figure 2( An example in A) where the structure 11 is not provided and the distance between substrate 31 and substrate 21 is reduced. It is showing.

[0058] In the configurations shown in Figures 2(A) and (B), the overlapping portion of the two colored layers is provided between adjacent pixels. This suppresses color mixing between adjacent pixels. However, substrate 21 and substrate 3 The distance of 1 is limited by the thickness of the overlapping portion of the two colored layers, and the structure where the colored layers do not overlap Compared to this, it becomes difficult to sufficiently reduce the distance between substrates. On the other hand, as illustrated in Figure 1(B) In this configuration, the colored layers are spaced apart, and the structure 11 is positioned to fit between them. Therefore, in order to suppress color mixing, the distance between substrates can be made extremely small. Compared to the configurations illustrated in Figures 2(A) and (B), the configuration illustrated in Figure 1(B) is diagonal. This effectively reduces the change in brightness when viewed from a specific direction.

[0059] Structure 11 provides space to prevent substrates 21 and 31 from getting too close together. It may also have the function of a support. For this reason, the surface of the structure 11, or the structure 11 The surface of the covering layer (such as the conductive layer 25) is in contact with a structure provided on the substrate 31, such as the light-shielding layer 52. It's okay to do so.

[0060] Furthermore, the structure 11 may have the function of absorbing at least a portion of the visible light. As a result, light is emitted diagonally through structure 11 toward the colored layer of adjacent pixels. By absorbing a portion of the color, color mixing between adjacent pixels can be suppressed more effectively. Structure 1 In step 1, a colored layer 51a or colored layer 51b, or a material similar to that used for the light-shielding layer 52, may be used.

[0061] In this case, the display device 10 has an active element such as a transistor 70. This explanation will focus on the case of a matrix-type display device, but also on passive matrices that do not have active elements. It can also be made into a RIX-type display device. In that case, without providing transistor 70, for example Alternatively, the element located between the conductive layer 23 and the substrate 21 can be omitted.

[0062] Figure 3(A) shows a magnified view of the area enclosed by the dashed line in Figure 1(B).

[0063] As shown in Figure 3(A), the height h1 is defined as the height of the highest (thickest) part of the structure 11. Furthermore, the height of the lowest part of the lower surface of the colored layer 51a is defined as height h2. Also, on the structure 11 Let the height of the highest part of the conductive layer 25 be defined as height h3. Also, the height of the upper surface of the colored layer 51a is defined as the highest part of the conductive layer 25. Let the height of the portion be height h4. Height h4 can be rephrased as the height of the surface formed on the colored layer 51a. It is also possible to set the height of the upper surface of the conductive layer 23 to height h5. Let the height of the upper surface of the conductive layer 25 in a given section be height h6. Here, the height of a certain section is For example, this can be rephrased as the distance from the surface of the substrate 21.

[0064] Here, as shown in Figure 3(A), the height h1 of the structure 11 is the height of the lower surface of the colored layer 51a. Structure 11 is formed such that the temperature is higher than h2. At this time, the conductive material on structure 11 is formed. Similarly, the height h3 of the upper surface of layer 25 is also increased compared to the height h2 when the conductive layer 25 is formed. Here, a portion of the upper surface of the conductive layer 25 and a portion of the lower surface of the light-shielding layer 52 may be in contact.

[0065] Between the upper surface of the conductive layer 25 and the lower surface of the colored layer 51a in a direction perpendicular to the surface of the substrate 21 Let the distance be d1. That is, distance d1 is equal to the difference between height h2 and height h6. The smaller the distance d1, the less color mixing can be reduced between adjacent pixels. d1 is, for example, 0 μm or more and 20 μm or less, preferably 0 μm or more and 10 μm or less, more preferably Alternatively, it can be 0 μm or more and 5 μm or less. When the distance d1 is 0 μm, the conductive layer 25 This means that the colored layer 51a is in contact with it.

[0066] Furthermore, the upper surface of the conductive layer 25 and the colored layer 51a are formed in a direction perpendicular to the surface of the substrate 21. Let the distance between the faces be distance d2. That is, distance d2 is the value obtained by subtracting height h6 from height h4. It is equal to the distance d1 plus the thickness of the colored layer 51a. The smaller the distance d2, the better. This suppresses the decrease in brightness when the display surface is viewed from an oblique angle. (Colored layer 51a) The thickness is, for example, 100 nm to 5 μm, preferably 200 nm to 4 μm. Preferably, the wavelength should be between 500 nm and 3 μm.

[0067] Here, when we say that the distance between A and B is between x and y, within the observed range, A It is sufficient that the interval between B and the given point falls within the range of x (inclusive) to y (inclusive).

[0068] Between the upper surface of the conductive layer 23 and the lower surface of the colored layer 51a in a direction perpendicular to the surface of the substrate 21 Let the distance be distance d3. That is, distance d3 is equal to the value obtained by subtracting height h5 from height h2. Furthermore, the distance d1 is equal to the sum of the thicknesses of the EL layer 24 and the conductive layer 25. When an optical adjustment layer is provided to realize a cavity structure, the thickness of the optical adjustment layer This is assumed to be included in the thickness of the EL layer 24. The smaller the distance d3, the less color mixing occurs between adjacent pixels. This can reduce the thickness of the EL layer 24 depending on the configuration and formation method of the light-emitting element 40. The optimal thickness can be set to, for example, between 20 nm and 1 μm. Furthermore, the thickness of the conductive layer 25 should be optimized according to the material and the required resistance value. However, the thickness can be, for example, between 0.3 nm and 1 μm.

[0069] The distance d3 between the upper surface of the conductive layer 23 and the lower surface of the colored layer 51a is, for example, 20 nm to 22 μm. m or less, preferably 20 nm to 20 μm, more preferably 20 nm to 10 μm or less. Furthermore, it is more preferably 20 nm to 5 μm.

[0070] Furthermore, the upper surface of the conductive layer 23 and the colored layer 51a are formed in a direction perpendicular to the surface of the substrate 21. Let the distance between the faces be distance d4. That is, distance d4 is the value obtained by subtracting height h5 from height h4. It is equal to the distance d3 plus the thickness of the colored layer 51a. The smaller the distance d4, the better. This also helps to suppress the decrease in brightness when viewing the display surface from an oblique angle.

[0071] Next, the shape of structure 11 will be described. As shown in Figure 3(A), structure 11 Let the taper angle of be the taper angle θ. Here, the taper angle of structure 11 is the taper angle of the end of structure 11. This refers to the angle between the bottom surface (the surface in contact with the surface being formed) and its side surface. The taper angle is 0 It is greater than 180 degrees. Here, a taper angle of 90 degrees or less is called a forward taper. A taper greater than 90 degrees is sometimes called a reverse taper.

[0072] The taper angle θ of the structure 11 is 25 degrees or more and 155 degrees or less, preferably 30 degrees or more and 150 degrees. More preferably, the temperature should be between 35 degrees and 145 degrees.

[0073] Here, as shown in Figure 1(B) and Figure 3(A), the EL layer 24 is formed across multiple pixels. If the EL layer 24 has a highly conductive layer, adjacent frames will be affected via the highly conductive layer. Current may flow through the original light-emitting element 40. Alternatively, the EL layer 24 may be a donor element. The same applies when there is a layer containing both qualitative and accepting materials. As a result, the material will not emit light. If the light-emitting element 40 of an adjacent pixel that does not emit light, the color reproduction quality will decrease. There is a problem with this. This phenomenon can also be called crosstalk.

[0074] By setting the taper angle θ of the structure 11 within the above range, E is formed covering the structure 11. Partially thin areas can be formed in the L layer 24. In particular, the structure 11 of the EL layer 24 The portion covering the sides is formed to be thinner than the portion covering the top surface of the structure 11 and the portion on the conductive layer 23. This is possible. In particular, when the structure 11 has an inverse tapered shape, the EL layer 24 is divided. It is also possible to do so. By providing such a structure 11, the EL layer 24 has high conductivity. Even if it has layers, or layers containing both donor and acceptor substances This reduces the current that flows to adjacent pixels through the layer, thus suppressing crosstalk. It is possible.

[0075] Figures 3(B), (C), and (D) show the structure 11 and the EL that covers the structure 11. Examples of cross-sections of layer 24 and conductive layer 25 are shown.

[0076] The structure 11 shown in Figure 3(B) has a forward tapered structure, and the end of the structure 11 of the EL layer 24 This shows that the covering area is becoming thinner.

[0077] The structure 11 shown in Figure 3(C) has an inverse tapered shape, and the end of the structure 11 of the EL layer 24 This shows that the covering area is becoming thinner.

[0078] In Figure 3(D), the ends of the structure 11 have a continuous curvature, and the structure 11 of the EL layer 24 This shows that the part covering the end is thin. As shown in Figure 3(D), structure 11 If the ends have a continuous curvature, then on the side surface of the structure 11, the most The angle that is large relative to the base can be considered as the taper angle θ of the structure 11.

[0079] Furthermore, depending on the materials applied to the insulating layer 82 and the structure 11, these may be visible in cross-sectional observation. It can be difficult to determine the boundary. Also, if the insulating layer 82 and the structure 11 are made of the same material... When used, or when exposure techniques using halftone masks or graytone masks are used, or multiple When the insulating layer 82 and the structure 11 are formed from the same film using techniques such as heavy exposure, In some cases, these boundaries may not exist in practice. In such cases, the part that protrudes upward can be constructed. The structure 11 can be considered as the main body, and the remaining portion as the insulating layer 82. Figure 3(D) shows an example. As an example, the case where there is no interface between the insulating layer 82 and the structure 11 is shown, and these boundaries Examples of lines that can be considered boundaries are shown with dashed lines.

[0080] Furthermore, if the structure 11 has an inverse tapered shape, as shown in Figure 3(E), the structure 11 is covered The EL layer 24 may be divided near the side surface of the structure 11. In this case, the structure 11 is covered The conductive layer 25 may be formed as a thin film near the side surface of the structure 11, but it is formed without being interrupted. It is preferable that this is done so that the EL layer 24 is exposed even near the side surface of the structure 11. Since it can be covered with a conductive layer 25 without exposing any material, reliability can be improved. .

[0081] The above is an explanation of example 1-1 of the cross-sectional configuration.

[0082] The following describes an example where the configuration differs in part from the above example 1-1 of cross-sectional configurations.

[0083] [Cross-sectional configuration example 1-2] Figure 4(A) shows that, compared to Figure 1(B), the thickness of the colored layer 51b is thinner than that of the colored layer 51a. This shows an example of the case.

[0084] The lower surface of the colored layer 51a is lower than the upper surface of the structure 11, and the lower surface of the colored layer 51b is It is positioned higher than the top surface of structure 11. Thus, the thickness of the colored layer differs depending on the pixel. In this case, the structure 11 has a portion located above the lower surface of at least one colored layer. Having it is sufficient.

[0085] [Cross-sectional configuration example 1-3] Figure 4(B) shows an example where the EL layer 24 is manufactured separately for each pixel, compared to Figure 1(B). In the configuration shown in Figure 4(B), the EL layer 24a is provided in the portion that overlaps with the colored layer 51a. Furthermore, an EL layer 24b is provided in the portion that overlaps with the colored layer 51b. EL layer 24a and EL Layer 24b has a layer containing luminescent materials that emit light of different colors from each other. The electrolytic layer 25 is provided across adjacent pixels, with a portion of it covering the structure 11. Furthermore, EL layer 24a and EL layer 24b are not separated between adjacent pixels of the same color. It may have been done.

[0086] Thus, even when different types of EL layers are created, by further having a colored layer, extremely This allows for a display device with improved color reproduction.

[0087] Furthermore, at this time, the structure 11 is used when forming the EL layer 24a and EL layer 24b. This prevents the mask (metal mask) from coming into contact with the surface of the EL layer 24a or EL layer 24b to be formed. It may also function as a spacer.

[0088] [Cross-sectional configuration example 1-4] Figure 4(C) shows an example where the EL layer 24 and the conductive layer 25 are manufactured separately for each pixel. ru.

[0089] Here, in Figure 4(C), the surface of the structure 11 has a liquid-repellent portion 11a. An example is shown. This allows the EL layer 24 and conductive layer 25 to be applied using an inkjet method, dispensing... When using a method that forms using liquid materials such as a spraying method or screen printing, the structure Suppresses the spread of the EL layer 24 and conductive layer 25 material beyond the body 11 to adjacent pixels. Yes, it is possible. As a result, as shown in Figure 4(C), the EL layer 24 and the conductive layer 25 have two structures. It is positioned to be located inside the body 11.

[0090] Here, we have shown an example in which both the EL layer 24 and the conductive layer 25 are manufactured separately for each pixel. The electrolytic layer 25 may be formed across adjacent pixels by methods such as vapor deposition or sputtering. .

[0091] Furthermore, the EL layer 24 may be formed without being separated between adjacent pixels of the same color. The conductive layer 25 is formed without being interrupted between adjacent pixels in the depth direction of Figure 4(C). It is preferable that this is the case.

[0092] [Cross-sectional configuration examples 1-5] Figure 5(A) shows an example where the conductive layer 25 and the light-shielding layer 52 on the structure 11 are in contact. Within the display section 32, a portion of the conductive layer 25 and the light-shielding layer 52 may be in contact, and the display These may be in contact throughout the entire area of ​​section 32. This reduces variations in the distance between circuit board 31 and circuit board 21, thereby reducing display unevenness. ru.

[0093] [Cross-sectional configuration example 1-6] Figure 5(B) shows an example in which the light-shielding layer 52 is provided covering the edge of the colored layer 51a. This configuration allows light to travel through the colored layer 51a toward adjacent pixels. It can effectively suppress it.

[0094] [Cross-sectional configuration example 1-7] Figure 5(C) shows a case where a portion of the single-crystal substrate 91 is used as the semiconductor layer instead of the transistor 70. This shows an example where transistor 90 is applied.

[0095] The transistor 90 shown in Figure 5(C) has a channel region 92 and either a source or a drain. Low-resistance region 94a that functions as the source or the other low-resistance region 94b, an insulating layer 73 that functions as a gate insulating layer, a conductive layer 71 that functions as a gate, etc. It has. The channel region 92, low-resistance region 94a and low-resistance region 94b are on a single crystal substrate. It is formed in 91. In addition, the single crystal substrate 91 is provided with an isolation layer 97 for separating the elements. It's being kicked.

[0096] Furthermore, insulating layers 81a, 81b, and 81c are provided to cover the transistor 90. Furthermore, it has a conductive layer 96 on the insulating layer 81a, and the conductive layer 96 and the low-resistance region 94a Alternatively, the low-resistance region 94b is connected via a connecting layer 95a embedded in the insulating layer 81a. It also has a conductive layer 23 on the insulating layer 81c, and the conductive layer 23 and the conductive layer 96 are separated by the insulating layer 8 The connection is made via the connecting layer 95b embedded in 1c. The conductive layer 96 is connected to the insulating layer 81b. They are formed to be embedded in and these surfaces are flattened.

[0097] This configuration allows for the formation of fine pixels on the single-crystal substrate 91, thus enabling extremely high-quality results. This enables the creation of high-definition display devices.

[0098] [Cross-sectional configuration example 1-8] Figure 6(A) shows an example where the structure 11 is provided on the substrate 31 side.

[0099] The structure 11 shown in Figure 6(A) has a lower surface height of the colored layer 51a and the colored layer 51b. It is positioned so as to be on the substrate 31 side, above the height of the bottom surface.

[0100] Furthermore, the colored layers 51a and 51b are positioned inside the opening of the insulating layer 82. It is preferable that it is provided in this location. This allows the colored layer 51a and the colored layer 51b to emit light. The distance to element 40 can be made smaller.

[0101] Furthermore, the structure 11 is positioned to overlap with the insulating layer 82. Structure 11 and conductive layer The adhesive layer 39 may be in contact with 25, or it may be located between them.

[0102] [Cross-sectional configuration examples 1-9] Figure 6(B) shows an example where the EL layer 24 is manufactured separately for each pixel, compared to Figure 6(A). The EL layer 24a is provided in superimposed on the colored layer 51a, and the EL layer 24b is provided in superimposed on the colored layer 51b It is provided in overlapping layers. The conductive layer 25 is also provided across adjacent pixels.

[0103] Furthermore, in Figure 6(B), in the region overlapping with the insulating layer 82, a part of the structure 11 and the conductive layer 2 This shows an example where part of 5 is in contact with something.

[0104] [Cross-sectional configuration example 1-10] Figure 6(C) shows an example where the EL layer 24 and the conductive layer 25 are manufactured separately for each pixel. ru.

[0105] Furthermore, the insulating layer 82 has a liquid-repellent portion 82a on its surface, and the EL layer 24a, An example is shown where the EL layer 24b and the conductive layer 25 are located inside the opening of the insulating layer 82. Yes, they are.

[0106] Furthermore, Figure 6(C) shows an example where a part of the structure 11 and a part of the insulating layer 82 are in contact. This indicates that.

[0107] [Cross-sectional configuration example 1-11] Figure 7(A) shows an example where a liquid crystal element 60 is applied to the display element. Liquid crystal element 6 0 has a conductive layer 61, a liquid crystal 62, and a conductive layer 63. Liquid crystal element 60 shown in Figure 7(A) This is a transmissive liquid crystal element to which VA (Vertical Alignment) mode is applied. He is a child.

[0108] A conductive layer 61 is provided on the insulating layer 81. The conductive layer 61 is connected through an opening in the insulating layer 81. It is electrically connected to the conductive layer 74a of transistor 70.

[0109] On the substrate 31 side, the insulating layer 6 covers the colored layer 51a, the colored layer 51b, and the light-shielding layer 52. 4 is provided. The insulating layer 64 is included in the colored layer 51a, the colored layer 51b, or the light-shielding layer 52. The device may also have a function to suppress the diffusion of impurities into the liquid crystal 62.

[0110] The conductive layer 63 is provided covering the insulating layer 64. The liquid crystal element 60 is connected to the conductive layer 61. The structure has liquid crystal 62 sandwiched between two electrolytic layers 63.

[0111] Here, the insulating layer 64 is between the colored layer 51a and the colored layer 51b, and its upper surface is the colored layer 5 It is preferable to have a portion located above the lower surface of 1a (towards the substrate 31). The surface of the insulating layer 64 has a recessed portion in the region between the colored layer 51a and the colored layer 51b. This is preferable. Furthermore, the structure 11 placed on the substrate 21 side fits into the recess of the insulating layer 64. It is arranged in such a way. With this configuration, the structure 11 placed on the substrate 21 side It can be positioned to fit between two adjacent colored layers. Therefore, insulation Compared to the case where the surface of layer 64 is flat, the distance between substrate 21 and substrate 31 can be reduced. It is capable of improving viewing angle characteristics.

[0112] Structure 11 is a spacer for maintaining a predetermined distance between substrate 21 and substrate 31. The structure 11 optimizes the distance between the conductive layer 61 and the conductive layer 63 in the liquid crystal element 60. It can be controlled to a certain distance.

[0113] Although not shown in the diagram here, the space between the conductive layer 61 and the liquid crystal 62, and the space between the conductive layer 63 and the liquid crystal 62 An alignment film for controlling the orientation of the liquid crystal 62 may be provided between them.

[0114] Here, the distance between the upper surface of the conductive layer 61 and the lower surface of the colored layer 51a, etc., is exemplified in Figure 3(A). This corresponds to the distance d3. This distance can be optimized by the configuration of the liquid crystal element 60. That is fine, but for example, 1 μm or more and 20 μm or less, preferably 1.5 μm or more and 10 μm or less, more Preferably, the particle size can be between 2 μm and 5 μm.

[0115] [Cross-sectional configuration example 1-12] Figure 7(B) shows that the display element is FFS (Fringe Field Switching). This shows an example using a liquid crystal element 60 to which the ) mode is applied. Both the conductive layer 61 and the conductive layer 63 are provided on the substrate 21 side.

[0116] A conductive layer 61 is provided on an insulating layer 81, and an insulating layer 65 is provided covering the conductive layer 61. Furthermore, a conductive layer 63 is provided on the insulating layer 65. The conductive layer 63 has a comb-like upper surface shape. or has an upper surface shape with one or more openings (slits).

[0117] The conductive layer 61 is electrically connected to the transistor 70 and functions as a pixel electrode. The conductive layer 63, provided on the conductive layer 61 via the edge layer 65, functions as a common electrode. Oh, the conductive layer 63 passes through the openings provided in the insulating layer 65 and the insulating layer 81 to the transistor 70 The conductive layer 74a may be electrically connected to it and function as a pixel electrode. 61 can be provided across adjacent pixels and used as a common electrode.

[0118] In Figures 7(A) and (B), by using a material that transmits visible light in the conductive layer 61, transmission occurs. It can be made into a liquid crystal element of the type. Also, both the conductive layer 61 and the conductive layer 63 are made transparent to visible light. Using a highly conductive material is preferable because it allows for a higher aperture ratio.

[0119] In the case of a reflective liquid crystal element, a material that reflects visible light may be used for either the conductive layer 61 or the conductive layer 63, or both. Using a material that reflects visible light for both of them can increase the aperture ratio. Also, a material that reflects visible light may be used for one of the conductive layer 61 and the conductive layer 63, and a material that transmits visible light may be used for the other.

[0120] Alternatively, a semi-transmissive liquid crystal element may be realized by using a material that reflects visible light for the conductive layer 61 and a material that transmits visible light for the conductive layer 63. At this time, a reflection mode using the light reflected by the conductive layer 61 and a transmission mode using the light from the backlight transmitted through the slit provided in the conductive layer 61 can be switched.

[0121] Also, although not shown in FIGS. 7(A) and (B), a backlight can be arranged outside the substrate 21 or outside the substrate 31. Also, polarizing plates can be arranged outside the substrate 21 and outside the substrate 31, respectively.

[0122] Here, the distance between the upper surface of the conductive layer 63 and the lower surface of the coloring layer 51a or the like corresponds to the distance d3 illustrated in FIG. 3(A). Although this distance may be optimized according to the configuration of the liquid crystal element 60, for example, it can be 1 μm or more and 20 μm or less, preferably 1.5 μm or more and 10 μm or less, more preferably 2 μm or more and 5 μm or less.

[0123] [Example of Arrangement Method of Structure] FIGS. 8(A) to (F) show enlarged views of a part of the display unit 32 when viewed from the display surface side. Here, the light shielding layer 52 is provided on the outermost side of the display surface, and below it are the coloring layer 51a, the coloring layer 51b, and ​​​​​​​​​​A colored layer 51c is provided, and below that, a conductive layer 23 and a structure 11 are provided. An example is shown. Structure 11 and conductive layer 23, etc., are shown with dashed lines.

[0124] Figures 8(A) to (D) show the colored layer 51a, the colored layer 51b, and the colored layer 51c, as well as the shielding layer. This shows an example where the light-blocking layer 52 is arranged in a stripe pattern. A layer has parts that overlap with each other.

[0125] Figure 8(A) shows an example in which an island-shaped structure 11 is placed between two conductive layers 23. The structure 11 is placed in overlap with the light-shielding layer 52.

[0126] Figure 8(A) shows an example where the structure 11 is longer than the longitudinal length of the conductive layer 23. Figure 8 (B) is an example where the structure 11 is shorter than the longitudinal length of the conductive layer 23. Figure 8(C) This is an example where structure 11 has a dot-like shape. Figure 8(D) shows the structure This is an example where 11 is arranged in a striped pattern, similar to the light-shielding layer 52, etc.

[0127] Figures 8(E) and (F) show examples where the light-shielding layer 52 has a grid-like shape. In this case, the colored layer 51a, colored layer 51b, and colored layer 51c each overlap with the conductive layer 23. It has an island-like shape.

[0128] In Figure 8(E), island-shaped structures 11 are provided along each of the four sides of the conductive layer 23. This shows an example where the structure 11 has a grid-like shape. Figure 8(F) also shows an example where the structure 11 has a grid-like shape. This indicates that.

[0129] The shape and position of the structure 11 are not limited to those described above, and may also be between two adjacent colored layers. It can be positioned to be located at [this location].

[0130] [Cross-sectional configuration example 2] The following describes a more detailed example of the cross-sectional configuration of the display device 10 according to one aspect of the present invention. This section will specifically discuss the case where a top-emission type light-emitting element is applied to the display element. I will reveal it.

[0131] [Cross-sectional configuration example 2-1] Figure 9 is a schematic cross-sectional view of the display device 10. In Figure 9, the FPC42 in Figure 1(A) This shows an example of a cross-section including the region containing the circuit 34, the region containing the display unit 32, etc. Figure 9 also shows the display section 32, which includes a cross-section of the region containing transistors, etc., and the region between adjacent pixels. The cross-sections of the region are shown side by side.

[0132] Substrate 21 and substrate 31 are bonded together by an adhesive layer 141. A portion of 1 has the function of sealing the light-emitting element 40. Also, a polarizing plate is located on the outer surface of the substrate 31. It is preferable to have 130.

[0133] The substrate 21 contains a light-emitting element 40, transistor 201, transistor 202, and transistor A terminal 205, a capacitive element 203, a terminal section 204, wiring 35, a structure 11, etc. are provided. Furthermore, the substrate 31 is provided with a colored layer 131a, a colored layer 131b, a light-shielding layer 132, etc. The light-emitting element 40 has a structure in which a conductive layer 111, an EL layer 112, and a conductive layer 113 are stacked. It has. A portion of the conductive layer 111 functions as a pixel electrode, and a portion of the conductive layer 113 functions as a common electrode. It functions as a pole. The light-emitting element 40 is a top-emission type light-emitting element that emits light towards the substrate 31. It is an optical element.

[0134] In FIG. 9, as an example of the display unit 32, a cross section including one subpixel is shown. For example, the subpixel includes a transistor 202, a capacitor element 203, a transistor 205, a light-emitting element 40 and a coloring layer 131a. For example, the transistor 202 is a switching transistor (selection transistor), and the transistor 205 is a transistor (driving transistor) for controlling the current flowing through the light-emitting element 40.

[0135] Also in FIG. 9, as an example of the circuit 34, a cross section including a transistor 201 is shown.

[0136] Materials that transmit different colors can be used for the coloring layer 131a, the coloring layer 131b, etc. By arranging subpixels that exhibit red, subpixels that exhibit green, and subpixels that exhibit blue, full-color display can be performed.

[0137] On the substrate 21, insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, an insulating layer 214, an insulating layer 215, and an insulating layer 216 are provided. A part of the insulating layer 211 functions as a gate insulating layer of the transistor, and another part functions as a dielectric of the capacitor element 203. The insulating layer 212, the insulating layer 213, and the insulating layer 214 are provided so as to cover each transistor and the capacitor element 203 etc. The insulating layer 214 has a function as a planarization layer. Here, as an insulating layer covering the transistor etc., a case having three layers of the insulating layer 212, the insulating layer 213, and the insulating layer 214 is shown, but it is not limited to this, and it may be four or more layers, or it may be a single layer, or two layers. Also, if the insulating layer 214 that functions as a planarization layer is unnecessary, it may not be provided. The insulating layer 215 is provided so as to cover the conductive layer 224. The insulating layer 21 5 may also function as a planarizing layer. The insulating layer 216 is at the edges of the conductive layer 111 and , provided to cover contact portions and the like that electrically connect conductive layer 111 and conductive layer 224 The insulating layer 216 functions as a planarization layer.

[0138] Furthermore, a structure 11 is provided on the insulating layer 216. As shown in Figure 9, the colored layer 1 A portion of the structure 11 is positioned higher than the lower surface of 31a.

[0139] Furthermore, transistors 201, 202, and 205 are partially A conductive layer 221 functions as a gate electrode, with a portion of it functioning as a source electrode or drain electrode. It has a conductive layer 222 and a semiconductor layer 231. Here, the same conductive film is obtained by processing. The same hatching pattern is applied to multiple layers.

[0140] In Figure 9, the capacitive element 203 is a conductive layer that functions as the gate electrode of the transistor 205. Part of 221, part of the insulating layer 211, and the source electrode or drain of transistor 205 This shows an example where a portion of the conductive layer 222, which functions as an electrode, is included.

[0141] Of the pair of conductive layers 222 of transistor 202, the capacitive element 203 is electrically connected The conductive layer 222 that is not functioning functions as part of the signal line. Also, transistor 202 The conductive layer 221, which functions as a gate electrode, also functions as part of the scan line.

[0142] In Figure 9, as an example of transistor 202, a transistor having one gate electrode is shown. It is shown that channels are formed in transistors 201 and 205. A semiconductor layer 231 is sandwiched between two gate electrodes (conductive layer 221 and conductive layer 223). This shows a transistor. A transistor with two gate electrodes in this way is... It is possible to control the voltage value. Also, by connecting two gate electrodes, etc., The transistor may be driven by supplying a signal. Compared to other transistors, this transistor can increase its field-effect mobility and increase its on-current. This makes it possible. As a result, it becomes possible to create circuits capable of high-speed operation. Furthermore, This can reduce the circuit footprint. By using transistors with high on-current... Therefore, when the display device is made larger or higher resolution, even if the number of wires increases, each wire It is possible to reduce signal delay in lines. This can improve, for example, display unevenness. It is possible.

[0143] Note that the transistors in circuit 34 and the transistors in display unit 32 have the same structure. It may be constructed in the same way. Also, all of the transistors in circuit 34 have the same structure. Alternatively, a combination of transistors with different structures may be used. Also, the display unit 32 Multiple transistors may all have the same structure, or they may have different structures. You may also use it in combination with other characters.

[0144] Of the insulating layers 212 and 213 covering each transistor, at least one is protected from water and It is preferable to use a material that does not easily allow impurities such as hydrogen to diffuse. Such an insulating layer is It can function as a rear film. This allows external impurities to reach the transistor. This effectively suppresses the diffusion of particles, enabling the creation of a highly reliable display device.

[0145] The conductive layer 224 provided on the insulating layer 214 functions as wiring. Transients through openings provided in insulating layer 214, insulating layer 213, and insulating layer 212 It is electrically connected to either the source or drain of the sta. Also, a drawing is drawn on the insulating layer 215. A conductive layer 111 that functions as an electrode is provided. The conductive layer 111 is provided on the insulating layer 215. It is electrically connected to one of the conductive layers 224 through the opening. In Figure 9, the conductive Layer 111 connects to either the source or drain of transistor 205 via the conductive layer 224, providing electrical connection. They are connected.

[0146] An insulating layer 216 is provided covering the edges of the conductive layer 111. The EL layer 112 is a conductive layer 111, insulating layer 216, and the upper surface of structure 11 are provided covering the structure. Also, conductive layer 11 Layer 3 is provided covering the EL layer 112.

[0147] In the light-emitting element 40, the conductive layer 111 is made of a material that reflects visible light, and the conductive layer 113 A material that transmits visible light is used. With this configuration, light is emitted from the substrate 31 side. It can be a top-emission type light-emitting element. Therefore, it is possible to place elements such as transistors and capacitive elements on the lower side, The efficiency can be increased. Furthermore, both conductive layer 111 and conductive layer 113 transmit visible light. By using this material, a dual emission system is created that emits light from both the substrate 31 side and the substrate 21 side. It may also be used as an N-shaped light-emitting element.

[0148] Furthermore, a light-emitting element exhibiting white light can be suitably used as the light-emitting element 40. By doing so, there is no need to create different light-emitting elements 40 between subpixels corresponding to different colors, This enables the realization of a high-definition display device. At this time, light from the light-emitting element 40 is directed to the colored layer 131a When light passes through such materials, light outside of a specific wavelength range is absorbed. As a result, the extracted light For example, this would produce light that emits a red color.

[0149] Furthermore, a material that reflects visible light is used for the conductive layer 111, and a material that reflects half of the visible light is used for the conductive layer 113. Using a material that is transparent and semi-reflective, and further between the conductive layer 111 and the conductive layer 113, visible light By providing an optical adjustment layer that transmits light, the light-emitting element 40 having a microcavity structure and This may be done. In this case, the thickness of the optical adjustment layer is adjusted according to the subpixels corresponding to different colors. This is sufficient. Furthermore, subpixels with an optical adjustment layer and subpixels without an optical adjustment layer are mixed together. That's fine.

[0150] A light-shielding layer 132 is provided on the surface of the substrate 31 that faces the substrate 21, and the edges of the light-shielding layer 132 and light-shielding Colored layers 131a and 131b are provided to cover the opening of layer 132. 31a, etc., are each arranged in overlap with the light-emitting element 40. The light-shielding layer 132 is A portion of it is positioned overlapping with structure 11.

[0151] The structure 11 can be made of an insulating or conductive material. For example, the structure The body 11 may be made of an insulating material similar to the insulating layer 216. A conductive material may be used, but in that case, the structure 11 will be electrically floating. Alternatively, by applying the same potential to the structure 11 as to the conductive layer 113, the EL layer 112 on the structure 11 can be activated. This prevents it from emitting light.

[0152] Figure 9 shows an example in which the polarizing plate 130 is provided on the side of the substrate 31 opposite to the substrate 21 side. It is preferable to use a circular polarizer as the polarizer 130. Examples of circular polarizers include For example, a device can be used that consists of a linear polarizer and a quarter-wavelength phase difference plate stacked together. This suppresses the reflection of external light from the reflective material (e.g., conductive layer 111, etc.) provided on the display unit 32. It is possible.

[0153] Figure 9 shows an example in which the light-emitting element 40 is sealed with an adhesive layer 141. By using a material with a higher refractive index than gas, a space is created between the light-emitting element 40 and the substrate 31. Compared to the previous method, this method can improve the efficiency of extracting light from the light-emitting element 40.

[0154] Furthermore, a so-called hollow sealing structure can also be used, in which the adhesive layer 141 is arranged around the display section 32. i. At this time, the space formed by the substrate 21, substrate 31, and adhesive layer 141 is filled with air. It is acceptable for it to be filled, but it is preferable that it be filled with an inert gas such as a noble gas or nitrogen gas. It seems so. Also, if the space is under reduced pressure relative to atmospheric pressure in a steady state, the operating environment (for example) This prevents the substrate 31 or substrate 21 from expanding due to the expansion of the space (due to atmospheric pressure or temperature). Yes, it is possible. On the other hand, if the space is under positive pressure relative to atmospheric pressure, impurities such as moisture will be absorbed into the substrate 31, the substrate 21, the adhesive layer 141, or diffusion into the space through the gaps therebetween can be suppressed.

[0155] A terminal portion 204 is provided in the region near the edge of the substrate 21. The terminal portion 204 is connected It is electrically connected to the FPC42 via the subsequent layer 242. In the configuration shown in Figure 9, wiring 3 This shows an example of forming the terminal portion 204 by laminating a part of 5 with the conductive layer 111.

[0156] The above is an explanation of example 2-1 of the cross-sectional configuration.

[0157] [Cross-sectional configuration example 2-2] Figure 10 shows a display device 10 using a pair of flexible substrates 171 and 181. An example of the cross-sectional configuration is shown. The display device 10 shown in Figure 10 can bend a part of its display surface. .

[0158] The display device 10 shown in Figure 10 has a substrate 171 instead of the substrate 21 in Figure 9, and an adhesive layer 17 2, and an insulating layer 173. Also, instead of substrate 31, there is substrate 181, adhesive layer 182, It has an insulating layer 183.

[0159] The insulating layers 173 and 183 are made of materials that do not easily allow impurities such as water to diffuse. preferable.

[0160] The display device 10 shown in Figure 10 is provided with insulating layers 173 and 183 to protect each transistor. It has a configuration in which the substrate 171 and substrate 181, When materials that easily diffuse impurities such as water and hydrogen are used in adhesive layers 172, 182, etc. However, the insulating layer 17 located inside these (on the side of each transistor and light-emitting element 40) Because the diffusion of these impurities is suppressed by layer 3 and the insulating layer 183, reliability is improved. It can be done. Also, materials such as substrate 171, substrate 181, adhesive layer 172, adhesive layer 182 When selecting materials, there is no need to consider the diffusion properties of impurities, so a variety of materials can be used. It is possible.

[0161] [Example of manufacturing method] Here, we will describe a method for manufacturing a flexible display device.

[0162] For convenience, here we will refer to optical components such as stacked structures including pixels and circuits, and colored layers (color filters). A stacked structure including the electrodes and wiring that make up the touch sensor, etc., together We will refer to this as the element layer. The element layer includes, for example, display elements, and in addition to display elements, it also includes electric elements. It may also include wiring for electrical connections, and elements such as transistors used in pixels and circuits.

[0163] Furthermore, here, a flexible member (for example, in Figure 10) ultimately supports the element layer. The circuit boards (such as circuit board 171 and circuit board 181) will be referred to as circuit boards. For example, circuit boards have a thickness This also includes extremely thin films ranging from 10 nm to 200 μm in thickness.

[0164] Typical methods for forming an element layer on a substrate having a flexible insulating surface include There are two methods, as listed below. One is to form the element layer directly on the substrate. Another method involves forming an element layer on a support substrate different from the substrate, and then peeling the element layer from the support substrate. This method involves then transferring the element layer onto the substrate.

[0165] If the material constituting the substrate has heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. When the element layer is formed with the plate fixed to the support substrate, transport within and between devices is It is preferable because it makes things easier.

[0166] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to a substrate, first the support A release layer and an insulating layer are laminated onto a support base, and an element layer is formed on the insulating layer. Subsequently, a support base The material and element layer are separated and transferred to the substrate. At this time, the interface between the support substrate and the peeled layer, and the peeled layer and the substrate are separated. One should select a material in which delamination occurs at the interface of the marginal layer or within the delamination layer. By using heat-resistant materials for the support substrate and release layer, the temperature during the formation of the element layer is reduced. This allows for an increase in the upper limit of the degree, and enables the formation of an element layer with more reliable elements, which is preferable. It seems so.

[0167] For example, as a release layer, a layer containing a high melting point metal material such as tungsten, and the metal material Layers containing oxides are stacked and used, with silicon nitride and silicon oxidized nitride as the insulating layer on the release layer. It is preferable to use a layer made by stacking multiple layers of materials such as silicon nitride. In this context, oxidnitrides refer to materials whose composition contains more oxygen than nitrogen. Nitride oxides refer to materials whose composition contains more nitrogen than oxygen.

[0168] Methods for separating the element layer from the support substrate include applying mechanical force and removing the delamination layer. Examples include chipping or penetrating the peeling interface with a liquid. Alternatively, the difference in thermal expansion between the two layers forming the delamination interface can be used for heating or cooling. The peeling may be performed by this method.

[0169] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, a peeling layer may not be necessary.

[0170] For example, glass is used as the support substrate and an organic resin such as polyimide is used as the insulating layer. This can be done by locally heating a portion of the organic resin using a laser beam or the like. Alternatively, the organic resin may peel off due to physical cutting or piercing of a portion of it by a sharp object. A starting point may be formed, and delamination may be performed at the interface between the glass and the organic resin.

[0171] Alternatively, a heating layer is provided between the support substrate and an insulating layer made of organic resin, and the heating layer is heated. By doing so, delamination may occur at the interface between the heating layer and the insulating layer. The heating layer is a current Materials that generate heat when a fluid is passed through them, materials that generate heat when light is absorbed, and materials that generate heat when a magnetic field is applied. Various materials can be used, such as materials that generate heat. For example, the heating layer can be Semiconductors, metals, and insulators can be selected and used.

[0172] In the method described above, the insulating layer made of organic resin is used as a substrate after peeling. It is possible.

[0173] For example, in the configuration shown in Figure 10, a first release layer and an insulating layer 173 are placed on the first support substrate. After forming them in order, the upper layers of the structure are formed. Separately from this, a second support After forming a second release layer and an insulating layer 183 on the substrate in sequence, the structure above them is formed Next, the first support substrate and the second support substrate are bonded together with the adhesive layer 141. After that, the second support substrate and the second peeling layer are separated at the interface between the second peeling layer and the insulating layer 183. The delamination layer is removed, and the insulating layer 183 and the substrate 181 are bonded together with the adhesive layer 182. The first support substrate and the first release layer are removed by peeling at the interface between the release layer and the insulating layer 173. Then, the insulating layer 173 and the substrate 171 are bonded together with the adhesive layer 172. You can go to either side first.

[0174] The above is a description of the method for manufacturing a flexible display device.

[0175] [Regarding each component] The following sections will explain each of the components listed above.

[0176] A substrate having a flat surface can be used for the display device. The substrate on the side from which the light is extracted uses a material that transmits the light. For example, glass, quartz, etc. Materials such as lamination, sapphire, and organic resins can be used.

[0177] By using a thin substrate, it is possible to make the display device lighter and thinner. By using a substrate with a thickness sufficient to be flexible, a flexible display device can be realized. Cut.

[0178] Furthermore, the substrate on the side from which light is not extracted does not need to be translucent, as mentioned above. In addition to the base plate, metal substrates can also be used. Metal substrates have high thermal conductivity, and the entire substrate Because it can easily conduct heat to the body, it can suppress localized temperature increases in the display device, which is advantageous. It seems that in order to obtain flexibility and bendability, the thickness of the metal substrate should be between 10 μm and 200 μm. The lower value is preferable, and a thickness of 20 μm or more and 50 μm or less is more preferable.

[0179] There are no particular limitations on the materials that make up the metal substrate, but for example, aluminum, copper, and nickel are used. Preferably, metals such as buckle, or alloys such as aluminum alloy or stainless steel are used. It is possible.

[0180] In addition, insulating treatment is performed by oxidizing the surface of the metal substrate or forming an insulating film on the surface. A substrate that has been treated may be used. For example, a coating method such as spin coating or dip coating, or an electric coating method may be used. An insulating film may be formed using methods such as deposition, vapor deposition, or sputtering, or in an oxygen atmosphere. In addition to leaving it exposed to air or heating it, an oxide film can be formed on the surface of the substrate by methods such as anodizing. That's fine.

[0181] Examples of materials that are flexible and transparent to visible light include, for example, materials that are flexible to a certain degree. Glass of varying thicknesses, polyethylene terephthalate (PET), polyethylene naphthalate Polyester resins such as (PEN), polyacrylonitrile resin, polyimide resin, polymer Chill methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PE) S) Resins, polyamide resins, cycloolefin resins, polystyrene resins, polyamide resins Examples include plastic resins, polyvinyl chloride resins, and polytetrafluoroethylene (PTFE) resins. It is preferable to use a material with a low coefficient of thermal expansion, for example, a material with a coefficient of thermal expansion of 30 ×10 -6 Polyamide-imide resins, polyimide resins, PET, etc., with a K of 0.1 or less are preferably used. It is possible to have a substrate made of glass fiber impregnated with organic resin, or an inorganic filler made of organic resin. It is also possible to use substrates in which the thermal expansion coefficient has been reduced by mixing with resin. Because the circuit board is lightweight, the display device using it can also be made lightweight.

[0182] If the above material contains fibrous material, the fibrous material is a high strength organic or inorganic compound. High-strength fibers are used. Specifically, high-strength fibers are fibers with a high tensile modulus or Young's modulus. This refers to polyvinyl alcohol-based fibers, polyester fibers, and poly- Aramid fibers, polyethylene fibers, aramid fibers, poly(p-phenylenebenzobisoxide) Examples include sazole fibers, glass fibers, or carbon fibers. Examples of glass fibers include E-glass. Examples include glass fibers using S glass, D glass, Q glass, etc. These are woven fabrics. Alternatively, it can be used in the form of a nonwoven fabric, and a structure can be made by impregnating this fiber with resin and hardening the resin. It may be used as a flexible substrate. As a flexible substrate, it may be made of a fiber and a resin. Using such a structure improves reliability against damage caused by bending and localized pressure, therefore it is preferred. It's nice.

[0183] Alternatively, a thin, flexible material such as glass or metal can be used as the substrate. Alternatively, a composite material may be used in which glass and resin materials are bonded together by an adhesive layer.

[0184] A hard coat layer is applied to a flexible substrate to protect the surface of the touch panel from scratches, etc. (Example) For example, silicon nitride, aluminum oxide, etc.) or a layer of material that can distribute pressure (for example, Aramid resin, etc., may be laminated. Also, moisture may reduce the lifespan of the display element. To suppress the effects of other factors, a flexible substrate may be laminated with a low-permeability insulating film. For example, silicon nitride, silicon oxide nitride, silicon oxide nitride, aluminum oxide, Inorganic insulating materials such as aluminum nitride can be used.

[0185] The substrate can also be constructed by stacking multiple layers. In particular, it can be configured to include a glass layer. This improves barrier properties against water and oxygen, resulting in a more reliable display device.

[0186] [Transistor] A transistor consists of a conductive layer that functions as the gate electrode, a semiconductor layer, and a source electrode. A functional conductive layer, a conductive layer that functions as a drain electrode, and a gate insulating layer that functions as a gate insulating layer. It has an insulating layer. The above shows the case where a bottom-gate transistor is applied. It is.

[0187] The structure of the transistors in the touch panel according to one aspect of the present invention is not particularly limited. For example, it could be a planar transistor or a staggered transistor. Yes, it can also be used as an inverse staggered transistor. Also, a top-gate or bottom-gate type can be used. Any of the T-type transistor structures may be used. Alternatively, gate electrodes may be placed above and below the channel. It may be provided.

[0188] The crystallinity of semiconductor materials used in transistors is not particularly limited; amorphous semiconductors are also available. Crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with a crystalline region in part) Any semiconductor having a region may be used. If a semiconductor with crystalline properties is used, This is preferable because it suppresses the degradation of the DISTA characteristics.

[0189] Furthermore, semiconductor materials used in transistors include, for example, elements of Group 14 (silicon). Compound semiconductors or oxide semiconductors (such as germanium) can be used as semiconductor layers. Typical examples include semiconductors containing silicon, semiconductors containing gallium arsenide, or acids containing indium. This technology can be applied to synthetic semiconductors and other materials.

[0190] In particular, it is preferable to use oxide semiconductors with a larger band gap than silicon. Using semiconductor materials with a wider band gap and lower carrier density than silicon This is preferable because it reduces the current when the transistor is off.

[0191] In particular, the semiconductor layer has multiple crystalline portions, and the c-axis of the crystalline portion is the surface on which the semiconductor layer is formed. Alternatively, the crystals are oriented roughly perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal regions. It is preferable to use an oxide semiconductor that cannot be manufactured.

[0192] Such oxide semiconductors do not have grain boundaries, so when the display panel is curved... This suppresses the formation of cracks in the oxide semiconductor film due to stress. Therefore, Such oxide semiconductors are suitable for applications that are flexible and can be bent, such as touch panels. It can be used.

[0193] Furthermore, by using an oxide semiconductor with such crystalline properties as the semiconductor layer, the electrical properties This suppresses fluctuations and enables the creation of highly reliable transistors.

[0194] Furthermore, transistors using oxide semiconductors with a larger band gap than silicon, Due to its low off-current, the charge stored in the capacitor connected in series with the transistor can be stored for a long period of time. It is possible to hold it over a period of time. By applying such a transistor to a pixel, It also becomes possible to stop the drive circuit while maintaining the gradation of each pixel. As a result, it becomes extremely quiet. This enables the creation of display devices with reduced power consumption.

[0195] The semiconductor layer is, for example, made of at least indium, zinc, and M(aluminum, titanium, gallium). Um, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium Includes a film represented as an In-M-Zn oxide containing metals such as chromium or hafnium. This is preferable. Furthermore, it reduces variations in the electrical characteristics of transistors using the oxide semiconductor. Therefore, it is preferable to include a stabilizer along with them.

[0196] As stabilizers, metals such as gallium, tin, and HAF are used, including the metals listed in M ​​above. Examples include nium, aluminum, or zirconium. Also, other stabilizers include... These are lanthanides: lanthanum, cerium, praseodymium, neodymium, samarium, Europium, gadolinium, terbium, dysprosium, holmium, erbium, Examples include thulium, ytterbium, and lutetium.

[0197] Examples of oxide semiconductors that constitute the semiconductor layer include In-Ga-Zn oxides, In- Al-Zn oxides, In-Sn-Zn oxides, In-Hf-Zn oxides, In-L α-Zn oxides, In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd -Zn oxides, In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd- Zn oxides, In-Tb-Zn oxides, In-Dy-Zn oxides, In-Ho-Z n-based oxides, In-Er-Zn-based oxides, In-Tm-Zn-based oxides, In-Yb-Zn In-Lu-Zn ​​oxides, In-Sn-Ga-Zn oxides, In-Hf- Ga-Zn oxides, In-Al-Ga-Zn oxides, In-Sn-Al-Zn oxides The materials used include In-Sn-Hf-Zn oxides and In-Hf-Al-Zn oxides. can.

[0198] In this context, In-Ga-Zn oxides are those that have In, Ga, and Zn as their main components. It means an oxide, and the ratio of In, Ga, and Zn is not specified. Other metal elements besides n may be present.

[0199] Furthermore, the semiconductor layer and the conductive layer may have the same metal element from the above oxides. By using the same metal element for both the conductive layer and the conductive layer, manufacturing costs can be reduced. For example, by using metal oxide targets with the same metal composition, manufacturing costs can be reduced. It is possible to process the semiconductor layer and the conductive layer using etching gas or etching. The liquid can be used in common. However, the semiconductor layer and the conductive layer must have the same metallic element. Even if they are similar, the composition may differ. For example, during the manufacturing process of transistors and capacitive elements In some cases, metal elements may be removed from the film, resulting in a different metallic composition.

[0200] The oxide semiconductor constituting the semiconductor layer has an energy gap of 2 eV or more, preferably 2 It is preferable that the energy is 0.5 eV or more, and more preferably 3 eV or more. - By using oxide semiconductors with a wide gap, the off-current of the transistor can be reduced. It is possible.

[0201] When the oxide semiconductor constituting the semiconductor layer is In-M-Zn oxide, In-M-Zn oxide The atomic ratio of metal elements in a sputtering target used to deposit thin films is In≧M It is preferable that Zn≧M is satisfied. In terms of atomic ratio, In:M:Zn = 1:1:1, In:M:Zn = 1:1:1.2, In :M:Zn=3:1:2, 4:2:4.1, etc. are preferred. Note that the raw material of the semiconductor layer to be formed is The number ratios are each based on the original metal elements contained in the sputtering target mentioned above, as an error. This includes a variation of plus or minus 40% in the ratio of offspring.

[0202] As the semiconductor layer, an oxide semiconductor film with a low carrier density is used. For example, the semiconductor layer is , carrier density is 1 × 10 17 / cm 3 The following is preferably 1 × 10 15 / cm3 Hereinafter, preferably 1×10 13 / cm 3 or less, more preferably 1×10 11 / cm 3 or less, <00,01417>even more preferably 1×10 10 / cm 3 less than, and 1×10 -9 / cm 3 or more carrier density oxide semiconductors can be used. Such an oxide semiconductor is called a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. As a result, the impurity concentration is low and the defect level density is low, so it can be said that it is an oxide semiconductor having stable characteristics.

[0203] Note that it is not limited to these, and an appropriate composition may be used according to the semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the required transistor. Also, in order to obtain the semiconductor characteristics of the required transistor, it is preferable to make the carrier density, impurity concentration, defect density, atomic number ratio of metal element and oxygen, interatomic distance, density, etc. of the semiconductor layer appropriate. Yes.

[0204] In the oxide semiconductor constituting the semiconductor layer, if silicon or carbon, which is one of the Group 14 elements, is contained, oxygen deficiency increases in the semiconductor layer and it becomes n-type. Therefore, the concentration of silicon or carbon in the semiconductor layer (concentration obtained by secondary ion mass spectrometry) is 2 ×10 18 atoms / cm 3 or less, preferably 2×10 17 atoms / cm 3 or less and do.

[0205] In addition, alkali metals and alkaline earth metals generate carriers when combined with an oxide semiconductor. This can occur, and the off-current of the transistor may increase. Alkali metals or alkaline earth metals obtained by secondary ion mass spectrometry in the body layer The concentration of 1 × 10 18 atoms / cm 3 The following is preferably 2 × 10 16 atom / cm 3 Do the following:

[0206] Furthermore, if nitrogen is present in the oxide semiconductor that makes up the semiconductor layer, the electrons, which are carriers, This occurs, increasing carrier density and making it more likely to become n-type. As a result, nitrogen-containing oxides are produced. Transistors using semiconductors tend to exhibit normally-on characteristics. Therefore, in the semiconductor layer... The nitrogen concentration obtained by secondary ion mass spectrometry is 5 × 10⁻⁶ 18 atoms / cm 3 The following is preferable:

[0207] Furthermore, the semiconductor layer may have a non-single-crystal structure, for example. A non-single-crystal structure is CAAC. -OS(C-Axis Aligned Crystalline Oxide Sem iconductor, or C-Axis Aligned and AB-pl Anchored Crystalline Oxide Semiconductor Includes ctor, polycrystalline structure, microcrystalline structure, or amorphous structure. In non-single-crystal structures The amorphous structure has the highest defect level density, while CAAC-OS has the lowest defect level density.

[0208] Amorphous oxide semiconductor films, for example, have a disordered atomic arrangement and do not possess crystalline components. Alternatively, an amorphous oxide film may, for example, have a completely amorphous structure and have crystalline parts. do not have.

[0209] Note that the semiconductor layer may be a mixed film having two or more of an amorphous structure region, a microcrystalline structure region, a polycrystalline structure region, a CAA C-OS region, and a single crystal structure region. The mixed film may be, for example, a single layer structure including any two or more of the above-described regions, or may have a stacked structure structure.

[0210] <Configuration of CAC-OS> Hereinafter, the configuration of CAC (Clou d Aligned Complementary)-OS that can be used for the transistor disclosed in one aspect of the present invention will be described .

[0211] In the present specification and the like, a metal oxide is an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as Oxide Semiconductor or simply OS) . For example, when a metal oxide is used for the active layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when described as an OS FET, it can be paraphrased as a transistor having a metal oxide or an oxide semiconductor .

[0212] In the present specification, when a region having a conductor function and a region having a dielectric function of a metal oxide are mixed and the entire metal oxide functions as a semiconductor, it is defined as CAC (Clou d Aligned Complementary)-OS (Oxide Semico nductor), or CAC-metal oxide.

[0213] In other words, CAC-OS means that, for example, the elements constituting the oxide semiconductor are 0.5 nm or larger. The size is 10 nm or less, preferably 0.5 nm to 3 nm, or close to that size, and is unevenly distributed. This is one component of the material. In the following, in oxide semiconductors, one or more The above elements are unevenly distributed, and the region containing the elements is 0.5 nm to 10 nm, preferably, A state in which particles with a size of 0.5 nm to 3 nm, or close to that size, are mixed is called a mosaic pattern. This is also called a patchy pattern.

[0214] In regions where a particular element is concentrated, the physical properties are determined by the properties of that element. For example... If, among the elements that make up metal oxides, elements that tend to be relatively insulators are concentrated in certain areas. The region becomes the dielectric region. On the other hand, among the elements that make up metal oxides, those that are relatively conductive... Regions where elements that tend to be conductive are concentrated become conductive regions. The mosaic-like mixing of body regions allows the material to function as a semiconductor.

[0215] In other words, the metal oxide in one aspect of the present invention is a mixture of materials with different physical properties. Trix composite, or metal matrix composite It is a type of material (metal matrix composite).

[0216] Furthermore, the oxide semiconductor preferably contains at least indium, particularly indium. It is preferable that it also contains zinc. In addition to these, element M (where M is gallium, a Aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium One of the following, selected from luminous, hafnium, tantalum, tungsten, or magnesium. (Or multiple types) may be included.

[0217] For example, CAC-OS in In-Ga-Zn oxide (In- Ga-Zn oxide may also be specifically referred to as CAC-IGZO. ) is indium oxide (hereinafter referred to as InO X1 (Let X1 be a real number greater than 0.) ) or indium zinc Oxides (hereinafter, In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (hereinafter referred to as GaO X3 (Let X3 be a real number greater than 0) ) or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (X4, Y4, oyo Let Z4 be a real number greater than 0. The material separates into parts, creating a mosaic pattern. Ino X1 , or In X2 Zn Y2 O Z2 However, it is uniformly distributed within the membrane. This configuration (hereinafter also referred to as cloud-based) is as follows.

[0218] In other words, CAC-OS is GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 A composite oxide semiconductor having a structure in which a region is the main component and a region is mixed. It is a body. In this specification, for example, the number of atoms of In relative to element M in the first region The first region indicates that the ratio is greater than the atomic ratio of In to element M in the second region. Assume that the concentration of In is higher in this region compared to the second region.

[0219] Note that IGZO is a common name and refers to a single compound composed of In, Ga, Zn, and O. There are cases where this occurs. A typical example is InGaO3(ZnO). m1 (m1 is a natural number), or In (1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is any number) Examples of crystalline compounds are shown.

[0220] The above-mentioned crystalline compounds have a single-crystal structure, a polycrystalline structure, or a CAAC structure. CAAC structure refers to a structure in which multiple IGZO nanocrystals have c-axis orientation and ab-plane orientation This is a crystal structure in which the elements are linked without orientation.

[0221] On the other hand, CAC-OS relates to the material composition of oxide semiconductors. CAC-OS is In, In a material composition containing Ga, Zn, and O, a portion of the material is formed into nanoparticles with Ga as the main component. The observed region and the region observed as nanoparticles mainly composed of In are, This refers to a configuration that is randomly distributed in a mosaic-like manner. Therefore, in CAC-OS, Crystal structure is a secondary factor.

[0222] Furthermore, CAC-OS does not include a layered structure of two or more films with different compositions. For example, a structure consisting of two layers, one with In as the main component and the other with Ga as the main component, includes No.

[0223] Note that GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or InO X1 There may be cases where a clear boundary cannot be observed for the region that is the main component.

[0224] In addition, when one or more selected from aluminum, silicon, boron, yttrium, copper, barium, sodium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium etc. are included, CAC-OS has a structure in which nanoparticle regions with the element as the main component are observed in part and nanoparticle regions with In as the main component are observed in part, and they are randomly dispersed in a mosaic pattern. Partially, nanoparticle regions with the element as the main component are observed, and partially, nanoparticle regions with In as the main component are observed, and each is randomly dispersed in a mosaic pattern.

[0225] <Analysis of CAC-OS> Subsequently, the results of measurements performed on the oxide semiconductor formed on the substrate using various measurement methods will be described. The results will be described.

[0226] ≪Composition and Fabrication Method of Samples≫ Hereinafter, nine samples according to one aspect of the present invention will be described. Each sample is fabricated under different conditions of the substrate temperature and the oxygen gas flow rate when forming the oxide semiconductor. In addition, the sample has a structure including a substrate and an oxide semiconductor on the substrate. The fabrication method of each sample will be described. <The fabrication method of each sample will be described.>

[0227]

[0228] First, a glass substrate is used as the substrate. Subsequently, using a sputtering apparatus, an In-Ga-Zn oxide with a thickness of 100 nm is formed as the oxide semiconductor on the glass substrate. The film formation conditions are such that the pressure in the chamber is 0.6 Pa, and an oxide target (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used for the target. Also, for the sputtering apparatus (In:Ga:Zn = 4:2:4.1 [atomic ratio]) is used. It supplies 2500W of AC power to the oxide target installed inside the unit.

[0229] Furthermore, as a condition for depositing oxide films, the substrate temperature should not be intentionally heated (see below). The temperature was set to room temperature (also called RT), 130°C, or 170°C. Also, Ar and acid The flow rate ratio of oxygen gas to the raw gas mixture (hereinafter also referred to as the oxygen gas flow rate ratio) is 10% Nine samples are prepared by using either 30% or 100% of the solution.

[0230] <<Analysis by X-ray diffraction>> In this section, X-ray diffraction (XRD) was performed on nine samples. The results of the measurement (on) will be explained. The XRD device used was manufactured by Bruker. D8 ADVANCE was used. The conditions were θ / by the Out-of-plane method. In 2θ scanning, the scanning range is 15 to 50 degrees, and the step size is 0.02d. For example, the scanning speed was set to 3.0 degrees / minute.

[0231] Figure 30 shows the results of measuring the XRD spectrum using the out-of-plane method. In Figure 30, the upper section shows the measurements for a sample where the substrate temperature during film formation was 170°C. As a result, the middle section shows the measurement results for a sample where the substrate temperature during film deposition was 130°C, and the bottom section shows the film deposition results. The measurement results for the sample under substrate temperature conditions RT are shown. The left column also shows the oxygen gas Measurement results for samples with a flow rate ratio of 10%, the central column shows the oxygen gas flow rate ratio conditions. The measurement results for 30% of the samples are shown in the right column, where the oxygen gas flow rate ratio conditions are the same as for the 100% sample. The measurement results are shown.

[0232] The XRD spectrum shown in Figure 30 indicates that increasing the substrate temperature during film deposition, or the acidity during film deposition, may affect the outcome. Increasing the ratio of the primary gas flow rate increases the peak intensity around 2θ = 31°. Oh, the peak around 2θ=31° is oriented along the c-axis with respect to the direction approximately perpendicular to the surface being formed or the upper surface. A crystalline IGZO compound (CAAC(c-axis aligned crystal)) It is known to originate from the fact that it is (line)-IGZO.

[0233] Furthermore, the XRD spectrum shown in Figure 30 indicates that the substrate temperature during film deposition was low, or that oxygen gas was present. The smaller the flow rate ratio, the less pronounced the peak. Therefore, when the substrate temperature during film deposition is low, Alternatively, for samples with a small oxygen gas flow rate ratio, the measurement area is measured in the ab-plane direction and the c-axis direction. It becomes clear that the direction cannot be seen.

[0234] ≪Analysis using an electron microscope≫ This section describes samples prepared with a substrate temperature RT during film deposition and an oxygen gas flow rate ratio of 10%. HAADF (High-Angle Annular Dark Field)-S TEM(Scanning Transmission Electron Micro The results of observation and analysis using the scope (hereinafter referred to as HAADF-) will be explained below. Images acquired by STEM are also called TEM images.

[0235] Planar images acquired by HAADF-STEM (hereinafter also referred to as planar TEM images), This section explains the results of image analysis performed on cross-sectional images (hereinafter also referred to as cross-sectional TEM images). The TEM images were observed using spherical aberration correction. (Note: HAADF-STEM) For image capture, we used the JEM-ARM200F atomic resolution analytical electron microscope manufactured by JEOL Ltd. The procedure involved irradiating the sample with an electron beam having an acceleration voltage of 200kV and a beam diameter of approximately 0.1nmφ.

[0236] Figure 31(A) shows the results obtained when the substrate temperature RT and oxygen gas flow rate ratio 10% were used during film deposition. This is a planar TEM image of the sample. Figure 31(B) shows the substrate temperature RT and oxygen gas during film deposition. This is a cross-sectional TEM image of a sample prepared with a flow rate ratio of 10%.

[0237] Analysis of electron diffraction patterns This section describes samples prepared with a substrate temperature RT during film deposition and an oxygen gas flow rate ratio of 10%. By irradiating it with an electron beam (also called a nanobeam electron beam) with a probe diameter of 1 nm, We will now explain the results obtained from acquiring the sub-ray diffraction patterns.

[0238] The film was fabricated using the substrate temperature RT and oxygen gas flow rate ratio of 10% shown in Figure 31(A). In the planar TEM image of the sample, black spots a1, a2, a3, a4, and black Observe the electron diffraction pattern indicated by point a5. Note that the observation of the electron diffraction pattern is performed by electron Perform the operation while illuminating the line, moving it at a constant speed from the 0-second position to the 35-second position. The result for point a1 is shown in Figure 31(C), the result for sunpoint a2 is shown in Figure 31(D), and the result for sunpoint a3 is shown in Figure 31. (E) The results for sunspot a4 are shown in Figure 31(F), and the results for sunspot a5 are shown in Figure 31(G).

[0239] From Figures 31(C), 31(D), 31(E), 31(F), and 31(G) A region of high brightness can be observed in a circular (ring-shaped) pattern. Multiple spots can be observed.

[0240] Furthermore, as shown in Figure 31(B), the substrate temperature RT during film formation and the oxygen gas flow rate ratio of 10% In the cross-sectional TEM image of the sample prepared by [method], black dots b1, b2, b3, b4, and Observe the electron diffraction pattern shown by sunspot b5. The result for sunspot b1 is shown in Figure 31(H), black The result for point b2 is shown in Figure 31(I), the result for sunspot b3 is shown in Figure 31(J), and the result for sunspot b4 is shown in Figure 31. The results for (K) and sunspot b5 are shown in Figure 31(L).

[0241] From Figures 31(H), 31(I), 31(J), 31(K), and 31(L) A ring-shaped area of ​​high brightness can be observed. In addition, multiple spots can be observed within the ring-shaped area. It can be measured.

[0242] Here, for example, with respect to CAAC-OS having InGaZnO4 crystals, the sample surface is flat When an electron beam with a probe diameter of 300 nm is incident on the row, the (00) of the InGaZnO4 crystal 9) A diffraction pattern containing spots originating from the plane is observed. In other words, CAAC-OS It is found that it has c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the surface to be formed or the upper surface. On the other hand, when an electron beam with a probe diameter of 300 nm is incident on the same sample perpendicular to the sample surface... When this is done, a ring-shaped diffraction pattern is observed. In other words, CAAC-OS is a-axis and It can be seen that the b-axis does not have any orientation.

[0243] Furthermore, nanocrystalline oxide semiconductors semiconductor. (Hereinafter referred to as nc-OS.) with a larger probe diameter When electron diffraction is performed using an electron beam (for example, 50 nm or more), a halo pattern can be observed. Diffraction patterns are observed. Also, for nc-OS, a small probe diameter electron beam (for example) When nanobeam electron diffraction is performed using a beam of less than 50 nm, bright spots are observed. Furthermore, when nanobeam electron diffraction is performed on nc-OS, it forms a circular pattern (ring shape). In some cases, areas of high brightness may be observed. Furthermore, multiple bright spots may be observed within a ring-shaped region. It may be measured.

[0244] Electron diffraction of samples prepared with substrate temperature RT and oxygen gas flow rate ratio of 10% during film deposition. The pattern has a ring-shaped area of ​​high brightness, and multiple bright spots within that ring-shaped area. Samples prepared with a substrate temperature RT during film deposition and an oxygen gas flow rate ratio of 10% showed the following electron beam activity: The folding pattern is nc-OS, and there is no orientation in the planar and cross-sectional directions. stomach.

[0245] Based on the above, oxide semiconductors with a low substrate temperature during film formation or a small oxygen gas flow rate ratio are It is clearly different from both amorphous oxide semiconductor films and single-crystal oxide semiconductor films. It can be presumed that it possesses such properties.

[0246] ≪Elemental analysis≫ This section discusses energy-dispersive X-ray spectroscopy (EDX). Using X-ray spectroscopy, EDX mapping is obtained and evaluated. By performing this evaluation, the film was fabricated at a substrate temperature RT during deposition and an oxygen gas flow rate ratio of 10%. The results of the elemental analysis of the sample are described below. Note that the EDX measurement was performed using an elemental analyzer. The JED-2300T energy-dispersive X-ray analyzer manufactured by JEOL Ltd. will be used. A Si drift detector is used to detect the X-rays emitted from the sample.

[0247] In EDX measurement, electron beam irradiation is performed on each point in the analyte region of the sample, and this generates The energy and number of characteristic X-rays emitted from the sample were measured, and the corresponding EDX spectrum was obtained for each point. In this embodiment, the peaks of the EDX spectrum at each point are determined by the electron transition of the In atom to the L shell. Electronic transitions, including electron transitions of Ga atoms to the K shell, electron transitions of Zn atoms to the K shell, and electron transitions of O atoms to the K shell. The data is attributed to the child transitions, and the ratio of each atom at each point is calculated. This is then used as the analysis target for the sample. By performing this operation on the morphological region, we obtain an EDX mapping that shows the distribution of the ratios of each atom. It is possible.

[0248] Figure 32 shows samples prepared with a substrate temperature RT and an oxygen gas flow rate ratio of 10% during film deposition. Figure 32(A) shows the EDX mapping in the cross-section. (The ratio of Ga atoms to total atoms is in the range of 1.18 to 18.64 [atomic%]) Figure 32(B) shows the EDX mapping of In atoms (In atoms relative to all atoms). The ratio of offspring is in the range of 9.28 to 33.74 [atomic%]. (Figure 32) (C) shows the EDX mapping of Zn atoms (the ratio of Zn atoms to all atoms is 6.69 to The range is 24.99 [atomic%]. Also, Figure 32(A), Figure 32( Figures B) and 32(C) show the substrate temperature RT and oxygen gas flow rate ratio of 10% during film deposition. The cross-section of the sample prepared by shows the same range. Note that EDX mapping is Within the range, the more elements measured, the brighter the image becomes, and the fewer elements measured, the dimmer the image becomes. The light and dark areas indicate the proportion of elements. Also, the magnification of the EDX mapping shown in Figure 32 is 720. It's ten thousand times more.

[0249] In the EDX mapping shown in Figures 32(A), 32(B), and 32(C), the image A relative distribution of light and dark is observed, and the substrate temperature RT and oxygen gas flow rate ratio 10 during film deposition are also observed. In the sample prepared using %, it can be observed that each atom is distributed in a specific way. Then, the areas enclosed by solid lines and dashed lines shown in Figures 32(A), 32(B), and 32(C) Focus on the range.

[0250] In Figure 32(A), the area enclosed by the solid line contains a relatively large number of dark areas, while the area enclosed by the dashed line... This includes a relatively large number of bright areas. Also, in Figure 32(B), the area enclosed by the solid line is relatively The area enclosed by the dashed line contains many bright regions, while the area enclosed by the dashed line contains relatively many dark regions.

[0251] In other words, the area enclosed by the solid line is a region with a relatively high concentration of In atoms, and the area enclosed by the dashed line is a region with a relatively high concentration of In atoms. This is a region with relatively few atoms. Here, in Figure 32(C), in the area enclosed by the solid line The right side is a relatively bright area, and the left side is a relatively dark area. Therefore, it is enclosed by a solid line. The range is, In X2 Zn Y2 O Z2 , or InO X1 These are the regions whose main components are these elements.

[0252] Furthermore, the area enclosed by the solid line is a region with relatively few Ga atoms, and the area enclosed by the dashed line is a region with Ga This is a region with a relatively high concentration of atoms. In Figure 32(C), the area enclosed by the dashed line is the upper left region. The area is relatively bright, while the area in the lower right is relatively dark. Therefore, The area enclosed by the dashed line is GaO X3 , or Ga X4 Zn Y4 O Z4 These are the main components of the region. That is the case.

[0253] Furthermore, from Figures 32(A), 32(B), and 32(C), the distribution of In atoms is G It is distributed more uniformly than a atoms, in InO X1 The region in which is the main component is In X 2Zn Y2 O Z2 It appears that these regions are interconnected and formed through areas where they are the main component. In this way, X2 Zn Y2 O Z2 , or InO X1 The region in which is the main component is It is formed in a cloud-like, spread-out manner.

[0254] Thus, GaO X3 The region in which is the main component, and In X2 Zn Y2 O Z2 , or In O X1 In-Ga-Zn acid has a structure in which regions with a main component are unevenly distributed and mixed. The monster can be referred to as CAC-OS.

[0255] Furthermore, the crystal structure of CAC-OS has an nc structure. The c structure is a single crystal, polycrystalline, or CAAC structure found in electron diffraction patterns of IGZO. In addition to the bright spots caused by [the aforementioned factor], there are several other bright spots. In addition to several bright spots, ring-shaped regions of high brightness appear, indicating that the crystal is a crystal. The structure is defined.

[0256] Furthermore, from Figures 32(A), 32(B), and 32(C), GaO X3 It is the main component. In a certain area, and In X2 Zn Y2 O Z2 , or InO X1The size of the region where it is the main component is observed to be 0.5 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less. Preferably in EDX mapping, the diameter of the region where each element is the main component is 1 nm or more and 2 nm or less.

[0257] Furthermore, CAC-OS has a structure different from that of the IGZO compound in which metal elements are uniformly distributed and has properties different from those of the IGZO compound. That is, CAC-OS is composed of a region where GaO X3 is the main component and a region where In is the main component, or a region where InO X2 Zn Y2 O Z2 is the main component, or a region where InO X1 is the main component, and they are phase-separated from each other, and the regions with each element as the main component have a mosaic structure. Here, the region where In <unk>0001798<unk><unk>0001799<unk>Zn X2 is the main component, or the region where InO Y2 O Z2 is the main component, or the region where InO X1 is the main component is a region with higher conductivity compared to the region where GaO X is the main component. That is, when carriers flow through the region where In X2 Zn<00018<>01> Y2 O Z2 is the main component, or the region where InO X1 is the main component, the conductivity as an oxide semiconductor is exhibited. Therefore, when the region where In Zn X2 is the main component, or the region where InO Y2 O Z2 is the main component, or the region where InO X1 is the main component is distributed in a cloud shape in the oxide semiconductor, a high field-effect mobility (μ) can be realized.

[0259] On the other hand, the region where GaO X3 is the main component, etc., is the region where In X2 Zn Y2 OZ2 or InO X1 is a region with high insulation compared to the region where it is the main component. That is, GaO X3 etc. By distributing the region where it is the main component in the oxide semiconductor, the leakage current can be suppressed, and a good switching operation can be realized.

[0260] Therefore, when CAC-OS is used in a semiconductor device, the insulation property caused by GaO X3 etc. and , In X2 Zn Y2 O Z2 or InO X1 The conductivity caused by it act complementarily to achieve a high on-current (I on ), and a high field-effect mobility (μ). can be achieved.

[0261] Also, the semiconductor device using CAC-OS has high reliability. Therefore, CAC-OS is suitable for various semiconductor devices including displays.

[0262] Or, it is preferable to use silicon for the semiconductor in which the channel of the transistor is formed. Although amorphous silicon may be used as silicon, it is particularly preferable to use crystalline silicon. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single-crystalline silicon, etc. In particular, polycrystalline silicon can be formed at a lower temperature compared to single-crystalline silicon, and has a higher field-effect mobility and higher reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixel, the aperture ratio of the pixel can be improved. Also, even when the pixel has extremely high definition, the gate drive circuit and the source drive circuit ​This makes it possible to form the paths on the same substrate as the pixels, reducing the number of components that make up electronic devices. It is possible.

[0263] The bottom-gate transistor exemplified in this embodiment can reduce the manufacturing process. It is preferable. Also, by using amorphous silicon in this case, it is preferable to using polycrystalline silicon. Because it can be formed at low temperatures, it can be used as a material for wiring and electrodes in layers below the semiconductor layer, and as a substrate material, and is resistant to Because it is possible to use materials with low heat properties, the range of material choices can be broadened. For example This allows for the use of extremely large-area glass substrates, etc. On the other hand, top gate type Because transistors tend to form impurity regions in a self-aligning manner, variations in characteristics can occur. This is preferable because it can reduce the amount of silicon used. In particular, polycrystalline silicon and monocrystalline silicon are preferable. This is suitable when using this method.

[0264] [Conductive layer] In addition to the gate, source, and drain of a transistor, various wiring components make up a display device. Materials that can be used for conductive layers such as electrodes include aluminum, titanium, and chromium. Molybdenum, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten. Examples include metals such as sten, or alloys in which these are the main component. The film containing the material can be used as a single layer or as a multilayer structure. For example, silicon A single-layer structure containing an aluminum film, a double-layer structure in which an aluminum film is laminated on a titanium film, and tan A two-layer structure consisting of an aluminum film laminated on a gusten film, and a copper-magnesium-aluminum alloy. A two-layer structure with a copper film laminated on a gold film, a two-layer structure with a copper film laminated on a titanium film, tungsten A two-layer structure with a copper film laminated on top of a film, a titanium film or titanium nitride film, and an aluminum film layered on top of that. A three-layer structure is formed by laminating a titanium film or copper film, and then forming a titanium film or titanium nitride film on top of it. A layered structure, a molybdenum film or a molybdenum nitride film, with an aluminum film or layered on top thereof. A three-layer structure in which copper films are stacked, and then a molybdenum film or molybdenum nitride film is formed on top of them. These include, for example. Furthermore, oxides such as indium oxide, tin oxide, or zinc oxide may also be used. Furthermore, using copper containing manganese is preferable because it improves the controllability of the shape through etching. .

[0265] Furthermore, examples of conductive materials that are translucent include indium oxide, indium tin oxide, and Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide with added gallium or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, and t Examples include sten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metal materials or alloy materials containing such metal materials can be used. Alternatively, the nitrogen of the metal material can be used. Metallic compounds (e.g., titanium nitride) may also be used. When using these nitrides, they should be thinned to a degree that allows light to pass through. A laminated film of materials can be used as a conductive layer. For example, an alloy of silver and magnesium and an ink Using a multilayer film of tungsten oxide is preferable because it can improve conductivity. These include conductive layers such as various wirings and electrodes that constitute the display device, and conductive elements of the display element. It can also be used as an electrochemical layer (a conductive layer that functions as a pixel electrode or common electrode).

[0266] [Insulating layer] Examples of insulating materials that can be used for each insulating layer include acrylic, epoxy, etc. In addition to resins and resins containing siloxane bonds, silicon oxide, silicon oxide nitride, and silicon nitride oxide are also used. Inorganic insulating materials such as silicon nitride and aluminum oxide can also be used.

[0267] Furthermore, it is preferable that the light-emitting element is provided between a pair of insulating films with low water permeability. This prevents impurities such as water from entering the light-emitting elements, thus suppressing a decrease in the reliability of the device. It can be controlled.

[0268] Examples of insulating films with low water permeability include silicon nitride films and silicon nitride oxide films, which contain nitrogen and silicon. Examples include films containing nitrogen and aluminum, such as aluminum nitride films. Silicon oxide films, silicon oxide nitride films, aluminum oxide films, etc., may also be used.

[0269] For example, the amount of water vapor transmitted through a low-permeability insulating film is 1 × 10⁻⁶ -5 [g / (m 2 ·day) ] Preferably 1 × 10 -6 [g / (m 2 ·day)] Below, more preferably 1×1 0 -7 [g / (m 2 (day) More preferably 1 x 10 -8 [g / (m 2 ·d (ay) and below.

[0270] [Light-emitting element] As the light-emitting element, a self-emitting element can be used, and it will light up when current or voltage is applied. This category includes elements whose degree of control is managed. For example, light-emitting diodes (LEDs), organic EL elements, inorganic EL elements, etc., can be used.

[0271] Light-emitting devices include top-emission type, bottom-emission type, and dual-emission type. Either of the above is acceptable. The electrode that extracts light uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light. stomach.

[0272] The EL layer has at least an emissive layer. The EL layer has layers other than the emissive layer, such as hole injection layers. High-performance materials, materials with high hole transport, hole-blocking materials, materials with high electron transport, electron injection This includes substances with high electron transport and hole transport properties, or bipolar substances (substances with high electron transport and hole transport properties), etc. It may have further layers.

[0273] The EL layer can use either low-molecular-weight compounds or high-molecular-weight compounds, and inorganic compounds It may contain materials. Each layer constituting the EL layer is made by a vapor deposition method (including vacuum deposition). It can be formed by methods such as transfer, printing, inkjet, and coating.

[0274] When a voltage higher than the threshold voltage of the light-emitting element is applied between the cathode and anode, the EL layer on the anode side... Holes are injected from the cathode side, and electrons are injected from the cathode side. The injected electrons and holes are in the EL layer. They recombine, and the light-emitting material contained in the EL layer emits light.

[0275] When using a white light-emitting element as the light-emitting element, two or more types of light-emitting elements are used in the EL layer. It is preferable to have a composition that includes substances. For example, the emission of light from two or more light-emitting substances is related to the complementary color White light emission can be obtained by selecting a light-emitting material that acts in conjunction with the light-emitting material. For example, These are light-emitting substances that exhibit light emission in the following colors: R (red), G (green), B (blue), Y (yellow), O (orange), etc. Or, among luminescent materials that exhibit emission containing two or more spectral components of R, G, and B, It is preferable that it contains 2 or more. Also, the spectrum of emission from the light-emitting element is in the visible light region. A light-emitting element having two or more peaks within a wavelength range (e.g., 350 nm to 750 nm) is suitable. It is preferable to use it. Also, the emission spectrum of a material having a peak in the yellow wavelength region is Preferably, the material has spectral components in the green and red wavelength regions.

[0276] The EL layer includes an emissive layer containing an emissive material that emits one color, and an emissive material that emits another color. It is preferable to have a structure in which multiple light-emitting layers are stacked. For example, multiple light-emitting layers in the EL layer The layers may be stacked in contact with each other, or they may be separated by regions that do not contain any light-emitting material. They may be laminated. For example, between the fluorescent emitting layer and the phosphorescent emitting layer, the fluorescent emitting layer or It contains the same material as the phosphorescent layer (e.g., host material, assist material), and either emission The configuration may also include a region that does not contain any optical material. This makes it easier to fabricate the light-emitting element. This also results in a reduction in the drive voltage.

[0277] Furthermore, the light-emitting element may be a single element having one EL layer, or it may have multiple EL layers These may be tandem elements stacked with charge generation layers in between.

[0278] Examples of conductive films that transmit visible light include indium oxide, indium tin oxide, and indium It can be formed using zinc oxide, zinc oxide, or zinc oxide with added gallium. Also, gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum Metal materials such as iron, cobalt, copper, palladium, or titanium, and materials containing these metal materials. Alloys, or nitrides of these metallic materials (e.g., titanium nitride), etc., are also translucent to a certain extent. It can be used by forming it into a thin layer. Furthermore, the laminated film of the above material can be used as a conductive layer. This is possible. For example, by using a multilayer film of a silver-magnesium alloy and indium tin oxide. It is preferable to include this because it can improve conductivity. Alternatively, graphene or the like may be used. .

[0279] Conductive films that reflect visible light include, for example, aluminum, gold, platinum, silver, nickel, and tungsten. Metal materials such as stainless steel, chromium, molybdenum, iron, cobalt, copper, or palladium, Alloys containing these metal materials can be used. In addition, the above metal materials and alloys can be treated with ran It may also contain additives such as tungsten, neodymium, or germanium. Additionally, titanium and nickel may be added. Alternatively, an alloy containing neodymium and aluminum (aluminum alloy) may be used. An alloy containing copper, palladium, magnesium, and silver may also be used. An alloy containing silver and copper is Furthermore, it is preferable because it has high heat resistance. By laminating a metal film or metal oxide film, oxidation can be suppressed. Examples of materials for metal films and metal oxide films include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated together. For example, silver and an ink Multilayer films of zinc-tin oxide, multilayer films of silver-magnesium alloy and indium-tin oxide, etc. It can be used.

[0280] The electrodes can be formed using methods such as vapor deposition or sputtering. Shapes are formed using ejection methods such as inkjet, printing methods such as screen printing, or plating methods. It is possible.

[0281] Furthermore, the above-mentioned light-emitting layer, as well as materials with high hole injection potential, materials with high hole transport potential, and electricity Layers containing materials with high electron transport properties, materials with high electron injection properties, bipolar materials, etc. These include inorganic compounds such as quantum dots, and polymer compounds (oligomers, dendrimers, poly It may have (such as a mer). For example, by using quantum dots as the light-emitting layer, the light-emitting material and It can also be made to function in that way.

[0282] Furthermore, quantum dot materials include colloidal quantum dot materials, alloy-type quantum dot materials, Core-shell type quantum dot materials, core-type quantum dot materials, etc., can be used. Materials containing elemental groups 12 and 16, 13 and 15, or 14 and 16 May be used. Alternatively, cadmium, selenium, zinc, sulfur, phosphorus, indium, tellurium, Quantum dot materials containing elements such as lead, gallium, arsenic, and aluminum may also be used.

[0283] [Liquid crystal element] Examples of liquid crystal elements include vertical alignment (VA). Liquid crystal elements to which the mode is applied can be used. As for the vertical alignment mode, MVA( Multi-Domain Vertical Alignment) mode, PVA Patterned Vertical Alignment) mode, ASV (Adv Features such as the (anced Super View) mode can be used.

[0284] Furthermore, liquid crystal elements with various modes applied can be used. For example, In addition to VA mode, there are also TN (Twisted Nematic) mode and IPS (In-Plant Nematic) mode. -Plane-Switching) mode, FFS (Fringe Field Switch) itching) mode, ASM(Axially Symmetric aligne) d Micro-cell) mode, OCB (Optically Compensated) (ed Birefringence) mode, FLC (Ferroelectric L iquix Crystal mode, AFLC (AntiFerroelectric) Liquid crystal elements with modes such as Liquid Crystal applied can be used. .

[0285] Furthermore, liquid crystal elements control the transmission or non-transmission of light through the optical modulation effect of liquid crystals. It is a child. Furthermore, the optical modulation effect of liquid crystals is due to the electric field acting on the liquid crystal (horizontal electric field, vertical electric field) It is controlled by an electric field (including an electric field in an oblique direction). Note that the liquid crystal used in the liquid crystal element is For example, thermotropic liquid crystals, low molecular weight liquid crystals, polymer liquid crystals, polymer dispersed liquid crystals (PDLCs): Polymer Dispersed Liquid Crystal (Ferroelectric Liquid Crystal) Antiferroelectric liquid crystals can be used. Depending on the conditions, these liquid crystal materials can be cholesterol-free. It exhibits phases such as the Lick phase, smectic phase, cubic phase, chiral nematic phase, and isotropic phase.

[0286] Furthermore, either positive-type or negative-type liquid crystals may be used as the liquid crystal material. The optimal liquid crystal material should be used depending on the mode and design to be applied.

[0287] Furthermore, an alignment film can be provided to control the orientation of the liquid crystal. If adopted, a liquid crystal exhibiting a blue phase without an alignment layer may be used. The blue phase is the liquid crystal phase. One such example is when a cholesteric liquid crystal is heated, and it transitions from the cholesteric phase to the isotropic phase. This phase appears just before transfer. The blue phase only appears within a narrow temperature range. To improve the properties, a liquid crystal composition containing several weight percent or more of a chiral agent is used in the liquid crystal layer. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and optical isotropy. It is a property. Furthermore, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent is an alignment treatment. It is essential and has low viewing angle dependence. Also, since an alignment layer is not required, rubbing treatment is not necessary. As this is essential, it can prevent electrostatic discharge damage caused by rubbing, and This can reduce defects and damage to liquid crystal display devices during the manufacturing process.

[0288] Furthermore, the liquid crystal elements include transmissive liquid crystal elements, reflective liquid crystal elements, or semi-transmissive liquid crystal elements. Elements and the like can be used.

[0289] When using transmissive or semi-transmissive liquid crystal elements, two polarizing elements are placed so as to sandwich a pair of substrates. A plate is provided. Furthermore, a backlight is provided outside the polarizing plate. As for the backlight, It can be a direct-lit backlight or an edge-lit backlight. Direct-lit backlight equipped with LED (Light Emitting Diode). Using this method makes local dimming easier and allows you to increase contrast. It is preferable. Also, if edge-lit backlights are used, the touch including the backlight This is preferable because it allows for a reduction in the thickness of the panel module.

[0290] When using reflective liquid crystal elements, a polarizing plate is provided on the display surface side. In addition, Placing a light diffuser on the display side is preferable because it improves visibility.

[0291] [Adhesive layer] The adhesive layer can be a photocuring adhesive such as an UV-curing type, a reaction-curing adhesive, or a thermosetting adhesive. Various types of curing adhesives, such as anaerobic adhesives, can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imi Plastic resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, E Examples include VA (ethylene vinyl acetate) resin. In particular, the moisture permeability of epoxy resins, etc. Materials with low properties are preferred. A two-part resin mixture may also be used. Furthermore, adhesive sheets, etc. You may use it.

[0292] Furthermore, the above resin may contain a desiccant. For example, an alkaline earth metal oxide (acid Using substances that adsorb moisture by chemical adsorption, such as calcium carbonate or barium oxide. It is possible to remove moisture through physical adsorption, such as with zeolite or silica gel. Adsorbent substances may be used. If a desiccant is included, impurities such as moisture may enter the element. This is preferable because it can suppress the process and improve the reliability of the display panel.

[0293] Furthermore, by mixing a filler or light scattering material with a high refractive index into the above resin, light can be extracted. This can improve efficiency. For example, titanium dioxide, barium oxide, zeolite, and Aquatic plants such as ruconium can be used.

[0294] [Connection layer] As a connecting layer, an anisotropic conductive film (ACF) is used. (Active Film) and anisotropic conductive paste (ACP: Anisotropic C) You can use inductive pastels, etc.

[0295] [Colored layer] Materials that can be used for the colored layer include metal materials, resin materials, pigments, or dyes. Examples include resin materials.

[0296] [Light blocking layer] Materials that can be used as a light-shielding layer include carbon black, metals, and metal oxides. Examples include composite oxides containing solid solutions of multiple metal oxides. In addition, a colored layer is added to the light-shielding layer. A laminated film containing the material can also be used. For example, a colored layer that transmits light of a certain color A laminated structure consisting of a film containing the material to be used and a film containing the material to be used for the colored layer that transmits light of other colors. This can be used. By using the same materials for the colored layer and the light-shielding layer, the equipment can be standardized. This is preferable because it allows for the simplification of other processes.

[0297] The above is a description of each component.

[0298] [Configuration Example 2] In the following, as an example of a display device according to one aspect of the present invention, an input / output device (touch panel), input This section describes an example configuration of a device (touch sensor), etc.

[0299] Here, in this specification, a display panel, which is one embodiment of a display device, displays an image or the like on its display surface. It has a display (output) function. Therefore, the display panel is one form of an output device. be.

[0300] Furthermore, in this specification, the substrate of the display panel may be, for example, FPC (Flexible Printed Circuit). (inted Circuit) or TCP (Tape Carrier Packa A connector such as a ge is attached, or the circuit board has a COG (Chip On A display panel module is a device on which an IC (integrated circuit) is mounted using methods such as glass. It may also be called a display module, or simply a display panel.

[0301] Furthermore, in this specification, etc., a touch sensor is defined as a sensor that is touched by an object to be detected, such as a finger or stylus. Or it has the function of detecting proximity. Therefore, the touch sensor is an input This is one aspect of the apparatus.

[0302] Furthermore, in this specification, etc., a substrate having a touch sensor is referred to as a touch sensor panel, or a single It is sometimes referred to as a touch sensor. Also, in this specification, the base of the touch sensor panel A board with connectors such as FPC or TCP attached, or a circuit board. A touch sensor panel module is a device on which an IC is mounted using the COG method or similar. It may be called a sensor module, a touch sensor, or simply a touch sensor.

[0303] In this specification, a touch panel, which is one form of a display device, displays images, etc. on its display surface. The function of displaying (outputting) information, and the detection of a finger, stylus, or other object touching or coming close to the display surface. It has the function of a touch sensor that detects when it does so. Therefore, the touch panel This is one form of an input / output device.

[0304] A touch panel is, for example, a display panel (or display device) with a touch sensor. It can also be called a display panel (or display device) with a built-in support function.

[0305] A touch panel can also be configured to include a display panel and a touch sensor panel. Alternatively, the display panel can be configured to have a touch sensor function built into it. ru.

[0306] Furthermore, in this specification, etc., the touch panel substrate may include, for example, FPC or TCP. Products with a connector attached, or ICs mounted on a circuit board using the COG method, etc. When referring to it as a touch panel module, display module, or simply a touch panel, There is.

[0307] [Example of touch sensor configuration] The following describes an example configuration of an input device (touch sensor) with reference to the diagrams.

[0308] Figure 11(A) shows a schematic top view of the input device 150. The input device 150 is located on the circuit board 160. It has multiple electrodes 151, multiple electrodes 152, multiple wires 155, and multiple wires 156 on top. Furthermore, the substrate 160 is electrically connected to each of the multiple electrodes 151 and the multiple electrodes 152. A Flexible Printed Circuit (FPC) 157 is provided. Also, Figure 11(A) shows an example where IC158 is provided on FPC157. Yes, they are.

[0309] Figure 11(B) shows a magnified view of the area enclosed by the dashed line in Figure 11(A). Electrode 151 It has a shape in which multiple rhombus-shaped electrode patterns are connected in the horizontal direction of the paper. The diamond-shaped electrode patterns are each electrically connected. Similarly, electrode 152 is also electrically connected. Multiple rhombus-shaped electrode patterns are arranged in a line along the vertical direction of the paper, with the rhombus-shaped electrodes lined up in a row. Each electrode pattern is electrically connected. Also, electrode 151 and electrode 152 are Some of these overlap and intersect with each other. At this intersection, electrode 151 and electrode 152 and An insulator is sandwiched in between to prevent an electrical short circuit.

[0310] Furthermore, as shown in Figure 11(C), multiple rhomboid-shaped electrodes 152 form a bridge. The configuration may also be connected by pole 153. The island-shaped electrodes 152 are arranged in a vertical direction. The two adjacent electrodes 152 are electrically connected by a bridge electrode 153. By using this configuration, electrodes 151 and 152 can be processed from the same conductive film. They can be formed simultaneously. Therefore, variations in these film thicknesses can be suppressed. Furthermore, it is possible to suppress variations in the resistance and light transmittance of each electrode depending on the location. Here, electrode 152 is configured to have a bridge electrode 153, but electrode 151 is configured in this way An eel-based composition would also be fine.

[0311] Furthermore, as shown in Figure 11(D), the electrodes 151 and 152 shown in Figure 11(B) Alternatively, the inside of the rhombus-shaped electrode pattern may be hollowed out, leaving only the outline. In this case, when the width of electrodes 151 and 152 is so narrow that it is not visible to the user. As described later, electrodes 151 and 152 use light-shielding materials such as metals or alloys. Alternatively, the electrode 151 or electrode 152 shown in Figure 11(D) may be the bridge electrode 1. A configuration having 53 is also possible.

[0312] One electrode 151 is electrically connected to one wire 155. Also, one electrode 15 2 is electrically connected to one wire 156. Here, electrodes 151 and 152 Either one corresponds to row wiring, and the other corresponds to column wiring.

[0313] IC158 has the function of driving the touch sensor. Signal output from IC158 This is supplied to either electrode 151 or electrode 152 via wiring 155 or wiring 156. It is done. Also, the current (or potential) flowing through either electrode 151 or electrode 152 is distributed The input is provided to IC158 via line 155 or wiring 156.

[0314] In this case, when the input device 150 is superimposed on the display surface of the display panel to form a touch panel. In this case, it is preferable to use a light-transmitting conductive material for electrodes 151 and 152. Furthermore, electrodes 151 and 152 are made of a light-transmitting conductive material, and light from the display panel is electrically charged When extraction is performed via electrode 151 or electrode 152, between electrode 151 and electrode 152 It is preferable to arrange a conductive film containing the same conductive material as a dummy pattern. To that end, a portion of the gap between electrode 151 and electrode 152 is filled with a dummy pattern. This reduces variations in light transmittance. As a result, the brightness of the light transmitted through the input device 150 is reduced. This can reduce unevenness in temperature.

[0315] Examples of light-transmitting conductive materials include indium oxide, indium tin oxide, and indium Conductive oxides such as zinc oxide, zinc oxide, and zinc oxide with added gallium are used. This can be done. Furthermore, a film containing graphene can also be used. Examples of films containing graphene include... For example, it can be formed by reducing a film containing graphene oxide that has been formed in a film-like structure. Methods for achieving this include applying heat.

[0316] Alternatively, a metal or alloy that is thin enough to be translucent can be used. For example, gold. Silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt Metals such as copper, palladium, or titanium, or alloys containing such metals, can be used. Alternatively, a nitride of the metal or alloy (for example, titanium nitride) may be used. Alternatively, a laminated film may be used in which two or more conductive films containing the materials described above are stacked.

[0317] Furthermore, electrodes 151 and 152 are processed to be so thin that they are not visible to the user. A conductive film may be used. For example, such a conductive film may be processed into a grid (mesh) shape. This allows for high conductivity and high visibility of the display device. At this time, the conductive film is 30 nm to 100 μm, preferably 50 nm to 50 μm, more preferably 50 nm It is preferable to have a portion with a width of m or more and 20 μm or less. In particular, patterns with a width of 10 μm or less A conductive film with a certain width is preferable because it is extremely difficult for the user to see.

[0318] As an example, Figures 12(A) to (D) show a magnified view of a portion of electrode 151 or electrode 152. A schematic diagram is shown. Figure 12(A) shows an example using a lattice-shaped conductive film 146. At this time, the conductive film 146 is arranged so as not to overlap with the display elements of the display device. This is preferable because it does not block light from the display device. In that case, the direction of the grid The orientation of the grid is the same as that of the array of display elements, and the period of the grid is an integer multiple of the period of the array of display elements. It is preferable to do so.

[0319] Furthermore, Figure 12(B) shows a lattice-shaped conductive film processed to form triangular openings. 147 examples are shown. With this configuration, compared to the case shown in Figure 12(A) This makes it possible to lower the overall resistance.

[0320] Furthermore, as shown in Figure 12(C), the conductive film 14 has a pattern shape that does not have periodicity. It may also be set to 8. With this configuration, when superimposed on the display unit of the display device, moiré patterns are reduced. This can prevent the occurrence of [the problem].

[0321] Furthermore, conductive nanowires may be used for electrodes 151 and 152. Figure 12(D The following shows an example using nanowire 149. By distributing them at an appropriate density so that they come into contact with each other, a two-dimensional network is formed. This allows it to function as a highly transparent conductive film. For example, the average diameter is 1 nm to 100 nm, preferably 5 nm to 50 nm, more preferably 5 nm Nanowires of 25 nm or less can be used. As for nanowire 149, Ag Nanowires, metal nanowires such as Cu nanowires and Al nanowires, or carbon Nanotubes and the like can be used. For example, in the case of Ag nanowires, the light transmittance is 89%. For a percentage above this, the sheet resistance can be set to between 40Ω / □ and 100Ω / □.

[0322] The above is an explanation of an example of a touch sensor configuration.

[0323] [Example of touch panel configuration] In the following section, as an example of a display device according to one aspect of the present invention, an example of the configuration of a touch panel is shown in Figure I will explain by referring to the page.

[0324] Figure 13(A) is a schematic perspective view of the touch panel 100. Figure 13(B) is a pair This is a schematic perspective view showing the separated substrate. For clarity, only representative components are shown. In addition, in Figure 13(B), only the outline of the substrate 31 is indicated by a dashed line.

[0325] The touch panel 100 has a circuit board 31 and a circuit board 21 on which an input device 150 is provided. These are arranged in layers. Regarding the configuration of the substrate 21, refer to the above configuration example 1, etc. It is possible.

[0326] The configuration of the input device 150 can be adapted from the example configuration of the touch sensor described above. Figure 13(A)(B) In this case, the input device 150 has multiple electrodes 151, multiple electrodes 152, multiple wirings 155, and multiple This shows the case where there are 156 wires.

[0327] For example, a capacitive touch sensor can be used as the input device 150. Methods include surface capacitance and projected capacitance. There are several types of systems, including self-capacity systems and mutual-capacity systems. Using a mutual-capacity system allows for simultaneous multi-capacity operation. This is preferable because it enables point detection. Below, a projected capacitive touch sensor is applied. Let's explain the case.

[0328] Furthermore, this is not limited to detecting the proximity or contact of an object to be detected, such as a finger or stylus. Various sensors capable of performing certain functions can also be applied to the input device 150.

[0329] The touch panel 100 shown in Figures 13(A) and 13(B) has an input device 150 provided on the circuit board 31. Furthermore, the wiring 155 and wiring 156 of the input device 150 are connected via the connection part 169. It is electrically connected to the FPC42 which is connected to the circuit board 21.

[0330] By using this configuration, the FPC connected to the touch panel 100 is located on one board side ( Here, it can only be placed on the circuit board 21 side. Also, there are two or more touch panels 100. It is also possible to use a configuration in which an FPC is attached, but as shown in Figures 13(A) and 13(B), touch panel The flannel 100 is provided with one FPC 42, and the FPC 42 is located on the substrate 21 side and the substrate 31 side By configuring it to supply signals to both, the number of components can be further reduced and the configuration can be simplified. preferable.

[0331] The connection portion 169 is configured to include, for example, a connector having anisotropic conductivity. This is possible. For example, conductive particles can be used as the connector. As for the child, particles such as organic resin or silica are coated with a metal material. This is possible. Using nickel or gold as the metallic material is preferable because it can reduce contact resistance. Furthermore, coating nickel with gold, or otherwise coating two or more metal materials in layers. It is preferable to use particles. Furthermore, a material that undergoes elastic or plastic deformation should be used as the connecting body. It is preferable that they be present. In this case, the conductive particles may be flattened in the vertical direction. This increases the contact area between the connector and the conductive layer to which it is electrically connected, thus reducing contact resistance. In addition to reducing resistance, it can also suppress the occurrence of malfunctions such as connection failures.

[0332] The connector is also covered by an adhesive layer 141 (not shown) that bonds substrates 21 and 31 together. It is preferable to arrange them in this way. For example, after applying a paste that will become the adhesive layer 141, The connecting material can be scattered onto the connecting portion 169. The connecting portion 169 is positioned in the area where the adhesive layer 141 is provided. By placing it there, the adhesive layer 141 is also placed on the display section 32 (also known as a solid sealing structure). In addition, for example, light-emitting devices with a hollow sealing structure, liquid crystal display devices, etc., the adhesive layer 141 is located around the periphery. The same can be applied to any configuration that uses it.

[0333] Furthermore, in Figures 13(A) and 13(B), unlike in Figure 1(A), IC168 is mounted on the FPC42. This shows an example of the case where IC168 has the function of driving the input device 150. Alternatively, the IC that drives the input device 150 may be mounted on board 21, board 31, or FPC. It may be provided separately in section 42, etc.

[0334] [Example of cross-sectional configuration] Next, we will explain an example of the cross-sectional configuration of the touch panel 100. Figure 14 shows the touch panel This is a schematic cross-sectional view of the 100. Figure 14 shows that the substrate 31 is larger than the adhesive layer 141, compared to Figure 9. The main difference lies in the configuration of the sides.

[0335] On the surface of substrate 31 facing substrate 21, insulating layer 161, insulating layer 162, insulating layer 163, insulating layer Layers 164 and others are arranged in a laminated manner. Between insulating layer 161 and insulating layer 162 is a light-shielding layer 133. A structure is provided. Between the insulating layer 162 and the insulating layer 163, electrodes 151, 152, etc. are provided. A bridge electrode 153 is provided between insulating layer 163 and insulating layer 164. The surface of the insulating layer 164 facing the adhesive layer 141 has a colored layer 131a, a colored layer 131b, and a light-shielding layer. 132 etc. are provided.

[0336] Figure 14 clearly shows the intersection of electrodes 151 and 152. The bridge electrode 153 is Through the opening provided in the insulating layer 163, the two electrodes 151 sandwiching electrode 152 are electrically connected. Connected.

[0337] Electrodes 151 and 152 are positioned to overlap with the light-shielding layer 132. Also, see Figure 1. Figure 4 shows an example where the electrode 151 is positioned so as not to overlap with the light-emitting element 40. In other words, the electrode 151 has a mesh shape with an opening that overlaps with the light-emitting element 40. With this configuration, the electrode 151 is positioned on the path of the light emitted by the light-emitting element 40. Therefore, the placement of the electrode 151 does not result in any reduction in brightness, and visibility is high. Furthermore, a touch panel with reduced power consumption can be realized. The electrode 152 also has a similar structure. It can be considered a success.

[0338] Furthermore, since electrodes 151 and 152 do not overlap with the light-emitting element 40, relatively low resistance is applied to them. A transparent and conductive metal material can be used. Compared to using a different material, the sensitivity of the touch sensor can be improved.

[0339] Furthermore, in Figure 14, the substrate 3 is greater than electrodes 151 and 152 (and bridge electrode 153). The image shows an example where a light-shielding layer 133 is provided on side 1 in addition to these. Therefore, even when metal materials are used for electrodes 151, etc., these external light reflections can be suppressed. Therefore, a touch panel with higher visibility can be realized. Note that here, the light-shielding layer 132 and light-shielding An example was shown in which two light-shielding layers of layer 133 are provided, but a configuration in which only one of them is provided is also shown. That's good too.

[0340] Furthermore, without providing the polarizing plate 130 on the substrate 31, the substrate 31 can be examined by a finger or stylus. It may also be used as a substrate that comes into direct contact with the body. In this case, a protective layer (ceramic) is placed on the substrate 31. It is preferable to provide a protective layer (such as a coating). The protective layer may be, for example, silicon oxide or aluminum oxide. Using inorganic insulating materials such as yttrium oxide and yttria-stabilized zirconia (YSZ) This is possible. Furthermore, tempered glass may be used for the substrate 31. Tempered glass is ion exchange Physical or chemical treatments are applied to the surface through methods such as exchange or air-cooling strengthening, thereby creating compressive stress on the surface. The added components can be used. A touch sensor is placed on one side of the tempered glass, and on the opposite side. By placing this surface on the outermost surface of an electronic device and using it as a touch surface, the overall thickness of the device can be reduced. This can reduce the problem.

[0341] As shown in Figure 14, the light-emitting element 40, multiple transistors, and touch sensor are configured. By placing electrodes and the like between substrate 21 and substrate 31, the number of components is reduced. It is possible to achieve this.

[0342] The configuration of the touch panel 100 is not limited to this; for example, an input device 150 may be provided. The substrate can be stacked with, for example, the display device 10 shown in Figure 1(A) to form a touch panel. stomach.

[0343] Figure 15 shows the electrodes 151 and 152, etc., that constitute the touch sensor, on substrate 2 of substrate 31. This shows an example formed on the opposite side from side 1. Such a configuration is used in on-cell type touch panels. It can be called "Ru".

[0344] Electrodes 151 and 152 are formed on the substrate 31, and an insulating layer 163 covers them. It is provided. Furthermore, a bridge electrode 153 is provided on the insulating layer 163.

[0345] The substrate 170 is a substrate that functions as a touch surface, and can be used, for example, as a touch panel in an electronic device. It functions as part of the enclosure when installed, or as protective glass, etc. Circuit board 170 and circuit board 3 1 is bonded together by the adhesive layer 165.

[0346] Here, in Figure 15, not only the region where electrode 151 overlaps with light-shielding layer 132, but also the light-emitting element 4 This shows an example where the electrodes are also placed in a region that overlaps with the colored layer 131a, etc. For 151, a material that transmits visible light can be used. For example, a film containing a metal oxide or , a film containing graphene, or a thin film containing metal or alloy that transmits visible light, etc. It can be used for electrode 151. The same applies to electrode 152. The ridge electrode 153 may also be made of a similar visible light-transmitting material, but the bridge electrode 153 When the light-shielding layer 132 is placed in overlap with the bridge electrode 153, or when the area of ​​the bridge electrode 153 is extremely small In this case, materials that block visible light, such as metals or alloys, may be used.

[0347] The above is an explanation of an example of a cross-sectional configuration of a touch panel.

[0348] [Configuration Example 3] In the following, as an example of a display device according to one aspect of the present invention, a reflective liquid crystal element and both light-emitting elements are used. A display device (display panel) that has a method and can display in both transmission mode and reflection mode. Let's explain an example of a display panel. This type of display panel is called a TR-hybrid display. (Transmissive OLED and Reflective LC Hyb It can also be called a rid display.

[0349] One example of such a display panel is a liquid crystal element equipped with electrodes that reflect visible light, and One example is a configuration in which optical elements are stacked and arranged. In this case, the electrodes that reflect visible light are open. It is preferable that the opening and the light-emitting element are arranged in overlapping positions. In the transient mode, the aperture can be driven to emit light from the light-emitting element. Furthermore, the transistors that drive the liquid crystal elements and the transistors that constitute the light-emitting elements are It is preferable that they be arranged on the same plane. Furthermore, an insulating layer is provided between the light-emitting element and the liquid crystal element. It is preferable that the layers are stacked via an intermediary.

[0350] Such display panels are designed to display in reflective mode in bright outdoor locations. This allows for operation with extremely low power consumption. Also, in dark environments such as at night or indoors. In this case, displaying in transparency mode allows the image to be displayed with optimal brightness. Furthermore, by displaying in both transmission and reflection modes, the ambient light is extremely bright. Even in dimly lit locations, it consumes less power and offers higher contrast compared to conventional display panels. It is possible to display this information.

[0351] [Example Configuration] Figure 16(A) is a block diagram showing an example of the configuration of the display device 200. 0 has multiple pixels 210 arranged in a matrix on the display unit 32. Also, the display device 2 00 has circuit GD and circuit SD. Also has a plurality of pixels 210 arranged in direction R, and Multiple wires G1, multiple wires G2, multiple wires ANO, and are electrically connected to circuit GD. It has multiple wiring CSCOMs. It also has multiple pixels 210 arranged in direction C, and circuit SD. It has multiple wirings S1 and multiple wirings S2 that are electrically connected to it.

[0352] Pixel 210 has a reflective liquid crystal element and a light-emitting element. In pixel 210, the liquid crystal element The child and the light-emitting element have overlapping portions.

[0353] Figure 16(B1) shows an example of the configuration of the conductive layer 191 of the pixel 210. The conductive layer 191 is It functions as a reflective electrode for the liquid crystal element in pixel 210. Also, the conductive layer 191 has an aperture. 251 is provided.

[0354] In Figure 16(B1), the light-emitting element 40 located in the region overlapping with the conductive layer 191 is shown by a dashed line. The light-emitting element 40 is positioned in overlap with the opening 251 of the conductive layer 191. As a result, the light emitted by the light-emitting element 40 is emitted towards the display surface side through the aperture 251.

[0355] In Figure 16(B1), pixels 210 adjacent to each other in direction R are pixels corresponding to different colors. At this time, as shown in Figure 16(B1), in two pixels adjacent to each other in direction R, aperture 2 It is preferable that the 51s are located at different positions on the conductive layer 191 so that they are not arranged in a single line. This makes it possible to separate the two light-emitting elements 40, and the light emitted by the light-emitting elements 40 The phenomenon where light is incident on the colored layer of the adjacent pixel 210 (also called crosstalk) It can be suppressed. Also, two adjacent light-emitting elements 40 can be placed far apart. Therefore, even when the EL layer of the light-emitting element 40 is created separately using a shadow mask or the like, This enables the creation of highly detailed display devices.

[0356] Alternatively, the arrangement shown in Figure 16(B2) may also be used.

[0357] If the ratio of the total area of ​​the aperture 251 to the total area of ​​the non-apertures is too large, the liquid crystal elements will not be used. The display becomes dim. Also, the ratio of the total area of ​​the 251 openings to the total area of ​​the non-openings. If the value is too small, the display using the light-emitting element 40 will become dim.

[0358] Furthermore, if the area of ​​the opening 251 provided in the conductive layer 191, which functions as a reflective electrode, is too small This reduces the efficiency of the light that can be extracted from the light emitted by the light-emitting element 40.

[0359] The shape of the opening 251 may be, for example, a polygon, a square, an ellipse, a circle, or a cross. It is possible to have long, narrow stripes, slits, or checkerboard patterns. The aperture 251 may be positioned close to adjacent pixels. Preferably, the aperture 251 is the same color. Position the pixels close to the other pixels being displayed. This helps suppress crosstalk.

[0360] [Example of circuit configuration] Figure 17 is a circuit diagram showing an example configuration of pixel 210. In Figure 17, two adjacent pixels It shows 210.

[0361] Pixel 210 consists of switch SW1, capacitive element C1, liquid crystal element 60, switch SW2, and a transistor. It has an inverter M, a capacitive element C2, and a light-emitting element 40, etc. Also, the pixel 210 has wiring G1, wiring G2, wiring ANO, wiring CSCOM, wiring S1, and wiring S2 are electrically connected. In addition, Figure 17 shows the wiring VCOM1 that electrically connects to the liquid crystal element 60, and The wiring VCOM2 is shown to be electrically connected to the light-emitting element 40.

[0362] Figure 17 shows an example where transistors are used for switches SW1 and SW2. It is showing.

[0363] Switch SW1 has its gate connected to wiring G1, and either its source or drain connected to wiring S Connected to 1, with the source or drain being one electrode of the capacitive element C1, and liquid crystal element 6 One electrode of 0 is connected to the other electrode of the capacitive element C1, which is connected to the wiring CSCOM. The liquid crystal element 60 has its other electrode connected to the wiring VCOM1.

[0364] Switch SW2 has its gate connected to wiring G2, and either the source or drain is connected to wiring Connected to line S2, the other of the source or drain is one electrode of the capacitive element C2, transient It is connected to the gate of transistor M. Capacitive element C2 has its other electrode connected to the sole of transistor M. Transistor M is connected to either the source or the drain, and to wiring ANO. Transistor M is connected to the source or the drain. The other end of the drain is connected to one electrode of the light-emitting element 40. The light-emitting element 40 is connected to the other The electrodes are connected to the wiring VCOM2.

[0365] In Figure 17, transistor M has two gates sandwiching a semiconductor, and these are connected. This shows an example where the current that transistor M can supply is increased. It is possible.

[0366] Wiring G1 is used to provide a signal that controls switch SW1 to either a conductive or non-conductive state. This is possible. A predetermined potential can be applied to the wiring VCOM1. A liquid can be applied to the wiring S1. A signal can be provided to control the orientation state of the liquid crystal in the crystal element 60. (Wiring: CSCO) A predetermined potential can be applied to M.

[0367] Wiring G2 is used to provide a signal that controls switch SW2 to either a conductive or non-conductive state. This is possible. A potential difference is generated between wiring VCOM2 and wiring ANO, causing the light-emitting element 40 to emit light. The potentials can be applied to each. Wiring S2 controls the conduction state of transistor M. It is possible to provide a signal to do so.

[0368] The pixel 210 shown in Figure 17, for example, when displaying in reflection mode, has wiring G1 and wiring It is driven by a signal applied to line S1 and displays information using optical modulation by the liquid crystal element 60. This is possible. Also, when displaying in transparent mode, the signals supplied to wiring G2 and wiring S2 It can be driven by this, causing the light-emitting element 40 to emit light for display. Also, in both modes If it moves, the signals given to each of the wires G1, G2, S1 and S2 will be It can be driven more effectively.

[0369] [Example of cross-sectional configuration of a display device] Figure 18 shows a schematic cross-sectional view of the display device 200.

[0370] The display device 200 has an insulating layer 220 between substrate 21 and substrate 31. Between the insulating layer 220 and the light-emitting element 40, transistor 205, transistor 206, color It has layers 134, etc. Also, between the insulating layer 220 and the substrate 31, there is a liquid crystal element 60 and a coloring layer 13 1. It has a structure 11, etc.

[0371] The substrate 21 and the insulating layer 220 are bonded together by an adhesive layer 141. The edge layer 220 is bonded with an adhesive layer 142 that seals the liquid crystal.

[0372] The liquid crystal element 60 is a reflective liquid crystal element. The liquid crystal element 60 consists of a conductive layer 192 and liquid crystal 193 It has a laminated structure of a conductive layer 194 and a conductive layer 192. Furthermore, the conductive layer 192 is in contact with the substrate 21 side. A layer 191 is provided. The conductive layer 191 functions as a reflective electrode of the liquid crystal element 60. The conductive layer 191 has an opening 251. The conductive layer 192 also contains a material that transmits visible light. .

[0373] The light-emitting element 40 is a bottom-emission type light-emitting element. The light-emitting element 40 has an insulating layer 2 A laminated structure in which conductive layer 111, EL layer 112, and conductive layer 113 are stacked in that order from the 20 side. It has. The conductive layer 113 contains a material that reflects visible light, and the conductive layer 111 transmits visible light. Includes materials. The light emitted by the light-emitting element 40 is transmitted through the colored layer 134, the insulating layer 220, the aperture 251, and the guide It is ejected towards the substrate 31 via the electrolytic layer 192, etc.

[0374] Furthermore, a structure 12 is provided on the insulating layer 216 that covers the edge of the conductive layer 111. Structure 12 includes a spacer that prevents the insulating layer 220 and the substrate 21 from coming into excessive proximity. It has the function of being such. Note that structure 12 does not need to be provided if it is not required.

[0375] Either the source or drain of transistor 205 is connected to the conductive layer 111 of light-emitting element 40. They are electrically connected. For example, transistor 205 is connected to transistor M in Figure 17. handle.

[0376] One of the sources or drains of transistor 206 is connected to the conductive layer 19 via terminal portion 207. 1 and the conductive layer 192 are electrically connected. The terminal portion 207 is located within the display portion 32. The conductive layers provided on both sides of the insulating layer 220 are connected through an opening provided in the insulating layer 220. It has the function of making an electrical connection. For example, transistor 206 is a switch in Figure 17. Compatible with SW1.

[0377] Terminal portion 204 is provided in the area of ​​substrate 21 that does not overlap with substrate 31. 04, similar to the terminal portion 207, electrically connects the conductive layers provided on both sides of the insulating layer 220. To be continued. The upper surface of the terminal portion 204 is a conductive layer obtained by processing the same conductive film as the conductive layer 192. This is exposed. As a result, the terminal portion 204 and the FPC 42 are electrically connected via the connecting layer 242. It can be connected to a target.

[0378] A colored layer 131 and a light-shielding layer 132 are provided on the substrate 21 side of the substrate 31. An insulating layer 195 is provided that covers layer 131 and light-shielding layer 132. The insulating layer 195 is It functions as a bar coat. In addition, a conductive layer 194 is provided on the substrate 21 side of the insulating layer 195. It's being kicked.

[0379] Furthermore, a connecting portion 252 is provided in a part of the area where the adhesive layer 142 is provided. In the continuation portion 252, a conductive layer obtained by processing the same conductive film as the conductive layer 192, and a conductive layer A portion of 194 is electrically connected by the connector 243. Therefore, the substrate 31 The conductive layer 194 formed on the side receives signals input from the FPC 42 connected to the substrate 21 side. Alternatively, the potential can be supplied via the connection part 252.

[0380] A structure 11 is provided between the conductive layer 192 and the conductive layer 194. The structure 11 is liquid It has the function of maintaining the cell gap of the crystal element 60. Here, contrary to Figure 7(A), the structure This shows an example where the body 11 is formed on the substrate 31 side. Also, the surface of the insulating layer 195 has a recess. A recess is provided, and the structure 11 is formed in a position that overlaps with the recess. Also, on the upper The surface (a portion of the surface located on the display side) is located above the lower surface of the colored layer 131. Therefore, it is possible to reduce the distance between substrate 21 and substrate 31, and improve the viewing angle characteristics. It can be improved.

[0381] Although not shown in the diagram here, the space between the conductive layer 194 and the liquid crystal 193, and the space between the conductive layer 192 and the liquid crystal An alignment film may be provided between the crystals 193 to control the orientation of the liquid crystal 193. A portion of the orientation film may be provided covering the surface of the structure 11.

[0382] An example of a method for manufacturing the display device 200 will be described. For example, a support having a release layer A conductive layer 192, a conductive layer 191, and an insulating layer 220 are formed on the board in that order, and then a transistor is formed. After forming components such as 205 and the light-emitting element 40, the substrate 21 and the support substrate are bonded together using the adhesive layer 141. Combine them. Then, at the interfaces between the release layer and the insulating layer 220, and between the release layer and the conductive layer 192. By peeling, the support substrate and the release layer are removed. Separately, the colored layer 131 A substrate 31 is prepared with a light-shielding layer 132, a structure 11, etc. already formed on it. Then substrate 2 Liquid crystal 193 is dropped onto substrate 1 or substrate 31, and substrates 21 and 31 are bonded together by adhesive layer 142. By combining them, a display device 200 can be manufactured.

[0383] As the release layer, a material that causes delamination at the interface with the insulating layer 220 and the conductive layer 192 is appropriately selected. It is possible to select a layer containing a high-melting-point metal material such as tungsten as the release layer. Layers containing oxides of the metal material are laminated and used, and the insulating layer 220 on the release layer is nitrided It is preferable to use layers made of multiple layers of silicon dioxide, silicon oxide nitride, silicon nitride oxide, etc. Using a high-melting-point metal material for the delamination layer will raise the formation temperature of subsequent layers. This makes it possible to reduce the concentration of impurities and realize a highly reliable display device.

[0384] The conductive layer 192 may be a metal oxide, a metal nitride, or a low-resistance oxide semiconductor. It is preferable to use oxides such as hydrogen, boron, and ri. At least one of the concentrations of nitrogen, other impurities, and the amount of oxygen deficiency is determined by the transient A material with improved performance compared to the semiconductor layer used in the t can be used for the conductive layer 192.

[0385] The above is an explanation of Configuration Example 3.

[0386] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0387] (Embodiment 2) In this embodiment, an input device (touch sensor) applicable to a display device according to one aspect of the present invention is provided. This section describes an example of a driving method.

[0388] Figure 19(A) is a block diagram showing the configuration of a mutual capacitive touch sensor. (A) shows the pulse voltage output circuit 601 and the current detection circuit 602. See Figure 19. In (A), the electrode 621 to which the pulse is applied and the electrode 622 to which the change in current is detected are respectively This is shown as six wires: wiring X1-X6 and wiring Y1-Y6. The number of electrodes is as follows: This is not limited to this. Also, Figure 19(A) shows the superposition of electrodes 621 and 622. Alternatively, the capacitance 603 formed by the proximity of electrodes 621 and 622 This is illustrated in the diagram. Note that electrodes 621 and 622 may be interchangeable in terms of their functions.

[0389] For example, the electrode 151 illustrated in Embodiment 1 corresponds to either electrode 621 or electrode 622. Electrode 152 corresponds to the other of electrode 621 and electrode 622.

[0390] The pulse voltage output circuit 601, for example, inputs pulse voltages sequentially to wiring X1-X6. This is the circuit. The current detection circuit 602 detects the current flowing through each of the wires Y1-Y6, for example. This is a circuit for detection.

[0391] When a pulse voltage is applied to one of the wires X1-X6, the capacitance 603 is formed. An electric field is generated between electrode 621 and electrode 622, and a current flows through electrode 622. A portion of the electric field generated is shielded when the object being detected, such as a finger or pen, is in close proximity or in contact with it. The strength of the electric field generated between the electrodes changes. As a result, the magnitude of the current flowing through electrode 622 changes. It changes.

[0392] For example, if there is no proximity or contact with the object to be detected, the magnitude of the current flowing through wiring Y1-Y6 The value will correspond to the size of the 603 capacity. On the other hand, the electric current is emitted when the object being detected is in close proximity to or in contact with. If a portion of the field is shielded, the magnitude of the current flowing through wiring Y1-Y6 will decrease. To detect. This can be used to detect the proximity or contact of an object to be detected.

[0393] The current detection circuit 602 detects the (time-dependent) integral of the current flowing through a single wire. Alternatively, detection can be performed using, for example, an integrating circuit. The peak value may be detected. In that case, for example, the current is converted to voltage, and the peak voltage value is detected. You may detect a value.

[0394] Figure 19(B) shows the input and output waves of the mutual capacitance type touch sensor shown in Figure 19(A). An example of a timing chart for the shape is shown. Figure 19(B) shows the detection of each matrix in one sensing period. The system shall perform the operation. Also, in Figure 19(B), in cases where contact or proximity of the detected object is not detected, There are two scenarios: when the device is not touched, and when contact or proximity of the detected object is detected (when touched). The combinations are shown side by side. Here, for wiring Y1-Y6, the magnitude of the detected current is The waveforms of the corresponding voltages are shown.

[0395] As shown in Figure 19(B), pulse voltages are sequentially applied to the wiring X1-X6. Accordingly, current flows through wiring Y1-Y6. When not in contact, current flows through wiring X1-X6. As the voltage changes, the same current flows through the wiring Y1-Y6, therefore the wiring Y1-Y6 Each output waveform will be similar. On the other hand, when touched, of the wiring Y1-Y6, Because the current flowing through the wiring located at the point where the detected object is in contact or nearby decreases, Figure 1 As shown in 9(B), the output waveform changes.

[0396] In Figure 19(B), the object to be detected is located at or near the point where wiring X3 and wiring Y3 intersect. This shows an example of contact or proximity.

[0397] Thus, in the mutual capacitance method, the electric field generated between the pair of electrodes is shielded. By detecting changes in electric current, the position information of the object being detected can be obtained. If the detection sensitivity is high, the object to be detected will be far from the detection surface (e.g., the surface of a touch panel). However, it is also possible to detect its coordinates.

[0398] Furthermore, in the case of a touch panel, there is a display period for the display unit and a sensing period for the touch sensor. By using a drive method with a staggered timing, the detection sensitivity of the touch sensor can be increased. For example, if you separate the display period and the sensing period within the duration of one display frame... Good. Furthermore, it is preferable to include two or more sensing periods within a single frame. By increasing the sensing frequency, detection sensitivity can be further improved.

[0399] Furthermore, the pulse voltage output circuit 601 and the current detection circuit 602 are, for example, on a single IC chip. It is preferable that it is formed inside. The IC is mounted, for example, in a touch panel. Alternatively, it is preferable to mount it on a circuit board inside the housing of an electronic device. When using a snap panel, parasitic capacitance increases in the bent portion, and the impact of noise becomes greater. Because there is a risk of this happening, an IC with a drive method that is less susceptible to noise should be used. It is preferable that a driving method that increases the signal-to-noise ratio (S / N ratio) be applied. It is preferable to use an IC.

[0400] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0401] (Embodiment 3) In this embodiment, it is used in place of each transistor shown in the above embodiment. An example of a transistor that can be made will be explained using a diagram.

[0402] A display device according to one aspect of the present invention uses a bottom-gate type transistor or a top-gate type transistor. It can be fabricated using various types of transistors, such as radiators. Therefore, existing The semiconductor layer materials and transistor structures used can be easily replaced to match the manufacturing line. It is possible.

[0403] [Bottom-gate transistor] Figure 20(A1) shows a channel-protected transistor, a type of bottom-gate transistor. This is a cross-sectional view of transistor 810. In Figure 20(A1), transistor 810 is located on substrate 7. It is formed on 71. Also, the transistor 810 has an insulating layer 772 on the substrate 771. It has an electrode 746 via an insulating layer 726. It has the following characteristics. Electrode 746 can function as a gate electrode. The insulating layer 726 is a gate insulating layer. It can function.

[0404] Furthermore, an insulating layer 741 is provided on the channel formation region of the semiconductor layer 742. In contact with a portion of 742, electrodes 744a and 744b are located on the insulating layer 726. Electrode 744a can function as either the source electrode or the drain electrode. Electrode 744b is , can function as either the source electrode or the other of the drain electrode. Part of electrode 744a, and A portion of the electrode 744b is formed on the insulating layer 741.

[0405] The insulating layer 741 can function as a channel protection layer. The insulating layer 741 is placed on the channel formation region. By providing 1, the semiconductor layer 742 that is formed when electrodes 744a and 744b are formed Exposure can be prevented. Therefore, when forming electrodes 744a and 744b, the semiconductor This prevents the channel formation region of layer 742 from being etched. One embodiment of the present invention According to the manufacturer, it is possible to realize transistors with good electrical characteristics.

[0406] Furthermore, transistor 810 has an insulating layer 741 on electrode 744a, electrode 744b and insulating layer 741. It has an edge layer 728 and an insulating layer 729 on top of the insulating layer 728.

[0407] For example, insulating layer 772 is made using the same materials and methods as insulating layer 722 and insulating layer 705. It can be formed in this way. Furthermore, the insulating layer 772 may be a laminate of multiple insulating layers. For example, semiconductor layer 742 is formed using the same materials and methods as semiconductor layer 708. This is possible. Furthermore, the semiconductor layer 742 may be a stack of multiple semiconductor layers. For example, electrode 746 can be formed using the same materials and methods as electrode 706. The electrode 746 may be a laminate of multiple conductive layers. For example, the insulating layer 72 Layer 6 can be formed using the same materials and methods as the insulating layer 707. Layer 726 may be a lamination of multiple insulating layers. Also, for example, electrode 744a and electrode 744b is formed using the same materials and methods as electrode 714 or electrode 715. This is possible. Note that electrodes 744a and 744b may be made up of multiple conductive layers. Furthermore, for example, the insulating layer 741 is formed using the same materials and methods as the insulating layer 726. This is possible. Furthermore, the insulating layer 741 may be a lamination of multiple insulating layers. Also, for example, If so, the insulating layer 728 can be formed using the same materials and methods as the insulating layer 710. The insulating layer 728 may be a lamination of multiple insulating layers. For example, the insulating layer 7 Layer 29 can be formed using the same materials and methods as the insulating layer 711. The edge layer 729 may be a lamination of multiple insulating layers.

[0408] The electrodes, semiconductor layer, insulating layer, etc. that constitute the transistor disclosed in this embodiment are different from other It can be formed using the materials and methods disclosed in the embodiments.

[0409] When an oxide semiconductor is used for the semiconductor layer 742, the electrodes 744a and 744b are small Even if not present, the part in contact with semiconductor layer 742 will have oxygen removed from a portion of semiconductor layer 742, resulting in oxygen depletion. It is preferable to use a material capable of causing damage. Oxygen vacancies in semiconductor layer 742 In the region where this occurs, the carrier concentration increases, and the region becomes n-type, and the n-type region (n + (layer) Therefore, the region can function as either a source region or a drain region. When an oxide semiconductor is used for semiconductor layer 742, oxygen is removed from semiconductor layer 742, resulting in an oxygen deficiency. Examples of materials capable of producing this include tungsten and titanium. Cut.

[0410] By forming a source region and a drain region in the semiconductor layer 742, the electrode 744 The contact resistance between electrode 744b and semiconductor layer 742 can be reduced. To improve the electrical characteristics of the transistor, such as field effect mobility and threshold voltage. It is possible.

[0411] When a semiconductor such as silicon is used for the semiconductor layer 742, the semiconductor layer 742 and the electrode 744 Between a, and between semiconductor layer 742 and electrode 744b, an n-type semiconductor or a p-type semiconductor is used. It is preferable to provide a layer that functions as an n-type semiconductor or a p-type semiconductor. It can function as either the source or drain region of a transistor.

[0412] The insulating layer 729 prevents or reduces the diffusion of impurities from the outside into the transistor. It is preferable to form it using a material that has the necessary properties. Furthermore, the insulating layer 729 may be omitted if necessary. It can also be abbreviated.

[0413] Furthermore, when an oxide semiconductor is used for the semiconductor layer 742, before or after the formation of the insulating layer 729 Heat treatment may be performed afterwards, or before or after the formation of the insulating layer 729. , diffusing oxygen contained in the insulating layer 729 and other insulating layers into the semiconductor layer 742, The oxygen deficiency in 742 can be compensated for. Alternatively, the insulating layer 729 can be heated while forming the film. This makes it possible to fill in the oxygen vacancies in the semiconductor layer 742.

[0414] Generally speaking, CVD methods utilize plasma CVD (Pla CVD). SMA Enhanced CVD method, Thermal CVD (TCVD) which utilizes heat It can be further classified into methods such as the al CVD method. D: Metal CVD) method, metal organic CVD (MOCVD) method It can be classified into methods such as c) CVD.

[0415] Furthermore, generally speaking, evaporation methods include resistance heating evaporation, electron beam evaporation, and MBE (Molecula r Beam Epitaxy) method, PLD (Pulsed Laser Deposit) tion) method, IBAD(Ion Beam Assisted Deposition) It can be classified into methods such as the ) method and the ALD (Atomic Layer Deposition) method. .

[0416] Plasma CVD can produce high-quality films at relatively low temperatures. MOCVD and vapor deposition are also available. When using deposition methods that do not use plasma during film formation, such as the method described above, damage occurs to the surface to be formed. This method produces a film that is less prone to defects and has fewer defects.

[0417] Furthermore, generally speaking, sputtering methods include DC sputtering and magnetron sputtering. Sputtering method, RF sputtering method, ion beam sputtering method, ECR (Electr (on Cyclotron Resonance) Sputtering method, opposing targets This can be classified into methods such as the puttering method.

[0418] In the opposing target sputtering method, the plasma is confined between the targets. This reduces plasma damage to the substrate. Also, depending on the tilt of the target This allows for a shallower incidence angle of sputtering particles onto the substrate, thus improving step coverage. It can be improved.

[0419] The transistor 811 shown in Figure 20(A2) has a back gate electrode on the insulating layer 729. It differs from the transistor 810 in that it has an electrode 723 that can function. It can be formed using the same materials and methods as for the 746.

[0420] Generally, the back gate electrode is formed of a conductive layer, and the gate electrode and the back gate electrode are semiconductors. It is positioned so as to sandwich the channel-forming region of the body layer. Therefore, the back gate electrode is the gate It can function similarly to an electrode. The potential of the buck gate electrode is the same potential as the gate electrode. It may be set to ground potential (GND potential) or any other potential. By changing the potential of the gate electrode independently of the gate electrode, the transistor's performance can be controlled. The key voltage can be changed.

[0421] Both electrodes 746 and 723 can function as gate electrodes. Insulating layers 726, 728, and 729 are each connected to the gate insulating layer. It can function in this way. The electrode 723 is provided between the insulating layer 728 and the insulating layer 729. You can leave it.

[0422] Note that when one of the electrodes 746 or 723 is referred to as the "gate electrode," the other is referred to as the "ba This is called a "gate electrode." For example, in transistor 811, electrode 723 is called a "gate electrode." When referring to "electrodes," electrode 746 is called the "back gate electrode." Also, electrode 723 is called the "gate electrode." When used as a "top-gate electrode", transistor 811 is a top-gate type transistor. It can be considered as one type. Also, either electrode 746 or electrode 723 is considered as "the It is sometimes called the "first gate electrode" and the other the "second gate electrode."

[0423] By providing electrodes 746 and 723 with the semiconductor layer 742 in between, further, electrode 7 By setting 46 and electrode 723 to the same potential, carriers flow in semiconductor layer 742. As the region becomes larger in the film thickness direction, the amount of carrier movement increases. As a result, As the on-current of transistor 811 increases, the field-effect mobility also increases.

[0424] Therefore, transistor 811 has a large on-current relative to its occupied area. It is a transistor. That is, the area occupied by transistor 811 relative to the required on-current. This can be made smaller. According to one aspect of the present invention, the occupied area of ​​the transistor can be reduced. Therefore, according to one aspect of the present invention, a semiconductor device with a high degree of integration can be realized. It is possible.

[0425] Furthermore, since the gate electrode and back gate electrode are formed of a conductive layer, the outside of the transistor A function to prevent the electric field generated from acting on the semiconductor layer in which the channel is formed (especially electrostatic) It has an electric field shielding function against gas, etc. Furthermore, the back gate electrode is larger than the semiconductor layer. By forming it in a specific way and covering the semiconductor layer with a back gate electrode, the electric field shielding function can be enhanced. ru.

[0426] Furthermore, electrodes 746 and 723 each have the function of shielding against external electric fields. Therefore, the charge of charged particles etc. that are generated on the insulating layer 772 side or above the electrode 723 is transferred to the semiconductor layer It does not affect the channel formation region of 742. As a result, stress tests (e.g., negative impact on the gate) are not performed. Applying a charge - GBT (Gate Bias-Temperature) stress test Degradation due to the test is suppressed. Also, depending on the magnitude of the drain voltage, the on current starts to flow. This can reduce the phenomenon of the gate voltage (on-start voltage) changing. The effect occurs when electrodes 746 and 723 are at the same potential or different potentials. .

[0427] Note that the BT stress test is a type of accelerated test that shows the effects of long-term use. This allows for the rapid evaluation of changes in the characteristics of the ZISTA (changes over time). In particular, it is useful for BT stress testing. The change in the transistor's threshold voltage before and after testing is an important indicator for examining reliability. This serves as a benchmark. The smaller the fluctuation in the threshold voltage, the more reliable the transistor is considered to be. ru.

[0428] Furthermore, it has electrodes 746 and 723, and electrodes 746 and 723 are at the same potential. This reduces the fluctuation in the threshold voltage. Therefore, multiple transistors The variation in electrical characteristics is also reduced at the same time.

[0429] Furthermore, transistors with a back gate electrode have a positive charge applied to the gate (+GB). The threshold voltage fluctuations before and after the T-stress test were also observed in transistors without back gate electrodes. It's smaller than Zista.

[0430] Furthermore, by forming the back gate electrode with a light-shielding conductive film, the back gate electrode This prevents light from entering the semiconductor layer from the polar side. Therefore, photodegradation of the semiconductor layer is prevented. This prevents degradation of electrical characteristics, such as a shift in the transistor's threshold voltage. ru.

[0431] According to one aspect of the present invention, a transistor with good reliability can be realized. This enables the realization of highly reliable semiconductor devices.

[0432] Figure 20(B1) shows a channel-protected transistor, which is a type of bottom-gate transistor. A cross-sectional view of transistor 820 is shown. Transistor 820 is almost identical to transistor 810. It has the same structure, but differs in that the insulating layer 741 covers the edge of the semiconductor layer 742. Furthermore, in the opening formed by selectively removing a portion of the insulating layer 741 that overlaps with the semiconductor layer 742, In this configuration, the semiconductor layer 742 and the electrode 744a are electrically connected. In another opening formed by selectively removing a portion of the insulating layer 741 that overlaps with the semiconductor layer, 742 and electrode 744b are electrically connected. The channel-forming region of the insulating layer 741 overlaps with the surrounding area. This region can function as a channel protection layer.

[0433] The transistor 821 shown in Figure 20(B2) has a back gate electrode on the insulating layer 729. It differs from transistor 820 in that it has an electrode 723 that can function.

[0434] By providing the insulating layer 741, the semiconductor generated during the formation of electrodes 744a and 744b is prevented. Exposure of body layer 742 can be prevented. Thus, the formation of electrodes 744a and 744b This can sometimes prevent the semiconductor layer 742 from becoming thinner.

[0435] Furthermore, transistors 820 and 821 are transistors 810 and The distance between electrode 744a and electrode 746, and between electrode 744b and electrode 811 are different from those of the lampistor 811. The distance between electrodes 746 increases. Therefore, parasitic capacitance is generated between electrodes 744a and 746. This can reduce the parasitic capacitance between electrode 744b and electrode 746. It can be cut. According to one aspect of the present invention, a transistor with good electrical characteristics can be realized. can.

[0436] The transistor 825 shown in Figure 20(C1) is a bottom-gate type transistor. This is a channel-etched transistor. Transistor 825 has an insulating layer 741 Electrodes 744a and 744b are formed without using . Therefore, electrodes 744a and When electrode 744b is formed, a portion of the exposed semiconductor layer 742 may be etched. On the other hand, since the insulating layer 741 is not provided, the productivity of transistors can be increased.

[0437] The transistor 826 shown in Figure 20(C2) has a back gate electrode on the insulating layer 729. It differs from transistor 825 in that it has an electrode 723 that can function.

[0438] [Top-gate transistor] Figure 21(A1) shows transistor 830, a type of top-gate transistor. A cross-sectional view is shown. Transistor 830 has a semiconductor layer 742 on top of an insulating layer 772, and semiconductor On the body layer 742 and the insulating layer 772, there is an electrode 744a that is in contact with a part of the semiconductor layer 742, and It has an electrode 744b that is in contact with a part of the semiconductor layer 742, and the semiconductor layer 742, electrode 744a, The electrode 744b has an insulating layer 726, and the electrode 746 has an insulating layer 726.

[0439] Transistor 830 has electrodes 746 and 744a, and electrodes 746 and Because electrode 744b does not overlap, parasitic capacitance occurs between electrode 746 and electrode 744a, Furthermore, the parasitic capacitance that occurs between electrode 746 and electrode 744b can be reduced. Furthermore, after forming electrode 746, electrode 746 is used as a mask to separate impurities 755 into semiconductors. By introducing it into layer 742, it will self-align within the semiconductor layer 742. An impurity region can be formed (see Figure 21(A3)). According to one aspect of the present invention, This makes it possible to create transistors with good electrical characteristics.

[0440] The introduction of impurity 755 is performed using an ion implantation device, an ion doping device, or plasma. This can be done using a processing device.

[0441] For example, impurities 755 include at least one of the elements from Group 13 or Group 15. One type of element can be used. Also, when an oxide semiconductor is used for the semiconductor layer 742. This includes, as impurity 755, at least one element from among noble gases, hydrogen, and nitrogen. It is also possible to use it.

[0442] The transistor 831 shown in Figure 21(A2) has an electrode 723 and an insulating layer 727. The point is different from transistor 830. Transistor 831 is formed on the insulating layer 772. It has an electrode 723 and an insulating layer 727 formed on the electrode 723. It can function as a back gate electrode. Therefore, the insulating layer 727 is a gate insulating layer. It can function as such. The insulating layer 727 is made of the same material and method as the insulating layer 726. It can be formed more effectively.

[0443] Similar to transistor 811, transistor 831 has a large on-voltage relative to its occupied area. It is a transistor that has current. That is, for the required on-current, the transistor The occupied area of ​​831 can be reduced. According to one aspect of the present invention, the transistor The occupied area can be reduced. Therefore, according to one aspect of the present invention, a semi-integrated area with a high density can be formed. A conductive device can be realized.

[0444] The transistor 840 shown in Figure 21(B1) is a top-gate type transistor. There is one. Transistor 840 is formed after electrodes 744a and 744b are formed and semiconductor It differs from transistor 830 in that it forms body layer 742. An example is shown in Figure 21(B2). The transistor 841 has an electrode 723 and an insulating layer 727, It is different from 840. In transistors 840 and 841, semiconductor layer 74 Part of 2 is formed on electrode 744a, and the other part of semiconductor layer 742 is formed on electrode 744b It will be accomplished.

[0445] Similar to transistor 811, transistor 841 has a large ON-voltage relative to its occupied area. It is a transistor that has current. That is, for the required on-current, the transistor The occupied area of ​​841 can be reduced. According to one aspect of the present invention, the transistor The occupied area can be reduced. Therefore, according to one aspect of the present invention, a semi-integrated area with a high density can be formed. A conductive device can be realized.

[0446] The transistor 842 shown in Figure 22(A1) is a top-gate type transistor. There are two. Transistor 842 has an insulating layer 729 formed, and then electrodes 744a and electrodes The point forming 744b differs from transistors 830 and 840. Electrode 744 a and electrode 744b are semi-semi It is electrically connected to the conductor layer 742.

[0447] Furthermore, a portion of the insulating layer 726 that does not overlap with electrode 746 is removed, and electrode 746 and the remaining insulating layer are removed. By using layer 726 as a mask to introduce impurity 755 into semiconductor layer 742, Impurity regions can be formed in layer 742 through self-alignment. See Figure 22(A3). In transistor 842, the insulating layer 726 extends beyond the edge of electrode 746. It has a region that is stretched. When introducing impurity 755 into semiconductor layer 742, semiconductor layer 74 The impurity concentration in the region where impurity 755 is introduced via insulating layer 726 is as follows: The region becomes smaller than the region where impurity 755 was introduced without going through it. Therefore, adjacent to electrode 746 In the region of semiconductor layer 742, there is an LDD (Lightly Doped Drain) region. It is formed.

[0448] The transistor 843 shown in Figure 22(A2) has an electrode 723 at the point where it is the transistor 8 It is different from 42. Transistor 843 has electrodes 723 formed on substrate 771. It overlaps with the semiconductor layer 742 via the insulating layer 772. Electrode 723 serves as a back gate electrode. It can function.

[0449] Also, transistor 844 shown in Figure 22(B1) and transistor shown in Figure 22(B2) As in the case of sta845, the entire insulating layer 726 in the region that does not overlap with electrode 746 may be removed. Also, transistor 846 shown in Figure 22(C1) and transistor shown in Figure 22(C2) As with ST847, the insulating layer 726 may be left intact.

[0450] Transistors 842 through 847 also form electrodes 746 after the electrode 74 By using 6 as a mask to introduce impurity 755 into semiconductor layer 742, semiconductor layer 74 2. An impurity region can be formed in a self-aligned manner. According to one aspect of the present invention, A transistor with good characteristics can be realized. Furthermore, according to one aspect of the present invention, This makes it possible to realize semiconductor devices with high product density.

[0451] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination.

[0452] (Embodiment 4) In this embodiment, a display module and electronic device having a display device according to one aspect of the present invention I will now explain this using diagrams.

[0453] The display module 8000 shown in Figure 23 consists of an upper cover 8001 and a lower cover 8002. In between, the touch panel 8004 connected to the FPC8003, the frame 8009, and the print It has a circuit board 8010 and a battery 8011.

[0454] A display panel, touch panel, or touch panel module according to one embodiment of the present invention is, for example, It can be used with the touch panel 8004.

[0455] The upper cover 8001 and lower cover 8002 are sized to fit the touch panel 8004. Furthermore, the shape and dimensions can be changed as needed.

[0456] The touch panel 8004 is a display panel using either a resistive or capacitive touch panel. It can be used superimposed on the touch panel 8004. It is also possible to incorporate touch panel functionality. It is also possible to install a light sensor in each of the four pixels to create an optical touch panel.

[0457] Furthermore, when transmissive or semi-transmissive liquid crystal elements are used, the touch panel 8004 and A backlight may be provided between frames 8009. The backlight has a light source. Alternatively, the light source may be placed on the backlight, or the light source may be placed at the edge of the backlight. A configuration may be used in which a light diffuser plate is also used. When using a light-emitting element, or in the case of a reflective panel, a backlight is provided. It is also acceptable to omit this configuration.

[0458] Frame 8009 provides protection for the touch panel 8004, as well as for the printed circuit board 8010. It functions as an electromagnetic shield to block electromagnetic waves generated by operation. The frame 8009 may also function as a heat sink.

[0459] The printed circuit board 8010 contains power supply circuits and signals for outputting video and clock signals. It has a power processing circuit. The power supply that provides power to the power supply circuit is an external commercial power supply. Alternatively, a separate power source, the battery 8011, may also be used. This can be omitted when using commercial power.

[0460] Additionally, the touch panel 8004 includes components such as polarizing plates, phase difference plates, and prism sheets. They may be provided as such.

[0461] Display panel, light-emitting panel, sensor panel, touch panel, touch panel according to one embodiment of the present invention Using modules, input devices, display devices, or input / output devices, electronic devices and lighting devices It can be manufactured. Using an input device, display device, or input / output device according to one embodiment of the present invention, a curved surface can be manufactured. It is possible to manufacture highly reliable electronic devices and lighting devices. Also, an input device according to one embodiment of the present invention Using a display device or input / output device, flexible and reliable electronic equipment and lighting equipment A device can be created. Furthermore, using an input device or input / output device according to one embodiment of the present invention, a touch sensor can be created. This allows for the creation of electronic devices and lighting equipment with improved sensor detection sensitivity.

[0462] Examples of electronic devices include television equipment (also known as televisions or television receivers). (e.g., computer monitors, digital cameras, digital video cameras, digital) Photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game consoles, Examples include personal digital assistants, audio playback devices, and large-scale game machines such as pachinko machines.

[0463] Furthermore, if an electronic device or lighting device according to one aspect of the present invention is flexible, it can be used inside houses and buildings. It can also be incorporated along curved surfaces of walls or exterior walls, or the interior or exterior of automobiles. be.

[0464] Furthermore, an electronic device according to one aspect of the present invention may have a secondary battery and contactless power transmission It is preferable that the secondary battery can be charged using this method.

[0465] Examples of secondary batteries include lithium polymer batteries (lithium-ion batteries) that use a gel-like electrolyte. Lithium-ion batteries such as polymer batteries, nickel-metal hydride batteries, nickel-cadmium batteries, organic radio-ion batteries Examples include lead-acid batteries, air batteries, nickel-zinc batteries, and silver-zinc batteries.

[0466] An electronic device according to one aspect of the present invention may have an antenna. The antenna receives a signal. This allows the display unit to show images, information, etc. Also, electronic devices can use secondary batteries. If it has this feature, the antenna may be used for contactless power transmission.

[0467] Figures 24(A) to 24(H), and Figures 25(A) and (B) are diagrams showing electronic equipment. These electronic devices consist of a housing 5000, a display unit 5001, a speaker 5003, and an LED light. Lamp 5004, operation key 5005 (including power switch or operation switch), connection terminals 5006, Sensor 5007 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light) Liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power, radiation, flow (Including functions for measuring quantity, humidity, gradient, vibration, odor, or infrared radiation), microphone 5008, etc. may be included.

[0468] Figure 24(A) shows a mobile computer, and in addition to the above, it also has a switch 5009 It may have an infrared port 5010, etc.

[0469] Figure 24(B) shows a portable image playback device equipped with a recording medium (for example, a DVD player). In addition to the above, it also has a second display unit 5002, a recording medium reading unit 5011, and the like. It is possible.

[0470] Figure 24(C) shows a television setup, and in addition to the above-mentioned components, stand 5012, etc. It can be provided. In addition, the television equipment is operated by the operating switches provided in the housing 5000. This can be done via the switch or by a separate remote control unit 5013. Remote control unit 501 The control keys on unit 3 allow you to operate the channel and volume, and the display unit 5001 The video displayed on the screen can be controlled. Furthermore, the remote control unit 5013 can be controlled by the remote control unit. The configuration may also include a display unit that displays information output from the control unit 5013.

[0471] Figure 24(D) shows a portable gaming machine, and in addition to the above, it includes a recording medium reading unit 5011, It may have the following:

[0472] Figure 24(E) shows a digital camera with television receiving capabilities, and in addition to the above, an It may have a tenter 5014, a shutter button 5015, an image receiving unit 5016, etc.

[0473] Figure 24(F) shows a portable gaming machine, which, in addition to the above-mentioned features, includes a second display unit 5002 and a recorder. It may have a media reading unit 5011, etc.

[0474] Figure 24(G) shows a portable television receiver, and in addition to the above, it also transmits and receives signals. It may have a charger 5017, etc.

[0475] Figure 24(H) shows a wristwatch-type information terminal, and in addition to the above, it includes band 5018, and a fastener. It may have metal 5019, etc. Mounted on the housing 5000 which also serves as the bezel. The display unit 5001 has a non-rectangular display area. The display unit 5001 displays the time. Icon 5020, other icons 5021, etc. can be displayed.

[0476] Figure 25(A) shows a digital signage (electronic billboard). Yes, there is. Figure 25(B) shows a digital signage display mounted on a cylindrical column.

[0477] The electronic devices shown in Figures 24(A) to 24(H) and Figures 25(A) and (B) are various It can have various functions. For example, it can display various types of information (still images, videos, text images, etc.). Functions that display information on the display unit, touch panel functions, calendar, date or time display, etc. Functions that control processing by various software (programs), wireless communication function, Functions that connect to various computer networks using linear communication functions, and wireless communication functions Functions that transmit or receive various data, programs or It can have functions such as reading data and displaying it on the display unit. Furthermore, it can have multiple tables In electronic devices having a display unit, one display unit primarily displays image information, and another one A function that primarily displays text information on the display unit, or displays images that take parallax into account on multiple display units. It can have functions such as displaying a three-dimensional image by displaying an image. Furthermore, it can receive Electronic devices having an image unit include functions for capturing still images, functions for capturing videos, and capturing Functions to automatically or manually correct the captured image, and the recording medium (external or internal to the camera) on which the captured image is stored. It can have functions such as saving images to a storage unit and displaying captured images on a display unit. Furthermore, the electronic devices shown in Figures 24(A) to 24(H) and Figures 25(A) and (B) have The functions that can be performed are not limited to these, and it can have a variety of functions.

[0478] Figures 26(A), (B), (C1), (C2), (D), and (E) show the curved display section 70. An example of an electronic device having 00 is shown. The display unit 7000 has a curved display surface. It can display information along a curved display surface. Furthermore, the display unit 7000 is flexible. It's fine if you do that.

[0479] The display unit 7000 is a functional panel, display panel, light-emitting panel, and sensor panel according to one embodiment of the present invention. It is manufactured using a panel, touch panel, display device, or input / output device, etc. One embodiment of the present invention Depending on the design, it is possible to provide highly reliable electronic devices equipped with a curved display.

[0480] Figure 26(A) shows an example of a mobile phone. The mobile phone 7100 has a casing 7101 and a display Unit 7000, operation button 7103, external connection port 7104, speaker 7105, microphone It has 7106, etc.

[0481] The mobile phone 7100 shown in Figure 26(A) is equipped with a touch sensor on the display unit 7000. All operations, such as making a phone call or typing text, are displayed using your finger or stylus. This can be done by touching part 7000.

[0482] Furthermore, the power can be turned ON or OFF by operating the operation button 7103, and the display unit 7000 You can switch the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0483] Figure 26(B) shows an example of a television system. The television system 7200 consists of a housing 7 The display unit 7000 is incorporated into 201. Here, the stand 7203 connects to the housing 7 This shows the composition that supported 201.

[0484] The operation of the television device 7200 shown in Figure 26(B) is performed using the operating system provided on the housing 7201. This can be done via a switch or a separate remote control unit 7211. Alternatively, the display unit 70 00 may be equipped with a touch sensor, and can be operated by touching the display unit 7000 with a finger, etc. This is also fine. The remote control unit 7211 displays the information output from the remote control unit 7211. It may have a display unit. Operation keys or touch controls provided on the remote control unit 7211. The control panel allows you to operate the channel and volume, and the information is displayed on the display unit 7000. The video can be manipulated.

[0485] The television system 7200 will consist of a receiver, modem, and other components. This allows for the reception of general television broadcasts. Furthermore, it enables wired or wireless reception via a modem. By connecting to a communication network, one-way (sender to receiver) or two-way communication is possible. It is also possible to communicate information (between a sender and a receiver, or between receivers, etc.).

[0486] Figures 26(C1), (C2), (D), and (E) show examples of mobile information terminals. The terminal has a housing 7301 and a display unit 7000. Furthermore, it has operation buttons and an external connection port. It may have a speaker, microphone, antenna, or battery, etc. Display unit 7000 It is equipped with a touch sensor. The mobile information terminal is operated by touching the display 700 with a finger or stylus. This can be done by touching 0.

[0487] Figure 26(C1) is a perspective view of the mobile information terminal 7300, and Figure 26(C2) is a perspective view of the mobile information Figure 26(D) is a top view of terminal 7300. Figure 26(E) is a perspective view of the personal digital assistant 7320.

[0488] The portable information terminal illustrated in this embodiment may be, for example, a telephone, a notebook, or an information viewing device. It has one or more selected functions. Specifically, it can be used as a smartphone. It is possible. The portable information terminal exemplified in this embodiment is, for example, a mobile phone, an electronic mail Types of activities include reading and creating documents, playing music, internet communication, and playing computer games. It can run various applications.

[0489] The personal digital assistant (PDAs) 7300, 7310, and 7320 are capable of displaying text and images. Image information can be displayed on multiple surfaces. For example, as shown in Figures 26(C1) and (D). As shown, three operation buttons 7302 are displayed on one side, and information 7303, indicated by a rectangle, is displayed on the other side. It can be displayed on the top of the mobile information terminal. In Figures 26(C1) and (C2), information is displayed on the top of the mobile information terminal. The following are examples of how information can be displayed; Figure 26(D) shows an example where information is displayed on the side of a mobile device. Furthermore, information may be displayed on three or more sides of the mobile information terminal, and in Figure 26(E), information 7 This shows an example where information 304, 7305, and 7306 are displayed on different sides.

[0490] For example, notifications from social networking services (SNS) are an example of this type of information. , a display indicating incoming emails or phone calls, the subject or sender name of emails, etc. This includes the date and time, battery level, and antenna signal strength. Alternatively, the information may be displayed. Instead of information, you may display operation buttons, icons, or other elements in the same location.

[0491] For example, a user of the personal digital assistant 7300 would carry the personal digital assistant 7300 in the breast pocket of their clothing. With the device stored, you can check its display (information 7303 in this case).

[0492] Specifically, the phone number or name of the caller of the incoming call is recorded on the mobile information terminal 7300. It will be displayed in a position where it can be observed from above. The user will take the 7300 personal information terminal out of their pocket. Without having to step out, you can check the display and decide whether or not to answer the call.

[0493] Figures 26(F) to (H) show an example of a lighting device having a curved light-emitting section.

[0494] The light-emitting part of each lighting device shown in Figures 26(F) to (H) is a functional panel according to one embodiment of the present invention. Display panel, light-emitting panel, sensor panel, touch panel, display device, or input / output device It is manufactured using a device, etc. According to one aspect of the present invention, it has a curved light-emitting part and reliable We can provide high-quality lighting equipment.

[0495] The lighting device 7400 shown in Figure 26(F) includes a light-emitting section 7402 having a wave-shaped light-emitting surface. Therefore, it is a lighting fixture with a highly aesthetic design.

[0496] The light-emitting section 7412 of the lighting device 7410 shown in Figure 26(G) has two convexly curved parts The light-emitting parts are arranged symmetrically. Therefore, the lighting device 7410 is the central component. It can illuminate in all directions.

[0497] The lighting device 7420 shown in Figure 26(H) includes a concavely curved light-emitting section 7422. Therefore, in order to concentrate the light emitted from the light-emitting unit 7422 onto the front of the lighting device 7420, This is suitable for brightly illuminating a wide area. Furthermore, this shape creates shadows. It has the effect of making it difficult to do.

[0498] Furthermore, the light emission provided by each of the lighting devices 7400, 7410, and 7420 The part may be flexible. The light-emitting part is fixed with a plastic material or a movable frame or other material. Furthermore, the light-emitting surface of the light-emitting part may be configured to be freely curved according to the application.

[0499] Lighting devices 7400, 7410, and 7420 each have an operating switch. It has a base portion 7401 equipped with a component 7403, and a light-emitting portion supported by the base portion 7401.

[0500] Here, we have provided an example of a lighting device in which the light-emitting part is supported by a base, but the light-emitting part The enclosure equipped with this feature can also be fixed to the ceiling or suspended from the ceiling. Because the light surface can be curved, the light-emitting surface can be curved into a concave shape to illuminate a specific area. It can illuminate a specific area, or the light-emitting surface can be curved into a convex shape to brightly illuminate the entire room.

[0501] Figures 27(A1), (A2), (B) to (I) show a flexible display unit 7001. An example of a portable information terminal is shown.

[0502] The display unit 7001 is a functional panel, display panel, light-emitting panel, and sensor panel according to one embodiment of the present invention. It is manufactured using a panel, touch panel, display device, or input / output device, etc. For example, curvature A display device or input / output device that can be bent to a radius of 0.01 mm or more and 150 mm or less. The following can be applied. Furthermore, the display unit 7001 may be equipped with a touch sensor, allowing for display via finger, etc. The portable information terminal can be operated by touching part 7001. According to one aspect of the present invention This enables the provision of highly reliable electronic equipment equipped with a flexible display unit.

[0503] Figure 27(A1) is a perspective view showing an example of a portable information terminal, and Figure 27(A2) is a mobile This is a side view showing an example of an information terminal. The portable information terminal 7500 consists of a housing 7501 and a display unit 7 It includes 001, a drawer member 7502, an operation button 7503, etc.

[0504] The portable information terminal 7500 has a flexible display unit wound in a roll inside the housing 7501. It has 7001.

[0505] Furthermore, the 7500 portable information terminal is capable of receiving video signals via its built-in control unit, and it can receive The generated video can be displayed on the display unit 7001. In addition, the portable information terminal 7500 has It has a built-in battery. Furthermore, the 7501 housing has a terminal section for connecting a connector, and the display... The system may also be configured to supply image signals and power directly from an external source via wired connections.

[0506] Additionally, the 7503 control button allows you to turn the power on and off, and switch the displayed image. These can be done. Note that in Figures 27(A1), (A2), and (B), mobile information terminals This example shows the operation button 7503 placed on the side of the 7500, but it is not limited to this, and mobile information It may be placed on the same side as the display surface of the terminal 7500 (the front side) or on the back side.

[0507] Figure 27(B) shows the display unit 7001 pulled out by the pull-out member 7502. This shows the information terminal 7500. In this state, video can be displayed on the display unit 7001. Furthermore, the state in Figure 27(A1) where a part of the display unit 7001 is rolled up and the display unit 700 Figure 27(B) shows the state in which 1 is pulled out by the pull-out member 7502, and the portable information terminal 75 00 may be configured to display different values. For example, when in the state shown in Figure 27(A1), the table By concealing the rolled portion of the display unit 7001, the mobile information terminal 7500 It can reduce power consumption.

[0508] Furthermore, when the display unit 7001 is pulled out, the display surface of the display unit 7001 becomes flat. To secure it, a reinforcing frame may be provided on the side of the display unit 7001.

[0509] In addition to this configuration, a speaker is installed in the enclosure, and the audio signal received along with the video signal is used. It would also be possible to configure it to output audio like that.

[0510] Figures 27(C) to (E) show an example of a foldable portable information terminal. Figure 27(C) Now, in the unfolded state, as shown in Figure 27(D), either the unfolded or folded state... In the transitional state to the other state, Figure 27(E) shows the folded state of the portable information terminal 760. It indicates 0. The 7600 portable information terminal is highly portable when folded, and when unfolded... Therefore, the seamless, wide display area provides excellent overview.

[0511] The display unit 7001 is supported by three housings 7601 connected by hinges 7602. It is. By bending the two housings 7601 via the hinge 7602, portable information The 7600 device can be reversibly transformed from an unfolded state to a folded state.

[0512] Figures 27(F) and (G) show an example of a foldable portable information terminal. Figure 27(F) Now, in the folded state where the display unit 7001 is on the inside, as shown in Figure 27(G), the display unit This shows the 7650 mobile information terminal in a folded state with 7001 on the outside. The terminal 7650 has a display unit 7001 and a non-display unit 7651. When not in use, the display unit 7001 is folded inwards. It can prevent dirt and scratches.

[0513] Figure 27(H) shows an example of a flexible portable information terminal. Portable information terminal 7700 is It has a housing 7701 and a display unit 7001. Furthermore, it has an input means, a button 7703a 7703b, speaker 7704a, 7704b which is an audio output means, external connection port 7 It may also have 705, microphone 7706, etc. Furthermore, the portable information terminal 7700 is flexible A battery 7709 having the following can be installed. The battery 7709 is, for example, a display unit 7 It may be placed on top of 001.

[0514] The housing 7701, the display unit 7001, and the battery 7709 are flexible. Therefore, To curve the personal digital assistant 7700 into a desired shape, or to twist the personal digital assistant 7700 It is easy to add. For example, the portable information terminal 7700 has a display unit 7001 on the inside or It can be folded outwards for use. Alternatively, the mobile information terminal 7700 can be used It can also be used in a rolled-up state. In this way, the housing 7701 and the display unit 700 Because it is possible to freely deform 1, the mobile information terminal 7700, if dropped, It has the advantage of being less prone to damage even when unintended external forces are applied.

[0515] Furthermore, because the 7700 portable information terminal is lightweight, the top of the 7701 casing can be held with a clip or similar. It can be used by holding it and hanging it, or by fixing the 7701 enclosure to a wall with magnets or the like. It can be used conveniently in a variety of situations.

[0516] Figure 27(I) shows an example of a wristwatch-type personal information terminal. The personal information terminal 7800 is a van. It has a dome 7801, a display unit 7001, input / output terminals 7802, operation buttons 7803, etc. The 7801 has the function of a housing. The portable information terminal 7800 has flexibility. The battery 7805 can be installed. The battery 7805 is, for example, installed in the display unit 70 It can also be placed in conjunction with 01 or Band 7801.

[0517] The band 7801, the display unit 7001, and the battery 7805 are flexible. Furthermore, the 7800 portable information terminal can be easily bent into a desired shape.

[0518] The 7803 control button is used for time setting, power on / off, wireless communication on, and more. Various functions such as operation, activation and deactivation of silent mode, and activation and deactivation of power saving mode. It can be made to hold it. For example, the operating system built into the personal digital assistant 7800 The system also allows you to freely configure the function of the control button 7803.

[0519] Furthermore, by touching the icon 7804 displayed on the display unit 7001 with your finger, etc., the application You can start the application.

[0520] Furthermore, the 7800 portable information terminal can perform short-range wireless communication compliant with communication standards. It is possible. For example, by communicating with a wireless headset, hands-free communication is possible. You can also make calls using Lee.

[0521] Furthermore, the personal information terminal 7800 may also have an input / output terminal 7802. If 802 is present, data can be exchanged directly with other information terminals via a connector. This is possible. Furthermore, charging can also be performed via the input / output terminal 7802. Note that this implementation... The charging operation of the portable information terminal exemplified by its form is performed by contactless power transmission without using input / output terminals. You may go.

[0522] Figures 28(A), (B), and (C) show examples of foldable wristwatch-type personal information terminals. The personal digital assistant 7900 consists of a display unit 7901, a housing 7902, a housing 7903, and a band 79 04, It has operation buttons 7905, etc.

[0523] As shown in Figure 28(A), the portable information terminal 7900 has a housing 7902 on top of the housing 7903. From the stacked state, by lifting the housing 7902 as shown in Figure 28(B), As shown in Figure 28(C), the display unit 7901 is reversibly deformed into an unfolded state. This is possible. For this reason, the portable information terminal 7900 can, for example, normally fold the display unit 7901. It can be used in this state, and the display area can be expanded by unfolding the display unit 7901. It can be used.

[0524] Furthermore, since the display unit 7901 also functions as a touch panel, the display unit 7901 The 7900 personal digital assistant can be operated by touching it. Additionally, the 7905 operation button... By pushing, rotating, or sliding in the up / down, forward, or backward directions, It is possible to operate the 7900 personal digital assistant (PDCA).

[0525] As shown in Figure 28(A), when housing 7902 and housing 7903 are stacked on top of each other, It is preferable that the body 7902 and the housing 7903 have a locking mechanism to prevent them from separating unintentionally. At this time, the lock state can be released by performing an operation such as pressing operation button 7905. It is preferable to have a configuration that allows this. Furthermore, it is preferable to use the restoring force of a spring or the like to release the locked state. When divided, it automatically transforms from the state shown in Figure 28(A) to the state shown in Figure 28(C). It may have a mechanism. Alternatively, a magnet may be used instead of a locking mechanism, and the housing 7902 and the housing The relative position of 7903 may be fixed. By using magnets, the housing 7902 and the casing can be easily fixed. Body 7903 can be attached and detached.

[0526] In Figures 28(A), (B), and (C), the direction of bending of band 7904 is approximately perpendicular to the direction of bending. The configuration shown allows the display unit 7901 to be deployed in the direction shown in Figures 28(D) and (E). The configuration allows the display unit 7901 to be deployed in a direction roughly parallel to the bending direction of the band 7904. It is also possible to curve the display unit 7901 so that it wraps around the band 7904. It may be used in combination.

[0527] The electronic device described in this embodiment has a display unit for displaying some kind of information. The display unit is characterized by having a display panel, touch panel, or according to one embodiment of the present invention. Display devices such as touch panel modules can be applied.

[0528] This embodiment may be appropriately combined with other embodiments described herein, at least in part. They can be implemented in combination. [Examples]

[0529] The following describes the results of cross-sectional observation of a display device according to one embodiment of the present invention. To clarify, the cross-sectional structure of the display device fabricated in this embodiment can be seen with reference to Figure 9.

[0530] [Manufacturing of display devices] First, transistors and wiring connected to them were formed on a glass substrate. Transistors (transistor 201, transistor 202, transistor 205, etc.) In this case, the bottom gate structure transient uses an oxide semiconductor as the semiconductor in which the channel is formed. A stylus was applied. In this embodiment, the c-axis is arranged perpendicular to the film surface as an oxide semiconductor. A crystalline oxide semiconductor (CAAC-OS: C-Axis Aligned Crystal A stalline-oxyden semiconductor was used.

[0531] CAAC-OS is a crystalline oxide semiconductor in which the c-axis of the crystal is approximately oriented perpendicularly to the film surface. This refers to the fact that oxide semiconductors also have a crystalline structure that is a nanoscale aggregate of microcrystals. The existence of diverse structures different from single crystals, such as nano-crystals (nc), is evident. It has been confirmed. CAAC-OS has lower crystallinity than single crystals, and compared to nc, it has lower crystallinity. It is expensive. CAAC-OS has the characteristic of not having visible grain boundaries, making it stable over large areas. It is possible to form a uniform film, and it also allows for flexibility when the light-emitting device is bent. The CAAC-OS film is less prone to cracking due to force.

[0532] In this example, an In-Ga-Zn oxide was used as the oxide semiconductor material.

[0533] Next, on the insulating layer covering the transistor and wiring, a first electric element that functions as a pixel electrode is placed. An electrode was formed. The first electrode was a laminated structure of a titanium film, an aluminum film, and a titanium film. Next, an insulating layer was formed to cover the end of the first electrode. This insulating layer had a thickness of approximately 2 μm. A photosensitive polyimide of m was used. Subsequently, a structure was formed on the insulating layer. A photosensitive polyimide with a thickness of approximately 1.25 μm was used.

[0534] Next, the EL layer and the second electrode were deposited using a vapor deposition method to form a light-emitting element. Here, the EL layer and the second electrode were formed across the entire display area without using a metal mask. .

[0535] Furthermore, a light-shielding layer was formed on a different glass substrate than the one described above. The light-shielding layer had a thickness of approximately 0 A 0.6 μm black matrix was used. Next, a red colored layer (R) and a green colored layer ( G) and a blue colored layer (B) were formed. The thickness of each was approximately 2 The thickness of the base layer was 0.0 μm, the colored layer (G) was approximately 1.5 μm, and the colored layer (B) was approximately 1.5 μm.

[0536] Next, the two glass substrates were bonded together with adhesive, and the adhesive was allowed to harden. The color layer was formed on the substrate side by screen printing. The adhesive used was thermosetting epoxy. Kishi was used. The substrates were bonded together under reduced pressure.

[0537] In this embodiment, the display device is made to display white across the entire display area, and the display surface is Observations were made visually from vertical and oblique directions. As a result, even when viewed from an oblique direction, It was confirmed that the changes in chromaticity and luminance were extremely small.

[0538] [Cross-sectional observation results] The fabricated display device was processed by ion milling, and its cross-section was examined using a scanning electron microscope (S Observations were made using an EM (Scanning Electron Microscope).

[0539] The observed cross-sectional images are shown in Figures 29(A) and (B). Figures 29(A) and (B) show the same cross-sectional image. Yes, Figure 29(B) is a diagram showing the outlines of each layer in Figure 29(A) with dashed lines for clarity. That is the case.

[0540] Note that in Figures 29(A) and (B), a cavity can be seen in part of the EL layer; this is a cross-section. These were formed during processing for observation purposes.

[0541] Figures 29(A) and (B) show two structures. The structure on the left has a colored layer (R) and The structure on the right is located between colored layers (B) and between colored layers (R) and (G). Furthermore, each structure has a portion located higher than the lower surface of the colored layer (R). It was confirmed that this could be done.

[0542] The fabricated display device has a distance (high) between the first electrode and the colored layer (R) at the opening of the insulating layer. It was confirmed that there is a region where the difference in thickness is approximately 1.0 μm. Furthermore, at the opening of the insulating layer It was confirmed that there is a region where the distance between the second electrode and the colored layer (R) is approximately 0.7 μm. It is. Also, in the opening of the insulating layer, the distance between the first electrode and the light-shielding layer is approximately 2.8 μm. It was confirmed that it has a region. Also, the distance between the second electrode and the light-shielding layer at the opening of the insulating layer. It was confirmed that the region has a width of approximately 2.5 μm.

[0543] Furthermore, it has been confirmed that the display device has a region where the distance between the structure and the light-shielding layer is approximately 1.5 μm. It was confirmed that the distance between the second electrode and the light-shielding layer on the structure is approximately 1.2 μm. This was confirmed.

[0544] Furthermore, the structure has a taper angle (the angle between the bottom and side surfaces of the structure) in the range of approximately 45 to 70 degrees. It had a forward taper shape. Also, a portion of the EL layer covering the structure was the thickness of the EL layer on the first electrode. It was confirmed that the structure was even thinner than the surrounding area.

[0545] From the above, it can be seen that the display device manufactured in this embodiment has an extremely small distance between the pair of substrates. This was confirmed. Furthermore, visual observation confirmed that the field of view characteristics had been improved. .

[0546] The above is a description of this embodiment. [Explanation of symbols]

[0547] 10 Display device 11 Structure 11a part 12 Structure 21 circuit boards 23 Conductive layer 24 EL layer 24a EL layer 24b EL layer 25 Conductive layer 31 circuit boards 32 Display section 34 circuits 35 Wiring 39 Adhesive layer 40 light-emitting elements 42 FPC 43 IC 51a Colored layer 51b Colored layer 51c colored layer 52 Light blocking layer 60 Click the LCD button 61. Conductive layer 62 LCD 63 Conductive layer 64 Insulating layer 65 Insulating layer 70 transistors 71 Conductive layer 72 Semiconductor layer 73 Insulating layer 74a Conductive layer 74b Conductive layer 81 Insulating layer 81a Insulating layer 81b Insulating layer 81c insulating layer 82 Insulating layer 82a part 90 transistors 91 Single crystal substrate 95a Connecting Layer 95b Connectivity Layer 96 Conductive layer 100 Touch Panels 111 Conductive layer 112 EL layer 113 Conductive layer 130 Polarizing plate 131 Colored layer 131a Colored layer 131b Colored layer 132 Light blocking layer 133 Light blocking layer 134 Colored layer 141 Adhesive layer 142 Adhesive layer 146 Conductive film 147 Conductive film 148 Conductive film 149 nanowires 150 Input Devices 151 Electrode 152 Electrode 153 Bridge electrode 155 Wiring 156 Wiring 157 FPC 158 IC 160 circuit boards 161 Insulating layer 162 Insulating layer 163 Insulating layer 164 Insulating layer 165 Adhesive layer 168 IC 169 Connection part 170 circuit boards 171 circuit boards 172 Adhesive layer 173 Insulating layer 181 circuit boards 182 Adhesive layer 183 Insulating layer 191 Conductive layer 192 Conductive layer 193 LCD 194 Conductive layer 195 Insulating layer 200 Display device 201 Transistors 202 transistors 203 Capacitive element 204 Terminal section 205 transistors 206 transistors 207 Terminal section 210 pixels 211 Insulating layer 212 Insulating layer 213 Insulating layer 214 Insulating layer 215 Insulating layer 216 Insulating layer 220 Insulating layer 221 Conductive layer 222 Conductive layer 223 Conductive layer 224 Conductive layer 231 Semiconductor layer 242 Connecting Layers 243 Connectors 251 Aperture 252 Connection part 601 Pulse voltage output circuit 602 Current detection circuit 603 capacity 621 Electrode 622 Electrode 705 Insulating layer 706 Electrode 707 Insulating layer 708 Semiconductor layer 710 Insulating layer 711 Insulating layer 714 Electrode 715 Electrode 722 Insulating layer 723 Electrode 726 Insulating layer 727 Insulating layer 728 Insulating layer 729 Insulating layer 741 Insulating layer 742 Semiconductor layer 744a electrode 744b electrode 746 Electrode 755 Impurities 771 circuit board 772 Insulating layer 810 transistors 811 Transistors 820 transistors 821 Transistors 825 Transistors 826 transistors 830 transistors 831 Transistors 840 transistors 841 Transistors 842 transistors 843 Transistors 844 transistors 845 transistors 846 transistors 847 transistors 5000 cabinets 5001 Display section 5002 Display section 5003 Speaker 5004 LED Lamp 5005 Operation Keys 5006 Connection terminal 5007 Sensor 5008 Microphone 5009 Switch 5010 Infrared Port 5011 Recording medium reading unit 5012 Stand 5013 Remote Control Unit 5014 Antenna 5015 Shutter button 5016 Image receiving unit 5017 charger 5018 Band 5019 Clasp 5020 Icons 5021 Icons 7000 Display 7001 Display section 7100 Mobile Phone 7101 enclosure 7103 Operation Buttons 7104 External connection port 7105 Speaker 7106 Microphone 7200 Television equipment 7201 enclosure 7203 Stand 7211 Remote Control Unit 7300 Mobile Information Terminal 7301 enclosure 7302 Operation Buttons 7303 Information 7304 Information 7305 Information 7306 Information 7310 Mobile Information Terminal 7320 Mobile Information Terminal 7400 Lighting device 7401 Daibu 7402 Light-emitting part 7403 Operation switch 7410 Lighting device 7412 Light-emitting part 7420 Lighting device 7422 Light-emitting part 7500 Mobile Information Terminals 7501 enclosure 7502 component 7503 Operation Buttons 7600 Mobile Information Terminal 7601 enclosure 7602 Hinge 7650 Mobile Information Terminal 7651 Hidden part 7700 Mobile Information Terminal 7701 enclosure 7703a button 7703b button 7704a speaker 7704b speaker 7705 External connection port 7706 Mike 7709 Battery 7800 Mobile Information Terminal 7801 Band 7802 Input / output terminal 7803 Operation Buttons 7804 Icon 7805 Battery 7900 Mobile Information Terminal 7901 Display section 7902 enclosure 7903 cabinet 7904 Band 7905 Operation Buttons 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

1. The display unit has multiple pixels, multiple first structures, and multiple second structures. Of the plurality of pixels, at least the first pixel and the second pixel each have a transistor and a liquid crystal element to which the transistor and the pixel electrode are electrically connected. In a plan view of the display unit, the first pixel and the second pixel are arranged adjacent to each other in the first direction. In a plan view of the display unit, each of the plurality of first structures has a shape that extends in the first direction. In a plan view of the display unit, each of the plurality of second structures has a shape that extends in a second direction intersecting the first direction. In a plan view of the display unit, the plurality of first structures are arranged with space between them. In a plan view of the display unit, the plurality of second structures are arranged with space between them. In a plan view of the display unit, the first conductive layer having the function of a pixel electrode has a shape extending in the first direction. In a plan view of the display unit, the width of any one of the plurality of first structures in the first direction is longer than the width of the first conductive layer in the second direction. In a plan view of the display unit, the width of any one of the plurality of second structures in the second direction is longer than the width of the first conductive layer in the second direction. In a plan view of the display unit, any one of the plurality of second structures has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel. A liquid crystal display device wherein any one of the plurality of first structures or any one of the plurality of second structures overlaps with a semiconductor layer that includes a channel formation region of the transistor having the first pixel.

2. The display unit has multiple pixels, multiple first structures, and multiple second structures. Of the plurality of pixels, at least the first pixel and the second pixel each have a transistor and a liquid crystal element to which the transistor and the pixel electrode are electrically connected. In a plan view of the display unit, the first pixel and the second pixel are arranged adjacent to each other in the first direction. In a plan view of the display unit, each of the plurality of first structures has a shape that extends in the first direction. In a plan view of the display unit, each of the plurality of second structures has a shape that extends in a second direction intersecting the first direction. In a plan view of the display unit, the plurality of first structures are arranged with space between them. In a plan view of the display unit, the plurality of second structures are arranged with space between them. In a plan view of the display unit, the first conductive layer having the function of a pixel electrode has a shape extending in the first direction. In a plan view of the display unit, the width of any one of the plurality of first structures in the first direction is longer than the width of the first conductive layer in the second direction. In a plan view of the display unit, the width of any one of the plurality of second structures in the second direction is longer than the width of the first conductive layer in the second direction. In a plan view of the display unit, any one of the plurality of second structures has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel. Any one of the plurality of first structures or any one of the plurality of second structures overlaps with a semiconductor layer that includes the channel formation region of the transistor having the first pixel. A liquid crystal display device in which the plurality of first structures and the plurality of second structures have regions disposed above a second conductive layer that functions as a common electrode for the liquid crystal elements.

3. The display unit has multiple pixels, multiple first structures, and multiple second structures. Of the plurality of pixels, at least the first pixel and the second pixel each have a transistor and a liquid crystal element to which the transistor and the pixel electrode are electrically connected. In a plan view of the display unit, the first pixel and the second pixel are arranged adjacent to each other in the first direction. In a plan view of the display unit, each of the plurality of first structures has a shape that extends in the first direction. In a plan view of the display unit, each of the plurality of second structures has a shape that extends in a second direction intersecting the first direction. In a plan view of the display unit, the plurality of first structures are arranged with space between them. In a plan view of the display unit, the plurality of second structures are arranged with space between them. In a plan view of the display unit, the first conductive layer having the function of a pixel electrode has a shape extending in the first direction. In a plan view of the display unit, the width of any one of the plurality of first structures in the first direction is longer than the width of the first conductive layer in the second direction. In a plan view of the display unit, the width of any one of the plurality of second structures in the second direction is longer than the width of the first conductive layer in the second direction. In a plan view of the display unit, any one of the plurality of second structures has a region disposed between the first conductive layer of the first pixel and the first conductive layer of the second pixel. A liquid crystal display device wherein any one of the plurality of first structures or any one of the plurality of second structures overlaps with a semiconductor layer including a channel formation region of the transistor having the first pixel, via a second conductive layer that functions as a common electrode of the liquid crystal element.

Images